Processing device and processing method

Abstract

To provide a technique that can adjust the interplanar uniformity of gas supply to a substrate.SOLUTION: A processing apparatus includes: a processing container having a substantially cylindrical shape; a first injector extending in a longitudinal direction along the inner side of an inner wall of the processing container, wherein the first injector includes a first introduction port formed at a lower end and first gas holes formed in the extending portion; and a second injector extending upward along the inner side of the inner wall of the processing container, folded back at an upper portion, and then extending downward, wherein the second injector includes a second introduction port formed at a lower end of the upward extending portion and second gas holes formed in the downward extending portion. The first injector includes a first throttle portion having a cross-sectional area decreasing as the distance from the first introduction port increases. The second injector includes a second throttle portion formed in the downward extending portion and having a cross-sectional area decreasing as the distance from the second introduction port increases.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a processing apparatus and a processing method. [Background technology]

[0002] There is known a substrate processing apparatus including a processing vessel that houses a boat on which substrates are loaded, and an injector that extends vertically along the inner wall of the processing vessel in the vicinity of the processing vessel and has a plurality of gas holes in the longitudinal direction (see, for example, Patent Documents 1 and 2). Patent Document 1 discloses a gas injector whose diameter decreases with increasing distance from a gas supply port. Patent Document 2 discloses an apparatus provided with a first gas introduction pipe made of a straight pipe and a second gas introduction pipe made of a U-shaped pipe. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-097768 [Patent Document 2] JP 2001-110730 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can adjust the inter-surface uniformity of gas supply to a substrate. [Means for solving the problem]

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing vessel having a substantially cylindrical shape, a first injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the first injector having a first introduction port formed at a lower end and a plurality of first gas holes formed in the extended portion, and a second injector extending upward along the inner side of the inner wall of the processing vessel, folding back at an upper portion, and then extending downward, the second injector having a second introduction port formed at a lower end of the upwardly extending portion and a plurality of second gas holes formed in the downwardly extending portion, wherein the first injector includes a first throttling portion whose cross-sectional area decreases with increasing distance from the first introduction port, and the second injector includes a second throttling portion formed in the downwardly extending portion and whose cross-sectional area decreases with increasing distance from the second introduction port. fruit , A surface in which the plurality of first gas holes are formed in the first narrowed portion and a surface in which the plurality of second gas holes are formed in the second narrowed portion are parallel to a vertical direction. . Effect of the Invention

[0006] According to the present disclosure, the inter-surface uniformity of gas supply to a substrate can be adjusted. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating an example of a processing apparatus according to an embodiment; [Diagram 2] FIG. 1 is a schematic diagram of an injector viewed from the center in the radial direction of a processing vessel; [Diagram 3] Schematic diagram of an injector viewed from the circumferential direction of a processing vessel. [Figure 4] Schematic diagram of an injector viewed from the circumferential direction of a processing vessel. [Diagram 5] Schematic diagram of an injector viewed from the circumferential direction of a processing vessel. [Figure 6] Schematic diagram of an injector viewed from the circumferential direction of a processing vessel. [Figure 7] FIG. 1 is a schematic diagram of an injector viewed from the center in the radial direction of a processing vessel; [Figure 8] FIG. 1 is a schematic diagram of an injector viewed from the center in the radial direction of a processing vessel; [Figure 9] Diagram showing the four different injector configurations used in the analysis. [Figure 10] Figure showing the analysis results of the mass flow rate of all gases [Figure 11] Figure showing the analysis results of the mass flow rate of SiH2 [Figure 12] Diagram showing the five different injector configurations used in the analysis. [Figure 13] Figure showing the analysis results of the mole fraction of SiH2 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [Processing Device] An example of a processing apparatus according to an embodiment will be described with reference to Fig. 1. The processing apparatus according to the embodiment is a batch-type vertical processing apparatus capable of simultaneously forming films on a plurality of substrates. The processing apparatus according to the embodiment is an apparatus for depositing a film on a substrate by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0010] The processing apparatus 10 has a processing vessel 34 for accommodating a substrate W, and a lid 36 for closing an opening at the bottom end of the processing vessel 34 on the Z2 side. The substrate W is, for example, a semiconductor wafer such as a silicon wafer. The processing apparatus 10 further has a boat 38 that can be accommodated in the processing vessel 34 and holds a plurality of substrates W at predetermined intervals, a gas supply unit 40 that supplies gas into the processing vessel 34, and an exhaust unit 41 that exhausts gas from within the processing vessel 34. A heating unit 42 that heats the inside of the processing vessel 34 is provided outside the processing vessel 34.

[0011] The processing vessel 34 is formed of a substantially cylindrical inner tube 44 whose lower end on the Z2 side is open and has a ceiling portion 44A on the Z1 side, and a substantially cylindrical outer tube 46 whose lower end on the Z2 side is open and has a ceiling on the Z1 side covering the outside of the inner tube 44. The inner tube 44 and the outer tube 46 are formed of a heat-resistant material such as quartz, and are arranged coaxially along the Z1-Z2 direction to form a double tube structure.

[0012] A ceiling portion 44A of the inner pipe 44 is, for example, flat. A nozzle accommodating portion 48 that accommodates injectors 76, 77, which will be described later, is formed inside the inner pipe 44 along the Z1-Z2 direction. A protruding portion 50 that protrudes outward in the X1 direction is formed in a part of the side wall of the inner pipe 44, and the inside of the formed protruding portion 50 may serve as the nozzle accommodating portion 48. A rectangular opening 52 having a predetermined width is formed in the Z1-Z2 direction in the side wall on the X2 side, which is the opposite side of the inner pipe 44 facing the nozzle accommodating portion 48.

[0013] The opening 52 is an exhaust port for exhausting the inside of the inner pipe 44. The length of the opening 52 in the Z1-Z2 direction is the same as or longer than the length of the boat 38. That is, the upper end of the opening 52 on the Z1 side is formed longer on the Z1 side than a position corresponding to the upper end of the boat 38, and the lower end of the opening 52 on the Z2 side is formed longer on the Z2 side than a position corresponding to the lower end of the boat 38.

[0014] The lower end of the processing vessel 34 on the Z2 side is supported by a substantially cylindrical manifold 54 made of, for example, stainless steel. A flange portion 56 is formed on the upper end of the manifold 54 on the Z1 side, and the lower end of the outer pipe 46 on the Z2 side is connected onto the flange portion 56. A seal member 58 such as an O-ring is provided between the flange portion 56 and the outer pipe 46, and the flange portion 56 and the outer pipe 46 are connected via the seal member 58. In this embodiment, the area surrounded by the processing vessel 34, the manifold 54, and the lid 36 inside the processing vessel 34 may be referred to as the inside of the processing vessel.

[0015] An annular support 60 is provided on the inner wall on the Z1 side, which is the upper part of the manifold 54, and the lower end of the inner tube 44 on the Z2 side is placed on the support 60 to support it. A lid 36 is attached to the opening of the lower end on the Z2 side of the manifold 54 via a seal member 62 such as an O-ring, and hermetically closes the opening of the lower end on the Z2 side of the processing vessel 34, i.e., the opening of the manifold 54. The lid 36 is made of, for example, stainless steel.

[0016] A rotating shaft 66 is provided in the center of the lid 36, penetrating through the magnetic fluid seal portion 64. The lower portion of the rotating shaft 66 on the Z2 side is rotatably supported by an arm 68A of an elevation portion 68 made up of a boat elevator.

[0017] A rotating plate 70 is provided at the upper end of the rotating shaft 66 on the Z1 side, and the boat 38 holding the substrates W is placed on the rotating plate 70 via a quartz heat retention stand 72. Therefore, by raising and lowering the arm 68A by the lifting unit 68, the lid body 36 and the boat 38 move vertically as a unit, and the boat 38 can be inserted into and removed from the processing vessel 34.

[0018] The gas supply unit 40 is provided in the manifold 54 and can supply a process gas to the inside of the inner tube 44. The process gas includes, for example, a source gas and an additive gas. The source gas is a gas for depositing a film on the substrate W, and is, for example, monosilane (SiH 4 ), disilane (Si 2 H 6 The additive gas is a gas for diluting the source gas, and may be, for example, nitrogen (N 2 The gas may be an inert gas such as argon (Ar) or the like. The gas supply unit 40 has two injectors 76 and 77 made of quartz. However, the gas supply unit 40 may further have another injector. The injectors 76 and 77 have a plurality of gas holes 76a and 77a, respectively, for discharging the process gas. The injectors 76 and 77 will be described in detail later.

[0019] A substantially cylindrical heating unit 42 is provided on the outer periphery of the outer tube 46 so as to surround the periphery of the outer tube 46. The heating unit 42 can heat the substrate W accommodated in the processing vessel 34 and the gases in the injectors 76 and 77.

[0020] The injector 76 is connected to a processing gas supply source GS via a valve V1, a flow rate controller M1, and a valve V2. The injector 77 is connected to a processing gas supply source GS via a valve V3, a flow rate controller M2, and a valve V4. That is, the injectors 76 and 77 are connected to the same processing gas supply source GS. However, the injectors 76 and 77 may be connected to different processing gas supply sources.

[0021] In the injector 76, the processing gas from the processing gas supply source GS is introduced into the injector 76 via valves V1 and V2 under the control of a flow rate controller M1, and is discharged into the inner tube 44 of the processing vessel 34 through multiple gas holes 76a. In the injector 77, the processing gas from the processing gas supply source GS is introduced into the injector 77 via valves V3 and V4 under the control of a flow rate controller M2, and is discharged into the inner tube 44 of the processing vessel 34 through multiple gas holes 77a.

[0022] An exhaust port 82 is provided on the side wall on the Z1 side that constitutes the upper portion of manifold 54, above support portion 60, and gas inside inner tube 44 is exhausted from opening 52 via space 84 between inner tube 44 and outer tube 46. An exhaust unit 41 is connected to exhaust port 82. In exhaust unit 41, a pressure adjustment valve 88, an exhaust passage 86, and a vacuum pump 90 are provided in this order from exhaust port 82, and the inside of processing vessel 34 can be evacuated to a vacuum.

[0023] In this embodiment, a plurality of substrates W are placed inside the inner tube 44 along the Z1-Z2 direction perpendicular to the wafer surface, which is the substrate surface. Processing gas is discharged between the substrates W from a plurality of gas holes 76a, 77a formed in the injectors 76, 77. The discharged processing gas passes between the substrates W to process the substrates W, but gas that does not contribute to the processing exits the inner tube 44 from the opening 52 on the X2 side, passes through a space 84 between the inner tube 44 and the outer tube 46, and is exhausted from the exhaust port 82.

[0024] The overall operation of the processing device 10 is controlled by a control unit 95 such as a computer. Furthermore, a computer program for performing the overall operation of the processing device 10 may be stored in a storage medium 96. The storage medium 96 may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0025] [Injector] 2 to 4 in addition to Fig. 1, an example of an injector 76 provided in the processing apparatus 10 of Fig. 1 will be described. Fig. 2 is a schematic diagram of the injectors 76, 77 as viewed from the center side in the radial direction of the processing vessel 34. Figs. 3 and 4 are schematic diagrams of the injector 76 as viewed from the circumferential direction of the processing vessel 34.

[0026] The injector 76 is an upright dispersion injector that extends in the longitudinal direction along the inside of the inner wall of the processing vessel 34 and has a plurality of gas holes 76a formed at predetermined intervals along the longitudinal direction in the extending portion. The injector 76 is open at the bottom to form an introduction port 76b through which a processing gas is introduced, and is closed at the top.

[0027] The injector 76 includes a throttle section 76c whose cross-sectional area decreases with increasing distance from the inlet port 76b. This prevents the flow velocity from decreasing downstream of the gas flow, improving the uniformity of the mass flow rate of the process gas in the vertical direction. The throttle section 76c has a truncated cone shape. However, the shape of the throttle section 76c is not limited to this, and may be, for example, a cone shape, a polygonal pyramid shape, or a polygonal pyramid shape.

[0028] The gas holes 76a are formed in the narrowed portion 76c. However, some of the gas holes 76a may be formed at positions other than the narrowed portion 76c. The gas holes 76a are oriented toward the center of the processing vessel 34. As a result, the gas holes 76a discharge the processing gas introduced from the introduction port 76b in a substantially horizontal direction toward the center of the processing vessel 34. However, the gas holes 76a may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall of the processing vessel 34.

[0029] The gas holes 76a are arranged at a predetermined interval along the vertical direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the boat 38. The position of each gas hole 76a in the Z1-Z2 direction is located at the middle between adjacent substrates W in the Z1-Z2 direction, and the processing gas can be efficiently supplied to the space between the substrates W. However, the predetermined interval between each gas hole 76a is not limited to the above. A gas hole 76a may be provided for each of the substrates W. The position of each gas hole 76a is not limited to the middle between adjacent substrates W, and may be provided at any position, such as the same height as the substrate W.

[0030] As shown in Fig. 3, the injector 76 is arranged such that the tube axis 76d is inclined at an angle θ1 toward the center of the processing vessel 34 with respect to the vertical axis VA, and the surface 76e on which the multiple gas holes 76a are formed in the throttle section 76c is parallel to the vertical direction. This makes the distance L1 between the substrate W and the surface 76e on which the multiple gas holes 76a are formed in the throttle section 76c equal for all substrates W. However, as shown in Fig. 4, the injector 76 may be arranged such that the tube axis 76d is parallel to the vertical axis VA, and the surface 76e on which the multiple gas holes 76a are formed in the throttle section 76c is angled with respect to the vertical axis VA. In the example of Fig. 4, the distance L1 between the substrate W and the surface 76e on which the multiple gas holes 76a are formed in the throttle section 76c is longer at the upper part than at the lower part.

[0031] Next, an example of the injector 77 provided in the processing apparatus 10 of Fig. 1 will be described with reference to Figs. 5 and 6 in addition to Figs. 1 and 2. Figs. 5 and 6 are schematic views of the injector 77 as viewed from the circumferential direction of the processing vessel 34.

[0032] The injector 77 is a folded distribution injector that extends upward along the inside of the inner wall of the processing vessel 34, turns back at the top, and then extends downward, with a plurality of gas holes 77a formed at predetermined intervals along the longitudinal direction in the downward extending portion. The injector 77 is provided at a position adjacent to the injector 76 in the circumferential direction of the processing vessel 34. However, the injector 77 may also be provided at a position adjacent to the injector 76 in the radial direction of the processing vessel 34.

[0033] The injector 77 has an upwardly extending portion that is open at its lower portion to form an introduction port 77b through which a processing gas is introduced, and a downwardly extending portion that is closed at its lower portion.

[0034] The portion extending downward of the injector 77 includes a throttle portion 77c whose cross-sectional area decreases with increasing distance from the inlet port 77b. This prevents the flow velocity from decreasing downstream of the gas flow, improving the uniformity of the mass flow rate of the process gas in the vertical direction. The throttle portion 77c has a truncated cone shape. However, the shape of the throttle portion 77c is not limited to this, and may be, for example, a cone shape, a polygonal pyramid shape, or a polygonal pyramid shape.

[0035] The gas holes 77a are formed in the narrowed portion 77c. However, some of the gas holes 77a may be formed at positions other than the narrowed portion 77c. The gas holes 77a are oriented toward the center of the processing vessel 34. As a result, the gas holes 77a discharge the processing gas introduced from the introduction port 77b in a substantially horizontal direction toward the center of the processing vessel 34. However, the gas holes 77a may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall of the processing vessel 34.

[0036] The gas holes 77a are arranged at a predetermined interval along the vertical direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the boat 38. The position of each gas hole 77a in the Z1-Z2 direction is located at the middle between the adjacent substrates W in the Z1-Z2 direction, and the processing gas can be efficiently supplied to the space between the substrates W. However, the predetermined interval between each gas hole 77a is not limited to the above. A gas hole 77a may be provided for each of the substrates W. The position of each gas hole 77a is not limited to the middle between the adjacent substrates W, and may be provided at any position, such as the same height as the substrate W.

[0037] 2, the multiple gas holes 77a are disposed at the same height position as the multiple gas holes 76a. However, the multiple gas holes 77a may be disposed at a different height position than the multiple gas holes 76a.

[0038] As shown in Fig. 5, the injector 77 is disposed such that the tube axis 77d is inclined at an angle θ2 toward the inner wall of the processing vessel 34 with respect to the vertical axis VA, and the surface 77e on which the multiple gas holes 77a are formed in the throttle section 77c is parallel to the vertical axis VA. This makes the distance L2 between the substrate W and the surface 77e on which the multiple gas holes 77a are formed in the throttle section 77c equal for all substrates W. However, as shown in Fig. 6, the injector 77 may be disposed such that the tube axis 77d is parallel to the vertical axis VA, and the surface 77e on which the multiple gas holes 77a are formed in the throttle section 77c is disposed at an angle with respect to the vertical axis VA. In the example of Fig. 6, the distance L2 between the substrate W and the surface 77e on which the multiple gas holes 77a are formed in the throttle section 77c is longer at the lower part than at the upper part.

[0039] As shown in FIG. 2, the cross-sectional area of ​​the injector 77 is the same as that of the upper part of the injector 77 extending downward. However, as shown in FIG. 7, it is preferable that the cross-sectional area of ​​the injector 77 extending upward is smaller than that of the upper part of the injector 77 extending downward. This increases the flow rate of the process gas introduced from the injector 77b into the injector 77 until it reaches the narrowed portion 77c, and shortens the residence time until it reaches the narrowed portion 76c. Therefore, the residence time of the process gas introduced from the injector 77b into the injector 77 until it reaches the narrowed portion 77c can be made close to the residence time of the process gas introduced from the injector 76 into the injector 76 from the injector 76b until it reaches the narrowed portion 76c. As a result, the thermal decomposition rate of the process gas in the injector 77 can be made to be approximately the same as that of the process gas in the injector 76.

[0040] 2, injector 77 is disposed so that the upper end of the upper portion folded back from above to below is at the same height as the upper end of injector 76. However, injector 77 may be disposed so that the upper end of the upper portion folded back from above to below is at a different height than the upper end of injector 76, for example, at a height higher than the upper end of injector 76, as shown in FIG.

[0041] Incidentally, when the silicon-containing gas, which is the raw material gas, is introduced into the injector, it is heated by the heating unit while flowing from the upstream to the downstream in the injector. Therefore, the silicon-containing gas discharged from the gas hole located upstream of the gas flow and the silicon-containing gas discharged from the gas hole located downstream are heated for different times in the injector. As a result, the flow rate and the thermal decomposition rate are different between the silicon-containing gas discharged from the gas hole located upstream and the silicon-containing gas discharged from the gas hole located downstream, and the uniformity of the film properties of the silicon film formed between the substrates W varies.

[0042] The processing apparatus 10 of the embodiment includes an upright distribution injector (injector 76) whose lower portion is on the upstream side of the gas flow and whose upper portion is on the downstream side of the gas flow, and a folded distribution injector (injector 77) whose upper portion is on the upstream side of the gas flow and whose lower portion is on the downstream side of the gas flow. That is, the injectors 76 and 77 included in the processing apparatus 10 of the embodiment are vertically reversed in the positional relationship between the upstream side and the downstream side of the gas flow. As a result, the same source gas (e.g., silicon-containing gas) is simultaneously supplied from the injectors 76 and 77, thereby offsetting non-uniformity in the supply of the source gas in the vertical direction.

[0043] According to the processing apparatus 10 of the embodiment, the injectors 76 and 77 include the constricted portions 76c and 77c whose cross-sectional areas become smaller with increasing distance from the inlet ports 76b and 77b, respectively. This makes it possible to prevent the flow velocity from decreasing on the downstream side of the gas flow, thereby improving the uniformity of the pyrolysis rate of the raw material gas in the vertical direction.

[0044] This makes it possible to improve the vertical uniformity of the mass flow rate and the thermal decomposition rate of the source gas discharged toward the substrate W. As a result, the uniformity of the film properties of the silicon film formed among the substrates W is improved.

[0045] [Analysis results] The results of an analysis using computational fluid dynamics (CFD) (hereinafter referred to as "CFD analysis") will be described with reference to FIGS. 9 to 13.

[0046] In the CFD analysis, the source gas (Si 2 H 6 When the shape of the injector used to supply the gas was changed, the mass flow rate of the total gas in the injector, the reactive species (SiH 2 The mass flow rate and mole fraction of the reactive species (SiH 2 The mass flow rate and mole fraction of the source gas (Si 2 H6 ) is thermally decomposed to produce reactive species (Si 2 H 6 ) is considered to be caused by the concentration of

[0047] First, referring to Figs. 9 to 11, injectors A to D having four different shapes were used to measure Si 2 H 6 Mass flow rate of all gases and SiH 2 The results of analyzing the mass flow rate are explained below.

[0048] Fig. 9 is a diagram showing the configurations of four different injectors A to D used in the analysis. Note that gas holes are not shown in Fig. 9.

[0049] As shown in FIG. 9, injector A has the same structure as injector 76 shown in FIG. 7, and is an upright dispersion injector having a truncated cone shape whose cross-sectional area decreases with increasing distance from the introduction port at the bottom. Injector B has the same structure as injector 77 shown in FIG. 7, and is a folded dispersion injector having a truncated cone shape whose downward extending portion decreases in cross-sectional area with increasing distance from the introduction port. Injector C is a combination of injectors A and B. Injector D is a combination of a cylindrical upright dispersion injector having a constant cross-sectional area from the bottom end to the top end and a cylindrical folded dispersion injector having a downward extending portion having a constant cross-sectional area.

[0050] Fig. 10 is a diagram showing the analysis results of the mass flow rate of all gases. In Fig. 10, the horizontal axis indicates the position of the gas hole, and the vertical axis indicates the mass flow rate of all gases (Mass Flow Rate) [sccm]. The position of the gas hole indicates the number of the gas hole from the top.

[0051] As shown in Figure 10, when injector C is used, the uniformity of the mass flow rate of all gases in the vertical direction is improved compared to when injectors A and B are used. This result shows that the use of the truncated cone-shaped upright distribution injector and the truncated cone-shaped folded distribution injector improves the uniformity of the mass flow rate of all gases in the vertical direction.

[0052] Figure 11 shows the SiH 2 11 is a diagram showing the analysis results of the mass flow rate of SiH. In FIG. 11, the horizontal axis indicates the position of the gas hole, and the vertical axis indicates the mass flow rate of SiH. 2 Mass Flow Rate of SiH 2 ) [sccm]. The position of the gas hole indicates the number of the gas hole from the top.

[0053] As shown in FIG. 11, when injector C was used, the SiH 2 It can be seen that the uniformity of the mass flow rate of SiH in the vertical direction is improved by using the truncated cone-shaped upright dispersion injector and the truncated cone-shaped folded dispersion injector. 2 It was shown that the uniformity of the mass flow rate of Si in the vertical direction was improved by using the upright dispersion injector with a truncated cone shape and the folded dispersion injector with a truncated cone shape. 2 H 6 It can be said that the uniformity of the thermal decomposition rate in the vertical direction is improved.

[0054] Next, referring to Figs. 12 and 13, Si 2 H 6 When discharging SiH 2 The results of the analysis of the thermal decomposition rate of

[0055] Fig. 12 is a diagram showing the configurations of five different injectors E to I used in the analysis. Note that gas holes are not shown in Fig. 12.

[0056] As shown in FIG. 12, injector E has the same structure as injector 76 shown in FIG. 7, and is an upright dispersion injector with a truncated cone shape whose cross-sectional area decreases with increasing distance from the lower end introduction port. Injector F has the same structure as injector 77 shown in FIG. 2, and is a folded dispersion injector with a truncated cone shape whose downward extending portion has a cross-sectional area that decreases with increasing distance from the introduction port. Injector G is a folded dispersion injector with a truncated cone shape whose downward extending portion has a cross-sectional area that decreases with increasing distance from the introduction port, similar to injector 77 shown in FIG. 7. Injector H is a combination of injector E and injector F. Injector I is a combination of injector E and injector G.

[0057] Figure 13 shows the SiH 2 13 is a diagram showing the analysis results of the mole fraction of SiH. In FIG. 13, the horizontal axis indicates the position of the gas hole, and the vertical axis indicates the mole fraction of SiH. 2 Mole Fraction of SiH 2 The position of the gas hole indicates the number of the gas hole from the top.

[0058] As shown in FIG. 13, when injectors H and I were used, the SiH 2 From this result, it can be seen that the uniformity of the mole fraction of SiH in the vertical direction is improved by using the upright dispersion injector with a truncated cone shape and the folded dispersion injector with a truncated cone shape. 2 It was shown that the uniformity of the mole fraction of Si in the vertical direction was improved by using the truncated cone-shaped upright dispersion injector and the truncated cone-shaped folded dispersion injector. 2 H 6 It can be said that the uniformity of the thermal decomposition rate in the vertical direction is improved.

[0059] In addition, as shown in FIG. 13, when injector G was used, the amount of SiH 2It can be seen that the mole fraction of SiH is shifted to a smaller value. Similarly, when injector I is used, the mole fraction of SiH is shifted to a smaller value compared to when injector H is used. 2 From this result, it can be seen that the mole fraction of SiH is shifted in the direction of decreasing. 2 It was shown that the mole fraction of can be relatively small.

[0060] In the above embodiment, the injector 76, the gas hole 76a, the introduction port 76b, and the throttle portion 76c are examples of a first injector, a first gas hole, a first introduction port, and a first throttle portion, respectively. Also, the injector 77, the gas hole 77a, the introduction port 77b, and the throttle portion 77c are examples of a second injector, a second gas hole, a second introduction port, and a second throttle portion, respectively.

[0061] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0062] 10 Processing equipment 34 Processing vessel 76,77 Injector 76a, 77a Gas hole 76b,77b Introduction port 76c, 77c Constriction section

Claims

1. A processing vessel having a substantially cylindrical shape; a first injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the first injector having a first introduction port formed at a lower end and a plurality of first gas holes formed in the extending portion; a second injector extending upward along the inside of an inner wall of the processing vessel, turning back at an upper portion and then extending downward, the second injector having a second introduction port formed at a lower end of the upwardly extending portion and a plurality of second gas holes formed in the downwardly extending portion; Equipped with the first injector includes a first throttle portion having a cross-sectional area that decreases with increasing distance from the first introduction port; the second injector includes a second throttle portion formed in the downwardly extending portion, the second throttle portion having a cross-sectional area that decreases with increasing distance from the second introduction port, a surface of the first throttle portion in which the plurality of first gas holes are formed and a surface of the second throttle portion in which the plurality of second gas holes are formed are parallel to a vertical direction; Processing unit.

2. the second injector has a cross-sectional area of ​​the upwardly extending portion smaller than a cross-sectional area of ​​the downwardly extending portion; The processing device of claim 1 .

3. The plurality of first gas holes and the plurality of second gas holes are arranged at the same height position. The processing device according to claim 1 or 2.

4. The plurality of first gas holes are formed in the first throttle portion. The processing device according to any one of claims 1 to 3.

5. The plurality of second gas holes are formed in the second throttle portion. The processing device according to any one of claims 1 to 4.

6. The first and second throttling portions have a conical shape or a frusto-conical shape. The processing device according to any one of claims 1 to 5.

7. A processing vessel having a substantially cylindrical shape; a first injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the first injector having a first introduction port formed at a lower end and a plurality of first gas holes formed in the extending portion; a second injector extending upward along the inside of an inner wall of the processing vessel, turning back at an upper portion and then extending downward, the second injector having a second introduction port formed at a lower end of the upwardly extending portion and a plurality of second gas holes formed in the downwardly extending portion; Equipped with the first injector includes a first throttle portion having a cross-sectional area that decreases with increasing distance from the first introduction port; the second injector includes a second throttle portion formed in the downwardly extending portion, the second throttle portion having a cross-sectional area that decreases with increasing distance from the second introduction port, the plurality of first gas holes are formed in the first throttle portion, The plurality of second gas holes are formed in the second throttle portion. A processing method in a processing device, comprising: supplying the same process gas from the first injector and the second injector simultaneously. Processing methods.

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