Multi-clamp structure for die bonding

Abstract

A multi-clamp structure (100) includes a first clamp (110) for die bonding and second clamps (120, 130) for die bonding. The multi-clamp structure (100) further includes a retaining band (150) fixed to the first clamp (110) and the second clamps (120, 130) to hold the first clamp (110) and the second clamps (120, 130) together.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor device packaging, and particularly to techniques for attaching clips to a die. Background Art

[0002] Encapsulating a die in a semiconductor device typically requires connecting electrical terminals to the die. Wire bonding, tape bonding, and clip bonding are viable options for die bonding. Sometimes wire bonding and clip bonding are combined in a single package to benefit from the distinguishing features of these techniques. While clip bonding allows for low resistance and thermal resistance, wire bonding is easy to automate and has a low manufacturing cost.

[0003] Clip bonding requires precise placement of the clip on the die and alignment with the contact to be connected. Clip misalignment or non-alignment may affect the performance of the device or may result in defective components. Summary of the Invention

[0004] A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. In addition, the multi-clip structure further includes a retaining band fixed to the first clip and the second clip to hold the first clip and the second clip together.

[0005] A semiconductor device package includes a die carrier and a die mounted on the die carrier. The semiconductor device package further includes a first clip bonded to a first electrode of the die and a second clip bonded to the first electrode or a second electrode of the die. A molding compound encapsulates the die, the first clip, and the second clip, wherein the first clip and the second clip are cast in situ by the molding compound and are completely encapsulated by the molding compound.

[0006] A method of attaching a multi-clip structure to a die includes providing a multi-clip structure that includes a first clip for die bonding, a second clip for die bonding, and a retaining band fixed to the first clip and the second clip to hold the first clip and the second clip together. The multi-clip structure is placed on the die as a single component.

[0007] A method of manufacturing a semiconductor device package includes: placing a die on a die carrier; placing a multi-clip structure on the die as a single component, wherein the multi-clip structure includes a first clip for die bonding, a second clip for die bonding, and a retaining band fixed to the first clip and the second clip to hold the first clip and the second clip together; attaching the multi-clip structure to the die and external terminals of the semiconductor device package; and encapsulating the die and the multi-clip structure by cavity molding. Brief Description of the Drawings

[0008] The accompanying drawings are included to provide a further understanding of the embodiments, and are incorporated in and constitute a part of this specification. The drawings illustrate the embodiments and, together with the description, serve to explain the principles of the embodiments. Other embodiments and many of the intended advantages of the embodiments can be readily understood by reference to the following detailed description, as the drawings can render these more comprehensible. The elements of the drawings are not necessarily drawn to scale relative to each other. Like reference numerals designate corresponding like parts.

[0009] Figure 1 is a top perspective view of an exemplary multi-clamp structure.

[0010] Figure 2 is Figure 1 a bottom perspective view of the exemplary multi-clamp structure.

[0011] Figure 3 is a partial perspective view of an exemplary semiconductor device package that includes Figure 1 and 2 the exemplary multi-clamp structure attached to a die and external terminals of the semiconductor device package.

[0012] Figure 4 is Figure 3 another partial perspective view of the exemplary semiconductor device package.

[0013] Figure 5 is a partial side view of the exemplary semiconductor device package viewed from position B of Figure 4 the semiconductor device package.

[0014] Figure 6 is a partial cross-sectional view of the exemplary semiconductor device package taken along line A-A of Figure 4 the semiconductor device package.

[0015] Figure 7 is a flowchart showing an example of a method of manufacturing a multi-clamp structure.

[0016] Figure 8 is a flowchart showing an example of a method of attaching a multi-clamp structure to a die.

[0017] Figure 9 is a flowchart showing an example of a method of manufacturing a semiconductor device package. Detailed Description

[0018] It should be understood that the features of the various exemplary embodiments and examples described herein may be combined with each other unless otherwise specifically stated.

[0019] As used in this specification, the terms "bonding", "attaching", "connecting", "coupling", and / or "electrically connecting / electrically coupling" do not mean that the elements or layers must be in direct contact with each other; rather, intermediate elements or layers may be provided between the elements that are "bonded", "attached", "connected", "coupled", and / or "electrically connected / electrically coupled", respectively. However, according to the present disclosure, the above terms may also optionally have a specific meaning, i.e., the elements or layers are in direct contact with each other, i.e., no intermediate elements or layers are provided between the elements that are "bonded", "attached", "connected", "coupled", and / or "electrically connected / electrically coupled", respectively.

[0020] In addition, the term "on" used with respect to forming or positioning a component, element, or layer of material "on" a surface may be used herein to mean that the component, element, or layer of material is positioned (e.g., placed, formed, deposited, etc.) "directly" on the surface, e.g., in direct contact with the surface. The term "on" used with respect to forming or positioning a component, element, or layer of material "on" a surface may be used herein to mean that the component, element, or layer of material is positioned (e.g., placed, formed, deposited, etc.) "indirectly" on the surface, where one or more additional components, elements, or layers are disposed between the surface and the component, element, or layer of material.

[0021] A semiconductor device package incorporating one or more (semiconductor) dies is described herein. In particular, one or more power dies may be accommodated in the semiconductor device package. The die(s) may be monolithically integrated with, for example, one or more transistors and / or diodes, such as one or more transistors or diodes of any of the following types.

[0022] For example, the die(s) may be configured to include one or more MISFETs (Metal Insulator Semiconductor Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), JFETs (Junction Gate Field Effect Transistors), HEMTs (High Electron Mobility Transistors), bipolar transistors, or diodes such as PIN diodes or Schottky diodes.

[0023] The die can have, for example, a vertical structure, i.e., it can be fabricated in such a way that current can flow in a direction perpendicular to the main surface of the die. A die with a vertical structure can have electrodes (die pads) on both of its main surfaces, i.e., on its upper surface and bottom surface. A die with a vertical structure can be, for example, a power die.

[0024] The die can also have, for example, a horizontal structure. A die with a horizontal structure can have electrodes (die pads) on only one of its two main surfaces, e.g., on its active surface and / or upper surface. Dies such as logic integrated circuit (IC) dies and power dies (e.g., power MISFETs or power MOSFETs or power JFETs or power HEMTs) can have a horizontal structure.

[0025] The die can be fabricated from semiconductor materials such as Si, SiC, SiGe, GaAs, GaN, AlGaN, InGaAs, InAlAs, etc., and can contain, for example, inorganic and / or organic materials that are not semiconductors. In particular, dies made of multiple layers of the above materials may be involved, such as GaN-on-Si dies or GaN-on-SiC dies.

[0026] The semiconductor device package as described herein can also include one or more logic ICs to control the power die. The logic IC can include one or more driver circuits to drive one or more power dies.

[0027] The semiconductor device package as described herein can also include a molding compound. The molding compound can be an electrically insulating material such as a polymeric material. The molding compound can include or be a thermosetting material or a thermoplastic material. The thermosetting material can be made, for example, based on epoxy resin, silicone resin, or acrylic resin. The thermoplastic material can include, for example, one or more materials selected from the group consisting of polyetherimide (PEI), polyethersulfone (PES), polyphenylene sulfide (PPS), polyamideimide (PAI), and polyethylene terephthalate (PET).

[0028] The molding compound can be made by cavity molding. Various techniques such as compression molding, injection molding, powder molding, transfer molding can be used to form the molding compound. During cavity molding, the molding material can be applied to directly encapsulate and mold the multi-clamp structure and the die joined to the multi-clamp structure.

[0029] Various different types of electronic devices can be implemented in the semiconductor device package as described herein. As an example, an electronic device according to the present disclosure can constitute, for example, a power supply, a DC-DC voltage converter, an AC-DC or DC-AC voltage converter, a (power) amplifier, an engine control unit (ECU), and many other devices.

[0030] Figure 1 Shows a top perspective view of an exemplary multi - clip structure 100. The multi - clip structure 100 may include a first clip 110 and a second clip 120. A holding band 150 is fixed to the first clip 110 and the second clip 120 to hold the first clip 110 and the second clip 120 together.

[0031] In addition, as Figure 1 shown, the multi - clip structure 100 may optionally include more than two clips, for example, in addition to the first clip 110 and the second clip 120, it may also include, for example, a third clip 130. The third clip 130 is also fixed to the holding band 150 and is held together with the first clip 110 and the second clip 120 by the holding band 150. Generally, the multi - clip structure 100 may have N clips 110, 120, 130 held together by the holding band 150, where N is an integer equal to or greater than 2, 3, 5, 10, 15, etc.

[0032] Hereinafter, unless otherwise explicitly stated, any disclosure of the multi - clip structure 100 involving two or three clips by way of example similarly applies to the multi - clip structure with N clips.

[0033] The first clip 110, the second clip 120, and the third clip 130 may have longitudinal directions parallel to each other.

[0034] The holding band 150 may extend in a transverse direction transverse to the longitudinal directions of the first clip 110, the second clip 120, and / or the third clip 130.

[0035] As is apparent from Figure 2 it, the first clip 110 may include a lower surface 111 having a die - bonding portion 111A and an upper surface 112 opposite to the lower surface 111. The second clip (third clip) 120 (130) may include a lower surface 121 (131) having a die - bonding portion 121A (131A) and an upper surface 122 (132) opposite to the lower surface 121 (131). The lower surfaces 111, 121, 131 may also respectively include external - terminal - bonding portions 111B, 121B, 131B. The external - terminal - bonding portions 111B, 121B, 131B may be correspondingly disposed at the distal ends of the clips 110, 120, 130, while the die - bonding portions 111A, 121A, 131A may be correspondingly disposed at the proximal ends of the clips 110, 120, 130.

[0036] The holding band 150 may be joined to the upper surface 112 of the first clip 110 and the upper surfaces 122, 132 of the second clip 120 and / or the third clip 130.

[0037] The retaining strip 150 can be engaged only with the upper surfaces 112, 122, 132 of the first clip 110, the second clip 120, and / or the third clip 130. That is, the side surfaces of the clips 110, 120, 130 may not contact the retaining strip 150. In various embodiments, the side surfaces of the first clip 110, the second clip 120, and / or the third clip 130 may be exposed, i.e., an open space may be defined between the opposite side surfaces of the first clip 110, the second clip 120, and / or the third clip 130. In other words, there is no need to arrange a spacer element between the opposite side surfaces of the first clip 110, the second clip 120, and / or the third clip 130.

[0038] Alternatively, the retaining strip 150 may also (e.g., only) be engaged with the lower surfaces 111, 121, 131 of the first clip 110, the second clip 120, and / or the third clip 130 (not shown). Another option is to provide two (not shown) parallel retaining strips 150 with the first clip 110, the second clip 120, and / or the third clip 130 clamped therebetween.

[0039] The retaining strip 150 may include a film 151 made of an electrically insulating material. The surface of the film 151 facing the first clip 110, the second clip 120, and / or the third clip 130 may be coated with an adhesive 15 (see Figure 2 ). In this way, a mechanically reliable connection can be established between the retaining strip 150 and the first clip 110, the second clip 120, and / or the third clip 130.

[0040] The retaining strip 150 may have a uniform thickness in its longitudinal and / or transverse directions. The thickness of the retaining strip 150 may be equal to or less than or greater than 30μm, 50μm, 70μm, 90μm, 110μm, 130μm, 150μm. In particular, the thickness of the retaining strip 150 may be in the range between 50μm and 120μm.

[0041] The minimum strip length (in a direction transverse to the longitudinal direction of the first clip 110, the second clip 120, and / or the third clip 130) may be equal to or greater than 2.0mm, 2.5mm, 3.0mm, 3.5mm, 4.0mm. The minimum width of the retaining strip 150 (in a direction parallel to the longitudinal direction of the first clip 110, the second clip 120, and / or the third clip 130) may be equal to or greater than 1.0mm, 1.25mm, 1.5mm, 1.75mm, 2.0mm.

[0042] The holding strip 150 may have a structural stability sufficient to maintain the correct alignment of the first clip 110, the second clip 120, and / or the third clip 130 during pick-and-place operations. The holding strip 150 may be sufficiently rigid or stiff to determine the positions of the first clip 110, the second clip 120, and / or the third clip 130 relative to each other. The stiffness or hardness of the holding strip may be high enough to ensure that the positions of the first clip 110, the second clip 120, and / or the third clip 130 relative to each other are substantially predetermined and unchanged during the manipulation and / or transportation (e.g., pick-and-place operations) of the multi-clip structure 100. This is also required if only one or a subset of the clips 110, 120, 130 of the multi-clip structure 100 are picked up by a pick-and-place tool (e.g., a vacuum tool element) during pick-and-place operations.

[0043] To be able to provide sufficient stiffness or hardness of the holding strip 150, the holding strip 150 may include reinforcing elements, such as fibers (not shown) that may extend along the length of the holding strip 150.

[0044] The holding strip 150 (or, for example, the film 151 forming the substrate layer of the holding strip 150) may include or be a polymeric material, such as polyimide. The adhesive 152 may be an acrylic or silicone adhesive. The film 151 (e.g., polyimide substrate) may have high electrical insulation and heat resistance. The holding strip 150 may be configured to withstand a temperature equal to or greater than 360 °C, 380 °C, 400 °C. For example, polyimide can withstand temperatures in excess of 400 °C.

[0045] The dimensions, materials, and / or current-carrying capabilities of the first clip 110, the second clip 120, and / or the third clip 130 may be different. As Figure 1 and 2 shown, the cross-sectional area of the first clip 110 may be equal to or greater than M1 times the cross-sectional area of the second clip 120 and / or the third clip 130. Additionally, the contact area between the holding strip 150 and the first clip 110 (e.g., the upper surface 112 of the first clip 110) may be equal to or greater than M2 times the contact area between the holding strip 150 and the second clip 120 (e.g., the upper surface 122 of the second clip 120) and / or the third clip 130 (e.g., the upper surface 132 of the third clip 130). M1 and M2 are integers equal to or greater than 1, 2, 3, 4, 5,....

[0046] In the multi-clip structure 100, the first clip 110 may be a load clip for the power die 360, the second clip 120 may be a sense clip for the power die 360, and / or the third clip 130 may be a gate clip for the power die 360. Thus, with the aid of the holding strip 150, micro-clips such as sense clips and / or gate clips can be connected and processed together with a conventional load clip.

[0047] Figures 3 to 6 A partial view of an exemplary semiconductor device package 300 including an exemplary multi-clamp structure 100 is shown. Figure 3 and Figure 4 The perspective view of is a diagram in which the (optional) molding compound 510 is omitted for ease of illustration.

[0048] The semiconductor device package 300 includes a die carrier 350 and at least one die 360 mounted on the die carrier 350. The die 360 can be, for example, a power die.

[0049] In a die 360 having a vertical structure, the source electrode and the gate electrode of a MISFET or MOSFET or JFET or HEMT can be located on one main surface, for example, the upper main surface 360A of the die 360, while the drain electrode of the MISFET or MOSFET or JFET or HEMT can be arranged on the opposite main surface. Similarly, in a bipolar transistor die having a vertical structure, the emitter and gate electrodes of an IGBT can be located on one main surface, for example, the upper main surface 360A of the die 360, while the collector of the IGBT can be arranged on the opposite main surface. In the case of a diode, the anode can be located on one main surface, for example, the upper main surface 360A of the die 360, while the cathode of the diode can be arranged on the opposite main surface. In addition, the drain (collector) electrode and the gate electrode can also be located on one main surface, while the source (emitter) electrode is located on the other main surface.

[0050] In a die 360 having a horizontal structure, all electrodes (not shown) can be located on one main surface, for example, the upper main surface 360A of the die 360.

[0051] The first clamp 110 is bonded to a first electrode (not shown) of the die 360. The first clamp 110 can be a load clamp, and the first electrode of the die 360 can be a load electrode, such as a source electrode, a drain electrode, an emitter, a collector, an anode, or a cathode.

[0052] The second clamp 120 can be bonded to the first electrode of the die 360 or a second electrode different from the first electrode. The second clamp 120 can be, for example, a sensing clamp configured to sense the potential on the load electrode (such as the first electrode) of the die 360.

[0053] The third clamp 130 of the multi-clamp structure 100 can be a gate clamp for the die 360, which is bonded to a third electrode (not shown) of the die 360. The third electrode of the die 360 can be a control electrode (such as a gate electrode) of the die 360. As described above, the multi-clamp structure 100 only needs to be composed of at least two clamps, such as the first clamp 110 and the second clamp 120 or the first clamp 110 and the third clamp 130.

[0054] The clips 110, 120, 130 can be made of a metal or metal alloy material such as copper or a copper alloy. The clips 110, 120, 130 can be formed by an etching process, a stamping process, and / or a bending process for appropriately generating and shaping the clips 110, 120, 130.

[0055] The semiconductor device package 300 may further include a first external terminal 310, a second external terminal 320, and / or a third external terminal 330. The first external terminal 310, the second external terminal 320, and the third external terminal 330 may be, for example, leads of a lead frame 340.

[0056] From Figure 3 and 4 it can be clearly seen that the semiconductor device package 300 can be designed as a DSO (Double Side Outline) package. The DSO package has external terminals only on two opposite sides of the semiconductor device package 300. As Figure 3 and 4 shown, the external terminals 310, 320, 330 (e.g., the leads of the lead frame 340) can be arranged only on one of the two longitudinal sides of the semiconductor device package 300. The external terminals 310, 320, 330 can protrude from the package body 512 of the semiconductor device package 300, where the molding compound 510 can form the package body 512 of the semiconductor device package 300.

[0057] In various embodiments, the semiconductor device package 300 is a wireless package. The term "wireless" means that no bonding wires are included in the semiconductor device package 300 to connect the electrodes of the die 360 to the external terminals 310, 320, 330 of the semiconductor device package 300.

[0058] In various embodiments, the (power) die 360 is bonded to the external terminals 310, 320, 330 only through the clips 310, 320, 330, that is, no bonding wires are used to contact the die 360. However, a second or more dies (not shown) can be accommodated in the semiconductor device package 300 and can be connected to the external terminals through bonding wires. Such additional dies (not shown) can be, for example, logic ICs for controlling the power die 360. Such a semiconductor device package 300 is a clip - plus - bonding - wire package, but at least one die 360 is connected to the external terminals of the semiconductor device package 300 only through the clips 310, 320, 330 (and optionally also through the die carrier 350).

[0059] The die carrier 350 can be a heat sink element such as a block - shaped metal plate. As Figures 3 to 6As shown, such a bulk metal plate can be connected to the lead frame 340 by a mechanical fastener such as a pin connector 352. In other embodiments, the die carrier 350 can be an integral part of the lead frame 340, such as a die pad (not shown) of the lead frame 340.

[0060] The die carrier 350 can be made of or include any metal or metal alloy such as copper or a copper alloy. In other embodiments, the die carrier 350 can be a PCB (printed circuit board) or a ceramic substrate with metal bonded thereto, such as a ceramic substrate of DCB (direct copper bond).

[0061] The die 360 can be bonded to the die carrier 350 by any suitable means, such as by soldering, sintering, or adhesive bonding. The connection between the die 360 and the die carrier 350 can be conductive (e.g., if the die 360 has a vertical structure and / or for load current transfer purposes) or can be electrically insulating (e.g., if the die carrier 350 is not used for load current transfer purposes).

[0062] The electrical and mechanical connections between the clips 110, 120, 130 and the die 360 and between the clips 110, 120, 130 and the external terminals 310, 320, 330 are formed of, for example, solder or a diffusion solder material or are formed of a conductive paste (such as a nano paste), a sintered material, or a conductive adhesive.

[0063] As Figure 6 shown, the first clip 110, the second clip 120, and / or the third clip 130 can overcome the height difference ΔH from their die bonding portions 111A, 121A, 131A to their external terminal bonding portions 111B, 121B, 131B. The height difference ΔH can be, for example, equal to or greater than or less than 50 μm, 100 μm, 150 μm, 200 μm. By way of example, the height levels of the external terminal bonding portions 111B, 121B, 131B can be higher than the height levels of the die bonding portions 111A, 121A, 131A, respectively.

[0064] The first clip 110, the second clip 120, and / or the third clip 130 may be completely encapsulated by the molding compound 510, i.e., they do not protrude from the encapsulation body 512. Additionally, the first clip 110, the second clip 120, and / or the third clip 130 are cast in-situ by the molding compound 510. Thus, the first clip 110, the second clip 120, and / or the third clip 130 are not pre-molded clip structures designed to be coated by the molding compound 510. Instead, the molding compound 510 may be in direct contact with all the exposed surfaces of the first clip 110, the second clip 120, and / or the third clip 130. In particular, the molding compound 510 may be disposed between the opposing side surfaces of the first clip 110, the second clip 120, and / or the third clip 130 and may be in direct contact with, for example, the opposing side surfaces of the first clip 110, the second clip 120, and / or the third clip 130.

[0065] The retaining tape 150 may also be completely encapsulated and / or coated by the molding compound 510. However, since the retaining tape 150 is no longer needed after the process of joining the multi-clip structure 100 to the die 360 and the first external terminal 310, the second external terminal 320, and / or the third external terminal 330, the retaining tape 150 may be optionally removed before applying the molding compound 510, i.e., before the step of cavity molding (i.e., molding the encapsulation body 512). Thus, the retaining tape 150 may optionally not be accommodated in the encapsulation body 512.

[0066] If the retaining tape 150 is cast in-situ with the first clip 110, the second clip 120, and / or the third clip 130 by the molding compound 510, the surface of the retaining tape 150 facing the first clip 110, the second clip 120, and / or the third clip 130 (e.g., the surface of the film 151 coated with the adhesive 152) may be in direct contact with the molding compound 510.

[0067] In various embodiments, except for the die bonding portions 111A, 121A, 131A and the external terminal bonding portions 111B, 121B, 131B, the multi-clip structure 100 may be surrounded and / or embedded in the molding compound 510 at all exposed surfaces.

[0068] Figure 7 The flowchart of illustrates a method of manufacturing the multi-clip structure 100. In step 701, a first clip 110 for die bonding and a second clip 120 and / or a third clip 130 for die bonding are produced. Etching, stamping, bending, and other machining processes may be used.

[0069] In step 702, the retaining tape 150 is fixed to the first clip 110 and the second clip 120 and / or the third clip 130 to hold the first clip 110 and the second clip 120 and / or the third clip 130 together. Thus, the multi-clip structure 100 becomes an easy-to-manage single piece.

[0070] Fixing the holding strip 150 to the first clip 110, the second clip 120, and / or the third clip 130 may include disposing an adhesive 152 between the film 151 of the holding strip 150 and the first clip 110, the second clip 120, and / or the third clip 130. Then, the holding strip 150 can be fixed to the first clip 110, the second clip 120, and / or the third clip 130 through the adhesive 152. The holding strip 150 can be applied to the first clip 110, the second clip 120, and / or the third clip 130 by applying pressure. The holding strip 150 can be fixed to the first clip 110, the second clip 120, and / or the third clip 130 before the clips 110, 120, 130 are separated from each other, for example, by cutting the portions of the clips 110, 120, 130 that are connected to each other by the connecting strip.

[0071] Reference Figure 8 The flowchart of [reference] describes an exemplary method of attaching the multi-clip structure 100 to the die 360. In step 801, a multi-clip structure 100 is provided that includes a first clip 110 for die bonding, a second clip 120 for die bonding, and / or a third clip 130, and a holding strip 150 fixed to the first clip 110, the second clip 120, and / or the third clip 130 to hold the first clip 110, the second clip 120, and / or the third clip 130 together. For example, in semiconductor device package manufacturing, a multi-clip structure 100 purchased from a supplier can be used.

[0072] In step 802, the multi-clip structure 100 is placed on the die 360 as a single component. The placement can be accomplished by a single pick-and-place operation. For example, the multi-clip structure 100 can be grasped by a pick-and-place tool (such as a vacuum holder), transported above the die 360, placed on the die 360, and then released from the pick-and-place tool.

[0073] Due to the mechanical properties (stiffness, hardness) of the holding strip 150, when the multi-clip structure 100 is placed on the die 360, the holding strip 150 can provide an accurate and correct alignment of the first clip 110, the second clip 120, and / or the third clip 130. Misalignment of the multi-clip structure 100 relative to the contact portions to be connected can be avoided or easily corrected. The correct alignment accuracy of the multi-clip structure 100 can be monitored by optical inspection. Then, the multi-clip structure 100 can be attached to the die 360 as a single component.

[0074] By Figure 9 The flowchart of [reference] illustrates an exemplary method of manufacturing the semiconductor device package 300. In step 901, the die 360 is placed on the die carrier 350. The placement can be accomplished by a pick-and-place operation.

[0075] In step 902, place the multi-clamp structure 100 as a single component on top of die 360. Refer to the description at step 802 to avoid repetition.

[0076] In step 903, attach the multi-clamp structure 100 as a single component to die 360 and to the external terminals of semiconductor device package 300. A solder reflow process and / or an oven curing process may be used. Soldering, sintering, conductive adhesives, or any other technique may be used to create the bonding connections between clamps 110, 120, 130 and die 360 and between the first external terminal 310, the second external terminal 320, and / or the third external terminal 330. If the connection between die 360 and die carrier 35 has not been established so far, the solder reflow and / or oven curing process may be used simultaneously to connect die 360 to die carrier 350.

[0077] In step 904, encapsulate die 360 and multi-clamp structure 100 by cavity molding. For example, transfer molding or any of the aforementioned molding processes may also be used. Cavity molding may use a molding tool to form a cavity between the molding tools with a shape conforming to encapsulation body 512. That is, after molding and opening the mold, the finally formed encapsulation body 512 can be removed from the mold. Each encapsulation body 512 may be molded individually in one mold. No subsequent encapsulation singulation step is required as in eWLP (embedded Wafer Level Packaging).

[0078] The following examples relate to other aspects of the present disclosure:

[0079] Example 1 is a multi-clamp structure that includes a first clamp for die bonding, a second clamp for die bonding, and a holding band fixed to the first clamp and the second clamp to hold the first clamp and the second clamp together.

[0080] In Example 2, the subject matter of Example 1 may optionally include: wherein the first clamp is a load clamp for a power die, and the second clamp is a sense clamp for a power die or a gate clamp for a power die.

[0081] In Example 3, the subject matter of Example 1 or 2 may optionally include a third clamp for die bonding, wherein the holding band is fixed to the third clamp.

[0082] In Example 4, the subject matter of Example 3 may optionally include: wherein the first clamp is a load clamp for a power die, the second clamp is a sense clamp for a power die, and the third clamp is a gate clamp for a power die.

[0083] In Example 5, the subject matter of any one of Examples 1 to 4 may optionally include: wherein, the first clip includes a lower surface having a die bonding portion and an upper surface opposite to the lower surface, the second clip includes a lower surface having a die bonding portion and an upper surface opposite to the lower surface, and the holding tape is joined to the upper surface of the first clip and the upper surface of the second clip.

[0084] In Example 6, the subject matter of any one of Examples 1 to 5 may optionally include: wherein, the holding tape includes a film made of an electrically insulating material coated with an adhesive.

[0085] In Example 7, the subject matter of any one of Examples 1 to 5 may optionally include: wherein, the holding tape has a structural stability sufficient to maintain the correct alignment of the first clip and the second clip during pick-and-place operations.

[0086] Example 8 is a semiconductor device package, which includes a die carrier, a die mounted on the die carrier, a first clip joined to the first electrode of the die, a second clip joined to the first electrode or the second electrode of the die, and a molding compound encapsulating the die, the first clip, and the second clip, wherein, the first clip and the second clip are cast in situ by the molding compound and are completely encapsulated by the molding compound.

[0087] In Example 9, the subject matter of Example 8 may optionally include a holding tape fixed to the first clip and the second clip.

[0088] In Example 10, the subject matter of Example 8 or 9 may optionally include: wherein, the semiconductor device package is a wireless package.

[0089] In Example 11, the subject matter of any one of Examples 8 to 10 may optionally include: wherein, the die is a power die, the first clip is a load clip for the power die, and the second clip is a sense clip for the power die or a gate clip for the power die.

[0090] In Example 12, the subject matter of any one of Examples 8 to 11 may optionally include a first external terminal of the semiconductor device package and a second external terminal of the semiconductor device package, wherein, the first clip is joined to the first external terminal, and the second clip is joined to the second external terminal.

[0091] In Example 13, the subject matter of Example 12 may optionally include: wherein, the first and second external terminals are leads of a lead frame, and the die carrier is a heat sink element and / or a die pad of the lead frame.

[0092] Example 14 is a method of attaching a multi-clamp structure to a die, the method comprising: providing a multi-clamp structure including a first clamp for die bonding, a second clamp for die bonding, and a retaining band fixed to the first and second clamps to hold the first and second clamps together; and placing the multi-clamp structure as a single component on top of the die.

[0093] In Example 15, the subject matter of Example 14 may optionally include: wherein the placing is accomplished by a single pick-and-place operation.

[0094] Example 16 is a method of manufacturing a semiconductor device package, the method comprising: placing a die on a die carrier; placing a multi-clamp structure as a single component on top of the die, wherein the multi-clamp structure includes a first clamp for die bonding, a second clamp for die bonding, and a retaining band fixed to the first and second clamps to hold the first and second clamps together; connecting the multi-clamp structure to the die and an external terminal of the semiconductor device package; and encapsulating the die and the multi-clamp structure by cavity molding.

[0095] In Example 17, the subject matter of Example 16 may optionally include: wherein the encapsulating is performed by transfer molding.

[0096] In Example 18, the subject matter of Example 16 or 17 may optionally include: wherein the encapsulating includes disposing a molding compound between opposite side surfaces of the first and second clamps.

[0097] In Example 19, the subject matter of Example 18 may optionally include: wherein the encapsulating includes that a space defined by the opposite side surfaces of the first and second clamps is completely filled with the molding compound.

[0098] In Example 20, the subject matter of Example 18 or 19 may optionally include: wherein the encapsulating includes that the molding compound is in direct contact with the opposite side surfaces of the first and second clamps.

[0099] In Example 21, the subject matter of any one of Examples 16 - 20 may optionally include: wherein the encapsulating includes that the multi-clamp structure is embedded in the molding compound at all exposed surfaces except for the die bonding portions and the external terminal bonding portions.

[0100] Example 22 is a method of manufacturing a multi-clamp structure, the method comprising: generating a first clamp for die bonding and a second clamp for die bonding; and fixing a retaining band to the first and second clamps to hold the first and second clamps together.

[0101] In Example 23, the subject matter of Example 22 may optionally include: wherein the fixing includes disposing an adhesive between a film of the retaining band and the first clamp and between the film of the retaining band and the second clamp; and fixing the retaining band to the first and second clamps by the adhesive.

[0102] Although the present invention has been described with reference to illustrative embodiments, such description is not intended to be construed in a limiting sense. Upon review of the specification, various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to those skilled in the art. Accordingly, the appended claims are intended to cover any such modifications or embodiments.

Claims

1. A multi - clip structure (100), comprising: A first clip (110) for die bonding, the first clip (110) including a lower surface (111) having a die - bonding portion (111A) disposed at a proximal end of the first clip (110); Second clips (120, 130) for die bonding, the second clips (120, 130) including lower surfaces (121, 131) having die - bonding portions (121A, 131A) disposed at proximal ends of the second clips (120, 130); And A holding band (150) fixed to the first clip (110) and the second clips (120, 130) to hold the first clip (110) and the second clips (120, 130) together, wherein the holding band (150) has a transverse length with respect to the longitudinal directions of the first clip (110) and the second clips (120, 130), and the holding band (150) does not overlap with the die - bonding portions (111A; 121A, 131A) of the first clip (110) and the second clips (120, 130).

2. The multi-clamp structure according to claim 1, wherein, The first clip (110) is a load clip for a power die (360), and the second clips (120, 130) are a sense clip (120) for a power die (360) or a gate clip (130) for a power die (360).

3. The multi-clamping structure according to claim 1 or 2, wherein, The multi - clip structure further includes: A third clip (130, 120) for die bonding, wherein the holding band (150) is fixed to the third clip (130, 120).

4. The multi-clamping structure according to claim 3, wherein, The first clip (110) is a load clip for a power die (360), the second clip (120) is a sense clip for a power die (360), and the third clip (130) is a gate clip for a power die (360).

5. The multi - clip structure according to any one of claims 1 - 2, 4, wherein, The first clip (110) includes an upper surface (112) opposite to the lower surface (111); The second clips (120, 130) include upper surfaces (122, 132) opposite to the lower surfaces (121, 131); and The holding band (150) is joined to the upper surface (112) of the first clip (110) and the upper surfaces (122, 132) of the second clips (120, 130).

6. The multi-clamping structure according to any one of claims 1-2 and 4, wherein, The holding band (150) includes a film (151) made of an electrically insulating material coated with an adhesive (152).

7. The multi-clamping structure according to any one of claims 1-2 and 4, wherein, The holding band (150) has a structural stability sufficient to maintain the correct alignment of the first clip (110) and the second clips (120, 130) during a pick - and - place operation.

8. A semiconductor device package, comprising: A die carrier (350); A die (360) mounted on the die carrier (350); A first clip (110) bonded to a first electrode of the die (360), the first clip (110) including a lower surface (111) having a die - bonding portion (111A) disposed at a proximal end of the first clip (110); A second clip (120) joined to the second electrode of the first electrode or die (360), the second clip (120, 130) including a lower surface (121, 131) having die bonding portions (121A, 131A) disposed at the proximal ends of the second clip (120, 130); A molding compound (510) encapsulating the die (360), the first clip (110) and the second clip (120, 130), wherein the first clip (110) and the second clip (120, 130) are cast in situ by the molding compound (510) and are completely encapsulated by the molding compound (510); and A holding strip (150) fixed to the first clip (110) and the second clip (120, 130), wherein the holding strip (150) has a transverse length with respect to the longitudinal directions of the first clip (110) and the second clip (120, 130), and the holding strip (150) does not overlap the die bonding portions (111A; 121A, 131A) of the first clip (110) and the second clip (120, 130).

9. The semiconductor device package according to claim 8, wherein, The semiconductor device package (300) is a wireless package.

10. The semiconductor device package according to claim 8 or 9, wherein, The die (360) is a power die, the first clip (110) is a load clip for the power die (360), and the second clip (120, 130) is a sense clip (120) for the power die (360) or a gate clip (130) for the power die (360).

11. The semiconductor device package according to claim 8 or 9, wherein, The semiconductor device package further includes: A first external terminal (310) of the semiconductor device package (300); and A second external terminal (320, 330) of the semiconductor device package (300), wherein The first clip (110) is joined to the first external terminal (310), and the second clip (120, 130) is joined to the second external terminal (320, 330).

12. The semiconductor device package according to claim 11, wherein, The first and second external terminals (310, 320, 330) are leads of a lead frame (340), and the die carrier (350) is a heat sink element and / or a die pad of the lead frame (340).

13. A method of attaching a multi-clip structure to a die, the method comprising: Provided is a multi-clamp structure (100), which includes a first clamp (110) for die bonding, second clamps (120, 130) for die bonding, and a holding band (150) fixed to the first clamp (110) and the second clamps (120, 130) to hold the first clamp (110) and the second clamps (120, 130) together. Wherein, the first clamp (110) includes a lower surface (111) having a die bonding portion (111A) disposed at the proximal end of the first clamp (110), the second clamps (120, 130) include lower surfaces (121, 131) having die bonding portions (121A, 131A) disposed at the proximal ends of the second clamps (120, 130), the holding band (150) has a transverse length with respect to the longitudinal directions of the first clamp (110) and the second clamps (120, 130), and the holding band (150) does not overlap with the die bonding portions (111A; 121A, 131A) of the first clamp (110) and the second clamps (120, 130); and Place the multi-clamp structure (100) as a single component on top of the die (360).

14. The method according to claim 13, wherein The placement is completed by a single pick-and-place operation.

15. A method of manufacturing a semiconductor device package, the method comprising: Place a die (360) on a die carrier (350); Place the multi-clamp structure (100) as a single component on top of the die (360), wherein the multi-clamp structure (100) includes a first clamp (110) for die bonding, second clamps (120, 130) for die bonding, and a holding band (150) fixed to the first clamp (110) and the second clamps (120, 130) to hold the first clamp (110) and the second clamps (120, 130) together. Wherein, the first clamp (110) includes a lower surface (111) having a die bonding portion (111A) disposed at the proximal end of the first clamp (110), the second clamps (120, 130) include lower surfaces (121, 131) having die bonding portions (121A, 131A) disposed at the proximal ends of the second clamps (120, 130), the holding band (150) has a transverse length with respect to the longitudinal directions of the first clamp (110) and the second clamps (120, 130), and the holding band (150) does not overlap with the die bonding portions (111A; 121A, 131A) of the first clamp (110) and the second clamps (120, 130); Attach the multi-clamp structure (100) to the die (360) and the external terminals (310; 320, 330) of the semiconductor device package (300); and Encapsulate the die (360) and the multi-clamp structure (100) by cavity molding.

Images