A voltage doubler rectifier module and a voltage doubler rectifier circuit using the module

Abstract

The invention relates to a voltage doubling rectifier module, which belongs to the field of semiconductor electronic devices and is characterized in that it comprises a plurality of pads and at least two chipsets connected in series, wherein each chipset is formed by connecting a first chip and a second chip in series, wherein the first chip adopts a P-type substrate diode chip, and the second chip adopts an N-type substrate diode chip; the chipset is integrated in a package having a plurality of pins, wherein the first chip and the second chip are connected to the relevant pins of the package through relevant pads, and the chipsets connected in series are named the Nth chipset and the N+1th chipset in sequence along the current direction, wherein the second chip in the Nth chipset and the first chip in the N+1th chipset adopt the same pad; the invention integrates N-type substrate and P-type substrate chips into one, thereby realizing rectification from 3 times the voltage to N times the voltage, and further realizing flat packaging of the module and miniaturization of the product.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor electronic devices, and in particular to a voltage doubling rectifier module and a voltage doubling rectifier circuit using the module. Background Art

[0002] In the conversion of AC or DC high-voltage circuits, low-voltage DC (battery-powered) or DC after AC rectification and filtering is usually passed through a self-excited oscillation circuit, and the voltage is increased by a high-voltage transformer to convert it into high-frequency, high-voltage AC, and then rectified to output high-voltage DC. However, this voltage is often far from meeting the final use requirements, and the voltage needs to be further increased to become ultra-high voltage DC, which requires voltage doubling rectification, such as Figure 1-Figure 5 The voltage doubler rectifier circuit shown.

[0003] The existing voltage doubler rectifier circuit usually uses more than 3 high-voltage rectifier diodes and N high-voltage capacitors, and each high-voltage diode usually consists of 2-3 chips. This high-voltage diode usually uses an acid pickling process, which uses a large amount of strong acid and causes serious pollution.

[0004] With the development of integrated circuit production technology, electronic products have higher and higher requirements for miniaturization, integration, reliability and green environmental protection. The existing high-voltage technology still uses multiple discrete devices for voltage doubling rectification, and the pickling process used for the key high-voltage diode cannot meet the requirements for environmental protection. This will inevitably result in the volume and cost of the circuit board being unable to be well controlled, affecting the competitiveness and wide application of the entire product, and the low degree of integration affects the miniaturization of the circuit. Summary of the invention

[0005] The technical problem to be solved by the present invention is to address the deficiencies in the prior art and to provide a voltage doubling rectifier module integrating N-type substrate and P-type substrate chips and a voltage doubling rectifier circuit using the module, which can achieve rectification from 3 times the voltage to N times the voltage, and further achieve flat packaging of the module, making the product miniaturized, easy to use, easy to install, reliable to use, and cost-effective.

[0006] The technical solution of the present invention to solve the above technical problems is as follows: a voltage doubling rectifier module, characterized in that it includes multiple pads and at least two chipsets connected in series, each chipset is composed of a first chip and a second chip connected in series, the first chip uses a P-type substrate diode chip, and the second chip uses an N-type substrate diode chip; the chipset is integrated in a package with multiple pins, the first chip and the second chip are connected to the relevant pins of the package through relevant pads, and the chipsets connected in series are named the Nth chipset and the N+1th chipset in sequence along the current direction, wherein the second chip in the Nth chipset and the first chip in the N+1th chipset use the same pad.

[0007] Furthermore, the first chip is a glass passivation GPP chip, a photoresist passivation chip, an epitaxial planar diode chip, an electrical ordinary high voltage diode chip ( V ZR >1000V) or high voltage switching diode chip ( T RR ≤500ns).

[0008] Furthermore, the first chip and the second chip in the same chipset are connected to each other through metal wires on their front surfaces.

[0009] Furthermore, the metal lead wire is made of silicon aluminum wire, thick aluminum wire, gold wire or copper wire.

[0010] Furthermore, the number of chipsets of the voltage-doubling rectifier module is set to 3, 4, 5 or 6. When the voltage-doubling rectifier module is provided with three chipsets, at least two chipsets are connected in series.

[0011] Furthermore, when the voltage doubler rectifier module is provided with three chipsets and two of the chipsets are connected in series, another chipset is provided in the package independently of the two chipsets.

[0012] Furthermore, the package body adopts a 4-pin, 7-pin or 16-pin package structure.

[0013] Furthermore, effective output terminals are drawn out between adjacent chip groups.

[0014] Furthermore, the relevant pads connected to the first chip or the second chip are connected to the relevant pins of the package, and the pins serve as effective output terminals of the voltage doubler rectifier module.

[0015] And a voltage doubling rectifier circuit, characterized in that the voltage doubling rectifier module and a plurality of high-voltage capacitors as described above are used, the effective output terminals of the voltage doubling rectifier module and the high-voltage capacitors form an increasing loop, the AC voltage is gradually increased to achieve multiple voltage rectification.

[0016] The beneficial effects of the present invention are as follows: the present invention forms a chipset by connecting a P-type substrate and an N-type substrate in series, and multiple chipsets as above are connected in series to form a connection loop, and terminals are drawn between adjacent chipsets to realize a multi-chip combination of multi-voltage rectifier modules, thereby realizing voltage double rectification of the high-voltage circuit output; the flat packaging of the module is realized by the above design, the integration is greatly improved, the product is miniaturized, easy to use, easy to install, reliable to use, and cost-effective. The present invention is applied to AC / DC-DC high-voltage conversion circuits in a simple and reliable manner. According to different applications, rectification from 3 times to N times of voltage can be realized, such as in circuits such as electric mosquito swatters, negative ion generators (air purification), ozone generators (disinfection), microwave ovens, etc., and has a wide range of market value. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a triple voltage rectifier circuit diagram of the prior art;

[0018] Figure 2 It is a triple voltage rectifier circuit diagram of the prior art;

[0019] Figure 3 It is a four-fold voltage rectifier circuit diagram of the prior art;

[0020] Figure 4 It is a five-times voltage rectifier circuit diagram of the prior art;

[0021] Figure 5 It is a six-fold voltage rectifier circuit diagram of the prior art;

[0022] Figure 6 is a schematic structural diagram of a triple voltage rectifier module according to an embodiment of the present invention;

[0023] Figure 7 is a schematic diagram of the application circuit connection of the triple voltage rectifier module according to an embodiment of the present invention;

[0024] Figure 8 is a schematic structural diagram of a triple voltage rectifier module according to another embodiment of the present invention;

[0025] Fig. 9 is a schematic diagram of the application circuit connection of a triple voltage rectifier module according to another embodiment of the present invention;

[0026] Fig.10 is a schematic structural diagram of a quadruple voltage rectifier module according to an embodiment of the present invention;

[0027] Fig.11 is a schematic diagram of the application circuit connection of the quadruple voltage rectifier module according to an embodiment of the present invention;

[0028] Fig.12 is a schematic structural diagram of a five-times-voltage rectifier module according to an embodiment of the present invention;

[0029] Fig.13 is a schematic diagram of the application circuit connection of the five-times voltage rectifier module according to an embodiment of the present invention;

[0030] Fig.14 It is a schematic diagram of the structure of a six-fold voltage rectifier module according to an embodiment of the present invention;

[0031] Fig.15 This is a schematic diagram of the application circuit connection of the six-fold voltage rectifier module according to an embodiment of the present invention;

[0032] In the figure: 1, 3, 5, 7, 9, 11. First chip, 2, 4, 6, 8, 10, 12. Second chip, 13, 14, 15, 16, 17, 18, 19. Metal frame base island, 20. Metal lead, 21. Package body. DETAILED DESCRIPTION

[0033] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The embodiments given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0034] Example 1

[0035] like Figure 6 As shown, this embodiment combines multiple discrete high-voltage diodes used in a voltage-doubling rectifier circuit, divides 6 high-voltage diode chips into 3 chip groups, and connects 2 chips in series in each group to form a triple voltage rectifier circuit, which is integrated in a package. The package contains 4 copper frames (PADs) for soldering chips, and multiple metal leads; wherein the first chip and the second chip, the third chip and the fourth chip, and the fifth chip and the sixth chip form a series structure, and each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip, which are respectively soldered to 4 pad base islands; and there are 4 output terminals to the outside.

[0036] Specifically, there are 6 diode chips inside the package, 3 P-type substrate structure chips (1, 3, 5), and three N-type substrate chips (2, 4, 6), which are respectively welded to 4 metal frame base islands (13, 14, 15, 16). Chip 1 and chip 2 are a chip group, chip 3 and chip 4 are a chip group, and chip 5 and chip 5 are a chip group. There are 4 base island pads (PADs) in total, among which the second chip in the Nth chip group and the first chip in the N+1th chip group use the same pad, that is, Figure 6 Chip 4 and chip 5 share a pad, and chip 6 and chip 1 share a pad; the front of the chip is connected with a metal lead (20#-3,6). The lead process is ultrasonic bonding, gold wire ball welding and laser welding. The material is compatible with silicon aluminum wire, thick aluminum wire, gold wire and copper wire. This module 1 has a total of 3 or 6 internal lead designs, and the module is sealed with epoxy resin.

[0037] The package adopts SOP4, a four-pin flat package structure, which is used in 3 times voltage rectifier circuit. Figure 7 , suitable for circuit Figure 1 Principle application.

[0038] Example 2

[0039] like Figure 8 As shown, this embodiment combines multiple discrete high-voltage diodes used in a voltage-doubling rectifier circuit, divides 6 high-voltage diode chips into 3 chip groups, and connects 2 chips in series in each group to form a triple voltage rectifier circuit, which is integrated in a package. The package contains 5 copper frames (PADs) for soldering chips, and multiple metal leads; wherein the first chip and the second chip, the third chip and the fourth chip form a series structure, the fifth chip and the sixth chip are connected in series and are independently arranged in the package from the above four chips, and each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip, which are respectively soldered to 5 pad base islands; and there are 5 effective output terminals to the outside.

[0040] Specifically, there are 6 diode chips, 3 P-type substrate structure chips (1, 3, 5), and 3 N-type substrate chips (2, 4, 6) inside the package, which are respectively welded to 5 metal frame base islands (13, 14, 15, 16, 17), with a total of 5 base island pads (PAD), where the second chip in the Nth chip group and the first chip in the N+1th chip group use the same pad, that is, Figure 8 The chip 4 and chip 5 shown in the figure share the pad; the front of the chip is connected with metal leads (20#-3 or 6), the lead process is ultrasonic bonding, gold wire ball welding and laser welding, and the material is compatible with silicon aluminum wire, thick aluminum wire, gold wire and copper wire. There are 3 or 6 internal lead designs for this module 2; the module adopts epoxy resin plastic sealing 7-pin packaging structure, of which 2 pins are empty pins, and the number of package pins is not limited to 7 pins. Other numbers of pins are allowed as needed. This embodiment is applied to a 3-fold voltage rectifier circuit, see Fig. 9 , suitable for circuit Figure 2 Principle application.

[0041] Example 3

[0042] like Fig.10As shown, this embodiment combines multiple discrete high-voltage diodes used in a voltage-doubling rectifier circuit, divides 8 high-voltage diode chips into 4 chip groups, and connects 2 chips in series in each group to form a four-fold voltage rectifier circuit, which is integrated in a package. The package contains 6 copper frames (PADs) for soldering chips, and multiple metal leads; wherein the first chip and the second chip, the third chip and the fourth chip, the fifth chip and the sixth chip, and the seventh chip and the eighth chip form a series structure, and each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip, which are respectively soldered to 5 pad base islands; and there are 5 effective output terminals to the outside.

[0043] Specifically, there are 8 diode chips, 4 P-type substrate structure chips (1, 3, 5, 7), and 4 N-type substrate chips (2, 4, 6, 8) inside the package; they are respectively welded to 5 metal frame base islands (13, 14, 16, 17, 18), with a total of 6 base island pads (PADs), one of which is empty, and the second chip in the Nth chip group and the first chip in the N+1th chip group use the same pad, that is, Fig.10 The chip 8 shown in the figure shares a pad with the chip 5, the chip 6 shares a pad with the chip 3, and the chip 4 shares a pad with the chip 1; the front of the chip is connected with metal leads (20#-4 or 8), the lead process is ultrasonic bonding, gold wire ball welding and laser welding, and the material is compatible with silicon aluminum wire, thick aluminum wire, gold wire and copper wire. There are 4 or 8 internal lead designs for this module 3; the module adopts an epoxy resin plastic encapsulation 16-pin packaging structure, of which 11 pins are empty pins. The number of package pins is not limited to 16 pins, and other numbers of pins are allowed as needed. This embodiment is applied to a 4-fold voltage rectifier circuit, see Fig.11 , suitable for circuit Figure 3 Principle application.

[0044] Example 4

[0045] like Fig.12 As shown, this embodiment combines multiple discrete high-voltage diodes used in a voltage-doubling rectifier circuit, divides 10 high-voltage diode chips into 5 chip groups, and connects 2 chips in series in each group to form a five-fold voltage rectifier circuit, which is integrated in a package. The package contains 6 copper frames (PADs) for soldering chips, and multiple metal leads; wherein the first chip and the second chip, the third chip and the fourth chip, the fifth chip and the sixth chip, the seventh chip and the eighth chip, and the ninth chip and the tenth chip form a series structure, and each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip, which are respectively soldered to 6 pad base islands; and there are 6 effective output terminals to the outside.

[0046] Specifically, there are 10 diode chips, 5 P-type substrate structure chips (1, 3, 5, 7, 9), and 5 N-type substrate chips (2, 4, 6, 8, 10) inside the package; they are respectively welded to 6 metal frame base islands (13, 14, 15, 16, 17, 18), with a total of 6 base island pads (PAD), where the second chip in the Nth chip group and the first chip in the N+1th chip group use the same pad, that is, Fig.12 The chip 10 shown in the figure shares a pad with the chip 7, the chip 8 shares a pad with the chip 5, the chip 6 shares a pad with the chip 3, and the chip 4 shares a pad with the chip 1; the front of the chip is connected with metal leads (20#-5 or 10), the lead process is ultrasonic bonding, gold wire ball welding and laser welding, and the material is compatible with silicon aluminum wire, thick aluminum wire, gold wire and copper wire. There are 5 or 10 internal lead designs for this module 4; the module adopts an epoxy resin plastic encapsulation 16-pin packaging structure, of which 10 pins are empty pins. The number of package pins is not limited to 16 pins, and other numbers of pins are allowed as needed. This embodiment is applied to a 5-fold voltage rectifier circuit, see Fig.13 , suitable for circuit Figure 4 Principle application.

[0047] Example 5

[0048] like Fig.14 As shown, this embodiment combines multiple discrete high-voltage diodes used in a voltage-doubling rectifier circuit, divides 12 high-voltage diode chips into 6 chip groups, and connects 2 chips in series in each group to form a six-fold voltage rectifier circuit, which is integrated in a package. The package contains 6 copper frames (PADs) for soldering chips, and multiple metal leads; wherein the first chip and the second chip, the third chip and the fourth chip, the fifth chip and the sixth chip, the seventh chip and the eighth chip, the ninth chip and the tenth chip, and the eleventh chip and the twelfth chip form a series structure, and each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip, which are respectively soldered to 7 pad base islands; there are 7 effective output terminals to the outside.

[0049] Specifically, there are 12 diode chips, 6 P-type substrate structure chips (1, 3, 5, 7, 9, 11), and 6 N-type substrate chips (2, 4, 6, 8, 10, 12) inside the package; they are respectively welded to 7 metal frame base islands (13, 14, 15, 16, 17, 18, 19), with a total of 7 base island pads (PAD), where the second chip in the Nth chip group and the first chip in the N+1th chip group use the same pad, that is, Fig.14The chip 12 shown in the figure shares a pad with the chip 9, the chip 10 shares a pad with the chip 7, the chip 8 shares a pad with the chip 5, the chip 6 shares a pad with the chip 3, and the chip 4 shares a pad with the chip 1; the front of the chip is connected with metal leads (20#-6 or 12), the lead process is ultrasonic bonding, gold wire ball welding and laser welding, and the material is compatible with silicon aluminum wire, thick aluminum wire, gold wire and copper wire. There are 6 or 12 internal lead designs for this module 5; the module adopts an epoxy resin plastic encapsulated 16-pin packaging structure, of which 9 pins are empty pins. The number of package pins is not limited to 16 pins, and other numbers of pins are allowed as needed. This embodiment is applied to a 6-fold voltage rectifier circuit, see Fig.15 , suitable for circuit Figure 5 Principle application.

[0050] In the above embodiment, all the module integrated chips 1, 3, 5, 7, 9, and 11 are diode chips made of P-type substrates, and all the module integrated chips 2, 4, 6, 8, 10, and 12 are diode chips made of N-type substrates;

[0051] Every two diode chips in the module group form a voltage doubler rectifier unit, and each unit consists of a P-type substrate diode and an N-type substrate diode connected in series;

[0052] Chip process and structure type: glass passivation GPP process, photoresist passivation process, epitaxial planar process; electrical properties of ordinary high-voltage diodes ( V ZR >1000V), high voltage switching diode chip ( T RR ≤500ns).

[0053] The above embodiments provide a variety of voltage doubler rectifier modules, whose packages include 4-pin, 7-pin and 16-pin packages to achieve different voltage doubler rectifier modes, but the number of package pins and the number of series-parallel groups are not limited to the above embodiments. Considering the flexibility of voltage doubler rectifier, the multi-base island pad design ensures the flexibility of circuit use and the insulation of the voltage doubler rectifier circuit.

[0054] In the module circuit of the present invention, every two high-voltage diode chips with different substrates form a unit group, and the diode breakdown voltage of each unit group can reach more than 4000V; the unit groups are designed to be connected in series in a forward direction (due to application requirements, an independent unit group is designed in the triple voltage rectifier circuit of Example 2); lead terminals (pins) are designed between the unit groups, and the pins and the external high-voltage capacitors form an increasing loop, which gradually increases the AC voltage and realizes multiple voltage rectification.

[0055] The present invention realizes that a single module can form a multi-voltage rectification mode. Compared with the prior art, the rectifier diode chip in the combined circuit is built into the module group, rather than a discrete single device. The integration is greatly improved without increasing the cost, and it has a better cost performance. It is particularly suitable for electric mosquito swatters, negative ion generators (air purification), ozone generators (disinfection), microwave ovens and other circuits that have high requirements on the volume and cost of the power board, and has a wide market value. .

[0056] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art may combine the different embodiments or examples and the features of the different embodiments or examples described in this specification without contradiction.

[0057] Combine and combination.

[0058] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A voltage doubler rectifier module, characterized in that: A voltage doubler rectifier module used as a voltage doubler rectifier circuit comprises a plurality of pads and at least two chip groups connected in series, each chip group is formed by connecting a first chip and a second chip in series, the first chip adopts a P-type substrate diode chip, and the second chip adopts an N-type substrate diode chip; The chipset is integrated in a package having a plurality of pins, and the package adopts a 4-pin, 7-pin or 16-pin package structure; The first chip and the second chip are connected to the relevant pins of the package body through relevant pads, and the chipsets connected in series are named the Nth chipset and the N+1th chipset in sequence along the current direction, wherein the second chip in the Nth chipset and the first chip in the N+1th chipset use the same pad; Effective output terminals are drawn out between adjacent chip groups.

2. The voltage doubler rectifier module according to claim 1, characterized in that: The first chip is a glass passivation GPP chip, a photoresist passivation chip, an epitaxial planar diode chip, an electrically common high-voltage diode chip or a high-voltage switching diode chip.

3. The voltage doubler rectifier module according to claim 1, characterized in that: The first chip and the second chip in the same chipset are connected via metal leads on their front surfaces.

4. The voltage doubler rectifier module according to claim 3, characterized in that: The metal lead wire is made of silicon aluminum wire, thick aluminum wire, gold wire or copper wire.

5. The voltage doubler rectifier module according to claim 1, characterized in that: The number of chipsets of the voltage-doubling rectifier module is set to 3, 4, 5 or 6. When the voltage-doubling rectifier module is provided with three chipsets, at least two chipsets are connected in series.

6. The voltage doubler rectifier module according to claim 5, characterized in that: When the voltage doubler rectifier module is provided with three chip sets and two of the chip sets are connected in series, the other chip set is independently provided in the package body from the two chip sets.

7. The voltage doubler rectifier module according to claim 1, characterized in that: The relevant pad connected to the first chip or the second chip is connected to the relevant pin of the package body, and the pin serves as an effective output terminal of the voltage doubler rectifier module.

8. A voltage doubler rectifier circuit, characterized in that: By using the voltage doubling rectifier module as described in any one of claims 1 to 7 and a plurality of high-voltage capacitors, the effective output terminals of the voltage doubling rectifier module and the high-voltage capacitors form an increasing loop, which gradually increases the AC voltage to achieve multiple voltage rectification.

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