An internal table strong negative resistance switching diode

Abstract

The present invention discloses an inner table strong negative resistance switching diode, comprising a switching diode body, which is composed of a cylindrical plastic-sealed shell, a positive electrode pin, a negative electrode pin, two waterproof sealing plates, a P-type impurity and an N-type silicon wafer. The openings at both ends of the cylindrical plastic-sealed shell are respectively plastic-sealed and connected to the two waterproof sealing plates. A first conductive threaded column is threadedly connected to a first internal threaded groove provided on one side of the N-type silicon wafer. A second conductive threaded column is fixedly provided at one end of the positive electrode pin, and the second conductive threaded column is threadedly connected to a second internal threaded groove provided on one side of the P-type impurity. The present invention facilitates rapid assembly and connection of the positive electrode pin and the negative electrode pin by providing the first internal threaded groove, the second internal threaded groove, the first conductive threaded column and the second conductive threaded column. At the same time, the positive electrode pin and the negative electrode pin are not easily broken, thereby improving the performance of the switching diode body and improving the reliability of the switching diode body.

Description

Technical Field

[0001] The invention relates to the technical field of switching diodes, in particular to an inner-table strong negative resistance switching diode. Background Art

[0002] A switching diode is a type of semiconductor diode that is specially designed and manufactured for "on" and "off" switching in circuits. The time required for it to change from on to off or from off to on is shorter than that of ordinary diodes. Common series include 2AK, 2DK, etc., which are mainly used in electronic computers, pulse and switching circuits.

[0003] In the process of realizing the present invention, the inventors found that at least the following problems exist in the prior art and have not been solved:

[0004] (1) The positive and negative pins of existing switching diodes are mostly connected by fixed welding, which is not convenient for replacement. Firstly, due to the small welding area of ​​the welding point, the pins are easily broken, causing the switching diode to be unable to be used normally and inconvenient to use;

[0005] (2) The overall structural strength of existing switching diodes is low, and the heat dissipation and thermal conductivity are poor, which cannot meet normal usage requirements.

[0006] (3) The overall assembly efficiency of existing switching diodes is low, making it difficult to meet the production needs of high output. Summary of the Invention

[0007] The object of the present invention is to provide an inner-table strong negative resistance switching diode to solve the problems raised in the above background technology.

[0008] To achieve the above-mentioned objectives, the present invention provides the following technical solutions: an inner table strong negative resistance switching diode, comprising a switching diode body, the switching diode body consisting of a cylindrical plastic-sealed shell, a positive pin, a negative pin, two waterproof sealing plates, a P-type impurity and an N-type silicon wafer, the openings at both ends of the cylindrical plastic-sealed shell are respectively plastic-sealed with the two waterproof sealing plates, the top and bottom of one side of one of the waterproof sealing plates are fixedly provided with insulating card grooves, the interiors of the two insulating card grooves are slidably connected to a substrate, one side of the substrate is fixedly connected to the N-type silicon wafer, one side of the other waterproof sealing plate is fixedly connected to the P-type impurity, a PN junction is formed between the P-type impurity and the N-type silicon wafer, one end of the negative pin is fixedly provided with a first conductive threaded column, the first conductive threaded column is threadedly connected to a first internal threaded groove opened on one side of the N-type silicon wafer, one end of the positive pin is fixedly provided with a second conductive threaded column, the second conductive threaded column is threadedly connected to a second internal threaded groove opened on one side of the P-type impurity.

[0009] Preferably, an aluminum alloy protective cover is fixedly provided on the other side of the two waterproof sealing plates, and one end of the positive electrode pin and one end of the negative electrode pin are interlaced and connected with the corresponding aluminum alloy protective cover.

[0010] Preferably, the gap between the cylindrical plastic shell and the P-type impurities and the N-type silicon wafer is filled with an epoxy resin layer.

[0011] Preferably, heat conducting plates are fixedly provided on both sides of the top end of the cylindrical plastic-sealed shell.

[0012] Preferably, three equidistantly distributed reinforcing rib rings are fixedly provided at the middle portion of the outer surface of the cylindrical plastic-sealed shell, and the three reinforcing rib rings and the cylindrical plastic-sealed shell form an integrated structure.

[0013] Preferably, an adhesive plate is fixedly provided at the middle of the bottom end of the cylindrical plastic-sealed shell, and protective films are bonded and connected to the surfaces of the two adhesive plates.

[0014] Preferably, the cylindrical plastic-sealed shell, the two waterproof sealing plates and the reinforcing rib ring are all made of resin material.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] (1) The present invention provides an inner table strong negative resistance switching diode, which is convenient for quick assembly and connection of the positive electrode pin and the negative electrode pin by providing a first inner thread groove, a second inner thread groove, a first conductive thread column and a second conductive thread column. At the same time, it can make the positive electrode pin and the negative electrode pin less likely to break, thereby improving the performance of the switching diode body and improving the reliability of the switching diode body.

[0017] (2) The present invention provides an inner table strong negative resistance switching diode, which improves the overall structural strength of the switching diode body, increases wear resistance and drop resistance through the provision of a reinforcing rib ring, a heat conducting plate and a cylindrical plastic-sealed shell made of resin material. The heat conducting plate facilitates heat dissipation and facilitates better electrical conduction of the internal N-type silicon wafer and P-type impurities.

[0018] (3) The present invention provides an inner table strong negative resistance switching diode, which can quickly assemble the switching diode body by means of an insulating card slot and a waterproof sealing plate, thereby improving production efficiency, meeting the production needs of high output, and having strong practicality.

[0019] (4) The present invention provides an inner table strong negative resistance switching diode, which is easy to install the switching diode body quickly through the provided adhesive plate and protective film, and is easy to operate. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of the present invention;

[0021] Figure 2 This is a schematic diagram of the internal structure of the cylindrical plastic-sealed shell of the present invention;

[0022] Figure 3 It is a structural schematic diagram of the first internal thread groove and the second internal thread groove of the present invention;

[0023] Figure 4 This is a schematic structural diagram of the cylindrical plastic-sealed housing of the present invention;

[0024] In the figure: 1. Cylindrical plastic shell; 2. Positive pin; 3. Negative pin; 4. Waterproof sealing plate; 5. Reinforcement rib ring; 6. Heat conducting plate; 7. P-type impurities; 8. PN junction; 9. N-type silicon wafer; 10. Substrate; 11. Insulation card slot; 12. Aluminum alloy protective cover; 13. First internal thread groove; 14. First conductive thread column; 15. Second internal thread groove; 16. Second conductive thread column; 17. Epoxy resin layer; 18. Adhesive plate; 19. Protective film. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0026] See also Figure 1-4 , the present invention provides an embodiment: an inner table strong negative resistance switching diode, including a switching diode body, the switching diode body consists of a cylindrical plastic-sealed shell 1, a positive pin 2, a negative pin 3, two waterproof sealing plates 4, a P-type impurity 7 and an N-type silicon wafer 9, the openings at both ends of the cylindrical plastic-sealed shell 1 are respectively plastic-sealed with the two waterproof sealing plates 4, the top and bottom of one side of one waterproof sealing plate 4 are fixedly provided with insulating card grooves 11, the interiors of the two insulating card grooves 11 are slidably connected with a substrate 10, one side of the substrate 10 is fixedly connected to the N-type silicon wafer 9, one side of the other waterproof sealing plate 4 is fixedly connected to the P-type impurity 7, a PN junction 8 is formed between the P-type impurity 7 and the N-type silicon wafer 9, one end of the negative pin 3 is fixedly provided with a first conductive threaded column 14, the first conductive threaded column 14 is threadedly connected to a first internal threaded groove 13 opened on one side of the N-type silicon wafer 9, one end of the positive pin 2 is fixedly provided with a second conductive threaded column 16, the second conductive threaded column 16 is threadedly connected to a second internal threaded groove 15 opened on one side of the P-type impurity 7.

[0027] The other side of the two waterproof sealing plates 4 are fixed with an aluminum alloy protective cover 12, one end of the positive pin 2 and one end of the negative pin 3 are connected with the corresponding aluminum alloy protective cover 12, which is convenient for protecting the positive pin 2 and the negative pin 3 to avoid breaking. The gap between the cylindrical plastic shell 1 and the P-type impurity 7 and the N-type silicon wafer 9 is filled with an epoxy resin layer 17 to improve the service life of the switching diode body. Heat-conducting plates 6 are fixed on both sides of the top of the cylindrical plastic shell 1. The heat-conducting plates 6 are convenient for dissipating heat, which is convenient for the internal N-type silicon wafer 9 and P-type impurities 7 to conduct electricity better. The cylindrical plastic shell 1 is fixedly provided with three equidistantly distributed reinforcing rib rings 5 ​​in the middle of the outer surface, and the three reinforcing rib rings 5 ​​and the cylindrical plastic-sealed shell 1 are an integrated structure. The reinforcing rib rings 5 ​​improve the overall structural strength of the switching diode body, increase wear resistance and drop resistance. An adhesive plate 18 is fixedly provided in the middle of the bottom end of the cylindrical plastic-sealed shell 1. The surfaces of the two adhesive plates 18 are both bonded and connected with protective films 19, which facilitates quick installation of the switching diode body and is easy to operate. The cylindrical plastic-sealed shell 1, the two waterproof sealing plates 4 and the reinforcing rib rings 5 ​​are all made of resin material, which improves the overall structural strength of the switching diode body and has good drop resistance.

[0028] Working principle: When the present invention is in use, the switching diode body is connected to the circuit through the positive pin 2 and the negative pin 3. By tearing off the protective film 19, the switching diode body is bonded to the inner table through the adhesive plate 18. When the positive pin 2 and the negative pin 3 are both at a forward voltage, the switching diode body is turned on and transmits current. When the positive pin 2 and the negative pin 3 are both at a reverse voltage, the switching diode body is disconnected and prevents current from being transmitted. In summary, the present invention facilitates rapid assembly and connection of the positive pin 2 and the negative pin by providing the first internal thread groove 13, the second internal thread groove 15, the first conductive thread column 14 and the second conductive thread column 16. The positive electrode pin 3 can make the positive electrode pin 2 and the negative electrode pin 3 less likely to break, thereby improving the performance of the switching diode body and improving the reliability of the switching diode body. The reinforcing rib ring 5, the heat conducting plate 6 and the cylindrical plastic package shell 1 made of resin material are provided to improve the overall structural strength of the switching diode body, increase the wear resistance and drop resistance, and the heat conducting plate 6 is convenient for dissipating heat, which is convenient for the internal N-type silicon chip 9 and P-type impurities 7 to conduct electricity better. The insulating card slot 11 and the waterproof sealing plate 4 are provided to quickly assemble the switching diode body, improve production efficiency, meet the production needs of high output, and have strong practicality.

[0029] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

Claims

1. An inner table strong negative resistance switching diode, comprising a switching diode body, characterized in that: The switching diode body is composed of a cylindrical plastic-sealed shell (1), a positive electrode pin (2), a negative electrode pin (3), two waterproof sealing plates (4), a P-type impurity (7) and an N-type silicon wafer (9). The openings at both ends of the cylindrical plastic-sealed shell (1) are respectively connected to the two waterproof sealing plates (4) by plastic sealing. The top and bottom of one side of the waterproof sealing plate (4) are fixedly provided with an insulating card groove (11). The interiors of the two insulating card grooves (11) are slidably connected to a substrate (10). One side of the substrate (10) is fixedly connected to the N-type silicon wafer (9). The other side One side of the waterproof sealing plate (4) is fixedly connected to the P-type impurity (7), and a PN junction (8) is formed between the P-type impurity (7) and the N-type silicon wafer (9). One end of the negative electrode pin (3) is fixedly provided with a first conductive threaded column (14), and the first conductive threaded column (14) is threadedly connected to a first internal threaded groove (13) opened on one side of the N-type silicon wafer (9). One end of the positive electrode pin (2) is fixedly provided with a second conductive threaded column (16), and the second conductive threaded column (16) is threadedly connected to a second internal threaded groove (15) opened on one side of the P-type impurity (7); An aluminum alloy protective cover (12) is fixedly provided on the other side of the two waterproof sealing plates (4), and one end of the positive electrode pin (2) and one end of the negative electrode pin (3) are interlaced and connected with the corresponding aluminum alloy protective cover (12); The gap between the cylindrical plastic-sealed shell (1), the P-type impurities (7) and the N-type silicon wafer (9) is filled with an epoxy resin layer (17); Heat conducting plates (6) are fixedly provided on both sides of the top end of the cylindrical plastic-sealed shell (1); Three equidistantly distributed reinforcing rib rings (5) are fixedly provided at the middle portion of the outer surface of the cylindrical plastic-sealed shell (1), and the three reinforcing rib rings (5) and the cylindrical plastic-sealed shell (1) form an integrated structure; An adhesive plate (18) is fixedly provided at the middle of the bottom end of the cylindrical plastic-sealed shell (1), and protective films (19) are attached to the surfaces of the two adhesive plates (18); The cylindrical plastic-sealed shell (1), the two waterproof sealing plates (4) and the reinforcing rib ring (5) are all made of resin material.

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