Radiation detector, radiation imaging device, and manufacturing method

Abstract

The present invention provides a radiation detector, a radiation imaging device, and a manufacturing method. The radiation detector comprises: a substrate, a plurality of pixels for accumulating charges generated from light converted from radiation are formed in a pixel region on a surface of a substrate having a particle layer on the opposite side of a surface having the particle layer, the substrate being flexible and made of resin, the particle layer comprising inorganic particles having an average particle diameter of 0.05 μm or more and 2.5 μm or less; a conversion layer provided on a surface of the substrate on which the pixel region is provided, converting the radiation into light; and an enhancement substrate provided on at least one of a surface on the substrate side and a surface on the conversion layer side of a laminated body on which the substrate and the conversion layer are stacked.

Description

Technical Field

[0001] The present invention relates to a radiation detector, a radiation imaging device and a manufacturing method. Background Art

[0002] Conventionally, there is known a radiographic imaging device that performs radiographic imaging for the purpose of medical diagnosis. Such a radiographic imaging device uses a radiation detector that detects radiation that has passed through a subject and generates a radiographic image.

[0003] As a radiation detector, there is a radiation detector having a conversion layer such as a scintillator that converts radiation into light, and a substrate having a plurality of pixels in a pixel region of the substrate, wherein the plurality of pixels accumulate charges generated according to the light converted by the conversion layer. As a substrate of such a substrate of a radiation detector, a substrate using a flexible substrate is known (for example, refer to Japanese Patent Publication No. 2013-217769). By using a flexible substrate, for example, the radiation imaging device (radiation detector) can be made lighter, and there is also a case where imaging of a subject becomes easier.

[0004] However, there are cases where the radiation detector is handled alone during the manufacturing process of the radiation imaging device.

[0005] In a radiographic imaging device in which a radiation detector and an electric circuit are arranged in a direction intersecting the stacking direction in which the conversion layer and the substrate are stacked, and a deflection adjustment member is provided over the entire radiation detector and the electric circuit, the case where the radiation detector is handled as a single unit is not considered. Therefore, in a case where the radiation detector in the radiographic imaging device of the above structure is handled as a single unit, the conversion layer may be damaged. Summary of the invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a radiation detector, a radiation imaging device and a manufacturing method, which can suppress the destruction of the conversion layer in the radiation detector unit compared to a radiation imaging device in which the radiation detector and the electrical circuit are arranged in a direction intersecting with the stacking direction in which the conversion layer and the substrate are stacked, and a deflection adjustment component is provided throughout the radiation detector and the electrical circuit.

[0008] Means for solving problems

[0009] The first form of the present disclosure is a radiation detector, comprising: a substrate, a plurality of pixels for accumulating charges generated from light converted from radiation formed in a pixel region on a surface of the substrate having a particle layer on the opposite side of the surface having the particle layer, the substrate being flexible and made of resin, the particle layer comprising inorganic particles having an average particle diameter of 0.05 μm or more and 2.5 μm or less; a conversion layer, disposed on a surface of the substrate having the pixel region, for converting radiation into light; and an enhanced substrate, disposed on at least one of a surface on the substrate side and a surface on the conversion layer side of a stacked body having the substrate and the conversion layer stacked. In the above scheme, the substrate comprising inorganic particles having an average particle diameter of 0.05 μm or more and 2.5 μm or less may be a single layer or a stack of two or more layers having a different content (weight %) of inorganic particles.

[0010] A radiation detector according to a second aspect of the present disclosure is the radiation detector according to the first aspect, wherein the thermal expansion coefficient of the base material at 300° C. to 400° C. is 20 ppm / K or less.

[0011] The third form of the radiation detector disclosed in the present invention is a radiation detector of the first form or the second form, in which the substrate satisfies at least one of a heat shrinkage rate in the MD (Machine Direction) direction of 0.5% or less at 400°C and an elastic modulus of 1 GPa or more at 500°C when the substrate has a thickness of 25 μm.

[0012] A radiation detector according to a fourth aspect of the present disclosure is the radiation detector according to any one of the first to third aspects, wherein the microparticles contain an element having an atomic number greater than an element constituting the base material and having an atomic number of 30 or less.

[0013] A radiation detector according to a fifth aspect of the present disclosure is the radiation detector according to any one of the first to fourth aspects, wherein the reinforcing substrate has a bending elastic modulus of 150 MPa to 2500 MPa.

[0014] A sixth aspect of the present disclosure is a radiation detector according to any one of the first to fifth aspects, wherein a ratio of a thermal expansion coefficient of the reinforcing substrate to a thermal expansion coefficient of the conversion layer is 0.5 or more and 2 or less.

[0015] A radiation detector according to a seventh aspect of the present disclosure is the radiation detector according to any one of the first to sixth aspects, wherein the coefficient of thermal expansion of the reinforcing substrate is 30 ppm / K or more and 80 ppm / K or less.

[0016] A radiation detector according to an eighth aspect of the present disclosure is the radiation detector according to any one of the first to seventh aspects, wherein the reinforcing substrate includes a material having a yield point.

[0017] A radiation detector according to a ninth aspect of the present disclosure is the radiation detector according to any one of the first to eighth aspects, wherein the reinforcing substrate has higher rigidity than the base material.

[0018] A radiation detector according to a tenth aspect of the present disclosure is the radiation detector according to any one of the first to ninth aspects, wherein the thickness of the reinforcing substrate is thicker than the thickness of the base material.

[0019] In the 11th form of the radiation detector disclosed herein, in any one of the 1st to 10th forms of the radiation detector, the conversion layer covers the pixel area and is arranged in an area of ​​a portion of the surface of the substrate where the pixel area is arranged, and the reinforcement substrate is arranged in an area larger than the area where the conversion layer is arranged.

[0020] In the 12th form of the radiation detector disclosed in the present invention, in any one of the 1st to 11th forms, the enhancement substrate is arranged on the surface on the substrate side and the surface on the conversion layer side of a stacked body having a substrate and a conversion layer, and the thickness of the enhancement substrate arranged on the surface on the conversion layer side is thicker than the thickness of the enhancement substrate arranged on the surface on the substrate side.

[0021] A radiation detector according to a thirteenth aspect of the present disclosure is the radiation detector according to any one of the first to twelfth aspects, wherein the reinforcing substrate is a substrate made of plastic.

[0022] A radiation detector according to a fourteenth aspect of the present disclosure is the radiation detector according to the thirteenth aspect, wherein the plastic is at least one of polycarbonate and polyethylene terephthalate.

[0023] A radiation detector according to a fifteenth aspect of the present disclosure is the radiation detector according to the thirteenth or fourteenth aspect, wherein the plastic is at least one of styrene, acrylic, polyacetal, and nylon.

[0024] A radiation detector according to a sixteenth aspect of the present disclosure is the radiation detector according to any one of the thirteenth to fifteenth aspects, wherein the plastic is at least one of polypropylene, ABS, engineering plastics, polyethylene terephthalate, and polyphenylene ether.

[0025] A radiation detector according to a seventeenth aspect of the present disclosure is the radiation detector according to the thirteenth aspect, wherein the plastic is a thermoplastic resin.

[0026] The radiation detector according to the eighteenth aspect of the present disclosure is the radiation detector according to any one of the first to seventeenth aspects, further comprising: a buffer layer provided between the substrate and the conversion layer for buffering the difference between the thermal expansion coefficient of the conversion layer and the thermal expansion coefficient of the substrate.

[0027] In the 19th form of the radiation detector disclosed herein, in any one of the 1st to 18th forms, the pixel has: a sensor portion that generates charges corresponding to the dose of irradiated radiation and accumulates the generated charges; and a switching element that reads out the charges accumulated in the sensor portion.

[0028] A radiation detector according to a 20th aspect of the present disclosure is the radiation detector according to the 19th aspect, wherein the switching element is a transistor having a gate electrode, and the substrate has a layer formed of an inorganic material between a base material and the gate electrode.

[0029] In the 21st form of the radiation detector disclosed in the present invention, in any one of the first to 20th forms, an enhancement substrate is arranged on a surface on the substrate side of a stacked body on which a conversion layer is stacked, and a sealing component for sealing the side surface of the conversion layer is also provided between the enhancement substrate and the surface on the conversion layer side of the substrate.

[0030] The 22nd form of the radiation detector disclosed herein is a radiation detector in any one of the 1st to 21st forms, wherein the laminate further has a portion on the conversion layer side where a bonding layer, an adhesive layer and a protective layer are stacked in sequence, wherein the bonding layer is a reflective bonding layer that reflects light converted by the conversion layer, the adhesive layer covers an area including an area from the end of the bonding layer to the surface of the substrate, the protective layer covers the bonding layer and the adhesive layer, and the reinforcing substrate is arranged on at least one of the surfaces on the substrate side and the protective layer side of the laminate.

[0031] The 23rd form of the radiation detector disclosed in the present invention, in any one of the 1st to 21st forms of the radiation detector, also has a portion in which an adhesive layer and a protective layer are stacked in sequence on the conversion layer side, the adhesive layer is a reflective adhesive layer that reflects light converted by the conversion layer and covers the entire conversion layer and an area including the surface of the substrate, the protective layer covers the adhesive layer, and the reinforcing substrate is arranged on at least one of the surfaces on the substrate side and the protective layer side of the stacked body.

[0032] A radiation detector according to a 24th aspect of the present disclosure is the radiation detector according to any one of the first to 23rd aspects, wherein the conversion layer includes columnar crystals of CsI.

[0033] In addition, the 25th form of the radiation imaging device disclosed in the present invention comprises: a radiation detector of any one form from the 1st form to the 24th form; a control unit, which outputs a control signal for reading out the charges accumulated in a plurality of pixels; a driving unit, which reads out the charges from the plurality of pixels according to the control signal; and a signal processing unit, which inputs an electrical signal corresponding to the charges read out from the plurality of pixels, generates image data corresponding to the input electrical signal, and outputs the image data to the control unit.

[0034] In addition, the 26th form of the radiation imaging device disclosed in the present invention is further provided with: a shell having an irradiation surface irradiated with radiation, which accommodates the radiation detector as a sensor substrate in the radiation detector and a state in which the sensor substrate in the conversion layer is opposite to the irradiation surface.

[0035] In addition, the 27th form of the present disclosure is a manufacturing method, comprising: a process of coating an adhesive layer on an enhanced substrate of a size corresponding to the radiation detector; a process of forming a substrate on a support body via a peeling layer, wherein the substrate has a pixel area on the surface of the substrate having a particle layer on the opposite side of the surface having the particle layer, and has a plurality of pixels for accumulating charges generated based on light converted from radiation, wherein the substrate is flexible and made of resin, and the particle layer contains inorganic particles with an average particle size of not less than 0.05 μm and not more than 2.5 μm; a process of forming a conversion layer for converting radiation into light on the surface of the substrate having the pixel area; a process of connecting wiring for connecting pixels to a circuit unit on the substrate; a process of attaching an enhanced substrate to the surface of the conversion layer on the opposite side of the surface opposite to the substrate; and a process of peeling off the substrate to which the wiring is connected and on which the conversion layer and the enhanced substrate are provided from the support body. In the above embodiment, the substrate containing inorganic fine particles having an average particle size of 0.05 μm to 2.5 μm may have any structure of a single layer or a stack of two or more layers with different contents (weight %) of inorganic fine particles.

[0036] Effects of the Invention

[0037] According to the present disclosure, compared to a radiation imaging device in which a radiation detector and an electrical circuit are arranged in a direction intersecting with the stacking direction in which the conversion layer and the substrate are stacked, and a deflection adjustment component is provided throughout the radiation detector and the electrical circuit, it is possible to suppress the destruction of the conversion layer in the radiation detector unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a structural diagram showing an example of the structure of a TFT (Thin Film Transistor) substrate in the radiation detector according to the first exemplary embodiment.

[0039] Figure 2A This is a cross-sectional view of an example of a substrate for explaining an exemplary embodiment.

[0040] Figure 2B This is an explanatory diagram for explaining backscattered rays generated in a substrate having a particle layer due to radiation that has passed through a subject.

[0041] Figure 2CThis is an explanatory diagram for explaining backscattered rays generated in a base material having no particle layer due to radiation transmitted through a subject.

[0042] Figure 3 This is a plan view of an example of the radiation detector according to the first exemplary embodiment as viewed from the side where the conversion layer is provided.

[0043] Figure 4 yes Figure 3 AA line cross-sectional view of the radiation detector shown.

[0044] Figure 5 It is a diagram for explaining an example of a method for manufacturing a radiation detector according to the first exemplary embodiment.

[0045] Figure 6 This is a plan view of an example of the radiation detector according to the first exemplary embodiment as viewed from the side where the conversion layer is provided.

[0046] Figure 7 yes Figure 6 AA line cross-sectional view of the radiation detector shown.

[0047] Figure 8 It is a cross-sectional view for explaining the peripheral portion and the central portion of the conversion layer according to the second exemplary embodiment.

[0048] Fig. 9 It is a cross-sectional view showing an example of a stacked state of an adhesive layer, a pressure-sensitive adhesive layer, and a protective layer in a radiation detector according to a second exemplary embodiment.

[0049] Fig.10 It is a cross-sectional view schematically showing a cross section of an example of a bonding layer, an adhesive layer, and a protective layer according to a second exemplary embodiment.

[0050] Fig.11 It is a cross-sectional view of an example of a radiation detector according to a third exemplary embodiment.

[0051] Fig.12 It is a cross-sectional view of an example of a radiation detector according to a fourth exemplary embodiment.

[0052] Fig.13 It is a cross-sectional view of an example of a radiation detector according to a fifth exemplary embodiment.

[0053] Fig.14 It is a cross-sectional view showing an example of a stacked state of an adhesive layer and a protective layer in a radiation detector according to a fifth exemplary embodiment.

[0054] Fig.15 It is a cross-sectional view of another example of the radiation detector according to the exemplary embodiment.

[0055] Fig.16 FIG. 1 is a cross-sectional view of a pixel portion of another example of a radiation detector according to the exemplary embodiment.

[0056] Fig.17 It is a cross-sectional view of another example of the radiation detector according to the exemplary embodiment.

[0057] Fig.18 It is a cross-sectional view showing a cross section of an example of a radiation imaging device to which the radiation detector according to the exemplary embodiment is applied.

[0058] Fig.19 It is a cross-sectional view showing a cross section of another example of a radiation imaging device to which the radiation detector according to the exemplary embodiment is applied.

[0059] Fig. 20 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0060] Fig.21 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0061] Fig. 22 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0062] Fig.23 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0063] Fig.24 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0064] Fig.25 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0065] Fig.26 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0066] Fig. 27 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0067] Fig.28 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0068] Fig.29This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0069] Fig.30 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0070] Fig.31 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0071] Fig.32 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0072] Fig.33 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0073] Fig.34 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0074] Fig.35 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0075] Fig.36 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0076] Fig.37 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0077] Fig.38 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0078] Fig.39 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0079] Fig.40 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0080] Fig.41 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0081] Fig.42 It is a plan view showing an example of the structure of a deflection suppression member according to an exemplary embodiment of the disclosed technology.

[0082] Fig.43 This is a perspective view showing an example of the structure of a deflection suppression member according to an exemplary embodiment of the disclosed technology.

[0083] Fig.44 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0084] Fig.45 It is a plan view showing an example of the structure of a deflection suppression member according to an exemplary embodiment of the disclosed technology.

[0085] Fig.46 It is a plan view showing an example of the structure of a deflection suppression member according to an exemplary embodiment of the disclosed technology.

[0086] Fig.47 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0087] Fig.48 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0088] Fig.49 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0089] Fig.50 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0090] Fig.51 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0091] Fig.52A This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0092] Fig.52B This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0093] Fig.52C This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0094] Fig.53 This is a cross-sectional view showing an example of the structure of a radiation detector according to an exemplary embodiment of the disclosed technology.

[0095] Fig.54This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0096] Fig.55 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0097] Fig.56 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0098] Fig.57 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0099] Fig.58 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0100] Fig.59 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology.

[0101] Fig.60 This is a cross-sectional view showing an example of the structure of a radiation imaging device according to an exemplary embodiment of the disclosed technology. DETAILED DESCRIPTION

[0102] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the exemplary embodiments do not limit the present invention.

[0103] [Implementation of the first example]

[0104] The radiation detector of the embodiment of this example has the function of detecting radiation that has passed through a subject and outputting image information representing a radiation image of the subject. The radiation detector of the embodiment of this example includes: a TFT (Thin Film Transistor) substrate and a conversion layer (see FIG. 1 ) that converts radiation into light. Figure 4 , the TFT substrate 12 and the conversion layer 14 of the radiation detector 10).

[0105] First, refer to Figure 1An example of the structure of the TFT substrate 12 in the radiation detector of the embodiment of this example is described. In addition, the TFT substrate 12 of the embodiment of this example is a substrate in which a pixel array 31 including a plurality of pixels 30 is formed in a pixel region 35 of a substrate 11. Therefore, hereinafter, the expression "pixel region 35" is used as having the same meaning as "pixel array 31". The TFT substrate 12 of the embodiment of this example is an example of a substrate of the disclosed technology.

[0106] The substrate 11 is made of resin and has flexibility. The substrate 11 is, for example, a resin sheet containing plastic such as polyimide. The thickness of the substrate 11 can be any thickness that can obtain the desired flexibility according to the hardness of the material and the size of the TFT substrate 12. For example, when the substrate 11 is a resin sheet, the thickness can be 5 μm to 125 μm, and it is more preferable if the thickness is 20 μm to 50 μm.

[0107] In addition, the substrate 11 has the property of being able to withstand the manufacture of the pixel 30 described in detail later, and in the embodiment of this example, has the property of being able to withstand the manufacture of an amorphous silicon TFT (a-Si TFT). As a property of such a substrate 11, the thermal expansion coefficient at 300°C to 400°C is preferably the same as that of an amorphous silicon (Si) wafer (for example, ±5ppm / K), and specifically, preferably 20ppm / K or less. In addition, as the thermal shrinkage rate of the substrate 11, when the thickness is 25μm, the thermal shrinkage rate in the MD (Machine Direction) direction at 400°C is preferably 0.5% or less. In addition, the elastic modulus of the substrate 11 is preferably such that it does not have a transition point possessed by a general polyimide in the temperature range between 300°C and 400°C, and the elastic modulus at 500°C is greater than 1GPa.

[0108] In addition, if Figure 2A as well as Figure 2B As shown, the substrate 11 of the present exemplary embodiment preferably has a microparticle layer 11L including inorganic microparticles 11P having an average particle diameter of 0.05 μm or more and 2.5 μm or less on the surface opposite to the side where the conversion layer 14 is provided.

[0109] in addition, Figure 2B as well as Figure 2C An example is shown in which the radiation detector 10 of the present exemplary embodiment is applied to an ISS (Irradiation Side Sampling) type radiation detector in which the radiation R is irradiated from the TFT substrate 12 side.

[0110] like Figure 2B as well as Figure 2CAs shown, in the substrate 11, backscattered rays Rb are generated by the radiation R transmitted through the subject S. When the substrate 11 is made of resin such as PI, since it is an organic substance, the atoms such as C, H, O, and N having relatively small atomic numbers constituting the organic substance increase the backscattered rays Rb due to the Compton effect.

[0111] like Figure 2B In the case where the substrate 11 shown in the figure has a particle layer 11L including particles 11P that absorb backscattered rays Rb generated in the substrate 11, Figure 2C Compared with the case where the substrate 11 does not have the microparticle layer 11L, the backscattered rays Rb that are transmitted through the substrate 11 and scattered back are suppressed, which is preferable.

[0112] As such fine particles 11P, inorganic substances containing atoms which generate less backscattered rays Rb by themselves and absorb less radiation R which transmits the object S while absorbing the backscattered rays Rb. In addition, from the viewpoint of suppression of backscattered rays Rb, which has a trade-off relationship between suppression of backscattered rays Rb and transmittance of radiation R, it is preferable that the fine particles 11P contain an element with an atomic number larger than C, H, O, and N of the resin constituting the substrate 11. On the other hand, although the ability to absorb backscattered rays Rb increases as the atomic number increases, if the atomic number exceeds 30, the amount of radiation R absorbed increases, and the dose of radiation R reaching the conversion layer 14 is significantly reduced, which is not preferable. Therefore, in the case of a resinous substrate 11, it is preferable that the fine particles 11P use an inorganic substance having an atomic number larger than that of the atoms constituting the organic substance constituting the substrate 11 and not more than 30. Specific examples of such fine particles 11P include SiO2, which is an oxide of Si with an atomic number of 14, MgO, which is an oxide of Mg with an atomic number of 12, Al2O3, which is an oxide of Al with an atomic number of 13, and TiO2, which is an oxide of Ti with an atomic number of 22.

[0113] A specific example of a resin sheet having such characteristics is XENOMAX (registered trademark).

[0114] In addition, the above-mentioned thickness in the embodiment of this example was measured using a micrometer. The thermal expansion coefficient was measured in accordance with JIS K7197:1991. In addition, in the measurement, a test piece was cut from the main surface of the substrate 11 at an angle of 15 degrees, and the thermal expansion coefficient of each test piece cut out was measured, and the highest value was set as the thermal expansion coefficient of the substrate 11. In the measurement of the thermal expansion coefficient, the measurement was performed at intervals of 10°C at -50°C to 450°C for the MD (Machine Direction) direction and the TD (Transverse Direction) direction, respectively, and (ppm / °C) was converted into (ppm / K). In the measurement of the thermal expansion coefficient, a TMA4000S device manufactured by MAC Science was used, and the sample length was set to 10 mm, the sample width was set to 2 mm, and the initial load was set to 34.5 g / mm 2 , the heating rate was set to 5°C / min, and the atmosphere was set to argon. The elastic modulus was measured in accordance with JIS K7171:2016. In addition, during the measurement, test pieces were cut from the main surface of the substrate 11 at an angle of 15 degrees each, and a tensile test was performed on each of the cut test pieces, and the highest value was set as the elastic modulus of the substrate 11.

[0115] In addition, the particles 11P included in the particle layer 11L may cause irregularities on the surface of the substrate 11. In this way, it may be difficult to form the pixel 30 in a state where the irregularities are generated on the surface of the substrate 11. Figure 2B As shown, the substrate 11 preferably has a particle layer 11L on the second surface 11B opposite to the first surface 11A where the pixels 30 are formed, in other words, on the second surface 11B opposite to the first surface 11A where the conversion layer 14 is provided.

[0116] In order to fully absorb the backscattered rays Rb generated in the substrate 11, it is preferable that the substrate 11 has a particle layer 11L on the surface close to the subject S, such as Figure 2B In the ISS type radiation detector 10 shown, it is preferable that the second surface 11B has a microparticle layer 11L.

[0117] As described above, in the ISS-type radiation detector 10 , the substrate 11 has the microparticle layer 11L on the second surface 11B, so that the pixels 30 can be formed with high accuracy and the backscattered rays Rb can be effectively suppressed.

[0118] Each pixel 30 includes a sensor unit 34 that generates and accumulates charges based on the light converted by the conversion layer, and a switch element 32 that reads the charges accumulated by the sensor unit 34. In the embodiment of this example, a thin film transistor (TFT) is used as the switch element 32 as an example. Therefore, hereinafter, the switch element 32 is referred to as "TFT32".

[0119] The plurality of pixels 30 are arranged in a pixel region 35 of the TFT substrate 12 in a direction (with respect to Figure 1 The scanning wiring direction corresponding to the horizontal direction of the row direction (hereinafter referred to as the "row direction") and the cross direction relative to the row direction (hereinafter referred to as the "row direction") Figure 1 The vertical direction corresponds to the signal wiring direction (hereinafter also referred to as the "column direction") and is arranged two-dimensionally. Figure 1 , the arrangement of the pixels 30 is simplified, but for example, 1024×1024 pixels 30 are arranged in the row direction and the column direction.

[0120] In addition, in the radiation detector 10, a plurality of scanning wirings 38 for controlling the switching state (on and off) of the TFT 32 and a plurality of signal wirings 36 for reading out the charge accumulated in the sensor section 34 provided for each column of the pixels 30 are provided in a mutually intersecting manner. Each of the plurality of scanning wirings 38 is connected to an external driving section (see FIG. 1 ) of the radiation detector 10 via a pad (not shown) provided on the TFT substrate 12. Fig.18 as well as Fig.19 , driving unit 103), through which a control signal output from the driving unit to control the switching state of TFT 32 flows. In addition, each of the plurality of signal wirings 36 is connected to a signal processing unit (see FIG. 1 ) outside the radiation detector 10 via a pad (not shown) provided on the TFT substrate 12. Fig.18 as well as Fig.19 , signal processing unit 104), whereby the charge read out from each pixel 30 is output to the signal processing unit.

[0121] Furthermore, in the sensor portion 34 of each pixel 30, a common wiring 39 is provided in the wiring direction of the signal wiring 36 in order to apply a bias voltage to each pixel 30. The common wiring 39 is connected to a bias power supply outside the radiation detector 10 via a pad (not shown) provided on the TFT substrate 12, thereby applying a bias voltage to each pixel 30 from the bias power supply.

[0122] In the radiation detector 10 of the present exemplary embodiment, a conversion layer is formed on the TFT substrate 12 . Figure 3 This is a plan view of the radiation detector 10 according to the embodiment of this example as viewed from the side where the conversion layer 14 is formed. Figure 4 yes Figure 3AA line cross-sectional view of the radiation detector 10 in FIG. 1 . In the following, when the structure of the radiation detector 10 is referred to as “upper”, it means that the upper side is the positional relationship based on the TFT substrate 12 side.

[0123] like Figure 3 as well as Figure 4 As shown, the conversion layer 14 of this exemplary embodiment is provided on a region including a portion of the pixel region 35 in the first surface 12A of the TFT substrate 12. Thus, the conversion layer 14 of this exemplary embodiment is not provided on a region of the outer peripheral portion of the first surface 12A of the TFT substrate 12.

[0124] In the embodiment of this example, a scintillator containing CsI (cesium iodide) is used as an example of the conversion layer 14. As such a scintillator, for example, CsI:T1 (cesium iodide with thallium added) or CsI:Na (cesium iodide with sodium added) whose emission spectrum when irradiated with X-rays is 400nm to 700nm is preferably used. In addition, the emission peak wavelength of CsI:T1 in the visible light region is 565nm.

[0125] In the radiation detector 10 of the present exemplary embodiment, as Figure 4 As shown in the example shown in FIG. 1 , the conversion layer 14 is formed directly on the TFT substrate 12 by a vapor deposition method such as vacuum evaporation, sputtering, and CVD (Chemical Vapor Deposition) to form a long columnar crystal 14A (see FIG. 1 ). Fig. 9 ). As a method for forming the conversion layer 14, for example, the following vacuum evaporation method can be cited, that is, when CsI:T1 is used as the conversion layer 14, CsI:T1 is heated and vaporized by heating means such as a resistance heating crucible in an environment with a vacuum degree of 0.01Pa to 10Pa, and the temperature of the TFT substrate 12 is set to room temperature (20°C) to 300°C, so that CsI:Tl is deposited on the TFT substrate 12. The thickness of the conversion layer 14 is preferably 100μm to 800μm.

[0126] In addition, in the embodiment of this example, the columnar crystals 14A (see Fig. 9 The end of the substrate on the base side of the growth direction (in this exemplary embodiment, the TFT substrate 12 side) is called the "root", and the sharp end on the opposite side of the root in the growth direction is called the "front end". In this exemplary embodiment, as an example, Figure 4 As shown, a buffer layer 13 is provided between the TFT substrate 12 and the conversion layer 14. As the buffer layer 13, a PI (PolyImide) film or a Parylene (registered trademark) film is used.

[0127] The protective layer 22 of the embodiment of this example has the function of protecting the conversion layer 14 from moisture such as humidity. As the material of the protective layer 22, for example, an organic film can be cited, and specifically, a single layer film or a laminated film of PET (Polyethylene Terephthalate), PPS (Poly Phenylene Sulfide), OPP (Oriented Poly Propylene), PEN (Poly Ethylene Naphthalate), PI, etc. can be cited. In addition, as the protective layer 22, a sheet of Alpet (registered trademark) in which aluminum is laminated by bonding aluminum foil or the like to an insulating sheet (film) such as PET can be used.

[0128] The reinforcing substrate 40 is provided via an adhesive layer 48 on a first surface 19A, which is a surface on the conversion layer 14 side of a stacked body 19 in which the TFT substrate 12 , the buffer layer 13 , the conversion layer 14 , and the protective layer 22 are stacked.

[0129] The reinforcing substrate 40 has higher rigidity than the base material 11, and the dimensional change (deformation) with respect to the force applied in the direction perpendicular to the surface opposite to the first surface 19A is smaller than the dimensional change with respect to the force applied in the direction perpendicular to the first surface 19A of the base material 11. In addition, the thickness of the reinforcing substrate 40 of the embodiment of this example is thicker than the thickness of the base material 11.

[0130] Specifically, the reinforcing substrate 40 of the embodiment of this example preferably uses a material having a bending modulus of 150 MPa or more and 2500 MPa or less. The method for measuring the bending modulus is based on, for example, JIS K 7171:2016. From the viewpoint of suppressing the deflection of the substrate 11, the reinforcing substrate 40 preferably has a higher bending rigidity than the substrate 11. In addition, if the bending modulus is lowered, the bending rigidity is also lowered. In order to obtain the desired bending rigidity, the thickness of the reinforcing substrate 40 must be increased, thereby increasing the thickness of the radiation detector 10 as a whole. Considering the material of the reinforcing substrate 40 described above, in order to obtain a bending modulus exceeding 140,000 Pacm 4 In the case of bending rigidity of 5000 Pa / cm, the thickness of the reinforcing substrate 40 tends to become relatively thick. Therefore, in order to obtain appropriate rigidity and considering the thickness of the entire radiation detector 10, the material used for the reinforcing substrate 40 is more preferably one having a bending elastic modulus of 150 MPa or more and 2500 MPa or less. In addition, the bending rigidity of the reinforcing substrate 40 is preferably 540 Pa / cm 4 Above and 140000Pacm 4 the following.

[0131] In addition, the thermal expansion coefficient of the reinforcing substrate 40 of the present exemplary embodiment is preferably close to the thermal expansion coefficient of the material of the conversion layer 14. More preferably, the ratio of the thermal expansion coefficient of the reinforcing substrate 40 to the thermal expansion coefficient of the conversion layer 14 (thermal expansion coefficient of the reinforcing substrate 40 / thermal expansion coefficient of the conversion layer 14) is preferably 0.5 or more and 2 or less. The thermal expansion coefficient of such a reinforcing substrate 40 is preferably 30 ppm / K or more and 80 ppm / K or less. For example, when the conversion layer 14 is made of CsI:Tl, the thermal expansion coefficient is 50 ppm / K. In this case, as materials relatively close to the conversion layer 14, PVC (Polyvinyl Chloride) with a thermal expansion coefficient of 60 ppm / K to 80 ppm / K, acrylic with a thermal expansion coefficient of 70 ppm / K to 80 ppm / K, PET with a thermal expansion coefficient of 65 ppm / K to 70 ppm / K, PC with a thermal expansion coefficient of 65 ppm / K, and Teflon (registered trademark) with a thermal expansion coefficient of 45 ppm / K to 70 ppm / K can be cited.

[0132] Furthermore, considering the above-mentioned bending modulus, the material of the reinforcing substrate 40 is more preferably a material containing at least one of PET, PC, and LDPE.

[0133] In addition, the reinforcing substrate 40 preferably includes a material having a yield point from the viewpoint of elasticity. In addition, in the embodiment of this example, the "yield point" refers to the phenomenon that the stress temporarily drops sharply when the material is stretched. On the curve representing the relationship between stress and strain, it refers to the point where the stress does not increase but the strain increases. It refers to the top of the stress-strain curve when the material is subjected to a tensile strength test. As resins having a yield point, generally, hard and viscous resins and soft, viscous and medium-strength resins can be listed. As hard and viscous resins, for example, PC can be listed. In addition, as soft, viscous and medium-strength resins, for example, polypropylene can be listed.

[0134] The reinforcing substrate 40 of the embodiment of this example is a substrate made of plastic. The plastic used as the material of the reinforcing substrate 40 is preferably a thermoplastic resin for the reasons described above, and may be PC (Polycarbonate), PET, styrene, acrylic acid, polyacetal, nylon, polypropylene, ABS (Acrylonitrile Butadiene Styrene), engineering plastics, PET, and at least one of polyphenylene ether. In addition, the reinforcing substrate 40 is preferably at least one of polypropylene, ABS, engineering plastics, PET, and polyphenylene ether, more preferably at least one of styrene, acrylic acid, polyacetal, and nylon, and even more preferably at least one of PC and PET.

[0135] like Figure 3 as well as Figure 4 As shown in FIG. 1 , the strengthening substrate 40 of the present exemplary embodiment is provided in a region of the first surface 12A of the TFT substrate 12 that is larger than the region where the conversion layer 14 is provided. Figure 3 as well as Figure 4 As shown, the end portion of the reinforcing substrate 40 protrudes to the outside (toward the outer peripheral portion of the TFT substrate 12 ) beyond the outer peripheral portion of the conversion layer 14 .

[0136] A flexible cable 112, which will be described in detail later, is connected to the outer periphery of the TFT substrate 12. A spacer 46 is provided between the reinforcing substrate 40 and the first surface 12A of the TFT substrate 12 to seal the side surface of the conversion layer 14 by sandwiching the flexible cable 112, the moisture-proofing agent 44, and the adhesive layer 45. The spacer 46 of the embodiment of this example is an example of a sealing member disclosed herein.

[0137] The method of providing the spacer 46 is not particularly limited. For example, the spacer 46 may be attached to the adhesive layer 48 at the end of the reinforcing substrate 40 in advance, and the reinforcing substrate 40 provided with the spacer 46 may be attached to the TFT substrate 12 provided with the laminate 19, the flexible cable 112, the moisture-proof agent 44, and the adhesive layer 45, so that the spacer 46 is provided between the TFT substrate 12 and the reinforcing substrate 40. In addition, the width of the spacer 46 (the direction intersecting the stacking direction of the laminate 19) is not limited to Figure 4 For example, with Figure 4 Compared to the example shown, the width of the spacer 46 may also be expanded to a position close to the conversion layer 14 .

[0138] In addition, a protective film 42 having a function of protecting from moisture such as humidity is provided on the second surface 19B of the laminate 19 on the TFT substrate 12 side. The material of the protective film 42 may be the same as that of the protective layer 22, for example.

[0139] As an example of a method of manufacturing the radiation detector 10 according to the present exemplary embodiment, the following method can be cited.

[0140] The adhesive layer 48 is applied in advance to the reinforcing substrate 40 which is set to a desired size in accordance with the radiation detector 10, and the spacer 46 is provided on the adhesive layer 48. Figure 5As shown, the TFT substrate 12 is formed on a support body 50 such as a glass substrate thicker than the base material 11 by, for example, a lamination method via a peeling layer 52. Furthermore, the conversion layer 14 is directly formed on the TFT substrate 12 by the vapor deposition method as described above, and the flexible cable 112, the moisture-proof agent 44, and the adhesive layer 45 are provided in advance.

[0141] Then, the reinforcing substrate 40 provided with the spacer 46 is attached to the TFT substrate 12 on which the conversion layer 14 is formed, thereby sealing the conversion layer 14. In addition, when the above-mentioned attachment is performed, it is performed under atmospheric pressure or reduced pressure (vacuum), but it is preferably performed under reduced pressure in order to suppress the entry of air during the attachment.

[0142] Then, the TFT substrate 12 is peeled off from the support 50 through the peeling layer 52. The peeling method is not particularly limited. For example, in a mechanical peeling method, any of the four sides of the TFT substrate 12 (substrate 11) is used as a peeling starting point, and the TFT substrate 12 is gradually peeled off from the support 50 from the side that becomes the starting point toward the opposite side. In addition, in a laser lift-off method, for example, a laser is irradiated from the back side of the support 50 (the side opposite to the side on which the TFT substrate 12 is provided), and the peeling layer 52 is decomposed by the laser through the support 50, thereby peeling the TFT substrate 12 from the support 50.

[0143] In addition, it is preferable to perform the mechanical peeling or laser peeling mentioned above after the flexible cable 112 is bonded to the TFT substrate 12 by thermocompression bonding or the like. In the case where the flexible cable 112 is bonded to the TFT substrate 12 after the TFT substrate 12 is peeled off from the support body 50, it is difficult to connect the flexible cable 112 because the TFT substrate 12 is bent, and it is easy to cause positional deviation. In the radiation imaging device 1 of the embodiment of this example, as described later, a chip such as a driving unit 103 and a signal processing unit 104 (both described later in detail) is provided on the flexible cable 112, which is a so-called COF (Chip On Film). Since the chips such as the driving unit 103 and the signal processing unit 104 are heavy, the TFT substrate 12 is easy to bend due to the weight of the flexible cable 112. In particular, when a plurality of flexible cables 112 as COF are connected to the TFT substrate 12, the TFT substrate 12 is bent due to the weight of the flexible cable 112 connected first, and it is possible that positional deviation is easy to occur in the flexible cable 112 connected later. Therefore, as described above, it is preferable to peel the TFT substrate 12 from the support body 50 after connecting the flexible cable 112 to the TFT substrate 12. In addition, the flexible cable 112 of the embodiment of this example is an example of the wiring of the present disclosure, and the driving unit 103 and the signal processing unit 104 of the embodiment of this example are examples of the circuit unit of the present disclosure.

[0144] Here, when the TFT substrate 12 is peeled off from the support 50, the TFT substrate 12 is easily bent because the base material 11 is flexible. When the TFT substrate 12 is greatly bent, the TFT substrate 12 is also greatly bent, and as a result, the conversion layer 14 may be damaged. In addition, not limited to the case where the TFT substrate 12 is peeled off from the support 50, when the radiation detector 10 is handled as a single body in the middle of the manufacturing process of the radiation imaging device 1, the conversion layer 14 may be damaged due to the bending of the TFT substrate 12. In contrast, in the radiation detector 10 of the present exemplary embodiment, since the reinforcing substrate 40 is provided on the surface of the stacked body 19 on the conversion layer 14 side, that is, the first surface 19A, it is possible to suppress the TFT substrate 12 from being greatly bent, and the conversion layer 14 can be suppressed from being damaged.

[0145] [Implementation of the Second Example]

[0146] Next, a second exemplary embodiment will be described. Since the stacked body 19 of the radiation detector 10 of the present exemplary embodiment is different from that of the first exemplary embodiment, the stacked body 19 will be described with reference to the drawings.

[0147] Figure 6 This is a plan view of an example of the radiation detector 10 according to the embodiment of this example as viewed from the side where the conversion layer 14 is formed. Figure 7 yes Figure 6 AA line cross-sectional view of the radiation detector 10 in FIG.

[0148] like Figure 7 As shown in FIG. 1 , the conversion layer 14 of the embodiment of this example has a tendency that the thickness becomes thinner as it is viewed from the outside as a whole, and thus has a slope that the thickness becomes thinner as it is viewed from the outside. In the embodiment of this example, the average value of the thickness of the conversion layer 14 from the center of the conversion layer 14 to a predetermined range, which can be regarded as being approximately constant when manufacturing errors and measurement errors are ignored, is used as a reference. For example, Figure 8 As shown in FIG. 1 , the peripheral region where the relative film thickness to the reference thickness (hereinafter referred to as “relative film thickness”) is 90% or less is referred to as “peripheral portion (peripheral portion 14C)”. Figure 8 As shown in FIG. 1 , the region of the conversion layer 14 surrounded by the peripheral portion 14C is referred to as the “central portion (central portion 14B)”. In other words, the “central portion” refers to a region including at least a portion of the conversion layer 14 having a substantially constant thickness and also including a portion having a relative thickness exceeding 90%. Figure 7 as well as Figure 8As shown, the pixel region 35 is smaller than the central portion 14B, and the pixel region 35 is covered by the central portion 14B.

[0149] In the embodiment of this example, as a specific example, the area within 5 mm from the outer periphery of the conversion layer 14 and the area with a relative film thickness of 90% or less of the outer periphery is referred to as the "peripheral portion (peripheral portion 14C)". Figure 7 as well as Figure 8 As shown in FIG. 1 and FIG. 2 , in the peripheral portion 14C, the thickness of the conversion layer 14 tends to gradually become thinner toward the outer periphery (edge).

[0150] In addition, in the embodiment of this example, as an example in which the thickness of the conversion layer 14 becomes thinner toward the periphery, a method in which the thickness gradually becomes thinner with a certain inclination of an inclination angle θ is illustrated, but it is not limited to this method, and for example, the thickness may change in a step-like manner.

[0151] The method for measuring the tilt angle θ is not particularly limited, but in the present exemplary embodiment, as an example, in the method for measuring the tilt angle θ, a portion of the end of the conversion layer 14 is peeled off from the TFT substrate 12 at four locations at equal intervals on one side of the rectangular conversion layer 14 to prepare samples. The four samples are polished to obtain cross sections, and then the cross sections are observed using an optical microscope to perform the measurement. The average value of the measured values ​​of the four samples is taken as the tilt angle θ at the side of the conversion layer 14 prepared as the sample.

[0152] Furthermore, if Figure 6 as well as Figure 7 As shown in FIG. 1 , the laminated body 19 of the radiation detector 10 of the present exemplary embodiment further includes a bonding layer 16 and an adhesive layer 20, which is different from the laminated body 19 of the first exemplary embodiment. Fig.10 2 is a cross-sectional view schematically showing a cross section of an example of the bonding layer 16, the adhesive layer 20, and the protective layer 22 of the embodiment of this example. Fig.10 As shown, in the embodiment of this example, as an example, the protective layer 22 is a laminated film in which a PET film 22A, an aluminum foil film 22B, and a PET film 22C are laminated.

[0153] The adhesive layer 16 is used as an example Figure 6 as well as Figure 7 As shown in FIG. 1 , the adhesive layer 16 is disposed on a region including a portion of the peripheral portion 14C and the entire central portion 14B of the conversion layer 14. In other words, the adhesive layer 16 covers a portion of the central portion 14B and the peripheral portion 14C of the conversion layer 14. Fig. 9 As shown, in the radiation detector 10 of the present exemplary embodiment, the front end of the conversion layer 14 intrudes into the adhesive layer 16 .

[0154] The bonding layer 16 of the embodiment of this example is a reflective bonding layer that reflects the light converted by the conversion layer 14. In the embodiment of this example, as an example of the bonding layer 16, a white bonding layer obtained by dispersing inorganic white powder in a bonding resin is used. In addition, in the embodiment of this example, "white" refers to a state in which visible light of all wavelengths is diffusely reflected, and refers to a "mirror surface" when light is reflected in a directionality. In addition, the "reflectivity" of the reflected light in the bonding layer 16, etc. refers to a state in which the average value of the reflectivity of light of 500nm to 550nm is greater than 80%.

[0155] In addition, "adhesive layer" and "adhesive layer" are directly connected layers, and in the embodiment of this example, they refer to layers that have the function of not easily peeling the conversion layer 14 and the base material 18 from the adhesive layer 16. In addition, "adhesive layer" and "adhesive layer" refer to layers that are bonded to the surface of a solid by some force that is not limited to chemical bonding.

[0156] As an adhesive resin, for example, acrylic paste can be cited. As an inorganic white powder, a powder containing at least one of titanium oxide (TiO2), barium sulfate (BaSO4), aluminum oxide (Al2O3), magnesium oxide (MgO), and calcium oxide (CaO) can be cited. As an example, in the embodiment of this example, white powder is dispersed in a transparent paste (resin) as a filler to obtain a white adhesive layer.

[0157] like Fig.10 As shown, the bonding layer 16 of the embodiment of this example is formed on the substrate 18, the substrate 18 is arranged on the adhesive layer 20 side, and the bonding layer 16 is arranged on the conversion layer 14 (in Fig.10 As an example of the material of the substrate 18, reflective white PET (PolyEthylene Terephthalate) that reflects light can be cited. Not limited to the embodiment of this example, the substrate 18 may not be reflective. Specifically, a material that does not reflect the light converted by the conversion layer 14, such as a translucent material, can be used, but it is preferred to use a reflective material as in the embodiment of this example. In this case, since the light that is not completely reflected (missed) by the adhesive layer 16 can be reflected by the substrate 18, the reflectivity of the adhesive layer 16 and the substrate 18 as a whole can be improved.

[0158] In addition, white PET refers to PET with white pigments such as TiO2 and barium sulfate added. In addition, polyester-based high-reflection sheets are sheets (films) with a multilayer structure in which a plurality of thin polyester sheets are overlapped. In addition, foamed white PET is white PET with a porous surface.

[0159] In addition, if the thickness of the adhesive layer 16 and the substrate 18 combined becomes thicker, the height difference between the upper surface of the outer peripheral portion of the adhesive layer 16 and the substrate 18 and the upper surface of the conversion layer 14 becomes larger. If the height difference is large, when the adhesive layer 16 having the protective layer 22 attached to the conversion layer 14 is bonded to the TFT substrate 12 having the conversion layer 14 formed thereon, the protective layer 22 may float up at the height difference portion. In addition, if the thickness of the adhesive layer 16 and the substrate 18 combined becomes thicker, it can be said that it becomes a state of viscosity, so that it is sometimes difficult to bend along the inclination of the peripheral portion 14C of the conversion layer 14, and it becomes difficult to process. On the other hand, the thinner the thickness of the adhesive layer 16 becomes, the lower the reflectivity. If the reflectivity decreases, the image quality of the radiographic image obtained by the radiation detector 10 also tends to decrease. Therefore, the thickness of the adhesive layer 16 and the substrate 18 is preferably determined from the perspective of the desired reflectivity (e.g., 80%) based on the image quality of the radiographic image obtained by the radiation detector 10 and the perspective of manufacturing and processing.

[0160] As an example, the adhesive layer 20 is Figure 6 as well as Figure 7 The area covered as shown includes the area from the end of the adhesive layer 16 to the surface of the TFT substrate 12, specifically, the entire conversion layer 14 provided with the adhesive layer 16 and a part of the surface of the TFT substrate 12. In other words, in the radiation detector 10 of the present exemplary embodiment, the adhesive layer 20 covering the entire conversion layer 14 provided with the adhesive layer 16 is directly fixed (bonded) to a part of the surface of the TFT substrate 12. The adhesive layer 20 has the function of fixing the adhesive layer 16 and the protective layer 22 to the TFT substrate 12 and the conversion layer 14. Examples of the material of the adhesive layer 20 include acrylic adhesives, hot melt adhesives, and silicone adhesives. Examples of acrylic adhesives include urethane acrylates, acrylic resin acrylates, and epoxy acrylates. Examples of hot melt adhesives include thermoplastic plastics such as EVA (ethylene vinyl acetate copolymer resin), EAA (ethylene and acrylic acid copolymer resin), EEA (ethylene-ethyl acrylate copolymer resin), and EMMA (ethylene-methyl methacrylate copolymer). In addition, in the present exemplary embodiment, the adhesive layer 20 has an adhesive force stronger than the adhesive layer 16 .

[0161] As an example of a method of manufacturing the radiation detector 10 according to the present exemplary embodiment, the following method can be cited.

[0162] The adhesive layer 16 is applied in advance to the base material 18 of a desired size to match the radiation detector 10. The protective layer 22 is applied to the adhesive layer 20 of a desired size to match the radiation detector 10. Then, the base material 18 of the adhesive layer 16 and the protective layer 22 of the adhesive layer 20 are attached to each other, thereby preparing the Fig.10 In the embodiment of this example, as shown in FIG. Fig.10 As shown, the base material 18 and the adhesive layer 16 are smaller than the adhesive layer 20 and the protective layer 22 , and an adhesive portion 21 is provided around the base material 18 and the adhesive layer 16 .

[0163] Then, similarly to the radiation detector 10 of the first exemplary embodiment, on the TFT substrate 12 on which the conversion layer 14 is formed, the above-mentioned laminated film is configured to cover the entire conversion layer 14, and the adhesive portion 21 is attached to the TFT substrate 12, thereby sealing the conversion layer 14 to form a laminated body 19.

[0164] Then, the reinforcing substrate 40 provided with the spacer 46 prepared in the same manner as in the first exemplary embodiment is attached to the TFT substrate 12 on which the laminate 19 is formed, thereby sealing the laminate 19. Figure 5 ), the TFT substrate 12 is removed from the support 50 (see Figure 5 ) peel off.

[0165] Thus, in the radiation detector 10 of the present exemplary embodiment, the adhesive layer 20 and the protective layer 22 cover the entirety of the bonding layer 16. In addition, the adhesive layer 20 and the protective layer 22 are directly fixed to the TFT substrate 12.

[0166] In order to collect (reflect) more light converted by the conversion layer 14 onto the TFT substrate 12, the peripheral portion 14C of the conversion layer 14 is also covered with an adhesive layer 16 having a function of reflecting light, so that the adhesive layer 16 tends to be easily peeled off from the conversion layer 14 at the inclined peripheral portion 14C. In addition, since the base material 11 of the TFT substrate 12 is flexible, the TFT substrate 12 bends, so that the adhesive layer 16 tends to be easily peeled off from the conversion layer 14. In contrast, according to the radiation detector 10 of the embodiment of this example, the peeling of the adhesive layer 16 can be suppressed by the above-mentioned structure, and thus the peeling of the conversion layer 14 can be suppressed.

[0167] In addition, according to the radiation detector 10 of the embodiment of this example, since the adhesive layer 16 has both functions of a layer having a function of reflecting light and a layer having adhesive properties, the thickness can be increased compared to the case where each is provided as a different layer. Therefore, according to the radiation detector 10 of the embodiment of this example, the adhesive force can be increased, and thus the adhesive layer 16 becomes more difficult to peel off.

[0168] In addition, the distance between the conversion layer 14 and the layer having the function of reflecting light is preferably narrow from the viewpoints of MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency). In the radiation detector 10 of the embodiment of this example, a reflective adhesive layer 16 having the function of reflecting light is directly formed on the conversion layer 14. Therefore, according to the radiation detector 10 of the embodiment of this example, the distance between the conversion layer 14 and the layer having the function of reflecting light can be further narrowed. Therefore, according to the radiation detector 10 of the embodiment of this example, compared with the case where an adhesive layer is provided between the layer having the function of reflecting light and the conversion layer, the peeling of the layer having the function of reflecting light can be suppressed without reducing the image quality of the radiation image.

[0169] like Figure 7 As shown, in the radiation detector 10 of the present exemplary embodiment, a reinforcing substrate 40 is also provided on the first surface 19A of the laminate 19. Therefore, in the radiation detector 10 of the present exemplary embodiment, it is also possible to suppress the TFT substrate 12 from being greatly bent and to suppress the conversion layer 14 from being damaged.

[0170] [Implementation of the third example]

[0171] Next, the implementation of the third example is described. Fig.11 2 is a cross-sectional view of an example of the radiation detector 10 according to the embodiment of this example.

[0172] like Fig.11 As shown, in the radiation detector 10 of the present exemplary embodiment, a reinforcing substrate 41 is provided on the second surface 19B of the laminate 19 on the side of the TFT substrate 12. Fig.11 As shown in FIG. 1 , a protective film 42 is provided between the TFT substrate 12 and the reinforcing substrate 41 , similarly to the above-described exemplary embodiments.

[0173] The reinforcing substrate 41 is similar to the reinforcing substrate 40, and has a higher rigidity than the base material 11, and a smaller dimensional change (deformation) with respect to a force applied in a direction perpendicular to the surface opposed to the first surface 19B than a dimensional change with respect to a force applied in a direction perpendicular to the first surface 19B of the base material 11. In addition, the thickness of the reinforcing substrate 41 of the embodiment of this example is thicker than the thickness of the base material 11 and thinner than the thickness of the reinforcing substrate 40. In addition, the reinforcing substrate 41 preferably has the same characteristics as the reinforcing substrate 40. As a material of the reinforcing substrate 41 of the embodiment of this example, a thermoplastic resin is preferably used, and the same material as the reinforcing substrate 40 can be used, but different materials can be used for the reinforcing substrate 40 and the reinforcing substrate 41.

[0174] The radiation detector 10 of the present exemplary embodiment is manufactured by, for example, the same manufacturing method as the above-mentioned manufacturing method of the radiation detector 10 in the first exemplary embodiment, wherein the reinforcing substrate 40 provided with the spacer 46 is attached to the TFT substrate 12 provided with the laminate 19, and then the TFT substrate 12 is peeled off from the support body 50. Then, the protective film 42 and the reinforcing substrate 41 are provided on the first surface 19A of the TFT substrate 12 by coating or the like, thereby manufacturing the radiation detector 10 of the present exemplary embodiment.

[0175] In the radiation detector 10 of the present exemplary embodiment, a reinforcing substrate 40 is provided on the first surface 19A of the stacked body 19, and a reinforcing substrate 41 is provided on the second surface 19B of the stacked body 19. Therefore, compared with the radiation detector 10 of the above-described exemplary embodiments, it is possible to further suppress the TFT substrate 12 from being greatly bent, and to suppress the conversion layer 14 from being destroyed.

[0176] [Implementation of the fourth example]

[0177] Next, the implementation of the fourth example is described. Fig.12 2 is a cross-sectional view of an example of the radiation detector 10 according to the embodiment of this example.

[0178] like Fig.12 As shown in FIG. 1 , the radiation detector 10 of the present exemplary embodiment is provided with a filler 70 between the first surface 12A of the TFT substrate 12 on which the laminate 19 is formed and the adhesive layer 48. That is, in the radiation detector 10 of the present exemplary embodiment, the filler 70 is filled between the first surface 12A of the TFT substrate 12 on which the laminate 19 is formed and the adhesive layer 48. Figure 7 ) is different in that a filling material 70 is filled in the space between the TFT substrate 12 formed with the stacked body 19 and the reinforcing substrate 40 (adhesive layer 48).

[0179] The material of the filling material 70 is not particularly limited, and a sealing material of a general semiconductor material can be used. The method of setting the filling material 70 is not particularly limited, and for example, a filling material 70 having fluidity may be injected between (the gap) the TFT substrate 12 on which the laminate 19 is stacked and the reinforcing substrate 40 on which the adhesive layer 48 is provided, and the filling material 70 is solidified, thereby setting the filling material 70. In addition, for example, in a state where the laminate 19 is formed on the TFT substrate 12, a filling material 70 having fluidity is placed at a place where the filling material 70 is to be filled, and the reinforcing substrate 40 on which the spacer 46 is attached is attached to the laminate 19 and the filling material 70, thereby setting the filling material 70.

[0180] In this way, the radiation detector 10 of the present exemplary embodiment fills the filling material 70 between the laminated body 19 and the reinforcing substrate 40, and the reinforcing substrate 40 protruding forward (toward the end side of the TFT substrate 12) from the central portion 14B of the conversion layer 14 is supported by the filling material 70. Therefore, according to the radiation detector 10 of the present exemplary embodiment, the reinforcing substrate 40 is stably provided and is not easily peeled off from the TFT substrate 12 and the laminated body 19. In addition, according to the radiation detector 10 of the present exemplary embodiment, since the laminated body 19 is fixed to the TFT substrate 12 by the reinforcing substrate 40 and the filling material 70, the conversion layer 14 is not easily peeled off from the TFT substrate 12.

[0181] In addition, Fig.12 In the example shown, the gap between the TFT substrate 12 formed with the laminate 19 and the reinforcing substrate 40 is filled with the filler 70 without any gap, but the present invention is not limited to this. Fig.12 In the embodiment shown, for example, a gap (a region not filled with the filling material 70 ) may be provided in a portion between the TFT substrate 12 on which the laminated body 19 is formed and the reinforcing substrate 40 .

[0182] In the radiation detector 10 of the present exemplary embodiment, since the reinforcing substrate 40 is provided on the first surface 19A of the laminate 19, similarly to the radiation detector 10 of the above-mentioned exemplary embodiments, it is possible to suppress the TFT substrate 12 from being bent to a large extent and to suppress the conversion layer 14 from being damaged.

[0183] [Implementation of the Fifth Example]

[0184] Next, the fifth exemplary embodiment will be described. In addition, the structure of the adhesive layer 16 of the radiation detector 10 of the present exemplary embodiment and the region where the adhesive layer 16 is provided are different from those of the second to fourth exemplary embodiments described above, and therefore the structure of the adhesive layer 16 and the region where the adhesive layer 16 is provided will be described with reference to the accompanying drawings. Fig.13A cross-sectional view of an example of the radiation detector 10 according to the embodiment of this example is shown in FIG. Fig.14 2 is a cross-sectional view schematically showing a cross section of an example of the adhesive layer 16 and the protective layer 22 according to the embodiment of this example.

[0185] like Fig.13 As shown, in the radiation detector 10 of the present exemplary embodiment, the adhesive layer 16 is provided on the entire region of the conversion layer 14 including the central portion 14B and the peripheral portion 14C, and on the region of the TFT substrate 12 near the periphery of the conversion layer 14. Fig.13 as well as Fig.14 As shown, in the radiation detector 10 of the present exemplary embodiment, the protective layer 22 is directly provided on the adhesive layer 16 and the adhesive layer 20 is not provided. This point is different from the radiation detectors 10 of the second to fourth exemplary embodiments.

[0186] In the embodiment of this example, as an example of the adhesive layer 16, an adhesive layer formed of a thermoplastic resin in which an inorganic white powder is dispersed is used. As the thermoplastic resin in this case, a so-called hot melt resin can be used, and as a specific example, polyolefin series, polyester series, and EVA can be used. As the inorganic white powder, as in the adhesive layer 16 described above in the first to third exemplary embodiments, powders containing at least one of titanium oxide (TiO2), barium sulfate (BaSO4), aluminum oxide (Al2O3), magnesium oxide (MgO), and calcium oxide (CaO) can be listed.

[0187] like Fig.14 As shown, as an example, the protective layer 22 in the radiation detector 10 of the embodiment of this example is also a laminated film in which a PET film 22A, an aluminum foil film 22B, and a PET film 22C are laminated.

[0188] As an example of a method of manufacturing the radiation detector 10 according to the present exemplary embodiment, the following method can be cited.

[0189] A structure is prepared in advance in which the adhesive layer 16 is directly applied to the protective layer 22 set to a desired size in accordance with the radiation detector 10. In addition, in the radiation detector 10 of the present exemplary embodiment, since the adhesive layer 16 also plays a role of sealing the end of the protective layer 22, the adhesive layer 16 is applied to the entire surface of the protective layer 22. On the other hand, the laminated body 19 is formed in advance on the TFT substrate 12 as described above. Then, the adhesive layer 16 applied to the protective layer 22 is attached to the TFT substrate 12, thereby sealing the conversion layer 14.

[0190] In the radiation detector 10 of the present exemplary embodiment, since the adhesive layer 16 covers the entire conversion layer 14 and also covers the surface of the substrate 11, the adhesive layer 16 can be sufficiently fixed to the TFT substrate 12 and the conversion layer 14. In addition, in the radiation detector 10 of the present exemplary embodiment, the adhesive layer 16 is directly provided on the conversion layer 14. Therefore, in the radiation detector 10 of the present exemplary embodiment, as in the radiation detector 10 of the second to fourth exemplary embodiments, the peeling of the adhesive layer 16 can be suppressed without reducing the image quality of the radiographic image.

[0191] As described above, the radiation detector 10 of each of the above-mentioned exemplary embodiments includes: a TFT substrate 12, a plurality of pixels 30 for accumulating charges generated based on light converted from radiation are formed in a pixel area 35 of a first surface 12A on the opposite side of a surface of a substrate 11 having a particle layer 11L and having a particle layer 11L, the substrate 11 being flexible and made of resin, the particle layer 11L including inorganic particles 11P having an average particle diameter of not less than 0.05 μm and not more than 2.5 μm; a conversion layer 14 provided on the first surface 12A of the substrate 11 on which the pixel area 35 is provided, and converts radiation into light; and at least one of an enhancement substrate 41 provided on a surface on the TFT substrate 12 side, i.e., a second surface 19B, of a stacked body 19 on which the TFT substrate 12 and the conversion layer 14 are stacked, and an enhancement substrate 40 provided on a surface on the conversion layer 14 side, i.e., a first surface 19A.

[0192] In the radiation detector 10 of each of the above-described exemplary embodiments, since at least one of the reinforcing substrate 40 and the reinforcing substrate 41 is provided on the laminate 19, it is possible to suppress the TFT substrate 12 from being greatly bent. Therefore, according to the radiation detector 10 of each of the above-described exemplary embodiments, it is possible to suppress the conversion layer 14 from being destroyed in the radiation detector 10 alone.

[0193] In addition, the radiation detector 10 only needs to include at least one of the reinforcing substrate 40 and the reinforcing substrate 41. Therefore, the radiation detector 10 is not limited to the above-described exemplary embodiments, and may include only the reinforcing substrate 41.

[0194] In addition, the sizes of the reinforcing substrate 40 and the reinforcing substrate 41 are not limited to the above-mentioned exemplary embodiments. Fig.15 As shown in the example, the end (outer periphery) of the reinforcing substrate 40 and the bonding layer 48 and the end (outer periphery) of the protective layer 22 and the adhesive layer 20 may be at the same position. In addition, it is preferred that at least one of the reinforcing substrate 40 and the reinforcing substrate 41 covers an area larger than the area covered by the conversion layer 14 on the first surface 12A of the TFT substrate 12.

[0195] In addition, if Fig.16 As shown in the example, it is preferable that a layer 90 formed of an inorganic material is provided between the substrate 11 and the pixel 30, especially the gate electrode 80 of the TFT 32 of the pixel 30. Fig.16 In the example shown, SiNx, SiOx, etc. are listed as inorganic materials in this case. The drain electrode 81 and the source electrode 82 of the TFT 32 are formed in the same layer, and the gate electrode 80 is formed between the layer where the drain electrode 81 and the source electrode are formed and the substrate 11. In addition, a layer 90 formed of an inorganic material is provided between the substrate 11 and the gate electrode 80.

[0196] In addition, the size of the pixel array 31 (pixel region 35) is not limited to the above-mentioned embodiments. For example, in the above-mentioned embodiments of the second to fifth embodiments, the size of the pixel array 31 (pixel region 35) is smaller than the size of the central portion 14B of the conversion layer 14, and the periphery of the pixel array 31 (pixel region 35) is located within the central portion 14B. However, the pixel array 31 (pixel region 35) is not limited to the above-mentioned embodiments, and may also be Fig.17 As in the example of the radiation detector 10 shown, the size of the pixel array 31 (pixel region 35) is larger than the size of the central portion 14B of the conversion layer 14, and the periphery of the pixel array 31 (pixel region 35) reaches the peripheral portion 14C of the conversion layer 14. In addition, the amount of light converted from radiation by the conversion layer 14 tends to decrease as the thickness of the conversion layer 14 becomes thinner. Therefore, similar to the radiation detector 10 of the above-mentioned exemplary embodiments, the thickness of the conversion layer 14 on the pixel array 31 (pixel region 35) in which the periphery of the pixel array 31 (pixel region 35) is located within the central portion 14B becomes approximately uniform, thereby improving the sensitivity characteristics of the pixel region 35. On the other hand, in Fig.17 In the radiation detector 10 of the example shown, the size of the entire radiation detector 10 can be reduced.

[0197] In addition, in the above-mentioned exemplary embodiments, Figure 1 Although the pixel 30 is described as being arranged in a two-dimensional matrix as shown, it is not limited thereto. For example, it can be arranged in one dimension or in a honeycomb arrangement. In addition, the shape of the pixel is not limited, and can be a rectangle or a polygon such as a hexagon. Furthermore, it is self-evident that the shape of the pixel array 31 (pixel area 35) is not limited.

[0198] In addition, the shape of the conversion layer 14 is not limited to the above-mentioned embodiments. In the above-mentioned embodiments, the shape of the conversion layer 14 is described as being rectangular, which is the same as the shape of the pixel array 31 (pixel region 35), but the shape of the conversion layer 14 may not be the same as the pixel array 31 (pixel region 35). In addition, the shape of the pixel array 31 (pixel region 35) may not be rectangular, for example, it may be other polygonal or circular.

[0199] In addition, in the above-mentioned exemplary embodiments, as an example, the conversion layer 14 of the radiation detector 10 is described as a scintillator containing CsI, but the conversion layer 14 may also be a scintillator in which GOS or the like is dispersed in an adhesive such as a resin. The conversion layer 14 using GOS is formed, for example, by directly applying an adhesive in which GOS is dispersed on the TFT substrate 12, the peeling layer, etc., and then drying and curing it. As a method for forming the conversion layer 14, for example, the Gisa method of applying a coating liquid to the area where the conversion layer 14 is to be formed while controlling the thickness of the coating film may be adopted. In addition, in this case, a surface treatment for activating the surface of the pixel array 31 may be performed before applying the adhesive in which GOS is dispersed. In addition, an interlayer insulating film or a surface protective film may be provided on the surface of the pixel array 31.

[0200] The radiation detector 10 of each of the above-described exemplary embodiments may be applied to an ISS-type radiation imaging device that irradiates radiation from the TFT substrate 12 side, or to a PSS-type radiation imaging device that irradiates radiation from the conversion layer 14 side.

[0201] exist Fig.18 2 is a cross-sectional view showing an example of a state in which the radiation detector 10 of the first exemplary embodiment is applied to the ISS type radiation imaging device 1 .

[0202] like Fig.18 As shown, the radiation detector 10, the power supply unit 108, and the control substrate 110 are arranged in a direction intersecting the incident direction of the radiation in the housing 120. The radiation detector 10 is arranged so that the side of the pixel array 31 where the conversion layer 14 is not provided faces the imaging surface 120A side of the housing 120 irradiated with the radiation that has passed through the subject.

[0203] The control substrate 110 is a substrate on which an image memory 210 for storing image data corresponding to the charge read out from the pixel 30 of the pixel array 31 and a control unit 212 for controlling the charge read out from the pixel 30 are formed, and is electrically connected to the pixel 30 of the pixel array 31 via a flexible cable 112 including a plurality of signal wirings. Fig.18In the radiation imaging device 1 shown, a driving unit 103 that controls the switching state of the TFT 32 of the pixel 30 under the control of the control unit 212 and a signal processing unit 104 that generates and outputs image data corresponding to the charge read from the pixel 30 are provided on a so-called COF on a flexible cable 112, but at least one of the driving unit 103 and the signal processing unit 104 may be formed on the control substrate 110.

[0204] Furthermore, the control substrate 110 is connected to a power supply unit 108 that supplies power to the image memory 210 , the control unit 212 , and the like formed on the control substrate 110 via a power supply line 114 .

[0205] The shell 120 is preferably lightweight, has a low absorption rate of radiation R, especially X-rays, and is highly rigid, and is preferably made of a material with a sufficiently high elastic modulus. As the material of the shell 120, it is preferred to use a material with a bending elastic modulus of 10,000 MPa or more. As the material of the shell 120, carbon or CFRP (Carbon Fiber Reinforced Plastics) having a bending elastic modulus of about 20,000 to 60,000 MPa can be appropriately used.

[0206] During the radiographic imaging of radiographic images by the radiographic imaging device 1, a load from the subject is applied to the imaging surface 120A of the housing 120. If the rigidity of the housing 120 is insufficient, the TFT substrate 12 may bend due to the load from the subject, which may cause problems such as damage to the pixels 30. By housing the radiation detector 10 in the housing 120 made of a material having a bending elastic modulus of 10,000 MPa or more, the bending of the TFT substrate 12 due to the load from the subject can be suppressed.

[0207] exist Fig.18 In the housing 120 of the radiographic imaging device 1 shown, a sheet 116 is further provided on the side where the radiation that has passed through the radiation detector 10 is emitted. As the sheet 116, for example, a copper sheet can be cited. The copper sheet is less likely to generate secondary radiation due to the incident radiation, and thus has a function of preventing scattering to the rear, i.e., the conversion layer 14 side. In addition, the sheet 116 preferably covers at least the entire surface of the conversion layer 14 on the side where the radiation is emitted, and preferably covers the entire conversion layer 14.

[0208] In addition, Fig.18In the housing 120 of the radiation imaging device 1 shown, a protective layer 117 is further provided on the side where radiation is incident (the imaging surface 120A side). As the protective layer 117, a moisture-proof film such as an Alpet (registered trademark) sheet, a Parylene (registered trademark) film, or an insulating sheet such as PET, which is a sheet of aluminum laminated by bonding aluminum foil or the like to an insulating sheet (film), etc., can be used. The protective layer 117 has a moisture-proof function and an anti-static function for the pixel array 31. Therefore, the protective layer 117 preferably covers at least the entire surface of the side where radiation is incident on the pixel array 31, and preferably covers the entire surface of the TFT substrate 12 on the side where radiation is incident.

[0209] In addition, Fig.18 , the power supply unit 108 and the control substrate 110 are both provided on one side of the radiation detector 10, specifically, on one side of the rectangular pixel array 31, but the positions of providing the power supply unit 108 and the control substrate 110 are not limited to Fig.18 For example, the power supply unit 108 and the control substrate 110 may be disposed on each of two opposing sides of the pixel array 31, or may be disposed on each of two adjacent sides.

[0210] Furthermore, for example, the thickness may be different between the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided and the portion of the housing 120 where the radiation detector 10 is provided. Fig.18 As shown, the power supply unit 108 and the control substrate 110 are each thicker than the radiation detector 10 in many cases. In this case, the thickness of the portion of the housing 120 where the radiation detector 10 is provided may be made thinner than the thickness of the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided (see Figure 56-58 , details to be described later). In addition, in this way, when the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are respectively provided, and the portion of the housing 120 where the radiation detector 10 is provided have different thicknesses, if a height difference is generated at the boundary between the two portions, it may cause discomfort to the subject who touches the boundary, and therefore the boundary is preferably provided in an inclined state.

[0211] In addition, for example, the material of the housing 120 may be different between the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided. Furthermore, for example, the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided may be configured as separate bodies.

[0212] In addition, Fig.192 is a cross-sectional view showing another example of a state in which the radiation detector 10 of the first exemplary embodiment is applied to the ISS type radiation imaging device 1 .

[0213] like Fig.19 As shown, in the housing 120 , the power supply unit 108 and the control board 110 are arranged in a direction intersecting the incident direction of the radiation, and the radiation detector 10 , the power supply unit 108 and the control board 110 are arranged in the incident direction of the radiation.

[0214] In addition, Fig.19 In the radiation imaging device 1 shown, a base 118 for supporting the radiation detector 10 and the control board 110 is provided between the control board 110 and the power supply unit 108 and the sheet 116. The base 118 is made of, for example, carbon.

[0215] In addition, the configuration and manufacturing method of the radiation detector 10 and the like described in the above-mentioned exemplary embodiments are merely examples and can, of course, be modified according to circumstances without departing from the gist of the present invention.

[0216] [Other exemplary embodiments]

[0217] First, refer to Figure 20 to Figure 41 Another exemplary embodiment of the reinforcing substrate 40 will be described.

[0218] like Figure 20 to Figure 40 As shown, a bonding layer 60 , a reflective layer 62 , an adhesive layer 64 , a protective layer 22 , and a bonding layer 48 may be provided between the conversion layer 14 and the enhancement substrate 40 .

[0219] The adhesive layer 60 covers the entire surface of the conversion layer 14 including the central portion 14B and the peripheral portion 14C of the conversion layer 14. The adhesive layer 60 has the function of fixing the reflective layer 62 on the conversion layer 14. The adhesive layer 60 preferably has light transmittance. As the material of the adhesive layer 60, for example, acrylic adhesives, hot melt adhesives and silicone adhesives can be used. As acrylic adhesives, for example, polyurethane acrylate, acrylic resin acrylate, and epoxy acrylate can be listed. As hot melt adhesives, for example, thermoplastic plastics such as EVA (ethylene-vinyl acetate copolymer resin), EAA (copolymer resin of ethylene and acrylic acid), EEA (ethylene-ethyl acrylate copolymer resin), and EMMA (ethylene-methyl methacrylate copolymer) can be listed. The thickness of the adhesive layer 60 is preferably 2 μm or more and 7 μm or less. By setting the thickness of the adhesive layer 60 to be 2 μm or more, the effect of fixing the reflective layer 62 on the conversion layer 14 can be fully exerted. Furthermore, the risk of an air layer being formed between the conversion layer 14 and the reflective layer 62 can be suppressed. If an air layer is formed between the conversion layer 14 and the reflective layer 62, multiple reflections may occur in which light emitted from the conversion layer 14 is repeatedly reflected between the air layer and the conversion layer 14 and between the air layer and the reflective layer 62. In addition, by setting the thickness of the adhesive layer 60 to 7 μm or less, it is possible to suppress the decrease in MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency).

[0220] The reflective layer 62 covers the entire surface of the adhesive layer 60. The reflective layer 62 has a function of reflecting the light converted by the conversion layer 14. The reflective layer 62 is preferably made of an organic material. As the material of the reflective layer 62, for example, white PET, TiO2, Al2O3, foamed white PET, polyester-based high-reflective sheet, and mirror-reflective aluminum can be used. The thickness of the reflective layer 62 is preferably greater than 10 μm and less than 40 μm.

[0221] The adhesive layer 64 covers the entire surface of the reflective layer 62. The end of the adhesive layer 64 extends to the surface of the TFT substrate 12. That is, the adhesive layer 64 is bonded to the TFT substrate 12 at its end. The adhesive layer 64 has the function of fixing the reflective layer 62 and the protective layer 22 to the conversion layer 14. As the material of the adhesive layer 64, the same material as the material of the adhesive layer 60 can be used, but it is preferred that the adhesive force of the adhesive layer 64 is greater than the adhesive force of the adhesive layer 60.

[0222] The protective layer 22 covers the entire surface of the adhesive layer 64. That is, the protective layer 22 is provided to cover the entire conversion layer 14 and its end portion covers a portion of the TFT substrate 12. The protective layer 22 functions as a moisture-proof film that prevents moisture from entering the conversion layer 14. As a material for the protective layer 22, for example, an organic film containing an organic material such as PET, PPS, OPP, PEN, PI, etc. can be used. In addition, as the protective layer 22, a sheet of Alpet (registered trademark) can be used.

[0223] The reinforcing substrate 40 is provided on the surface of the protective layer 22 via the adhesive layer 48. As the material of the adhesive layer 48, for example, the same material as that of the adhesive layer 60 and the adhesive layer 48 can be used.

[0224] exist Fig. 20 In the example shown, the reinforcing substrate 40 extends to the region corresponding to the central portion 14B and the peripheral portion 14C of the conversion layer 14, and the outer periphery of the reinforcing substrate 40 is bent to be in a state of being inclined along the peripheral portion 14C of the conversion layer 14. The reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in both the region corresponding to the central portion 14B and the region corresponding to the peripheral portion 14C of the conversion layer 14. Fig. 20 In the illustrated example, the end portion of the reinforcing substrate 40 is arranged in a region corresponding to the peripheral portion 14C of the conversion layer 14 .

[0225] like Fig.21 As shown, the reinforcing substrate 40 may be provided only in the region corresponding to the central portion 14B of the conversion layer 14. In this case, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the region corresponding to the central portion 14B of the conversion layer 14.

[0226] like Fig. 22 As shown, when the reinforcing substrate 40 extends to the region corresponding to the central portion 14B and the peripheral portion 14C of the conversion layer 14, the reinforcing substrate 40 may not have a bent portion along the inclination in the peripheral portion of the conversion layer 14. In this case, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the region corresponding to the central portion 14B of the conversion layer 14. In the region corresponding to the peripheral portion 14C of the conversion layer 14, a space corresponding to the inclination in the peripheral portion 14C of the conversion layer 14 is formed between the reinforcing substrate 40 and the reinforcing substrate 40.

[0227] Here, the terminal 113 provided in the connection area of ​​the outer peripheral portion of the TFT substrate 12 is connected to the flexible cable 112. The TFT substrate 12 is connected to the control substrate (refer to the control substrate 110, Fig.54When the TFT substrate 12 is bent, the flexible cable 112 may be peeled off from the TFT substrate 12 or may be out of position. In this case, it is necessary to reconnect the flexible cable 112 to the TFT substrate 12. This reconnection of the flexible cable 112 to the TFT substrate 12 is called rework. Figure 20 to Figure 22 As shown, by arranging the end of the reinforcing substrate 40 further inside than the end of the conversion layer 14 , rework can be performed more easily than in the case where the reinforcing substrate 40 extends to the vicinity of the connection region.

[0228] like Figure 23 to Figure 26 As shown in FIG. 1 , the reinforcing substrate 40 may be arranged such that its end is arranged outside the end of the conversion layer 14 and is aligned with the end of the adhesive layer 64 and the protective layer 22 extending onto the TFT substrate 12. In addition, the position of the end of the reinforcing substrate 40 does not need to be completely aligned with the position of the end of the adhesive layer 64 and the protective layer 22.

[0229] exist Fig.23 In the example shown, the reinforcing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14B of the conversion layer 14, and in the area corresponding to the peripheral portion 14C of the conversion layer 14, and further in the area outside it, a space corresponding to the inclination of the peripheral portion 14C of the conversion layer 14 is formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40.

[0230] exist Fig.24 In the example shown, a filler 70 is provided in the area corresponding to the peripheral portion 14C of the conversion layer 14 and in the area further outside the conversion layer 14, in the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40. The material of the filler 70 is not particularly limited, and for example, a resin can be used. Fig.24 In the example shown, in order to fix the reinforcing substrate 40 to the filling material 70 , the adhesive layer 48 is provided over the entire region between the reinforcing substrate 40 and the filling material 70 .

[0231] The method of forming the filling material 70 is not particularly limited. For example, after the bonding layer 48 and the reinforcing substrate 40 are sequentially formed on the conversion layer 14 covered by the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22, the filling material 70 having fluidity may be injected into the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and the filling material 70 may be solidified. In addition, for example, after the conversion layer 14, the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22 are sequentially formed on the TFT substrate 12, the filling material 70 may be formed, and the bonding layer 48 and the reinforcing substrate 40 may be sequentially formed to cover the conversion layer 14 and the filling material 70 covered by the bonding layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 22.

[0232] In this way, the filling material 70 is filled in the space formed between the conversion layer 14 (protective layer 22) and the strengthening substrate 40, thereby Fig.23 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filler 70, so the conversion layer 14 can be prevented from peeling off from the TFT substrate 12.

[0233] exist Fig.25 In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral edge portion 14C of the conversion layer 14, and also covers the portion of the adhesive layer 64 and the protective layer 22 covering the TFT substrate 12. In addition, the end of the reinforcing substrate 40 is aligned with the end of the adhesive layer 64 and the protective layer 22. In addition, the position of the end of the reinforcing substrate 40 does not need to be completely aligned with the position of the end of the adhesive layer 64 and the protective layer 22.

[0234] The ends of the reinforcing substrate 40, the adhesive layer 48, the protective layer 22, and the adhesive layer 64 are sealed by a sealing member 72. The sealing member 72 is preferably provided in an area from the surface of the TFT substrate 12 to the surface of the reinforcing substrate 40, and does not cover the pixel area 35. As a material for the sealing member 72, a resin can be used, and a thermoplastic resin is particularly preferred. Specifically, acrylic paste, polyurethane paste, and the like can be used as the sealing member 72. The reinforcing substrate 40 has higher rigidity than the protective layer 22, and a restoring force that eliminates the bending acts on the bent portion of the reinforcing substrate 40, thereby causing the protective layer 22 to peel off. By sealing the ends of the reinforcing substrate 40, the adhesive layer 48, the protective layer 22, and the adhesive layer 64 with the sealing member 72, the peeling of the protective layer 22 can be suppressed.

[0235] exist Fig.26 In the example shown, Fig.24Similarly to the manner shown, a filling material 70 is provided in the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40 in the region corresponding to the peripheral portion 14C of the conversion layer 14 and in the region further outside thereof. In addition, in the region corresponding to the end of the conversion layer 14, another reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in the region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A may also be formed of the same material as the reinforcing substrate 40. In the radiation detector 10, the deflection amount of the TFT substrate 12 is relatively large at the end of the conversion layer 14. In the region corresponding to the end of the conversion layer 14, by forming a laminated structure composed of the reinforcing substrates 40 and 40A, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0236] like Figure 23 to Figure 26 As shown, when the end of the reinforcing substrate 40 is arranged outside the end of the conversion layer 14 and coincides with the ends of the adhesive layer 64 and the protective layer 22, rework can be easily performed compared to the case where the reinforcing substrate 40 extends to the vicinity of the connection area.

[0237] In addition, if Figure 27 to Figure 30 As shown, the strengthening substrate 40 may be arranged such that its end is located outside the ends of the adhesive layer 64 and the protective layer 22 extending onto the TFT substrate 12 and inside the end of the TFT substrate 12 .

[0238] exist Fig. 27 In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14B of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14C of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14C of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0239] exist Fig.28 In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the second surface 12A of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 that forms a space between the TFT substrate 12 and extends by the spacer 46, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12. In addition, instead of providing the spacer 46 or in addition to providing the spacer 46, it is also possible to imitate Fig.24 In the example shown, the filling material is filled in the space formed between the conversion layer 14 (protective layer 22 ) and the reinforcing substrate 40 , and between the TFT substrate 12 and the reinforcing substrate 40 .

[0240] exist Fig.29 In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14C of the conversion layer 14, and also covers the portion of the adhesive layer 64 and the protective layer 22 covering the TFT substrate 12 and the TFT substrate 12 outside thereof. That is, the ends of the adhesive layer 64 and the protective layer 22 are sealed by the reinforcing substrate 40. The portion of the reinforcing substrate 40 extending onto the TFT substrate 12 is bonded to the TFT substrate 12 via the adhesive layer 48. In this way, by covering the ends of the adhesive layer 64 and the protective layer 22 with the reinforcing substrate 40, it is possible to suppress the peeling of the protective layer 22. Alternatively, it is also possible to imitate Fig.25 In the described example, the end portion of the strengthening substrate 40 is sealed by the sealing member 72 .

[0241] exist Fig.30 In the example shown, in a manner in which the end of the reinforcing substrate 40 is supported by the spacer 46, another reinforcing substrate 40A is further laminated via an adhesive layer 48A in a region of the surface of the reinforcing substrate 40 corresponding to the end of the conversion layer 14. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, rim) of the conversion layer 14. The reinforcing substrate 40A may be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the amount of deflection of the TFT substrate 12 at the end of the conversion layer 14 is relatively large. By forming a laminated structure composed of the reinforcing substrates 40 and 40A in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted. In addition, instead of providing the spacer 46, it is also possible to imitate Fig.24 In the illustrated example, the filling material 70 is filled in the space formed between the conversion layer 14 (protective layer 22 ) and the reinforcing substrate 40 , and between the TFT substrate 12 and the reinforcing substrate 40 .

[0242] like Figure 31 to Figure 35 As shown, the strengthening substrate 40 may also be arranged so that its end is aligned with the end of the TFT substrate 12. In addition, the position of the end of the strengthening substrate 40 does not need to be completely aligned with the position of the end of the TFT substrate 12.

[0243] exist Fig.31In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14B of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14C of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14C of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0244] exist Fig.32 In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 extending with a space formed between the TFT substrate 12 and the spacer 46, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12.

[0245] exist Fig.33 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In the embodiment of this example, the connection portion between the flexible cable 112 and the terminal 113 is covered with the filling material 70. In this way, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with the filling material 70, thereby Fig.31 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filling material 70, so that the conversion layer 14 can be prevented from peeling off from the TFT substrate 12. In addition, the connection portion between the flexible cable 112 and the terminal 113 is covered by the filling material 70, so that the flexible cable 112 can be prevented from peeling off.

[0246] exist Fig.34In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14C of the conversion layer 14, and the portion where the adhesive layer 64 and the protective layer 22 cover the TFT substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112 are also covered. The portions of the reinforcing substrate 40 extending onto the TFT substrate 12 and the flexible cable 112 are bonded to the TFT substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. The connection portion between the flexible cable 112 and the terminal 113 is covered by the flex reinforcing substrate 40, so that the peeling of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate equipped with electronic components is connected to the other end of the flexible cable 112, there is a possibility that relatively large deflection occurs in the TFT substrate 12 at the connection portion between the flexible cable 112 and the terminal 113. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the deflection of the TFT substrate 12 in this portion can be suppressed.

[0247] exist Fig.35 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with a filling material 70. In addition, in the region corresponding to the end of the conversion layer 14, another flexible reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A can be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the amount of deflection of the TFT substrate 12 is relatively large at the end of the conversion layer 14. In the region corresponding to the end of the conversion layer 14, by forming a laminated structure composed of the reinforcing substrates 40 and 40A, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0248] In addition, if Figure 36 to Figure 40 As shown, the strengthening substrate 40 may be provided so that its end portion is located outside the end portion of the TFT substrate 12 .

[0249] exist Fig.36 In the example shown, the enhancing substrate 40 is bonded to the protective layer 22 via the adhesive layer 48 in the area corresponding to the central portion 14B of the conversion layer 14, and a space corresponding to the inclination in the peripheral portion 14C of the conversion layer 14 is formed in the area corresponding to the peripheral portion 14C of the conversion layer 14, and further in the area outside thereof, between the conversion layer 14 (protective layer 22) and the enhancing substrate 40, and between the TFT substrate 12 and the enhancing substrate 40.

[0250] exist Fig.37In the example shown, the end of the reinforcing substrate 40 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end of the TFT substrate 12, and the other end of the spacer 46 is connected to the end of the reinforcing substrate 40 via the adhesive layer 47. By supporting the end of the reinforcing substrate 40 extending with a space formed between the TFT substrate 12 and the spacer 46, it is possible to suppress the peeling of the reinforcing substrate 40. In addition, the deflection suppression effect of the reinforcing substrate 40 can be applied to the vicinity of the end of the TFT substrate 12.

[0251] exist Fig.38 In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In the embodiment of this example, the connection portion between the flexible cable 112 and the terminal 113 is covered with the filling material 70. In this way, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40 is filled with the filling material 70, thereby Fig.36 Compared with the embodiment shown in the figure, the reinforcing substrate 40 can be prevented from peeling off from the conversion layer 14 (protective layer 22). Furthermore, the conversion layer 14 is fixed to the TFT substrate 12 by both the reinforcing substrate 40 and the filling material 70, so that the conversion layer 14 can be prevented from peeling off from the TFT substrate 12. In addition, the connection portion between the flexible cable 112 and the terminal 113 is covered by the filling material 70, so that the flexible cable 112 can be prevented from peeling off.

[0252] exist Fig.39 In the example shown, the outer peripheral portion of the reinforcing substrate 40 is bent along the inclination of the peripheral portion 14C of the conversion layer 14, and the portion where the adhesive layer 64 and the protective layer 22 cover the TFT substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112 are also covered. The portions of the reinforcing substrate 40 extending onto the TFT substrate 12 and the flexible cable 112 are bonded to the TFT substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the separation of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate equipped with electronic components is connected to the other end of the flexible cable 112, there is a possibility that relatively large deflection occurs in the TFT substrate 12 at the connection portion between the flexible cable 112 and the terminal 113. The connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing substrate 40, so that the deflection of the TFT substrate 12 in this portion can be suppressed.

[0253] exist Fig.40In the example shown, the space formed between the conversion layer 14 (protective layer 22) and the reinforcing substrate 40, and between the TFT substrate 12 and the reinforcing substrate 40, is filled with a filling material 70. In addition, in the region corresponding to the end of the conversion layer 14, another reinforcing substrate 40A is further laminated on the surface of the reinforcing substrate 40 via an adhesive layer 48A. More specifically, the reinforcing substrate 40A is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. The reinforcing substrate 40A can be made of the same material as the reinforcing substrate 40. In the radiation detector 10, the TFT substrate 12 is relatively deflected at the end of the conversion layer 14. By forming a laminated structure composed of the reinforcing substrates 40 and 40A in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0254] As described above, in the manufacturing process of the radiation detector 10, the flexible TFT substrate 12 is attached to the support body 50 such as a glass substrate via the peeling layer 52, and after the conversion layer 14 is stacked on the TFT substrate 12, the support body 50 is peeled off from the TFT substrate 12. At this time, the flexible TFT substrate 12 is bent, and the pixels 30 formed on the TFT substrate 12 may be damaged. Before peeling the support body 50 from the TFT substrate 12, the support body 50 is peeled off in advance as shown in the following example. Figure 20 to Figure 40 By stacking the reinforcing substrate 40 on the conversion layer 14 in the illustrated manner, it is possible to suppress the bending of the TFT substrate 12 that occurs when the support body 50 is peeled off from the TFT substrate 12 , thereby reducing the risk of damaging the pixels 30 .

[0255] In addition, the reinforcing substrate 40 is not limited to a single layer (single layer), and may be composed of multiple layers. Fig.41 In the example shown, the radiation detector 10 shows a mode in which the strengthening substrate 40 is a multilayer film in which three layers of a first strengthening substrate 40B, a second strengthening substrate 40C, and a third strengthening substrate 40D are stacked in order from the side close to the conversion layer 14 .

[0256] When the reinforcing substrate 40 is formed into multiple layers, it is preferred that each layer included in the reinforcing substrate 40 has a different function. Fig.41In the example shown, the first reinforcing substrate 40B and the third reinforcing substrate 40D may be provided as non-conductive antistatic layers, and the second reinforcing substrate 40C may be provided as a conductive layer, so that the reinforcing substrate 40 has an electromagnetic shielding function. In this case, the first reinforcing substrate 40B and the third reinforcing substrate 40D may be, for example, an antistatic film such as a film using an antistatic coating "Colcoat" (trade name: manufactured by Colcoat Co., Ltd.). In addition, as the second reinforcing substrate 40C, for example, a conductive sheet, a conductive mesh sheet such as Cu, etc. may be provided.

[0257] For example, when the reading method of the radiation detector 10 is the ISS method, a control substrate 110, a power supply unit 108, etc. may be provided on the conversion layer 14 side (see Fig.59 ), but in the case where the enhanced substrate 40 has an anti-static function, the electromagnetic noise from the control substrate 110 and the power supply unit 108 can be shielded.

[0258] also, Fig.42 4 is a plan view showing an example of the structure of the reinforcing substrate 40. The reinforcing substrate 40 may have a plurality of through holes 40H on its main surface. The size and pitch of the through holes 40H are determined so that the desired rigidity can be obtained in the reinforcing substrate 40.

[0259] The reinforcing substrate 40 has a plurality of through holes 40H, so that air introduced into the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be discharged from the through holes 40H. This can suppress the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14.

[0260] In the absence of a means for discharging the air introduced to the joint surface between the reinforcing substrate 40 and the conversion layer 3, bubbles may be generated on the above-mentioned joint surface. For example, if the bubbles generated on the above-mentioned joint surface expand due to the heat generated when the radiation imaging device 1 is in operation, the adhesion between the reinforcing substrate 40 and the conversion layer 14 will decrease. As a result, the deflection suppression effect brought by the reinforcing substrate 40 may not be fully exerted. Fig.42 As shown, by utilizing a reinforcing substrate 40 having a plurality of through holes 50A, the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be suppressed as described above, thereby maintaining the close contact between the reinforcing substrate 40 and the conversion layer 14 and maintaining the deflection suppression effect brought by the reinforcing substrate 40.

[0261] Fig.43 40 is a perspective view showing another example of the structure of the reinforcing substrate 40. Fig.43 In the example shown, the reinforcing substrate 40 has a concavo-convex structure on the bonding surface with the conversion layer 14. The concavo-convex structure is as shown in FIG. Fig.43As shown, the reinforcing substrate 40 may also be configured to include a plurality of grooves 63 arranged parallel to each other. Fig.44 As shown in FIG. 1 , the surface having the concavo-convex structure based on the plurality of grooves 63 is bonded to the conversion layer 14 covered by the reflective layer 62. In this way, the reinforcing substrate 40 has a concavo-convex structure on the bonding surface with the conversion layer 14, so that the air introduced into the bonding portion between the reinforcing substrate 40 and the conversion layer 14 can be discharged from the grooves 63. Fig.42 Similarly to the embodiment shown, it is possible to suppress the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14. Thus, the adhesion between the reinforcing substrate 40 and the conversion layer 14 can be maintained, and the deflection suppression effect by the reinforcing substrate 40 can be maintained.

[0262] Fig.45 as well as Fig.46 40 are top views showing another example of the structure of the reinforcing substrate 40. Fig.45 as well as Fig.46 As shown, the strengthening substrate 40 can be divided into a plurality of fragments 54. Fig.45 As shown, it can be divided into a plurality of segments 54 ( Fig.54 5~54 11 ) are arranged in one direction. In addition, the strengthening substrate 40 is as Fig.46 As shown, it can also be divided into multiple segments 54 ( Fig.54 1~544) are arranged vertically and horizontally.

[0263] The larger the area of ​​the strengthening substrate 40 is, the easier it is to generate bubbles on the bonding surface between the strengthening substrate 40 and the conversion layer 14. Fig.45 as well as Fig.46 As shown, by dividing the reinforcing substrate 40 into a plurality of fragments 54, the generation of bubbles at the bonding surface between the reinforcing substrate 40 and the conversion layer 14 can be suppressed. Thus, the adhesion between the reinforcing substrate 40 and the conversion layer 14 can be maintained, and the deflection suppression effect brought by the reinforcing substrate 40 can be maintained.

[0264] Furthermore, the reinforcing member 53 may be provided on the side of the reinforcing substrate 41 opposite to the side in contact with the TFT substrate 12 (the second surface 19B). Figures 47 to 51 Each of them is a cross-sectional view showing an example of the installation form of the reinforcing member 53.

[0265] exist Figures 47 to 51In the example shown, a reinforcing member 53 is laminated via an adhesive layer 51 on the surface of the reinforcing substrate 41 opposite to the surface on the TFT substrate 12 side. The reinforcing member 53 can be made of the same material as the reinforcing substrate 40. When the radiation detector 10 is used as an ISS type, in order to minimize the area of ​​the portion where the reinforcing member 53 and the pixel area 35 overlap, it is preferred that the reinforcing member 53 is provided only on the outer periphery of the TFT substrate 12. That is, the reinforcing member 53 is preferably provided on the outer periphery of the TFT substrate 12. Figures 47 to 51 The illustrated embodiment may be a ring having an opening 61 in a portion corresponding to the pixel region 35. Thus, by forming a stacked structure composed of the reinforcing substrate 41 and the reinforcing member 53 at the periphery of the TFT substrate 12, the rigidity of the periphery of the TFT substrate 12, which is more susceptible to deflection, can be enhanced.

[0266] exist Figures 47 to 49 In the example shown, the reinforcing member 53 is provided in a region spanning the end (outer edge, edge) of the conversion layer 14. In the radiation detector 10, the TFT substrate 12 is relatively deflected at the end of the conversion layer 14. By forming a stacked structure composed of the reinforcing substrate 41 and the reinforcing member 53 in the region corresponding to the end of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 can be promoted.

[0267] When the radiation detector 10 is used as an ISS system, Fig.47 As shown, when a part of the reinforcing member 53 overlaps with the pixel region 35, the image may be affected by the material of the reinforcing member 53. Therefore, when a part of the reinforcing member 53 overlaps with the pixel region 35, it is preferable to use plastic as the material of the reinforcing member 53.

[0268] like Fig.48 as well as Fig.49 As shown, the most preferred embodiment is when the reinforcing member 53 spans the end (outer edge, margin) of the conversion layer 14 and does not overlap the pixel region 35 (i.e., the end of the opening 61 of the reinforcing member 53 is arranged outside the pixel region 35). Fig.48 In the example shown, the position of the end of the opening 61 of the reinforcing member 53 is substantially consistent with the position of the end of the pixel region 35. Fig.49 In the illustrated example, the end of the opening 61 of the reinforcing member 53 is arranged between the end of the pixel region 35 and the end of the conversion layer 14 .

[0269] In addition, the position of the end of the opening 61 of the reinforcing member 53 is as follows: Fig.50 As shown, the position of the end of the conversion layer 14 may be substantially consistent. Fig.51As shown, the reinforcing member 53 may be arranged outside the end of the conversion layer 14. In this case, since the reinforcing member 53 is structured to span the end (outer edge, edge) of the conversion layer 14, the effect of suppressing the deflection of the TFT substrate 12 at the end of the conversion layer 14 may be reduced. However, at the outer peripheral portion of the TFT substrate 12 where the connection portion between the flexible cable 112 and the terminal 113 exists, a stacked structure consisting of the reinforcing substrate 41 and the reinforcing member 53 is formed, so the effect of suppressing the deflection of the TFT substrate 12 at the connection portion between the flexible cable 112 and the terminal 113 is maintained.

[0270] Furthermore, in the radiation detector 10 of each of the above-described exemplary embodiments, the TFT substrate 12 (base material 11 ) and the reinforcing substrate 41 are described as being of the same size, but the TFT substrate 12 and the reinforcing substrate 41 may be of different sizes.

[0271] For example, when the radiation detector 10 is applied to the radiation imaging device 1, the radiation detector 10 may be fixed to a housing 120 (see FIG. 1 ) that accommodates the radiation detector 10. Figure 7 In this case, for example, Fig.52A As shown in the example, the strengthening substrate 41 may be made larger than the TFT substrate 12, and a sheet or the like may be provided, and the radiation detector 10 may be fixed by using a portion of the sheet or the like. For example, a method may be adopted in which a hole is provided in the sheet portion of the strengthening substrate 41, and the strengthening substrate 41 is fixed to the housing 120 (see FIG. 1 ) by using a screw passing through the hole. Figure 7 etc.) fixed.

[0272] The method of making the reinforcing substrate 41 larger than the TFT substrate 12 is not limited to Fig.52A Alternatively, the reinforcing substrate 41 may be formed of a plurality of stacked layers, with one layer being larger than the TFT substrate 12. For example, Fig.52B As shown, the enhancement substrate 41 may also be configured as a two-layer structure having a first layer 41A having the same size as the TFT substrate 12 (substrate 11) and a second layer 41B that is larger than the TFT substrate 12. The first layer 41A and the second layer 41B are adhered by double-sided tape, an adhesive layer, etc. (not shown in the figure). As the first layer 41A, for example, it is preferably formed of the same material as the above-mentioned enhancement substrate 41 and has the same properties as the enhancement substrate 41. In addition, the second layer 41B is adhered to the second surface 19B of the substrate 11 by double-sided tape, an adhesive layer, etc. (not shown in the figure). As the second layer 41B, for example, Alpet (registered trademark) can be applied. In addition, in the case where the enhancement substrate 41 is composed of a plurality of layers, Fig.52B In contrast to the way shown, Fig.52CAs shown, the first layer 41A may be attached to the second surface 19B of the substrate 11 .

[0273] As described above, when the radiation detector 10 is fixed to the housing 120 (see Figure 7 In the case of bending the sheet part, etc., the sheet part may be fixed in a bent state. The thinner the thickness, the easier it is for the sheet part of the reinforcing substrate 41 to bend, and only the sheet part can be bent without affecting the main body of the radiation detector 10. Therefore, in the case of bending the sheet part, such as Fig.52B as well as Fig.52C As in the example shown, it is preferable that the reinforcing substrate 41 be constituted by a plurality of stacked layers, and a part of the layers be larger than the TFT substrate 12 .

[0274] In addition, if Fig.53 As shown in the example, it can be combined with the above Figure 52A to Figure 52C In contrast, the radiation detector 10 of the embodiment of the present invention has the enhancement substrate 41 smaller than the TFT substrate 12. By locating the end of the TFT substrate 12 outside the end of the enhancement substrate 41, for example, when the radiation detector 10 is housed in the housing 120 (see Figure 7 When assembling by the method of FIG. 1 , etc., it is easy to confirm the position of the end of the TFT substrate 12, so the positioning accuracy can be improved. Fig.53 The embodiment shown is preferred because the same effect can be obtained as long as at least a part of the end portion of the TFT substrate 12 (base material 11 ) is located outside the reinforcing substrate 41 .

[0275] Furthermore, refer to Figures 54 to 60 An example of the radiation imaging device 1 in which the radiation detector 10 is accommodated in the housing 120 will be described. Figures 54 to 60 Each of them is a diagram showing another configuration example of the radiation imaging device 1 .

[0276] exist Fig.54 In the example shown above, Fig.18 The radiation imaging device 1 shown in FIG. 1 is also an example of the radiation imaging device 1 of the ISS method. Fig.55 The example shown is an example of a PSS-based radiation imaging device 1. Fig.54 as well as Fig.55 In the example shown, a structure is illustrated in which the radiation detector 10 , the control substrate 110 , and the power supply unit 108 are arranged side by side in the horizontal direction in the figure.

[0277] In addition, Fig.54 as well as Fig.55In the example shown, a protective layer 117 is further provided between the radiation detector 10 and the inner wall of the imaging surface 120A of the housing 120. In other words, a protective layer 117 is further provided on the imaging surface 120A side on which the radiation R is incident. As the protective layer 117, a moisture-proof film such as an Alpet (registered trademark) sheet, a parylene (registered trademark) film, and an insulating sheet such as polyethylene terephthalate, which is a sheet of aluminum laminated by bonding aluminum foil or the like to an insulating sheet (film), can be used. The protective layer 117 has a moisture-proof function and an anti-static function for the pixel area 35. Therefore, the protective layer 117 preferably covers at least the entire surface of the pixel area 35 on the side on which the radiation R is incident, and preferably covers the entire surface of the TFT substrate 12 on the side on which the radiation R is incident.

[0278] In addition, Fig.54 as well as Fig.55 , the power supply unit 108 and the control substrate 110 are both provided on one side of the radiation detector 10, specifically, on one side of the rectangular pixel region 35, but the positions of the power supply unit 108 and the control substrate 110 are not limited to Fig.54 as well as Fig.55 For example, the power supply unit 108 and the control substrate 110 may be disposed on each of two opposing sides of the pixel region 35 , or may be disposed on each of two adjacent sides.

[0279] In addition, if Fig.54 as well as Fig.55 As in the example shown, when the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side in a direction intersecting the direction in which the TFT substrate 12 and the conversion layer 14 are stacked (stacking direction P), the thickness of the shell 120 can be different between the portion of the shell 120 where the power supply unit 108 and the control substrate 110 are respectively arranged and the portion of the shell 120 where the radiation detector 10 is arranged.

[0280] As mentioned above, Fig.55 As shown in the example, the power supply unit 108 and the control substrate 110 are each thicker than the radiation detector 10 in many cases. Fig.56As in the example shown, the thickness of the portion of the housing 120 where the radiation detector 10 is provided may be thinner than the thickness of the portion of the housing 120 where the power supply unit 108 and the control board 110 are provided. In addition, in this case, when the portion of the housing 120 where the power supply unit 108 and the control board 110 are provided and the portion of the housing 120 where the radiation detector 10 is provided have different thicknesses, if a height difference is generated at the boundary between the two portions, there is a possibility that the subject who contacts the boundary 120B may feel uncomfortable, and therefore, the boundary 120B is preferably provided in an inclined state.

[0281] This makes it possible to configure an extremely thin portable electronic cassette that corresponds to the thickness of the radiation detector 10 .

[0282] In this case, for example, the material of the housing 120 may be different between the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided. Furthermore, for example, the portion of the housing 120 where the power supply unit 108 and the control substrate 110 are provided, and the portion of the housing 120 where the radiation detector 10 is provided may be configured as separate bodies.

[0283] As described above, the housing 120 preferably has a low absorption rate of radiation R, especially X-rays, and is highly rigid, and is preferably made of a material with a sufficiently high elastic modulus, but may also be made of a material having a high elastic modulus. Fig.57 As shown in the example, part 120C corresponding to the imaging surface 120A of the shell 120 has a low absorption rate of radiation R, is highly rigid, and is made of a material with a sufficiently high elastic modulus, while other parts are made of a material different from that of part 120C, for example, a material with a lower elastic modulus than that of part 120C.

[0284] In addition, if Fig.58 As shown in the example, the radiation detector 10 and the inner wall surface of the housing 120 may be in contact. In this case, the radiation detector 10 and the inner wall surface of the housing 120 may be bonded via an adhesive layer, or may simply be in contact without an adhesive layer. In this way, the radiation detector 10 and the inner wall surface of the housing 120 are in contact, so that the rigidity of the radiation detector 10 can be further ensured.

[0285] In addition, Fig.59 In the example shown above, Fig.19 The radiation imaging device 1 shown in FIG. 1 is also an example of the radiation imaging device 1 of the ISS method. Fig.60 The example shown is an example of a PSS-based radiation imaging device 1. Fig.59 as well as Fig.60In the example shown, the TFT substrate 12, the control substrate 110, and the power supply unit 108 are arranged with the sheet 116 and the base 118 interposed therebetween. According to this structure, the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side in the horizontal direction in the figure (see Figure 54 to Figure 58 ) compared to the conventional embodiment, the size of the radiation imaging device 1 when viewed from above can be reduced.

[0286] The disclosures of Japanese Applications No. 2018-051690, 2018-219696, 2019-022148, 2018-119356, 2018-219699, and 2019-022126 are incorporated herein by reference in their entirety.

[0287] All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each individual document, patent application, or technical standard was specifically and individually indicated to be incorporated by reference.

Claims

1. A radiation detector comprising: A substrate having a particle layer and a plurality of pixels for accumulating charges generated by light converted from radiation formed in a pixel region on a surface of the substrate having the particle layer opposite to the surface having the particle layer, wherein the substrate is flexible and made of resin, and the particle layer includes inorganic particles having an average particle diameter of not less than 0.05 μm and not more than 2.5 μm; a conversion layer, provided on the surface of the substrate on which the pixel region is provided, and converting the radiation into light; and a reinforcing substrate provided on at least one of a surface on the substrate side and a surface on the conversion layer side of a stacked body on which the substrate and the conversion layer are stacked, The thermal expansion coefficient of the substrate at 300° C. to 400° C. is less than 20 ppm / K.

2. A radiation detector comprising: A substrate having a particle layer and a plurality of pixels for accumulating charges generated by light converted from radiation formed in a pixel region on a surface of the substrate having the particle layer opposite to the surface having the particle layer, wherein the substrate is flexible and made of resin, and the particle layer includes inorganic particles having an average particle diameter of not less than 0.05 μm and not more than 2.5 μm; a conversion layer, provided on the surface of the substrate on which the pixel region is provided, and converting the radiation into light; and a reinforcing substrate provided on at least one of a surface on the substrate side and a surface on the conversion layer side of a stacked body on which the substrate and the conversion layer are stacked, The substrate satisfies at least one of a heat shrinkage rate in a machine direction (MD) at 400° C. of 0.5% or less and an elastic modulus of 1 GPa or more at 500° C. in a state of having a thickness of 25 μm.

3. The radiation detector according to claim 1 or 2, wherein: The fine particles include an element having an atomic number greater than that of an element constituting the substrate and having an atomic number of 30 or less.

4. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate has a bending elastic modulus of 150 MPa or more and 2500 MPa or less.

5. The radiation detector according to claim 1 or 2, wherein: A ratio of a thermal expansion coefficient of the reinforcing substrate to a thermal expansion coefficient of the conversion layer is greater than or equal to 0.5 and less than or equal to 2.

6. The radiation detector according to claim 1 or 2, wherein: The thermal expansion coefficient of the reinforcing substrate is greater than or equal to 30 ppm / K and less than or equal to 80 ppm / K.

7. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate includes a material having a yield point.

8. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate has higher rigidity than the base material.

9. The radiation detector according to claim 1 or 2, wherein: The thickness of the reinforcing substrate is thicker than that of the base material.

10. The radiation detector according to claim 1 or 2, wherein: The conversion layer covers the pixel region and is provided in a part of the surface of the substrate on which the pixel region is provided. The enhancement substrate is provided in a region larger than a region where the conversion layer is provided.

11. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate is provided on a surface on the substrate side and a surface on the conversion layer side of a stacked body on which the substrate and the conversion layer are stacked. The thickness of the reinforcing substrate provided on the surface on the conversion layer side is thicker than the thickness of the reinforcing substrate provided on the surface on the substrate side.

12. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate is a substrate made of plastic.

13. The radiation detector according to claim 12, wherein: The plastic is at least one of polycarbonate and polyethylene terephthalate.

14. The radiation detector according to claim 12, wherein: The plastic is at least one of styrene, acrylic, polyacetal, and nylon.

15. The radiation detector according to claim 12, wherein: The plastic is at least one of polypropylene, ABS, engineering plastics, polyethylene terephthalate, and polyphenylene ether.

16. The radiation detector according to claim 12, wherein: The plastic is a thermoplastic resin.

17. The radiation detector according to claim 1 or 2, wherein: The method further includes a buffer layer provided between the substrate and the conversion layer to buffer a difference between a thermal expansion coefficient of the conversion layer and a thermal expansion coefficient of the substrate.

18. The radiation detector according to claim 1 or 2, wherein: The pixel has: A sensor portion that generates electric charge corresponding to the dose of the irradiated radiation and accumulates the generated electric charge; and The switch element reads out the charge accumulated in the sensor portion.

19. The radiation detector according to claim 18, wherein: The switching element is a transistor having a gate electrode, The substrate includes a layer formed of an inorganic material between the base material and the gate electrode.

20. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate is provided on the substrate side of the stacked body on which the conversion layer is stacked. A sealing member for sealing a side surface of the conversion layer is further provided between the reinforcing substrate and a surface of the substrate on the conversion layer side.

21. The radiation detector according to claim 1 or 2, wherein: The laminate further includes a portion on the conversion layer side in which an adhesive layer, an adhesive layer, and a protective layer are sequentially laminated, the adhesive layer being a reflective adhesive layer that reflects light converted by the conversion layer, the adhesive layer covering an area including an area from an end of the adhesive layer to a surface of the substrate, and the protective layer covering the adhesive layer and the adhesive layer. The reinforcing substrate is provided on at least one of a surface of the laminate on the substrate side and a surface of the laminate on the protective layer side.

22. The radiation detector according to claim 1 or 2, wherein: The laminate further includes a portion on the conversion layer side where an adhesive layer and a protective layer are sequentially laminated, wherein the adhesive layer is a reflective adhesive layer that reflects light converted by the conversion layer and covers an area including the entire conversion layer and an area to the surface of the substrate, and the protective layer covers the adhesive layer. The reinforcing substrate is provided on at least one of a surface of the laminate on the substrate side and a surface of the laminate on the protective layer side.

23. The radiation detector according to claim 1 or 2, wherein: The conversion layer includes columnar crystals of CsI.

24. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate is provided on a surface of the stacked body on the conversion layer side.

25. The radiation detector according to claim 24, wherein: The reinforcing substrate extends over a range larger than that of the conversion layer.

26. The radiation detector according to claim 24, wherein: The reinforcing substrate extends in regions corresponding to a central portion and a peripheral portion of the conversion layer.

27. The radiation detector according to claim 25 or 26, wherein: The reinforcing substrate is bent so as to follow the inclination of the peripheral portion of the conversion layer.

28. The radiation detector according to claim 25, wherein: A space corresponding to the inclination of the peripheral portion of the conversion layer is formed between the reinforcing substrate and the conversion layer.

29. The radiation detector according to claim 25, wherein: A space formed between the enhancement substrate and the conversion layer is filled with a filling material.

30. The radiation detector according to claim 25, wherein: The end portion of the strengthening substrate is supported by a spacer.

31. The radiation detector according to claim 25, wherein: The reinforcing substrate is bent along the inclination of the peripheral portion of the conversion layer. The end portion of the strengthening substrate is sealed by a sealing member.

32. The radiation detector according to claim 1 or 2, wherein: The reinforcing substrate is provided on a surface of the laminated body on the substrate side.

33. The radiation detector according to claim 32, wherein: A reinforcing member is provided on a side of the reinforcing substrate opposite to a side in contact with the substrate, and the reinforcing member is provided in a region straddling an end of the conversion layer and in a region not overlapping with a pixel region.

34. The radiation detector according to claim 1 or 2, wherein: A reinforcing member is provided on a surface of the substrate opposite to the conversion layer to reinforce the substrate, and the reinforcing member is provided in a region spanning an end of the conversion layer and in a region not overlapping with a pixel region.

35. A radiographic imaging device comprising: The radiation detector according to claim 1 or 2; a control unit that outputs a control signal for reading out the charges accumulated in the plurality of pixels; a driving unit configured to read out charges from the plurality of pixels according to the control signal; and The signal processing unit receives an electrical signal corresponding to the charge read out from the plurality of pixels, generates image data corresponding to the input electrical signal, and outputs the image data to the control unit.

36. The radiation imaging device according to claim 35, wherein: The invention further comprises a casing having an irradiation surface to be irradiated with radiation, and accommodating the radiation detector in a state where the sensor substrate and the conversion layer in the radiation detector face the irradiation surface.

37. A method for manufacturing a radiation detector, comprising: A step of applying an adhesive layer to a reinforcing substrate having a size corresponding to the radiation detector; The step of forming a substrate via a peeling layer on a support, wherein the substrate has a plurality of pixels for accumulating charges generated according to light converted from radiation in a pixel region on a surface of a substrate having a particle layer opposite to a surface having the particle layer, the substrate being flexible and made of resin, and the particle layer containing inorganic particles having an average particle diameter of not less than 0.05 μm and not more than 2.5 μm; A step of forming a conversion layer for converting the radiation into light on the surface of the substrate where the pixel region is provided; a step of connecting wiring for connecting the pixel to a circuit unit on the substrate; A step of attaching the reinforcing substrate to a surface of the conversion layer opposite to a surface facing the substrate; and The step of peeling the substrate to which the wiring is connected and on which the conversion layer and the reinforcing substrate are provided from the support.

Images