A transistor with a voltage control auxiliary circuit

Abstract

The present invention provides a transistor with a voltage control auxiliary circuit. The voltage control auxiliary circuit is introduced at the gate, wherein the voltage control auxiliary circuit includes a reference voltage network and a switch network. When the reference voltage network is in steady-state operation, a reference voltage is generated to the switch network, and the reference voltage makes the gate voltage of the target transistor in a normal operating voltage that is not broken down during the switch operation, and can be compatible with the output voltage equipolarity of the traditional Si material drive, thereby overcoming the disadvantage that the gate of the third-generation semiconductor device is easy to break down.

Description

Technical Field

[0001] The invention belongs to the field of power semiconductors, and in particular relates to a transistor with a voltage control auxiliary circuit. Background Art

[0002] With the vigorous development of new energy and the widespread application of power electronics, ordinary Si-based devices cannot meet the application requirements in high-voltage, high-temperature and high-frequency environments. The third-generation semiconductors such as SiC and GaN materials have excellent characteristics such as large bandgap, high breakdown voltage and high thermal conductivity, which provide possibilities for the new generation of power electronic devices and systems. However, due to the inherent characteristics of the third-generation semiconductor power devices, the existing drivers for Si materials are not suitable for the application of third-generation semiconductor devices, especially SiCJFET and GaN HEMT. The main manifestations are: the voltage borne by the gate is small, generally not exceeding 6V, while the existing driver input voltage exceeds 10V, which increases the difficulty and cost of driver development and also limits the large-scale application of third-generation semiconductor devices. Summary of the invention

[0003] In view of the defects of the prior art, the present invention provides a transistor with a voltage control auxiliary circuit. The present invention introduces a voltage control auxiliary circuit Q at the gate, wherein the voltage control auxiliary circuit Q includes a reference voltage network V and a switch network C. When the reference voltage network V is in steady-state operation, it generates a reference voltage Vb to the switch network C, and Vb makes the gate voltage Vg of the transistor in a normal working voltage that is not broken down during the switch operation, which can be compatible with the output voltage and polarity of traditional Si material drive, and overcome the disadvantage that the gate of the third-generation semiconductor device is easy to break down.

[0004] The technical solution for achieving the purpose of the present invention is:

[0005] A transistor with a voltage control auxiliary circuit, characterized by comprising:

[0006] Transistor and voltage control auxiliary circuit Q; the voltage control auxiliary circuit Q includes a reference voltage network V and a switch network C; when the driving input voltage Vgg is a steady-state first potential, the switch network C in the voltage control auxiliary circuit Q is in an on state, and the gate voltage Vg of the transistor is the same as the driving input voltage Vgg as the steady-state first potential; when the driving input voltage Vgg is a steady-state second potential, the voltage control auxiliary circuit Q controls the switch network C so that the gate voltage Vg of the transistor is stabilized at a preset voltage Vgx.

[0007] Wherein, the transistor is in an off state when the driving input voltage Vgg is a steady-state first potential, and is in an on state when the driving input voltage Vgg is a steady-state second potential.

[0008] The transistor body material is Si, Ge, SiC, GaN, AlGaN, AlN, InP, diamond and Ga 2 O 3 At least one of .

[0009] Wherein, the reference voltage network V generates a reference voltage Vb to the switch network C when operating in a steady state.

[0010] The switch network C makes the gate voltage Vg of the transistor in the switch operation be between the steady-state first voltage and the preset voltage Vgx according to the reference voltage Vb.

[0011] Wherein, the preset voltage Vgx and the reference voltage Vb have a positively correlated or negatively correlated functional relationship.

[0012] Among them, the voltage control auxiliary circuit Q can be an integrated circuit integrated with the transistor in the same chip, an independent integrated circuit chip placed in the same package, integrated with the driver chip on the same chip, or a discrete device assembled in the circuit system.

[0013] Wherein, the reference voltage network V may be composed of at least one of a voltage source, a transistor, a diode, a resistor and a capacitor.

[0014] Wherein, the switch network C is composed of at least one transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 The utility model relates to a transistor with a voltage control auxiliary circuit.

[0016] Figure 2 It is a GaN HEMT integrated driving circuit diagram based on Si-based integrated enhancement mode and depletion mode integration provided in the first specific embodiment of the present invention.

[0017] Figure 3 This is an integrated driving circuit diagram based on Si-based integrated enhancement-mode GaN HEMT provided in the second specific embodiment of the present invention.

[0018] Figure 4 1 is a waveform diagram of a driving input voltage Vgg, a reference voltage Vb, a preset voltage Vgx and a gate voltage of a main device transistor T1 according to a second specific embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to make the purpose and technical solution of the present invention more clearly understood, the present invention is further described in detail below in combination with the embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0020] like Figure 2 FIG. 1 is a schematic diagram of a circuit of the first embodiment, wherein the circuit includes a transistor T1 and a switch network transistor T2. In the present embodiment, all components are integrated in the same substrate.

[0021] In the first embodiment of the present invention, the substrate material is silicon material.

[0022] In the first embodiment of the present invention, the transistor T1 is an enhancement mode P-type gate GaN HEMT (High Electron Mobility Transistor), and the transistor T2 is a depletion mode GaN HEMT. For the T1 device, its threshold voltage is 1.2V, and its forward blocking voltage is 650V; for the T2 device, its threshold voltage is -6V.

[0023] The working principle of this embodiment is:

[0024] In this example, the reference auxiliary Vb generated by transistor T2 is 0V when the input steady-state level is input. When the input signal is low, the voltage difference between the gate and source of T2 is 0V, the device is turned on, and the main device T1 is turned off. When the input signal is high, the voltage difference between the gate and source of T2 is 0V, the device is turned on, the main device T1 is turned on and increases with the input signal voltage. When the gate voltage of the main device T1 rises to more than 6V, the voltage difference between the gate and source of T2 is less than -6V, and the T2 device is turned off, thereby protecting the gate voltage of the main device T1 from not exceeding 6V and preventing the gate of the device from being broken down.

[0025] like Figure 3 The circuit diagram of the second embodiment is shown, and the circuit includes a transistor T1, a reference voltage network V and a switch network C. The reference voltage network is composed of capacitors C1, C2 and resistors R1, R2, and the switch network is composed of a transistor T2.

[0026] In the second embodiment of the present invention, the substrate material is silicon material.

[0027] In the second embodiment of the present invention, the transistors T1 and T2 are both enhancement mode P-type gate GaN HEMTs. For the main switch device T1, its threshold voltage is 1.2V and its forward blocking voltage is 650V.

[0028] In the second embodiment of the present invention, the control switch T2 is a symmetrical device, and is manufactured using the same process as the transistor T1.

[0029] In the second embodiment of the present invention, the resistor R may be manufactured using a two-dimensional electron gas block resistor and the capacitor C may be manufactured using a P-type gate capacitor.

[0030] The working principle of this example is:

[0031] When the input signal jumps from low level to high level, capacitors C1 and C2 are charged and the input voltage is divided. At this time, the reference voltage is determined by the capacitor ratio. When the high level reaches a steady state, the control switch T2 works in the subthreshold region. The reference voltage value is determined by the resistance ratio. The main device T1 is turned on. Due to the voltage division effect of resistors R1 and R2, the gate voltage of the main device T1 does not exceed its gate breakdown voltage. When the input signal changes from a high level to a steady low level, the capacitor is discharged, the switch T2 is fully turned on, and the main device T1 is turned off.

Claims

1. A transistor with a voltage-controlled auxiliary circuit, characterized in that: include: target transistor and voltage control auxiliary circuit; The voltage control auxiliary circuit includes a reference voltage network and a switch network; When the driving input voltage is at the steady-state first potential, the switch network in the voltage control auxiliary circuit is in the on state, and the gate voltage of the transistor and the driving input voltage are both at the steady-state first potential; When the driving input voltage is at a steady-state second potential, the voltage control auxiliary circuit controls the switch network so that the gate voltage of the transistor T is stabilized at a preset voltage; The switch network makes the gate voltage of the transistor between the steady-state first voltage and the preset voltage during switch operation according to the reference voltage; the body material of the transistor is at least one of Si, Ge, SiC, GaN, AlGaN, AlN, InP, diamond and Ga2O3.

2. A transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The transistor is in an off state when the driving input voltage is a steady-state first potential, and is in an on state when the driving input voltage is a steady-state second potential.

3. A transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The reference voltage network generates a reference voltage to the switch network when operating in a steady state.

4. A transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The preset voltage has a positively correlated or negatively correlated functional relationship with the reference voltage.

5. The transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The voltage control auxiliary circuit can be integrated with the transistor in an integrated circuit on the same chip, placed in an independent integrated circuit chip in the same package, integrated with the driver chip on the same chip, or assembled as a discrete device in a circuit system.

6. The transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The reference voltage network may be composed of at least one of a voltage source, a transistor, a diode, a resistor and a capacitor.

7. The transistor with a voltage-controlled auxiliary circuit according to claim 1, characterized in that: The switch network is composed of at least one transistor.

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