Broadband Impedance Matching Module and Device Comprising the Same

Abstract

The embodiment of the present invention relates to the field of radio frequency impedance matching technology, and discloses a broadband impedance matching module and a device containing the same. The broadband impedance matching module includes: an impedance matching network, M radio frequency switches, and an impedance matching device connected to each radio frequency switch; M is a natural number greater than or equal to 1; the M radio frequency switches and the impedance matching devices connected to each radio frequency switch are all connected to the impedance matching network; each radio frequency switch is used to connect to a control unit, and under the control of the control unit, the impedance matching device connected to each radio frequency switch is connected to or disconnected from the impedance matching network to adjust the matching impedance of the broadband impedance matching module. By adopting the embodiment of the present invention, the matching impedance can be adjusted according to actual needs, so that it has a certain degree of versatility, which is conducive to improving the development efficiency of radio frequency front-end products.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of radio frequency impedance matching, and in particular to a broadband impedance matching module and a device including the same. Background Art

[0002] With the rapid development of communication technology, people's requirements for communication speed are getting higher and higher. However, with the increase in frequency and the system-level design difficulties brought about by complex communication systems, new challenges have been posed to RF chips. For example, in the design of 5Gsub-6GHz RF chips, due to its broadband characteristics, it is necessary to be able to perform broadband matching of RF matching. In order to achieve matching between high and low impedance, matching design can be carried out through passive inductors and capacitors, and wide bandwidth is mainly achieved through multi-level networks. Please refer to Figures 1a to 1c The two-stage matching shown is shown. To achieve wider bandwidth, more stages of matching can be used. Figure 2 At the same time, according to different needs, low-pass, high-pass, or a combination of low-pass and high-pass can be used to achieve it.

[0003] The inventors have discovered that the existing technology has at least the following problems: Multi-stage LC matching is a commonly used method, especially in RF front-end products for wireless communications. However, due to the parasitic effects of the components themselves, their quality factor (Q) is poor, so multi-stage LC matching will cause high losses. At the same time, due to the large size of the components, multi-stage matching also occupies a large area, posing a challenge to the miniaturization of RF design. In addition, once the design of the matching network is finalized, it is impossible to automatically adjust the matching according to the application scenario in the product. Please refer to Figure 3 The gallium arsenide HBT (heterojunction bipolar transistor, HBT) power amplifier design shown here for high-band (2.3GHz-2.7GHz) LTE (Long Term Evolution) applications utilizes a two-stage matching network. Due to the high frequency and wide bandwidth, a two-stage low-pass matching network is used. However, due to the poor quality factor of the inductor at high frequencies, the insertion loss of the matching network alone is approximately 1dB. Furthermore, this matching module lacks flexibility, making it impossible to adjust the circuit in actual applications. Summary of the Invention

[0004] One of the purposes of the embodiments of the present invention is to provide a broadband impedance matching module and a device containing the same, so that the matching impedance can be adjusted according to actual needs, thereby making it have a certain versatility, which is conducive to improving the development efficiency of RF front-end products.

[0005] To solve the above technical problems, an embodiment of the present invention provides a broadband impedance matching module for forming an impedance matching network, comprising: M radio frequency switches and impedance matching devices connected to each radio frequency switch; M is a natural number greater than or equal to 1; each radio frequency switch is used to connect to a control unit, and under the control of the control unit, the impedance matching device connected to each radio frequency switch is connected to or disconnected from the impedance matching network to adjust the matching impedance of the broadband impedance matching module.

[0006] An embodiment of the present invention further provides a broadband impedance matching device, comprising: a control unit and the broadband impedance matching module as described above; the control unit is connected to each radio frequency switch in the broadband impedance matching module; the control unit is configured to generate multiple control signals according to the current frequency point, and the multiple control signals are respectively used to control the on and off of each radio frequency switch, so that the broadband impedance matching module provides the matching impedance required for the current frequency point.

[0007] Compared with the prior art, the embodiment of the present invention has a broadband impedance matching module including multiple radio frequency switches and impedance matching devices connected to each radio frequency switch, and each radio frequency switch is also connected to a control unit, and under the control of the control unit, the impedance matching devices connected to each radio frequency switch are connected to or disconnected from the impedance matching network of the broadband impedance matching module. Since the matching impedance of the entire broadband impedance matching module will change with the change of the connection status of the impedance matching devices connected to each radio frequency switch and the impedance matching network, the matching impedance of the broadband impedance matching module can be adjusted according to the frequency points that actually need to be matched, so that the broadband impedance matching module has strong versatility, and developers can flexibly configure the broadband impedance matching module according to actual needs, which is conducive to improving the development efficiency of radio frequency front-end products.

[0008] In addition, the impedance matching devices connected to each RF switch are all capacitor devices, wherein each RF switch is connected in series with at least one capacitor to form a switch capacitor branch, and each switch capacitor branch is connected in parallel to form an adjustable capacitor group.

[0009] In addition, the adjustable capacitor group includes a first adjustable group and a second adjustable group; the broadband impedance matching module also includes a first inductor; the output end of the first inductor is connected to the first end of the first adjustable group; the second end of the first adjustable group is connected to the first end of the second adjustable group, the second end of the second adjustable group is grounded, and the second end of the first adjustable group and the first end of the second adjustable group are also used to connect to the input end of the load, so that a first-level impedance matching circuit can be formed by the first inductor, the first adjustable group and the second adjustable group. At the same time, by adjusting the first adjustable group and the second adjustable group, the first-level impedance matching circuit has the impedance matching performance of a second-level impedance matching circuit, which is not only beneficial to reducing insertion loss, but also because the use of inductance is reduced, it can also avoid performance deterioration caused by the deterioration of the quality factor of the inductor under high-frequency conditions.

[0010] In addition, the broadband impedance matching module also includes a second inductor and a first capacitor; the output end of the second inductor is connected to the input end of the first inductor; the first end of the first capacitor is connected to the output end of the second inductor, and the second end of the first capacitor is grounded, thereby forming a two-stage impedance matching circuit, and the two-stage impedance matching circuit has the performance of a three-stage impedance matching circuit, which is conducive to reducing losses.

[0011] In addition, the broadband impedance matching module also includes a second capacitor; the first end of the second capacitor is connected to the input end of the first inductor, and the second end of the second capacitor is grounded, thereby forming a π-type two-stage impedance matching circuit, and the two-stage impedance matching circuit has the matching performance of a three-stage impedance matching circuit, which is conducive to reducing losses.

[0012] In addition, the adjustable capacitor group includes a third adjustable group and a fourth adjustable group; the broadband impedance matching module includes a third inductor and a fourth inductor; the third inductor, the fourth inductor and the third adjustable group are connected in series in sequence; the first end of the fourth adjustable group is connected to the output end of the third inductor, and the second end of the fourth adjustable group is grounded, thereby forming a two-stage T-type impedance matching circuit, and the two-stage impedance matching circuit has the matching performance of a three-stage impedance matching circuit, which is conducive to reducing losses.

[0013] In addition, the M radio frequency switches are manufactured using a chip process to form a radio frequency switch chip, thereby saving matching circuit area and helping to reduce product design complexity.

[0014] In addition, the chip process includes any one of the following: silicon on insulator SOI and pseudo modulation doped heterojunction field effect transistor PMENT, thereby improving product performance and economy.

[0015] In addition, the capacitor connected to the RF switch is formed on the RF switch chip. Since the capacitor integrated on the RF switch chip has significantly reduced parasitic parameters compared to passive capacitor components, it is beneficial to improve product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplifications do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements. Unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0017] Figures 1a to 1c A schematic diagram of a two-stage impedance matching circuit in the prior art;

[0018] Figure 2 This is a circuit diagram of a three-stage impedance matching circuit in the prior art;

[0019] Figure 3 It is a circuit diagram of a power amplifier with a two-stage impedance matching circuit in the prior art;

[0020] Figure 4 This is a circuit diagram of a broadband impedance matching module according to a first embodiment of the present invention;

[0021] Figure 5 Is a Figure 4 The circuit diagram of the power amplifier of the broadband impedance matching module shown;

[0022] Figure 6 This is a circuit diagram of a broadband impedance matching module according to a second embodiment of the present invention;

[0023] Figure 7 This is a circuit diagram of a broadband impedance matching module according to a third embodiment of the present invention;

[0024] Figure 8 FIG. 4 is a circuit diagram of a broadband impedance matching module according to a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0025] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, each embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will appreciate that in each embodiment of the present invention, many technical details are provided to help readers better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present application can still be implemented.

[0026] The first embodiment of the present invention relates to a broadband impedance matching module for forming an impedance matching network, which is suitable for impedance matching in various application scenarios such as active and passive, such as power amplifiers, low-noise amplifiers, and mixers in active devices, filters in passive devices, and antenna impedance matching. It should be understood that this embodiment does not impose specific restrictions on its application scenarios. The broadband impedance matching module includes: M radio frequency switches and impedance matching devices connected to each radio frequency switch, where M is a natural number greater than or equal to 1. Each radio frequency switch is used to connect to a control unit, and under the control of the control unit, the impedance matching devices connected to each radio frequency switch are connected to or disconnected from the impedance matching network to adjust the matching impedance of the broadband impedance matching module. Compared with the prior art, the embodiment of the present invention is that the broadband impedance matching module includes multiple radio frequency switches and impedance matching devices connected to each radio frequency switch, and each radio frequency switch is also connected to a control unit, and under the control of the control unit, the impedance matching devices connected to each radio frequency switch are connected to or disconnected from the impedance matching network of the broadband impedance matching module. Since the matching impedance of the entire broadband impedance matching module will change with the change of the connection status of the impedance matching devices connected to each radio frequency switch and the impedance matching network, the matching impedance of the broadband impedance matching module can be adjusted according to the frequency point that actually needs to be matched, so that the broadband impedance matching module has strong versatility, so that developers can flexibly configure the broadband impedance matching module according to actual needs, thereby helping to improve the development efficiency of radio frequency front-end products. The following is a detailed description of the implementation details of the broadband impedance matching module of this embodiment. The following content is only the implementation details provided for the convenience of understanding and is not necessary for the implementation of this solution.

[0027] In this embodiment, the impedance matching devices connected to each RF switch are all capacitor devices, and each RF switch is connected in series with at least one capacitor to form a switch capacitor branch, and each switch capacitor branch is connected in parallel to form an adjustable capacitor group. In some examples, the impedance matching device connected to the RF switch can also be an inductor device, for example, Figure 1b Or the inductor in the two-stage impedance matching circuit shown in 1c is connected in series with the RF switch and then grounded. This embodiment does not impose any specific restrictions on the type of impedance matching device connected to the RF switch.

[0028] In practical applications, the above adjustable capacitor group can be divided into a first adjustable group and a second adjustable group, and a first-level impedance matching circuit can be constructed by using the first adjustable group, the second adjustable group and other impedance matching components in the broadband impedance matching module. Figure 4 The adjustable capacitor group includes a first adjustable group 11 and a second adjustable group 12. The first adjustable group 11 and the second adjustable group 12 each include a plurality of switch capacitor branches, and each switch capacitor branch includes: an impedance matching capacitor C sAnd with the C s RF switch K connected in series. In this embodiment, the broadband impedance matching module 1 further includes, for example, a first inductor L1, the input end of the first inductor L1 being connected to the output end of the signal source, the output end of the first inductor L1 being connected to the first end of the first adjustable group L1, the second end of the first adjustable group 11 being connected to the first end of the second adjustable group 12, the second end of the second adjustable group 12 being grounded, and the second end of the first adjustable group 11 and the first end of the second adjustable group 12 being further used to connect to the input end of the load. In this way, the first inductor L1, the first adjustable group 11, and the second adjustable group 12 can form a first-level impedance matching circuit. It should be noted that the structures of the first adjustable group 11 and the second adjustable group 12 can be exactly the same, that is, the number and structure of the switched capacitor branches of the first adjustable group 11 are the same as the number and structure of the switched capacitor branches of the second adjustable group 12. In some examples, the first adjustable group and the second adjustable group can also adopt different structures, for example, the number of switched capacitor branches of the first adjustable group 11 is different from that of the second adjustable group 12, and this embodiment does not impose any specific restrictions on this. It should be noted that, the more switching capacitor branches there are in the first adjustable group 11 and the second adjustable group 12, the larger the impedance adjustment range that can be provided by the first adjustable group 11 and the second adjustable group 12, which is conducive to achieving optimized impedance matching at more frequency points. This embodiment does not impose any specific restrictions on the number of switching capacitor branches in the first adjustable group and the second adjustable group.

[0029] In this embodiment, the first inductor L1 and the first adjustable group 11 are connected in series to form an equivalent inductor. The equivalent inductor can be adjusted by adjusting the capacitor device connected to the impedance matching network of the first adjustable group 11. The second adjustable group 12 is also a variable capacitor. Therefore, by adjusting the equivalent inductor and the second adjustable group 12, impedance matching at different frequency points can be achieved, so that the frequency points required by the design can achieve better matching. As the number of frequency points that can be optimized for matching increases, a broadband matching effect is also achieved. For example, in the prior art, an impedance matching circuit from 3 ohms to 50 ohms generally adopts multi-stage matching, such as first matching to an intermediate impedance and then matching to the final required impedance. The existing multi-stage matching has the problem of high loss. By using the broadband impedance matching module of this embodiment, the equivalent inductance and the impedance of the variable capacitor connected to the equivalent inductance can be changed by adjusting the first adjustable group 11 and the second adjustable group 12, thereby directly achieving any impedance matching between 3 ohms and 50 ohms. That is, the first-stage impedance matching circuit implemented by the broadband impedance matching module of this embodiment can replace the existing two-stage impedance matching circuit, and has better matching performance and lower loss.

[0030] See also Figure 5The circuit diagram of the power amplifier using the aforementioned wide-band impedance matching module 1 with a first-level impedance matching circuit is shown, wherein C12 is a decoupling capacitor, L11 (RF_Choke) is a radio frequency choke, BJT is an NPN type radio frequency power amplifier tube, and C11 is a DC blocking capacitor. The implementation method of the radio frequency power amplifier circuit is well known to those skilled in the art and will not be repeated here.

[0031] In addition, in some examples, the adjustable capacitor bank can also replace a capacitor device in an existing impedance matching circuit as a whole.

[0032] In this embodiment, the RF switch can be implemented using methods well known to those skilled in the art, such as high-speed silicon PIN diodes and gallium arsenide PHENT (Pseudomorphic High Electron Mobility Transistor, PHEMT for short). This embodiment does not impose any specific restrictions on the implementation method of the RF switch.

[0033] Furthermore, in one example, all RF switches in the broadband impedance matching module can be implemented using a chip process, that is, all RF switches can be fabricated in an RF switch chip. The chip process can be any of the following: silicon-on-insulator (SOI) and PMENT. This embodiment does not impose specific restrictions on the chip process. By fabricating multiple RF switches in the broadband impedance matching module into an RF switch chip, the matching circuit area can be smaller, the cost can be lower, and the performance can be improved.

[0034] Furthermore, the capacitors connected to the RF switch can also be formed on the RF switch chip. That is, the adjustable capacitor groups in the broadband impedance matching module can be fabricated on the RF switch chip. For example, all components in the first adjustable group and the second adjustable group can be fabricated on the RF switch chip. Because the parasitic parameters of capacitors integrated on the RF switch chip are smaller than those of passive capacitor components, impedance matching performance can be further improved.

[0035] Compared with the prior art, this embodiment can change the impedance matching device connected to the impedance matching network by turning on and off the RF switch in the broadband impedance matching module, thereby adjusting the matching impedance of the broadband impedance matching module. Therefore, the broadband impedance matching module of this embodiment can be adjusted according to the specific application scenario, thereby improving the flexibility of product development and design, and improving development efficiency. At the same time, since the matching impedance of the broadband impedance matching module can be flexibly adjusted, the matching of each frequency point can be optimized, and the broadband matching effect that can only be achieved by the existing high-level impedance matching circuit can be achieved through a smaller number of impedance matching circuits, thereby further reducing losses and obtaining a wider bandwidth while reducing losses. In addition, since all the devices in the adjustable capacitor group in the broadband impedance matching module of this embodiment are formed on the RF switch chip, the area of the matching circuit can be further reduced, reducing the complexity of the RF product design.

[0036] The second embodiment of the present invention relates to a broadband impedance matching module. The second embodiment is substantially similar to the first embodiment, with the primary difference being that, in the first embodiment, the broadband impedance matching module serves as a reconfigurable primary impedance matching circuit structure based on an RF switch. In the second embodiment, the broadband impedance matching module serves as a reconfigurable secondary impedance matching circuit, thus enriching the embodiments of the present invention.

[0037] See also Figure 6 The broadband impedance matching module of this embodiment includes a plurality of RF switches K and an impedance matching device connected to each RF switch K (i.e., an impedance matching capacitor C s ). Among them, each impedance matching capacitor C s A switching capacitor branch is formed in series with each RF switch K, and each switching capacitor branch is connected in parallel to form an adjustable capacitor group. Specifically, the adjustable capacitor group includes a first adjustable group 11 and a second adjustable group 12. The broadband impedance matching module also includes: a first inductor L1, a second inductor L2 and a first capacitor C1, wherein the second inductor L2, the first inductor L1 and the first adjustable group 11 are connected in series in sequence, the first end of the first capacitor C1 is connected to the output end of the second inductor L2, the second end of the first capacitor C1 is grounded, the first end of the second adjustable group 11 is connected to the second end of the first adjustable group 11, the second end of the second adjustable group 12 is grounded, and the second end of the first adjustable group 11 and the first end of the second adjustable group 12 are both connected to the input end of the load. Each RF switch K is connected to a control unit (not shown), and under the control of the control unit, the impedance matching capacitor C connected to each RF switch K is connected. s Connect or disconnect the impedance matching network to adjust the matching impedance of the broadband impedance matching module.

[0038] In this embodiment, the second inductor L2 and the first capacitor C1 form the first-stage impedance matching circuit of the broadband impedance matching module, and the first inductor L1, the first adjustable group 11, and the second adjustable group 12 form the second-stage impedance matching circuit. Since the second-stage impedance matching circuit can replace the existing two-stage impedance matching circuit, the broadband impedance matching module of this embodiment, although formally a two-stage impedance matching circuit, can actually achieve the broadband impedance matching performance of the existing three-stage impedance matching circuit, for example, it can achieve the following Figure 2 The matching capability of the three-stage impedance matching circuit is shown.

[0039] Compared with the prior art, this embodiment provides a two-stage reconfigurable broadband impedance matching circuit, which can achieve the matching effect of the existing three-stage impedance matching circuit, but with better performance and lower loss.

[0040] The third embodiment of the present invention relates to a broadband impedance matching module. The third embodiment provides a two-stage impedance matching circuit in parallel with the second embodiment, thereby further enriching the embodiments of the present invention.

[0041] See also Figure 7 The broadband impedance matching module of this embodiment includes a plurality of RF switches K and an impedance matching device (i.e., an impedance matching capacitor Cs) connected to each RF switch K. Among them, each impedance matching capacitor Cs is connected in series with each RF switch K to form a switch capacitor branch, and each switch capacitor branch is connected in parallel to form an adjustable capacitor group. Specifically, the adjustable capacitor group includes a third adjustable group 13 and a second adjustable group 14. The broadband impedance matching module also includes: a third inductor L13 and a fourth inductor L4. The third inductor L3, the fourth inductor L4 and the third adjustable group 13 are connected in series in sequence, the first end of the fourth adjustable group 14 is connected to the output end of the third inductor L3, and the second end of the fourth adjustable group 14 is grounded. Each RF switch K is used to connect to a control unit (not shown), and under the control of the control unit, the impedance matching capacitor Cs connected to each RF switch K is connected to or disconnected from the impedance matching network to adjust the matching impedance of the broadband impedance matching module.

[0042] In this embodiment, the third inductor L3, the fourth inductor L4, the third adjustable group 13 and the fourth adjustable group 14 form a two-stage reconfigurable T-type impedance matching circuit, which can replace the existing three-stage impedance matching circuit, for example, Figure 2 The matching of the three-stage impedance matching circuit is shown.

[0043] Compared with the prior art, this embodiment provides a two-stage reconfigurable T-shaped broadband impedance matching circuit, which can achieve the matching effect of the existing three-stage impedance matching circuit, but with better performance and lower loss.

[0044] The fourth embodiment of the present invention relates to a broadband impedance matching module. The fourth embodiment provides a two-stage impedance matching circuit in parallel with the second and third embodiments, thereby further enriching the embodiments of the present invention.

[0045] See also Figure 8 The broadband impedance matching module of this embodiment includes a plurality of RF switches K and an impedance matching device connected to each RF switch K (i.e., an impedance matching capacitor C s ). Among them, each impedance matching capacitor C s A switching capacitor branch is formed in series with each RF switch K, and each switching capacitor branch is connected in parallel to form an adjustable capacitor group. Specifically, the adjustable capacitor group includes a first adjustable group 11 and a second adjustable group 12. The broadband impedance matching module also includes: a first inductor L1 and a second capacitor C2. Among them, the first end of the second capacitor C2 is connected to the input end of the first inductor L1, the second end of the second capacitor C2 is grounded, the output end of the first inductor L1 is connected to the first end of the first adjustable group 11, the second end of the first adjustable group 11 is connected to the first end of the second adjustable group 12, the second end of the second adjustable group 12 is grounded, and the second end of the first adjustable group 11 and the first end of the second adjustable group 12 are both connected to the input end of the load. Each RF switch K is used to connect to a control unit (not shown), and under the control of the control unit, the impedance matching capacitor C connected to each RF switch K is connected. s Connect or disconnect the impedance matching network to adjust the matching impedance of the broadband impedance matching module.

[0046] In this embodiment, the second capacitor C2, the first inductor L1, the first adjustable group 11 and the second adjustable group 12 form a reconfigurable two-stage π-type impedance matching circuit. The π-type impedance matching circuit can replace the Figure 2 The three-stage impedance matching circuit shown.

[0047] It should be noted that, in actual applications, those skilled in the art can also flexibly combine the adjustable capacitor group with other impedance matching devices (i.e., capacitors and / or inductors) so that the broadband impedance matching module of this embodiment can achieve more levels of impedance matching. The present invention does not limit the specific structure of the broadband impedance matching module.

[0048] Compared with the prior art, this embodiment provides a two-stage reconfigurable π-type broadband impedance matching circuit, which can achieve the matching effect of the existing three-stage impedance matching circuit, but with better performance and lower loss.

[0049] A fifth embodiment of the present invention relates to a broadband impedance matching device, comprising: a control unit and a broadband impedance matching module as described in the first, second, third, or fourth embodiments. The control unit is connected to each RF switch in the broadband impedance matching module and is configured to generate multiple control signals based on the current frequency point. The multiple control signals are used to control the on and off of each RF switch, so that the broadband impedance matching module provides the matching impedance required for the current frequency point. Specifically, the control unit is, for example, a baseband chip in a radio frequency electronic device. This embodiment does not impose any specific restrictions on the type of control unit.

[0050] In some examples, some or all of the RF switches in the broadband impedance matching module and the capacitor devices that form the switch capacitor branches with each RF switch can be formed on a single RF chip together with the control unit, thereby further improving the integration level and helping to reduce the complexity of RF product design.

[0051] Compared to the prior art, this embodiment uses a control unit to control the on and off of the RF switch to change the impedance matching device connected to the impedance matching network, thereby adjusting the matching impedance. Therefore, the broadband impedance matching device of this embodiment can be adjusted according to specific application scenarios, thereby improving the flexibility of product development and design, and improving development efficiency. At the same time, because the matching impedance of the broadband impedance matching device can be flexibly adjusted, it can optimize the matching of each frequency point and achieve the broadband matching effect that can only be achieved with a large number of matching circuits with fewer stages, thereby further reducing losses and achieving a wider bandwidth while reducing losses.

[0052] It is worth noting that all modules involved in this embodiment are logical modules. In actual applications, a logical unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, to highlight the innovations of the present invention, this embodiment does not include units that are not closely related to solving the technical problems proposed by the present invention. However, this does not mean that other units do not exist in this embodiment.

[0053] Those skilled in the art will appreciate that the above-mentioned embodiments are specific examples for implementing the present invention, and that in actual applications, various changes may be made thereto in form and detail without departing from the spirit and scope of the present invention.

Claims

1. A power amplifier, characterized in that: The invention comprises a broadband impedance matching module and a radio frequency power amplifier circuit, wherein the broadband impedance matching module is connected to the radio frequency power amplifier circuit, and the broadband impedance matching module is used to form an impedance matching network, and the broadband impedance matching module comprises: M radio frequency switches and impedance matching devices connected to each radio frequency switch; M is a natural number greater than or equal to 1; Each RF switch is used to connect to a control unit, and the control unit is configured to generate multiple control signals according to the current frequency point of the RF power amplification circuit. The multiple control signals are used to control the on and off of each RF switch, so that the broadband impedance matching module provides the matching impedance required by the current frequency point of the RF power amplification circuit; Under the control of the control unit, the impedance matching devices connected to the radio frequency switches are connected to or disconnected from the impedance matching network to adjust the matching impedance of the broadband impedance matching module; The impedance matching devices connected to each RF switch are all capacitor devices, wherein each RF switch is respectively connected in series with at least one capacitor to form a switched capacitor branch, and each switched capacitor branch is connected in parallel to form an adjustable capacitor group; the adjustable capacitor group includes a first adjustable group and a second adjustable group; the broadband impedance matching module also includes a first inductor; the output end of the first inductor is connected to the first end of the first adjustable group; the second end of the first adjustable group is connected to the first end of the second adjustable group, the second end of the second adjustable group is grounded, and the second end of the first adjustable group and the first end of the second adjustable group are also used to connect to the input end of the load; or, the adjustable capacitor group includes a third adjustable group and a fourth adjustable group; the broadband impedance matching module includes a third inductor and a fourth inductor; the third inductor, the fourth inductor and the third adjustable group are connected in series in sequence; the first end of the fourth adjustable group is connected to the output end of the third inductor, and the second end of the fourth adjustable group is grounded; Wherein, the radio frequency switch and the capacitor connected to the radio frequency switch are formed on the radio frequency switch chip.

2. The power amplifier according to claim 1, wherein: In the case where the adjustable capacitor group includes a first adjustable group and a second adjustable group and the broadband impedance matching module includes a first inductor, the broadband impedance matching module further includes a second inductor and a first capacitor; The output end of the second inductor is connected to the input end of the first inductor; A first end of the first capacitor is connected to the output end of the second inductor, and a second end of the first capacitor is grounded.

3. The power amplifier according to claim 1, wherein: In the case where the adjustable capacitor group includes a first adjustable group and a second adjustable group and the broadband impedance matching module includes a first inductor, the broadband impedance matching module further includes a second capacitor; A first end of the second capacitor is connected to the input end of the first inductor, and a second end of the second capacitor is grounded.

4. The power amplifier according to any one of claims 1 to 3, characterized in that The M radio frequency switches are manufactured using chip technology to form radio frequency switch chips.

5. The power amplifier according to claim 4, wherein: The chip process includes any one of the following: silicon on insulator SOI and pseudo modulation doped heterojunction field effect transistor PMENT.

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