Glass substrate and photosensitive glass wafer

Abstract

The present disclosure relates to a glass substrate and a photosensitive glass wafer and discloses a glass substrate, a glass ceramic substrate, a photosensitive glass wafer provided with a photosensitive property, a photosensitive glass ceramic wafer, and an optically processed article, wherein the glass substrate is composed of SiO2-Li2O-Al2O3-based glass and include 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, with the SiO2 / Li2O molar ratio being 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio satisfying 14.50 to 20.50, and has a coefficient of thermal expansion of up to 9 ppm / K and a surface roughness (Ra) of up to 10 nm. The glass substrate has a surface roughness suitable for forming fine patterns, exhibits excellent thermal properties, and is advantageous for use as semiconductor core substrates. The substrate allows fabrication as large-area thin-film, facilitates the formation of fine via holes, and enables the adjustment of physical properties according to intended applications through variation in heat treatment conditions, thereby being useful as an interposer.

Description

Glass substrates and photosensitive glass wafers

[0001] The present invention relates to a glass substrate and a photosensitive glass wafer, and more particularly, to a glass substrate and a photosensitive glass wafer useful as a semiconductor core substrate or interposer.

[0002] Photosensitive glass is a SiO2-Li2O-Al2O3 glass containing small amounts of photosensitive metals such as Au, Ag, and Cu, and CeO2 as a sensitizer. This glass has a long history, and Stookey of Corning discovered that adding CeO2 and irradiating it with ultraviolet light greatly increases the sensitivity and makes it easy to color. Irradiation with ultraviolet light causes a redox reaction to occur, generating metal atoms. When heated, the metal atoms form a condensed colloid, and with this colloid as a crystal nucleus, LiO2·SiO2 crystals are formed, and when irradiated with ultraviolet light, that area becomes colored. The LiO2·SiO2 (lithium metasilicate) precipitated here is easily soluble in HF, and the dissolution rate is approximately 50 times faster than that of the unirradiated area. This difference in dissolution rate enables selective etching, and can be used not only for machining, but also for forming finely processed objects.

[0003] These characteristics provide an advantage in terms of via hole processability when manufacturing semiconductor packages.

[0004] In this respect, photosensitive glass, which is cheaper than silicon wafers and has better mechanical properties than polyimide, can be useful as a substrate for interposers, wafer glass, etc.

[0005] In a broader sense, photosensitive glass can encompass any glass that undergoes a change in its crystallization properties when exposed to radiation, such as UV radiation.

[0006] As for related prior art technologies, Korean Patent No. 1468680 describes a method of forming a through-electrode on an interposer substrate by using a photosensitive glass substrate instead of a silicon substrate as the interposer substrate.

[0007] International Patent Publication No. WO2015 / 033826 discloses a method for manufacturing a silicate ceramic substrate, comprising: a micro-machining process for micro-machining a plate-shaped substrate made of photosensitive glass containing at least silicon oxide and lithium oxide; and a method for crystallizing the photosensitive glass by heat treatment after the micro-machining process, such that the silicate ceramic has a crystallinity of 95% or higher, the silicate ceramic has a lithium disilicate crystal phase and an α-quartz crystal phase, and the lithium disilicate crystal phase is more abundant than the α-quartz crystal phase. This is described as being able to provide a plate-shaped substrate with excellent mechanical properties even if it is thin by crystallizing silicate glass to form a ceramic (polycrystal) with a very high crystallinity and controlling the ratio of crystal phases precipitated by crystallization.

[0008] Japanese Patent Application Laid-Open No. 2015-040168 discloses a method for manufacturing a photosensitive glass substrate by correcting the irradiation position of the energy beam based on the amount of dimensional change in the photosensitive glass caused by heat treatment such as the first heat treatment, in which a step of irradiating an energy beam to a photosensitive glass plate-shaped substrate, a crystallization step of crystallizing a crystalline substance by a first heat treatment to obtain a crystallized portion, and a microprocessing step of dissolving and removing the crystallized portion to obtain a photosensitive glass substrate are described. The photosensitive glass exemplified herein is a SiO2-Li2O-Al2O3 glass, which contains Au, Ag, and Cu as photosensitive components and CeO2 as a sensitizing component. As a specific composition, it is a composition containing 55 to 85 mass% of SiO2, 2 to 20 mass% of Al2O3, and 5 to 15 mass% of Li2O, such that the sum of SiO2, Al2O3, and Li2O is 85 mass% or more with respect to the entire photosensitive glass, 0.001 to 0.05 mass% of Au, 0.001 to 0.5 mass% of Ag, and 0.001 to 1 mass% of Cu2O as photosensitive components, and further containing 0.001 to 0.2 mass% of CeO2 as a sensitizing component.

[0009] As another technology, Korean Patent No. 1934157 discloses a photosensitive glass and a method for manufacturing the same, which discloses a photosensitive glass that is more sensitive to UV light irradiation and can be easily crystallized to a higher aspect ratio. Specifically, Si 4+ , a photosensitive structureable glass comprising a pair of one or more crystal agonists, one or more crystal antagonists and one or more nucleating agents, wherein a. the crystal agonist is Na + , K + and Li + is selected from, and b. The decision antagonist is Al 3+ , B 3+ , Zn 2+ , Sn 2+ and Sb 3+, and c. The pair of nucleating agents comprises cerium and one or more agents selected from the group of silver, gold and copper, and Si on a cat.-% basis. 4+ The molar ratio of the agonist to the molar ratio of the agonist is at least 0.3 and at most 0.85, and the glass is described to have a cooling state corresponding to normal cooling from a temperature T1 to a temperature T2 at a cooling rate K of 10°C / h to 200°C / h, wherein the temperature T1 is at least above the glass transition temperature Tg of the glass, and the temperature T2 is at least 150°C below T1. The glass is described to be useful, structured and / or unstructured, for microtechnology, microreaction technology, electronic packaging, microfluidic components, in or as FED spacers, for biotechnology, as interposers, as three-dimensional structure antennas or three-dimensional structure antennas, and the glass body is also described to be usable as a substrate or a glass circuit board in the field of semiconductors, for example, logic circuits / integrated circuits, memories, etc.

[0010] The present invention provides a glass substrate, glass wafer, glass ceramic substrate, glass ceramic wafer, etc., which are useful as core glass for semiconductor packages, interposers, etc. based on the same glass composition, are more advantageous in forming fine via holes, and whose physical properties can be adjusted according to the intended use by changing heat treatment conditions after photoprocessing.

[0011] One embodiment of the present invention is made of glass of the SiO2-Li2O-Al2O3 system,

[0012] A glass substrate is provided, which comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, has a SiO2 / Li2O molar ratio of 2.30 to 3.50, a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, has a thermal expansion coefficient of at most 9 ppm / K, and has a surface roughness (Ra) of at most 10 nm.

[0013] Another embodiment of the present invention provides a glass ceramic substrate comprising a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system, comprising 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, wherein the SiO2 / Li2O molar ratio is 2.30 to 3.50, the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, the crystallinity is at most 30%, and the crystal phase has an average particle diameter of 10 nm to 200 nm, a thermal expansion coefficient of at most 9 ppm / K, and a surface roughness (Ra) of at most 10 nm.

[0014] Another embodiment of the present invention provides a photosensitive glass wafer, which is made of a SiO2-Li2O-Al2O3 system glass including a photosensitive component and a sensitizing component, and includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, has a SiO2 / Li2O molar ratio of 2.30 to 3.50, a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, and has a thickness of 500 to 1,200 μm and a diameter of at least 200 mm.

[0015] Another embodiment of the present invention provides a photosensitive glass ceramic wafer, which is composed of a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system including a photosensitive component and a sensitizing component, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, and the crystal phase has an average particle diameter of 10 nm to 200 nm, a crystallinity of at most 30%, a thickness of 500 to 1,200 μm, and a diameter of at least 200 mm.

[0016] Another embodiment of the present invention provides an exposed glass wafer, which comprises a plurality of discontinuous crystallized glass regions within a continuous SiO2-Li2O-Al2O3 system glass matrix, wherein the glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, wherein the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and wherein the crystallized glass regions comprise a crystalline phase having an average particle diameter of 10 nm to 200 nm, and wherein the crystallized glass regions have a faster dissolution rate in HF than the glass matrix.

[0017] One embodiment of the present invention provides an exposed glass ceramic wafer, characterized in that the glass matrix includes a continuous phase including a crystal phase dispersed in a SiO2-Li2O-Al2O3 system, a crystallized glass region including a crystal phase that is discontinuously present in a plurality of pieces and is different from the crystal phase, the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio satisfies 2.30 to 3.50 and 14.50 to 20.50 wt%, the crystal phase dispersed in the glass matrix has an average particle diameter of 10 nm to 200 nm, the continuous phase has a crystallinity of up to 30%, and the crystallized glass region has a faster dissolution rate in HF than the continuous phase.

[0018] One embodiment of the present invention provides a photoprocessed glass wafer including a plurality of via holes formed discontinuously in a glass matrix of the SiO2-Li2O-Al2O3 system, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%.

[0019] One embodiment of the present invention provides a photoprocessed glass ceramic wafer comprising a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system and a plurality of via holes formed discontinuously, wherein the glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, wherein the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and wherein the crystal phase dispersed in the glass matrix has an average particle diameter of 10 nm to 200 nm and a crystallinity of at most 30%.

[0020] One embodiment of the present invention is obtained by heat-treating the above-described photo-processed glass wafer, and includes a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system, and includes a plurality of via holes formed discontinuously, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and the crystal phase comprises lithium disilicate as a main crystal phase, and the main crystal phase has an average particle diameter of 10 nm to 200 nm, the via holes have an average diameter of at most 80 ㎛, an aspect ratio of at most 1 / 5, and a fracture strength of at least 80 MPa. Provides an interposer.

[0021] One embodiment of the present invention is obtained by heat-treating the photo-processed glass ceramic wafer of the other embodiment described above, and includes a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system, and includes a plurality of via holes formed discontinuously, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and the crystal phase comprises lithium disilicate as a main crystal phase, and the main crystal phase has an average particle diameter of 10 nm to 200 nm, a crystallinity of at least 30%, and the via holes have an average diameter of at most 80 ㎛, and an aspect ratio of at most 1 / 5 and provides an interposer having a breaking strength of at least 80 MPa.

[0022] The interposer according to the above embodiments may include vergilite or spodumene as an additional crystal phase.

[0023] Another embodiment of the present invention is obtained by heat-treating a photo-processed glass ceramic wafer according to the above embodiments, and includes a plurality of via holes formed discontinuously in a ceramic body whose main crystal phase is lithium disilicate, wherein the ceramic body includes an additional crystal phase selected from vergilite or spodumene, and the via holes may have an average diameter of at most 80 ㎛, an aspect ratio of at most 1 / 5, and a fracture strength of at least 80 MPa.

[0024] Another embodiment of the present invention can provide a semiconductor package including a heat treatment product of a glass substrate according to the above embodiment as a core substrate.

[0025] Another embodiment of the present invention can provide a semiconductor package including a heat treatment product of a glass ceramic substrate according to the above embodiment as a core substrate.

[0026] According to the present invention, a SiO2-Li2O-Al2O3 glass substrate, a glass ceramic substrate, a photosensitive glass wafer, a photosensitive glass ceramic wafer, etc., satisfying a specific basic composition are provided, which have a surface roughness suitable for forming a fine pattern and excellent thermal characteristics, making them advantageous as a semiconductor core substrate, and which can implement a large area while being a thin film, are advantageous for forming a fine via hole, and can obtain an effect of being able to control the physical properties according to the intended use by changing the heat treatment conditions, and thus can be useful as an interposer.

[0027] The aforementioned and additional aspects of the present invention will become more apparent through the following preferred embodiments. These embodiments of the present invention will be described in detail below to facilitate understanding and reproducibility for those skilled in the art.

[0028]

[0029] Semiconductor packages can be classified into conventional packages, in which the packaging process is performed by cutting the wafer into chip units, and wafer-level packages, in which part or all of the packaging process is performed at the wafer level and then cut into individual products.

[0030] Wafer-level packages can be classified into RDL (Re-Distribution Layer), which rearranges pads that are electrically connected to the outside world on the chip through a wafer-level process; Flip Chip Package, which forms solder bumps on the wafer to carry out the packaging process; WLCSP (Wafer Level Chip Scale Package), which completes the package by forming wiring and solder balls on the wafer without a medium such as a substrate; and TSV (Through Si Via) package, which makes internal connections between stacked chips. In addition, WLCSP can be classified into Fan-in WLCSP, which attaches wiring and solder balls directly on the wafer, and Fan-out WLCSP, which rearranges chips to form a molded wafer, forms wiring through a wafer-level process on a package larger than the chip size, and attaches solder balls. In semiconductor packages, the substrate is used as a core and an interposer.

[0031] As a core substrate material, glass has excellent temperature-dependent deformation and signal characteristics, making it advantageous for miniaturization and large-area development. Glass-core substrates have a Young's modulus (elastic modulus) of 70 to 80 GPa, which is four times higher than that of conventional organic materials (around 20), making them less likely to bend, have a smooth surface, and are suitable for forming microcircuits. Glass-core substrates are growing primarily in high-end products equipped with high-performance semiconductors, such as server CPUs and artificial intelligence (AI) accelerators.

[0032]

[0033] The glass substrate proposed in the present invention is made of glass of the SiO2-Li2O-Al2O3 system, and includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and has a SiO2 / Li2O molar ratio of 2.30 to 3.50, a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, a thermal expansion coefficient of at most 9 ppm / K, and a surface roughness (Ra) of at most 10 nm.

[0034] In terms of being able to realize more stable strength in the substrate state, the present invention can provide a glass ceramic substrate which is composed of a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system, and includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and has a SiO2 / Li2O molar ratio of 2.30 to 3.50, a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, a crystallinity of 30% or less at most, and the crystal phase has an average particle diameter of 10 nm to 200 nm, a thermal expansion coefficient of 9 ppm / K at most, and a surface roughness (Ra) of 10 nm at most.

[0035] These glass substrates or glass ceramic substrates may contain P2O5 as a nucleating agent.

[0036] In the above and below descriptions, the substrate includes a semiconductor wafer such as a silicon wafer.

[0037] The substrate may have a Young's modulus in the range of 50 GPa to 90 GPa, a Poisson's ratio in the range of about 0.20 to 0.26, and a density in the range of about 2,500 kg / ㎥ to 2,700 kg / ㎥. Additionally, the glass or glass ceramic material of the substrate may preferably have a coefficient of thermal expansion (at 20°C to 25°C) of less than 10 ppm / K, for example less than 8 ppm / K, or less than 5 ppm / K, or from 0.5 ppm / K to 4.5 ppm / K, or from 2.5 ppm / K to about 4.0 ppm / K, or from 3.0 ppm / K to 3.5 ppm / K.

[0038] As electronic devices become more highly integrated and miniaturized, the formation of high-resolution micropatterns becomes increasingly necessary. However, to achieve nano- to micro-scale micropatterns, not only the substrate material but also its surface roughness must be supported. In this regard, the substrate proposed in the present invention can have a surface roughness (Ra) of up to 10 nm.

[0039] Such glass substrates or glass ceramic substrates are those whose surfaces include arrays of devices selected from integrated circuits, MEMS, microsensors, power semiconductors, light emitting diodes, photonic circuits, interposers, embedded passive devices, and other microdevices fabricated on or from silicon and other semiconductor materials, such as silicon-germanium, gallium arsenide, and gallium nitride. The surfaces of these devices may typically include structures formed from one or more of the following materials:

[0040]

[0041] An interposer for semiconductors acts as a 'mediator' that seamlessly connects high-performance chips (Integrated Chips, ICs) such as CPUs (Central Processing Units) and GPUs (Graphics Processing Units) with PCBs (Printed Circuit Boards) in IT (information technology) devices. It connects the input / output (I / O) information coming and going from the chips and transmits it to the main board, and also transmits the power required for the chip's operation to every corner of the semiconductor chip.

[0042] The glass interposer proposed in the present invention is a photosensitive glass, and the photosensitive component may be, but is not limited to, a single metal or metal oxide such as Au, Ag, or Cu, which are commonly known in photosensitive glasses, or a combination thereof. This photosensitive component functions as a nucleating agent that forms a metal nucleus when irradiated with ultraviolet rays. The sensitizing component typically includes CeO2. When ultraviolet light having a wavelength of about 320 nm is irradiated on the photosensitive glass containing the photosensitive component and the sensitizing component, metal atoms are generated by a mechanism as shown in the following equation 1, and in a subsequent heat treatment process (strengthening), desired crystal nuclei can be formed around the metal atoms.

[0043] <Formula 1>

[0044] Ce 3+ +Ag + +hν→Ce 4+ +Ag 0

[0045]

[0046] Specifically, in one embodiment of the present invention, a photosensitive glass wafer is provided, which is made of a SiO2-Li2O-Al2O3 system glass including a photosensitive component and a photosensitive component, and includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, has a SiO2 / Li2O molar ratio of 2.30 to 3.50, a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, and has a thickness of 500 to 1,200 μm and a diameter of at least 200 mm.

[0047] These photosensitive glass wafers may include P2O5 in the glass composition, but it may be desirable that the content thereof be at a level that does not impair the function of the photosensitive component and the nucleating agent of the sensitizing component.

[0048] In the description above and below, the terms 'photosensitive component' and 'sensitizing component' mean a pair included as a nucleating agent in a photosensitive glass known as glass that is sensitive when irradiated with UV light, and can be defined as including, for example, cerium and one or more agents selected from silver, gold and copper.

[0049] The photosensitive glass wafer proposed in the present invention can generate crystal nuclei in an area irradiated with UV light, and can form a crystal phase, such as lithium metasilicate, through a subsequent heat treatment process, which is a so-called development process, and such a crystal phase can be formed with a size of about 10 nm to 200 nm.

[0050] In another embodiment of the present invention, an exposed glass wafer can be provided, which includes a plurality of discontinuous crystallized glass regions within a continuous SiO2-Li2O-Al2O3 system glass matrix, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%; and the crystallized glass region includes a crystal phase having an average particle diameter of 10 nm to 200 nm, and is characterized in that the etching property with respect to HF is greater than that of the glass matrix.

[0051] In the case of a glass wafer according to one embodiment of the present invention, a nano-sized crystal phase is formed in the exposed area after exposure, and the etchability against HF is greater than that of the glass matrix in the non-exposed area, which can ultimately be advantageous in terms of forming a fine via hole.

[0052] In such an exposed glass wafer, when the exposure area is etched, a photoprocessed glass wafer can be obtained, which includes a plurality of via holes formed discontinuously within a glass matrix of the SiO2-Li2O-Al2O3 system, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%.

[0053] These photo-processed glass wafers can be subjected to a heat treatment process, so-called crystallization heat treatment.

[0054] The glass wafer of the present invention can adjust the degree of heat treatment in accordance with the desired mechanical properties and optical characteristics in the heat treatment process. Of course, specific heat treatment conditions, etc. can be referred to in the description of Korean Patent Registration No. 10-2642739 previously applied for and registered by the present applicant.

[0055] Ultimately, by heat-treating the above-described photo-processed glass wafer, an interposer can be obtained, which includes a crystal phase dispersed in a glass matrix of the LiO2-Li2O-Al2O3 system, and includes a plurality of via holes formed discontinuously, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and satisfies a SiO2 / Li2O molar ratio of 2.30 to 3.50 and a SiO2 / Al2O3 molar ratio of 14.50 to 20.50 wt%, and the crystal phase comprises lithium disilicate as a main crystal phase, and the main crystal phase has an average particle diameter of 10 nm to 200 nm, the via holes have an average diameter of at most 80 μm, an aspect ratio of at most 1 / 5, and a fracture strength of at least 80 MPa.

[0056] Here, the crystal phase may include, in addition to the main crystal phase, lithium disilicate, additional crystal phases such as vergilite or spodumene.

[0057]

[0058] In another embodiment of the present invention, a photosensitive glass ceramic wafer can be provided, which comprises a crystalline phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system including a photosensitive component and a sensitizing component, in order to maintain the photosensitive properties while imparting more strength, wherein the glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, wherein the SiO2 / Li2O molar ratio satisfies 2.30 to 3.50 wt% and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and wherein the crystalline phase has an average particle diameter of 10 nm to 200 nm, a crystallinity of at most 30%, a thickness of 500 to 1,200 μm, and a diameter of at least 200 mm.

[0059] When the wafer that serves as the base for photoprocessing such as exposure and etching is a photosensitive glass ceramic wafer that satisfies a predetermined degree of crystallinity and has a crystal size of nano-size, the photosensitivity can be maintained while a difference in solubility in HF after exposure can be provided between the exposed and non-exposed areas. This can be due to a difference in crystal size or, of course, due to a difference in crystal size of the same crystal phase.

[0060] In the case of these photosensitive glass ceramic wafers, P2O5 may be contained within the glass matrix, but since it has gone through a single crystallization step, it may be present only in trace amounts or may not be present at all.

[0061] When such a photosensitive glass ceramic wafer is exposed, an exposed glass ceramic wafer can be obtained, characterized in that the glass matrix includes a continuous phase including a crystal phase dispersed in a SiO2-Li2O-Al2O3 system, and a crystallized glass region including a crystal phase that is discontinuously present in a plurality of pieces and is different from the crystal phase, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio satisfies 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio 14.50 to 20.50 wt%, the crystal phase dispersed in the glass matrix has an average particle diameter of 10 nm to 200 nm, the continuous phase has a crystallinity of up to 30%, and the crystallized glass region has a faster dissolution rate in HF than the continuous phase.

[0062] In the description of "comprising a crystallized glass region that exists discontinuously in multiple numbers and includes a crystal phase different from the crystal phase", "the crystal phase" means a crystal phase included in the continuous phase of the exposed glass ceramic wafer, and "a crystal phase different from the crystal phase" may include a case where the crystal type is different from the crystal phase included in the continuous phase of the exposed glass ceramic wafer, and a case where the crystal size is different may also be included.

[0063] When an exposed glass ceramic wafer including a non-exposed portion and an exposed portion is exposed in a photosensitive glass ceramic wafer state and is photoprocessed such as etching, a photoprocessed glass ceramic wafer can be obtained, which includes a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system and includes a plurality of via holes formed discontinuously, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, and the crystal phase dispersed in the glass matrix has an average particle diameter of 10 nm to 200 nm, and a crystallinity of up to 30%.

[0064] These photo-processed glass ceramic wafers can be subjected to a heat treatment process, so-called crystallization heat treatment.

[0065] The glass ceramic wafer of the present invention can adjust the degree of heat treatment in accordance with the desired mechanical properties and optical characteristics in the heat treatment process. Of course, specific heat treatment conditions, etc. can be referred to in the description of Korean Patent Registration No. 10-2642739 previously applied for and registered by the present applicant.

[0066] Ultimately, by heat-treating the above-described photo-processed glass ceramic wafer, a glass matrix having a SiO2-Li2O-Al2O3 system is formed, which includes a crystal phase dispersed in the glass matrix, and includes a plurality of via holes formed discontinuously, wherein the glass matrix includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, and the crystal phase is lithium disilicate as a main crystal phase, and the main crystal phase has an average particle diameter of 10 nm to 200 nm, a crystallinity of at least 30%, and the via holes have an average diameter of at most 80 ㎛, an aspect ratio of at most 1 / 5, and a fracture strength of at least An interposer of 80 MPa can be obtained.

[0067] Here, the crystal phase may include, in addition to the main crystal phase, lithium disilicate, additional crystal phases such as vergilite or spodumene.

[0068]

[0069] In the glass substrate, glass ceramic substrate, photosensitive glass wafer, photosensitive glass ceramic wafer, etc. according to the above-described embodiments of the present invention, the basic composition of the SiO2-Li2O-Al2O3 system includes 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, other additional compositions may be combined in consideration of the crystal phase to be implemented in the overall description of the present invention, the goal that the size of the crystal phase should be implemented in a nanoscale, and the etching speed in the photoprocessing process involving the exposure / chemical process.

[0070]

[0071] Ultimately, by using the photosensitive glass wafer or photosensitive glass ceramic wafer provided by the present invention, a dielectric constant of 6 or less and a dielectric constant of 110×10 over a bandwidth of 20 GHz are achieved. -4 It is possible to process via holes with a diameter of 10㎛ or less and an aspect ratio of 1 / 10 to 1 / 20 through exposure / chemical process with the following dielectric loss.

[0072]

[0073] Furthermore, according to an exemplary embodiment of the present invention, when heat-treating the above-described photo-processed glass ceramic wafer, the crystallinity can be further increased to provide an interposer in a state in which an amorphous glass matrix is ​​almost entirely absent.

[0074] Specifically, this may be an interposer comprising a ceramic body having a main crystal phase of lithium disilicate, a plurality of via holes formed discontinuously, the ceramic body including an additional crystal phase selected from vergilite or spodumene, and the via holes having an average diameter of at most 80 ㎛, an aspect ratio of at most 1 / 5, and a fracture strength of at least 80 MPa.

[0075]

[0076] The glass substrate, glass ceramic substrate, photosensitive glass wafer, and photosensitive glass ceramic wafer provided in the present invention may have a thickness of at least 1,000 μm after undergoing a slimming process. Ultimately, a thickness of 500 μm or less may be preferable.

[0077] As semiconductor chip-level miniaturization technology reaches its limits, the importance of system integration through semiconductor packaging, a post-processing technology, is growing. As multi-layer semiconductor packages become thinner, warpage, a phenomenon that occurs, has become the most significant factor affecting their reliability. This warpage can be attributed to two factors: chemical shrinkage during the epoxy molding compound (EMC) curing process during the semiconductor packaging process and physical shrinkage due to differences in thermal expansion coefficients among semiconductor package components.

[0078] According to the present invention, even with such a thin film thickness, warpage can be achieved up to 600 ㎛, preferably up to 200 ㎛.

[0079] The present invention relates to a glass substrate and a photosensitive glass wafer, and more particularly, to a glass substrate and a photosensitive glass wafer useful as a semiconductor core substrate or interposer.

[0080] According to the present invention, a SiO2-Li2O-Al2O3 glass substrate, a glass ceramic substrate, a photosensitive glass wafer, a photosensitive glass ceramic wafer, etc., satisfying a specific basic composition are provided, which have a surface roughness suitable for forming a fine pattern and excellent thermal characteristics, making them advantageous as a semiconductor core substrate, and which can implement a large area while being a thin film, are advantageous for forming a fine via hole, and can obtain an effect of being able to control the physical properties according to the intended use by changing the heat treatment conditions, and thus can be useful as an interposer.

Claims

1. It is made of glass of the SiO2-Li2O-Al2O3 system. Contains 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, The SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, With a coefficient of thermal expansion of up to 9 ppm / K and a surface roughness (Ra) of up to 10 nm, Glass substrate.

2. It is composed of a crystal phase dispersed within a glass matrix of the SiO2-Li2O-Al2O3 system. Contains 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, The SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, The crystallinity is up to 30%, The average particle size of the crystal phase is 10 nm to 200 nm, With a coefficient of thermal expansion of up to 9 ppm / K and a surface roughness (Ra) of up to 10 nm, Glass ceramic substrate.

3. It is made of glass of the SiO2-Li2O-Al2O3 system containing a photosensitive component and a photosensitive component. Contains 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, The SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%, Having a thickness of 500 to 1,200 μm and a diameter of at least 200 mm, Photosensitive glass wafer.

4. It is composed of a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system containing a photosensitive component and a photosensitive component. The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%. The average particle size of the crystal is 10 nm to 200 nm, The crystallinity is up to 30%, Having a thickness of 500 to 1,200 μm and a diameter of at least 200 mm, Photosensitive glass ceramic wafer.

5. It includes a plurality of discontinuous crystallized glass regions within a continuous SiO2-Li2O-Al2O3 glass matrix, The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%. An exposed glass wafer characterized in that the crystallized glass region includes a crystal phase having an average particle diameter of 10 nm to 200 nm and has a faster dissolution rate in HF than the glass matrix.

6. A continuous phase including a crystal phase dispersed within a glass matrix of the SiO2-Li2O-Al2O3 system, and a crystallized glass region including a crystal phase that exists discontinuously in multiple numbers and is different from the crystal phase, The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%. The crystal phase dispersed within the glass matrix has an average particle diameter of 10 nm to 200 nm, The continuous phase has a crystallinity of up to 30%, An exposed glass ceramic wafer characterized in that the crystallized glass region has a faster dissolution rate in HF than the continuous phase.

7. It includes a number of via holes formed discontinuously within a glass matrix of the SiO2-Li2O-Al2O3 system. The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio is 14.50 to 20.50 wt%. Photoprocessed glass wafer.

8. It includes a crystal phase dispersed in a glass matrix of the SiO2-Li2O-Al2O3 system and includes a plurality of via holes formed discontinuously. The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%. The crystal phase dispersed within the glass matrix has an average particle diameter of 10 nm to 200 nm, With a crystallinity of up to 30%, Photoprocessed glass ceramic wafer.

9. Obtained by heat treating the photo-processed glass wafer of Article 7, Contains a crystal phase dispersed within a glass matrix of the SiO2-Li2O-Al2O3 system, It includes a number of via holes formed discontinuously, The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, The SiO2 / Li2O molar ratio is 2.30 to 3.50, and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%, The crystal phase is mainly composed of lithium disilicate. The main crystal phase has an average particle size of 10 nm to 200 nm, The average diameter of the via hole is up to 80㎛, and the aspect ratio is up to 1 / 5. The breaking strength is at least 80 MPa, Interposer.

10. Obtained by heat treating the photo-processed glass ceramic wafer of Article 8, Contains a crystal phase dispersed within a glass matrix of the SiO2-Li2O-Al2O3 system, It includes a number of via holes formed discontinuously, The glass matrix comprises 65.0 to 75.0 wt% of SiO2, 5.0 to 9.0 wt% of Al2O3, and 10.0 to 13.5 wt% of Li2O, and the SiO2 / Li2O molar ratio is 2.30 to 3.50 and the SiO2 / Al2O3 molar ratio satisfies 14.50 to 20.50 wt%. The crystal phase is mainly composed of lithium disilicate. The main crystal phase has an average particle size of 10 nm to 200 nm, The degree of crystallinity is at least 30%, The average diameter of the via hole is up to 80㎛, and the aspect ratio is up to 1 / 5. The breaking strength is at least 80 MPa, Interposer.

11. An interposer according to claim 9 or 10, characterized in that it comprises vergilite or spodumene as an additional crystal phase.

12. Obtained by heat treating the photo-processed glass ceramic wafer of clause 7 or 8, A ceramic body having a main crystal phase of lithium disilicate, comprising a plurality of via holes formed discontinuously. The ceramic body comprises an additional crystalline phase selected from vergilite or spodumene, The average diameter of the via hole is up to 80㎛, and the aspect ratio is up to 1 / 5. The breaking strength is at least 80 MPa, Interposer.

13. A semiconductor package including a heat treatment product of the glass substrate of paragraph 1 as a core substrate.

14. A semiconductor package including a heat treatment product of the glass ceramic substrate of paragraph 2 as a core substrate.