Energy storage devices and power modules

Abstract

The present invention provides an energy storage device and a power module thereof. The power module includes a radiator, a left frame and a right frame, an IGBT assembly, a laminated busbar, a drive assembly and a support capacitor assembly; the left frame and the right frame are mounted on the radiator, and the left frame and the right frame are arranged relative to each other; the IGBT assembly is mounted on the radiator, and the IGBT assembly is located in a housing space formed by the left frame and the right frame; the support capacitor assembly is arranged in the housing space; at least a part of the laminated busbar is replaceably arranged between the support capacitor assembly and the IGBT assembly, and the laminated busbar is electrically connected to the IGBT in the IGBT assembly and the support capacitor in the support capacitor assembly. The present invention can realize the universalization of power modules in different energy storage devices by replacing part of the laminated busbars, avoids the inconvenience caused by power modules of different structures in manufacturing, replacement and maintenance, and further improves the assembly efficiency.

Description

Technical Field

[0001] The embodiments of the present invention relate to rail transit energy management system technology, and in particular to energy storage equipment and power modules thereof. Background Art

[0002] With the continuous expansion of the urban rail transit network and the sharp increase in passenger volume, the total energy consumption of urban rail has increased significantly. Among them, the medium-voltage energy feedback device (10kV or 35kV) and supercapacitor energy storage device, as the most important equipment in the urban rail energy management system, are installed in the energy management system of the subway station, which can effectively absorb and utilize the regenerative braking energy of rail transit vehicles, thereby achieving the purpose of reducing energy consumption.

[0003] As the core component of these two devices, the power module has two different circuit topologies. Among them, the single-phase bridge arm dual-parallel phase module circuit is used for the power module of the medium-voltage energy feedback device of the ground energy storage equipment, and the quadruple bidirectional half-bridge circuit is used for the power module of the supercapacitor energy storage device of the ground energy storage equipment. Therefore, the power modules in the medium-voltage energy feedback device and the supercapacitor energy storage device must adapt to the corresponding circuit topology.

[0004] There are great differences in the wiring and component layout structures of the power modules of different circuit topologies, and in the prior art, multiple power modules need to be configured in the entire system for different circuit topologies. Power modules of different structures are very different from the same power modules in terms of manufacturing, use, replacement and maintenance, which will bring great inconvenience, affect work efficiency, and cause a significant increase in system equipment costs. Therefore, the existing power modules have poor versatility, so that when manufacturing rail train energy storage equipment, all components of the above two power modules must be manufactured separately, which seriously affects the manufacturing efficiency of rail train energy storage equipment. Summary of the invention

[0005] The present invention provides an energy storage device and a power module thereof to overcome the above or other potential technical problems existing in the prior art.

[0006] In a first aspect, the present invention provides a power module, comprising: a heat sink, a left frame and a right frame, an insulated gate bipolar transistor IGBT component, a laminated busbar, a driving component and a supporting capacitor component; wherein:

[0007] The left frame and the right frame are installed on the radiator, and the left frame and the right frame are arranged opposite to each other;

[0008] The IGBT assembly is mounted on the heat sink, and the IGBT assembly is located in the accommodation space formed by the left frame and the right frame, and the IGBT assembly includes four IGBTs;

[0009] The supporting capacitor assembly is disposed in the accommodating space and fixed to at least one of the left frame and the right frame;

[0010] At least a portion of the laminated busbar is replaceably disposed between the support capacitor assembly and the IGBT assembly, and the laminated busbar is electrically connected to the IGBT in the IGBT assembly and the support capacitor in the support capacitor assembly;

[0011] The driving component is arranged on the outer side of the supporting capacitor component, and two ends of the driving component are respectively fixed to the left frame and the right frame.

[0012] Optionally, the laminated copper busbar includes a positive busbar, a negative busbar, a positive busbar extended copper busbar, and a negative busbar extended copper busbar;

[0013] The positive busbar and the negative busbar are in a right-angle bent laminated structure, the first part of the positive busbar and the negative busbar are laminated and arranged between the supporting capacitor assembly and the IGBT assembly, the second part of the positive busbar and the negative busbar are laminated and arranged outside the supporting capacitor assembly, and the second part of the positive busbar and the negative busbar are arranged opposite to the driving assembly;

[0014] The positive busbar and the negative busbar are electrically connected to two power terminals of the IGBT with opposite polarities respectively;

[0015] Two ends of the positive busbar extension copper bar are respectively connected to the positive busbar and the first insulator of the left frame;

[0016] Two ends of the negative busbar extension copper bar are respectively connected to the negative busbar and the second insulator of the left frame.

[0017] Optionally, the laminated copper busbar includes: an AC copper busbar and an AC extension copper busbar; the AC copper busbar is electrically connected to the E poles of two IGBTs and to the C poles of another two IGBTs; one end of the first DC extension copper busbar is electrically connected to the AC copper busbar, and the other end of the AC extension copper busbar extends out of the accommodating space from the opening on the right frame and is connected to the third insulator of the right frame.

[0018] Optionally, the laminated copper busbar includes: a first DC copper busbar, a second DC copper busbar, a first DC extension copper busbar, and a second DC extension copper busbar;

[0019] The first DC copper bar is electrically connected to the E level of the first IGBT and the C level of the second IGBT, one end of the first DC extension copper bar is electrically connected to the first DC copper bar, and the other end of the first DC extension copper bar extends out of the accommodating space from the opening on the right frame and is connected to the fourth insulator of the right frame;

[0020] The second DC copper busbar is electrically connected to the E level of the third IGBT and the C level of the fourth IGBT, one end of the second DC extension copper busbar is electrically connected to the second DC copper busbar, and the other end of the second DC extension copper busbar extends out of the accommodating space from the opening on the right frame and is connected to the fifth insulator of the right frame.

[0021] Optionally, a gate configuration plate is provided above each IGBT; the driving component comprises: a driving plate and a power detection plate, and the driving plate is electrically connected to the gate configuration plate and the power detection plate respectively.

[0022] Optionally, the drive assembly further includes: a drive plate mounting plate, an insulating plate and a protective cover;

[0023] The drive plate mounting plate is fixed on the left frame and the right frame; the insulating plate is mounted on the drive plate mounting plate;

[0024] The driving board and the power supply detection board are both installed on the insulating board; the protection cover is arranged on the outer sides of the driving board and the power supply detection board.

[0025] Optionally, a thermistor for detecting the temperature of the substrate of the radiator is provided on the substrate of the radiator, and the thermistor is located beside the IGBT, and the power detection board is electrically connected to the thermistor.

[0026] Optionally, the supporting capacitor assembly includes: a supporting capacitor and a supporting frame, the supporting capacitor is installed on the supporting frame, and the supporting frame is installed on the left frame and the right frame.

[0027] Optionally, the heat sink is a composite phase change heat sink.

[0028] In a second aspect, the present invention provides an energy storage device, including the power module as described above, wherein the energy storage device is a medium voltage energy feedback device or a supercapacitor energy storage device.

[0029] The present invention provides an energy storage device and a power module thereof. The power module provided by the present invention includes: a heat sink, a left frame and a right frame, an insulated gate bipolar transistor IGBT component, a laminated busbar, a drive component and a support capacitor component; wherein the left frame and the right frame are mounted on the heat sink, and the left frame and the right frame are arranged relative to each other; the IGBT component is mounted on the heat sink, and the IGBT component is located in the accommodation space formed by the left frame and the right frame, and the IGBT component includes four IGBTs; the support capacitor component is arranged in the accommodation space and fixed to at least one of the left frame and the right frame; at least a part of the laminated busbar is replaceably arranged between the support capacitor component and the IGBT component, and the laminated busbar is electrically connected to the IGBT in the IGBT component and the support capacitor in the support capacitor component; the drive component is arranged on the outside of the support capacitor component, and the two ends of the drive component are respectively fixed to the left frame and the right frame. The present invention optimizes the positions of various components of the power module, such as the IGBT and the supporting capacitor assembly, so that the power module of the present invention can manufacture power modules adapting to different circuit topologies by only replacing part of the laminated busbars, thereby realizing the universalization of power modules in different energy storage devices, avoiding the inconvenience caused by power modules with different structures in manufacturing, use, replacement and maintenance, further improving the assembly efficiency, and reducing the cost of energy storage equipment in manufacturing and maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0031] Figure 1 is a structural schematic diagram from a first perspective when a power module provided by an embodiment of the present invention is used in a supercapacitor energy storage device;

[0032] Figure 2 is a structural schematic diagram from a second perspective when the power module provided by an embodiment of the present invention is used in a supercapacitor energy storage device;

[0033] Figure 3 It is a schematic diagram of the internal structure of a power module provided by an embodiment of the present invention when used in a supercapacitor energy storage device;

[0034] Figure 4 is a schematic diagram of the structure of a driving component when the power module provided by an embodiment of the present invention is used in a supercapacitor energy storage device;

[0035] Figure 5is a circuit schematic diagram of a power module provided by an embodiment of the present invention when used in a supercapacitor energy storage device;

[0036] Figure 6 is an exploded diagram of a power module provided by an embodiment of the present invention when used in a supercapacitor energy storage device;

[0037] Figure 7 is a structural schematic diagram from a first perspective when a power module provided by an embodiment of the present invention is used in a medium voltage energy feedback device;

[0038] Figure 8 is a structural schematic diagram from a second perspective when a power module provided by an embodiment of the present invention is used in a medium voltage energy feedback device;

[0039] Fig. 9 It is a schematic diagram of the internal structure of a power module provided by an embodiment of the present invention when used in a medium voltage energy feedback device;

[0040] Fig.10 It is a structural schematic diagram of a driving component when a power module provided by an embodiment of the present invention is used in a medium voltage energy feedback device;

[0041] Fig.11 It is a circuit schematic diagram of a power module provided in an embodiment of the present invention when used in a medium voltage energy feedback device.

[0042] Description of reference numerals:

[0043] 1—Radiator;

[0044] 2—left frame;

[0045] 201—first insulator;

[0046] 202—second insulator;

[0047] 3—right frame;

[0048] 301—the fourth insulator;

[0049] 302—fifth insulator;

[0050] 303—third insulator;

[0051] 4—IGBT components;

[0052] 5—laminated busbar;

[0053] 501—positive busbar;

[0054] 502—negative busbar;

[0055] 503—Positive busbar extension copper bar;

[0056] 504—Negative busbar extension copper bar;

[0057] 505—the first DC copper busbar;

[0058] 506—second DC copper busbar;

[0059] 507—first DC extension copper busbar;

[0060] 508—second DC extension copper busbar;

[0061] 509—AC copper busbar;

[0062] 510—AC extension copper busbar;

[0063] 6—Drive assembly;

[0064] 601—driving board;

[0065] 602—power supply detection board;

[0066] 603—Driver plate mounting plate;

[0067] 604—insulation board;

[0068] 605—protective cover;

[0069] 7—support capacitor assembly;

[0070] 701—support capacitor;

[0071] 702—support frame;

[0072] 703—side frame;

[0073] 704—corner bracket;

[0074] 8—Wiring rack. DETAILED DESCRIPTION

[0075] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0076] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, or it can be an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0077] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0078] In the description of the present invention, "plurality" means two or more than two, unless otherwise precisely and specifically specified.

[0079] As the core component of the two energy storage devices, the medium-voltage energy feedback device and the supercapacitor energy storage device, the power module has two different circuit topologies. Among them, the single-phase bridge arm dual-parallel phase module circuit is used for the power module of the medium-voltage energy feedback device of the ground energy storage device, and the quadruple bidirectional half-bridge circuit is used for the power module of the supercapacitor energy storage device of the ground energy storage device. Therefore, the power modules in the medium-voltage energy feedback device and the supercapacitor energy storage device must adapt to the corresponding circuit topologies.

[0080] There are great differences in the wiring and component layout structures of various components of power modules with different circuit topologies, and in the prior art, multiple power modules need to be configured in the entire system for different circuit topologies. Power modules with different structures are very different from the same power modules in terms of manufacturing, use, replacement and maintenance, which will bring great inconvenience, affect work efficiency, and also cause a significant increase in system equipment costs.

[0081] In order to solve the above problems, an embodiment of the present invention provides a power module, which avoids the inconvenience caused by power modules of different structures in manufacturing, use, replacement and maintenance, further improves the assembly efficiency, and reduces the cost of manufacturing and maintenance of energy storage equipment.

[0082] Figure 1 is a structural schematic diagram from a first perspective when the power module provided in this embodiment is used in a supercapacitor energy storage device; Figure 2 is a structural schematic diagram from a second perspective when the power module provided in this embodiment is used in a supercapacitor energy storage device; Figure 3 is a schematic diagram of the internal structure of the power module provided in this embodiment when used in a supercapacitor energy storage device; Figure 4 is a schematic diagram of the structure of a driving component when the power module provided in this embodiment is used in a supercapacitor energy storage device; Figure 5 is a circuit schematic diagram when the power module provided in this embodiment is used in a supercapacitor energy storage device; Figure 6 is an exploded diagram of a power module provided in this embodiment when used in a supercapacitor energy storage device; Figure 7 is a structural schematic diagram from a first perspective when the power module provided in this embodiment is used in a medium voltage energy feedback device; Figure 8 is a structural schematic diagram from a second perspective when the power module provided in this embodiment is used in a medium voltage energy feedback device; Fig. 9 is a schematic diagram of the internal structure of the power module provided in this embodiment when used in a medium voltage energy feedback device; Fig.10 is a schematic structural diagram of a drive component when the power module provided in this embodiment is used in a medium voltage energy feedback device; Fig.11 It is a circuit schematic diagram when the power module provided in this embodiment is used in a medium voltage energy feedback device.

[0083] Reference Figures 1 to 11 As shown, the power module provided by the embodiment of the present invention includes: a heat sink 1, a left frame 2 and a right frame 3, an insulated gate bipolar transistor IGBT component 4, a laminated busbar 5, a drive component 6 and a support capacitor component 7; wherein the left frame 2 and the right frame 3 are mounted on the heat sink 1, and the left frame 2 and the right frame 3 are arranged relative to each other; the IGBT component 4 is mounted on the heat sink 1, and the IGBT component is located in the accommodation space formed by the left frame 2 and the right frame 3, and the IGBT component 4 includes four IGBTs; the support capacitor component 7 is arranged in the accommodation space and is fixed to at least one of the left frame 2 and the right frame 3; at least a part of the laminated busbar 5 is replaceably arranged between the support capacitor component 7 and the IGBT component 4, and the laminated busbar 5 is electrically connected to the IGBT in the IGBT component 4 and the support capacitor 701 in the support capacitor component 7; the drive component 6 is arranged on the outside of the support capacitor component 7, and the two ends of the drive component 6 are respectively fixed to the left frame 2 and the right frame 3.

[0084] Specifically, the heat sink 1, the left frame 2 and the right frame 3, the insulated gate bipolar transistor IGBT component 4, the drive component 6 and the support capacitor component 7 in the power module of this embodiment are all applicable to two different circuit topologies: a single-phase bridge arm dual parallel phase module circuit and a quadruple bidirectional half-bridge circuit. In other words, for two different circuit topologies, the structure of each component in the heat sink 1, the left frame 2 and the right frame 3, the insulated gate bipolar transistor IGBT component 4, the drive component 6 and the support capacitor component 7 in the power module of this embodiment, the overall arrangement of each component and its wiring path, etc. are not only applicable to medium voltage energy feedback devices, but also to supercapacitor energy storage devices.

[0085] Each IGBT in the IGBT assembly 4 is a 3300V, 1200A, 190×140 standard package IGBT, and the IGBT can be changed at any time, but its package size must remain consistent. At the same time, the stray inductance of the busbar is relatively reduced compared to the wire. Specifically, the stray inductance between the busbars is less than 50nH.

[0086] Among them, by fixing the supporting capacitor assembly 7 between the left frame 2 and the right frame 3, the supporting capacitor assembly 7 can be stably fixed under the radiator 1. At the same time, an accommodating space is formed between the left frame 2 and the right frame 3, so that components such as the IGBT assembly and the laminated busbar 5 can be partially accommodated in the space, thereby making the entire power module more compact and the layout of each component more reasonable.

[0087] The power module of this embodiment is a core component of the two energy storage devices. After the heat sink 1, the left frame 2 and the right frame 3, the IGBT assembly 4, the drive assembly 6 and the supporting capacitor assembly 7 are assembled, it is only necessary to replace some of the busbars in the laminated busbars 5 to manufacture different power modules to adapt to different circuit topologies, and then respectively apply them to the low-voltage energy feedback device and the supercapacitor energy storage device to achieve the universalization of power modules in different energy storage devices, avoid the inconvenience caused by power modules of different structures in manufacturing, use, replacement and maintenance, further reduce the types of parts and installation procedures, improve assembly efficiency, make maintenance and replacement operations more convenient, and reduce the cost of energy storage equipment in manufacturing and maintenance.

[0088] Reference Figure 1 and Fig.11 As shown, the laminated busbar 5 in this embodiment includes a positive busbar 501, a negative busbar 502, a positive busbar extension copper bar 503 and a negative busbar extension copper bar 504. The positive busbar 501 and the negative busbar 502 are electrically connected to two power ends of the IGBT with opposite polarities, respectively, the two ends of the positive busbar extension copper bar 503 are connected to the positive busbar 501 and the first insulator 201 of the left frame 2, respectively, and the two ends of the negative busbar extension copper bar 504 are connected to the negative busbar 502 and the second insulator 202 of the left frame 2, respectively.

[0089] In order to more clearly illustrate the connection relationship between each busbar of the laminated busbar 5 and the IGBT in the IGBT assembly 4, the IGBT assembly 4 is described in detail below. Figure 5As shown, the IGBT assembly 4 in this embodiment includes 4 IGBTs. In order to reduce the wiring path of the stacked busbar, the 4 IGBTs are arranged side by side in pairs, that is, two IGBTs are arranged on the top and two IGBTs are arranged on the bottom. For the convenience of description, the IGBT on the left side of the top is used as the first IGBT, the IGBT on the left side of the bottom is used as the second IGBT, the IGBT on the right side of the top is used as the third IGBT, and the IGBT on the right side of the bottom is used as the fourth IGBT. In specific implementation, one end of the positive busbar 501 can be electrically connected to the C-pole power terminals of the first IGBT and the third IGBT, and the other end of the positive busbar 501 is electrically connected to the capacitor terminal on the support capacitor 701 in the support capacitor assembly 7; one end of the negative busbar 502 is electrically connected to the E-pole power terminals of the second IGBT and the fourth IGBT, and the other end of the negative busbar 502 is electrically connected to the capacitor terminal of the support capacitor 701 in the support capacitor assembly 7. In this embodiment, the four IGBTs in the IGBT assembly 4 are arranged side by side in pairs, which effectively reduces the connection path between the positive busbar 501 and the negative busbar 502 and each IGBT, further reduces the busbar length, saves costs, and makes the wiring path inside the power module and the layout of each component neat and compact, thereby reducing the overall size of the power module to a greater extent and improving the adaptability of the power module of this embodiment.

[0090] Reference Figure 2 and Figure 7As shown, in order to further reduce the space occupancy of the entire power module, the positive busbar 501 and the negative busbar 502 are arranged to be a right-angled stacked structure, and the first part of the positive busbar 501 and the negative busbar 502 are stacked and arranged between the supporting capacitor component 7 and the IGBT component 4, so that one end of the positive busbar 501 and the negative busbar 502 are electrically connected to the power terminal of the IGBT, and the second part of the positive busbar 501 and the negative busbar 502 are stacked and arranged on the outside of the supporting capacitor component 7, and the second parts of the positive busbar 501 and the negative busbar 502 are arranged opposite to the driving component 6, and the second part of the positive busbar 501 is located on the outside of the second part of the negative busbar 502. The positive busbar extension copper bar 503 and the negative busbar extension copper bar 504 are arranged side by side on the outside of the second part of the positive busbar 501 and the negative busbar 502, and one end of the positive busbar extension copper bar 503 and the negative busbar extension copper bar 504 are respectively connected to one end of the second part of the positive busbar 501 and the negative busbar 502. In order to make it easier to connect the bottom ends of the second parts of the positive busbar 501 and the negative busbar 502, a connecting ear can be arranged at the bottom end of the second part of the positive busbar 501, and one end of the positive busbar extension copper bar 503 is fixed on the connecting ear; a protruding connecting ear is arranged at the bottom end of the second part of the negative busbar 502 located on the inner side, and the protruding connecting ear extends from the bottom end of the positive busbar 501 and is connected to one end of the negative busbar extension copper bar 504.

[0091] In this embodiment, the positive busbar 501 and the negative busbar 502 are arranged in a right-angled stacked structure, that is, the positive busbar 501 and the negative busbar 502 are arranged along the direction of the outer surface of the supporting capacitor assembly 7, which not only reduces the overall size of the power module, but also enables the positive busbar extension copper bar 503 and the negative busbar extension copper bar 504 to respectively connect the positive and negative busbars and the insulators on the left frame 2 with the shortest path, which not only reduces the amount of busbars and saves manufacturing costs, but also reduces the resistance of the entire circuit to a certain extent and optimizes the entire circuit structure. At the same time, a part of the positive busbar 501 and the negative busbar 502, as well as the positive busbar extension copper bar 503 and the negative busbar extension copper bar 504 are exposed to the outside of the power module, which is convenient for assembly, replacement and maintenance, thereby improving work efficiency.

[0092] Reference Figures 1 to 6As shown, when the power module of this embodiment is used for a supercapacitor energy storage device, the circuit topology of the power module is a quadruple bidirectional half-bridge circuit. At this time, the laminated copper busbar 5 in this embodiment includes, in addition to the positive busbar 501, the negative busbar 502, the positive busbar extension copper busbar 503 and the negative busbar extension copper busbar 504, a first DC copper busbar 505, a second DC copper busbar 506, a first DC extension copper busbar 507 and a second DC extension copper busbar 508; refer to Figure 3 As shown, the first DC copper bus 505 is electrically connected to the E level of the first IGBT and the C level of the second IGBT, one end of the first DC extension copper bus 507 is electrically connected to the first DC copper bus 505, the other end of the first DC extension copper bus 507 extends out of the accommodating space from the opening on the right frame 3 and is connected to the fourth insulator 301 of the right frame 3; the second DC copper bus 506 is electrically connected to the E level of the third IGBT and the C level of the fourth IGBT, one end of the second DC extension copper bus 508 is electrically connected to the second DC copper bus 506, the other end of the second DC extension copper bus 508 extends out of the accommodating space from the opening on the right frame 3 and is connected to the fifth insulator 302 of the right frame 3.

[0093] When the power module of this embodiment is used for a supercapacitor energy storage device, the positive busbar 501 and the negative busbar 502, the positive busbar extension copper bar 503 and the negative busbar extension copper bar 504, the first DC copper bar 505 and the second DC copper bar 506, and the first DC extension copper bar 507 and the second DC extension copper bar 508 in the laminated busbar 5 together form the following Figure 5 The quadruple bidirectional half-bridge circuit shown in FIG. Among them, the end of the positive busbar extension copper bar 503 connected to the first insulator 201 is recorded as DC+, the end of the negative busbar extension copper bar 504 connected to the second insulator 202 is recorded as DC-, the end of the first DC extension copper bar 507 connected to the fourth insulator 301 is recorded as CT1, and the end of the second DC extension copper bar 508 connected to the fifth insulator 302 is recorded as CT2. When the power module of this embodiment is used for the supercapacitor energy storage device, a quadruple bidirectional half-bridge circuit, referred to as a half-bridge circuit, is adopted. When the train brakes and causes the DC grid voltage to rise, the supercapacitor energy storage device is in a charging mode, specifically charging the support capacitor 701 in the support capacitor assembly 7 with the electric energy of the DC grid through the DC+ and DC- of the half-bridge circuit. At this time, the circuit works in the BUCK state; when the vehicle is towed and causes the DC grid voltage to drop, the supercapacitor energy storage device is in a discharging mode, specifically releasing the electric energy stored in the support capacitor 701 to the DC grid through CT1 and CT2 of the half-bridge circuit. At this time, the circuit works in the BOOST state, and the whole process realizes the recovery and reuse of the braking energy of the train.

[0094] Reference Figures 7 to 11As shown, when the power module of this embodiment is used for a medium-voltage energy feedback device, the circuit topology of the power module is a single-phase bridge arm dual-parallel phase module circuit. At this time, the laminated busbar 5 in this embodiment includes an AC copper busbar 509 and an AC extension copper busbar 510 in addition to the above-mentioned positive busbar 501, negative busbar 502, positive busbar extension copper busbar 503 and negative busbar extension copper busbar 504; wherein the AC copper busbar 509 is electrically connected to the E-stage of the two IGBTs and to the C-stage of the other two IGBTs, one end of the AC extension copper busbar 510 is electrically connected to the AC copper busbar 509, and the other end of the AC extension copper busbar 510 extends out of the accommodating space from the opening on the right frame 3 and is connected to the third insulator 303 of the right frame 3.

[0095] In specific implementation, in order to shorten the length of the connection path between the AC copper bus 509 and each IGBT, the AC copper bus 509 can be installed between the IGBT component 4 and the supporting capacitor component 7, so that one end of the AC copper bus 509 is electrically connected to the E pole of the first IGBT and the third IGBT, and the other end of the AC copper bus 509 is electrically connected to the C pole of the second IGBT and the fourth IGBT. This arrangement shortens the length of the connection path and makes the internal structure of the power module more neat and compact.

[0096] When the power module of this embodiment is used in a medium voltage energy feedback device, the positive busbar 501 and the negative busbar 502, the positive busbar extension copper bar 503 and the negative busbar extension copper bar 504, the AC copper bar 509 and the AC extension copper bar 510 in the laminated busbar 5 together form the following Fig.11 The single-phase bridge arm double parallel phase module circuit shown, wherein the end of the positive busbar extension copper bar 503 connected to the first insulator 201 is marked as P, the end of the negative busbar extension copper bar 504 connected to the second insulator 202 is marked as N, and the end of the AC extension copper bar 510 connected to the third insulator 303 is marked as X. The medium voltage energy-feed inverter mainly uses power electronic devices to form a high-power thyristor three-phase inverter. The DC side of the device, i.e., the P and N terminals, is connected to the DC bus in the traction substation, and its AC incoming line X is connected to the AC power grid. When the regenerative braking causes the DC voltage of the overhead line to exceed the specified value, the inverter starts to absorb current from the DC bus, and the regenerated DC power is inverted into industrial frequency AC power to feed back to the AC power grid. The output voltage changes according to the system requirements; under traction conditions, the AC power grid voltage is provided to the train through the power module to provide the DC overhead line voltage.

[0097] Since the circuit topology of the power module in the medium voltage energy feedback device is a single-phase bridge arm dual parallel phase module circuit, and in the supercapacitor energy storage device, the circuit topology of the power module is a quadruple bidirectional half-bridge circuit, the circuit connection methods between the IGBTs in the power module will be different. Specifically, Figures 1 to 6As shown, when the power module of this embodiment is used for a supercapacitor energy storage device, the E level of the first IGBT is electrically connected to the C level of the second IGBT through the first DC copper bus 505, and the first DC copper bus 505 is externally connected to the fourth insulator 301 of the right frame 3 through the first DC extension copper bus 507, and the E level of the third IGBT is electrically connected to the C level of the fourth IGBT through the second DC copper bus 506, and the second DC copper bus 506 is externally connected to the fifth insulator 302 of the right frame 3 through the second DC extension copper bus 508, thereby realizing a half-bridge circuit. Figures 7 to 11 As shown, when the power module of this embodiment is used for the medium voltage energy feedback device, the first DC copper bar 505 and the second DC copper bar 506 in the laminated busbar 5 are replaced with an AC copper bar 509, and the AC copper bar 509 is connected to four IGBTs, that is, one end of the AC copper bar 509 is electrically connected to the E poles of the first IGBT and the third IGBT, and the other end of the AC copper bar 509 is electrically connected to the C poles of the second IGBT and the fourth IGBT, so as to realize the short circuit between the first IGBT and the second IGBT and the third IGBT and the fourth IGBT. At the same time, the first DC extension copper bar 507 and the second DC extension copper bar 508 are replaced with an AC extension copper bar 510, so that the AC copper bar 509 is externally connected to the third insulator 303 of the right frame 3 through the AC extension copper bar 510, thereby realizing a single-phase bridge arm dual parallel phase module circuit. The power module of this embodiment manufactures power modules of different structures by replacing part of the laminated busbar 5 to adapt to different energy storage devices and realize the versatility of the power module.

[0098] In order to reduce the number of replacement times of parts, the laminated busbar 5 in the power module of this embodiment can be directly set to a structure for a supercapacitor energy storage device. When the power module is used in a medium-voltage energy feedback device, the first DC copper busbar 505 and the second DC copper busbar 506 can be directly short-circuited, and the first DC extension copper busbar 507 and the second DC extension copper busbar 508 can be short-circuited at the same time, so that the power module can also be used as a core component of the medium-voltage energy feedback device for energy recovery and reuse.

[0099] In this embodiment, a gate configuration plate is disposed above each IGBT; the driving assembly 6 includes a driving plate 601 and a power detection plate 602 , and the driving plate 601 is electrically connected to the gate configuration plate and the power detection plate 602 , respectively.

[0100] Specifically, the power detection board 602 is electrically connected to the driving board 601 so that it provides driving power for the driving board 601. The gate configuration board can be fixed to each IGBT by two M4 screws, and the driving board 601 drives the IGBT by electrically connecting the gate configuration board to adjust the IGBT switching waveform. Among them, the gate configuration board and the driving board 601 can be replaced at will, but their external dimensions must be kept consistent to avoid the influence of the size change of the gate configuration board and the driving board 601 on the driving. The number of driving boards 601 can be consistent with the number of IGBTs, that is, one driving board 601 drives one IGBT; because the circuit topology of the power module in the medium-voltage energy feeding device is a single-phase bridge arm dual-parallel phase module circuit, that is, four IGBTs are connected in parallel in pairs, so when the power module of this embodiment is used for the medium-voltage energy feeding device, the driving board 601 can be set to 2, and one driving board 601 drives 2 IGBTs at the same time. For example, one driving board 601 drives the second IGBT and the fourth IGBT at the same time, and the other driving board 601 drives the first IGBT and the third IGBT at the same time. In order to make the wiring length of each driving board 601 consistent with that of the gate configuration board, the driving boards 601 are evenly distributed on both sides of the power detection board 602, so as to reduce the influence of the different wiring lengths on the driving.

[0101] Reference Figure 4 and Fig.10 As shown, the driving component 6 of this embodiment also includes a driving board mounting plate 603, an insulating plate 604 and a protective cover 605; the driving board mounting plate 603 is fixed on the left frame 2 and the right frame 3; the insulating plate 604 is installed on the driving board mounting plate 603; the driving board 601 and the power supply detection board 602 are both installed on the insulating plate 604; the protective cover 605 is arranged on the outside of the driving board 601 and the power supply detection board 602.

[0102] Specifically, the drive board 601 and the power detection board 602 are fixed on the drive board mounting plate 603, so that the entire drive assembly 6 is easier to disassemble. The drive board mounting plate 603 is fixed to the side of the second part of the support capacitor assembly 7 away from the positive busbar 501 and the negative busbar 502, so as to facilitate the electrical connection between the drive board 601 and the power detection board 602 and the various components on the IGBT. Among them, the insulating plate 604 is installed on the drive board mounting plate 603 through the insulating pad column, and then the drive board 601 and the power detection board 602 are respectively installed on the insulating plate 604. Since the drive assembly 6 is located on the outside of the support capacitor assembly 7 and is a component that directly contacts the operator, in order to avoid accidental injury to the operator by the drive board 601 and the power detection board 602 in the drive assembly 6, a protective cover 605 is set on the outside of the drive board 601 and the power detection board 602 to play a protective role.

[0103] In this embodiment, a thermistor for detecting the temperature of the substrate of the radiator 1 is disposed on the substrate of the radiator 1 , and the thermistor is located beside the IGBT, and the power detection board 602 is electrically connected to the thermistor.

[0104] Specifically, the thermistor is set beside the IGBT in order to convert the internal temperature of the IGBT by measuring the substrate temperature of the heat sink 1. The power detection board 602 is connected to the thermistor to output the value of the thermistor, so that it can be intuitively judged whether the internal temperature of the IGBT exceeds the junction temperature. The number of thermistors can be adjusted according to requirements. For example, one thermistor can be set beside an IGBT, or four thermistors can be set, that is, a thermistor is set beside each IGBT, so that the internal temperature of each IGBT can be observed through the power detection board 602, so that each IGBT can be more effectively protected from being burned.

[0105] In order to prevent the connection wires between the power detection board 602 and the thermistor and the connection wires between the drive board 601 and the gate configuration board from being entangled with each other and affecting the entire working circuit, a wiring rack 8 is arranged around the substrate of the heat sink 1, and the connection wires between the drive component 6 and the IGBT are fixed on the wiring rack 8. This not only prevents the connection wires from being entangled with each other, but also prevents the connection wires from covering the surface of components such as the gate configuration board and thermistor and affecting the normal operation of each component.

[0106] Reference Figure 6 As shown, the supporting capacitor assembly 7 in this embodiment includes a supporting capacitor 701 and a supporting frame 702 . The supporting capacitor 701 is installed on the supporting frame 702 , and the supporting frame 702 is installed on the left frame 2 and the right frame 3 .

[0107] Specifically, since the supporting capacitor 701 is heavy, the supporting capacitor 701 is first fixed in the supporting frame 702, and then fixed to the left frame 2 and the right frame 3 through the supporting frame 702. The structure of the supporting frame 702 can be various. For example, the supporting frame 702 includes two side frames 703, and the two side frames 703 are fixed to the two sides of the supporting capacitor 701 close to the left and right frames by bolts. At the same time, four angle frames 704 are respectively arranged around the outer edges of the upper and lower surfaces of the supporting capacitor 701. The two ends of each angle frame 704 can be fixed to the side frame 703 by bolts, and the side frame 703 and the angle frame 704 together form the supporting frame 702. During installation, the side frame 703 is fixed to the left and right frames by bolts, and the two ends of each angle frame 704 are also fixed to the left and right frames and the substrate of the radiator 1, so that the supporting capacitor 701 can be effectively supported in both the horizontal direction and the vertical direction, further improving the overall stability of the power module of this embodiment.

[0108] The radiator 1 in this embodiment can be a composite phase change radiator, which is a high-performance heat pipe radiator with high heat dissipation performance. It uses forced air cooling to cool the heat. The radiator 1 is connected to an external air duct and has a protection level of IP20 or above. The total heat dissipation power of the composite phase change radiator is 10.5kW, and the heat dissipation substrate has a heat flux density of 100kW / m 2 The maximum temperature rise under these conditions does not exceed 40K.

[0109] The power module provided in this embodiment includes a heat sink, a left frame and a right frame, an insulated gate bipolar transistor IGBT component, a laminated busbar, a drive component and a support capacitor component; wherein the left frame and the right frame are installed on the heat sink, and the left frame and the right frame are arranged relative to each other; the IGBT component is installed on the heat sink, and the IGBT component is located in the accommodation space formed by the left frame and the right frame, and the IGBT component includes four IGBTs; the support capacitor component is arranged in the accommodation space and is fixed to at least one of the left frame and the right frame; at least a part of the laminated busbar is replaceably arranged between the support capacitor component and the IGBT component, and the laminated busbar is electrically connected to the IGBT in the IGBT component and the support capacitor in the support capacitor component; the drive component is arranged on the outside of the support capacitor component, and the two ends of the drive component are respectively fixed to the left frame and the right frame. The present invention rearranges the positions of various components of the power module, such as the IGBT and the supporting capacitor group, so that the power module of the present invention can manufacture power modules adapting to different circuit topologies by only replacing part of the laminated busbars, thereby realizing the universalization of power modules in different energy storage devices, avoiding the inconvenience caused by power modules with different structures in manufacturing, use, replacement and maintenance, further improving the assembly efficiency, and reducing the cost of energy storage equipment in manufacturing and maintenance.

[0110] The present invention also provides an energy storage device, which can apply the power module in the above embodiment. Specifically, the energy storage device in this embodiment includes the power module described in the above embodiment, and the energy storage device is a medium voltage energy feedback device or a supercapacitor energy storage device.

[0111] Specifically, the medium voltage energy feedback device and the supercapacitor energy storage device are two types of energy storage devices, and the core component power module plays a key role in the recovery and reuse of the braking energy of the train. Different energy storage devices need to install power modules of different structures to adapt to different circuit topologies, but power modules of different structures bring great inconvenience in manufacturing, use, replacement and maintenance, which affects work efficiency. In order to solve the above problems, the power module in the above embodiment is applied to the energy storage device. The operator only needs to replace part of the laminated busbar of the power module to apply it to two different energy storage devices, thereby realizing the universalization of power modules in different energy storage devices. Among them, the specific replacement method of the laminated busbar of the power module refers to the content of the aforementioned embodiment, which will not be repeated here.

[0112] There are many ways to install the power module and the energy storage device. For example, the power module is installed on a guide rail and pushed into the box of the energy storage device through the guide rail. Pulleys can also be installed at the lower ends of the left and right frames away from the radiator 1, and the power module is pushed into the box through the pulleys, and then the power module is fixed in the box through the installation holes opened on the radiator substrate.

[0113] In this embodiment, the energy storage device includes the power module described in the above embodiment. The energy storage device is a medium voltage energy feedback device or a supercapacitor energy storage device, so that the power modules in different energy storage devices are universal, avoiding the inconvenience caused by power modules of different structures in manufacturing, use, replacement and maintenance, further improving the assembly efficiency, and reducing the cost of manufacturing and maintenance of the energy storage device.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A power module, characterized in that: include: Radiator, left frame and right frame, insulated gate bipolar transistor IGBT component, laminated busbar, drive component and supporting capacitor component; among which, The left frame and the right frame are mounted on the radiator, and the left frame and the right frame are arranged opposite to each other; The IGBT assembly is mounted on the radiator, and the IGBT assembly is located in the accommodation space formed by the left frame and the right frame, and the IGBT assembly includes four IGBTs; The supporting capacitor assembly is disposed in the accommodating space and fixed to at least one of the left frame and the right frame; At least a part of the laminated busbar is replaceably arranged between the support capacitor assembly and the IGBT assembly, and the laminated busbar is electrically connected to the IGBT in the IGBT assembly and the support capacitor in the support capacitor assembly; The driving component is arranged outside the supporting capacitor component, and two ends of the driving component are respectively fixed to the left frame and the right frame; The laminated busbar comprises a positive busbar, a negative busbar, a positive busbar extended copper bar and a negative busbar extended copper bar; The positive busbar and the negative busbar are in a right-angle bent laminated structure, the first part of the positive busbar and the negative busbar are laminated and arranged between the support capacitor assembly and the IGBT assembly, the second part of the positive busbar and the negative busbar are laminated and arranged outside the support capacitor assembly, and the second part of the positive busbar and the negative busbar are arranged opposite to the drive assembly; The positive busbar and the negative busbar are electrically connected to two power terminals of the IGBT with opposite polarities respectively; Two ends of the positive busbar extension copper bar are respectively connected to the positive busbar and the first insulator of the left frame; Two ends of the negative busbar extension copper bar are respectively connected to the negative busbar and the second insulator of the left frame; When the power module is used in a medium voltage energy feed device, the laminated busbar comprises: an AC copper bar and an AC extension copper bar; the AC copper bar is electrically connected to the E-stage of two of the IGBTs and to the C-stage of the other two IGBTs; one end of the AC extension copper bar is electrically connected to the AC copper bar, and the other end of the AC extension copper bar extends out of the accommodating space from the opening on the right frame and is connected to the third insulator of the right frame; When the power module is used in a supercapacitor energy storage device, the laminated busbar includes: a first DC copper busbar, a second DC copper busbar, a first DC extension copper busbar, and a second DC extension copper busbar; The first DC copper bar is electrically connected to the E level of the first IGBT and the C level of the second IGBT, one end of the first DC extension copper bar is electrically connected to the first DC copper bar, and the other end of the first DC extension copper bar extends out of the opening on the right frame into the accommodating space and is connected to the fourth insulator of the right frame; The second DC copper busbar is electrically connected to the E level of the third IGBT and the C level of the fourth IGBT, one end of the second DC extension copper busbar is electrically connected to the second DC copper busbar, and the other end of the second DC extension copper busbar extends out of the accommodating space from the opening on the right frame and is connected to the fifth insulator of the right frame.

2. The power module according to claim 1, characterized in that: A gate configuration plate is arranged above each of the IGBTs; the driving assembly comprises: a driving plate and a power detection plate, and the driving plate is electrically connected to the gate configuration plate and the power detection plate respectively.

3. The power module according to claim 2, characterized in that: The drive assembly also includes: a drive plate mounting plate, an insulating plate and a protective cover; The drive plate mounting plate is fixed on the left frame and the right frame; the insulating plate is mounted on the drive plate mounting plate; The driving board and the power detection board are both mounted on the insulating board; the protection cover is arranged on the outer sides of the driving board and the power detection board.

4. The power module according to claim 2, characterized in that: A thermistor for detecting the temperature of the substrate of the radiator is arranged on the substrate of the radiator, and the thermistor is located beside the IGBT, and the power detection board is electrically connected to the thermistor.

5. The power module according to claim 1, characterized in that: The supporting capacitor assembly comprises: a supporting capacitor and a supporting frame, the supporting capacitor is mounted on the supporting frame, and the supporting frame is mounted on the left frame and the right frame.

6. The power module according to claim 1, characterized in that: The radiator is a composite phase change radiator.

7. An energy storage device, characterized in that: Comprising the power module as described in any one of claims 1 to 6, the energy storage device is a medium voltage energy feedback device or a supercapacitor energy storage device.

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