Apparatus and method for processing a substrate

Abstract

The present invention relates to an apparatus and a method for processing a substrate. The apparatus comprises a support unit which supports the substrate, an upper electrode unit which is disposed on the support unit, a gas supply unit which is coupled to the upper electrode unit and supplies a process gas onto the substrate, a lower electrode unit which is disposed under the substrate placed on the support unit, and a power source which applies power to an upper electrode of the upper electrode unit and grounds the lower electrode. The upper electrode unit comprises a base member, a dielectric layer formed on the base member, and the upper electrode which is provided in a mesh structure on the dielectric layer and generates plasma.

Description

[0001] Cross-references to related applications

[0002] The U.S. counterpart to this application claims priority to Korean Patent Application No. 10-2019-0045859, filed April 19, 2019, with the Korean Intellectual Property Office, pursuant to 35 U.S. Patent and Trademark Office §119, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concept described herein relate to a substrate processing apparatus and method, and more specifically, to an apparatus and method for processing a substrate using plasma. Background Technology

[0004] Generally, a linear scanning type atmospheric plasma device is used for plasma treatment of large-area objects under atmospheric pressure. However, while large-area objects can be treated by linear plasma spraying, differences in plasma treatment may exist between the areas treated initially and later, due to the scanning method. Furthermore, because a movable mechanism for linear scanning plasma must be installed, the plasma treatment device can occupy a relatively large space, and the processing time can be increased. Summary of the Invention

[0005] An embodiment of the present invention provides a substrate processing apparatus and method for uniformly plasma-processing all areas of an object.

[0006] Furthermore, embodiments of the present invention are provided to compactly configure a substrate processing apparatus for atmospheric plasma processing and reduce the processing time required for plasma processing of large-area objects.

[0007] However, the technical problems solved by the concepts of this invention are not limited to those described above. Any other technical problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0008] According to an exemplary embodiment, an apparatus for processing a substrate includes: a support unit supporting the substrate; an upper electrode unit disposed on the support unit; a gas supply unit coupled to the upper electrode unit and supplying process gas to the substrate; a lower electrode unit disposed below the substrate placed on the support unit; and a power source applying power to the upper electrode of the upper electrode unit and grounding the lower electrode. The upper electrode unit includes a substrate component, a dielectric layer formed on the substrate component, and an upper electrode provided by a mesh structure on the dielectric layer, wherein the upper electrode generates plasma.

[0009] When viewed from above, the aforementioned upper electrode can be provided in a size corresponding to the aforementioned lower electrode.

[0010] The aforementioned device may be an atmospheric plasma treatment device.

[0011] The aforementioned device may further include an actuator that moves the aforementioned upper electrode unit and the aforementioned gas supply unit upward or downward, and the aforementioned actuator may move the aforementioned upper electrode unit and the aforementioned gas supply unit toward the aforementioned support unit so that the aforementioned gas supply unit contacts the coupling member to form a processing space around the aforementioned substrate, the aforementioned coupling member being formed on the aforementioned support unit.

[0012] The aforementioned gas supply unit may include: a guide member coupled to the bottom of the aforementioned base member to form a gas inlet and a gas outlet between the aforementioned base member and the aforementioned guide member; a gas supply section including a gas supply line and a gas supply valve for supplying the aforementioned process gas to the aforementioned processing space via the aforementioned gas inlet; and an exhaust section including an exhaust line and an exhaust valve for releasing the aforementioned process gas in the aforementioned processing space via the aforementioned gas outlet.

[0013] The aforementioned guiding component may have a hollow rectangular parallelepiped shape, and the aforementioned gas inlet and the aforementioned gas outlet may be located on opposite sides.

[0014] The aforementioned guiding component may have multiple holes on one side surface, through which the aforementioned processing space can be observed.

[0015] The aforementioned guiding components may be formed of transparent materials.

[0016] The aforementioned device may further include a control unit for controlling the aforementioned gas supply unit and the aforementioned power supply. The aforementioned control unit can supply the aforementioned process gas to the aforementioned processing space by opening the aforementioned gas supply valve and closing the aforementioned exhaust valve. It can also generate the aforementioned plasma (also known as "plasma") by applying the aforementioned power to the aforementioned upper electrode of the aforementioned upper electrode unit and grounding the aforementioned lower electrode after a default time period since the aforementioned gas supply valve is opened.

[0017] The aforementioned device may further include a control unit for controlling the aforementioned gas supply unit and the aforementioned power supply. The aforementioned control unit may supply the aforementioned process gas to the aforementioned processing space by opening the aforementioned gas supply valve and simultaneously release the aforementioned process gas in the aforementioned processing space by opening the aforementioned exhaust valve. The aforementioned plasma may be generated by applying the aforementioned power to the aforementioned upper electrode of the aforementioned upper electrode unit and grounding the aforementioned lower electrode after a default time period since the aforementioned gas supply valve is opened.

[0018] The aforementioned process gases may include nitrogen (N2), air, argon (Ar), and C. x F x Any single gas or a mixture of the aforementioned single gas with at least one of water vapor (H2O) and oxygen (O2).

[0019] The aforementioned mesh structure of the upper electrode may have a polygonal shape.

[0020] The aforementioned grid structure may have a grid form, in which any of the following shapes are repeated: triangular, rectangular, and hexagonal honeycomb.

[0021] According to an exemplary embodiment, a method for plasma processing a substrate using the aforementioned apparatus according to the aforementioned exemplary embodiment includes: moving the aforementioned gas supply unit toward the aforementioned support unit so that the aforementioned gas supply unit contacts a coupling member to form a processing space around the aforementioned substrate, the aforementioned coupling member being formed on the aforementioned support unit; supplying process gas into the aforementioned processing space; generating plasma by applying electricity to the aforementioned upper electrode unit; and using the aforementioned plasma to plasma process the aforementioned substrate.

[0022] The aforementioned plasma can be generated under atmospheric pressure.

[0023] When viewed from above, the aforementioned upper electrode can be provided in a size corresponding to the aforementioned lower electrode.

[0024] The aforementioned supply of process gas may include supplying the aforementioned process gas to the aforementioned processing space by opening the gas supply valve and closing the exhaust valve, and the aforementioned generation of plasma may include generating the aforementioned plasma by applying the aforementioned power to the aforementioned upper electrode of the aforementioned upper electrode unit and grounding the aforementioned lower electrode after a default time period since the aforementioned gas supply valve was opened.

[0025] The aforementioned supply of process gas may include supplying the aforementioned process gas to the aforementioned processing space by opening the gas supply valve and releasing the aforementioned process gas in the aforementioned processing space by opening the exhaust valve, and the aforementioned generation of plasma may include generating the aforementioned plasma by applying the aforementioned power to the aforementioned upper electrode of the aforementioned upper electrode unit and grounding the aforementioned lower electrode after a default time period since the aforementioned gas supply valve was opened.

[0026] The aforementioned process gas may include any single gas selected from nitrogen (N2), air, argon (Ar) and CxFx, or a mixture of the aforementioned single gas with at least one of water vapor (H2O) and oxygen (O2).

[0027] The aforementioned mesh structure of the upper electrode may have a polygonal shape.

[0028] The aforementioned grid structure may have a grid form, in which any of the following shapes are repeated: triangular, rectangular, and hexagonal honeycomb. Attached Figure Description

[0029] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, throughout the drawings, unless otherwise specified, similar reference numerals denote similar parts, and wherein:

[0030] Figure 1 and Figure 2 This is an exemplary view showing a substrate processing apparatus according to an embodiment of the concept of the present invention.

[0031] Figure 3 and Figure 4 This is a view showing an upper electrode unit according to an embodiment of the concept of the present invention.

[0032] Figure 5 This is a view showing a guide component according to an embodiment of the concept of the present invention.

[0033] Figure 6 This is a view showing a form of coupling guide component and upper electrode unit according to an embodiment of the concept of the present invention.

[0034] Figure 7 and Figure 8 This is a view illustrating a method for controlling a gas supply unit according to an embodiment of the concept of the present invention.

[0035] Figure 9 This is a view showing the change of contact angles across all regions of a substrate according to an embodiment of the concept of the present invention.

[0036] Figure 10 This is a flowchart illustrating a substrate processing method according to an embodiment of the concept of the present invention. Detailed Implementation

[0037] Other advantages and features of the inventive concept and its implementation will be clarified by the following embodiments described in detail with reference to the accompanying drawings. However, the inventive concept can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the inventive concept is thorough and complete, and fully conveys the scope of the inventive concept to those skilled in the art. Furthermore, the inventive concept is defined only by the appended claims.

[0038] Even if not defined, all terms used herein (including technical or scientific terms) have the same meaning as generally accepted in the related art in relation to the concepts of this invention. Terms defined in a general dictionary are to be interpreted as having the same meaning as used in the related art and / or herein, and should not be construed as conceptual or overly formal, even when some terms are not clearly defined. The terminology used herein is for the purpose of describing embodiments only and is not intended to limit the concepts of this invention.

[0039] As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. It should be further understood that the term “comprises and / or comprising” as used herein means the presence of the stated feature or component, but does not exclude the presence or addition of one or more other features or components. Furthermore, the terms “comprising” and “having” should be interpreted in the same manner.

[0040] Figure 1 An exemplary view of a substrate processing apparatus according to an embodiment of the concept of the present invention is shown.

[0041] See Figure 1 The substrate processing apparatus 10 includes a support unit 100, a gas supply unit 200, an upper electrode unit 300, a lower electrode 400, a power supply 500, a control unit 600, and an actuator 900. The substrate processing apparatus 10 uses plasma to process the substrate W. For example, the substrate processing apparatus 10 may be an atmospheric plasma processing apparatus.

[0042] Support unit 100 can support the substrate W. Support unit 100 can use electrostatic force to attract the substrate W. Alternatively, support unit 100 can support the substrate in various ways (such as mechanical clamping). Support unit 100 may include a lower electrode 400. The lower electrode 400 can be positioned below the substrate W on support unit 100. Coupling member 110 can be provided on the edge region of support unit 100. Coupling member 110 can contact gas supply unit 200 to form a processing space around substrate W.

[0043] Gas supply unit 200 supplies process gases. These process gases may include nitrogen (N2), air, argon (Ar), and C. x F xA single gas or a mixture of such a single gas and at least one of water vapor (H2O) and oxygen (O2). Here, oxygen (O2) may be mixed with a process gas such as nitrogen or argon at a ratio of 1% or less of the amount of the process gas. A gas supply unit 200 may be mounted on a support unit 100 and may include a guide member 210, a gas supply section 220, and an exhaust section 230. To form a gas inlet 211 and a gas outlet 212, the guide member 210 may be coupled to the bottom of a base member 310. When the guide member 210 is coupled to the bottom of the base member 310, the gas inlet 211 and the gas outlet 212 may be formed between the base member 310 and the guide member 210. For example, the guide member 210 may have a hollow rectangular parallelepiped shape or a similar shape, and the gas inlet 211 and the gas outlet 212 may be located on opposite sides. However, the guide member 210 can be implemented in a hollow cylindrical shape, different from the hollow rectangular parallelepiped shape. Furthermore, the guide member 210 may have multiple holes 213 in its side surface through which the processing space can be observed. The guide member 210 may be formed of a transparent material. A gas supply section 220 supplies process gas into the processing space via a gas inlet 211 formed in the guide member 210. The gas supply section 220 includes a gas supply line 222 through which the process gas moves; and a gas supply valve 221 that controls the opening / closing of the gas supply line 222. An exhaust section 230 releases process gas from the processing space via a gas outlet 212 formed in the guide member 210. The exhaust section 230 includes an exhaust valve 231 that controls the opening / closing of the exhaust line 232 through which the process gas is released. Specifically, the gas supply unit 200 can open the gas supply valve 221 to supply process gas into the processing space, thereby creating a gas atmosphere around the substrate W. In this case, the gas supply unit 200 can either keep the exhaust valve 231 closed, or open the exhaust valve 231 to supply process gas into the processing space via the gas inlet 211 while simultaneously releasing process gas from the processing space via the gas outlet 212. The gas supply valve 221 and the exhaust valve 231 can be controlled by the control unit 600.

[0044] The upper electrode unit 300 may be mounted on the support unit 100. For example, the upper electrode unit 300 may be coupled to the top of the guide member 210 on the support unit 100. The upper electrode unit 300 may include a substrate member 310, an upper electrode 320, and a dielectric layer 330. The substrate member 310 may be formed of glass, but is not limited thereto. The upper electrode 320 and the dielectric layer 330 may be formed on the substrate member 310 by coating, and a power supply 500 is connected to the upper electrode 320 and the lower electrode 400. The power supply 500 may apply power to the upper electrode 320 and may ground the lower electrode 400. The upper electrode 320 may be formed on the substrate member 310, and the dielectric layer 330 may be formed on the upper electrode 320 having a mesh structure and may generate plasma under the substrate member 310. The dielectric layer 330 may have a circular shape, but is not limited thereto. The upper electrode 320 may be provided in a grid structure with a polygonal shape. For example, the upper electrode 320 may be provided in a grid pattern of repeating hexagonal honeycomb shapes. Alternatively, the upper electrode 320 may be provided in a pattern of repeating triangles, rectangles, or similar polygons, and the grid structure of the upper electrode 320 may be provided in an appropriate form depending on the manufacturing process. Furthermore, when viewed from above, the upper electrode 320 may be provided in a size corresponding to the lower electrode 400.

[0045] The lower electrode 400 can be positioned below the substrate W on the support unit 100. The lower electrode 400 can be provided inside the support unit 100. The power supply 500 can apply power to the upper electrode 320 of the upper electrode unit 300 and can ground the lower electrode 400. The power supply 500 can be a low-frequency power supply. For example, the power supply 500 can be a 4kW, 30kHz low-frequency power supply. However, it is not limited to this; the power supply 500 can be a high-frequency power supply or a power supply with various frequencies. The control unit 600 can control the gas supply unit 200, the power supply 500, and the actuator 900. Specifically, the control unit 600 can control the gas supply valve 221 and the exhaust valve 231 to supply process gas to or release process gas from the processing space. Furthermore, the control unit 600 can control the power supply 500 to apply power to the upper electrode 320 and the lower electrode 400 to generate plasma in the processing space.

[0046] Furthermore, a heat sink 800 can be provided on the upper electrode unit 300, and an insulating plate 700 can be provided between the upper electrode unit 300 and the heat sink 800 to prevent arcing phenomena that may be caused by the upper electrode unit 300 on the heat sink 800. According to embodiments of the present invention, the gas supply unit 200, upper electrode unit 300, insulating plate 700, and heat sink 800 can be sequentially coupled and can be driven upward or downward by an actuator 900. The actuator 900 can move the gas supply unit 200 and the upper electrode unit 300 upward or downward. Specifically, as in... Figure 2 As shown in the figure, the actuator 900 can move the gas supply unit 200 toward the support unit 100 so that the guide member 210 contacts the coupling member 110 formed on the support unit 100 to form a processing space around the substrate.

[0047] Figure 3 and Figure 4 This is a view illustrating an upper electrode unit according to an embodiment of the concept of the present invention.

[0048] See Figure 3 The upper electrode unit 300 may include a base member 310, an upper electrode 320 provided in a grid structure on the base member 310 to generate plasma, and a dielectric layer 330 formed on the base member 310. When viewed from above, the upper electrode 320 may be provided in a size corresponding to the lower electrode 400. Therefore, plasma can be simultaneously formed over the entire area of ​​the substrate W placed on the support unit 100, and the uniformity of plasma processing over the entire area of ​​the substrate can be improved. For example, the upper electrode 320 may have a grid-like structure, wherein rectangular shapes are repeated on the base member 310. Alternatively, as in Figure 4 As illustrated in the diagram, the upper electrode 320 can be provided in a repeating hexagonal honeycomb grid pattern. Because the upper electrode 320 is provided in a grid structure, the efficiency of plasma generation can be improved, and therefore a relatively low power can be applied to the upper electrode 320. The shape of the upper electrode 320 is not limited to... Figure 3 and Figure 4 The shape shown in the diagram, and the upper electrode 320 can be provided in a structure that repeats various polygonal shapes such as triangles, rectangles, hexagons, and similar shapes. Furthermore, although in Figure 3 and Figure 4 The upper electrode 320 and dielectric layer 330 are illustrated as having a circular shape, but the upper electrode 320 and dielectric layer 330 are not limited to this, and may have appropriate different shapes depending on the shape of the object placed on the support unit 100. For example, when the object has a rectangular shape, the dielectric layer 330 and upper electrode 320 may have a rectangular shape.

[0049] Figure 5 This is a view illustrating a guide member according to an embodiment of the concept of the present invention. The guide member 210 may have a hollow rectangular parallelepiped shape or a similar shape, and a gas inlet 211 and a gas outlet 212 may be formed on one side and the opposite side of the guide member 210. However, the guide member 210 may be implemented in a hollow cylindrical shape, different from the hollow rectangular parallelepiped shape. When the guide member 210 is coupled to a gas supply unit 200, the gas inlet 211 and the gas outlet 212 may supply process gas into the processing space or may release process gas in the processing space. The gas inlet 211 and the gas outlet 212 may be located on the opposite side of the guide member 210. The guide member 210 may have a plurality of holes 213 in its side surface through which the processing space is observed. For example, two or three holes 213 may be formed on each side surface of the guide member 210. Furthermore, the guide component 210 can be formed of a transparent material so that the operator can still observe the processing space even without a separate hole formed in the guide component 210. See also Figure 6 The upper electrode unit 300 can be coupled to the top of the guide member 210, and the processing space can be formed in the empty area of ​​the guide member 210. Plasma can be generated by applying electricity to the upper electrode 320 after process gas is supplied into the processing space.

[0050] Figure 7 and Figure 8 A view illustrating a method for controlling a gas supply unit according to an embodiment of the concept of the present invention.

[0051] See Figure 7 The control unit 600 controls the gas supply unit 200, the power supply 500, and the actuator 900. Specifically, the control unit 600 can open the gas supply valve 221 to supply process gas to the processing space via the gas inlet 211. In this case, the control unit 600 can keep the exhaust valve 231 closed. After a default time period since the gas supply valve 221 was opened, the control unit 600 can control the power supply 500 to apply power to the upper electrode 320 of the upper electrode unit 300. For example, one second after the gas supply valve 221 was opened, the control unit 600 can apply power to the upper electrode 320 to generate plasma in the processing space, wherein the exhaust valve 231 is closed. In this case, plasma processing can be performed on the entire area of ​​the substrate W in the processing space simultaneously, and thus the uniformity of plasma processing on the entire area of ​​the substrate W can be improved. For example, in the case of performing a hydrophilization process via atmospheric plasma processing, the standard deviation of the contact angle in the entire area of ​​the substrate W can be 1 degree or less.

[0052] SeeFigure 8 When process gas is supplied to the processing space by opening gas supply valve 221, control unit 600 can release process gas in the processing space by opening exhaust valve 231. That is, unlike in Figure 7 In this configuration, after a default time period following the opening of the gas supply valve 221, while simultaneously supplying process gas into the processing space and releasing process gas from the processing space, the control unit 600 may apply power to the upper electrode 320 to generate plasma. For example, several seconds after the opening of the gas supply valve 221, while simultaneously supplying process gas into the processing space and releasing process gas from the processing space via the opening of the gas supply valve 221, the control unit 600 may apply power to the upper electrode 320 to generate plasma, wherein the exhaust valve 231 is open. In this case, it is comparable to... Figure 7 In cases where plasma generation efficiency is further improved.

[0053] The substrate processing apparatus 10 according to an embodiment of the present invention can be an atmospheric plasma processing apparatus, and a process for hydrophilicating or hydrophobicating the surface of the substrate can be performed by atmospheric plasma processing of the substrate W placed on the support unit 100. In this case, the substrate processing apparatus 10 can adjust the distance between the upper electrode unit 300 and the substrate, or can adjust the time for performing atmospheric plasma processing on the substrate, and can efficiently process the substrate by adjusting the on-time of applying power from the power supply 500 to the upper electrode 320. In the case of performing a process for hydrophilicating the substrate by atmospheric plasma processing of the substrate using the upper electrode unit 300 and the lower electrode 400 according to an embodiment of the present invention instead of a conventional linear atmospheric plasma apparatus, a surface contact angle of 10 degrees or less can be formed in the entire area of ​​the substrate within a processing time of 20 seconds, which is comparable to... Figure 9 The connection time shown in the diagram is irrelevant. Furthermore, in this case, the standard deviation of the contact angle across the entire area of ​​the substrate can be 1 degree or less. That is, compared to existing linear atmospheric plasma processing apparatuses, the substrate processing apparatus 10 can reduce the atmospheric plasma processing time for substrate surface treatment and improve the uniformity of plasma treatment across the entire area of ​​the substrate. Additionally, the atmospheric plasma processing time for hydrophilication of the substrate surface can be 30 seconds or less.

[0054] Figure 10 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided. See also... Figure 10First, the substrate can be transferred onto the support unit 100, and then the substrate processing apparatus 10 can move the gas supply unit 200 toward the support unit 100 so that the gas supply unit 200 contacts the coupling member 110 formed on the support unit 100 (step S1010). Therefore, a processing space can be formed around the substrate placed on the support unit 100.

[0055] Next, the substrate processing apparatus 10 supplies process gas (or processing gas) to the processing space (step S1020). Specifically, the substrate processing apparatus 10 can supply process gas to the processing space by opening the gas supply valve 221 and closing the exhaust valve 231, or it can supply process gas to the processing space while simultaneously releasing process gas from the processing space by opening the gas supply valve 221 and opening the exhaust valve 231. Here, the process gas may include nitrogen (N2), air, argon (Ar), and C. x F x A gas or a similar single gas or a mixture of the single gas with at least one of water vapor (H2O) and oxygen (O2).

[0056] Next, the substrate processing apparatus 10 applies power to the upper electrode unit 300 to generate plasma (step S1030). Specifically, the substrate processing apparatus 10 can generate plasma by applying power to the upper electrode unit 300 after a default time period since the gas supply valve 221 is opened.

[0057] Subsequently, the substrate processing apparatus 10 performs plasma processing on the substrate using plasma (step S1040). Here, plasma is generated under atmospheric pressure.

[0058] According to various embodiments of the present invention, plasma can be used to uniformly process the entire area of ​​a substrate, the substrate processing apparatus for atmospheric plasma processing can be compactly configured, and the plasma processing time can be reduced.

[0059] According to various embodiments, the present invention concept has the advantages of uniformly processing the entire area of ​​the substrate with plasma, and the substrate processing apparatus for atmospheric plasma processing can be compactly configured and the plasma processing time can be reduced.

[0060] While embodiments of the present invention have been described above, it should be understood that these embodiments are provided to aid in understanding the present invention and are not intended to limit the scope of the present invention. Various modifications and equivalent embodiments can be made without departing from the spirit and scope of the present invention. The spirit and scope of the present invention should be determined by the technical concept of the claims, and it should be understood that the spirit and scope of the present invention are not limited to the literal description of the claims, but actually extend to the types of equivalent content in terms of technical value.

[0061] Although the concept of the invention has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

[0062] Symbol Explanation

[0063] 10: Substrate processing apparatus

[0064] 100: Support unit

[0065] 110: Coupling component

[0066] 200: Gas Supply Unit

[0067] 210: Guiding components

[0068] 211: Gas Inlet

[0069] 212: Gas outlet

[0070] 213: Kong

[0071] 220: Gas Supply Section

[0072] 221: Gas supply valve

[0073] 222: Gas supply pipeline

[0074] 230: Exhaust section

[0075] 231: Exhaust valve

[0076] 232: Exhaust pipe

[0077] 300: Upper electrode unit

[0078] 310: Base component

[0079] 320: Upper electrode

[0080] 330: Dielectric layer

[0081] 400: Lower electrode

[0082] 500: Power Supply

[0083] 600: Control Unit

[0084] 700: Insulation board

[0085] 800: Heat sink

[0086] 900: Actuator

[0087] S1010~S1040: Steps

[0088] W: Circuit board

Claims

1. An apparatus for processing a substrate, the apparatus comprising: Support unit, the support unit being configured to support the substrate; An upper electrode unit is mounted on the support unit; A gas supply unit, the gas supply unit being coupled to the upper electrode unit and the gas supply unit being configured to supply process gas to the substrate; The lower electrode is disposed under the substrate on the support unit; A power supply configured to apply power to the upper electrode of the upper electrode unit and ground the lower electrode; as well as An actuator, configured to move the upper electrode unit and the gas supply unit upwards or downwards. The upper electrode unit includes: Base components; A dielectric layer is formed on the substrate component; and The upper electrode is provided in a grid structure on the dielectric layer and is configured to generate plasma. The gas supply unit includes: A guiding component, coupled to the bottom of the base component, forms a gas inlet and a gas outlet between the base component and the guiding component; and The actuator moves the upper electrode unit and the gas supply unit toward the support unit so that the gas supply unit contacts the coupling member to form a processing space around the substrate. The coupling member is formed on the support unit. The device in question is an atmospheric plasma treatment device. The atmospheric plasma processing device is used to hydrophilize the surface of the substrate using the plasma.

2. The apparatus according to claim 1, wherein, When viewed from above, the upper electrode is provided in a size corresponding to the lower electrode.

3. The apparatus according to claim 1, wherein, The gas supply unit also includes: The gas supply section includes a gas supply pipeline and a gas supply valve, wherein the gas supply pipeline and the gas supply valve are configured to supply the process gas to the processing space via the gas inlet; and The exhaust section includes an exhaust line and an exhaust valve, wherein the exhaust line and the exhaust valve are configured to release the process gas in the processing space via the gas outlet.

4. The apparatus according to claim 3, wherein, The guiding component has a hollow rectangular parallelepiped shape, and the gas inlet and the gas outlet are located on opposite sides.

5. The apparatus according to claim 4, wherein, The guiding component has multiple holes in its side surface through which the processing space can be observed.

6. The apparatus according to claim 4, wherein, The guiding component is made of a transparent material.

7. The apparatus according to claim 4, wherein, The device further includes: The control unit is configured to control the gas supply unit and the power supply. The control unit supplies the process gas to the processing space by opening the gas supply valve and closing the exhaust valve, and generates the plasma by applying power to the upper electrode of the upper electrode unit and grounding the lower electrode after a default time period since the gas supply valve has been opened.

8. The apparatus according to claim 3, wherein, The device further includes: The control unit is configured to control the gas supply unit and the power supply. The control unit supplies the process gas into the processing space by opening the gas supply valve, and simultaneously releases the process gas in the processing space by opening the exhaust valve. The plasma is generated by applying power to the upper electrode of the upper electrode unit and grounding the lower electrode after a default time period since the gas supply valve has been opened.

9. The apparatus according to claim 1, wherein, The process gases include nitrogen (N2), air, argon (Ar), and carbon. x F x The gas is any single gas or a mixture of the single gas with at least one of water vapor (H2O) and oxygen (O2).

10. The apparatus according to any one of claims 1 to 9, wherein, The grid structure has a polygonal shape.

11. The apparatus according to claim 10, wherein, The grid structure has a grid form in which any one of the following shapes—triangular, rectangular, and hexagonal honeycomb—is repeated.

12. A method for plasma processing a substrate using the apparatus according to claim 1, the method comprising the steps of: The gas supply unit is moved toward the support unit to make the gas supply unit contact the coupling member to form a processing space around the substrate, the coupling member being formed on the support unit; Process gases are supplied to the processing space; Plasma is generated by supplying electricity to the upper electrode unit; and The substrate is plasma-treated using the plasma.

13. The method according to claim 12, wherein, The plasma is generated under atmospheric pressure.

14. The method according to claim 12, wherein, When viewed from above, the upper electrode is provided in a size corresponding to the lower electrode.

15. The method according to claim 12, wherein, The supply of the process gas includes the following steps: The process gas is supplied to the processing space by opening the gas supply valve and closing the exhaust valve, and The generation of the plasma includes: The plasma is generated by applying power to the upper electrode of the upper electrode unit and grounding the lower electrode after a default time period following the opening of the gas supply valve.

16. The method according to claim 12, wherein, The supply of the process gas includes the following steps: While supplying the process gas into the processing space by opening the gas supply valve, the process gas in the processing space is released by opening the exhaust valve. The generation of the plasma includes: The plasma is generated by applying power to the upper electrode of the upper electrode unit and grounding the lower electrode after a default time period following the opening of the gas supply valve.

17. The method according to claim 12, wherein, The process gases include nitrogen (N2), air, argon (Ar), and carbon. x F x The gas is any single gas or a mixture of the single gas with at least one of water vapor (H2O) and oxygen (O2).

18. The method according to any one of claims 12 to 17, wherein, The grid structure has a polygonal shape, wherein the grid structure has a grid form, wherein any one of a triangular shape, a rectangular shape, and a hexagonal honeycomb shape is repeated.

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