An intelligent power module with integrated control chip

Abstract

The present application provides an intelligent power module with an integrated control chip, comprising: a control chip, which includes a universal I / O interface and a first VSS port; an HVIC chip, which includes a second VSS port, a high-side input port, a low-side input port, a high-side output port and a low-side output port; the high-side input port has only a HIN1 port and a HIN2 port, the low-side input port has only a LIN1 port and a LIN2 port, the high-side output port has only a HO1 port and a HO2 port, the low-side output port has only a LO1 port and a LO2 port, the second VSS port is connected to the first VSS port, and the HIN1 port, the HIN2 port, the LIN1 port and the LIN2 port are all connected to the universal I / O interface; and an inverter unit, the inverter unit has only a first triode transistor, a second triode transistor, a third triode transistor and a fourth triode transistor.

Description

Technical Field

[0001] The present application relates to the field of circuits, and in particular to an intelligent power module with an integrated control chip. Background Art

[0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates power switching devices and high-voltage drive circuits, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal of the control chip to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the control chip. Compared with traditional discrete solutions, the intelligent power module has won an increasingly large market with its advantages such as high integration and high reliability. It is especially suitable for frequency converters and various inverter power supplies that drive motors. It is an ideal power electronic device for variable frequency speed regulation, metallurgical machinery, electric traction, servo drive, and variable frequency home appliances.

[0003] For low-power motors, the current IPM circuit topology does not have a single-phase full-bridge inverter structure, let alone an IPM that integrates a single-phase full-bridge inverter structure + control chip. When it is necessary to control the intelligent power module through a control chip to drive loads such as motors, it can only be achieved by connecting discrete control chips, driver chips, and multiple triode transistors in a peripheral control circuit. The above implementation method has the problem of complex circuit design and occupies a large area of ​​the circuit substrate.

[0004] Therefore, the prior art has defects and is in urgent need of improvement. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide an intelligent power module with an integrated control chip, which can greatly simplify the peripheral circuit design of the module.

[0006] The embodiment of the present application provides an intelligent power module with an integrated control chip, including:

[0007] A control chip including a general I / O interface and a first VSS port;

[0008] An HVIC chip, comprising a second VSS port, a high-side input port, a low-side input port, a high-side output port and a low-side output port; the high-side input port has only a HIN1 port and a HIN2 port, the low-side input port has only a LIN1 port and a LIN2 port, the high-side output port has only a HO1 port and a HO2 port, the low-side output port has only a LO1 port and a LO2 port, the second VSS port is connected to the first VSS port, and the HIN1 port, the HIN2 port, the LIN1 port and the LIN2 port are all connected to the universal I / O interface;

[0009] an inverter unit, wherein the inverter unit comprises only a first triode transistor, a second triode transistor, a third triode transistor and a fourth triode transistor;

[0010] The first triode transistor has a gate connected to the HO1 port, a drain connected to point P, and a source connected to point A;

[0011] The second triode transistor has a gate connected to the LO1 port, a drain connected to the source of the first triode transistor, and a source connected to the second VSS port;

[0012] The third triode transistor has a gate connected to the HO2 port, a drain connected to the drain of the first triode transistor, and a source connected to point B;

[0013] The fourth triode transistor has a gate connected to the LO2 port, a drain connected to the source of the third triode transistor, and a source connected to the source of the second triode transistor.

[0014] Preferably, in the intelligent power module of the integrated control chip of the embodiment of the present application, at least two high-speed operational amplifiers, at least two comparators, at least one A / D converter, at least one D / A converter, a multiplexer, a communication interface module, a core processor, a power supply module and a clock module are provided inside the control chip, and the high-speed operational amplifier, comparator, A / D converter, D / A converter operational amplifier are all connected to the core processor through the multiplexer, and the power supply module is connected to the high-speed operational amplifier, comparator, A / D converter, D / A converter, multiplexer, communication interface module, core processor and clock module for powering the control chip.

[0015] Preferably, in the intelligent power module with integrated control chip of the embodiment of the present application, the HVIC chip further includes a Vreg port, the control chip further includes a VDD port, and the VDD port is connected to the Vreg port.

[0016] Preferably, the intelligent power module of the integrated control chip of the embodiment of the present application further includes a first bootstrap capacitor and a second bootstrap capacitor;

[0017] The HVIC chip further includes a VB1 port and a VS1 port, wherein the VB1 port is connected to the VS1 port via the first bootstrap capacitor; the HVIC chip further includes a VB2 port and a VS2 port, wherein the VB2 port is connected to the VS2 port via a second bootstrap capacitor.

[0018] Preferably, the intelligent power module of the integrated control chip of the embodiment of the present application further includes a sampling resistor;

[0019] A first end of the sampling resistor is connected to a source of the second triode transistor, and a second end of the sampling resistor is connected to the second VSS port;

[0020] An overcurrent protection circuit is provided in the HVIC chip, which is used to stop working when the current collected by the sampling resistor exceeds a set threshold.

[0021] Preferably, the intelligent power module of the integrated control chip of the embodiment of the present application further includes a first voltage-dividing resistor and a second voltage-dividing resistor connected in series;

[0022] The HVIC chip further includes an ITRIP port, the first voltage-dividing resistor is connected to the source of the second triode transistor, the middle connection point between the first voltage-dividing resistor and the second voltage-dividing resistor is connected to the ITRIP port, and the second voltage-dividing resistor is connected to the first VSS port and the second VSS port respectively;

[0023] The ITRIP port is pulled down to the second VSS port through a filter capacitor inside the HVIC chip.

[0024] Preferably, in the intelligent power module of the integrated control chip of the embodiment of the present application, the first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are one of IGBT transistors, reverse-conducting IGBT transistors or MOSFET transistors.

[0025] Preferably, in the intelligent power module of the integrated control chip of the embodiment of the present application, the first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are all IGBT transistors;

[0026] Each IGBT transistor is connected to a fast recovery diode, wherein the anode of the fast recovery diode is connected to the source of the IGBT transistor, and the cathode of the fast recovery diode is connected to the drain of the IGBT transistor.

[0027] Preferably, in the intelligent power module of the integrated control chip of the embodiment of the present application, the gate of each triode transistor is connected to a gate drive resistor, and the gate drive resistor is arranged inside the HVIC chip.

[0028] Preferably, in the intelligent power module of the integrated control chip of the embodiment of the present application, the HVIC chip is further provided with an overvoltage protection switch, an overtemperature protection switch, an error reporting circuit and an enabling circuit.

[0029] The embodiment of the present application adopts a single HVIC chip to control a single-phase full-bridge circuit formed by two groups of triode transistors, and integrates a control chip. It only needs to be externally connected to a bus energy storage capacitor, a power supply circuit, etc., and the control chip can automatically output the PWM waveform required for load motor driving after the program is burned. Power amplification is performed through the HVIC chip and the triode transistor to realize motor driving, inversion and other functions. There is no need to connect the control chip externally, the circuit design is simple, and it is easy to use. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 This is a schematic diagram of the structure of an intelligent power module with an integrated control chip in an embodiment of the present application.

[0032] Figure 2 The schematic diagram is a HVIC chip of an intelligent power module with an integrated control chip in an embodiment of the present application.

[0033] Figure 3 This is a schematic diagram of a control chip of an intelligent power module with an integrated control chip in an embodiment of the present application.

[0034] Figure 4A This is a side structural diagram of an intelligent power module with an integrated control chip in Example 1 of the present application.

[0035] Figure 4B This is a side structural diagram of an intelligent power module with an integrated control chip in Example 2 of the present application. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0037] In the description of this application, it should be noted that the terms "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0038] It should also be noted that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0039] Please also refer to Figure 1 , Figure 1 is a circuit structure diagram of an intelligent power module with an integrated control chip in some embodiments of the present application. It should be noted that: Figure 1The outer frame line 88 in the figure is only a schematic packaging line of the intelligent power module of the embodiment of the present application, and does not refer to the connection line of each component or each pin in the intelligent power module of the embodiment of the present application. The intelligent power module of the integrated control chip includes: a control chip 11, which includes a universal I / O interface and a first VSS port; an HVIC chip 10, which includes a second VSS port, a high-side input port, a low-side input port, a high-side output port and a low-side output port, the high-side input port has and only has a HIN1 port and a HIN2 port, the low-side input port has and only has a LIN1 port and a LIN2 port, the high-side output port has and only has a HO1 port and a HO2 port, and the low-side output port has and only has a LO1 port and a LO2 port; wherein the second VSS port is connected to the first VSS port, and the HIN1 port, the HIN2 port, the LIN1 port and the LIN2 port are all connected to the universal I / O interface, the universal I / O interface is at least one group and is 16 bits, and the control chip 11 outputs a PWM wave (Pulse) through the HIN1 port, the HIN2 port, the LIN1 port and the LIN2 port of the HVIC chip 10 WidthModulation, which is pulse width modulation, abbreviated as PWM), to control the HVIC chip 10; an inverter unit, the inverter unit has and only has a first triode transistor 20, a second triode transistor 30, a third triode transistor 40 and a fourth triode transistor 50; the first triode transistor 20, the gate of which is connected to the HO1 port, the drain of which is connected to the P point, and the source of which is connected to the A point; the second triode transistor 30, the gate of which is connected to the LO1 port, the drain of which is connected to the source of the first triode transistor 20, and the source of which is connected to the second VSS port; the third triode transistor 40, the gate of which is connected to the HO2 port, the drain of which is connected to the drain of the first triode transistor 20, and the source of which is connected to the B point; the fourth triode transistor 50, the gate of which is connected to the LO2 port, the drain of which is connected to the source of the third triode transistor 40, and the source of which is connected to the source of the second triode transistor 30.

[0040] It should be noted that if Figure 1 As shown, point P is the high voltage input terminal of the intelligent power module of the integrated control chip of the embodiment of the present application, point A is the first output terminal A of the intelligent power module of the integrated control chip of the embodiment of the present application, point B is the second output terminal B of the intelligent power module of the integrated control chip of the embodiment of the present application, and point N is the low voltage reference terminal of the intelligent power module of the integrated control chip of the embodiment of the present application. In practical applications, the first output terminal A and the second output terminal B are interfaces of the motor load, and point P is used to access the power supply of the motor load, and point N is connected to the source of the second triode transistor 30 and the fourth triode transistor 50.

[0041] In some embodiments, Figure 3As shown, the intelligent power module of the integrated control chip of the embodiment of the present application, the control chip 11 is an MCU chip, and the MCU chip is provided with at least two high-speed operational amplifiers (OPA), at least two comparators (CMP), at least one A / D converter (ADC), at least one D / A converter (DAC), a multiplexer (MUX), a communication interface module, a core processor, a power module and a clock module. The above-mentioned high-speed operational amplifier, comparator, A / D converter, D / A converter operational amplifier are all connected to the core processor through a multiplexer, and the power module is connected to the high-speed operational amplifier, comparator, A / D converter, D / A converter, multiplexer, communication interface module, core processor and clock module to power the MCU chip.

[0042] It should be noted that the above-mentioned high-speed operational amplifier is used to perform mathematical operations on the signal received or sent by the MCU chip; the comparator is used to compare the detection signal received by the MCU chip with the corresponding reference signal, and according to the comparison result, the MCU chip gives a corresponding control signal; the A / D converter and the D / A converter are both 12 bits, which are used for the conversion of digital-to-analog or analog-to-digital signals; the communication interface module includes UART\I2C\SPI and other communication modules; the core processor includes CPU, DSP, ASIC, SYS and other units, SYS contains at least 32KB Flash and at least 8KB SRAM, as well as watchdog, interrupt, register, etc.; the power supply circuit includes LDO (low dropout regulator, translated as low voltage difference linear regulator) and detection protection circuit, etc., to supply power to the internal circuit; the clock module includes a built-in RC oscillation clock circuit, an external crystal oscillator clock circuit, and PLL (Phase Locked Loop, which is a phase-locked loop or phase-locked loop, used to unify and integrate clock signals so that high-frequency devices can work normally, such as memory access data, etc.).

[0043] The MCU chip also includes multiple I / O pins (usually 4 to 8) for host computer communication and program simulation burning, as well as crystal oscillator pins derived from the clock module, such as Figure 1In addition, the HVIC chip 10 also includes a Vreg port, and the MCU chip also includes a VDD port, and the VDD port is connected to the Vreg port. Among them, the Vreg port is the reference voltage port of the HVIC chip 10, which provides a 5V voltage for the MCU chip. Therefore, in the intelligent power module of the integrated control chip of the embodiment of the present application, the MCU chip only needs to lead out 4 to 8 I / O pins for host computer communication and program simulation burning and two crystal oscillator pins, while the peripheral control chip has at least 8-44 pins. The intelligent power module of the integrated control chip of the embodiment of the present application can greatly reduce the number of package module pins, simplify circuit design, and facilitate use.

[0044] In some embodiments, Figure 2 As shown, Figure 2 It is a schematic diagram of an HVIC chip 10 of an intelligent power module in some embodiments of the present application. The HVIC chip 10 also includes a VCC port, which is led out as the VCC pin of the entire intelligent power module. And the second VSS port is also led out as the VSS pin of the entire intelligent power module. Among them, the VCC port is the positive terminal of the power supply of the HVIC chip 10, and the external power supply is connected through the VCC pin; the second VSS port is the negative terminal of the power supply of the HVIC chip 10, and the VSS pin is the common ground terminal of the intelligent power module. In actual applications, the voltage between the VCC port and the second VSS port is generally set to 15V. Of course, the voltage there can be set according to actual needs, and there is no limitation here.

[0045] It should be noted that the VCC pin of the intelligent power module is connected to the power circuit inside the HVIC chip 10 through the VCC port of the HVIC chip 10 to provide working power to the HVIC chip 10 . The HIN1 port of the HVIC chip 10 is connected to the first high-side drive circuit inside the HVIC chip 10, and outputs a control signal through the HO1 port of the HVIC chip 10 to determine the on-off of the first triode transistor 20; the HIN2 port of the HVIC chip 10 is connected to the second high-side drive circuit inside the HVIC chip 10, and outputs a control signal through the HO2 port of the HVIC chip 10 to determine the on-off of the third triode transistor 40; the LIN1 port of the HVIC chip 10 is connected to the first low-side drive circuit inside the HVIC chip 10, and outputs a control signal through the LO1 port of the HVIC chip 10 to determine the on-off of the second triode transistor 30; the LIN2 port of the HVIC chip 10 is connected to the second low-side drive circuit inside the HVIC chip 10, and outputs a control signal through the LO2 port of the HVIC chip 10 to determine the on-off of the fourth triode transistor 50. Among them, the HIN1 port, HIN2 port, LIN1 port and LIN2 port of the HVIC chip 10 of the intelligent power module of the embodiment of the present application receive the control signal of 0V or 5V of the MCU chip. Of course, according to actual needs, input signals of other voltage amplitudes can be received, which are specifically selected according to the actual devices connected to the circuit.

[0046] It should be further explained that a power undervoltage protection circuit is also provided inside the HVIC chip 10, which is connected to the power circuit to protect the intelligent power module and the device. The two high-side drive circuits are also connected to the high-side undervoltage protection circuit to protect the intelligent power module and the device.

[0047] Among them, the second triode transistor 30 and the first triode transistor 20 form a full-bridge circuit A1. The third triode transistor 40 and the fourth triode transistor 50 form a full-bridge circuit A2. Only one of the first triode transistor 20 and the second triode transistor 30 in the full-bridge circuit A1 can be turned on; and only one of the third triode transistor 40 and the fourth triode transistor 50 in the full-bridge circuit A2 can be turned on. Therefore, the first triode transistor 20 and the fourth triode transistor 50 form a group of paths, which are driven by the same group of signals and turned on / off at the same time; the third triode transistor 40 and the second triode transistor 30 form another group of paths, which are driven by the same group of signals and turned on / off at the same time.

[0048] In practical applications, the PWM wave sent by the MCU chip through the HIN1 port, HIN2 port, LIN1 port, and LIN2 port controls the on and off of the four triode transistors through the level signal output by the HO1 port, H02 port, LO1 port, and LO2 port of the HVIC chip 10. One of the paths formed by the first triode transistor 20 and the fourth triode transistor 50 and the other path formed by the third triode transistor 40 and the second triode transistor 30 is turned on to realize the variable frequency drive of the motor.

[0049] It should be noted that, accordingly, interlocking and dead zone circuits are provided between the first high-side driving circuit and the first low-side driving circuit, and between the second high-side driving circuit and the second low-side driving circuit inside the HVIC chip 10, so as to ensure that only one of the two triode transistors in the full-bridge circuit can be turned on to prevent short circuit.

[0050] Further, in some embodiments, the intelligent power module further includes a first bootstrap capacitor 101 and a second bootstrap capacitor 102. The HVIC chip 10 further includes a VB1 port and a VS1 port, a VB2 port and a VS2 port. The VB1 port is connected to the VS1 port through the first bootstrap capacitor 101. The VB2 port is connected to the VS2 port through the second bootstrap capacitor 102. The VB1 port is the positive terminal of the power supply of the first bootstrap capacitor 101, and the VS1 port is the negative terminal of the power supply of the first bootstrap capacitor 101; the VB2 port is the positive terminal of the power supply of the second bootstrap capacitor 102, and the VS2 port is the negative terminal of the power supply of the second bootstrap capacitor 102. The first bootstrap capacitor 101 and the second bootstrap capacitor 102 are used for energy storage power supply (or boost), providing boost for the power supply of the HVIC chip 10. The intelligent power module also includes two bootstrap diodes, the VCC port of the HVIC chip 10 is connected to the anodes of the two bootstrap diodes through the power supply circuit, and the cathodes of the two bootstrap diodes are respectively connected to the first bootstrap capacitor 101 and the second bootstrap capacitor 102 through the VB1 port and the VB2 port, and the bootstrap diodes are used for rectification to prevent current backflow to protect the power supply circuit. In the existing intelligent power module, it is mostly configured as a three-way three-phase full-bridge driver IC + 6 triode transistors, which makes the package area of ​​the module too large, and it is difficult to set the bootstrap capacitor, a high-power device, inside the module. The corresponding bootstrap capacitor can only be connected externally, but the external bootstrap capacitor will lead to poor usability and reliability of the module.

[0051] In some embodiments, the intelligent power module further includes a sampling resistor 55, and the second VSS port is sequentially connected to the source 30 of the second triode transistor, the source of the fourth triode transistor 50, and the low voltage reference terminal N of the intelligent power module through the sampling resistor 55. Further, the HVIC chip 10 is provided with an ITRIP port, which is an overcurrent protection port of the HVIC chip 10. An overcurrent protection circuit is provided in the HVIC chip 10, and the overcurrent protection circuit is connected to the ITRIP port, and the ITRIP port is pulled down to the second VSS port through a filter capacitor inside the HVIC chip 10.

[0052] Furthermore, the intelligent power module of the integrated control chip of the embodiment of the present application also includes a first voltage-dividing resistor 57 and a second voltage-dividing resistor 56 connected in series. The first voltage-dividing resistor 57 is connected to the source of the second triode transistor, the middle connection point of the first voltage-dividing resistor 57 and the second voltage-dividing resistor 56 is connected to the ITRIP port, and the second voltage-dividing resistor 56 is connected to the first VSS port and the second VSS port respectively. The second voltage-dividing resistor 56 is also connected to the high-speed operational amplifier inside the MCU chip, and the high-speed operational amplifier is also connected to the source 30 of the second triode transistor and the source of the fourth triode transistor 50. When the sampling resistor 55 detects the voltage at the low voltage reference terminal N of the intelligent power module, the voltage is fed back to the MCU chip through the intelligent power module, and the signal is amplified by the high-speed operational amplifier. The MCU converts the voltage into a corresponding current and compares it with a set current threshold. If the current exceeds the set threshold, the corresponding control signal is input through the ITRIP terminal, and the operation of the HVIC chip 10 is stopped by controlling the overcurrent protection circuit, and then the operation of the intelligent power module is stopped to protect the device.

[0053] Of course, it can be understood that in some embodiments, an over-temperature protection switch, an over-voltage protection switch, an enable protection switch, an error reporting circuit, etc. are also provided in the HVIC chip 10. For the over-temperature protection switch, the over-voltage protection switch, the enable protection switch, and the error reporting circuit, the HVIC chip 10 is correspondingly provided with a VTS port, an OV port, an EN port, and a FO port. The above-mentioned VTS port, EN port, and FO port are also connected to the MCU chip through a universal I / O interface, and the corresponding signals are received or fed back to the MCU chip, and the OV port is connected to the high-voltage input terminal P point to detect whether the voltage at the high-voltage input terminal P point exceeds the set threshold, and the device is included. Among them, the over-temperature protection switch is a positive temperature coefficient temperature protection switch. In addition, the FO port of the HVIC chip 10 is pulled up to the VCC port through a resistor.

[0054] In some embodiments, the first triode transistor 20, the second triode transistor 30, the third triode transistor 40 and the fourth triode transistor 50 of the intelligent power module of the integrated control chip of the embodiment of the present application are one of IGBT transistors, reverse-conducting IGBT transistors or MOSFET transistors.

[0055] like Figure 4A As shown, Figure 4A This is a schematic diagram of the side structure of an intelligent power module with an integrated control chip in Example 1 of the present application. Figure 4A In the illustrated embodiment, the first triode transistor 20, the second triode transistor 30, the third triode transistor 40 and the fourth triode transistor 50 are all reverse-conducting IGBT transistors or MOSFET transistors, and no fast recovery diode is required to be connected in parallel. Figure 4A In the embodiment, the HVIC chip 10 is bonded to the insulating substrate 15 by silver glue or solder, the reverse conducting IGBT transistor or MOSFET transistor 13 is bonded to the insulating substrate 15 by solder, and the control chip 11 is bonded to the insulating substrate 15 by silver glue or solder; the HVIC chip 10 is then connected to the insulating substrate circuit by gold, copper, aluminum or the like bonding wires 14, the IGBT transistor or MOSFET transistor 13 is connected to the insulating substrate circuit or the HVIC chip 10 by aluminum bonding wires; the lead frame 16 is bonded to the insulating substrate 15 by solder; finally, the substrate and all chips and bonding wires are encapsulated by epoxy molding material 17, with only the pins exposed.

[0056] like Figure 4B As shown, Figure 4B This is a schematic diagram of the side structure of an intelligent power module with an integrated control chip in Example 2 of the present application. Figure 4B In the illustrated embodiment, the first triode transistor 20, the second triode transistor 30, the third triode transistor 40 and the fourth triode transistor 50 are all IGBT transistors. Each IGBT transistor 13 is connected to a fast recovery diode 18, the anode of the fast recovery diode 18 is connected to the source of the IGBT transistor 13, and the cathode of the fast recovery diode 18 is connected to the drain of the IGBT transistor 13.

[0057] Further, in Figure 4A and Figure 4B In the illustrated embodiment, the gate of each triode transistor is connected to a gate driving resistor, which is disposed inside the HVIC chip 10 to prevent the driving current from being too large instantaneously and causing oscillation.

[0058] The intelligent power abrasive of the embodiment of the present application uses an insulating substrate to assemble chips such as MCU, HVIC, IGBT, FRD and lead frames, connects them through bonding wires to form a complete SIPM circuit, and is encapsulated together with epoxy molding materials to form physical protection, thereby forming a single-phase full-bridge SIPM module with complete system functions. A single SIPM only needs an external bus energy storage capacitor, a power supply circuit, etc. After the MCU chip program is burned, it can automatically output the PWM waveform required for motor drive. Through power amplification by the HVIC chip and the IGBT chip, it can realize motor drive, inversion and other functions, simplifying the circuit design and making it easy to use.

[0059] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An intelligent power module with integrated control chip, characterized in that: include: A control chip including a general I / O interface and a first VSS port; An HVIC chip, comprising a second VSS port, a high-side input port, a low-side input port, a high-side output port and a low-side output port; the high-side input port has only a HIN1 port and a HIN2 port, the low-side input port has only a LIN1 port and a LIN2 port, the high-side output port has only a HO1 port and a HO2 port, the low-side output port has only a LO1 port and a LO2 port, the second VSS port is connected to the first VSS port, and the HIN1 port, the HIN2 port, the LIN1 port and the LIN2 port are all connected to the universal I / O interface; an inverter unit, wherein the inverter unit comprises only a first triode transistor, a second triode transistor, a third triode transistor and a fourth triode transistor; The first triode transistor has a gate connected to the HO1 port, a drain connected to point P, and a source connected to point A; The second triode transistor has a gate connected to the LO1 port, a drain connected to the source of the first triode transistor, and a source connected to the second VSS port; The third triode transistor has a gate connected to the HO2 port, a drain connected to the drain of the first triode transistor, and a source connected to point B; The fourth triode transistor has a gate connected to the LO2 port, a drain connected to the source of the third triode transistor, and a source connected to the source of the second triode transistor; One of the paths formed by the first triode transistor and the fourth triode transistor and another path formed by the third triode transistor and the second triode transistor is selected to be turned on to realize variable frequency driving of the motor.

2. The intelligent power module with integrated control chip according to claim 1, characterized in that: The control chip is internally provided with at least two high-speed operational amplifiers, at least two comparators, at least one A / D converter, at least one D / A converter, a multiplexer, a communication interface module, a core processor, a power module and a clock module. The high-speed operational amplifier, the comparator, the A / D converter, the D / A converter operational amplifier are all connected to the core processor through the multiplexer, and the power module is connected to the high-speed operational amplifier, the comparator, the A / D converter, the D / A converter, the multiplexer, the communication interface module, the core processor and the clock module for supplying power to the control chip.

3. The intelligent power module with integrated control chip according to claim 1, characterized in that: The HVIC chip further includes a Vreg port, and the control chip further includes a VDD port, and the VDD port is connected to the Vreg port.

4. The intelligent power module with integrated control chip according to claim 1, characterized in that: Also includes a first bootstrap capacitor and a second bootstrap capacitor; The HVIC chip further includes a VB1 port and a VS1 port, wherein the VB1 port is connected to the VS1 port via the first bootstrap capacitor; the HVIC chip further includes a VB2 port and a VS2 port, wherein the VB2 port is connected to the VS2 port via a second bootstrap capacitor.

5. The intelligent power module with integrated control chip according to claim 1, characterized in that: Also includes a sampling resistor; A first end of the sampling resistor is connected to a source of the second triode transistor, and a second end of the sampling resistor is connected to the second VSS port; An overcurrent protection circuit is provided in the HVIC chip, which is used to stop working when the current collected by the sampling resistor exceeds a set threshold.

6. The intelligent power module with integrated control chip according to claim 1, characterized in that: Also includes a first voltage-dividing resistor and a second voltage-dividing resistor connected in series; The HVIC chip further includes an ITRIP port, the first voltage-dividing resistor is connected to the source of the second triode transistor, the middle connection point between the first voltage-dividing resistor and the second voltage-dividing resistor is connected to the ITRIP port, and the second voltage-dividing resistor is connected to the first VSS port and the second VSS port respectively; The ITRIP port is pulled down to the second VSS port through a filter capacitor inside the HVIC chip.

7. The intelligent power module with integrated control chip according to claim 1, characterized in that: The first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are one of IGBT transistors, reverse-conducting IGBT transistors or MOSFET transistors.

8. The intelligent power module with integrated control chip according to claim 1, characterized in that: The first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are all IGBT transistors; Each IGBT transistor is connected to a fast recovery diode, wherein the anode of the fast recovery diode is connected to the source of the IGBT transistor, and the cathode of the fast recovery diode is connected to the drain of the IGBT transistor.

9. The intelligent power module with integrated control chip according to claim 1, characterized in that: The gate of each triode transistor is connected to a gate driving resistor, and the gate driving resistor is arranged inside the HVIC chip.

10. The intelligent power module with integrated control chip according to claim 1, characterized in that: The HVIC chip is also provided with an overvoltage protection switch, an overtemperature protection switch, an error reporting circuit and an enabling circuit.

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