A solar cell unit, a solar cell, and a manufacturing method

Abstract

The present application provides a solar cell unit, which comprises a solar cell body and a light-transmitting anti-radiation layer arranged on the outer surface of the solar cell body. The light-transmitting anti-radiation layer can prevent radiation waves with a wavelength less than ultraviolet light from entering the solar cell body through the light-transmitting anti-radiation layer and output the energy of the radiation waves in the form of ultraviolet light, infrared light and visible light, thereby prolonging the service life of the solar cell, providing more available light for the solar cell and improving the energy output of the solar cell. The present application also provides a solar cell comprising a plurality of the solar cell units and a method for manufacturing the solar cell.

Description

Technical Field

[0001] The present invention relates to the field of new energy, and in particular to a solar cell unit, a solar cell comprising the solar cell unit, and a method for manufacturing the solar cell. Background Art

[0002] A solar cell is a device that converts solar radiation into electrical energy directly or indirectly through the photoelectric or photochemical effects. After years of technological advancement, solar cells have become widely used in fields such as aerospace and the nuclear industry, providing power for related equipment.

[0003] However, solar cells used in aerospace or nuclear industries have a short service life, which increases the cost of equipment replacement and maintenance.

[0004] Therefore, how to extend the service life of solar cells has become a technical problem that needs to be solved urgently in this field. Summary of the Invention

[0005] The present invention provides a solar cell unit, a solar cell including the solar cell unit, and a method for manufacturing the solar cell. The solar cell can prevent radiation waves with wavelengths shorter than ultraviolet rays from damaging its internal PN junction and convert the energy of the radiation waves into electrical energy, thereby increasing the energy output of the solar cell and extending the service life of the solar cell.

[0006] In order to achieve the above-mentioned purpose, as one aspect of the present invention, a solar cell unit is provided, which includes a solar cell body, and the solar cell unit also includes a light-transmitting anti-radiation layer arranged on at least a portion of the outer surface of the solar cell body, and the light-transmitting anti-radiation layer can prevent radiation waves with a wavelength smaller than the wavelength of ultraviolet rays incident on the light-transmitting anti-radiation layer from passing through the light-transmitting anti-radiation layer and entering the solar cell body.

[0007] Preferably, the light-transmitting anti-radiation layer is provided on the light-collecting surface of the solar cell body, and the light-transmitting anti-radiation layer can convert the radiation waves into light having a wavelength no less than that of ultraviolet rays.

[0008] Preferably, the light-transmitting anti-radiation layer is made of scintillation crystal material.

[0009] Preferably, the scintillation crystal material includes at least one of alkali metal halide scintillation crystal, alkaline earth metal halide scintillation crystal, rare earth metal halide scintillation crystal, and elvalite-type metal halide scintillation crystal.

[0010] Preferably, the chemical formula of the alkali metal halide in the alkali metal halide scintillation crystal is AX or AX:Z, wherein A is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Z is selected from Na + , Ca 2+ 、Sb、Bi、Pb、[CO3] 2- 、Tl + 、Yb 2+ Any of the following;

[0011] The chemical formula of the alkaline earth metal halide in the alkaline earth metal halide scintillation crystal is AX2 or AX2:Eu 2+ , wherein A is selected from any one of Ca, Sr, and Ba, and X is selected from any one of F, Cl, Br, and I;

[0012] The chemical formula of the rare earth metal halide in the rare earth metal halide scintillation crystal is AX3 or AX3:Ce 3+ , wherein A is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc, and X is selected from any one of F, Cl, Br, and I;

[0013] The chemical formula of the potassium cryolite type metal halide in the potassium cryolite type metal halide scintillation crystal is A2BLnX6 or A2BLnX6:Ce 3+ , wherein A is selected from any one of Li, Na, K, Rb, and Cs, B is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Ln is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc.

[0014] Preferably, the solar cell unit further comprises an anti-reflection layer, and the anti-reflection layer is arranged on a side of the light-transmitting anti-radiation layer away from the solar cell body.

[0015] Preferably, the solar cell body includes a photoelectric conversion layer, the photoelectric conversion layer includes an N-type semiconductor portion and a P-type semiconductor portion arranged in a stacked manner, the materials of the N-type semiconductor portion and the P-type semiconductor portion both include gallium arsenide, and the side of the N-type semiconductor portion away from the P-type semiconductor portion or the side of the P-type semiconductor portion away from the N-type semiconductor portion forms a light-collecting surface of the solar cell body.

[0016] Preferably, the solar cell body further comprises a front electrode layer provided on the light-collecting surface, the front electrode layer comprises at least one front electrode, and the light-transmitting anti-radiation layer covers the front electrode layer.

[0017] As a second aspect of the present invention, a solar cell is provided, comprising at least one solar cell unit, wherein the solar cell unit is the solar cell unit described above.

[0018] As a third aspect of the present invention, a method for manufacturing a solar cell is provided, wherein the manufacturing method comprises:

[0019] providing a substrate;

[0020] forming a plurality of solar cell bodies on a substrate;

[0021] forming a light-transmitting anti-radiation layer on the light-collecting surface of each solar cell body, wherein the light-transmitting anti-radiation layer can prevent radiation waves with a wavelength smaller than that of ultraviolet rays incident on the light-transmitting anti-radiation layer from passing through the light-transmitting anti-radiation layer and entering the solar cell body;

[0022] An anti-reflection layer is formed on the surface of the light-transmitting anti-radiation layer facing away from the light-collecting surface.

[0023] The light-transmitting anti-radiation layer of the present invention can prevent radiation waves with wavelengths shorter than ultraviolet rays from passing through the light-transmitting anti-radiation layer and entering the solar cell body, and output the energy of the above-mentioned radiation waves in the form of ultraviolet rays, infrared rays and visible light, thereby extending the life of the solar cell while providing the solar cell with more usable light and improving the energy output of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the following detailed description, they are used to explain the present invention but do not constitute a limitation of the present invention. In the accompanying drawings:

[0025] Figure 1 is a schematic cross-sectional view of a solar cell unit provided by the present invention;

[0026] Figure 2 This is a schematic cross-sectional view of a semi-finished product after a photoelectric conversion layer is formed on a substrate when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0027] Figure 3 This is a schematic cross-sectional view of a semi-finished product after the dielectric reflective layer is manufactured when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0028] Figure 4This is a cross-sectional schematic diagram of a semi-finished product after the back electrode layer is completed when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0029] Figure 5 This is a schematic cross-sectional view of a semi-finished product after etching the edge of a substrate when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0030] Figure 6 This is a cross-sectional schematic diagram of a semi-finished product after the base plate is pressed onto the back electrode layer when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0031] Figure 7 This is a schematic diagram of the process of chemically stripping a sacrificial material layer when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0032] Figure 8 This is a cross-sectional schematic diagram of a semi-finished product after the front electrode is completed when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0033] Figure 9 This is a schematic cross-sectional view of a semi-finished product after a separation and etching process when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0034] Figure 10 This is a schematic cross-sectional view of a semi-finished product after the anti-radiation layer is completed when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0035] Figure 11 This is a cross-sectional schematic diagram of a semi-finished product after the anti-reflection layer is manufactured when a solar cell is manufactured using the manufacturing method provided by the present invention;

[0036] Figure 12 This is a schematic cross-sectional view of a solar cell obtained after the connection through-holes are formed when the solar cell is manufactured using the manufacturing method provided by the present invention;

[0037] Figure 13 The cross-sectional view is a schematic diagram of a preferred method for manufacturing connecting through holes when a solar cell is manufactured using the manufacturing method provided by the present invention.

[0038] Description of Reference Numerals

[0039] 100: Solar cell unit 110: Solar cell body

[0040] 120: Transparent anti-radiation layer 130: Anti-reflection layer

[0041] 140: Photoelectric conversion layer 141: N-type semiconductor portion

[0042] 141a: N-type contact layer 141b: Absorption layer

[0043] 142: P-type semiconductor portion 142a: P-type doped layer

[0044] 142b: P-type contact layer 150: front electrode layer

[0045] 160: Back electrode layer 170: Dielectric reflective layer

[0046] 180: Bottom plate 181: Connection through hole

[0047] 210: substrate 220: sacrificial material layer DETAILED DESCRIPTION

[0048] The following describes the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not intended to limit the present invention.

[0049] Research by the inventors has revealed that one of the main reasons for the shortened lifespan of solar cells in aerospace and nuclear radiation environments is the presence of cosmic rays in space and nuclear radiation in nuclear industrial environments. The wavelengths of these radiation waves are significantly shorter than those of infrared, visible light, and ultraviolet rays. Therefore, existing solar cells are unable to effectively utilize the energy contained in these radiation waves for power generation. When these radiation waves, which cannot be utilized by solar cells, strike the solar cell, they severely damage its various structural components. Long-term exposure to these radiation waves gradually weakens the PN junction in solar cells, significantly shortening the solar cell's lifespan.

[0050] In view of this, as one aspect of the present invention, Figure 1 As shown, a solar cell unit 100 is provided, which includes a solar cell body 110, and is characterized in that the solar cell unit 100 also includes a light-transmitting anti-radiation layer 120 arranged on at least a portion of the outer surface of the solar cell body 110, and the light-transmitting anti-radiation layer 120 can prevent radiation waves with a wavelength smaller than the wavelength of ultraviolet rays incident on the light-transmitting anti-radiation layer 120 from passing through the light-transmitting anti-radiation layer 120 and entering the solar cell body 110.

[0051] The wavelengths of the above-mentioned radiation waves, including cosmic rays and nuclear radiation, are all smaller than ultraviolet rays. Therefore, in the solar cell unit provided by the present invention, a light-transmitting anti-radiation layer 120 is provided to avoid the above-mentioned radiation waves from directly incident on the solar cell unit and damaging the structure of the solar cell unit, thereby extending the service life of the solar cell.

[0052] In order to increase the power generation, as a preferred embodiment, Figure 1As shown, the light-transmitting anti-radiation layer 120 is disposed on the light-collecting surface of the solar cell body 110 , and the light-transmitting anti-radiation layer 120 can convert the radiation waves into light with a wavelength not less than that of ultraviolet rays.

[0053] The solar cell unit provided by the present invention sets a light-transmitting anti-radiation layer 120 on the light-collecting surface of the solar cell body 110, so that the solar cell can convert light with a wavelength higher than ultraviolet rays into electrical energy, thereby increasing the wavelength range that can be used by the solar cell and improving the energy output rate of the solar cell.

[0054] In the present invention, the material of the light-transmitting anti-radiation layer 120 is not specifically limited, as long as it can convert cosmic rays and nuclear radiation into ultraviolet rays, infrared rays and visible light. As a preferred embodiment, the light-transmitting anti-radiation layer 120 is made of scintillation crystal material.

[0055] To further improve the energy output of the solar cell unit, preferably, the scintillation crystal material includes at least one of alkali metal halide scintillation crystals, alkaline earth metal halide scintillation crystals, rare earth metal halide scintillation crystals, and elvalite-type metal halide scintillation crystals.

[0056] After extensive research, the inventors discovered that metal halide scintillator crystals can emit more photons than other scintillator crystal materials under the same high-energy radiation intensity. Furthermore, the main peak wavelengths of the metal halide scintillator luminescence spectrum are located in the ultraviolet, visible, and infrared light bands, which are photons that are effectively absorbed by solar cells.

[0057] Furthermore, the inventors of the present invention have discovered through research that among all metal halides, the above four metal halides have higher light transmittance. Therefore, providing the above four metal halide light-transmitting anti-radiation layer 120 has little effect on the solar light incident efficiency of the cell.

[0058] In the present invention, the compositions of the four metal halide scintillation crystals are not specifically limited. As a preferred embodiment, the four metal halide scintillation crystals are the following substances:

[0059] The chemical formula of the alkali metal halide in the alkali metal halide scintillation crystal is AX or AX:Z (Z doped in AX), wherein A is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Z is selected from Na + , Ca 2 + 、Sb、Bi、Pb、[CO3] 2- 、Tl + 、Yb 2+ Any of the following;

[0060] The chemical formula of the alkaline earth metal halide in the alkaline earth metal halide scintillation crystal is AX2 or AX2:Eu 2+ , wherein A is selected from any one of Ca, Sr, and Ba, and X is selected from any one of F, Cl, Br, and I;

[0061] The chemical formula of the rare earth metal halide in the rare earth metal halide scintillation crystal is AX3 or AX3:Ce 3+ , wherein A is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc, and X is selected from any one of F, Cl, Br, and I;

[0062] The chemical formula of the potassium cryolite type metal halide in the potassium cryolite type metal halide scintillation crystal is A2BLnX6 or A2BLnX6:Ce 3+ , wherein A is selected from any one of Li, Na, K, Rb, and Cs, B is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Ln is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc.

[0063] In order to produce a light-transmitting anti-radiation layer 120 with uniform thickness and higher light conversion efficiency, preferably, the solar cell body 110 of the present invention is a gallium arsenide solar cell.

[0064] Through research, the inventors of the present invention discovered that the crystal plane direction of the solar cell body 110 made of gallium arsenide material is (100). When the above four metal halides are deposited on the surface of the solar cell body 110 using processes such as vapor deposition, the metal halides with a cubic phase crystal structure have a lower lattice mismatch rate with gallium arsenide (approximately 3% to 4%), and therefore are easier to grow uniformly on the surface of the solar cell body 110.

[0065] Moreover, the lattice constant of the (100) crystal plane of the above-mentioned metal halide is close to the lattice constant of the (100) crystal plane or the (-100) crystal plane of gallium arsenide. Therefore, under certain conditions, the growth of a single crystal metal halide film can be achieved on the (100) crystal plane or the (-100) crystal plane of gallium arsenide, thereby manufacturing a single crystal transparent anti-radiation layer 120 film with higher light conversion efficiency, providing more usable light for solar cells, and thereby improving the energy output of solar cells.

[0066] In the present invention, the thickness of the light-transmitting anti-radiation layer 120 is not particularly limited. For example, the thickness of the light-transmitting anti-radiation layer 120 may be between 5 nm and 5000 nm.

[0067] In order to increase the incidence rate of light, preferably, as shown in FIG1 , the solar cell unit 100 further includes an anti-reflection layer 130, and the anti-reflection layer 130 is arranged on the side of the light-transmitting anti-radiation layer 120 away from the solar cell body 110. The solar cell unit provided by the present invention increases the incidence rate of light by arranging the anti-reflection layer 130, thereby increasing the energy output rate of the solar cell. In the technical field of image acquisition and display, the anti-reflection layer 130 is also called an anti-reflection film (or anti-reflection film), which is widely used on the lens surface and display screen surface of a camera to promote light to enter the camera to prevent distortion or to prevent reflection on the display screen surface. In the present invention, an anti-reflection film is applied to the light-collecting surface of the solar cell, and the anti-reflection film (anti-reflection layer 130) is used to enhance transmission and reduce reflection, thereby increasing the amount of light collected by the solar cell.

[0068] In the present invention, the structure of the anti-reflection layer 130 is not specifically limited. For example, the anti-reflection layer 130 may include alternating silicon dioxide layers and tantalum pentoxide layers, with the silicon dioxide layer formed on the surface of the anti-reflection layer 130 near the light-transmitting anti-radiation layer 120. In the present invention, there is no specific limitation on the number of silicon dioxide layers or tantalum pentoxide layers. For example, the anti-reflection layer 130 may include a single silicon dioxide layer or multiple silicon dioxide layers. Similarly, the anti-reflection layer 130 may include a single tantalum pentoxide layer or multiple tantalum pentoxide layers.

[0069] To facilitate understanding of the present invention by those skilled in the art, solar cell body 110 includes photoelectric conversion layer 140. Photoelectric conversion layer 140 includes a stacked N-type semiconductor portion 141 and a P-type semiconductor portion 142. Both N-type semiconductor portion 141 and P-type semiconductor portion 142 are made of gallium arsenide. Specifically, N-type semiconductor portion 141 is made of N-type doped gallium arsenide, and P-type semiconductor portion 141 is made of P-type doped gallium arsenide.

[0070] The side of the N-type semiconductor portion 141 away from the P-type semiconductor portion 142 or the side of the P-type semiconductor portion 142 away from the N-type semiconductor portion 141 forms the light-collecting surface of the solar cell body 110. Figure 2 The figure shows a case where the side surface of the P-type semiconductor portion 142 away from the N-type semiconductor portion 141 is formed as the light-collecting surface of the solar cell body 110 .

[0071] The N-type semiconductor portion 141 includes an N-type contact layer 141a and an absorption layer 141b, while the P-type semiconductor portion 142 includes a P-type contact layer 142b and a P-type doped layer 142a. The absorption layer 141b contacts the P-type doped layer 142a to form a PN junction. When light shines on the PN junction, the PN junction generates current, thereby generating electricity using light energy.

[0072] In the present invention, the thicknesses of the contact layer, the absorption layer 141b, the P-type contact layer 142b and the P-type doping layer 142a are not specifically limited. For example, the thickness of the N-type contact layer 141a can be 1nm to 1000nm; the thickness of the absorption layer 141b can be 0.2μm to 10μm; the thickness of the P-type doping layer 142a can be 1nm to 3000nm; and the thickness of the P-type contact layer 142b can be 1nm to 1000nm.

[0073] In the present invention, the materials of the contact layer, the absorption layer 141b, the P-type contact layer 142b and the P-type doping layer 142a are not specifically limited. For example, the N-type contact layer 141a can be made of at least one arsenide Alx1Iny1Ga 1-x1-y1 As or Al phosphide x2 In y2 Ga 1-x2-y2 P (0≤x1, y1, x2, y2≤1, x1+y1≤1, x2+y2≤1); the absorption layer 141b can be composed of at least one arsenic / phosphide Al x3 In y3 Ga 1-x3-y3 As (0≤x3, y3≤1, x3+y3≤1), and the doped elements in the N-type contact layer 141a and the absorption layer 141b can be at least one of Si, Sn, S, Se or Te; the P-type doping layer 142a can be composed of at least one arsenide Al x4 In y4 Ga 1-x4-y4 As (0≤x4, y4≤1, x4+y4≤1); the P-type contact layer 142b can be composed of at least one arsenide Al x5 In y5 Ga 1-x5-y5 Furthermore, the element doped in the P-type doping layer 142 a and the P-type contact layer 142 b may be at least one of C, Be, Mg, Zn, or Cd.

[0074] The solar cell body 110 further includes a front electrode layer 150 disposed on the light-collecting surface and a back electrode layer 160 disposed on the backlight surface of the photoelectric conversion layer 140 . The front electrode layer 150 includes at least one front electrode, and the light-transmitting anti-radiation layer 120 covers the front electrode layer 150 .

[0075] In the present invention, the pattern of the front electrode is not particularly limited. For example, the front electrode may be a plurality of electrode strips or a plurality of electrode blocks arranged in an array.

[0076] In the present invention, the structure of the back electrode layer 160 is not specifically limited. For example, the back electrode layer 160 may include an adhesion layer, a reflective layer, a prestressed strengthening layer, a barrier layer, and a conductive layer, which are sequentially stacked on the backlight surface of the photoelectric conversion layer 140. The adhesion layer may be made of at least one of the following elements: Ni, Pd, Mo, Pt, Cr, Ti, Ta, and W; the reflective layer may be made of at least one of the following elements: Ag and Al; the prestressed strengthening layer may be made of at least one of the following elements: Ni, Mo, Cr, Pd, Pt, W, Ti, and Ta; the barrier layer may be made of at least one of the following elements: W, Mo, Ta, and Ti; and the conductive layer may be made of at least one of the following elements: Al, Cu, Ni, Ag, Au, and Pt.

[0077] To further extend the service life of the solar cell unit, the solar cell body 110 preferably further includes a dielectric reflective layer 170 disposed between the photoelectric conversion layer 140 and the back electrode layer 160. The dielectric reflective layer 170 is made of an insulating material. In the present invention, the provision of the dielectric reflective layer 170 prevents breakdown between the front electrode and the back electrode layer 160, which could damage the PN junction of the solar cell unit 100, thereby extending the service life of the solar cell.

[0078] Preferably, in order to improve the anti-breakdown effect, the pattern of the dielectric reflective layer 170 and the projection of the pattern of the front electrode on the dielectric reflective layer 170 are overlapped.

[0079] In order not to affect the reflective function of the back electrode, preferably, the dielectric reflective layer 170 has a reflective function.

[0080] In the present invention, the material of the dielectric reflective layer 170 is not particularly limited. For example, the material of the dielectric reflective layer 170 may be insulating ink.

[0081] As a second aspect of the present invention, Figure 12 As shown, the present invention further provides a solar cell, which includes at least one solar cell unit 100 .

[0082] According to the research results of the inventors of the present invention, the solar cell unit 100 includes a light-transmitting and radiation-resistant layer 120 made of the above-mentioned four metal halide scintillating crystal materials, which can extend the life of the solar cell while providing more available light for the solar cell, thereby improving the power generation efficiency of the solar cell.

[0083] To facilitate the connection between the solar cell units 100, preferably, Figure 12 As shown, the solar cell also includes a base plate 180 and an electrical connector. The base plate 180 is fixedly connected to the back electrode layer 160 of the solar cell unit 100. A connecting through hole 181 is formed on the base plate 180 for accommodating the electrical connector. The electrical connector is used to electrically connect two adjacent solar cell units 100.

[0084] In order to improve the connection effect between the electrical connection member and the back electrode layer 160, preferably, as Figure 13 As shown, a portion of the connection through hole 181 may be formed in the back electrode layer 160 or penetrate the back electrode layer 160 , thereby increasing the contact area between the electrical connection member and the back electrode 160 .

[0085] In the present invention, the shape of the connecting through hole 181 is not specifically limited and can be specifically designed according to the type of the electrical connector. For example, when the electrical connector is a wire, the connecting through hole 181 can be a hole-shaped hole. When the electrical connector is a conductive adhesive, the connecting through hole 181 can be a cutting path that passes through the base plate.

[0086] As a third aspect of the present invention, a method for manufacturing a solar cell is provided, the method comprising:

[0087] Provide a substrate 210 (eg Figure 2 shown);

[0088] A plurality of solar cell bodies 110 (eg Figure 9 shown);

[0089] A light-transmitting anti-radiation layer 120 is formed on at least a portion of the outer surface of each solar cell body 110. The light-transmitting anti-radiation layer 120 can prevent radiation waves with wavelengths smaller than the wavelength of ultraviolet rays incident on the light-transmitting anti-radiation layer 120 from passing through the light-transmitting anti-radiation layer 120 and entering the solar cell body 110 (e.g., Figure 10 shown).

[0090] Preferably, when, in the step of forming the light-transmitting anti-radiation layer 120 on at least a portion of the outer surface of each of the solar cell bodies 110, the light-transmitting anti-radiation layer 120 is formed on the light-collecting surface of the solar cell body 110, the method for manufacturing a solar cell further comprises, after the step of forming the light-transmitting anti-radiation layer 120:

[0091] An anti-reflection layer 130 (e.g., Figure 11 shown).

[0092] Preferably, the manufacturing method of the light-transmitting anti-radiation layer 120 includes at least one of physical vapor deposition, molecular beam epitaxy, and chemical vapor deposition, wherein:

[0093] The steps of fabricating the light-transmitting anti-radiation layer 120 by physical vapor deposition include:

[0094] The solar cell body 110 obtained in the previous step is placed in a pulsed laser deposition system, and a single crystal metal halide is used as a target material to grow a light-transmitting anti-radiation layer 120 on the side of the solar cell body 110 where the front electrode is located;

[0095] The steps of fabricating the light-transmitting anti-radiation layer 120 by molecular beam epitaxy include:

[0096] The solar cell body 110 obtained in the previous step is placed in a molecular beam epitaxy system to grow a light-transmitting anti-radiation layer 120 on the side of the solar cell body 110 where the front electrode is located;

[0097] The steps of fabricating the light-transmitting anti-radiation layer 120 by chemical vapor deposition include:

[0098] The solar cell body 110 obtained in the previous step is placed in a chemical vapor deposition system to grow a light-transmitting anti-radiation layer 120 on the side of the solar cell body 110 where the front electrode is located.

[0099] In the present invention, the material of the sacrificial material layer 220 is not specifically limited. For example, the sacrificial material layer 220 may be made of at least one arsenide Al x In y Ga 1-x-y As(0≤x,y≤1,x+y≤1).

[0100] In the present invention, the growth method of the sacrificial material layer 220 and the photoelectric conversion layer 140 is not specifically limited. For example, the growth method of the sacrificial material layer 220 and the photoelectric conversion layer 140 may include: organic metal chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), radio frequency magnetron sputtering (RF-MS), pulsed laser deposition (PLD), remote plasma enhanced chemical vapor deposition (RP-CVD), and the growth temperature range is 200°C to 1100°C.

[0101] In the present invention, the method for manufacturing the dielectric reflective layer 170 is not specifically limited. For example, the method for manufacturing the dielectric reflective layer 170 on the photoelectric conversion layer 140 may include photolithography, screen printing, and inkjet printing.

[0102] In the present invention, the manufacturing process of the back electrode layer 160 is not specifically limited. For example, the manufacturing process of the back electrode layer 160 may include sequentially manufacturing an adhesion layer, a reflective layer, a prestressed layer, a barrier layer, and a conductive layer on the dielectric reflective layer 170 or the photoelectric conversion layer 140. Furthermore, the manufacturing method of the back electrode layer 160 may be electroplating or physical vapor deposition.

[0103] In the present invention, the method for manufacturing the light-transmitting anti-radiation layer 120 is not specifically limited. For example, the method for manufacturing the light-transmitting anti-radiation layer 120 may include physical vapor deposition (PVD), molecular beam epitaxy (MBE), and chemical vapor deposition (CVD).

[0104] In the present invention, the method for manufacturing the anti-reflection layer 130 is not specifically limited. For example, the method for manufacturing the anti-reflection layer 130 may include physical vapor deposition, molecular beam epitaxy, and chemical vapor deposition.

[0105] In the present invention, the method for making the connecting through hole 181 is not specifically limited. For example, the method for making the connecting through hole 181 may include: mechanical perforation or cutting, plasma etching perforation or cutting, laser perforation or cutting.

[0106] To facilitate understanding by those skilled in the art, the present invention provides three optional embodiments for the above solution:

[0107] Example 1

[0108] like Figure 1 As shown, this embodiment provides a solar cell unit 100. Specifically, the solar cell unit 100 is composed, from bottom to top, of a base plate 180, a back electrode layer 160, a dielectric reflective layer 170, a photoelectric conversion layer 140, a front electrode layer 150, a light-transmitting anti-radiation layer 120, and an anti-reflective layer 130. A through-hole structure 510 penetrates the polymer substrate and reaches the interior of the back electrode layer 160. The base plate 180 is made of polyethylene terephthalate (PET); and the dielectric reflective layer 170 is made of insulating ink.

[0109] Furthermore, the back electrode layer 160 is an ohmic contact electrode composed of multiple metal film functional layers. It includes, in order from the photoelectric conversion layer 140 to the backplane 180, an adhesion layer, a reflective layer, a prestressed strengthening layer, a barrier layer, and a conductive layer. The adhesion layer is a 20nm thick nickel film; the reflective layer is a 15nm thick aluminum film; the prestressed strengthening layer is a 400nm thick nickel-magnesium alloy film; the barrier layer is a 30nm thick tungsten film; and the conductive layer is a 3.5μm thick copper film.

[0110] Furthermore, if Figure 2As shown, sacrificial material layer 220 is formed by epitaxial growth of a 30nm thick aluminum arsenide film. Photoelectric conversion layer 140 is composed of multiple arsenic / phosphide film sublayers. From substrate 210 toward photoelectric conversion layer 140, the layers include: an N-type contact layer 141a, an absorption layer 141b, a P-type doped layer 142a, and a P-type contact layer 142b. The N-type contact layer 141a is 0.2μm thick; the absorption layer 141b is 2.8μm thick; the P-type doped layer 142a is 0.3μm thick; and the P-type contact layer 142b is 0.1μm thick.

[0111] Furthermore, the N-type contact layer 141a is composed of an N-type GaAs thin film, and the element doped in the N-type contact layer 141a is Si, and the doping concentration is 1×1019cm -3 ; The absorption layer 141b is made of Al with a thickness of 20nm 0.2 Ga 0.8 The absorption layer 141b is composed of a P thin film sublayer and a GaAs thin film sublayer with a thickness of 2780nm. The doping element of each sublayer in the absorption layer 141b is Si, and the doping concentration is 2×1017cm -3 The P-type doped layer 142a is made of Al 0.2 Ga 0.8 As, the element doped in the P-type doping layer 142a is C, and the doping concentration range is: 5×1018cm -3 to 5×1019cm -3 The P-type contact layer 142b is made of GaAs, and the element doped in the P-type doping layer 142a is C, with a doping concentration range of 5×1019cm -3 to 1×1020cm -3 .

[0112] Furthermore, the front electrode layer 150 has a total thickness of 0.3 μm and is composed of two metal thin films, an aluminum thin film and a gold thin film, with thicknesses of 30 nm and 300 nm respectively.

[0113] Furthermore, the light-transmitting anti-radiation layer 120 is made of a metal halide LuI3:0.04Ce with a thickness of 0.5 μm. 3+ constitute.

[0114] Furthermore, the anti-reflection layer 130 is composed of three groups of silicon dioxide and tantalum pentoxide films alternating with each other. The thicknesses of the six layers from bottom to top are: 60nm (silicon dioxide), 90nm (tantalum pentoxide), 15nm (silicon dioxide), 115nm (tantalum pentoxide), 10nm (silicon dioxide), and 60nm (tantalum pentoxide). The silicon dioxide and tantalum pentoxide films are both produced using ion beam deposition equipment.

[0115] At the same time, this embodiment also provides a method for manufacturing a solar cell, which specifically includes the following steps:

[0116] S1, such as Figure 2 As shown, a substrate with a (100) crystal plane direction is selected and the substrate surface is kept clean. Then, a sacrificial material layer 220 with a thickness of 30 nm is grown on the substrate 210; after that, a photoelectric conversion layer 140 with a thin film solar cell structure is grown;

[0117] S2, such as Figure 3 As shown, a dielectric reflective layer 170 is formed on the photoelectric conversion layer 140;

[0118] S3, such as Figure 4 As shown, a back electrode layer 160 is formed on the dielectric reflective layer 170 and the photoelectric conversion layer 140;

[0119] S4, such as Figure 5 As shown, the photoelectric conversion layer 140 and the sacrificial material layer 220 at the edge of the solar cell body 110 are etched away to form a step structure;

[0120] S5, such as Figure 6 As shown, a base plate 180 is laminated and bonded on the solar cell body 110 having a step structure;

[0121] S6, placing the solar cell body 110 bonded with the bottom plate 180 into a 20% concentration HF solution, chemical etching and stripping process will occur at the location of the sacrificial material layer 220. Figure 7 As shown, as the chemical reaction continues, the sacrificial material layer 220 will be completely etched away by the HF solution. The thin film device consisting of the photoelectric conversion layer 140, the dielectric reflective layer 170, the back electrode layer 160 and the bottom plate 180 will be peeled off from the substrate 210.

[0122] S7, such as Figure 8 As shown, the thin film device after chemical stripping is placed in a direction with the sacrificial material layer 220 facing upward and the base plate 180 facing downward, and a front electrode layer 150 is formed above the stripping surface;

[0123] S8, such as Figure 9 As shown, according to the size of the battery cell, a separation etching process is performed on the peeling surface of the sacrificial material layer 220 to form a plurality of battery cells;

[0124] S9, such as Figure 10 As shown, LuI3:0.04Ce is used on the peeling surface of the sacrificial material layer 220. 3+ The scintillating crystal material is used to make a functional thin film layer, that is, to make a light-transmitting and radiation-resistant layer 120;

[0125] S10, such as Figure 11 As shown, an anti-reflection layer 130 is formed on the light-transmitting anti-radiation layer 120;

[0126] S11, such as Figure 12 As shown, a connecting through hole 181 is made on one side of the bottom plate 180. This prepares for the interconnection of the solar cell units 100 and completes the cutting of the solar cell units 100.

[0127] Furthermore, in step S1, chemical vapor deposition is performed on substrate 210 in the following specific steps: first, a 100 mm × 100 mm square substrate with a (100) crystal plane orientation is placed in a metal organic chemical vapor deposition (MOCVD) system. Then, a sacrificial material layer 220 and a photoelectric conversion layer 140 are sequentially grown on the substrate. The photoelectric conversion layer 140 is prepared by sequentially growing an N-type contact layer 141a, an absorption layer 141b, a P-type doping layer 142a, and a P-type contact layer 142b. The growth temperature of the sacrificial material layer 220 is 650°C and the growth pressure is 200 Torr; the growth temperature of the N-type contact layer 141a is 750°C and the growth pressure is 120 Torr; the growth temperature of the absorption layer 141b is 780°C and the growth pressure is 100 Torr; the growth temperature of the P-type doping layer 142a is 720°C and the growth pressure is 80 Torr; the growth temperature of the P-type contact layer 142b is 700°C and the growth pressure is 80 Torr.

[0128] Furthermore, in step S2 , the method for manufacturing the dielectric reflective layer 170 on the photoelectric conversion layer 140 is inkjet printing.

[0129] Furthermore, in step S3, the production process of the back electrode layer 160 is specifically as follows: using magnetron sputtering equipment (physical vapor deposition equipment) to sequentially produce an adhesion layer, a reflective layer, a prestressed layer, a barrier layer and a conductive layer on the dielectric reflective layer 170 and the photoelectric conversion layer 140.

[0130] Furthermore, in step S9, the anti-radiation layer is formed by physical vapor deposition (PVD), and the specific steps are as follows: the solar cell body 110 after the front electrode layer 150 is formed is placed in a pulsed laser deposition (PLD) system, and a single crystal metal halide LuI3:0.04Ce is used. 3+ As a target material, a layer of LuI3:0.04Ce with a thickness of 0.5 μm is grown on one side of the solar cell body 110 where the front electrode is located. 3+ film.

[0131] Furthermore, in step S11, the connection holes 181 are made by laser perforation or cutting. In order to improve the connection effect between the battery cells 100, as shown in FIG. Figure 13As shown, a portion of the connection through hole 181 may be formed in the back electrode layer 160 or penetrate the back electrode layer 160 .

[0132] Example 2

[0133] like Figure 1 As shown, this embodiment provides a solar cell unit 100. Specifically, the solar cell unit 100 is composed, from bottom to top, of a base plate 180, a back electrode layer 160, a dielectric reflective layer 170, a photoelectric conversion layer 140, a front electrode layer 150, a light-transmitting anti-radiation layer 120, and an anti-reflective layer 130. A through-hole structure 510 penetrates the polymer substrate and reaches the interior of the back electrode layer 160. The base plate 180 is made of polyethylene terephthalate (PET); and the dielectric reflective layer 170 is made of insulating ink.

[0134] Furthermore, the back electrode layer 160 is an ohmic contact electrode composed of multiple metal film functional layers. From the photoelectric conversion layer 140 toward the backplane 180, it includes, in order: an adhesion layer, a reflective layer, a prestressed strengthening layer, a barrier layer, and a conductive layer. The adhesion layer is a 40nm thick nickel film; the reflective layer is a 10nm thick aluminum film; the prestressed strengthening layer is a 300nm thick nickel film; the barrier layer is a 20nm thick tungsten film; and the conductive layer is a 4.5μm thick copper film.

[0135] Furthermore, if Figure 2 As shown, sacrificial material layer 220 is formed by epitaxial growth of a 20nm thick aluminum arsenide film. Photoelectric conversion layer 140 is composed of multiple arsenic / phosphide film sublayers. From substrate 210 toward photoelectric conversion layer 140, the layers comprise: an N-type contact layer 141a, an absorption layer 141b, a P-type doped layer 142a, and a P-type contact layer 142b. The N-type contact layer 141a is 0.15μm thick; the absorption layer 141b is 3.2μm thick; the P-type doped layer 142a is 0.2μm thick; and the P-type contact layer 142b is 80nm thick.

[0136] Furthermore, the N-type contact layer 141a is composed of an N-type GaAs thin film, and the element doped in the N-type contact layer 141a is Si, and the doping concentration is 2×1019cm -3 ; The absorption layer 141b is made of Al with a thickness of 15nm 0.2 Ga 0.7 In 0.1 The absorption layer 141b is composed of a P thin film sublayer and a GaAs thin film sublayer with a thickness of 3185 nm. The doping element of each sublayer in the absorption layer 141b is Si, and the doping concentration is 1.5×1017cm -3 The P-type doped layer 142a is made of Al 0.25 Ga 0.75As, the element doped in the P-type doping layer 142a is C, and the doping concentration range is: 2×1018cm -3 to 4×1019cm -3 The P-type contact layer 142b is made of Ga 0.8 In 0.2 As, the element doped in the P-type doping layer 142a is C, and the doping concentration range is: 3×1019cm -3 to 1×1020cm -3 .

[0137] Furthermore, the front electrode layer 150 has a total thickness of 0.3 μm and is composed of two metal thin films, an aluminum thin film and a gold thin film, with thicknesses of 20 nm and 250 nm respectively.

[0138] Furthermore, the light-transmitting anti-radiation layer 120 is made of a metal halide CaF2:0.02Eu with a thickness of 0.3 μm. 2+ constitute.

[0139] Furthermore, the anti-reflection layer 130 is composed of four groups of silicon dioxide and tantalum pentoxide films alternating with each other. The thicknesses of the eight layers from bottom to top are: 55nm (silicon dioxide), 92nm (tantalum pentoxide), 10nm (silicon dioxide), 105nm (tantalum pentoxide), 8nm (silicon dioxide), 52nm (tantalum pentoxide), 6nm (silicon dioxide), and 36nm (tantalum pentoxide). The silicon dioxide and tantalum pentoxide films are both produced using ion beam deposition equipment.

[0140] At the same time, this embodiment also provides a method for manufacturing a solar cell. The difference between this method and the method for manufacturing a solar cell in Example 1 is that:

[0141] In step S1 , the sacrificial material layer 220 is grown to a thickness of 20 nm;

[0142] In step S9, a CaF2:0.02Eu2+ scintillating crystal material is used to fabricate the light-transmitting anti-radiation layer 120. The light-transmitting anti-radiation layer 120 is fabricated by physical vapor deposition, and the specific steps are as follows: the solar cell body 110 after the front electrode layer 150 is fabricated is placed in a molecular beam epitaxy (MBE) system, and a layer of CaF2:0.02Eu2+ with a thickness of 0.5 μm is epitaxially grown on one side of the solar cell body 110 where the front electrode is located. 2+ film.

[0143] In step S9 , the connection through hole 181 is made by mechanical punching or cutting.

[0144] Example 3

[0145] like Figure 1As shown, this embodiment provides a solar cell unit 100. Specifically, the solar cell unit 100 is composed, from bottom to top, of a base plate 180, a back electrode layer 160, a dielectric reflective layer 170, a photoelectric conversion layer 140, a front electrode layer 150, a light-transmitting anti-radiation layer 120, and an anti-reflective layer 130. A through-hole structure 510 penetrates the polymer substrate and reaches the interior of the back electrode layer 160. The base plate 180 is made of polyethylene terephthalate (PET); and the dielectric reflective layer 170 is made of insulating ink.

[0146] Furthermore, the back electrode layer 160 is an ohmic contact electrode composed of multiple metal film functional layers. It includes, in order from the photoelectric conversion layer 140 to the base plate 180, an adhesion layer, a reflective layer, a prestressed strengthening layer, a barrier layer, and a conductive layer. The adhesion layer is made of a 10nm thick nickel film; the reflective layer is made of a 15nm thick aluminum film; the prestressed strengthening layer is made of a 320nm thick nickel film; the barrier layer is made of a 25nm thick metal W film; and the conductive layer is made of a 5.5μm thick copper film.

[0147] Furthermore, if Figure 2 As shown, sacrificial material layer 220 is formed by epitaxial growth of an 18nm thick aluminum arsenide film. Photoelectric conversion layer 140 is composed of multiple arsenic / phosphide film sublayers. From substrate 210 toward photoelectric conversion layer 140, these layers include, in order: an N-type contact layer 141a, an absorption layer 141b, a P-type doped layer 142a, and a P-type contact layer 142b. The N-type contact layer 141a is 0.11μm thick; the absorption layer 141b is 3.3μm thick; the P-type doped layer 142a is 0.25μm thick; and the P-type contact layer 142b is 90nm thick.

[0148] Furthermore, the N-type contact layer 141a is composed of an N-type GaAs thin film, and the element doped in the N-type contact layer 141a is Si, and the doping concentration is 3×1019cm -3 The absorption layer 141b is made of Al with a thickness of 15nm 0.2 Ga 0.7 In 0.1 The absorption layer 141b is composed of a P thin film sublayer and a GaAs thin film sublayer with a thickness of 3285 nm. The doping element of each sublayer in the absorption layer 141b is Si, and the doping concentration is 1.2×1017 cm -3 The P-type doping layer 142a is composed of Al0.4Ga0.6As. The element doped in the P-type doping layer 142a is C, and the doping concentration range is: 2×1018cm -3 to 4×1019cm -3The P-type contact layer 142b is composed of Ga0.95In0.05As, and the element doped in the P-type doping layer 142a is C, with a doping concentration range of 2.5×1019cm -3 to 1×1020cm -3 .

[0149] Furthermore, the front electrode layer 150 has a total thickness of 0.28 μm and is composed of two metal thin films, an aluminum thin film and a gold thin film, with thicknesses of 20 nm and 230 nm respectively.

[0150] Furthermore, the light-transmitting anti-radiation layer 120 is made of NaI with a thickness of 0.4 μm.

[0151] Furthermore, the anti-reflection layer 130 is composed of five groups of silicon dioxide and tantalum pentoxide films alternating with each other. The thicknesses of the ten layers from bottom to top are: 55nm (silicon dioxide), 92nm (tantalum pentoxide), 10nm (silicon dioxide), 105nm (tantalum pentoxide), 8nm (silicon dioxide), 52nm (tantalum pentoxide), 6nm (silicon dioxide), 36nm (tantalum pentoxide), 4nm (silicon dioxide), and 28nm (tantalum pentoxide). The silicon dioxide and tantalum pentoxide films are both produced using plasma enhanced chemical vapor deposition (PECVD) equipment.

[0152] At the same time, this embodiment also provides a method for manufacturing a solar cell. The difference between this method and the method for manufacturing a solar cell in Example 1 is that:

[0153] In step S1 , the sacrificial material layer 220 is grown to a thickness of 18 nm; the sacrificial material layer 220 is grown at a temperature of 680° C.; and the absorption layer 141 b is grown at a temperature of 790° C.

[0154] In step S2 , the dielectric reflective layer 170 is formed on the photoelectric conversion layer 140 by screen printing.

[0155] In step S9, a NaI scintillating crystal material is used to form the light-transmitting anti-radiation layer 120. The light-transmitting anti-radiation layer 120 is formed using chemical vapor deposition (CVD). The specific steps are as follows: the solar cell body 110 after the front electrode layer 150 is formed is placed in a CVD system, and a 0.4 μm thick NaI thin film is grown on the side of the solar cell body 110 where the front electrode is located.

[0156] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A solar cell unit, comprising a solar cell body, characterized in that: The solar cell unit also includes a light-transmitting anti-radiation layer arranged on at least a portion of the outer surface of the solar cell body, the light-transmitting anti-radiation layer can prevent radiation waves with a wavelength less than the wavelength of ultraviolet rays incident on the light-transmitting anti-radiation layer from passing through the light-transmitting anti-radiation layer and entering the solar cell body, and output the energy of the above-mentioned radiation waves in the form of ultraviolet rays, infrared rays and visible light, the light-transmitting anti-radiation layer is arranged on the light-collecting surface of the solar cell body, and the light-transmitting anti-radiation layer is made of scintillation crystal material, the solar cell body includes a photoelectric conversion layer, the photoelectric conversion layer includes a stacked N-type semiconductor part and a P-type semiconductor part, the side of the N-type semiconductor part away from the P-type semiconductor part or the side of the P-type semiconductor part away from the N-type semiconductor part is formed as the light-collecting surface of the solar cell body, a front electrode layer is arranged on the light-collecting surface of the solar cell body, the light-transmitting anti-radiation layer covers the front electrode layer, the solar cell unit also includes an anti-reflection layer, the anti-reflection layer is arranged on the side of the light-transmitting anti-radiation layer away from the solar cell body.

2. The solar cell unit according to claim 1, wherein The scintillation crystal material includes at least one of alkali metal halide scintillation crystal, alkaline earth metal halide scintillation crystal, rare earth metal halide scintillation crystal, and elvalite-type metal halide scintillation crystal.

3. The solar cell unit according to claim 2, wherein: The chemical formula of the alkali metal halide in the alkali metal halide scintillation crystal is AX or AX:Z, wherein A is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Z is selected from Na + , Ca 2+ 、Sb、Bi、Pb、[CO3] 2- 、T 1+ 、Yb 2+ Any of the following; The chemical formula of the alkaline earth metal halide in the alkaline earth metal halide scintillation crystal is AX2 or AX2:Eu 2+ , wherein A is selected from any one of Ca, Sr, and Ba, and X is selected from any one of F, Cl, Br, and I; The chemical formula of the rare earth metal halide in the rare earth metal halide scintillation crystal is AX3 or AX3:Ce 3+ , wherein A is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc, and X is selected from any one of F, Cl, Br, and I; The chemical formula of the potassium cryolite type metal halide in the potassium cryolite type metal halide scintillation crystal is A2BLnX6 or A2BLnX6:Ce 3+ , wherein A is selected from any one of Li, Na, K, Rb, and Cs, B is selected from any one of Li, Na, K, Rb, and Cs, X is selected from any one of F, Cl, Br, and I, and Ln is selected from any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc.

4. A solar cell comprising at least one solar cell unit, characterized in that: The solar cell unit is the solar cell unit according to any one of claims 1 to 3.

5. A method for manufacturing a solar cell, characterized in that: The manufacturing method comprises: providing a substrate; forming a plurality of solar cell bodies on a substrate; The solar cell body includes a photoelectric conversion layer, which includes an N-type semiconductor part and a P-type semiconductor part arranged in a stacked manner. The side of the N-type semiconductor part away from the P-type semiconductor part or the side of the P-type semiconductor part away from the N-type semiconductor part forms the light-collecting surface of the solar cell body, and a front electrode layer is provided on the light-collecting surface of the solar cell body; a light-transmitting anti-radiation layer is formed on the light-collecting surface of each solar cell body, and the light-transmitting anti-radiation layer is made of a scintillation crystal material, and the light-transmitting anti-radiation layer can prevent radiation waves with a wavelength smaller than that of ultraviolet rays incident on the light-transmitting anti-radiation layer from passing through the light-transmitting anti-radiation layer and entering the solar cell body; and outputs the energy of the above-mentioned radiation waves in the form of ultraviolet rays, infrared rays and visible light, and the light-transmitting anti-radiation layer covers the front electrode layer; and an anti-reflection layer is formed on the surface of the light-transmitting anti-radiation layer away from the light-collecting surface.

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