A high-power semiconductor laser driving protection circuit

Abstract

The application provides a high-power semiconductor laser driving protection circuit, wherein two ends of a first capacitor are connected with a second voltage input end and a first resistor respectively, two ends of a second capacitor are connected with the second voltage input end and a third resistor respectively, the other end of the third resistor is connected with an S pole of a MOS tube, a D pole of the MOS tube is connected with one end of a high-power semiconductor laser, a G pole of the MOS tube is connected with one end of a second stabilizing tube, one end of a fifth resistor is connected with the first voltage input end, the other end of the fifth resistor is connected with the second stabilizing tube, a first stabilizer is connected with the high-power semiconductor laser, and the second resistor and the third capacitor are connected in parallel in a circuit between the first stabilizing tube and the high-power semiconductor laser. The application realizes constant current driving of the high-power device by adjusting the gate voltage of the MOS tube, so that the high-power laser is stably and controllably operated.

Description

TECHNICAL FIELD

[0001] The application relates to a driving protection circuit for a high-power semiconductor laser. BACKGROUND

[0002] There are two schemes for driving a high-power light-emitting device, scheme 1: a triode is used to form a constant current source to drive the light-emitting device to emit light; and scheme 2: an integrated circuit is used to output constant current to drive the light-emitting device to emit light. However, the above schemes still have the following problems: scheme 1: generally applicable to driving a small-power light-emitting device; and scheme 2: the control circuit is complex and high in cost. SUMMARY

[0003] Therefore, the application provides a driving protection circuit for a high-power semiconductor laser.

[0004] The technical scheme of the application is as follows:

[0005] A driving protection circuit for a high-power semiconductor laser, characterized by comprising a first voltage stabilizer D1, a high-power semiconductor laser D2, a second voltage stabilizer D3, a MOS transistor U1, a first voltage input terminal CONTROL, a second voltage input terminal VCC, a first resistor R1, a first capacitor C1, a second capacitor C2, a second resistor R2, a third capacitor C3, a third resistor R3, a fourth resistor R4 and a fifth resistor R5.

[0006] Further, the first capacitor is connected at two ends to the second voltage input terminal and the first resistor respectively, the second capacitor is connected at two ends to the second voltage input terminal and the third resistor respectively, the other end of the third resistor is connected to the S pole of the MOS transistor, the D pole of the MOS transistor is connected to one end of the high-power semiconductor laser, and the G pole of the MOS transistor is connected to one end of the second voltage stabilizer.

[0007] Further, the first voltage input terminal is connected at one end to the fifth resistor, and the other end of the fifth resistor is connected to the second voltage stabilizer.

[0008] Further, the first voltage stabilizer is connected to the high-power semiconductor laser.

[0009] In the application, the CONTROL terminal is connected through discrete devices R5+D3+U1 to form a driving part of the high-power semiconductor laser. The voltage at the G pole of the MOS transistor is controlled by the voltage stabilizer D3 and the resistor R5, so that the MOS transistor is in an incomplete opening state to control the size of the current at the S pole of the MOS transistor, and the high-power semiconductor laser D2 is stably operated.

[0010] The VCC end is formed by discrete devices C3+R1+R3+D1 to constitute a protection part of the high-power laser. After energy storage, voltage division and filtering of the resistor-capacitor device, a stable voltage is provided to both ends of the high-power semiconductor laser D2, at this time, the voltage stabilizing tube D1 does not work, when a high voltage suddenly appears in the circuit, at this time, D1 starts to work to discharge the high voltage to protect the circuit.

[0011] Further, the second resistor and the third capacitor are connected in parallel between the first voltage stabilizing tube and the high-power semiconductor laser.

[0012] Further, the first voltage input end is a rectangular wave voltage input end.

[0013] Further, the second voltage input end is a direct current voltage input end.

[0014] Further, the fourth resistor is connected with the fifth resistor and the second voltage stabilizing tube respectively.

[0015] Further, the other end of the second voltage stabilizing tube is connected with one end of the third resistor.

[0016] The specific working process of the application is as follows:

[0017] 1. The CONTROL end inputs a specific frequency rectangular wave voltage, and the VCC end inputs a constant direct current voltage.

[0018] 2. The direct current voltage of the VCC end is stored, filtered and divided by C1, C2, C3, R1 and R3 to provide a stable working power source for the high-power laser.

[0019] 3. When the CONTROL end is in a high level state, by calculating and selecting appropriate voltage dividing resistor R5 and voltage stabilizing diode D3, the MOS tube can be in an incomplete conduction state to control Ids, so as to achieve the purpose of controlling the high-power laser If.

[0020] 4. When the CONTROL end changes from a high level to a low level state, the MOS tube is closed, at this time, the junction capacitance charge of the MOS tube is discharged through R4 to prevent the charge from remaining to affect the switching performance, at the same time, the high-power laser stops working, and the reverse voltage caused by the parasitic inductance of the negative electrode of the high-power laser is discharged through D1 and R2 to prevent the damage of the laser caused by the reverse overvoltage.

[0021] The application realizes the constant current driving of the high-power device by adjusting the gate voltage of the MOS tube, so that the high-power laser can work stably and controllably.

[0022] The application has the following beneficial effects:

[0023] 1. The expensive high-power laser is protected, and the service life of the high-power laser is prolonged.

[0024] 2, the current of the high-power laser is controllable, and different high-power lasers can be adapted by adjusting the G electrode voltage of the MOS tube.

[0025] 3, the MOS tube replaces a plurality of triodes and integrated circuits, reduces the circuit cost, and makes the circuit more portable and convenient for product installation and debugging. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 a schematic diagram of the driving protection circuit of the application;

[0027] Symbol explanation:

[0028] The first voltage stabilizing tube D1, the high-power semiconductor laser D2, the second voltage stabilizing tube D3, the MOS tube U1, the first voltage input end CONTROL, the second voltage input end VCC, the first resistor R1, the first capacitor C1, the second capacitor C2, the second resistor R2, the third capacitor C3, the third resistor R3, the fourth resistor R4, and the fifth resistor R5. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the application will be clearly and completely described below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the application. EMBODIMENT

[0030] A high-power semiconductor laser driving protection circuit, characterized by comprising a first voltage stabilizing tube D1, a high-power semiconductor laser D2, a second voltage stabilizing tube D3, a MOS tube U1, a first voltage input end CONTROL, a second voltage input end VCC, a first resistor R1, a first capacitor C1, a second capacitor C2, a second resistor R2, a third capacitor C3, a third resistor R3, a fourth resistor R4, and a fifth resistor R5.

[0031] Further, the first capacitor is connected to the second voltage input end and the first resistor at both ends, the second capacitor is connected to the second voltage input end and the third resistor at both ends, and the other end of the third resistor is connected to the S pole of the MOS tube; the D pole of the MOS tube is connected to one end of the high-power semiconductor laser, and the G pole of the MOS tube is connected to one end of the second voltage stabilizing tube.

[0032] Further, the first voltage input end is connected to one end of the fifth resistor, and the other end of the fifth resistor is connected to the second voltage stabilizing tube.

[0033] Further, the first voltage stabilizer is connected with the high-power semiconductor laser.

[0034] In the application, the CONTROL end is connected with the high-power semiconductor laser through discrete devices R5+D3+U1 to form a driving part of the high-power semiconductor laser.

[0035] The VCC end is connected with the high-power semiconductor laser through discrete devices C3+R1+R3+D1 to form a protection part of the high-power semiconductor laser.

[0036] Further, the second resistor and the third capacitor are connected in parallel between the first voltage stabilizer and the high-power semiconductor laser.

[0037] Further, the first voltage input end is a rectangular wave voltage input end.

[0038] Further, the second voltage input end is a direct current voltage input end.

[0039] Further, the fourth resistor is connected with the fifth resistor and the second voltage stabilizer respectively.

[0040] Further, the other end of the second voltage stabilizer is connected with one end of the third resistor.

[0041] It is apparent for those skilled in the art that the present application is not limited to the details of the above exemplary embodiments, but can be implemented in other concrete forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be considered in all aspects as illustrative and not restrictive, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended to embrace all changes falling within the meaning and range of equivalents of the claims. Any reference signs in the claims should not be considered as limiting the claims involved.

[0042] In addition, it should be understood that, although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be combined appropriately to form other embodiments that those skilled in the art can understand. It should be noted that the technical features not described in detail in the present application can be realized by any existing technology.

Claims

1. A high-power semiconductor laser driving protection circuit, characterized in that, The first voltage input end is a rectangular wave voltage input end. The first capacitor is connected with the second voltage input end and the first resistor at two ends respectively, the second capacitor is connected with the second voltage input end and the third resistor at two ends respectively, and the other end of the third resistor is connected with the MOS tube. The MOS tube is connected with one end of the high-power semiconductor laser and one end of the second voltage stabilizer. The first voltage input end is connected with one end of the fifth resistor, and the other end of the fifth resistor is connected with the second voltage stabilizer. The first voltage stabilizer is connected with the high-power semiconductor laser. The second resistor and the third capacitor are connected in parallel between the first voltage stabilizer and the high-power semiconductor laser. The second voltage input end is a direct current voltage input end.

2. The high power semiconductor laser driver protection circuit of claim 1, wherein, The fourth resistor is connected with the fifth resistor and the second voltage stabilizer respectively.

3. The high power semiconductor laser driver protection circuit of claim 1, wherein, The other end of the second voltage stabilizer is connected with one end of the third resistor.

4. The high power semiconductor laser driver protection circuit of claim 1, wherein, The G pole of the MOS tube is connected with one end of the second voltage stabilizer.

5. The high power semiconductor laser driver protection circuit of claim 1, wherein, The D pole of the MOS tube is connected with one end of the high-power semiconductor laser.

6. The high power semiconductor laser driver protection circuit of claim 1, wherein, ​

Images