Substrate processing device, substrate processing method and semiconductor manufacturing method

Abstract

The present invention provides a substrate processing device, a substrate processing method and a semiconductor manufacturing method. The substrate processing device includes a substrate holding part, a chamber, a first gas supply part, a second gas supply part and a control part. The chamber includes a side wall part and a top wall part, which accommodate the substrate holding part. The first gas supply part is arranged on the top wall part, and supplies the first gas toward the side where the substrate holding part is located. The second gas supply part is accommodated in the chamber, and supplies the second gas into the chamber. The control part controls the first gas supply part (13) and the second gas supply part (41). The second gas is a gas different from oxygen and different from an allotrope of oxygen. The second gas supply part includes an air supply port part. The air supply port part is located at a position higher in the vertical direction than the holding position of the substrate holding part for the substrate, and is located at a position higher in the horizontal direction than the substrate holding part.

Description

Technical Field

[0001] The invention relates to a substrate processing device, a substrate processing method and a semiconductor manufacturing method. Background Art

[0002] In the substrate processing apparatus described in Patent Document 1, oxidation of the substrate is suppressed when the substrate is processed in the chamber.

[0003] Specifically, the substrate is arranged above the spin base. The facing surface of the shielding member is arranged above the substrate. The inner peripheral surface of the shielding member is arranged around the substrate. Moreover, an inert gas is ejected downward from a downward ejection port opened on the facing surface of the shielding member. The inert gas ejected from the downward ejection port of the shielding member diffuses in the space between the upper surface of the substrate and the facing surface of the shielding member, and is discharged from the lower end of the inner peripheral surface of the shielding member and the outer peripheral surface of the spin base. Since the space between the substrate and the shielding member is filled with inert gas, the oxygen concentration in the ambient gas in contact with the upper surface and the outer peripheral surface of the substrate is reduced.

[0004] Furthermore, by ejecting the inert gas from the upward ejection port of the spin base while the inert gas is ejected from the downward ejection port of the shielding member, it is possible to suppress the movement of the atmosphere containing oxygen between the upper surface of the substrate and the facing surface of the shielding member. As a result, the oxygen concentration in the atmosphere contacting the substrate W can be reduced.

[0005] In addition, the substrate is placed on the chuck pins by a center robot while the inert gas is ejected from the upward ejection port of the spin base. While the substrate is close to the chuck pins, the inert gas ejected from the upward ejection port of the spin base diffuses between the substrate and the spin base, and the ambient gas containing oxygen is discharged. By discharging the ambient gas containing oxygen in advance, it is possible to suppress the ambient gas containing oxygen from moving from between the substrate and the spin base to between the substrate and the shielding member.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2015-153947 Summary of the invention

[0009] Problems to be solved by the invention

[0010] However, in recent years, there has been a demand for further suppressing the oxidation of the substrate. Therefore, the inventors of the present application paid attention to the phenomenon that the substrate may be oxidized when the substrate is transported in the chamber.

[0011] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method capable of suppressing oxidation of a substrate when the substrate is transported in a chamber.

[0012] Technical means of solving problems

[0013] According to one aspect of the present invention, a substrate processing device processes a substrate. The substrate processing device includes a substrate holding portion, a chamber, a first gas supply portion, a second gas supply portion, and a control portion. The substrate holding portion holds the substrate. The chamber includes a side wall portion arranged around the substrate holding portion, and a top wall portion arranged above the substrate holding portion, and accommodates the substrate holding portion. The first gas supply portion is arranged on the top wall portion, and supplies a first gas toward a side where the substrate holding portion is located. The second gas supply portion is accommodated in the chamber, and supplies a second gas into the chamber. The control portion controls the first gas supply portion and the second gas supply portion. The second gas is a gas different from oxygen and different from an allotrope of oxygen. The second gas supply portion includes an air supply port portion for supplying the second gas into the chamber. The air supply port portion is located at a position that is vertically higher than the holding position of the substrate holding portion for the substrate, and is located at a position that is horizontally higher than the substrate holding portion.

[0014] In the substrate processing apparatus of the present invention, the second gas supply unit preferably supplies the second gas toward the top wall portion through the air supply port portion.

[0015] In the substrate processing apparatus of the present invention, the air supply port is preferably arranged above a conveyance path of the substrate. The conveyance path preferably refers to a path when the substrate is conveyed through an openable and closable opening provided in the side wall.

[0016] In the substrate processing apparatus of the present invention, the control unit preferably controls the first gas supply unit to supply the first gas and controls the second gas supply unit not to supply the second gas during a period of processing the substrate. The control unit preferably controls the first gas supply unit not to supply the first gas and controls the second gas supply unit to supply the second gas during at least one of a period after processing the substrate and before the substrate is unloaded from the chamber and a period before the substrate is loaded into the chamber.

[0017] In the substrate processing apparatus of the present invention, the first gas supply unit preferably includes: an air intake port for inhaling the first gas from the outside of the chamber; and a supply port for supplying the first gas to the side where the substrate holding unit is located. The substrate processing apparatus preferably further includes an opening and closing member for opening or blocking the air intake port. The control unit preferably controls the opening and closing member to open the air intake port during the period of processing the substrate. The control unit preferably controls the opening and closing member to block the air intake port during the at least one period.

[0018] The substrate processing apparatus of the present invention preferably further includes a shielding member and a third gas supply unit. The shielding member is preferably located above the substrate holding portion, and rises or falls between the retreat position and the processing position. The third gas supply unit is preferably arranged on the shielding member, and supplies the third gas toward the bottom of the shielding member. The third gas is preferably a gas different from oxygen and different from an allotrope of oxygen. The processing position preferably indicates a position where the shielding member is lowered and arranged opposite to the surface of the substrate with a gap. The retreat position preferably indicates a position where the shielding member is raised and separated from the surface of the substrate. The control unit preferably controls the shielding member so that the shielding member is located in the retreat position during the at least one period, and controls the third gas supply unit to supply the third gas.

[0019] In the substrate processing apparatus of the present invention, the control unit preferably controls the shielding member to be located at the processing position during the period of processing the substrate, and controls the third gas supply unit to supply the third gas. The shielding member preferably covers the upper surface of the substrate at the processing position and shields the upper surface of the substrate.

[0020] In the substrate processing apparatus of the present invention, the first gas supply unit preferably selectively supplies any one of the first gas and the fourth gas. The fourth gas is preferably a gas different from oxygen and different from an allotrope of oxygen. The control unit preferably controls the first gas supply unit to supply the first gas and controls the second gas supply unit not to supply the second gas during the period of processing the substrate. The control unit preferably controls the first gas supply unit to supply the fourth gas toward the side where the substrate holding unit is located and controls the second gas supply unit to supply the second gas during at least one of a period after processing the substrate and before the substrate is moved out of the chamber and a period before the substrate is moved into the chamber.

[0021] The substrate processing device of the present invention preferably further includes an exhaust pipe and an exhaust regulating unit. The exhaust pipe is preferably arranged at a position lower than the substrate holding unit in the vertical direction for the gas in the chamber to pass through. The exhaust regulating unit preferably regulates the flow rate of the gas discharged through the exhaust pipe. The control unit preferably controls the exhaust regulating unit during the period of processing the substrate so that the gas is discharged through the exhaust pipe. The control unit preferably controls the exhaust regulating unit during the at least one period so that the flow rate of the gas in the exhaust pipe is less than the flow rate of the gas in the exhaust pipe during the period of processing the substrate.

[0022] According to another aspect of the present invention, in a substrate processing method, a substrate held by a substrate holding portion in a chamber is processed. The substrate processing method includes the following steps: supplying a first gas from a top wall portion of the chamber to a side of the substrate holding portion surrounded by a side wall portion of the chamber where the substrate holding portion is located; and supplying a second gas into the chamber during a period different from a period during which the step of supplying the first gas is performed. The second gas is a gas different from oxygen and different from an allotrope of oxygen. In the step of supplying the second gas, the second gas is supplied from a position that is vertically higher than a holding position of the substrate holding portion for the substrate and horizontally higher than the substrate holding portion.

[0023] In the substrate processing method of the present invention, it is preferable that, in the step of supplying the second gas, the second gas is supplied toward the top wall portion.

[0024] In the substrate processing method of the present invention, preferably, in the step of supplying the second gas, the second gas is supplied from a position above a transport path of the substrate. The transport path preferably refers to a path when the substrate is transported through an openable and closable opening provided in the side wall portion.

[0025] In the substrate processing method of the present invention, it is preferred that in the step of supplying the first gas, the first gas is supplied during a period in which the substrate is processed. It is preferred that the second gas is not supplied during the period in which the substrate is processed. It is preferred that in the step of supplying the second gas, the second gas is supplied during at least one of a period after the substrate is processed and before the substrate is carried out of the chamber and a period before the substrate is carried into the chamber. It is preferred that the first gas is not supplied during the at least one period.

[0026] The substrate processing method of the present invention preferably further includes the steps of: opening a gas inlet for sucking the first gas from outside the chamber during the period of processing the substrate; and blocking the gas inlet during the at least one period.

[0027] The substrate processing method of the present invention preferably further comprises the following steps: placing the shielding member in a retreat position during the at least one period; and supplying a third gas toward the bottom of the shielding member during the at least one period. The retreat position preferably refers to a position where the shielding member rises and is separated from the surface of the substrate. The third gas is preferably a gas different from oxygen and a gas different from an allotrope of oxygen.

[0028] The substrate processing method of the present invention preferably further comprises the following steps: during the period of processing the substrate, the shielding member is located at a processing position; and during the period of processing the substrate, the third gas is supplied toward the bottom of the shielding member. The processing position preferably refers to a position where the shielding member is lowered and arranged to face the surface of the substrate with a gap. The shielding member preferably covers the upper surface of the substrate and shields the upper surface of the substrate at the processing position.

[0029] In the substrate processing method of the present invention, it is preferred that in the step of supplying the first gas, the first gas is supplied from the top wall of the chamber to the side where the substrate holding portion is located during the period of processing the substrate. It is preferred that the second gas is not supplied during the period of processing the substrate. It is preferred that in the step of supplying the second gas, the second gas is supplied during at least one of a period after processing the substrate and before the substrate is moved out of the chamber and a period before the substrate is moved into the chamber. The substrate processing method preferably further includes the step of supplying a fourth gas from the top wall of the chamber to the side where the substrate holding portion is located during the at least one period. The fourth gas is preferably a gas different from oxygen and a gas having an allotrope different from oxygen.

[0030] The substrate processing method of the present invention preferably also includes the following steps: during the period of processing the substrate, exhausting the gas in the chamber from an exhaust pipe arranged at a position lower in the vertical direction than the substrate holding portion; and during at least one period, adjusting the flow rate of the gas so that the flow rate of the gas in the exhaust pipe is less than the flow rate of the gas in the exhaust pipe during the period of processing the substrate.

[0031] According to yet another aspect of the present invention, in a semiconductor manufacturing method, a semiconductor substrate held by a substrate holding portion in a chamber is processed to manufacture the processed semiconductor substrate, i.e., a semiconductor. The semiconductor manufacturing method includes the following steps: supplying a first gas from a top wall portion of the chamber to a side of the substrate holding portion surrounded by a side wall portion of the chamber; and supplying a second gas into the chamber during a period different from a period during which the step of supplying the first gas is performed. The second gas is a gas different from oxygen and different from an allotrope of oxygen. In the step of supplying the second gas, the second gas is supplied from a position vertically above the holding position of the semiconductor substrate by the substrate holding portion and horizontally outside the substrate holding portion.

[0032] Effects of the Invention

[0033] According to the present invention, it is possible to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method capable of suppressing oxidation of a substrate when the substrate is transported within a chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a plan view showing a substrate processing apparatus according to Embodiment 1 of the present invention.

[0035] Figure 2 This is a schematic cross-sectional view showing the processing device when the shielding member according to Embodiment 1 is located at the processing position.

[0036] Figure 3 This is a schematic cross-sectional view showing the processing device when the shielding member according to the first embodiment is located at the retracted position.

[0037] Figure 4 This is a flowchart showing a part of the substrate processing method according to the first embodiment.

[0038] Figure 5 This is a flowchart showing another part of the substrate processing method according to the first embodiment.

[0039] Figure 6 Yes means Figure 4 FIG. 1 is a flow chart of the oxygen concentration reduction process before the substrate is loaded.

[0040] Figure 7 Yes means Figure 5 FIG. 1 is a flow chart of the oxygen concentration reduction process before the substrate is unloaded.

[0041] Figure 8 This is a schematic cross-sectional view showing a processing device included in a substrate processing apparatus according to a modified example of the first embodiment.

[0042] Fig. 9It is a perspective view showing a substrate transport guide according to a modified example of the first embodiment.

[0043] Fig.10 This is a schematic cross-sectional view showing a processing device included in a substrate processing apparatus according to a second embodiment of the present invention.

[0044] Fig.11 This is a flowchart showing a portion of the substrate processing method according to the second embodiment.

[0045] Fig.12 This is a flowchart showing another part of the substrate processing method according to the second embodiment.

[0046] Fig.13 Yes means Fig.11 FIG. 1 is a flow chart of the oxygen concentration reduction process before the substrate is loaded.

[0047] Fig.14 Yes means Fig.12 FIG. 1 is a flow chart of the oxygen concentration reduction process before the substrate is unloaded.

[0048] Explanation of symbols

[0049] 100, 100A, 100B: substrate processing device

[0050] 1. 1A, 1B: Substrate processing device (processing device)

[0051] 3: Chamber

[0052] 3a: Side wall

[0053] 3b: Top wall

[0054] 3c: Bottom wall

[0055] 3e: Opening

[0056] 5: Spin chuck (substrate holding part)

[0057] 7: Spin axis

[0058] 8: Spin motor

[0059] 9: Fluid supply unit

[0060] 11: Unit lifting mechanism

[0061] 12: Unit rotation mechanism

[0062] 13: First gas supply unit

[0063] 13a: Supply port

[0064] 13b: Inhalation port

[0065] 15: Opening and closing components

[0066] 17: Component moving mechanism

[0067] 19: Exhaust pipe

[0068] 21: Exhaust adjustment unit

[0069] 23: Protection Department

[0070] 25: Protection department moving mechanism

[0071] 27: Baffle

[0072] 29: Baffle moving mechanism

[0073] 30: Flow tube

[0074] 41: Second gas supply unit

[0075] 41a: Air supply port

[0076] 41b: Ventilation holes

[0077] 42: Substrate handling guide

[0078] 51: Chuck component

[0079] 53: Spinning Base

[0080] 61: Mobile Department

[0081] 91: Blocking components

[0082] 91a: Circular plate

[0083] 91b: Peripheral wall

[0084] 93: Axis

[0085] 131: Fan

[0086] 133: Filter

[0087] 421: Inner Space

[0088] 611: Arm

[0089] 613: Rotation axis

[0090] 615: Mobile Mechanism

[0091] AX: Axis of rotation

[0092] C: Substrate container

[0093] CR: Carrying robot

[0094] IR: Indexing Robot

[0095] GA: Gas

[0096] GA1: First Gas

[0097] GA2: Second Gas

[0098] GA3: Third Gas

[0099] GA4: The Fourth Gas

[0100] HD: Horizontal

[0101] HL: Hold Position

[0102] N1: Third gas supply unit

[0103] N2: Processing liquid supply unit

[0104] N3: Flushing liquid supply unit

[0105] P1~P7: Piping

[0106] PA: Porting path

[0107] PS: Handover Department

[0108] RV: Required Location

[0109] S1~S23, S51~S69, S101~S106, S161~S166, S511~S515, S651~S656: Process

[0110] U1: Index unit

[0111] U2: Processing Unit

[0112] U3: Control device

[0113] U31: Control Department

[0114] U32: Storage

[0115] V1~V7:Valve

[0116] VD: vertical direction

[0117] W: substrate DETAILED DESCRIPTION

[0118] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. In addition, in the drawings, the same reference symbols are marked for the same or equivalent parts and the description is not repeated. Furthermore, in an embodiment of the present invention, the X-axis, the Y-axis and the Z-axis are orthogonal to each other, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. Furthermore, "looking down" means observing the object from the vertical direction. In addition, in order to simplify the drawings, the oblique lines representing the cross-sections are appropriately omitted in the drawings.

[0119] (Implementation Method 1)

[0120] Reference Figure 1 to Figure 7 , a substrate processing apparatus 100 according to a first embodiment of the present invention is described. The substrate processing apparatus 100 processes a substrate W. The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. The substrate W is, for example, roughly disk-shaped.

[0121] First, refer to Figure 1 The substrate processing apparatus 100 will be described. Figure 1 is a schematic plan view showing the substrate processing apparatus 100. Figure 1 As shown, the substrate processing device 100 includes an indexer unit U1, a processing unit U2 and a control device U3. The control device U3 controls the indexer unit U1 and the processing unit U2. The control device U3 is, for example, a computer. The indexer unit U1 includes a plurality of substrate containers C and an indexer robot IR. The processing unit U2 includes a plurality of processing devices 1, a transport robot CR and a handover portion PS. The processing unit U2 may also include one processing device 1.

[0122] The substrate containers C respectively store a plurality of substrates W in a stacked manner. The index robot IR takes out an unprocessed substrate W from any one of the plurality of substrate containers C and delivers the substrate W to the interface PS. Then, the interface PS places the substrate W taken out from the substrate container C. The transport robot CR receives the unprocessed substrate W from the interface PS and carries the substrate W into any one of the plurality of processing devices 1.

[0123] Next, the processing apparatus 1 processes the unprocessed substrate W. The processing apparatus 1 is a single-wafer type that processes the substrates W one by one. In the first embodiment, the processing apparatus 1 processes the substrates W using a processing liquid.

[0124] After being processed by the processing device 1, the transport robot CR takes out the processed substrate W from the processing device 1 and delivers the substrate W to the delivery portion PS. Then, the delivery portion PS places the substrate W processed by the processing device 1. The index robot IR receives the processed substrate W from the delivery portion PS and stores the substrate W in any one of the plurality of substrate containers C.

[0125] Secondly, refer to Figure 2 , describing the processing device 1. Figure 2 is a schematic cross-sectional view showing the processing device 1. Figure 2 As shown, the processing apparatus 1 processes the substrate W by supplying a processing liquid to the substrate W while rotating the substrate W.

[0126] The processing device 1 includes a chamber 3, a spin chuck 5, a spin axis 7, a spin motor 8, a fluid supply unit 9, a unit lifting mechanism 11, a unit rotating mechanism 12, a first gas supply part 13, an opening and closing component 15, a component moving mechanism 17, an exhaust pipe 19, an exhaust adjustment part 21, multiple guards 23, multiple guard moving mechanisms 25, a baffle 27, a baffle moving mechanism 29, a flow tube 30, a second gas supply part 41, a piping P1, a piping P2, a piping P3, a piping P4, a piping P5, a valve V1, a valve V2, a valve V3, a valve V4 and a valve V5.

[0127] The chamber 3 has a substantially box shape. The chamber 3 accommodates the spin chuck 5, the spin shaft 7, the spin motor 8, the fluid supply unit 9, the unit lifting mechanism 11, the unit rotating mechanism 12, the plurality of guards 23, the plurality of guard moving mechanisms 25, the flow tube 30, a portion of the pipe P1, a portion of the pipe P2, a portion of the pipe P3, and a portion of the pipe P5. The chamber 3 may accommodate the valve V1, the valve V2, the valve V3, and the valve V5, or may not accommodate the valve V1, the valve V2, the valve V3, and the valve V5.

[0128] Specifically, the chamber 3 includes a side wall portion 3a, a top wall portion 3b, and a bottom wall portion 3c. The side wall portion 3a has a substantially square cylindrical shape and is disposed around the spin chuck 5. Specifically, the side wall portion 3a surrounds the spin chuck 5 in the circumferential direction around the rotation axis AX. Therefore, the side wall portion 3a is located at a position further outward in the horizontal direction HD than the spin chuck 5. The top wall portion 3b is substantially flat and is located above the spin chuck 5. Specifically, the top wall portion 3b is located at a position further upward in the direction of the rotation axis AX than the spin chuck 5. Therefore, the top wall portion 3b is located at a position further upward in the vertical direction VD than the spin chuck 5. The bottom wall portion 3c is substantially flat and is located below the spin chuck 5.

[0129] The first gas supply unit 13 is disposed on the top wall 3b. The first gas supply unit 13 supplies the first gas GA1 toward the lower side in the vertical direction VD. That is, the first gas supply unit 13 supplies the first gas GA1 toward the side where the spin chuck 5 is located. In the first embodiment, the first gas GA1 is air.

[0130] Specifically, the first gas supply unit 13 includes a supply port 13a and an air suction port 13b. The supply port 13a is an opening for supplying the first gas GA1 toward the side where the spin chuck 5 is located. The air suction port 13b is an opening for sucking the first gas GA1 from the outside of the chamber 3. The first gas supply unit 13 sucks the first gas GA1 from the air suction port 13b and delivers the first gas GA1 from the supply port 13a.

[0131] The first gas supply unit 13 includes a fan 131 and a filter 133. The filter 133 filters the first gas GA1. The fan 131 inhales the first gas GA1 from the air inlet 13b, and sends out the first gas GA1 filtered by the filter 133 from the supply port 13a. At this time, the first gas GA1 is, for example, clean air. The first gas supply unit 13 is, for example, a fan filter unit (FFU).

[0132] The opening and closing member 15 opens or closes the air inlet 13b. Figure 2 In the embodiment, the opening and closing member 15 opens the air inlet 13b. Therefore, the first gas supply unit 13 can suck the first gas GA1 from the air inlet 13b and send the first gas GA1 from the supply port 13a. The opening and closing member 15 has a substantially flat plate shape, for example.

[0133] The member moving mechanism 17 moves the opening and closing member 15 between an open position and a closed position. The open position indicates a position where the opening and closing member 15 opens the air inlet 13b. Figure 2 In the embodiment, the opening and closing member 15 is in the open position. The closed position indicates a position where the opening and closing member 15 blocks the air inlet 13b ( Figure 3 In Embodiment 1, the member moving mechanism 17 raises or lowers the opening and closing member 15 between the open position and the closed position. The member moving mechanism 17 includes, for example, a cylinder and a drive mechanism for driving the cylinder.

[0134] The second gas supply unit 41 supplies the second gas GA2 into the chamber 3. The second gas supply unit 41 may also include, for example, a fan and / or a nozzle. The second gas GA2 is a gas different from oxygen and different from the allotrope of oxygen. The second gas GA2 is, for example, an inert gas. The inert gas is, for example, nitrogen. In embodiment 1, the second gas GA2 is nitrogen. Specifically, the second gas supply unit 41 includes an air supply port 41a for supplying the second gas GA2 into the chamber 3. The air supply port 41a includes, for example, an odd number of openings, a plurality of openings, an odd number of holes, or a plurality of holes. As long as the second gas GA2 can pass through, the shapes of the openings and holes, and the sizes of the openings and holes are not particularly limited. The details of the second gas supply unit 41 will be described later.

[0135] The pipe P5 supplies the second gas GA2 to the second gas supply unit 41. The valve V5 switches between supply start and supply stop of the second gas GA2 to the second gas supply unit 41. When the valve V5 is opened, the second gas GA2 is supplied to the second gas supply unit 41, and the second gas supply unit 41 supplies the second gas GA2 into the chamber 3.

[0136] The spin chuck 5 holds the substrate W. Then, the spin chuck 5 rotates while holding the substrate W. Specifically, the spin chuck 5 rotates the substrate W around the rotation axis AX of the spin chuck 5 while holding the substrate W horizontally in the chamber 3. The spin chuck 5 is an example of a "substrate holding unit".

[0137] The spin chuck 5 includes a plurality of chuck members 51 and a spin base 53. The plurality of chuck members 51 are provided on the spin base 53. The plurality of chuck members 51 hold the substrate W in a horizontal posture. The spin base 53 is substantially disk-shaped and supports the plurality of chuck members 51 in a horizontal posture.

[0138] The spin shaft 7 is fixed to the spin base 53. Furthermore, the spin shaft 7 is fixed to the driving shaft of the spin motor 8. Furthermore, the spin motor 8 rotates the spin base 53 around the rotation axis AX by rotating the spin shaft 7. As a result, the substrate W held by the plurality of chuck members 51 provided on the spin base 53 rotates around the rotation axis AX.

[0139] The fluid supply unit 9 supplies the fluid. The fluid supply unit 9 is located above the spin chuck 5. Specifically, the fluid supply unit 9 includes a shielding member 91, a support shaft 93, a third gas supply part N1, a processing liquid supply part N2, and a rinse liquid supply part N3.

[0140] The shielding member 91 has a roughly disc shape. The outer diameter of the shielding member 91 is larger than the outer diameter of the substrate W. The shielding member 91 is configured in such a way that the central axis of the shielding member 91 is located on the rotation axis AX of the spin chuck 5. The shielding member 91 is located above the spin chuck 5. Specifically, the shielding member 91 includes a circular plate portion 91a and a peripheral wall portion 91b. The circular plate portion 91a has a roughly disc shape and is held in a horizontal posture by the support shaft 93. The peripheral wall portion 91b has a roughly cylindrical shape and extends downward from the outer edge of the circular plate portion 91a. In addition, the shielding member 91 may not include the peripheral wall portion 91b. In this case, the outer diameter of the shielding member 91 is roughly the same as the outer diameter of the substrate W.

[0141] The shielding member 91 rises or falls between the processing position and the retreat position. The processing position indicates a position where the shielding member 91 falls and is arranged to face the surface of the substrate W with a gap therebetween. Specifically, the processing position indicates a position where the shielding member 91 faces the surface of the substrate W in the vertical direction VD while approaching the surface of the substrate W with a gap therebetween. Figure 2 , the shielding member 91 is located at the processing position.

[0142] The shielding member 91 covers the upper part of the surface of the substrate W and shields the upper part of the surface of the substrate W at the processing position. That is, the shielding member 91 shields the upper part of the surface of the substrate W from the gas in the chamber 3 at the processing position. In addition, the shielding member 91 surrounds the outer edge of the substrate W at the processing position. Specifically, the circular plate portion 91a faces the surface of the substrate W in the vertical direction VD at the processing position. The peripheral wall portion 91b faces the outer edge of the substrate W in the horizontal direction HD at the processing position.

[0143] The retreat position indicates a position where the shielding member 91 is raised and separated from the surface of the substrate W ( Figure 3 ) Specifically, the retreat position indicates a position that is above the processing position in the vertical direction VD and at which the shielding member 91 is separated from the processing position.

[0144] The unit lifting mechanism 11 supports the fluid supply unit 9 and raises or lowers the fluid supply unit 9 between the processing position and the retreat position. That is, the unit lifting mechanism 11 raises or lowers the shielding member 91 between the processing position and the retreat position. The unit lifting mechanism 11 includes, for example, a ball screw mechanism and a lifting motor that provides driving force to the ball screw mechanism. The lifting motor is, for example, a servo motor.

[0145] The unit rotating mechanism 12 supports the fluid supply unit 9 and rotates the fluid supply unit 9. That is, the unit rotating mechanism 12 rotates the shielding member 91. Specifically, the unit rotating mechanism 12 rotates the fluid supply unit 9 in the processing position. That is, the unit rotating mechanism 12 rotates the shielding member 91 in the processing position. The unit rotating mechanism 12 includes, for example, a motor and a transmission mechanism that transmits the rotation of the motor to the fluid supply unit 9.

[0146] The third gas supply unit N1 is disposed at the shielding member 91 and the support shaft 93. Specifically, the third gas supply unit N1 is disposed inside the shielding member 91 and the support shaft 93. The third gas supply unit N1 supplies the third gas GA3 toward the bottom of the shielding member 91. The third gas GA3 is a gas different from oxygen and different from an allotrope of oxygen. The third gas GA3 is, for example, an inert gas. The inert gas is, for example, nitrogen. In Embodiment 1, the third gas GA3 is nitrogen.

[0147] The third gas supply part N1 includes, for example, a nozzle. The front end of the nozzle is exposed from the lower surface of the shielding member 91. The third gas supply part N1 is connected to the pipe P1. The pipe P1 supplies the third gas GA3 to the third gas supply part N1. The valve V1 switches the supply start and supply stop of the third gas GA3 to the third gas supply part N1. When the valve V1 is opened, the third gas GA3 is supplied to the third gas supply part N1, and the third gas supply part N1 supplies the third gas GA3 toward the bottom of the shielding member 91.

[0148] The processing liquid supply part N2 is arranged inside the shielding member 91 and the support shaft 93. The processing liquid supply part N2 supplies the processing liquid toward the bottom of the shielding member 91. The processing liquid supply part N2 includes, for example, a nozzle. The front end of the nozzle is exposed from the lower surface of the shielding member 91. The processing liquid supply part N2 is connected to the piping P2. The piping P2 supplies the processing liquid to the processing liquid supply part N2. The valve V2 switches the supply start and stop of the processing liquid to the processing liquid supply part N2. When the valve V2 is opened, the processing liquid is supplied to the processing liquid supply part N2, and the processing liquid supply part N2 supplies the processing liquid toward the bottom of the shielding member 91. Specifically, the processing liquid supply part N2 supplies the processing liquid toward the substrate W at the processing position.

[0149] The treatment liquid is, for example, a chemical liquid. The chemical liquid is, for example, hydrofluoric acid (HF), hydrofluoric nitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, hydrofluoric acid ethylene glycol (HFEG) (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, dilute hydrofluoric acid (DHF), ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid), organic base (e.g., tetramethylammonium hydroxide (TMAH)), sulfuric acid peroxide water mixture (SPM), ammonia peroxide water mixture (SC1), hydrochloric acid peroxide water mixture (SC2), surfactant or preservative. In addition, the type of the treatment liquid is not particularly limited as long as it can treat the substrate W.

[0150] The rinsing liquid supply part N3 is arranged inside the shielding member 91 and the support shaft 93. The rinsing liquid supply part N3 supplies rinsing liquid toward the bottom of the shielding member 91. The rinsing liquid supply part N3 includes, for example, a nozzle. The front end of the nozzle is exposed from the lower surface of the shielding member 91. The rinsing liquid supply part N3 is connected to the piping P3. The piping P3 supplies rinsing liquid to the rinsing liquid supply part N3. The valve V3 switches the supply start and stop of the rinsing liquid to the rinsing liquid supply part N3. When the valve V3 is opened, the rinsing liquid is supplied to the rinsing liquid supply part N3, and the rinsing liquid supply part N3 supplies the rinsing liquid toward the bottom of the shielding member 91. Specifically, the rinsing liquid supply part N3 supplies the rinsing liquid toward the substrate W at the processing position.

[0151] The rinse liquid is, for example, deionized water, carbonated water, electrolyzed ionized water, hydrogen-rich water, ozone water, or diluted hydrochloric acid water (eg, about 10 ppm to 100 ppm).

[0152] Each of the plurality of guards 23 has a substantially cylindrical shape and receives the processing liquid or the rinse liquid discharged from the substrate W.

[0153] The plurality of guard moving mechanisms 25 are respectively configured to correspond to the plurality of guards 23. The guard moving mechanism 25 causes the guard 23 to rise or fall between a liquid receiving position and a retreat position. The liquid receiving position indicates a position when the guard 23 rises and the upper end of the guard 23 is located at a position higher than the substrate W in the vertical direction VD. The retreat position indicates a position when the guard 23 falls and the upper end of the guard 23 is located at a position lower than the substrate W in the vertical direction VD. The guard moving mechanism 25 includes, for example, a ball screw mechanism and a motor that provides driving force to the ball screw mechanism.

[0154] The flow pipe 30 extends from the bottom wall portion 3c to the spin base 53. The flow pipe 30 supplies gas GA from below the substrate W toward the substrate W. The gas supply port of the flow pipe 30 is exposed on the upper surface of the spin base 53. The gas GA is a gas different from oxygen and a gas different from an allotrope of oxygen. The gas GA is, for example, an inert gas. The inert gas is, for example, nitrogen. In the first embodiment, the gas GA is nitrogen.

[0155] The pipe P4 supplies gas GA to the flow pipe 30. The valve V4 switches between supply start and stop of gas GA to the flow pipe 30. When the valve V4 is opened, gas GA is supplied from the pipe P4 to the flow pipe 30, and the flow pipe 30 supplies gas GA toward the substrate W from below the substrate W.

[0156] The exhaust pipe 19 is arranged at a position lower than the spin chuck 5 in the vertical direction VD. For example, the exhaust pipe 19 is connected to the chamber 3 from the lower part of the side wall portion 3a. In addition, the exhaust pipe 19 may be connected to the chamber 3 from the bottom wall portion 3c. The gas in the chamber 3 is connected to the exhaust pipe 19. That is, the gas exhausted from the chamber 3 is connected to the exhaust pipe 19.

[0157] The exhaust gas regulating unit 21 is disposed in the exhaust pipe 19. The exhaust gas regulating unit 21 regulates the flow rate of the gas exhausted through the exhaust pipe 19. The exhaust gas regulating unit 21 includes, for example, a damper.

[0158] The side wall portion 3a of the chamber 3 includes an opening 3e. That is, the opening 3e is provided on the side wall portion 3a. The opening 3e can be opened and closed. Specifically, the baffle 27 is arranged on the side wall portion 3a. And the baffle 27 moves between a closed position blocking the opening 3e and an open position opening the opening 3e.

[0159] The shutter moving mechanism 29 is coupled to the shutter 27 to move the shutter 27 between the closed position and the open position. The shutter moving mechanism 29 includes, for example, an air cylinder and a driving mechanism for driving the air cylinder.

[0160] Transport robot CR( Figure 1 ) carries the substrate W into the chamber 3 through the opening 3e. Specifically, the transport robot CR carries the substrate W to the spin chuck 5 in the chamber 3 through the opening 3e. And, the transport robot CR carries the substrate W out of the chamber 3 through the opening 3e. Specifically, the transport robot CR carries the substrate W from the spin chuck 5 in the chamber 3 to the outside of the chamber 3 through the opening 3e. Therefore, the chamber 3 includes a transport path PA for the substrate W. The transport path PA represents a path when the substrate W is transported through the opening 3e. In the first embodiment, the transport path PA is along the horizontal direction HD.

[0161] For example, the transport path PA represents the area between the opening 3e and the predetermined position RV ( Figure 3 ) between the spin chuck 5 and the spin chuck 5. The predetermined position RV indicates a position directly above the spin chuck 5 and a position where the hand of the transfer robot CR does not contact the spin chuck 5 when moving in the horizontal direction HD. Figure 3 In FIG. 1 , the substrate W located at a predetermined position RV is indicated by a two-dot chain line.

[0162] The predetermined position RV indicates, for example, a substrate delivery position. The substrate delivery position indicates a position above the spin chuck 5 and between the hand of the transport robot CR and a lifter (not shown) where the substrate W is delivered. The lifter supports the substrate W and ascends or descends.

[0163] For example, the hand of the transport robot CR transports the substrate W to the substrate delivery position through the opening 3e and the transport path PA. Then, the elevator receives the substrate W located at the substrate delivery position. Then, the elevator lowers the substrate W from the substrate delivery position and places the substrate W on the spin chuck 5 (specifically, a plurality of chuck members 51). Then, the elevator further descends.

[0164] For example, the lifter receives the substrate W from the spin chuck 5 (specifically, the plurality of chuck members 51) and raises the substrate W to the substrate delivery position. Then, the hand of the transport robot CR receives the substrate W at the substrate delivery position. The lifter descends. Then, the hand of the transport robot CR moves the substrate W out of the chamber 3 from the substrate delivery position through the transport path PA and the opening 3e.

[0165] The control device U3 controls the processing device 1. Specifically, the control device U3 includes a control unit U31 and a storage unit U32. The control unit U31 includes a processor such as a central processing unit (CPU). The storage unit U32 includes a storage device that stores data and computer programs. The storage device includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and / or a hard disk drive. The storage device may also include a removable medium. The processor of the control unit U31 executes the computer program stored in the storage device of the storage unit U32 to control the processing device 1.

[0166] That is, the control unit U31 controls the spin chuck 5, the spin motor 8, the fluid supply unit 9, the unit lifting mechanism 11, the unit rotating mechanism 12, the first gas supply unit 13, the opening and closing component 15, the component moving mechanism 17, the exhaust adjustment unit 21, the multiple protection parts 23, the multiple protection part moving mechanisms 25, the baffle 27, the baffle moving mechanism 29, the second gas supply unit 41 and the valves V1 to V5.

[0167] For example, the control unit U31 controls the second gas supply unit 41 via the valve V5. For example, the control unit U31 controls the third gas supply unit N1 of the fluid supply unit 9 via the valve V1. For example, the control unit U31 controls the shielding member 91 of the fluid supply unit 9 via the unit lifting mechanism 11 and the unit rotating mechanism 12. For example, the control unit U31 controls the opening and closing member 15 via the member moving mechanism 17. For example, the control unit U31 controls the baffle 27 via the baffle moving mechanism 29.

[0168] Secondly, refer to Figure 2 and Figure 3, describing the gas supply mode of the substrate processing apparatus 100. The so-called gas supply mode refers to a mode in which gas is supplied into the chamber 3. Specifically, the processing apparatus 1 has a gas supply mode. The gas supply mode includes a first gas supply mode and a second gas supply mode. The first gas supply mode is a mode in which at least the first gas supply unit 13 supplies the first gas GA1 into the chamber 3. The second gas supply mode is a mode in which at least the second gas supply unit 41 supplies the second gas GA2 into the chamber 3.

[0169] First, refer to Figure 2 , explaining the first gas supply mode. Hereinafter, the period during which the substrate W is processed is sometimes referred to as "substrate processing period T1". The substrate processing period T1 includes not only the period during which the substrate W is processed by the processing liquid, but may also include the period before the period during which the substrate W is processed by the processing liquid, and / or the period after the period during which the substrate W is processed by the processing liquid. That is, the substrate processing period T1 includes the period during which the substrate W is processed by the processing liquid, does not include the period before the substrate W is moved into the chamber 3, and does not include the period after a series of processes on the substrate W are completed. In other words, the substrate processing period T1 represents the period during which a series of processes are performed on the substrate W.

[0170] like Figure 2 As shown, in the substrate processing period T1 , the control unit U31 sets the gas supply mode of the substrate processing apparatus 100 (specifically, the processing apparatus 1 ) to the first gas supply mode, and controls each component of the processing apparatus 1 .

[0171] That is, in the first gas supply mode, the baffle 27 blocks the opening 3e. The opening and closing member 15 opens the air intake port 13b. Therefore, the first gas supply unit 13 supplies the first gas GA1 toward the lower side in the vertical direction VD. The exhaust adjustment unit 21 fully opens the flow path of the exhaust pipe 19. The shielding member 91 is located at the processing position. The third gas supply unit N1 supplies the third gas GA3 toward the substrate W. Therefore, the gas containing oxygen is discharged from between the substrate W and the shielding member 91 by the third gas GA3. Moreover, the shielding member 91 shields the upper and side sides of the substrate W, so the space between the substrate W and the shielding member 91 is filled with the third gas GA3. Therefore, the oxygen concentration in the ambient gas in contact with the substrate W can be reduced. In addition, the flow pipe 30 supplies the gas GA to the space between the substrate W and the spin base 53. Therefore, the gas containing oxygen is discharged from between the substrate W and the spin base 53 by the gas GA. As a result, the oxygen concentration in the ambient gas in contact with the substrate W can be further reduced.

[0172] Furthermore, in the first gas supply mode, the valve V5 is closed, and thus the second gas supply unit 41 does not supply the second gas GA2 into the chamber 3 .

[0173] Above, as reference Figure 2 As described, according to Embodiment 1, the control unit U31 controls the first gas supply unit 13 to supply the first gas GA1 during the substrate processing period T1. Therefore, the first gas supply unit 13 supplies the first gas GA1 toward the lower side in the vertical direction VD. In addition, the control unit U31 controls the second gas supply unit 41 via the valve V5 so as not to supply the second gas GA2. Therefore, the second gas supply unit 41 does not supply the second gas GA2. As a result, according to Embodiment 1, during the substrate processing period T1, a downflow formed by the first gas GA1 can be effectively generated in the chamber 3.

[0174] Furthermore, according to the first embodiment, the control unit U31 controls the opening and closing member 15 via the member moving mechanism 17 during the substrate processing period T1 so that the opening and closing member 15 opens the air inlet 13b. Therefore, the opening and closing member 15 opens the air inlet 13b. As a result, the downward flow formed by the first gas GA1 can be effectively generated in the chamber 3 during the substrate processing period T1 with a simple configuration.

[0175] Furthermore, according to Embodiment 1, the control unit U31 controls the exhaust adjustment unit 21 during the substrate processing period T1 so that the gas is exhausted through the exhaust pipe 19. Therefore, the exhaust adjustment unit 21 opens the flow path of the exhaust pipe 19 so that the gas is exhausted through the exhaust pipe 19. As a result, the first gas GA1 supplied by the first gas supply unit 13 is effectively exhausted from the exhaust pipe 19, and the downward flow formed by the first gas GA1 can be further effectively generated during the substrate processing period T1. In particular, by fully opening the flow path of the exhaust pipe 19 by the exhaust adjustment unit 21, the downward flow formed by the first gas GA1 can be further effectively generated.

[0176] In addition, according to Embodiment 1, the control unit U31 controls the shielding member 91 via the unit lifting mechanism 11 during the substrate processing period T1 so that the shielding member 91 is located at the processing position. Therefore, the shielding member 91 is located at the processing position. Moreover, the control unit U31 controls the third gas supply unit N1 via the valve V1 so that the third gas supply unit N1 supplies the third gas GA3. Therefore, the third gas supply unit N1 supplies the third gas GA3 between the shielding member 91 and the substrate W. As a result, the space between the substrate W and the shielding member 91 is filled with the third gas GA3, thereby reducing the oxygen concentration in the ambient gas in contact with the substrate W. Therefore, it is possible to suppress oxidation of the substrate W during the processing of the substrate W in the chamber 3.

[0177] Secondly, refer to Figure 3, explaining the second gas supply mode. Hereinafter, the period after the processing of the substrate W and before the substrate W is carried out from the chamber 3 is sometimes referred to as the "pre-substrate carry-out period T21". Specifically, the pre-substrate carry-out period T21 represents the period after a series of processing is performed on the substrate W and before the substrate W is carried out from the chamber 3. The "series of processing" includes the processing of the substrate W using the processing liquid. In addition, the period before the substrate W is carried into the chamber 3 is sometimes referred to as the "pre-substrate carry-in period T22".

[0178] Figure 3 1 is a schematic cross-sectional view showing the processing device 1 when the shielding member 91 is in the retracted position. Figure 3 As shown, in at least one of the period T21 before substrate carry-out and the period T22 before substrate carry-in (hereinafter referred to as "period T2"), the control unit U31 sets the gas supply mode of the substrate processing apparatus 100 (specifically, the processing apparatus 1) to the second gas supply mode, and controls each component of the processing apparatus 1. In the following examples, unless otherwise specified, the control unit U31 sets the gas supply mode to the second gas supply mode in both the period T21 before substrate carry-out and the period T22 before substrate carry-in.

[0179] That is, in the second gas supply mode, the baffle 27 blocks the opening 3e. The opening and closing member 15 blocks the air intake port 13b. Therefore, the first gas supply unit 13 does not supply the first gas GA1. The exhaust adjustment unit 21 adjusts the flow rate of the gas in the exhaust pipe 19 so that it is less than the flow rate of the gas in the first gas supply mode. The shielding member 91 is located at the retreat position. The third gas supply unit N1 supplies the third gas GA3 toward the bottom of the shielding member 91. Therefore, the gas containing oxygen flows in the chamber 3 through the third gas GA3, moves toward the exhaust pipe 19 and is discharged. As a result, the oxygen concentration in the chamber 3 can be reduced, and the oxidation of the substrate W before and after the processing can be suppressed. In addition, the flow pipe 30 supplies the gas GA toward the top of the spin base 53. Therefore, the gas containing oxygen flows in the chamber 3 through the gas GA, moves toward the exhaust pipe 19 and is discharged. As a result, the oxygen concentration in the chamber 3 can be further reduced, and the oxidation of the substrate W before and after the processing can be further suppressed.

[0180] Furthermore, in the second gas supply mode, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a. Therefore, according to Embodiment 1, the gas containing oxygen flows through the second gas GA2 in the chamber 3, moves toward the exhaust pipe 19, and is exhausted. As a result, the oxygen concentration in the chamber 3 can be further reduced, and oxidation of the substrate W before and after processing can be further suppressed.

[0181] Here, if Figure 3 As shown, in Embodiment 1, the second gas supply unit 41 is located above the holding position HL of the substrate W by the spin chuck 5 in the vertical direction VD, and is located outside the spin chuck 5 in the horizontal direction HD. Specifically, the air supply port 41a of the second gas supply unit 41 is located above the holding position HL of the substrate W in the vertical direction VD, and is located outside the spin chuck 5 in the horizontal direction HD. Therefore, the gas containing oxygen flows efficiently in the chamber 3 through the second gas GA2 supplied from the air supply port 41a, moves toward the exhaust pipe 19, and is effectively exhausted. As a result, according to Embodiment 1, the oxygen concentration in the chamber 3 can be further reduced, and oxidation of the substrate W before and after processing can be further suppressed.

[0182] That is, during the period T21 before the substrate is carried out, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a, so that when the substrate W is carried out from the chamber 3, the oxygen concentration in the chamber 3 can be reduced. As a result, according to the first embodiment, the oxidation of the substrate W can be suppressed when the substrate W in the chamber 3 is transported.

[0183] Furthermore, during the period T22 before the substrate is carried in, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a, so that when the substrate W is carried in the chamber 3, the oxygen concentration in the chamber 3 can be reduced. As a result, according to the first embodiment, oxidation of the substrate W can be suppressed when the substrate W in the chamber 3 is transported.

[0184] In particular, in Embodiment 1, the second gas supply unit 41 is disposed above the transport path PA of the substrate W. Specifically, the air supply port 41a of the second gas supply unit 41 is disposed above the transport path PA of the substrate W. Therefore, the gas containing oxygen efficiently flows in the chamber 3 through the second gas GA2 supplied from the air supply port 41a, moves toward the exhaust pipe 19, and is discharged.

[0185] When the substrate W is carried into the chamber 3, the transport path PA from the time the substrate W is carried into the chamber 3 to the time the substrate W is held on the spin chuck 5 must be maintained in a low oxygen state. In addition, when the substrate W is carried out of the chamber 3, the transport path PA from the time the substrate W is released from the spin chuck 5 to the time the substrate W is carried out of the chamber 3 must be maintained in a low oxygen state.

[0186] At this time, the inventors of the present application discovered that, instead of supplying an inert gas or the like in a downward flow toward the transport path PA, on the contrary, supplying the second gas GA2 above the transport path PA in a direction away from the transport path PA, for example, in an upward flow (upflow), can further efficiently reduce the oxygen concentration in the chamber 3 including the transport path PA.

[0187] That is, as in the operation of the air supply port 41a of the second gas supply unit 41 in Embodiment 1, the second gas GA2 is supplied above the transport path PA in a direction away from the transport path PA, for example, flowing upward, so that the second gas GA2 flows along the top wall 3b of the chamber 3, and then flows downward along the side wall 3a, and then is discharged from the exhaust pipe 19, so that the oxygen concentration inside the chamber 3 including the transport path PA can be achieved in a shorter time and at a low oxygen concentration. As a result, according to Embodiment 1, the oxygen concentration in the chamber 3 can be further reduced, and the oxidation of the substrate W before and after processing can be further suppressed.

[0188] The details of the mechanism as to why the oxygen concentration in the transport path PA can be reduced more efficiently by supplying the second gas GA2 in a direction away from the transport path PA instead of supplying an inert gas or the like toward the transport path PA of the substrate W is not clear, but as some assumptions, it can be considered as follows: For example, in terms of achieving a low oxygen state in the chamber 3 at a high level as envisioned in the present invention, considering that oxygen gas will enter not only from the transport path PA but also from the periphery of the transport path PA, it is necessary to form a stable flow of the flow rate of the fluid in the chamber 3, and these are appropriately achieved by the method exemplified in Implementation Example 1.

[0189] Specifically, according to Embodiment 1, the second gas supply unit 41 supplies the second gas GA2 in the direction opposite to the transport path PA through the air supply port 41a. That is, the second gas supply unit 41 supplies the second gas GA2 toward the top wall 3b through the air supply port 41a. Therefore, a portion of the second gas GA2 flows from the air supply port 41a to the top wall 3b, and then is rebounded by the top wall 3b, and flows downward or obliquely downward from the top wall 3b. In addition, a portion of the second gas GA2 flows from the air supply port 41a to the top wall 3b, and then flows along the top wall 3b, and then reaches the side wall 3a. Then, a portion of the second gas GA2 that reaches the side wall 3a is rebounded by the side wall 3a, and a portion of the second gas GA2 that reaches the side wall 3a flows downward along the side wall 3a.

[0190] Therefore, by the flow of the second gas GA2 supplied toward the top wall portion 3b, the gas containing oxygen in the chamber 3 effectively flows in the chamber 3, moves toward the exhaust pipe 19, and is effectively exhausted. As a result, the oxygen concentration in the chamber 3 can be effectively reduced in a short time, and the oxidation of the substrate W before and after processing can be effectively suppressed. That is, the oxidation of the substrate W can be effectively suppressed in a short time when the substrate W in the chamber 3 is transported.

[0191] In addition, the second gas supply unit 41 may supply the second gas GA2 upward substantially in parallel with the vertical direction VD, or may supply the second gas GA2 obliquely upward.

[0192] Furthermore, in Embodiment 1, the control unit U31 controls the second gas supply unit 41 to supply the second gas GA2 in at least one period T2 of the period T21 before the substrate is carried out and the period T22 before the substrate is carried in. On the other hand, in at least one period T2, the control unit U31 controls the first gas supply unit 13 not to supply the first gas GA1. Therefore, in the second gas supply mode, the first gas supply unit 13 does not supply the first gas GA1 to the chamber 3. As a result, the flow of the first gas GA1 can suppress the obstruction of the discharge of the gas containing oxygen. Therefore, when the substrate W is transported, the oxygen concentration in the chamber 3 can be reduced in a shorter time.

[0193] In addition, in Embodiment 1, the control unit U31 controls the opening and closing member 15 via the member moving mechanism 17 during at least one period T2 of the substrate carrying-out period T21 and the substrate carrying-in period T22, so that the opening and closing member 15 blocks the air inlet 13b. Therefore, the opening and closing member 15 blocks the air inlet 13b. As a result, it is possible to suppress the flow of oxygen from the air inlet 13b into the chamber 3. Therefore, when the substrate W is transported, the oxygen concentration in the chamber 3 can be reduced in a shorter time.

[0194] In addition, in Embodiment 1, the control unit U31 controls the shielding member 91 via the unit lifting mechanism 11 in at least one period T2 of the substrate carrying-out period T21 and the substrate carrying-in period T22, so that the shielding member 91 is located in the retreat position. In addition, the control unit U31 controls the third gas supply unit N1 via the valve V1 in at least one period T2, so that the third gas supply unit N1 supplies the third gas GA3. Therefore, the third gas supply unit N1 supplies the third gas GA3 from the retreat position to the lower side in the vertical direction VD. As a result, the gas containing oxygen is moved toward the exhaust pipe 19 and is effectively exhausted. Therefore, the oxygen concentration in the chamber 3 can be further reduced, and the oxidation of the substrate W during the transportation of the substrate W can be further suppressed.

[0195] Furthermore, in Embodiment 1, the control unit U31 controls the exhaust regulating unit 21 in at least one period T2 of the period T21 before substrate carry-out and the period T22 before substrate carry-in, so that the flow rate of gas in the exhaust pipe 19 is less than the flow rate of gas in the exhaust pipe 19 during the substrate processing period T1. Therefore, the exhaust regulating unit 21 regulates the flow rate in the exhaust pipe 19 to be less than the flow rate when operating in the first gas supply mode in the second gas supply mode. That is, the exhaust pressure of the exhaust pipe 19 in the second gas supply mode is less than the exhaust pressure of the exhaust pipe 19 in the first gas supply mode. Therefore, it is possible to suppress the rapid discharge of the second gas GA2 from the exhaust pipe 19. As a result, the gas containing oxygen can be effectively discharged through the flow of the second gas GA2.

[0196] Secondly, refer to Figure 2 to Figure 7 Next, a substrate processing method according to Embodiment 1 will be described. The substrate processing method is performed by the substrate processing apparatus 100. In the substrate processing method, a substrate W held by the spin chuck 5 in the chamber 3 is processed. Figure 4 and Figure 5 This is a flowchart showing the substrate processing method according to the first embodiment. Figure 6 Yes means Figure 4 The flowchart of step S1 is shown. Step S1 shows the oxygen concentration reduction process before the substrate W is carried in. Figure 7 Yes means Figure 5 The flowchart of step S16 is shown in FIG. Step S16 shows the oxygen concentration reduction process before the substrate W is carried out.

[0197] like Figure 4 and Figure 5 As shown, the substrate processing method includes steps S1 to S23.

[0198] like Figure 3 and Figure 4 As shown in FIG. 1 , in step S1 , the substrate processing apparatus 100 performs an oxygen concentration reduction process before the substrate W is carried in. The oxygen concentration reduction process before the substrate W is carried in is a process for reducing the oxygen concentration in the chamber 3 before the substrate W is carried in. Figure 3 There is no substrate W in the chamber 3.

[0199] Specifically, if Figure 6 As shown, the oxygen concentration reduction process before the substrate W is carried in includes steps S101 to S106.

[0200] like Figure 3 and Figure 6As shown, in step S101, the control unit U31 controls the member moving mechanism 17 so that the opening and closing member 15 blocks the air inlet 13b. As a result, the opening and closing member 15 blocks the air inlet 13b. In particular, by executing step S101, the air inlet 13b is blocked during the period T22 before the substrate is carried in.

[0201] Next, in step S102, the control unit U31 controls the valve V5 so that the second gas supply unit 41 supplies the second gas GA2. As a result, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3. Specifically, in step S102, the second gas supply unit 41 is moved from the holding position HL ( Figure 3 ) is located at a position further up in the vertical direction VD and further outward in the horizontal direction HD than the spin chuck 5. In particular, in step S102, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 during a period different from the period of step S9 in which the first gas GA1 is supplied. Furthermore, in step S102, the second gas supply unit 41 supplies the second gas GA2 during a period T22 before the substrate is carried in.

[0202] Furthermore, in step S102, it is preferred that the second gas supply unit 41 supplies the second gas GA2 toward the top wall portion 3b. Furthermore, in step S102, it is preferred that the second gas supply unit 41 supplies the second gas GA2 toward the top wall portion 3b. Figure 3 )The second gas GA2 is supplied to a position further above.

[0203] In addition, the second gas supply unit 41 continues to supply the second gas GA2 unless the control unit U31 controls the valve V5 to stop supplying the second gas GA2.

[0204] Next, in step S103, the control unit U31 controls the valve V1 so that the third gas supply unit N1 supplies the third gas GA3. As a result, the third gas supply unit N1 supplies the third gas GA3 toward the bottom of the shielding member 91. By executing step S103, the third gas GA3 is supplied toward the bottom of the shielding member 91 during the period T21 before the substrate is carried out, the period T22 before the substrate is carried in, and the substrate processing period T1. In addition, as long as the control unit U31 does not control the valve V1 to stop supplying the third gas GA3, the third gas supply unit N1 continues to supply the third gas GA3. And, during the period T22 before the substrate is carried in, the shielding member 91 is located in the retreat position.

[0205] Next, in step S104, the control unit U31 controls the valve V4 to supply the gas GA through the flow tube 30. As a result, the flow tube 30 supplies the gas GA toward the top of the spin base 53. In addition, the flow tube 30 continues to supply the gas GA unless the control unit U31 controls the valve V4 to stop supplying the gas GA.

[0206] Next, in step S105, the control unit U31 controls the exhaust adjustment unit 21 to adjust the flow rate of the gas in the exhaust pipe 19 to be less than the flow rate of the gas in the substrate processing period T1. Specifically, the exhaust adjustment unit 21 makes the flow rate of the exhaust pipe 19 less than when it is fully opened and more than when it is fully closed. By executing step S105, the flow rate of the gas is adjusted in the period T22 before the substrate is carried in so that the flow rate of the gas in the exhaust pipe 19 is less than the flow rate of the gas in the exhaust pipe 19 in the substrate processing period T1.

[0207] Next, in step S106, the control unit U31 determines whether a first predetermined time has elapsed since the start of step S101. The first predetermined time indicates the time required for the oxygen concentration in the chamber 3 to reach a predetermined value or less. The predetermined value is, for example, 100 ppm.

[0208] When it is determined in step S106 that the first predetermined time has not elapsed (No in step S106 ), the process repeatedly executes step S106 until it is determined in step S106 that the first predetermined time has elapsed.

[0209] On the other hand, if it is determined in step S106 that the first predetermined time has elapsed (Yes in step S106), the oxygen concentration reduction process before the substrate W is carried in is completed and the process returns to step S106. Figure 4 Specifically, the process enters the main routine (mainroutine) shown in FIG. Figure 4 Step S2 shown.

[0210] like Figure 4 As shown, in step S2, the control unit U31 controls the shutter moving mechanism 29 so that the shutter 27 opens the opening 3e. As a result, the shutter 27 opens the opening 3e.

[0211] Next, in step S3 , the control unit U31 controls the transfer robot CR to carry the substrate W into the chamber 3 . As a result, the transfer robot CR carries the substrate W into the chamber 3 .

[0212] Next, in step S4, the control unit U31 controls the shutter moving mechanism 29 so that the shutter 27 blocks the opening 3e. As a result, the shutter 27 blocks the opening 3e.

[0213] Next, in step S5 , the control unit U31 controls the spin chuck 5 to hold the substrate W. As a result, the spin chuck 5 holds the substrate W.

[0214] Next, in step S6, the control unit U31 controls the unit lifting mechanism 11 to lower the shielding member 91. As a result, the shielding member 91 is lowered from the retreat position to the processing position. By executing step S6, the shielding member 91 is located at the processing position during the substrate processing period T1.

[0215] Next, in step S7, the control unit U31 controls the valve V5 so that the second gas supply unit 41 stops supplying the second gas GA2. As a result, the second gas supply unit 41 stops supplying the second gas GA2.

[0216] Secondly, if Figure 2 and Figure 4 As shown, in step S8, the control unit U31 controls the member moving mechanism 17 so that the opening and closing member 15 opens the air inlet 13b. As a result, the opening and closing member 15 opens the air inlet 13b. In particular, by executing step S8, the air inlet 13b is opened during the substrate processing period T1.

[0217] Next, in step S9, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 supplies the first gas GA1. As a result, the first gas supply unit 13 supplies the first gas GA1 toward the side where the spin chuck 5 is located. Specifically, in step S9, the first gas GA1 is supplied from the top wall portion 3b of the chamber 3 toward the side where the spin chuck 5 is located surrounded by the side wall portion 3a of the chamber 3 by the first gas supply unit 13. In particular, by executing step S9, the first gas GA1 is supplied during the substrate processing period T1.

[0218] In addition, unless the control unit U31 controls the first gas supply unit 13 to stop supplying the first gas GA1 , the first gas supply unit 13 continues to supply the first gas GA1 .

[0219] Next, in step S10, the control unit U31 controls the exhaust adjustment unit 21 to fully open the flow path of the exhaust pipe 19. As a result, the exhaust adjustment unit 21 fully opens the flow path of the exhaust pipe 19. By executing step S10, the gas in the chamber 3 is exhausted from the exhaust pipe 19 during the substrate processing period T1. Next, the processing enters Figure 5 Step S11 is shown.

[0220] like Figure 5As shown, in step S11, the control unit U31 controls the spin motor 8 so that the spin motor 8 drives the spin chuck 5 to start rotating the substrate W. As a result, the spin chuck 5 rotates and the substrate W rotates. In addition, the control unit U31 controls the unit rotating mechanism 12 so that the shielding member 91 rotates. As a result, the shielding member 91 rotates.

[0221] Next, in step S12, the control unit U31 controls the valve V2 so that the processing liquid supply unit N2 starts supplying the processing liquid toward the substrate W. As a result, the processing liquid supply unit N2 supplies the processing liquid toward the substrate W. Specifically, the processing liquid supply unit N2 supplies the processing liquid to the substrate W throughout the first predetermined period.

[0222] Next, in step S13, the control unit U31 controls the valve V3 so that the rinse liquid supply unit N3 supplies the rinse liquid toward the substrate W. As a result, the rinse liquid supply unit N3 supplies the rinse liquid toward the substrate W. Specifically, the rinse liquid supply unit N3 supplies the rinse liquid to the substrate W throughout the second predetermined period. As a result, the processing liquid on the substrate W is washed away by the rinse liquid, and the substrate W is cleaned.

[0223] Next, in step S14, the control unit U31 controls the spin motor 8 to accelerate the spin chuck 5 to a high rotation speed and maintain the rotation speed of the spin chuck 5 at a high rotation speed. As a result, the substrate W rotates at a high rotation speed, and the rinse liquid attached to the substrate W is shaken off, so that the substrate W is dried.

[0224] Next, in step S15, the control unit U31 controls the spin motor 8 so that the spin motor 8 stops the spin chuck 5 and stops the rotation of the substrate W. As a result, the spin chuck 5 stops and the substrate W stops. Furthermore, the control unit U31 controls the unit rotating mechanism 12 so that the shielding member 91 stops. As a result, the shielding member 91 stops.

[0225] Next, in step S16 , the substrate processing apparatus 100 performs an oxygen concentration reduction process before unloading the substrate W. The oxygen concentration reduction process before unloading the substrate W is a process for reducing the oxygen concentration in the chamber 3 after processing the substrate W and before unloading the substrate W from the chamber 3 .

[0226] like Figure 7 As shown, the oxygen concentration reduction process before the substrate W is carried out includes steps S161 to S166.

[0227] like Figure 3 and Figure 7As shown, in step S161, the control unit U31 controls the member moving mechanism 17 so that the opening and closing member 15 blocks the air inlet 13b. As a result, the opening and closing member 15 blocks the air inlet 13b. In particular, by executing step S161, the air inlet 13b is blocked during the period T21 before the substrate is carried out.

[0228] Next, in step S162, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 stops supplying the first gas GA1. As a result, the first gas supply unit 13 stops supplying the first gas GA1.

[0229] Next, in step S163, the control unit U31 controls the valve V5 so that the second gas supply unit 41 supplies the second gas GA2. As a result, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3. Other than this, step S163 is the same as step S102. However, in step S163, the second gas supply unit 41 supplies the second gas GA2 during the period T21 before the substrate is carried out.

[0230] In addition, the second gas supply unit 41 continues to supply the second gas GA2 unless the control unit U31 controls the valve V5 to stop supplying the second gas GA2.

[0231] Next, in step S164, the control unit U31 controls the exhaust adjustment unit 21 to adjust the flow rate of the gas in the exhaust pipe 19 to be less than the flow rate of the gas in the substrate processing period T1. Specifically, the exhaust adjustment unit 21 makes the flow rate of the exhaust pipe 19 less than when it is fully open and more than when it is fully closed. By executing step S164, the flow rate of the gas is adjusted in the period T21 before the substrate is carried out so that the flow rate of the gas in the exhaust pipe 19 is less than the flow rate of the gas in the exhaust pipe 19 in the substrate processing period T1.

[0232] Next, in step S165, the control unit U31 controls the unit lifting mechanism 11 to raise the shielding member 91. As a result, the shielding member 91 is raised from the processing position to the retreat position. In particular, by executing step S165, the shielding member 91 is located at the retreat position during the period T21 before the substrate is carried out.

[0233] Next, in step S166, the control unit U31 determines whether a second predetermined time has elapsed since the start of step S161. The second predetermined time indicates the time required for the oxygen concentration in the chamber 3 to reach a predetermined value or less. The predetermined value is, for example, 100 ppm.

[0234] When it is determined in step S166 that the second predetermined time has not elapsed (NO in step S166), the process repeatedly executes step S166 until it is determined in step S166 that the second predetermined time has elapsed.

[0235] On the other hand, when it is determined in step S166 that the second predetermined time has elapsed (YES in step S166), the oxygen concentration reduction process before the substrate W is carried out is completed and the process returns to step S166. Figure 5 Specifically, the process enters Figure 5 Step S17 is shown.

[0236] like Figure 5 As shown, in step S17 , the control unit U31 controls the spin chuck 5 to release the substrate W. As a result, the spin chuck 5 releases the substrate W.

[0237] Next, in step S18, the control unit U31 controls the shutter moving mechanism 29 so that the shutter 27 opens the opening 3e. As a result, the shutter 27 opens the opening 3e.

[0238] Next, in step S19 , the control unit U31 controls the transfer robot CR to carry out the substrate W from the chamber 3 . As a result, the transfer robot CR carries out the substrate W from the chamber 3 .

[0239] Next, in step S20, the control unit U31 controls the shutter moving mechanism 29 so that the shutter 27 blocks the opening 3e. As a result, the shutter 27 blocks the opening 3e.

[0240] Next, in step S21, the control unit U31 controls the valve V5 so that the second gas supply unit 41 stops supplying the second gas GA2. As a result, the second gas supply unit 41 stops supplying the second gas GA2.

[0241] Next, in step S22, the control unit U31 controls the valve V1 so that the third gas supply unit N1 stops supplying the third gas GA3. As a result, the third gas supply unit N1 stops supplying the third gas GA3.

[0242] Next, in step S23, the control unit U31 controls the valve V4 to stop supplying the gas GA from the flow pipe 30. As a result, the flow pipe 30 stops supplying the gas GA. Then, the processing by the substrate processing method is completed.

[0243] Above, as reference Figure 4 to Figure 7As described above, according to Embodiment 1, in the period T22 before substrate loading and the period T21 before substrate unloading, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a (step S1 and step S16). Therefore, according to Embodiment 1, the gas containing oxygen flows in the chamber 3 through the second gas GA2, moves toward the exhaust pipe 19, and is discharged. As a result, before and after the processing of the substrate W, the oxygen concentration in the chamber 3 can be effectively reduced, and the oxidation of the substrate W can be effectively suppressed when the substrate W in the chamber 3 is transported.

[0244] Furthermore, the substrate processing method of the first embodiment can be used in a semiconductor manufacturing method. That is, in the semiconductor manufacturing method of the first embodiment, the semiconductor substrate W held by the spin chuck 5 in the chamber 3 is processed by the substrate processing method including steps S1 to S23, and the processed semiconductor substrate W, i.e., a semiconductor, is manufactured.

[0245] In addition, the substrate processing method only needs to include at least one of the steps S1 and S16. Furthermore, the supply of the third gas GA3 and the gas GA may not be performed during the period T22 before the substrate is moved in and the period T21 before the substrate is moved out. In addition, the steps S101, S105, S161, and S164 are preferred examples, and the substrate processing method may not include the steps S101, S105, S161, and S164. In addition, Figure 4 to Figure 7 In the flowcharts shown, the order of the steps may be appropriately changed without departing from the gist of the present invention.

[0246] (Variation Example)

[0247] Reference Figure 8 and Fig. 9 , a substrate processing apparatus 100A according to a modified example of the first embodiment of the present invention is described. Figure 1 to Figure 7 The difference from the first embodiment described above is mainly that in the modification, the substrate processing apparatus 100A includes a substrate transport guide 42 for transporting the substrate W. Hereinafter, the modification will be described mainly with respect to the difference between the first embodiment and the second embodiment.

[0248] Figure 8 1 is a schematic cross-sectional view showing a processing device 1A included in a substrate processing device 100A according to a modified example. Figure 8 As shown, the processing device 1A includes not only Figure 2 The structure of the processing apparatus 1 shown further includes a substrate conveying guide 42 .

[0249] The substrate transport guide 42 is disposed on the transport path PA. The second gas supply unit 41 is disposed on the upper surface of the substrate transport guide 42. The substrate transport guide 42 extends along the transport path PA.

[0250] Fig. 9 4 is a perspective view showing the substrate transport guide 42. Fig. 9 As shown, the substrate transport guide 42 has a substantially square cylindrical shape. Figure 1 ) is carried in or out of the substrate W through the internal space 421 of the substrate carrying guide 42. Therefore, the substrate W is carried through the internal space 421 of the substrate carrying guide 42. That is, the carrying path PA ( Figure 8 ) passes through the internal space 421 of the substrate transport guide 42.

[0251] The second gas supply unit 41 has a hollow substantially rectangular parallelepiped shape. The second gas supply unit 41 includes a blast port 41a. Specifically, the top plate of the second gas supply unit 41 functions as the blast port 41a. The blast port 41a includes a plurality of ventilation holes 41b.

[0252] The front end of the pipe P5 is inserted into the ventilation hole 41b. Therefore, when the valve V5 is opened, the second gas GA2 is supplied to the inside of the second gas supply unit 41. Then, the second gas GA2 is blown out from the plurality of ventilation holes 41b toward the upper side in the vertical direction VD. In this way, the second gas supply unit 41 supplies the second gas GA2 toward the upper side in the vertical direction VD through the plurality of ventilation holes 41b of the air supply port 41a.

[0253] In addition, the second gas supply unit 41 may also include a fan. Figure 1 The second gas supply unit 41 of the first embodiment described above may be Fig. 9 The second gas supply unit 41 is shown. Furthermore, as long as the second gas GA2 can pass through the ventilation hole 41b, the shape and size of the ventilation hole 41b are not particularly limited. In addition, the air supply port 41a may include one ventilation hole 41b.

[0254] Above, as reference Fig. 9 As described above, the processing apparatus 1A of the modified example includes the substrate transport guide 42. Furthermore, the second gas GA2 flows in the chamber 3 and enters the substrate transport guide 42, and the gas containing oxygen is discharged from the internal space 421 of the substrate transport guide 42. As a result, the oxidation of the substrate W can be effectively suppressed during the transport process of the substrate W.

[0255] (Implementation Method 2)

[0256] Reference Figure 10 to Figure 14, a substrate processing apparatus 100B according to Embodiment 2 of the present invention is described. Embodiment 2 differs from Embodiment 1 mainly in that, in Embodiment 2, the first gas supply unit 13 can switch between the first gas GA1 and the fourth gas GA4. Hereinafter, the difference between Embodiment 2 and Embodiment 1 is mainly described.

[0257] Fig.10 1 is a schematic cross-sectional view showing a processing device 1B included in a substrate processing device 100B according to Embodiment 2. Fig.10 As shown, the processing device 1B does not include Figure 3 The substrate processing apparatus 100 shown includes a fluid supply unit 9, a unit lifting mechanism 11, a unit rotating mechanism 12, an opening and closing member 15, a member moving mechanism 17, a flow pipe 30, a pipe P1, a pipe P4, a valve V1, and a valve V4.

[0258] The processing apparatus 1B includes a moving part 61, a pipe P6, a pipe P7, a valve V6, and a valve V7. The moving part 61 moves the processing liquid supply part N2 between a processing position and a retreat position. The processing position indicates a position above the substrate W. When the processing liquid supply part N2 is located at the processing position, the processing liquid is supplied toward the substrate W. The retreat position indicates a position further outward than the substrate W in the horizontal direction HD.

[0259] Specifically, the moving part 61 includes an arm 611, a rotating shaft 613 and a moving mechanism 615. The arm 611 extends in a substantially horizontal direction HD. The processing liquid supply part N2 is installed at the front end of the arm 611. The arm 611 is combined with the rotating shaft 613. The rotating shaft 613 extends in a substantially vertical direction VD. The moving mechanism 615 rotates the rotating shaft 613 around a rotating axis along the substantially vertical direction VD, thereby rotating the arm 611 along a substantially horizontal plane. As a result, the processing liquid supply part N2 moves along a substantially horizontal plane. For example, the moving mechanism 615 includes an arm swing motor that rotates the rotating shaft 613 around the rotating axis. The arm swing motor is, for example, a servo motor. In addition, the moving mechanism 615 raises and lowers the rotating shaft 613 in the substantially vertical direction VD, thereby raising and lowering the arm 611. As a result, the processing liquid supply part N2 moves along the substantially vertical direction VD. For example, the moving mechanism 615 includes a ball screw mechanism and an arm lifting motor that applies a driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

[0260] The first gas supply unit 13 selectively supplies any one of the first gas GA1 and the fourth gas GA4 into the chamber 3 .

[0261] Specifically, the pipe P6 supplies the first gas GA1 from the air inlet 13b to the first gas supply unit 13. The valve V6 switches between starting and stopping the supply of the first gas GA1 to the first gas supply unit 13. When the valve V6 is opened, the first gas GA1 is supplied to the first gas supply unit 13, and the first gas supply unit 13 supplies the first gas GA1 to the chamber 3.

[0262] On the other hand, the pipe P7 supplies the fourth gas G4 from the air intake port 13b to the first gas supply unit 13. The valve V7 switches between the start and stop of the supply of the fourth gas GA4 to the first gas supply unit 13. When the valve V7 is opened, the fourth gas GA4 is supplied to the first gas supply unit 13, and the first gas supply unit 13 supplies the fourth gas GA4 to the chamber 3. The fourth gas GA4 is a gas different from oxygen and a gas different from an allotrope of oxygen. The fourth gas GA4 is, for example, an inert gas. The inert gas is, for example, nitrogen. In Embodiment 2, the fourth gas GA4 is nitrogen.

[0263] The control unit U31 controls the first gas supply unit 13 to supply the first gas GA1 toward the side where the spin chuck 5 is located during the substrate processing period T1. Therefore, the first gas supply unit 13 supplies the first gas GA1. Moreover, during the substrate processing period T1, the control unit U31 controls the second gas supply unit 41 not to supply the second gas GA2. Therefore, the second gas supply unit 41 does not supply the second gas GA2. As a result, according to Embodiment 2, during the substrate processing period T1, a downflow formed by the first gas GA1 can be effectively generated in the chamber 3.

[0264] On the other hand, the control unit U31 controls the second gas supply unit 41 to supply the second gas GA2 in at least one period T2 of the period T21 before the substrate is carried out and the period T22 before the substrate is carried in. Therefore, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a. As a result, as in the first embodiment, before and after the processing of the substrate W, the oxygen concentration in the chamber 3 can be effectively reduced, and the oxidation of the substrate W can be effectively suppressed when the substrate W in the chamber 3 is transported. In addition, the structure and operation of the second gas supply unit 41 are the same as those of the second gas supply unit 41 of the embodiment or the modified example. Therefore, the substrate processing apparatus 100B of the second embodiment has the same effect as that of the first embodiment.

[0265] Furthermore, the control unit U31 controls the first gas supply unit 13 to supply the fourth gas GA4 toward the side where the spin chuck 5 is located in at least one period T2 of the substrate carry-out period T21 and the substrate carry-in period T22. Therefore, the first gas supply unit 13 supplies the fourth gas GA4 toward the side where the spin chuck 5 is located in the vertical direction VD downward. As a result, the gas containing oxygen flows in the chamber 3 through the fourth gas GA4, moves toward the exhaust pipe 19, and is exhausted. Therefore, the oxygen concentration in the chamber 3 is further reduced, and the oxidation of the substrate W can be further effectively suppressed when the substrate W in the chamber 3 is transported.

[0266] In addition, the supply of the second gas GA2 to the chamber 3 and the supply of the fourth gas GA4 to the chamber 3 may be performed simultaneously or in different time periods. For example, the supply of the fourth gas GA4 to the chamber 3 may be performed after the second gas GA2 is supplied to the chamber 3. For example, the supply of the fourth gas GA4 to the chamber 3 may be performed before the second gas GA2 is supplied to the chamber 3. Furthermore, the supply of the second gas GA2 and the supply of the fourth gas GA4 may be partially overlapped.

[0267] Secondly, refer to Figure 10 to Figure 14 Next, a substrate processing method according to Embodiment 2 will be described. The substrate processing method is performed by the substrate processing apparatus 100B. In the substrate processing method, a substrate W held by the spin chuck 5 in the chamber 3 is processed. Fig.11 and Fig.12 This is a flowchart showing a substrate processing method according to the second embodiment. Fig.13 Yes means Fig.11 1 and 2. The flowchart of step S51 is shown in FIG. Step S51 shows an oxygen concentration reduction process before the substrate W is carried in. Fig.14 Yes means Fig.12 The flowchart of step S64 is shown in FIG. Step S64 shows the oxygen concentration reduction process before the substrate W is carried out.

[0268] like Fig.11 and Fig.12 As shown, the substrate processing method includes steps S51 to S69.

[0269] like Fig.10 and Fig.11 As shown in step S51, the substrate processing apparatus 100B performs an oxygen concentration reduction process before the substrate W is carried in. Fig.10 There is no substrate W in the chamber 3.

[0270] Specifically, if Fig.13 As shown, the oxygen concentration reduction process before the substrate W is carried in includes steps S511 to S515.

[0271] In step S511, the control unit U31 controls the valve V5 so that the second gas supply unit 41 supplies the second gas GA2. As a result, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3. Specifically, step S511 is Figure 6 The same is true for step S102 shown.

[0272] Next, in step S512, the control unit U31 controls the exhaust adjustment unit 21 to adjust the flow rate of the gas in the exhaust pipe 19 to be less than the flow rate of the gas in the substrate processing period T1. Figure 6 The same is true for step S105 shown.

[0273] Next, in step S513, the control unit U31 determines whether a third predetermined time has elapsed since the start of step S511. The third predetermined time indicates the time required for the oxygen concentration in the chamber 3 to reach a predetermined value or less. The predetermined value is, for example, 100 ppm.

[0274] When it is determined in step S513 that the third predetermined time has not elapsed (NO in step S513), the process repeatedly executes step S513 until it is determined in step S513 that the third predetermined time has elapsed.

[0275] On the other hand, when it is determined in step S513 that the third predetermined time has elapsed (YES in step S513 ), the process proceeds to step S514 .

[0276] In step S514, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 supplies the fourth gas GA4. As a result, the first gas supply unit 13 supplies the fourth gas GA4 toward the side where the spin chuck 5 is located.

[0277] Specifically, in step S514, the fourth gas GA4 is supplied from the ceiling 3b of the chamber 3 toward the side of the spin chuck 5 surrounded by the side wall 3a of the chamber 3 by the first gas supply unit 13. In particular, by executing step S514, the fourth gas GA4 is supplied during the period T22 before the substrate is carried in.

[0278] In addition, unless the control unit U31 controls the first gas supply unit 13 to stop supplying the fourth gas GA4 , the first gas supply unit 13 continues to supply the fourth gas GA4 .

[0279] Next, in step S515, the control unit U31 controls the valve V5 so that the second gas supply unit 41 stops supplying the second gas GA2. As a result, the second gas supply unit 41 stops supplying the second gas GA2. Next, the oxygen concentration reduction process before the substrate W is carried in is terminated, and the process returns to step S516. Fig.11 Specifically, the process enters Fig.11 Step S52 is shown.

[0280] Fig.11 Steps S52 to S55 are shown in Figure 4 Since steps S2 to S5 are the same as those shown, their description is omitted. After step S55, the process proceeds to step S56.

[0281] In step S56, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 stops supplying the fourth gas GA4. As a result, the first gas supply unit 13 stops supplying the fourth gas GA4. After step S56, the process proceeds to step S57.

[0282] Steps S57 and S58 and Figure 4 The steps S9 and S10 shown in FIG. 1 are the same, and thus description thereof is omitted. After step S58, the process proceeds to step S59. Fig.12 Step S59 is shown.

[0283] Fig.12 Steps S59 to S63 shown are respectively Figure 5 Since steps S11 to S15 are the same as those shown, their description is omitted. After step S63, the process proceeds to step S64.

[0284] In step S64 , the substrate processing apparatus 100B performs an oxygen concentration reduction process before the substrate W is unloaded.

[0285] like Fig.14 As shown, the oxygen concentration reduction process before the substrate W is carried out includes steps S651 to S656.

[0286] In step S651, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 stops supplying the first gas GA1. As a result, the first gas supply unit 13 stops supplying the first gas GA1.

[0287] Next, in step S652, the control unit U31 controls the valve V5 so that the second gas supply unit 41 supplies the second gas GA2. As a result, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3. Fig.13 However, in step S652, the second gas supply unit 41 supplies the second gas GA2 in the period T21 before the substrate is carried out.

[0288] Next, in step S653, the control unit U31 controls the exhaust adjustment unit 21 to adjust the flow rate of the gas in the exhaust pipe 19 to be less than the flow rate of the gas in the substrate processing period T1. Fig.13 The same is true for step S512 shown.

[0289] Next, in step S654, the control unit U31 determines whether a fourth predetermined time has elapsed since the start of step S651. The fourth predetermined time indicates the time required for the oxygen concentration in the chamber 3 to reach a predetermined value or less. The predetermined value is, for example, 100 ppm.

[0290] When it is determined in step S654 that the fourth predetermined time has not elapsed (NO in step S654), the process repeatedly executes step S654 until it is determined in step S654 that the fourth predetermined time has elapsed.

[0291] On the other hand, when it is determined in step S654 that the fourth predetermined time has elapsed (YES in step S654 ), the process proceeds to step S655 .

[0292] In step S655, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 supplies the fourth gas GA4. As a result, the first gas supply unit 13 supplies the fourth gas GA4 toward the side where the spin chuck 5 is located. Fig.13 However, by executing step S655, the fourth gas GA4 is supplied in the period T21 before the substrate is carried out.

[0293] Next, in step S656, the control unit U31 controls the valve V5 so that the second gas supply unit 41 stops supplying the second gas GA2. As a result, the second gas supply unit 41 stops supplying the second gas GA2. Next, the oxygen concentration reduction process before the substrate W is carried in is terminated, and the process returns to step S656. Fig.12 Specifically, the process enters Fig.12 Step S65 is shown.

[0294] Fig.12 Steps S65 to S68 shown are respectively Figure 5 Since steps S17 to S20 are the same as those shown, their description is omitted. After step S68, the process proceeds to step S69.

[0295] In step S69, the control unit U31 controls the first gas supply unit 13 so that the first gas supply unit 13 stops supplying the fourth gas GA4. As a result, the first gas supply unit 13 stops supplying the fourth gas GA4. Then, the process performed by the substrate processing method is completed.

[0296] Above, as reference Figure 11 to Figure 14 As described, according to Embodiment 2, during the period T22 before substrate loading and the period T21 before substrate unloading, the second gas supply unit 41 supplies the second gas GA2 into the chamber 3 through the air supply port 41a (step S511 and step S652). Moreover, during the period T22 before substrate loading and the period T21 before substrate unloading, the first gas supply unit 13 supplies the fourth gas GA4 into the chamber 3 (step S514 and step S655). Therefore, according to Embodiment 2, the gas containing oxygen flows into the chamber 3 through the second gas GA2 and the fourth gas GA4, and moves toward the exhaust pipe 19 and is discharged. As a result, before and after the processing of the substrate W, the oxygen concentration in the chamber 3 can be effectively reduced, and the oxidation of the substrate W can be effectively suppressed when the substrate W in the chamber 3 is transported.

[0297] In particular, in the second embodiment, after the oxygen concentration in the chamber 3 is rapidly reduced by the second gas GA2 from the second gas supply unit 41, the second gas GA2 is stopped, and the fourth gas GA4 from the first gas supply unit 13 is used to maintain the reduced oxygen concentration in the chamber 3. That is, when the oxygen concentration in the chamber 3 is reduced, the second gas supply unit 41 and the first gas supply unit 13 share the function, so that the oxygen concentration in the chamber 3 can be reduced efficiently.

[0298] Furthermore, the substrate processing method of the second embodiment can be used in a semiconductor manufacturing method. That is, in the semiconductor manufacturing method of the second embodiment, the semiconductor substrate W held by the spin chuck 5 in the chamber 3 is processed by the substrate processing method including steps S51 to S69, and the processed semiconductor substrate W, i.e., a semiconductor, is manufactured.

[0299] In addition, the substrate processing method only needs to include at least one of step S51 and step S64. In addition, step S512 and step S653 are preferred examples, and the substrate processing method may not include step S512 and step S653. Figure 11 to Figure 14 In the flowcharts shown, the order of the steps may be appropriately changed without departing from the gist of the present invention.

[0300] Furthermore, in the second gas supply mode of Embodiment 1 (including the variation) and Embodiment 2, in order to make the second gas GA2 supplied upward from the second gas supply unit 41 flow better along the top wall 3b and the side wall 3a, a rectifying plate may be provided at the connection between the top wall 3b and the side wall 3a. Furthermore, the connection between the top wall 3b and the side wall 3a may be rounded so that no accumulation of residual oxygen is formed between the top wall 3b and the side wall 3a.

[0301] The embodiments of the present invention are described above with reference to the accompanying drawings. However, the present invention is not limited to the embodiments, and can be implemented in various forms without departing from the scope of the present invention. In addition, the multiple constituent elements disclosed in the embodiments can be appropriately changed. For example, a constituent element among all the constituent elements shown in a certain embodiment can be added to the constituent elements of other embodiments, or some constituent elements among all the constituent elements shown in a certain embodiment can be deleted from the embodiments.

[0302] Furthermore, in the drawings, in order to make the invention easy to understand, each component is schematically represented as the main body. Considering the convenience of making the drawings, the thickness, length, number, spacing, etc. of each component shown in the drawings may be different from the actual ones. Furthermore, the configuration of each component shown in the above embodiment is an example and is not particularly limited. Various changes can be made within the scope that does not substantially deviate from the effect of the present invention.

[0303] Industrial Applicability

[0304] The present invention relates to a substrate processing device, a substrate processing method and a semiconductor manufacturing method, and has industrial applicability.

Claims

1. A substrate processing device for processing a substrate, the substrate processing device comprising: A substrate holding portion for holding the substrate; A chamber, comprising a side wall portion arranged around the substrate holding portion, and a top wall portion arranged above the substrate holding portion, and accommodating the substrate holding portion; A first gas supply portion, disposed on the top wall portion, and supplying a first gas toward a side where the substrate holding portion is located; a second gas supply unit, housed in the chamber and supplying a second gas into the chamber; and a control unit that controls the first gas supply unit and the second gas supply unit, and the second gas is a gas different from oxygen and different from an allotrope of oxygen, The second gas supply unit includes a blast port for supplying the second gas into the chamber. The air supply port is located vertically above the substrate holding position of the substrate holding portion and horizontally outside the substrate holding portion. The second gas supply portion supplies the second gas to the top wall portion through the air supply port portion so that the second gas flows vertically upward along the side wall portion.

2. The substrate processing apparatus according to claim 1, wherein the air supply port is arranged above a conveying path of the substrate, The transport path refers to a path when the substrate is transported through an openable and closable opening provided in the side wall portion.

3. A substrate processing method, processing a substrate held by a substrate holding portion in a chamber, the substrate processing method comprising: A step of supplying a first gas from a top wall portion of the chamber to a side of the substrate holding portion surrounded by a side wall portion of the chamber; as well as supplying a second gas into the chamber during a period different from a period during which the process of supplying the first gas is performed; and the second gas is a gas different from oxygen and different from an allotrope of oxygen, In the process of supplying the second gas, the second gas is supplied to the top wall portion in a manner of flowing vertically upward along the side wall portion from a position vertically upper than the position where the substrate holding portion holds the substrate and horizontally outer than the substrate holding portion.

4. The substrate processing method according to claim 3, wherein in the step of supplying the second gas, the second gas is supplied from a position above a conveyance path of the substrate, The transport path refers to a path when the substrate is transported through an openable and closable opening provided in the side wall portion.

5. A semiconductor manufacturing method, wherein a semiconductor substrate held by a substrate holding portion in a chamber is processed to manufacture the processed semiconductor substrate, i.e., a semiconductor, the semiconductor manufacturing method comprising: A step of supplying a first gas from a top wall portion of the chamber to a side of the substrate holding portion surrounded by a side wall portion of the chamber; as well as a step of supplying a second gas into the chamber during a period different from a period during which the step of supplying the first gas is performed, and the second gas is a gas different from oxygen and different from an allotrope of oxygen, In the process of supplying the second gas, the second gas is supplied to the top wall portion in a manner that flows vertically upward along the side wall portion from a position vertically upper than the holding position of the semiconductor substrate by the substrate holding portion and horizontally outer than the substrate holding portion.

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