Improved side inject nozzle design for processing chamber

Abstract

This invention provides an apparatus and method for improving gas distribution during heat treatment. One embodiment of this invention provides an apparatus for processing a substrate, the apparatus comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate support surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly includes a gas inlet pointing in a direction tangential to an edge of the substrate support surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are offset relative to each other at an angle of approximately 90°, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body intersect by being coplanar.

Description

Technical Field

[0001] This case generally relates to semiconductor processing tools, and more specifically to reactors for improving airflow distribution. Prior Technology

[0002] Processing semiconductor substrates is used in a variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves growing an oxide layer on the upper surface of the substrate within a processing chamber. The oxide layer can be deposited by exposing the substrate to oxygen or hydrogen gas while heating it using a radiant heat source. Oxygen free radicals bombard the surface of the substrate to form a layer (e.g., a silicon dioxide layer) on the silicon substrate.

[0003] Current processing chambers for radical oxygen growth suffer from limited growth control, resulting in poor processing uniformity. For example, the low processing chamber pressure requirements for radial oxygen growth and current gas inlet designs cause gas to reach the substrate at high speeds. This high gas velocity causes bombardment of the substrate and prevents the gas from being adequately heated at the substrate edges. On the other hand, the oxygen radicals generated during combustion rapidly recombine, leading to short oxygen radical lifetimes. Therefore, the limited growth control resulting from the combination of high-speed gas and short-life oxygen radicals leads to faster growth at the center of the substrate and poor growth at the substrate edges.

[0004] Therefore, there is a need for improved airflow distribution to provide a more uniform film throughout the substrate (i.e., from the center to the edge), and for growth control of thin film growth. Summary of the Invention

[0005] This invention provides apparatus and method for improving gas distribution during heat treatment. One embodiment of this invention provides an apparatus for processing a substrate, the apparatus comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate support surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly includes a gas inlet pointing in a direction tangential to an edge of the substrate support surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are offset relative to each other at an angle of approximately 90°, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body intersect by being coplanar.

[0006] Another embodiment of this invention provides an apparatus for processing a substrate, the apparatus comprising a base ring having sidewalls defining a processing volume, wherein the base ring has an inlet and an outlet formed through the sidewalls, the inlet and the outlet being formed on opposite sides of the base ring; a substrate support disposed in the processing volume, wherein the substrate support has a substrate support surface, a heat source positioned to provide heat energy to the processing volume, an exhaust assembly coupled to an outlet of the base ring, and a side gas assembly coupled to a side hole of the base ring, wherein the side gas assembly includes a gas inlet pointing tangentially to the substrate support surface, and the side hole, the inlet and the outlet of the base ring are substantially disposed at the same height.

[0007] Another embodiment of this invention provides a method for processing a substrate, the method comprising providing a processing chamber defining a processing volume, wherein the processing chamber has an inlet and an outlet formed on opposite sides of the processing chamber, positioning the substrate in the processing volume, providing a first airflow from the inlet to the outlet, evacuating the processing volume using an exhaust assembly coupled to the outlet, and providing a second airflow from a side hole of the processing chamber in a direction tangential to the edge of the substrate such that a majority of the second gas flows along a flow path toward the outlet. Simple Explanation of the Diagram

[0008] The detailed features of this case, briefly outlined above, can be understood in a more detailed manner, and a more specific description of this case can be obtained by referring to the embodiments described herein, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate typical embodiments of this case and should not be considered as a limitation on the scope of this case, as other equivalent and effective embodiments are permissible.

[0009] Figure 1A is a schematic cross-sectional representation of a heat treatment chamber that can be used to implement this case.

[0010] Figure 1B is a schematic cross-sectional top view of a heat treatment chamber according to one embodiment of the present invention.

[0011] Figure 2A is a schematic cross-sectional top view of a side injection assembly with an angled gas tube according to an embodiment of the present invention.

[0012] Figure 2B is a schematic cross-sectional top view of a side injection assembly with an angled gas tube according to another embodiment of the present invention.

[0013] Figure 3 is a schematic cross-sectional top view of a side-injection assembly with a split gas tube according to an embodiment of this case.

[0014] For ease of understanding, the same element symbols are used to designate common elements in the accompanying drawings whenever possible. It is understood that elements disclosed in one embodiment may be beneficially applied in other embodiments without specific description. Implementation

[0015] Figure 1A is a schematic cross-sectional view of a heat treatment chamber 100 that can be used to implement the present invention. The heat treatment chamber 100 generally includes a lamp assembly 110, a chamber assembly 130 defining a processing volume 139, and a substrate support 138 disposed within the processing volume 139. The processing chamber 100 provides a controlled thermal cycle for heating the substrate 101 for processes such as thermal annealing, thermal cleaning, thermochemical vapor deposition, thermal oxidation, and thermal nitriding.

[0016] The lamp assembly 110 may be positioned above the substrate support 138 to heat the processing volume 139 via a quartz window 114. The quartz window 114 is disposed between the substrate 101 and the lamp assembly 110. In some embodiments, the lamp assembly 110 may additionally or alternatively be positioned below the substrate support 138. It should be noted that the terms "above" or "below" used herein do not refer to an absolute direction. The lamp assembly 110 is configured to house a heat source 108, such as a plurality of halogen tungsten lamps, to provide a customized infrared heating element to the substrate 101 disposed on the substrate support 138. The plurality of halogen tungsten lamps may be arranged in a hexagonal pattern. The heat source 108 may be connected to a controller 107 that controls the energy level of the heat source 108 to achieve a uniform or customized heating distribution on the substrate 101. In one embodiment, the heat source 108 is capable of rapidly heating the substrate 101 at a rate from about 50°C / s to about 280°C / s.

[0017] The substrate 101 can be heated to a temperature varying from about 550 degrees Celsius to less than 700 degrees Celsius. The heat source 108 can provide zoned heating (temperature tuning) of the substrate 101. Temperature tuning can be performed to change the temperature of the substrate 101 at a specific location without affecting the temperature of the rest of the substrate. In one embodiment, the center of the substrate 101 is heated to a temperature between about 10 and 50 degrees Celsius above the temperature of the edges of the substrate 101.

[0018] A slit valve 137 may be mounted on the base ring 140 of the robotic arm to transfer substrate 101 into and out of processing volume 139. Substrate 101 may be placed on substrate support 138, which may be configured to move vertically and rotate about a central axis 123. A gas inlet 131 may be located above the base ring 140 and connected to a gas source 135 to provide one or more processing gases to processing volume 139. A gas outlet 134 formed on the opposite side of the base ring 140 from gas inlet 131 is matched to an exhaust assembly 124 in fluid communication with a pump / pump system 136. The exhaust assembly 124 defines an exhaust volume 125, which is in fluid communication with processing volume 139 via gas outlet 134.

[0019] In one embodiment, one or more side holes 122 may be formed above the base ring 140 between the gas inlet 131 and the gas outlet 134. The side holes 122, the gas inlet 131, and the gas outlet 134 may be positioned at substantially the same horizontal plane or height. In other words, the side holes 122, the gas inlet 131, and the gas outlet 134 may intersect by being coplanar. As will be discussed in more detail below, the side holes 122 are connected to a side gas source configured to improve the uniformity of gas distribution near the edge region of the substrate 101.

[0020] Figure 1B is a schematic cross-sectional top view of a heat treatment chamber 100 according to an embodiment of the present invention. As shown in Figure 1B, a gas inlet 131 and a gas outlet 134 are disposed on opposite sides of the processing volume 139. Both the gas inlet 131 and the gas outlet 134 may have a linear or directional width approximately equal to the diameter of the substrate support 138.

[0021] In one embodiment, gas source 135 may include multiple gas sources, such as a first gas source 141 and a second gas source 142, each configured to provide processing gas. During operation, the processing gases from the first gas source 141 and the second gas source 142 may be mixed and blended together before entering the cartridge 149 disposed on the inlet 131. Alternatively, the processing gas from the second gas source 142 may be introduced into the cartridge 149 after the processing gas from the first gas source 141 has been introduced into the cartridge 149. The first gas source 141 can provide a gas with low thermal conductivity, thereby controlling the combustion reaction.

[0022] In one embodiment, a first gas source 141 provides an oxygen-containing gas, such as oxygen, and a second gas source 142 provides a hydrogen-containing gas, such as hydrogen. The second gas source 142 may also provide oxygen, nitrogen, or a mixture or blend of the above. The gas from the first gas source 141 may be heated to a first temperature before entering the injection barrel 149. The first temperature may be approximately 300°C to approximately 650°C, for example, approximately 550°C. The gas from the second gas source 142 may be provided to the injection barrel 149 at room temperature. Alternatively, both the gas from the first gas source 141 and the gas from the second gas source 142 may be provided to the injection barrel 149 at room temperature.

[0023] In one embodiment, the injection barrel 149 has an elongated channel 150 formed therein and two inlets 143, 144 formed at opposite ends of the elongated channel 150. A plurality of injection cavities 151 are uniformly distributed along the elongated channel 150 and configured to inject a main gas flow 145 into a processing volume 139. The two inlet design of the barrel 149 improves the uniformity of the gas flow from each of the plurality of injection cavities 151. The main gas flow 145 may comprise 30% to 50% by volume hydrogen and 50% to 70% by volume oxygen, and has a flow rate varying from about 20 standard liters per minute (slm) to about 50 slm. The flow rate is based on a substrate 101 having a diameter of 300 mm, thus resulting in a flow rate varying from about 0.028 slm / cm² to about 0.071 slm / cm².

[0024] Under the vacuum force of the pump / pump system 136, the main airflow 145 is directed from the gas inlet 131 to the gas outlet 134. In one embodiment, the exhaust volume 125 of the exhaust assembly 124 is configured to extend the processing volume 139 to reduce the influence of the chamber structure on the geometry of the main airflow 145. Specifically, the exhaust volume 125 is configured to extend the processing volume 139 along the direction of the main airflow 145. The exhaust volume 125 can improve the uniformity of the main airflow 145 across the processing volume 139 from the inlet 131 to the outlet 134. The pump / pump system 136 can also be used to control the pressure of the processing volume 139. In one embodiment, the pressure inside the processing volume varies from about 1 Torr to about 19 Torr, such as between about 5 Torr and about 15 Torr.

[0025] In one embodiment, the side injection assembly 147 is coupled to the base ring 140 such that gas flows through the side port 122 along the side airflow 148 to the processing volume 139. The side injection assembly 147, the injection barrel 149, and the exhaust assembly 124 are offset relative to each other at an angle of approximately 90°. For example, the side injection assembly 147 may be located on the side of the base ring 140 between the injection barrel 149 and the exhaust assembly 124, wherein the injection barrel 149 and the exhaust assembly 124 are positioned at opposite ends of the base ring 140. The side injection assembly 147, the injection barrel 149, and the exhaust assembly 124 may intersect by being coplanar. In one embodiment, the side injection assembly 147, the injection barrel 149, and the exhaust assembly 124 are aligned with each other and positioned on substantially the same horizontal plane.

[0026] The side injection assembly 147 is in fluid communication with the gas source 152 via a flow adjustment device 146 configured to control the flow rate of the side airflow 148. The gas source 152 may include one or more gas sources. In one embodiment, the gas source 152 is a single gas source providing a hydrogen-containing gas, such as hydrogen. In one embodiment, the gas source 152 is a single gas source providing an oxygen-containing gas, such as oxygen. In one embodiment, the gas source 152 is a single gas source providing a mixture or blend of a hydrogen-containing gas, such as hydrogen, and an oxygen-containing gas, such as oxygen. In another embodiment, the gas source 152 is or is coupled to a distal radical source that generates free radicals to the side orifice 122.

[0027] In one embodiment, the gas source 152 is a remote plasma source (RPS) that generates hydrogen radicals to the side aperture 122. For a process that uses a lamp to heat the substrate and injects hydrogen and oxygen from a slit valve 137 into the processing chamber 100, a side injection assembly 147 is configured to inject hydrogen radicals into the processing volume 139. The hydrogen radicals introduced from the side injection assembly 147 increase the reaction rate along the edge of the substrate 101, thereby generating an oxide layer with improved thickness uniformity. The side gas flow 148 can have a flow rate ranging from about 5 slm to about 25 slm. For a substrate with a diameter of 300 mm, the flow rate ranges from about 0.007 slm / cm² to about 0.035 slm / cm².

[0028] In some alternative implementations, gas source 152 may contain multiple gas sources, such as a first gas source 153 and a second gas source 154, each configured to provide a process gas. The first gas source 153 and the second gas source 154 may have the same or different chemical compositions. The process gases from the first gas source 153 and the second gas source 154 may be mixed and blended before entering the flow adjustment device 146. In one implementation, the side flow 148 may be independently controlled and may include the same gas composition as the main flow 145. The composition and flow rate of the side flow 148 are important factors in forming an oxide layer with improved thickness uniformity.

[0029] In the embodiment illustrated in FIG1B, the side injection assembly 147 is a funnel-shaped structure extending toward the processing volume 139. In other words, the side hole 122 has an inner diameter that gradually increases toward the substrate 101. The side injection assembly 147 is configured to introduce most of the side airflow 148 into the edge of the hollow cone-shaped substrate 101. The edge of the substrate 101 can refer to the edge region measured from 0 mm to 15 mm, for example, 10 mm away from the edge of the substrate 101. Because the funnel-shaped structure of the side injection assembly 147 extends most of the side airflow 148 toward the edge of the substrate 101, the gas exposure of the substrate 101 is increased at or near the edge region. In one embodiment, the inner surface 179 of the side injection assembly 147 is configured such that it extends in a direction 189 substantially tangent to the edge of the substrate 101 or substantially tangent to the edge of the substrate support surface of the substrate support 138.

[0030] Furthermore, because the substrate 101 rotates counterclockwise 197, the gas velocity of most of the side airflow 148 entering from the side injection assembly 147 can be reduced by 5 times or more, for example, 10 times, thus resulting in faster growth at the edge of the substrate 101. The gas velocity of the side airflow 148 can be adjusted by one or more of the flow rate of the side airflow 148, the rotational speed of the substrate 101, and the unfolding angle of the side injection assembly 147, so that the side airflow 148 does not move too fast and prevent the side airflow 148 from fully reacting with the main airflow 145, or too slow so that the rotation of the substrate 101 can drag the side airflow 148 away from the edge of the substrate 101 and prevent it from fully reacting with the main airflow 145. As a result, the thickness profile at the edge of the substrate is improved.

[0031] The side injection assembly 147 may be made of any suitable material such as quartz, quartz liner, ceramic, ceramic coating, aluminum, stainless steel, steel, etc.

[0032] Although the substrate 101 shown in FIG1B rotates counterclockwise, the substrate 102 may rotate clockwise and benefit from the side airflow 148.

[0033] To further enhance the effect of the side airflow at the edge of the substrate 101, the side injection assembly 147 may be configured to have one or more gas inlets pointing towards the edge of the substrate 101. Figure 2A is a schematic cross-sectional top view of a side injection assembly 247 with angled gas tubes according to one embodiment of the present invention. The side injection assembly 247 may be used in place of the side injection assembly 147 illustrated in Figure 1B. For clarity, only the side injection assembly 247 and the substrate 101 are illustrated. However, it is contemplated that the side injection assembly 247 may be coupled to a base ring 140 between the gas inlet 131 and the gas outlet 134. The side hole 122, the gas inlet 131, and the gas outlet 134 may intersect coplanarly, as discussed above with reference to Figure 1B.

[0034] In the embodiment of FIG. 2A, the side injection assembly 247 is an elongated structure having a gas inlet 249 formed therein. The gas inlet 249 may be an elongated channel having any desired shape in cross-section, such as rectangular, square, circular, polygonal, hexagonal, or any other suitable shape. The gas inlet 249 is angled to provide a side airflow 248 to the processing volume 139 (FIG. 1B) via the side aperture 122 (FIG. 1B). The side airflow 248 flows along a flow path that adjusts the edge profile of the substrate 101 being processed. In one embodiment, the gas inlet 249 is configured such that the gas or free radical gas flows in a direction substantially tangential to the edge of the substrate 101 or substantially tangential to the edge of the substrate support surface of the substrate support 138 after the presence of the gas inlet 249. It is anticipated that the angle of the gas inlet 249 can be adjusted so that the side airflow 248 flows toward the center of the substrate 101 (or substrate support 138), approaches the periphery of the substrate 101 (or substrate support 138), or is spatially distributed at any desired location on the substrate 101 (or substrate support 138).

[0035] The side injection assembly 247 may include a single gas inlet 249 as shown. Alternatively, the side injection assembly 247 may include a plurality of gas inlets. In this case, the number of gas inlets may be from about 2 to about 10, and the number may vary depending on the size of the side injection assembly 247 and the size of the substrate to be processed. If multiple gas inlets are matched, one or more gas inlets 249 may be configured to face upward toward the quartz window 114 (FIG. 1A) to limit or prevent unwanted growth or other reactions from occurring, while other gas inlets face toward the edge of the substrate 101, or toward the edge of the substrate support surface of the substrate support 138. Alternatively, each of the plurality of gas inlets may point in the same direction.

[0036] In some implementations, the gas inlet 249 is angled such that the side airflow 248, or the gas or free radical gas, flows in a direction close to the tangent of the substrate support surface of the substrate 101 or substrate support 138. The term "close" as used herein refers to the distance between the side airflow 248 and the edge of the substrate 101. This distance can be within approximately 20 mm of the edge of the substrate 101, for example, from approximately 5 mm to approximately 10 mm. In other words, the flow path of the gas or free radical gas (i.e., the side airflow 248) and the tangent of the substrate 101 or substrate support surface of the substrate support 138 parallel to the flow path of the gas or free radical gas are approximately 5 mm to approximately 10 mm. It has been observed that the flow of the gas or free radical gas in the direction close to the tangent of the substrate can gradually increase the concentration of the substance along the edge of the substrate 101.

[0037] Regardless of whether the side gas flow 248 (gas or free radical gas) flows in a direction tangential to or near the edge of substrate 101 (or the edge of the substrate support surface of substrate support 138), it is observed that the gas or free radical gas significantly increases the reaction rate along the edge of substrate 101. For processes using lamp heating of the substrate and injection of hydrogen and oxygen from slit valve 137 into processing chamber 100, side injection assembly 247 is configured to provide side gas flow 248 of hydrogen free radicals. Providing hydrogen free radicals at or near the edge of substrate 101 activates oxygen at or near the edge of substrate 101, thereby generating an oxide layer with improved thickness uniformity along the edge of substrate 101.

[0038] In one exemplary embodiment, the side injection assembly 247 is configured to have a gas inlet 249 pointing toward the gas injection side of the processing chamber 100, such as the gas inlet 249 of the slit valve 137. In other words, the gas inlet 249 extends in a direction toward the gas injection side of the processing chamber. In this way, most of the gas flows along the side airflow 248 toward the gas injection side of the processing chamber 100 and reacts with (various) processing gases exiting from the injection barrel 149 (FIG. 1B) at or near the edge of the substrate 101 (or the substrate support surface of the substrate support 138).

[0039] Figure 2B depicts another exemplary embodiment in which the side injection assembly 257 is configured to have a gas inlet 259 pointing toward the exhaust side (e.g., pump / pump system 136) of the processing chamber 100. In other words, the gas inlet 249 extends toward the exhaust side of the processing chamber. In this way, most of the gas flows along the side airflow 258 toward the exhaust side of the processing chamber 100 and reacts with (various) processing gases exiting from the injection cartridge 149 (Figure 1B) at or near the edge of the substrate 101 (or the substrate support surface of the substrate support 138). Unexpectedly, it was observed that the guide gas for hydrogen radicals toward the exhaust side significantly increases the reaction with oxygen at or near the edge of the substrate during the process, where oxygen and hydrogen are introduced into the processing chamber from the slit valve, thereby generating an oxide layer with improved thickness uniformity along the substrate edge.

[0040] Similarly, the side injection assembly 247 or 257 is in fluid communication with the gas source 152. Therefore, the side gas flow 248, 258 can be a hydrogen-containing gas such as hydrogen or a radical gas such as hydrogen radicals, as discussed above regarding the side injection assembly 147. In either case, the side gas flow 248, 258 can have a flow rate varying from about 5 slm to about 25 slm. With a substrate 101 having a diameter of 300 mm as a reference, this results in a flow rate varying from about 0.007 slm / cm² to about 0.035 slm / cm².

[0041] Gas inlets 249 and 259 may have diameters that are varied in size to provide the flow rates discussed above. For example, gas inlets 249 and 259 may have diameters ranging from about 1 mm to about 2 cm, such as between about 5 mm and about 1 cm, for example, about 7 mm. The diameters of gas inlets 249 and 259 may be varied according to the desired gas flow rate of the gas or gas radicals required for the application.

[0042] The side injection components 247 and 257 may be made of any suitable material such as quartz, quartz lining, ceramic, ceramic coating, aluminum, stainless steel, steel, etc.

[0043] Although Figures 2A and 2B illustrate the substrate 101 rotating in the counterclockwise and clockwise directions respectively, the substrate 101 in Figures 2A and 2B can rotate in the clockwise and counterclockwise directions respectively and also benefit from the side airflows 248 and 258.

[0044] Figure 3 is a schematic cross-sectional top view of a side injection assembly 347 with a split gas tube according to another embodiment of the present invention. The side injection assembly 347 has a gas tube 369 branching into two gas inlets 349a and 349b. The side injection assembly 347 functions similarly to side injection assemblies 247 and 257 to guide the majority of the gas or free radical gas to flow along side airflows 348 and 358, which are directed toward the gas injection side (e.g., slit valve 137) and the exhaust side (e.g., pump / pump system 136) of the processing chamber 100, respectively. Additionally or alternatively, the gas inlets 349a and 349b may be configured such that the side airflows 348 and 358 flow in a direction tangential to or near the edge of the substrate 101 (or the edge of the substrate support surface of the substrate support 138).

[0045] Similarly, the side gas flow 348, 358 of gas or free radical gas increases the reaction rate along the edge of substrate 101. For processes using lamp heating of the substrate and injection of hydrogen and oxygen from slit valve 137 into processing chamber 100, the side injection assembly 347 can be configured to provide the side gas flow 348, 358 of hydrogen free radicals. Providing hydrogen free radicals at or near the edge of substrate 101 activates oxygen at or near the edge of substrate 101, thereby generating an oxide layer with improved thickness uniformity along the edge of substrate 101.

[0046] Although a heat treatment chamber is discussed in this application, implementation of this application can be used in any treatment chamber where uniform gas flow is desired.

[0047] The benefits of this invention include the use of a modified side gas assembly in the processing chamber to direct gas or radical gas toward the edge of the substrate to control growth uniformity throughout the entire substrate (i.e., from center to edge). The side gas assembly has angled gas inlets configured to point toward the gas injection side (e.g., a slit valve) and / or the exhaust side (e.g., a pump / pump system) of the processing chamber. Specifically, it has been observed that directing hydrogen radical gas toward the exhaust side by flowing hydrogen radical gas tangentially to or near the substrate edge significantly increases the reaction with oxygen at or near the substrate edge during the process, in which oxygen and hydrogen are introduced into the processing chamber from the slit valve, thereby generating an oxide layer with improved thickness uniformity along the substrate edge. As a result, the overall thickness uniformity of the substrate is improved.

[0048] Although the foregoing describes the implementation of this case, other and further implementations of this case may be designed without departing from the basic scope of the invention, and the scope of the invention is determined by the appended claims.

[0049] 100: Heat treatment chamber 101:Substrate 107: Controller 108: Heat source 110: Lighting assembly 114: Quartz Window 122: Side hole 123: Central axis 124: Exhaust assembly 125: Exhaust volume 130: Chamber assembly 131: Gas Inlet 134: Gas outlet 135: Gas Source 136: Pump / Pump System 137: Slit valve 138: Substrate support 139: Processing volume 140: Base ring 141: Primary Gas Source 142: Second gas source 143: Entrance 144: Entrance 145: Main airflow 146: Flow regulating device 147: Side Injection Component 148: Crossflow 149: Injection cylinder 150: Slender Channel 151: Injection points 152: Gas Source 153: First Gas Source 154: Second gas source 179: Inner surface 189: Direction 197: Counterclockwise direction 247: Side Injection Component 248: Crossflow 249: Gas Inlet 257: Side Injection Component 258: Crossflow 259: Gas Inlet 347: Side Injection Component 348: Crossflow 349a: Gas Inlet 349b: Gas Inlet 358: Crossflow 369: Gas tube

[0050] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A chamber assembly defines a processing volume; A substrate support member is disposed in the processing volume, wherein the substrate support member has a substrate support surface; a gas source assembly is in fluid communication with an inlet in a first sidewall of the chamber assembly; an exhaust assembly is in fluid communication with an outlet in a second sidewall of the chamber assembly, the second sidewall being opposite to the first sidewall; and a side injection assembly is coupled to a side hole in a third sidewall of the chamber assembly, the third sidewall being located on a side different from the inlet and outlet of the chamber assembly, wherein the side injection assembly includes a structure having a plurality of gas inlets operable to direct a gas flow toward the processing volume; wherein the side hole, the inlet, and the outlet intersect by a coplanar structure; The gas source assembly is in fluid communication with a first gas source and a second gas source, which are different in chemical composition; the side injection assembly is in fluid communication with a third gas source, which is different in chemical composition from the first gas source.

2. The device as claimed in claim 1, wherein at least one of the plurality of gas inlets of the side injection assembly is directed toward a center of the substrate support surface.

3. The device as claimed in claim 1, wherein at least one of the plurality of gas inlets of the side injection assembly is operable to provide the airflow in a direction tangential to or adjacent to an edge of the substrate support surface.

4. The device as claimed in claim 1, wherein the first gas source includes an oxygen-containing gas, the second gas source includes a hydrogen-containing gas, the third gas source includes a hydrogen-containing gas or a free radical gas, and the third gas source includes a remote plasma source.

5. The apparatus as described in claim 4, wherein the third gas source further comprises an oxygen-containing gas.

6. An apparatus for processing a substrate, the apparatus comprising: A chamber assembly that defines a processing volume; A substrate support member is disposed in the processing volume, wherein the substrate support member has a substrate support surface; a gas source assembly is in fluid communication with an inlet in a first sidewall of the chamber assembly; an exhaust assembly is in fluid communication with an outlet in a second sidewall of the chamber assembly, the second sidewall being opposite to the first sidewall; and a side injection assembly is coupled to a side hole in a third sidewall of the chamber assembly, the third sidewall being located on a side different from the inlet and outlet of the chamber assembly, wherein the side injection assembly includes a structure having a plurality of gas inlets operable to guide a gas flow toward the processing volume; wherein the gas source assembly is in fluid communication with a first gas source and a second gas source, the first gas source and the second gas source being different in chemical composition; wherein the side injection assembly is in fluid communication with a third gas source, which is different in chemical composition from the first gas source; At least one of the plurality of gas inlets of the side injection assembly is directed toward an edge of the substrate support surface and can be operated to provide the airflow in a direction tangential to or adjacent to an edge of the substrate support surface.

7. The device as claimed in claim 6, wherein at least one of the plurality of gas inlets of the side injection assembly is directed toward a center of the substrate support surface.

8. The device as claimed in claim 6, wherein the first gas source includes an oxygen-containing gas, the second gas source includes a hydrogen-containing gas, the third gas source includes a hydrogen-containing gas or a free radical gas, and the third gas source includes a remote plasma source.

9. The apparatus as described in claim 8, wherein the third gas source further comprises an oxygen-containing gas.

10. An apparatus for processing a substrate, the apparatus comprising: A chamber assembly that defines a processing volume; A substrate support member is disposed in the processing volume, wherein the substrate support member has a substrate support surface; a gas source assembly is in fluid communication with an inlet of the chamber assembly; an exhaust assembly is in fluid communication with an outlet of the chamber assembly; and a side injection assembly is coupled to a side hole in a side wall of the chamber assembly, the side wall being located on a side different from the inlet and outlet of the chamber assembly, wherein the side injection assembly includes a structure having a plurality of gas inlets operable to direct a gas flow toward the processing volume; wherein the side hole, the inlet, and the outlet intersect by a coplanar structure. The gas source assembly is in fluid communication with a first gas source and a second gas source, which are different in chemical composition; the side injection assembly is in fluid communication with a third gas source, which is different in chemical composition from the first gas source; and at least one of the plurality of gas inlets of the side injection assembly is guided toward a center of the substrate support surface.

11. The device as claimed in claim 10, wherein at least one of the plurality of gas inlets of the side injection assembly is operable to provide the airflow in a direction tangential to or adjacent to an edge of the substrate support surface.

12. The apparatus of claim 10, wherein the first gas source comprises an oxygen-containing gas, each of the second and third gas sources comprises a hydrogen-containing gas, the third gas source comprises a hydrogen-containing gas or a radical gas containing hydrogen radicals, and the third gas source comprises a remote plasma source.

13. The apparatus as claimed in claim 12, wherein the third gas source further comprises an oxygen-containing gas.

14. An apparatus for processing a substrate, the apparatus comprising: A chamber assembly that defines a processing volume; A substrate support member is disposed in the processing volume, wherein the substrate support member has a substrate support surface; a gas source assembly is in fluid communication with an inlet in a first sidewall of the chamber assembly; an exhaust assembly is in fluid communication with an outlet in a second sidewall of the chamber assembly, the second sidewall being opposite to the first sidewall; and a side injection assembly is coupled to a side hole in a third sidewall of the chamber assembly, the third sidewall being located on a side different from the inlet and outlet of the chamber assembly, wherein the side injection assembly includes a structure having a plurality of gas inlets operable to guide a gas flow toward the processing volume; wherein the gas source assembly is in fluid communication with a first gas source and a second gas source, the first gas source and the second gas source being different in chemical composition; wherein the side injection assembly is in fluid communication with a third gas source, which is different in chemical composition from the first gas source; At least one of the plurality of gas inlets of the side injection assembly is directed toward an edge of the substrate support surface and is operable to provide the airflow in a direction tangential to or adjacent to an edge of the substrate support surface; wherein at least one of the plurality of gas inlets of the side injection assembly is directed toward a center of the substrate support surface.

15. The apparatus of claim 14, wherein the first gas source comprises an oxygen-containing gas, the second gas source comprises a hydrogen-containing gas, the third gas source comprises a hydrogen-containing gas or a free radical gas, and the third gas source comprises a remote plasma source.

16. The apparatus as claimed in claim 15, wherein the third gas source further comprises an oxygen-containing gas.

Images