Integrated chip and method of forming the same

Abstract

An integrated chip including a first conductive interconnect, a dielectric structure, and a trench capacitor. The first conductive interconnect is over a semiconductor substrate. The dielectric structure includes a plurality of dielectric layers over the first conductive interconnect. The trench capacitor is over the dielectric structure and extends between sidewalls of the dielectric structure to the first conductive interconnect. The trench capacitor includes a bottom electrode layer, a top electrode layer over the bottom electrode layer, and a first insulator layer between the bottom electrode layer and the top electrode layer. A lower surface of the first insulator layer is between the sidewalls of the dielectric structure and spaced over an upper surface of the first conductive interconnect. The bottom electrode layer includes a first metal compound which extends from the lower surface of the first insulator layer to the upper surface of the first conductive interconnect.