Power module and method of manufacturing the same

Abstract

The present disclosure relates to a power module and a manufacturing method thereof. The power module includes a magnetic assembly, a power device, and a lead assembly. The magnetic assembly includes a body, a winding, a first surface, and a second surface. The winding is disposed on the body, and the first surface is opposite to the second surface. The power device is disposed on the magnetic assembly and includes a third surface and a fourth surface. The third surface is opposite to the fourth surface. The lead assembly is disposed on the magnetic assembly and electrically connected to the magnetic assembly and the power device. At least one of the third surface or the fourth surface of the power device is at least partially attached to at least one of the first surface or the second surface of the magnetic assembly, and at least one of the third surface or the fourth surface of the power device is at least partially located within a projection envelope of at least one of the first surface or the second surface of the magnetic assembly, so that the magnetic assembly supports the power device. The power device can be a bare power chip.

Description

Technical Field

[0001] This disclosure relates to a power module, and more particularly to an optimized power module and a method for manufacturing the same. Background Technology

[0002] With the increasing demands for intelligent living, higher requirements for intelligent product manufacturing, and the rise of the Internet of Things (IoT), society's need for information transmission and data processing is growing rapidly. For centralized data processing centers, servers are arguably the most crucial units. The motherboard of such servers typically consists of a central processing unit (CPU), chipsets, memory, and other data processing digital chips, along with their power supply and necessary peripheral components. However, as the processing power per unit volume of servers increases, the number and integration of these digital chips also need to increase, leading to higher space utilization and power consumption. Therefore, the power supply provided to these digital chips (also known as the motherboard power supply because it shares a motherboard with the data processing chips) is expected to have higher efficiency, higher power density, and smaller size to support energy saving and reduced footprint for the entire server and even the entire data center.

[0003] Because the aforementioned digital chips typically require low voltage and high current for power supply, and to reduce output lead losses and impedance effects, a direct power supply is usually installed on the motherboard, as close as possible to the digital chip. Therefore, this type of power supply that directly powers the chip is called a point-of-load (POL) power supply, and its input must be provided by an external power source. Currently, the typical input voltage of a POL power supply on a server motherboard is around 12V.

[0004] On the other hand, for distributed information terminal applications, since the components and digital chips must be integrated into a very small space and operate continuously for a long time, and their power supply usually uses a low operating voltage, typically provided by energy storage devices such as 3V to 5V batteries, the requirements for high efficiency and high power density in the power supply are even more urgent.

[0005] In recent years, switching power supplies have become increasingly widely used due to their superior efficiency compared to linear power supplies. However, compared to linear power supplies, switching power supplies have more complex circuits and often include magnetic components / capacitors for energy storage / filtering, making them less suitable for chip integration.

[0006] Currently, for low-voltage DC / DC conversion applications, buck converter circuits are typically used to output various voltages between 0V and 5V to the corresponding digital chips. For example... Figure 1 The diagram shows a circuit diagram of a buck converter circuit. The buck converter circuit includes an input filter capacitor Cin, a main switch Q1, a freewheeling diode Q2, an inductor L, and an output capacitor Co. The input filter capacitor Cin is connected to a power supply to receive the input voltage Vin. One end of the main switch Q1 is connected to the input filter capacitor Cin, and the other end is connected to the inductor L. The main switch Q1 switches between on and off to adjust the energy transferred from the input to the output and to adjust the output voltage and current. The main switch Q1 is typically a metal-oxide-semiconductor (MOS) field-effect transistor. One end of the freewheeling diode Q2 is connected to a node between the main switch Q1 and the inductor L, and the other end is grounded. The freewheeling diode Q2 provides a path for the inductor L to release energy and provide freewheeling current. The freewheeling diode Q2 can be a diode; however, to reduce losses, it can also be a MOS field-effect transistor with synchronous rectification control to achieve near-ideal diode function. One end of inductor L is connected to the node between the main switch Q1 and the freewheeling diode Q2, and the other end is connected to the output capacitor Co. Inductor L and output capacitor Co work together to filter the square wave output voltage generated by the alternating switching of the main switch Q1 and the freewheeling diode Q2 into an average value, i.e., a DC output voltage Vout. The output capacitor Co is designed to absorb the current ripple output by inductor L, ensuring that the voltage ripple of the output voltage Vout is less than the required value. The output voltage Vout of the buck converter circuit can provide energy to a load RL, such as a digital chip or a central processing unit (CPU).

[0007] To further improve the conversion efficiency and power density of power converters, existing technologies have focused on independent optimization from aspects such as magnetic components, bare power chips, and capacitor components. However, with technological advancements, independent optimization of a single component has gradually reached its limit and can no longer achieve higher efficiency and higher power density.

[0008] Therefore, how to develop a power module to add new space for power supply performance optimization, and further achieve the goals of high efficiency and high power density, in order to solve the problems faced by existing technologies, is a topic that needs to be addressed in this field. Summary of the Invention

[0009] The purpose of this disclosure is to provide a power module and a method for manufacturing the same. By using a structure that carries a bare power chip with a magnetic component, the connection between the magnetic component and the bare power chip can be optimized and integrated, thereby enabling the power module to achieve high efficiency and high power density, effectively reducing the power module's occupation of system motherboard resources, and further improving the competitiveness of the power module product.

[0010] Another objective of this disclosure is to provide a power module and a method for manufacturing the same. The integrated and optimized power module can be adapted to different application requirements, increasing design flexibility, further optimizing the circuit characteristics of the power module, and integrating more functions into the power module.

[0011] Another objective of this disclosure is to provide a power module and a method for manufacturing the same, which simplifies the process of carrying bare power chips with magnetic components by forming a continuous structure, improves production efficiency, and achieves the goal of assembling an optimized power module and reducing its manufacturing cost.

[0012] To achieve the above objectives, this disclosure provides a power module including a magnetic component, a bare power chip, and a conductive component. The magnetic component includes a body, a winding, a first surface, and a second surface. The winding is disposed on the body, and the first surface is opposite to the second surface. The bare power chip is disposed on the magnetic component and includes a third surface and a fourth surface. The third surface is opposite to the fourth surface. The conductive component is disposed on the magnetic component and electrically connected to the magnetic component and the bare power chip. The third or fourth surface of the bare power chip is at least partially attached to the first or second surface of at least one magnetic component, and the third or fourth surface of the bare power chip is at least partially located within the projection envelope of the first or second surface of the magnetic component, so that the magnetic component supports the bare power chip.

[0013] To achieve the above objectives, this disclosure further provides a method for manufacturing a power module, comprising the steps of: (a) providing a plurality of magnetic components, wherein each magnetic component includes a first surface and a second surface, and the first surface is opposite to the second surface; (b) forming at least one first insulating material layer around the plurality of magnetic components, such that the plurality of magnetic components form a continuous sheet, and the first surfaces of the plurality of magnetic components are coplanar or the second surfaces of the plurality of magnetic components are coplanar; (c) providing a plurality of bare power chips, respectively disposed on the plurality of magnetic components, wherein each bare power chip includes a third surface and a fourth surface, the third surface being opposite to the fourth surface, and the bare power chip... The third or fourth surface of the chip is at least partially attached to the first or second surface of the opposing magnetic component, and the third or fourth surface of the bare power chip is at least partially located within the projection envelope of the first or second surface of the opposing magnetic component, so that the opposing magnetic component supports the bare power chip; (d) forming at least one second insulating material layer to cover a plurality of bare power chips; (e) forming a plurality of conductive components on at least one second insulating material layer, respectively electrically connected to a plurality of bare power chips and a plurality of magnetic components; and (f) dividing at least one first insulating material layer and at least one second insulating material layer to obtain a plurality of power modules.

[0014] To achieve the above objectives, this disclosure further provides a method for manufacturing a power module, comprising the steps of: (a) providing an attachment film and a plurality of magnetic components, arranging the plurality of magnetic components on the attachment film to form a continuous sheet, wherein each magnetic component includes a first surface and a second surface, with the first surface opposite to the second surface, and the second surfaces of the plurality of magnetic components are attached to the attachment film; (b) providing a plurality of bare power chips, respectively disposed on the plurality of magnetic components, wherein each bare power chip includes a third surface and a fourth surface, with the third surface opposite to the fourth surface, the third surface or the fourth surface of the bare power chip is attached to the first surface of the opposite magnetic component, and the third surface or the fourth surface of the bare power chip is located within the projection envelope of the first surface of the opposite magnetic component, so that the opposite magnetic component supports the bare power chip; (c) forming at least one first insulating material layer, covering the plurality of magnetic components and the bare power chips; (d) forming a plurality of conductive components on the at least one first insulating material layer, respectively electrically connected to the plurality of bare power chips and the plurality of magnetic components; and (f) separating the at least one first insulating material layer and the attachment layer to obtain a plurality of power modules. Attached Figure Description

[0015] Figure 1 The circuit diagram of a step-down converter circuit is disclosed.

[0016] Figure 2 This is a cross-sectional structural schematic diagram of the power module according to the first preferred embodiment of the present disclosure.

[0017] Figure 3A This is the first preferred embodiment of the magnetic component disclosed herein.

[0018] Figure 3B This is a second preferred embodiment of the magnetic component disclosed herein.

[0019] Figure 3C This is the third preferred embodiment of the magnetic component disclosed herein.

[0020] Figures 4A to 4F This is a schematic diagram of the manufacturing process of the power module according to the first preferred embodiment of the present disclosure.

[0021] Figures 5A to 5G This is a schematic diagram of the manufacturing process of the power module according to the second preferred embodiment of the present disclosure.

[0022] Figures 6A to 6F This is a schematic diagram of the manufacturing process of the power module according to the third preferred embodiment of the present disclosure.

[0023] Figure 7 It is a schematic diagram of a continuous structure composed of multiple magnetic components and devices.

[0024] Figure 8 This is a cross-sectional structural schematic diagram of the power module according to the second preferred embodiment of the present disclosure.

[0025] Figures 9A to 9D This is a schematic diagram of the manufacturing process of the power module according to the fourth preferred embodiment of the present disclosure.

[0026] Figure 10 This is a cross-sectional structural diagram of the power module according to the third preferred embodiment of the present disclosure.

[0027] Figure 11 This is a cross-sectional structural schematic diagram of the power module according to the fourth preferred embodiment of the present disclosure.

[0028] Figure 12 This is a cross-sectional structural schematic diagram of the power module according to the fifth preferred embodiment of the present disclosure.

[0029] Figure 13 This is a cross-sectional structural schematic diagram of the power module according to the sixth preferred embodiment of the present disclosure.

[0030] Figure 14 This is a cross-sectional structural schematic diagram of the power module according to the seventh preferred embodiment of the present disclosure.

[0031] Figure 15 This is a cross-sectional structural diagram of the power module according to the eighth preferred embodiment of the present disclosure.

[0032] Figure 16 This is a cross-sectional structural schematic diagram of the power module according to the ninth preferred embodiment of the present disclosure.

[0033] Figure 17 This is a cross-sectional structural schematic diagram of the power module according to the tenth preferred embodiment of the present disclosure.

[0034] Figure 18 This is a cross-sectional structural schematic diagram of the power module according to the eleventh preferred embodiment of the present disclosure.

[0035] Figure 19 This is a schematic cross-sectional view of the power module according to the twelfth preferred embodiment of the present disclosure.

[0036] Figure 20 This is a cross-sectional structural schematic diagram of the power module according to the thirteenth preferred embodiment of the present disclosure.

[0037] Figure 21 This is a cross-sectional structural schematic diagram of the power module according to the fourteenth preferred embodiment of the present disclosure.

[0038] Figure 22 This is a cross-sectional structural schematic diagram of the power module according to the fifteenth preferred embodiment of the present disclosure.

[0039] Figure 23 This is a schematic cross-sectional view of the power module according to the sixteenth preferred embodiment of the present disclosure.

[0040] Figure 24 This is a schematic cross-sectional view of the power module according to the seventeenth preferred embodiment of the present disclosure.

[0041] Figure 25A This is a demonstrative circuit diagram of a power module in which multiple sets of switching devices are combined with an inductor.

[0042] Figure 25B This is an exemplary circuit diagram of a set of switching devices in conjunction with multiple inductors in the power module disclosed herein.

[0043] Figure 25C This is an exemplary circuit diagram of a power module containing multiple sets of switching devices in conjunction with multiple inductors.

[0044] Explanation of reference numerals in the attached figures:

[0045] 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h, 1k, 1m, 1n, 1p, 1r, 1s, 1t, 1u: Power modules

[0046] 10, 10a, 10b, 10c, 10d, 10e: Magnetic components

[0047] 10f: First magnetic component

[0048] 10g: Second magnetic component

[0049] 11: First Surface

[0050] 11a: Groove

[0051] 12: Second Surface

[0052] 13: Winding

[0053] 13a, 13b: Electrodes

[0054] 14: Ontology

[0055] 15: Guide hole

[0056] 16: Lead-out electrode

[0057] 17: Electrode

[0058] 18: Metallized wiring layer

[0059] 20: Bare power chip

[0060] 20a: First bare power chip

[0061] 20b: Second bare power chip

[0062] 21: Third Surface

[0063] 22: Fourth Surface

[0064] 23: Electrode

[0065] 24: Metal bumps

[0066] 30: Adhesive material layer

[0067] 40: Connector assembly

[0068] 40a: First conductive metallization layer

[0069] 40b: Second conductive metallization layer

[0070] 41: Guide hole

[0071] 42: Metallized wiring layer

[0072] 43, 44, 45: Connecting components

[0073] 46: Wire bonding

[0074] 47: Metallization layer

[0075] 48: Conductive block

[0076] 49: Conductive via

[0077] 50: Adhesive film

[0078] 51: First insulating material layer

[0079] 52: Second insulating material layer

[0080] 53: Third insulating material layer

[0081] 60: Devices

[0082] 61: Surface

[0083] 62: Devices

[0084] 62a: Port

[0085] 63: Electronic Components

[0086] 70: Protective layer

[0087] Cin: Input filter capacitor

[0088] Vin: Input voltage

[0089] Q1: Main switching transistor

[0090] Q2: Freewheeling tube

[0091] L: Inductor

[0092] Co: Output capacitor

[0093] Vout: Output voltage

[0094] RL: Load Detailed Implementation

[0095] Some typical embodiments embodying the features and advantages of this disclosure will be described in detail in the following description. It should be understood that this disclosure can be varied in different implementations without departing from the scope of this disclosure, and the descriptions and drawings therein are for illustrative purposes only and not for limiting the scope of this disclosure.

[0096] Figure 2This is a cross-sectional structural schematic diagram of a power module according to a first preferred embodiment of the present disclosure. The power module 1 includes a magnetic component 10, a bare power chip 20, and a conductive component 40. The magnetic component 10 includes a first surface 11, a second surface 12, and at least one winding 13. The bare power chip 20 includes a third surface 21 and a fourth surface 22. The bare power chip 20 is disposed on the magnetic component 10. In this embodiment, the fourth surface 22 of the bare power chip 20 is fixed to the first surface 11 of the magnetic component 10 by, for example, an adhesive material layer 30, and the fourth surface 22 of the bare power chip 20 is at least partially located within the projected envelope of the first surface 11 of the magnetic component 10. A first insulating material layer 51 is also included around the perimeter of the magnetic component 10, which is covered by, for example but not limited to, molding, to provide environmental protection. In this embodiment, the bare power chip 20 is, for example, a bare power semiconductor chip, further covered by a second insulating material layer 52, and electrically connected to the magnetic component 10 via a conductive component 40. The conductive component 40 may be, for example, a metallization layer structure, including at least two vias 41 and a metallized wiring layer 42, for connecting the pins on the first surface 11 of the magnetic component 10 to the electrodes on the third surface 21 of the bare power chip 20, thereby achieving electrode fan-out of the bare power chip. The at least two vias 41 and the metallized wiring layer 42 can be formed, for example, by forming a semi-via on the second insulating layer 52 and then metallizing it. The width, depth, and thickness of the semi-via opening can be adjusted according to actual application requirements, and this disclosure is not limited thereto. It should be emphasized that, in this embodiment, the bare power chip 20 may include, for example, power semiconductor devices (Si MOSFET, GaN switching components, SiC MOSFET, etc.), and may further integrate driving, control and other functions. Furthermore, the chip may be a single device, a half-bridge circuit, or may include multiple half-bridge circuits, and this disclosure is not limited thereto.

[0097] Please refer to Figure 1 and Figure 2 In this embodiment, the bare power chip 20 may integrate two switching devices, such as a main switch Q1 and a freewheeling diode Q2. The midpoint of the two switching devices Q1 and Q2 is connected to one end of the inductor L through a metallization layer, and the other end of the inductor is Vout, which is directly output. Other terminals on the bare power chip 20, such as Vin, GND, and other drive control electrodes, can also be fanned out through the metallization layer of the conductive component 40, which will not be described in detail here.

[0098] It is worth noting that in the structure of power module 1, since the bare power chip 20 is directly attached to the magnetic component 10, the magnetic component 10 can provide sufficient mechanical strength support for the bare power chip 20, and encapsulation is achieved through the second insulating material layer 52. Compared to a separately packaged power semiconductor device, the bare power chip 20 of this disclosure does not require separate packaging to provide mechanical strength support. Therefore, the bare power chip 20 can, for example, use a thinner bare chip with a thickness of, for example, 200 μm or less, and in a preferred embodiment, a thickness of 100 μm or less. Furthermore, for example, in low-voltage applications (below 100V), the thickness of the second insulating material layer 52 extending beyond the chip surface to meet insulation requirements is typically less than 50 μm. Therefore, the combined structure of power module 1 of this disclosure significantly reduces the footprint of power module 1 by stacking the magnetic component 10 and the bare power chip 20. Furthermore, due to the adoption of an integrated structural design, the thickness of the power module 1 disclosed herein is still maintained at a fairly high level due to the reduction of stacked materials (such as discrete device assembly, soldering layers used for soldering semiconductor devices to the motherboard, etc.) and the reduction of the additional strength required for independent support to ensure the required thickness. This helps to achieve the goal of increasing power density and reducing the footprint.

[0099] In addition, it should be emphasized that in this embodiment, the structure of the magnetic component 10 can be adjusted according to the actual application requirements. The magnetic component 10 can be, for example, an LTCC inductor, a press-fit inductor, or a combined inductor or transformer. Figure 3A This is the first preferred embodiment of the magnetic component disclosed herein. Figure 3B This is a second preferred embodiment of the magnetic component disclosed herein. Figure 3C This is a third preferred embodiment of the magnetic component disclosed herein. For example... Figures 3A to 3C As shown, its structure includes a first surface 11, a second surface 12, at least one winding 13, and a body 14. The at least one winding 13 may be, for example, a single-turn or multi-turn winding formed by a copper busbar, or a single-turn or multi-turn winding made of coils, and is formed on the body 14. The body 14 may be made of a magnetic material such as powder core material or ferrite material. Figure 3A As shown, in the first embodiment, the electrode leads of the magnetic component 10a can be disposed along the sidewall of the body 14 on the first surface 11 of the magnetic component 1a. Figure 3B As shown, in the second embodiment, the electrode leads of the magnetic component 10b can be disposed on the first surface 11 of the magnetic component 10b through the guide hole 15. Furthermore, as... Figure 3CAs shown, the magnetic component 10c is formed on the structure of the body 14 as an integrated inductor or transformer with winding 13 through processes such as drilling and metallization. In other embodiments, the magnetic component 10 may also integrate multiple independent or mutually coupled magnetic component units within a single structure, and this disclosure is not limited thereto. In the power module 1 of the embodiments of this disclosure, only a press-fit inductor with copper busbar winding is described as an example, and the electrodes of the magnetic component 10 are provided on the first surface 11 as an example. Relative to the placement position of the bare power chip 20, the electrodes of the magnetic component 10 may be distributed, for example, on one side, two sides, three sides, or four sides of the bare power chip, and this disclosure is not limited thereto. For a multi-output power module 1, in addition to using, for example, multiple independent magnetic components 10, a combined single magnetic component 10 is more preferred. When the number of electrodes of the magnetic component 10 is large, the electrodes of the magnetic component 10 can not only be distributed on multiple sides of the bare power chip 20, but can also be arranged in multiple rows and columns on the same side of the bare power chip 20. This disclosure is not limited to this, and will not be elaborated further.

[0100] Based on the structure of the power module 1 in the foregoing embodiments, this disclosure also discloses a method for assembling a power module. Figures 4A to 4F This is a schematic diagram of the manufacturing process of the power module according to the first preferred embodiment of this disclosure. Please refer to... Figure 2 and Figures 4A to 4F .

[0101] First, such as Figure 4A As shown, the second surfaces 12 of multiple magnetic components 10 are attached to an adhesion film 50, such that the multiple magnetic components 10 are arranged in an array. Subsequently, as... Figure 4B As shown, a first insulating material layer 51 is used to connect multiple magnetic components 10 into a single sheet, and the first surfaces 11 of the multiple magnetic components 10 are all exposed. The connection process of the first insulating material layer 51 to connect the multiple magnetic components into a single sheet can be transfer molding, sheet molding, dust molding, liquid molding, or potting, etc., and this disclosure is not limited thereto. After the multiple magnetic components form a single sheet, as... Figure 4C As shown, through, for example, an adhesive material layer 30 (reference) Figure 2A bare power chip 20, such as a bare power semiconductor chip, is fixed to the lamination of the magnetic component 10, wherein the fourth surface 22 of the bare power chip 20 is attached to the first surface 11 of the magnetic component 10. The adhesive material layer 30 can be a die attach film, die attach paste, thermal paste, silver paste, etc. Subsequently, as... Figure 4D As shown, a second insulating material layer 52 is disposed on the first surface 11 of the magnetic component 10 on which the bare power chip 20 is disposed, and covers the bare power chip 20. Next, as... Figure 4E As shown, a semi-through hole is formed on the second insulating material layer 52 by, for example, laser direct writing or exposure development, and a conductive hole 41 and a metallized wiring layer 42 are formed in the semi-through hole and on the surface of the second insulating material layer 52, respectively, by a metallization process (see reference). Figure 2 The conductive component 40, constructed as described above, is used to connect the pins of the magnetic component 10 on the first surface 11 and the electrodes of the bare power chip 20 on the third surface 21, thereby achieving electrode fan-out of the bare power chip 20. In this embodiment, the metallization process may involve first forming an initial conductive layer required for electroplating using methods such as sputtering or chemical plating, followed by thickening the layer through electroplating under a mask pattern definition or by etching after thickening the entire surface. This disclosure is not limited to this. Finally, as Figure 4F As shown, the continuous structure is divided into multiple independent power modules 1. Since multiple power modules 1 are produced in a continuous manner, production efficiency is extremely high, effectively meeting capacity requirements and reducing manufacturing costs. In other embodiments, such as... Figure 4B As shown, after forming a series of magnetic components 10 using, for example, transfer molding, a surface leveling process is included to address issues of warpage and excess adhesive after molding, thereby obtaining a good surface for subsequent processes. Furthermore, the first surfaces 11 of the multiple magnetic components 10 are covered by a first insulating material layer 51. In this case, the first insulating material layer 51 can absorb the height difference caused by the manufacturing of the magnetic components, facilitating the application of the insulating material and providing a smooth surface for subsequent processes (such as attaching a chip to the magnetic component series). The portion of the first insulating material layer 51 covering the first surface 11 of the magnetic component 10 is not removed or only partially removed in subsequent processes. In other embodiments, to increase the bonding strength between layers, roughening or activation treatments can be applied to each surface. Additionally, the adhesion film 50 in this embodiment can also be applied after forming the series of magnetic components 10, depending on the actual application requirements (such as...). Figure 4B The present disclosure is not limited to any step shown in the figure, and will not be described in detail hereafter.

[0102] Figures 5A to 5GThis is a schematic diagram of the manufacturing process of the power module according to the second preferred embodiment of this disclosure. In this embodiment, the manufacturing process of the power module 1 is the same as... Figures 4A to 4F The manufacturing process for power module 1 shown is similar, and the same component numbers represent the same components, structures, and functions, which will not be repeated here. Please refer to [link / reference needed]. Figure 2 and Figures 5A to 5G First, as Figure 5A As shown, the first surfaces 11 of multiple magnetic components 10 are attached to an adhesion film 50, such that the multiple magnetic components 10 are arranged in an array, for example. Then, as... Figure 5B As shown, a first insulating material layer 51 is used to connect multiple magnetic components 10 into a continuous structure. Then, as... Figure 5C As shown, the attached film 40 is removed, exposing the first surfaces 11 of the multiple magnetic components 10 on the continuous structure, and the entire continuous sheet is flipped over. Once the multiple magnetic components form a continuous sheet, as... Figure 5D As shown, a bare power chip 20, such as a power semiconductor chip, is fixed to the first surface 11 of the magnetic component 10. Thereafter, as... Figure 5E As shown, a second insulating material layer 52 is disposed on the first surface 11 of the magnetic component 10 on which the bare power chip 20 is disposed, and covers the bare power chip 20. Next, as... Figure 5F As shown, the conductive assembly 40, structured on the second insulating material layer 52, is used to connect the pins of the magnetic assembly 10 on the first surface 11 and the electrodes of the bare power chip 20 on the third surface 21, thereby achieving electrode fan-out of the bare power chip 20. Finally, as... Figure 5G As shown, the continuous structure is divided to form multiple independent power modules 1. In other embodiments, before placing the chip, another insulating layer can be laminated on the side of the magnetic component continuous sheet facing the chip to further smooth the surface of the magnetic component continuous sheet.

[0103] Figures 6A to 6F This is a schematic diagram of the manufacturing process of the power module according to the third preferred embodiment of this disclosure. In this embodiment, the manufacturing process of the power module 1 is the same as... Figures 5A to 5G The manufacturing process for power module 1 shown is similar, and the same component numbers represent the same components, structures, and functions, which will not be repeated here. Please refer to [link / reference needed]. Figure 2 and Figures 6A to 6F Unlike the manufacturing process of power module 1 in the previous embodiments, such as... Figure 6AAs shown, when multiple magnetic components 10 are adhered to the adhesion film 50 with their first surfaces 11, the first surfaces 11 where the pins of the multiple magnetic components 10 are located can be integrated into the same plane through the adhesion film 50. Furthermore, various devices 60 can be arranged at a position horizontal to the magnetic components 10. These devices can be electronic devices (e.g., capacitors, resistors, driver chips, etc.), independent conductive blocks, metal lead frame assemblies, insulating substrate assemblies, circuit boards (e.g., printed circuit boards, insulating metal substrates, ceramic substrates, etc.), etc., and form a continuous structure using a first insulating material layer 51, such as... Figure 6B As shown. The electrode sides of the first surface 11 of the magnetic component 10 and the electrode sides of the remaining devices 60 are attached to the adhesion film 50 and arranged adjacent to each other. Furthermore, Figures 6C to 6F process and Figures 5C to 5F The process is the same and will not be repeated here. It is worth noting that since all the electrodes of the magnetic components 10 and device 60 are on an approximately flat plane, the consistent depth of the semi-through holes during subsequent fan-out with the electrodes of the bare power chip 20 will greatly facilitate the hole-forming process and the wiring layer formation process. When device 60 is an independent conductive block or a metal lead frame connected together, it can control the height, enhance structural strength, provide electrical connection, and enhance thermal performance. When device 60 is an insulating substrate connected together, it can control the height, enhance structural strength, and reduce the amount of the first insulating material layer 51 used. When device 60 is a circuit board, it can simplify the conductive components 40.

[0104] On the other hand, in this embodiment, the height difference of the magnetic components 10 can also be absorbed by the first surface 11 from which the electrodes of the plurality of magnetic components 10 are led out. Figure 7 This is a schematic diagram of a continuous structure composed of multiple magnetic components and devices. As shown in the figure, magnetic components 10d and 10e of different thicknesses are attached to the device 60 on the adhesion film 50 and form a continuous structure through the first insulating material layer 51. The first surface 11 with leads of magnetic component 10d, the first surface 11 with leads of magnetic component 10e, and the surface 61 from which the electrodes of device 60 are led out are all aligned on the same plane through the adhesion film 50. Therefore, when the heights of magnetic components 10d and 10e and device 60 are inconsistent, the tolerance can be absorbed by forming the first insulating material layer 51 with a thicker potting material, without adversely affecting subsequent processes. Of course, this disclosure is not limited to this.

[0105] Figure 8 This is a schematic cross-sectional view of the power module according to the second preferred embodiment of the present disclosure. In this embodiment, the power module 1a and Figure 2The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the bare power chip 20 may, for example, include electrodes with a relatively high thickness (e.g., greater than 30 μm) disposed on the third surface 21. Regarding the structure of the power module 1a, if the manufacturing process described in the aforementioned embodiment is adopted, the process step of forming a semi-through hole in the second insulating material 52 above the bare power chip 20 can be omitted, which is more conducive to improving wiring accuracy. For example, the structure of the power module 1a adopts the following... Figures 6A to 6F During the manufacturing process, in which Figures 6E to 6F The manufacturing process may differ. In this embodiment, since the bare power chip 20 of the power module 1a has a thicker electrode 23, after the second insulating material layer 52 is formed to cover the bare power chip 20 (e.g., Figure 6E As shown, the semi-through-hole structure required for the conductive assembly 40 is formed only on the first surface 11 of the magnetic component 10, which has pins. The electrode 23 of the bare power chip 20 does not require the semi-through-hole structure required for the conductive assembly 40; instead, residue on the surface of the electrode 23 is removed. Since the electrode 23 of the bare power chip 20 has a relatively large height, a flat surface can be quickly obtained using methods such as brushing. A metallization layer is then formed directly on the surface. It is worth noting that the electrodes of the magnetic component 10 are generally large and do not require high positional accuracy, but the bare power chip 20 is small and requires high positional accuracy. However, in the power module 1a of this disclosure, a metallization wiring layer can be formed under the region of the electrode 23 of the bare power chip 20, eliminating the step of forming a semi-through-hole window on the third surface 21 of the bare power chip 20, thus significantly increasing the wiring density of the conductive assembly 40.

[0106] Figures 9A to 9D This is a schematic diagram of the manufacturing process of the power module according to the fourth preferred embodiment of this disclosure. In this embodiment, the manufacturing process of the power module 1 is the same as... Figures 4A to 4F The manufacturing process for power module 1 shown is similar, and the same component numbers represent the same components, structures, and functions, which will not be repeated here. Please refer to [link / reference needed]. Figure 2 and Figures 9A to 9D In this embodiment, as... Figure 9A As shown, when multiple magnetic components 10 are adhered to the adhesion film 50 with their second surfaces 12, the first surfaces 11 where the pins of the multiple magnetic components 10 are located are simultaneously exposed. Then, as... Figure 9B As shown, multiple bare power chips 20 are attached to the first surface 11 of the magnetic component 10 via the fourth surface 22. At this time, the magnetic component 10 provides sufficient mechanical strength support for the bare power chips 20. Then, as... Figure 9C As shown, the magnetic component 10 and the bare power chip 20 are covered by a first insulating material 51. Finally, as... Figure 9DAs shown, the conductive component 40, structured on the first insulating material layer 51, is used to connect the pins of the magnetic component 10 on the first surface 11 and the electrodes of the bare power chip 20 on the third surface 21, thereby realizing the electrode fan-out of the bare power chip 20. Of course, the steps of the aforementioned manufacturing processes can be varied according to actual application requirements, and the process flow of the power module disclosed herein is not limited to the combination of steps in the aforementioned embodiments.

[0107] Furthermore, in the aforementioned embodiments, the magnetic component 10 of the power module 1 is electrically connected to the bare power chip 20 via, for example, a conductive component 40 with a single-layer metallization layer. However, in practical applications, the conductive component 40 is not limited to a single-layer metallization layer structure. Figure 10 This is a schematic cross-sectional view of the power module according to a third preferred embodiment of the present disclosure. In this embodiment, the power module 1b and Figure 2 The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1b further includes a third insulating material layer 53 disposed on the second insulating material layer 52, and the conductive component 40 further includes at least a first conductive metallization layer 40a and at least a second conductive metallization layer 40b, respectively disposed on the second insulating material layer 52 and the third insulating material layer 53, and electrically connected between the first surface 11 of the magnetic component 10 with pins and the third surface 21 of the bare power chip 20 with electrodes. In other embodiments, the conductive component 40 further includes two or more metallization layers to allow for the fan-out distance of the pins for external connections, thereby optimizing circuit impedance and shielding. For example, in one shielding application scenario, for instance, the electrode connected to the bare power chip 20 of the power semiconductor chip and the magnetic component 10, such as an inductor, is at a floating potential but does not require output, i.e., it is connected to the system board. At this point, the first conductive metallization layer 40a adjacent to the magnetic component 10 can be used to interconnect the power semiconductor chip and the magnetic component electrodes. A shielding area is set on the outer layer wiring at the interconnection wiring location. The potential of the shielding area can be floating or connected to a static point (input, output, ground). Of course, this disclosure is not limited to this.

[0108] Figure 11 This is a schematic cross-sectional view of the power module according to the fourth preferred embodiment of the present disclosure. In this embodiment, the power module 1c and... Figure 2The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the magnetic component 10 of the power module 1c can form a redistribution layer on the first surface 11 through a metallization layer, which is used for, for example, leading out the electrode 16, to rearrange the electrode lead-out positions. The redistribution layer can also be used for other wiring functions, such as simplifying the connection of the conductive metallization layer 40. In this embodiment, the pins of the magnetic component 10 are on the periphery of the bare power chip 20. At this time, the redistribution of the magnetic component 10 for the leading out electrode 16 can be used to redefine the lead-out fan-out pattern of the winding 13 of the magnetic component 10 to meet the requirements of subsequent processes (such as adjustment of size, material, and thickness).

[0109] Figure 12 This is a schematic cross-sectional view of a power module according to a fifth preferred embodiment of the present disclosure. In this embodiment, the power module 1d and... Figure 11 The power module 1c shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the winding 13 lead-out end of the magnetic component 10 of the power module 1d is located below the fourth surface 22 of the bare power chip 20, that is, it overlaps with the bare power chip 20, and even one side of the bare power chip 20 extends beyond the magnetic component 10. In this case, a lead electrode 16 of the magnetic component 10 can be formed by metallization layer, so as to fan out the lead electrode of the magnetic component 10 through rewiring, so as to realize the electrical interconnection between the electrode of the magnetic component 10 and the bare power chip 20. It should be emphasized that the position of the bare power chip 20 relative to the magnetic component 10 in this disclosure is at least partially overlapping to reduce the footprint of the power module 1d. The bare power chip 20 may, for example, be completely within the projection envelope of the magnetic component 10, or extend beyond it on one or more sides but be partially located within the projection envelope of the magnetic component 10. The portion of the bare power chip 20 that extends beyond the projection envelope of the magnetic component 10 can be provided with mechanical strength support, for example, through the first insulating material layer 51. That is, the bare power chip 20 is located within the common projection envelope of the magnetic component 10 and the first insulating material layer 51. Of course, this disclosure is not limited thereto, and will not be elaborated further.

[0110] Figure 13 This is a schematic cross-sectional view of the power module according to the sixth preferred embodiment of the present disclosure. In this embodiment, the power module 1e and Figure 2The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1e also includes a first bare power chip 20a and a second bare power chip 20b, so that multiple bare power chips can be mounted in a single module. In this embodiment, the first bare power chip 20a and the second bare power chip 20b may be, for example, power semiconductor chips, driver chips, or control chips. In other embodiments, the first bare power chip 20a and the second bare power chip 20b may also include, for example, passive components, such as resistors, capacitors, and other electronic components. It should be emphasized that the size, number, and position of the first bare power chip 20a and the second bare power chip 20b can be adjusted according to the actual application requirements, and this disclosure is not limited thereto.

[0111] Figure 14 This is a schematic cross-sectional view of the power module according to the seventh preferred embodiment of the present disclosure. In this embodiment, the power module 1f and Figure 13 The power module 1e shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1f includes a first bare power chip 20a and a second bare power chip 20b with different thicknesses, wherein the second bare power chip 20b is thicker than the first bare power chip 20a. To accommodate the first bare power chip 20a and the second bare power chip 20b with different thicknesses, the magnetic component 10 also includes a groove 11a structure disposed on the first surface 11. When the second bare power chip 20b is attached to the first surface 11 of the magnetic component 10, the groove 11a partially accommodates the second bare power chip 20b to absorb the height difference between the second bare power chip 20b and the first bare power chip 20a. It should be emphasized that the size, number, and position of the groove 11a can be adjusted according to the actual application requirements, and this disclosure is not limited thereto.

[0112] Figure 15 This is a schematic cross-sectional view of the power module according to the eighth preferred embodiment of the present disclosure. In this embodiment, the power module 1g and Figure 2The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1g also includes a first magnetic component 10a and a second magnetic component 10b, so that multiple magnetic components can be mounted in a single module. In this embodiment, the first magnetic component 10a has at least two electrodes 13a, and the second magnetic component 10b has at least two electrodes 13b, wherein electrodes 13a and 13b are both disposed in the area not covered by the bare power chip 20, that is, they do not overlap with the fourth surface 22 of the bare power chip 20. In other embodiments, multiple magnetic component units are further integrated in the same first magnetic component 10a or second magnetic component 10b, that is, multiple inductor and transformer units are integrated, respectively corresponding to, for example, the input and output electrodes 13a and 13b. In this embodiment, the fan-out position of electrodes 13a and 13b is preferably disposed in the area not covered by the bare power chip 20. Of course, in other embodiments, the fan-out position can also be redefined by adding an additional metallization layer to the first surface 11 of the magnetic component 10 as described above. It should be emphasized that, as can be seen from the description of the foregoing embodiments, the power module 1 of this disclosure can integrate multiple magnetic components 10 and multiple bare power chips 20 in a single stack structure, which will not be described again here.

[0113] Figure 16 This is a schematic cross-sectional view of the power module according to the ninth preferred embodiment of the present disclosure. In this embodiment, the power module 1h and Figure 2 The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1h also includes a device 62, which is covered by a first insulating material layer 51 and is horizontally arranged with the magnetic component 10. The device 62 may be, for example, a resistor, capacitor, driver chip, or other device. In this embodiment, the device 62 is more specifically a resistor / capacitor component with two ports 62a, which is horizontally arranged with the magnetic component 10, that is, the surfaces where the two ports 62 of the device 62 are located are coplanar with the first surface 11 where the pins of the magnetic component 10 are located. Of course, this disclosure is not limited thereto.

[0114] Figure 17 This is a schematic cross-sectional view of a power module according to a tenth preferred embodiment of the present disclosure. In this embodiment, the power module 1k and Figure 2The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1k is more, for example, a typical buck circuit, including an electronic device 63 as input and output capacitors, etc. In order to further reduce the footprint of the power module, the electronic device 63, such as a capacitor, can be further stacked in the thickness direction of the bare power chip 20 and the magnetic component 10, and by providing a connection component 43, it is ensured that the height between the electrodes of the power module 1k and the system motherboard (not shown) is greater than or equal to the height of the electronic device 63. In one embodiment, the connection component 43 can be a solder ball (such as a coreless solder ball or a cored solder ball, the shape of which is not limited to a sphere and can also be cylindrical, polyhedral, ellipsoidal, etc.). In this embodiment, the connection component 43 is more, for example, a metal (such as copper) core solder ball to ensure height. On the other hand, in order to ensure a small increase in height, the electronic device 63 is typically, for example, a silicon-based chip capacitor or an ultra-thin multilayer ceramic capacitor, as shown in the figure, but this disclosure is not limited thereto.

[0115] Figure 18 This is a schematic cross-sectional view of the power module according to the eleventh preferred embodiment of this disclosure. In this embodiment, the power module 1m and Figure 17The power modules k shown are similar, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the fourth surface 22 of the bare power chip 20 of the power module 1m is directly fixed to the first surface 11 of the magnetic component 11 by the adhesive material 30. The electrodes 17 on the first surface 11 of the magnetic component 10 and the electrodes on the third surface of the bare power chip 20 are directly connected to the system motherboard (not shown) through the connecting parts 44 and 45, respectively, and the bare power chip 20 and the magnetic component 10 are interconnected on the system motherboard. The height of the connecting part 44 usually needs to be higher than the height of the connecting part 45 so that the height of all connecting parts and the surfaces connected to the system board tends to be flat. In addition to using ordinary solder balls, the connecting parts 44 and 45 can also use solder balls with cores (such as metal cores, resin cores, etc.). In this embodiment, the connecting part 44 connected to the magnetic component 10 can be a solder ball with a metal (such as copper) core to provide the function of ensuring installation height and increasing conductivity. The connection component 45 connected to the bare power chip 20 can use ordinary coreless solder balls. It should be noted that when there are multiple connection components 44 within the device, only some (such as the outermost corners on all four sides) may have a metal core. Furthermore, the shape of the connection components 44 and 45 is not limited to spherical; they can also be, for example, cylindrical, polyhedral, or ellipsoidal. Additionally, the electrodes 17 of the magnetic component 10 can be led out in situ from the pin positions of the magnetic component 10 itself, or they can be secondary-distributed on the first surface 11 of the magnetic component 10 through a metallization layer process. Besides enabling the redistribution of pin positions, this metallization layer can further integrate other wiring functions and accommodate components such as input / output capacitors and resistors. It should be emphasized that this metallization layer is not limited to one layer and can also be multiple layers. The layers are electrically isolated from each other through insulating layers, and multiple metallization layers can be connected through vias. In addition to wiring functions, multiple metallization layers can also be used for EMI shielding and other technical effects; this disclosure is not limited to this and will not be elaborated further. In short, the manufacturing of the power module 1m can also be achieved through the following steps. First, multiple bare power chips 20 are fixed onto a carrier (not shown), and the bare power chips 20 are fixed onto the magnetic component 10 by an adhesive material layer 30, such as an organic adhesive or solder. Connecting components 44 and 45 are formed on the electrodes 17 on the first surface 11 of the magnetic component 10 and the electrodes on the third surface 21 of the bare power chips 20, respectively, using a ball-mounting technique. Finally, the carrier is removed to obtain an independent power module 1m. In one embodiment, the connecting components 45 on the bare power chips 20 may be, for example, pre-placed solder balls, and only the connecting components 44 need to be provided on the magnetic component 10 when manufacturing the power module 1m.In other embodiments, the connecting component 44 may also be pre-placed on the magnetic component 10, and the connecting component 45 may also be pre-placed on the bare power chip 20, thus eliminating the need for ball-planting during the power module 1m assembly process. This disclosure is not limited thereto.

[0116] It is worth noting that in the structure of the power module 1m, since the bare power chip 20 is directly fixed to the first surface 11 of the magnetic component 10 through the adhesive material layer 30, and the magnetic component 10 provides sufficient mechanical strength support, the bare power chip 20 can be selected from chips with lower requirements for structural strength, for example. In one embodiment, the bare power chip 20 may be, for example, a semiconductor chip with a bare die package, and its thickness can be reduced to a certain thickness, for example, 200 μm or less. In other embodiments, the thickness of the bare power chip 20 can also be controlled to 100 μm or less. Since the electrodes of the bare power chip 20 can be directly fanned out to the system motherboard (not shown), for example, through the connecting component 45, and since the center distance between adjacent electrodes of the bare power chip 20 generally needs to meet a certain flicker distance, for example, more than 200 μm, in order to meet the requirements of system assembly, in one embodiment, the electrodes are further arranged in a planar array, which can meet the requirements of the number of pins while also increasing the flicker distance between the electrodes, further facilitating manufacturing.

[0117] Figure 19 This is a schematic cross-sectional view of the power module according to the twelfth preferred embodiment of this disclosure. In this embodiment, the power module 1n and Figure 17 The power modules k shown are similar, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the magnetic component 10 and the bare power chip 20 of the power module 1n are connected to the system motherboard (not shown) via connecting component 44 and connecting component 45, respectively. The magnetic component 10 and the bare power chip 20 are further electrically connected to each other via a wire bond 46. Of course, the bonding wire 46 can be further protected by potting or molding. However, this disclosure is not limited to this.

[0118] Figure 20 This is a schematic cross-sectional view of the power module according to the thirteenth preferred embodiment of this disclosure. In this embodiment, the power module 1p and Figure 2The power module 1 shown is similar to the one shown, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1p further has a double-sided fan-out pin structure. The magnetic component 10 can also have at least one or more metallization layers 47 as fan-out pins on the first surface 11 on which the bare power chip 20 is disposed, i.e., the second surface 12 of the magnetic component 10. The conductive component 40 on the first surface 11 and the metallization layer 47 on the second surface are interconnected through a pre-placed conductive block 48. Of course, in other embodiments, the conductive block 48 can also be implemented by means of through-hole electroplating, etc., and this disclosure is not limited to this. Through the double-sided fan-out pin structure, the power module 1p can be connected to the system motherboard (not shown) through the second surface 12. At this time, a heat sink (not shown) can be mounted on the top of the first surface 11 to dissipate the heat generated by the power module 1p, thereby reducing the operating temperature of the power module 1p and improving the performance and reliability of the power module 1p. Of course, in other embodiments, resistors, capacitors, drivers, controllers, and other devices are also mounted on the top of the first surface 11 to further expand the module's functionality. Alternatively, multiple power modules 1p may be mounted to further expand the power output.

[0119] Figure 21 This is a schematic cross-sectional view of the power module according to the fourteenth preferred embodiment of this disclosure. In this embodiment, the power module 1r and Figure 19 The power module 1p shown is similar, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1r also has a double-sided fan-out pin structure. However, unlike... Figure 20 In the power module 1p, the bare power chip 20 is disposed on the second surface 12 of the magnetic component 10, while the leads of the magnetic component 10 are disposed on the first surface, away from the second surface 12 where the bare power chip 20 is disposed. The electrodes of the bare power chip 20 can be interconnected with the magnetic component 10 by connecting, for example, a conductive component 40, a conductive block 48, and a metallization layer 47. In addition, in this embodiment, the electrodes connecting the power module 1r to the system motherboard (not shown) can be disposed adjacent to the first surface 11 or adjacent to the second surface 12. In other words, by disposing the conductive component 40 and the metallization layer 47 on the first surface 11 side and the second surface side of the magnetic component 10 respectively, and electrically connecting them to each other through the conductive block 58 passing through the first insulating material layer 51, the application requirements of double-sided fan-out pins can be realized. It should be emphasized that the application of the bare power chip 20 and the magnetic component 10 of the power module 1 of this disclosure can be adjusted according to actual application requirements, and is not limited thereto.

[0120] Figure 22 This is a schematic cross-sectional view of the power module according to the fifteenth preferred embodiment of this disclosure. In this embodiment, the power module 1s and Figure 2 The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1s further includes at least one metallized wiring layer 18 disposed on the first surface 11 of the magnetic component 10. In another embodiment, the metallized wiring layer 18 is further disposed on the plane jointly constructed by the magnetic component 10 and the first insulating material layer 51. In other embodiments, the metallized wiring layer 18 is more, for example, a multilayer structure, and this disclosure is not limited thereto. In addition, in this embodiment, the bare power chip 20 is more, for example, a flip-chip power semiconductor chip, and the bare power chip 20 also includes a metal bump 24, for example, copper, disposed on the flip-chip third surface 21. The bare power chip 20 achieves electrical connection with the magnetic component 10 through the flip-chip metal bump 24 and the metallized wiring layer 18. The bonding material (such as solder) between the metal bump 24 and the metallized wiring layer 18 is not shown in the figure. It is worth noting that, in this embodiment, to increase structural reliability, the flip-chip bare power chip 20 is connected via, for example, metal bumps 24, which reduces the risk of reliability issues arising from solder volume. Simultaneously, the gap between the third surface 21 of the bare power chip 20 and the metallized wiring layer 18 can be protected by underfill, or this gap can be directly filled with the second insulating material layer 52. The electrodes of the power module 1s are connected to the metallized wiring layer 18 on the magnetic component 10 via, for example, conductive vias 49. It should be emphasized that, in this embodiment, the connection paths of the electrodes connected to the bare power chip 20 and the magnetic component 10 can be set relatively close to reduce transmission impedance. Furthermore, the requirements for the fan-out position of the electrodes of the magnetic component 10 are reduced, increasing the ease of manufacturing the magnetic component 10.

[0121] Figure 23 This is a schematic cross-sectional view of the power module according to the sixteenth preferred embodiment of this disclosure. In this embodiment, the power module 1t and Figure 2 The power module shown is similar to Module 1, and the same component labels represent the same components, structures, and functions, which will not be described again here. Compared to Figure 2 In this embodiment, the power module 1t further omits the first insulating material layer 51 on the sidewall of the magnetic component 10 (see [link]). Figure 2 ), wherein the first insulating material layer 51 may be, for example, in Figure 5G The process of segmenting the continuous structure shown is simultaneously removed to further reduce the footprint of the power module 1t, such as... Figure 23As shown. In other embodiments, the power module 1t may first use a laminate of a magnetic component 10 (not shown) as a substrate, wherein the laminate of the magnetic component 10 is, for example, made of the same magnetic material as the body 14, and integrates the required winding 13 internally or forms the required winding 13 on the surface using a metallization process. Then, the corresponding bare power chip 20 is attached to the laminate of the magnetic component 13, a second insulating material layer 52 is laminated, and a conductive component 40 is formed through semi-through holes and metallized wiring. Finally, it is cut and separated into multiple power modules 1t. However, this disclosure is not limited to this.

[0122] Figure 24 This is a schematic cross-sectional view of the power module according to the seventeenth preferred embodiment of this disclosure. In this embodiment, the power module 1u and... Figure 2 The power module 1u shown is similar to the one described above, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1u also includes a protective layer 70 disposed on the second surface 12 of the magnetic component 10. The material of the protective layer 70 may be the same as or different from that of the first insulating material layer 51 or the second insulating material layer 52. This disclosure is not limited thereto, and will not be described again. In one embodiment, the protective layer 70 is further made of... Figures 4A to 4F The power module manufacturing process shown is constituted by the attached film 50, but this disclosure is not limited thereto.

[0123] As can be seen from the foregoing descriptions, the power module 1 disclosed herein can be widely varied to meet specific application requirements. Taking a typical buck circuit as an example, the power module 1 disclosed herein can have similar... Figures 25A to 25C The circuit variation shown is, for example, multiple sets of switching devices combined with an inductor (such as...). Figure 25A As shown), a set of switching devices are used in conjunction with multiple inductors (such as... Figure 25B As shown), or multiple sets of switching devices combined with multiple inductors (such as... Figure 25C (As shown). This invention can be achieved by slightly modifying the structural design and circuit diagram of the power module. In the case of multiple inductors, the diagram can also be designed to represent multiple independent inductors or coupled inductors; however, this disclosure is not limited to these limitations.

[0124] In summary, this disclosure provides a power module and its manufacturing method. The power module utilizes a structure where a bare power chip is carried by a magnetic component. This optimizes and integrates the connection between the magnetic component and the bare power chip, enabling the power module to achieve high efficiency and high power density. This effectively reduces the power module's resource footprint on the system motherboard, further enhancing the competitiveness of the power module product. Furthermore, the integrated and optimized power module can be adapted to different application requirements, increasing design flexibility and further optimizing the circuit characteristics of the power module, while integrating more functions into the power module. Moreover, the manufacturing method of the power module simplifies the process of carrying the bare power chip with the magnetic component by forming a continuous structure, improving production efficiency and achieving the goal of assembling an optimized power module and reducing its manufacturing cost.

[0125] This disclosure can be modified by those skilled in the art without departing from the scope of protection claimed in the claims of this disclosure.

Claims

1. A power module comprising: At least one magnetic component includes a body, at least one winding, a first surface and a second surface, wherein the winding is at least partially embedded in the body and the first surface is opposite to the second surface; At least one bare power chip is disposed on the at least one magnetic component, and includes a third surface and a fourth surface, wherein the third surface is relative to the fourth surface, and At least one conductive component is disposed on the at least one magnetic component and electrically connected to the at least one magnetic component and the at least one bare power chip. The third or fourth surface of the at least one bare power chip is at least partially attached to the first or second surface of the at least one magnetic component, and the third or fourth surface of the at least one bare power chip is at least partially located within the projection envelope of the first or second surface of the at least one magnetic component, so that the at least one magnetic component supports the at least one bare power chip. The at least one winding includes two vertically arranged leads that extend from one of the first surface and the second surface, and the at least one bare power chip is correspondingly disposed on the first or second surface from which the two leads extend.

2. The power module of claim 1 further includes a first insulating material layer disposed on at least one sidewall of the magnetic component or on the first surface or the second surface of the magnetic component, wherein the third surface or the fourth surface of the at least one bare power chip is located within the projection envelope of the magnetic component and the first insulating material layer, so that the at least one magnetic component and the first insulating material layer support the at least one bare power chip.

3. The power module of claim 2 further includes at least two magnetic components, wherein the first surface of the at least two magnetic components or the second surface of the at least two magnetic components is coplanar.

4. The power module of claim 2 further includes at least one device encapsulated within the first insulating material layer, wherein at least one plane of the at least one device is coplanar with the first surface or the second surface of the magnetic component.

5. The power module of claim 1 further includes an adhesive layer disposed between the at least one bare power chip and the at least one magnetic component, such that the third surface or the fourth surface of the at least one bare power chip is at least partially attached to the first surface or the second surface of the at least one magnetic component.

6. The power module of claim 1 further includes a second insulating material layer disposed on the first surface or the second surface of the magnetic component and covering the at least one bare power chip.

7. The power module of claim 6, wherein the at least one conductive component includes at least one conductive hole and at least one first metallized wiring layer, the at least one first metallized wiring layer is disposed on the second insulating material layer, and the at least one conductive hole connects the at least one first metallized wiring layer to the third surface or the fourth surface of the bare power chip or the first surface or the second surface of the at least one magnetic component.

8. The power module of claim 7 further includes a third insulating material layer disposed on the second insulating material layer, wherein the conductive component further includes at least one second conductive metallization layer disposed on the third insulating material layer and electrically connected to each other, wherein the at least one bare power chip and the at least one magnetic component are electrically connected through the at least one first conductive metallization layer.

9. The power module of claim 7, wherein the at least one bare power chip includes at least one electrode disposed on the third surface or the fourth surface and electrically connected to the at least one magnetic component via the at least one conductive component.

10. The power module of claim 7, wherein the at least one magnetic component includes at least one lead electrode disposed on the first surface or the second surface and electrically connected to the at least one bare power chip via the at least one conductive component.

11. The power module of claim 4, wherein the at least one magnetic component includes at least one groove disposed on the first surface or the second surface, and when the at least one bare power chip or the at least one device is attached to the at least one magnetic component, it partially accommodates the at least one bare power chip or the at least one device.

12. The power module of claim 1, further comprising at least one device and at least one solder ball, wherein the at least one device is disposed above the magnetic component and connected to the at least one bare power chip and the at least one magnetic component via the at least one conductive component, and the at least one solder ball is disposed on the at least one conductive component, located on one side of the at least one device, and the height of the at least one solder ball is greater than or equal to the height of the at least one device.

13. The power module of claim 1, wherein the at least one conductive component comprises at least one solder ball electrically connected to the at least one bare power chip or at least one magnetic component.

14. The power module of claim 1, wherein the at least one conductive component includes a wire bond electrically connected between the at least one bare power chip and the at least one magnetic component.

15. The power module of claim 1, wherein the at least one conductive component includes at least two metallization layers and at least one conductive block, the at least two metallization layers are respectively disposed on the first surface side and the second surface side of the at least one magnetic component, and the conductive block passes through the at least one first insulating material layer and is electrically connected between the at least two metallization layers.

16. The power module of claim 15, wherein the bare power chip is electrically connected to the at least one winding through one of the two metallization layers and electrically connected to the other of the two metallization layers through the conductive block.

17. The power module of claim 15, wherein the bare power chip is electrically connected to the at least one winding via the two metallization layers and the conductive block.

18. The power module of claim 1, wherein the at least one bare power chip comprises a flip-chip power semiconductor chip.

19. The power module of claim 1, further comprising a protective layer disposed on another surface of the at least one magnetic component relative to the first surface or the second surface on which the at least one bare power chip is attached in the magnetic component.

20. A method for manufacturing a power module, comprising the steps of: (a) Provide a plurality of magnetic components, wherein the magnetic components include a first surface and a second surface, and the first surface is opposite to the second surface, wherein the plurality of magnetic components each include a winding and a body, the winding includes two vertically arranged leads, and the two leads are led out from one of the first surface and the second surface, wherein the winding is at least partially embedded in the body; (b) Form at least one first insulating material layer around the plurality of magnetic components, so that the plurality of magnetic components form a continuous sheet, and the first surface of the plurality of magnetic components is coplanar or the second surface of the plurality of magnetic components is coplanar. (c) Provide a plurality of bare power chips, respectively disposed on the first surface or the second surface of the two leads on the plurality of magnetic components, wherein the bare power chip includes a third surface and a fourth surface, the third surface is at least partially attached to the first surface or the second surface of the opposite magnetic component relative to the fourth surface, and the third surface or the fourth surface of the bare power chip is at least partially located within the projection envelope of the first surface or the second surface of the opposite magnetic component, so that the opposite magnetic component supports the bare power chip; (d) Form at least one second insulating material layer to cover the plurality of bare power chips; (e) Forming a plurality of conductive components on the at least one second insulating material layer, respectively electrically connecting to the plurality of bare power chips and the plurality of magnetic components; and (f) Divide the at least one first insulating material layer and the at least one second insulating material layer to obtain a plurality of the power modules.

21. The method of manufacturing a power module as claimed in claim 20, wherein in step (c), the bare power chip is attached to the corresponding magnetic component by an adhesive material layer.

22. The method of manufacturing a power module as claimed in claim 20, wherein step (a) further includes step (a0) providing an attachment film and arranging the plurality of magnetic components on the attachment film.

23. The method of manufacturing a power module as claimed in claim 22, wherein the attached film is a protective film.

24. The method of manufacturing a power module as claimed in claim 20, wherein step (a) further includes step (a1) providing an attachment film, arranging the plurality of magnetic components on the attachment film, wherein the first surface or the second surface of the plurality of magnetic components is coplanar and attached to the attachment film, wherein step (b) further includes step (b1) removing the attachment film after the plurality of magnetic components form the sheet through the at least one insulating material layer.

25. The method of manufacturing a power module as claimed in claim 24, wherein in step (a1), the attached film is located below the plurality of magnetic components, and wherein step (b) further includes step (b2), flipping the connecting piece.

26. The method of manufacturing a power module as claimed in claim 25, wherein step (a) further includes step (a2) providing at least one device arranged on the attachment film along with the plurality of magnetic components, and a surface of the at least one device is coplanar with the first surface of the plurality of magnetic components or the second surface of the plurality of magnetic components.

27. The method of manufacturing a power module as claimed in claim 20, wherein the conductive component includes at least one via and at least one metallized wiring layer, the at least one metallized wiring layer is disposed on the second insulating material layer, and the at least one via connects the at least one metallized wiring layer to the bare power chip or the magnetic component.

28. The method of manufacturing a power module as claimed in claim 20, wherein the conductive component includes at least one first conductive metallization layer, and step (e) further includes step (e1) forming a third insulating material layer on the second insulating material layer, and (e2) forming at least one second conductive metallization layer disposed on the third insulating material layer, wherein the at least one first conductive metallization layer and the at least one second conductive metallization layer are electrically connected to each other, and wherein the bare power chip and the corresponding magnetic component are electrically connected through the at least one first conductive metallization layer.

29. A method for manufacturing a power module, comprising the steps of: (a) An attachment film and a plurality of magnetic components are provided, wherein the plurality of magnetic components are arranged on the attachment film to form a continuous sheet, wherein the magnetic components include a first surface and a second surface, and the first surface is opposite to the second surface, wherein the first surface of the plurality of magnetic components is attached to the attachment film, wherein the plurality of magnetic components each include a winding and a body, the winding includes two vertically arranged leads, and the two leads extend out of the first surface, wherein the winding is at least partially embedded in the body; (b) Provide a plurality of bare power chips, which are respectively disposed on the plurality of magnetic components, wherein the bare power chip includes a third surface and a fourth surface, the third surface is opposite to the fourth surface, the third surface or the fourth surface of the bare power chip is attached to the first surface led out by the two leads of the opposite magnetic component, and the third surface or the fourth surface of the bare power chip is located within the projection envelope of the first surface of the opposite magnetic component, so that the opposite magnetic component supports the bare power chip; (c) Forming at least one first insulating material layer to cover the plurality of magnetic components and the plurality of bare power chips; (d) Forming a plurality of conductive components on the at least one first insulating material layer, respectively electrically connecting to the plurality of bare power chips and the plurality of magnetic components; and (e) Separate the at least one first insulating material layer from the attached film to obtain a plurality of the power modules.

30. The method of manufacturing a power module as claimed in claim 29, wherein in step (b), the bare power chip is attached to the corresponding magnetic component by an adhesive material layer.

31. A power module comprising: At least one magnetic component includes a body, at least one winding, a first surface and a second surface, wherein the winding is at least partially embedded in the body and the first surface is opposite to the second surface; At least one bare power chip is disposed on the at least one magnetic component, and includes a third surface and a fourth surface, wherein the third surface is relative to the fourth surface, and At least two connecting components are electrically connected to the at least one bare power chip device and the at least one magnetic component, respectively, wherein the height of the connecting component connected to the bare power chip is less than the height of the connecting component connected to the magnetic component. The third or fourth surface of the at least one bare power chip is at least partially attached to the first or second surface of the at least one magnetic component, and the third or fourth surface of the at least one bare power chip is at least partially located within the projection envelope of the first or second surface of the at least one magnetic component, so that the at least one magnetic component supports the at least one bare power chip. The at least one winding includes two vertically arranged leads that extend from one of the first surface and the second surface, and the at least one bare power chip is correspondingly disposed on the first or second surface from which the two leads extend.

32. A method for manufacturing a power module, comprising the steps of: (a) An attachment film and a plurality of magnetic components are provided, wherein the plurality of magnetic components are arranged on the attachment film to form a continuous sheet, wherein the magnetic components include a first surface and a second surface, and the first surface is opposite to the second surface, wherein the first surface of the plurality of magnetic components is attached to the attachment film, wherein the plurality of magnetic components each include a winding and a body, the winding includes two vertically arranged leads, and the two leads extend out of the first surface, wherein the winding is at least partially embedded in the body; (b) Provide a plurality of bare power chips, which are respectively disposed on the plurality of magnetic components, wherein the bare power chip includes a third surface and a fourth surface, the third surface is opposite to the fourth surface, the third surface or the fourth surface of the bare power chip is attached to the first surface led out by the two leads of the opposite magnetic component, and the third surface or the fourth surface of the bare power chip is located within the projection envelope of the first surface of the opposite magnetic component, so that the opposite magnetic component supports the bare power chip; (c) Providing a plurality of connection components electrically connected to at least one bare power chip device and the at least one magnetic component, respectively; and (d) Segment the attached membrane to obtain multiple power modules.

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