Capacitance-Controlled Voltage Contrast Inspection in Charged Particle Beam Systems and Methods

The method of incremental charging and image analysis in charged particle beam systems addresses the limitations of conventional techniques by enhancing defect detection sensitivity and classification accuracy in complex integrated circuits, improving defect capture rates and throughput.

KR1020260139802APending Publication Date: 2026-09-22ASML NETHERLANDS BV
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Patent Information

Application Number
KR1020267028448
Authority / Receiving Office
KR · KR
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-01-29
Filing Date
2025-01-06
Publication Date
2026-09-22

AI Technical Summary

Technical Problem

Conventional voltage contrast inspection techniques in charged particle beam systems struggle with low defect sensitivity, particularly in detecting high-resistance defects, and lack accuracy in defect type classification, impacting defect capture rates and inspection throughput in complex integrated circuit structures.

Method used

A method involving incremental charging of a sample region with charged particles, forming inspection images under varying capacitance conditions, and analyzing gray level values to detect and classify defects, using a charged particle beam device with a controller to acquire and process images.

Benefits of technology

Enhances defect detection sensitivity and classification accuracy, enabling efficient identification of defects in stacked or laminated structures, improving defect capture rates and throughput in integrated circuit manufacturing.

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Abstract

Systems and methods (400; 700) for detecting defects (638) in a sample (250) using a charged particle beam device are disclosed. A method (400; 700) for inspecting a sample (250) using a charged particle beam device comprises the steps of: causing a region of the sample (250) including a plurality of features (632) to be charged to a first polarity; causing the region to be switched from the first polarity to a second polarity under a switching condition—the switching condition includes the switching capacity of primary charged particles—; forming an inspection image of the region from signal charged particles generated upon interaction between the plurality of features (632) and the switching capacity of primary charged particles; and determining whether there is a defect in the feature (632) of the plurality of features (632) based on the gray level value of the feature (632) in the inspection image.
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