Solar cell and manufacturing method thereof

Abstract

The present invention provides a solar cell and a method for producing the same, comprising: a solar cell layer provided on a substrate; and an encapsulation layer provided on the solar cell layer, the encapsulation layer comprising a metal oxide doped with a dopant substance or a metal oxynitride doped with a dopant substance, the metal oxide or metal oxynitride comprising at least one metal selected from the group consisting of W, Nb, and Sn.

Description

[Technical Field]

[0001] The present invention relates to solar cells, and more particularly to encapsulation layers for solar cells. [Background technology]

[0002] Perovskite compounds have the problem of being easily oxidized by moisture, and therefore, in the case of perovskite solar cells in which a perovskite compound is used in the absorber layer of the solar cell, the absorber layer is oxidized by external oxygen or moisture, resulting in a decrease in the efficiency of the solar cell.

[0003] Therefore, an encapsulation layer is required to protect the absorber layer of the solar cell from the penetration of external oxygen and moisture. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been devised to solve the above-mentioned conventional problems, and an object of the present invention is to provide a solar cell having an encapsulation layer that can efficiently protect an absorber layer of the solar cell from penetration of external oxygen and moisture, and a manufacturing method thereof. [Means for solving the problem]

[0005] To achieve the above object, the present invention provides a solar cell comprising a solar cell layer provided on a substrate, and an encapsulation layer provided on the solar cell layer, wherein the encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material, and the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn.

[0006] The encapsulation layer may include a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer formed on the first encapsulation layer and not in contact with the solar cell layer, the metal oxide doped with the dopant material or the metal oxynitride doped with the dopant material being contained in the second encapsulation layer, and the first encapsulation layer may be made of an insulating material.

[0007] The second sealing layer may be made of multiple layers of different materials.

[0008] The dopant material may comprise a material capable of forming an oxide within the metal oxide or metal oxynitride, and the refractive index of the oxide of the dopant material may be lower than the refractive index of the metal oxide or the refractive index of the metal nitride.

[0009] The solar cell layer can include substrate-type solar cells and perovskite solar cells.

[0010] The present invention also provides a solar cell comprising a solar cell layer provided on a substrate and an encapsulation layer provided on the solar cell layer, wherein the solar cell layer comprises a plurality of unit cells connected in series, and the encapsulation layer comprises a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer provided on the first encapsulation layer without contacting the solar cell layer, and the first encapsulation layer and the second encapsulation layer are configured to fill the area between two adjacent unit cells.

[0011] The solar cell layer may include a plurality of first electrodes spaced apart with the first isolation portion sandwiched therebetween, a plurality of perovskite solar cells provided on the plurality of first electrodes and spaced apart with a contact portion and a second isolation portion sandwiched therebetween, and a plurality of second electrodes provided on the plurality of perovskite solar cells and connected to the first electrodes via the contact portion, and the first encapsulation layer and the second encapsulation layer may be provided to fill the inside of the second isolation portion.

[0012] The solar cell layer may include a substrate-type solar cell, a perovskite solar cell provided on the substrate-type solar cell, a first electrode provided on a lower surface of the substrate-type solar cell, a second electrode provided on an upper surface of the perovskite solar cell, and a connecting line connecting the first electrode in one unit cell to the second electrode in another unit cell, and the first encapsulation layer and the second encapsulation layer may be in contact with the connecting line.

[0013] The solar cell layer may include a perovskite solar cell having a contact portion, a buffer layer including a film provided on the perovskite solar cell and having a plurality of holes, and a conductive layer filled in the plurality of holes, a substrate-type solar cell provided on the buffer layer, an electrode provided on the substrate-type solar cell, and a connection line connecting one unit cell to another unit cell in series via the contact portion, and the first encapsulation layer and the second encapsulation layer may be provided to fill the contact portion.

[0014] The device may further include a barrier layer provided between the substrate and the solar cell layer, and the encapsulation layer may be provided to cover an edge region of the barrier layer that is exposed and not covered by the solar cell layer.

[0015] A protective layer may further be provided on the sealing layer.

[0016] The present invention also provides a method for manufacturing a solar cell, comprising the steps of forming a solar cell layer on a substrate, forming an encapsulation layer on the solar cell layer, and forming a protective layer on the encapsulation layer, wherein the encapsulation layer comprises a metal oxide doped with a dopant substance or a metal oxynitride doped with a dopant substance, and the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn.

[0017] The present invention also provides a method for manufacturing a solar cell, comprising the steps of forming a solar cell layer on a substrate, forming an encapsulation layer on one side of a protective layer, and pressurizing and laminating the encapsulation layer and the protective layer on one side of the solar cell layer while bringing the encapsulation layer into contact with the solar cell layer, wherein the encapsulation layer comprises a metal oxynitride doped with a dopant substance or a metal oxynitride doped with a dopant substance, and the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn.

[0018] The encapsulation layer may include a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer formed on the first encapsulation layer and not in contact with the solar cell layer, the metal oxide doped with the dopant material or the metal oxynitride doped with the dopant material being contained in the second encapsulation layer, and the first encapsulation layer may be made of an insulating material.

[0019] The dopant material may comprise a material capable of forming an oxide within the metal oxide or metal oxynitride, and the refractive index of the oxide of the dopant material may be lower than the refractive index of the metal oxide or the metal nitride. [Effects of the Invention]

[0020] According to the present invention as described above, the following effects are obtained.

[0021] According to one embodiment of the present invention, the encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material, and the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn. This prevents a decrease in light transmittance due to the encapsulation layer while efficiently preventing external oxygen and moisture from penetrating into the solar cell.

[0022] According to one embodiment of the present invention, the encapsulation layer includes a first encapsulation layer in contact with the solar cell layer, and a second encapsulation layer provided on the first encapsulation layer without contacting the solar cell layer. The first encapsulation layer and the second encapsulation layer are provided to fill the area between two adjacent unit cells, thereby efficiently preventing external oxygen and moisture from penetrating through the area between the unit cells.

[0023] According to another embodiment of the present invention, the encapsulation layer is not deposited directly on the top surface of the solar cell layer, but is deposited on the top surface of the protective layer and then laminated on the top surface of the solar cell layer. This has the advantage that there is no risk of damage to the solar cell layer during the deposition process of the encapsulation layer, and the deposition process of the encapsulation layer can be performed at a high temperature range, thereby forming an encapsulation layer with a denser film quality. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a schematic cross-sectional view of a solar cell according to an embodiment of the present invention. [Figure 2A] FIG. 2A is a diagram showing a manufacturing process of a solar cell according to an embodiment of the present invention, and relates to a method of manufacturing the solar cell according to FIG. 1 described above. [Figure 2B] FIG. 2B is a diagram showing a manufacturing process of a solar cell according to an embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. 1 described above. [Figure 2C] FIG. 2C is a diagram showing a manufacturing process of a solar cell according to an embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. 1 described above. [Figure 3A] FIG. 3A is a diagram showing the steps of manufacturing a solar cell according to another embodiment of the present invention, which relates to the method of manufacturing the solar cell according to FIG. 1 described above. [Figure 3B] FIG. 3B is a diagram showing the steps of manufacturing a solar cell according to another embodiment of the present invention, which relates to the method of manufacturing the solar cell according to FIG. 1 described above. [Figure 3C] FIG. 3C is a diagram showing the steps of manufacturing a solar cell according to another embodiment of the present invention, which relates to the method of manufacturing the solar cell according to FIG. 1 described above. [Figure 4] 1 is a schematic cross-sectional view of a solar cell according to another embodiment of the present invention. [Figure 5A] FIG. 5A is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. 4 described above. [Figure 5B] FIG. 5B is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 5C] FIG. 5C is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 6A] FIG. 6A is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. 4 described above. [Figure 6B] FIG. 6B is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 6C] FIG. 6C is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 7] 1 is a schematic cross-sectional view of a solar cell according to still another embodiment of the present invention. [Figure 8A] FIG. 8A is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 8B] FIG. 8B is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 8C] FIG. 8C is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 9A] FIG. 9A is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 9B] FIG. 9B is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. [Figure 9C] FIG. 9C is a diagram showing a manufacturing process of a solar cell according to still another embodiment of the present invention, which relates to a method of manufacturing the solar cell according to FIG. DETAILED DESCRIPTION OF THE INVENTION

[0025] The advantages and features of the present invention, as well as methods for achieving them, will become more apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully convey the scope of the invention to those skilled in the art. The present invention is defined only by the claims.

[0026] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for illustrating the embodiments of the present invention are merely examples, and the present invention is not limited to the details shown in the drawings. The same reference numerals refer to the same elements throughout the specification. Furthermore, in describing the present invention, if a detailed description of related prior art is deemed to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When "comprises," "has," "consists of," etc. are used in the present invention, other parts may be added unless "only" is used. When an element is expressed in the singular, the plural is also included unless otherwise explicitly stated.

[0027] When interpreting elements, they are interpreted as including a margin of error unless otherwise expressly stated.

[0028] When describing a positional relationship, for example, when describing the positional relationship of two parts using "above," "on top," "below," or "beside," one or more other parts may be located between the two parts, unless "immediately" or "directly" is used.

[0029] When describing a temporal relationship, for example, when the temporal precedence is described using "after," "following," "next to," or "before," non-consecutive cases can also be included, unless "immediately" or "directly" is used.

[0030] Although terms such as "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical spirit of the present invention.

[0031] The features of the various embodiments of the present invention may be partially or fully combined or combined with each other, and may be technically interlocked and driven in various ways, and each embodiment may be implemented independently of the others or may be implemented together in a linked relationship.

[0032] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0033] FIG. 1 is a schematic cross-sectional view of a solar cell according to an embodiment of the present invention.

[0034] As can be seen from FIG. 1, a solar cell according to one embodiment of the present invention comprises a substrate 100 , a barrier layer 200 , a solar cell layer 300 , an encapsulation layer 400 , and a protective layer 500 .

[0035] The substrate 100 can be made of a rigid or flexible material, for example, glass or plastic.

[0036] The barrier layer 200 is formed on one surface, for example, the upper surface, of the substrate 100. The barrier layer 200 serves to prevent materials contained in the substrate 100 from diffusing into the solar cell layer 300 and also serves to prevent external moisture or oxygen from penetrating into the solar cell layer 300 through the substrate 100. The barrier layer 200 may be formed on the entire upper surface of the substrate 100.

[0037] The barrier layer 200 may be made of an inorganic insulating material such as silicon oxide, silicon nitride, metal oxide such as aluminum, or metal nitride such as aluminum, and may be formed by a thin film deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). The barrier layer 200 may also be omitted.

[0038] The solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200 .

[0039] The solar cell layer 300 comprises a first electrode 301, a first conductive charge transfer layer 302, a light absorbing layer 303, a second conductive charge transfer layer 304, a second electrode 305, a first terminal 306, and a second terminal 307. The combination of the first conductive charge transfer layer 302, the light absorbing layer 303, and the second conductive charge transfer layer 304 constitutes a perovskite solar cell.

[0040] The first electrode 301 is formed on one surface, for example, the upper surface, of the barrier layer 200. The first electrode 301 may be made of a transparent conductive material such as a metal oxide. The first electrodes 301 are spaced apart by a first separator (P1). The first electrodes 301 may not be provided on both ends of the barrier layer 200. That is, the end of the outermost first electrode 301 is located inside the end of the barrier layer 200, thereby blocking electrical connection between the solar cell components and other external components. Since the first electrode 301 is not provided in the first separator (P1), the upper surface of the barrier layer 200 may be exposed.

[0041] The first conductive charge transfer layer 302 is formed on one surface, for example, the upper surface, of the first electrode 301. The first conductive charge transfer layer 302 is formed to fill the first isolation portion (P1), and the lower surface of the first conductive charge transfer layer 302 may contact the upper surface of the barrier layer 200. The plurality of first conductive charge transfer layers 302 may be spaced apart with a contact portion (P2) and a second isolation portion (P3) sandwiched therebetween. The end of the outermost first conductive charge transfer layer 302 may be located more inward than the end of the outermost first electrode 301, thereby exposing the end of the outermost first electrode 301 to the outside.

[0042] The light absorbing layer 303 is formed on one surface, for example, the upper surface, of the first conductive charge transfer layer 302. The plurality of light absorbing layers 303 may be spaced apart with the contact portion (P2) and the second isolation portion (P3) sandwiched therebetween. The outermost light absorbing layer 303 may be patterned to coincide with the outermost first conductive charge transfer layer 302. Therefore, the outermost light absorbing layer 303 may be located more inward than the outermost first electrode 301, thereby exposing the outermost first electrode 301. The light absorbing layer 303 may be made of a perovskite compound known in the art.

[0043] The second conductive charge transfer layer 304 is formed on one surface, for example, the upper surface, of the light absorbing layer 303. The plurality of second conductive charge transfer layers 304 may be spaced apart with the contact portion (P2) and the second isolation portion (P3) sandwiched therebetween. The outermost second conductive charge transfer layer 304 may be patterned to coincide with the outermost light absorbing layer 303. Therefore, the outermost second conductive charge transfer layer 304 may be located more inward than the outermost first electrode 301, thereby exposing the outermost first electrode 301.

[0044] When the first conductive charge transfer layer 302 is an electron transport layer, the second conductive charge transfer layer 304 is a hole transport layer, and when the first conductive charge transfer layer 302 is a hole transport layer, the second conductive charge transfer layer 304 is an electron transport layer.

[0045] The electron transport layer may comprise various N-type organic materials known in the art, such as BCP (Bathocuproine), C60, or PCBM (Phenyl-C61-butyric acid methyl ester), various N-type metal oxides known in the art, such as ZnO, c-TiO2 / mp-TiO2, SnO2, or IZO, and various other N-type organic or inorganic materials known in the art.

[0046] The hole transport layer can be comprised of various P-type organic materials known in the art, such as Spiro-MeO-TAD, Spiro-TTB, polyaniline, polypinol, poly-3,4-ethylenedioxythiophene-polystyrene sulfonate (PEDOT-PSS), or poly-[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3-hexylthiophene-2,5-diyl) (P3HT), etc.; various P-type metal oxides known in the art, such as Ni oxide, Mo oxide, V oxide, W oxide, Cu oxide, etc.; and various other P-type organic or inorganic materials known in the art.

[0047] The second electrode 305 is formed on one surface, for example, the upper surface, of the second conductive charge transfer layer 304. The plurality of second electrodes 305 may be spaced apart with the second separator (P3) interposed therebetween. A unit cell is formed by a stacked structure of the first electrode 301, first conductive charge transfer layer 302, light absorption layer 303, second conductive charge transfer layer 304, and second electrode 305. Here, the second electrode 305 in one unit cell is connected to the first electrode 301 in another adjacent unit cell through the contact portion (P2), thereby connecting a plurality of unit cells in series. The second electrode 305 may be formed of, but is not limited to, a metal material.

[0048] The edge of the outermost second electrode 305 may be patterned to coincide with the edge of the outermost second conductive charge transfer layer 304. Therefore, the edge of the outermost second electrode 305 may be located more inward than the edge of the outermost first electrode 301, thereby exposing the edge of the outermost first electrode 301 to the outside.

[0049] The first terminal 306 may be formed on one side, for example, on the upper surface of the first electrode 301 in the unit cell located at the outermost edge of the left side, and the second terminal 307 may be formed on the other side, for example, on the upper surface of the second electrode 305 in the unit cell located at the outermost edge of the right side.

[0050] For example, the first terminal 306 may function as a (-) terminal of a plurality of unit cells connected in series, and the second terminal 307 may function as a (+) terminal of a plurality of unit cells connected in series.

[0051] The encapsulation layer 400 is formed on one surface, for example, the upper surface, of the solar cell layer 300. The encapsulation layer 400 can prevent external moisture and oxygen from penetrating into the solar cell layer 300. Therefore, the encapsulation layer 400 is formed to cover the entire upper surface of the solar cell layer 300 and also to cover the upper surfaces of both ends of the barrier layer 200 exposed to the outside.

[0052] The encapsulation layer 400 is formed to cover the side surfaces of the unit cells, thereby preventing external moisture and oxygen from penetrating into the unit cells through the side surfaces of the unit cells. Specifically, the encapsulation layer 400 is formed to cover the side surfaces of the outermost unit cells and to fill the interior of the second separation portion (P3) provided in the region between two adjacent unit cells, thereby covering the side surfaces of all unit cells. In addition, the encapsulation layer 400 covers the upper and side surfaces of the exposed first electrode 301 of the outermost unit cell, and also covers the upper and side surfaces of the first terminal 306 and the second terminal 307.

[0053] The encapsulation layer 400 may include a first encapsulation layer 410 and a second encapsulation layer 420. The first encapsulation layer 410 may be formed on the solar cell layer 300 so as to be in contact with the solar cell layer 300, and the second encapsulation layer 420 may be formed on the first encapsulation layer 410 so as not to be in contact with the solar cell layer 300.

[0054] The first encapsulation layer 410 and the second encapsulation layer 420 are formed to cover the side surfaces of the outermost unit cells and fill the inside of the second isolation portion (P3) provided in the region between two adjacent unit cells, cover the exposed top and side surfaces of the first electrode 301 of the outermost unit cell, cover the top and side surfaces of the first terminal 306 and the second terminal 307, and cover the exposed top surface of the barrier layer 200.

[0055] Here, the first encapsulation layer 410 may contact the side and top surfaces of the first electrode 301, the side surfaces of the first conductive charge transfer layer 302, the side surfaces of the light absorption layer 303, the side surfaces of the second conductive charge transfer layer 304, and the second electrode 305 in each of the unit cells, as well as the side and top surfaces of the first terminal 306 and the second terminal 307, and the top surface of the barrier layer 200. The first encapsulation layer 410 may be made of an insulating material such as silicon nitride or silicon oxide to insulate the side surfaces of each unit cell. The first encapsulation layer 410 may be formed by a thin film deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ATOM).

[0056] Since the second encapsulation layer 420 does not contact the solar cell layer 300, even if a conductive material is used, there is no problem of short circuits occurring at the side of each unit cell. Therefore, the material of the second encapsulation layer 420 can be an optimal material that can prevent the penetration of moisture and oxygen.

[0057] The second encapsulation layer 420 may include a metal oxide or a metal oxynitride. The metal oxide may be an oxide of at least one metal selected from the group consisting of W, Nb, and Sn, and the metal oxynitride may be an oxynitride of at least one metal selected from the group consisting of W, Nb, and Sn. For example, the metal oxide may be selected from the group consisting of WO3, NbO, and SnO2. The metal oxynitride may be selected from the group consisting of WOxNy, NbOxNy, and SnOxNy. Each of x and y is greater than 0.

[0058] The second encapsulation layer 420 may include a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material. When the second encapsulation layer 420 further includes a dopant material, the light transmittance can be improved, thereby improving the efficiency of the solar cell. The dopant material may include a material capable of forming an oxide in the metal oxide or metal oxynitride. Preferably, the refractive index of the oxide of the dopant material is lower than the refractive index of the metal oxide or the metal nitride, thereby improving the light transmittance of the second encapsulation layer 420. A low refractive index of a material can reduce reflection and improve the light transmittance. Examples of the dopant material include Si and Al.

[0059] The second encapsulation layer 420 may be made of multiple layers including a first layer 421 and a second layer 422 made of different materials. The second encapsulation layer 420 may be formed by a thin film deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), in which oxygen or ozone plasma treatment may be performed while supplying each source material into the chamber.

[0060] The protective layer 500 is formed on one surface, for example, the upper surface, of the encapsulation layer 400. The protective layer 500 may be formed to cover the entire upper surface of the encapsulation layer 400. The protective layer 500 may be made of glass or plastic.

[0061] 2A to 2C are diagrams showing a manufacturing process of a solar cell according to an embodiment of the present invention, which relate to a method of manufacturing the solar cell according to the above-described Fig. 1. Therefore, repeated description of the same components will be omitted.

[0062] First, as can be seen from FIG. 2A, the barrier layer 200 is formed on one surface, for example, the upper surface, of the substrate 100, and the solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0063] The solar cell layer 300 is formed by first forming a thin film layer for the first electrode 301 on one surface of the barrier layer 200, and then removing predetermined regions of the thin film layer through a laser scribing process to form first separation portions (P1), thereby forming a plurality of the first electrodes 301. Thereafter, a first conductive charge transfer layer 302, a light absorption layer 303, and a second conductive charge transfer layer 304 are sequentially formed on the first electrode 301, and then the first conductive charge transfer layer 302, the light absorption layer 303, and the second conductive charge transfer layer 304 are sequentially formed through a laser scribing process. a predetermined region of the second conductive charge transfer layer 304 is removed to form a contact portion (P2), and then a thin film layer for the second electrode 305 is formed on the second conductive charge transfer layer 304. A predetermined region of the thin film layer is then removed through a laser scribing process to form a second separation portion (P3), thereby forming the second electrode 305 connected to the first electrode 301 through the contact portion (P2), and then a first terminal 306 is formed on the outermost first electrode 301 on one side, and a first terminal 307 is formed on the outermost second electrode 305 on the other side.

[0064] Here, the first conductive charge transfer layer 302, the light absorbing layer 303, and the second conductive charge transfer layer 304 can be formed by a deposition process or a coating process.

[0065] Next, as shown in FIG. 2B, an encapsulation layer 400 including a first encapsulation layer 410 and a second encapsulation layer 420 is formed on one surface, for example, the upper surface, of the solar cell layer 300.

[0066] The specific configurations of the first encapsulation layer 410 and the second encapsulation layer 420 are the same as those shown in FIG. 1, and therefore, a repeated description will be omitted.

[0067] Next, as can be seen from FIG. 2C, a protective layer 500 is formed on one surface, for example, the upper surface, of the sealing layer 400 .

[0068] 3A to 3C are diagrams showing the manufacturing process of a solar cell according to another embodiment of the present invention, which relate to the manufacturing method of the solar cell according to the above-described Fig. 1. Therefore, repeated description of the same components will be omitted.

[0069] First, as can be seen from FIG. 3A, a barrier layer 200 is formed on one surface, for example, the upper surface, of a substrate 100, and a solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0070] The process of FIG. 3A is similar to the process of FIG. 2A described above, so a repeated description will be omitted.

[0071] Next, as can be seen from FIG. 3B, a second sealing layer 420 is formed on one side of the protective layer 500, and a first sealing layer 410 is formed on one side of the second sealing layer 420, thereby forming a sealing layer 400 on one side of the protective layer 500.

[0072] Next, as can be seen in FIG. 3C, the first encapsulation layer 410 is brought into contact with the solar cell layer 300, and the encapsulation layer 400 and the protective layer 500 are pressurized and laminated on the upper surface of the solar cell layer 300 to complete the solar cell as shown in FIG. 1.

[0073] In the method shown in Figures 2A to 2C, the encapsulation layer 400 is directly deposited on the upper surface of the solar cell layer 300. Therefore, in order to prevent damage to the solar cell layer 300 during the deposition process of the encapsulation layer 400, it is preferable to perform the deposition process of the encapsulation layer 400 at a low temperature range of 80 to 150°C.

[0074] In contrast, in the method shown in Figures 3A to 3C, the encapsulation layer 400 is not deposited directly on the upper surface of the solar cell layer 300 but is deposited on the upper surface of the protective layer 500. This has the advantage that there is no risk of damaging the solar cell layer 300 during the deposition process of the encapsulation layer 400, and the deposition process of the encapsulation layer 400 can be performed at a higher temperature range, for example, in the range of 150 to 250°C, thereby forming an encapsulation layer 400 with a denser film quality.

[0075] FIG. 4 is a schematic cross-sectional view of a solar cell according to another embodiment of the present invention.

[0076] As can be seen from FIG. 4, a solar cell according to another embodiment of the present invention comprises a substrate 100 , a barrier layer 200 , a solar cell layer 300 , an encapsulation layer 400 , and a protective layer 500 .

[0077] The substrate 100 and the barrier layer 200 are the same as those described above, so a repeated description will be omitted.

[0078] The solar cell layer 300 includes a substrate-type solar cell 310, a perovskite solar cell 320, a first electrode 301, a second electrode 305, and a connecting line 340.

[0079] The substrate-type solar cell 310 includes a semiconductor substrate 311 , a first semiconductor layer 312 , a second semiconductor layer 313 , a third semiconductor layer 314 , a fourth semiconductor layer 315 , a first transparent electrode layer 316 and a second transparent electrode layer 317 .

[0080] The semiconductor substrate 311 may be an N-type semiconductor wafer. One and other surfaces of the semiconductor substrate 311, specifically the top and bottom surfaces, may be formed with a concave-convex structure. As a result, a plurality of layers stacked on one surface of the semiconductor substrate 311 and a plurality of layers stacked on the other surface of the semiconductor substrate 311 may be stacked with a concave-convex structure corresponding to the concave-convex structure of the semiconductor substrate 311. However, the concave-convex structure may be formed only on one of the one and other surfaces of the semiconductor substrate 311, or the concave-convex structure may not be formed on both the one and other surfaces of the semiconductor substrate 311.

[0081] The first semiconductor layer 312 is formed on one surface, for example, the upper surface, of the semiconductor substrate 311. The first semiconductor layer 312 may be formed by a thin film deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ATOM) and may be an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer. However, in some cases, the first semiconductor layer 312 may be a semiconductor layer doped with a trace amount of dopant, for example, a trace amount of n-type dopant, for example, an amorphous silicon layer doped with a trace amount of n-type dopant.

[0082] The second semiconductor layer 313 is formed on one surface, for example, the upper surface, of the first semiconductor layer 312. The second semiconductor layer 313 is formed through a thin film deposition process and may be made of, for example, an n-type semiconductor layer having the same polarity as the semiconductor substrate 311 or the first semiconductor layer 312. The second semiconductor layer 313 may be made of an n-type amorphous silicon layer.

[0083] The third semiconductor layer 314 is formed on another surface, for example, the bottom surface, of the semiconductor substrate 311. The third semiconductor layer 314 is formed through a thin film deposition process and may be an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer. However, in some cases, the third semiconductor layer 314 may be an amorphous silicon layer doped with a small amount of dopant, for example, a small amount of p-type dopant. Here, the polarity of the dopant doped in the third semiconductor layer 314 is opposite to that of the dopant doped in the first semiconductor layer 312.

[0084] The fourth semiconductor layer 315 is formed on the other surface, for example, the bottom surface, of the third semiconductor layer 314. The fourth semiconductor layer 315 may be formed through a thin film deposition process and may be a semiconductor layer doped with a predetermined dopant. Here, the polarity of the dopant doped in the fourth semiconductor layer 315 is opposite to the polarity of the dopant doped in the second semiconductor layer 313. The fourth semiconductor layer 315 may be a p-type amorphous silicon layer.

[0085] The first transparent electrode layer 316 is formed on one surface, for example, the upper surface, of the second semiconductor layer 313. The first transparent electrode layer 316 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). Here, the first transparent electrode layer 316 can function as a buffer layer between the substrate type solar cell 310 and the perovskite solar cell 320, and a separate buffer layer is not required between the substrate type solar cell 310 and the perovskite solar cell 320. However, although not shown, a separate buffer layer can be added between the substrate type solar cell 310 and the perovskite solar cell 320.

[0086] The second transparent electrode layer 317 is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 315. The second transparent electrode layer 317 may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0087] The perovskite solar cell 320 comprises a first conductive charge transfer layer 302, a light absorbing layer 303, and a second conductive charge transfer layer 304.

[0088] The specific structures of the first conductive charge transfer layer 302, the light absorbing layer 303, and the second conductive charge transfer layer 304 are the same as those described above, and therefore, a repeated description will be omitted.

[0089] The first electrode 301 is formed on the other side, for example, the bottom side, of the second transparent electrode layer 317 of the substrate type solar cell 310, and the second electrode 305 is formed on one side, for example, the top side, of the second conductive charge transfer layer 304 of the perovskite solar cell 320. The first electrode 301 and the second electrode 305 may be formed in a predetermined pattern so that sunlight can enter the solar cell.

[0090] The substrate-type solar cell 310, the perovskite solar cell 320, the first electrode 301, and the second electrode 305 are combined to form a unit cell of the solar cell shown in FIG.

[0091] The connection line 340 serves to connect a plurality of unit cells, each of which is a combination of the substrate-type solar cell 310, the perovskite solar cell 320, the first electrode 301, and the second electrode 305, in series.

[0092] The connecting line 340 electrically connects the first electrode 301 of one unit cell to the second electrode 305 of another adjacent unit cell, so that the connecting line 340 is provided in the region between the adjacent unit cells.

[0093] The encapsulation layer 400 is formed on one surface, for example, the upper surface, of the solar cell layer 300. As in the previous embodiment, the encapsulation layer 400 is formed to cover the entire upper surface of the solar cell layer 300, as well as the upper surface of the barrier layer 200 exposed to the outside.

[0094] The encapsulation layer 400 is formed to cover the side surfaces of the unit cells, thereby preventing external moisture or oxygen from penetrating into the unit cells through the side surfaces of the unit cells. Specifically, the encapsulation layer 400 is formed to cover the side surfaces of the outermost unit cells and to fill the region between two adjacent unit cells, so that the encapsulation layer 400 can be formed to cover the side surfaces of all unit cells.

[0095] Therefore, the encapsulation layer 400 is formed to cover the side surfaces of the substrate-type solar cell 310, specifically, to cover the side surfaces of the semiconductor substrate 311, the first semiconductor layer 312, the second semiconductor layer 313, the third semiconductor layer 314, the fourth semiconductor layer 315, the first transparent electrode layer 316, and the second transparent electrode layer 317. The encapsulation layer 400 is also formed to cover the side surfaces of the perovskite solar cell 320, specifically, to cover the side surfaces of the first conductive charge transfer layer 302, the light absorption layer 303, and the second conductive charge transfer layer 304. The encapsulation layer 400 is also formed to be in contact with the connecting line 340 provided in the region between two adjacent unit cells.

[0096] Although not specifically shown in the drawings, the encapsulation layer 400 may include a first encapsulation layer 410 and a second encapsulation layer 420, as in the previously described embodiment, where the first encapsulation layer 410 is formed on the solar cell layer 300 so as to be in contact with the solar cell layer 300, and the second encapsulation layer 420 is formed on the first encapsulation layer 410 so as not to be in contact with the solar cell layer 300. Each of the first encapsulation layer 410 and the second encapsulation layer 420 is formed to fill the region between two unit cells, and the specific configuration of each is the same as in the previously described embodiment, so repeated description will be omitted.

[0097] The protective layer 500 is formed on one surface, for example, the upper surface, of the encapsulation layer 400. The protective layer 500 may be formed to cover the entire upper surface of the encapsulation layer 400.

[0098] 5A to 5C are diagrams showing the manufacturing process of a solar cell according to another embodiment of the present invention, which relate to the manufacturing method of the solar cell according to the above-mentioned Fig. 4. Therefore, repeated description of the same components will be omitted.

[0099] First, as can be seen from FIG. 5A, a barrier layer 200 is formed on one surface, for example, the upper surface, of a substrate 100, and a solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0100] The solar cell layer 300 may be formed by forming a substrate-type solar cell 310, forming a perovskite solar cell 320 on the substrate-type solar cell 310, forming a first electrode 301 on the lower surface of the substrate-type solar cell 310, forming a second electrode 305 on the upper surface of the perovskite solar cell 320, and connecting the first electrode 301 of one unit cell to the second electrode 305 of another unit cell with a connecting line 340. The solar cell layer 300 thus formed may be stacked on the upper surface of the barrier layer 200.

[0101] The substrate-type solar cell 310 can be formed by, but is not necessarily limited to, the steps of forming a first semiconductor layer 312 on the upper surface of a semiconductor substrate 311, forming a second semiconductor layer 313 on the upper surface of the first semiconductor layer 312, forming a third semiconductor layer 314 on the lower surface of the semiconductor substrate 311, forming a fourth semiconductor layer 315 on the lower surface of the third semiconductor layer 314, forming a first transparent electrode layer 316 on the upper surface of the second semiconductor layer 313, and forming a second transparent electrode layer 317 on the lower surface of the fourth semiconductor layer 315.

[0102] The perovskite solar cell 320 may be formed by sequentially forming a first conductive charge transfer layer 302, a light absorbing layer 303, and a second conductive charge transfer layer 304 on the first transparent electrode layer 316.

[0103] Next, as can be seen from FIG. 5B, an encapsulation layer 400 is formed on one surface of the solar cell layer 300, for example, on the upper surface.

[0104] Next, as can be seen from FIG. 5C, a protective layer 500 is formed on one surface, for example, the upper surface, of the sealing layer 400 .

[0105] 6A to 6C are diagrams showing the manufacturing process of a solar cell according to another embodiment of the present invention, which relate to the manufacturing method of the solar cell according to the above-mentioned Fig. 4. Therefore, repeated description of the same components will be omitted.

[0106] First, as can be seen from FIG. 6A, a barrier layer 200 is formed on one surface, for example, the upper surface, of a substrate 100, and a solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0107] The process of FIG. 6A is similar to the process of FIG. 5A described above, so a repeated description will be omitted.

[0108] Next, as can be seen from Fig. 6B, the encapsulation layer 400 is formed on one surface of the protective layer 500. Although not specifically shown in the figure, similarly to Fig. 3B described above, the encapsulation layer 400 can be formed on one surface of the protective layer 500 by forming a second encapsulation layer 420 on one surface of the protective layer 500 and then forming a first encapsulation layer 410 on one surface of the second encapsulation layer 420.

[0109] Next, as shown in FIG. 6C, the encapsulation layer 400 and the protective layer 500 are pressure-laminated on the upper surface of the solar cell layer 300 while the encapsulation layer 400 is in contact with the solar cell layer 300, thereby completing the solar cell as shown in FIG.

[0110] FIG. 7 is a schematic cross-sectional view of a solar cell according to yet another embodiment of the present invention.

[0111] As can be seen from FIG. 7, a solar cell according to another embodiment of the present invention comprises a substrate 100 , a barrier layer 200 , a solar cell layer 300 , an encapsulation layer 400 , and a protective layer 500 .

[0112] The substrate 100 and the barrier layer 200 are the same as those described above, and therefore, a repeated description will be omitted.

[0113] The solar cell layer 300 includes a perovskite solar cell 320, a buffer layer 330, a substrate-type solar cell 310, an electrode 309, and a connecting line 340.

[0114] The perovskite solar cell 320 comprises a first conductive charge transfer layer 302, a light absorbing layer 303, and a second conductive charge transfer layer 304, which are sequentially formed on the upper surface of the barrier layer 200.

[0115] Here, a separator (P) is formed in the perovskite solar cell 320, and a plurality of unit cells can be separated by the separator (P). In this embodiment, a unit cell can be formed by combining the perovskite solar cell 320, a buffer layer 330, a substrate-type solar cell 310, and an electrode 309.

[0116] The separation portion (P) is formed by removing predetermined regions of the first conductive charge transfer layer 302, the light absorption layer 303, and the second conductive charge transfer layer 304 that constitute the perovskite solar cell 320. The separation portion (P) can be formed through a primary scribing process, particularly a laser scribing process. In the region where the separation portion (P) is formed, the upper surface of the barrier layer 200 is exposed.

[0117] Furthermore, the perovskite solar cell 320 is formed with a contact portion (C).

[0118] The contact portion (C) is spaced apart from the separating portion (P). The contact portion (C) is formed by removing predetermined regions of the light absorption layer 303 and the second conductive charge transfer layer 304. The contact portion (C) connects two adjacent unit cells in series. The contact portion (C) may be formed through a secondary scribing process, particularly a laser scribing process. In the region where the contact portion (C) is formed, the top surface of the first conductive charge transfer layer 302 is exposed.

[0119] The buffer layer 330 is formed between the perovskite solar cell 320 and the substrate-type solar cell 310. That is, the buffer layer 330 is formed on the upper surface of the perovskite solar cell 320 and the lower surface of the substrate-type solar cell 310. The buffer layer 330 is formed individually for each unit cell. The buffer layer 330 is formed so as not to overlap with the contact portion (C), so that the contact portion (C) is exposed without being covered by the buffer layer 330.

[0120] The buffer layer 330 comprises a film 331 and a conductive layer 332 .

[0121] The film 331 has a plurality of holes, and the conductive layer 332 fills the holes. The film 331 may be made of, but is not limited to, an organic polymer compound. The holes may be formed to penetrate the film 331, and the conductive layer 332 may also be formed to penetrate the film 331. Therefore, the conductive layer 332 may be in contact with the top surface of the perovskite solar cell 320, for example, the second conductive charge transfer layer 304, and may also be in contact with the bottom surface of the substrate-type solar cell 310, for example, the fourth semiconductor layer 315. The holes and the conductive layer 332 may have a lattice structure extending horizontally and vertically in a plan view.

[0122] The substrate-type solar cell 310 is formed on one surface, for example, the upper surface, of the buffer layer 320 .

[0123] The substrate type solar cell 310 includes a semiconductor substrate 311, a first semiconductor layer 312, a second semiconductor layer 313, a third semiconductor layer 314, and a fourth semiconductor layer 315. The specific configurations of the first semiconductor layer 312, the second semiconductor layer 313, the third semiconductor layer 314, and the fourth semiconductor layer 315 are the same as those in FIG. 4, and therefore, repeated description will be omitted. Meanwhile, although not shown in the drawing, a first transparent electrode layer 316 may be additionally formed on the upper surface of the second semiconductor layer 313, and a second transparent electrode layer 317 may be additionally formed on the lower surface of the fourth semiconductor layer 315, as in FIG. 4.

[0124] The electrode 309 is formed on one surface, for example, the upper surface, of the substrate-type solar cell 310. The electrode 309 may be formed in a predetermined pattern to allow sunlight to enter the solar cell. In this embodiment, the first conductive charge transfer layer 302 of the perovskite solar cell 320 may function as a lower electrode of a unit cell, and the electrode 309 may function as an upper electrode of the unit cell.

[0125] The connection lines 340 serve to serially connect a plurality of unit cells each including a combination of the perovskite solar cell 320, the buffer layer 330, the substrate-type solar cell 310, and the electrode 309.

[0126] The connecting line 340 electrically connects the first conductive charge transfer layer 302 of one unit cell to the electrode 309 of another adjacent unit cell, so that the connecting line 340 is provided in the region between the adjacent unit cells.

[0127] The encapsulation layer 400 is formed on one surface, for example, the upper surface, of the solar cell layer 300. As in the above-described embodiment, the encapsulation layer 400 is formed to cover the entire upper surface of the solar cell layer 300, and also to cover the upper surface of the barrier layer 200 exposed to the outside.

[0128] The encapsulation layer 400 is formed to cover the side surfaces of the unit cells, thereby preventing external moisture or oxygen from penetrating into the unit cells through the side surfaces of the unit cells. Specifically, the encapsulation layer 400 is formed to cover the side surfaces of the outermost unit cells and to fill the region between two adjacent unit cells, so that the encapsulation layer 400 can be formed to cover the side surfaces of all unit cells.

[0129] Therefore, the encapsulation layer 400 is formed to cover the side surfaces of the substrate-type solar cell 310, specifically, to cover the side surfaces of the semiconductor substrate 311, the first semiconductor layer 312, the second semiconductor layer 313, the third semiconductor layer 314, and the fourth semiconductor layer 315. The encapsulation layer 400 is also formed to cover the side surfaces of the perovskite solar cell 320, specifically, to cover the side surfaces of the first conductive charge transfer layer 302, the light absorption layer 303, and the second conductive charge transfer layer 304. The encapsulation layer 400 is also formed to cover the side surfaces of the buffer layer 320. The encapsulation layer 400 is also formed to contact the connection line 340 provided in the region between two adjacent unit cells. In particular, the encapsulation layer 400 is formed to fill the contact portion (C). The encapsulation layer 400 may also be formed to fill the separation portion (P).

[0130] Although not specifically shown, the encapsulation layer 400 may include a first encapsulation layer 410 and a second encapsulation layer 420, as in the above-described embodiment, where the first encapsulation layer 410 is formed on the solar cell layer 300 so as to be in contact with the solar cell layer 300, and the second encapsulation layer 420 is formed on the first encapsulation layer 410 so as not to be in contact with the solar cell layer 300. Each of the first encapsulation layer 410 and the second encapsulation layer 420 is formed to fill the region between two unit cells, and the specific configuration of each is the same as in the above-described embodiment, so repeated description will be omitted.

[0131] The protective layer 500 is formed on one surface, for example, the upper surface, of the encapsulation layer 400. The protective layer 500 may be formed to cover the entire upper surface of the encapsulation layer 400.

[0132] 8A to 8C are diagrams showing the manufacturing process of a solar cell according to another embodiment of the present invention, which relate to the manufacturing method of the solar cell according to the above-mentioned Fig. 7. Therefore, repeated description of the same components will be omitted.

[0133] First, as can be seen from FIG. 8A, a barrier layer 200 is formed on one surface, for example, the upper surface, of a substrate 100, and a solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0134] The solar cell layer 300 may be formed by the following processes: forming a perovskite solar cell 320, forming a buffer layer 330 on the perovskite solar cell 320, forming a substrate-type solar cell 310 on the buffer layer 330, forming an electrode 309 on the substrate-type solar cell 310, and connecting the electrode 309 of one unit cell different from the first conductive charge transfer layer 302 of one unit cell to a connection line 340.

[0135] The perovskite solar cell 320 may be formed by sequentially forming a first conductive charge transfer layer 302, a light absorbing layer 303, and a second conductive charge transfer layer 304 on the barrier layer 200, forming a separation portion (P) through a primary scribing process, and forming a contact portion (C) through a secondary scribing process.

[0136] The buffer layer 330 may be formed by forming a film 331 having a plurality of holes on the perovskite solar cell 320 and filling the holes with a conductive layer 332.

[0137] The substrate-type solar cell 310 may be formed through a process of forming a first semiconductor layer 312 on the upper surface of a semiconductor substrate 311, forming a second semiconductor layer 313 on the upper surface of the first semiconductor layer 312, forming a third semiconductor layer 314 on the lower surface of the semiconductor substrate 311, and forming a fourth semiconductor layer 315 on the lower surface of the third semiconductor layer 314, and the formed substrate-type solar cell 310 may be stacked on the buffer layer 330.

[0138] Next, as can be seen from FIG. 8B, an encapsulation layer 400 is formed on one surface of the solar cell layer 300, for example, on the upper surface.

[0139] Next, as can be seen from FIG. 8C, a protective layer 500 is formed on one surface, for example, the upper surface, of the sealing layer 400 .

[0140] 9A to 9C are diagrams showing the manufacturing process of a solar cell according to another embodiment of the present invention, which relate to the manufacturing method of the solar cell according to the above-mentioned Fig. 7. Therefore, repeated description of the same components will be omitted.

[0141] First, as can be seen from FIG. 9A, a barrier layer 200 is formed on one surface, for example, the upper surface, of a substrate 100, and a solar cell layer 300 is formed on one surface, for example, the upper surface, of the barrier layer 200.

[0142] The process of FIG. 9A is similar to the process of FIG. 8A described above, so a repeated description will be omitted.

[0143] Next, as can be seen from Fig. 9B, the encapsulation layer 400 is formed on one surface of the protective layer 500. Although not specifically shown in the figure, similarly to Fig. 3B described above, the encapsulation layer 400 can be formed on one surface of the protective layer 500 by forming a second encapsulation layer 420 on one surface of the protective layer 500 and then forming a first encapsulation layer 410 on one surface of the second encapsulation layer 420.

[0144] Next, as can be seen from FIG. 9C, the encapsulation layer 400 and the protective layer 500 are pressure-laminated on the upper surface of the solar cell layer 300 while the encapsulation layer 400 is in contact with the solar cell layer 300, thereby completing the solar cell as shown in FIG. 4.

[0145] Although the present invention has been described in detail above with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments and can be embodied in various modifications without departing from the spirit and scope of the present invention. Therefore, the disclosed embodiments are intended to illustrate, rather than limit, the spirit and scope of the present invention. Therefore, the above-described embodiments should be understood to be illustrative in all respects and not restrictive. The scope of the present invention should be interpreted by the scope of the claims, and all technical concepts within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

Claims

1. A solar cell layer provided on a substrate, the solar cell layer includes a first electrode, a light absorbing layer on the first electrode, a second electrode on the light absorbing layer, a first terminal on the first electrode, and a second terminal on the second electrode; a solar cell layer, and a sealing layer provided on the solar cell layer; the encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material; the metal oxide or the metal oxynitride contains at least one metal selected from the group consisting of W, Nb, and Sn; the sealing layer covers an exposed upper surface and a side surface of the first electrode, an upper surface and a side surface of the first terminal, and an upper surface and a side surface of the second terminal; the encapsulation layer includes a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer formed on the first encapsulation layer and not in contact with the solar cell layer; the metal oxide doped with the dopant material or the metal oxynitride doped with the dopant material is contained in the second sealing layer, and the first sealing layer is made of an insulating material; Solar cell.

2. The solar cell of claim 1 , wherein the second encapsulation layer is made of multiple layers of different materials.

3. the dopant material comprises a material capable of forming an oxide within the metal oxide or metal oxynitride; The solar cell according to claim 1 , wherein the refractive index of the oxide of the dopant material is lower than the refractive index of the metal oxide or the refractive index of the metal oxynitride.

4. The solar cell of claim 1 , wherein the solar cell layer comprises a substrate-type solar cell and a perovskite solar cell.

5. A solar cell layer provided on a substrate, the solar cell layer includes a first electrode, a light absorbing layer on the first electrode, a second electrode on the light absorbing layer, a first terminal on the first electrode, and a second terminal on the second electrode; a solar cell layer, and a sealing layer provided on the solar cell layer; the solar cell layer includes a plurality of unit cells connected in series, a first unit cell located at a first outermost portion includes the first terminal on the first electrode, and a second unit cell located at a second outermost portion includes the second terminal on the second electrode; the encapsulation layer includes a first encapsulation layer in contact with the solar cell layer, and a second encapsulation layer provided on the first encapsulation layer without contacting the solar cell layer; the first sealing layer and the second sealing layer are provided so as to fill a region between two adjacent unit cells; The encapsulation layer covers the exposed upper and side surfaces of the first electrode, the upper and side surfaces of the first terminal, and the upper and side surfaces of the second terminal.

6. the solar cell layer includes a plurality of the first electrodes spaced apart with a first separator sandwiched therebetween, a plurality of perovskite solar cells provided on the plurality of first electrodes and spaced apart with a contact portion and a second separator sandwiched therebetween, and a plurality of the second electrodes provided on the plurality of perovskite solar cells and connected to the first electrodes via the contact portion, The solar cell according to claim 5 , wherein the first encapsulation layer and the second encapsulation layer are provided to fill the inside of the second isolation portion.

7. the solar cell layer includes a substrate-type solar cell, a perovskite solar cell provided on the substrate-type solar cell, the first electrode provided on a lower surface of the substrate-type solar cell, the second electrode provided on an upper surface of the perovskite solar cell, and a connection line connecting the first electrode in one unit cell and the second electrode in another unit cell, the second electrode being different from the first electrode in one unit cell; The solar cell according to claim 5 , wherein the encapsulation layer contacts the connecting line.

8. the solar cell layer includes a perovskite solar cell having a contact portion, a buffer layer provided on the perovskite solar cell and including a film having a plurality of holes and a conductive layer filled in the plurality of holes, a substrate-type solar cell provided on the buffer layer, an electrode provided on the substrate-type solar cell, and a connection line connecting one unit cell to another unit cell in series via the contact portion, The solar cell according to claim 5 , wherein the first encapsulation layer and the second encapsulation layer are provided to fill the contact portion.

9. The solar cell further includes a barrier layer disposed between the substrate and the solar cell layer. The solar cell according to claim 1 , wherein the encapsulation layer is provided to cover an edge region of the barrier layer that is exposed and not covered by the solar cell layer.

10. The solar cell further includes a barrier layer disposed between the substrate and the solar cell layer. The solar cell according to claim 5 , wherein the encapsulation layer is provided to cover an edge region of the barrier layer that is exposed and not covered by the solar cell layer.

11. The solar cell of claim 1 , further comprising a protective layer on the encapsulation layer.

12. The solar cell according to claim 5 , further comprising a protective layer on the encapsulation layer.

13. forming a solar cell layer on a substrate, the solar cell layer includes a first electrode, a light absorbing layer on the first electrode, a second electrode on the light absorbing layer, a first terminal on the first electrode, and a second terminal on the second electrode; forming a solar cell layer; forming an encapsulation layer on the solar cell layer; and forming a protective layer on the sealing layer; the encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material; the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn; the sealing layer covers an exposed upper surface and a side surface of the first electrode, an upper surface and a side surface of the first terminal, and an upper surface and a side surface of the second terminal; the encapsulation layer includes a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer formed on the first encapsulation layer and not in contact with the solar cell layer; the metal oxide doped with the dopant material or the metal oxynitride doped with the dopant material is contained in the second sealing layer, and the first sealing layer is made of an insulating material; How solar cells are manufactured.

14. forming a solar cell layer on a substrate, the solar cell layer includes a first electrode, a light absorbing layer on the first electrode, a second electrode on the light absorbing layer, a first terminal on the first electrode, and a second terminal on the second electrode; forming a solar cell layer; forming a sealing layer on one side of the protective layer; and a step of pressurizing and laminating the sealing layer and the protective layer on one side of the solar cell layer while bringing the sealing layer into contact with the solar cell layer, the encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material; the metal oxide or metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn; the sealing layer covers an exposed upper surface and a side surface of the first electrode, an upper surface and a side surface of the first terminal, and an upper surface and a side surface of the second terminal; the encapsulation layer includes a first encapsulation layer in contact with the solar cell layer and a second encapsulation layer formed on the first encapsulation layer and not in contact with the solar cell layer; the metal oxide doped with the dopant material or the metal oxynitride doped with the dopant material is contained in the second sealing layer, and the first sealing layer is made of an insulating material; How solar cells are manufactured.

15. the dopant material comprises a material capable of forming an oxide within the metal oxide or metal oxynitride; 14. The method for producing a solar cell according to claim 13, wherein the refractive index of the oxide of the dopant material is lower than the refractive index of the metal oxide or the refractive index of the metal oxynitride.

16. the dopant material comprises a material capable of forming an oxide within the metal oxide or metal oxynitride; 15. The method for producing a solar cell according to claim 14, wherein the refractive index of the oxide of the dopant material is lower than the refractive index of the metal oxide or the refractive index of the metal oxynitride.

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