Ion implantation device and ion implantation method

Abstract

The object of the present invention is to appropriately monitor the generation of neutron beams at low cost. An ion implantation device (100) comprises: a plurality of devices arranged along a beam line (BL) for transmitting an ion beam; a plurality of neutron beam measuring devices (51, 52, 53, 54) arranged at a plurality of positions near the beam line and measuring neutron beams that may be generated at a plurality of positions on the beam line due to collision of a high-energy ion beam; and a control device for monitoring at least one of the plurality of devices based on a measurement value of at least one of the plurality of neutron beam measuring devices (51-54).

Description

Technical Field

[0001] This application claims priority based on Japanese Patent Application No. 2019-051015 filed on March 19, 2019. The entire contents of the Japanese Patent Application are incorporated herein by reference.

[0002] The invention relates to an ion implantation device and an ion implantation method. Background Art

[0003] In the semiconductor manufacturing process, the process of implanting ions into semiconductor wafers is carried out in a standardized manner for the purpose of changing the conductivity, changing the crystal structure of the semiconductor wafer, etc. The device used in this process is generally called an ion implantation device. The implantation energy of the ions is determined according to the desired implantation depth of the ions implanted near the surface of the wafer. A low-energy ion beam is used for implantation into a shallow area, and a high-energy ion beam is used for implantation into a deep area.

[0004] In recent years, in order to implant deeper areas, there has been an increasing demand for ion beams that use higher energy than conventional high-energy ion implantation, so-called ultra-high energy ion implantation. Ions accelerated to ultra-high energy have the potential to collide with components in the beam line of the ion implantation device and cause nuclear reactions. The resulting nuclear reactions may generate radiation such as neutron rays.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-206504

[0006] In the case of an ultra-high energy ion implantation device that is concerned about the generation of neutron beams, it is desirable to monitor the generation of neutron beams along the entire beamline due to the long beamline for accelerating and transmitting ion beams. On the other hand, since the amount of neutron beams generated is not expected to be very large, it is desirable to accurately measure neutron beams by arranging a neutron beam detector near the beamline. However, if a plurality of neutron beam detectors are arranged along a long beamline in order to accurately measure neutron beams along the entire beamline, the cost will be greatly increased. Summary of the invention

[0007] One of the exemplary objects of one embodiment of the present invention is to provide an ion implantation apparatus capable of appropriately monitoring the generation status of neutron rays at low cost.

[0008] An ion implantation apparatus according to one embodiment of the present invention comprises: a plurality of apparatuses arranged along a beam line for transmitting an ion beam; a plurality of neutron beam detectors arranged at a plurality of positions near the beam line for measuring neutron beams that may be generated at a plurality of locations on the beam line due to collisions of high-energy ion beams; and a control apparatus for monitoring at least one of the plurality of apparatuses based on a measurement value of at least one of the plurality of neutron beam detectors.

[0009] Another embodiment of the present invention is an ion implantation method. The method includes: a step of measuring neutron beams that may be generated at multiple locations on the beam line due to collision of high-energy ion beams using multiple neutron beam detectors arranged at multiple locations near the beam line that transmits the ion beam; and a step of monitoring at least one of multiple devices arranged along the beam line based on the measurement value of at least one neutron beam detector among the multiple neutron beam detectors.

[0010] Furthermore, any combination of the above-described constituent elements, constituent elements of the present invention, and embodiments in which expressions such as methods, apparatuses, and systems are replaced with each other may also be additional embodiments of the present invention.

[0011] Effects of the Invention

[0012] According to the present invention, it is possible to provide an ion implantation apparatus in which the neutron dose rate outside the apparatus is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a diagram schematically showing a neutron beam scattering component provided in a housing.

[0014] Figure 2 It is a cross-sectional view schematically showing the structure of the housing portion.

[0015] Figure 3 It is a diagram schematically showing a neutron beam scattering component provided separately from a housing.

[0016] Figure 4 It is a plan view showing the basic structure of the ion implantation apparatus according to the embodiment.

[0017] Figure 5 middle, Figure 5 (a)~ Figure 5 (c) means Figure 4 A side view of the basic structure of an ion implantation apparatus.

[0018] Figure 6 It is a top view schematically showing the structure of the front door of the load port.

[0019] Figure 7 middle, Figure 7 (a) Figure 7 (b) is a top view of the front door schematically showing the open state of the load port.

[0020] Figure 8 It is a flowchart showing the flow of the ion implantation process according to the embodiment.

[0021] Fig. 9 This is a diagram schematically showing an ion implantation apparatus in the first step.

[0022] Fig.10 It is a diagram schematically showing an ion implantation apparatus in the second step.

[0023] Fig.11 It is a diagram schematically showing an ion implantation apparatus in the third step.

[0024] Fig.12 It is a diagram schematically showing an ion implantation apparatus in the fourth step.

[0025] Fig.13 It is a diagram schematically showing an ion implantation apparatus in the fifth step.

[0026] Fig.14 It is a diagram schematically showing an ion implantation apparatus in the sixth step.

[0027] In the figure: 10-ion source, 12-beam generating unit, 14-beam accelerating unit, 16-beam deflecting unit, 18-beam transmission unit, 20-substrate conveying processing unit, 22a~22c-linear accelerating device, 23-beam distribution slit, 24-energy analysis electromagnet, 27-energy analysis slit, 28-first Faraday cup, 31-second Faraday cup, 34-beam scanner, 35-beam collector, 40-injection processing chamber, 42-beam monitor, 44-substrate conveying device, 45-wafer container, 46-loading port, 47-wafer container conveying port, 58-device body, 60-frame, 61-side wall, 62-ceiling, 63-bottom plate, 80-door structure, 81-entrance and exit, 82, 83-sliding door, 84-hinged door, 100-ion implantation device. DETAILED DESCRIPTION

[0028] Hereinafter, with reference to the accompanying drawings, the mode for implementing the present invention will be described in detail. In addition, in the accompanying drawings, the same elements are marked with the same symbols, and repeated descriptions are appropriately omitted. Furthermore, the structures described below are examples and do not limit the scope of the present invention in any way.

[0029] This embodiment relates to a high-energy ion implantation apparatus that accelerates an ion beam generated by an ion source, transmits the accelerated high-energy ion beam to a workpiece (eg, a substrate or a wafer W) along a beam line, and implants ions into the workpiece.

[0030] "High energy" in this embodiment refers to an ion beam with an energy of 4 MeV or more, 5 MeV or more, or 10 MeV or more. According to high-energy ion implantation, the desired impurity ions are implanted into the wafer surface with higher energy than the conventional ion implantation with an energy of less than 4 MeV, so that the desired impurities can be implanted into a deeper area (for example, a depth of 5 μm or more) of the wafer surface. The purpose of high-energy ion implantation is, for example, to form a P-type region and / or an N-type region in the manufacture of the latest semiconductor devices such as image sensors.

[0031] In a high-energy ion implantation device, neutron rays may be generated by the collision of a high-energy ion beam with a component of a beam line. According to the findings of the present inventors, neutron rays are generated when a boron ion beam having an energy of 4 MeV or more is used. Specifically, regarding boron as a non-radioactive nuclide, 11 B, the nuclear reactions represented by the following (1) and (2) may occur.

[0032] 11 B+ 11 B→ 21 Ne+n……(1)

[0033] 11 B+ 12 C→ 22 Ne+n……(2)

[0034] The above (1) is boron 11 B collide with each other and produce a nuclear reaction of neutrons n (also called BB reaction). First, if boron 11 When the ion beam of B impinges (collides) on the components of the beam line, the boron 11 B is stored inside its components. Then, if high-energy boron 11 The ion beam of B and the boron stored in the components 11 B collides with each other, the BB reaction represented by (1) above occurs, and neutron rays are generated.

[0035] The above (2) is boron 11 B and Carbon 12 C collides with the neutrons to produce a nuclear reaction (also called a BC reaction). At least part of the components of the beamline are made of graphite (i.e., carbon), so high-energy boron 11The ion beam of boron ions collides with graphite, causing the BC reaction shown in (2) above to generate neutron rays. 11 B is stored inside the graphite, and may also generate neutron rays produced by the BB reaction described above (1).

[0036] Thus, in a high-energy ion implantation apparatus, even if the implanted ions do not contain radioactive nuclides, radioactive nuclides may be generated by collision of the high-energy ion beam with various parts of the beam line, thereby generating neutron rays. Therefore, the high-energy ion implantation apparatus has a neutron ray generation source that may generate neutron rays due to the collision of the high-energy ion beam. Therefore, in the high-energy ion implantation apparatus, it is necessary to appropriately manage the neutron rays generated in the neutron ray generation source.

[0037] Generally, when operating a device that generates radiation such as neutron rays, a method of setting up a dedicated radiation management area and setting up an ion implantation device in the area can be considered. However, it is not easy to set up a radiation management area in a semiconductor manufacturing plant for mass production. In a semiconductor manufacturing plant, it is necessary to transfer wafer containers and the like between the ion implantation device and other devices at any time. When the ion implantation device is set in the radiation management area, the wafer containers and the like are moved in and out between the ion implantation device and the management area. In order to properly shield the neutron rays, for example, a concrete wall with a thickness of more than tens of cm is required, and the shielding door used to move the wafer container in and out also becomes very thick. As a result, it is necessary to open or close the thick shielding door at any time to move the wafer container in and out, which requires a lot of physical strength. In addition, if the operation of the ion implantation device must be stopped when the shielding door is opened or closed, the production efficiency of the semiconductor equipment will be reduced. Therefore, the inventors and others considered: by installing a neutron ray scattering component on the outer periphery of the frame surrounding the main body of the device constituting the beam line, the neutron dose rate outside the frame is less than the reference value determined in the law.

[0038] In addition, as radiation generated in the high-energy ion implantation device, in addition to the above-mentioned neutron rays, X-rays can also be cited. Lead plates and the like are installed on the frame as shielding components for X-rays. Compared with neutron rays, X-rays are easier to shield. For example, by using lead plates with a thickness of about 1mm to 5mm, X-rays directed to the outside of the frame can be fully shielded. However, it is not easy to reduce the neutron dose rate. For example, when using general high-density polyethylene (specific gravity of 0.95g / cm 3 In the case of about 1 / 10, a thickness of about 150 mm to 200 mm is required to attenuate the neutron dose rate to 1 / 10.

[0039] In order to reduce the neutron dose rate, it may be desirable to surround the entire device with a thick neutron beam scattering component. However, in a high-energy ion implantation device, the accelerator for accelerating the ion beam to a high energy becomes large, so the area occupied by the device body becomes, for example, 10m×20m or more, and the height of the device body also exceeds 2m. Therefore, if a thick neutron beam scattering component is installed on the entire device, a large number of neutron beam scattering components are required, which leads to a significant increase in cost and product weight, and is therefore not preferred.

[0040] In this embodiment, the purpose is not to completely shield neutron rays, but to arrange neutron scattering components mainly at locations outside the housing where the neutron dose rate may exceed a predetermined reference value determined in laws and regulations. Specifically, the arrangement of the neutron scattering components is changed according to the distance from the neutron ray generation source to the housing. This is because the neutron dose rate is inversely proportional to the square of the distance from the neutron ray generation source, and the neutron dose rate increases at locations where the distance from the neutron ray generation source to the housing is close, but decreases at locations where the distance from the neutron ray generation source to the housing is far.

[0041] In addition, the neutron dose rate generated in the neutron beam generation source in the present embodiment is not very large, for example, the neutron dose rate at a distance of about 1m from the neutron beam generation source is about 0.1 to 2μSv / h. Therefore, by mainly arranging the neutron beam scattering components at the position where the neutron dose rate is relatively high, it is possible to suppress the neutron dose rate outside the frame to a reference value or less determined in laws and regulations.

[0042] The "neutron beam scattering component" in this embodiment refers to a material that has a large scattering effect on neutron beams. As elements with a large scattering effect on neutron beams, hydrogen (H) and boron (B) are known, and materials with high hydrogen and boron content are preferably used as neutron beam scattering components. For example, as materials with high hydrogen density, polyolefins such as polyethylene and paraffin can be cited, and the preferred hydrogen atom content is 0.08 to 0.15 g / cm 3 As a specific example, a material having a specific gravity of 0.94 to 0.97 g / cm 3 As the neutron beam scattering member, a member obtained by adding about 10 to 40 wt % of a boron compound such as boron oxide (B2O3) to high-density polyethylene can be used.

[0043] Figure 1Schematically showing neutron beam scattering components 76a and 76b provided in a frame 70. The frame 70 is arranged to surround the outer periphery of a device 78 constituting a beam line and to separate an external space E from an internal space F. A neutron beam generating source 79 exists inside the device 78. The frame 70 has an outer surface 70a exposed to the external space E and an inner surface 70b exposed to the internal space F. The neutron beam scattering components 76a and 76b are provided inside the frame 70, that is, between the outer surface 70a and the inner surface 70b of the frame 70.

[0044] The frame 70 includes a housing portion 71 (also referred to simply as a housing portion) in which neutron beam scattering components 76a and 76b are provided, and a non-housing portion 72 in which no neutron beam scattering components are provided. The housing portion 71 includes a first housing portion 71a in which a first neutron beam scattering component 76a having a relatively large thickness ta is provided, and a second housing portion 71b in which a second neutron beam scattering component 76b having a relatively small thickness tb is provided.

[0045] The first neutron beam scattering member 76a is arranged in a first direction (arrow Da) in which the distance from the neutron beam generation source 79 to the outer surface 70a of the housing 70 is a first distance, and is arranged at a position where the neutron beam emitted from the neutron beam generation source 79 in the first direction may enter. The second neutron beam scattering member 76b is arranged in a second direction (arrow Db) in which the distance from the neutron beam generation source 79 to the outer surface 70a of the housing 70 is a second distance greater than the first distance, and is arranged at a position where the neutron beam emitted from the neutron beam generation source 79 in the second direction may enter. The thickness ta of the first neutron beam scattering member 76a is, for example, not less than 100 mm and is about 200 mm to 500 mm. On the other hand, the thickness tb of the second neutron beam scattering member 76b is, for example, not less than 50 mm and is about 100 mm to 200 mm. The first distance (Da) is, for example, less than 2 m, less than 1.5 m, or less than 1 m, and the second distance (Db) is, for example, less than 10 m or less than 5 m, and is greater than 2 m, greater than 1.5 m, or greater than 1 m.

[0046] In the third direction (arrow Dc) where the distance from the neutron beam generation source 79 to the outer surface 70a of the frame 70 becomes a third distance greater than the first distance and the second distance, no neutron beam scattering component is arranged. The third distance (Dc) is, for example, 5 m or more, 10 m or more, or 15 m or more. Therefore, in the present embodiment, the neutron beam scattering component is arranged in the direction where the distance from the neutron beam generation source 79 to the outer surface 70a of the frame 70 becomes less than a predetermined value (for example, the second distance), and the neutron beam scattering component is not arranged in the direction where the distance from the neutron beam generation source 79 to the outer surface 70a of the frame 70 exceeds another predetermined value (for example, the third distance).

[0047] It can also be said that the first neutron beam scattering member 76a is arranged at a position where the angle difference θa between the thickness direction of the scattering member and the first direction (arrow Da) from the neutron beam generation source 79 toward the outer surface 70a of the frame 70 is small. On the other hand, it can also be said that the second neutron beam scattering member 76b is arranged at a position where the angle difference θb between the thickness direction of the scattering member and the second direction (arrow Db) from the neutron beam generation source 79 toward the outer surface 70a of the frame 70 is large. The neutron beam from the neutron beam generation source 79 toward the first neutron beam scattering member 76a may enter the first neutron beam scattering member 76a approximately perpendicularly, so the effective thickness (ta / cos(θa)) through which the neutron beam passes is approximately equal to the actual thickness ta of the scattering member. On the other hand, the neutron beam from the neutron beam generation source 79 toward the second neutron beam scattering member 76b may enter obliquely with respect to the second neutron beam scattering member 76b, so the effective thickness (tb / cos(θba)) through which the neutron beam passes is greater than the actual thickness tb of the scattering member. Therefore, even when the second neutron beam scattering member 76 b having a relatively small thickness tb is used, the neutron dose rate in the external space E of the housing 70 can be effectively reduced.

[0048] Figure 1 In the example of , the first housing portion 71a and the second housing portion 71b are arranged adjacent to each other, and the first housing portion 71a and the second housing portion 71b are arranged to overlap at least partially in the thickness direction or in the direction from the neutron beam generation source 79 toward the outer surface 70a. In addition, the first neutron beam scattering component 76a provided in the first housing portion 71a and the second neutron beam scattering component 76b provided in the second housing portion 71b are arranged to overlap at least partially in the thickness direction or in the direction from the neutron beam generation source 79 toward the outer surface 70a. Thus, it is possible to prevent neutron beams with a high dose rate from leaking to the external space E through the gap between the first housing portion 71a and the second housing portion 71b.

[0049] Figure 1 In the example of , the thickness of the neutron beam scattering components 76a and 76b is changed in two stages, but the thickness of the neutron beam scattering components may be changed in three or more stages, or the thickness of the neutron beam scattering components may be changed continuously. Furthermore, in the first accommodating portion 71a and the second accommodating portion 71b, a plate-shaped or block-shaped neutron beam scattering component having a desired thickness ta and tb may be used, or a plurality of plate-shaped or block-shaped neutron beam scattering components thinner than the desired thickness ta and tb may be stacked in the thickness direction and used.

[0050] Figure 27 is a diagram showing the structure of the container 71 in detail. The container 71 has a main frame 73 and a cover plate 74. An X-ray shielding member 75 and a neutron ray scattering member 76 are provided inside the container 71. The main frame 73 is a support structure for supporting the X-ray shielding member 75 and the neutron ray scattering member 76, and constitutes the outer surface 70a and the side surface 70c of the container 71. The cover plate 74 is mounted on the opening of the main frame 73, and constitutes the inner surface 70b of the container 71. The main frame 73 and the cover plate 74 are made of a metal material such as iron or aluminum. The X-ray shielding member 75 and the neutron ray scattering member 76 are arranged to overlap in the thickness direction, for example, the X-ray shielding member 75 is on the outer surface 70a side, and the neutron ray scattering member 76 is on the inner surface 70b side. The X-ray shielding member 75 is, for example, a lead plate, and the neutron ray scattering member 76 is, for example, a plate-shaped or block-shaped high-density polyethylene. In addition, a non-combustible sheet may be installed on the surface of the inner surface 70b side of the neutron beam scattering member 76 instead of providing the cover plate 74. In addition, a non-combustible sheet may be additionally installed between the cover plate 74 and the neutron beam scattering member 76. The non-combustible sheet is a sheet-like member that does not burn for a certain period of time (for example, 20 minutes) when heated, and examples thereof include a polyvinyl chloride (PVC) resin sheet, a resin sheet using glass fiber as a base material, or a metal sheet.

[0051] The non-containment portion 72 can be configured in the same manner as the containment portion 71 except that the neutron beam scattering member 76 is not provided therein. The non-containment portion 72 has, for example, Figure 2 The main frame 73 and the cover plate 74 shown in the figure have an X-ray shielding member 75 disposed inside the non-accommodating portion 72. The thickness of the non-accommodating portion 72 may be the same as that of the accommodating portion 71, or may be smaller than that of the accommodating portion 71. The inside of the non-accommodating portion 72 may be a cavity.

[0052] Figure 3 The figure schematically shows neutron beam scattering components 77a and 77b provided separately from the frame 70, and the neutron beam scattering components 77a and 77b are installed in the device 78 or the supporting structure of the device 78 having a neutron beam generating source 79. Since the neutron beam scattering components are not provided in the frame 70, the frame 70 is configured as the above-mentioned non-accommodating portion 72. A non-combustible sheet may be installed on the surface of the neutron beam scattering components 77a and 77b.

[0053] exist Figure 3In the embodiment, the neutron beam scattering members 77a and 77b are also arranged according to the distance from the neutron beam generation source 79 to the outer surface 70a of the housing 70. The first neutron beam scattering member 77a having a large thickness ta is arranged in the first direction (arrow Da) where the distance from the neutron beam generation source 79 to the outer surface 70a of the housing 70 becomes the first distance, and is arranged at a position where the neutron beam emitted from the neutron beam generation source 79 in the first direction may enter. The second neutron beam scattering member 77b having a small thickness tb is arranged in the second direction (arrow Db) where the distance from the neutron beam generation source 79 to the outer surface 70a of the housing 70 becomes the second distance greater than the first distance, and is arranged at a position where the neutron beam emitted from the neutron beam generation source 79 in the second direction may enter. On the other hand, no neutron beam scattering component is arranged in the third direction (arrow Dc) where the distance from the neutron beam generating source 79 to the outer surface 70a of the housing 70 is a third distance greater than the first distance and the second distance. By arranging the neutron beam scattering components 77a and 77b in this way, it is expected that Figure 1 The same neutron dose rate reduction effect of the structure.

[0054] Figure 3 In the embodiment, the neutron ray scattering components 77a and 77b are arranged closer to the neutron ray generating source 79, so the amount of the neutron ray scattering components required can be less than that of the neutron ray scattering components. Figure 1 The neutron beam scattering components 76a and 76b are few. Figure 1 Compared to Figure 3 However, there are various devices and cables around the device 78 constituting the beam line, and it is not necessarily easy to arrange the neutron beam scattering components without gaps near the device 78. Therefore, in this embodiment, Figure 1 As shown in FIG. 1 , the neutron beam scattering components 76a and 76b installed in the frame are used as the basis, and as shown in FIG. Figure 3 As shown, neutron beam scattering members 77a and 77b are appropriately arranged near the device body. This reduces the total amount of neutron beam scattering members in the entire device, and the neutron dose rate in the external space E of the housing becomes equal to or less than a reference value.

[0055] Figure 4 It is a plan view schematically showing the ion implantation apparatus 100 according to the embodiment. Figure 5 (a)~ Figure 5 (c) means Figure 4 A side view of the basic structure of an ion implantation apparatus. Figure 5 (a) with Figure 4 The AA line section corresponds to Figure 5 (b) with Figure 4 The BB line section corresponds to Figure 5 (c) with Figure 4 Corresponding to the CC line section.

[0056] The ion implantation apparatus 100 includes an apparatus body 58 and a housing 60. The apparatus body 58 includes a beam generating unit 12, a beam accelerating unit 14, a beam deflecting unit 16, a beam transmitting unit 18, and a substrate conveying and processing unit 20. The housing 60 is disposed on the periphery of the apparatus body 58 and at least partially surrounds the apparatus body 58. The details will be described later, but a neutron beam scattering component is disposed in a hatched portion in the drawing.

[0057] The beam generating unit 12 has an ion source 10 and a mass spectrometer 11. In the beam generating unit 12, an ion beam is extracted from the ion source 10, and the extracted ion beam is subjected to mass spectrometry by the mass spectrometer 11. The mass spectrometer 11 has a mass spectrometer magnet 11a and a mass spectrometer slit 11b. The mass spectrometer slit 11b is arranged on the downstream side of the mass spectrometer magnet 11a. With respect to the result of mass spectrometry analysis based on the mass spectrometer 11, only the ion species required for injection are selected, and the ion beam of the selected ion species is guided to the next beam accelerating unit 14.

[0058] The beam acceleration unit 14 has a plurality of linear accelerators 22a, 22b, 22c and a beam distribution slit 23 for accelerating an ion beam, and constitutes a portion extending in a straight line in the beam line BL. Each of the plurality of linear accelerators 22a to 22c has one or more high-frequency resonators, and applies a high-frequency (RF) electric field to the ion beam to accelerate it. The beam distribution slit 23 is provided at the most downstream of the beam acceleration unit 14, and is used to measure the beam distribution of the high-energy ion beam accelerated by the plurality of linear accelerators 22a to 22c.

[0059] In the present embodiment, three linear accelerators 22a to 22c are provided. The first linear accelerator 22a is provided at the upper stage of the beam acceleration unit 14, and is provided with a plurality of high-frequency resonators (e.g., 5 to 10 stages). The first linear accelerator 22a performs "bunching" to adjust the continuous beam (DC beam) output from the beam generation unit 12 to a specific acceleration phase, for example, to accelerate the ion beam to an energy of about 1 MeV. The second linear accelerator 22b is provided at the middle stage of the beam acceleration unit 14, and is provided with a plurality of high-frequency resonators (e.g., 5 to 10 stages). The second linear accelerator 22b accelerates the ion beam output from the first linear accelerator 22a to an energy of about 2 to 3 MeV. The third linear accelerator 22c is provided at the lower stage of the beam acceleration unit 14, and is provided with a plurality of high-frequency resonators (e.g., 5 to 10 stages). The third linear accelerator 22c accelerates the ion beam output from the second linear accelerator 22b to a high energy of more than 4 MeV.

[0060] In this embodiment, the 15- to 30-stage high-frequency resonators included in the beam acceleration unit 14 are divided into three linear accelerators 22a to 22c and installed, but the structure of the beam acceleration unit 14 is not limited to the illustrated structure. The beam acceleration unit 14 can be constructed as a linear accelerator as a whole, or it can be divided into two linear accelerators or four or more linear accelerators and installed. In addition, the beam acceleration unit 14 can be composed of any other form of accelerator, for example, it can be equipped with a series accelerator. This embodiment is not limited to a specific ion acceleration method, and any beam accelerator can be used as long as it can generate an ultra-high energy ion beam of more than 4MeV.

[0061] The high energy ion beam output from the beam acceleration unit 14 has a certain range of energy distribution. Therefore, in order to reciprocate and parallelize the high energy ion beam downstream of the beam acceleration unit 14 and irradiate the wafer, it is necessary to perform high-precision energy analysis, trajectory correction, and beam convergence and divergence adjustment in advance.

[0062] The beam deflection unit 16 performs energy analysis, energy dispersion control, and trajectory correction of the high energy ion beam output from the beam acceleration unit 14. The beam deflection unit 16 constitutes a portion extending in an arc shape in the beam line BL. The high energy ion beam changes direction through the beam deflection unit 16 and heads toward the beam transmission unit 18.

[0063] The beam deflection unit 16 includes an energy analysis electromagnet 24, a transverse convergence quadrupole lens 26 for suppressing energy dispersion, an energy analysis slit 27, a first Faraday cup 28, a deflection electromagnet 30 for providing steering (orbit correction), and a second Faraday cup 31. The energy analysis electromagnet 24 is also called an energy filter electromagnet (EFM). In addition, the device group consisting of the energy analysis electromagnet 24, the transverse convergence quadrupole lens 26, the energy analysis slit 27, and the first Faraday cup 28 is also collectively referred to as an "energy analysis device".

[0064] In order to adjust the resolution of energy analysis, the energy analysis slit 27 is configured to have a variable slit width. The energy analysis slit 27 is, for example, composed of two shields that can move in the slit width direction, and is configured to be able to adjust the slit width by changing the interval between the two shields. The energy analysis slit 27 can be configured to make the slit width variable by selecting any one of a plurality of slits with different slit widths.

[0065] The first Faraday cup 28 is arranged just after the energy analysis slit 27 and is used for measuring the beam current for energy analysis. The second Faraday cup 31 is arranged just after the deflection electromagnet 30 and is provided for measuring the beam current of the ion beam that has been corrected for its trajectory and enters the beam transmission unit 18. Each of the first Faraday cup 28 and the second Faraday cup 31 is configured to be able to be taken in and out of the beam line BL by the operation of a Faraday cup driving unit (not shown).

[0066] The beam transmission unit 18 constitutes a portion extending in a straight line in the beam line BL, and is parallel to the beam acceleration unit 14 sandwiching the maintenance area MA in the center of the device. The length of the beam transmission unit 18 is designed to be the same as the length of the beam acceleration unit 14. As a result, the beam line BL composed of the beam acceleration unit 14, the beam deflection unit 16, and the beam transmission unit 18 forms a U-shaped layout as a whole.

[0067] The beam transmission unit 18 includes a beam shaper 32 , a beam scanner 34 , a beam dump 35 , a beam parallelizer 36 , a final energy filter 38 , and left and right Faraday cups 39L and 39R.

[0068] The beam shaper 32 includes a convergence / divergence lens such as a quadrupole convergence / divergence device (Q lens), and is configured to shape the ion beam that has passed through the beam deflection unit 16 into a desired cross-sectional shape. The beam shaper 32 is, for example, composed of an electric field type three-stage quadrupole lens (also called a triple Q lens), and has three quadrupole lenses. The beam shaper 32 can independently adjust the convergence or divergence of the ion beam in the horizontal direction (x direction) and the vertical direction (y direction) by using three lens devices. The beam shaper 32 may include a magnetic field type lens device, or may include a lens device that shapes the beam using both an electric field and a magnetic field.

[0069] The beam scanner 34 is configured to provide reciprocating scanning of the beam and is a beam deflection device that scans the shaped ion beam in the x direction. The beam scanner 34 has a scanning electrode pair that is opposite to the beam scanning direction (x direction). The scanning electrode pair is connected to a variable voltage power supply (not shown), and the ion beam is deflected at various angles by changing the electric field generated between the electrodes by periodically changing the voltage applied between the scanning electrode pair. As a result, the ion beam is scanned within the scanning range indicated by the arrow X. Figure 4 In FIG. 1 , multiple trajectories of the ion beam within the scanning range are represented by thin solid lines.

[0070] The beam scanner 34 deflects the ion beam beyond the scanning range indicated by the arrow X to cause the ion beam to enter the beam dump 35 provided at a position separated from the beam line BL. The beam scanner 34 cuts off the ion beam by temporarily withdrawing the ion beam from the beam line BL toward the beam dump 35 to prevent the ion beam from reaching the downstream substrate transport processing unit 20.

[0071] The beam collimator 36 is configured so that the traveling direction of the scanned ion beam is parallel to the trajectory of the designed beam line BL. The beam collimator 36 has a plurality of arc-shaped collimating lens electrodes with slits through which the ion beam passes, which are arranged in the center. The collimating lens electrodes are connected to a high-voltage power supply (not shown), and the electric field generated by applying a voltage acts on the ion beam to align the traveling direction of the ion beam in parallel. In addition, the beam collimator 36 can be replaced by other beam collimating devices, and the beam collimating device can be configured as a magnet device using a magnetic field.

[0072] The final energy filter 38 is configured to analyze the energy of the ion beam and deflect ions of required energy downward (-y direction) to guide them to the substrate transport processing unit 20. The final energy filter 38 is sometimes also called an angle energy filter (AEF) and has an AEF electrode pair for electric field deflection. The AEF electrode pair is connected to a high voltage power supply (not shown). Figure 5 In (c), the ion beam is deflected downward by applying a positive voltage to the upper AEF electrode and a negative voltage to the lower AEF electrode. In addition, the final energy filter 38 can be composed of a magnetic field deflection magnet device or a combination of an AEF electrode pair for electric field deflection and a magnet device.

[0073] The left and right Faraday cups 39L and 39R are disposed on the downstream side of the final energy filter 38 and are arranged at positions where the beam may enter the left and right ends of the scanning range indicated by the arrow X. The left and right Faraday cups 39L and 39R are disposed at positions where they do not block the beam toward the wafer W and measure the beam current when ions are implanted into the wafer W.

[0074] A substrate transfer processing unit 20 is provided at the downstream side of the beam transmission unit 18, that is, at the most downstream of the beam line BL. The substrate transfer processing unit 20 includes an implantation processing chamber 40, a beam monitor 42, a substrate transfer device 44, and a loading port 46. A platen driving device (not shown) is provided in the implantation processing chamber 40, and the platen driving device holds the wafer W during ion implantation and moves the wafer W in a direction (y direction) perpendicular to the beam scanning direction (x direction).

[0075] The beam monitor 42 is disposed at the most downstream of the beam line BL inside the implantation processing chamber 40. The beam monitor 42 is configured to be disposed at a position where the ion beam may be injected when there is no wafer W on the beam line BL, and to measure the beam current before or between ion implantation processes. The beam monitor 42 is, for example, located near a transfer port 43 connecting the implantation processing chamber 40 and the substrate transfer device 44, and is disposed at a position vertically below the transfer port 43.

[0076] The substrate transfer device 44 is configured to transfer the wafer W between the loading port 46 on which the wafer container 45 is placed and the implantation processing chamber 40. The loading port 46 is configured to be able to simultaneously place a plurality of wafer containers 45, and has, for example, four loading tables arranged in the x direction. A wafer container transfer port 47 is provided vertically above the loading port 46, and the wafer container 45 is configured to be able to pass through in the vertical direction as indicated by the arrow Y. The wafer container 45 is automatically transferred to the loading port 46 through the wafer container transfer port 47 by a transfer robot provided on the ceiling of the semiconductor manufacturing plant where the ion implantation apparatus 100 is provided, and is automatically transferred out from the loading port 46.

[0077] The ion implantation apparatus 100 further includes a central control device 50. The central control device 50 controls all operations of the ion implantation apparatus 100. The central control device 50 is implemented by components or mechanical devices such as a CPU and a memory of a computer in terms of hardware, and is implemented by computer programs and the like in terms of software. Various functions provided by the central control device 50 can be realized by the cooperation of hardware and software.

[0078] An operation panel 49 having a display device and an input device for setting the operation mode of the ion implantation apparatus 100 is provided near the central control device 50. The positions of the central control device 50 and the operation panel 49 are not particularly limited, but for example, the central control device 50 and the operation panel 49 can be arranged adjacent to the entrance 48 of the maintenance area MA between the beam generation unit 12 and the substrate transfer processing unit 20. By arranging the positions of the ion source 10, the loading port 46, the central control device 50, and the operation panel 49, which have a high operation frequency based on the operation of the operator who manages the ion implantation apparatus 100, adjacent to each other, the operation efficiency can be improved.

[0079] The ion implantation device 100 has a neutron beam generating source that may generate neutron beams due to the collision of high-energy ion beams of 4 MeV or more. The part that may become the neutron beam generating source is a component into which high-energy ion beams can be continuously injected, and is a slit, a beam monitor, a beam collector, etc. Specifically, as a slit that may become a neutron beam generating source, a beam distribution slit 23, an energy analysis slit 27, etc. can be cited. In addition, as a beam monitor that may become a neutron beam generating source, a first Faraday cup 28, a second Faraday cup 31, left and right Faraday cups 39L, 39R, a beam monitor 42, etc. can be cited. In addition, the beam collector 35 arranged downstream of the beam scanner 34 may also become a neutron beam generating source. Figure 4 and Figure 5 (a)~ Figure 5 In (c), the components of the beam line that may serve as a neutron beam generation source are painted in black.

[0080] The ion implantation apparatus 100 is provided with a plurality of neutron beam measuring devices 51, 52, 53, and 54 for measuring neutron beams that may be generated in the apparatus. The dose rate of neutron beams that may be generated in the ion implantation apparatus 100 is not very large and may be close to the detection limit of a general neutron beam measuring device. Therefore, in order to improve the measurement accuracy, the neutron beam measuring device is arranged near the neutron beam generation source. The first neutron beam measuring device 51 is arranged near the beam distribution slit 23, and the second neutron beam measuring device 52 is arranged near the energy analysis slit 27 and the first Faraday cup 28. The third neutron beam measuring device 53 is arranged near the final energy filter 38 located between the beam dump 35 and the left and right Faraday cups 39L and 39R, and the fourth neutron beam measuring device 54 is arranged near the beam monitor 42.

[0081] In addition, the arrangement of the neutron beam measuring device is only an example, and the neutron beam measuring device may be arranged at a location less than or more than the location shown in the figure. For example, an additional or alternative neutron beam measuring device may be arranged near the second Faraday cup 31 or the beam dump 35. In addition, a plurality of neutron beam measuring devices may be arranged at the same location, for example, Figure 4 Each of the neutron beam measuring devices 51 to 54 arranged at the four locations may include a plurality of (eg, two or three) neutron beam measuring devices.

[0082] The frame 60 scatters the neutron rays generated in the device body 58 and makes the neutron dose rate in the external space E outside the frame 60 become less than a predetermined reference value. Figure 5 (a)~ Figure 5As shown in (c), the frame 60 includes: a side wall portion 61, which is arranged on the side of the device body 58; a ceiling portion 62, which is arranged vertically above the device body 58; and a bottom plate portion 63, which is arranged vertically below the device body. The frame 60 surrounds the substantially rectangular internal space F occupied by the device body 58.

[0083] Neutron beam scattering components are installed at least partially in the side wall portion 61, the ceiling portion 62, and the bottom plate portion 63. On the other hand, the neutron beam scattering components are not installed in a part of the frame 60 arranged along a part of the beam line, that is, a part of the side wall portion 61, the ceiling portion 62, and the bottom plate portion 63. In the drawings, the neutron beam scattering components are installed in the hatched parts, and the neutron beam scattering components are not installed in the unhatched parts.

[0084] At least a portion of each of the side wall 61, ceiling 62 and bottom plate 63 can be configured similarly to the above-described storage portion 71 or non-storage portion 72. In addition, a sliding door or hinged door can be provided at any position of the housing 60, and a neutron beam scattering component can be mounted on the door structure.

[0085] The side wall portion 61 has a first side wall portion 61a disposed near or around the beam generating unit 12. The beam generating unit 12 is a portion through which the low-energy ion beam passes before being accelerated to high energy, and cannot be a neutron beam generating source. Furthermore, the first side wall portion 61a is disposed at a position separated from the neutron beam generating source by more than 5m to 10m, so no neutron beam scattering component is disposed. For example, the first side wall portion 61a has the same structure as the non-accommodating portion 72 described above.

[0086] The side wall portion 61 includes a second side wall portion 61b and a third side wall portion 61c arranged along the beam acceleration unit 14. The second side wall portion 61b is arranged along the first linear accelerator 22a and the second linear accelerator 22b through which the ion beam passes before being accelerated to high energy, and therefore, no neutron beam scattering component is provided. On the other hand, the third side wall portion 61c is a portion arranged along the third linear accelerator 22c through which the high-energy ion beam passes, and is arranged near the beam distribution slit 23 that may become a neutron beam generation source, and therefore, a neutron beam scattering component is provided. The second side wall portion 61b has, for example, the same structure as the non-accommodating portion 72 described above. The third side wall portion 61c has, for example, the same structure as the accommodation portion 71 described above. The third side wall portion 61c has the same structure as the second accommodation portion 71b, and may be provided with a second neutron beam scattering component 76b having a small thickness.

[0087] The side wall portion 61 includes a fourth side wall portion 61d, a fifth side wall portion 61e, and a sixth side wall portion 61f arranged along the beam deflection unit 16. The beam deflection unit 16 includes an energy analysis slit 27, a first Faraday cup 28, and a second Faraday cup 31 that may be a neutron beam generation source, and therefore, neutron beam scattering components are provided on the side walls 61d to 61f near the beam deflection unit 16.

[0088] The 4th side wall portion 61d is arranged near the energy analysis electromagnet 24 where the beam line BL is in an arc shape, and therefore the distance from the beam line BL to the 4th side wall portion 61d is relatively large. Therefore, a neutron beam scattering component with a small thickness is provided on the 4th side wall portion 61d. Similarly, the 6th side wall portion 61f is arranged near the deflection electromagnet 30 where the beam line BL is in an arc shape, and the distance from the beam line BL to the 6th side wall portion 61f is relatively large, and therefore a neutron beam scattering component with a small thickness is provided. The 4th side wall portion 61d and the 6th side wall portion 61f have the same structure as the above-mentioned 2nd accommodating portion 71b, and can be provided with a 2nd neutron beam scattering component 76b with a small thickness.

[0089] The fifth side wall portion 61e is arranged near the transverse convergence quadrupole lens 26, the energy analysis slit 27 and the first Faraday cup 28 where the beam line BL becomes a straight line, and is parallel to the beam line BL. From the viewpoint of reducing the occupied area of ​​the frame 60, the fifth side wall portion 61e is arranged close to the beam line BL. The distance from the energy analysis slit 27 and the first Faraday cup 28, which are the neutron beam generation sources, to the fifth side wall portion 61e is small, for example, less than 2m, less than 1.5m or less than 1m. Moreover, the neutron beam from the energy analysis slit 27 and the first Faraday cup 28 toward the fifth side wall portion 61e travels in the thickness direction of the fifth side wall portion 61e, so it is difficult to obtain an effective thickness through which the neutron beam passes. Therefore, a thick neutron beam scattering component is provided on the fifth side wall portion 61e, and its thickness is, for example, more than 150mm, more than 200mm or more than 300mm. The fifth side wall portion 61 e has the same structure as the first housing portion 71 a and may be provided with a first neutron beam scattering member 76 a having a large thickness.

[0090] The side wall portion 61 has a seventh side wall portion 61g disposed along the beam transmission unit 18. The seventh side wall portion 61g is disposed near the beam shaper 32, the beam scanner 34, and the beam parallelizer 36 located on the upstream side of the beam transmission unit 18. There are the second Faraday cup 31 and the beam dump 35 that may be neutron beam generation sources near the seventh side wall portion 61g, but the distance from these neutron beam generation sources to the seventh side wall portion 61g is relatively large. Therefore, a neutron beam scattering component with a small thickness is provided on the seventh side wall portion 61g. The seventh side wall portion 61g has the same structure as the second accommodating portion 71b described above, and can be provided with a second neutron beam scattering component 76b with a small thickness.

[0091] The side wall portion 61 has an eighth side wall portion 61h disposed along the final energy filter 38, the implantation processing chamber 40, and the substrate conveyor 44. The eighth side wall portion 61h is disposed near the beam monitor 42 into which the high energy ion beam may be frequently injected, and the neutron dose rate in the beam monitor 42 is relatively high, so a thick neutron beam scattering component is provided. The eighth side wall portion 61h has the same structure as the first accommodating portion 71a, and may be provided with a thick first neutron beam scattering component 76a.

[0092] The side wall portion 61 has a 9th side wall portion 61i configured to surround the loading port 46. The 9th side wall portion 61i has a portion configured in front of the loading port 46 and a portion configured on the side of the loading port 46. The 9th side wall portion 61i is provided with an entrance and exit and a front door to the loading port 46. The 9th side wall portion 61i is arranged near the beam monitor 42, so a neutron beam scattering component is provided. The distance between the 9th side wall portion 61i and the beam monitor 42 is close, so it is preferable to provide a neutron beam scattering component with a large thickness. However, if the thickness of the front door is excessively increased, it takes physical effort to open or close the front door, resulting in a decrease in convenience. Therefore, by configuring additional neutron beam scattering components 64a and 64b between the beam monitor 42 and the loading port 46, the thickness of the neutron beam scattering component required for the 9th side wall portion 61i is reduced. The ninth side wall portion 61i has the same structure as the second housing portion 71b, and can be provided with a second neutron beam scattering member 76b having a small thickness.

[0093] In addition, the ceiling 62 and the bottom plate 63 are also provided with neutron beam scattering members from the same viewpoint as the side wall 61. That is, the neutron beam scattering members are mainly arranged near the neutron beam generation source and at a location where the distance from the neutron beam generation source to the ceiling 62 or the bottom plate 63 is short, and the neutron beam scattering members are made thinner or not provided at other locations.

[0094] Figure 5In (a), the ceiling portion 62 includes a first ceiling portion 62a in which no neutron beam scattering member is provided and a second ceiling portion 62b in which a neutron beam scattering member is provided. The first ceiling portion 62a is arranged along the upstream side of the beam generating unit 12 and the beam accelerating unit 14 (the first linear accelerator 22a and the second linear accelerator 22b). The second ceiling portion 62b is arranged along the downstream side of the beam accelerating unit 14 (the third linear accelerator 22c and the beam distribution slit 23). The distance between the second ceiling portion 62b and the beam distribution slit 23, which may be a neutron beam generation source, is close (for example, within 1 m), so the thickness of the neutron beam scattering member is changed stepwise according to the distance from the beam distribution slit 23. For example, in the second ceiling portion 62b, the closer the distance from the beam distribution slit 23 is, the greater the number of the overlapping plate-shaped neutron beam scattering members.

[0095] Figure 5 In (a), the bottom plate 63 includes a first bottom plate 63a on which no neutron beam scattering component is provided and a second bottom plate 63b on which a neutron beam scattering component is provided. The first bottom plate 63a is arranged along the upstream side of the beam generating unit 12 and the beam accelerating unit 14. The second bottom plate 63b is arranged near the beam distribution slit 23. From the viewpoint of ensuring the scaffolding during the installation and operation of the device main body 58, it is preferable that the bottom plate 63 is configured to be as flat as possible. In other words, since a thick neutron beam scattering component is locally arranged on the bottom plate 63, it is not preferable to configure the upper surface of the bottom plate 63 in a stepped shape. Therefore, additional neutron beam scattering components 64c and 64d are arranged on the lower surface of the third linear accelerator 22c and the device accommodating the beam distribution slit 23, and the thickness of the neutron beam scattering component required for the second bottom plate 63b is reduced.

[0096] Figure 5 In (b), the ceiling portion 62 has a third ceiling portion 62c provided with a neutron beam scattering member. The third ceiling portion 62c is arranged along the beam deflection unit 16. Similar to the second ceiling portion 62b, the third ceiling portion 62c is configured such that the thickness of the neutron beam scattering member increases near the energy analysis slit 27 and the first Faraday cup 28 which may be a neutron beam generation source, as the distance to the neutron beam generation source is closer.

[0097] Figure 5In (b), the bottom plate portion 63 has a third bottom plate portion 63c provided with a neutron beam scattering component. The third bottom plate portion 63c is arranged along the beam deflection unit 16. In addition, an additional neutron beam scattering component 64e is arranged on the lower surface of the device constituting the beam deflection unit 16. The additional neutron beam scattering component 64e is configured to be arranged near the energy analysis slit 27 and the first Faraday cup 28 that may become a neutron beam generation source, and the closer the distance to the neutron beam generation source, the greater the thickness of the neutron beam scattering component. By arranging the additional neutron beam scattering component 64e, the thickness of the neutron beam scattering component required for the third bottom plate portion 63c can be reduced.

[0098] Figure 5 In (c), the ceiling portion 62 includes a fourth ceiling portion 62d and a fifth ceiling portion 62e provided with neutron beam scattering components. The fourth ceiling portion 62d is arranged along the beam transmission unit 18, and the fifth ceiling portion 62e is arranged along the substrate conveying processing unit 20. The fourth ceiling portion 62d is configured such that the thickness of the neutron beam scattering component increases near the second Faraday cup 31 and the beam dump 35, which may become the neutron beam generation source. In addition, an additional neutron beam scattering component 64g is provided at a position near the beam dump 35 on the upper surface of the beam scanner 34. The fifth ceiling portion 62e is configured such that the thickness of the neutron beam scattering component increases as the distance to the beam monitor 42, which may become the neutron beam generation source, becomes closer.

[0099] Figure 5 In (c), the bottom plate 63 includes a fourth bottom plate 63d and a fifth bottom plate 63e provided with neutron beam scattering components. The fourth bottom plate 63d is arranged along the beam transmission unit 18, and the fifth bottom plate 63e is arranged along the substrate conveying processing unit 20. The fourth bottom plate 63d is configured so that the thickness of the neutron beam scattering component is uniform. An additional neutron beam scattering component 64f is arranged on the lower surface of the device body 58 near the second Faraday cup 31. By arranging the additional neutron beam scattering component 64f, the thickness of the neutron beam scattering component required for the fourth bottom plate 63d is reduced. The fifth bottom plate 63e is configured so that the thickness of the neutron beam scattering component increases near the injection processing chamber 40 where the beam monitor 42 is provided. In addition, no neutron beam scattering component is provided on the bottom plate (sixth bottom plate) 63f of the substrate conveying device 44 and the loading port 46. This is because the neutron dose rate from the beam monitor 42 toward the sixth bottom plate portion 63 f can be sufficiently reduced by the additional neutron beam scattering member 64 a disposed between the implantation processing chamber 40 and the substrate transfer device 44 .

[0100] Figure 5In (c), the additional neutron beam scattering components 64a and 64b provided in the substrate transfer processing unit 20 are arranged so as not to hinder the transfer of the wafer W between the injection processing chamber 40 and the loading port 46. Specifically, the structure is such that no neutron beam scattering components are arranged on the wafer transfer path in the horizontal direction indicated by the arrow Z at the height position where the transfer port 43 is provided. That is, the additional neutron beam scattering components 64a and 64b are arranged so as not to overlap each other in the horizontal direction. On the other hand, in order to prevent neutron beams from leaking to the outside through the wafer transfer path in the horizontal direction indicated by the arrow Z, a ninth side wall portion 61i including a neutron beam scattering component is provided on the front side of the loading port 46. The ninth side wall portion 61i is arranged so as to partially overlap with the additional neutron beam scattering components 64a and 64b in the horizontal direction.

[0101] Figure 5 In (c), the additional neutron beam scattering member 64b provided in the substrate conveying processing unit 20 is arranged so as not to hinder the conveyance of the wafer container in the vertical direction indicated by the arrow Y through the wafer container conveying port 47. That is, the additional neutron beam scattering member 64b is arranged to be separated from the ninth side wall portion 61i in the horizontal direction across the wafer container conveying port 47. On the other hand, in order to prevent the neutron beam from leaking to the outside through the wafer container conveying port 47, the additional neutron beam scattering member 64b is arranged to partially overlap with the ninth side wall portion 61i in the horizontal direction.

[0102] Figure 6 4 is a top view schematically showing the structure of the front door 80 of the load port 46. The load port 46 has four loading tables 46a to 46d arranged in a row in the left-right direction (the direction of the arrow S). Figure 4 The entrance 81 is surrounded by a part of the ninth side wall 61i, and two sliding doors 82 and 83 and a hinged door 84 are provided to close the entrance 81. Neutron beam scattering components are mounted on each of the doors 82 to 84 constituting the front door 80.

[0103] The first sliding door 82 is configured to be able to slide in the left-right direction along a first guide rail 85 extending in the left-right direction, and the second sliding door 83 is configured to be able to slide in the left-right direction along a second guide rail 86 extending in the left-right direction. The first sliding door 82 and the second sliding door 83 are arranged at different positions in the depth direction, and are arranged so that the first sliding door 82 is on the back side and the second sliding door 83 is on the front side when viewed from the front of the load port 46. The hinge door 84 is configured to be able to rotate as shown by arrow R with a hinge 87 provided at the right end of the entrance 81 as a rotation axis.

[0104] exist Figure 6In the closed state of the front door 80 shown in FIG, the first sliding door 82 is arranged in the center of the entrance 81, the second sliding door 83 is arranged on the left side of the entrance 81, and the hinged door 84 is arranged on the right side of the entrance 81. In other words, the hinged door 84 closes the right end of the entrance 81, and the two sliding doors 82 and 83 close the remaining part of the entrance 81 not closed by the hinged door 84. In the closed state, the first sliding door 82 and the second sliding door 83 are configured to partially overlap in the depth direction, and the first sliding door 82 and the hinged door 84 are also configured to partially overlap in the depth direction. The hinged door 84 is configured so that the position in the depth direction coincides with the position in the depth direction of the second sliding door 83 in the closed state.

[0105] Figure 7 (a) Figure 7 (b) is a plan view schematically showing the front door 80 in an open state. Figure 7 (a) shows a state where the left side of the entrance 81 is opened. The hinged door 84 is opened forward, and the first sliding door 82 and the second sliding door 83 are slid to the right side of the entrance 81. As a result, the front faces of the first mounting platform 46a and the second mounting platform 46b arranged on the left side are opened. Figure 7 (b) shows a state where the right side of the entrance 81 is opened. The hinged door 84 is opened forward, and the first sliding door 82 and the second sliding door 83 are slid to the left side of the entrance 81. As a result, the front sides of the third mounting platform 46c and the fourth mounting platform 46d arranged on the right side are opened.

[0106] According to the present embodiment, in the loading port 46 provided with four loading platforms 46a to 46d, three doors 82 to 84 are combined, so that the entire front of any two loading platforms on the left and right can be opened in the open state, and a surplus work space in the left and right direction can be provided. If the front door 80 is composed of only two sliding doors, the two sliding doors are arranged so as to overlap near the center of the entrance and exit 81, so that the front of the two central loading platforms 46b and 46c cannot be opened widely. In addition, in the case where the front door 80 is composed of three sliding doors, the three sliding doors need to be arranged in a direction offset from the depth direction, so that the thickness of the entire front door 80 in the depth direction increases. In the present embodiment, a neutron beam scattering component with a large thickness (for example, about 200 mm) is installed on each of the doors 82 to 84 constituting the front door 80, so the depth of the front door 80 increases when three sliding doors are used. On the other hand, according to the present embodiment, by combining two sliding doors and one hinged door, the depth of the front door 80 can be reduced and the entrance 81 can be opened widely.

[0107] Figure 6 and Figure 7 (a) Figure 7In the front door 80 shown in (b), the hinged door 84 is arranged on the right side of the entrance 81, but the hinged door 84 may be arranged on the left side of the entrance 81. That is, the front door 80 may be constructed in a bilaterally symmetrical manner with the structure shown in the figure. In addition, it may be constructed such that the first hinged door is arranged on the left side of the entrance 81, the second hinged door is arranged on the right side of the entrance 81, and a sliding door is arranged in the center of the entrance 81.

[0108] Next, the measurement of neutron rays will be described. The central control device 50 obtains Figure 4 The central control device 50 calculates the position of the neutron beam generating source of at least one location based on the measurement values ​​of the plurality of neutron beam measuring devices 51 to 54 shown in the figure, and monitors the generation status of the neutron beam. The central control device 50 estimates the position of the neutron beam generating source of at least one location based on the measurement values ​​of the plurality of neutron beam measuring devices 51 to 54, and estimates the intensity of the neutron beam emitted from the neutron beam generating source of at least one location whose position is estimated.

[0109] For example, when neutron beams are detected by the first neutron beam measuring device 51 and the second neutron beam measuring device 52, but not by the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54, it is estimated that there is a neutron beam generation source on the upstream side of the beam line BL. In this case, by analyzing the magnitude of the measurement values ​​of the first neutron beam measuring device 51 and the second neutron beam measuring device 52, it is possible to estimate which neutron beam generation source has generated the neutron beam. For example, when the measurement value of the first neutron beam measuring device 51 is large and the measurement value of the second neutron beam measuring device 52 is small, it is estimated that the beam distribution slit 23 is the neutron beam generation source. Furthermore, when the measurement value of the first neutron beam measuring device 51 is small and the measurement value of the second neutron beam measuring device 52 is large, it is estimated that at least one of the energy analysis slit 27, the first Faraday cup 28, and the second Faraday cup 31 is the neutron beam generation source. Furthermore, when the measured values ​​of the first neutron beam measuring device 51 and the measured values ​​of the second neutron beam measuring device 52 are both large, the possibility that the beam distribution slit 23, the energy analysis slit 27, the first Faraday cup 28, and the second Faraday cup 31 are all neutron beam generation sources is estimated. On the contrary, when neutron beams are not detected by the measured values ​​of the first neutron beam measuring device 51 and the measured values ​​of the second neutron beam measuring device 52, but neutron beams are detected by the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54, it is estimated that there is a neutron beam generation source on the downstream side of the beam line BL. By estimating the position of the neutron beam generation source, the intensity of the neutron beam emitted from the neutron beam generation source at the estimated position can be estimated based on the arrangement and distance of the plurality of neutron beam measuring devices 51 to 54 relative to the neutron beam generation source at the estimated position.

[0110] The central control device 50 can estimate the neutron dose rate distribution in the internal space F inside the frame 60 based on the measured values ​​of the plurality of neutron beam measuring devices 51 to 54. The central control device 50 can estimate the neutron dose rate outside the frame 60 based on the measured values ​​of the plurality of neutron beam measuring devices 51 to 54. For example, the central control device 50 estimates the position of the neutron beam generation source and the neutron dose rate, and can calculate the neutron dose rate at any position of the external space E or the internal space F of the frame 60 based on the estimated position of the neutron beam generation source and the neutron dose rate through a simulation test or the like. The neutron dose rate inside or outside the frame 60 can be calculated by considering the arrangement of the device body 58, the arrangement of the frame 60, the arrangement of the neutron beam scattering component provided in the frame 60, and the arrangement of the neutron beam scattering component provided separately from the frame 60. When the calculated neutron dose rate inside or outside the frame 60 exceeds a specified upper limit, the central control device 50 can output a warning, temporarily stop the output of the ion beam, or change the operating conditions of at least one of the multiple devices constituting the device body 58 so that the neutron dose rate is less than the upper limit.

[0111] The central control device 50 can monitor at least one of the multiple devices arranged along the beam line BL based on the measurement values ​​of the multiple neutron beam measuring devices 51 to 54. Specifically, it can detect an abnormality in at least one of the multiple devices constituting the device body 58, or it can infer the device that needs maintenance among the multiple devices. The central control device 50 can use information related to the operation mode of the device body 58 to determine whether at least one device that is the monitored object is normal or abnormal. This is because the position that becomes the neutron beam generation source and the neutron dose rate generated in the neutron beam generation source may be different depending on the operation mode of the device body 58. Below, refer to Figure 8 to Figure 14 , the operation mode that makes it possible to generate neutron rays is explained.

[0112] Figure 8 1 is a flowchart showing the flow of the ion implantation process according to the embodiment, and shows the flow of implanting ions into the wafer W after adjusting the ion beam. Figures 9 to 14 The operation mode of the apparatus main body 58 in each step, the position of the neutron beam generation source, and the neutron beams 90 to 97 detected by the plurality of neutron beam measuring devices 51 to 54 are schematically shown. Figures 9 to 14 In FIG. 1 , the reach of the ion beam passing through the beam line BL is indicated by a thick line, and the main neutron ray generating source is blackened.

[0113] First, in Figure 8 In the first step (S10), the beam energy is adjusted. Fig. 9The ion implantation apparatus 100 in the first step is schematically shown. The first step is performed in the following state (also referred to as the first operation mode): the beam distribution slit 23 is inserted into the beam line BL, the slit width of the energy analysis slit 27 is reduced, and the first Faraday cup 28 is inserted into the beam line BL. In the first step, there is a possibility that a high energy ion beam collides with the beam distribution slit 23, the energy analysis slit 27, and the first Faraday cup 28 to generate neutron rays. Therefore, in the first step, the beam distribution slit 23, the energy analysis slit 27, and the first Faraday cup 28 may become a neutron ray generation source. At this time, the neutron ray 90 generated in the beam distribution slit 23 is mainly detected by the first neutron ray measuring device 51. In addition, the neutron ray 91 generated in the energy analysis slit 27 and the first Faraday cup 28 is mainly detected by the second neutron ray measuring device 52. In addition, the neutron beam 90 generated in the beam distribution slit 23 can also be detected by the second neutron beam measuring device 52. Similarly, the neutron beam 91 generated in the energy analysis slit 27 and the first Faraday cup 28 can also be detected by the first neutron beam measuring device 51.

[0114] Then, in Figure 8 In the second step (S12), the beam current is adjusted using the first Faraday cup 28. Fig.10 The ion implantation apparatus 100 in the second step is schematically shown. The second step is performed in the following state (also referred to as the second operation mode): the beam distribution slit 23 is retracted from the beam line BL, the slit width of the energy analysis slit 27 is increased to a normal width, and the first Faraday cup 28 is inserted into the beam line BL. The second step is performed in accordance with Fig. 9 The operation mode is the same as that of the first step, but the high energy ion beam does not collide with the beam distribution slit 23, and the high energy ion beam is unlikely to collide with the energy analysis slit 27. As a result, in the second step, the high energy ion beam substantially collides only with the first Faraday cup 28, and the first Faraday cup 28 may become a neutron beam generation source. The neutron beam 92 generated in the first Faraday cup 28 can be detected by the first neutron beam measuring device 51 and the second neutron beam measuring device 52. In the second step, more high energy ion beams are injected into the first Faraday cup 28, so the dose rate of the neutron beam 92 that may be generated in the first Faraday cup 28 increases compared to the first step.

[0115] then, Figure 8 In the third step (S14), the beam current is adjusted using the second Faraday cup 31. Fig.11The ion implantation apparatus 100 in the third step is schematically shown. The third step is performed in the following state (also referred to as the third operation mode): the first Faraday cup 28 is retracted from the beam line BL, and the second Faraday cup 31 is inserted into the beam line BL. In the third step, the ion beam collides with the second Faraday cup 31, so the second Faraday cup 31 may become the main neutron beam generation source. The neutron beam 93 generated in the second Faraday cup 31 is mainly detected by the first neutron beam measuring device 51 and the second neutron beam measuring device 52. At this time, the dose rate of the neutron beam 93 detected by the second neutron beam measuring device 52 arranged near the second Faraday cup 31 is relatively large, and the dose rate of the neutron beam 93 detected by the first neutron beam measuring device 51 arranged separately from the second Faraday cup 31 is relatively small.

[0116] then, Figure 8 In the fourth step (S16), the beam monitor 42 is used to adjust the beam current. Fig.12 The ion implantation apparatus 100 in the fourth step is schematically shown. The fourth step is performed in the following non-scanning state (also referred to as the fourth operation mode): the second Faraday cup 31 is retracted from the beam line BL, and the beam scanner 34 is not used to reciprocate and scan the ion beam. In the fourth step, the ion beam collides with the beam monitor 42, so the beam monitor 42 may become the main neutron beam generation source. The neutron beam 94 generated in the beam monitor 42 is mainly detected by the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54. At this time, the dose rate of the neutron beam 94 detected by the fourth neutron beam measuring device 54 arranged near the beam monitor 42 is relatively large, and the dose rate of the neutron beam 94 detected by the third neutron beam measuring device 53 arranged separately from the beam monitor 42 is relatively small.

[0117] then, Figure 8 In the fifth step ( S18 ), the ion beam is temporarily withdrawn from the beam line BL, and the wafer W to be implanted with ions is carried into the implantation processing chamber 40 . Fig.13 The ion implantation apparatus 100 in the fifth step is schematically shown. In the fifth step, the following state (also referred to as the fifth operation mode) is achieved: the ion beam is deflected by the beam scanner 34, and the ion beam is injected into the beam collector 35. Therefore, in the fifth step, the beam collector 35 may become the main neutron beam generation source. The neutron beam 95 generated in the beam collector 35 is mainly detected by the first neutron beam measuring device 51, the second neutron beam measuring device 52, and the third neutron beam measuring device 53. At this time, the dose rate of the neutron beam 95 detected by the third neutron beam measuring device 53 arranged near the beam collector 35 is relatively large, and the dose rate of the neutron beam 95 detected by the first neutron beam measuring device 51 and the second neutron beam measuring device 52 arranged separately from the beam collector 35 is relatively small.

[0118] then, Figure 8 In the sixth step (S20), the ion beam scanned back and forth by the beam scanner 34 is irradiated onto the wafer W to perform ion implantation. Fig.14 The ion implantation apparatus 100 in the sixth step is schematically shown. In the sixth step, the ion beam is reciprocally scanned by the beam scanner 34, and the ion beam is incident on the left and right Faraday cups 39L and 39R. In addition, in the sixth step, the wafer W is reciprocated in the vertical direction so that at least a part of the ion beam that is not incident on the wafer W is incident on the beam monitor 42. Therefore, in the sixth step, the left and right Faraday cups 39L and 39R and the beam monitor 42 may become the main neutron beam generation sources. The neutron beam 96 generated in the left and right Faraday cups 39L and 39R is mainly detected by the third neutron beam measuring device 53, and the neutron beam 97 generated in the beam monitor 42 is mainly detected by the fourth neutron beam measuring device 54. In addition, in the 6th process, a part of the ion beam reaching the implantation processing chamber 40 is incident on the beam monitor 42, so compared with the 4th process, the neutron dose rate generated in the beam monitor 42 is reduced, and the dose rate of the neutron beam 97 detected by the 4th neutron beam measuring device 54 is also reduced.

[0119] In addition, in addition to the operation modes corresponding to each of the first to sixth steps, the device body 58 can adopt various operation modes according to the state of the device body 58.

[0120] In this way, if the operation mode of the device body 58 is changed, the part that may become the neutron beam generation source changes, and the neutron dose rate generated in the neutron beam generation source may also change. Therefore, the central control device 50 performs abnormality detection corresponding to the operation mode of the device body 58. The central control device 50 monitors the device based on information related to the operation mode of the device body 58 and the measured value of at least one neutron beam measuring device in a specific operation mode. For example, the reference for abnormality detection can be made different according to the operation mode, and at least one of the multiple devices can be monitored using the reference corresponding to the operation mode. In addition, when the measured value of at least one neutron beam measuring device exceeds the reference value determined corresponding to the specific operation mode, the operation condition of at least one of the multiple devices can be changed so that the measured value becomes less than the reference value. For example, the operation condition can be changed to reduce the neutron dose rate, or the beam output can be temporarily stopped so that no neutron beam is generated.

[0121] exist Fig. 9 The first action mode or Fig.10In the case of the second operation mode, there is a possibility that the first neutron beam measuring device 51 and the second neutron beam measuring device 52 detect the neutron beams 90, 91, and 92, while on the other hand, it can be said that the state in which the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 do not detect the neutron beam is normal. Therefore, in the first operation mode and the second operation mode, the upper limit values ​​of the first neutron beam measuring device 51 and the second neutron beam measuring device 52 are set high, and the upper limit values ​​of the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 are set low (for example, close to the background noise level). Therefore, if the third neutron beam measuring device 53 or the fourth neutron beam measuring device 54 detects the neutron beam, it can be detected that some abnormality has occurred in the ion implantation device 100. By using the first neutron beam measuring device 51 and the second neutron beam measuring device 52, it is possible to perform adjustment of beam energy and beam current while monitoring neutron beams generated in at least one of the beam acceleration unit 14 and the beam deflection unit 16. Thus, when the measured value of the first neutron beam measuring device 51 or the second neutron beam measuring device 52 exceeds the upper limit value, it is possible to detect that some abnormality has occurred in the adjustment process of the first operation mode or the second operation mode.

[0122] exist Fig.11 In the case of the third operation mode, the second Faraday cup 31 may become the main neutron beam generation source, so the state in which the first neutron beam measuring device 51 and the second neutron beam measuring device 52 do not detect neutron beams or detect a small amount of neutron beams can be said to be normal. For example, it can be said that the state in which the neutron dose rate detected by the first neutron beam measuring device 51 arranged separately from the second Faraday cup 31 is lower than the neutron dose rate detected by the second neutron beam measuring device 52 arranged near the second Faraday cup 31 is normal. Therefore, in the third operation mode, the first neutron beam measuring device 51 and the second neutron beam measuring device 52 can be used to monitor the neutron beam generated in the second Faraday cup 31 downstream of the energy analyzer while performing beam current adjustment.

[0123] exist Fig.12In the case of the fourth operation mode, the beam monitor 42 may become the main neutron beam generation source, so there is a possibility that the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 detect neutron beams. On the other hand, it can be said that the state in which the first neutron beam measuring device 51 and the second neutron beam measuring device 52 do not detect neutron beams is normal. Therefore, in the fourth operation mode, the upper limit values ​​of the first neutron beam measuring device 51 and the second neutron beam measuring device 52 can be set to be low (for example, close to the background interference level), and the upper limit values ​​of the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 can be set to be high. In the fourth operation mode, the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 can be used to monitor the neutron beam generated in the beam monitor 42 while adjusting the beam current.

[0124] exist Fig.13 In the case of the fifth operation mode, the beam dump 35 may become the main neutron beam generation source, so it can be said that the state in which the first neutron beam measuring device 51, the second neutron beam measuring device 52, or the third neutron beam measuring device 53 does not detect neutron beams or can detect a small amount of neutron beams is normal. For example, it can be said that the state in which the neutron dose rate detected by the first neutron beam measuring device 51 and the second neutron beam measuring device 52 arranged separately from the beam dump 35 is lower than the neutron dose rate detected by the third neutron beam measuring device 53 arranged near the beam dump 35 is normal. Therefore, in the fifth operation mode, the first neutron beam measuring device 51, the second neutron beam measuring device 52, and the third neutron beam measuring device 53 can be used to measure the neutron beam generated in the beam dump 35 while monitoring whether the beam is appropriately evacuated. In the fifth operation mode, when a neutron beam is detected by the fourth neutron beam measuring device 54, it is considered that some abnormality has occurred during beam retreat, and the wafer loading and unloading is stopped.

[0125] exist Fig.14In the case of the sixth operation mode, the left and right Faraday cups 39L, 39R and the beam monitor 42 may become the main neutron beam generation sources, so as in the fourth operation mode, the third neutron beam measuring device 53 and the fourth neutron beam measuring device 54 can be used to measure the neutron beam and monitor whether the ion implantation process is properly performed. Even when neutron beams are not generated in the left and right Faraday cups 39L, 39R and the beam monitor 42, an abnormality occurs in the final energy filter 38. When the high energy ion beam collides with the AEF electrode pair, there is a possibility that the final energy filter 38 becomes a neutron beam generation source. When neutron beams are generated in the final energy filter 38 due to the occurrence of an abnormality, it is assumed that the neutron dose rate detected by the third neutron beam measuring device 53 increases. Therefore, when only the neutron dose rate measured by the third neutron beam measuring device 53 exceeds the upper limit value determined for the sixth operation mode, it can be considered that an abnormality has occurred in the final energy filter 38 and the ion implantation process is stopped.

[0126] The central control device 50 can store the measured values ​​of the plurality of neutron beam measuring devices 51 to 54, and analyze the relationship between the measured values ​​of each measuring device in the plurality of operation modes and the transition of time changes. For example, the operation mode of the device body 58 and the correlation data of the measured values ​​of the plurality of neutron beam measuring devices 51 to 54 in a specific operation mode can be stored, and the state of each device constituting the device body 58 can be estimated based on the stored correlation data. As the state of each device, for example, it can be estimated whether it is currently in a state requiring maintenance, and it can also be estimated when maintenance will be required in the future. As the amount of boron stored in the neutron beam generation source increases due to the long-term use of the device, the neutron dose rate that may be generated in the neutron beam generation source may increase, so it is possible to estimate whether maintenance is required and the time of maintenance by analyzing the increase trend of the neutron dose rate measured by the measuring device.

[0127] The central control device 50 can detect an abnormality of at least one measuring device itself based on the operation mode of the device body 58 and the measurement values ​​of the multiple neutron beam measuring devices 51 to 54 in a specific operation mode. Generally, in order to detect an abnormality of the neutron beam measuring device itself, it is necessary to configure multiple neutron beam measuring devices at the same position and measure neutron beams under the same conditions. However, since there are multiple neutron beam generating sources as in the present embodiment, when it is necessary to measure neutron beams at multiple locations, if multiple neutron beam measuring devices are configured at each of the multiple locations, it will lead to a significant increase in cost. Therefore, in the present embodiment, it is possible to detect an abnormality of at least one neutron beam measuring device itself based on the measurement values ​​of the multiple neutron beam measuring devices 51 to 54 configured at different locations.

[0128] In each of the above-mentioned operation modes, the position that may become the main neutron beam generation source is determined for each operation mode, and the distance from the neutron beam generation source to each neutron beam measuring device 51 to 54 is also fixed, so the ratio of the measurement values ​​of each neutron beam measuring device 51 to 54 in a specific operation mode is almost constant. Therefore, in the case of a measurement value that deviates from the ratio of the measurement values ​​of each neutron beam measuring device 51 to 54 determined for each operation mode, an abnormality of the measuring device itself can be detected, or the measuring device in which an abnormality has occurred can be estimated. In addition, the measuring device in which an abnormality has occurred can be estimated by calculating the ratio of the measurement values ​​of each neutron beam measuring device 51 to 54 in a plurality of operation modes and comparing them.

[0129] According to the present embodiment, the location that may become a neutron beam generation source is estimated based on the operation mode, so that the neutron beams in the device can be appropriately monitored using the neutron beam measuring devices 51 to 54 arranged at a plurality of locations (e.g., 4 locations) less than the number of neutron beam generation sources (e.g., 8 locations). That is, compared with the case where the neutron beam measuring devices are arranged in a one-to-one correspondence with each of the neutron beam generation sources at a plurality of locations, the number of neutron beam measuring devices can be reduced, and the cost increase caused by the arrangement of a plurality of neutron beam measuring devices can be prevented.

[0130] The present invention has been described above with reference to the above-mentioned embodiments, but the present invention is not limited to the above-mentioned embodiments, and structures obtained by appropriately combining or replacing the structures of the various embodiments are also included in the present invention. In addition, it is also possible to appropriately reorganize the combination or processing sequence in each embodiment according to the knowledge of those skilled in the art, and to apply various design changes and other deformations to the embodiment, and the embodiment to which such deformation is applied may also be included in the scope of the present invention.

[0131] In the above embodiment, a plate-shaped or block-shaped neutron beam scattering component is installed in the device body 58 and the frame 60. In a modified example, a granular, gel-shaped or paste-shaped neutron beam scattering component may be provided. For example, the gel-shaped or paste-shaped neutron beam scattering component may be coated or filled on the surface or gap of the device body 58 and the frame 60. In addition, the granular neutron beam scattering component may be filled in the cavity portion in the support structure of the device body 58 and the frame 60.

[0132] One implementation of this embodiment is as follows.

[0133] (Item 1-1)

[0134] An ion implantation device, characterized in that it comprises:

[0135] The apparatus body includes a plurality of units arranged along a beam line for transmitting an ion beam and a substrate transport processing unit arranged at the most downstream of the beam line, and has a neutron ray generating source that can generate neutron rays due to collision of a high-energy ion beam;

[0136] a frame body at least partially surrounding the device body; and

[0137] The neutron beam scattering member is disposed at a position where neutron beams emitted from the neutron beam generation source may enter in a direction in which a distance from the neutron beam generation source to the housing becomes equal to or less than a predetermined value.

[0138] (Item 1-2)

[0139] The ion implantation apparatus according to item 1-1 is characterized in that

[0140] The neutron beam scattering component includes: a first neutron beam scattering component, which is arranged at a position where neutron beams emitted from the neutron beam generating source may enter in a first direction where the distance from the neutron beam generating source to the frame becomes a first distance; and a second neutron beam scattering component, which is arranged at a position where neutron beams emitted from the neutron beam generating source may enter in a second direction where the distance from the neutron beam generating source to the frame becomes a second distance greater than the first distance, and has a thickness smaller than that of the first neutron beam scattering component.

[0141] (Items 1-3)

[0142] The ion implantation apparatus according to item 1-1 or item 1-2 is characterized in that:

[0143] The neutron beam scattering component is arranged at a position where neutron beams emitted from the neutron beam generating source may enter in a first direction where the distance from the neutron beam generating source to the frame becomes a first distance, and on the other hand, is not arranged at a position where neutron beams emitted from the neutron beam generating source may enter in a third direction where the distance from the neutron beam generating source to the frame becomes a third distance greater than the first distance.

[0144] (Items 1-4)

[0145] The ion implantation apparatus according to any one of items 1-1 to 1-3, characterized in that

[0146] The neutron ray generating source is at least one of a slit, a beam monitor and a beam dump arranged in the beam line.

[0147] (Items 1-5)

[0148] The ion implantation apparatus according to any one of items 1-1 to 1-4, characterized in that

[0149] At least a part of the neutron beam scattering member is attached to the frame.

[0150] (Items 1-6)

[0151] The ion implantation device according to item 1-5 is characterized in that:

[0152] At least a part of the neutron beam scattering component is mounted on a door provided on the frame.

[0153] (Items 1-7)

[0154] The ion implantation apparatus according to any one of items 1-1 to 1-6, characterized in that

[0155] At least a part of the neutron beam scattering member is attached to at least one of the device body and a supporting structure of the device body.

[0156] (Items 1-8)

[0157] The ion implantation apparatus according to any one of items 1-1 to 1-7, characterized in that

[0158] The neutron beam scattering component is not attached to a portion of the frame disposed along a portion of the beam line.

[0159] (Items 1-9)

[0160] The ion implantation device according to item 1-8 is characterized in that:

[0161] The plurality of units include: a beam acceleration unit that accelerates an ion beam drawn from an ion source to generate the high-energy ion beam; and a beam transmission unit that transmits the high-energy ion beam toward the substrate transport processing unit.

[0162] The neutron beam scattering component is at least partially mounted on a portion of the frame disposed along the beam transmission unit, and is at least partially not mounted on a portion of the frame disposed along the beam acceleration unit.

[0163] (Items 1-10)

[0164] The ion implantation device according to item 1-9 is characterized in that:

[0165] The plurality of units further include a beam deflection unit connected between the beam acceleration unit and the beam transmission unit.

[0166] The beam line is formed into a U shape by the linear beam acceleration unit, the curved beam deflection unit, and the linear beam transmission unit.

[0167] The neutron beam scattering component is at least partially attached to a portion of the frame disposed along the beam deflecting unit.

[0168] (Items 1-11)

[0169] The ion implantation apparatus according to any one of items 1-1 to 1-10, characterized in that

[0170] The substrate transfer processing unit comprises: an implantation processing chamber for performing implantation processing of irradiating the high energy ion beam to the wafer; a loading port for loading a wafer container capable of accommodating a plurality of wafers; and a substrate transfer device for transferring the wafer between the implantation processing chamber and the wafer container.

[0171] The frame has a wafer container transfer port vertically above the load port, configured so that the wafer container can pass through in a vertical direction.

[0172] The neutron ray scattering component is configured not to hinder transfer of the wafer container in the wafer container transfer port.

[0173] (Items 1-12)

[0174] The ion implantation device according to item 1-11 is characterized in that:

[0175] Parts of the neutron beam scattering members are arranged to overlap in the horizontal direction with the wafer container transfer port interposed therebetween.

[0176] (Items 1-13)

[0177] The ion implantation device according to item 1-11 or item 1-12 is characterized in that:

[0178] The frame has: an entrance and an exit arranged on the front of the loading port; a hinged door closing the right end or the left end of the entrance and an exit; and two sliding doors closing the remaining part of the entrance and an exit not closed by the hinged door.

[0179] The neutron beam scattering member is attached to both the hinged door and the sliding door.

[0180] (Items 1-14)

[0181] The ion implantation device according to item 1-11 or item 1-12 is characterized in that:

[0182] The frame has: an entrance and an exit arranged on the front of the loading port; two hinged doors closing the right and left ends of the entrance and an exit; and a sliding door closing the center of the entrance and an exit not closed by the two hinged doors.

[0183] The neutron beam scattering member is attached to both the hinged door and the sliding door.

[0184] (Items 1-15)

[0185] The ion implantation apparatus according to any one of items 1-1 to 1-14, characterized in that

[0186] The frame includes: a side wall portion, which is arranged on the side of the device body; a ceiling portion, which is arranged vertically above the device body; and a bottom plate portion, which is arranged vertically below the device body.

[0187] Each of the side wall portion, the ceiling portion, and the bottom plate portion has a portion where the neutron beam scattering member is mounted and a portion where the neutron beam scattering member is not mounted.

[0188] (Items 1-16)

[0189] The ion implantation apparatus according to any one of items 1-1 to 1-15, characterized in that

[0190] The neutron ray scattering component is composed of hydrogen atoms with a content of 0.08 g / cm 3 ~0.15g / cm 3 material composition.

[0191] (Items 1-17)

[0192] The ion implantation apparatus according to any one of items 1-1 to 1-16, characterized in that

[0193] The neutron ray scattering member includes polyolefin.

[0194] (Items 1-18)

[0195] The ion implantation device according to item 1-17 is characterized in that:

[0196] The neutron ray scattering component further contains boron atoms.

[0197] (Items 1-19)

[0198] The ion implantation apparatus according to any one of items 1-1 to 1-18, characterized in that

[0199] At least a portion of the neutron ray scattering member is in a plate shape or a block shape.

[0200] (Items 1-20)

[0201] The ion implantation device according to item 1-19 is characterized in that:

[0202] A non-combustible sheet is attached to the surface of the plate-shaped or block-shaped neutron beam scattering member.

[0203] (Items 1-21)

[0204] The ion implantation apparatus according to any one of items 1-1 to 1-20, characterized in that:

[0205] At least a part of the neutron ray scattering member is in a granular, gel or paste state.

[0206] (Items 1-22)

[0207] The ion implantation apparatus according to any one of Items 1-1 to 1-21, further comprising an X-ray shielding member attached to the housing.

[0208] (Items 1-23)

[0209] The ion implantation apparatus according to any one of items 1-1 to 1-22, characterized in that the high-energy ion beam contains boron ions having an energy of 4 MeV or more.

[0210] Another implementation of this embodiment is as follows.

[0211] (Item 2-1)

[0212] An ion implantation device, characterized in that it comprises:

[0213] a plurality of devices arranged along a beam line for transmitting the ion beam;

[0214] a plurality of neutron beam measuring devices arranged at a plurality of positions near the beam line and measuring neutron beams that may be generated at a plurality of positions of the beam line due to collision of the high-energy ion beam; and

[0215] The control device monitors at least one of the plurality of devices based on a measurement value of at least one neutron ray measuring device among the plurality of neutron ray measuring devices.

[0216] (Item 2-2)

[0217] The ion implantation apparatus according to item 2-1 is characterized in that

[0218] The control device estimates the position of a neutron ray generation source at at least one location in the beam line based on the measurement values ​​of the plurality of neutron ray measuring devices.

[0219] (Item 2-3)

[0220] The ion implantation apparatus according to item 2-1 or item 2-2 is characterized in that:

[0221] The control device estimates the intensity of neutron beams emitted from a neutron beam generation source at least at one location in the beam line based on the measurement values ​​of the plurality of neutron beam measuring devices.

[0222] (Items 2-4)

[0223] The ion implantation apparatus according to any one of items 2-1 to 2-3, characterized in that

[0224] At least one of the plurality of neutron beam measuring devices is arranged near at least one of a slit, a beam monitor, and a beam dump provided in the beamline.

[0225] (Items 2-5)

[0226] The ion implantation apparatus according to any one of items 2-1 to 2-4, characterized in that

[0227] The control device detects an abnormality in at least one of the plurality of devices based on information on the operation modes of the plurality of devices and a measurement value of at least one neutron beam measuring device in a specific operation mode.

[0228] (Items 2-6)

[0229] The ion implantation device according to item 2-5 is characterized in that:

[0230] When a measurement value of the at least one neutron beam measuring device exceeds a reference value determined corresponding to the specific operation mode, the control device changes an operation condition of at least one of the plurality of devices so that the measurement value becomes equal to or less than the reference value.

[0231] (Items 2-7)

[0232] The ion implantation apparatus according to any one of items 2-1 to 2-6, characterized in that

[0233] The control device stores correlation data between the operation modes of the plurality of devices and the measurement values ​​of the plurality of neutron beam measuring devices in a specific operation mode, and estimates a device requiring maintenance among the plurality of devices based on the stored correlation data.

[0234] (Items 2-8)

[0235] The ion implantation device according to item 2-7 is characterized in that:

[0236] The control device estimates a maintenance period for at least one of the plurality of devices based on the stored associated data.

[0237] (Items 2-9)

[0238] The ion implantation apparatus according to any one of items 2-1 to 2-8, characterized in that

[0239] The control device detects an abnormality in at least one of the plurality of devices based on information on the operation modes of the plurality of devices and measurement values ​​of at least two or more neutron beam measuring devices in a specific operation mode.

[0240] (Items 2-10)

[0241] The ion implantation apparatus according to any one of items 2-1 to 2-9, characterized in that

[0242] The plurality of devices include: a beam accelerator, which accelerates an ion beam drawn from an ion source to generate the high-energy ion beam; and an energy analysis device, which is arranged downstream of the beam accelerator.

[0243] The control device uses at least two neutron beam measuring devices to monitor neutron beams that may be generated in at least one of the beam accelerator and the energy analyzer, and adjusts at least one of energy and beam current of the ion beam output from the energy analyzer.

[0244] (Items 2-11)

[0245] The ion implantation device according to item 2-10 is characterized in that:

[0246] The plurality of neutron beam measuring devices include: a first measuring device disposed near a slit provided at an exit of the beam accelerator; and a second measuring device disposed near a slit provided at an exit of the energy analyzer and a beam monitor.

[0247] The control device monitors neutron rays that may be generated in at least one of the beam accelerator and the energy analyzer using the first measuring device and the second measuring device.

[0248] (Items 2-12)

[0249] The ion implantation device according to item 2-11 is characterized in that:

[0250] The control device monitors neutron rays that may be generated downstream of the energy analyzer in the beam line using the first measuring device and the second measuring device.

[0251] (Items 2-13)

[0252] The ion implantation apparatus according to any one of items 2-1 to 2-12, characterized in that

[0253] The plurality of devices include a beam deflection device that applies at least one of an electric field and a magnetic field to the ion beam and causes the ion beam to retreat toward a beam dump that is disposed separately from the beam line.

[0254] The control device uses at least two neutron beam detectors to monitor neutron beams that may be generated in the beam dump when the ion beam is retracted by the beam deflection device.

[0255] (Items 2-14)

[0256] The ion implantation apparatus according to any one of items 2-1 to 2-13, characterized in that

[0257] The plurality of neutron beam measuring devices include: a third measuring device disposed upstream of a beam monitor disposed near an implantation position where a wafer irradiated with the ion beam is disposed; and a fourth measuring device disposed downstream of the beam monitor disposed near the implantation position.

[0258] The control device monitors neutron rays generated in the beam monitor that may be provided near the implantation position using the third measuring device and the fourth measuring device.

[0259] (Items 2-15)

[0260] The ion implantation apparatus according to any one of items 2-1 to 2-14, characterized in that

[0261] The control device detects abnormality of at least one neutron ray measuring device itself based on information on the operation modes of the plurality of devices and measurement values ​​of the plurality of neutron ray measuring devices in a specific operation mode.

[0262] (Items 2-16)

[0263] The ion implantation apparatus according to any one of items 2-1 to 2-15, further comprising a frame surrounding the plurality of devices and the plurality of neutron beam measuring devices,

[0264] The control device estimates a neutron dose rate outside the housing based on the measurement values ​​of the plurality of neutron beam measuring devices.

[0265] (Items 2-17)

[0266] The ion implantation device according to item 2-16 is characterized in that:

[0267] The control device estimates a neutron dose rate outside the housing based on at least one of a neutron beam scattering material included in the housing and a neutron beam scattering material arranged near the beam line.

[0268] (Items 2-18)

[0269] The ion implantation device according to item 2-16 or item 2-17 is characterized in that:

[0270] When the estimated neutron dose rate outside the housing exceeds a predetermined upper limit, the control device changes an operating condition of at least one of the plurality of devices so as to reduce the neutron dose rate outside the housing.

[0271] (Items 2-19)

[0272] The ion implantation device according to any one of items 2-16 to 2-18 is characterized in that:

[0273] The control device estimates the dose rate distribution of neutron beams inside the housing based on the measurement values ​​of the plurality of neutron beam measuring devices.

[0274] (Items 2-20)

[0275] The ion implantation apparatus according to any one of items 2-1 to 2-19, characterized in that

[0276] The high-energy ion beam includes boron (B) ions having an energy of 4 MeV or more.

[0277] (Items 2-21)

[0278] An ion implantation method, characterized by comprising:

[0279] The step of measuring neutron rays that may be generated at multiple locations of the beam line due to collision of the high-energy ion beam using multiple neutron beam measuring devices arranged at multiple locations near the beam line that transmits the ion beam; and

[0280] A process of monitoring at least one of a plurality of devices arranged along the beamline is performed based on a measurement value of at least one neutron beam measuring device among the plurality of neutron beam measuring devices.

Claims

1. An ion implantation device, characterized in that: have: a plurality of devices arranged along a beam line for transmitting the ion beam; a plurality of neutron beam measuring devices arranged at a plurality of positions near the beam line and measuring neutron beams that may be generated at a plurality of positions of the beam line due to collision of the high-energy ion beam; and The control device operates the multiple devices in multiple operation modes, and monitors at least one of the multiple devices based on the measurement values ​​of the multiple neutron beam measuring devices in each of the multiple operation modes and different abnormality detection criteria set according to the multiple operation modes.

2. The ion implantation device according to claim 1, characterized in that: The control device estimates the position of a neutron ray generation source at at least one location in the beam line based on the measurement values ​​of the plurality of neutron ray measuring devices.

3. The ion implantation device according to claim 1 or 2, characterized in that: The control device estimates the intensity of neutron beams emitted from a neutron beam generation source at least at one location in the beam line based on the measurement values ​​of the plurality of neutron beam measuring devices.

4. The ion implantation device according to claim 1 or 2, characterized in that: At least one of the plurality of neutron beam measuring devices is arranged near at least one of a slit, a beam monitor, and a beam dump provided in the beamline.

5. The ion implantation device according to claim 1 or 2, characterized in that: The control device detects an abnormality in at least one of the plurality of devices based on a measurement value of at least one neutron ray measuring device in a specific operation mode.

6. The ion implantation device according to claim 1 or 2, characterized in that: The control device detects an abnormality of at least one neutron ray measuring device itself based on the measurement values ​​of the plurality of neutron ray measuring devices in a specific operation mode.

7. The ion implantation device according to claim 1 or 2, characterized in that: The control device stores correlation data between the operation modes of the plurality of devices and the measurement values ​​of the plurality of neutron beam measuring devices in a specific operation mode, and estimates a device that requires maintenance among the plurality of devices based on the stored correlation data.

8. The ion implantation device according to claim 7, characterized in that: The control device estimates a maintenance period for at least one of the plurality of devices based on the stored association data.

9. The ion implantation device according to claim 1 or 2, characterized in that: The control device detects an abnormality in at least one of the plurality of devices based on measurement values ​​of at least two or more neutron beam measuring devices in a specific operation mode.

10. The ion implantation device according to claim 1 or 2, characterized in that: The plurality of devices include: a beam accelerator, which accelerates an ion beam drawn from an ion source to generate the high-energy ion beam; and an energy analysis device, which is arranged downstream of the beam accelerator. The control device uses at least two neutron beam measuring devices to monitor neutron beams that may be generated in at least one of the beam accelerator and the energy analyzer, and adjusts at least one of energy and beam current of the ion beam output from the energy analyzer.

11. The ion implantation device according to claim 10, characterized in that: The plurality of neutron beam measuring devices include: a first measuring device disposed near a slit provided at an exit of the beam accelerator; and a second measuring device disposed near a slit provided at an exit of the energy analyzer and a beam monitor. The control device monitors neutron rays that may be generated in at least one of the beam accelerator and the energy analyzer using the first measuring device and the second measuring device.

12. The ion implantation device according to claim 11, characterized in that: The control device monitors neutron rays that may be generated downstream of the energy analyzer in the beam line using the first measuring device and the second measuring device.

13. The ion implantation device according to claim 1 or 2, characterized in that: The plurality of devices include a beam deflection device that applies at least one of an electric field and a magnetic field to the ion beam and causes the ion beam to retreat toward a beam dump that is disposed separately from the beam line. The control device uses at least two neutron beam detectors to monitor neutron beams that may be generated in the beam dump when the ion beam is retracted by the beam deflection device.

14. The ion implantation device according to claim 1 or 2, characterized in that: The plurality of neutron beam measuring devices include: a third measuring device disposed upstream of a beam monitor disposed near an implantation position where a wafer irradiated with the ion beam is disposed; and a fourth measuring device disposed downstream of the beam monitor disposed near the implantation position. The control device monitors neutron rays generated in the beam monitor that may be provided near the implantation position using the third measuring device and the fourth measuring device.

15. The ion implantation device according to claim 1 or 2, characterized in that: It also includes a frame surrounding the plurality of devices and the plurality of neutron beam measuring devices, The control device estimates a neutron dose rate outside the housing based on the measurement values ​​of the plurality of neutron beam measuring devices.

16. The ion implantation device according to claim 15, characterized in that: The control device further estimates a neutron dose rate outside the housing based on at least one of a neutron beam scattering material included in the housing and a neutron beam scattering material arranged near the beam line.

17. The ion implantation device according to claim 15 or 16, characterized in that: The control device estimates the dose rate distribution of the neutron beam inside the housing based on the measurement values ​​of the plurality of neutron beam measuring devices.

18. The ion implantation device according to claim 1 or 2, characterized in that: The high-energy ion beam includes boron (B) ions having an energy of 4 MeV or more.

19. An ion implantation method, characterized in that: have: a step of operating a plurality of devices arranged along a beam line for transmitting an ion beam in a plurality of operation modes; The step of measuring neutron beams that may be generated at a plurality of locations of the beamline due to collision of the high-energy ion beam in the plurality of operation modes, using a plurality of neutron beam measuring devices disposed at a plurality of locations near the beamline; and The process of at least one of the plurality of devices is monitored based on the measurement values ​​of the plurality of neutron beam measuring devices in each of the plurality of operation modes and different abnormality detection criteria set for each of the plurality of operation modes.

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