Multifunctional reconfigurable reflectarray structure and control circuit comprising multifunctional reconfigurable reflectarray structure

Abstract

A multi-function reconfigurable reflectarray structure and a control circuit comprising the same are provided. A multifunctional reconfigurable reflectarray structure 100 includes an emitting layer and a DC bias layer, in which the emitting layer 200 includes first and second metal members 210, 220 and first and second diodes 230, 240. The first diode is connected between the first metal member and the second metal member, and the second diode is coupled to the second metal member. In the DC bias layer 600, a first voltage input 621 is connected to the first diode, and a second voltage input 631 is connected to the second diode. A first working state of the first diode and a second working state of the second diode are controlled by first and second input signals, and the emitting layer is modulated according to the first and second working states to form or absorb either a single beam reflection or a double beam reflection after the electromagnetic wave is incident on the emitting layer.

Description

[Technical field]

[0001] The present disclosure relates to Reconfigurable Intelligent Surface (RIS) technology, and in particular to a multi-function reconfigurable reflectarray structure and a control circuit comprising the multi-function reconfigurable reflectarray structure. [Background technology]

[0002] With the advent of 6G mobile communications, more and more spectrum resources are being used in the millimeter wave frequency band to improve transmission efficiency and system throughput and improve the transmission quality of communication networks, but the signals in this frequency band suffer from path loss in the communication environment and are susceptible to environmental influences, causing communication dead zones and blocking communication with users. Until now, there has been massive MIMO technology to increase the throughput of wireless communication systems, but as a form of increasing efficiency, deploying base stations in succession to increase coverage has problems such as mutual interference between base stations and high hardware costs, which may reduce the deployment efficiency of the entire network.

[0003] As can be seen, the current market does not yet have a multi-function reconfigurable reflectarray structure that is low-cost, has low power consumption, and can be installed in any communication environment, and a control circuit equipped with the multi-function reconfigurable reflectarray structure, so related parties are searching for a solution. Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, the objective of the present disclosure is to provide a multi-function reconfigurable reflectarray structure and a control circuit equipped with the multi-function reconfigurable reflectarray structure, which modulates the reflection phase of the emitting layer by changing the working state of the diode, and the electromagnetic wave in the space will have different propagation behaviors after entering the emitting layer, and the behaviors include the functions of reflection, absorption, focusing, and polarization conversion. As a result, in a wireless communication environment that is originally difficult to control, by simply dynamically controlling the input signal, the stability, accuracy, and even the security of communication privacy of the message transmission in the wireless communication environment can be ensured, and many degrees of freedom are added to the signal transmission. [Means for solving the problem]

[0005] According to an embodiment of the present disclosure, there is provided a multifunctional reconfigurable reflectarray structure including: a first metallic member; a second metallic member arranged symmetrically with the first metallic member; a first diode connected between the first metallic member and the second metallic member; and a second diode coupled to the second metallic member; an emitting layer for receiving electromagnetic waves from an electromagnetic wave source; and a DC bias layer including a first voltage input terminal electrically connected to the first diode and providing a first input signal; and a second voltage input terminal electrically connected to the second diode and providing a second input signal, wherein a first operating state of the first diode and a second operating state of the second diode are controlled by the first input signal and the second input signal, respectively, and the emitting layer is modulated according to the first operating state and the second operating state, so that the electromagnetic waves form either a single beam reflection or a double beam reflection after being incident on the emitting layer, or are absorbed by the emitting layer.

[0006] Another example of the above embodiment is as follows, in which the emissive layer is operated in either a reflective mode or an absorbing mode according to a first operating state and a second operating state; when the emissive layer is operated in the reflective mode in which the emissive layer is in a first reflective phase state, the first input signal and the second input signal are both 0, so that the first operating state and the second operating state are both in an off state; when the emissive layer is operated in the reflective mode in which the emissive layer is in a second reflective phase state, the first input signal is 1, so that the first operating state is in an on state, and the second input signal is 0, so that the second operating state is in an off state; when the emissive layer is operated in the absorbing mode, the first input signal and the second input signal are both 1, so that the first operating state and the second operating state are both in an on state.

[0007] Another example of the above embodiment is as follows: there is an incident distance between the electromagnetic wave source and the emitting layer, the electromagnetic wave is incident on the emitting layer at an incident angle and then reflected at a reflection angle, in the reflection mode, the reflection phase difference between the first reflection phase state and the second reflection phase state is 180°, and after the electromagnetic wave is incident on the emitting layer, it is determined to form either single beam reflection or double beam reflection according to the incident distance, the incident angle, the reflection angle and the number of reflection angles.

[0008] Another example of the above embodiment is as follows, in which the first metal member and the second metal member are both rectangular. The short side of the first metal member has a first feed point electrically connected to a first voltage input terminal through two first conductive through holes. The long side of the second metal member has a second feed point coupled to a second diode and electrically connected to a second voltage input terminal through two second conductive through holes.

[0009] Another example of the above embodiment is as follows, wherein the second metal member includes a first short side aligned with one short side of the first metal member and a second short side aligned with the other short side of the first metal member, and the distance between the second feed point and the first short side is greater than the distance between the second feed point and the second short side.

[0010] Another example of the above embodiment is as follows, in which the above emitting layer further includes an absorbing resistor connected between the second metal member and the second diode, and absorbing electromagnetic waves when both the first operating state and the second operating state are in an on state.

[0011] Another example of the above embodiment is as follows, in which the above multifunctional reconfigurable reflectarray structure includes a medium layer having an upper surface connected to a radiation layer, a first ground layer having an upper surface connected to a lower surface of the medium layer, a radio frequency suppression layer having an upper surface connected to the lower surface of the first ground layer, and a second ground layer having an upper surface connected to the lower surface of the radio frequency suppression layer and a lower surface connected to a DC bias layer.

[0012] Another example of the above embodiment is as follows, in which the radio frequency suppression layer includes two substrates stacked on top of each other, and two fan-shaped radio frequency choke units disposed between the two substrates and used to suppress the high frequency signal of the radiation layer from flowing into the DC bias layer.

[0013] Another example of the above embodiment is as follows, in which the total thickness of the emissive layer and the medium layer is equal to the thickness of the DC bias layer.

[0014] Another example of the above embodiment is as follows, in which the first diode and the second diode are both phase shift switch (P-Intrinsic-N; PIN) diodes.

[0015] According to another embodiment of the present disclosure, there is provided a multifunctional reconfigurable reflectarray structure including: an emission layer used for receiving electromagnetic waves from an electromagnetic wave source, the emission layer including a first metal member, a second metal member provided symmetrically with the first metal member, a first diode connected between the first metal member and the second metal member, and a second diode coupled to the second metal member; and a DC bias layer including a first voltage input terminal electrically connected to the first diode and a second voltage input terminal electrically connected to the second diode; and a control module connected to the first voltage input terminal and the second voltage input terminal to provide an input signal and a second input signal, wherein a first working state of the first diode and a second working state of the second diode are controlled by the first input signal and the second input signal, respectively, and the emitting layer is modulated according to the first working state and the second working state to form either a single beam reflection or a double beam reflection after the electromagnetic wave is incident on the emitting layer, or is absorbed by the emitting layer.

[0016] Another example of the above embodiment is as follows, the control module includes a controller, a shift register connected to the controller, a bipolar junction transistor (BJT) having a base terminal connected to the shift register and an emitter terminal connected to a first voltage input terminal and a second voltage input terminal, and a power supply device connected to a collector terminal of the bipolar transistor, the controller controls the shift register to generate a first input signal and a second input signal.

[0017] Another example of the above embodiment is as follows, in which the emissive layer is operated in either a reflective mode or an absorbing mode according to a first operating state and a second operating state. When the emissive layer is operated in a reflective mode with a first reflective phase state, the first input signal and the second input signal are both 0, so that the first operating state and the second operating state are both in an OFF state. When the emissive layer is operated in a reflective mode with a second reflective phase state, the first input signal is 1, so that the first operating state is in an ON state, and the second input signal is 0, so that the second operating state is in an OFF state. When the emissive layer is operated in an absorbing mode, the first input signal and the second input signal are both 1, so that the first operating state and the second operating state are both in an ON state.

[0018] Another example of the above embodiment is as follows: there is an incident distance between the electromagnetic wave source and the emitting layer, the electromagnetic wave is reflected at a reflection angle after being incident on the emitting layer at a certain incident angle, in the reflection mode, the reflection phase difference between the first reflection phase state and the second reflection phase state is 180°, and after the electromagnetic wave is incident on the emitting layer, it determines whether to form a single beam reflection or a double beam reflection according to the incident distance, the incident angle, the reflection angle and the number of the reflection angles.

[0019] Another example of the above embodiment is as follows, in which the first metal member and the second metal member are both rectangular, and the short side of the first metal member has a first feed point electrically connected to a first voltage input terminal via two first conductive through holes, while the long side of the second metal member has a second feed point coupled to a second diode and electrically connected to a second voltage input terminal via two second conductive through holes.

[0020] Another example of the above embodiment is as follows, wherein the second metal member includes a first short side that aligns with one short side of the first metal member and a second short side that aligns with the other short side of the first metal member, and the distance between the second feed point and the first short side is greater than the distance between the second feed point and the second short side.

[0021] Another example of the above embodiment is as follows, in which the above emitting layer further includes an absorbing resistor connected between the second metal member and the second diode, and when both the first operating state and the second operating state are in the on state, the absorbing resistor absorbs electromagnetic waves.

[0022] Another example of the above embodiment is as follows, in which the above multifunctional reconfigurable reflectarray structure includes a medium layer having an upper surface connected to a radiation layer, a first ground layer having an upper surface connected to a lower surface of the medium layer, a radio frequency suppression layer having an upper surface connected to the lower surface of the first ground layer, and a second ground layer having an upper surface connected to the lower surface of the radio frequency suppression layer and a lower surface connected to a DC bias layer.

[0023] Another example of the above embodiment is as follows, in which the radio frequency suppression layer includes two substrates stacked on top of each other, and two radio frequency choke units, both of which are fan-shaped, disposed between the two substrates and used to suppress the high frequency signal of the radiation layer from flowing into the DC bias layer.

[0024] Another example of the above embodiment is as follows, in which the total thickness of the emissive layer and the medium layer is equal to the thickness of the DC bias layer. [Brief description of the drawings]

[0025] [Figure 1] FIG. 1 is a schematic perspective view showing a reconfigurable smart panel according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a perspective schematic diagram showing a multi-function reconfigurable reflectarray structure of the reconfigurable smart panel of FIG. 1. [Diagram 3] FIG. 3 is an exploded schematic diagram showing the multi-function reconfigurable reflectarray structure of FIG. 2. [Figure 4] FIG. 3 is a top schematic diagram showing the multifunctional reconfigurable reflectarray structure of FIG. 2. [Figure 5A]FIG. 3 is a simulation schematic diagram showing a reflection phase when the emitting layer of the multifunctional reconfigurable reflectarray structure of FIG. 2 is operated in a reflection mode. [Figure 5B] FIG. 3 is a simulation schematic diagram showing the reflection coefficient when the emissive layer of the multifunctional reconfigurable reflectarray structure of FIG. 2 is operated in a reflection mode. [Figure 5C] FIG. 3 is a simulation schematic diagram showing the reflection coefficient when the emissive layer of the multifunctional reconfigurable reflectarray structure of FIG. 2 is operated in an absorption mode. [Figure 6] FIG. 3 is a measurement schematic diagram showing the reflection coefficients corresponding to different feed points of the multi-function reconfigurable reflectarray structure of FIG. 2. [Figure 7] 3 is a measurement schematic diagram showing reflection coefficients corresponding to different resistance values ​​of the multifunctional reconfigurable reflectarray structure of FIG. 2; FIG. [Figure 8A] FIG. 2 is a simulation-measurement comparison diagram of the radiation field type that forms a single beam reflection after the emitting layer of the multifunctional reconfigurable reflectarray structure of FIG. 1 receives electromagnetic waves. [Figure 8B] FIG. 2 is a schematic diagram showing a dualized phase distribution corresponding to a single beam reflection by the reconfigurable smart panel of FIG. 1; [Figure 9A] FIG. 2 is a simulation-measurement comparison diagram of the radiation field type that forms double beam reflection after the emitting layer of the multifunctional reconfigurable reflectarray structure of FIG. 1 receives electromagnetic waves. [Figure 9B] FIG. 2 is a schematic diagram showing a dualized phase distribution corresponding to dual beam reflection by the reconfigurable smart panel of FIG. 1; [Figure 10] FIG. 13 is a schematic diagram showing a control circuit with a multi-function reconfigurable reflectarray structure according to a second embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] In the following, several embodiments of the present invention are disclosed in the drawings, and in order to clearly explain them, numerous practical details are described in the following description. However, those skilled in the art should understand that in other embodiments of the present invention, these practical details are not required, and are not intended to limit the present invention. In addition, in order to simplify the drawings, certain conventional structures and elements are simply and diagrammatically shown in the drawings, and overlapping elements may be indicated by the same reference numerals.

[0027] In addition, in the present specification, an element (or a unit or a module, etc.) being "connected / coupled" to another element may refer to the element being directly connected / coupled to the other element, or may refer to the element being indirectly connected / coupled to the other element, i.e., other elements are interposed between the element and the other element. Only when it is clearly indicated that an element is "directly connected / coupled" to the other element, it indicates that no other elements are interposed between the element and the other element. The terms "first", "second", "third", etc. are merely used to describe different elements, and do not limit the elements themselves, so that the first element can be changed to the second element. Furthermore, the combinations of elements / units / circuits in the present specification are not ordinary or conventional combinations generally known in this field, and it is not possible to determine whether the combination relationship can be easily completed by a person skilled in the art depending on whether the elements / units / circuits themselves are conventional.

[0028] Please refer to Figures 1, 2, 3 and 4 together. Figure 1 is a perspective schematic view showing a reconfigurable smart panel 10 according to a first embodiment of the present disclosure, Figure 2 is a perspective schematic view showing a multi-function reconfigurable reflect array (RRA) structure 100 of the reconfigurable smart panel 10 of Figure 1, and Figure 3 is an exploded schematic view showing the multi-function reconfigurable reflect array structure 100 of Figure 2. Figure 4 is a top schematic view showing the multi-function reconfigurable reflect array structure 100 of Figure 2. As shown in Figures 1 to 4, the reconfigurable smart panel 10 is composed of a plurality of multi-function reconfigurable reflect array structures 100 and can be applied to Frequency Range 1 (FR1) in the 5G NR frequency band. The multi-functional reconfigurable reflectarray structure 100 is a laminated structure, and includes a radiation layer 200, a medium layer 300, a first ground layer 410, a radio frequency suppression layer 500, a second ground layer 420 and a DC bias layer 600, which are sequentially laminated.

[0029] The upper surface of the medium layer 300 is connected to the lower surface of the emitting layer 200. The upper surface of the first ground layer 410 is connected to the lower surface of the medium layer 300. The upper surface of the radio frequency suppression layer 500 is connected to the lower surface of the first ground layer 410. The upper surface of the second ground layer 420 is connected to the lower surface of the radio frequency suppression layer 500, and the lower surface of the second ground layer 420 is connected to the upper surface of the DC bias layer 600.

[0030] The radiation layer 200 is for receiving an electromagnetic wave W radiated from an electromagnetic wave source S (e.g., a horn antenna). The radiation layer 200 includes a first metal member 210, a second metal member 220, a first diode 230, and a second diode 240. The second metal member 220 is provided symmetrically with the first metal member 210 and is a metallic patch. The first diode 230 is connected between the first metal member 210 and the second metal member 220. The second diode 240 is coupled to the second metal member 220.

[0031] The medium layer 300 may be, but is not limited to, a Rogers RO4003C high frequency board or other medium material substrate, and its dielectric constant can be determined according to actual needs. The first ground layer 410 and the second ground layer 420 are both metal substrates and are used to provide grounding. The radio frequency suppression layer 500 includes two substrates 510 and two radio frequency choke units 520. The two substrates 510 are stacked together and may be, but are not limited to, a glass fiber substrate (FR4). The two radio frequency choke units 520 are both radio frequency chokes and are disposed between the two substrates 510. The radio frequency choke units 520 are fan-shaped and are used to suppress / block the high frequency signal or AC voltage generated in the radiation layer 200 from entering the DC bias layer 600 having a low frequency signal or DC voltage.

[0032] The DC bias layer 600 may include a substrate 610, a first metal wiring 620, and a second metal wiring 630. The substrate 610 may be, but is not limited to, a fiberglass substrate (FR4). The first metal wiring 620 and the second metal wiring 630 are both provided on the substrate 610. The first metal wiring 620 includes a first voltage input terminal 621, and the second metal wiring 630 includes a second voltage input terminal 631. The first voltage input terminal 621 is electrically connected to the first diode 230 and provides a first input signal V1 to the first diode 230. The second voltage input terminal 631 is electrically connected to the second diode 240 and provides a second input signal V2 to the second diode 240.

[0033] Specifically, the multifunctional reconfigurable reflectarray structure 100 includes two first conductive through holes Va1, two second conductive through holes Va2, and a third conductive through hole Va3. The radiation layer 200 may further include an absorption resistor 250. The absorption resistor 250 is connected between the second metal member 220 and the second diode 240. One of the two first conductive through holes Va1 and one of the two second conductive through holes Va2 both penetrate the medium layer 300, the first ground layer 410, and one of the substrates 510 of the radio frequency suppression layer 500. The other of the two first conductive through holes Va1 and the other of the two second conductive through holes Va2 both penetrate the other substrate 510 of the radio frequency suppression layer 500, the second ground layer 420, and the DC bias layer 600. The third conductive via Va 3 passes through two substrates 510 , namely, the medium layer 300 , the first ground layer 410 and the radio frequency suppression layer 500 .

[0034] The first metal member 210 and the second metal member 220 are both rectangular. The short side of the first metal member 210 has a first feed point F1. The first feed point F1 can be electrically connected to the first voltage input terminal 621 through two first conductive through holes Va1, so that the anode terminal of the first diode 230 receives the first input signal V1.

[0035] The second metal member 220 can be electrically connected to the second ground layer 420 through the third conductive through hole Va3, and the long side of the second metal member 220 has a second feed point F2. The second feed point F2 is coupled to the second diode 240 (i.e., the second feed point F2 is connected to the absorbing resistor 250, and the absorbing resistor 250 is connected to the second diode 240). The second diode 240 can be electrically connected to the second voltage input terminal 631 through the two second conductive through holes Va2, so that the anode terminal of the second diode 240 receives the second input signal V2. The second feed point F2 can be electrically connected to the second voltage input terminal 631 through the absorbing resistor 250, the second diode 240, and the two second conductive through holes Va2. In addition, the second metal member 220 can include a first short side 221 and a second short side 222. The first short side 221 is aligned with a short side of the first metal member 210 having the first feed point F1. The second short side 222 is aligned with the other short side of the first metal member 210. A distance L1 between the second feed point F2 and the first short side 221 is greater than a distance L2 between the second feed point F2 and the second short side 222.

[0036] The first diode 230 and the second diode 240 may both be phase-shift switch (P-Intrinsic-N; PIN) diodes. The first working state of the first diode 230 and the second working state of the second diode 240 are controlled by a first input signal V1 and a second input signal V2, respectively. The emitting layer 200 is modulated according to the first working state and the second working state, so that the electromagnetic wave W forms either a single beam reflection or a double beam reflection after it enters the emitting layer 200, or is absorbed by the emitting layer 200. Thus, the multifunctional reconfigurable reflectarray structure 100 of the present disclosure uses the first input signal V1 and the second input signal V2 to change the first working state of the first diode 230 and the second working state of the second diode 240, thereby changing the electromagnetic properties of the emitting layer 200, i.e., equivalent to modulating the reflection phase of the emitting layer 200, so that the electromagnetic wave W will have different propagation behaviors after entering the emitting layer 200. In other words, the multifunctional reconfigurable reflectarray structure 100 can switch the emitting layer 200 among three functions, single beam forming, dual beam forming, and absorption, according to the user's needs for the electromagnetic wave W of the 5G NR frequency band. Therefore, the reconfigurable smart panel 10 consisting of a plurality of multifunctional reconfigurable reflectarray structures 100 has the advantages of being simple in structure, low cost, low power consumption, and can be installed in any communication environment.

[0037] In detail, the emissive layer 200 is operated in either a reflective mode or an absorptive mode according to the first operating state of the first diode 230 and the second operating state of the second diode 240, as shown in Table 1 below, which shows the first input signal V1, the second input signal V2, the first operating state and the second operating state corresponding to the reflective mode and the absorptive mode of the emissive layer 200. [Table 1]

[0038] When the emissive layer 200 is operated in a reflective mode with a first reflective phase state (i.e. 0°), the first input signal V1 and the second input signal V2 are both 0, so that the first operating state and the second operating state are both OFF states. When the emissive layer 200 is operated in a reflective mode with a second reflective phase state (i.e. 180°), the first input signal V1 is 1, so that the first operating state is ON state, and the second input signal V2 is 0, so that the second operating state is OFF state. When the emissive layer 200 is operated in an absorptive mode, the first input signal V1 and the second input signal V2 are both 1, so that the first operating state and the second operating state are both ON states.

[0039] In the reflection mode, the reflection phase difference between the first reflection phase state and the second reflection phase state is 180°. The first reflection phase state indicates that the first diode 230 and the second diode 240 are both off, which means that they are responsible for providing a 0° phase when reflecting the electromagnetic wave W. The second reflection phase state indicates that the first diode 230 is on and the second diode 240 is off, which means that they are responsible for providing a 180° phase when reflecting the electromagnetic wave W, so that the first diode 230 is mainly used to control the efficiency of beamforming. In the absorption mode, the first diode 230 and the second diode 240 are both on, and their function is to absorb the electromagnetic wave W and enhance the shielding effect against the electromagnetic wave W. Furthermore, when both the first operating state and the second operating state are in the on state, the absorption resistor 250 can block the induced current flowing through the first metal member 210 and the second metal member 220, and the emitting layer 200 can obtain a large reflection loss in the absorption mode, thereby performing the function of absorbing the electromagnetic wave W.

[0040] Please refer to Figures 5A, 5B and 5C. Figure 5A is a schematic diagram of a simulation of a reflection phase when the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100 of Figure 2 is operated in a reflection mode. Figure 5B is a schematic diagram of a simulation of a reflection coefficient when the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100 of Figure 2 is operated in a reflection mode. Figure 5C is a schematic diagram of a simulation of a reflection coefficient when the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100 of Figure 2 is operated in an absorption mode.

[0041] As shown in FIG. 5A, when the emitting layer 200 is operated in the reflection mode, the phase bandwidth of the multifunctional reconfigurable reflectarray structure 100 can be between 5.78 GHz and 5.90 GHz, and the phase bandwidth is defined by the reflection phase difference between the first reflection phase state and the second reflection phase state phase being equal to 180°±20°. As shown in FIG. 5B, compared with the first reflection phase state, when the emitting layer 200 is operated in the second reflection phase state, it has a large reflection loss within the phase bandwidth, and the reflection coefficient (S11 parameter) is between -1.8 dB and -2.6 dB. As shown in FIG. 5C, in the absorption state, the reflection loss of the emitting layer 200 is 10 dB. It needs to be explained that the equation of the absorptance is: Absorptivity=1-Γ 2 where Absorptivity indicates the absorption rate and Γ indicates the reflection coefficient. According to the above absorption rate formula, when the reflection loss is larger than 10 dB, the absorption rate is larger than 90%, that is, as shown by the dashed line in FIG. 5C, therefore, the multifunctional reconfigurable reflectarray structure 100 has an absorption rate of larger than 90% between frequencies of 5.80 GHz and 6.05 GHz.

[0042] Next, please refer to Figures 6 and 7. Figure 6 is a schematic diagram of the measurement of the reflection coefficient for different feed points of the multifunctional reconfigurable reflectarray structure 100 of Figure 2. Figure 7 is a schematic diagram of the measurement of the reflection coefficient for different resistance values ​​of the multifunctional reconfigurable reflectarray structure 100 of Figure 2. In order to study the effect of the feed position on the multifunctional reconfigurable reflectarray structure 100, the present disclosure introduces the data material of the multifunctional reconfigurable reflectarray structure 100 into a simulation software tool, and uses the simulation software tool to set two feed positions (i.e., the third feed point F3 and the fourth feed point F4, see Figure 4) on the second metal member 220 of the emitting layer 200. The second input signal V2 (i.e., 1) is placed at the positions of the second feed point F2, the third feed point F3 and the fourth feed point F4, respectively, so that the effect of different feed positions on the operation of the emitting layer 200 in the absorption mode can be observed. As shown in Fig. 6, as the feed position moves from the second feed point F2 to the fourth feed point F4, the absorption effect is gradually lower. From the angle of the induced current, when the feed position is the fourth feed point F4, most of the induced current flows to the ground instead of the absorption resistor 250, so the energy cannot be completely absorbed. On the contrary, when the feed position is the second feed point F2, the passing resistance of the surface current is large, so the absorption effect is good. Based on the above considerations, the present disclosure arranges the feed position of the second input signal V2 at the second feed point F2.

[0043] Next, when the second diode 240 is on, in order to make the induced current of the emitting layer 200 flow through the absorbing resistor 250, the resistance value of the absorbing resistor 250 and the resistance value seen at the second feed point F2 need to be the same, and it can be ensured that when the second diode 240 is on, most of the induced current can flow through the absorbing resistor 250. As shown in FIG. 7, the resistance value of the absorbing resistor 250 is selected to be 33Ω, which has an optimal absorption effect. On the other hand, in order to prevent the plate material from warping during the manufacturing process of the multifunctional reconfigurable reflectarray structure 100, the total thickness of the emitting layer 200 and the medium layer 300 is equal to the thickness of the DC bias layer 600, which may be 1.524mm, and the thicknesses of the two substrates 510 of the radio frequency suppression layer 500 are similar to each other, which may be 0.3mm, but the present disclosure is not limited thereto. The following paragraphs will be combined with the drawings to describe in detail the array simulation of forming a single beam reflection and a double beam reflection after the electromagnetic wave W is incident on the emitting layer 200.

[0044] Please refer to Figures 1 to 4, 8A, 8B, 9A and 9B together. Figure 8A is a simulation-measurement comparison diagram of a radiation field type in which the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100 of Figure 1 forms a single beam reflection after receiving an electromagnetic wave W, and Figure 8B is a schematic diagram of a dualized phase distribution for a single beam reflection by the reconfigurable smart panel 10 of Figure 1. Figure 9A is a simulation-measurement comparison diagram of a radiation field type in which the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100 of Figure 1 forms a double beam reflection after receiving an electromagnetic wave W, and Figure 9B is a schematic diagram of a dualized phase distribution for a double beam reflection by the reconfigurable smart panel 10 of Figure 1.

[0045] It is necessary to explain that there may be an incident distance D between the electromagnetic wave source S in Fig. 1 and the emitting layer 200 of the multifunctional reconfigurable reflectarray structure 100. The electromagnetic wave W is reflected at a certain reflection angle after being incident on the emitting layer 200 at a certain incident angle. After the electromagnetic wave W is incident on the emitting layer 200, it determines whether it forms a single beam reflection or a double beam reflection according to the incident distance D, the incident angle, the reflection angle and the number of reflection angles.

[0046] In addition, the present disclosure dualizes the reflection phase of the emitting layer 200 of each multi-function reconfigurable reflectarray structure 100 of the reconfigurable smart panel 10, that is, takes the one-dimensional reconfigurable smart panel 10 as an example. Since the reflection phase can be switched into two states (i.e., reflection phase 0° and reflection phase 180°), it is necessary to perform dualization quantification on the reflection phase of the emitting layer 200, and the following formula can be used:

number

[0047] In Fig. 8A, the incident angle of the electromagnetic wave W may be 15°, the reflection angle may be -15°, and the number of reflection angles may be 1, so that a single beam reflection can be formed after the electromagnetic wave W is incident on the emitting layer 200. At this time, after simulation and measurement of the single beam reflection, the maximum gain is 19.3 dBi, and the dualized phase distribution corresponding to the single beam reflection of the reconfigurable smart panel 10 is shown in Fig. 8B, in which the gray area in the figure indicates that the reflection phase of the emitting layer 200 is classified as a reflection phase of 0° after being dualized, and the white area indicates that the reflection phase of the emitting layer 200 is classified as a reflection phase of 180° after being dualized.

[0048] In Fig. 9A, the incident angle of the electromagnetic wave W may be 0°, the reflection angle may be ±20°, and the number of reflection angles may be 2, so that a double-beam reflection can be formed after the electromagnetic wave W is incident on the emitting layer 200. At this time, after simulation and measurement of the single beam reflection, the maximum gain of the double beam may be between 15.1 dBi and 16.0 dBi, and the dualized phase distribution corresponding to the double beam reflection of the reconfigurable smart panel 10 is shown in Fig. 9B, in which the gray area in the figure indicates that the reflection phase of the emitting layer 200 is classified as a reflection phase of 0° after being dualized, and the white area indicates that the reflection phase of the emitting layer 200 is classified as a reflection phase of 180° after being dualized.

[0049] Please refer to Figure 10. It is a schematic diagram showing a control circuit 700 with a multifunctional reconfigurable reflectarray structure according to a second embodiment of the present disclosure. The control circuit 700 with a multifunctional reconfigurable reflectarray structure includes a plurality of multifunctional reconfigurable reflectarray structures 710 and a control module 720. The multifunctional reconfigurable reflectarray structure 710 of the second embodiment may be the multifunctional reconfigurable reflectarray structure 100 of the first embodiment, and each multifunctional reconfigurable reflectarray structure 710 includes a first diode 711, a second diode 712, a first voltage input end 713 and a second voltage input end 714, the first voltage input end 713 is electrically connected to the first diode 711, and the second voltage input end 714 is electrically connected to the second diode 712, and other structural details are not described separately.

[0050] The control module 720 can control these multifunctional reconfigurable reflectarray structures 710, and is electrically connected to the first voltage input terminal 713 and the second voltage input terminal 714 to provide a first input signal V1 and a second input signal V2, respectively. The first working state of the first diode 711 and the second working state of the second diode 712 are controlled by the first input signal V1 and the second input signal V2, respectively. The emitting layer of the multifunctional reconfigurable reflectarray structure 710 is modulated according to the first working state and the second working state, so that the electromagnetic wave forms either a single beam reflection or a double beam reflection after it is incident on the emitting layer, or is absorbed by the emitting layer.

[0051] In detail, the control module 720 includes a controller 721, at least one shift register 722, at least one bipolar junction transistor (BJT) 723, and one power supply 724. The shift register 722 is electrically connected to the controller 721. The base terminal (B) of the bipolar transistor 723 is electrically connected to the shift register 722, and the emitter terminal (E) of the bipolar transistor 723 is electrically connected to the first voltage input terminal 713 and the second voltage input terminal 714. The power supply 724 is electrically connected to the collector terminal (C) of the bipolar transistor 723. The controller 721 controls the shift register 722 to generate a first input signal V1 and a second input signal V2. The controller 721 may be, but is not limited to, a central processing unit (CPU), an embedded controller (EC), a microprocessor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a system on a chip (SoC), or other arithmetic processing elements and combinations thereof. In the second embodiment, the number of shift registers 722 and the number of bipolar transistors 723 are both plural, and the number of both is arranged according to the number of multifunctional reconfigurable reflectarray structures 710, so the present disclosure does not limit the number of each element. As a result, the control circuit 700 with the multifunctional reconfigurable reflectarray structure of the present disclosure is matched with easily available electronic elements, and modulates the reflection phase of the emitting layer by changing the operating state of the diode, so that the electromagnetic wave in space causes different propagation behavior after entering the emitting layer, and increases the degree of freedom of signal transmission.

[0052] As described above, the present disclosure has the following advantages: 1. For the electromagnetic wave W of the 5G NR frequency band, the radiation layer can be switched among three functions, namely single beamforming, dual beamforming and absorption, according to the needs of the user. 2. The reconfigurable smart panel, which is composed of multiple multi-function reconfigurable reflectarray structures, has the advantages of being simple in structure, low in cost, low in power consumption, and can be installed in any communication environment. 3. The reconfigurable smart panel can be installed on the outer wall of a building, and can use the absorption mode to shield electromagnetic waves, isolate the electromagnetic waves between indoors and outdoors, and prevent third parties from stealing information using the electromagnetic waves transmitted into the room; it can also be installed indoors, and can increase the communication isolation degree of spaces with different indoor environments and reduce electromagnetic interference.

[0053] Although the present disclosure has disclosed the embodiments as described above, the embodiments do not limit the present disclosure, and anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure is based on the contents specified in the following claims. [Explanation of symbols]

[0054] 10: Reconfigurable smart panel 100,710: Multifunctional reconfigurable reflectarray structure 200: Radiation layer 210: First metal member 220: second metal member 221: First short side 222: Second short side 230,711: First diode 240,712: Second diode 250: Absorption resistance 300: Media layer 410: First Ground Layer 420: Second ground layer 500: Radio Frequency Suppression Layer 510,610: Substrate 520: Radio Frequency Choke Unit 600: DC bias layer 620: First metal wiring 621,713: First voltage input terminal 630: second metal wiring 631,714: Second voltage input terminal 700: Control circuit with multi-function reconfigurable reflectarray structure 720: Control module 721: Controller 722: Shift register 723: Bipolar transistor 724: Power supply device D: Incidence distance F1: First feed point F2: Second feed point F3: Third feed point F4: Fourth feed point L1,L2: distance S: Electromagnetic source V1: First input signal V2: The second input signal Va1: First conductive through hole Va2: Second conductive through hole Va3: Third conductive through hole W: Electromagnetic waves θi: Incident angle θr: reflection angle

Claims

1. a radiation layer including a first metal member, a second metal member provided symmetrically to the first metal member, a first diode connected between the first metal member and the second metal member, and a second diode coupled to the second metal member, for receiving electromagnetic waves from an electromagnetic wave source; a DC bias layer including a first voltage input electrically connected to the first diode for providing a first input signal, and a second voltage input electrically connected to the second diode for providing a second input signal; Equipped with a first operating state of the first diode and a second operating state of the second diode are controlled by the first input signal and the second input signal, respectively, and the emitting layer is modulated according to the first operating state and the second operating state, such that the electromagnetic wave forms either a single beam reflection or a double beam reflection after it is incident on the emitting layer, or is absorbed by the emitting layer.

2. the emissive layer is operated in one of a reflective mode and an absorptive mode in response to the first operating state and the second operating state; when the emissive layer is operated in the reflective mode in a first reflective phase state, both the first input signal and the second input signal are zero, such that both the first operational state and the second operational state are off states; when the emissive layer is operated in the reflective mode in a second reflective phase state, the first operational state is an on state because the first input signal is one and the second operational state is an off state because the second input signal is zero; 2. The multifunctional reconfigurable reflectarray structure of claim 1, wherein when the emissive layer is operated in the absorption mode, the first input signal and the second input signal are both 1, such that the first operating state and the second operating state are both the on state.

3. There is an incidence distance between the electromagnetic wave source and the emitting layer, and the electromagnetic wave is incident on the emitting layer at an incidence angle and then reflected at a reflection angle; 3. The multifunctional reconfigurable reflectarray structure of claim 2, wherein in the reflection mode, a reflection phase difference between the first reflection phase state and the second reflection phase state is 180°, and determines whether to form the one of the single beam reflection and the double beam reflection after the electromagnetic wave is incident on the emissive layer according to the incident distance, the incident angle, the reflection angle and the number of the reflection angles.

4. 2. The multifunctional reconfigurable reflectarray structure of claim 1, wherein the first metal member and the second metal member are both rectangular, a short side of the first metal member has a first feed point electrically connected to the first voltage input terminal through two first conductive through holes, while a long side of the second metal member has a second feed point coupled to the second diode and electrically connected to the second voltage input terminal through two second conductive through holes.

5. The second metal member is a first short side aligned with the short side of the first metal member; a second short side aligned with the other short side of the first metal member; Including, The multi-function reconfigurable reflectarray structure of claim 4 , wherein a distance between the second feed point and the first short side is greater than a distance between the second feed point and the second short side.

6. The emissive layer comprises: further comprising an absorption resistor connected between the second metal member and the second diode; The multifunctional reconfigurable reflectarray structure according to claim 1 , wherein when both the first operating state and the second operating state are in an on state, the absorption resistor absorbs the electromagnetic wave.

7. a medium layer having an upper surface connected to the emissive layer; a first ground layer having an upper surface connected to a lower surface of the medium layer; a radio frequency suppression layer having an upper surface connected to a lower surface of the first ground layer; a second ground layer having an upper surface connected to the lower surface of the radio frequency suppression layer and a lower surface connected to the DC bias layer; The multi-function reconfigurable reflectarray structure of claim 1 , further comprising:

8. The radio frequency suppression layer is Two substrates stacked on top of each other; Two radio frequency choke units, each of which is fan-shaped, are disposed between the two substrates and are used to suppress the high frequency signal of the radiation layer from flowing into the DC bias layer; The multi-functional reconfigurable reflectarray structure of claim 7, comprising:

9. The multi-functional reconfigurable reflectarray structure of claim 7 , wherein a total thickness of the emissive layer and the medium layer is equal to a thickness of the DC bias layer.

10. 2. The multi-function reconfigurable reflectarray structure of claim 1, wherein the first diode and the second diode are both Phase-Shift Switch (P-Intrinsic-N; PIN) diodes.

11. a radiation layer including a first metal member, a second metal member provided symmetrically to the first metal member, a first diode connected between the first metal member and the second metal member, and a second diode coupled to the second metal member, for receiving electromagnetic waves from an electromagnetic wave source; a DC bias layer including a first voltage input terminal electrically connected to the first diode and a second voltage input terminal electrically connected to the first diode; A multi-functional reconfigurable reflectarray structure including: a control module coupled to the first voltage input and the second voltage input to provide a first input signal and a second input signal, respectively; Equipped with a first operating state of the first diode and a second operating state of the second diode are controlled by the first input signal and the second input signal, respectively; and the emitting layer is modulated according to the first operating state and the second operating state so that the electromagnetic wave forms either a single beam reflection or a double beam reflection after it is incident on the emitting layer, or is absorbed by the emitting layer.

12. The control module includes: A controller; a shift register connected to the controller; a bipolar junction transistor (BJT) having a base terminal connected to the shift register and an emitter terminal connected to the first voltage input terminal and the second voltage input terminal; a power supply connected to a collector terminal of the bipolar transistor; Including, The control circuit with a multi-function reconfigurable reflectarray structure as claimed in claim 11 , wherein the controller controls the shift register to generate the first input signal and the second input signal.

13. the emissive layer is operated in one of a reflective mode and an absorptive mode in response to the first operating state and the second operating state; when the emissive layer is operated in the reflective mode in a first reflective phase state, both the first input signal and the second input signal are zero, such that both the first operational state and the second operational state are off states; when the emissive layer is operated in the reflective mode in a second reflective phase state, the first operational state is an on state because the first input signal is one and the second operational state is an off state because the second input signal is zero; 12. The control circuit with a multifunctional reconfigurable reflectarray structure of claim 11, wherein when the emissive layer is operated in the absorption mode, the first input signal and the second input signal are both 1, so that the first operating state and the second operating state are both the on state.

14. There is an incidence distance between the electromagnetic wave source and the emitting layer, and the electromagnetic wave is incident on the emitting layer at an incidence angle and then reflected at a reflection angle; 14. The control circuit with a multifunction reconfigurable reflectarray structure as claimed in claim 13, wherein in the reflection mode, a reflection phase difference between the first reflection phase state and the second reflection phase state is 180°, and determines to form the one of the single beam reflection and the double beam reflection according to the incident distance, the incident angle, the reflection angle and the number of reflection angles after the electromagnetic wave is incident on the emissive layer.

15. 12. The control circuit with a multifunction reconfigurable reflectarray structure according to claim 11, wherein the first metal member and the second metal member are both rectangular, a short side of the first metal member has a first feed point electrically connected to the first voltage input terminal through two first conductive through holes, while a long side of the second metal member has a second feed point coupled to the second diode and electrically connected to the second voltage input terminal through two second conductive through holes.

16. The second metal member is a first short side aligned with the short side of the first metal member; a second short side aligned with the other short side of the first metal member; Including, 16. The control circuit with a multifunction reconfigurable reflectarray structure of claim 15, wherein a distance between the second feed point and the first short side is greater than a distance between the second feed point and the second short side.

17. The emissive layer comprises: further comprising an absorption resistor connected between the second metal member and the second diode; The control circuit with a multifunctional reconfigurable reflectarray structure according to claim 11 , wherein when both the first operating state and the second operating state are in an on state, the absorption resistor absorbs the electromagnetic wave.

18. a medium layer having an upper surface connected to the emissive layer; a first ground layer having an upper surface connected to a lower surface of the medium layer; a radio frequency suppression layer having an upper surface connected to a lower surface of the first ground layer; a second ground layer having an upper surface connected to the lower surface of the radio frequency suppression layer and a lower surface connected to the DC bias layer; A control circuit comprising the multi-function reconfigurable reflectarray structure according to claim 11, further comprising:

19. The radio frequency suppression layer is Two substrates stacked on top of each other; Two radio frequency choke units, each of which is fan-shaped, are disposed between the two substrates and are used to suppress the high frequency signal of the radiation layer from flowing into the DC bias layer; A control circuit comprising the multi-function reconfigurable reflectarray structure according to claim 18, comprising:

20. The control circuit with a multi-function reconfigurable reflectarray structure as claimed in claim 18 , wherein a total thickness of the emissive layer and the medium layer is equal to a thickness of the DC bias layer.

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