MÉTODO DE TESTE DE LEITURA-GRAVAÇÃO, DISPOSITIVO E MEIO DE ARMAZENAMENTO PARA DISPOSITIVO DE ARMAZENAMENTO DE MEMÓRIA

Description

READ-WRITE TEST METHOD, DEVICE AND STORAGE MEDIUM FOR MEMORY STORAGE DEVICE TECHNICAL FIELD

[0001] This application relates to the field of memory technology, particularly to a read-write test method, a device and storage medium for a memory storage device. BACKGROUND

[0002] Memory storage devices (such as DDR), as a common type of memory, often require data coverage testing at each bit position within the memory storage device during read-write testing. However, as the storage capacity of memory storage devices increases, the test duration for each memory storage device also lengthens. Furthermore, with an increase in the number of memory storage devices, the total test duration extends even further. Therefore, in related technologies, there is an urgent need for a read-write testing method for memory storage devices that can optimize the test duration. SUMMARY

[0003] The main objective of the embodiments of this application is to propose a read-write test method, a device and storage medium for memory storage devices that can enhance test efficiency.

[0004] In order to achieve this objective, the first aspect of the embodiments of this application proposes a read-write test method for memory storage devices, wherein the method comprises: acquire the number of data blocks and the number of rows in each data block of a target memory storage device to be tested; Determine the number of test lines to be created based on the number of data blocks, the number of rows, and the read / write type; Create the number of test lines and determine the initial read-write positions for each test line in the row regions of each data block; Synchronously invoke each created test line and output test results. Petition 870260004367, dated 16 / 01 / 2026, page 9 / 77 2 / 20 in order to perform synchronous read-write testing of the corresponding initial read-write positions across each test line.

[0005] In order to achieve the aforementioned objective, the second aspect of the embodiments of this application proposes an electronic device, wherein the electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the read-write test method for memory storage devices described in any item of the first aspect when executing the computer program.

[0006] In order to achieve the aforementioned objective, the third aspect of the embodiments of this application proposes a computer-readable storage medium, wherein the storage medium stores a computer program that implements the read-write test method for memory storage devices described in any item of the first aspect when executed by a processor.

[0007] The read-write test method, a device and storage medium for memory storage devices proposed in this application, configures multiple test lines for a single memory storage device, with each test line capable of testing at least one row region. This enables faster feedback of test results for different storage locations of a single memory storage device by synchronously invoking multiple test lines to test the same memory storage device. Consequently, the probability of early detection of failure points in the memory storage device increases, thereby enhancing test efficiency. As the test efficiency for a single memory storage device is improved, the overall test efficiency is also enhanced when testing multiple memory storage devices.Furthermore, compared to providing a test environment for each individual memory storage device, the testing cost is lower. Therefore, the options in this application offer superior testing efficiency and lower testing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] FIG. 1 is a schematic flow diagram of the read-write test method for memory storage devices provided in this application; Petition 870260004367, dated 16 / 01 / 2026, page 10 / 77 3 / 20

[0009] FIG. 2 is a schematic structural diagram of a memory storage device in one embodiment of the read-write test method for memory storage devices provided in this application;

[0010] FIG. 3 is a schematic diagram illustrating the allocation of test lines on a memory storage device in one embodiment of the read-write test method for memory storage devices provided in this application;

[0011] FIG. 4 is a schematic diagram illustrating the allocation of test lines on a memory storage device in another embodiment of the read-write test method for memory storage devices provided in this application;

[0012] FIG. 5 is a schematic diagram illustrating the allocation of test lines on a memory storage device in yet another embodiment of the read-write test method for memory storage devices provided in this application;

[0013] FIG. 6 is a schematic structural diagram of the corresponding hardware architecture for the read-write test method for memory storage devices provided in this application. DETAILED DESCRIPTION

[0014] In order to make the objectives, technical solutions and advantages of this application clearer and more comprehensive, further detailed descriptions are provided below in conjunction with the attached drawings and embodiments. It should be understood that the specific embodiments described herein are merely intended to explain this application and are not intended to limit its scope.

[0015] It should be noted that although functional modules are divided in the device, schematic diagrams and logical sequences are shown in the flowcharts, in certain cases, the steps illustrated or described may be performed in a different order from the module divisions in the device or the sequences in the flowcharts. The terms first, second, etc. used in the descriptive report, claim and drawings above are intended to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0016] Unless otherwise defined, all technical and scientific terms used in this document have the same meanings as they are commonly understood. Petition 870260004367, dated 16 / 01 / 2026, page 11 / 77 4 / 20 understood by technicians in the technical field to which this application pertains. The terms used herein are solely for the purpose of describing the modalities of this application and are not intended to limit its scope.

[0017] First, let's clarify several terms involved in this request:

[0018] DDR, also known as Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM).

[0019] As a common type of memory, memory storage devices (such as DDR) often require data coverage testing at each bit position during read-write testing. However, as the storage capacity of memory storage devices increases, the number of data blocks contained in each memory storage device and the capacity of each data block will increase correspondingly. At this point, to ensure coverage of each bit position in every data block, the test duration for a single memory storage device will be extended. Furthermore, with an increase in the number of memory storage devices, the total test duration for all memory storage devices will be extended further.Therefore, in related technologies, there is an urgent need for a read-write test method for memory storage devices that can optimize test duration. Based on this, the embodiments of this application provide a read-write test method, device, and storage medium for memory storage devices that can enhance test efficiency.

[0020] The read-write test method, device, and storage medium for memory storage devices provided in the embodiments of this application are specifically described through the following embodiments. First, the read-write test method for memory storage devices in the embodiments of this application is described.

[0021] The read-write test method for memory storage devices in this application can be applied to various general-purpose or specialized computer system configurations or environments, such as personal computers, server computers, portable or handheld devices, tablet-type devices, multiprocessor systems, and so on. This application can be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules comprise Petition 870260004367, dated 16 / 01 / 2026, page 12 / 77 5 / 20 routines, programs, objects, components, data structures, etc., that perform specific tasks or implement specific abstract data types. This application can also be practiced in distributed computing environments, where tasks are executed by remote processing devices connected through a communication network. In distributed computing environments, program modules can be located on both local and remote computer storage media, such as storage devices.

[0022] It may be understood that, with reference to FIG. 1, according to a read-write test method for memory storage devices provided in an embodiment of this application, the method comprises:

[0023] Step S100: acquiring the number of data blocks and the number of rows in each data block of a target memory storage device to be tested;

[0024] Step S200: determine the number of test lines to be created based on the number of data blocks, the number of rows, and the read-write type;

[0025] Step S300: create the determined number of test lines and identify the initial read-write positions for each test line in the row regions of each data block;

[0026] Step S400: synchronously invoke each created test line and output test results, in order to perform synchronous read-write testing of the corresponding initial read-write positions across each test line.

[0027] Therefore, by configuring multiple test lines for a single memory storage device, with each test line capable of testing the row region of at least one row, the feedback of test results for different storage locations of a single memory storage device can be accelerated by synchronously invoking multiple test lines to test the same memory storage device. This increases the probability of early detection of failure points in the memory storage device, thereby enhancing test efficiency. As the test efficiency for a single memory storage device is improved, the overall test efficiency is also enhanced when testing multiple memory storage devices. Furthermore, compared to providing Petition 870260004367, dated 16 / 01 / 2026, page 13 / 77 6 / 20 a test environment for each memory storage device, the test cost is lower. Therefore, the options in this application offer superior test efficiency and lower test costs.

[0028] The read-write test method for memory storage devices in this application is applied to a test platform. Technicians in the field can select devices capable of supporting multiple test lines for testing based on actual test requirements. For example, the test platform is connected to the memory storage device via a System-on-a-Chip (SOC) interface. The test platform creates nine test lines, which synchronously invoke the SOC interface to initiate read-write tests at different addresses of the target memory storage device.

[0029] It can be understood that, for a target memory storage device, each target memory storage device can be divided into multiple data blocks of the same size, with each data block further divided into multiple row regions. Each row region contains the same number of bit positions and can store the same amount of data. For example, as shown in FIG. 2, a DDR is divided into N data blocks, labeled Data Block 1 to Data Block N. Each data block is further divided into K row regions, labeled Row 1 to Row K. Each row region consists of M bit positions, with each bit position corresponding to a storage address for storing one bit of data.

[0030] The read-write type refers to the manner in which the CPU reads from or writes to the data blocks of the memory storage device in practical applications. Read-write types include sequential read-write of individual data blocks and synchronous read-write of multiple data blocks. Different read-write types determine the mapping relationship between test lines and data blocks / row regions within data blocks, as well as the execution order of data blocks and row regions. For example, in sequential read-write mode of individual data blocks, each data block is executed sequentially, with test lines mapping to the row regions of the currently being tested data block.In synchronous read-write mode for multiple data blocks, execution follows the row region numbering, with the data blocks from the row region mapping tested for the rows. Petition 870260004367, dated 16 / 01 / 2026, page 14 / 77 7 / 20 test. One or more of the aforementioned read-write types can be selected for testing based on actual requirements, and field technicians can selectively set them according to their needs.

[0031] The initial read-write position represents the storage address where each test line begins its read or write operation. During actual testing, the initial read-write position can be set randomly or fixed based on the requirement for continuous test data coverage. This ensures that when multiple lines write simultaneously from the initial read-write position, the data blocks where the initial read-write position is located are continuously written with data, and the address coverage on the memory storage device meets the requirements. Technicians in the field can selectively set the initial read-write position according to actual needs and build test data based on the initial read-write position to meet the aforementioned test requirements.

[0032] The read-write test comprises at least one of either a read test or a write test, and field technicians may selectively define it according to actual needs.

[0033] This application does not impose restrictions on how test results are presented. Technicians in the field may selectively define them according to their requirements.

[0034] This request imposes no restrictions on how to obtain the number of data blocks and the number of rows in Step S100. Technicians in the field can selectively set these according to actual needs. For example, when setting a visual view, testers can select the memory type of the target memory storage device to be tested in the visual view. Based on a mapping table in a pre-configured file that associates each memory type with the number of data blocks and the number of rows, the number of data blocks and the number of rows for the target memory storage device can be determined by consulting the table.

[0035] The number of lines is a positive integer greater than 1. This request imposes no restrictions on how to determine the number of lines, and technicians in the field can selectively set it according to actual needs.

[0036] It can be understood that there are multiple types of read-write operations defined, including sequential read-write operations by data block and read-write operations. Petition 870260004367, dated 16 / 01 / 2026, page 15 / 77 8 / 20 synchronous across multiple data blocks. Determining the number of test rows to create based on the number of data blocks, the number of rows, and the read / write type includes: Determine the first number of lines corresponding to sequential read-write by data block based on the number of rows, where each test line corresponds to at least one row region; Determine the second row number corresponding to synchronous read-write across multiple data blocks based on the number of data blocks; Determine the total number of rows based on the first and second row numbers.

[0037] Sequential read-write by data block means that during the process of writing data to the memory storage device, when a data block cannot accommodate additional data and there is still data to be written, data is written to a data block with available space. Synchronous read-write across multiple data blocks means that data blocks for writing can be arbitrarily selected based on the size of the data to be written, and the data to be written is dispersed and written synchronously across the multiple selected data blocks. There are no restrictions on the number of data blocks to be written.For example, if the total amount of data to be written requires the capacity of multiple data blocks, in sequential read-write mode by data block, after selecting a data block, data is first written to that data block until it can no longer accommodate additional data, and then a new data block with available space is selected to write the remaining data. In synchronous read-write mode across multiple data blocks, multiple data blocks can be selected simultaneously, and write operations can be performed on those multiple data blocks simultaneously.

[0038] Determining the number of lines separately for sequential read-write per data block and synchronous read-write across multiple data blocks can enhance test efficiency when conducting use case tests under two different read-write type scenarios.

[0039] It can be understood that the larger of the first and second line counts can be used as the initially created line count. In other modes, a smaller number of lines may be created initially and, if tests Petition 870260004367, dated 16 / 01 / 2026, page 16 / 77 If an additional 9 / 20 is needed after completion, the line count can be increased to meet testing requirements for the specific scenario type.

[0040] This request imposes no restrictions on how to determine the first row count based on the number of rows. Each row may correspond to one test row, or multiple row regions may correspond to one test row. Similarly, there are no restrictions on how to determine the second row count based on the number of data blocks.

[0041] It can be understood that the number of test lines and the initial read-write positions define the regions of the target memory storage device that can read from, or write to, each test line. That is, while determining the line count, the line mapping relationship between each test line and the data blocks / row regions can also be simultaneously determined. The line mapping relationship varies under different read-write types. Additionally, based on the line mapping relationship, test data for each test line can be constructed, enabling automatic testing of the target memory storage device by synchronously invoking each created test line.

[0042] It can be understood that determining the second line count corresponding to synchronous read-write across multiple data blocks based on the number of data blocks comprises: Get the maximum number of writable lines that can be created; Divide the maximum number of writable lines by the number of data blocks and round down the result to determine the first line multiplier if the maximum number of writable lines is greater than or equal to the number of data blocks; Determine the number of writable lines per data block based on the first line multiplier; Determine the target number of writable rows based on the number of writable rows per data block and the number of data blocks. Determine the second row count corresponding to synchronous read-write across multiple data blocks based on the target number of writable rows.

[0043] The maximum number of writable lines represents the number of lines allowed to be created for write testing. In some modes, lines are divided into three independent types based on function: read, write, and compare, to test the target memory storage device. Petition 870260004367, dated 16 / 01 / 2026, page 17 / 77 10 / 20 In this case, the maximum number of writable lines is one-third of the maximum number of lines supported by the test platform. For example, if the test platform supports a maximum of 9 lines, the maximum number of writable lines is 3. It can be understood that in some modes, each line is defined to simultaneously have read, write, and compare functions, in which case the maximum number of writable lines is the maximum number of lines supported by the test platform.

[0044] When the maximum number of writable lines is greater than or equal to the number of data blocks, one test line can be assigned to each data block. The number of lines per data block can be selectively defined according to actual needs. As illustrated in FIG. 4, if the target memory storage device is configured with N data blocks, the corresponding target number of writable lines is N. When each test line has read, write, and compare functions simultaneously, the total number of lines is equal to the target number of writable lines. When test lines are divided based on read, write, and compare functions, the total number of lines is the target number of writable lines multiplied by 3. In other embodiments, as shown in FIG. 5, multiple test lines can also be assigned to each data block. Specifically, as represented in FIG.5. Each data block is configured with j test lines, labeled Line 1 to Line j.

[0045] In this scenario, configuring multiple test lines allows for the early detection of abnormalities during write operations at different memory addresses, thereby facilitating the rapid identification of failure points in the target memory storage device.

[0046] For example, if the maximum number of writable rows is set to 10, the number of data blocks is set to 3, and the number of rows in each row region of the data block is set to 7, the first row multiplier can be determined to be 3. That is, up to 3 test rows can be assigned to a single data block. This request does not impose restrictions on how to determine the number of writable rows per data block based on the first row multiplier; technicians in the field can selectively set them according to actual needs. For example, a configuration view can be provided for the user to determine the setting, or it can be set based on test feedback efficiency.

[0047] It can be understood that determining the second line count Petition 870260004367, dated 16 / 01 / 2026, page 18 / 77 11 / 20 corresponding to synchronous read-write across multiple data blocks based on the number of data blocks also includes: Divide the number of data blocks by the maximum number of recording lines and round the result up to determine the second multiple of lines when the maximum number of recording lines is less than the number of data blocks; Determine the second row count corresponding to synchronous read-write across multiple data blocks based on the second row multiplier.

[0048] For example, if the number of data blocks is 7 and the maximum number of writable rows is 3, rounding up the result of 7 divided by 3 gives a second row multiplier of 3. This means that, starting from the first data block, a test row is assigned every 3 data blocks. Specifically, data blocks 1 to 3 correspond to one test row, data blocks 4 to 6 correspond to another test row, and data block 7 corresponds to a third test row.

[0049] It can be understood that determining the initial read-write positions for each test row within the row regions of respective data blocks comprises: acquire the second-line mapping relationship corresponding to the second line count under synchronous read-write across multiple data blocks; Determine the initial data block for each test row under synchronous read-write across multiple data blocks based on the second-row mapping relationship; Randomly generate a second initial row number for each initial data block; and randomly generate a read-write starting position within the corresponding row region for each second initial row number.

[0050] By randomly generating the second initial row number, a test can be conducted at random positions within the same data block, further ensuring the accuracy of the test.

[0051] The second-line mapping relation represents the range of data blocks and row regions from which each test row can or may write. The initial data block can be determined randomly or sequentially, such as by recording the number of the last data block tested and, Petition 870260004367, dated 16 / 01 / 2026, page 19 / 77 12 / 20 when testing the same target memory storage device again, start testing the data block corresponding to the next number.

[0052] This application does not impose restrictions on how to randomly determine the second initial row number; technicians in the field can define this based on the random function mechanism. In some embodiments, the range for randomly selecting the second initial row number can be determined based on the second row mapping relationship, ensuring that the second initial row numbers for test rows in different data blocks are all different when data is recorded based on the randomly generated second initial row numbers.

[0053] Furthermore, the address range for generating initial read-write positions within the row region can be further limited based on the second-row mapping relationship, ensuring that the length of data written based on the initial read-write positions meets the predefined minimum length requirement.

[0054] It can be understood that determining the first row count corresponding to sequential read-write by data block based on the number of rows comprises: Acquire the maximum number of writable lines that can be created; Divide the number of rows by the maximum number of writable lines and round the result up to determine the third row multiplier; and determine the first row count corresponding to sequential read-write by data block based on the third row multiplier.

[0055] The third row multiplier ensures that the row region of every row in each data block is covered by the test.

[0056] For example, if the number of rows in a single data block is j and the maximum number of writable rows is u, the third row multiplier is the result of rounding up j divided by u. In this case, each test row is mapped to the row region of at least one row.

[0057] For example, with reference to FIG. 3, when the maximum number of writable lines is less than the number of rows in the data blocks (that is, the third row multiplier is an integer greater than 1), multiple row regions correspond to a test line. In other embodiments, when the third multiplier is an integer equal to 1, each row region may correspond to a test line. Petition 870260004367, dated 16 / 01 / 2026, page 20 / 77 13 / 20

[0058] It can be understood that determining the initial read-write positions for each test row within the row regions of respective data blocks comprises: Identify target data blocks from among the various data blocks; acquire the first-line mapping relation corresponding to the first line count; Determine the second initial row numbers for each test row associated with sequential read-write per data block within the target data blocks based on the first-row mapping relationship; and randomly generate initial read-write positions within the row regions corresponding to the second initial row numbers for each test row.

[0059] The target data blocks can be selected or chosen randomly based on the length of the test data to ensure that the data blocks can accommodate the length of the test data to be recorded.

[0060] The first row mapping relationship is determined when the first row count is established and records the mapping relationships between test rows and data blocks, as well as between test rows and row regions, under sequential read-write by data block.

[0061] The second initial row number represents the row number of the row region where the corresponding test line begins recording test data. In some embodiments, when the number of test lines exceeds the number of rows, each test line corresponds to a single row region within a data block, and the second initial row number is the row number of the row region corresponding to each test line. In other embodiments, when the number of test lines is less than the number of rows, a test line corresponds to multiple row regions, and the initial recording position for each test line may be the row number of any row within the corresponding row regions. This application imposes no restrictions on how to determine the second initial row number when multiple rows are involved; technicians in the field may selectively set this based on actual circumstances.

[0062] It can be understood that the test lines comprise read lines, write lines and comparison lines: the read lines, write lines and comparison lines are configured in a correspondence of Petition 870260004367, dated 16 / 01 / 2026, page 21 / 77 14 / 20 one-to-one. Each created test line is invoked synchronously, and the test results are emitted, which includes: Invoke each line of recording to initiate write operations at the corresponding initial read-write positions; Invoke each read line to initiate read operations from the initial read-write positions after the data at each initial read-write position has been written; Invoke the comparison lines to compare the operational data of the corresponding write lines and read lines and output the comparison results.

[0063] By dividing the test lines into three categories, comparisons can be made synchronously after each bit of data is recorded, enabling timely detection of fault locations and thereby improving test efficiency.

[0064] It can be understood that, after the initial read-write positions for the test lines and the target memory storage device have been determined, technicians in the field can construct test data of the same length based on real circumstances. At this point, result verification can be performed based on the test data and data read from the target memory storage device.

[0065] Since this request performs read, write, and compare operations on individual bits across lines, it can additionally detect write anomalies during the write process or the read-write process.

[0066] For illustrative purposes, the read-write test method for memory storage devices in the embodiments of this application is described with reference to Figures 2 to 5, with the specific steps set out as follows:

[0067] S1. display a test view in response to a test initialization request; wherein the test view displays a drop-down box for memory storage device test types, a check box for read-write types and line types;

[0068] S2. determine the target test type, target read-write type, and target line type of the interaction request in response to an interaction request;

[0069] S3. Determine the number of data blocks and the number of rows in the target memory storage device based on the target test type; Petition 870260004367, dated 16 / 01 / 2026, page 22 / 77 15 / 20

[0070] S4. Determine the number of lines based on the number of data blocks, the number of rows, the line type, and the target read-write type, as detailed below.

[0071] When the line type indicates that a single test line simultaneously has read, write, and compare functions: Set the maximum number of lines supported by the test platform as the maximum number of writable lines; Determine the first row count and first row mapping relationship when querying the method for determining row count for sequential read-write by data block described above, when the target read-write type is set to one and is sequential read-write by data block; Determine the second row count and second row mapping relationship when querying the method for determining row count for simultaneous read-write across multiple data blocks described above, when the target read-write type is set to one and is simultaneous read-write across multiple data blocks; To separately determine the first row count and first row mapping relationship for sequential read-write per data block, as well as the second row count and second row mapping relationship for simultaneous read-write across multiple data blocks, when target read-write types are defined, including sequential read-write per data block and simultaneous read-write across multiple data blocks.

[0072] When the line type indicates that a single test line has only one of the following read, write, or compare functions: Define the result of dividing the maximum number of lines supported by the test platform by 3 as the maximum number of writable lines; Determine the first row count and first row mapping relationship when querying the method for determining row count for sequential read-write by data block described above, when the target read-write type is set to one and is sequential read-write by data block; To determine the second row count and second row mapping relationship, consult the method for determining row count for simultaneous read-write operations across multiple data blocks described above. Petition 870260004367, dated 16 / 01 / 2026, page 23 / 77 16 / 20 when the target read-write type is set to one and is simultaneous read-write across multiple data blocks; Separately determine the row count and row mapping ratio for sequential read-write per data block, as well as the row count and row mapping ratio for simultaneous read-write across multiple data blocks, when target read-write types are defined, including sequential read-write per data block and simultaneous read-write across multiple data blocks. In this case, the number of test rows to be created can be set to the maximum of the first row count and the second row count.

[0073] S4. Based on the number of rows, test rows are created; and the initial read-write positions for each test row of the row regions of the respective data blocks according to the row mapping ratio are determined.

[0074] S5. Based on each initial read-write position, the test data for the target test cases is constructed and displayed.

[0075] S6. Each created test line is invoked synchronously, the test results are emitted, the test results are compared with the test data, it is determined whether each target test case was executed successfully, and, if the execution fails, the failed memory addresses are displayed.

[0076] The modalities of this application also provide an electronic device. The electronic device comprises a memory and a processor. The memory stores computer programs and, when the processor executes the computer programs, it implements the aforementioned read-write test method for memory storage devices. The electronic device can be any intelligent terminal, including, but not limited to, tablet computers and in-vehicle computers.

[0077] Please refer to FIG. 6, which illustrates the hardware structure of an electronic device in another embodiment. The electronic device comprises: a 601 processor, which may be implemented using a general-purpose CPU (Central Processing Unit), a microprocessor, an Application-Specific Integrated Circuit (ASIC), or one or more integrated circuits; wherein the 601 processor is configured to execute programs relevant to implementing the technical solutions provided by the embodiments of this application; a 602 memory, which could be a NAND flash, in which codes of Petition 870260004367, dated 16 / 01 / 2026, page 24 / 77 17 / 20 relevant programs are stored in memory 602, and processor 601 invokes and executes these codes to implement the read-write test method for memory storage devices as described in the embodiments of this application; an input / output interface 603, which is configured to handle input and output of information; a 604 communication interface, which is configured to enable communication interactions between this device and other devices; wherein communication can be achieved through wired means (e.g., USB, network cables, etc.) or wireless means (e.g., mobile networks, Wi-Fi, Bluetooth, etc.); A bus 605, which transmits information between various components of the device (for example, the processor 601, memory 602, input / output interface 603, and communication interface 604).

[0078] Processor 601, memory 602, input / output interface 603, and communication interface 604 are interconnected within the device via bus 605 for communication.

[0079] The embodiments of this application also provide a computer-readable storage medium, which is a non-transient, computer-readable storage medium that stores computer programs. When executed by a processor, these computer programs implement the aforementioned read-write test method for memory storage devices.

[0080] As a computer-readable non-transient storage medium, memory can be used to store non-transient software programs and computer-executable non-transient programs. Additionally, memory may comprise high-speed random-access memory and may also comprise non-transient memories, such as at least one disk storage device, flash memory device, or other solid-state non-transient storage device. In some implementations, memory may optionally comprise memory located remotely from the processor, and such remote memories may be connected to the processor via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0081] The methods described in this application are intended to provide a Petition 870260004367, dated 16 / 01 / 2026, page 25 / 77 18 / 20 A clearer explanation of the technical solutions provided by the modalities of this application does not constitute limitations on the technical solutions provided by the modalities of this application. Those skilled in the art will recognize that, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the modalities of this application are equally applicable to similar technical problems.

[0082] Those skilled in the art may understand that the technical solutions represented in the figures do not constitute limitations on the embodiments of this application. They may comprise more or fewer steps than those shown, combine certain steps, or have different steps.

[0083] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, meaning they may be located in one place or distributed across multiple network units. Depending on actual needs, some or all of the modules may be selected to achieve the objectives of the embodiments in this application.

[0084] Those of ordinary skill in the art may understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in systems and devices, may be implemented as software, firmware, hardware, or a suitable combination thereof.

[0085] The terms first, second, third, fourth, etc. (if present) in the description and accompanying figures of this application are used to distinguish similar objects and do not necessarily indicate a specific order or sequence. It should be understood that data used in this way may be interchanged as appropriate, so that the embodiments of this application described herein may be implemented in orders different from those illustrated or described herein. Furthermore, the terms includes and has, as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device comprising a series of steps or units is not necessarily limited to those clearly listed steps or units, but may include other steps or units that are not clearly listed or inherent in such processes, methods, products, or devices.

[0086] It should be understood that in this request, at least one (item) refers to one or more and multiple refers to two or more. The term and / or is used for Petition 870260004367, dated 16 / 01 / 2026, p. 26 / 77 19 / 20 describes the relationship between associated objects and indicates that three relationships can exist, for example, A and / or B can mean: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character / usually indicates that the associated objects before and after it have an "or" relationship. At least one (item) or similar expressions refer to any combination of these items, including single or multiple items. For example, at least one (item) of a, b, or c can mean a, b, c, aeb, aec, bec, or aebec, where a, bec can be singular or plural.

[0087] In the various embodiments provided by this application, it should be understood that the devices and methods disclosed may be implemented in other ways. For example, the device embodiments described above are merely illustrative. For instance, the division of the aforementioned units is merely a logical functional division, and in actual implementations, there may be other methods of division, such as multiple units or components being combined or integrated into another system, or some features being ignored or not implemented. Additionally, the coupling or direct coupling or communication connection shown or discussed between each may be indirect coupling or communication connection through some interfaces, devices or units, and may be electrical, mechanical or other forms.

[0088] The units described as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, meaning they may be located in one place or distributed across multiple network units. Depending on actual needs, some or all of the units may be selected to achieve the objectives of the embodiments in this application.

[0089] Furthermore, in several embodiments of this application, the functional units may be integrated into a processing unit, or each unit may exist in a physically separate manner, or two or more units may be integrated into a unit. The aforementioned integrated units may be implemented in hardware or as software functional units.

[0090] If the integrated unit is implemented as a functional software unit and sold or used as a standalone product, it may be stored on a computer-readable storage medium. Based on this understanding, the technical solutions of this application, or the parts contributing to the existing technology, or all or part of the technical solutions, Petition 870260004367, dated 16 / 01 / 2026, page 27 / 77 20 / 20 may be incorporated in the form of a software product. This computer software product is stored on a storage medium and comprises multiple instructions to enable a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods in various embodiments of this application. The aforementioned storage medium comprises various media that may store programs, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0091] The above descriptions of the preferred embodiments of this application with reference to the accompanying figures are not intended to limit the scope of the rights of the embodiments of this application. Any modifications, equivalent substitutions and enhancements made within the scope and spirit of the embodiments of this application by those skilled in the art shall be covered by the scope of the rights of the embodiments of this application.

Claims

1. A read-write test method for a memory storage device characterized by comprising: obtaining a number of data blocks from a target memory storage device to be tested and a number of rows in each of the data blocks; determining a number of test lines to be created based on the number of data blocks, the number of rows, and the read-write type; creating the number of test lines and determining initial read-write positions for each of the test lines from row regions of each of the data blocks; synchronously invoking each of the created test lines and outputting the test results, so as to perform synchronous read-write testing of corresponding initial read-write positions through each of the test lines; wherein the test lines comprise read lines, write lines, and comparison lines;The read lines, write lines, and comparison lines are provided in a one-to-one correspondence; wherein multiple read-write types are provided, and the multiple read-write types comprise block-by-block read-write and multi-block read-write; the determination of the number of test lines to be created based on the number of data blocks, the number of rows, and the read-write type comprises: determining an initial number of lines corresponding to block-by-block read-write based on the number of rows, wherein each test line corresponds to the row region of at least one row; obtaining the maximum number of write lines that are created; the maximum number of writable lines is one-third of the maximum supported number of lines;Divide the maximum number of write lines by the number of data blocks and round down the result to determine the first line multiple when the maximum number of write lines is greater than or equal to the number of data blocks; determine the number of data block write lines for a single data block based on the first line multiple; determine the target number of write lines based on the number of data block write lines and the number of data blocks; determine the second number of lines corresponding to multi-block read-write based on the target number of write lines; determine a number of lines based on the first number of lines and the second number of lines;where the synchronous invocation of each of the created test lines and the emission of the test results comprises: invoking each of the write lines to perform write operations on the corresponding initial read-write positions; invoking each of the read lines to perform read operations on the initial read-write positions after the data in each of the initial read-write positions has been written; invoking the comparison lines to compare the operational data of the write lines and corresponding read lines and emitting the comparison results.

2. A read-write test method for a memory storage device according to claim 1, wherein the method is further characterized by comprising: dividing the number of data blocks by the maximum number of write lines and rounding up the result to determine the second line multiple when the maximum number of write lines is less than the number of data blocks; determining the second line number corresponding to the read-write of multiple blocks based on the second line multiple.

3. Read-write test method for the memory storage device, according to claim 1, characterized in that the determination of the initial read-write positions for each of the test lines of the row regions of each of the data blocks comprises: obtaining the second-row mapping relation corresponding to the second row number under multi-block read-write; determining the initial data blocks for each of the test lines under multi-block read-write based on the second-row mapping relation; randomly generating the second initial row numbers for each of the initial data blocks; randomly generating an initial read-write position of the corresponding row region for each of the second initial row numbers.

4. A read-write test method for a memory storage device, according to claim 1, characterized in that determining the first number of lines corresponding to block-by-block read-write based on the number of rows comprises: obtaining the maximum number of write lines that are created; dividing the number of rows by the maximum number of write lines and rounding up the result to determine the third line multiple; determining the first number of lines corresponding to block-by-block read-write based on the third line multiple.

5. A read-write test method for the memory storage device, according to claim 4, characterized in that the determination of the initial read-write positions for each of the test lines of the row regions of each of the data blocks comprises: identifying target data blocks of each of the data blocks; obtaining the first-row mapping relation corresponding to the first row number; determining the second initial row numbers for each test line corresponding to block-by-block read-write in the target data blocks based on the first-row mapping relation; randomly generating the initial read-write positions in the row regions corresponding to the second initial row numbers for each of the test lines.

6. Electronic device, wherein the electronic device is characterized by comprising a memory and a processor, the memory storing a computer program, and the processor, when executing the computer program, implements the read-write test method for a memory storage device, as defined in claim 1.

7. Computer-readable storage medium, wherein the storage medium is characterized by storing a computer program, wherein the computer program, when executed by a processor, implements the read-write test method for a memory storage device as defined in claim 1.

Images