Substrate carrier apparatus, substrate processing apparatus, and method of conditioning susceptor temperature

Abstract

An example of a substrate processing apparatus includes a substrate carrier apparatus including a shaft, at least one carrier arm fixed to the shaft and configured to rotate as the shaft rotates, and at least one thermometer fixed to the carrier arm, a susceptor, a heater that heats the susceptor, a temperature regulator that controls the heater, and a control unit that acquires a measured temperature of the susceptor obtained by the thermometer by bringing the carrier arm close to the susceptor, the measured temperature being a surface temperature, and controls the temperature regulator.

Description

Technical Field

[0001] The examples described relate to substrate carrier equipment, substrate processing equipment, and methods for regulating substrate temperature. Background Technology

[0002] One of the wafer processing conditions is the temperature setting of the substrate heater (hereinafter sometimes simply referred to as the heater). The heater temperature is set to bring the temperature of the substrate on the substrate to a desired temperature. To set the substrate temperature to the desired temperature, the heater is controlled based on a reference value with an offset.

[0003] Determining the offset can take a long time. For example, it involves performing a series of operations, including raising the pressure in the chamber to atmospheric pressure, lowering the temperature of the base, opening the chamber, placing a temperature measuring chip with an embedded thermometer on the base, closing the chamber, raising the temperature of the base, lowering the pressure in the chamber to near vacuum, measuring the temperature of the temperature measuring chip, and removing the temperature measuring chip from the chamber.

[0004] The difference between the measured temperature of the temperature-measuring wafer and the desired wafer processing temperature specified in the recipe is recorded as offset data. When processing the product substrate, the desired wafer processing temperature is adjusted based on this offset data.

[0005] However, the method described above for measuring the temperature of the wafer involves long downtime for opening and closing the chamber and raising and lowering the temperature within it, and therefore cannot be performed frequently. To address this, the offset data is updated by utilizing the opportunity of heater replacement. Thus, even if the difference between the heater temperature and the substrate temperature changes over time as the equipment's condition varies, the offset data remains in use. Consequently, the substrate may be processed at undesirable temperatures for extended periods. Summary of the Invention

[0006] Some examples described herein can solve the above problems. These examples can provide substrate carrier devices, substrate processing devices, and methods for adjusting substrate temperature, allowing the temperature of a substrate to be set at a desired temperature.

[0007] In some examples, the substrate carrier device includes a shaft, at least one carrier arm fixed to the shaft and configured to rotate with the shaft, and at least one thermometer fixed to the carrier arm. Attached Figure Description

[0008] Figure 1 This is a plan view showing an example of a substrate processing device;

[0009] Figure 2 This is a side view showing an example of a substrate processing device;

[0010] Figure 3This is a cross-sectional view of the carrier arm;

[0011] Figure 4 This is a plan view showing an example of a carrier arm;

[0012] Figure 5 An example showing the arrangement of thermometers;

[0013] Figure 6 An example of an arrangement for rotating the shaft;

[0014] Figure 7 It is a flowchart; and

[0015] Figure 8 It is a diagram of the data obtained through mapping. Detailed Implementation

[0016] Referring to the accompanying drawings, the substrate carrier equipment, substrate processing equipment, and method for adjusting the substrate temperature are described. Identical or corresponding components will be indicated by the same reference numerals, and redundant descriptions may be omitted.

[0017] Figure 1 This is a plan view illustrating an example configuration of a substrate processing apparatus. The substrate processing apparatus includes bases 10, 12, 14, and 16. The substrate processing apparatus includes a substrate carrier device 20 for supplying substrates to and removing substrates from bases 10, 12, 14, and 16. The substrate carrier device 20 may include a shaft 20A and carrier arms 20B, 20C, 20D, and 20E fixed to the shaft 20A and rotating with the shaft 20A. The substrate carrier device 20 has at least one carrier arm. As the shaft 20A rotates, the carrier arms 20B, 20C, 20D, and 20E rotate about the shaft 20A. The carrier arms 20B, 20C, 20D, and 20E move in the xy plane.

[0018] The above arrangement is enclosed within housing 22. For example, the substrate processing apparatus may be a four-chamber module (QCM). The QCM can perform the same processing on four substrates on four bases 10, 12, 14, and 16 maintained at the same temperature. The processing performed on the substrates may be, for example, film deposition using plasma, etching using plasma, or film modification by plasma.

[0019] The wafer processing chamber 30 is located adjacent to the substrate processing equipment. In the wafer processing chamber 30, an arm 32 carries a substrate. For example, the substrate held by the arm 32 can be supplied to the substrate processing equipment, or the arm 32 can be used to remove the substrate from inside the substrate processing equipment.

[0020] Figure 2This is a side view illustrating an example configuration of a substrate processing apparatus. Thermometers 40, 42, 44, 46, and 48 are fixed to carrier arm 20E. Thermometers 40, 42, 44, 46, and 48 can be, for example, thermocouples or resistance temperature sensors. At least one thermometer can be fixed to carrier arm 20E. In another example, a different number of thermometers can be used. As described above, the substrate carrier apparatus has shaft 20A, carrier arms 20B, 20C, 20D, and 20E, and thermometers 40, 42, 44, 46, and 48.

[0021] Figure 1 Only one of the carrier arms 20B, 20C, 20D, and 20E shown can be equipped with a thermometer. Figure 2 In the examples of carrier arms 20B, 20C, 20D, and 20E shown, only carrier arm 20E has a thermometer fixed thereon. In another example, all of the multiple carrier arms may be equipped with thermometers. Multiple thermometers may be mounted on one carrier arm, or a single thermometer may be mounted on one carrier arm.

[0022] Figure 2 A base 10 and a heater 10a fixed to the base 10 are shown. The heater 10a can be positioned anywhere for heating the base 10. For example, the heater 10a can be embedded in the base 10 or positioned on the lower surface of the base 10. All bases 10, 12, 14, and 16 may be equipped with heaters. The heater 10a is controlled by a temperature regulator 54. The temperature regulator 54 receives a command regarding the temperature of the heater 10a from a unique platform controller (UPC) 52 and energizes the heater 10a according to the command.

[0023] In one example, when the carrier arm 20E is directly above the base 10, all thermometers 40, 42, 44, 46, and 48 fixed to the carrier arm 20E are directly above the base 10. Similarly, when the carrier arm 20E is directly above the bases 12, 14, or 16, all thermometers 40, 42, 44, 46, and 48 are directly above the bases 12, 14, or 16.

[0024] Transmission unit 50 is connected to thermometers 40, 42, 44, 46, and 48. In one example, transmission unit 50 converts the measurement results from thermometers 40, 42, 44, 46, and 48 into digital data and sends the digital data to a control unit. As an example of a control unit, a transmission module controller (TMC) 33 and a UPC 52 are provided. In one example, transmission unit 50 sends digital data about the measurement results (hereinafter sometimes referred to as the measured temperature) to the TMC 33 wirelessly. The TMC 33 transmits the digital data about the measurement results to the UPC 52. The UPC 52 updates the offset of the desired wafer processing temperature according to the recipe based on the measured temperature and the temperature of heater 10a at the time when the measured temperature is obtained, so that the surface temperature of the base 10 is close to the target temperature. The UPC 52 issues a command including the desired wafer processing temperature to the temperature regulator 54 according to the recipe and the updated offset. The temperature regulator 54 can then be controlled with the updated offset.

[0025] Figure 3 This is a cross-sectional view of the carrier arm 20E. Thermometers 40, 42, 44, 46, and 48 may be exposed on the rear surface of the carrier arm 20E. In another example, thermometers 40, 42, 44, 46, and 48 may protrude from the rear surface of the carrier arm 20E toward the base 10. In yet another example, a recess may be formed in the rear surface of the carrier arm 20E, and thermometers 40, 42, 44, 46, and 48 may protrude from the recess.

[0026] Figure 4 This is a plan view illustrating an example configuration of the carrier arm. The carrier arm 20E includes a main body 20a connected to a shaft 20A, a first branch 20b, a second branch 20c, and an extension 20d. The first branch 20b and the second branch 20c are portions branching from the main body 20a. The extension 20d is connected to the main body 20a and is located further from the shaft 20A than the main body 20a. In one example, the extension 20d is adjacent to the connection between the main body 20a and the first branch 20b. When the carrier arm 20E rotates, the main body 20a and the extension 20d can pass directly above the bases 10, 12, 14, and 16. Figure 4 The main body 20a and extension 20d are shown, located directly above the base 14 during the rotation of the carrier arm 20E.

[0027] Figure 5 An example arrangement of thermometers 40, 42, 44, 46, and 48 is shown. Thermometers 40, 42, 44, 46, and 48, exposed on the rear surface of the carrier arm 20E, should not be visible in this plan view. Figure 5The positions of thermometers 40, 42, 44, 46, and 48 exposed on the rear surface of the carrier arm 20E are shown for reference. Thermometers 42, 44, 46, and 48 can be fixed to the main body 20a and exposed on the rear surface of the main body 20a, and thermometer 40 can be fixed to the extension 20d and exposed on the rear surface of the extension 20d. Figure 5 The dashed lines in the diagram illustrate an example of the trajectories of thermometers 40, 42, 44, 46, and 48 during the rotation of the carrier arm 20E. Thermometers 40, 42, 44, 46, and 48 pass directly above the base 14, allowing the temperature of the base 14 to be measured at the locations indicated by the five dashed lines.

[0028] Figure 6 An example arrangement for rotating shaft 20A is shown. Shaft 20A extends through bearings 62, with a magnetic seal 64 inserted between them. Bearings 62 can be held in chamber 60. A vacuum exists in chamber 60, and the ambient pressure of chamber 60 is atmospheric pressure. When motor 61 rotates shaft 20A in response to a command from TMC 33, the carrier arm rotates with respect to the pressure difference between the outside and inside of chamber 60 maintained by the magnetic seal 64.

[0029] Figure 7 This is a flowchart illustrating an example of a method for adjusting the substrate temperature. First, in step S1, a first substrate process is performed. The substrate process may include, for example, placing the substrate on substrates 10, 12, 14, and 16 using carrier arms 20B, 20C, 20D, and 20E; performing processing on the substrate; and removing the substrate from substrates 10, 12, 14, and 16 using carrier arms 20B, 20C, 20D, and 20E. For the substrate process, temperature regulator 54 sets heater 10a to a predetermined temperature in response to a command from UPC 52. More specifically, a command including a desired wafer processing temperature according to the recipe, having a predetermined offset intended to bring the surface temperature of substrate 10 close to a target temperature, is sent to temperature regulator 54. Based on the offset “desired wafer processing temperature according to the recipe,” temperature regulator 54 raises the temperature of heater 10a. For example, the substrate process may be performed on all four substrates 10, 12, 14, and 16 at the same temperature.

[0030] Then, the process proceeds to step S2. In step S2, the surface temperatures of bases 10, 12, 14, and 16 are measured using at least one thermometer fixed to the carrier arm 20E. In one example, the surface temperatures of multiple bases 10, 12, 14, and 16 can be measured while the carrier arm 20E is rotating. The rotation speed of the carrier arm 20E can be less than 3.53 seconds / 180°. To improve the accuracy of temperature measurement, the rotation speed of the carrier arm can be equal to or less than 10 seconds / 180°. The reduced rotation speed of the carrier arm provides accurate temperature measurement. Therefore, the rotation speed of the carrier arm 20E can be reduced as the difference between the measured temperature obtained by the thermometer and the target temperature increases. In the measurement of the surface temperature of the bases, the distance between the thermometers 40, 42, 44, 46, and 48 and the base can be equal to or less than 4 mm.

[0031] In another example, the surface temperature of the base can be measured by bringing the carrier arm 20E close to the base. More specifically, the temperature can be measured by bringing the carrier arm close to the base without rotating the carrier arm. This measurement method can help to speed up the measurement process.

[0032] If the surface temperature of the base is measured while the carrier arm is rotating, the surface temperature of the base can be mapped. Figure 8 It is a diagram of the data obtained through mapping. Figure 8 In the example shown, five thermometers read different surface temperatures.

[0033] If the thermometer is fixed only on carrier arm 20E, the surface temperature of all bases can be measured by rotating carrier arm 20E 360°. On the other hand, if the thermometer is fixed on all carrier arms 20B, 20C, 20D and 20E, the surface temperature of all bases can be measured by rotating the carrier arm only 90°.

[0034] In measuring the surface temperature of a base without rotating the carrier arm, the surface temperature of the base is measured by bringing the carrier arm close to the base, and then rotating the carrier arm before measuring the surface temperature of another base. If the thermometer is fixed to all carrier arms 20B, 20C, 20D, and 20E, the surface temperature of all bases can be measured simultaneously by bringing the carrier arms close to different bases at the same time.

[0035] In one example, if the measured temperature does not fall within the predetermined range, the process stops and an exception notification can be issued. For instance, if the temperature measurement system malfunctions or the base develops a crack, the process stops and the user is notified of the exception so that the problem can be resolved.

[0036] Then, the process proceeds to step S3. In step S3, the UPC52 compares the measured temperature from the thermometer with a predetermined target temperature. For example, the target temperature could be the required wafer processing temperature according to the recipe. In one example, the UPC52 determines whether the difference between the measured temperature and the target temperature is greater than a predetermined value. For example, if the measured temperature is 455°C, the target temperature is 450°C, and the maximum allowable difference is ±2°C, then the UPC52 determines that the offset data for the target temperature needs to be updated. The offset data can be stored in a parameter file within the configuration file of the UPC52.

[0037] Then, the process proceeds to step S4. If it is determined in step S3 that the offset data needs to be updated, the offset data is updated in step S4. In the example above, since the measured temperature is 455°C and the target temperature is 450°C, the offset data is updated to "-5°C". In this example, the condition for updating the offset data is that the difference between the measured temperature and the target temperature is greater than a predetermined value. However, in another example, the offset data can be updated as long as the measured temperature is not equal to the target temperature.

[0038] exist Figure 7 In the diagram, a series of processes in steps S2, S3, and S4 are shown as the update process 1 for the offset data.

[0039] Then, the process proceeds to step S5. In step S5, the second substrate process is performed. Except for the temperature of heater 10a, the substrate process can be the same as the first substrate process. In the second substrate process, since the target temperature is 450°C and the offset data is -5°C, UPC52 instructs temperature regulator 54 to set the temperature of heater 10a to 445°C. Then, the substrate temperature becomes 445°C, and the measured temperature is closer to 450°C, which is the target temperature.

[0040] As described above, the control details of heater 10a are modified to reduce the difference between the measured temperature from the thermometer and the target temperature. In this example, the control details of the heater are modified when the difference exceeds a predetermined value. Therefore, processing complexity due to frequent modifications to the control details of the heater can be avoided. Updating the offset data is merely an example of how the control details of the heater can be modified, and the control details of the heater can be modified in other ways.

[0041] After the second substrate process is completed, the update process for the offset data is performed again in steps S6, S7, and S8. The details of steps S6, S7, and S8 are essentially the same as those of steps S2, S3, and S4. In this update process (referred to as update process 2), the offset data is updated if necessary.

[0042] In step S9, the third substrate process is performed. Except for the ability to modify the heater temperature, the details of the substrate process can be the same as those of the first substrate process. During the third substrate process, UPC52 sends a command to the temperature regulator 54 reflecting the latest offset data. The substrate temperature then approaches 450°C, which is the target temperature.

[0043] Compared to determining offset data involving the placement of a dedicated temperature measurement wafer on a substrate, measuring the surface temperature of the substrate between multiple substrate processes is relatively straightforward. The process for updating the offset data can be performed between each substrate process or at a specific moment between substrate processes.

[0044] In order to maintain Figure 6 The magnetic seal 64 shown, for example, requires the substrate processing equipment to rotate the shaft 20A at regular intervals, in addition to the opportunity to rotate the shaft 20A to carry the substrate. This regular-interval rotation of the shaft 20A can be considered a maintenance operation. The maintenance operation involves rotating the shaft 20A to rotate the carrier arms 20B, 20C, 20D, and 20E, which are fixed to the shaft 20A, while the carrier arms 20B, 20C, 20D, and 20E are not carrying the substrate. This maintenance operation involving rotating the shaft 20A at regular intervals suppresses the deterioration of the magnetic seal 64.

[0045] In step S10, during one of the regular intervals of rotation of shaft 20A, the surface temperature of the base is measured using a thermometer fixed to the carrier arm. In other words, the surface temperature of the base is measured during maintenance operations. In steps S11 and S12, if necessary, the offset data is updated in the same manner as update processes 1 and 2 described above. In one example, this update process, including steps S10, S11, and S12 (referred to as update process 3), ends during maintenance operations.

[0046] The update process 3 is performed in parallel with the maintenance operation, thereby preventing delays in the substrate process due to the update process. In step S13, a fourth substrate process reflecting the latest offset data is executed.

[0047] According to the method of adjusting the substrate temperature by updating the offset data at an appropriate frequency, the actual temperature of the processed substrate and the required wafer processing temperature according to the formula can be made to be consistent with or close to each other.

[0048] Figure 2 The TMC33 and UPC52 shown serve as a control unit that acquires the measured temperature of the base (which is the surface temperature) obtained by the thermometer and controls the temperature regulator 54. The control unit can be a single integrated controller.

Claims

1. A substrate carrier apparatus comprising: a shaft configured to be disposed within a substrate processing apparatus; at least one carrier arm fixed to the shaft and configured to rotate with the shaft to pass directly above a susceptor of the substrate processing apparatus; and at least one thermometer fixed to the at least one carrier arm; wherein the thermometer is exposed on a rear surface of the carrier arm and protrudes from the rear surface to obtain a measured temperature of the susceptor of the substrate processing apparatus located below the carrier arm while the at least one thermometer rotates with the at least one carrier arm. The carrier arm is one of a plurality of carrier arms, and the thermometer is provided on one of the plurality of carrier arms.

2. The substrate carrier apparatus of claim 1, wherein, The carrier arm is one of a plurality of carrier arms, and the plurality of carrier arms are all provided with the thermometer.

3. The substrate carrier apparatus of claim 1, wherein, The thermometer is one of a plurality of thermometers, and the plurality of thermometers are fixed to each of the carrier arms.

4. The substrate carrier apparatus of claim 1, wherein, The carrier arm includes a main portion connected to the shaft, a branch portion branched from the main portion, and an extension portion connected to the main portion and located farther from the shaft than the main portion, 5. The substrate carrier apparatus of claim 1, wherein, The thermometer is one of a plurality of thermometers, and The thermometer is fixed to the main portion and the extension portion. The thermometer is a thermocouple or a resistance temperature sensor.

6. The substrate carrier apparatus of any of claims 1-4, wherein, 7. A substrate processing apparatus comprising: a substrate carrier apparatus including a shaft configured to be disposed within the substrate processing apparatus, at least one carrier arm fixed to the shaft and configured to rotate with the shaft to pass directly above a susceptor of the substrate processing apparatus, and at least one thermometer fixed to the at least one carrier arm; a susceptor; a heater configured to heat the susceptor; a temperature regulator configured to control the heater; and a control unit configured to cause the at least one carrier arm to rotate to pass directly above the susceptor and to obtain a measured temperature of the susceptor while the at least one thermometer rotates with the at least one carrier arm and to control the temperature regulator based on the measured temperature and a temperature of the heater at a time when the measured temperature is obtained, the measured temperature being a surface temperature. The substrate processing apparatus includes a transmission unit that converts a measurement result from the thermometer into digital data and transmits the digital data to the control unit. The control unit controls the temperature regulator based on the measured temperature and the temperature of the heater at the time when the measured temperature is obtained with an updated offset to cause the surface temperature to approach a target temperature.

8. The substrate processing apparatus of claim 7, wherein, 10. A method of adjusting a temperature of a susceptor of a substrate processing apparatus, comprising:

9. The substrate processing apparatus of claim 7, wherein, measuring a surface temperature of the susceptor with at least one thermometer fixed to a carrier arm, wherein the carrier arm is fixed to a shaft located within the substrate processing apparatus and rotates with the shaft, and the surface temperature is measured while the at least one thermometer rotates with the carrier arm; and modifying a detail of control of a heater that heats the susceptor to reduce a difference between a measured temperature obtained by the thermometer and a target temperature. The control is modified if the difference is greater than a predetermined value. The rotation speed of the carrier arm is reduced as the difference between the measured temperature obtained by the thermometer and the target temperature increases.

11. The method of claim 10, wherein, In the measurement of the surface temperature, a mapping of the surface temperature of the susceptor is performed.

12. The method of claim 10, wherein, In the measurement of the surface temperature, the carrier arm is brought close to the susceptor.

13. The method of claim 10, wherein, ​ 14. The method of claim 10, wherein, ​ 15. The method of claim 10, wherein, In the modification of the control, an offset used to control the heater is updated.

16. The method of claim any one of claims 10 to 15, wherein, The method further includes performing a plurality of substrate processes, the substrate processes including placing a substrate on the susceptor with the carrier arm, performing processing on the substrate, and removing the substrate from the susceptor with the carrier arm; and The measurement of the surface temperature is performed between substrate processes.

17. The method of claim 10, wherein, An exception notification is issued if the measured temperature is not within a predetermined range.

18. The method of claim 10, wherein, The method further includes performing a maintenance operation involving rotating a shaft extending through a bearing to rotate the carrier arm fixed to the shaft in a state in which the carrier arm is not carrying a substrate, a magnetic seal being interposed between the shaft and the bearing; and The measurement of the surface temperature is performed during the maintenance operation.

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