Furnace equipment

Abstract

The present invention provides a furnace body equipment, including: a heating device, including a furnace body, a heating element and an exhaust device, the furnace body is provided with a first inner chamber and a second inner chamber connected to each other, the first inner chamber is suitable for being connected to a process chamber, the heating element is arranged in the second inner chamber, the exhaust device is arranged on the furnace body, and is used to draw the gas in the second inner chamber into the first inner chamber; a conveying device, at least partially arranged in the process chamber, the conveying device includes a transmission element and a carrier, the carrier is arranged on the transmission element, and the transmission element is used to drive the carrier to move relative to the process chamber. In the furnace body equipment provided by the present invention, the gas is preheated in the second inner chamber, so that the gas temperature is uniform and constant. In this way, after the gas enters the process chamber, the temperature in the process chamber is uniform and constant, thereby improving the drying and curing effect and the yield rate of silicon wafers, and avoiding the phenomenon of uneven temperature in the furnace chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic cells, and more specifically, to a furnace device. Background Art

[0002] When preparing HIT (Heterojunction with intrinsic Thinlayer) solar photovoltaic cells, the conductive paste needs to be dried and cured after printing on the surface of the silicon wafer. The traditional heating device is to install an infrared heater in the furnace cavity (process cavity) and then blow cold air into the furnace cavity. During the drying and curing process, the cold air is directly blown into the furnace cavity, causing the temperature in the furnace cavity to fluctuate and become uneven. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art.

[0004] Therefore, an object of the present invention is to provide a furnace device.

[0005] To achieve the above-mentioned purpose, the technical solution of the present invention provides a furnace body equipment, including: a heating device, including a furnace body, a heating element and an exhaust device, the furnace body is provided with a first inner chamber and a second inner chamber connected to each other, the first inner chamber is suitable for being connected to a process chamber, the heating element is arranged in the second inner chamber, the exhaust device is arranged on the furnace body, and is used to draw the gas in the second inner chamber into the first inner chamber; a conveying device, at least partially arranged in the process chamber, the conveying device includes a transmission member and a carrier, the carrier is used to carry silicon wafers and is arranged on the transmission member, and the transmission member is used to drive the carrier to move relative to the process chamber.

[0006] In the furnace equipment provided by the above technical solution of the present invention, the heating element is located in the second inner chamber, and the gas is preheated in the second inner chamber. The exhaust device extracts the preheated gas in the second inner chamber to the first inner chamber, and the hot air is further mixed evenly in the first inner chamber. The first inner chamber is connected to the process chamber, so that the preheated gas enters the process chamber to heat the silicon wafer passing through the process chamber.

[0007] Since the gas is preheated in the second inner chamber, the gas temperature is uniform and constant. After the gas enters the process chamber, the temperature in the process chamber is uniform and constant, which improves the drying and curing effect and yield rate of the silicon wafer and avoids uneven temperature in the furnace chamber.

[0008] The silicon wafer is placed on a carrier, which is connected to a transmission member, so that the silicon wafer moves with the transmission member to achieve transmission of the silicon wafer. Driven by the transmission member, the carrier and the silicon wafer enter the process chamber and move relative to the process chamber to achieve drying and curing of the silicon wafer.

[0009] In addition, the furnace equipment provided by the above technical solution of the present invention also has the following additional technical features:

[0010] In the above technical solution, there are two furnace bodies, namely a first furnace body and a second furnace body arranged opposite to each other, the first furnace body and the second furnace body surround the process cavity, the second inner chamber of the first furnace body is provided with a cold air inlet, and the second inner chamber of the second furnace body is provided with a compressed air inlet.

[0011] The cold air inlet is connected to a cold air inlet pipe, and the compressed air inlet is connected to a compressed air inlet pipe. Cold air enters the second inner chamber of the first furnace body through the cold air inlet pipe, and is preheated into hot air by the heating element in the second inner chamber. Compressed air enters the second inner chamber of the second furnace body through the compressed air inlet pipe, and is heated into hot air by the heating element in the second inner chamber.

[0012] Cold air inlet and compressed air inlet are set. The compressed air entering through the compressed air inlet can replenish fresh air in the process chamber, ensure the cleanliness of the gas in the heating process chamber, ensure the quality of the air blown out of the first inner chamber, meet the silicon wafer production, and improve the drying and curing effect and efficiency.

[0013] Furthermore, the first furnace body and the second furnace body are arranged up and down, for example, the first furnace body is located above the second furnace body.

[0014] Furthermore, the heating device includes multiple heating zones, which are spliced ​​in sequence, each heating zone includes a first furnace body and a second furnace body, and the second inner chamber of the second furnace body of each heating zone is provided with a compressed air inlet, and the compressed air of each second inner chamber is regulated separately.

[0015] In any of the above technical solutions, a lifting device is provided on the furnace body to drive the first furnace body to move up and down relative to the second furnace body, wherein the lifting device includes an electric rod or a hydraulic cylinder or a pneumatic cylinder or an electromagnetic push rod.

[0016] The first furnace body is driven to move up and down relative to the second furnace body by the lifting device. When the lifting device drives the first furnace body to move downward relative to the second furnace body, the first furnace body and the second furnace body can be assembled to form a process chamber; when the first furnace body moves upward relative to the second furnace body, the first furnace body and the second furnace body are separated, and the first furnace body is raised, so that it is convenient to maintain the equipment.

[0017] The first furnace body can be driven to move up and down relative to the second furnace body by an electric rod, a hydraulic cylinder, a gas cylinder or an electromagnetic push rod, and at this time, the lifting device has a simple structure and low cost.

[0018] Furthermore, the number of the lifting devices is multiple, for example, the lifting devices are electric rods, and the number of the electric rods is four.

[0019] In any of the above technical solutions, the first furnace body is provided with a guide portion, and the second furnace body is provided with a guide matching portion, and the guide portion matches with the guide matching portion to guide the first furnace body to move up and down relative to the second furnace body.

[0020] The guide part and the guide matching part cooperate to guide the lifting action (up and down movement) of the first furnace body relative to the second furnace body, realize the up and down reciprocating movement of the first furnace body relative to the second furnace body, and prevent the first furnace body from deviating during the movement relative to the second furnace body.

[0021] In any of the above technical solutions, the guide portion includes a guide rod provided on the first furnace body, the guide matching portion includes a guide groove provided on the second furnace body, the guide rod is located in the guide groove and moves up and down relative to the guide groove; or, the guide portion includes a guide groove provided on the first furnace body, the guide matching portion includes a guide rod provided on the second furnace body, the guide rod is located in the guide groove and moves up and down relative to the guide groove.

[0022] When the first furnace body moves up and down relative to the second furnace body, the guide rod is located in the guide groove and moves up and down relative to the guide groove to guide the lifting action of the first furnace body relative to the second furnace body.

[0023] Furthermore, guide grooves and guide rods are arranged on the outer surface of the furnace body, and the number of guide grooves is multiple, and the number of guide rods is equal to the number of guide grooves and corresponds one to one. For example, the guide rods and guide grooves are arranged on both side surfaces of the furnace body, and the guide rods are guide rods arranged along the up and down directions. The guide groove includes a first protrusion and a second protrusion, and the first protrusion and the second protrusion are arranged opposite to each other and define the guide groove.

[0024] In any of the above technical solutions, the furnace body equipment includes: a flow equalizer plate, which constitutes at least part of the side wall of the first inner chamber, and a first through hole and a second through hole are provided on the flow equalizer plate, the first through hole corresponds to the first inner chamber, and the first inner chamber is connected to the process chamber through the first through hole, and the second through hole corresponds to the second inner chamber, and the second inner chamber is connected to the process chamber through the second through hole; wherein, the number of the first through holes is multiple, and along the direction in which the gas flows from the first inner chamber to the process chamber, the cross-sectional area of ​​the first through holes decreases, and the opening area of ​​a single first through hole is smaller than the opening area of ​​a single second through hole.

[0025] The gas in the first inner chamber flows into the process chamber through the first through hole under the action of the exhaust device, thereby achieving communication between the first inner chamber and the process chamber.

[0026] Furthermore, there are multiple first through holes, and the multiple first through holes are evenly distributed on the flow plate, so that the airflow in the first inner chamber can enter all parts of the process chamber, further improving the uniformity of the temperature in the process chamber.

[0027] Further, along the direction in which the gas flows from the first inner chamber to the process chamber, the cross-sectional area of ​​the first through hole decreases.

[0028] The first through hole has a larger aperture near the first inner chamber and a smaller aperture near the process chamber. The hot air heated by the heating element flows from the large aperture side to the small aperture side, which has the effect of evenly dispersing the hot air and reducing the flow resistance of the hot air.

[0029] Furthermore, along the direction in which the gas flows from the first inner chamber to the process chamber, the cross-sectional area of ​​the first through hole gradually decreases. For example, the first through hole is a circular hole, the first through hole is Y-shaped, the aperture of the first through hole facing the first inner chamber is large, and the aperture gradually decreases with depth, and after being reduced to a set value, it does not change until it completely penetrates the flow plate. It can be understood that the first through hole can be any shape other than a circle, such as a rectangle, an ellipse, etc.

[0030] The gas (mainly hot air) in the process chamber flows back to the second inner chamber through the second through hole to realize the circulation of hot air, thereby realizing the use of hot air circulation heating, reducing heat loss, and ensuring a constant temperature in the furnace body.

[0031] Furthermore, the second inner chamber is located at the periphery of the first inner chamber, and the second inner chamber is surrounded by the surrounding wall of the first inner chamber and the inner side wall of the furnace body, and the second through hole is located at the periphery of the first through hole.

[0032] Furthermore, there are multiple second through holes, and the multiple second through holes are arranged at the edge of the flow equalizer plate and are evenly arranged. For example, the flow equalizer plate is rectangular, and the multiple second through holes are evenly distributed along the length direction or width direction of the flow equalizer plate.

[0033] Furthermore, the opening area of ​​a single second through hole is larger than the opening area of ​​a single first through hole, thereby reducing the number of second through holes and reducing the manufacturing cost of the flow plate. For example, the number of second through holes is smaller than the number of first through holes, and the second through holes are rectangular, circular or any other shape.

[0034] Furthermore, the heating device comprises: an adjusting device, which is arranged at the second through hole and is used to adjust the opening size of the second through hole.

[0035] The regulating device is used to adjust the opening size of the second through hole to control the amount of hot air flowing back from the process chamber to the second inner chamber, so as to circulate the hot air and further control the temperature inside the furnace to be constant.

[0036] In any of the above technical solutions, the furnace body equipment includes: a waste discharge device, which includes a waste discharge pipe, a waste discharge box, a connecting port and a fire damper, the waste discharge pipe is connected to at least one of the first inner chambers, the waste discharge box is connected between the waste discharge pipe and the connecting port, and there is a gap between the connecting port and the waste discharge box that is connected to the outside world, the fire damper is connected to one end of the connecting port away from the waste discharge box, and the fire damper is used to open or close the connecting port; wherein, along the flow direction of the gas in the connecting port, the flow area of ​​the connecting port decreases.

[0037] The exhaust pipe is connected to and communicated with the first inner chamber. A portion of the hot air in the first inner chamber enters the exhaust pipe, and the hot air in the exhaust pipe enters the exhaust box and is discharged to the outside through the exhaust box, thereby discharging a portion of the hot air in the first inner chamber out of the furnace body to ensure the quality of the air in the process chamber.

[0038] Furthermore, the heating device includes a plurality of heating zones, which are sequentially spliced, and the first inner chamber of the first furnace body of each heating zone is connected and communicated with a waste discharge pipe, and the waste discharge pipes are gathered and communicated with a waste discharge box.

[0039] Under the action of driving force, gas flows from the waste discharge pipe into the waste discharge box, and then flows from the waste discharge box into the connecting port. There is a gap connected to the outside world at the connection between the waste discharge box and the connecting port. In this way, when the driving force is too large, outside air can enter the connecting port from the gap, avoiding excessive gas in the first inner chamber flowing out to the connecting port and causing insufficient gas in the process chamber.

[0040] Along the flow direction of the gas in the connecting port, the flow area of ​​the connecting port is reduced, which has the effect of making the gas flow through the connecting port evenly and smoothly and reducing the flow resistance of the gas in the connecting port.

[0041] The gas flows through the exhaust pipe, the exhaust box, the connection port and the fire damper in sequence. When the temperature of the gas in the second inner chamber or the process chamber is too high and exceeds the preset temperature value, the fire damper is closed to isolate the heat source and avoid damage to some parts of the high-temperature gas equipment. When the temperature of the gas in the second inner chamber or the process chamber is less than or equal to the preset temperature value, the fire damper is opened to allow the gas to flow through the fire damper.

[0042] In any of the above technical solutions, the waste discharge device is arranged on the first furnace body, and the waste discharge pipe is connected to the first inner chamber of the first furnace body.

[0043] The compressed air inlet is arranged on the second furnace body, and the waste discharge device is arranged on the first furnace body, so as to avoid interference between the compressed air inlet and the waste discharge device and facilitate the arrangement of the compressed air inlet and the waste discharge device.

[0044] Furthermore, the first furnace body is located above the second furnace body, and the waste discharge device is located above the compressed air inlet.

[0045] In any of the above technical solutions, the carrier includes a support plate and a positioning member and a fixing member arranged on the support plate, the positioning member is used to support the bottom of the silicon wafer, the fixing member and the positioning member are arranged on the same side of the support plate, and the fixing member is used to limit the side edge of the silicon wafer and enable the silicon wafer to be transmitted sideways in the carrier.

[0046] The fixing parts and the positioning parts are arranged on the same side of the support plate, so that the carrier can transport the silicon wafer sideways, meet the transportation requirements, and effectively improve the efficiency of drying and curing, so that the silicon wafer can be transported to the furnace body, and the front and back sides of the silicon wafer can be heated, dried and cured, shortening the process time, and improving the drying and curing effect and the yield rate.

[0047] In any of the above technical solutions, the fixing member includes a first connecting rod and a second connecting rod arranged opposite to each other, the first connecting rod and the second connecting rod are arranged on the support plate, and the fixing member also includes an ear support portion arranged between the first connecting rod and the second connecting rod, the ear support portion is located on the side of the first connecting rod and the second connecting rod away from the positioning member and defines an opening groove whose opening is toward the positioning member, and the ear support portion is used to limit the side edge of the silicon wafer.

[0048] The fixing piece stands up at the end of the supporting plate, and an ear support portion is provided at the end of the fixing piece away from the supporting plate. The ear support portion surrounds the corresponding side edge of the silicon wafer. The ear support portion contacts the side edge of the silicon wafer to avoid contacting the middle of the silicon wafer, thereby effectively protecting the printing on the silicon wafer and improving the product yield and photoelectric efficiency.

[0049] The fixing part is constructed by bending a rod body, and the fixing part has a first connecting rod and a second connecting rod spaced front and back, and the gap between the first connecting rod and the second connecting rod is adapted to the side-standing placement of the silicon wafer, and the first connecting rod and the second connecting rod are connected together by an ear support part at one end away from the support plate. The structure is simple and easy to manufacture. Furthermore, the ear support part is V-shaped side wing shape, which meets the width size of the silicon wafer, and ensures that the ear support part surrounds the corresponding side edge of the silicon wafer and properly supports it, so as to realize the side-standing transportation of the silicon wafer and meet the transmission requirements.

[0050] Furthermore, the support plate and the fixing member are combined into a concave shape, the support plate is arranged horizontally across the conveying direction of the silicon wafer, the upper side surface of the support plate and the fixing member are surrounded to meet the side-standing placement of the silicon wafer, the fixing member contacts the edge of the silicon wafer and avoids contacting the middle of the silicon wafer, thereby effectively protecting the printing on the silicon wafer.

[0051] After the first connecting rod and the second connecting rod extend outwardly along the axial direction (length direction) of the support plate to both ends, a V-shaped ear support portion is formed with a V-shaped groove for placing the silicon wafer, thereby reducing the possibility of scratching the battery cell (silicon wafer).

[0052] Furthermore, there are multiple fixing members, for example, there are two fixing members, and the two fixing members are respectively located at two ends of the support plate in the length direction.

[0053] In any of the above technical solutions, the transmission member includes a double-row chain, a double-row sprocket and a transmission shaft, the double-row sprocket is meshed with the double-row chain, the transmission shaft passes through the double-row sprocket and is used to drive the double-row sprocket to rotate; wherein, the number of the transmission shafts is multiple, at least one of which is a driving shaft to form a transmission cycle, and each of the transmission shafts is sequentially provided with multiple double-row sprockets, and the number of the double-row chains is equal to and corresponds one to one to the number of the double-row sprockets provided on one of the transmission shafts.

[0054] The carrier is connected to the middle chain plate, so that it moves with the chain to realize the transmission of silicon wafers. The use of double-row chain transmission can improve the stability and accuracy of transmission.

[0055] The double-row chain includes an outer link plate, a pin shaft, a middle link plate and an inner link plate. The two outer link plates are connected by the pin shaft to form an outer chain link. The middle chain plate is installed on the pin shaft between the two outer link plates. An inner chain link is arranged between the middle chain plate and the outer link plate, wherein the inner chain link includes the inner link plate.

[0056] The double-row sprocket comprises two sprockets arranged opposite to each other, and further, the two sprockets are arranged symmetrically. One sprocket in the double-row sprocket is meshed with one chain in the double-row chain, and the other sprocket in the double-row sprocket is meshed with the other chain in the double-row chain to drive the double-row chain to move smoothly.

[0057] In any of the above technical solutions, there are multiple transmission shafts, at least one of which is a driving shaft to form a transmission cycle, and each of the transmission shafts is sequentially provided with multiple double-row sprockets, and the number of double-row chains is equal to and corresponds one to one to the number of double-row sprockets provided on one of the transmission shafts.

[0058] At least one of the multiple transmission shafts is a driving shaft, and the rest are driven shafts. The driving shaft provides rotational power for the double-row sprocket (driving sprocket) connected to it, and the driving sprocket meshes with the chain to drive the chain to rotate. The double-row sprocket (driven sprocket) connected to the driven shaft rotates freely without interference under the drive of the driving shaft, forming a circulating transmission circle.

[0059] A plurality of double-row sprockets are sequentially arranged on each transmission shaft, and chains are respectively meshed on the double-row sprockets on the transmission shaft, thereby increasing the number of carriers conveyed per unit time and improving the conveying efficiency of silicon wafers.

[0060] Additional aspects and advantages of the present invention will become apparent from the following description or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0062] Figure 1 is a structural schematic diagram of a furnace device according to an embodiment of the present invention;

[0063] Figure 2 is a structural schematic diagram of a furnace device according to another embodiment of the present invention;

[0064] Figure 3 is a partial structural schematic diagram of a furnace device according to an embodiment of the present invention;

[0065] Figure 4 yes Figure 3 A schematic diagram of the enlarged structure of the middle part A;

[0066] Figure 5 is a schematic structural diagram of a heating device according to an embodiment of the present invention;

[0067] Figure 6 It is a schematic structural diagram of a conveying device according to an embodiment of the present invention.

[0068] in, Figures 1 to 6 The corresponding relationship between the reference numerals and the component names is as follows:

[0069] 1 furnace body, 11 first furnace body, 12 second furnace body, 13 first inner chamber, 14 second inner chamber, 141 cold air inlet, 142 compressed air inlet, 15 process chamber, 151 reflow hole, 16 exhaust device, 161 wind wheel, 162 blower, 17 uniform flow plate, 171 first through hole, 172 second through hole, 19 waste pipe, 20 waste box, 21 heating element, 22 heating zone, 23 connection port, 24 fire damper, 25 double-row chain, 26 double-row sprocket, 27 transmission shaft, 271 driving shaft, 272 driven shaft, 28 carrier, 29 silicon wafer, 30 electrical control, 31 door panel, 40 heating device, 50 waste discharge device, 60 conveying device, 701 guide rod, 702 guide groove. DETAILED DESCRIPTION

[0070] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0071] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0072] Refer to the following drawings Figures 1 to 6 The furnace equipment according to some embodiments of the present invention is described. The furnace equipment may be, but is not limited to, a drying furnace, a curing furnace, and a drying and curing furnace.

[0073] like Figure 1 As shown, a furnace device provided according to some embodiments of the present invention includes a heating device 40 and a conveying device 60.

[0074] Among them, the heating device 40 includes a furnace body 1, a heating element 21 and an exhaust device 16. The furnace body 1 is provided with a first inner chamber 13 and a second inner chamber 14 that are connected to each other. The first inner chamber 13 is suitable for being connected to the process chamber 15. The heating element 21 is arranged in the second inner chamber 14. The exhaust device 16 is arranged on the furnace body 1, and is used to draw the gas in the second inner chamber 14 into the first inner chamber 13.

[0075] The conveying device 60 is at least partially disposed in the process chamber 15 . The conveying device 60 includes a transmission member and a carrier 28 . The carrier 28 is disposed on the transmission member. The transmission member is used to drive the carrier 28 to move relative to the process chamber 15 .

[0076] In the heating device provided by the above embodiment of the present invention, the heating element 21 is located in the second inner chamber 14, and the gas is preheated in the second inner chamber 14. The exhaust device 16 extracts the preheated gas in the second inner chamber 14 to the first inner chamber 13, and the hot air is further mixed evenly in the first inner chamber 13. The first inner chamber 13 is connected to the process chamber 15, so that the preheated gas enters the process chamber 15 to heat the silicon wafer passing through the process chamber 15.

[0077] Since the gas is preheated in the second inner chamber 14, the gas temperature is uniform and constant. After the gas enters the process chamber 15, the temperature inside the process chamber is uniform and constant, thereby improving the drying and curing effect and yield rate of the silicon wafer and avoiding uneven temperature in the furnace chamber.

[0078] The heating element 21 may be a heating tube or a heating wire. Further, each second inner chamber 14 is provided with a plurality of heating tubes or a plurality of heating wires.

[0079] Furthermore, if Figure 4 and Figure 5As shown, the heating device includes: a flow plate 17, which constitutes at least a portion of the side wall of the first inner chamber 13 and is used to separate the first inner chamber 13 from the process chamber 15. The flow plate 17 is provided with a plurality of first through holes 171 corresponding to the first inner chamber 13, and the first inner chamber 13 is connected to the process chamber 15 through the first through holes 171.

[0080] The gas in the first inner chamber 13 flows into the process chamber 15 through the first through hole 171 under the action of the exhaust device 16 , thereby achieving communication between the first inner chamber 13 and the process chamber 15 .

[0081] Furthermore, there are multiple first through holes 171 , and the multiple first through holes 171 are evenly distributed on the flow plate 17 , so that the airflow in the first inner chamber 13 can enter all parts of the process chamber 15 , further improving the temperature uniformity in the process chamber 15 .

[0082] Furthermore, along the direction in which the gas flows from the first inner chamber 13 to the process chamber 15 , the cross-sectional area of ​​the first through hole 171 decreases.

[0083] The first through hole 171 has a larger aperture near the first inner chamber 13, and a smaller aperture near the process chamber 15. The hot air heated by the heating element 21 flows from the large aperture side to the small aperture side, which has the effect of evenly dispersing the hot air and reducing the flow resistance of the hot air.

[0084] Furthermore, the cross-sectional area of ​​the first through hole 171 gradually decreases along the direction in which the gas flows from the first inner chamber 13 to the process chamber 15. For example, the first through hole 171 is a circular hole, the first through hole 171 is Y-shaped, the aperture of the first through hole 171 facing the first inner chamber 13 is large, and the aperture gradually decreases with depth, and after being reduced to a set value, it does not change until it completely penetrates the flow plate 17. It can be understood that the first through hole 171 can be any shape other than a circle, such as a rectangle, an ellipse, etc.

[0085] Furthermore, a second through hole 172 is provided on the flow equalizer plate 17 . The second through hole 172 is provided corresponding to the second inner chamber 14 . The second inner chamber 14 is connected to the process chamber 15 through the second through hole 172 .

[0086] The gas (mainly hot air) in the process chamber 15 flows back to the second inner chamber 14 through the second through hole 172 to realize the circulation of hot air, thereby realizing hot air circulation heating, reducing heat loss, and ensuring a constant temperature in the furnace body 1.

[0087] Furthermore, the second inner chamber 14 is located outside the first inner chamber 13 , and the second inner chamber 14 is surrounded by the surrounding wall of the first inner chamber 13 and the inner side wall of the furnace body 1 , and the second through hole 172 is located outside the first through hole 171 .

[0088] Furthermore, there are multiple second through holes 172 , and the multiple second through holes 172 are arranged at the edge of the flow plate 17 and are evenly arranged. For example, the flow plate 17 is rectangular, and the multiple second through holes 172 are evenly distributed along the length direction or width direction of the flow plate 17 .

[0089] Furthermore, the opening area of ​​a single second through hole 172 is greater than the opening area of ​​a single first through hole 171 , and the second through hole 172 is rectangular, circular or any other shape.

[0090] Furthermore, the heating device includes: an adjusting device, which is arranged at the second through hole 172 and is used to adjust the opening size of the second through hole 172 .

[0091] The regulating device is used to adjust the opening size of the second through hole 172 to control the amount of hot air flowing back from the process chamber 15 to the second inner chamber 14, so as to circulate the hot air and further control the temperature in the furnace body 1 to be constant.

[0092] The adjusting device includes a windshield and a screw or stud penetrating the windshield. The windshield slides relative to the screw or stud to adjust the size of the opening of the second through hole 172. Further, the number of screws is multiple. Alternatively, the adjusting device can be a windshield and a driving device for driving the windshield to move. The driving device can be a motor, a hydraulic cylinder or a cylinder, etc. The driving device is connected to the windshield to drive the windshield to move relative to the second through hole 172 to adjust the size of the opening of the second through hole 172. Further, the windshield is arranged on the flow plate 17 and is rotationally connected or slidably connected to the flow plate 17.

[0093] In a specific embodiment, adjustment devices are provided on both sides of the flow equalizer plate 17 perpendicular to the process chamber 15 to adjust the ventilation size of the second through hole 172 .

[0094] Furthermore, the air exhaust device 16 includes a wind wheel 161 located in the first inner chamber 13 and a blower 162 located outside the first inner chamber 13 .

[0095] The exhaust device 16 includes a wind wheel 161 and a blower 162. Under the action of the wind wheel 161 and the blower 162, the hot air in the second inner chamber 14 flows into the first inner chamber 13 and then into the process chamber 15. The wind wheel 161 and the blower 162 have a simple structure, low cost, and are convenient for splicing multiple heating zones 22. Further, the wind wheel and the blower are arranged in the up and down direction.

[0096] Furthermore, the wind wheel 161 and the blower 162 are arranged perpendicular to the flow equalizer plate 17 and are arranged in the middle of the first inner chamber 13 .

[0097] Furthermore, there are two furnace bodies 1, namely a first furnace body 11 and a second furnace body 12 which are arranged opposite to each other. The first furnace body 11 and the second furnace body 12 enclose a process chamber 15. A cold air inlet 141 is provided on the second inner chamber 14 of the first furnace body 11, and a compressed air inlet 142 is provided on the second inner chamber 14 of the second furnace body 12.

[0098] The cold air inlet 141 is connected to a cold air inlet pipe, and the compressed air inlet 142 is connected to a compressed air inlet pipe. Cold air enters the second inner chamber 14 of the first furnace body 11 through the cold air inlet pipe, and is preheated into hot air by the heating element 21 in the second inner chamber 14. Compressed air enters the second inner chamber 14 of the second furnace body 12 through the compressed air inlet pipe, and is heated into hot air by the heating element 21 in the second inner chamber 14.

[0099] A compressed air inlet 142 is provided, and the compressed air entering through the compressed air inlet 142 can replenish fresh air in the process chamber 15, ensure the cleanliness of the gas in the heating process chamber 15, ensure the quality of the air blown out of the first inner chamber 13, meet the silicon wafer production, and improve the drying and curing effect and efficiency.

[0100] Furthermore, the first furnace body 11 and the second furnace body 12 are arranged up and down. For example, the first furnace body 11 is located above the second furnace body 12 .

[0101] Furthermore, the heating device includes multiple heating zones 22, which are spliced ​​in sequence, each heating zone 22 includes a first furnace body 11 and a second furnace body 12, and the second inner chamber 14 of the second furnace body 12 of each heating zone 22 is provided with a compressed air inlet 142, and the compressed air of each second inner chamber 14 is regulated separately.

[0102] Furthermore, a reflux hole 151 is provided on the side wall of the process chamber 15 , and the reflux hole 151 is used to connect the process chamber 15 with the second inner chamber 14 .

[0103] The hot air in the process chamber 15 flows back to the second inner chamber 14 through the reflow hole 151 and the second through hole 172, so that the hot air is circulated.

[0104] Furthermore, a plurality of reflow holes 151 are provided on the side wall of the process chamber 15 , and the plurality of reflow holes 151 are evenly arranged along the circumference of the side wall of the process chamber 15 to improve the reflow stability of the hot air in the process chamber 15 to reflow to the second inner chamber 14 .

[0105] Furthermore, a temperature detection device is provided in the process chamber 15 for detecting the temperature in the process chamber 15 .

[0106] The temperature in the process chamber 15 is detected by a temperature detection device, and the temperature detection device sends the detected temperature information to the temperature controller. The temperature controller controls the process temperature in the process chamber 15 according to the received temperature information, thereby achieving precise control of the temperature in the process chamber 15.

[0107] The temperature detection device can be a temperature probe or a temperature sensor.

[0108] Furthermore, the heating device includes at least one heating zone 22. When the heating device includes a plurality of heating zones 22, at least one temperature detection device is provided in each heating zone 22 to achieve separate temperature control of each heating zone 22.

[0109] Furthermore, the heating device includes: a waste discharge pipe 19 connected to the first inner chamber 13; and a waste discharge box 20 connected to the waste discharge pipe 19 and connected to the outside.

[0110] The exhaust pipe 19 is connected to and communicated with the first inner chamber 13. A portion of the hot air in the first inner chamber 13 enters the exhaust pipe 19, and the hot air in the exhaust pipe 19 enters the exhaust box 20 and is discharged to the outside through the exhaust box 20, thereby discharging a portion of the hot air in the first inner chamber 13 out of the furnace body 1 to ensure the quality of the air in the process chamber 15.

[0111] Furthermore, the heating device includes a plurality of heating zones 22 , which are spliced ​​in sequence, and the second inner chamber 14 of the first furnace body 11 of each heating zone 22 is connected and communicated with the waste pipe 19 , and the waste pipe 19 is gathered and communicated with the waste box 20 .

[0112] Furthermore, the exhaust pipe is located at the upper end of the furnace body, and the compressed air inlet is located at the lower end of the furnace body.

[0113] Furthermore, a waste discharge box is connected to a plurality of waste discharge pipes which are arranged horizontally.

[0114] like Figures 1 to 5 As shown, the heating device includes a first furnace body 11, a second furnace body 12, a waste pipe 19, and a waste box 20, wherein the first furnace body 11 is located above the second furnace body 12; the first furnace body 11 and the second furnace body 12 are composed of a plurality of heating zones 22 arranged in an array. Each single heating zone 22 includes an air inlet pipe (compressed air inlet pipe) of the furnace body 1, a blower 162, a heating element, a wind wheel 161, and a flow equalizer 17; the solar cell is dried and cured at the entrance of the heating device (arranged at the door panel 31) through the conveying device through the process chamber 15, and then moves to the outlet of the heating device.

[0115] Cold air enters the first furnace body 11 through the cold air inlet 141 , and compressed air enters the second inner chamber 14 through the compressed air inlet 142 on the second furnace body 12 .

[0116] The compressed air of each heating zone 22 is regulated separately; a plurality of heating wires are installed in the second inner chamber 14 to heat the air; after the air is heated, the blower 162 and the wind wheel 161 are used to extract the hot air in the second inner chamber 14 and press it into the first inner chamber 13; the central area of ​​the flow equalizer 17 is provided with evenly distributed Y-shaped holes (first through holes 171), and the four sides are provided with a plurality of long holes (second through holes 172); the pressurized hot air in the second inner chamber 14 is evenly passed into the process chamber 15 through the Y-shaped hole in the center of the flow equalizer 17, and is used to dry and solidify the battery cells in the process chamber 15.

[0117] A plurality of temperature detection devices (temperature sensing probes) are installed in the process chamber 15 , and the temperature values ​​are fed back to the temperature controller for accurately controlling the process temperature in the process chamber 15 .

[0118] The Y-shaped hole is characterized by a large hole diameter on one side, which gradually decreases with depth. After it is reduced to a set value, it will not change until it completely penetrates the flow plate 17. The hot air flows from the large hole side to the small hole side, thereby evenly dispersing the hot air and reducing the flow resistance.

[0119] A plurality of reflow holes 151 are provided on the two side walls of the process chamber 15. The hot air in the process chamber 15 mainly passes through the reflow holes 151 and then returns to the second inner chamber 14 through the long holes around the flow equalizer plate 17. Adjustment devices are provided on both sides of the flow equalizer plate 17 perpendicular to the process chamber 15 to adjust the ventilation size of the long holes and assist the reflow holes 151 on the two side walls of the furnace body 1 to draw hot air back to the second inner chamber 14 and recycle the hot air. The exhaust pipe 19 is connected to the second inner chamber 14 to discharge part of the hot air out of the furnace to ensure the air quality in the furnace chamber.

[0120] Furthermore, a lifting device is provided on the furnace body 1 to drive the first furnace body 11 to move up and down relative to the second furnace body 12 .

[0121] The first furnace body 11 is driven to move up and down relative to the second furnace body 12 by the lifting device. When the lifting device drives the first furnace body 11 to move downward relative to the second furnace body 12, the first furnace body 11 and the second furnace body 12 can be assembled to form a process chamber 15; when the first furnace body 11 moves upward relative to the second furnace body 12, the first furnace body 11 and the second furnace body 12 are separated, and the first furnace body 11 is raised, which is convenient for maintenance of the equipment.

[0122] Furthermore, the lifting device includes an electric rod or a hydraulic cylinder or a pneumatic cylinder or an electromagnetic push rod.

[0123] The first furnace body 11 can be driven to move up and down relative to the second furnace body 12 by an electric rod, a hydraulic cylinder, a gas cylinder or an electromagnetic push rod, and the lifting device has a simple structure and low cost.

[0124] Furthermore, the number of the lifting devices is multiple, for example, the lifting devices are electric rods, and the number of the electric rods is four.

[0125] Furthermore, a guide portion is provided on the first furnace body 11 , and a guide matching portion is provided on the second furnace body 12 . The guide portion matches with the guide matching portion to guide the first furnace body 11 to move up and down relative to the second furnace body 12 .

[0126] The guide portion and the guide matching portion cooperate to guide the lifting action (up and down movement) of the first furnace body 11 relative to the second furnace body 12, realize the up and down reciprocating movement of the first furnace body 11 relative to the second furnace body 12, and prevent the first furnace body 11 from deviating during the movement relative to the second furnace body 12.

[0127] Further, the guide portion includes a guide rod 701 provided on the first furnace body 11, the guide matching portion includes a guide groove 702 provided on the second furnace body 12, the guide rod 701 is located in the guide groove 702 and moves up and down relative to the guide groove 702; or, the guide portion includes a guide groove 702 provided on the first furnace body 11, the guide matching portion includes a guide rod 701 provided on the second furnace body 12, the guide rod 701 is located in the guide groove 702 and moves up and down relative to the guide groove 702.

[0128] When the first furnace body 11 moves up and down relative to the second furnace body 12 , the guide rod 701 is located in the guide groove 702 and moves up and down relative to the guide groove 702 to guide the lifting action of the first furnace body 11 relative to the second furnace body 12 .

[0129] Furthermore, the guide groove 702 and the guide rod 701 are arranged on the outer surface of the furnace body 1, and the number of the guide grooves 702 is multiple, and the number of the guide rods 701 is equal to the number of the guide grooves 702 and corresponds one to one. For example, the guide rods 701 and the guide groove 702 are arranged on both side surfaces of the furnace body 1, and the guide rod 701 is a guide rod arranged along the up and down directions. The guide groove 702 includes a first protrusion and a second protrusion, and the first protrusion and the second protrusion are arranged opposite to each other and define the guide groove 702.

[0130] Furthermore, the furnace body equipment includes: a waste discharge device 50, the waste discharge device 50 includes a waste discharge pipe 19, a waste discharge box 20 and a connecting port 23, the waste discharge pipe 19 is connected to at least one first inner chamber 13, the waste discharge box 20 is connected between the waste discharge pipe 19 and the connecting port 23, and there is a gap between the connecting port 23 and the waste discharge box 20 that is connected to the outside world.

[0131] The exhaust pipe 19 is connected to and communicated with the first inner chamber 13. A portion of the hot air in the first inner chamber 13 enters the exhaust pipe 19, and the hot air in the exhaust pipe 19 enters the exhaust box 20 and is discharged to the outside through the exhaust box 20, thereby discharging a portion of the hot air in the first inner chamber 13 out of the furnace body 1 to ensure the quality of the air in the process chamber 15.

[0132] Furthermore, the heating device 40 includes a plurality of heating zones 22 , which are sequentially spliced, and the first inner chamber 13 of the first furnace body 11 of each heating zone 22 is connected and communicated with the waste pipe 19 , and the waste pipe 19 is gathered and communicated with the waste box 20 .

[0133] Under the action of driving force, the gas flows from the waste discharge pipe 19 into the waste discharge box 20, and then flows from the waste discharge box 20 into the connecting port 23. There is a gap connected to the outside world at the connection between the waste discharge box 20 and the connecting port 23. In this way, when the driving force is too large, outside air can enter the connecting port 23 from the gap, thereby preventing excessive gas in the second inner chamber 14 from flowing out to the connecting port 23 and causing insufficient gas in the process chamber 15.

[0134] Furthermore, a waste discharge box 20 is connected to a plurality of waste discharge pipes 19 which are arranged horizontally.

[0135] Furthermore, along the flow direction of the gas in the connection port 23 , the flow area of ​​the connection port 23 decreases.

[0136] Along the flow direction of the gas in the connecting port 23 , the flow area of ​​the connecting port 23 is reduced, which has the effect of making the gas flow through the connecting port 23 evenly and smoothly and reducing the flow resistance of the gas in the connecting port 23 .

[0137] Furthermore, along the flow direction of the gas in the connecting port 23 , the flow area of ​​the connecting port 23 gradually decreases, for example, the connecting port 23 is in a trumpet shape.

[0138] Furthermore, the waste discharge device 50 includes a fire damper 24 . The fire damper 24 is connected to an end of the connection port 23 away from the waste discharge box 20 . The fire damper 24 is used to open or close the connection port 23 .

[0139] The gas flows through the exhaust pipe 19, the exhaust box 20, the connection port 23 and the fire damper 24 in sequence. When the temperature of the gas in the second inner chamber 14 or the process chamber 15 is too high and exceeds the preset temperature value, the fire damper 24 is closed to isolate the heat source and prevent some parts of the high-temperature gas equipment from being damaged. When the temperature of the gas in the second inner chamber 14 or the process chamber 15 is less than or equal to the preset temperature value, the fire damper 24 is opened to allow the gas to flow through the fire damper 24.

[0140] Furthermore, the waste discharge device 50 is disposed on the first furnace body 11 , and the waste discharge pipe 19 is communicated with the first inner chamber 13 of the first furnace body 11 .

[0141] The compressed air inlet 142 is arranged on the second furnace body 12, and the waste discharge device 50 is arranged on the first furnace body 11, so as to avoid interference between the compressed air inlet 142 and the waste discharge device 50 and facilitate the arrangement of the compressed air inlet 142 and the waste discharge device 50.

[0142] Furthermore, the first furnace body 11 is located above the second furnace body 12 , and the waste discharge device 50 is located above the compressed air inlet 142 .

[0143] Furthermore, the carrier 28 includes a support plate and a positioning member and a fixing member arranged on the support plate, the positioning member is used to support the bottom of the silicon wafer 29, the fixing member and the positioning member are arranged on the same side of the support plate, and the fixing member is used to limit the side of the silicon wafer 29 and enable the silicon wafer 29 to be transmitted sideways in the carrier 28.

[0144] The fixing part and the positioning part are arranged on the same side of the support plate, so that the carrier 28 can realize the sideways transportation of the silicon wafer 29, meet the transportation requirements, and effectively improve the efficiency of drying and curing, so that the silicon wafer 29 can be transported to the furnace body 1, and the front and back sides of the silicon wafer 29 can be heated, dried and cured, shortening the process time, and improving the drying and curing effect and the yield rate.

[0145] Furthermore, the fixing member includes a first connecting rod and a second connecting rod that are relatively arranged, and the first connecting rod and the second connecting rod are arranged on the support plate. The fixing member also includes an ear support portion that is arranged between the first connecting rod and the second connecting rod. The ear support portion is located on the side of the first connecting rod and the second connecting rod that is away from the positioning member and defines an opening groove whose opening is facing the positioning member. The ear support portion is used to limit the side of the silicon wafer 29.

[0146] The fixing piece stands upright at the end of the support plate, and an ear support portion is provided at the end of the fixing piece away from the support plate. The ear support portion surrounds the corresponding side edges of the silicon wafer 29. The ear support portion contacts the side edges of the silicon wafer 29 to avoid contacting the middle of the silicon wafer 29, thereby effectively protecting the printing on the silicon wafer 29 and improving the product yield and photoelectric efficiency.

[0147] The fixing member is constructed by bending a rod body, and the fixing member has a first connecting rod and a second connecting rod spaced front and back, and the gap between the first connecting rod and the second connecting rod is adapted to the side-standing placement of the silicon wafer 29, and the first connecting rod and the second connecting rod are connected together by the ear support part at one end away from the support plate. The structure is simple and easy to manufacture. Furthermore, the ear support part is V-shaped side wing shape, which meets the width size of the silicon wafer 29, and ensures that the ear support part surrounds the corresponding side of the silicon wafer 29 and properly supports it, so as to realize the side-standing transportation of the silicon wafer 29 and meet the transmission requirements.

[0148] Furthermore, the support plate and the fixing part are combined into a concave shape, and the support plate is arranged horizontally across the conveying direction of the silicon wafer 29. The upper side surface of the support plate and the fixing part enclose the silicon wafer 29 to allow it to be placed sideways. The fixing part contacts the edge of the silicon wafer 29 and avoids contacting the middle of the silicon wafer 29, thereby effectively protecting the printing on the silicon wafer 29.

[0149] After the first connecting rod and the second connecting rod extend outwardly to both ends along the axial direction (length direction) of the support plate, a V-shaped ear support portion is formed with a V-shaped groove for placing the silicon wafer 29, thereby reducing the possibility of scratching the battery cell (silicon wafer 29).

[0150] Furthermore, there are multiple fixing members, for example, there are two fixing members, and the two fixing members are respectively located at two ends of the support plate in the length direction.

[0151] Furthermore, if Figure 6 As shown, the transmission member includes a double-row chain 25, a double-row sprocket 26 and a transmission shaft 27. The double-row sprocket 26 is meshed with the double-row chain 25. The transmission shaft 27 passes through the double-row sprocket 26 and is used to drive the double-row sprocket 26 to rotate; wherein, the number of the transmission shafts 27 is multiple, wherein at least one transmission shaft 27 is a driving shaft 271 to form a transmission cycle, and each transmission shaft 27 is sequentially provided with multiple double-row sprockets 26, and the number of the double-row chains 25 is equal to the number of the double-row sprockets 26 provided on a transmission shaft 27 and corresponds one to one.

[0152] The carrier 28 is connected to the middle chain plate, so as to move with the chain to realize the transmission of the silicon wafer 29. The double-row chain 25 is used for transmission, which can improve the stability and accuracy of the transmission.

[0153] The double-row chain 25 includes an outer link plate, a pin shaft, a middle link plate and an inner link plate. The two outer link plates are connected by a pin shaft to form an outer link. The middle link plate is installed on the pin shaft between the two outer link plates. An inner link is arranged between the middle link plate and the outer link plate, wherein the inner link includes an inner link plate.

[0154] The double-row sprocket 26 includes two sprockets arranged opposite to each other, and further, the two sprockets are symmetrically arranged. One sprocket in the double-row sprocket 26 meshes with one chain in the double-row chain 25, and the other sprocket in the double-row sprocket 26 meshes with the other chain in the double-row chain 25 to drive the double-row chain 25 to move smoothly.

[0155] Furthermore, there are multiple transmission shafts 27, at least one of which is a driving shaft 271 to form a transmission cycle, and each transmission shaft 27 is sequentially provided with multiple double-row sprockets 26, and the number of double-row chains 25 is equal to and corresponds to the number of double-row sprockets 26 provided on a transmission shaft 27.

[0156] At least one of the multiple transmission shafts 27 is a driving shaft 271, and the rest are driven shafts 272. The driving shaft 271 provides rotational power for the double-row sprocket 26 (driving sprocket) connected thereto, and the driving sprocket meshes with the chain to drive the chain to rotate. The double-row sprocket 26 (driven sprocket) connected to the driven shaft 272 rotates freely without interference under the drive of the driving shaft 271, forming an endless transmission circle.

[0157] A plurality of double-row sprockets 26 are sequentially disposed on each transmission shaft 27 , and chains are respectively engaged on the double-row sprockets 26 on the transmission shaft 27 , thereby increasing the number of carriers 28 conveyed per unit time and improving the conveying efficiency of the silicon wafers 29 .

[0158] The furnace equipment includes a single or multiple heating devices 40 , a transmission device, an electrical control 30 , and a single or multiple waste discharge devices 50 .

[0159] In a specific embodiment, the heating device 40 includes an upper furnace body 1 (a first furnace body 11) and a lower furnace body 1 (a second furnace body 12). The lower furnace body 1 is fixed on a frame, and the upper furnace body 1 is above the lower furnace body 1. The upper furnace body 1 can be supported to rise by four electric rods, which is convenient for equipment maintenance. Four guide rods 701 are used on both sides of the upper furnace body 1 and the lower furnace body 1 to guide the lifting and lowering movement of the upper furnace body 1. The upper furnace body 1 is lowered by the electric rods and merged with the lower furnace body 1 to form a process chamber 15, and the battery cells are dried and cured in the process chamber 15.

[0160] The conveying device 60 is constructed based on chain transmission, and includes a double-row sprocket 26, a double-row chain 25 and a carrier 28. The double-row chain 25 passes through the process chamber 15, and the carrier 28 installed on the double-row chain 25 conveys the battery cell from the furnace equipment entrance through the process chamber 15 of the heating device 40 to the exit.

[0161] Each double-row chain 25 is connected end to end, and each double-row chain 25 is meshed with four double-row sprockets 26 to form a circulating chain ring; the four double-row sprockets 26 are composed of a driving sprocket and three driven sprockets, the driving sprocket is provided with rotational power by the driving shaft 271, and the driven sprockets rotate freely without interfering with each other; each carrier 28 is installed on the middle chain plate of the double-row chain 25, and each carrier 28 carries materials independently; four rows of double-row sprockets 26 are installed in parallel on each transmission shaft 27.

[0162] The waste discharge device 50 includes a waste discharge pipe 19, a waste discharge box 20, a connection port 23 and a fire damper 24. The waste discharge pipe 19 is connected to the second inner chamber 14 of the heating device 40, and discharges a part of the hot air in the second inner chamber 14, so that clean cold air enters the second inner chamber 14, ensuring that the quality of the hot air in the second inner chamber 14 is clean.

[0163] In summary, the device (furnace equipment) for drying and curing silicon wafers 29 provided in the embodiment of the present invention can achieve uniform temperature inside the furnace cavity, meet the production of HIT solar photovoltaic cell silicon wafers 29, and improve the drying and curing effect and yield rate. Specifically:

[0164] 1. The air is preheated in the second inner chamber 14 and then evenly blown into the process chamber 15 to make the temperature of the air blown into the process chamber 15 uniform, thereby ensuring that the temperature in the process chamber 15 is more uniform and constant.

[0165] 2. Use hot air circulation heating to reduce heat loss and ensure constant temperature in the process chamber 15.

[0166] 3. The heating area 22 of each unit is provided with a fresh air replenishment structure (compressed air inlet 142) and a waste gas discharge structure (waste discharge device 50) to ensure the cleanliness of the gas in the heating process chamber 15 through the internal air circulation.

[0167] In the description of the present invention, unless otherwise clearly specified and limited, the term "plurality" refers to two or more than two; unless otherwise specified or explained, the terms "connection", "fixed" and the like should be understood in a broad sense, for example, "connection" can be a fixed connection, a detachable connection, an integral connection, or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0168] In the description of this specification, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation, and therefore, cannot be understood as a limitation on the present invention.

[0169] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0170] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A furnace equipment, characterized in that: include: The heating device comprises a furnace body, a heating element and an exhaust device, wherein the furnace body is provided with a first inner chamber and a second inner chamber which are connected to each other, the first inner chamber is suitable for being connected to the process chamber, the heating element is arranged in the second inner chamber, and the exhaust device is arranged on the furnace body and is used for extracting the gas in the second inner chamber into the first inner chamber; A conveying device, at least partially disposed in the process chamber, comprising a transmission member and a carrier, wherein the carrier is used to carry the silicon wafer and is disposed on the transmission member, and the transmission member is used to drive the carrier to move relative to the process chamber; a flow equalizer plate, constituting at least part of the side wall of the first inner chamber and used to separate the first inner chamber from the process chamber, the flow equalizer plate being provided with a first through hole and a second through hole, the first through hole corresponding to the first inner chamber, and the first inner chamber being connected to the process chamber through the first through hole, the second through hole corresponding to the second inner chamber, and the second inner chamber being connected to the process chamber through the second through hole; wherein the number of the first through holes is multiple, and along the direction in which the gas flows from the first inner chamber to the process chamber, the cross-sectional area of ​​the first through holes decreases, and the opening area of ​​a single first through hole is smaller than the opening area of ​​a single second through hole; An adjusting device is arranged at the second through hole and is used for adjusting the opening size of the second through hole.

2. The furnace equipment according to claim 1, characterized in that: There are two furnace bodies, which are a first furnace body and a second furnace body arranged opposite to each other. The first furnace body and the second furnace body surround the process chamber. A cold air inlet is provided on the second inner chamber of the first furnace body, and a compressed air inlet is provided on the second inner chamber of the second furnace body.

3. The furnace equipment according to claim 2, characterized in that: The furnace body is provided with a lifting device to drive the first furnace body to move up and down relative to the second furnace body, wherein the lifting device includes an electric rod or a hydraulic cylinder or a gas cylinder or an electromagnetic push rod.

4. The furnace equipment according to claim 2, characterized in that: The first furnace body is provided with a guide portion, and the second furnace body is provided with a guide matching portion, and the guide portion matches with the guide matching portion to guide the first furnace body to move up and down relative to the second furnace body.

5. The furnace equipment according to claim 4, characterized in that: The guide portion includes a guide rod provided on the first furnace body, the guide matching portion includes a guide groove provided on the second furnace body, the guide rod is located in the guide groove and moves up and down relative to the guide groove; or The guide portion includes a guide groove provided on the first furnace body, and the guide matching portion includes a guide rod provided on the second furnace body. The guide rod is located in the guide groove and moves up and down relative to the guide groove.

6. The furnace equipment according to any one of claims 2 to 5, characterized in that: include: A waste discharge device, the waste discharge device comprising a waste discharge pipe, a waste discharge box, a connection port and a fire damper, the waste discharge pipe is connected to at least one of the first inner chambers, the waste discharge box is connected between the waste discharge pipe and the connection port, and a gap connected to the outside is provided between the connection port and the waste discharge box, the fire damper is connected to one end of the connection port away from the waste discharge box, and the fire damper is used to open or close the connection port; Wherein, along the flow direction of the gas in the connecting port, the flow area of ​​the connecting port decreases.

7. The furnace equipment according to claim 6, characterized in that: The waste discharge device is arranged on the first furnace body, and the waste discharge pipe is communicated with the first inner chamber of the first furnace body.

8. The furnace equipment according to any one of claims 1 to 5, characterized in that: The carrier includes a support plate and a positioning member and a fixing member arranged on the support plate, wherein the positioning member is used to support the bottom of the silicon wafer, the fixing member and the positioning member are arranged on the same side of the support plate, and the fixing member is used to limit the side edge of the silicon wafer and enable the silicon wafer to be transmitted sideways in the carrier.

9. The furnace equipment according to any one of claims 1 to 5, characterized in that: The transmission member comprises a double-row chain, a double-row sprocket and a transmission shaft, the double-row sprocket is meshed with the double-row chain, the transmission shaft passes through the double-row sprocket and is used to drive the double-row sprocket to rotate; Among them, there are multiple transmission shafts, at least one of which is a driving shaft to form a transmission cycle, and each of the transmission shafts is sequentially provided with multiple double-row sprockets, and the number of double-row chains is equal to and corresponds to the number of double-row sprockets provided on one of the transmission shafts.

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