Method and apparatus for magnetron sputtering

Abstract

A magnetron magnetic field (B) is generated in the magnetron sputtering reaction space (I) m ). Another magnetic field (B) is generated in the reaction space (I). a ), thus synthesizing the magnetic field (B r ) has a magnetron magnetic field (B) greater than that parallel to the target plane (9) in the reaction space (I). m )'s directional component is parallel to the target plane (9).

Description

Technical Field

[0001] The present invention relates to magnetron sputtering and, in some variations and embodiments thereof, to simultaneously controlling the direction of magnetic anisotropy in a ferromagnetic layer to be unidirectional. Background Art

[0002] Although the magnetic properties of materials are completely known to the skilled person, we can refer to the article "magnetic anisotropy", William D. Callister, Jr., Department of Metallurgical Engineering, University of Utah, "Material Science and Engineering, an introduction", 7th edition, John Wiley & Sons, especially chapter 20.8 "Magnetic Anisotropy".

[0003] Thus, when we say that the magnetic anisotropy of a sputtered deposited layer of ferromagnetic material is controlled to be unidirectional, we propose that throughout at least a major region of such layer, the ferromagnetic material, the “easy magnetization” and hence also the “hard crystallographic direction” perpendicular to the “easy magnetization” direction, becomes unidirectional and becomes defined relative to an orientation axis along the proposed region of the layer.

[0004] As further preferably known to those skilled in the art of magnetron sputtering, in magnetron sputtering, due to the so-called electron capture effect, a magnetron magnetic field circulating along the sputtering surface of the target establishes a ring of increased plasma density. This effect is caused by a magnetron magnetic field component parallel to the sputtering surface and an electric field component perpendicular to the sputtering surface. The erosion profile on the target becomes a ring according to the ring of the magnetron magnetic field. The resulting local erosion profile leads to poor utilization of the target and to an angular spatial distribution of the sputtered target material that changes over time, for example, due to an increase in the depth of the erosion profile. In order to improve the utilization of the target by a more uniform wear along the sputtering surface of the target, it is known to move the ring of the magnetron magnetic field along the sputtering surface. This makes it necessary for the magnetic dipole device to move relative to the target and below the target. Summary of the invention

[0005] It is an object of the present invention to provide an alternative magnetron sputtering method and apparatus.

[0006] This may be achieved by magnetron sputtering deposition or a method of making a substrate coated with a magnetron sputtering deposited layer, the method comprising:

[0007] providing a target having a sputtering surface and extending along a target plane in a vacuum housing;

[0008] providing a substrate having a surface to be sputter coated;

[0009] providing a reaction space between the sputtering surface and the surface to be sputter coated;

[0010] generating a magnetron magnetic field in the reaction space, wherein magnetic field lines of the magnetron magnetic field form an arc between a first outer pole surface and a first inner pole surface of the sputtering surface, and the first outer pole surface forms a closed loop around the first inner pole surface on the sputtering surface when viewed in a direction toward the sputtering surface;

[0011] generating a further magnetic field in the reaction space and between the at least one second outer pole surface and the at least one second inner pole surface;

[0012] By superposition of the magnetron magnetic field and the additional magnetic field, a composite magnetic field is generated in the reaction space, and at least in a main volume area of ​​the reaction space, a directional component of the composite magnetic field parallel to the target plane at a trajectory in the reaction space is greater than a directional component of the magnetron magnetic field parallel to the target plane at the trajectory.

[0013] definition:

[0014] 1) In this description and claims and as referred to in Figure 1 Explained under "extreme surface", we understand in the context of a sputtering device or a sputter-coated substrate or a method of producing a sputter-coated substrate, as follows:

[0015] The void volume V of the vacuum housing 4 is surrounded by the inner surface 2i of the wall 2 of the housing 4 and the surface 11 of one or more targets 1 to be sputtered. The wall 2 of the vacuum housing 4 may have openings, feedthroughs, etc. for pumping purposes and is therefore not necessarily vacuum-tight per se. i The surface region 8 of and 11 is called the “polar surface”, along which the main part of the magnetic field B transitions from the solid material to the gas environment of the volume V, or vice versa. The polar surface 8 has one of the magnetic polarities N or S.

[0016] 2) The magnetic field B is generated by the "magnetic dipole device" ( Figure 1 The magnetic dipole device is produced by a magnetic field (not shown). Such a magnetic dipole device comprises one or more permanent magnets or electromagnets connected in parallel or in series, usually permanent magnets in sputtering technology. The magnetic dipole device may also include a structure of one or more magnetic yokes. In fact, the magnetic dipole device completes a magnetic circuit including the pole surfaces 8 of magnetic polarity N, S and part of the void volume V.

[0017] 3) Throughout the specification and claims, under "predominantly", we understand it to mean more than 50%.

[0018] 4) Throughout the specification and claims, under "substrate orientation", we understand as follows: an x / y Cartesian coordinate system is established in the plane of the substrate, and a straight line on and through the substrate parallel to the x / y plane, the angular orientation of the substrate is the angle of the straight line with the x-axis or y-axis of the coordinate system. The straight line may or may not be physically marked on the substrate.

[0019] 5) Throughout the specification and claims, under "substrate plane", we understand the plane defined by the substrate holder and along which the substrate held on the substrate holder extends. Thus, the substrate is not necessarily planar. The substrate may be planar or arched or curved backwards or forwards along the substrate plane, etc.

[0020] 6) Throughout the description and claims, under "target plane" we understand the plane which is most often defined by the target holder and along which the target mounted on the target holder extends. Thus, the sputtering surface is not necessarily planar in its uneroded state, it may be planar or may be arched or even curved forwards or backwards etc. In case the target is realized by a drivably rotatable hollow cylinder, in which the magnetron magnet arrangement is for example fixed and directed towards the substrate, the target plane is understood to be a section parallel to the axis of rotation of the target cylinder and delimited between the section of the target cylinder temporarily exposed to the substrate and the rest of the target cylinder.

[0021] By means of the additional magnetic field, the erosion profile ring on the target is enlarged, resulting in improved target material utilization and an angular distribution of sputtered target material that varies less over time. This can be achieved without moving the magnetic dipole arrangement relative to the target.

[0022] Furthermore, the superposition results in an increased strength of the magnetic field in the reaction space relative to the magnetron magnetic field strength, leading to an increased plasma density and thus to an increased sputtering rate.

[0023] A variant of the method according to the invention comprises generating a synthetic magnetic field along a major surface area of ​​the sputtering surface.

[0024] A variant of the method according to the invention comprises generating a synthetic magnetic field along a main surface area of ​​the substrate surface to be sputter-coated.

[0025] With respect to the propagation axis of the loop of the magnetron magnetic field, the larger the area of ​​the sputtering surface that is exposed to a component of the magnetron magnetic field parallel to the sputtering surface and perpendicular to the propagation axis of the loop of the magnetron magnetic field, the greater the effect of the additional magnetic field in widening the erosion profile (also called the racetrack) in the target.

[0026] This is achieved by a variant of the method according to the invention, in which a tailoring of the magnetron magnetic field and the further magnetic field in the reaction space is carried out so that, viewed in the direction towards the sputtering surface, i.e. in a top view of the target, the field lines of the further magnetic field are parallel to the field lines of the magnetron magnetic field along at least a portion of the closed loop.

[0027] According to a variant of the method according to the invention, the at least one second outer pole surface is arranged outside the first outer pole surface, viewed in the direction of the sputtering surface, ie in a top view of the target.

[0028] A variant of the method according to the invention comprises selecting the magnetic polarity of the first outer pole surface and the magnetic polarity of the at least one second outer pole surface to be equal and selecting the magnetic polarity of the first inner pole surface and the magnetic polarity of the at least one second inner pole surface to be equal.

[0029] In a variant of the method according to the invention, at least one second inner pole surface is provided as part of the sputtering surface.

[0030] In a variant of the method according to the invention, at least one second inner pole surface is provided remote from and opposite the sputtering surface.

[0031] In a variant of the method according to the invention, at least one second inner pole surface is provided opposite the sputtering surface relative to the substrate, for example behind the substrate.

[0032] In one variant of the method according to the invention, the providing of the at least one second outer pole surface is carried out in at least one of the following positions, viewed parallel to the target plane, ie in side view:

[0033] opposite to the sputtering surface relative to the substrate;

[0034] aligning with a substrate;

[0035] between the target plane and the substrate and closer to the substrate than the target plane;

[0036] between the target plane and the substrate and farther from the substrate than from the target plane;

[0037] between the target plane and the substrate and equidistant from the substrate and the target plane;

[0038] Align with the target plane;

[0039] Opposite to the substrate relative to the target plane.

[0040] Note that if a substrate is not planar and thus distances to such substrate may not be clearly defined, such distances may instead be defined relative to a substrate plane along which such substrate is held by a respective substrate holder.

[0041] In one variant of the method according to the invention, the material of the target is chosen to be a ferromagnetic material and the direction of the magnetic anisotropy in the layer sputter-deposited on the substrate and along at least a major part of the surface of the substrate to be sputter-coated is controlled to be unidirectional or become unidirectional by a resultant magnetic field.

[0042] According to a variant of the method according to the invention, in which the target is selected as a ferromagnetic material as described, it consists in generating a synthetic magnetic field along a major surface area of ​​the substrate surface to be sputter-coated.

[0043] In a variant, such resultant magnetic field is uniform along said surface area.

[0044] According to a variant of the method according to the invention, in which the target is selected as the ferromagnetic material, the method comprises tailoring the magnetron magnetic field and the additional magnetic field in the reaction space so that, as viewed in the direction toward the sputtering surface, i.e. in a top view toward the target, along at least a portion of the closed loop, the field lines of the additional magnetic field are parallel to the field lines of the magnetron magnetic field.

[0045] In a variant of the method according to the invention, in which the target is selected as the ferromagnetic material, at least one second outer pole surface is arranged outside the first outer pole surface when viewed in the direction of the sputtering surface, ie in a top view towards the target.

[0046] In a variant of the method according to the invention, wherein the target is selected as the ferromagnetic material, the magnetic polarity of the first outer pole surface and the magnetic polarity of the at least one second outer pole surface are selected to be equal, and the magnetic polarity of the first inner pole surface and the magnetic polarity of the at least one second inner pole surface are selected to be equal.

[0047] In a variant of the method according to the invention, in which the target is selected as the ferromagnetic material, at least one second inner pole surface is arranged opposite the sputtering surface relative to the substrate, for example behind the substrate.

[0048] In a variant of the method according to the invention, wherein the target is selected as the ferromagnetic material, the at least one second outer pole surface is arranged in at least one of the following positions, viewed parallel to the target plane:

[0049] opposite to the sputtering surface relative to the substrate;

[0050] aligning with a substrate;

[0051] between the target plane and the substrate and closer to the substrate than the target plane;

[0052] between the target plane and the substrate and farther from the substrate than from the target plane;

[0053] between the target plane and the substrate and equidistant from the substrate and the target plane;

[0054] Align with the target plane;

[0055] Opposite to the substrate relative to the target plane.

[0056] In a variant of the method according to the invention, in which the target is selected as the ferromagnetic material, viewed parallel to the target plane, ie in side view, at least one second outer pole surface is arranged opposite the sputtering surface relative to the substrate.

[0057] A variant of the method according to the invention comprises providing a ring having a maximum ring diameter, wherein, viewed in the direction towards the sputtering surface, i.e. in a top view towards the target, at least one second outer pole surface comprises a means of at least one second pole surface of limited extent on one side of the maximum diameter and a further means of at least one second pole surface of limited extent on the other side of the maximum diameter.

[0058] A variant of the variant of the method according to the invention as just described comprises, viewed in the direction towards the sputtering surface, providing a first leg of the first outer pole surface, which extends along a first linear (i.e. straight) trajectory on one side of the maximum diameter, and providing a second leg of the first outer pole surface, which extends along a second linear (i.e. straight) trajectory on the other side of the maximum diameter, one device extending along the first leg, and another device extending along the second leg.

[0059] Note that a portion or surface "extending along a linear or straight trajectory" may itself be straight, or may, for example, meander around such a trajectory or be arcuate around such a trajectory.

[0060] In one variant of the variant of the method according to the invention just described, the first and second legs extend linearly, ie are straight legs.

[0061] In one variant of the variant of the method according to the invention just described, the first and second legs are selected to be parallel to each other.

[0062] In a variant of the method according to the invention, the one device and the further device extend along respective linear, ie straight, trajectories, seen in the direction towards the sputtering surface, ie in a top view towards the target.

[0063] In one variant of the variant of the method according to the invention just described, one and the further device are selected to extend linearly, ie to be straight.

[0064] In a variant of the method according to the invention, the one and the further device extend beside the respective leg at respective constant intervals.

[0065] A variant of the method according to the invention comprises selecting a portion of a vacuum exposed surface of the vacuum housing as the at least one second outer pole surface, or selecting a vacuum exposed surface of a portion mounted to the vacuum housing.

[0066] A variant of the method according to the invention comprises moving the substrate and the target relative to each other such that the substrate passes over the target.

[0067] A variant of the just described variant of the method according to the invention consists in providing more than one substrate and subsequently carrying out the method according to the invention or according to at least one of its variants on said more than one substrate.

[0068] A variant of the method according to the invention consists in carrying out the method according to the invention or according to at least one of its variants more than once on a substrate.

[0069] A variant of the method according to the invention comprises establishing a magnetron magnetic field and a further magnetic field such that, viewed towards the sputtering surface, i.e. in a top view towards the target, the field lines of the resultant magnetic field extend over a major part of the sputtering surface parallel to the orientation axis and moving the substrate relative to the target at a constant substrate orientation angle relative to the orientation axis.

[0070] In one variant of the method according to the invention, the substrate is rotated relative to the target about an axis of rotation remote from the substrate.

[0071] In a variant of the method according to the invention, the rotation axis intersects the normal to the target plane at an angle between 45° and 0°, both limits included. In the variant in which the rotation axis "intersects" the normal at an angle of 0°, the rotation axis is actually parallel to the normal, i.e. perpendicular to the target plane.

[0072] In a variant of the method according to the invention, the rotation axis intersects the normal to the target plane at an angle between 45° and 90°, both limits included. In the variant in which the rotation axis "intersects" the normal at an angle of 90°, the rotation axis is actually perpendicular to the normal, i.e. parallel to the target plane.

[0073] In one variant of the method according to the invention, the axis of rotation intersects the normal to the surface of the substrate to be sputter-coated at an angle between 0° and 45°, both limits included, and in one variant at an angle of 0°. In this case, the axis of rotation is parallel to the normal to the surface of the substrate to be sputter-coated, or to the normal to the respective substrate plane defined by the respective substrate holder.

[0074] In one variant of the method according to the invention, the axis of rotation intersects the normal to the surface of the substrate to be sputter-coated at an angle between 45° and 90°, both limits included, and in one variant at an angle of 90°. In this case, the axis of rotation is perpendicular to the normal to the surface of the substrate to be sputter-coated, or to the normal to the respective substrate plane defined by the respective substrate holder.

[0075] A variant of the method according to the invention comprises generating a further magnetic field of greater strength than the magnetron magnetic field close to the surface to be sputter coated and generating a further magnetic field of weaker strength than the magnetron magnetic field away from the surface to be sputter coated.

[0076] It is fully clear to a person skilled in the art of magnetron sputtering that the first outer pole surface and typically the at least one first inner pole surface are respective parts of the sputtering surface.

[0077] In a variant of the method according to the invention, the first and second outer pole surfaces and the first and second inner pole surfaces are fixed at least relative to each other. If they are not absolutely fixed, they move together as one entity.

[0078] In a variant of the method according to the invention, the target plane and the substrate plane are parallel planes.

[0079] The described method invention or each individual variant of the described method invention can be combined with one or more of the described variants or other described variants, unless incompatible.

[0080] The object of the present invention is also achieved by a sputtering device, which comprises:

[0081] A vacuum housing, and wherein:

[0082] a substrate holder defining a substrate plane and configured to hold a two-dimensionally extended substrate having a surface to be sputter coated;

[0083] a target mounted to the target holder and extending along a target plane and having a sputtering surface and a back surface;

[0084] a magnetron magnetic dipole device, viewed in a direction toward the sputtering surface, i.e., in a top view toward the target, comprising a first outer pole surface and a first inner pole surface, the first outer pole surface forming a closed loop around the first inner pole surface and along the sputtering surface, the first outer pole surface having one magnetic polarity and the first inner pole surface having another magnetic polarity;

[0085] Another magnetic dipole device has at least one second outer pole surface and at least one second inner pole surface, and wherein, viewed in the direction toward the sputtering surface, i.e. in a top view toward the target, at least one second inner pole surface is within the ring of the first outer pole surface, and at least one second outer pole surface is away from the second inner pole surface, the second outer pole surface has one magnetic polarity as described, and the second inner pole surface has the other magnetic polarity as described.

[0086] In one embodiment of the device according to the invention, viewed in the direction towards the sputtering surface, ie in a top view towards the target, the at least one second outer pole surface is located outside the first outer pole surface.

[0087] In one embodiment of the device according to the invention, the second outer pole surface is located outside the periphery of the substrate on the substrate holder, viewed in the direction towards the sputtering surface.

[0088] In one embodiment of the device according to the invention, the second outer pole surface is located outside the periphery of the target, viewed in the direction towards the sputtering surface.

[0089] In one embodiment of the device according to the invention, the magnetron magnetic dipole device and the further magnetic dipole device are tailored so that the field lines of the magnetron magnetic field generated by the magnetron magnetic dipole device and the field lines of the further magnetic field generated by the further magnetic dipole device are parallel to each other along at least a portion of the closed loop and as observed in the direction towards the sputtering surface.

[0090] In one embodiment of the apparatus according to the embodiment of the invention just described, the target is a ferromagnetic material.

[0091] In an embodiment of the device according to the invention, the first outer pole surface is part of a sputtering surface.

[0092] In an embodiment of the device according to the invention, the at least one second inner pole surface is part of a sputtering surface.

[0093] In one embodiment of the device according to the invention, the at least one second inner pole surface is remote from the sputtering surface.

[0094] In an embodiment of the device according to the invention, the at least one second inner pole surface is located opposite the sputtering surface relative to the substrate plane, for example behind the substrate.

[0095] In one embodiment of the device according to the invention, viewed parallel to the target plane, i.e. in side view, the at least one second outer pole surface is in at least one of the following positions:

[0096] relative to the base plane and the target plane;

[0097] Aligned with the base plane;

[0098] between the target plane and the substrate plane and closer to the substrate plane than to the target plane;

[0099] between the target plane and the substrate plane and farther from the substrate plane than from the target plane;

[0100] between the target plane and the basal plane and equidistant from the basal plane and the target plane;

[0101] Align with the target plane;

[0102] Relative to the target plane and opposite to the substrate plane.

[0103] In one embodiment of the device according to the invention, the first inner pole surface is a further closed ring, viewed in the direction towards the sputtering surface.

[0104] In one embodiment of the device according to the just described embodiment of the invention, the second inner pole surface is within the further closed loop, viewed in the direction towards the sputtering surface.

[0105] In one embodiment of the device according to the invention, at least a portion of the first and second inner pole surfaces overlap, viewed in the direction towards the sputtering surface.

[0106] In one embodiment of the device according to the invention, the ring of the first outer pole surface has a maximum ring diameter, and, viewed in the direction towards the sputtering surface, at least one second outer pole surface comprises a limited range of means of at least one second pole surface on one side of the maximum diameter and a further limited range of at least one second pole surface on the other side of the maximum diameter.

[0107] An embodiment of the device according to the embodiment just described of the present invention, viewed in the direction toward the sputtering surface, includes a first leg of a first outer pole surface and a second leg of the first outer pole surface, the first leg extending along a first linear trajectory on one side of the maximum diameter, and the second leg extending along a second linear trajectory on the other side of the maximum diameter, whereby, still viewed in the direction toward the sputtering surface, one device extends along the first leg and the other device extends along the second leg.

[0108] In one embodiment of the device according to the just described embodiment of the invention, the first and second legs are linear, ie straight, viewed in a direction towards the sputtering surface.

[0109] In an embodiment of the device according to the just described embodiment of the invention, the first and second legs are parallel to each other, viewed in a direction towards the sputtering surface.

[0110] In one embodiment of the device according to the invention, the device as described above and the further device as described above extend along corresponding linear tracks, viewed in the direction towards the sputtering surface.

[0111] In an embodiment of the device according to the described embodiment of the invention, the one and the further device extend linearly, ie are straight, viewed in the direction towards the sputtering surface.

[0112] In one embodiment of the device according to the invention, the one and the further device extend beside the respective leg at a respective constant spacing, viewed in the direction of the sputtering surface.

[0113] In an embodiment of the device according to the invention a part of the vacuum exposed surface of the vacuum housing or a vacuum exposed surface of a part mounted to the vacuum housing is at least one second outer pole surface.

[0114] An embodiment of the device according to the invention comprises at least one further vacuum handling device, the substrate holder and the target holder on the one hand and the at least one further vacuum handling device on the other hand being drivably movable relative to each other, moving the substrate holder over the sputtering surface and moving the substrate holder to and from the at least one further vacuum handling device.

[0115] An embodiment of the device according to the embodiment just described comprises more than one of said substrate holders, said substrate holders being movable, in one embodiment typically relative to the sputtering surface and to at least one further vacuum processing device.

[0116] In an embodiment of the device according to the invention, at least one of the further vacuum processing devices is a sputtering chamber as described and according to the invention or according to at least one embodiment thereof.

[0117] In one embodiment of the device according to the invention, as provided and viewed in the direction of its sputtering surface, at least one sputtering device, the magnetron magnetic dipole device and the further magnetic dipole device are configured such that the field lines of the resultant magnetic field resulting from the superposition of the magnetron magnetic field generated by the magnetron magnetic dipole device and the further magnetic dipole device are parallel and, once aligned with the sputtering surface, extend in the direction of the orientation axis over a major part of the sputtering surface or the substrate holder, and the relative movement of the at least one substrate holder is controlled in such a way that the at least one substrate holder passes the sputtering surface with a constant angular orientation relative to the orientation axis.

[0118] In one embodiment of the device according to the invention, the substrate holder is drivably relatively rotatable about an axis of rotation remote from the sputtering surface.

[0119] In one embodiment of the device according to the invention, the rotation axis intersects the normal to the base plane at an angle between 0° and 45°, both limits included. In one embodiment, the intersection angle is 0°, so that the rotation axis is parallel to said normal.

[0120] In one embodiment of the device according to the invention, the rotation axis intersects the normal to the base plane at an angle between 45° and 90°, both limits included. In one embodiment, the angle is 90°, so that the rotation axis is perpendicular to said normal.

[0121] In one embodiment of the device according to the invention, the rotation axis intersects the normal on the target plane at an angle between 45° and 0°, both limits included. In the variant where the rotation axis "intersects" said normal at an angle of 0°, the rotation axis is actually parallel to said normal, i.e. perpendicular to the target plane.

[0122] In one variant of the device according to the invention, the axis of rotation intersects the normal on the target plane at an angle between 45° and 90°, both limits included. In the variant in which the axis of rotation "intersects" said normal at an angle of 90°, the axis of rotation is actually perpendicular to said normal, i.e. parallel to the target plane.

[0123] In one embodiment of the device according to the invention, the target is of a ferromagnetic material.

[0124] In an embodiment of the device according to the invention the magnetron dipole device and the further magnetic dipole device are fixed at least relative to each other. If they are movable, they are movable together as a unit.

[0125] In one embodiment of the device according to the invention, the target plane and the substrate plane are parallel planes.

[0126] Each individual embodiment of the described device invention or described device may be combined with one or more of the described embodiments or other embodiments, unless this is contradictory. BRIEF DESCRIPTION OF THE DRAWINGS

[0127] The present invention will be further illustrated with the aid of the accompanying drawings. The accompanying drawings show:

[0128] Figure 1 : A most simplified vacuum housing having a target and a polar surface, in order to define the term "polar surface";

[0129] Figure 2 : The general method of the method and device according to the invention is schematically and heuristically shown in a side view;

[0130] Figure 3 : In a similar Figure 2 In the representation, a schematic and simplified diagram of the method for generating Figure 2 Different embodiments of the apparatus or different variations of the method of the additional magnetic field;

[0131] Figure 4 : In a similar Figure 3 a representation of a target not shown, according to an embodiment or variant of the invention with respect to generating a further magnetic field adjacent to a substrate;

[0132] Figure 5 : In a schematic and simplified top view, the mutual positioning of the pole surfaces in an embodiment of the device according to the invention or in a variant of the method according to the invention is shown;

[0133] Figure 6 : In with Figure 5 In a similar schematic and simplified top view, the mutual positioning of the pole surfaces in a variant of an embodiment of the device or of the method according to the invention;

[0134] Figure 7 : In with Figure 5 or Figure 6 In a similar schematic and simplified top view, with particular focus on influencing the layer deposition by means of a resultant magnetic field, the mutual positioning of the polar surfaces in a variant of an embodiment of the device or of the method according to the invention;

[0135] Figure 8 : Qualitatively, the distribution of magnetic field strength depends on the spacing from the sputtering surface to the substrate to utilize the resultant magnetic field as an alignment magnetic field.

[0136] Fig. 9: In top view, schematically and heuristically, the magnetic anisotropy of the ferromagnetic layer is aligned as achieved by embodiments and variants of the invention;

[0137] Fig.10 : In top view, schematically and simplified, the mutual position and shape of the polar surfaces of embodiments and variants of the invention;

[0138] Fig.11 : In with Fig.10 In a similar representation, the mutual positions and shapes of the polar surfaces of embodiments and variants of the invention are shown schematically and simplified;

[0139] Fig.12 : In a side view, embodiments and variants of the invention are simplified and schematically shown;

[0140] Fig.13 : Simplified and schematically shown in top view Fig.12 the mutual position and shape of the polar surfaces of the embodiments and variants;

[0141] Fig.14 : an embodiment or variant of the invention, wherein a plurality of substrates are moved through at least one sputtering device according to the invention;

[0142] Fig.15 : an embodiment or variant of the invention, wherein a plurality of substrates are moved through at least one sputtering device according to the invention;

[0143] Fig.16 : Schematically and simplified, in top view, a vacuum processing device comprises at least one sputtering device according to the invention and carries out the method according to the invention;

[0144] Fig.17 : Schematically and simplified, in a side view, a vacuum processing device comprises at least one sputtering device according to the invention and carries out the method according to the invention;

[0145] Fig.18 : Schematically illustrating the spatial orientation of the substrate to be maintained relative to the resultant magnetic field in order to uniformly align the magnetic anisotropy;

[0146] Fig.19 : In the top view, the functional blocks are schematically and simplified shown according to Fig.17 The orientation control of the substrate is performed at the device. DETAILED DESCRIPTION

[0147] Figure 2 Schematically and heuristically, i.e. in a non-scientific manner, the overall concept of the method and device according to the invention is shown. Figure 2In a target holder 3 (not shown), a target 1 mounted on a target holder 3 is provided. The target 1 is electrically operated as a cathode as schematically shown by a power supply 5 and an anode 7. The target holder 3 defines a target plane 9 as a trajectory along which the target 1 mounted to the target holder 3 extends. The surface of the sputtered target 1 is a sputtering surface 11.

[0148] The substrate 13 has a surface 15 to be sputter coated, comprising material sputtered from the target 1. The substrate 13 is mounted to a substrate holder 17 which defines a substrate plane 19 as a trajectory along which the substrate 13 held by the substrate holder 17 extends.

[0149] As is well known to those skilled in the art of magnetron sputtering, a magnetron magnetic field B is generated along the sputtering surface 11 and in the reaction space I. m . Magnetron magnetic field B m , as shown by its magnetic field lines, emanates from the first outer pole surface 20, as shown by the thickened lines. As seen in the direction S1 towards the sputtering surface 11, ie in a top view towards the target 1, the first outer pole surface circulates along the sputtering surface 11.

[0150] Magnetron magnetic field B m impact on one or more first inner pole surfaces 22, such as Figure 2 The first inner pole surface 22 may be a single pole surface as shown by the dashed line.

[0151] exist Figure 2 For the sake of clarity, only the magnetron magnetic field B m The right hand side of the ring schematically shows a fixed magnetic dipole arrangement 24 .

[0152] As viewed in direction S1, ie towards the sputtering surface 11 or the target plane 9, the first outer pole surface 20 forms a closed loop around one or more first inner pole surfaces 22. Figure 2 In the embodiment, the first outer pole surface 20 has an N magnetic polarity, and the at least one first inner pole surface 22 has an S magnetic polarity. These polarities may be reversed.

[0153] Magnetron magnetic field B m The direction of can be considered as the component B parallel to the target plane 9 mx , and the component B perpendicular to it mz .

[0154] Those skilled in the art are fully aware that mx The B component controls the electron trapping effect of the magnetron, thereby controlling the corresponding plasma density adjacent to the sputtering surface 11, thereby controlling the correspondingly formed racetrack, i.e., the erosion profile in the sputtering surface 11. These B mxThe more pronounced the component is along the sputtering surface 11, the larger the racetrack will be and the better the utilization of the target material will be.

[0155] In order to improve the magnetron magnetic field B m The effect of this, and according to the present invention, generates an additional magnetic field B a .like Figure 2 As schematically shown in FIG. 1 , the additional magnetic field B is generated in the reaction space I. a , so that the trajectory considered in the reaction space I and by B m and B a The combined magnetic field B generated by the superposition at the trajectory r has a component B greater than that at the trajectory mx The larger component B parallel to the target plane 9 rx . As from Figure 2 The other magnetic field B is clearly visible. a The magnetron magnetic field B must be in the x direction m In each trajectory of the reaction space I, where B a With a non-zero direction component B ax , this improvement is achieved and therefore along the main area of ​​the sputtering surface 11.

[0156] In order not to Figure 2 Too much content, Figure 3 and 4 With Figure 2 A similar representation shows the generation of an additional magnetic field B a different possibilities.

[0157] The magnetic polarity of all pole surfaces described is based on Figure 2 The magnetron magnetic field B m The polarity of the polar surfaces 20 and 22. All of these magnetic polarities can be reversed together.

[0158] according to Figure 3 , another magnetic field B is generated between the second inner pole surface 30 and the second outer pole surface 32 a .

[0159] The second inner pole surface 30 is opposite the sputtering surface 11 relative to the substrate plane 19, for example behind the substrate 13. The second inner pole surface 30 is also aligned with the central area of ​​the substrate holder 17, as will be discussed later, and in any case is viewed from the top view S1 toward the target 1 at the first outer pole surface 20 (see Figure 2 ) is located inside the ring. Similar to the first inner polar surface 22, the second inner polar surface 30 may also be subdivided into more than one corresponding polar surface region.

[0160] The second outer pole surface 32 is located outside the ring of the first outer pole surface 20 (see Figure 2 ), and again observe in direction S1. Figure 3 , and viewed in the y direction parallel to the target plane 9, and thus in the direction of propagation of the magnetron magnetic field ring, as shown in S2, one or more second outer pole surfaces 32 may be located at:

[0161] (a) relative to the substrate plane 19 and the sputtering surface 11 or the target plane 9;

[0162] (b) aligned with the base plane 19;

[0163] (c) between the base plane 19 and the target plane 9, and closer to the base plane 19 than to the target plane 9;

[0164] (d) centered relative to the base plane 19 and the target plane 9, and thus equidistant from the base plane 19 and the target plane 9;

[0165] (e) between the base plane 19 and the target plane 9, and closer to the target plane 9 than the base plane 19;

[0166] (f) aligning with the target plane 9;

[0167] (g) Opposite to the sputtering plane 9 and the substrate plane 19.

[0168] As described above, the one or more second outer pole surfaces 32 are still outside the ring of the first outer pole surface 20 , as shown in the direction S1 .

[0169] Still viewed in the direction S1, the second outer pole surface 32 can form a ring along the first annular outer pole surface 20 (see Figure 2 ): In this case, a single second outer pole surface 32 is provided.

[0170] As an alternative, or possibly in addition, two or more than two different second outer pole surfaces 32 may be provided along the ring of the first outer pole surface 20 .

[0171] Please note that Figure 3 For another magnetic field B a , the second outer pole surface 32 at different possible positions (a) to (g) is not shown. Please also note that in general, the position of a single second outer pole surface 32 or more than one second outer pole surface 32 as shown in (a) to (g) can be varied along the ring of the first outer pole surface 20, that is, the second outer pole surface or a single second outer pole surface can be set at different positions (a) to (g).

[0172] exist Figure 3 In FIG. 34, another magnetic field B is shown.a Magnetic dipole device.

[0173] exist Figure 3 3 , the pole surfaces 32 and 30 are again schematically indicated by bold lines, which is also valid for the representation of the pole surfaces in the following figures.

[0174] Figure 3 The dashed line in B a ' shows the custom additional magnetic field B a Here, the second inner pole surface 30' is arranged as a part of the sputtering surface 11. Please note that by B a and B a Combinations of generating other magnetic fields are also possible. In any case, the various possibilities (a) to (g) of the second one or more second outer pole surfaces 32 are valid, and the combination of generating B a and / or B a 'It's irrelevant.

[0175] Obviously, in addition to the magnetron magnetic field B m In addition, another magnetic field B is used a , B a ', the latter itself is known. This requires Figure 3 In a variant and embodiment of the present invention, this additional magnetic dipole device is located outside the wall 2 of the vacuum housing 4 (see Figure 1 ).

[0176] Figure 4 With Figure 2 or 3 similar representations as examples illustrate such variations and embodiments, whereby in variation B a Another magnetic field is generated in which one or more second outer pole surfaces 32 are in accordance with Figure 3 The magnetic dipole device 34 is arranged outside the wall 2 of the vacuum housing 4. The target holder, target and magnetron magnetic field having corresponding pole surfaces are not in Figure 4 Shown in.

[0177] The wall 2 of the vacuum housing 4 isolates the sputtering process vacuum from a different gas atmosphere U, in particular the ambient atmosphere. One or more second outer pole surfaces 32 are located on the inner process vacuum exposed surface 2 of the wall 2. i The second inner pole surface 30 is also located on the surface 2 i The further magnetic dipole device 34 is located outside the vacuum sputtering atmosphere, such as prevails in the reaction space I, for example in the ambient atmosphere.

[0178] For according to Figure 3 and its description produces another magnetic field B a, B a Any variation of ' can be realized as another magnetic field B separated from the vacuum sputtering atmosphere in the reaction space I a and / or B a 'Provide a general concept of the magnetic dipole device 34.

[0179] according to Figure 4 , that is, having at least one second outer pole surface 32 and at least one second inner pole surface 30, which is along the inner surface 2 of the portion of the wall 2 of the vacuum housing 4 adjacent to the base plane 19 i , if one or more than one substrate 13 with a corresponding substrate holder 17 will be as Figure 4 This example is particularly suitable if the double-headed or unidirectional arrow M in FIG. 1 schematically shows the movement of the target 1 through the target 1.

[0180] So far, we have not conclusively considered the magnetic field B used for the magnetron m and for the additional magnetic field B as observed in direction S1 a , B a 'The mutual positioning of the polar surfaces. In practice, this positioning can be selected substantially independently of the mutual position of the polar surfaces, such as according to Figure 3 As seen in direction S2. With regard to the mutual positioning as seen in direction S1, we have only described one or more second inner pole surfaces 30 ( Figure 3 ) should be set on the annular first outer surface 20 ( Figure 2 ) and at least one second outer pole surface 32 ( Figure 3 ) should be outside the annular first outer pole surface 20.

[0181] Figure 5 An embodiment of the mutual positioning of the pole surfaces viewed in direction S1 is schematically illustrated. As an example, the annular first outer pole surface 20 forms a ring with magnetic polarity N. An inner pole surface 22 with magnetic polarity S is provided within the ring of the first outer pole surface 20 (see Figure 2 ).exist Figure 5 In the example of the embodiment, a first inner pole surface 22 forms a circular ring concentric with the ring of the first outer pole surface 20. In this example, the second outer pole surface 32 is also concentric with and outside the ring of the first outer pole surface 20, and therefore, in this example, at a constant spacing from the ring of the first outer pole surface 20.

[0182] At least one second inner pole surface 30 or 30' (see Figure 3 ) (here there is only one second inner polar surface), located within the ring of the first outer polar surface 20, but here at a randomly selected position.

[0183] Magnetron magnetic field B m and another magnetic field B aor B a The direction of the magnetron magnetic field B is shown in a heuristic manner by their magnetic field lines, observed in the direction S1. As can be seen, the magnetron magnetic field B observed in the direction of S1 m direction and the other magnetic field B a , B a ' direction crosses at a corresponding variable angle α at most positions in the reaction space I. Although this variation or embodiment falls under the overall scheme according to the present invention, it can be seen that the synthetic magnetic field B r It has a direction inclined relative to the propagation direction PR of the magnetron racetrack.

[0184] Therefore, on the one hand, the magnetron effect is improved by increasing the magnetic field component parallel to the target plane, and on the other hand, the magnetron effect is disturbed by accelerating the electrons away from the magnetron propagation direction PR and leaving the magnetron electron trap.

[0185] In accordance with Figure 6 In other variations and embodiments of the present invention, the magnetron magnetic field B m and another magnetic field B a , B a ' are parallel to each other as seen in direction S1. Figure 6 Variations or embodiments of Figure 5 The only difference is that at least one second inner pole surface 30, 30' is within the ring of the first inner pole surface 22. In an alternative embodiment or variant, the first inner pole surface 22 and the second inner pole surface 30, 30' overlap each other.

[0186] Considering Figure 5 , we propose to implement α as being within the following limit:

[0187] 0≤α≤2 。

[0188] For example, from Figure 2 , 3 As can be seen in Figure 4, the magnetron magnetic field B m and another magnetic field B a , B a The magnetic field B generated by the superposition of r It is also present along the surface 15 to be sputter coated of the substrate 13. Therefore, in addition to improving magnetron sputtering from the target 1, the method and apparatus according to the invention can also be tailored to specifically influence the layer deposition on the surface 15 of the substrate 13 to be sputter coated.

[0189] For example, from Figure 3 It is clear that the other magnetic field B a , B a 'For the synthetic magnetic field B rThe effect of can be tailored to be more pronounced adjacent to the substrate plane 19 than adjacent to the target plane 9 .

[0190] In a variant and embodiment, the magnetron magnetic field B m and another magnetic field B a , B a The synthetic magnetic field B generated by the superposition of r It is used to establish, ie control the direction of magnetic anisotropy in a sputter-deposited ferromagnetic layer to be unidirectional, at least over a major part of the layer extent. In this variant and embodiment, the target 1 mounted or to be mounted on a target holder 1 is a ferromagnetic material.

[0191] The overall concept of this variant of the embodiment of the method and device according to the invention is as follows: Figure 7 The figure shows the relative positions of the polar surfaces viewed along the direction S1. Figure 7 The shapes of the polar surfaces shown are hardly those adopted in practice, but it should be shown that one has a great deal of freedom to tailor the corresponding shapes, depending on the specific application.

[0192] For the corresponding polar surface, Figure 7 The same reference numerals are used in the entire description so far.

[0193] Typically, the annular first outer pole surface 20 may have an annular shape as desired, for example for a specific shape of the target 1 , substrate 13 , etc. Thus, one or more first inner pole surfaces 22 , as a ring or as a whole or more than one whole pole surface, are adapted to the specific shape of the ring of the first outer pole surface 20 .

[0194] The ring of the first outer pole surface 20 has a maximum diameter D max .

[0195] At the maximum diameter D max On both sides and outside the ring of the first outer pole surface 20, the second outer pole surface 32 is formed by two or more than two outer pole surfaces along the maximum diameter D max The shapes and corresponding positions of the different second outer pole surfaces 32a and 32b are again selected to obtain the magnetron magnetic field B m and another magnetic field B a , B a The desired synthetic magnetic field Br is obtained in the superposition of ', which can now be called the "alignment magnetic field".

[0196] refer to Figure 3 , in order to use the synthetic magnetic field B rto align the direction of magnetic anisotropy along the layer of ferromagnetic material deposited by sputtering on the substrate 13, the substrate 13, in particular its surface 15 to be sputter-coated, is located relative to the magnetron magnetic field B m In the field region far away, and in another magnetic field B a , B a 'In a fairly close field area. This Figure 8 The d coordinate represents the value d in the vertical direction from the sputtering surface 11 of the target 1 to the position of the surface 15 to be sputter-coated. o The magnetron magnetic field B parallel to the substrate plane 19 and the target plane 9 m The intensity of the field component is directed toward d o decreases, and the other magnetic field B a , B a The corresponding component intensity of ' is towards d o This can be achieved by considering Figure 3 This is achieved by appropriately choosing the position of the second outer pole surface 32 , in particular according to one of the variants (a), (b), (c).

[0197] Thus, another magnetic field B is still achieved a , B a 'Improves magnetron sputtering, but additionally provides a unidirectional alignment parallel to the orientation axis of the magnetic anisotropy of the layer of ferromagnetic material sputtered deposited on the surface 15 of the substrate 13.

[0198] Please note that also consider Figure 3 According to (a) the embodiment or variant of positioning the second outer pole surface 32 realizes the following Figure 8 The desired field strength distribution, on the other hand, allows providing a dipole device 34 (see Figure 4 ).

[0199] from Figure 5 and 6 It can be clearly seen from the discussion that, when viewed in the direction S1, the additional magnetic field B a , B a 'Should be as parallel to the magnetron magnetic field B as possible m If another magnetic field B is used a , B a 'It is also common to use an alignment magnetic field, ie to align the direction of the magnetic anisotropy in and along the sputter-deposited ferromagnetic material layer relative to a predetermined reference direction, ie the orientation axis on the substrate, ie over the surface extent of the deposited layer.

[0200] exist Fig. 9 The resultant magnetic field B is shown heuristically. rEffect of magnetic anisotropy in a sputter-deposited ferromagnetic layer. In the ferromagnetic material of layer 14, no alignment field B is applied when it is deposited or when it is deposited. r , the magnetic anisotropy is unevenly distributed, as schematically shown by the easy magnetization axis e1 and the hard magnetization axis h1.

[0201] According to the invention, a synthetic magnetic field B is applied along the axis r and uniformly over the main area of ​​the sputter-deposited layer material. r The magnetic anisotropy in the material of layer 14 is unidirectional, that is, the easy magnetization axis and the hard magnetization axis are respectively along the corresponding single direction e 2d alignment, as shown by e2 and h2. Thus, for example, the anisotropy of the unidirectional alignment of the easy axis is proportional to the applied resultant magnetic field B r The intersection angle β of the direction r becomes very close to 0°.

[0202] Fig.10 Similar to Figure 7 The representation of FIG. 1 shows another embodiment and variant of the present invention. According to this variant and embodiment, the first outer pole face 20 has a maximum diameter D max The first leg portion 21 on one side a and at the maximum diameter D max The second leg portion 21 on the other side b . Two legs 21 a and 21 b Along the corresponding linear trajectory L a and L b Extension. The legs themselves are not necessarily linear, i.e. straight, but can be relative to the corresponding linear trajectory L a , L b Bending or bending forwards and backwards. The maximum diameter is along the linear path L D extend.

[0203] L a At angle α a With L D Intersect, L b At angle α b With L D intersect, in Fig.10 In the figure, the angle α b About 0°.

[0204] Different additional shapes are possible:

[0205] (1)α a =α b Two legs 21 a and 21 b Along the parallel trajectory L a , L b extend;

[0206] (2)α a =α b =0 o : If the leg itself is attached linearly and in D max If the mirror image Fig.11 The shape shown results in a ring of the first outer pole surface 20 .

[0207] exist Fig.11 In the embodiment, when viewed in the direction S1, the magnetron magnetic field B m It appears perpendicular to the direction along D max The diameter of the main length range is D max .

[0208] according to Fig.10 , the two parts 32 of the second outer surface 32 a and 32 b Along the corresponding linear trajectory L c and L d These parts themselves are not necessarily linear, but can be relative to the corresponding linear trajectory L c , L d Bend or bend forward and backward.

[0209] L c At angle α c With L D Intersect, L d At angle α d With L D intersect.

[0210] Different additional forms are possible:

[0211] (3)α c =α d , the two parts 32a and 32b follow parallel trajectories L a , L b extend;

[0212] (4)α c =α d =0 o : If the parts 32a and 32b are themselves additionally linear and are max In addition, all the conditions in (2) above prevail. Fig.11 The shape shown results in a ring shape of the first outer pole surface 20 and a shape and positioning of the portions 32 a and 32 b of the second outer pole surface 32 .

[0213] In this variant and embodiment of the invention, in particular Figure 8 The schematic diagram shows the change of magnetic field intensity, which produces:

[0214] a) By another magnetic field B a , B a 'Significantly improved magnetron effect;

[0215] b) As mentioned above, another magnetic field B a , B a ' can be or be used as an alignment field.

[0216] exist Fig.11 In FIG. 1 , a region 15 m of the substrate 13 is shown by dashed lines, which region is sputter-coated with ferromagnetic material and along which the direction of the magnetic anisotropy is aligned unidirectionally.

[0217] Please also note that if Fig.11 As shown, the first and second inner pole surfaces 22, 30, 30' may be generally uniform surfaces that overlap one another, or may be realized by a single common pole surface.

[0218] As we have already combined in context, e.g. Figure 3 As discussed, providing a second outer pole surface 32 according to (a) and a second inner pole surface as shown at 30 opens up the flexibility to position the dipole device 34 to generate an additional magnetic field B away from the magnetron. a The magnetron comprises a target 1 and a magnetron magnetic field B. m The dipole device 34 can be located on one side of the substrate 13 to be sputter coated, with the magnetron located on the other side. In particular, the dipole device 34 can be located outside the reaction space I, where the substrate 13 is sputter coated.

[0219] This leads to variants and embodiments according to the invention, such as Fig.12 Schematically shown in a simplified manner.

[0220] The vacuum housing 40 has two opposing walls 42 and 43 which define a reaction space I.

[0221] As schematically shown by the vacuum pump 46, the reaction space I operates under sputtering atmosphere conditions. In the sputtering operation, the substrate 13 is held on the substrate holder 17. A magnetron 48 is installed along the wall 42, which includes a target 1 and a magnetron magnetic field B for generating a magnetron magnetic field along the sputtering surface of the target 1. m A magnetron dipole device (not shown).

[0222] The magnetic dipole device 34 is installed on the inner surface 43 of the interface between the vacuum processing atmosphere and the non-vacuum processing atmosphere (especially the ambient atmosphere U) in the reaction space I. i behind or along the inner surface. Figure 3, reference numeral 32 again denotes a second outer pole surface, reference numeral 30 denotes a second inner pole surface. The device is particularly suitable if one substrate 13 or more than one substrate 13 with a corresponding substrate holder 17 is drivably movable along the reaction space I and over the target 1 as indicated by the double arrow M, if it is in a linear movement or in a circular movement, as will be explained later.

[0223] Fig.13 Again schematically and simplified, Fig.12 The mutual positioning and shape of the polar surfaces realized in the illustrated embodiment or variant of the invention. Fig.11 Description, Fig.13 The positioning and shape of the mid-pole surface require no further explanation.

[0224] It can be noted that the movement M of one or more substrates 13 is parallel to the other magnetic field B, viewed in the direction S1 that coincides with the z-coordinate direction. a and the magnetron magnetic field B m , making the device perfectly suitable for establishing unidirectional magnetic anisotropy in a layer of ferromagnetic material sputter-deposited on one or more substrates 13, as described for the entire surface of one or more than one substrate 13.

[0225] Fig.14 Most schematically, a substrate 13 according to a variant of the method or an embodiment of the device according to the invention is shown which is rotatable about an axis of rotation Ar. Thus, a normal n to the substrate plane of a corresponding substrate holder (not shown) is at an angle φ between 45° and 0° to the axis A. r intersect, including both limits. If the angle φ is 0°, then the normal n is parallel to the axis A r , rotation axis A r Perpendicularly to the respective base planes, the base planes are arranged along a planar trajectory LP.

[0226] Fig.15 Most schematically, a substrate 13 according to a variant of the method or an embodiment of the device according to the invention is shown, which can be rotated about an axis A. r Therefore, a normal line n on the substrate plane of the corresponding substrate holder (not shown) is at an angle φ between 45° and 90° to the axis A. r intersect, including both limits. If the angle φ is 90°, then the normal n is perpendicular to the axis A r , rotation axis A r Parallel to the respective base planes, the base planes are arranged along the cylindrical track LC.

[0227] exist Fig.14 In a variation or embodiment, the rotation axis A rIn particular, it can be perpendicular to the target plane of the target 1, while Fig.15 In a variant or embodiment, the rotation axis can in particular be parallel to the target plane of the target 1 .

[0228] Fig.16 A vacuum processing device 45 according to the invention is schematically and simplified and performs the sputtering method or substrate production method according to the invention. In principle, it is based on Fig.15 A variation or embodiment of the invention is constructed in which φ=0 o , and axis A r The vacuum processing device 45 comprises at least one sputtering and alignment device, according to the present invention and according to Figures 11 to 13 Variations or embodiments may also be based on Fig.10 The sputtering and alignment device is also referred to as an alignment stage 50. The vacuum processing device 45 includes a C and the inner cylindrical surface 52 i The outer fixed cylinder 52 and the axis A C coaxially with an outer surface 54 o The inner surface 52 of the inner fixed cylinder 54 i Together with the outer surface 54 o, it defines a cylindrical reaction space I pumped by the pumping device 56.

[0229] In the cylindrical reaction space I, the substrate holder turntable 57 can rotate around the axis A. C The rotation ω is controllably driven by the driver 58. The substrate holder turntable 57 holds a plurality of substrates 13 to be vacuum processed. Referring to the sputtering and alignment stage 50, the magnetron 48 is mounted, for example, to the outer cylinder 52 and is used to generate the alignment magnetic field B a The dipole device 34 is mounted to the inner cylinder 54, outside the reaction space I. Each area of ​​the substrate 13 is parallel to B when viewed in the z direction. a and B m The movement direction of the sputtering and alignment stage 50 is such that the z direction coincides with the S1 direction. Therefore, the direction of the magnetic anisotropy in the ferromagnetic layer deposited on the substrate 13 is aligned with respect to a reference orientation axis r (see Fig. 9 ). The substrate may be of any shape, for example disc-shaped, rectangular or square. A plurality of thin layers of ferromagnetic material may be deposited on the substrate by subsequently passing the substrate 13 through corresponding sputtering and alignment stations 50, possibly depositing intermediate non-ferromagnetic layers, for example, by means of a sputtering station 51.

[0230] Please note that according to Fig.16In the device of the embodiment of the present invention, the target of the sputtering and alignment station 50 is of ferromagnetic material. However, it is also possible to provide one or the other or all of the sputtering and alignment stations 50 with non-ferromagnetic targets and to use the additional magnetic field applied by the invention only to improve the magnetron effect. These stations 50 then become sputtering stations which are greatly improved over the sputtering and alignment stations.

[0231] In addition, Fig.16 In an embodiment, the magnetron 48 can be mounted to the inner cylinder 54, and the dipole device 34 can be mounted to or along the outer cylinder 52. This is particularly true if the inner cylinder 54 is hollow, and allows easy handling of the magnetron 48, for example for exchange of the target 1.

[0232] Obviously, the vacuum processing device 45 can include one or more sputtering and alignment stations 50 according to the present invention, one or more improved sputtering stations 50 according to the present invention, and possibly one or more additional vacuum processing stations 51 as etching stations, sputtering stations, etc.

[0233] exist Fig.16 In an embodiment or variation of the present invention, the base is arranged around the axis A. C Rotation, where the normal N on the extended surface of the base o Relative to axis A C Pointing in radial direction.

[0234] Fig.16 and 17 A further vacuum processing device 55 according to the invention is shown schematically and in a simplified manner and performs the sputtering method or substrate production method according to the invention. Fig.14 A variation or embodiment of the present invention is consistent with the above, wherein the rotation axis A r perpendicular to the target plane.

[0235] In this embodiment or variation, the substrate 13 is deposited on a disk-shaped or annular substrate turntable 67 for a plurality of substrates 13. The disk-shaped or annular substrate turntable 67 can rotate about an axis A. D Rotation is controllably driven by a driver 68. The vacuum housing 60 defines a disk-shaped or annular reaction space I, wherein a disk-shaped or annular substrate turntable 67 is rotatable. D In addition to the coaxial cylindrical wall 69, the vacuum housing 60 also includes an inner surface 70 i The top wall 70 and the inner surface 72 i The bottom wall 72 is perpendicular to the axis A. D The substrate 13 is arranged along the periphery of the substrate holder turntable 67, and its normal line N o On its axis parallel to A D on the extended surface.

[0236] In the sputtering and alignment stage 50, the magnetic dipole device 34 is installed outside the reaction space I along the bottom wall 72 or outside the bottom wall 72, and the magnetron 48 is installed to the top wall 70. The sputtering and alignment stage 50 according to the present invention is installed with the axis A D The moving path of the rotating substrate 13 is aligned.

[0237] According to Fig.16 The variation and embodiment are similar, in Fig.17 In variations and embodiments, multiple sputtering and alignment stations 50 may also be provided in order to deposit multiple thin ferromagnetic layers on the substrate 13, possibly with intervening layers of non-ferromagnetic material sputter-deposited by the sputtering stations 51.

[0238] If the table 50 is not used to align the magnetic field along the orientation axis in the corresponding deposited layer of ferromagnetic material, but is used only as a modified magnetron sputtering table, the substrate 13 can be oriented about its central axis A. 13 Driven to rotate ω 13 , this is Fig.16 The embodiments are also common.

[0239] With reference to the use of a sputtering table as an alignment table, it should be considered that if the substrate 13 is moved through such a table 50 so as to be aligned along the axis r (see Fig. 9 ) is aligned with the magnetic anisotropy in the deposited ferromagnetic layer, the substrate should pass through the stage 50, and the synthetic magnetic field B relative to the stage 50 r The direction of the Fig.18 An example is given in .

[0240] When viewed in the direction S1, the fixed stage 50 follows the linear trajectory L 50 Generates a uniform synthetic magnetic field B in one direction r The substrate 13 moves relative to the stage 50 by M. 13 , whereby the entire extended surface of the substrate passes through field B r The area of ​​V 13 represents the orientation of the substrate 13 in the x / y plane. At least when the substrate 13 is exposed to the magnetic field B of the stage 50 r During the time span, the orientation V of the substrate 13 13 and trajectory L 50 The angle γ between them should remain constant.

[0241] In accordance with Fig.16 In variations and embodiments, this is achieved.

[0242] In accordance with Fig.17 In the variant and embodiment, the base 13 is arranged around the axis A D The rotational movement of the one or more stages 50 used as sputtering and alignment stages is additionally controlled to meet the requirements as in Fig.18 The conditions are described in the context of .

[0243] Fig.19 The diagram shows schematically and in a simplified manner the Fig.18 Zhongzai Fig.17 One possibility is the conditions illustrated in the variations and embodiments.

[0244] As schematically shown, a stage 50 serving as a sputtering and alignment stage is rigidly mounted relative to a vacuum vessel 60. With respect to a selected angular reference R, the resultant magnetic field B r The angle β of the orientation direction o is known.

[0245] The substrate 13, which is shown as a rectangular shape but can be of any desired shape, is held on a substrate holder 66 which can be rotated about an axis A on a substrate holder turntable 67. 13 Rotation. A reference orientation direction on the substrate is established and thus known. This reference orientation can be marked as flat on the substrate 13, but does not have to be physically identifiable on the substrate 13. 13 The coupled angle sensor 74 measures the main orientation direction V of the substrate. 13 and magnetic field B r Direction V 50 The main angle between γ'. Through the negative feedback control loop, the angle γ' is controlled to be at the selected angle value γ o The main measured angle γ' is compared with the expected angle γ at the difference forming unit 76. o The comparison is made and the resulting difference Δ is directed as a control difference via an appropriate controller (not shown) to a control for the substrate holder 66 about the axis A. 13 The control input of the rotation drive 80 is used as a regulator in the negative feedback control loop. r The direction of o Pass station 50.

Claims

1. A method for magnetron sputtering deposition or manufacturing a substrate coated with a magnetron sputtering deposited layer, comprising: A target (1) of ferromagnetic material having a sputtering surface (11) and extending along a target plane (9) is provided in a vacuum housing (4, 40, 60); Providing a substrate (13) having a surface (15) to be sputter coated; Providing a reaction space (I) between the sputtering surface (11) and the surface to be sputter-coated (15); A magnetron magnetic field (B) is generated in the reaction space (I) m ), whose magnetic field lines are in an arc shape between a first outer pole surface (20) and a first inner pole surface (22) of the sputtering surface (11), and when viewed in a direction (S1) toward the sputtering surface (11), the first outer pole surface (20) forms a closed loop around the first inner pole surface (22) on the sputtering surface (11); A further magnetic field (B) is generated in the reaction space (I) a ); By the magnetron magnetic field (B m ) and the additional magnetic field (B a ) are superimposed to generate a synthetic magnetic field (B) in the reaction space (I). r ); Controlling the direction of magnetic anisotropy in a layer sputter-deposited on said substrate by said synthetic magnetic field, becoming unidirectional along at least more than 50% of said surface of said substrate to be sputter-coated; generating said synthetic magnetic field along more than 50% of the surface area of ​​said surface of said substrate to be sputter coated, It is characterized in that generating the further magnetic field between at least one second outer pole surface (32) and at least one second inner pole surface (30), wherein the at least one second inner pole surface is within the ring of the first outer pole surface as viewed in a direction towards the sputtering surface and the at least one second outer pole surface is distal from the second inner pole surface; The magnetic polarity of the first outer pole surface and the magnetic polarity of the at least one second outer pole surface are selected to be equal, and the magnetic polarity of the first inner pole surface and the magnetic polarity of the at least one second inner pole surface are selected to be equal, at least in a region of more than 50% of the volume of the reaction space (I), the resultant magnetic field (B) parallel to the target plane (9) at the trajectory in the reaction space (I) is r ) is greater than the magnetron magnetic field (B) parallel to the target plane (9) at the trajectory. m )’s directional component.

2. The method according to claim 1 comprises tailoring the magnetron magnetic field and the further magnetic field in the reaction space so that, viewed in the direction towards the sputtering surface, the field lines of the further magnetic field are parallel to the field lines of the magnetron magnetic field along at least a portion of the closed loop.

3. The method of claim 1, comprising relatively moving the substrate and the target such that the substrate passes through the target. 4 . The method according to claim 3 , comprising providing more than one of the substrates and subsequently performing the method according to at least one of claims 1 to 3 on the more than one of the substrates.

5. The method according to claim 3, comprising performing the method according to at least one of claims 1 to 3 on the substrate more than once subsequently.

6. The method according to claim 1 , comprising establishing the magnetron magnetic field and the further magnetic field such that, viewed towards the sputtering surface, the field lines of the resultant magnetic field extend parallel to the orientation axis over more than 50% of the sputtering surface, and The substrate is moved relative to the target at a constant substrate orientation angle relative to the orientation axis.

7. The method of claim 3, comprising rotating the substrate relative to the target about an axis of rotation remote from the substrate.

8. The method according to any one of claims 1 to 3, comprising generating a strength of the additional magnetic field that is greater than the strength of the magnetron magnetic field closer to the surface to be sputter coated, and generating a strength of the additional magnetic field that is less than the strength of the magnetron magnetic field farther away from the surface to be sputter coated.

9. A method according to any one of claims 1 to 3, the first and second outer pole surfaces and the first and second inner pole surfaces being fixed relative to each other.

10. A sputtering device, comprising: A vacuum housing, and wherein: a substrate holder defining a substrate plane and adapted to hold a substrate having a two-dimensional extension of a surface to be sputter coated; a target of ferromagnetic material mounted to a target holder and extending along a target plane and having a sputtering surface and a back surface; a magnetron magnetic dipole device, viewed in a direction toward the sputtering surface, comprising a first outer pole surface and a first inner pole surface, the first outer pole surface forming a closed loop around the first inner pole surface and along the sputtering surface, the first outer pole surface having one magnetic polarity, and the first inner pole surface having another magnetic polarity; Another magnetic dipole device, It is characterized in that the further magnetic dipole arrangement having at least one second outer pole surface and at least one second inner pole surface, and wherein, viewed in a direction towards the sputtering surface, the at least one second inner pole surface is within the ring of the first outer pole surface and the at least one second outer pole surface is distal to the second inner pole surface, the second outer pole surface having the one magnetic polarity and the second inner pole surface having the other magnetic polarity, The second outer pole surface is located outside the perimeter of the substrate on the substrate holder, viewed in the direction towards the sputtering surface, The ring of the first outer pole surface has a maximum ring diameter, and when viewed in the direction towards the sputtering surface, the at least one second outer pole surface includes a limited range of means of at least one second pole surface on one side of the maximum ring diameter and a further limited range of at least one second pole surface on the other side of the maximum ring diameter.

11. The sputtering device according to claim 10, wherein: The at least one second outer pole surface is located outside the first outer pole surface when viewed in the direction towards the sputtering surface.

12. The sputtering device according to claim 10 or 11, wherein: The second outer pole surface is located outside the perimeter of the target, viewed in a direction toward the sputtering surface.

13. The sputtering device according to claim 10 or 11, wherein: The magnetron magnetic dipole arrangement and the further magnetic dipole arrangement are tailored so that the field lines of the magnetron magnetic field generated by the magnetron magnetic dipole arrangement and the field lines of the further magnetic field generated by the further magnetic dipole arrangement are parallel to each other along at least a portion of the closed loop and as viewed in a direction towards the sputtering surface.

14. The sputtering device according to claim 10 or 11, wherein: The first outer pole surface is a portion of the sputtering surface.

15. The sputtering device of claim 10 or 11, wherein the at least one second inner pole surface is a portion of the sputtering surface.

16. The sputtering device of claim 10 or 11, wherein the at least one second inner pole surface is distal to the sputtering surface.

17. The sputtering device of claim 16, wherein the at least one second inner pole surface is located opposite the sputtering surface relative to the substrate plane.

18. The sputtering device according to claim 10 or 11, wherein: Viewed parallel to the target plane, the at least one second outer pole surface is in at least one of the following positions: relative to the substrate plane and opposite to the target plane; aligning with the base plane; between the target plane and the substrate plane and closer to the substrate plane than the target plane; between the target plane and the substrate plane and farther from the substrate plane than from the target plane; between the target plane and the substrate plane and equidistant from the substrate plane and the target plane; aligning with the target plane; The target plane is opposite to the substrate plane.

19. The sputtering device according to claim 10 or 11, wherein: Viewed in the direction towards the sputtering surface, the first inner pole surface is a further closed ring.

20. The sputtering device according to claim 19, wherein: Viewed in the direction towards the sputtering surface, the second inner pole surface is within the further closed loop.

21. The sputtering device according to claim 10 or 11, wherein: Viewed in a direction toward the sputtering surface, at least portions of the first inner pole surface and the second inner pole surface overlap.

22. The sputtering device according to claim 10 or 11 comprises, when viewed in the direction toward the sputtering surface, a first leg of the first outer pole surface extends along a first linear trajectory on one side of the maximum ring diameter, and a second leg of the first outer pole surface extends along a second linear trajectory on the other side of the maximum ring diameter, when viewed in the direction toward the sputtering surface, the device extends along the first leg, and the additional device extends along the second leg.

23. The sputtering device according to claim 22, wherein: Viewed in the direction towards the sputtering surface, the first and second legs extend linearly.

24. The sputtering device according to claim 23, wherein: The first leg and the second leg are parallel to each other when viewed in a direction toward the sputtering surface.

25. The sputtering device according to claim 10 or 11, wherein: Viewed in the direction of the sputtering surface, the device and the further device extend along corresponding linear paths.

26. The sputtering device according to claim 25, wherein: Viewed in the direction of the sputtering surface, the device and the further device extend linearly.

27. The sputtering device according to claim 24, wherein: Viewed in the direction of the sputtering surface, the device and the further device extend next to the respective leg at a respective constant spacing.

28. The sputtering device according to claim 10 or 11, wherein: A portion of the vacuum exposed surface of the vacuum housing is the at least one second outer pole surface, or a vacuum exposed surface of a portion mounted to the vacuum housing is the at least one second outer pole surface.

29. The sputtering device according to claim 10 or 11 comprises at least one further vacuum handling device, wherein the substrate holder and the target holder on the one hand and at least one further vacuum handling device on the other hand can be driven to move relative to each other so that the substrate holder passes over the sputtering surface and the substrate holder moves back and forth to at least one further vacuum handling device.

30. The sputtering apparatus of claim 29, comprising more than one said substrate holder movable relative to said sputtering surface and at least one further vacuum handling device.

31. The sputtering device according to claim 29, wherein at least one of the other vacuum processing devices is a sputtering device comprising: A vacuum housing, and wherein: a substrate holder defining a substrate plane and adapted to hold a substrate having a two-dimensional extension of a surface to be sputter coated; a target of ferromagnetic material mounted to a target holder and extending along a target plane and having a sputtering surface and a back surface; a magnetron magnetic dipole device, viewed in a direction toward the sputtering surface, comprising a first outer pole surface and a first inner pole surface, the first outer pole surface forming a closed loop around the first inner pole surface and along the sputtering surface, the first outer pole surface having one magnetic polarity, and the first inner pole surface having another magnetic polarity; Another magnetic dipole device, It is characterized in that the further magnetic dipole arrangement having at least one second outer pole surface and at least one second inner pole surface, and wherein, viewed in a direction towards the sputtering surface, the at least one second inner pole surface is within the ring of the first outer pole surface and the at least one second outer pole surface is distal to the second inner pole surface, the second outer pole surface having the one magnetic polarity and the second inner pole surface having the other magnetic polarity, The second outer pole surface is located outside the perimeter of the substrate on the substrate holder, viewed in the direction towards the sputtering surface, The ring of the first outer pole surface has a maximum ring diameter, and when viewed in the direction towards the sputtering surface, the at least one second outer pole surface includes a limited range of means of at least one second pole surface on one side of the maximum ring diameter and a further limited range of at least one second pole surface on the other side of the maximum ring diameter.

32. The sputtering device according to claim 29, wherein: At least one of the sputtering devices and viewed in the direction towards its sputtering surface, the magnetron magnetic dipole device and the further magnetic dipole device are constructed so that the field lines of the resultant magnetic field generated by the superposition of the magnetron magnetic field generated by the magnetron magnetic dipole device and the further magnetic field generated by the further magnetic dipole device are parallel and extend in the direction of the orientation axis over more than 50% of the sputtering surface, and the relative movement of at least one substrate holder is controlled in such a way that the at least one substrate holder passes over the sputtering surface with a constant angular orientation relative to the orientation axis.

33. The sputtering device according to claim 29, wherein: The substrate holder is drivably relatively rotatable about a rotation axis remote from the substrate holder.

34. The sputtering apparatus of claim 33, wherein the rotation axis intersects a normal on the substrate plane at an angle between 0° and 45°, including both limits.

35. The sputtering device of claim 34, wherein the rotation axis intersects perpendicularly with a normal line on the substrate plane.

36. The sputtering apparatus of claim 34, wherein the rotation axis intersects a normal to the substrate plane at an angle between 45° and 90°, including both limits.

37. The sputtering apparatus of claim 36, wherein the rotation axis and a normal to the substrate plane are parallel.

38. A sputtering apparatus according to claim 10 or 11, the magnetron magnetic dipole arrangement and the further magnetic dipole arrangement being fixed at least relative to each other.

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