Onium salt, chemically amplified resist composition and pattern forming method

JP7775797B2Active Publication Date: 2025-11-26SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
JP2022129450
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-08-16
Publication Date
2025-11-26
Estimated Expiration
2042-08-16

AI Technical Summary

Technical Problem

Conventional sulfonium salt-type photoacid generators in resist compositions fail to sufficiently suppress acid diffusion, leading to deterioration of lithography performance such as contrast, mask error factor (MEF), and line width roughness (LWR), and cause pattern collapse during fine pattern formation.

Method used

Development of onium salts with specific structures as photoacid generators in chemically amplified resist compositions, which exhibit excellent solvent solubility, high sensitivity, and high contrast, effectively suppressing acid diffusion and pattern collapse.

Benefits of technology

The onium salt-based resist compositions achieve high-resolution patterns with improved lithography performance, including exposure latitude (EL), LWR, and suppressed pattern collapse, suitable for photolithography using high-energy rays like KrF excimer laser light, ArF excimer laser light, electron beam (EB), and EUV.

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Abstract

To provide an onium salt for use in a chemically amplified resist composition, featuring superior solvent solubility, high sensitivity, high contrast, and superior lithographic performance such as exposure tolerance and line width roughness in photolithography with high energy rays, chemically amplified resist composition including the onium salt as a photoacid generator, and a patterning method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by the formula (1).SELECTED DRAWING: None
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Citation Information

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  • Onium salt, chemically amplified resist composition, and pattern forming process

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