Pulse drive circuit of magnetic holding electronic lock and magnetic holding electronic lock

Abstract

The present invention discloses a pulse drive circuit for a magnetic holding electronic lock, which includes: a power supply unit for providing power; a pulse conversion unit, wherein the input end of the pulse conversion unit is connected to the power supply unit, and the output end of the pulse conversion unit is connected to the electronic lock, and is used to convert the power supply voltage into a pulse voltage to control the locking or unlocking of the magnetic holding electronic lock. In an embodiment of the present invention, a voltage is applied to the pulse conversion unit by the power supply unit, and the pulse conversion unit converts the voltage into a pulse to control the locking or unlocking of the electronic lock, which can improve reliability and safety, and is easy to integrate and low in cost. In addition, the present invention also discloses a magnetic holding electronic lock, which includes the pulse drive circuit of the magnetic holding electronic lock.

Description

Technical Field

[0001] The invention relates to the field of electronic equipment, and in particular to a pulse drive circuit of a magnetic holding electronic lock and a magnetic holding electronic lock. Background Art

[0002] The electronic lock of the charging gun of the charging pile is very important for the entire charging process. The charging gun has direct contact with people from the preparation of charging to the end of charging, so the safety of the charging gun is very important, and the electronic lock of the charging gun is used to ensure the safety of charging during the charging process. There are currently two ways to control the electronic lock of the charging gun on the market, one is the magnetic holding electronic lock, and the other is the pulse electronic lock. The advantage of the pulse electronic lock is that it does not require long-term power supply, and its disadvantage is that the electronic lock needs to be manually disconnected mechanically when the power is off, which is inconvenient to use. The advantage of the magnetic holding electronic lock is that the electronic lock is disconnected immediately when the power is off, and its disadvantage is that it requires long-term power supply. Specifically, the magnetic holding electronic lock is a mechanical switch, which, like other switching devices, plays a role in connecting and disconnecting the circuit. The difference is that the switching state of the magnetic holding electronic lock relies on applying positive and negative voltages to both ends of the coil to switch it, and finally the state is maintained by the internal permanent magnet. Secondly, whether the positive voltage or negative voltage is applied during driving, the coil will generate temperature rise when it is powered on for a long time, which will also bring life and reliability problems to the electronic lock itself. Summary of the invention

[0003] The invention provides a pulse driving circuit of a magnetic holding electronic lock, aiming to solve the technical problem of low reliability of the magnetic holding electronic lock in the related art.

[0004] The present invention provides a pulse driving circuit for a magnetic holding electronic lock, which comprises: a power supply unit for providing power; a pulse conversion unit, wherein the input end of the pulse conversion unit is connected to the power supply unit, the output end of the pulse conversion unit is used to be connected to the magnetic holding electronic lock, and the pulse conversion unit is used to convert the power supply voltage into a pulse voltage to control the magnetic holding electronic lock to lock or unlock.

[0005] Furthermore, the pulse conversion unit includes: a switch unit, which is connected to the positive and negative poles of the power supply unit and is used to be connected to the magnetic holding electronic lock to control the locking or unlocking of the magnetic holding electronic lock; a forward pulse conversion unit, which is connected between the positive pole of the power supply unit and the switch unit and is used to feedback the switch unit to cut off the switch unit to form a forward pulse; and a reverse pulse conversion unit, which is connected between the negative pole of the power supply unit and the switch unit and is used to feedback the switch unit to cut off the switch unit to form a reverse pulse.

[0006] Further, the switch unit includes: a second N-channel enhancement type MOS transistor, the forward pulse conversion unit includes: a second resistor, a fourth resistor and a first capacitor, the gate of the second N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the source of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the magnetic holding electronic lock, the fourth resistor is connected between the source and the gate of the second N-channel enhancement type MOS transistor, the second resistor is connected between the positive electrode of the power supply unit and the gate of the second N-channel enhancement type MOS transistor, and the first capacitor is connected in parallel with the second resistor.

[0007] Furthermore, the forward pulse conversion unit also includes: a first rectifying unit and a first clamping unit, the first rectifying unit is connected between the positive electrode of the power supply unit and the second resistor, and the first clamping unit is connected between the source and the gate of the second N-channel enhancement mode MOS tube.

[0008] Further, the first rectifying unit is a first rectifying diode, the first clamping unit is a first clamping diode, the anode of the first rectifying diode is connected to the anode of the power supply unit, the cathode of the first rectifying diode is connected to the second resistor, the anode of the first clamping diode is connected to the source of the second N-channel enhancement mode MOS tube, and the cathode of the first clamping diode is connected to the gate of the second N-channel enhancement mode MOS tube.

[0009] Further, the switch unit includes: a first N-channel enhancement type MOS transistor, the reverse pulse conversion unit includes: a first resistor, a third resistor and a second capacitor, the source of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the gate of the first N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the magnetic holding electronic lock, the first resistor is connected between the source and the gate of the first N-channel enhancement type MOS transistor, the third resistor is connected between the negative electrode of the power supply unit and the gate of the first N-channel enhancement type MOS transistor, and the second capacitor and the third resistor are connected in parallel.

[0010] Furthermore, the reverse pulse conversion unit also includes: a second rectifying unit and a second clamping unit, the second rectifying unit is connected between the negative electrode of the power supply unit and the third resistor, and the second clamping unit is connected between the source and the gate of the first N-channel enhancement mode MOS tube.

[0011] Further, the second rectifying unit is a second rectifying diode, the second clamping unit is a second clamping diode, the anode of the second rectifying diode is connected to the negative electrode of the power supply unit, the cathode of the second rectifying diode is connected to the third resistor, the anode of the second clamping diode is connected to the source of the first N-channel enhancement type MOS tube, and the cathode of the second clamping diode is connected to the gate of the first N-channel enhancement type MOS tube.

[0012] Further, the pulse conversion unit includes: a first N-channel enhancement type MOS transistor, a second N-channel enhancement type MOS transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a first rectifier diode, a second rectifier diode, a first clamping diode, a second clamping diode and a bidirectional transient suppression diode, the source of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the gate of the first N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the magnetic holding electronic lock, the first resistor is connected between the source and the gate of the first N-channel enhancement type MOS transistor, the third resistor is connected between the negative electrode of the power supply unit and the gate of the first N-channel enhancement type MOS transistor, and the second capacitor and the third resistor are connected in parallel; the positive electrode of the second rectifier diode is connected to the negative electrode of the power supply unit, the negative electrode of the second rectifier diode is connected to the third resistor, and the positive electrode of the second clamping diode is connected to the positive electrode of the first N-channel enhancement type MOS transistor. The source of the second N-channel enhancement type MOS transistor is connected, the cathode of the second clamping diode is connected to the gate of the first N-channel enhancement type MOS transistor; the gate of the second N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the source of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the magnetic holding electronic lock, the fourth resistor is connected between the source and the gate of the second N-channel enhancement type MOS transistor, the second resistor is connected between the positive electrode of the power supply unit and the gate of the second N-channel enhancement type MOS transistor, and the first capacitor is connected in parallel with the second resistor; the anode of the first rectifier diode is connected to the positive electrode of the power supply unit, the cathode of the first rectifier diode is connected to the second resistor, the anode of the first clamping diode is connected to the source of the second N-channel enhancement type MOS transistor, and the cathode of the first clamping diode is connected to the gate of the second N-channel enhancement type MOS transistor; the bidirectional transient suppression diode is connected between the positive electrode of the magnetic holding electronic lock and the negative electrode of the magnetic holding electronic lock.

[0013] The present invention also provides a magnetic holding electronic lock, which comprises: a pulse driving circuit of the magnetic holding electronic lock, wherein the pulse driving circuit of the magnetic holding electronic lock is the pulse driving circuit of the magnetic holding electronic lock described above.

[0014] Compared with the prior art, the beneficial effects of the present invention are: the present invention applies voltage to the pulse conversion unit through the power supply unit, and the pulse conversion unit converts the voltage into pulses to control the locking or unlocking of the magnetic holding electronic lock, which can improve reliability and safety, and is easy to integrate and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0016] Figure 1 It is a schematic block diagram of a pulse drive circuit of a magnetic holding electronic lock of the present invention;

[0017] Figure 2 A schematic block diagram of a pulse conversion unit of a pulse drive circuit of a magnetic holding electronic lock of the present invention; and

[0018] Figure 3 The figure is a circuit diagram of a pulse drive circuit of a magnetic holding electronic lock of the present invention. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0021] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0022] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0023] Reference Figure 1-3 , which shows an embodiment of a pulse driving circuit 100 of a magnetic holding electronic lock 30 provided in an embodiment of the present invention. The pulse driving circuit 100 of the magnetic holding electronic lock 30 includes a power supply unit 10 and a pulse conversion unit 20. The power supply unit 10 is used to provide power; the input end of the pulse conversion unit is connected to the power supply unit 10, and the output end of the pulse conversion unit is connected to the electronic lock 30, and is used to convert the power supply voltage into a pulse voltage to control the magnetic holding electronic lock 30 to lock or unlock. When the power supply unit 10 applies a forward voltage to the pulse conversion unit 20, the pulse conversion unit 20 converts the applied forward voltage into a forward pulse and transmits it to the magnetic holding electronic lock 30, driving the magnetic holding electronic lock 30 to complete the locking action; when the power supply unit 10 applies a reverse voltage to the pulse conversion unit 20, the pulse conversion unit 20 converts the applied reverse voltage into a reverse pulse and transmits it to the magnetic holding electronic lock 30, driving the magnetic holding electronic lock 30 to complete the unlocking action. Through the above design, compared with the pulse electronic lock 30, locking and unlocking are more convenient, smaller in size and low in cost; compared with the traditional magnetic holding electronic lock 30, it does not need to be powered on for a long time, the coil will not generate temperature rise, saving power resources, improving reliability, enhancing safety, and is easy to integrate and low in cost.

[0024] In one embodiment, the pulse conversion unit 20 includes: a switch unit 23, the switch unit 23 is connected to the positive and negative poles of the power supply unit 10, the switch unit 23 is connected to the magnetic holding electronic lock 30, and is used to control the magnetic holding electronic lock 30 to lock or unlock; a forward pulse conversion unit 21, the forward pulse conversion unit 21 is connected between the positive pole of the power supply unit 10 and the switch unit 23, and is used to feedback the switch unit 23 to cut off the switch unit 23 to form a forward pulse; a reverse pulse conversion unit 22, the reverse pulse conversion unit 22 is connected between the negative pole of the power supply unit 10 and the switch unit 23, and is used to feedback the switch unit 23 to cut off the switch unit 23 to form a reverse pulse. When the power supply unit 10 applies a forward voltage, the switch unit 23 is turned on, the magnetic holding electronic lock 30 is locked, and the forward pulse conversion unit 21 acts on the switch unit 23 to turn off the switch unit 23, thereby forming a forward pulse, so that the coil will not be energized for a long time, and the forward pulse is only used to drive the electronic lock 30 to complete the locking action when the electronic lock 30 is locked, so that the coil will not generate temperature rise, thereby improving reliability and safety.

[0025] In one embodiment, the switch unit 23 includes: a second N-channel enhancement type MOS transistor Q2, the forward pulse conversion unit 21 includes: a second resistor R2, a fourth resistor R4 and a first capacitor C1, the gate of the second N-channel enhancement type MOS transistor Q2 is connected to the positive electrode of the power supply unit 10, the source of the second N-channel enhancement type MOS transistor Q2 is connected to the negative electrode of the power supply unit 10, the drain of the second N-channel enhancement type MOS transistor Q2 is connected to the negative electrode of the magnetic holding electronic lock 30, the fourth resistor R4 is connected between the source and the gate of the second N-channel enhancement type MOS transistor Q2, the second resistor R2 is connected between the positive electrode of the power supply unit 10 and the gate of the second N-channel enhancement type MOS transistor Q2, and the first capacitor C1 is connected in parallel with the second resistor R2. When the power supply unit 10 applies a forward voltage, since there is no voltage across the first capacitor C1 and the voltage cannot change suddenly, the applied forward voltage is directly applied to the fourth resistor R4, so that the second N-channel enhancement-type MOS transistor Q2 is quickly turned on. As the first capacitor C1 is fully charged, the voltage across the fourth resistor R4 slowly decreases, the bias voltage of the second N-channel enhancement-type MOS transistor Q2 is lower than the turn-on voltage, and the second N-channel enhancement-type MOS transistor Q2 is turned off, thereby forming a forward pulse.

[0026] In one embodiment, the forward pulse conversion unit 21 further includes: a first rectifier unit 21a and a first clamp unit 21b, wherein the first rectifier unit 21a is connected between the positive electrode of the power supply unit 10 and the second resistor R2, and the first clamp unit 21b is connected between the source and the gate of the second N-channel enhancement type MOS transistor Q2. The first rectifier unit 21a is a first rectifier diode D1, and the first clamp unit 21b is a first clamp diode D4, wherein the positive electrode of the first rectifier diode D1 is connected to the positive electrode of the power supply unit 10, the negative electrode of the first rectifier diode D1 is connected to the second resistor R2, the positive electrode of the first clamp diode D4 is connected to the source of the second N-channel enhancement type MOS transistor Q2, and the negative electrode of the first clamp diode D4 is connected to the gate of the second N-channel enhancement type MOS transistor Q2. The first clamp diode D4 plays a clamping role in protecting the second N-channel enhancement type MOS transistor Q2 from excessively high bias voltage.

[0027] In one embodiment, the switch unit 23 includes: a first N-channel enhancement type MOS transistor Q1, and the reverse pulse conversion unit 22 includes: a first resistor R1, a third resistor R3 and a second capacitor C2, the source of the first N-channel enhancement type MOS transistor Q1 is connected to the positive electrode of the power supply unit 10, the gate of the first N-channel enhancement type MOS transistor Q1 is connected to the negative electrode of the power supply unit 10, the drain of the first N-channel enhancement type MOS transistor Q1 is connected to the positive electrode of the magnetic holding electronic lock 30, the first resistor R1 is connected between the source and the gate of the first N-channel enhancement type MOS transistor Q1, the third resistor R3 is connected between the negative electrode of the power supply unit 10 and the gate of the first N-channel enhancement type MOS transistor Q1, and the second capacitor C2 and the third resistor R3 are connected in parallel. When a reverse voltage is applied to the negative electrode of the power supply unit 10, there is no voltage across the second capacitor C2, and the voltage cannot change suddenly. The applied reverse voltage is directly applied to the first resistor R1, so that the first N-channel enhancement-type MOS transistor Q1 is quickly turned on. As the second capacitor C2 is fully charged, the voltage across the first resistor R1 slowly decreases, the bias voltage of the first N-channel enhancement-type MOS transistor Q1 is lower than the turn-on voltage, and the first N-channel enhancement-type MOS transistor Q1 is turned off, thereby forming a reverse pulse.

[0028] In one embodiment, the reverse pulse conversion unit 22 further includes: a second rectifying unit 22a and a second clamping unit 22b, wherein the second rectifying unit 22a is connected between the negative electrode of the power supply unit 10 and the third resistor R3, and the second clamping unit 22b is connected between the source and the gate of the first N-channel enhancement type MOS transistor Q1. The second rectifying unit 22a is a second rectifying diode D3, and the second clamping unit 22b is a second clamping diode D2, wherein the positive electrode of the second rectifying diode D3 is connected to the negative electrode of the power supply unit 10, the negative electrode of the second rectifying diode D3 is connected to the third resistor R3, the positive electrode of the second clamping diode D2 is connected to the source of the first N-channel enhancement type MOS transistor Q1, and the negative electrode of the second clamping diode D2 is connected to the gate of the first N-channel enhancement type MOS transistor Q1. The second clamping diode D2 plays a role in protecting the first N-channel enhancement type MOS transistor Q1 from excessive bias voltage.

[0029] In another embodiment, referring to Figure 3 The pulse conversion unit 20 includes: a first N-channel enhancement mode MOS transistor Q1, a second N-channel enhancement mode MOS transistor Q2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first capacitor C1, a second capacitor C2, a first rectifier diode D1, a second rectifier diode D3, a first clamping diode D4, a second clamping diode D2 and a bidirectional transient suppression diode ZD1, wherein the first N-channel enhancement mode MOS transistor Q1 and the second N-channel enhancement mode MOS transistor Q2 form a dual N-channel enhancement mode MOS transistor U1;

[0030] The source of the first N-channel enhancement type MOS transistor Q1 is connected to the positive electrode of the power supply unit 10, the gate of the first N-channel enhancement type MOS transistor Q1 is connected to the negative electrode of the power supply unit 10, the drain of the first N-channel enhancement type MOS transistor Q1 is connected to the positive electrode of the magnetic holding electronic lock 30, the first resistor R1 is connected between the source and the gate of the first N-channel enhancement type MOS transistor Q1, the third resistor R3 is connected between the negative electrode of the power supply unit 10 and the gate of the first N-channel enhancement type MOS transistor Q1, and the second capacitor C2 and the third resistor R3 are connected in parallel; the positive electrode of the second rectifier diode D3 is connected to the negative electrode of the power supply unit 10, the negative electrode of the second rectifier diode D3 is connected to the third resistor R3, the positive electrode of the second clamping diode D2 is connected to the source of the first N-channel enhancement type MOS transistor Q1, and the negative electrode of the second clamping diode D2 is connected to the gate of the first N-channel enhancement type MOS transistor Q1;

[0031] The gate of the second N-channel enhancement type MOS transistor Q2 is connected to the positive electrode of the power supply unit 10, the source of the second N-channel enhancement type MOS transistor Q2 is connected to the negative electrode of the power supply unit 10, the drain of the second N-channel enhancement type MOS transistor Q2 is connected to the negative electrode of the magnetic holding electronic lock 30, the fourth resistor R4 is connected between the source and the gate of the second N-channel enhancement type MOS transistor Q2, the second resistor R2 is connected between the positive electrode of the power supply unit 10 and the gate of the second N-channel enhancement type MOS transistor Q2, and the first The capacitor C1 is connected in parallel with the second resistor R2; the anode of the first rectifier diode D1 is connected to the anode of the power supply unit 10, the cathode of the first rectifier diode D1 is connected to the second resistor R2, the anode of the first clamping diode D4 is connected to the source of the second N-channel enhancement mode MOS transistor Q2, and the cathode of the first clamping diode D4 is connected to the gate of the second N-channel enhancement mode MOS transistor Q2; the bidirectional transient suppression diode ZD1 is connected between the anode of the magnetic holding electronic lock 30 and the cathode of the magnetic holding electronic lock 30. The bidirectional transient suppression diode ZD1 is used to absorb the peak voltage generated when the coil of the magnetic holding electronic lock 30 is actuated to protect the first N-channel enhancement mode MOS transistor Q1 and the second N-channel enhancement mode MOS transistor Q2.

[0032] Through the above design, when the power supply unit 10 applies a forward voltage, a forward pulse is generated to drive the magnetic holding electronic lock 30 to complete the locking action, and when the power supply unit 10 applies a reverse voltage, a reverse pulse is generated to drive the magnetic holding electronic lock 30 to complete the unlocking action. The problem of temperature rise caused by long-term power supply of the coil is solved, and reliability and safety are improved.

[0033] The working process of this embodiment is described below:

[0034] When the input (+12V-12V) is a positive voltage, the voltage is rectified by D1, and R2, C1, and R4 obtain a bias voltage to the VGS ends of the MOS tube Q2 under U1, and the MOS tube Q2 is turned on. Because there is no voltage at both ends of C1 before power-on, the voltage cannot change suddenly. The input voltage +12V is directly added to R4 to make the MOS tube Q2 turn on quickly. As C1 is filled, the voltage at both ends of R4 slowly decreases. When the bias voltage is lower than the conduction voltage Vth of the MOS tube Q2, the MOS tube Q2 is cut off. D4 plays a role in protecting the MOS tube Q2 from excessive bias voltage. Another path, the input voltage +12V is directly turned on to the positive pole OUT+ of the electronic lock through the diode in the body of the MOS tube Q1 on the upper tube of U1, and OUT- returns to -12V through the lower tube MOS tube Q2 turned on by U1. Finally, the two ends OUT+OUT- of the electronic lock obtain a positive driving voltage of about 200mS, and the electronic lock completes the locking action.

[0035] When the input (+12V-12V) is a negative voltage, the voltage is rectified by D3, and R3, C2, and R1 obtain a bias voltage to the VGS ends of the MOS tube Q1 on U1, and the MOS tube Q1 is turned on. Because there is no voltage at both ends of C2 before power-on, the voltage cannot change suddenly. The input voltage -12V is directly added to R1 to make the MOS tube Q1 turn on quickly. As C2 is filled, the voltage at both ends of R1 slowly decreases. When the bias voltage is lower than the conduction voltage Vth of the MOS tube Q1, the MOS tube Q1 is cut off. D2 plays a role in protecting the MOS tube Q1 from excessive bias voltage. Another path, the input voltage -12V is directly turned on to the electronic lock 30 OUT- through the diode in the body of the MOS tube Q2 under U1, and OUT+ returns to +12V through the upper MOS tube Q1 turned on by U1. Finally, the OUT+ and OUT- at both ends of the electronic lock 30 obtain a reverse pulse drive voltage of about 200mS, and the electronic lock 30 completes the unlocking action.

[0036] The embodiment of the present invention demonstrates a pulse driving circuit 100 of a magnetic holding electronic lock 30, in which a voltage is applied to a pulse conversion unit 20 through a power supply unit 10, and the pulse conversion unit 20 converts the voltage into a pulse to control the locking or unlocking of the electronic lock 30, thereby improving reliability and safety, and facilitating integration at low cost.

[0037] The embodiment of the present invention further provides a magnetic holding electronic lock 30, which includes a pulse driving circuit 100 of the magnetic holding electronic lock 30. The pulse driving circuit 100 of the magnetic holding electronic lock 30 is the pulse driving circuit 100 of the magnetic holding electronic lock 30 in the above embodiment.

[0038] The embodiment of the present invention shows a magnetic holding electronic lock 30, in which a voltage is applied to a pulse conversion unit 20 through a power supply unit 10, and the pulse conversion unit 20 converts the voltage into a pulse to control the electronic lock 30 to lock or unlock, which can improve reliability and safety, and is easy to integrate and low cost.

[0039] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A pulse drive circuit for a magnetically held electronic lock, characterized in that: include: A power supply unit, used for providing power; A pulse conversion unit, wherein the input end of the pulse conversion unit is connected to the power supply unit, the output end of the pulse conversion unit is used to connect to the magnetic holding electronic lock, the pulse conversion unit is used to convert the power supply voltage into a pulse voltage to control the magnetic holding electronic lock to lock or unlock, and the magnetic holding electronic lock has a coil; The pulse conversion unit comprises: A switch unit, the switch unit is connected to the positive pole and the negative pole of the power supply unit, and is used to connect to the magnetic holding electronic lock to control the magnetic holding electronic lock to be locked or unlocked; A forward pulse conversion unit, the forward pulse conversion unit is connected between the positive electrode of the power supply unit and the switch unit, and is used for feedback acting on the switch unit to cut off the switch unit to form a forward pulse; A reverse pulse conversion unit, the reverse pulse conversion unit is connected between the negative electrode of the power supply unit and the switch unit, and is used for feedback acting on the switch unit to cut off the switch unit to form a reverse pulse; A bidirectional transient suppression diode is connected between the positive electrode of the magnetic holding electronic lock and the negative electrode of the magnetic holding electronic lock, and is used to absorb the peak voltage generated when the coil of the magnetic holding electronic lock is in action.

2. The pulse drive circuit of the magnetic holding electronic lock according to claim 1, characterized in that: The switch unit includes: a second N-channel enhancement type MOS transistor, and the forward pulse conversion unit includes: a second resistor, a fourth resistor and a first capacitor, the gate of the second N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the source of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the second N-channel enhancement type MOS transistor is connected to the negative electrode of the magnetic holding electronic lock, the fourth resistor is connected between the source and the gate of the second N-channel enhancement type MOS transistor, the second resistor is connected between the positive electrode of the power supply unit and the gate of the second N-channel enhancement type MOS transistor, and the first capacitor is connected in parallel with the second resistor.

3. The pulse drive circuit of the magnetic holding electronic lock according to claim 2, characterized in that: The forward pulse conversion unit further includes: a first rectifying unit and a first clamping unit, wherein the first rectifying unit is connected between the positive electrode of the power supply unit and the second resistor, and the first clamping unit is connected between the source and the gate of the second N-channel enhancement mode MOS tube.

4. The pulse drive circuit of the magnetic holding electronic lock according to claim 3, characterized in that: The first rectifying unit is a first rectifying diode, the first clamping unit is a first clamping diode, the anode of the first rectifying diode is connected to the anode of the power supply unit, the cathode of the first rectifying diode is connected to the second resistor, the anode of the first clamping diode is connected to the source of the second N-channel enhancement mode MOS tube, and the cathode of the first clamping diode is connected to the gate of the second N-channel enhancement mode MOS tube.

5. The pulse drive circuit of the magnetic holding electronic lock according to claim 1, characterized in that: The switch unit includes: a first N-channel enhancement type MOS transistor, and the reverse pulse conversion unit includes: a first resistor, a third resistor and a second capacitor. The source of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the power supply unit, the gate of the first N-channel enhancement type MOS transistor is connected to the negative electrode of the power supply unit, the drain of the first N-channel enhancement type MOS transistor is connected to the positive electrode of the magnetic holding electronic lock, the first resistor is connected between the source and the gate of the first N-channel enhancement type MOS transistor, the third resistor is connected between the negative electrode of the power supply unit and the gate of the first N-channel enhancement type MOS transistor, and the second capacitor and the third resistor are connected in parallel.

6. The pulse drive circuit of the magnetic holding electronic lock according to claim 5, characterized in that: The reverse pulse conversion unit further includes: a second rectifying unit and a second clamping unit, wherein the second rectifying unit is connected between the negative electrode of the power supply unit and the third resistor, and the second clamping unit is connected between the source and the gate of the first N-channel enhancement mode MOS tube.

7. The pulse drive circuit of the magnetic holding electronic lock according to claim 6, characterized in that: The second rectifying unit is a second rectifying diode, the second clamping unit is a second clamping diode, the anode of the second rectifying diode is connected to the cathode of the power supply unit, the cathode of the second rectifying diode is connected to the third resistor, the anode of the second clamping diode is connected to the source of the first N-channel enhancement type MOS tube, and the cathode of the second clamping diode is connected to the gate of the first N-channel enhancement type MOS tube.

8. The pulse drive circuit of the magnetic holding electronic lock according to claim 1, characterized in that: The pulse conversion unit includes: a first N-channel enhancement mode MOS transistor, a second N-channel enhancement mode MOS transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a first rectifier diode, a second rectifier diode, a first clamping diode, and a second clamping diode. The source of the first N-channel enhancement mode MOS transistor is connected to the positive electrode of the power supply unit, the gate of the first N-channel enhancement mode MOS transistor is connected to the negative electrode of the power supply unit, the drain of the first N-channel enhancement mode MOS transistor is connected to the positive electrode of the magnetic holding electronic lock, the first resistor is connected between the source and the gate of the first N-channel enhancement mode MOS transistor, the third resistor is connected between the negative electrode of the power supply unit and the gate of the first N-channel enhancement mode MOS transistor, and the second capacitor and the third resistor are connected in parallel; The anode of the second rectifier diode is connected to the cathode of the power supply unit, the cathode of the second rectifier diode is connected to the third resistor, the anode of the second clamping diode is connected to the source of the first N-channel enhancement mode MOS transistor, and the cathode of the second clamping diode is connected to the gate of the first N-channel enhancement mode MOS transistor; The gate of the second N-channel enhancement mode MOS transistor is connected to the positive electrode of the power supply unit, the source of the second N-channel enhancement mode MOS transistor is connected to the negative electrode of the power supply unit, the drain of the second N-channel enhancement mode MOS transistor is connected to the negative electrode of the magnetic holding electronic lock, the fourth resistor is connected between the source and the gate of the second N-channel enhancement mode MOS transistor, the second resistor is connected between the positive electrode of the power supply unit and the gate of the second N-channel enhancement mode MOS transistor, and the first capacitor is connected in parallel with the second resistor; The anode of the first rectifier diode is connected to the anode of the power supply unit, the cathode of the first rectifier diode is connected to the second resistor, the anode of the first clamping diode is connected to the source of the second N-channel enhancement mode MOS transistor, and the cathode of the first clamping diode is connected to the gate of the second N-channel enhancement mode MOS transistor.

9. A magnetic holding electronic lock, characterized in that: include: A pulse drive circuit for a magnetically latching electronic lock, wherein the pulse drive circuit for a magnetically latching electronic lock is the pulse drive circuit for a magnetically latching electronic lock according to any one of claims 1 to 8.

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