Lead frame for die

Abstract

Embodiments of the present application relate to a leadframe for a die. Embodiments of a semiconductor device (100) include a silicon die (101) having a coating (112) of a metallic material applied on one side; a leadframe (102) having a mounting pad (138) smaller in area than the silicon die (101), the silicon die (101) mounted on the leadframe (102) via the mounting pad (104), and an etched region (106) filled with a non-conductive molding compound, the etched region on a side of the leadframe (102) along an edge of the silicon die (101) in contact with one end of the silicon die (101). A quantity of epoxy material (116) is dispensed on the leadframe (102) along a length of the metallic material coating (112) to form a fillet on one side of the silicon die (101) configured to adhere the silicon die (101) to the leadframe (102) and prevent the metallic material coating (116) from contacting the leadframe (102).

Description

Technical Field

[0001] The present invention relates to semiconductor devices, or more particularly to lead frames for dies. Background Art

[0002] In semiconductor packaging, the leadframe is the structure inside the chip package that carries signals from the die to the outside. The die inside the package is typically glued to the leadframe, and wirebonds then attach the die pads to the leads. The leadframe is manufactured by removing material. Etching and stamping are two of the processes used for this. The quality of the leadframe impacts the performance and reliability of the packaged integrated circuit.

[0003] During lead frame manufacturing, metal burrs are caused during wafer dicing by sawing due to the softness of the metal coating. Previous methods of preventing burrs from contacting the lead frame include increasing the gap between the lead frames by adding new material between the metal material and the lead frame, using grid array quad flat no-lead (GQFN) packages, and isolating the lead frames using half-etched tubes. However, these methods require additional procedures and / or additional materials and are not reliable. Summary of the Invention

[0004] The present disclosure relates to an apparatus and method for implementing lead frame isolation through etched preforming. A lead frame apparatus and a method for manufacturing the lead frame apparatus are disclosed. The lead frame includes an etched area filled with a non-conductive molding compound. The lead frame is designed so that metal burrs protruding from the metal material coating present on the back side of the silicon tube core are placed on the etched area filled with the mold rather than on the lead frame itself. The etched area provides electrical isolation between the silicon tube core and the lead frame. More specifically, because the metal burrs contact the etched area filled with the molding compound rather than the lead frame, leakage and short circuits are prevented. The lead frame is further designed so that the area of ​​the lead frame's mounting pad is smaller than the area of ​​the silicon tube core mounted on the lead frame. The lead frame design is implemented for semiconductor product packaging.

[0005] In one embodiment, a semiconductor device having lead frame isolation implemented by etched preforming is disclosed. A semiconductor device having lead frame isolation implemented by etched preforming is disclosed. The semiconductor device includes a silicon die having a metal material coating applied to one side; a lead frame having: a mounting pad having an area smaller than the area of ​​the silicon die, the silicon die being mounted on the lead frame via the mounting pad, and an etched area filled with a non-conductive molding compound on a side of the lead frame that contacts one end of the silicon die along an edge of the silicon die. A large amount of epoxy resin material is dispensed onto the lead frame along the length of the metal material coating to form a fillet weld on one side of the silicon die, the fillet weld being configured to adhere the silicon die to the lead frame and prevent the metal material coating from contacting the lead frame.

[0006] In another example, a method for manufacturing a semiconductor device having leadframe isolation implemented by etched preforming is disclosed. The method includes etching an area within a leadframe such that the area of ​​the leadframe's mounting pads is smaller than the area of ​​a silicon die having a metallic coating. The method further includes filling the etched area with a non-conductive molding compound. The method further includes dispensing a large amount of epoxy material onto the leadframe along the length of the metallic coating to form a fillet weld on one side of the silicon die to adhere the silicon die to the leadframe and prevent the metallic coating from contacting the leadframe. The method further includes mounting the silicon die on the leadframe's mounting pads via the metallic coating and the epoxy material, wherein an edge of the silicon die is in contact with the non-conductive molding compound.

[0007] In another example, a semiconductor device is disclosed that implements leadframe isolation via an etched preform. The semiconductor device includes a silicon die having a metallic coating applied to one side. The semiconductor device further includes a leadframe having a mounting pad having an area smaller than that of the silicon die, the silicon die being mounted on the leadframe via the mounting pad, and an etched region filled with a non-conductive molding compound on one side of the leadframe, along an edge of the silicon die and in contact with one end of the silicon die. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 FIG. 1 is a block diagram of an example semiconductor device with leadframe isolation implemented by etched preform.

[0009] Figure 2 depiction Figure 1 A close-up view of an insert region of an etched semiconductor device.

[0010] Figure 3 Block diagram of a semiconductor device with lead frame isolation implemented by half-etch preforming.

[0011] Figure 4 Depicted is an example first stage in fabricating an etched semiconductor device providing leadframe isolation.

[0012] Figure 5 Depicted is an example second stage of fabricating an etched semiconductor device providing leadframe isolation.

[0013] Figure 6 Depicted is an example third stage of fabricating an etched semiconductor device providing leadframe isolation.

[0014] Figure 7 Example methods of fabricating etched semiconductor devices providing leadframe isolation are described. DETAILED DESCRIPTION

[0015] The leadframe design disclosed herein will be described with reference to the figures illustrated in the accompanying drawings. As will be seen in the figures, the leadframe design allows metal burrs to contact etched areas filled with a non-conductive mold compound. Because the metal burrs contact the non-conductive mold compound rather than the leadframe, electrical leakage and short circuits are prevented.

[0016] Figure 1 FIG. 1 is a block diagram of a semiconductor device 100 having lead frame isolation implemented by etched preforming. Figure 1 As shown in FIG, semiconductor device 100 includes a silicon die 101 having a metallic coating 112 on one side. A large amount of epoxy material 116 is dispensed onto lead frame 102 along the length of metallic coating 112 for adhering silicon die 101 to lead frame 102, thereby forming a fillet weld on one side of silicon die 101. In addition to providing adhesion between silicon die 101 and lead frame 102, epoxy material 116 also prevents metallic coating 112 from contacting lead frame 102. Lead frame 102 includes mounting pads 104 such that silicon die 101 is mounted on lead frame 102 via mounting pads 104. The area of ​​mounting pads 104 is smaller than the area of ​​silicon die 101. Lead frame 102 includes a first etched region 106 filled with a non-conductive mold compound on one side of lead frame 102 that contacts one end of silicon die 101 along the edge of silicon die 101. The lead frame 102 further includes a second etched region 107 filled with a non-conductive mold compound, which is located on a side opposite to the first etched region 106 along the edge of the silicon die 101 and in contact with the other end of the silicon die 101. The first etched region 106 and the second etched region 107 provide electrical isolation between the silicon die 101 and the lead frame 102. Figure 1In the example shown in FIG, the first etched region 106 has two regions that span the thickness of the leadframe 102: a first region 108 of the first etched region 106 and a second region 110 of the first etched region 106. As will be described in more detail below, the first etched region 106 is designed to have the first region 108 and the second region 110. In one example, only the first region 108 is filled with a non-conductive mold compound, while the second region 110 is empty (e.g., to conserve material). In another example, the first region 108 is filled with a different type of non-conductive mold compound than the second region 110 (e.g., a material that may be less expensive, but it is desirable that both regions be filled with a non-conductive mold compound). If the first region 108 and the second region 110 comprise the same material, then a continuous material exists in the first region 108 and the second region 110. If the second region 108 is a void, or if the first region 108 and the second region 110 include different materials, the potential barrier between the first region 108 and the second region 110 represents a transition between the composition of the first region 108 and the composition of the second region 110. Furthermore, the second etched region 107 has two regions spanning the thickness of the lead frame, namely, a first region 109 of the second etched region 107 and a second region 111 of the second etched region 107.

[0017] Additionally, as will be described in greater detail below, the second etched region 107 is designed to have a first region 109 and a second region 111. In one example, only the first region 109 is filled with a non-conductive mold compound, while the second region 111 is empty (e.g., to conserve material). In another example, the first region 109 is filled with a different type of non-conductive mold compound than the second region 111 (e.g., a material that may be less expensive, but it is desirable for both regions to be filled with a non-conductive mold compound). If the first region 109 and the second region 111 comprise the same material, then a continuous material exists between the first region 109 and the second region 111. If the second region 109 is empty, or if the first region 109 and the second region 111 comprise different materials, then a potential barrier between the first region 109 and the second region 111 represents a transition between the composition of the first region 109 and the composition of the second region 111.

[0018] like Figure 1As can be seen, the metal burr 114 protrudes from the metal material coating 112 on both sides of the metal material coating 112. Since the length of the mounting pad 104 is less than the length of the silicon die 101, the metal burr 114 will contact and rest on the first and second etched areas 106, 107 rather than contact and rest on the leadframe 102 itself, or more specifically, on the mounting pad 104 of the leadframe 102. The first and second etched areas 106, 107 provide electrical isolation between the silicon die 101 and the leadframe 102. Since the metal burr 114 contacts the first region 108 of the first etched area 106 filled with the non-conductive molding compound and the first region 109 of the second etched area 107 filled with the non-conductive molding compound rather than the leadframe 102 or the mounting pad 104 of the leadframe 102, leakage and shorting are prevented. The inset area 113 shows where the metal burr 114 contacts the first etched area 106 rather than the mounting pad 104 of the leadframe 102.

[0019] The first etched area 106 of the leadframe 102 and the second etched area 107 of the leadframe 102 have a thickness similar to that of the leadframe 102. In some examples, the entire depth / thickness of the first etched area 106 and / or the second etched area 107 is filled with the molding compound. For example, and specifically for the example shown in Figure 1 In the example shown in, the first region 108 of the first etched area 106 is filled with the molding compound and the second region 110 of the first etched area 106 is also filled with the molding compound; and the first region 109 of the second etched area 107 is filled with the molding compound and the second region 111 of the second etched area 107 is also filled with the molding compound. In other examples, a portion (e.g., one-half) of the first etched area 106 and / or the second etched area 107 is filled with the molding compound. In such examples, the first region 108 of the first etched area 106 is filled with the molding compound and the second region 110 of the first etched area 106 is not filled with the molding compound; and the first region 109 of the second etched area 107 is filled with the molding compound and the second region 111 of the second etched area 107 is not filled with the molding compound. The mounting pad 104 extends across the support structure 105 of the leadframe 102. The support structure 105 corresponds to and has a similar thickness to the second region 110 of the first etched area 106 and the second region 111 of the second etched area 107. The area of the support structure 105 depends on the heat slug size required or provided by the customer or user of the leadframe 102. In Figure 1 In the example shown in, the support structure 105 of the leadframe 102 has a larger area than the mounting pad 104. Thus, in Figure 1, edges 132, 134 of support structure 105 extend beyond edges 136, 138 of mounting pad 104 to provide stability when mounting silicon die 101. In other examples, support structure 105 of lead frame 102 does not have an area larger than mounting pad 104. In examples where support structure 105 of lead frame 102 does not have an area larger than mounting pad 104, edges 132, 134 of support structure 105 are flush with, or substantially flush with, edges 136, 138 of mounting pad 104; or, support structure 105 of lead frame 102 has an area smaller than mounting pad 104 of lead frame 102, such that edges 132, 134 of support structure are below mounting pad 104. Similar variations in length and position are possible with respect to edges 133 and 135, and edges 137 and 139. In some examples, support structure 105 and mounting pad 104 are part of the same original structure, in which case support structure 105 and mounting pad 104 are made of the same material, wherein mounting pad 104 is etched beyond support structure 105 to give lead frame 104 a shape similar to that of lead frame 104. Figure 1 In other examples, the support structure 105 and the mounting pad 104 are made of different materials, or are made of the same material but as separate pieces, but in this case, the support structure 105 and the mounting pad 104 are attached by electrical or mechanical procedures, such as by epoxy welding, riveting, welding, or the like.

[0020] The first etched region 106 and the second etched region 107 of the leadframe 102 filled with a non-conductive mold compound do not require additional processes to be performed over an extended period of time to manufacture additional expensive materials (e.g., conductive epoxy, conductive die attach film, and / or silicon spacers) to increase the gap between the epoxy material 116 and the leadframe 102. Furthermore, the etched molded region of the leadframe (including the first etched region 106 and the second etched region 107) does not require the use of a grid array flat no-lead (GQFN) package or the implementation of an unreliable half-etched gap without insert molding material in the leadframe 102. The overall thermal conductivity of the semiconductor device 100 is not compromised because only a portion of the area of ​​the leadframe 102 on which the silicon die 101 is mounted is an etched gap filled with mold compound to electrically isolate the metal burr 114.

[0021] The design disclosed herein for adhering silicon die 101 to lead frame 102 does not require additional processing for lead frames that omit first etched region 106 and second etched region 107. Specifically, in some examples, lead frame 102 having first etched region 106 and second etched region 107 filled with molding compound is provided to an IC packaging machine. Thus, silicon die 101 can be mounted on lead frame 102 without requiring additional processing. The yield rate of IC chips packaged with lead frame 102 is higher because the risk of short circuits and leakage is mitigated. The design of lead frame 102 also results in faster production cycle times without changing the composition of silicon die 101 and / or the procedure for cutting silicon die 101 from a wafer.

[0022] Figure 2 exhibit Figure 1 For simplified explanation purposes, Figure 1 and 2 10. The same reference numerals are used to represent the same structure in the figures. The insert region 113 of the semiconductor device shows a metal burr 114 protruding from one end of the metal material coating 112 to contact the first etched region 106 filled with molding compound rather than the mounting pad 104 of the lead frame 102. A large amount of epoxy material 116 is dispensed onto the lead frame 102 for adhering the silicon die 101 and the lead frame 102 to form a fillet weld on one side of the silicon die 101. The epoxy material 116 also provides electrical isolation between the silicon die 101 and the lead frame 102. In some examples, the second region 110 of the first etched region 106 is filled with molding compound made of the same material as the material filling the first region 108 of the first etched region 106. In other examples, to save material, the second region 110 of the first etched region 106 is empty / hollow (e.g., a void). The design of the lead frame 102 provides electrical isolation between the mounted silicon die 101 and the lead frame 102. The support structure 105 of the lead frame 102 corresponds to the second region 110 of the first etched area 106 and has a similar thickness as the second region. Figure 1 As discussed, the area of ​​the support structure 105 depends on the size of the thermal pad required or provided by the customer or user of the lead frame 102. Figure 2 In the example shown in FIG, the support structure 105 of the lead frame 102 has an area larger than the mounting pad 104. Figure 2, an edge 132 of the support structure 105 extends beyond an edge 136 of the mounting pad 104 to provide stability when mounting the silicon die 101. In other examples, the support structure 105 of the lead frame 102 does not have an area larger than the mounting pad 104. In examples where the support structure 105 of the lead frame 102 does not have an area larger than the mounting pad 104, the edge 132 of the support structure 105 is flush with, or substantially flush with, the edge 136 of the mounting pad 104; or, the support structure 105 of the lead frame 102 has an area smaller than the mounting pad 104 of the lead frame 102, such that the edge 132 of the support structure is below the mounting pad 104.

[0023] Figure 3 FIG3 is a block diagram of a semiconductor device 300 with lead frame isolation implemented by half-etch preforming. For the purpose of simplifying the explanation, Figure 1 and 3 The same reference numerals are used to denote the same structures (except for the first and second regions of the first and second etched areas). Figure 3 In the example shown in , the second area 310 of the first etched region 106 is empty / hollow (eg, a void), while the first area 308 of the first etched region 106 is filled with a non-conductive mold compound. Figure 3 In FIG, the second region 311 of the second etched region 107 is empty / hollow (eg, a void), while the first region 309 of the second etched region 107 is filled with a non-conductive molding compound. In contrast, in FIG. Figure 1 In FIG. 1 , the second region 310 of the first etched region 106 is filled with a non-conductive molding compound, as is the second region 311 of the second etched region 107. Figure 1 and Figure 3 Other arrangements besides those depicted in FIG are also possible. In some examples, the second area 310 of the first etched region 106 is filled with molding compound, while the second area 311 of the second etched region 107 is not filled with molding compound, or vice versa; or, in some examples, different materials are used to fill the first area 308 of the first etched region 106, the second area 310 of the first etched region 106, the first area 309 of the second etched region 107, and the second area 311 of the second etched region 107, respectively. The types of molding compound materials include, for example, different generations of molding compounds. Specific types of molding compound materials include first-generation low-stress, second-generation low-stress, third-generation ultra-low-stress, moisture-resistant, and crack-resistant types.

[0024] Figures 4 to 6 The process of manufacturing a semiconductor device with lead frame isolation achieved by etched preform is described. Figures 4 to 6 The procedure described in the Figure 1The semiconductor device 100 and / or Figure 3 For the purpose of simplifying the explanation, Figure 1 、 2 , 4, 5 and 6 use the same figure marks to represent the same structure.

[0025] Figure 4 A first stage 400 of manufacturing a semiconductor device is depicted, which involves manufacturing a lead frame 102. When manufacturing the lead frame 102, the length of the silicon die to be mounted on the lead frame 102 is a given parameter. The mounting pads 104 of the lead frame 102 are designed such that the length of the mounting pads 104 is less than the length of the silicon die.

[0026] A first etched region 106 is etched into the lead frame 102 on one side of the lead frame 102. The height / thickness of the first etched region 106 spans the height / thickness of the lead frame 102. Furthermore, a second etched region 107 is etched on the side of the lead frame 102 opposite the first etched region 106. The height / thickness of the second etched region 107 spans the height / thickness of the lead frame 102. The first etched region 106 includes a first area 108 (e.g., the upper half) of the first etched region 106 and a second area 110 (e.g., the lower half) of the first etched region 106. In some examples, the second area 110 of the first etched region 106 has a similar length to the first area 108 of the first etched region 106. The second area 110 of the first etched region 106 is offset by a first distance 120 relative to the first area 108 of the first etched region 106. Similarly, second etched region 107 includes first region 109 of second etched region 107 and second region 111 of second etched region 107. In some examples, second region 111 of second etched region 107 has a similar length to first region 109 of second etched region 107. Second region 111 of second etched region 107 is offset by a second distance 122 relative to first region 109 of second etched region 107. First distance 120 and second distance 122 allow support structure 105 of second portion 103 of lead frame 102 supporting mounting pad 104 to be longer than mounting pad 104 to provide greater stability when mounting a silicon die.

[0027] However, as mentioned above with respect to Figure 1 and 2As discussed, the area of ​​support structure 105 depends on the size of the thermal pad required or provided by the customer or user of leadframe 102. Thus, in some examples, second area 110 of first etched region 106 is not offset from first area 108 of first etched region 106 and is flush with the first area, such that first distance 120 is zero or substantially zero and edge 132 is flush with edge 136, or second area 111 of second etched region 107 is not offset from first area 109 of second etched region 107 and is flush with the first area, such that second distance 122 is zero or substantially zero and edge 134 is flush with edge 138. In other examples, the area of ​​support structure 105 is smaller than the area of ​​mounting pad 104, such that edges 132 and 134 of the support structure are below mounting pad 104. Similar variations in length and position are possible with respect to edges 133 and 135, as well as edges 137 and 139. The second portion 103 of the lead frame 102 corresponds to the second area 110 of the first etched region 106 and the second area 111 of the second etched region 107 and has a similar thickness as the second areas. In some examples, the second portion 103 and the overall lead frame 102 are part of the same original structure. In this case, the second portion 103 and the rest of the lead frame 102 are made of the same material, wherein the second portion 103 is etched more to obtain the second portion 103 as shown in FIG. Figure 1 、 3 4. In other embodiments, the second portion 103 of the lead frame is made of a different material than the rest of the lead frame 102 or is a separate piece, in which case the second portion 103 is attached to the lead frame using an electrical or mechanical process, such as epoxy welding, riveting, welding, or the like.

[0028] Figure 5A second stage 500 of manufacturing a semiconductor device is depicted, which involves inserting a non-conductive mold compound (e.g., a material such as plastic) into the first etched region 106 of the leadframe 102 and inserting the same non-conductive mold compound material into the second etched region 107 of the leadframe 102. In other examples, different mold compound materials are used to fill the first etched region 106 and the second etched region 107, respectively. In some examples, the first region 108 of the first etched region 106 and the first region 109 of the second etched region 107 are filled with the mold compound. In other examples, the entire depth / thickness of the first etched region 106 and the second etched region 107 are filled with the mold compound. In such examples, the second region 110 of the first etched region 106 is filled with the mold compound, and the second region 111 of the second etched region 107 is filled with the mold compound. In some examples, the mold compound used to fill the second area 110 of the first etched region 106 is the same material as the mold compound used to fill the first area 108 of the first etched region 106, and the mold compound used to fill the second area 111 of the second etched region 107 is the same material as the mold compound used to fill the first area 109 of the second etched region 107. In other examples, the mold compound used to fill the second area 110 of the first etched region 106 is a different material from the mold compound used to fill the first area 108 of the first etched region 106, and the mold compound used to fill the second area 111 of the second etched region 107 is a different material from the mold compound used to fill the first area 109 of the second etched region 107. Furthermore, in some examples, different mold compounds are used to fill the first etched region 106 and the second etched region 107, respectively.

[0029] Figure 6The third stage 600 of manufacturing a semiconductor device is depicted. During the third stage 600, a silicon die 101 having a metallic coating 112 is mounted on mounting pads 104 of a lead frame 102. The metallic coating 112 contributes to the thermal performance of the silicon die 101. The silicon die 101 and the metallic coating 112 are mounted on the lead frame 102 via an epoxy material 116. A large amount of epoxy material 116 is dispensed onto the lead frame 102 to form a fillet weld on one side of the silicon die for adhering the silicon die 101 to the lead frame 102. The epoxy material 116 also prevents the metallic coating 112 from contacting the lead frame 102. Thus, the epoxy material 116 provides electrical isolation between the silicon die 101 and the lead frame 102. However, during wafer dicing, metal burrs 114 are generated near the opposite ends of the metallic coating 112. The metal burrs 114 penetrate the epoxy material 116 and, if the metal burrs were not for the etched (e.g., half-etched) design of the lead frame 102, would contact the lead frame 102 (and the mounting pads 104 of the lead frame 102), thereby causing leakage and short circuits. Here, instead, the metal burrs 114 contact the mold compound in the first etched area 106 and the second etched area 107 instead of the lead frame 102 and the mounting pads 104 of the lead frame 102.

[0030] Figure 7 An example method 700 for fabricating an etched (including half-etched) semiconductor device providing lead frame isolation is described. The method 700 may be employed to fabricate Figure 1 The semiconductor device 100 and / or Figure 3 At 702, according to the semiconductor device 300 Figure 4 According to the design and description of the present invention, a first etched region and a second etched region are etched in the lead frame. The first etched region and the second etched region are etched so that the length of the mounting pad of the lead frame is less than the length of the silicon tube die having the metal material coating. The metal material coating contributes to the thermal performance of the silicon tube die. At 704, according to Figure 5 In some examples, the entire thickness of the first etched region and the second etched region is filled with a non-conductive molding compound (e.g., Figure 1 In other examples, a region (eg, half) of the first etched region and the second etched region is filled with a non-conductive molding compound (eg, Figure 3 At 706 and 708, method 700 complies with Figure 6At 706, a large amount of epoxy material is dispensed onto the lead frame along the length of the metal coating to form a fillet weld on one side of the silicon die. The epoxy material is dispensed so that the silicon die adheres to the lead frame and prevents the metal coating from contacting the lead frame. At 708, the silicon die is mounted on the mounting pads of the lead frame via the metal coating and the epoxy material. Metal burrs of the metal coating caused during wafer dicing contact the first and second etched regions filled with non-conductive molding compound rather than the lead frame, thereby preventing leakage and short circuits.

[0031] What has been described above are examples of the present disclosure. For the purposes of describing the present disclosure, it is not possible to describe every conceivable combination of components or methods, but many other combinations and permutations of the present disclosure are possible. Therefore, the present disclosure is intended to cover all such changes, modifications, and variations that fall within the scope of this application, including the appended claims.

Claims

1. A semiconductor device comprising: a silicon die having a coating of metallic material applied to one side; A lead frame comprising: a mounting pad having an area smaller than that of the silicon die, the silicon die being mounted on the lead frame via the mounting pad; and an etched area filled with a non-conductive mold compound on a side of the lead frame that contacts one end of the silicon die along an edge of the silicon die; a quantity of epoxy material dispensed onto the lead frame along a length of the metallic material coating to form a fillet weld on one side of the silicon die, the fillet weld being configured to adhere the silicon die to the lead frame and prevent the metallic material coating from contacting the lead frame, and A metal burr of the metallic material coating at the same end of the lead frame as the etched region contacts the non-conductive mold compound in the etched region to provide electrical isolation between the lead frame and the silicon die, thereby preventing short circuits. 2 . The semiconductor device of claim 1 , wherein a first region of the etched area is filled with the non-conductive mold compound, and a second region of the etched area includes a void or another non-conductive mold compound different from the non-conductive mold compound in the first region. 3 . The semiconductor device of claim 1 , wherein the first region of the etched area and the second region of the etched area span a thickness of the lead frame. 4 . The semiconductor device of claim 1 , wherein the second region of the etched area is offset by a distance relative to the first region of the etched area. 5 . The semiconductor device of claim 1 , wherein the second portion of the lead frame corresponds to a second region of the etched area and spans a thickness of the second region of the etched area. The semiconductor device of claim 1 , wherein the non-conductive molding compound comprises a plastic material.

7. The semiconductor device according to claim 1 , further comprising a second etched region filled with the non-conductive molding compound on a second side of the lead frame along a second edge of the silicon die in contact with a second end of the silicon die, wherein a metal burr of the metal material coating located at the same end of the lead frame as the second etched region contacts the non-conductive molding compound in the second etched region to provide electrical isolation between the lead frame and the silicon die, thereby preventing a short circuit.

8. A method comprising: Etching an area within the lead frame so that the area of ​​the mounting pads of the lead frame is smaller than the area of ​​the silicon die having the metal material coating; filling the etched area with a non-conductive molding compound; dispensing a large amount of epoxy material onto the lead frame along a length of the metallic material coating to form a fillet weld on one side of the silicon die to adhere the silicon die to the lead frame and prevent the metallic material coating from contacting the lead frame; The silicon die is mounted on the mounting pad of the lead frame via the metal material coating and the epoxy resin material, wherein an edge of the silicon die is in contact with the non-conductive molding compound, and wherein a metal burr of the metal material coating located at the same end of the lead frame as the etched area is in contact with the non-conductive molding compound in the etched area to provide electrical isolation between the lead frame and the silicon die, thereby preventing short circuits. 9 . The method of claim 8 , wherein a first region of the etched area is filled with the non-conductive mold compound, and a second region of the etched area includes a void or another non-conductive mold compound different from the non-conductive mold compound in the first region.

10. The method of claim 8, wherein the first region of the etched area and the second region of the etched area span a thickness of the lead frame. The method of claim 8 , wherein the second region of the etched area is offset by a distance relative to the first region of the etched area. 12 . The method of claim 8 , wherein the second portion of the lead frame corresponds to a second region of the etched area and spans a thickness of the second region of the etched area.

13. The method of claim 8, further comprising: etching a second region within the lead frame; and filling the second etched region with the non-conductive mold compound; The metal burr of the metal material coating located at the same end of the lead frame as the etched area or the second etched area contacts the non-conductive molding compound in the etched area or the second etched area to provide electrical isolation between the lead frame and the silicon die, thereby preventing short circuits.

14. A semiconductor device comprising: a silicon die having a coating of metallic material applied to one side; and A lead frame comprising: a mounting pad having an area smaller than that of the silicon die, the silicon die being mounted on the lead frame via the mounting pad; an etched area filled with a non-conductive molding compound on a side of the lead frame that contacts one end of the silicon die along an edge of the silicon die, and A metal burr of the metallic material coating at the same end of the lead frame as the etched region contacts the non-conductive mold compound in the etched region to provide electrical isolation between the lead frame and the silicon die, thereby preventing short circuits. 15 . The semiconductor device of claim 14 , wherein a first region of the etched area is filled with the non-conductive mold compound, and a second region of the etched area includes a void or another non-conductive mold compound different from the non-conductive mold compound in the first region.

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