adhesive tape

Abstract

To provide an adhesive tape with which, when cutting a substrate pasted to the adhesive tape for individuation to obtain components, it is possible to precisely suppress or prevent the occurrence of glue adhesion of a portion of adhesive layer of the adhesive tape sticking to a side face of the obtained component.SOLUTION: An adhesive tape 100 comprises a base material 4 and an adhesive layer 2, with at least one of a substrate and a component used by being temporarily fixed in place, and the adhesive layer 2 having its adhesive force reduced by addition of energy. This adhesive tape 100 satisfies, regarding the displacement-stress curve measured when a test piece of the adhesive layer 2 is elongated at 25°C in the longitudinal direction under a chuck interval distance of 10 mm and a tensile speed of 50 mm / min before energy is added to the adhesive layer 2, that a rupture elongation W is 200% to 1000% inclusive, and a workload till the elongation of the test piece reaches 100% is 300 J / m3 to 200 J / m3 inclusive.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to an adhesive tape used for temporarily fixing a substrate and a component. [Background technology]

[0002] In response to the recent trend toward more sophisticated electronic devices and the expansion of mobile applications, there is a growing demand for higher density and integration of semiconductor devices, and IC packages are becoming larger in capacity and higher in density.

[0003] For example, a method for manufacturing these semiconductor devices involves first applying adhesive tape to a semiconductor substrate (semiconductor wafer) as a substrate, and then dicing the semiconductor substrate in the thickness direction using a dicing saw while fixing the periphery of the semiconductor substrate with a wafer ring. This results in the semiconductor substrate being cut into individual semiconductor elements (semiconductor chips). This is followed by an expanding process in which the adhesive tape is radially stretched using a wafer ring to form gaps between adjacent semiconductor elements. This is followed by a pick-up process in which the singulated semiconductor elements are picked up while being pushed up using a needle. The picked-up semiconductor elements are then transferred to a mounting process in which they are mounted on a metal lead frame or substrate (e.g., a tape substrate, an organic hard substrate, etc.). In the mounting process, the picked-up semiconductor elements are bonded to a lead frame or substrate, for example, via an underfill material. The semiconductor elements are then encapsulated on the lead frame or substrate with a sealing portion, thereby producing a semiconductor device.

[0004] In recent years, various studies have been conducted on adhesive tapes (dicing tapes) used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

[0005] This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor substrate is fixed by the adhesive layer. With an adhesive tape having such a configuration, as in the above-mentioned method for manufacturing a semiconductor device, a pick-up process for picking up semiconductor elements is carried out after a dicing process for dicing the semiconductor substrate. That is, in the dicing process, the semiconductor substrate is divided into individual pieces using a disk-shaped dicing saw to obtain semiconductor elements. In the pick-up process, energy is applied to the adhesive layer to reduce the adhesive strength of the adhesive layer, and then the semiconductor elements are pushed up using a needle. While maintaining this state, the semiconductor elements are picked up by suction using a vacuum collet or air tweezers, for example.

[0006] However, when manufacturing a semiconductor device using this adhesive tape, the dicing process, in which a dicing saw is used to separate a semiconductor substrate into individual semiconductor elements, has the following problems. Specifically, in the dicing process, when the semiconductor substrate is diced (cut) in the thickness direction using a dicing saw to separate the semiconductor substrate into individual semiconductor elements, the cutting of the semiconductor substrate is generally continued until it reaches the middle of the thickness direction of the base material of the adhesive tape in order to ensure the semiconductor substrate is individually separated. Therefore, the adhesive layer of the adhesive tape located closer to the semiconductor substrate than the base material is naturally cut by the dicing saw when the semiconductor substrate is cut. This has led to the problem of adhesive adhesion, whereby portions of the cut adhesive layer adhere to the side surfaces of the semiconductor elements obtained by separating the semiconductor substrate. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-245989 Summary of the Invention [Problem to be solved by the invention]

[0008] The present invention aims to provide an adhesive tape that can accurately suppress or prevent the occurrence of glue adhesion, in which part of the adhesive layer of the adhesive tape adheres to the side surface of the obtained semiconductor chip when a semiconductor wafer as a substrate attached to the adhesive tape is cut in the thickness direction to obtain semiconductor chips as components. [Means for solving the problem]

[0009] These objects can be achieved by the present invention as set forth in (1) to (12) below. (1) An adhesive tape used for temporarily fixing a semiconductor wafer as a substrate and a component, the adhesive tape comprising a base material and an adhesive layer laminated on one surface of the base material, the adhesive tape being used for temporarily fixing a semiconductor wafer as a substrate and a component, the adhesive tape being used for temporarily fixing the substrate and the component, the adhesive layer being used for temporarily fixing the substrate and the ... the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the adhesive strength of the adhesive layer is reduced by applying energy to the adhesive layer to cure the adhesive layer; A test piece made of the pressure-sensitive adhesive layer having a size of 0.5 mm thick x 6 mm wide x 20 mm long was prepared, and before the application of the energy, the test piece was stretched in the longitudinal direction under the conditions of a chuck distance of 10 mm at 25°C and a tensile speed of 50 mm / min. In the displacement-stress curve measured when the test piece was stretched, the breaking elongation W was 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece was 300 J / m 3 More than 2000J / m 3 An adhesive tape characterized by:

[0010] (2) The pressure-sensitive adhesive tape according to (1), wherein the curable resin is at least one of urethane acrylate and bisphenol A-based epoxy acrylate.

[0011] (3) The adhesive tape according to (1) or (2), wherein the base resin is an acrylic resin.

[0012] (4) The pressure-sensitive adhesive tape according to (3), wherein the acrylic resin is a copolymer having an amide monomer as a structural unit.

[0013] (5) The pressure-sensitive adhesive tape according to any one of (1) to (4) above, wherein the pressure-sensitive adhesive layer further contains a crosslinking agent, and the crosslinking agent is an isocyanate-based crosslinking agent.

[0014] (6) The adhesive tape according to any one of (1) to (5) above, wherein the adhesive layer further contains a silicone material as an oil repellent.

[0015] (7) The adhesive tape according to any one of (1) to (6) above, wherein the substrate contains an antistatic agent.

[0016] (8) The adhesive tape according to any one of (1) to (7) above, which is used when a semiconductor wafer is fixed on the adhesive layer as the substrate, the semiconductor wafer is cut so as to reach partway through the thickness direction of the base material to separate the semiconductor wafer into individual pieces to form a plurality of semiconductor chips as the components, and then the adhesive tape is stretched in the length direction while the semiconductor chips are pushed up from the base material side and pulled out from the opposite side of the base material to detach them from the adhesive layer.

[0017] (9) The adhesive tape according to any one of (1) to (8) above, wherein the adhesive layer has a thickness of 5 μm or more and 15 μm or less.

[0018] (10) The pressure-sensitive adhesive tape according to any one of (1) to (9), wherein the stress X when the elongation is 100% in the displacement-stress curve is 0.04 MPa or more and 0.4 MPa or less.

[0019] (11) The adhesive tape according to any one of (1) to (10) above, which satisfies the following requirement A: Requirement A: The adhesive tape has a peel strength A of 30 cN / 20 mm or more and 300 cN / 20 mm or less, as measured when a 20 mm wide piece of the adhesive tape is attached to a #2000 polished silicon wafer with the adhesive layer facing the silicon wafer, the energy is applied to the adhesive layer, and then one end of the adhesive tape is held and peeled off at a speed of 1000 mm / min in a direction of 30° at 25°C.

[0020] (12) The adhesive tape according to any one of (1) to (11) above, which satisfies the following requirement B: Requirement B: When a silicon substrate is fixed to the adhesive tape and then cut into individual pieces using a 30 μm thick blade at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s until the silicon substrate reaches half the thickness of the base material in the thickness direction, thereby obtaining silicon chips measuring 4 mm long x 4 mm wide, the adhesion rate of the adhesive layer adhering to the side of the silicon chip due to the cutting must be 5.0% or less. [Effects of the Invention]

[0021] According to the present invention, a pressure-sensitive adhesive tape is prepared by preparing a test piece made of the pressure-sensitive adhesive layer having a size of 0.5 mm thick x 6 mm wide x 20 mm long before applying energy to the pressure-sensitive adhesive layer, and stretching the test piece in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min, and measuring the test piece so that the fracture elongation W is 200% or more and 1000% or less in a displacement-stress curve measured before applying energy to the test piece, and the work required to elongate the test piece to 100% is 300 J / m 3 More than 2000J / m 3 Therefore, when semiconductor chips are obtained as components by cutting the semiconductor wafer as a substrate attached to the adhesive tape in the thickness direction to separate it before applying energy to the adhesive layer of the adhesive tape, it is possible to reliably suppress or prevent glue adhesion, in which a part of the adhesive layer of the adhesive tape adheres to the side surface of the obtained semiconductor chip. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. [Figure 2] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 3] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 4] FIG. 3 is an enlarged cross-sectional view of the area around the needle located in the area [A] surrounded by the dotted line in FIG. 2. [Figure 5] 1 is a longitudinal cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. [Figure 6] 6 is a vertical cross-sectional view illustrating a method for producing the pressure-sensitive adhesive tape shown in FIG. 5. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0023] The pressure-sensitive adhesive tape of the present invention will be described in detail below. First, before describing the pressure-sensitive adhesive tape of the present invention, a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention will be described.

[0024] <Semiconductor device> Figure 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Figure 1 will be referred to as "top" and the lower side as "bottom." In addition, in each drawing referred to in this specification, dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0025] The semiconductor device 10 shown in Figure 1 has a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a molded portion (sealing portion) 17 that seals the semiconductor chip 20.

[0026] The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin), etc. The planar shape of the interposer 30 is usually a quadrangle such as a square or rectangle.

[0027] On the upper surface (one surface) of the interposer 30, terminals 41 made of a conductive metal material such as copper are provided in a predetermined shape.

[0028] Furthermore, a plurality of vias (through holes) (not shown) are formed in the interposer 30 so as to penetrate through the interposer 30 in the thickness direction.

[0029] Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 through a respective via, and the other end (lower end) protrudes from the lower surface (other surface) of the interposer 30.

[0030] The portion of the bump 70 that protrudes from the interposer 30 is substantially spherical (ball-shaped).

[0031] The bumps 70 are mainly made of a brazing material such as solder, silver brazing, copper brazing, or phosphorus copper brazing.

[0032] Furthermore, terminals 41 are formed on the interposer 30. Terminals 21 of the semiconductor chip 20 are electrically connected to the terminals 41 via connecting portions 81.

[0033] In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30.

[0034] The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the hardened underfill material forms a sealing layer 80. This sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing the intrusion of foreign matter, moisture, etc. into the gap.

[0035] Furthermore, on the upper side of the interposer 30, a molded portion 17 formed to cover the semiconductor chip 20 and the interposer 30 is made of a hardened semiconductor sealing material (sealant), thereby sealing the semiconductor chip 20 within the semiconductor device 10 and preventing the intrusion of foreign matter, moisture, etc. into the semiconductor chip 20.

[0036] 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body 23 (semiconductor element body) and terminals 21 protruding from the lower surface of the semiconductor chip body 23. A circuit (not shown) is built into the upper surface of the semiconductor chip body 23, and the semiconductor chip body 23 is mainly made of a semiconductor material such as Si, SiC, GaN, or Ga2O3.

[0037] The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows by, for example, a method for manufacturing a semiconductor device using an adhesive tape.

[0038] <Method of manufacturing a semiconductor device> 2 and 3 are longitudinal cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention, and FIG. 4 is an enlarged cross-sectional view of the periphery of a needle located in the area [A] surrounded by a dotted line in FIG. 2. In the following description, the upper side in FIGS. 2 to 4 will be referred to as "upper" and the lower side will be referred to as "lower." In addition, in each of the drawings referred to in this specification, the dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0039] [1A] First, prepare an adhesive tape 100 composed of a laminate having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4. As shown in FIG. 2(a), place a semiconductor substrate 7 (semiconductor wafer) at the center 122 on the adhesive layer 2 and lightly press down to laminate (attach) the semiconductor substrate 7 (attachment process).

[0040] This semiconductor substrate 7 has circuits formed in advance on its upper surface, which will be included in the semiconductor chips 20 (semiconductor chip main body portions 23) formed by singulation, and terminals 21 formed in advance on its lower surface, and the semiconductor substrate 7 is attached to the adhesive tape 100 with the upper surface on which the circuits are formed facing the adhesive layer 2. Therefore, the upper surface of the semiconductor substrate 7 on which the circuits are formed, i.e., the uneven surface on which the unevenness is formed, is bonded to the adhesive layer 2. Furthermore, the semiconductor substrate 7 typically has a diameter of approximately 6 inches to 12 inches and a thickness of approximately 100 μm to 600 μm.

[0041] In this main step [1A], the adhesive tape 100 of the present invention is used. That is, when the semiconductor substrate 7 as the substrate in this step [1A] is attached to the adhesive tape 100 with the uneven surface on which the circuit is formed facing the adhesive tape 100, a test piece of the adhesive layer 2 having a thickness of 0.5 mm, a width of 6 mm, and a length of 20 mm is prepared as the adhesive tape 100 before applying energy to the adhesive layer 2, and this test piece is elongated in the longitudinal direction under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min at 25°C. In the displacement-stress curve measured, the breaking elongation W is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3 The following conditions are satisfied:

[0042] Therefore, in this process [1A], when the semiconductor substrate 7 as a substrate is attached to the adhesive tape 100 with the uneven surface on which the circuit is formed facing the adhesive tape 100, the semiconductor substrate 7 can be reliably attached to the adhesive tape 100 while accurately suppressing or preventing the adhesive layer 2 from unintentionally embedding into the unevenness of this uneven surface, a detailed explanation of which will be given later.

[0043] [2A] Next, as shown in FIG. 2(b), the adhesive tape 100 on which the semiconductor substrate 7 is laminated is placed on a dicer table 200.

[0044] [3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed with a wafer ring 9, and then, using a disc-shaped dicing saw (blade) not shown, the semiconductor substrate 7 as a substrate is cut (diced) in the thickness direction to separate the semiconductor substrate 7, thereby obtaining semiconductor chips 20 as components on the adhesive tape 100 (singulation process; see Figure 2(c)).

[0045] At this time, the adhesive tape 100 has a cushioning effect and prevents cracks, chips, etc. from occurring when the semiconductor substrate 7 is cut.

[0046] 2(c), the cutting of the semiconductor substrate 7 using the blade is performed so as to reach partway through the thickness direction of the base material 4. This ensures that the semiconductor substrate 7 can be divided into individual pieces.

[0047] At this time, the semiconductor substrate 7 is cut while cutting water is supplied to the semiconductor substrate 7 in order to prevent the scattering of dust generated when the semiconductor substrate 7, adhesive layer 2, and base material 4 are cut, and also to prevent the semiconductor substrate 7 from being unnecessarily heated.

[0048] In this main step [3A], the adhesive tape 100 of the present invention is used. That is, when the semiconductor substrate 7 as a substrate is cut in the thickness direction to separate it into individual pieces to obtain semiconductor chips 20 as components in this step [3A], a test piece made of the adhesive layer 2 and having a size of 0.5 mm thick x 6 mm wide x 20 mm long is prepared as the adhesive tape 100 before applying energy to the adhesive layer 2, and the test piece is elongated in the length direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min. In the displacement-stress curve measured before the application of energy, the breaking elongation W is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3 The following conditions are satisfied:

[0049] Therefore, in this process [3A], when the semiconductor substrate 7 is cut in the thickness direction to separate it into individual semiconductor chips 20, it is possible to effectively suppress or prevent the occurrence of glue adhesion on the side surfaces of the semiconductor chips 20 as the obtained components, with a portion of the adhesive layer 2 provided on the adhesive tape 100 being adhered thereto, but a detailed explanation of this will be given later.

[0050] [4A] Next, the adhesive tape 100 with the semiconductor substrate 7 attached and fixed by the wafer ring 9 is transferred from the dicing device (not shown) to a pickup device (not shown), and while the adhesive layer 2 is fixed by the wafer ring 9 at the outer periphery 121, the center 310 is pushed upward against the outer periphery 320 of the table 300, thereby stretching the adhesive tape 100 radially, thereby forming gaps with a fixed distance between the individual semiconductor substrates 7, i.e., the semiconductor chips 20 as components (expanding process; see Figure 2(d)).

[0051] Prior to the next step [5A], energy is applied to the adhesive layer 2 to reduce its adhesive strength to the semiconductor chip 20, but this application of energy to the adhesive layer 2 may be performed after the expanding step in this step [4A] or prior to the expanding step.

[0052] [5A] Next, with a gap formed by the process [4A], the semiconductor chip 20 is picked up on the stage 400 by suction with a vacuum collet or air tweezers (pick-up process; see Figure 2(e)).

[0053] More specifically, the pickup of the semiconductor chip 20 is performed as follows. That is, first, in the step [4A], the expanding step of radially expanding the adhesive tape 100 is performed. After the expanding step of radially expanding the adhesive tape 100 in the step [4A], or prior to the expanding step, energy is applied to the adhesive layer 2 to harden the adhesive layer 2 and reduce the adhesive strength of the adhesive layer 2. Then, the needle 430 (not shown in FIG. 2) is changed from a state in which it is housed in the ejector head 410 as shown in FIG. 4(a) to a state in which it is protruded from the ejector head 410 as shown in FIG. 4(b). That is, the needle 430 is protruded in the thickness direction. As a result, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up using the needle 430, causing it to be peeled off from the adhesive tape 100, and then the semiconductor chip 20 is picked up by suction using a vacuum collet or air tweezers, as shown in Figure 4(c).

[0054] In this main step [5A], the adhesive tape 100 of the present invention is used. That is, when the semiconductor chip 20 as a component is picked up from the adhesive tape 100 in this step [5A] by suction or the like using a vacuum collet or air tweezers, a test piece of the adhesive layer 2 having a thickness of 0.5 mm, a width of 6 mm, and a length of 20 mm is prepared as the adhesive tape 100 before applying energy to the adhesive layer 2, and this test piece is elongated in the longitudinal direction under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min at 25°C. In the displacement-stress curve measured, the breaking elongation W is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3 The following conditions are satisfied:

[0055] Therefore, in this process [5A], when the semiconductor chip 20 as a component is picked up from the adhesive tape 100 by suction using a vacuum collet or air tweezers, the improved pickup properties can effectively suppress or prevent the occurrence of adhesive residue remaining on the back surface of the semiconductor chip 20 as a component from which a portion of the adhesive layer 2 provided on the adhesive tape 100 has been obtained, but a detailed explanation of this will be given later.

[0056] By performing the above-described steps [1A] to [5A], the semiconductor chips 20 are separated (diced) from the semiconductor substrate 7 using the adhesive tape 100. That is, with the semiconductor substrate 7 fixed on the adhesive layer 2 of the adhesive tape 100, the adhesive tape 100 is cut from the semiconductor substrate 7 to reach partway in the thickness direction of the base material 4, and the semiconductor substrate 7 is diced into individual pieces to form a plurality of semiconductor chips 20. Thereafter, energy is applied to the adhesive layer 2 to harden the adhesive layer 2, and in a state where gaps are formed between the semiconductor chips 20 at regular intervals, the semiconductor chips 20 are pushed up from the base material 4 side and pulled out from the opposite side of the base material 4, whereby the semiconductor chips 20 are separated from the adhesive layer 2.

[0057] [6A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum collet or air tweezers to a mounting probe or the like and turned upside down, and then, as shown in Figure 3(a), the terminals 21 of this semiconductor chip 20 and the terminals 41 of the interposer 30 are placed opposite each other via the solder bumps 85 provided on the terminals 41, and the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate) with the surface of the semiconductor chip 20 on which the terminals 21 are formed facing downward.

[0058] [7A] Next, as shown in FIG. 3(b), the interposer 30 and the semiconductor chip 20 are brought close to each other while the solder bumps 85 interposed between the terminals 21 and 41 are heated.

[0059] As a result, the molten solder bump 85 comes into contact with both the terminal 21 and the terminal 41, and by cooling in this state, a connection portion 81 is formed, and as a result, the terminal 21 and the terminal 41 are electrically connected via the connection portion 81 (mounting process; see Figure 3(c)).

[0060] [8A] Next, an underfill material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30, and then the underfill material is hardened to form a sealing layer 80 made of the hardened underfill material (sealing layer forming process; see Figure 3(d)).

[0061] [9A] Next, a molded portion 17 (sealing portion) is formed on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30, thereby sealing the semiconductor chip 20 between the interposer 30 and the molded portion 17, and a bump 70 electrically connected to a part of the terminal 41 through a via provided in the interposer 30 is formed so as to protrude from the underside of the interposer 30 (see Figure 3(e)).

[0062] Here, sealing with the molded portion 17 is performed, for example, by preparing a molding die having an internal space corresponding to the shape of the molded portion 17 to be formed, and filling the internal space with a powdered semiconductor encapsulating material so as to cover the semiconductor chip 20 and interposer 30 arranged in the internal space. Then, in this state, the semiconductor encapsulating material is heated to harden it, resulting in a hardened product of the semiconductor encapsulating material.

[0063] The semiconductor device manufacturing method having the steps described above produces a semiconductor device 10. More specifically, after performing the steps [1A] to [9A], the steps [4A] to [9A] are repeatedly performed, whereby a plurality of semiconductor devices 10 can be manufactured in a batch from one semiconductor substrate 7.

[0064] The adhesive tape 100 of the present invention used in the method for manufacturing such a semiconductor device 10 will be described below.

[0065] <Adhesive Tape 100> 5 is a vertical cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. In the following description, the upper side in FIG. 5 will be referred to as "top" and the lower side as "bottom."

[0066] In the present invention, the adhesive tape 100 is composed of a laminate including a base material 4 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4, and is used to temporarily fix a semiconductor substrate 7 (substrate) and a semiconductor chip 20 (component). The adhesive layer 2 of the adhesive tape 100 contains a base resin having adhesiveness and a curable resin that hardens when energy is applied, and when energy is applied to the adhesive layer 2, the adhesive layer 2 hardens, thereby reducing its adhesive strength. The adhesive tape 100 is prepared by preparing a test piece made of the adhesive layer 2 having a size of 0.5 mm thick x 6 mm wide x 20 mm long before applying energy to the adhesive layer 2, and stretching the test piece in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min. In the displacement-stress curve measured before the application of energy, the breaking elongation W is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3 The following is satisfied:

[0067] Here, in the step [3A], when the semiconductor substrate 7 is diced (cut) in the thickness direction using a dicing saw to separate the semiconductor substrate 7 into multiple semiconductor chips 20, the cutting of the semiconductor substrate 7 is usually carried out until it reaches halfway through the thickness direction of the base material 4 of the adhesive tape 100, as shown in Figure 2(c), in order to ensure that the semiconductor substrate 7 is separated into individual pieces.

[0068] At this time, in the adhesive tape 100, the adhesive layer 2 is located closer to the semiconductor substrate 7 than the base material 4 and is bonded to the semiconductor substrate 7, so naturally, when the semiconductor substrate 7 is cut, it is cut together with the semiconductor substrate 7 by the dicing saw.

[0069] In addition, the dicing saw (blade) used to cut the semiconductor substrate 7 has an overall disk shape with sharp diamond abrasive grains embedded in its tip (the end of the disk).This dicing saw is rotated while in contact with the semiconductor substrate 7 and moved in a grid pattern along the horizontal and vertical directions of the semiconductor substrate 7 when viewed in a plane, so that the adhesive layer 2 is torn apart by the dicing saw together with the semiconductor substrate 7 and cut in its thickness direction.

[0070] In this way, there was a problem that when the adhesive layer 2 was torn apart by the dicing saw, part of the cut adhesive layer 2 would adhere to the side of the semiconductor chip 20, causing glue adhesion, as explained in the background art section above.

[0071] As a result of intensive research by the inventor into this problem, it has become clear that the occurrence of adhesive adhesion on the side surface of the semiconductor chip 20 is related to the breaking elongation W in the displacement-stress curve measured on the adhesive layer 2 before the application of energy, and the amount of work done when the test piece is stretched.

[0072] Furthermore, further investigation by the inventors has revealed that the breaking elongation W and the magnitude of the work load are involved not only in the occurrence of adhesive adhesion on the side of the semiconductor chip 20 in step [3A], but also in the adhesion of the semiconductor substrate 7 to the adhesive tape 100 in step [1A], and the pick-up ability of the semiconductor chip 20 from the adhesive tape 100 in step [5A].

[0073] Further studies by the present inventors have revealed that, as described above, before applying energy to the adhesive layer 2, a test piece of the adhesive layer 2 having a thickness of 0.5 mm, a width of 6 mm and a length of 20 mm is prepared, and the test piece is elongated in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min. In the displacement-stress curve measured when the test piece is elongated, the breaking elongation W is 200% or more and 1000% or less, and the work required for the elongation of the test piece to reach 100% is 300 J / m 3More than 2000J / m 3 The inventors have found that the following three problems can be solved by setting the following dimensions, and have completed the present invention.

[0074] That is, 1. In the step [3A], when semiconductor chips 20 are obtained by cutting the semiconductor substrate 7 in the thickness direction to separate it, the occurrence of glue adhesion in which part of the adhesive layer 2 adheres to the side of the semiconductor chip 20 can be accurately suppressed or prevented. As a result, the reliability of the semiconductor device 10 in which the semiconductor chip 20 is sealed with the molded portion 17 is improved; 2. in the step [1A], when the semiconductor substrate 7 is attached to the adhesive tape 100 with the uneven surface on which the circuit is formed facing the adhesive tape 100, the semiconductor substrate 7 can be reliably attached to the adhesive tape 100 while accurately suppressing or preventing the adhesive layer 2 from unintentionally embedding into the unevenness of this uneven surface; and 3. in the step [5A], when the semiconductor chip 20 is picked up from the adhesive tape 100 by suction using a vacuum collet or air tweezers, it is possible to accurately suppress or prevent the adhesive layer 2 of the adhesive tape 100 from leaving adhesive residue on the back surface of the semiconductor chip 20, and thus the present invention has been completed.

[0075] The substrate 4 and adhesive layer 2 of such an adhesive tape 100 (dicing tape) will be described in detail below.

[0076] <Base material 4> The base material 4 is mainly made of a resin material, has a sheet shape, and has the function of supporting the adhesive layer 2 provided on this base material 4. It also serves to realize the expansion in the expanding step of step [4A] in which the adhesive tape 100 is expanded in the planar direction. Furthermore, it serves to realize the pushing-up by the needles 430 in the pick-up step of step [5A] in which the individualized semiconductor chips 20 are picked up in a state in which they are pushed up by the needles 430.

[0077] Such resin materials are not particularly limited, but examples thereof include thermoplastic resins such as polyolefin resins, polyvinyl chloride resins, polystyrene resins such as polystyrene thermoplastic elastomers, polyester resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, and polyester thermoplastic elastomers, polyurethane, polyimide, polyamide, polyether ketones such as polyether ether ketone, polyether sulfone, fluororesin, silicone resin, cellulose resin, acrylic resin, polyvinyl isoprene, and polycarbonate (carbonate polymer), as well as mixtures of these thermoplastic resins.

[0078] In particular, it is preferable to use polyolefin resin, polyvinyl chloride resin, polystyrene resin, or a mixture thereof as the resin material. By using these resin materials, it is possible to reliably impart extensibility (expandability) to the substrate 4 in the expanding step [4A], and it is also possible to reliably realize the needles 430 pushing up when the individual semiconductor chips 20 are picked up in a pushed-up state by the needles 430 in the step [5A]. Furthermore, it is possible to reliably suppress or prevent contamination of the adhesive tape 100 by cutting waste from the substrate 4 during dicing in the step [3A].

[0079] Such polyolefin resins are not particularly limited, but examples thereof include polyethylene resins such as polypropylene, linear low-density polyethylene, low-density polyethylene, and very low-density polyethylene; polyethylene copolymers such as ethylene-vinyl acetate copolymer (EVA), ethylene-methyl methacrylate copolymer (EMMA), and ethylene-methacrylate copolymer (EMAA); and ionomers such as ethylene-based ionomers crosslinked with zinc ions, sodium ions, or potassium ions; and these may be used alone or in combination of two or more.

[0080] Polyvinyl chloride resins are polymers having multiple repeating units of the group -CH-CHCl-. Specific examples include homopolymers of vinyl chloride, copolymers of vinyl chloride with a copolymerizable vinyl monomer (polymerizable monomer), and post-chlorinated vinyl chloride polymers. While one or a combination of two or more of these can be used, homopolymers are generally used.

[0081] Examples of copolymers of vinyl chloride with copolymerizable vinyl monomers include vinyl chloride-vinyl acetate copolymer, vinyl chloride-ethylene copolymer, and vinyl chloride-acrylic copolymer.

[0082] Furthermore, the polystyrene resin is not particularly limited, but examples thereof include polystyrene, poly(α-methylstyrene), polychlorostyrene, poly(m-propylstyrene), high impact polystyrene (HIPS), acrylonitrile-butadiene-styrene copolymer (ABS), acrylonitrile-styrene copolymer (AS), styrene-methacrylic acid copolymer, styrene-methacrylic acid alkyl ester copolymer, styrene-methacrylic acid glycidyl ester copolymer, styrene-acrylic acid copolymer, styrene-acrylic acid alkyl ester copolymer, styrene-maleic acid copolymer, styrene-fumaric acid copolymer, as well as styrene-butadiene copolymer, styrene-isoprene copolymer, and other styrene-based thermoplastic elastomers, and these may be used alone or in combination of two or more.

[0083] Furthermore, the base material 4 preferably contains a conductive material having electrical conductivity. By including such a conductive material, the conductive material can function as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chips 20 in the singulation step [3A] and the pick-up step [5A].

[0084] In this way, when the substrate 4 contains a conductive material, the surface resistivity of the surface of the substrate 4 opposite to the adhesive layer 2 is 1.0 × 10 13 (Ω / □) or less, and is preferably set to 1.0×10 11 It is more preferable that the resistance be set to Ω / □ or less, which makes it possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chips 20 during the singulation process [3A] and the pick-up process [5A].

[0085] The conductive material is not particularly limited as long as it is conductive, but examples thereof include surfactants, permanently antistatic polymers (IDPs), metal materials, metal oxide materials, and carbon-based materials, and one or more of these may be used in combination.

[0086] Among these surfactants, examples include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

[0087] As the permanently antistatic polymer (IDP), any IDP such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, polyurethane series, etc. can be used.

[0088] Examples of metal materials include gold, silver, copper or silver-coated copper, and nickel, and powders of these metals are preferably used.

[0089] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO2), and zinc oxide (ZnO), and powders of these metal oxides are preferably used.

[0090] Further, examples of carbon-based materials include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0091] Among these, the conductive material is preferably at least one of surfactants, permanently antistatic polymers (IDPs), metal oxide materials, and carbon black. These materials have a small temperature dependency of resistivity, so that even if the base material 4 is heated when dicing the semiconductor substrate 7 in the step [3A], the change in surface resistivity can be reduced.

[0092] In addition, when preventing the generation of static electricity in the semiconductor chip 20 without incorporating a conductive material into the base material 4, an antistatic layer containing a conductive material may be formed on the surface opposite to the adhesive layer 2. This makes it possible to obtain the same effect as when the base material 4 contains a conductive material.

[0093] Furthermore, the substrate 4 may contain a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, or clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizer, a colorant, or the like.

[0094] Furthermore, when the base material 4 contains constituent materials other than the resin material as the main material, the content of the resin material in the base material 4 is preferably 50% by weight or more and 95% by weight or less, and more preferably 65% ​​by weight or more and 90% by weight or less.

[0095] Furthermore, the thickness of the base material 4 is preferably, for example, 70 μm or more and 150 μm or less, and more preferably 80 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the base material 4 can more reliably perform its function, and the dicing of the semiconductor substrate 7 in the step [3A] can be performed with excellent workability. Furthermore, in the step [5A], the semiconductor chips 20 are picked up with the needles 430 pushed up from the individual semiconductor chips 20, and this picking up can be performed with excellent accuracy.

[0096] The substrate 4 may have a functional group, such as a carboxyl group, a hydroxyl group, or an amino group, exposed on its surface, which is reactive with the constituent material contained in the adhesive layer 2.

[0097] The base material 4 may also be configured as a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated.

[0098] <Adhesive layer 2> The adhesive layer 2 adheres to and supports the semiconductor substrate 7 when the semiconductor substrate 7 is diced in the step [3A], and when energy is applied to the adhesive layer 2 in the step [4A], the adhesive layer 2 hardens, so that the semiconductor chips 20 obtained by dicing the semiconductor substrate 7 have enough adhesiveness to be picked up in the step [5A].

[0099] Such adhesive layer 2 is made of a resin composition containing (1) a base resin having adhesive properties and (2) a curable resin that cures the adhesive layer 2 as main materials.

[0100] In the present invention, 1. in the step [3A], the semiconductor substrate 7 is diced with excellent accuracy while preventing adhesive adhesion to the side surfaces of the semiconductor chips 20; 2. in the step [1A], when the semiconductor substrate 7 is attached to the adhesive tape 100, the adhesive layer 2 is prevented from unintentionally embedding into the irregularities of the irregular surface of the semiconductor substrate 7; and 3. in the step [5A], when the semiconductor chip 20 is picked up from the adhesive tape 100, adhesive residue is prevented from being left on the back surface of the semiconductor chip 20. For these purposes, before applying energy to the adhesive layer 2, the fracture elongation W in the displacement-stress curve is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3 The type and content of each component (constituent material) contained in the resin composition that constitutes the adhesive layer 2 are set so as to satisfy the following conditions.

[0101] Each component contained in this resin composition will be described in detail below. (1) Base resin The base resin has adhesiveness and is contained in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 .

[0102] Examples of such base resins include known adhesive layer components such as acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives). Among these, acrylic resins are preferred. By using an acrylic resin as the base resin, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to elongate the test specimen to 100% can be set relatively easily within the above ranges. Furthermore, acrylic resins have excellent heat resistance and are relatively easily and inexpensively available, making them a preferred base resin.

[0103] Acrylic resins are those whose base polymer is a polymer (homopolymer or copolymer) whose main monomer component is (meth)acrylic acid ester.

[0104] The (meth)acrylic acid ester is not particularly limited, but examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and decyl (meth)acrylate. Examples of suitable acrylates include alkyl (meth)acrylates such as methyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate; cycloalkyl (meth)acrylates such as cyclohexyl (meth)acrylate; and aryl (meth)acrylates such as phenyl (meth)acrylate. These acrylates may be used alone or in combination. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate are preferred. Alkyl (meth)acrylates are particularly heat-resistant and can be obtained relatively easily and inexpensively. Furthermore, by including a (meth)acrylic acid alkyl ester as the base resin, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 based on the test piece composed of the adhesive layer 2, and the magnitude of the work required to reach 100% elongation of the test piece can be set within the above range relatively easily.

[0105] In this specification, the term "(meth)acrylic acid ester" is used to include both acrylic acid ester and methacrylic acid ester.

[0106] The acrylic resin used contains a copolymerizable monomer as a structural unit as a monomer component constituting the polymer, as needed, for the purpose of adjusting the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the amount of work required to reach 100% elongation of the test piece, and for the purpose of improving cohesive strength, heat resistance, etc.

[0107] Such copolymerizable monomers are not particularly limited, but examples thereof include hydroxyl group-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy group-containing monomers such as glycidyl (meth)acrylate; carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; and acid-free monomers such as maleic anhydride and itaconic anhydride. hydroxyl group-containing monomers, amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide, amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate, and (meth)acrylonitri olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene; styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene; vinyl ester-based monomers such as vinyl acetate and vinyl propionate; vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether; halogen-atom-containing monomers such as vinyl chloride and vinylidene chloride; alkoxy-group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate; and monomers having a nitrogen atom-containing ring such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These monomers may be used alone or in combination of two or more. Among these, amide-based monomers are preferred.This makes it relatively easy to set the magnitude of the breaking elongation W in the displacement-stress curve of the test piece composed of the adhesive layer 2 before energy is applied to the adhesive layer 2, and the magnitude of the work required to reach 100% elongation of the test piece, within the above range.

[0108] The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on the total monomer components constituting the acrylic resin.

[0109] The copolymerizable monomer may be contained at the terminal of the main chain of the polymer constituting the acrylic resin, or may be contained in the main chain, or may be contained both at the terminal of the main chain and in the main chain.

[0110] Furthermore, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

[0111] Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate, and these can be used alone or in combination of two or more.

[0112] Furthermore, ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as copolymerizable monomer components.

[0113] Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. The polymerization of these monomer components can be carried out using a polymerization method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization.

[0114] The acrylic resin preferably has a low content of low-molecular-weight substances from the viewpoint of preventing contamination of the semiconductor substrate 7 and the like by the acrylic resin when dicing the semiconductor substrate 7 in the step [3A]. In this case, the weight-average molecular weight of the acrylic resin is preferably set to be 300,000 or more and 5,000,000 or less, more preferably 400,000 or more and 4,000,000 or less, and even more preferably 500,000 or more and 1,500,000 or less. Note that, depending on the type of monomer component, if the weight-average molecular weight of the acrylic resin is less than 500,000, the contamination prevention ability for the semiconductor substrate 7 and the like may be reduced, and as a result, adhesive residue may be left behind when the semiconductor chip 20 is peeled off.

[0115] The acrylic resin (base resin) used preferably has a glass transition point of −70° C. or higher and −50° C. or lower, more preferably −65° C. or higher and −55° C. or lower. By using an acrylic resin having a glass transition point within this range as the base resin, it is possible to set the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 based on the test piece made of the adhesive layer 2, and the magnitude of the work required to reach 100% elongation of the test piece, within the above ranges relatively easily.

[0116] The acrylic resin preferably has a functional group (reactive functional group) that is reactive with a crosslinking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). This allows the crosslinking agent or photopolymerization initiator to be linked to the acrylic resin, which is a polymer component, thereby effectively suppressing or preventing leakage of the crosslinking agent or photopolymerization initiator from the adhesive layer 2. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is reliably reduced by the energy ray irradiation in the step [4A].

[0117] (2) Curing resin The curable resin has a curing property such that it is cured by irradiation with energy rays, for example. As a result of this curing, the base resin is incorporated into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 decreases.

[0118] As such a curable resin, for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds as functional groups in the molecule, which are capable of three-dimensional crosslinking by irradiation with energy rays such as ultraviolet rays or electron beams, is used. Specific examples include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, and the like. acrylate, 1,4-butylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, esters of (meth)acrylic acid with polyhydric alcohols such as glycerin di(meth)acrylate, ester acrylate oligomers, cyanurate compounds having a carbon-carbon double bond-containing group such as 2-propenyl-di-3-butenyl cyanurate, tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, 2-hydroxyethyl Examples of suitable compounds include isocyanurate compounds having a carbon-carbon double bond-containing group, such as bis(2-acryloxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, and tris(4-acryloxy-n-butyl)isocyanurate; commercially available oligoester acrylates; aromatic and aliphatic urethane acrylates; and bisphenol A-based epoxy acrylates. These compounds may be used alone or in combination. Among these, at least one of urethane acrylates and bisphenol A-based epoxy acrylates is preferably used.This allows the curable resin to be more reliably cured by applying energy, i.e., by irradiating it with energy rays. Furthermore, based on the test piece made of the adhesive layer 2, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to reach 100% elongation of the test piece can be set within the above ranges relatively easily.

[0119] Furthermore, although the curable resin is not particularly limited, it is preferable that two or more curable resins with different weight-average molecular weights are mixed. By using such a curable resin, the degree of crosslinking of the resin due to energy ray irradiation can be easily controlled. Furthermore, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight-average molecular weight larger than that of the first curable resin may be used.

[0120] When the curable resin is a mixture of a first curable resin and a second curable resin, the weight-average molecular weight of the first curable resin is preferably about 100 to 1,000, and more preferably about 200 to 500. The weight-average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, and even more preferably about 2,000 to 5,000. The number of functional groups in the first curable resin is preferably 1 to 5, and the number of functional groups in the second curable resin is preferably 6 or more. By satisfying this relationship, the above-mentioned effects can be more significantly exhibited.

[0121] The curable resin is preferably blended in an amount of 30 to 200 parts by weight, more preferably 50 to 140 parts by weight, per 100 parts by weight of the base resin, which allows both the curable resin and the base resin to reliably exhibit the functions that are exhibited by adding the curable resin and the base resin to the resin composition.

[0122] When a double-bond-introduced acrylic resin is used as the acrylic resin described above, that is, when one having a carbon-carbon double bond in a side chain, in the main chain, or at the end of the main chain is used, the addition of this curable resin to the resin composition may be omitted. This is because, when the acrylic resin is a double-bond-introduced acrylic resin, the adhesive layer 2 is cured by irradiation with energy rays due to the function of the carbon-carbon double bond contained in the double-bond-introduced acrylic resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

[0123] (3) Photopolymerization initiator Furthermore, the adhesive layer 2 loses adhesion to the semiconductor substrate 7 when irradiated with energy rays. When ultraviolet rays or the like are used as the energy rays, it is preferable that the resin composition constituting the adhesive layer 2 contains a photopolymerization initiator to facilitate the initiation of polymerization of the curable resin.

[0124] Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'- Dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, Dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzil dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone Benzophenone-4-carboxylic acid esters of acrylates such as benzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,Examples include 4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, and 2,4,5-triarylimidazole dimers, and these can be used alone or in combination of two or more.

[0125] The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, and more preferably 0.5 to 10 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the photopolymerization initiator as described above, the photopolymerization initiator can reliably exhibit the function exhibited by adding the photopolymerization initiator to the resin composition.

[0126] (4) Crosslinking agent Furthermore, the resin composition constituting the adhesive layer 2 may contain a crosslinking agent. By containing a crosslinking agent, the adhesive layer 2 can be adjusted to have an appropriate hardness. Therefore, based on the test piece constituted by the adhesive layer 2, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to reach 100% elongation of the test piece can be set within the above ranges relatively easily.

[0127] The crosslinking agent is not particularly limited, but examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, methylol-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl group-containing polymer-based crosslinking agents. Among these, isocyanate-based crosslinking agents are preferred. If an isocyanate-based crosslinking agent is used, the effects obtained by using the crosslinking agent can be more significantly exhibited.

[0128] The isocyanate-based crosslinking agent is not particularly limited, but examples thereof include polyisocyanate compounds of polyvalent isocyanates, trimers of polyisocyanate compounds, trimers of isocyanate-terminated compounds obtained by reacting a polyisocyanate compound with a polyol compound, and blocked polyisocyanate compounds in which isocyanate-terminated urethane prepolymers are blocked with phenol, oximes, or the like.

[0129] Examples of polyisocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, and 2,2,4-trimethyl-hexamethylene diisocyanate. These may be used alone or in combination of two or more. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate is preferred.

[0130] The crosslinking agent is preferably blended in an amount of 0.01 to 30 parts by weight, and more preferably 0.1 to 20 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the crosslinking agent can reliably exhibit the function exhibited by adding the crosslinking agent to the resin composition.

[0131] (5) Plasticizer A plasticizer is preferably contained in the adhesive layer 2, i.e., the resin composition, because it improves the flexibility of the adhesive layer 2, whose adhesive strength decreases when energy is applied, and as a result, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 based on the test specimen made of the adhesive layer 2, and the magnitude of the work required to reach 100% elongation of the test specimen can be relatively easily set within the above range.

[0132] The plasticizer is not particularly limited, but examples thereof include phthalate ester plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), and DHP (diheptyl phthalate), aliphatic dibasic acid ester plasticizers such as DOA (di-2-ethylhexyl adipate), DIDA (diisodecyl adipate), and DOS (di-2-ethylhexyl sebacate), aromatic carboxylic acid ester plasticizers such as ethylene glycol benzoates, trimellitic acid ester plasticizers such as TOTM (trioctyl trimellitate), and adipate ester plasticizers, and these may be used alone or in combination of two or more.

[0133] The content of the plasticizer in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but is preferably 0.1 to 5.0 parts by weight, and more preferably 0.5 to 3.0 parts by weight, per 100 parts by weight of the base resin. This reliably improves the flexibility of the adhesive layer 2. Therefore, based on the test piece made of the adhesive layer 2, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to reach 100% elongation of the test piece can be more easily set within the above ranges.

[0134] (6) Silicone materials Unlike the plasticizers mentioned above, silicone materials harden the adhesive layer 2, the adhesive strength of which decreases when energy is applied. As a result, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 based on the test specimen made of the adhesive layer 2 and the magnitude of the work required to reach 100% elongation can be set within the above ranges relatively easily, and therefore it is preferable that a silicone material be contained in the adhesive layer 2, i.e., in the resin composition.

[0135] A silicone material is a compound composed of a repeating unit of structural units having a siloxane bond (-Si-O-Si-). Specific examples of this repeating unit include those composed of repeating structural units having a siloxane bond of at least one of the following formulas (3) and (4):

[0136] [ka] (In formula (3), X1 represents a hydrocarbon group or a hydroxyl group.)

[0137] [ka] (In formula (4), X2 and X3 each independently represent a hydrocarbon group or a hydroxyl group.)

[0138] Specific examples of the repeating compound in which the structural unit having a siloxane bond is repeated include compounds having a polyorganosiloxane skeleton and compounds having a silsesquioxane skeleton. The silsesquioxane structure may be any structure, such as a random structure, a cage structure, or a ladder structure.

[0139] Examples of hydrocarbon groups include alkyl groups such as a methyl group, an ethyl group, a propyl group, and an isopropyl group; cycloalkyl groups such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group; aryl groups such as a phenyl group, a naphthyl group, and a 2-methylphenyl group; aralkyl groups such as a benzyl group, a diphenylmethyl group, and a naphthylmethyl group; a phenyl group; and a biphenyl group.

[0140] Specifically, the silicone material having such a structure is not particularly limited, but examples thereof include compounds represented by the following formulas (5) and (6).

[0141] [ka] (In formula (5), Me represents a methyl group, and n represents an integer of 1 or more.)

[0142] [ka] (In formula (6), Me represents a methyl group, p represents an integer of 1 or more, and R1, R2, R3, and R4 each independently represent a hydrocarbon group, an organic group, or a hydrogen atom.)

[0143] The content of the silicone material (polydimethylsiloxane) in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but is preferably 0.1 to 2.0 parts by weight, and more preferably 0.2 to 1.0 part by weight, per 100 parts by weight of the base resin. This reliably adjusts the hardness of the adhesive layer 2 to be high, and therefore the amount of work required to reach 100% elongation in the displacement-stress curve of the test specimen made of the adhesive layer 2 before energy is applied to the adhesive layer 2 can be more easily set within the range.

[0144] (7) Other ingredients Furthermore, the resin composition constituting the adhesive layer 2 may contain, in addition to the above-mentioned components (1) to (6), at least one of other components selected from the group consisting of conductive materials, tackifiers, antioxidants, adhesion adjusters, fillers, colorants, flame retardants, softeners, antioxidants, surfactants, etc.

[0145] Among these, the conductive material is not particularly limited as long as it has conductivity, but the same conductive materials as those described as the conductive material contained in the base material 4 can be used.

[0146] By including such a conductive material, the conductive material functions as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chip 20 during the singulation process [3A] and the pick-up process [5A].

[0147] When a conductive material is contained in either the base material 4 or the adhesive layer 2, it is preferable that the conductive material be contained in the base material 4. This makes it possible to more reliably suppress or prevent the generation of static electricity on the semiconductor chip 20 without having to reliably attach a conductive material to the semiconductor chip 20.

[0148] Among these, the tackifier is not particularly limited, but examples thereof include rosin resins, terpene resins, coumarone resins, phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic-aromatic copolymer petroleum resins, and one or more of these may be used in combination.

[0149] As described above, by appropriately selecting the type and content of each of the components (1) to (7) contained in the adhesive layer 2, of which components (1) and (2) are essential components, based on the test piece made of the adhesive layer 2, the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to reach 100% elongation of the test piece can be set within the above ranges.Therefore, the adhesive layer 2 can be made to be able to adhere to and support the semiconductor substrate 7 when dicing the semiconductor substrate 7 in the step [3A], and can also accurately suppress or prevent the occurrence of glue adhesion, whereby a part of the adhesive layer 2 provided in the adhesive tape 100 adheres to the side of the semiconductor chip 20 as the obtained component. Furthermore, in 2. the adhesive layer 2 can be made to be capable of reliably adhering the semiconductor substrate 7 to the adhesive tape 100 in the step [1A], when the semiconductor substrate 7 is adhered to the adhesive tape 100 with the uneven surface on which the circuit is formed facing the adhesive tape 100, while accurately suppressing or preventing the adhesive layer 2 from unintentionally embedding into the unevenness of the uneven surface. Furthermore, in 3. the adhesive layer 2 can be made to be capable of realizing the pickup of the semiconductor chip 20 from the adhesive tape 100 by suction using a vacuum collet or air tweezers after applying energy to the adhesive layer 2 to harden the adhesive layer 2 in the step [5A], and also accurately suppressing or preventing the occurrence of adhesive residue, whereby a portion of the adhesive layer 2 remains on the back surface of the semiconductor chip 20, thereby improving the reliability of the semiconductor device 10 in which the semiconductor chip 20 is sealed with the molded portion 17.

[0150] As described above, before applying energy to the adhesive layer 2, a test piece of the adhesive layer 2 having a thickness of 0.5 mm, a width of 6 mm and a length of 20 mm is prepared, and the test piece is elongated in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 50 mm / min. In the displacement-stress curve measured, the breaking elongation W is 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece is 300 J / m 3 More than 2000J / m 3The breaking elongation W is preferably 200% or more and 800% or less, more preferably 220% or more and 700% or less, and even more preferably 250% or more and 600% or less. The work required to reach an elongation of 100% of the test piece is 350 J / m 3 More than 1900J / m 3 Preferably, it is 450 J / m or less. 3 More than 1800J / m 3 More preferably, it is 550 J / m or less. 3 More than 750J / m 3 It is more preferable that the following holds true: By setting the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work load until the elongation of the test piece reaches 100% within the above ranges, the above-mentioned effects 1 to 3 can be more significantly exhibited.

[0151] In addition, the amount of work required to make the elongation of the test piece reach 100% in the displacement-stress curve can be calculated as the area of ​​the region enclosed by the displacement-stress curve and the X-axis when the displacement (elongation) is plotted on the X-axis and the stress on the Y-axis.

[0152] Furthermore, the stress X at 100% elongation in the displacement-stress curve before application of energy to the adhesive layer 2 is preferably 0.08 MPa or more and 0.35 MPa or less, and more preferably 0.10 MPa or more and 0.30 MPa or less. This allows the adhesive layer 2 to be said to have an appropriate hardness. Therefore, when the semiconductor substrate 7 is diced in the step [3A], the adhesive layer 2, which is cut together with the semiconductor substrate 7, can be scraped off as fine powder. This can more reliably suppress or prevent the occurrence of glue adhesion, in which part of the adhesive layer 2 of the adhesive tape 100 adheres to the side surface of the semiconductor chip 20 as the obtained component.

[0153] As described above, by setting the magnitude of the fracture elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work required to reach 100% elongation of the test piece within the above ranges, the occurrence of adhesive adhesion of the adhesive layer 2 to the side surfaces of the semiconductor chip 20 can be suppressed. The degree of adhesive adhesion is specifically set as follows. That is, a silicon substrate is fixed to the adhesive tape 100, and then, using a 30 μm thick blade, the silicon substrate is cut in the thickness direction to half the thickness of the base material 4 at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s to obtain silicon chips measuring 4 mm long x 4 mm wide. The adhesion rate of the adhesive layer 2 adhering to the side surfaces of the silicon chips due to the cutting is preferably set to 5.0% or less, more preferably 2.0% or less. This can be said to suitably suppress the occurrence of adhesive adhesion on the side surfaces of the semiconductor chips 20 obtained by singulating the semiconductor substrate 7.

[0154] Furthermore, by setting the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work load until the elongation of the test piece reaches 100% within the above ranges, in step [1A], when the semiconductor substrate 7 is attached to the adhesive tape 100 with the uneven surface on which the circuit is formed facing the adhesive tape 100, it is possible to prevent the adhesive layer 2 from unintentionally embedding itself into the unevenness of the uneven surface, and the degree of embedding into the unevenness is specifically set as shown below. That is, a transparent glass substrate having a plurality of square pillar-shaped protrusions (convex stripes) on its surface, each 200 μm high, 400 μm wide, and spaced 1.0 mm apart, is prepared, and adhesive tape 100 is applied to the surface of this transparent glass substrate by pressing a roller 35 mm in diameter and 400 mm wide against the surface at a pressure of 0.5 MPa while the stage is heated to 45°C. Thereafter, the conformability of adhesive tape 100, calculated by dividing the depth of recesses formed by adhesive layer 2 conforming to the protrusions by the height of the protrusions, is preferably 30% or less, and more preferably 10% or less. This can be said to prevent adhesive layer 2 from unintentionally embedding itself in the irregularities of the irregular surface.

[0155] Furthermore, by setting the magnitude of the breaking elongation W in the displacement-stress curve before energy is applied to the adhesive layer 2 and the magnitude of the work load until the elongation of the test piece reaches 100% within the above ranges, when the semiconductor chip 20 is picked up from the adhesive tape 100 by suction using a vacuum collet or air tweezers in step [5A], it is possible to accurately suppress or prevent the occurrence of adhesive residue, in which part of the adhesive layer 2 of the adhesive tape 100 remains on the back surface of the semiconductor chip 20, and the peel strength (peel strength A) of the adhesive tape 100 when this pickup is performed is specifically set as shown below. That is, after applying a 20 mm wide adhesive tape to a #2000 polished silicon wafer with the adhesive layer facing the silicon wafer, applying the energy to the adhesive layer, and then holding one end of the adhesive tape and peeling it at a 30° angle at 25°C at a rate of 1000 mm / min, the peel strength A measured is preferably 30 cN / 20 mm to 300 cN / 20 mm, more preferably 40 cN / 20 mm to 200 cN / 20 mm, and even more preferably 50 cN / 20 mm to 110 cN / 20 mm. By setting the peel strength A within this range, it can be said that the strength is set appropriate for picking up the semiconductor chip 20, and it is possible to accurately suppress or prevent the occurrence of adhesive residue, where a portion of the adhesive layer 2 of the adhesive tape 100 remains on the back surface of the semiconductor chip 20.

[0156] The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm to 15 μm, more preferably 5 μm to 10 μm. By setting the thickness of the adhesive layer 2 within this range, the adhesive layer 2 can exhibit good adhesion to the semiconductor substrate 7 in the singulation step [3A] and function as an adhesive layer with adhesion sufficient to exhibit good peelability between the adhesive layer 2 and the semiconductor substrate 7 in the pickup step [5A]. Furthermore, the effects 1 to 3 described above, which are obtained by setting the magnitude of the fracture elongation W and the magnitude of the work load required to reach 100% elongation in the displacement-stress curve before energy is applied to the adhesive layer 2 based on the test piece made of the adhesive layer 2, within the above ranges, can be more significantly exhibited.

[0157] The adhesive layer 2 may be formed as a laminate (multilayer body) in which a plurality of layers made of different resin compositions are laminated.

[0158] As described above, in the adhesive tape 100 having a configuration in which the adhesive layer 2 is laminated on the substrate 4, when the adhesive tape 100 is viewed in a plan view, bubbles formed at the interface between the substrate 4 and the adhesive layer 2 have an area of ​​100 μm 2 The number of the above is 15.0 pieces / mm 2 It is preferable that the number of particles is 0.01 particles / mm or less. 2 More than 7.0 pieces / mm 2 It is more preferable that the number is 0.1 or less per mm. 2 More than 2.0 pieces / mm 2 It is more preferable that the area is 100 μm or less by controlling the number of bubbles formed at the interface between the substrate 4 and the adhesive layer 2. 2 By setting the number of the above items as described above, it is possible to more accurately suppress or prevent adhesive residue from being left on the semiconductor chip 20 when the semiconductor chip 20 is picked up and the adhesive tape 100 is peeled off from the semiconductor chip 20 in step [5A].

[0159] Next, the adhesive tape 100 having such a configuration can be produced, for example, as follows.

[0160] <Adhesive tape manufacturing method> Fig. 6 is a vertical cross-sectional view for explaining a method for producing the adhesive tape shown in Fig. 5. In the following explanation, the upper side in Fig. 6 will be referred to as "top" and the lower side as "bottom".

[0161] [1B] First, a substrate 4 is prepared (see FIG. 6(a)). The method for producing the substrate 4 is not particularly limited, and examples thereof include common molding methods such as extrusion molding methods such as a calendar method, an inflation extrusion method, and a T-die extrusion method, and a wet casting method. When the substrate 4 is formed as a laminate, molding methods such as a co-extrusion method and a dry lamination method are used as the method for producing the substrate 4 having such a configuration.

[0162] The substrate 4 can be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as required.

[0163] [2B] Next, an adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 6(b)). The surface (upper surface) of the substrate 4 may be subjected to a surface treatment such as corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, primer treatment, or anchor coat treatment in order to improve adhesion between the substrate 4 and the adhesive layer 2.

[0164] The adhesive layer 2 can also be obtained by applying or spraying onto the substrate 4 a liquid material in the form of a varnish, which is made by dissolving the resin composition that is the constituent material of the adhesive layer 2 in a solvent, and then evaporating the solvent.

[0165] The solvent is not particularly limited, but examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethyl formaldehyde, etc., and one or more of these can be used in combination.

[0166] Furthermore, the liquid material can be applied or sprayed onto the substrate 4 using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

[0167] [3B] Next, a portion of the adhesive layer 2 formed on the substrate 4 is removed in a circular shape while leaving the substrate 4 in the thickness direction of the adhesive layer 2 so that the central side and the peripheral side are separated, thereby forming the adhesive layer 2 having a central portion 122 and a peripheral portion 121 (see Figure 6(c)).

[0168] An example of a method for removing a portion of the adhesive layer 2 in a circular shape is to punch out a portion surrounding the area to be removed, and then remove the adhesive layer 2 located in the punched-out area.

[0169] The region to be removed can be punched out using, for example, a method using a roll-shaped mold or a method using a press mold. Among these, the method using a roll-shaped mold, which allows continuous production of the pressure-sensitive adhesive tape 100, is preferred.

[0170] In this step, a part of the adhesive layer 2 is punched out into a ring shape (circular shape) to form the central part 122 and the outer periphery 121, but the shape of the punched part of the adhesive layer 2 may be any shape as long as it is a shape that allows the outer periphery 121 of the adhesive layer 2 to be fixed with a wafer ring in the above-mentioned method for manufacturing a semiconductor device. Specifically, examples of the punched shape include the above-mentioned circular shape, as well as oval shapes such as an ellipse and a bale shape, and polygonal shapes such as a square shape and a pentagon.

[0171] [4B] Next, a separator 1 is laminated on the adhesive layer 2 formed on the substrate 4, thereby obtaining an adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 (see FIG. 6(d)).

[0172] The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and may be, for example, a lamination method using a roll or a lamination method using a press. Among these, the lamination method using a roll is preferred from the viewpoint of productivity, which allows for continuous production.

[0173] The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

[0174] Furthermore, the separator 1 may have its surface subjected to a release treatment so that it is peeled off when the pressure-sensitive adhesive tape 100 is used. Examples of release treatment include coating the surface of the separator 1 with a release agent and providing fine irregularities on the surface of the separator 1. Examples of release agents include silicone-based, alkyd-based, and fluorine-based agents.

[0175] Through the steps described above, the adhesive tape 100 covered with the separator 1 can be formed.

[0176] The adhesive tape 100 covered with the separator 1 manufactured in this embodiment is used after peeling the adhesive tape 100 from the separator 1 in the method for manufacturing a semiconductor device using the adhesive tape 100 described above.

[0177] Furthermore, when peeling the separator 1 from the adhesive layer 2 that it covers, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. By setting the angle at which the separator 1 is peeled within this range, peeling can be reliably prevented at any point other than the interface between the adhesive layer 2 and the separator 1.

[0178] Although the pressure-sensitive adhesive tape of the present invention has been described above, the present invention is not limited thereto.

[0179] For example, any component capable of exerting the same function may be added to each layer of the adhesive tape of the present invention, or the substrate may be composed of a single layer as described in the above embodiment, or may be composed of multiple layers, and for example, the substrate may be provided with an antistatic layer on the surface opposite to the adhesive layer of the above-mentioned substrate.

[0180] Furthermore, the configuration of each layer of the adhesive tape can be replaced with any other layer that can exert the same function, or any other layer can be added.

[0181] Furthermore, depending on the configuration of the semiconductor device formed using the adhesive tape, it may be possible to omit the formation of the molded portion 17 provided in the semiconductor device 10.

[0182] The adhesive tape of the present invention can be applied not only to the case where a semiconductor substrate to which an adhesive tape has been attached is cut in the thickness direction (diced) to obtain cut pieces, i.e., semiconductor chips as components, but also to various substrate processing applications in which components must be obtained by cutting the substrate in the thickness direction while the substrate is temporarily fixed on the adhesive tape, and then peeling the components from the adhesive tape. Substrates to be attached with the adhesive tape of the present invention include, in addition to the semiconductor substrates (semiconductor wafers) described above, glass substrates such as soda-lime glass, borosilicate glass, and quartz glass, ceramic substrates such as alumina, silicon nitride, and titanium oxide, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates. [Example]

[0183] Next, specific examples of the present invention will be described. However, the present invention is not limited to the descriptions in these examples.

[0184] 1. Raw material preparation First, the raw materials used in the production of the pressure-sensitive adhesive tapes of each Example and Comparative Example are shown below.

[0185] (Polyolefin resin 1) As polyolefin resin 1, polypropylene (PP, manufactured by Sumitomo Chemical Co., Ltd., "FS2011DG3") was prepared.

[0186] (Polyolefin resin 2) As polyolefin resin 2, low-density polyethylene (LDPE, manufactured by Sumitomo Chemical Co., Ltd., "Sumikasen F200-0", specific gravity: 0.92 g / cm 3 ) was prepared.

[0187] (Elastomer) As the elastomer, a styrene-based elastomer (manufactured by Asahi Kasei Corporation, "Tuftec H1221") was prepared.

[0188] (Antistatic Agent 1) As antistatic agent 1, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron PVL") was prepared.

[0189] (Base resin 1-4) Base resins 1 to 4 were prepared by mixing at least two of butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, acrylic acid, 2-hydroxyethyl acrylate, N,N-dimethylacrylamide, and vinyl acetate, and then solution polymerizing the mixture in a toluene solvent using a conventional method to produce acrylic copolymers.

[0190] The glass transition points and weight average molecular weights of base resins (acrylic copolymers) 1 to 4 are as follows: Of base resins 1 to 4, base resin 1 is a copolymer having an amide monomer (N,N-dimethylacrylamide) as a structural unit.

[0191] Base resin 1 (glass transition temperature: -14°C, weight average molecular weight: 500,000) Base resin 2 (glass transition temperature: -9°C, weight average molecular weight: 500,000) Base resin 3 (glass transition temperature: -45°C, weight average molecular weight: 650,000) Base resin 4 (glass transition temperature: -37°C, weight average molecular weight: 600,000)

[0192] (curable resin 1) As the curable resin 1, dipentaerythritol hexaacrylate (manufactured by Daicel Allnex Corporation, product number: DPHA), which is an esterification product of (meth)acrylic acid and polyhydric alcohol, was prepared.

[0193] (Curable resin 2) As the curable resin 2, urethane acrylate (manufactured by Miwon Specialty Chemical Co., Ltd., product number: SC2152) was prepared.

[0194] (Curable resin 3) As the curable resin 3, urethane acrylate (product number: UX-5000, manufactured by Nippon Kayaku Co., Ltd.) was prepared.

[0195] (curable resin 4) As the curable resin 4, bis-A type epoxy acrylate (manufactured by Nippon Kayaku Co., Ltd., product number: R-130) was prepared.

[0196] (Crosslinker 1) As a crosslinking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

[0197] (Photopolymerization initiator 1) As a photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

[0198] (Plasticizer 1) As plasticizer 1, a polyester plasticizer (manufactured by DIC Corporation, product number: W-230H) was prepared.

[0199] (oil repellent 1) As oil repellent 1, silicone oil (manufactured by Dow-Toray Industries, Inc., "SF8419") was prepared.

[0200] 2. Preparation of Adhesive Tape [Example 1] A resin composition containing polyolefin resin 1 (45% by weight), elastomer (40% by weight), and antistatic agent 1 (15% by weight) was extruded using an extruder to prepare a substrate 4 having a thickness of 80 μm.

[0201] Next, a liquid material containing a resin composition containing base resin 1 (100 parts by weight), curable resin 2 (30 parts by weight), crosslinker 1 (0.5 parts by weight), oil repellent 1 (0.6 parts by weight), and photopolymerization initiator 1 (7 parts by weight) was prepared. This liquid material was bar-coated onto substrate 4 so that the thickness of adhesive layer 2 after drying would be 10 μm, and then dried at 80°C for 1 minute to form adhesive layer 2 with a thickness of 10 μm on the upper surface (one side) of substrate 4, thereby obtaining adhesive tape 100 of Example 1.

[0202] [Examples 2 to 6, Comparative Examples 1 to 4] The adhesive tapes of Examples 2 to 6 and Comparative Examples 1 to 4 were produced in the same manner as in Example 1, except that the constituent materials contained in the resin composition used to form the substrate 4 and the constituent materials contained in the resin composition used to form the adhesive layer 2 were those shown in Table 1, and the content of each constituent material was changed as shown in Table 1 to form the substrate 4 and adhesive layer 2 with the thickness shown in Table 1.

[0203] 3. Evaluation The resulting pressure-sensitive adhesive tapes of each of the Examples and Comparative Examples were evaluated by the following methods.

[0204] 3-1. Tensile test of adhesive layer For each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, test pieces of the adhesive layer 2 measuring 0.8 mm thick x 6 mm wide x 20 mm long were prepared. Before applying energy to the test pieces, a tensile test was carried out on the test pieces using a precision universal testing machine (Shimadzu Corporation, "Autograph AGS-X") at 25°C with a chuck distance of 10 mm and a tensile speed of 50 mm / min to obtain a displacement-stress curve (SS curve). Then, based on the obtained displacement-stress curve, the work [J / m 3], breaking elongation W [%], and stress X [MPa] when the elongation is 100% were calculated.

[0205] 3-2. Measuring peel strength from silicon wafer Each adhesive tape of the Examples and Comparative Examples, which was 20 mm wide, was attached to the surface of a silicon wafer whose surface had been polished to #2000, and then subjected to ultraviolet ray irradiance of 55 W / cm 2 , UV irradiation amount: 200mj / cm 2 After applying energy by irradiating the adhesive layer 2 with ultraviolet light under the conditions above, the peel strength A (peel strength A) was measured by holding one end of the adhesive tape and peeling it at a speed of 1000 mm / min in a 30° direction in a 25°C environment using a peel analysis device ("VPA-H100" manufactured by Kyowa Interface Science Co., Ltd.).

[0206] 3-3. Evaluation of adhesive residue on the sides of silicon chips <1> A silicon wafer (625 μm thick, manufactured by SUMCO Corporation) made of silicon was prepared as a silicon substrate. Then, the adhesive tape 100 of each example and comparative example was fixed to the surface of the silicon substrate, with the adhesive layer 2 facing the silicon substrate. Then, using a 30 μm thick blade, the silicon substrate was cut in the thickness direction to half the thickness of the base material 4 at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s, to obtain individual silicon chips measuring 6 mm long x 6 mm wide.

[0207] <2> Next, UV irradiance: 55W / cm 2 , UV irradiation amount: 200mj / cm 2 After irradiating the adhesive layer 2 with ultraviolet light from the substrate 4 side under the above conditions, the silicon chip was pushed up using a needle with a needle push-up amount of 600 μm, and then the silicon chip was picked up by suction with a vacuum collet.

[0208] The above process <1> ~ <3> By going through this process, picking up of 50 silicon chips by suction was repeatedly carried out for each adhesive tape of each Example and Comparative Example.

[0209] Then, for each silicon chip obtained in the pressure-sensitive adhesive tape of each Example and Comparative Example, the adhesion rate, which indicates the area where the adhesive layer adhered to the side surface of the picked-up silicon chip, was measured. This adhesion rate measurement was carried out for 50 silicon chips in each pressure-sensitive adhesive tape of each Example and Comparative Example, and the average value was calculated, and then these were evaluated according to the following criteria.

[0210] (Evaluation of adhesive layer adhesion rate) The average adhesion rate of the adhesive layer on the side of 50 silicon chips was ◎: 0.0% (no adhesion) to 2.0% ○: Over 2.0% and 5.0% or less △: Over 5.0% and 10.0% or less ×: Over 10.0%

[0211] 3-4. Evaluation of tracking ability around protrusions A transparent glass substrate was prepared having a plurality of square pillar-shaped protrusions (convex stripes) on its surface, each 200 μm high, 400 μm wide, and with a pitch of 1.0 mm. The adhesive tape 100 of each example and comparative example was attached to the surface of this transparent glass substrate by pressing a roller with a diameter of 35 mm and a width of 400 mm at a pressure of 0.5 MPa while the stage was heated to 45°C.

[0212] Then, the depth of the recess formed in the adhesive tape 100 by the adhesive layer 2 following the protrusion was divided by the height of the protrusion to calculate the conformance rate of the adhesive tape 100, and the conformance of the protrusion to the adhesive tape 100 was evaluated using this conformance rate based on the following evaluation criteria.

[0213] (Evaluation of the adhesive layer's followability) The conformability of the adhesive tape 100 to the protrusion is ◎: Less than 10%. ○: Over 10% and up to 30% △: More than 30% and less than 50% ×: Over 50%

[0214] 3-5. Evaluation of adhesive residue on the backside of silicon chips <1> A silicon wafer (manufactured by SUMCO, 625 μm thick) made of silicon was prepared as a silicon substrate. Then, the adhesive tape of each example and comparative example was fixed to the silicon substrate with the adhesive layer facing the silicon substrate. Then, using a 100 μm thick blade, the silicon substrate was cut in the thickness direction to half the thickness of the base material 4 at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s while supplying cutting water to the silicon substrate, thereby obtaining multiple silicon chips measuring 6 mm long x 6 mm wide.

[0215] <2> Next, this silicon chip was pushed up using a needle with the needle push-up amount set to 600 [μm], and then the silicon chip was picked up by suction with a vacuum collet.

[0216] The above process <1> ~ <2> By going through this process, picking up of 50 silicon chips by suction was repeatedly carried out for each adhesive tape of each Example and Comparative Example.

[0217] Then, for each silicon chip obtained from the adhesive tape of each Example and Comparative Example, the presence or absence of contamination due to adhesion of cutting water on the front (back) surface of the picked-up silicon chip was confirmed. This confirmation of the presence or absence of contamination was carried out on 50 silicon chips for each adhesive tape of each Example and Comparative Example, and they were evaluated according to the following criteria.

[0218] (Evaluation of adhesive layer adhesion rate) The number of silicon chips found to have surface contamination was ◎: 0 pieces 〇: More than 0 and less than 5 △: More than 5 and less than 10 ×: More than 10

[0219] 3-6. Evaluation of pickup properties A silicon wafer (manufactured by SUMCO Corporation) made of silicon was prepared and ground by a conventional method to obtain a silicon wafer with a thickness of 230 μm. After grinding the wafer to a thickness of 200 μm with a #2000 wheel, the adhesive tape 100 of each example and comparative example was fixed to the ground surface with the adhesive layer 2 facing the silicon wafer. Thereafter, using a dicing blade (manufactured by DISCO Corporation, product number: Z05-SD2000-N1-50, thickness: 30 μm), the silicon wafer was cut in the thickness direction until it reached the middle of the substrate 4 at a rotation speed of 40,000 rpm and a processing speed of 60 mm / s, thereby obtaining a plurality of silicon chips each measuring 6 mm long x 6 mm wide. Next, UV irradiance: 55W / cm 2 , UV irradiation amount: 200mj / cm 2 After irradiating the adhesive layer 2 with ultraviolet light from the substrate 4 side under the conditions above, the surface of the diced silicon chip was adsorbed using a vacuum adsorption collet, and four needles spaced 4 mm apart were raised 200 μm from below the substrate 4 to pick up the silicon chip from the adhesive tape.

[0220] The silicon chip pick-up properties of the adhesive tapes of each Example and Comparative Example were checked for the silicon chips picked up in the manner described above, and evaluated according to the following criteria.

[0221] (Pickup evaluation) ◎: 50 out of 50 were successful O: I was able to pick up between 48 and 50 out of 50. △: More than 40 but less than 48 out of 50 were picked. ×: Less than 40 out of 50 were picked up.

[0222] [Table 1]

[0223] As shown in Table 1, in the pressure-sensitive adhesive tape 100 of each example, the breaking elongation W in the displacement-stress curve before energy application was 200% or more and 1000% or less, and the work required for the elongation of the test piece to reach 100% was 300 J / m 3 More than 2000J / m 3 The following conditions were satisfied, and as a result, it was possible to reliably suppress or prevent a part of the adhesive layer of the adhesive tape from adhering to the side or back surface of the obtained silicon chip.

[0224] In contrast, in the pressure-sensitive adhesive tapes of each comparative example, the breaking elongation W in the displacement-stress curve before energy application was 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece was 300 J / m 3 More than 2000J / m 3 The adhesive tape did not satisfy at least one of the following conditions, and as a result, part of the adhesive layer of the adhesive tape adhered to the side or back surface of the obtained silicon chip. [Explanation of symbols]

[0225] 1 Separator 2 Adhesive layer 4 Base material 7. Semiconductor substrate 9 Wafer ring 10 Semiconductor devices 17 Mold section 20 Semiconductor chips 21 terminals 23 Semiconductor chip body 30 Interposer 41 terminals 70 Bump 80 Sealing layer 81 Connection 85 Solder bumps 100 adhesive tape 121 Outer periphery 122 Center 200 Dicer Table 300 tables 310 Center 320 Outer periphery 400 stages 410 Ejector Head 430 Needle

Claims

1. An adhesive tape used for temporarily fixing a semiconductor wafer as a substrate and a component, the adhesive tape comprising: a base material; and an adhesive layer laminated on one surface of the base material; the adhesive tape is used for temporarily fixing a semiconductor wafer as a substrate and a component, the semiconductor wafer being fixed in place; the adhesive tape is then diced into individual pieces to form semiconductor chips as a plurality of components; and the semiconductor chips are then detached from the adhesive layer; the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the adhesive strength of the adhesive layer is reduced by applying energy to the adhesive layer to cure the adhesive layer; A test piece made of the pressure-sensitive adhesive layer having a size of 0.5 mm thick x 6 mm wide x 20 mm long was prepared, and before the application of the energy, the test piece was stretched in the longitudinal direction under conditions of a chuck distance of 10 mm at 25°C and a tensile speed of 50 mm / min. In the displacement-stress curve measured when the test piece was stretched, the breaking elongation W was 200% or more and 1000% or less, and the work required to reach 100% elongation of the test piece was 300 J / m ３ More than 2000J / m ３ An adhesive tape characterized by:

2. 2. The pressure-sensitive adhesive tape according to claim 1, wherein the curable resin is at least one of urethane acrylate and bisphenol A-based epoxy acrylate.

3. 3. The adhesive tape according to claim 1, wherein the base resin is an acrylic resin.

4. The pressure-sensitive adhesive tape according to claim 3 , wherein the acrylic resin is a copolymer having an amide monomer as a structural unit.

5. The adhesive tape according to claim 1 , wherein the adhesive layer further contains a crosslinking agent, and the crosslinking agent is an isocyanate-based crosslinking agent.

6. The adhesive tape according to claim 1 , wherein the adhesive layer further contains a silicone material as an oil repellent.

7. The adhesive tape according to claim 1 , wherein the substrate contains an antistatic agent.

8. 8. The adhesive tape according to claim 1, wherein the adhesive tape is used when a semiconductor wafer is fixed onto the adhesive layer as the substrate, the semiconductor wafer is cut so as to reach partway through the thickness direction of the base material to separate the semiconductor wafer into individual semiconductor chips, and then the adhesive tape is stretched in the length direction while the semiconductor chips are pushed up from the base material side and pulled out from the opposite side of the base material, thereby detaching the semiconductor chips from the adhesive layer.

9. The adhesive tape according to claim 1 , wherein the adhesive layer has a thickness of 5 μm or more and 15 μm or less.

10. 10. The pressure-sensitive adhesive tape according to claim 1, wherein the stress X when the elongation is 100% in the displacement-stress curve is 0.04 MPa or more and 0.4 MPa or less.

11. The adhesive tape according to any one of claims 1 to 10, which satisfies the following requirement A: Requirement A: The adhesive tape has a peel strength A of 30 cN / 20 mm or more and 300 cN / 20 mm or less, as measured when a 20 mm wide adhesive tape is attached to a #2000 polished silicon wafer with the adhesive layer facing the silicon wafer, the energy is applied to the adhesive layer, and then one end of the adhesive tape is held and peeled off at a speed of 1000 mm / min in a direction of 30° at 25°C.

12. The adhesive tape according to claim 1 , which satisfies the following requirement B: Requirement B: When a silicon substrate is fixed to the adhesive tape and then cut into individual pieces using a 30 μm thick blade in the thickness direction until it reaches half the thickness of the base material at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s to obtain silicon chips measuring 4 mm long x 4 mm wide, the adhesion rate of the adhesive layer adhering to the side surface of the silicon chip due to the cutting must be 5.0% or less.

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