Systems and methods for manufacturing high-efficiency capacitor layers and capacitors with 2d / 3d structures

The 2D/3D/2D heterostructure with atomically thin layers addresses the energy density and efficiency limitations of electrostatic capacitors by preserving crystallinity and controlling relaxation time, achieving unprecedented energy storage performance.

WO2025147508A1 Publication Date: 2025-07-10WASHINGTON UNIV IN SAINT LOUIS
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Patent Information

Application Number
PCT/US2025/010077
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-04-17
Filing Date
2025-01-02
Publication Date
2025-07-10

AI Technical Summary

Technical Problem

Existing electrostatic capacitors face limitations in energy density due to high remnant polarization in ferroelectric materials, leading to significant energy loss and reduced efficiency, while conventional methods to enhance performance often compromise crystallinity and dielectric constant.

Method used

A 2D/3D/2D heterostructure is fabricated by sandwiching atomically thin 2D layers between a freestanding ferroelectric nanomembrane, preserving crystallinity and controlling relaxation time to minimize energy loss and maximize energy density.

Benefits of technology

The approach achieves an energy density of 191.7 J/cm³ with over 90% efficiency, significantly surpassing previous capabilities by maintaining high dielectric constant and low energy loss, suitable for high-frequency and miniaturized electronic devices.

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Abstract

Systems and methods for the fabrication of highly efficient capacitor layers and capacitors by transferring 2D or 3D layers on a ferroelectric layer, lifted off from the host substrate, including electrodes. The type of 2D or 3D layer may be selected according to the specific situation, and may include up to thousands of layers. Capacitors and capacitor layers derived from these systems and methods are capable of providing higher energy storage than the conventional approaches that include a dielectric / ferroelectric / dielectric layer structure due to reduction in the dielectric constant and polarization density that is much less than that of the ferroelectric layer.
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