A method and device for simulating integrated circuit devices

Abstract

The present application provides a method and apparatus for simulating an integrated circuit device, the method comprising: determining at least one temperature interval according to historical simulation results of the integrated circuit device; extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain a current semiconductor device model; when the integrated circuit device needs to be simulated again, receiving a target temperature required for the simulation, determining a target temperature interval to which the target temperature belongs and a sub-device model corresponding to the target temperature interval in the current semiconductor device model; simulating the integrated circuit device using the corresponding sub-device model; thus, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range the temperature is in, a suitable sub-device model can be found to simulate the integrated circuit device to ensure simulation accuracy.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor device technology, and in particular, relates to a method and device for simulating an integrated circuit device. Background Art

[0002] With the development of integrated circuit technology and its increasingly widespread application, the requirements of high reliability, high performance and low cost must be considered when designing integrated circuits.

[0003] At present, integrated circuits are generally simulated and tested using device models in IC CAD simulation software. In ICCAD software, the MOSFET device model is the key link between integrated circuit device design and the functions and performance of integrated circuit device products. As the size of integrated devices becomes smaller and smaller, the scale of integration becomes larger and larger, and the integrated circuit process becomes more and more complex, the accuracy requirements for device models are also getting higher and higher.

[0004] With the application of integrated circuits in extremely high and low temperature fields, semiconductor device models need to be able to be simulated in a wider temperature range. However, the device models in the existing technology are generally only applicable within a certain temperature range. If the temperature range is exceeded, the simulation accuracy may not meet the simulation requirements. Summary of the invention

[0005] In response to the problems existing in the prior art, the embodiments of the present application provide a method and apparatus for simulating integrated circuit devices, which are used to solve the technical problem that the semiconductor device model in the prior art can only be applied within a certain temperature range, resulting in the simulation accuracy cannot be guaranteed when the integrated circuit device is simulated within a wider temperature range.

[0006] The present application provides a method for simulating an integrated circuit device, the method comprising:

[0007] Determine at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device;

[0008] For different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters;

[0009] Merging the sub-device models to obtain a current semiconductor device model;

[0010] When the integrated circuit device needs to be simulated again, receiving the target temperature required for the simulation, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model;

[0011] The integrated circuit device is simulated using the corresponding sub-device model.

[0012] Optionally, after establishing the corresponding sub-device model according to the model parameters, the method further includes:

[0013] A mapping table is generated according to each of the temperature intervals and the sub-component models corresponding to each of the temperature intervals; the mapping table stores the corresponding relationship between the temperature intervals and the sub-component models.

[0014] Optionally, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model includes:

[0015] Traversing the mapping table, comparing the target temperature with each temperature interval in the mapping table one by one, and determining the target temperature interval to which the target temperature belongs;

[0016] The sub-device model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-device model in the current semiconductor device model.

[0017] Optionally, determining at least one temperature interval according to historical simulation results of the integrated circuit device includes:

[0018] The at least one temperature interval is determined according to the degree of fit between the historical simulation results and the performance test data.

[0019] Optionally, extracting corresponding device model parameters for different temperature intervals and establishing corresponding sub-device models according to the model parameters includes:

[0020] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0021] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0022] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0023] The present invention also provides a device for simulating an integrated circuit device, the device comprising:

[0024] A first determining unit is used to determine at least one temperature interval according to a historical simulation result of the integrated circuit device; the historical simulation result is a result of simulating performance test data using a historical semiconductor device model, and the performance test data is data required when simulating the integrated circuit device;

[0025] An establishing unit, used for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters;

[0026] A merging unit, used for merging the sub-device models to obtain a current semiconductor device model;

[0027] A second determining unit is used for receiving a target temperature required for simulation when it is necessary to simulate the integrated circuit device again, and determining a target temperature interval to which the target temperature belongs and a sub-device model corresponding to the target temperature interval in the current semiconductor device model;

[0028] A simulation unit is used to simulate the integrated circuit device using the corresponding sub-device model.

[0029] Optionally, the establishing unit is further used for:

[0030] A mapping table is generated according to each of the temperature intervals and the sub-component models corresponding to each of the temperature intervals; the mapping table stores the corresponding relationship between the temperature intervals and the sub-component models.

[0031] Optionally, the establishing unit is specifically used for:

[0032] Traversing the mapping table, comparing the target temperature with each temperature interval in the mapping table one by one, and determining the target temperature interval to which the target temperature belongs;

[0033] The sub-component model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-component model.

[0034] Optionally, the first determining unit is specifically configured to:

[0035] The at least one temperature interval is determined based on the degree of fit between the historical simulation results and the performance test data; the performance test data is the data required for simulating the integrated circuit device.

[0036] Optionally, the establishing unit is specifically used for:

[0037] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0038] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0039] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0040] The present application provides a method and apparatus for simulating an integrated circuit device, the method comprising: determining at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; for different temperature intervals, extracting corresponding device model parameters, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain a current semiconductor device model; when it is necessary to simulate the integrated circuit device again, receiving a target temperature required for the simulation, determining a target temperature interval to which the target temperature belongs and a sub-device model corresponding to the target temperature interval in the current semiconductor device model; simulating the integrated circuit device using the corresponding sub-device model; in this way, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range it is in, a suitable sub-device model can be found to simulate the integrated circuit device, thereby ensuring simulation accuracy and meeting simulation requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A schematic flow chart of a method for simulating an integrated circuit device provided in an embodiment of the present application;

[0042] Figure 2 A historical simulation result diagram of a MOSFET device simulated by a historical semiconductor device model provided in an embodiment of the present application;

[0043] Figure 3 A result diagram of simulating a MOSFET device using the current semiconductor device model provided in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the structure of an apparatus for simulating an integrated circuit device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] In order to solve the technical problem that the semiconductor device model in the prior art is only applicable within a certain temperature range, resulting in the simulation accuracy not being guaranteed when simulating the integrated circuit within a wider temperature range, the present application provides a method and apparatus for simulating an integrated circuit device.

[0046] The technical solution of the present application is further described in detail below through the accompanying drawings and specific embodiments.

[0047] Embodiment 1

[0048] This embodiment provides a method for simulating an integrated circuit device, such as Figure 1 As shown, the method includes:

[0049] S110, determining at least one temperature interval according to historical simulation results of the integrated circuit device;

[0050] When simulating an integrated circuit device using a device model, the performance test data of the integrated circuit device is mainly simulated to obtain simulation results, which can generally be presented as curves. The historical simulation results described here are simulation results obtained when simulating performance test data using historical semiconductor device models; performance test data is the data required for simulating the integrated circuit device.

[0051] As an optional embodiment, determining at least one temperature interval according to historical simulation results of the device includes:

[0052] According to the fit between the historical simulation results and the performance test data, it is determined that the performance test data in at least one temperature interval is the data required for simulating the integrated circuit device.

[0053] For details, please refer to Figure 2 , Figure 2 To use the existing semiconductor device model to simulate the historical simulation results of a MOSFET device, Figure 2 The curve in is the simulation result. Figure 2 The shape “■” in the figure is the performance test data.

[0054] from Figure 2 It can be seen that in the temperature range of -93℃ to 27℃, the historical simulation results and the performance test data have a good fit (high overlap); in the temperature range of -253℃ to -93℃, the historical simulation results and the performance test data have a poor fit (low overlap). Therefore, two temperature ranges can be determined based on the fit, namely -93℃~27℃ and -253℃~-93℃.

[0055] After the temperature interval is determined, each temperature interval corresponds to a historical sub-simulation result, and the historical sub-simulation results are combined to form a historical simulation result.

[0056] S111, extracting corresponding device model parameters for different temperature ranges, and establishing corresponding sub-device models according to the model parameters;

[0057] In order to make the model applicable to a wide temperature range and improve the simulation accuracy of the model, a corresponding sub-device model is established for different temperature ranges; in this way, no matter what the required simulation temperature is, a suitable model can be found for simulation.

[0058] Specifically, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters. The device model parameters mainly include threshold voltage and temperature coefficient, etc.

[0059] As an optional embodiment, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters, including:

[0060] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0061] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0062] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0063] Because for some temperature ranges, the accuracy of the historical sub-simulation results does not meet the simulation requirements, in order to ensure the simulation accuracy of the established sub-device model, it is necessary to re-fit the historical sub-simulation results corresponding to the temperature range with the performance test data based on the preset fit.

[0064] like Figure 2 As shown, since the historical sub-simulation result is a straight line with a linear relationship in a certain temperature range (the slope and parameters of the straight line can be determined), the target temperature coefficient and threshold voltage in the temperature range can be extracted based on the re-fitted simulation results.

[0065] It is worth noting that in some temperature ranges, the corresponding historical sub-simulation results can achieve the preset simulation accuracy. Therefore, for these temperature ranges, there is no need to re-fit the corresponding sub-simulation results to the performance test data based on the preset fit.

[0066] Continuing with the MOSFET device mentioned above as an example, the device model parameters are extracted within the temperature range of -93°C to 27°C, and the implementation of establishing the sub-device model is as follows:

[0067] .model nmos1 nmos

[0068] +level=49version=3.3 vth0=0.534669

[0069] …

[0070] +kt1=-0.181427

[0071] …

[0072] The device model parameters are extracted in the temperature range of -253℃ to -93℃, and the sub-device model is established as follows:

[0073] .model nmos2 nmos

[0074] +level=49version=3.3 vth0=0.554029

[0075] …

[0076] kt1=-0.111882

[0077] …

[0078] Among them, nmos1 is the name of the sub-device model corresponding to the temperature range of -93°C to 27°C, nmos2 is the name of the sub-device model corresponding to the temperature range of -253°C to -93°C, vt is the threshold voltage, and kt is the temperature coefficient.

[0079] As an optional embodiment, after the sub-device models corresponding to the respective temperature intervals are established, in order to quickly find a suitable sub-device model during simulation, after the corresponding sub-device models are established according to the model parameters, the following is further included:

[0080] A mapping table is generated according to each temperature interval and the sub-device model corresponding to each temperature interval; the mapping table stores the corresponding relationship between the temperature intervals and the sub-device models.

[0081] For example, the temperature range may include: a temperature range of -93°C to 27°C and a temperature range of -253°C to -93°C. Then, a mapping table may be generated for the sub-device models and temperature ranges corresponding to the two temperature ranges.

[0082] S112, merging the sub-device models to obtain a current semiconductor device model;

[0083] After the sub-device models corresponding to each temperature range are established, the sub-device models are merged to obtain an overall semiconductor device model.

[0084] Continuing with the above MOSFET device as an example, the merged semiconductor device model is:

[0085] .lib TT

[0086] .subckt nmos dgsbw=20u l=20u

[0087] .if((Temper1<=27)&&(Temper1>-93))

[0088] M1 dgsb nmos1 w=wl=l

[0089] .elseif((Temper1>-253)&&(Temper1<=-93))

[0090] M1 dgsb nmos2 w=wl=l

[0091] .endif

[0092] .ends

[0093] .model nmos1 nmos

[0094] +level=49version=3.3 vth0=0.534669

[0095] …

[0096] +kt1=-0.181427

[0097] …

[0098] .model nmos2 nmos

[0099] +level=49version=3.3vth0=0.554029

[0100] …

[0101] kt1=-0.111882

[0102] …

[0103] .endl TT

[0104] Among them, the present application combines various sub-device models together in the form of sub-circuits to form a semiconductor device model; wherein subckt is a sub-circuit and Temper1 is a target temperature.

[0105] Here, because the temperature parameter Temper in the simulation software cannot be directly used in the if statement, Temper needs to be converted to Temper1 in this application. Assuming the target temperature is 27, the conversion method is as follows:

[0106] .param temper1=27

[0107] .temper temper

[0108] S113, when it is necessary to simulate the integrated circuit device again, receiving the target temperature required for the simulation, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor model;

[0109] When the integrated circuit device needs to be simulated again, the user can input the target temperature required for the simulation into the simulation software.

[0110] After receiving the target temperature, the device model in the simulation software determines the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval.

[0111] As an optional embodiment, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model includes:

[0112] Traverse the mapping table, compare the target temperature with each temperature interval in the mapping table one by one, and determine the target temperature interval to which the target temperature belongs;

[0113] The sub-device model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-device model in the current semiconductor device model.

[0114] It should be noted that when simulation needs to be performed at different temperatures, the user can simply input multiple target temperatures.

[0115] S114, simulating the integrated circuit device using the corresponding sub-device model.

[0116] After the sub-device model is determined, the corresponding sub-device model can be used to simulate the integrated circuit device. Here, taking the above-mentioned MOSFET device as an example, the simulation result can be as follows: Figure 3 shown.

[0117] Depend on Figure 3 It can be seen that the performance test data has a high degree of fit with the simulation results, which indicates that the simulation accuracy of the semiconductor device model of the present application can be applied to a wide temperature range and the simulation accuracy can be guaranteed.

[0118] Based on the same inventive concept, the present application also provides a modeling device for a semiconductor device model, see Example 2 for details.

[0119] Embodiment 2

[0120] This embodiment provides a modeling device for a semiconductor device model, such as Figure 4As shown, the device includes: a first determining unit 41, an establishing unit 42, a merging unit 43, a second determining unit 44 and a simulation unit 45;

[0121] A first determining unit 41, configured to determine at least one temperature interval according to historical simulation results of the integrated circuit device;

[0122] An establishing unit 42, for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters;

[0123] A merging unit 43, used for merging sub-device models to obtain a semiconductor device model;

[0124] A second determining unit 44 is used to receive the current identification value of the temperature interval when the integrated circuit device needs to be simulated again, and determine the corresponding sub-device model in the semiconductor device model according to the current identification value;

[0125] The simulation unit 45 is used to simulate the integrated circuit device using the corresponding sub-device model.

[0126] Specifically, when simulating an integrated circuit device using a device model, the performance test data of the integrated circuit device is mainly simulated to obtain simulation results, which can generally be presented as a curve. The historical simulation results described here are simulation results obtained when simulating performance test data using historical semiconductor device models; performance test data is the data required for simulating an integrated circuit device.

[0127] As an optional embodiment, the first determining unit 41 is specifically configured to:

[0128] According to the fit between the historical simulation results and the performance test data, it is determined that the performance test data in at least one temperature interval is the data required for simulating the integrated circuit device.

[0129] For details, please refer to Figure 2 , Figure 2 To use the existing semiconductor device model to simulate the historical simulation results of a MOSFET device, Figure 2 The curve in is the simulation result. Figure 2 The shape “■” in the figure is the performance test data.

[0130] from Figure 2It can be seen that in the temperature range of -93℃ to 27℃, the historical simulation results and the performance test data have a good fit (high overlap); in the temperature range of -253℃ to -93℃, the historical simulation results and the performance test data have a poor fit (low overlap). Therefore, two temperature ranges can be determined based on the fit, namely -93℃~27℃ and -253℃~-93℃.

[0131] After the temperature interval is determined, each temperature interval corresponds to a historical sub-simulation result, and the historical sub-simulation results are combined to form a historical simulation result.

[0132] In order to make the model applicable to a wide temperature range and improve the simulation accuracy of the model, the establishment unit 42 establishes a corresponding sub-device model for different temperature ranges; thus, no matter what the required simulation temperature is, a suitable model can be found for simulation.

[0133] Specifically, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters. The device model parameters mainly include threshold voltage and temperature coefficient, etc.

[0134] Then as an optional embodiment, the establishing unit 42 is specifically used for:

[0135] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0136] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0137] Because for some temperature ranges, the accuracy of the historical sub-simulation results does not meet the simulation requirements, in order to ensure the simulation accuracy of the established sub-device model, it is necessary to re-fit the historical sub-simulation results corresponding to the temperature range with the performance test data based on the preset fit.

[0138] like Figure 2 As shown, since the historical sub-simulation result is a straight line with a linear relationship in a certain temperature range (the slope and parameters of the straight line can be determined), the target temperature coefficient and threshold voltage in the temperature range can be extracted based on the re-fitted simulation results.

[0139] It is worth noting that in some temperature ranges, the corresponding historical sub-simulation results can achieve the preset simulation accuracy. Therefore, for these temperature ranges, there is no need to re-fit the corresponding sub-simulation results to the performance test data based on the preset fit.

[0140] Continuing with the MOSFET device mentioned above as an example, the device model parameters are extracted within the temperature range of -93°C to 27°C, and the implementation of establishing the sub-device model is as follows:

[0141] .model nmos1 nmos

[0142] +level=49version=3.3 vth0=0.534669

[0143] …

[0144] +kt1=-0.181427

[0145] …

[0146] The device model parameters are extracted in the temperature range of -253℃ to -93℃, and the sub-device model is established as follows:

[0147] .model nmos2 nmos

[0148] +level=49version=3.3 vth0=0.554029

[0149] …

[0150] kt1=-0.111882

[0151] …

[0152] Among them, nmos1 is the name of the sub-device model corresponding to the temperature range of -93°C to 27°C, nmos2 is the name of the sub-device model corresponding to the temperature range of -253°C to -93°C, vt is the threshold voltage, and kt is the temperature coefficient.

[0153] As an optional embodiment, after the sub-device models corresponding to the various temperature intervals are established, in order to quickly find a suitable sub-device model during simulation, after the corresponding sub-device models are established according to the model parameters, the establishing unit 42 is further used to:

[0154] A mapping table is generated according to each temperature interval and the sub-device model corresponding to each temperature interval; the mapping table stores the corresponding relationship between the temperature intervals and the sub-device models.

[0155] For example, the temperature range may include: a temperature range of -93°C to 27°C and a temperature range of -253°C to -93°C. Then, a mapping table may be generated for the sub-device models and temperature ranges corresponding to the two temperature ranges.

[0156] After the sub-device models corresponding to the temperature intervals are established, the merging unit 43 is used to merge the sub-device models to obtain an overall current semiconductor device model.

[0157] Continuing with the above-mentioned MOSFET device as an example, the merged current semiconductor device model is:

[0158] .lib TT

[0159] .subckt nmos dgsbw=20u l=20u

[0160] .if((Temper1<=27)&&(Temper1>-93))

[0161] M1 dgsb nmos1 w=wl=l

[0162] .elseif((Temper1>-253)&&(Temper1<=-93))

[0163] M1 dgsb nmos2 w=wl=l

[0164] .endif

[0165] .ends

[0166] .model nmos1 nmos

[0167] +level=49version=3.3 vth0=0.534669

[0168] …

[0169] +kt1=-0.181427

[0170] …

[0171] .model nmos2 nmos

[0172] +level=49version=3.3 vth0=0.554029

[0173] …

[0174] kt1=-0.111882

[0175] …

[0176] .endl TT

[0177] Among them, the present application combines various sub-device models together in the form of sub-circuits to form a current semiconductor device model; wherein subckt is a sub-circuit and Temper1 is a target temperature.

[0178] Here, because the temperature parameter Temper in the simulation software cannot be directly used in the if statement, Temper needs to be converted to Temper1 in this application. Assuming the target temperature is 27, the conversion method is as follows:

[0179] .param temper1=27

[0180] .temper temper

[0181] When the integrated circuit device needs to be simulated again, the user can input the target temperature required for the simulation into the simulation software.

[0182] After receiving the target temperature, the device model in the simulation software determines the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval.

[0183] As an optional embodiment, the second determining unit 44 is specifically configured to:

[0184] Traverse the mapping table, compare the target temperature with each temperature interval in the mapping table one by one, and determine the target temperature interval to which the target temperature belongs;

[0185] The sub-device model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-device model in the current semiconductor device model.

[0186] It should be noted that when simulation needs to be performed at different temperatures, the user can simply input multiple target temperatures.

[0187] After the sub-device model is determined, the simulation unit 45 can use the corresponding sub-device model to simulate the integrated circuit device. Here, taking the above-mentioned MOSFET device as an example, the simulation result can be as follows: Figure 3 shown.

[0188] Depend on Figure 3 It can be seen that the performance test data has a high degree of fit with the simulation results, which indicates that the simulation accuracy of the semiconductor device model of the present application can be applied to a wide temperature range and the simulation accuracy can be guaranteed.

[0189] The semiconductor device modeling method and device provided in this application can bring at least the following beneficial effects:

[0190] The present application provides a method and apparatus for simulating an integrated circuit device, the method comprising: determining at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; for different temperature intervals, extracting corresponding device model parameters, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain the current semiconductor device model; when the integrated circuit device needs to be simulated again, receiving the target temperature required for the simulation, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model; simulating the integrated circuit device using the corresponding sub-device model; in this way, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range it is in, a suitable sub-device model can be found to simulate the integrated circuit device, ensuring simulation accuracy and meeting simulation requirements. And when the user needs to simulate the integrated circuit device, he only needs to input the target temperature to match the suitable sub-device model for simulation, and the simulation efficiency can also be guaranteed.

[0191] The above is only a preferred embodiment of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A method for simulating an integrated circuit device, characterized in that: The method comprises: Determine at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; For different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters; Merging the sub-device models to obtain a current semiconductor device model; When the integrated circuit device needs to be simulated again, receiving the target temperature required for the simulation, determining the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model; The integrated circuit device is simulated using the corresponding sub-device model; wherein, The extracting corresponding device model parameters for different temperature ranges and establishing corresponding sub-device models according to the model parameters include: For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree; Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained; A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

2. The method according to claim 1, characterized in that After the corresponding sub-device model is established according to the model parameters, the method further includes: A mapping table is generated according to each of the temperature intervals and the sub-component models corresponding to each of the temperature intervals; the mapping table stores the corresponding relationship between the temperature intervals and the sub-component models.

3. The method according to claim 2, characterized in that The determining of the target temperature interval to which the target temperature belongs and the sub-device model corresponding to the target temperature interval in the current semiconductor device model includes: Traversing the mapping table, comparing the target temperature with each temperature interval in the mapping table one by one, and determining the target temperature interval to which the target temperature belongs; The sub-device model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-device model in the current semiconductor device model.

4. The method according to claim 1, characterized in that The step of determining at least one temperature interval according to historical simulation results of the integrated circuit device comprises: The at least one temperature interval is determined according to the degree of fit between the historical simulation results and the performance test data.

5. A device for simulating an integrated circuit device, characterized in that: The device comprises: A first determining unit is used to determine at least one temperature interval according to a historical simulation result of the integrated circuit device; the historical simulation result is a result of simulating performance test data using a historical semiconductor device model, and the performance test data is data required when simulating the integrated circuit device; An establishing unit, used for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters; A merging unit, used for merging the sub-device models to obtain a current semiconductor device model; A second determining unit is used for receiving a target temperature required for simulation when it is necessary to simulate the integrated circuit device again, and determining a target temperature interval to which the target temperature belongs and a sub-device model corresponding to the target temperature interval in the current semiconductor device model; A simulation unit, used to simulate the integrated circuit device using the corresponding sub-device model; wherein, The establishing unit is specifically used for: For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree; Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained; A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

6. The device according to claim 5, characterized in that The establishing unit is further used for: A mapping table is generated according to each of the temperature intervals and the sub-component models corresponding to each of the temperature intervals; the mapping table stores the corresponding relationship between the temperature intervals and the sub-component models.

7. The device according to claim 6, characterized in that The establishing unit is specifically used for: Traversing the mapping table, comparing the target temperature with each temperature interval in the mapping table one by one, and determining the target temperature interval to which the target temperature belongs; The sub-component model corresponding to the target temperature interval is determined based on the corresponding relationship between the target temperature interval and the sub-component model.

8. The device according to claim 6, characterized in that The first determining unit is specifically configured to: The at least one temperature interval is determined based on the degree of fit between the historical simulation results and the performance test data; the performance test data is the data required for simulating the integrated circuit device.

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