Power semiconductor module with power semiconductor switches

Abstract

The present invention relates to a power semiconductor module comprising: first and second intermediate circuit rails, an AC potential rail, and first and second encapsulated power semiconductor switches, each power semiconductor switch having a first and a second load current terminal and a control terminal, the first and second power semiconductor switches being arranged between the first intermediate circuit rail and the AC potential rail and between the second intermediate circuit rail and the AC potential rail, respectively, the first and second load terminals of the first power semiconductor switch being in conductive contact with the first intermediate circuit rail and the AC potential rail, respectively, the first and second load terminals of the second power semiconductor switch being in conductive contact with the AC potential rail and the second intermediate circuit rail, respectively, the control terminal of the first power semiconductor switch being arranged so as to protrude from the AC potential rail, and the second intermediate circuit rail having a first through-hole and a second through-hole, which are aligned flush with the control terminals of the first and second power semiconductor switches, respectively.

Description

Technical Field

[0001] The invention relates to a power semiconductor module having a power semiconductor switch. Background Art

[0002] DE 10 2016 100 617 A1 discloses a power semiconductor module comprising: a housing; a capacitor having a first capacitor terminal and a second capacitor terminal; unencapsulated power semiconductor components arranged side by side in the housing on a DCB substrate; and an electrical connection device electrically conductively connected to the power semiconductor components and having a first electrically conductive connection device contact surface and a second electrically conductive connection device contact surface electrically insulated from the first connection device contact surface. A housing wall of the housing forms a recess in which the capacitor is arranged. The first capacitor terminal is electrically conductively connected to the first connection device contact surface, and the second capacitor terminal is electrically conductively connected to the second connection device contact surface. The power semiconductor module has a low inductance. However, a disadvantage of this is that the power semiconductor module requires a large amount of space. Summary of the Invention

[0003] The object of the present invention is to create a low-inductance power semiconductor module which has a small footprint.

[0004] The object is achieved by a power semiconductor module, which has: a conductive first intermediate circuit rail for carrying a first DC voltage potential; a conductive second intermediate circuit rail for carrying a second DC voltage potential; a conductive AC potential rail for carrying an AC voltage potential; and encapsulated first and second power semiconductor switches, wherein the respective power semiconductor switch has a first main side and a second main side opposite the first main side, wherein the first load current terminal of the respective power semiconductor switch is arranged on the first main side, and the second load current terminal of the respective power semiconductor switch and the control terminal of the respective power semiconductor switch are arranged on the second main side, wherein the first power semiconductor switch is arranged between the first intermediate circuit rail and the AC potential rail, and the second power semiconductor switch is arranged between the second intermediate circuit rail and the AC potential rail. Between the AC potential rails, wherein a first load terminal of the first power semiconductor switch is in conductive contact with the first intermediate circuit rail, and a second load terminal of the first power semiconductor switch is in conductive contact with the AC potential rail, wherein the first load terminal of the second power semiconductor switch is in conductive contact with the AC potential rail, and the second load terminal of the second power semiconductor switch is in conductive contact with the second intermediate circuit rail, wherein the control terminal of the first power semiconductor switch is arranged to protrude from the AC potential rail in a direction perpendicular to a normal direction of the AC potential rail, wherein the second intermediate circuit rail has a first through-hole and a second through-hole, the first through-hole being aligned flush with the control terminal of the first power semiconductor switch in the normal direction of the AC potential rail, and the second through-hole being aligned flush with the control terminal of the second power semiconductor switch in the normal direction of the AC potential rail.

[0005] It has proven advantageous if the control terminal of the second power semiconductor switch is arranged to protrude from the AC potential rail in a direction perpendicular to the normal direction of the AC potential rail and in the opposite direction to the control terminal of the first power semiconductor switch. This allows a very symmetrical electrical and mechanical design of the power semiconductor module.

[0006] It has also proven advantageous if the power semiconductor module has electrically conductive first contact springs, each of which has first and second contact means and an elastic spring portion arranged between the first and second contact means, wherein a portion of the respective first contact spring extends through the first or second through-hole, and the first contact means of the respective first contact spring rests on the control terminal of the respective power semiconductor switch. This enables a reliable, vibration-resistant electrical connection of the printed circuit board to the control terminal of the respective power semiconductor switch.

[0007] It has also proven advantageous if an auxiliary terminal of the respective power semiconductor switch is arranged on the second main side, said auxiliary terminal being electrically conductively connected to the first load current terminal of the respective power semiconductor switch, wherein the auxiliary terminal of the first power semiconductor switch is arranged so as to protrude from the AC potential rail in a direction perpendicular to the normal direction of the AC potential rail, wherein the second intermediate circuit rail has a third through-hole and a fourth through-hole, the third through-hole being aligned in the normal direction of the AC potential rail flush with the control terminal of the first power semiconductor switch, and the fourth through-hole being aligned in the normal direction of the AC potential rail flush with the control terminal of the second power semiconductor switch. This allows direct access to the auxiliary terminals of the power semiconductor switches.

[0008] In this case, it has proven advantageous if the control terminal of the second power semiconductor switch is arranged to protrude from the AC potential rail in a direction perpendicular to the normal direction of the AC potential rail and in the opposite direction to the control terminal of the first power semiconductor switch. This allows for a very symmetrical electrical and mechanical design of the power semiconductor module.

[0009] Furthermore, it has proven advantageous if the first and third through-holes are connected to one another such that they form a first overall opening, and / or if the second and fourth through-holes are connected to one another such that they form a second overall opening. This allows for the creation of a power semiconductor module of particularly simple design.

[0010] Furthermore, it has proven advantageous if the power semiconductor module includes electrically conductive second contact springs, each of which includes first and second contact means and an elastic spring portion arranged between the first and second contact means, wherein a portion of the respective second contact spring extends through the third or fourth through-hole, and the first contact means of the respective second contact spring rests on the control terminal of the respective power semiconductor switch. This enables a reliable, vibration-resistant electrical connection of the printed circuit board to the auxiliary terminal of the respective power semiconductor switch.

[0011] It has also proven advantageous if the power semiconductor module has a first capacitor arranged between the first intermediate circuit rail and the second intermediate circuit rail, wherein a first electrical terminal of the first capacitor is electrically conductively connected to the first intermediate circuit rail, and a second electrical terminal of the first capacitor is electrically conductively connected to the second intermediate circuit rail. The first capacitor preferably serves as a buffer capacitor to reduce voltage and / or current oscillations. Due to its arrangement between the first and second intermediate circuit rails, the first capacitor can particularly effectively reduce any voltage and / or current oscillations that occur.

[0012] Furthermore, it has proven advantageous if the power semiconductor module includes a second capacitor that is not arranged between the first intermediate circuit rail and the second intermediate circuit rail, wherein a first electrical terminal of the second capacitor is electrically conductively connected to the first intermediate circuit rail, and a second electrical terminal of the second capacitor is electrically conductively connected to the second intermediate circuit rail. The second capacitor is preferably used as an intermediate circuit capacitor for storing electrical energy. The second capacitor preferably has a higher capacitance than the first capacitor.

[0013] Furthermore, it has proven advantageous if the respective load current terminal is in electrically conductive contact with the respective intermediate circuit rail or AC potential rail via a metal layer consisting of an aluminum-nickel metal composite material. This enables particularly reliable electrical contacting of the load current terminals of the power semiconductor switches with the intermediate circuit rail and the AC potential rail.

[0014] In this case, it has proven advantageous that the respective metal layers of the aluminum-nickel metal composite material are produced by an exothermic reaction of a stack of aluminum and nickel layers arranged alternately on top of one another, the aluminum and nickel layers having thicknesses in the nanometer range. This results in a power semiconductor module that can be manufactured particularly efficiently.

[0015] Furthermore, it has proven advantageous that a power semiconductor arrangement comprises a power semiconductor module according to the invention and a printed circuit board, the printed circuit board having a conductor track on its main side facing the second intermediate circuit track, wherein a first contact spring is arranged between the printed circuit board and the second intermediate circuit track, wherein in each case the respective second contact device of the first contact spring rests on one of the conductor tracks of the printed circuit board, wherein the printed circuit board is arranged compressed in the direction of the power semiconductor switch in such a way that the respective second contact device of the first contact spring forms an electrically conductive pressure contact with the conductor track of the printed circuit board, the second contact device rests on the conductor track, and the first contact device of the first contact spring forms an electrically conductive pressure contact with the control terminal of the power semiconductor switch. This creates a low-inductance power semiconductor arrangement whose printed circuit board is electrically conductively connected to the control terminal of the power semiconductor switch in a manner resistant to vibration loads.

[0016] In this case, it has proven advantageous if a second contact spring (if present) is arranged between the printed circuit board and the second intermediate circuit track, wherein the respective second contact means of the second contact spring rests on one of the conductor tracks of the printed circuit board, wherein the printed circuit board is arranged compressed in the direction of the power semiconductor switch in such a way that the respective second contact means of the second contact spring forms an electrically conductive pressure contact with the conductor track of the printed circuit board, the second contact means resting on the conductor track, and the first contact means of the second contact spring forms an electrically conductive pressure contact with the auxiliary terminal of the power semiconductor switch. This creates a low-inductance power semiconductor arrangement whose printed circuit board is electrically conductively connected to the auxiliary terminal of the power semiconductor switch in a manner resistant to vibration loads. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Exemplary embodiments of the present invention are described below with reference to the accompanying drawings listed below. In the drawings:

[0018] Figure 1 shows a perspective view of a power semiconductor module according to the present invention;

[0019] Figure 2 shows a top view of a power semiconductor module according to the present invention;

[0020] Figure 3 shows a cross-sectional view of a power semiconductor device having a power semiconductor module and a circuit board according to the present invention;

[0021] Figure 4 The first or second power semiconductor switch of the power semiconductor module according to the present invention is shown as viewed from below. Figures 1 to 3 Floor plan;

[0022] Figure 5 The first or second power semiconductor switch of the power semiconductor module according to the invention is shown as viewed from above. Figures 1 to 3 Floor plan;

[0023] Figure 6 A first power semiconductor switch of a power semiconductor module according to the invention and a first intermediate circuit track of a power semiconductor module according to the invention are shown, which are in electrically conductive contact with one another via a metal layer; and

[0024] Figure 7 A stack of nanometer-thick aluminum and nickel layers arranged alternately on top of each other is shown. DETAILED DESCRIPTION

[0025] Figure 1 A perspective view of a power semiconductor module 1 according to the invention is shown. Figure 2 A top view of a power semiconductor module 1 according to the invention is shown, wherein for the sake of clarity, Figure 1 The contact springs 7 and 8 shown in FIG are not Figure 2 Shown in. Figure 3 A cross-sectional view of a power semiconductor arrangement 15 is shown having a power semiconductor module 1 according to the invention and a printed circuit board 14 . Figure 4 FIG. 1 shows a diagram of a power semiconductor module 1 according to the present invention viewed from below the first power semiconductor switch 5 or the second power semiconductor switch 6. Figures 1 to 3 a floor plan of the Figure 5 A plan view from above of the power semiconductor switch 5 or 6 is shown.

[0026] The power semiconductor module 1 has an electrically conductive first intermediate circuit rail 2 for carrying a first DC voltage potential, an electrically conductive second intermediate circuit rail 3 for carrying a second DC voltage potential, and an electrically conductive AC potential rail 4 for carrying an AC voltage potential. The intermediate circuit rails 2 and 3 as well as the AC potential rail 4 are designed as flat conductors. The intermediate circuit rails 2 and 3 as well as the AC potential rail 4 are preferably in the form of metal busbars, in particular made of copper or a copper alloy.

[0027] The power semiconductor module 1 comprises a packaged first power semiconductor switch 5 and a packaged second power semiconductor switch 6. The power semiconductor switches 5 and 6 are embodied as packaged power semiconductor switches, ie as opposed to so-called bare chips, as for example in Figure 4 and Figure 5 As shown in FIG, they have a housing 5'' or 6''. The respective power semiconductor switch 5 or 6 has a first main side 5' or 6' and a second main side 5'' or 6'' opposite the first main side 5' or 6', wherein a first load current terminal 5a or 6a is arranged on the first main side 5' or 6', and a second load current terminal 5b or 6b and a control terminal 5c or 6c of the respective power semiconductor switch 5 or 6 are arranged on the second main side 5' or 6'. The power semiconductor switches 5 and 6 are typically in the form of transistors such as IGBTs (Insulated Gate Bipolar Transistors) or MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), or in the form of thyristors. In the case of this exemplary embodiment, the power semiconductor switches 5 and 6 are in the form of MOSFETs, wherein the respective first load current terminal 5a or 6a is in the form of a source terminal of the respective power semiconductor switch 5 or 6, the respective second load current terminal 5b or 6b is in the form of a drain terminal of the respective power semiconductor switch 5 or 6, and the respective control terminal 5c or 6c is in the form of a gate terminal of the respective power semiconductor switch 5 or 6.

[0028] A first power semiconductor switch 5 is arranged between the first intermediate circuit rail 2 and the AC potential rail 4, and a second power semiconductor switch 6 is arranged between the second intermediate circuit rail 3 and the AC potential rail 4. A first load terminal 5a of the first power semiconductor switch 5 is in electrically conductive contact with the first intermediate circuit rail 2, and a second load terminal 5b of the first power semiconductor switch 5 is in electrically conductive contact with the AC potential rail 4. A first load terminal 6a of the second power semiconductor switch 6 is in electrically conductive contact with the AC potential rail 4, and a second load terminal 6b of the second power semiconductor switch 6 is in electrically conductive contact with the second intermediate circuit rail 3.

[0029] The power semiconductor switches 5 and 6 are thus electrically interconnected to form a half-bridge circuit 5. In the exemplary embodiment, the first DC voltage potential is implemented as a negative DC voltage potential, and the second DC voltage potential is implemented as a positive DC voltage potential. Discrete, preferably encapsulated, diodes can be connected in anti-parallel with the power semiconductor switches 5 and 6.

[0030] The control terminal 5 c of the first power semiconductor switch 5 is arranged to protrude from the AC potential rail 4 in a direction perpendicular to the normal direction N of the AC potential rail 4. The normal direction N of the AC potential rail 4 is the normal direction N of the surface of the AC potential rail 4 arranged opposite the second load current terminal 5 b of the first power semiconductor switch 5. The second intermediate circuit rail 3 has a first through-hole 3 a and a second through-hole 3 b, the first through-hole 3 a being aligned flush with the control terminal 5 c of the first power semiconductor switch 5 in the normal direction N of the AC potential rail 4, and the second through-hole 3 b being aligned flush with the control terminal 6 c of the second power semiconductor switch 6 in the normal direction N of the AC potential rail 4.

[0031] Due to the very flat design of the power semiconductor module 1 according to the present invention, the module has low inductance and a small footprint. Due to the design of the power semiconductor switches 5 and 6 as a packaged component and the arrangement of the control terminal 5 c of the first power semiconductor switch 5 protruding from the AC potential rail 4 in a direction perpendicular to the normal direction N of the AC potential rail 4, in combination with the first through-hole 3 a and the second through-hole 3 b, a very flat design of the power semiconductor module can be achieved. Despite the very flat design of the power semiconductor module, direct electrical contact can still be made to the control terminals 5 c and 6 c of the power semiconductor switches 5 and 6.

[0032] Preferably, the control terminal 6 c of the second power semiconductor switch 6 protrudes from the AC potential rail 4 in a direction perpendicular to the normal direction N of the AC potential rail 4 and in the opposite direction to the control terminal 5 c of the first power semiconductor switch 5. This makes it possible to achieve a very symmetrical electrical and mechanical design of the power semiconductor module 1.

[0033] The power semiconductor module 1 preferably includes an electrically conductive first contact spring 7, each having a first contact device 7a and a second contact device 7b, and an elastic spring portion 7c disposed between the first contact device 7a and the second contact device 7b. The spring portion 7c is preferably designed as a coil spring. A portion of the respective first contact spring 7 extends through the respective through-hole 3a or 3b of the second intermediate circuit rail 3. The first contact device 7a of the respective first contact spring 7 rests on the respective control terminal 5c or 6c of the respective power semiconductor switch 5 or 6.

[0034] The auxiliary terminal 5 d or 6 d of the respective power semiconductor switch 5 or 6 is preferably arranged on the second main side 5 ″ or 6 ″ of the respective power semiconductor switch 5 or 6 , and is electrically conductively connected to the first load current terminal 5 a or 6 a of the respective power semiconductor switch 5 or 6 within the housing 5 ′ or 6 ′ of the respective power semiconductor switch 5 or 6 . The auxiliary terminal 5 d of the respective power semiconductor switch 5 is arranged so as to protrude from the AC potential rail 4 in a direction perpendicular to the normal direction N of the AC potential rail 4 . The second intermediate circuit rail 3 preferably has a third through-hole 3 c and a fourth through-hole 3 d , the third through-hole 3 c being aligned flush with the auxiliary terminal 5 d of the first power semiconductor switch 5 in the normal direction N of the AC potential rail 4 , and the fourth through-hole 3 d being aligned flush with the auxiliary terminal 6 d of the second power semiconductor switch 6 in the normal direction N of the AC potential rail 4 .

[0035] Preferably, the auxiliary terminal 6 d of the second power semiconductor switch 6 protrudes from the AC potential rail 4 in a direction perpendicular to the normal direction N of the AC potential rail 4 and in the opposite direction to the auxiliary terminal 5 d of the first power semiconductor switch 5 .

[0036] Furthermore, the first through hole 3a and the third through hole 3c may be connected to each other so that the first through hole 3a and the third through hole 3c form a first overall opening, and / or the second through hole 3b and the fourth through hole 3d may be connected to each other so that the second through hole 3b and the fourth through hole 3d form a second overall opening. In an exemplary embodiment, as shown by Figure 1 and Figure 2 As shown in the example in FIG, the second through hole 3b and the fourth through hole 3d are connected to each other.

[0037] The power semiconductor module 1 preferably includes a conductive second contact spring 8, each having a first contact device 8a and a second contact device 8b, and an elastic spring portion 8c disposed between the first contact device 8a and the second contact device 8b. The spring portion 8c is preferably designed as a coil spring. A portion of the respective second contact spring 8 extends through the corresponding through-hole 3c or 3d. The first contact device 8a of the respective second contact spring 8 rests on the auxiliary terminal 5d or 6d of the corresponding power semiconductor switch 5 or 6.

[0038] It should be noted that in order to guide and / or hold the contact springs 7 and 8, the power semiconductor module 1 may have a power semiconductor module housing, which is not shown in the figures, and has an open channel, wherein a part of the contact springs 7 and 8 is movably arranged in the open channel.

[0039] It should also be noted that in Figure 4 In the exemplary embodiment shown in , the respective power semiconductor switch 5 or 6 has three auxiliary terminals 5d or 6d, which are conductively connected to the first load current terminal 5a or 6a of the respective power semiconductor switch 5 or 6, which is inside the housing 5' or 6' of the respective power semiconductor switch 5 or 6.

[0040] exist Figure 3 The power semiconductor module 1, an example of which is shown in FIG, preferably has a first capacitor 9 arranged between a first intermediate circuit rail 2 and a second intermediate circuit rail 3. A first electrical terminal 9a of the first capacitor 9 is electrically conductively connected to the first intermediate circuit rail 2, and a second electrical terminal 9b of the first capacitor 9 is electrically conductively connected to the second intermediate circuit rail 3, for example by means of a soldered connection. The first capacitor 9 preferably serves as a buffer capacitor to reduce voltage and / or current oscillations. The power semiconductor module 1 preferably has a plurality of first capacitors 9.

[0041] The power semiconductor module 1 may include a second capacitor 10, which is preferably not arranged between the first intermediate circuit rail 2 and the second intermediate circuit rail 3. A first electrical terminal 10a of the second capacitor 10 is electrically conductively connected to the first intermediate circuit rail 2, and a second electrical terminal 10b of the second capacitor 2 is electrically conductively connected to the second intermediate circuit rail 3, for example by means of a soldering or welding connection. The second capacitor 10 preferably serves as an intermediate circuit capacitor for storing electrical energy. The first intermediate circuit rail 2 and the second intermediate circuit rail 3, together with the second capacitor 10, form a DC intermediate circuit. The power semiconductor module 1 may include a plurality of second capacitors 10.

[0042] The respective load current connection 5 a , 5 b , 6 a or 6 b is in each case electrically conductively contacted with the respective intermediate circuit rail 2 or 3 or AC potential rail 4 via a metal layer 11 which consists of an aluminum-nickel metal composite material. Figure 6 An example of this is shown in the form of a detailed view of the first load current connection 5a of the first power semiconductor switch 5 and the first intermediate circuit rail 2, which are in electrically conductive contact with each other via a metal layer 11 made of an aluminum-nickel metal composite material. The remaining load current connections 5b, 6a and 6b of the power semiconductor switches 5 and 6 are similarly Figure 6The illustrated method electrically conductively contacts the second intermediate circuit rail 3 or the AC potential rail 4. Preferably, the corresponding metal layer 11, which consists of an aluminum-nickel metal composite material, is produced by an exothermic reaction of a stack 11 ′ of aluminum layers 12 and nickel layers 13 arranged alternately on top of each other, the aluminum layers 12 and nickel layers 13 having a thickness in the nanometer range (see Figure 7 To form the metal layer 11 composed of an aluminum-nickel composite material, a stack 11′ is placed between two elements to be connected, here, between the first load current connection 5a of the first power semiconductor switch 5 and the first intermediate circuit rail 2. A voltage is then applied to the stack 11′, inducing an exothermic reaction in the stack 11′ that transforms the stack 11′ into the metal layer 11 composed of the aluminum-nickel composite material. The voltage is preferably applied to the stack 11′ by applying a voltage between the second load current connection 5b of the first power semiconductor switch 5 and the first intermediate circuit rail 2 in the forward direction of the first power semiconductor switch 5, followed by opening the first power semiconductor switch 5. The remaining electrically conductive contacts between the load current connections 5b, 6a, and 6b and the second intermediate circuit rail 3 or the AC potential rail 4 are preferably established in a similar manner. Of course, the electrically conductive contacts between the respective load current connections 5a, 5b, 6a, or 6b and the respective intermediate circuit rail 2 or 3 or the AC potential rail 4 can also be implemented, for example, as soldered or sintered contacts. It should be noted that for the sake of clarity, Figure 3 The corresponding metal layer 11 is not shown.

[0043] The power semiconductor device 15 comprises a power semiconductor module 1 according to the present invention and a printed circuit board 14. The printed circuit board 14 has a conductor track 14b on its second main side 14a, which faces the intermediate circuit rail 3. A first contact spring 7 is arranged between the printed circuit board 14 and the second intermediate circuit rail 3. The second contact means 7b of the first contact spring 7 each rests on one of the conductor tracks 14b on the printed circuit board 14. The printed circuit board 14 is compressed in the direction of the power semiconductor switches 5 and 6 so that the respective second contact means 7b of the first contact spring 7 forms an electrically conductive pressure contact with the conductor track 14b of the printed circuit board 14, the second contact means 7b resting on the conductor track 14b, and the first contact means 7a of the first contact spring 7 forms an electrically conductive pressure contact with the control terminals 5c and 6c of the power semiconductor switches 5 and 6. Furthermore, if present, a second contact spring 8 is arranged between the printed circuit board 14 and the second intermediate circuit rail 3. The respective second contact means 8b of the second contact spring 8 rests on one of the conductor tracks 14b on the printed circuit board 14. The circuit board 14 is arranged in a compressive manner in the direction of the power semiconductor switches 5 and 6 so that the corresponding second contact means 8b of the second contact spring 8 forms an electrically conductive pressure contact with the conductor track 14b of the circuit board 14, the second contact means 8b resting on the conductor track 14b, and the first contact means 8a of the second contact spring 8 forms an electrically conductive pressure contact with the auxiliary terminals 5d and 6d of the power semiconductor switches 5 and 6. The power semiconductor device 15 preferably has a pressure device 16, which presses the circuit board 14 with a force F in the direction of the power semiconductor switches 5 and 6. For this purpose, the pressure device 16 can be screwed to one of the intermediate circuit rails 2 and 3, the AC potential rail 4 or any other element, for example by means of a screw connection not shown in the figure. In order to activate the power semiconductor switches 5 and 6, a control circuit can be arranged on the circuit board 14, for example, which is Figure 3 . It should be noted that, instead of the contact springs 7 or 8 , the power semiconductor module 1 can also have a cable that is electrically conductively connected to the control terminals 5 c and 6 c of the power semiconductor switches 5 and 6 and, if present, to the auxiliary terminals 5 d and 6 d of the power semiconductor switches 5 and 6 , for example, by means of soldered joints. The cable can be electrically conductively connected to the conductor tracks 14 b of the circuit board 14 , for example, by means of a soldered connection.

[0044] Of course, features mentioned in the singular may also occur multiple times in the power semiconductor module according to the invention, unless inherently excluded.

[0045] At this point it should be pointed out that, as long as the features of different exemplary embodiments of the present invention are not mutually exclusive, said features may of course be combined freely without departing from the scope of the present invention.

Claims

1. A power semiconductor module comprising a first electrically conductive intermediate circuit rail (2) for carrying a first DC voltage potential, a second electrically conductive intermediate circuit rail (3) for carrying a second DC voltage potential, an electrically conductive AC potential rail (4) for carrying an AC voltage potential, and encapsulated first (5) and second (6) power semiconductor switches, characterized in that The respective power semiconductor switches (5, 6) have a first main side (5', 6') and a second main side (5", 6") opposite the first main side (5', 6'), wherein a first load current terminal (5a, 6a) of the respective power semiconductor switch (5, 6) is arranged on the first main side (5', 6'), and a second load current terminal (5b, 6b) of the respective power semiconductor switch (5, 6) and a control terminal (5c, 6c) of the respective power semiconductor switch (5, 6) are arranged on the second main side (5", 6"), wherein the first power semiconductor switch (5) is arranged between a first intermediate circuit rail (2) and an AC potential rail (4), and the second power semiconductor switch (6) is arranged between a second intermediate circuit rail (3) and an AC potential rail (4), wherein the first load terminal (5a) of the first power semiconductor switch (5) is in conductive contact with the first intermediate circuit rail (2), and the first power semiconductor switch (5) ) is in conductive contact with the AC potential rail (4), wherein the first load terminal (6a) of the second power semiconductor switch (6) is in conductive contact with the AC potential rail (4), and the second load terminal (6b) of the second power semiconductor switch (6) is in conductive contact with the second intermediate circuit rail (3), wherein the control terminal (5c) of the first power semiconductor switch (5) protrudes from the AC potential rail (4) in a direction perpendicular to the normal direction (N) of the AC potential rail (4), wherein the second intermediate circuit rail (3) has a first through-hole (3a) and a second through-hole (3b), the first through-hole (3a) being aligned flush with the control terminal (5c) of the first power semiconductor switch (5) in the normal direction (N) of the AC potential rail (4), and the second through-hole (3b) being aligned flush with the control terminal (6c) of the second power semiconductor switch (6) in the normal direction (N) of the AC potential rail (4).

2. The power semiconductor module according to claim 1, characterized in that The control terminal (6c) of the second power semiconductor switch (6) is arranged to protrude from the AC potential track (4) in a direction perpendicular to the normal direction (N) of the AC potential track (4) and in a direction opposite to the control terminal (5c) of the first power semiconductor switch (5).

3. The power semiconductor module according to claim 1, wherein The power semiconductor module (1) has a conductive first contact spring (7), each of which has a first contact device (7a) and a second contact device (7b) and an elastic spring portion (7c) arranged between the first contact device (7a) and the second contact device (7b), wherein a portion of the corresponding first contact spring (7) extends through the first through-hole (3a) or the second through-hole (3b), and the first contact device (7a) of the corresponding first contact spring (7) rests on the control terminal (5c, 6c) of the corresponding power semiconductor switch (5, 6).

4. The power semiconductor module according to claim 1 or 2, characterized in that Auxiliary terminals (5d, 6d) of the respective power semiconductor switches (5, 6) are arranged on the second main side (5", 6"), the auxiliary terminals (5d, 6d) being electrically conductively connected to first load current terminals (5a, 6a) of the respective power semiconductor switches (5, 6), wherein the auxiliary terminal (5d) of the first power semiconductor switch (5) is arranged to protrude from the AC potential rail (4) in a direction perpendicular to the normal direction (N) of the AC potential rail (4), wherein the second intermediate circuit rail (3) has a third through-hole (3c) and a fourth through-hole (3d), the third through-hole (3c) being aligned flush with the auxiliary terminal (5d) of the first power semiconductor switch (5) in the normal direction (N) of the AC potential rail (4), and the fourth through-hole (3d) being aligned flush with the auxiliary terminal (6d) of the second power semiconductor switch (6) in the normal direction (N) of the AC potential rail (4).

5. The power semiconductor module according to claim 4, characterized in that The auxiliary terminal (6d) of the second power semiconductor switch (6) is arranged to protrude from the AC potential track (4) in a direction perpendicular to the normal direction (N) of the AC potential track (4) and in a direction opposite to the auxiliary terminal (5d) of the first power semiconductor switch (5).

6. The power semiconductor module according to claim 4, characterized in that The first and third through holes (3a, 3c) are connected to each other so that the first and third through holes (3a, 3c) form a first overall opening, and / or the second and fourth through holes (3b, 3d) are connected to each other so that the second and fourth through holes (3b, 3d) form a second overall opening.

7. The power semiconductor module according to claim 5, characterized in that The first and third through holes (3a, 3c) are connected to each other so that the first and third through holes (3a, 3c) form a first overall opening, and / or the second and fourth through holes (3b, 3d) are connected to each other so that the second and fourth through holes (3b, 3d) form a second overall opening.

8. The power semiconductor module according to claim 4, characterized in that The power semiconductor module (1) has a conductive second contact spring (8), the second contact spring (8) respectively having a first contact device (8a) and a second contact device (8b) and an elastic spring portion (8c) arranged between the first contact device (8a) and the second contact device (8b), wherein a portion of the corresponding second contact spring (8) extends through the third through-hole (3c) or the fourth through-hole (3d), and the first contact device (8a) of the corresponding second contact spring (8) rests on the control terminal (5d, 6d) of the corresponding power semiconductor switch (5, 6).

9. The power semiconductor module according to claim 1 or 2, characterized in that The power semiconductor module (1) has a first capacitor (9) arranged between the first intermediate circuit rail (2) and the second intermediate circuit rail (3), wherein a first electrical terminal (9a) of the first capacitor (9) is electrically conductively connected to the first intermediate circuit rail (2) and a second electrical terminal (9b) of the first capacitor (9) is electrically conductively connected to the second intermediate circuit rail (3).

10. The power semiconductor module according to claim 1 or 2, characterized in that The power semiconductor module (1) has a second capacitor (10), which is not arranged between the first intermediate circuit rail (2) and the second intermediate circuit rail (3), wherein a first electrical terminal (10a) of the second capacitor (10) is electrically conductively connected to the first intermediate circuit rail (2) and a second electrical terminal (10b) of the second capacitor (10) is electrically conductively connected to the second intermediate circuit rail (3).

11. The power semiconductor module according to claim 1 or 2, characterized in that: The respective load current terminals (5a, 5b, 6a, 6b) are each in conductive contact with the respective intermediate circuit rail (2, 3) or AC potential rail (4) via a metal layer (11), which consists of an aluminum-nickel metal composite material.

12. The power semiconductor module according to claim 11, characterized in that The respective metal layer (11) consisting of an aluminum-nickel metal composite material is produced by the exothermic reaction of a stack (11') of aluminum layers (12) and nickel layers (13) arranged alternately on top of each other, the aluminum layers (12) and nickel layers (13) having a thickness in the nanometer range.

13. A power semiconductor arrangement having a power semiconductor module (1) according to any one of claims 1 to 7 and 9 to 12 and having a printed circuit board (14) which has conductor tracks (14b) on its main side (14a) facing the second intermediate circuit track (3), characterized in that A first contact spring (7) is arranged between a circuit board (14) and a second intermediate circuit track (3), wherein the respective second contact means (7b) of the first contact spring (7) each rests on one of the conductor tracks (14b) of the circuit board (14), wherein the circuit board (14) is arranged compressed in the direction of the power semiconductor switches (5, 6) so that the respective second contact means (7b) of the first contact spring (7) forms an electrically conductive pressure contact with the conductor track (14b) of the circuit board (14), the second contact means (7b) resting on the conductor track (14b), and the first contact means (7a) of the first contact spring (7) forms an electrically conductive pressure contact with the control terminals (5c, 6c) of the power semiconductor switches (5, 6).

14. A power semiconductor arrangement comprising a power semiconductor module (1) according to claim 8 and a printed circuit board (14) which has conductor tracks (14b) on its main side (14a) facing the second intermediate circuit track (3), characterized in that A first contact spring (7) is arranged between a circuit board (14) and a second intermediate circuit track (3), wherein the respective second contact means (7b) of the first contact spring (7) each rests on one of the conductor tracks (14b) of the circuit board (14), wherein the circuit board (14) is arranged compressed in the direction of the power semiconductor switches (5, 6) so that the respective second contact means (7b) of the first contact spring (7) forms an electrically conductive pressure contact with the conductor track (14b) of the circuit board (14), the second contact means (7b) resting on the conductor track (14b), and the first contact means (7a) of the first contact spring (7) forms an electrically conductive pressure contact with the control terminals (5c, 6c) of the power semiconductor switches (5, 6).

15. The power semiconductor device according to claim 14, characterized in that A second contact spring (8) is arranged between a circuit board (14) and a second intermediate circuit track (3), wherein a corresponding second contact device (8b) of the second contact spring (8) rests on one of the conductor tracks (14b) of the circuit board (14), wherein the circuit board (14) is arranged compressed in the direction of the power semiconductor switches (5, 6) so that the corresponding second contact device (8b) of the second contact spring (8) forms an electrically conductive pressure contact with the conductor track (14b) of the circuit board (14), the second contact device (8b) resting on the conductor track (14b), and the first contact device (8a) of the second contact spring (8) forms an electrically conductive pressure contact with the auxiliary terminal (5d, 6d) of the power semiconductor switches (5, 6).

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