Substrate cleaning device and method, substrate processing device and method

Abstract

In the rotation holding unit, the substrate is held in contact with the outer peripheral end of the substrate by a plurality of chuck pins provided on the rotating plate, so that the rotating plate rotates around the rotation axis. In the cleaning unit, the cleaning head is moved while pressing the back of the substrate held by the plurality of chuck pins by the head moving mechanism, and foreign matter on the back of the substrate is removed by grinding of the cleaning head. A reaction force is generated on the substrate by auxiliary pins to overcome the load applied by the cleaning head to the back of the substrate. Alternatively, the back of the substrate after or during cleaning by the cleaning head is further cleaned by a cleaning brush.

Description

[0001] This application is a divisional application of an application filed on January 25, 2017, with application number 201710060632.0 and invention name “Substrate cleaning device and method, substrate processing device and method”. Technical Field

[0002] The present invention relates to a substrate cleaning device for cleaning a substrate, a substrate processing device, a substrate cleaning method and a substrate processing method. Background Art

[0003] In the photolithography process of manufacturing semiconductor devices, a coating film is formed by supplying a coating liquid such as a resist solution onto a substrate. After the coating film is exposed, a predetermined pattern is formed on the coating film by development. The substrate is cleaned before the coating film is exposed (for example, refer to Japanese Patent Application Publication No. 2009-123800).

[0004] Japanese Patent Publication No. 2009-123800 discloses a substrate processing device having a cleaning and drying processing unit. In the cleaning and drying processing unit, the substrate is rotated in a state where it is held horizontally by a rotating chuck. In this state, a cleaning liquid is supplied to the surface of the substrate to wash away dust and the like attached to the substrate surface. In addition, the entire back side and the peripheral end of the substrate are cleaned with the cleaning liquid and a cleaning brush to remove pollutants attached to the entire back side and the peripheral end of the substrate.

[0005] In recent years, it is desired to form a pattern on a substrate that is more miniaturized. Here, if foreign matter remains on the substrate, the pattern forming accuracy is reduced. Therefore, it is preferred to fully remove the foreign matter remaining on the substrate. However, in the cleaning and drying processing unit described in Japanese Patent Publication No. 2009-123800, it is difficult to remove foreign matter stubbornly attached to the back side of the substrate, a coating film formed by the coating liquid being bypassed to the back side of the substrate, and foreign matter mixed in the coating film. Summary of the invention

[0006] An object of the present invention is to provide a substrate cleaning device, a substrate processing device, a substrate cleaning method, and a substrate processing method capable of removing foreign matter attached to the back surface of a substrate.

[0007] A substrate cleaning device is used to clean the back side of a substrate, and comprises: a rotating holding unit for holding a substrate and rotating the substrate, and a cleaning unit for cleaning the back side of the substrate held by the rotating holding unit; the rotating holding unit comprises: a rotating member for being able to rotate around a rotating axis, and a plurality of holding members for being arranged on the rotating member in a manner that the rotating member can abut against the outer peripheral end of the substrate to hold the substrate; the cleaning unit comprises: a cleaning tool for removing foreign matter on the back side of the substrate by grinding, a moving device for moving the cleaning tool while pressing the back side of the substrate held by the plurality of holding members, and a reaction force generating unit for generating a reaction force on the substrate to overcome the load applied by the cleaning tool to the back side of the substrate.

[0008] In the substrate cleaning device, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state of being abutted against the outer peripheral end of the substrate by a plurality of holding members arranged on the rotating member. In addition, the rotating member rotates around the rotation axis. In the cleaning unit, the moving device moves the cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. Here, a reaction force that overcomes the load applied by the cleaning tool to the back side of the substrate is generated on the substrate by the reaction force generating unit. Foreign matter on the back side of the substrate is removed by grinding the cleaning tool.

[0009] According to this structure, the load applied by the cleaning tool to the back side of the substrate during cleaning is overcome by the reaction force generated by the reaction force generating portion. Therefore, even if the cleaning tool presses the back side of the substrate, the substrate can be prevented from bending. Thus, the cleaning tool can be evenly abutted against the back side of the substrate, a uniform load can be applied to the back side of the substrate, and the cleaning can be fully performed. As a result, foreign matter firmly attached to the back side of the substrate, the coating film formed by the coating liquid around the back side of the substrate, and foreign matter mixed into the coating film, etc. can be reliably removed.

[0010] The reaction force generating unit may include a plurality of abutting members disposed on the rotating member in a manner of abutting against the outer peripheral end of the substrate, and the plurality of abutting members may generate a reaction force overcoming the load at the outer peripheral end of the substrate when the cleaning tool applies a load to the back side of the substrate. In this case, the reaction force overcoming the load applied by the abutting members to the back side of the substrate may be generated with a simple structure.

[0011] The outer peripheral end of the substrate may have a processed surface side inclined surface, a back side inclined surface, and an end surface, and each of the plurality of abutting members has an abutting surface that abuts against the processed surface side inclined surface of the substrate. In this case, a reaction force that overcomes the load applied by the abutting member to the back side of the substrate can be generated with a simple structure without damaging the coating film formed on the processed surface of the substrate.

[0012] The plurality of holding members may be configured to be switchable between a substrate holding state in which the substrate is held in contact with the outer peripheral end of the substrate and a substrate releasing state in which the substrate is separated from the outer peripheral end of the substrate. The rotating holding unit further includes a holding member switching portion for switching the plurality of holding members between the substrate holding state and the substrate releasing state. Each of the plurality of holding members rotates around the rotation axis in a manner passing through a first region and a second region along the outer peripheral end of the substrate as the rotating member rotates. When the central region of the back side of the substrate other than the peripheral portion is cleaned, the holding member switching portion causes the plurality of holding members to be in a substrate holding state, and the moving device moves the cleaning tool in the central region of the back side of the substrate. When the peripheral portion of the back side of the substrate is cleaned, the holding member switching portion causes the holding members in the first region among the plurality of holding members to be in a substrate holding state during the rotation of the rotating member, causes the holding members in the second region among the plurality of holding members to be in a substrate releasing state, and the moving device moves the cleaning tool in the peripheral portion of the back side of the substrate and in the second region.

[0013] At this time, when the peripheral portion of the back side of the substrate is cleaned, the holding member located in the second area is separated from the peripheral end of the substrate. Thus, the cleaning tool can be located in the second area in a manner that does not interfere with the holding member. As a result, the peripheral portion of the back side of the substrate can be cleaned efficiently.

[0014] Each abutting member can be arranged between two adjacent holding members in a state of abutting against the outer peripheral end of the substrate. According to this structure, even when the holding member is separated from the outer peripheral end of the substrate in the second region, the two abutting members adjacent to the holding member abut against the outer peripheral end of the substrate. Thus, it is possible to generate a reaction force that overcomes the load applied to the back of the substrate while maintaining the efficiency of cleaning the peripheral edge of the back of the substrate.

[0015] The reaction force generating unit may include a suction unit capable of sucking the back side of the substrate, and when the cleaning tool applies a load to the back side of the substrate, the suction unit generates a reaction force to overcome the load by sucking the back side of the substrate. In this case, the reaction force to overcome the load applied to the back side of the substrate can be generated without damaging the coating film formed on the processed surface of the substrate.

[0016] The cleaning tool can have the grinding surface towards the back side of the substrate, and has an opening on the grinding surface, and the suction part attracts the back side of the substrate through the opening of the cleaning tool. At this moment, the cleaning tool can be used to grind while attracting the back side of the substrate with a simple structure.

[0017] The suction unit can discharge the foreign matter removed by the cleaning tool by suction. At this time, there is no need to discharge the foreign matter removed from the back of the substrate by grinding to the outside. Thus, the cleaning efficiency can be improved.

[0018] The cleaning unit may further comprise a cleaning brush, which further cleans the back side of the substrate after or during cleaning by the cleaning tool. At this time, the different types of foreign matter attached to the back side of the substrate can be reliably removed.

[0019] Another substrate cleaning device cleans the back side of a substrate, and comprises: a rotating holding unit that holds the substrate and rotates the substrate, and a cleaning unit that cleans the back side of the substrate held by the rotating holding unit; the rotating holding unit comprises: a rotating member that is configured to be rotatable around a rotation axis, and a plurality of holding members that are arranged on the rotating member in a manner that allows the substrate to be held by abutting against the outer peripheral end of the substrate; the cleaning unit comprises: a cleaning tool that is configured to remove foreign matter on the back side of the substrate by grinding, a moving device that moves the cleaning tool while pressing the back side of the substrate held by the plurality of holding members, and a cleaning brush that further cleans the back side of the substrate after being cleaned or during cleaning by the cleaning tool.

[0020] In the substrate cleaning device, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state where the outer peripheral end of the substrate is abutted by a plurality of holding members provided on the rotating member. In addition, the rotating member rotates around the axis of rotation. In the cleaning unit, the moving device moves the cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. The foreign matter on the back side of the substrate is removed by grinding the cleaning tool. The cleaning brush further cleans the back side of the substrate after or during cleaning by the cleaning tool.

[0021] Thus, by means of the grinding of the cleaning tool, foreign matter firmly attached to the back side of the substrate, the coating film formed by the coating liquid winding around the back side of the substrate, and foreign matter mixed into the coating film, etc. can be removed. In addition, different types of foreign matter attached to the back side of the substrate can be reliably removed by the cleaning tool and the cleaning brush.

[0022] The cleaning unit may further include a cleaning liquid supply unit that supplies cleaning liquid to the back side of the substrate after or during cleaning by the cleaning tool. At this time, foreign matter removed from the back side of the substrate by grinding can be discharged to the outside with a simple structure.

[0023] A substrate processing device comprises: a film forming unit, which forms a coating film on the processed surface by supplying a coating liquid to the processed surface of the substrate; a removal unit, which supplies a removing liquid to the peripheral portion of the substrate, and the removing liquid removes the coating film formed by the film forming unit on the peripheral portion of the processed surface of the substrate; and one or another of the above-mentioned substrate cleaning devices for cleaning the back side of the substrate after the coating film on the peripheral portion of the processed surface is removed by the removal unit.

[0024] In the substrate processing apparatus, a coating liquid is supplied to a processed surface of a substrate by a film forming unit, thereby forming a coating film on the processed surface of the substrate. In addition, a removing liquid is supplied to a peripheral portion of the substrate by a removing unit, thereby removing the coating film formed on the peripheral portion of the processed surface of the substrate. Thus, a coating film is formed on the processed surface except for the peripheral portion of the substrate.

[0025] In the above-mentioned substrate cleaning device, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state where the outer peripheral end of the substrate is abutted by a plurality of holding members provided on the rotating member. In addition, the rotating member rotates around the rotation axis. In the cleaning unit, the moving device moves the cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. Foreign matter on the back side of the substrate is removed by grinding the cleaning tool.

[0026] In the above-mentioned substrate cleaning device, a reaction force that overcomes the load applied by the cleaning tool to the back side of the substrate is generated on the substrate by a reaction force generating unit. That is, the load applied by the cleaning tool to the back side of the substrate during cleaning is overcome by the reaction force generated by the reaction force generating unit. Therefore, even if the cleaning tool presses the back side of the substrate, the substrate can be prevented from bending. Thus, the cleaning tool can be evenly abutted against the back side of the substrate, a uniform load can be applied to the back side of the substrate, and the cleaning can be fully performed. As a result, foreign matter firmly attached to the back side of the substrate, a coating film formed by the coating liquid winding into the back side of the substrate, and foreign matter mixed into the coating film can be reliably removed.

[0027] In the above-mentioned another substrate cleaning device, after removing foreign matter on the back side of the substrate by grinding with a cleaning tool, the back side of the substrate is further cleaned by a cleaning brush. Thus, foreign matter firmly attached to the back side of the substrate, a coating film formed by the coating liquid winding around the back side of the substrate, and foreign matter mixed in the coating film can be removed by grinding with the cleaning tool. In addition, different types of foreign matter attached to the back side of the substrate can be reliably removed by the cleaning tool and the cleaning brush.

[0028] A substrate cleaning method for cleaning the back side of a substrate comprises: a step of holding the substrate and rotating the substrate by a rotating holding unit, and a step of cleaning the back side of the substrate held by the rotating holding unit by a cleaning unit; the step of holding the substrate and rotating the substrate comprises: a step of holding the substrate by making a plurality of holding members provided on the rotating member abut against the outer peripheral end of the substrate, and a step of rotating the rotating member around a rotation axis; the step of cleaning comprises: a step of moving a cleaning tool while pressing the back side of the substrate held by the plurality of holding members by a moving device, a step of removing foreign matter on the back side of the substrate by grinding with the cleaning tool, and a step of generating a reaction force on the substrate by a reaction force generating unit to overcome the load applied to the back side of the substrate by the cleaning tool.

[0029] According to the substrate cleaning method, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state where the outer peripheral end of the substrate is abutted by a plurality of holding members arranged on the rotating member. In addition, the rotating member rotates around the axis of rotation. In the cleaning unit, a moving device moves a cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. Here, a reaction force that overcomes the load applied by the cleaning tool to the back side of the substrate is generated on the substrate by a reaction force generating unit. Foreign matter on the back side of the substrate is removed by grinding the cleaning tool.

[0030] According to this method, the load applied by the cleaning tool to the back side of the substrate during cleaning is overcome by the reaction force generated by the reaction force generating portion. Therefore, even if the cleaning tool presses the back side of the substrate, the substrate can be prevented from bending. Thus, the cleaning tool can be evenly abutted against the back side of the substrate, a uniform load can be applied to the back side of the substrate, and the cleaning can be fully performed. As a result, foreign matter firmly attached to the back side of the substrate, the coating film formed by the coating liquid winding into the back side of the substrate, and foreign matter mixed into the coating film, etc. can be reliably removed.

[0031] Another substrate cleaning method cleans the back side of a substrate, comprising: a step of holding a substrate and rotating the substrate by a rotating holding unit, and a step of cleaning the back side of the substrate held by the rotating holding unit by a cleaning unit; the step of holding the substrate and rotating the substrate comprises: a step of holding the substrate by abutting a plurality of holding members provided on the rotating member against the outer peripheral end of the substrate, and a step of rotating the rotating member around a rotation axis; the step of cleaning comprises: a step of moving a cleaning tool while pressing the back side of the substrate held by the plurality of holding members by a moving device, a step of removing foreign matter on the back side of the substrate by grinding with the cleaning tool, and a step of further cleaning the back side of the substrate after or during cleaning with the cleaning tool by a cleaning brush.

[0032] According to the substrate cleaning method, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state where the outer peripheral end of the substrate is abutted by a plurality of holding members arranged on the rotating member. In addition, the rotating member rotates around the rotation axis. In the cleaning unit, a moving device moves a cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. Foreign matter on the back side of the substrate is removed by grinding the cleaning tool. The cleaning brush further cleans the back side of the substrate after or during cleaning by the cleaning tool.

[0033] Thus, it is possible to remove foreign matter firmly attached to the back side of the substrate, a coating film formed by the coating liquid winding around the back side of the substrate, and foreign matter mixed into the coating film, etc. by grinding with the cleaning tool. In addition, it is possible to reliably remove different types of foreign matter attached to the back side of the substrate by the cleaning tool and the cleaning brush.

[0034] A substrate processing method includes: a step of forming a coating film on the processed surface by supplying a coating liquid to the processed surface of the substrate; a step of supplying a removing liquid to the peripheral portion of the substrate for removing the coating film formed on the peripheral portion of the processed surface of the substrate; and a step of cleaning the back side of the substrate after removing the coating film on the peripheral portion of the processed surface using one or another of the above-mentioned substrate cleaning methods.

[0035] According to the substrate processing method, the coating liquid is supplied to the processed surface of the substrate by the film forming unit, thereby forming a coating film on the processed surface of the substrate. In addition, the removing liquid is supplied to the peripheral portion of the substrate by the removing unit, thereby removing the coating film formed on the peripheral portion of the processed surface of the substrate. Thus, the coating film is formed on the processed surface except for the peripheral portion of the substrate.

[0036] According to the above-mentioned substrate cleaning method, the back side of the substrate held and rotated by the rotating holding unit is cleaned by the cleaning unit. In the rotating holding unit, the substrate is held in a state where the outer peripheral end of the substrate is abutted by a plurality of holding members arranged on the rotating member. In addition, the rotating member rotates around the rotation axis. In the cleaning unit, the moving device moves the cleaning tool while pressing the back side of the substrate held by the plurality of holding members of the rotating holding unit. Foreign matter on the back side of the substrate is removed by grinding the cleaning tool.

[0037] According to the above-mentioned substrate cleaning method, a reaction force that overcomes the load applied by the cleaning tool to the back side of the substrate is generated on the substrate by the reaction force generating portion. That is, the load applied by the cleaning tool to the back side of the substrate is overcome by the reaction force generated by the reaction force generating portion when cleaning. Therefore, even if the cleaning tool presses the back side of the substrate, the substrate can be prevented from bending. Thus, the cleaning tool can be evenly abutted against the back side of the substrate, a uniform load can be applied to the back side of the substrate, and the cleaning can be fully performed. As a result, foreign matter firmly attached to the back side of the substrate, a coating film formed by the coating liquid winding into the back side of the substrate, and foreign matter mixed into the coating film, etc. can be reliably removed.

[0038] According to the above-mentioned another substrate cleaning method, after removing foreign matter on the back side of the substrate by grinding with a cleaning tool, the back side of the substrate is further cleaned by a cleaning brush. Thus, foreign matter firmly attached to the back side of the substrate, a coating film formed by the coating liquid winding around the back side of the substrate, and foreign matter mixed in the coating film can be removed by grinding with the cleaning tool. In addition, different types of foreign matter attached to the back side of the substrate can be reliably removed by the cleaning tool and the cleaning brush.

[0039] A substrate cleaning device for cleaning the back side of a substrate comprises: a rotating holding unit for holding the substrate and rotating the substrate; and

[0040] A cleaning unit cleans the back side of the substrate held by the rotating holding unit; the rotating holding unit comprises: a rotating member configured to be rotatable around a rotating axis, and a holding member arranged on the rotating member in a manner capable of holding the substrate; the cleaning unit comprises: a cleaning tool configured to remove foreign matter on the back side of the substrate by grinding, a moving device that moves the cleaning tool while pressing the back side of the substrate held by the holding member, and a cleaning brush that further cleans the back side of the substrate after being cleaned or during cleaning by the cleaning tool.

[0041] In this substrate cleaning device, the holding member abuts against the outer peripheral end of the substrate to hold the substrate.

[0042] In the substrate cleaning apparatus, the cleaning unit further includes a cleaning liquid supplying section configured to supply cleaning liquid to the back side of the substrate after being cleaned or during cleaning by the cleaning tool.

[0043] A substrate processing device comprises: a film forming unit, which forms a coating film on a processed surface by supplying a coating liquid to the processed surface of the substrate; a removal unit, which supplies a removing liquid to the peripheral portion of the substrate, the removing liquid removing the coating film formed by the film forming unit on the peripheral portion of the processed surface of the substrate; and a substrate cleaning device according to any one of claims 1 to 3, which cleans the back side of the substrate after the coating film on the peripheral portion of the processed surface is removed by the removing unit.

[0044] A substrate cleaning method is provided for cleaning the back side of a substrate, comprising: a step of holding a substrate by a rotating holding unit and rotating the substrate, and a step of cleaning the back side of the substrate held by the rotating holding unit by a cleaning unit; the step of holding the substrate and rotating the substrate comprises: a step of holding the substrate by a holding member provided on a rotating member, and a step of rotating the rotating member around a rotation axis; the step of cleaning comprises: a step of moving a cleaning tool while pressing the back side of the substrate held by the holding member by a moving device, a step of grinding the cleaning tool to remove foreign matter on the back side of the substrate, and a step of further cleaning the back side of the substrate after or during cleaning by the cleaning tool by a cleaning brush.

[0045] A substrate processing method, characterized in that it includes: a step of forming a coating film on the processed surface by supplying a coating liquid to the processed surface of the substrate; a step of supplying a removing liquid to the peripheral portion of the substrate for removing the coating film formed on the peripheral portion of the processed surface of the substrate; and a step of cleaning the back side of the substrate after removing the coating film on the peripheral portion of the processed surface using the substrate cleaning method described in claim 5. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a schematic plan view showing a substrate processing apparatus according to a first embodiment of the present invention.

[0047] Figure 2 Yes means Figure 1 A side view schematic diagram of the internal structure of the coating processing unit, the developing processing unit and the cleaning and drying processing unit.

[0048] Figure 3 Yes means Figure 2 A schematic top view of the structure of the cleaning and drying processing unit.

[0049] Figure 4 yes Figure 3 Partial AA cross-sectional view of the cleaning and drying processing unit.

[0050] Figure 5 yes Figure 3 A partial BB cross-sectional view of the cleaning and drying processing unit.

[0051] Fig. 6A and 6B is an enlarged side view of the outer peripheral end of the substrate.

[0052] Fig. 7A 7B is a diagram for explaining the holding operation of the spin chuck to hold the substrate.

[0053] Fig. 8A 8B is a diagram for explaining the holding operation of the spin chuck to hold the substrate.

[0054] Fig. 9 It is a side view for explaining the front surface cleaning process of a substrate.

[0055] Fig. 10A 10B is a side view for explaining the back side cleaning process of the substrate performed by the first cleaning mechanism.

[0056] Fig.11 It is a top view for explaining the back side cleaning process of the substrate performed by the first cleaning mechanism.

[0057] Fig.12 Yes means Figure 1 A side view schematic diagram of the internal structure of the heat treatment part and the cleaning and drying treatment part.

[0058] Fig.13 It is a side view schematic diagram showing the internal structure of the conveying section.

[0059] Fig.14 It is a side view showing the structure of the cleaning and drying processing unit according to the first modified example.

[0060] Fig.15 It is a side view for explaining the back side cleaning process of the substrate performed by the second cleaning mechanism.

[0061] Fig.16 It is a side view for explaining the cleaning process of the outer peripheral end of the substrate performed by the second cleaning mechanism.

[0062] Fig.17 It is a schematic plan view showing the structure of a cleaning and drying processing unit according to a second modification.

[0063] Figures 18A to 18C It means that when the back side is cleaned Fig.17 A side view schematic diagram of the action of the cleaning and drying processing unit.

[0064] Fig.19 It is a partial longitudinal sectional view showing the structure of a cleaning and drying processing unit according to a second embodiment of the present invention.

[0065] Fig. 20 yes Fig.19An enlarged side view of the cleaning head in the cleaning and drying processing unit.

[0066] Fig.21 is a schematic top view of a substrate cleaning unit including a substrate cleaning device. DETAILED DESCRIPTION

[0067] [1] First Embodiment

[0068] (1) Substrate processing equipment

[0069] Next, a substrate cleaning device and a substrate processing device according to a first embodiment of the present invention are described with reference to the accompanying drawings. In addition, in the following description, the substrate refers to a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magneto-optical disk, or a substrate for a photomask. In addition, at least a portion of the substrate used in this embodiment has a circular outer peripheral end. For example, the portion of the outer peripheral end other than the positioning notch is circular.

[0070] Figure 1 FIG. 1 is a schematic top view of a substrate processing apparatus according to a first embodiment of the present invention. Figure 1 In order to clarify the positional relationship, arrows indicating mutually orthogonal X, Y, and Z directions are marked in the drawings specified below. The X and Y directions are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.

[0071] like Figure 1 As shown, the substrate processing apparatus 100 includes an indexer unit 11, a coating unit 12, a developing unit 13, a cleaning and drying unit 14A, and a loading and unloading unit 14B. The cleaning and drying unit 14A and the loading and unloading unit 14B constitute an interface unit 14. An exposure device 15 is disposed adjacent to the loading and unloading unit 14B.

[0072] The indexer section 11 includes a plurality of carrier placement sections 111 and a carrier section 112. Carriers 113 accommodating a plurality of substrates W in multiple layers are placed on each carrier placement section 111. A main controller 114 and a carrier mechanism 115 are provided on the carrier section 112. The main controller 114 controls various components of the substrate processing apparatus 100. The carrier mechanism 115 carries the substrate W while holding it.

[0073] The coating unit 12 includes a coating treatment unit 121, a conveying unit 122, and a heat treatment unit 123. The coating treatment unit 121 and the heat treatment unit 123 are arranged to face each other with the conveying unit 122 interposed therebetween. Substrate placement units PASS1 to PASS4 (see FIG. 1 ) for placing substrates W are provided between the conveying unit 122 and the indexer unit 11. Fig.13 The transport unit 122 is provided with transport mechanisms 127 and 128 for transporting the substrate W (see Fig.13 ).

[0074] The developing unit 13 includes a developing unit 131, a conveying unit 132, and a heat treatment unit 133. The developing unit 131 and the heat treatment unit 133 are disposed opposite to each other with the conveying unit 132 interposed therebetween. Substrate placement units PASS5 to PASS8 (see FIG. 1 ) for placing substrates W are disposed between the conveying unit 132 and the conveying unit 122. Fig.13 The transport unit 132 is provided with transport mechanisms 137 and 138 for transporting the substrate W (see Fig.13 ).

[0075] The cleaning and drying processing section 14A includes cleaning and drying processing sections 161 and 162 and a conveying section 163. The cleaning and drying processing sections 161 and 162 are provided to face each other with the conveying section 163 interposed therebetween. The conveying sections 163 are provided with conveying mechanisms 141 and 142.

[0076] Between the conveying section 163 and the conveying section 132, there are provided placing and buffering sections P-BF1 and P-BF2 (see Fig.13 The placement and buffer parts P-BF1 and P-BF2 can accommodate a plurality of substrates W.

[0077] In addition, between the transport mechanisms 141 and 142, a substrate placement section PASS9 and a placement and cooling section P-CP (see FIG. 1 ) described later are provided adjacent to the loading and unloading section 14B. Fig.13 ). The placement and cooling part P-CP has a function of cooling the substrate W (for example, a cooling plate). In the placement and cooling part P-CP, the substrate W is cooled to a temperature suitable for exposure processing. A transport mechanism 143 is provided in the loading and unloading part 14B. The transport mechanism 143 transports the substrate W in and out of the exposure device 15.

[0078] (2) Coating Processing Section and Development Processing Section

[0079] Figure 2 Yes means Figure 1 A schematic side view of the internal structure of the coating processing unit 121, the developing processing unit 131 and the cleaning and drying processing unit 161. Figure 2 As shown, coating treatment chambers 21, 22, 23, and 24 are arranged in layers in the coating treatment section 121. A coating treatment unit 129 is arranged in each of the coating treatment chambers 21 to 24. Development treatment chambers 31, 32, 33, and 34 are arranged in layers in the development treatment section 131. A development treatment unit 139 is arranged in each of the development treatment chambers 31 to 34.

[0080] like Figure 1 as well as Figure 2As shown, each coating processing unit 129 has a plurality of rotating chucks 25, a plurality of splash shields 27, a plurality of processing liquid nozzles 28, a nozzle transport mechanism 29, and a plurality of edge flushing nozzles 30. In the present embodiment, two rotating chucks 25, two splash shields 27, and two edge flushing nozzles 30 are provided in each coating processing unit 129.

[0081] Each spin chuck 25 is driven to rotate by a driving device (eg, an electric motor) (not shown) while holding the substrate W. The cup cover 27 is provided so as to surround the spin chuck 25 .

[0082] Various processing liquids described below are supplied to the processing liquid nozzles 28 from a processing liquid storage unit (not shown) via processing liquid pipes. At a standby time when processing liquid is not supplied to the substrate W, each processing liquid nozzle 28 is arranged at a standby position. At a supply time when processing liquid is supplied to the substrate W, a processing liquid nozzle 28 arranged at the standby position is held by the nozzle transport mechanism 29, and the processing liquid nozzle 28 is moved above the substrate W.

[0083] The processing liquid is applied to the rotating substrate W by spraying the processing liquid from the processing liquid nozzle 28 while rotating the spin chuck 25. In addition, the peripheral portion of the processing liquid applied to the substrate W is dissolved by spraying the rinse liquid from the edge rinse nozzle 30 toward the peripheral portion of the rotating substrate W while rotating the spin chuck 25. Thus, the processing liquid at the peripheral portion of the substrate W is removed. Here, the peripheral portion of the substrate W refers to an area with a predetermined width along the outer peripheral end of the substrate W on the front surface of the substrate W.

[0084] In this embodiment, Figure 2 In the coating processing units 129 of the coating processing chambers 22 and 24, a processing liquid (anti-reflection liquid) for an anti-reflection film is supplied from the processing liquid nozzle 28 to the substrate W. In the coating processing units 129 of the coating processing chambers 21 and 23, a processing liquid (resist liquid) for an anti-etching film is supplied from the processing liquid nozzle 28 to the substrate W.

[0085] like Figure 2 As shown in FIG. 1 , the developing processing unit 139 includes a plurality of rotating chucks 35 and a plurality of splash shields 37 similarly to the coating processing unit 129. Figure 1 As shown, the development processing unit 139 includes two slit nozzles 38 for ejecting a developer and a moving mechanism 39 for moving the slit nozzles 38 in the X direction.

[0086] In the development processing unit 139 , the spin chuck 35 is rotated by a driving device (not shown). As a result, the substrate W is rotated. The slit nozzle 38 supplies the developer to each rotating substrate W while moving. As a result, the substrate W is subjected to development processing.

[0087] A plurality of (four in this example) cleaning and drying processing units SD1 are provided in the cleaning and drying processing section 161. In the cleaning and drying processing unit SD1, the substrate W before the exposure processing is cleaned and dried. The structure of the cleaning and drying processing unit SD1 will be described below.

[0088] (3) Structure of the cleaning and drying processing unit

[0089] Figure 3 Yes means Figure 2 A schematic top view of the structure of the cleaning and drying processing unit SD1. Figure 4 yes Figure 3 A partial AA cross-sectional view of the cleaning and drying processing unit SD1. Figure 5 yes Figure 3 A partial BB cross-sectional view of the cleaning and drying processing unit SD1. Fig. 6A , Figure 6B FIG. 2 is an enlarged side view of the outer peripheral end of the substrate W. Fig. 6A As shown, the outer peripheral edge 10 of the substrate W includes a bevel portion 1 on the processed surface side, a bevel portion 2 on the back side, and an end surface 3. A resist film R is formed as a coating film on the processed surface of the substrate W except for the peripheral edge portion PE.

[0090] like Figure 3 to Figure 5 As shown, the cleaning and drying processing unit SD1 includes a rotation holding unit 200 and a cleaning unit 300. The rotation holding unit 200 includes a rotation chuck 210, a plurality of chuck pins 220, a switching unit 230, a protection mechanism 240, and a plurality of handover mechanisms 250. The rotation chuck 210 holds the substrate W in a horizontal state and rotates the substrate W, and includes a rotation motor 211, a rotation shaft 212, a rotation plate 213, and a plate support member 214.

[0091] The rotary motor 211 is provided at the upper part of the cleaning and drying processing unit SD1 and is supported by a support member not shown. The rotary shaft 212 is provided to extend downward from the rotary motor 211. The plate support member 214 is mounted on the lower end of the rotary shaft 212. The rotary plate 213 is in the shape of a circular plate and is supported in a horizontal state by the plate support member 214. The rotary motor 211 rotates the rotary shaft 212, thereby rotating the rotary plate 213 around the vertical axis.

[0092] A liquid supply pipe 215 is inserted through the rotary motor 211, the rotary shaft 212, and the plate support member 214. A cleaning liquid can be supplied onto the substrate W held by the spin chuck 210 via the liquid supply pipe 215. Pure water, for example, is used as the cleaning liquid.

[0093] A plurality of chuck pins 220 are provided at the peripheral portion of the rotating plate 213 at equal angular intervals about the rotating shaft 212. In this example, eight chuck pins 220 are provided at the peripheral portion of the rotating plate 213 at intervals of 45 degrees about the rotating shaft 212. Each chuck pin 220 includes a shaft portion 221, a pin support portion 222, a holding portion 223, and a magnet 224.

[0094] The shaft portion 221 vertically penetrates the rotating plate 213. The pin support portion 222 extends horizontally from the lower end of the shaft portion 221. The holding portion 223 protrudes downward from the front end of the pin support portion 222. In addition, a magnet 224 is mounted on the upper end of the shaft portion 221 on the upper surface side of the rotating plate 213.

[0095] Each chuck pin 220 can rotate around the vertical axis with the shaft portion 221 as the center, and can switch between a closed state in which the holding portion 223 abuts against the outer peripheral end portion 10 of the substrate W and an open state in which the holding portion 223 is separated from the outer peripheral end portion 10 of the substrate W. In addition, in this example, when the N pole of the magnet 224 is on the inner side, each chuck pin 220 is in a closed state, and when the S pole of the magnet 224 is on the inner side, each chuck pin 220 is in an open state. In addition, in the closed state, the holding portion 223 abuts against the inclined surface portions 1 and 2 of the substrate W.

[0096] The switching unit 230 includes magnet plates 231, 232 and magnet lifting mechanisms 233, 234. The magnet plates 231, 232 are arranged above the rotating plate 213 along the circumferential direction centered on the rotating shaft 212. The magnet plates 231, 232 have an S pole on the outside and an N pole on the inside. The magnet lifting mechanisms 233, 234 lift and lower the magnet plates 231, 232, respectively. Thus, the magnet plates 231, 232 can independently move between an upper position higher than the magnet 224 of the chuck pin 220 and a lower position substantially the same height as the magnet 224 of the chuck pin 220.

[0097] Each chuck pin 220 is switched between an open state and a closed state by the lifting and lowering of the magnet plates 231 and 232. The details of the operation of the magnet plates 231 and 232 and the chuck pin 220 will be described later.

[0098] The protection mechanism 240 includes a protection body 241 and a protection body lifting mechanism 242. The protection body 241 has a shape that is rotationally symmetrical about the rotation axis 212 of the spin chuck 210, and is disposed outside the spin chuck 210. The protection body lifting mechanism 242 lifts and lowers the protection body 241. The protection body 241 blocks the cleaning liquid that is scattered from the substrate W. The cleaning liquid blocked by the protection body 241 is discharged or recovered by a liquid discharge device or a recovery device (not shown).

[0099] A plurality of (three in this example) delivery mechanisms 250 are arranged outside the shield 241 at equal angular intervals around the rotation axis 212 of the spin chuck 210. Each delivery mechanism 250 includes a lifting and rotating drive unit 251, a rotation axis 252, an arm 253, and a holding pin 254.

[0100] The rotating shaft 252 extends upward from the lifting and rotating driving unit 251. The arm 253 extends horizontally from the upper end of the rotating shaft 252. The holding pin 254 is provided at the front end of the arm 253 in such a manner as to hold the outer peripheral end 10 of the substrate W. The rotating shaft 252 is lifted and rotated by the lifting and rotating driving unit 251. Thus, the holding pin 254 moves horizontally and vertically.

[0101] The cleaning unit 300 includes a first cleaning mechanism 310 and a plurality of auxiliary pins 330. In the present embodiment, the first cleaning mechanism 310 is arranged at the lower part of the cleaning and drying processing unit SD1 in such a manner that the back surface of the substrate W held by the spin chuck 210 of the spin holding unit 200 can be cleaned. The first cleaning mechanism 310 includes a cleaning head 311, a head holding member 312, a cleaning nozzle 313, and a head moving mechanism 314.

[0102] The cleaning head 311 is roughly cylindrical, for example, formed of a PVA (polyvinyl alcohol) sponge dispersed with abrasive particles. The cleaning head 311 has a grinding surface 311a for grinding the back of the substrate W, and is held by the head holding member 312 in a manner that the grinding surface 311a faces upward. In addition, a cleaning nozzle 313 is installed on a portion of the head holding member 312 near the cleaning head 311. A liquid supply pipe (not shown) for supplying a cleaning liquid is connected to the cleaning nozzle 313. The cleaning liquid is, for example, pure water. The nozzle of the cleaning nozzle 313 faces the periphery of the grinding surface 311a of the cleaning head 311.

[0103] The head moving mechanism 314 applies a load P1 ( Figure 6B ) while moving the head holding member 312. Thus, the cleaning head 311 moves in the horizontal direction and the vertical direction. The cleaning head 311 cleans the back side of the substrate W held by the spin chuck 210 by grinding the back side of the substrate W. After cleaning the substrate W, a cleaning liquid is sprayed from the spray port of the cleaning nozzle 313 toward the periphery of the upper end of the cleaning head 311, thereby removing particles.

[0104] A plurality of auxiliary pins 330 are provided at the periphery of the rotating plate 213 at equal angles with respect to the rotating shaft 212 of the rotating holding unit 200. In this example, eight auxiliary pins 330 are provided at the periphery of the rotating plate 213 at 45 degrees with respect to the rotating shaft 212. Each auxiliary pin 330 is arranged at the middle position of two adjacent chuck pins 220 and passes through the rotating plate 213 in the vertical direction. When each chuck pin 220 is in the closed state and the holding portion 223 is in contact with the inclined surface 1, 2 ( Fig. 6A ) in the abutting state, the lower portion of each auxiliary pin 330 abuts against the inclined portion 1 of the substrate W.

[0105] Specifically, if Figure 6B As shown, the auxiliary pin 330 includes an outer peripheral surface 331, a lower surface 332 and an inclined surface 333. The outer peripheral surface 331 is cylindrical, and the lower surface 332 is horizontal. The inclined surface 333 is formed in a cone shape to connect the outer peripheral surface 331 and the lower surface 332. That is, the lower part of the auxiliary pin 330 is in a truncated cone shape. The inclined surface 333 of the auxiliary pin 330 abuts against the inclined portion 1 of the substrate W. The auxiliary pin 330 generates a reaction force P2 on the substrate W to overcome the load P1 applied to the back of the substrate W by the grinding surface 311a of the cleaning head 311.

[0106] In the present embodiment, the auxiliary pin 330 abuts against the inclined portion 1 of the substrate W in a state where the lower surface 332 does not protrude below the substrate W, but the present invention is not limited thereto. The auxiliary pin 330 may abut against the inclined portion 1 of the substrate W in a state where the lower surface 332 protrudes below the substrate W. At this time, it is preferred that the angle formed by the inclined surface 333 of the auxiliary pin 330 and the horizontal plane is, for example, less than 45 degrees. According to this structure, the lower surface 332 of the auxiliary pin 330 is sufficiently separated from the outer peripheral end 10 of the substrate W, and therefore, the grinding surface 311a of the cleaning head 311 is difficult to contact the lower surface 332 of the auxiliary pin 330.

[0107] (4) Cleaning and drying unit operation

[0108] Fig. 7A , 7B as well as Fig. 8A , 8B 2 is a diagram for explaining the holding action of the spin chuck 210 on the substrate W. First, Fig. 7A As shown, the protection body 241 moves to a position lower than the chuck pin 220. In addition, a plurality of handover mechanisms 250 ( Figure 3 )'s retaining pin 254 moves from above the protective body 241 to below the rotating plate 213. Figure 1 ) to place the substrate W on a plurality of holding pins 254.

[0109] At this time, the magnet plates 231 and 232 are in the upper position. At this time, the magnetic force lines B of the magnet plates 231 and 232 are directed from the inside to the outside at the height of the magnets 224 of the chuck pins 220. As a result, the S poles of the magnets 224 of the chuck pins 220 are attracted to the inside. Therefore, the chuck pins 220 are in the open state.

[0110] Then, if Figure 7B As shown in FIG. 1 , the plurality of holding pins 254 rise while holding the substrate W. As a result, the substrate W moves between the holding portions 223 of the plurality of chuck pins 220. Fig. 6A ) and the inclined surface 333 ( Figure 6B ) abutment.

[0111] Then, if Fig. 8A As shown, the magnet plates 231 and 232 move to the lower position. At this time, the N pole of the magnet 224 of each chuck pin 220 is attracted to the inside, and each chuck pin 220 becomes a closed state. As a result, in a state where the inclined portion 1 of the substrate W is in contact with the inclined surfaces 333 of the plurality of auxiliary pins 330, the inclined portions 1 and 2 of the substrate W are held by the holding portion 223 of each chuck pin 220. In addition, each chuck pin 220 holds the inclined portions 1 and 2 of the substrate W between adjacent holding pins 254. Therefore, the chuck pin 220 and the holding pin 254 do not interfere with each other. Thereafter, the plurality of holding pins 254 move to the outside of the protective body 241.

[0112] Then, if Figure 8B As shown, the protective body 241 moves to a height surrounding the substrate W held by the chuck pins 220. Then, the substrate W is sequentially cleaned and dried. The cleaning process includes a front cleaning process for cleaning the front side (upper surface) of the substrate W and a back cleaning process for cleaning the back side (lower surface) of the substrate W. For the front cleaning process and the back cleaning process, either one of them can be processed first or they can be processed simultaneously.

[0113] Fig. 9 FIG. 2 is a side view for explaining the front cleaning process of the substrate W. Fig. 9 As shown in FIG. 2 , when the front surface of the substrate W is cleaned, the substrate W is rotated by the spin chuck 210, and the cleaning liquid is supplied to the front surface of the substrate W through the liquid supply pipe 215. The cleaning liquid is spread over the entire surface of the substrate W by the centrifugal force and is scattered outward. Thus, dust and the like attached to the front surface of the substrate W are washed away.

[0114] Fig. 10A , Fig. 10B It is a side view for explaining the back surface cleaning process of the substrate W by the first cleaning mechanism 310. Fig.113 is a top view for explaining the back cleaning process of the substrate W by the first cleaning mechanism 310. In the back cleaning process of the substrate W, the back cleaning process of the center portion of the substrate W and the back cleaning process of the peripheral portion of the substrate W are sequentially performed. Here, the peripheral portion of the back side of the substrate W refers to the portion of the substrate W extending from the inclined portion 2 ( Fig. 6A ) to the inner side of the predetermined width, the width of which is greater than the polishing surface 311a ( Figure 6B ) is smaller. Either one of the back cleaning process of the center portion and the back cleaning process of the peripheral portion of the substrate W may be performed first.

[0115] When the back side cleaning process is performed on the center portion of the substrate W, Fig. 10A As shown in FIG. 2 , while the substrate W is rotated by the rotary chuck 210, the cleaning head 311 moves to the lower part of the center of the substrate W. Then, while a load P1 is applied to the back side of the substrate W by the grinding surface 311a of the cleaning head 311, the cleaning head 311 moves to the center of the substrate W. Thus, the center of the back side of the substrate W is ground by the cleaning head 311 to remove foreign matter attached to the back side of the substrate W. In addition, a cleaning liquid is supplied from the cleaning nozzle 313 to the contact portion between the back side of the substrate W and the grinding surface 311a of the cleaning head 311, thereby removing particles.

[0116] When the back side of the substrate W is cleaned, Fig. 10B As shown in FIG. 2 , the magnet plate 231 is arranged at a lower position, and the magnet plate 232 is arranged at an upper position. In this state, the substrate W is rotated by the spin chuck 210 .

[0117] At this time, if Fig.11 As shown in the figure, each chuck pin 220 is in a closed state in the outer region R1 of the magnet plate 231, and is in an open state in the outer region R2 of the magnet plate 232. That is, the holding portion 223 of each chuck pin 220 maintains a state of contact with the outer peripheral end 10 of the substrate W when passing through the outer region R1 of the magnet plate 231, and is separated from the outer peripheral end 10 of the substrate W when passing through the outer region R2 of the magnet plate 232.

[0118] In this example, at least seven of the eight chuck pins 220 are located in the outer region R1 of the magnet plate 231. At this time, the substrate W is held by at least seven chuck pins 220. Thus, the stability of the substrate W is ensured. In addition, even when the magnet plate 232 is arranged at the upper position, the inclined surfaces 333 ( Figure 6B ) also abuts against the inclined portion 1 of the substrate W from above.

[0119] In this state, the cleaning head 311 moves to the peripheral portion of the back side of the substrate W in the outer region R2. And, a load P1 is applied to the peripheral portion of the back side of the substrate W by the grinding surface 311a of the cleaning head 311. Thus, the peripheral portion of the back side of the substrate W is ground by the cleaning head 311, and foreign matter attached to the back side of the substrate W is removed. In addition, a cleaning liquid is supplied from the cleaning nozzle 313 to the contact portion between the back side of the substrate W and the grinding surface 311a of the cleaning head 311, thereby removing particles.

[0120] Thus, when the back side of the peripheral portion is cleaned, the holding portion 223 of each chuck pin 220 is separated from the outer peripheral end portion 10 of the substrate W when passing through the outer region R1 of the magnet plate 231. Thus, the cleaning head 311 can clean the back side of the substrate W efficiently and fully without interfering with the chuck pins 220.

[0121] Here, in the outer region R1, when a certain chuck pin 220 is separated from the outer peripheral end 10 of the substrate W, the outer peripheral end 10 of the substrate W near the chuck pin 220 is not held by the chuck pin 220. In this state, the two auxiliary pins 330 adjacent to the chuck pin 220 abut against the inclined surface 1 of the substrate W, and a reaction force P2 that overcomes the load P1 is generated on the substrate W. Therefore, the substrate W can be prevented from bending when the load P1 is applied by the cleaning head 311. Thus, the load P1 applied to the central portion and the peripheral portion of the back side of the substrate W can be evenly maintained while the entire back side of the substrate W can be fully cleaned.

[0122] After the above-mentioned front cleaning process and back cleaning process, the substrate W is dried. At this time, the magnet plates 231 and 232 are arranged at the lower position, and the substrate W is held by all the chuck pins 220. In this state, the substrate W is rotated at a high speed by rotating the chuck 210. As a result, the cleaning liquid attached to the substrate W is thrown out, and the substrate W is dried.

[0123] In addition, when drying the substrate W, an inert gas (e.g., nitrogen gas) or air or other gas may be supplied to the substrate W through the liquid supply pipe 215. At this time, the cleaning liquid on the substrate W is blown outward by the airflow formed between the rotating plate 213 and the substrate W. Thus, the substrate W can be dried efficiently.

[0124] (5) Heat treatment department

[0125] Fig.12 Yes means Figure 1 A schematic side view of the internal structure of the heat treatment unit 123, 133 and the cleaning and drying processing unit 162. Fig.12As shown, the heat treatment part 123 has an upper heat treatment part 101 disposed at the top and a lower heat treatment part 102 disposed at the bottom. In the upper heat treatment part 101 and the lower heat treatment part 102, a plurality of heat treatment units PHP, a plurality of adhesion strengthening treatment units PAHP and a plurality of cooling units CP are disposed.

[0126] A local controller LC1 is provided at the uppermost portion of the heat processing unit 123. The local controller LC1 is based on Figure 1 The operation of the coating processing unit 121, the conveying unit 122 and the heat treatment unit 123 is controlled according to the instructions of the main controller 114.

[0127] In the heat treatment unit PHP, the substrate W is subjected to a heating treatment and a cooling treatment. In the adhesion strengthening treatment unit PAHP, an adhesion strengthening treatment is performed to improve the adhesion between the substrate W and the anti-reflection film. Specifically, in the adhesion strengthening treatment unit PAHP, an adhesion strengthening agent such as HMDS (hexamethyldisilazane) is applied to the substrate W, and the substrate W is subjected to a heating treatment. In the cooling unit CP, the substrate W is subjected to a cooling treatment.

[0128] The heat treatment section 133 includes an upper heat treatment section 103 disposed at the top and a lower heat treatment section 104 disposed at the bottom. A cooling unit CP, a plurality of heat treatment units PHP, and an edge exposure unit EEW are disposed in the upper heat treatment section 103 and the lower heat treatment section 104. The substrate W can be carried from the cleaning and drying section 14A to the heat treatment units PHP in the upper heat treatment section 103 and the lower heat treatment section 104.

[0129] A local controller LC2 is provided at the uppermost portion of the heat processing unit 133. The local controller LC2 is based on Figure 1 The operations of the developing processing section 131, the conveying section 132, and the thermal processing section 133 are controlled according to the instructions of the main controller 114.

[0130] In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing (edge ​​exposure processing). Thus, when the subsequent development processing is performed, the resist film on the peripheral portion of the substrate W is removed. As a result, after the development processing, when the peripheral portion of the substrate W contacts other parts, it is possible to prevent the resist film on the peripheral portion of the substrate W from peeling off and becoming particles.

[0131] In the cleaning and drying processing section 162, a plurality of (five in this example) cleaning and drying processing units SD2 are provided. The cleaning and drying processing unit SD2 does not have the first cleaning mechanism 310 but has a first modified example ( Fig.14) has the same structure as the cleaning and drying processing unit SD1 except for the second cleaning mechanism 320. In the cleaning and drying processing unit SD2, the substrate W after the exposure process is cleaned and dried.

[0132] (6) Transportation Department

[0133] Fig.13 1 is a side view schematic diagram showing the internal structure of the transporting parts 122, 132, and 163. Fig.13 As shown, the conveying section 122 has an upper conveying chamber 125 and a lower conveying chamber 126. The conveying section 132 has an upper conveying chamber 135 and a lower conveying chamber 136. A conveying mechanism 127 is provided in the upper conveying chamber 125, and a conveying mechanism 128 is provided in the lower conveying chamber 126. In addition, a conveying mechanism 137 is provided in the upper conveying chamber 135, and a conveying mechanism 138 is provided in the lower conveying chamber 136.

[0134] Coating treatment chambers 21, 22 ( Figure 2 ) and the upper heat treatment part 101 ( Fig.12 ) are facing each other through the upper transport chamber 125, and the coating treatment chambers 23 and 24 ( Figure 2 ) and the lower heat treatment section 102 ( Fig.12 ) are opposite to each other through the lower transport chamber 126. The developing processing chambers 31 and 32 ( Figure 2 ) and the upper heat treatment part 103 ( Fig.12 ) are opposite to each other through the upper transport chamber 135, and the developing processing chambers 33 and 34 ( Figure 2 ) and the lower heat treatment section 104 ( Fig.12 ) are opposite to each other across the lower transport chamber 136.

[0135] Substrate placement parts PASS1 and PASS2 are provided between the transfer part 112 and the upper transfer chamber 125, and substrate placement parts PASS3 and PASS4 are provided between the transfer part 112 and the lower transfer chamber 126. Substrate placement parts PASS5 and PASS6 are provided between the upper transfer chamber 125 and the upper transfer chamber 135, and substrate placement parts PASS7 and PASS8 are provided between the lower transfer chamber 126 and the lower transfer chamber 136.

[0136] A loading and buffering section P-BF1 is provided between the upper transport chamber 135 and the transport section 163, and a loading and buffering section P-BF2 is provided between the lower transport chamber 136 and the transport section 163. In the transport section 163, a substrate loading section PASS9 and a plurality of loading and cooling sections P-CP are provided adjacent to the loading and unloading section 14B.

[0137] The transport mechanism 137 and the transport mechanisms 141 and 142 ( Figure 1 ) to carry the substrate W into and out of the loading and buffering unit P-BF1. The substrate W can be carried in and out of the loading and buffering unit P-BF1 by the conveying mechanism 138 and the conveying mechanisms 141 and 142 ( Figure 1 ) to carry the substrate W into and out of the loading and buffering unit P-BF2. Figure 1 ) and the transport mechanism 143 carry the substrate W into and out of the substrate mounting part PASS9 and the mounting and cooling part P-CP.

[0138] The substrate W conveyed from the indexer section 11 to the coating section 12 is placed on the substrate placement section PASS1 and the substrate placement section PASS3 , and the substrate W conveyed from the coating section 12 to the indexer section 11 is placed on the substrate placement section PASS2 and the substrate placement section PASS4 .

[0139] The substrate W conveyed from the coating section 12 to the developing section 13 is placed on the substrate placement sections PASS5 and PASS7 , and the substrate W conveyed from the developing section 13 to the coating section 12 is placed on the substrate placement sections PASS6 and PASS8 .

[0140] The substrates W transported from the developing section 13 to the cleaning and drying section 14A are placed in the placement and buffer sections P-BF1 and P-BF2. The substrates W transported from the cleaning and drying section 14A to the loading and unloading section 14B are placed in the placement and cooling section P-CP. The substrates W transported from the loading and unloading section 14B to the cleaning and drying section 14A are placed in the substrate placement section PASS9.

[0141] The transport mechanism 127 and the coating treatment chambers 21 and 22 ( Figure 2 ), substrate mounting parts PASS1, PASS2, PASS5, PASS6 ( Fig.13 ) and the upper heat treatment unit 101 ( Fig.12 ) to transfer the substrate W. The transport mechanism 128 and the coating processing chambers 23 and 24 ( Figure 2 ), substrate mounting parts PASS3, PASS4, PASS7, PASS8 ( Fig.13 ) and the lower heat treatment section 102 ( Fig.12 ) Transfer substrate W.

[0142] The transport mechanism 137 and the developing processing chambers 31 and 32 ( Figure 2 ), substrate mounting parts PASS5, PASS6 ( Fig.13 )、Loading and buffering part P-BF1( Fig.13 ) and the upper heat treatment section 103 ( Fig.12 ) to receive the substrate W. The transport mechanism 138 and the developing processing chambers 33 and 34 ( Figure 2), substrate mounting parts PASS7, PASS8 ( Fig.13 )、Loading and buffering part P-BF2( Fig.13 ) and the lower heat treatment section 104 ( Fig.12 ) Transfer substrate W.

[0143] (7) Substrate processing

[0144] One side reference Figure 1 , Figure 2 , Fig.12 as well as Fig.13 The substrate processing is described. Figure 1 ), a carrier 113 ( Figure 1 ). Transport mechanism 115 ( Figure 1 ) from the carrier 113 to the substrate mounting parts PASS1 and PASS3 ( Fig.13 ) to transport the unprocessed substrate W. In addition, the transport mechanism 115 carries the substrate W on the substrate placement parts PASS2 and PASS4 ( Fig.13 ) is transported to the transporter 113.

[0145] In the coating unit 12, the conveying mechanism 127 ( Fig.13 ) The unprocessed substrates W placed on the substrate placement unit PASS1 are sequentially transferred to the adhesion strengthening processing unit PAHP ( Fig.12 )、Cooling unit CP( Fig.12 ) and coating treatment chamber 22 ( Figure 2 Then, the transport mechanism 127 transports the substrates W in the coating treatment chamber 22 to the thermal treatment unit PHP ( Fig.12 )、Cooling unit CP( Fig.12 )、Coating treatment chamber 21( Figure 2 ), heat treatment unit PHP( Fig.12 ) and substrate mounting portion PASS5 ( Fig.13 ).

[0146] At this time, after the substrate W is subjected to the adhesion strengthening treatment in the adhesion strengthening treatment unit PAHP, the substrate W is cooled to a temperature suitable for forming an anti-reflection film in the cooling unit CP. Next, in the coating treatment chamber 22, the coating treatment unit 129 ( Figure 2 ) to form an anti-reflection film on the substrate W. Then, after the substrate W is heat-treated in the heat treatment unit PHP, the substrate W is cooled to a temperature suitable for forming a resist film in the cooling unit CP. Next, in the coating treatment chamber 21, the coating treatment unit 129 ( Figure 2), a resist film is formed on the substrate W. Then, in the heat treatment unit PHP, the substrate W is heat-treated and the substrate W is placed on the substrate placement portion PASS5.

[0147] In addition, the transport mechanism 127 carries the substrate on the substrate mounting portion PASS6 ( Fig.13 ) is transported to the substrate mounting portion PASS2 ( Fig.13 ).

[0148] Transport mechanism 128( Fig.13 ) The unprocessed substrates W placed on the substrate placement unit PASS3 are sequentially transported to the adhesion strengthening processing unit PAHP ( Fig.12 )、Cooling unit CP( Fig.12 ) and coating treatment chamber 24 ( Figure 2 Then, the transport mechanism 128 transports the substrates W in the coating treatment chamber 24 to the thermal treatment unit PHP ( Fig.12 )、Cooling unit CP( Fig.12 )、Coating treatment chamber 23( Figure 2 ), heat treatment unit PHP( Fig.12 ) and substrate mounting portion PASS7 ( Fig.13 ).

[0149] In addition, the transport mechanism 128 places the substrate on the substrate placement portion PASS8 ( Fig.13 ) after the development process is carried out to the substrate mounting portion PASS4 ( Fig.13 ). Coating treatment chambers 23, 24 ( Figure 2 ) and the lower heat treatment section 102 ( Fig.12 ) in the substrate W is similar to the above-mentioned coating processing chambers 21 and 22 ( Figure 2 ) and the upper heat treatment unit 101 ( Fig.12 ) The processing contents on the substrate W are respectively the same.

[0150] In the developing section 13, the transport device 137 ( Fig.13 ) The substrates W after the resist film is formed on the substrate mounting part PASS5 are sequentially transported to the edge exposure part EEW ( Fig.12 ) and the loading and buffering part P-BF1 ( Fig.13 ). At this time, in the edge exposure unit EEW, the edge exposure process is performed on the substrate W. The substrate W after the edge exposure process is placed on the placement and buffer unit P-BF1.

[0151] In addition, the conveying mechanism 137 is connected to the heat treatment unit PHP ( Fig.12) takes out the substrate W after the exposure process and the heat treatment. The transport mechanism 137 transports the substrate W to the cooling unit CP ( Fig.12 ), any one of the developing processing chambers 31, 32 ( Figure 2 ), heat treatment unit PHP( Fig.12 ) and substrate mounting portion PASS6 ( Fig.13 ).

[0152] At this time, after the substrate W is cooled to a temperature suitable for the development process in the cooling unit CP, the substrate W is subjected to the development process by the development process unit 139 in either of the development process chambers 31 and 32. Then, the substrate W is subjected to the heat treatment in the heat treatment unit PHP and is placed on the substrate placement portion PASS6.

[0153] Transport device 138( Fig.13 ) The substrate W after the resist film is formed on the substrate mounting part PASS7 is sequentially transported to the edge exposure part EEW ( Fig.12 ) and the loading and buffering part P-BF2 ( Fig.13 ).

[0154] In addition, the transport mechanism 138 is connected to the heat treatment unit PHP ( Fig.12 ) takes out the substrate W after the exposure process and the heat treatment. The transport mechanism 138 transports the substrate W to the cooling unit CP ( Fig.12 ), any one of the developing processing chambers 33, 34 ( Figure 2 ), heat treatment unit PHP( Fig.12 ) and substrate mounting portion PASS8 ( Fig.13 The processing contents of the substrate W in the developing processing chambers 33 and 34 and the lower thermal processing unit 104 are respectively the same as the processing contents of the substrate W in the developing processing chambers 31 and 32 and the upper thermal processing unit 103 described above.

[0155] In the cleaning and drying processing section 14A, the conveying mechanism 141 ( Figure 1 ) will be placed on the placement and buffer parts P-BF1, P-BF2 ( Fig.13 ) are sequentially transported to the cleaning and drying processing unit SD1 ( Figure 2 ) and the placement and cooling part P-CP ( Fig.13 At this time, after the substrate W is cleaned and dried in the cleaning and drying processing unit SD1, the substrate W is cooled in the placement and cooling unit P-CP to a temperature suitable for passing through the exposure device 15 ( Figure 1 ) is the temperature at which the exposure treatment is performed.

[0156] Transport mechanism 142( Figure 1) is placed on the substrate mounting portion PASS9 ( Fig.13 ) after the exposure process is sequentially transported to the cleaning and drying processing unit SD2 ( Fig.12 ) and the heat treatment unit PHP ( Fig.12 At this time, after the substrate W is cleaned and dried in the cleaning and drying processing unit SD2, a post-exposure bake (PEB) process is performed in the thermal processing unit PHP.

[0157] In the loading and unloading section 14B, the transport mechanism 143 ( Figure 1 ) will be placed on the placement and cooling part P-CP ( Fig.13 ) before the exposure process is transported to the exposure device 15. In addition, the transport mechanism 143 ( Figure 1 ) The substrate W after the exposure process is taken out from the exposure device 15, and the substrate W is transported to the substrate mounting portion PASS9 ( Fig.13 ).

[0158] (8) Effect

[0159] In this embodiment, when the back side of the substrate W is cleaned, the reaction force P2 generated by the plurality of auxiliary pins 330 overcomes the load P1 formed by the cleaning head 311 applying force to the back side of the substrate W. Therefore, even if the cleaning head 311 presses the back side of the substrate W, the substrate W can be prevented from bending. Thus, the grinding surface 311a of the cleaning head 311 can be evenly abutted against the back side of the substrate W, and a uniform load P1 can be applied to the back side of the substrate W, so that the substrate W can be fully cleaned. As a result, foreign matter firmly attached to the back side of the substrate W can be reliably removed, and the coating film formed by the coating liquid going around to the back side of the substrate W and foreign matter mixed in the coating film can be reliably removed.

[0160] In addition, in this embodiment, since the inclined surface 333 of the auxiliary pin 330 abuts against the inclined portion 1 on the processed surface side of the substrate W, it is possible to generate a reaction force P2 that overcomes the load P1 applied to the back side of the substrate W without causing damage to the anti-etching film R formed on the processed surface of the substrate W.

[0161] (9) First Modification

[0162] Fig.14 1 is a side view showing the structure of the cleaning and drying processing unit SD1 of the first modified example. The cleaning and drying processing unit SD1 of the first modified example has the same structure as the first cleaning unit 300 except that the cleaning unit 300 has not only the first cleaning mechanism 310 but also the second cleaning mechanism 320. Figure 4 The cleaning and drying processing unit SD1 has the same structure as the above. Fig.14As shown, the second cleaning mechanism 320 includes a cleaning brush 321 , a brush holding member 322 , a cleaning nozzle 323 , and a brush moving mechanism 324 .

[0163] The cleaning brush 321 is roughly cylindrical in shape, and is formed of, for example, a sponge. The cleaning brush 321 is held by a brush holding member 322. A groove 321a having a V-shaped cross section is formed on the outer peripheral surface of the cleaning brush 321. A liquid supply pipe (not shown) for supplying cleaning liquid is connected to the cleaning nozzle 323. The spray port of the cleaning nozzle 323 faces the periphery of the upper end of the cleaning brush 321. The brush moving mechanism 324 moves the brush holding member 322. As a result, the cleaning brush 321 moves in the horizontal direction and the vertical direction.

[0164] In the first modified example of the cleaning and drying processing unit SD1, after the back surface cleaning process is performed by the first cleaning mechanism 310, the back surface cleaning process and the outer peripheral end cleaning process are sequentially performed by the second cleaning mechanism 320 before the drying process. Fig.15 It is a side view for explaining the back surface cleaning process of the substrate W performed by the second cleaning mechanism 320.

[0165] like Fig.15 As shown in FIG. 2 , when the back side of the substrate W is cleaned, the cleaning brush 321 is moved to the bottom of the substrate W while the substrate W is rotated by the rotary chuck 210. Then, the cleaning brush 321 is moved between the center and the peripheral edge of the back side of the substrate W while the upper surface of the cleaning brush 321 is in contact with the back side of the substrate W. The cleaning liquid is supplied from the cleaning nozzle 323 to the contact portion between the substrate W and the cleaning brush 321. Thus, the entire back side of the substrate W is cleaned by the cleaning brush 321, and contaminants attached to the back side of the substrate W are removed.

[0166] Fig.16 FIG. 4 is a side view for explaining the cleaning process of the outer peripheral end of the substrate W by the second cleaning mechanism 320. Fig.16 As shown in FIG. 1 , when the outer peripheral end of the substrate W is cleaned, the magnet plate 231 is arranged at the lower position and the magnet plate 232 is arranged at the upper position. In this state, the substrate W is rotated by rotating the chuck 210. Fig. 10B The first cleaning mechanism 310 performs the same back cleaning process on the peripheral portion of the substrate W. In the outer region R1 of the magnet plate 231, each chuck pin 220 is in a closed state, and in the outer region R2 of the magnet plate 232, each chuck pin 220 is in an open state.

[0167] In this state, the cleaning brush 321 moves between the holding portion 223 of the chuck pin 220 and the outer peripheral end 10 of the substrate W in the outer area R2. And the groove 321a of the cleaning brush 321 is in pressure contact with the outer peripheral end 10 of the substrate W. The cleaning liquid is supplied from the cleaning nozzle 323 to the contact portion between the cleaning brush 321 and the substrate W. Thus, the entire outer peripheral end 10 of the substrate W is cleaned, and contaminants attached to the outer peripheral end 10 of the substrate W are removed.

[0168] pass Fig.15 The back side cleaning process of the substrate W performed by the second cleaning mechanism 320 can be followed by Fig. 10A After the first cleaning mechanism 310 performs back cleaning on the center of the substrate W, Fig.16 The cleaning process of the outer peripheral end of the substrate W by the second cleaning mechanism 320 can be performed by Fig. 10B The first cleaning mechanism 310 performs back cleaning processing on the peripheral portion of the substrate W and then performs the cleaning process continuously.

[0169] In this way, in the cleaning and drying processing unit SD1 of the first modified example, the front surface, the back surface, and the peripheral end portion 10 of the substrate W are cleaned by the first cleaning mechanism 310 and the second cleaning mechanism 320. Thus, different types of foreign matter attached to the substrate W can be reliably removed. In addition, in this structure, the cleaning nozzle 313 may not be provided on the first cleaning mechanism 310.

[0170] exist Figure 5 or Fig.14 In the cleaning and drying processing unit SD1, the cleaning unit 300 includes one first cleaning mechanism 310, but the present invention is not limited thereto. The cleaning unit 300 may include a plurality of first cleaning mechanisms 310 having different roughnesses of the grinding surfaces 311a of the cleaning heads 311. In this case, the substrate W is cleaned by one first cleaning mechanism 310 including a cleaning head 311 having a rough grinding surface 311a, and then the substrate W is cleaned by another first cleaning mechanism 310 including a cleaning head 311 having a fine (smooth) grinding surface 311a. Thus, different types of foreign matter attached to the substrate W can be removed more reliably.

[0171] In addition, Fig.14 In the cleaning and drying processing unit SD1, the cleaning unit 300 includes one second cleaning mechanism 320, but the present invention is not limited thereto. The cleaning unit 300 may include a plurality of second cleaning mechanisms 320. In this case, the back surface of the substrate W can be cleaned by one second cleaning mechanism 320, and the outer peripheral end portion 10 of the substrate W can be cleaned by another second cleaning mechanism 320. Thus, the back surface cleaning process and the outer peripheral end portion cleaning process can be performed simultaneously.

[0172] In the cleaning and drying processing unit SD1 of the first modified example, the head moving mechanism 314 and the brush moving mechanism 324 can be realized by a common moving mechanism. In addition, as in the above example, when a plurality of first cleaning mechanisms 310 or second cleaning mechanisms 320 are provided in the cleaning unit 300, a part or all of the moving mechanisms of the plurality of head moving mechanisms 314 and the brush moving mechanism 324 can be realized by a common moving mechanism.

[0173] (10) Second Modification

[0174] In the cleaning and drying processing unit SD1 of the first modified example, after the back cleaning process performed by the first cleaning mechanism 310 is completed, the back cleaning process is performed by the second cleaning mechanism 320, but the present invention is not limited thereto. The back cleaning process may be performed by the second cleaning mechanism 320 before the back cleaning process performed by the first cleaning mechanism 310 is completed. Fig.17 FIG. 2 is a schematic top view showing the structure of the cleaning and drying processing unit SD1 according to the second modified example. Fig.17 In the figure, the chuck pin 220 and the auxiliary pin 330 are omitted.

[0175] like Fig.17 As shown in FIG. 1 , when the back cleaning process is not being performed, the first cleaning mechanism 310 is in a state of extending in one direction and waiting at one side of the rotating holding unit 200 and below the substrate W. The cleaning head 311 is installed at one end of the head holding member 312. When the first cleaning mechanism 310 is in standby, the position where the cleaning head 311 is arranged is called the head standby position p1. Fig.17 In FIG. 1 , the head standby position p1 is indicated by a two-dot chain line.

[0176] When the back cleaning process is performed by the first cleaning mechanism 310, the head holding member 312 rotates with the central axis 312a of the other end of the head holding member 312 as a reference. Fig.17 As shown by the thick arrow a1, the cleaning head 311 moves between a position facing the center of the substrate W held by the spin chuck 210 and a head standby position p1 at a height lower than the substrate W. In addition, the height of the head holding member 312 is adjusted so that the polishing surface 311a of the cleaning head 311 contacts the back surface of the substrate W.

[0177] When the back cleaning process is not being performed, the second cleaning mechanism 320 stands by in a state extending in one direction at the other side of the rotation holding unit 200 and below the substrate W. The cleaning brush 321a is mounted on one end of the brush holding member 322. When the second cleaning mechanism 320 is on standby, the position where the cleaning brush 321 is arranged is referred to as the brush standby position p2. Fig.17 In FIG. 1 , the brush standby position p2 is indicated by a two-dot chain line.

[0178] When the back cleaning process is performed by the cleaning brush 321, the brush holding member 322 rotates with the central axis 322a of the other end of the brush holding member 322 as a reference. Fig.17 As shown by the thick arrow a2, the cleaning brush 321 moves between a position facing the center of the substrate W held by the spin chuck 200 and a brush standby position p2 at a height lower than the substrate W. In addition, the height of the brush holding member 322 is adjusted so that the upper surface of the cleaning brush 321 contacts the back surface of the substrate W.

[0179] Here, in the cleaning and drying processing unit SD1, when the head holding member 312 and the brush holding member 322 rotate simultaneously, a certain area where the head holding member 312 and the brush holding member 322 may interfere with each other is defined as an interference area if. The interference area if is an overlapping area between the trajectory of the head holding member 312 and the trajectory of the brush holding member 322 due to rotation.

[0180] Figures 18A to 18C This indicates when back cleaning is being performed. Fig.17 A side view schematic diagram of the operation of the cleaning and drying processing unit SD1. Figures 18A to 18C In the figure, the rotation holding unit 200 and the auxiliary pin 330 are omitted.

[0181] At the beginning of the back cleaning process, Fig.17 The substrate W held by the rotation holding unit 200 rotates at a predetermined speed. In addition, the cleaning head 311 of the first cleaning mechanism 310 and the cleaning brush 321 of the second cleaning mechanism 320 are located at a head standby position p1 and a brush standby position p2 at a height lower than the substrate W, respectively.

[0182] Then, if Fig.18A As shown by the dot-dash arrow, the cleaning head 311 moves to below the center of the substrate W and then rises to bring the polishing surface 311 a into contact with the back surface of the substrate W. Thus, the center of the back surface of the substrate W is polished by the cleaning head 311 .

[0183] Then, if Fig.18B As shown by the dotted arrow, the cleaning head 311 moves to the outer peripheral end of the substrate W. Thus, the back side of the substrate W is ground from the center to the outer peripheral end. Fig.17 The cleaning nozzle 313 supplies the cleaning liquid to the substrate W. Therefore, the contaminants peeled off from the back surface of the substrate W due to polishing are washed away by the cleaning liquid.

[0184] When the head holding member 312 moves outside the interference area if, as shown in FIG. Fig.18BAs shown by the double-dashed arrow, the cleaning brush 321 moves to below the center of the substrate W and then rises, and the upper surface contacts the back surface of the substrate W. Thus, the center of the back surface of the substrate W is cleaned by the cleaning brush 321.

[0185] Then, if Fig. 18C As shown by the double-dashed arrow in FIG. 1 , the cleaning brush 321 moves to the outer peripheral end of the substrate W. Thus, the back side of the substrate W is cleaned from the center to the outer peripheral end. Fig.17 The cleaning nozzle 323 supplies the cleaning liquid to the substrate W. Therefore, the contaminants peeled off from the back surface of the substrate W due to polishing are washed away by the cleaning liquid.

[0186] The cleaning head 311 and the cleaning brush 321 return to the head standby position p1 and the brush standby position p2, respectively, thereby completing the back side cleaning process of the substrate W. According to this structure, the back side cleaning process performed by the first cleaning mechanism 310 and the back side cleaning process performed by the second cleaning mechanism 320 can be performed simultaneously without interference between the head holding member 312 and the brush holding member 322.

[0187] [2] Second Embodiment

[0188] Regarding the substrate cleaning apparatus and the substrate processing apparatus of the second embodiment, differences from the substrate cleaning apparatus and the substrate processing apparatus of the first embodiment will be described. Fig.19 It is a partial longitudinal sectional view showing the structure of the cleaning and drying processing unit SD1 according to the second embodiment of the present invention. Fig. 20 yes Fig.19 An enlarged side view of the cleaning head 311 in the cleaning and drying processing unit SD1. Fig.19 As shown, in the present embodiment, the cleaning unit 300 does not include the plurality of auxiliary pins 330 .

[0189] In addition, in this embodiment, the shape of the holding portion 223 of each chuck pin 220 is similar to Figure 4 The shape of the retaining portion 223 of the chuck pin 220 is different. Fig.19 In the example, the lower part of the holding portion 223 is a truncated cone and the upper part is a cylindrical shape. The diameter of the chuck pin 220 in the horizontal plane gradually decreases from the bottom to the top in the truncated cone part and is constant in the cylindrical part. At this time, the substrate W is inclined with the inclined portion 1 ( Fig. 6A ) is held by multiple holding parts 223 without abutting against each holding part 223.

[0190] exist Fig.19The cleaning head 311 of the first cleaning mechanism 310 is formed with an opening 311b that passes through the polishing surface 311a in the vertical direction. In addition, the first cleaning mechanism 310 also includes a suction drive mechanism 315. The suction drive mechanism 315 is, for example, an aspiration fan, which sucks the back side of the substrate W through the opening 311b of the cleaning head 311. Fig. 20 As shown, when the back surface cleaning process is performed on the substrate W, the back surface of the substrate W is cleaned by the cleaning head 311 while the substrate W is sucked into the cleaning head 311 through the opening 311 b .

[0191] At this time, even when the grinding surface 311a of the cleaning head 311 applies a load P1 to a portion of the center and the peripheral portion of the back side of the substrate W, a reaction force P2 that overcomes the load P1 can be generated on the substrate W by suction without damaging the coating film formed on the processed surface of the substrate W. Thus, the substrate W is prevented from bending when the load P1 is applied by the cleaning head 311. In addition, the load P1 can be applied to the entire back side of the substrate W with a uniform pressure by the grinding surface 311a of the cleaning head 311. As a result, the entire back side of the substrate W can be cleaned while the load P1 applied to the center and the peripheral portion of the back side of the substrate W is uniformly maintained.

[0192] In addition, in this embodiment, the bevel portion 1 of the substrate W does not contact other components including the chuck pins 220. Therefore, even when the polishing surface 311a of the cleaning head 311 presses the back surface of the substrate W, the back surface of the substrate W can be cleaned without damaging the bevel portion 1 of the substrate W.

[0193] Moreover, in this embodiment, foreign matters such as particles generated by cleaning the back side of the substrate W and impurities such as the cleaning liquid used in the cleaning process of the substrate W can be sucked and discharged from the opening 311b. Thus, the cleaning head 311 can be easily kept clean. Therefore, the first cleaning mechanism 310 does not need to include the cleaning nozzle 313. In addition, since there is no need to discharge foreign matters to the outside, the cleaning efficiency can be improved.

[0194] [3] Other Implementations

[0195] (1) In the above embodiment, the cleaning and drying processing unit SD1 is provided in the interface section 14 of the substrate processing apparatus 100, but the present invention is not limited thereto. The cleaning and drying processing unit SD1 may be provided in the coating section 12 of the substrate processing apparatus 100, or in the developing section 13, or in other blocks. Alternatively, the cleaning and drying processing unit SD1 is not provided in the substrate processing apparatus 100, but may be provided independently as a substrate cleaning device for cleaning the back surface of the substrate W.

[0196] Fig.21 is a schematic top view of a substrate cleaning unit including a substrate cleaning device. Fig.21 As shown, the substrate cleaning unit 20 includes an indexer section 11 and a cleaning and drying processing section 14A. Fig.21 The indexer section 11 has Figure 1 The same structure as the indexer part 11. In addition, Fig.21 The cleaning and drying processing section 14A has the same Figure 1 The same structure as the cleaning and drying processing unit 14A. Fig.21 The cleaning and drying processing unit 14A can be connected with Figure 1 The cleaning and drying processing section 14A is the same as that of the embodiment but does not include the buffer section 164.

[0197] The cleaning process performed by the substrate cleaning unit 20 is described. In the indexer section 11, a carrier 113 containing a substrate W to be processed is placed on the carrier placement section 111. The transfer mechanism 115 transfers the substrate W from the carrier 113 to the substrate placement sections PASS1 and PASS3 ( Fig.13 ) to transport the substrate W. In addition, the transport mechanism 115 carries the substrate W on the substrate placement parts PASS2 and PASS4 ( Fig.13 ) is transported to the transporter 113.

[0198] In the cleaning and drying processing section 14A, the transport mechanism 141 transports the substrate W placed on the substrate placement section PASS1 or PASS3 to a cleaning and drying processing unit SD1 ( Figure 2 ). At this time, in the cleaning and drying processing unit SD1, the substrate W is cleaned and dried. The transport mechanism 141 transports the substrate W cleaned and dried in the cleaning and drying processing unit SD1 to the substrate placement parts PASS2 and PASS4.

[0199] Here, when the substrate W is transported from the substrate placement parts PASS1 and PASS3 to the cleaning and drying processing part 161, all the cleaning and drying processing units SD1 are in the process of cleaning and drying the substrate W. At this time, any cleaning and drying processing unit SD1 cannot receive the substrate W. Therefore, in such a case, the transport mechanism 141 transports the substrate W to the buffer part 164. After a cleaning and drying processing unit SD1 can receive the substrate W, the transport mechanism 141 transports the substrate W in the buffer part 164 to the cleaning and drying processing unit SD1.

[0200] The transport mechanism 142 transports the substrate W placed on the substrate placement portion PASS1 or PASS3 to a cleaning and drying processing unit SD2 ( Fig.12). At this time, in the cleaning and drying processing unit SD2, the substrate W is cleaned and dried in the same manner as in the cleaning and drying processing unit SD1. The transport mechanism 142 transports the substrate W cleaned and dried in the cleaning and drying processing unit SD2 to the substrate placement parts PASS2 and PASS4.

[0201] Here, when the substrate W is transported from the substrate placement parts PASS1 and PASS3 to the cleaning and drying processing part 162, all the cleaning and drying processing units SD2 are in the process of cleaning and drying the substrate W. At this time, any cleaning and drying processing unit SD2 cannot receive the substrate W. Therefore, in such a case, the transport mechanism 142 transports the substrate W to the buffer part 164. After a certain cleaning and drying processing unit SD2 can receive the substrate W, the transport mechanism 142 transports the substrate W in the buffer part 164 to the cleaning and drying processing unit SD2.

[0202] exist Figure 2 In the example of FIG. 1 , four cleaning and drying processing units SD1 are provided in the cleaning and drying processing section 161, but the present invention is not limited thereto. Three or less cleaning and drying processing units SD1 may be provided in the cleaning and drying processing section 161, or five or more cleaning and drying processing units SD1 may be provided. Fig.12 In the example of FIG. 1 , five cleaning and drying processing units SD2 are provided in the cleaning and drying processing section 162 , but the present invention is not limited thereto. The cleaning and drying processing section 162 may be provided with four or fewer cleaning and drying processing units SD2 , or may be provided with six or more cleaning and drying processing units SD2 .

[0203] (2) In the above embodiment, the eight chuck pins 220 are arranged at intervals of 45 degrees, but the present invention is not limited thereto. The number of the chuck pins 220 and the angular intervals of the arrangement can be arbitrarily determined according to the size of the substrate W. Similarly, in the first embodiment, the eight auxiliary pins 330 are arranged at intervals of 45 degrees, but the present invention is not limited thereto. The number of the auxiliary pins 330 and the angular intervals of the arrangement can be arbitrarily determined according to the size of the substrate W.

[0204] (3) In the first embodiment, the first cleaning mechanism 310 does not have a mechanism for attracting the substrate W, but the present invention is not limited thereto. The first cleaning mechanism 310 of the first embodiment may be provided with the same attraction drive mechanism 315 as in the second embodiment, and the cleaning head 311 may be provided with an opening 311 b.

[0205] Likewise, in the second embodiment, the washing unit 300 does not have the plurality of auxiliary pins 330, but the present invention is not limited thereto. The washing unit 300 of the second embodiment may have the same plurality of auxiliary pins 330 as the first embodiment.

[0206] (4) In the above embodiment, the switch unit 230 switches the chuck pin 220 between the closed state and the open state by means of magnetic force, but the present invention is not limited thereto. The switch unit 230 may switch the chuck pin 220 between the closed state and the open state by means of mechanical structure or electrical control.

[0207] (5) In the above embodiment, the chuck pins 220 of the cleaning and drying processing unit SD1 hold the substrate W on the lower side of the rotating plate 213 in such a manner that the back side of the substrate W faces downward, but the present invention is not limited thereto. The chuck pins 220 may hold the substrate W on the upper side of the rotating plate 213 in such a manner that the back side of the substrate W faces upward. In this case, the cleaning unit 300 is disposed on the upper part of the cleaning and drying processing unit SD1, and cleans the back side of the substrate W through the lower surface of the cleaning head 311.

[0208] (6) In the above embodiment, the exposure device 15 is a dry exposure device, but the present invention is not limited thereto. The exposure device 15 may be, for example, an immersion exposure device. At this time, in the substrate processing apparatus 100, a resist cap film (top coat) may be further formed on the resist film of the substrate W.

[0209] [4] Correspondence between the structural elements of the claims and the elements of the embodiments

[0210] Hereinafter, examples of the correspondence between the constituent elements of the claims and the constituent elements of the embodiments will be described, but the present invention is not limited to the following examples.

[0211] In the above-mentioned embodiment, the substrate W is an example of a substrate, the peripheral portion PE is an example of a peripheral portion, the peripheral end portion 10 is an example of a peripheral end portion, the inclined portions 1 and 2 are examples of a processed surface side inclined portion and a back side inclined portion, respectively, and the end surface 3 is an example of an end surface. The cleaning and drying processing unit SD1 is an example of a substrate cleaning device, the rotation holding unit 200 is an example of a rotation holding unit, the cleaning unit 300 is an example of a cleaning unit, and the rotation axis 212 is an example of a rotation axis.

[0212] The rotating plate 213 is an example of a rotating member, the chuck pin 220 is an example of a holding member, the cleaning head 311 is an example of a cleaning tool, and the head moving mechanism 314 is an example of a moving device. The auxiliary pin 330 is an example of a reaction force generating portion and an abutting member, the inclined surface 333 is an example of an abutting surface, the switching portion 230 is an example of a holding member switching portion, and the outer regions R1 and R2 are examples of the first and second regions, respectively.

[0213] The suction drive mechanism 315 is an example of a reaction force generating unit and a suction unit, the polishing surface 311a is an example of a polishing surface, the opening 311b is an example of an opening, and the cleaning nozzle 313 is an example of a cleaning liquid supply unit. The cleaning brush 321 is an example of a cleaning brush, the processing liquid nozzle 28 is an example of a film forming unit, the edge rinse nozzle 30 is an example of a removal unit, and the substrate processing device 100 is an example of a substrate processing device.

[0214] As each structural element of the claims, other various elements having the structures or functions described in the claims can be used.

[0215] [Industrial Applicability]

[0216] The present invention can be effectively used for cleaning the back surfaces of various substrates.

Claims

1. A substrate cleaning device for cleaning the back side of a substrate, characterized in that: have: a rotation holding unit that holds a substrate and rotates the substrate, and a cleaning unit for cleaning the back side of the substrate held by the rotating holding unit; The rotation holding unit comprises: a rotating member configured to be rotatable about a rotation axis, and a holding member provided on the rotating member having a rotation center that coincides with the rotation center of the substrate in a manner capable of holding the substrate; The cleaning unit comprises: The cleaning tool is configured to remove foreign matter on the back side of the substrate by grinding. a moving device that moves the cleaning tool while pressing the back side of the substrate held by the holding member, and The cleaning brush further cleans the back side of the substrate after or during cleaning by the cleaning tool.

2. The substrate cleaning device according to claim 1, characterized in that: The holding member abuts against the outer peripheral end of the substrate to hold the substrate.

3. The substrate cleaning device according to claim 1 or 2, characterized in that: The cleaning unit further includes a cleaning liquid supply unit configured to supply cleaning liquid to a back surface of the substrate after or during cleaning by the cleaning tool.

4. A substrate processing device, characterized in that: have: a film forming unit that forms a coating film on a processed surface by supplying a coating liquid to the processed surface of the substrate; a removal unit that supplies a removal liquid to the peripheral portion of the substrate, wherein the removal liquid removes the coating film formed by the film forming unit on the peripheral portion of the processed surface of the substrate; as well as The substrate cleaning device according to any one of claims 1 to 3 cleans the back side of the substrate after the coating film on the peripheral edge of the processed surface is removed by the removal unit.

5. A substrate cleaning method for cleaning the back side of a substrate, characterized in that: include: a step of holding the substrate by a rotation holding unit and rotating the substrate, and The step of cleaning the back side of the substrate held by the rotating holding unit by a cleaning unit; The step of holding the substrate and rotating the substrate comprises: a step of holding the substrate by causing a holding member provided on a rotating member having a rotation center that coincides with the rotation center of the substrate, and The step of rotating the rotating member about a rotation axis; The steps for cleaning include: The step of moving the cleaning tool while pressing the back side of the substrate held by the holding member by a moving device, a step of removing foreign matter on the back side of the substrate by grinding with the cleaning tool, and The step of further cleaning the back side of the substrate after or during cleaning by the cleaning tool by using a cleaning brush.

6. A substrate processing method, characterized in that: include: A step of forming a coating film on the processed surface by supplying a coating liquid to the processed surface of the substrate; a step of supplying a removal liquid for removing a coating film formed on the peripheral portion of the processed surface of the substrate to the peripheral portion of the substrate; and A step of cleaning the back side of the substrate after removing the coating film on the peripheral edge of the processed surface by the substrate cleaning method according to claim 5.

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