Electrode device, semiconductor device, and semiconductor system

Abstract

The present invention provides an electrode device, a semiconductor device, and a semiconductor system capable of accurately detecting an object to be detected. According to one embodiment, an electrode device 11 is used to detect the capacitance of a mutual capacitance system and includes a receiving electrode PR1, a transmitting electrode PX1 arranged facing the receiving electrode PR1, a transmitting electrode PX2 arranged facing the receiving electrode PR1, with the transmitting electrode PX1 interposed between the transmitting electrode PX2 and the receiving electrode PR1, and a dielectric plate 101 disposed between the transmitting electrode PX1 and the transmitting electrode PX2 to maintain a fixed distance and dielectric constant between the transmitting electrodes PX1 and PX2.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The disclosure of Japanese Patent Application No. 2019-083988 filed on April 25, 2019 including specification, drawings and abstract is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to an electrode device, a semiconductor device, and a semiconductor system. For example, the present invention relates to an electrode device, a semiconductor device, and a semiconductor system suitable for accurately detecting an object to be detected. Background Art

[0004] In recent years, there has been a need to use mutual capacitance sensors to accurately detect whether a detection object (detection target object) such as a piece of paper is inserted between electrodes or whether a touch electrode is touched by a detection object such as a finger. For example, Patent Document 1 discloses the structure of a mutual capacitance touch sensor for detecting whether a touch electrode is touched by a finger. The disclosed technologies are listed below.

[0005] [Patent Document 1]

[0006] Japanese Unexamined Patent Application Publication No. 2017-204900. Summary of the Invention

[0007] However, in conventional configurations, when the distance between the electrodes changes unintentionally due to slight vibrations, etc., unintentional fluctuations in the value may occur, regardless of the presence or absence of the object to be detected or when detecting the object to be detected, and there is a possibility of false detection or detection errors. In other words, in conventional configurations, it is still impossible to accurately detect the object to be detected. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

[0008] According to one embodiment, an electrode device used for mutual capacitance detection includes: a receiving electrode; a first transmitting electrode disposed opposite the receiving electrode; a second transmitting electrode disposed opposite the receiving electrode with the first transmitting electrode interposed between the second transmitting electrode and the receiving electrode; and a dielectric substrate provided between the first transmitting electrode and the second transmitting electrode for fixing the distance and dielectric constant between the first transmitting electrode and the second transmitting electrode.

[0009] According to one embodiment, a semiconductor device includes: a receiving electrode; a first transmitting electrode, which is arranged opposite to the receiving electrode; a second transmitting electrode, which is arranged opposite to the receiving electrode and with the first transmitting electrode interposed between the second transmitting electrode and the receiving electrode; and a dielectric substrate, which is provided between the first transmitting electrode and the second transmitting electrode and is used to fix the distance and dielectric constant between the first transmitting electrode and the second transmitting electrode; a pulse signal output circuit, which is used to selectively output a pulse signal to any one of the first transmitting electrode and the second transmitting electrode of an electrode device; a capacitance detection circuit, which calculates a capacitance change between the first transmitting electrode and the receiving electrode by using a current consumed in the receiving electrode when the pulse signal is applied to the first transmitting electrode and a current consumed in the receiving electrode when the pulse signal is applied only to the second transmitting electrode; and an arithmetic processing unit, which determines whether a target object to be detected is set in the electrode device based on a detection result of the capacitance detection circuit.

[0010] According to one embodiment, a semiconductor system includes: an electrode arrangement and a semiconductor device, wherein the electrode arrangement includes: a receiving electrode; a first transmitting electrode disposed facing the receiving electrode; a second transmitting electrode disposed facing the receiving electrode with the first transmitting electrode interposed between the second transmitting electrode and the receiving electrode; and a dielectric substrate provided between the first transmitting electrode and the second transmitting electrode to fix the distance and dielectric constant between the first transmitting electrode and the second transmitting electrode, and wherein the semiconductor device includes: a pulse signal output circuit for selectively outputting a pulse signal to any one of the first transmitting electrode and the second transmitting electrode; a capacitance detection circuit for calculating an amount of capacitance change between the first transmitting electrode and the receiving electrode using a current consumed in the receiving electrode when the pulse signal is applied to the first transmitting electrode and a current consumed in the receiving electrode when the pulse signal is applied only to the second transmitting electrode; and an arithmetic processing unit for determining whether an object to be detected is disposed on the electrode arrangement based on a detection result of the capacitance detection circuit.

[0011] Effects of the present invention

[0012] According to the above-described embodiments, an electrode device, a semiconductor device, and a semiconductor system capable of detecting an object to be detected with high accuracy can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic cross-sectional view illustrating an exemplary configuration of an electrode device according to the first embodiment.

[0014] Figure 2 It is shown that Figure 1 An exemplary configuration diagram of a semiconductor device showing an electrode device is shown.

[0015] Figure 3is a schematic cross-sectional view illustrating an exemplary configuration of an electrode device according to a second embodiment.

[0016] Figure 4 It is shown in Figure 3 A schematic cross-sectional view showing a state in which a sheet of paper is inserted between electrodes of the electrode device is shown.

[0017] Figure 5 It shows that Figure 3 A diagram showing an example configuration of a semiconductor system including an electrode device.

[0018] Figure 6 It shows Figure 3 A schematic cross-sectional view of a first modified example of the electrode arrangement is shown.

[0019] Figure 7 It shows Figure 3 A schematic cross-sectional view of a second modified example of the electrode arrangement is shown.

[0020] Figure 8 FIG. 1 is a diagram showing an application example of the semiconductor system according to the first embodiment.

[0021] Figure 9 is a schematic cross-sectional view showing a configuration example of an electrode device according to a concept prior to the first embodiment.

[0022] Figure 10 It is shown in Figure 9 A schematic cross-sectional view showing a state where a sheet of paper is inserted between the electrodes of the electrode device.

[0023] Figure 11 A diagram for explaining capacitance formed between electrodes. DETAILED DESCRIPTION

[0024] For the sake of clarity, the following description and drawings are omitted and simplified as appropriate. In addition, the functional block elements described in the drawings as being used to perform various processes can be configured as a CPU (central processing unit), a memory, and other circuits in hardware, and can be implemented by a program loaded into the memory in software. Therefore, it should be understood by those skilled in the art that these functional blocks can be implemented in various forms by separate hardware, separate software, or a combination thereof, and that the present invention is not limited to any one of them. In the drawings, the same elements are represented by the same reference numerals, and their repeated description is omitted when necessary.

[0025] Moreover, various types of non-transient computer-readable media can be used to store the above-mentioned program and provide it to the computer. Non-transient computer-readable media include various types of tangible storage media. Examples of non-transient computer-readable media include magnetic recording media (e.g., floppy disks, magnetic tapes, hard disk drives), magneto-optical recording media (e.g., magneto-optical disks), CD-ROMs (read-only memories, CD-Rs, CD-R / Ws), solid-state memories (e.g., mask ROMs, PROMs (programmable ROMs), EPROMs (erasable PROMs), flash ROMs, RAMs (random access memories)). The program can also be provided to the computer by various types of transient computer-readable media. Examples of transient computer-readable media include electrical signals, optical signals, and electromagnetic waves. Transient computer-readable media can provide the program to the computer via wired or wireless communication paths (such as wires and optical fibers).

[0026] First, refer to Figure 9 , the electrode device 60 previously studied by the present inventors will be described. Figure 9 is a schematic cross-sectional view showing a configuration example of an electrode device according to a concept prior to the first embodiment.

[0027] The electrode device 60 is used to detect mutual capacitance, and the capacitance between the electrodes is changed by inserting an object to be detected (e.g., a piece of paper) between the electrodes. A sensor using the electrode device 60 detects whether the object to be detected (e.g., a piece of paper) is inserted between the electrodes based on the capacitance change obtained from the electrode device 60. A detailed description will be given below.

[0028] like Figure 9 As shown, the electrode device 60 includes a transmitting electrode PX1 , a receiving electrode PR1 , and dielectric substrates 101 and 102 .

[0029] Specifically, transmitting electrode PX1 is provided on the main surface of dielectric substrate 101. Receiving electrode PR1 is provided on the main surface of dielectric substrate 102, facing dielectric substrate 101, such that receiving electrode PR1 faces transmitting electrode PX1 with a predetermined distance d therebetween. Dielectric substrates 101 and 102 are, for example, glass epoxy substrates. An electrostatic capacitor C1 is formed between transmitting electrode PX1 and receiving electrode PR1.

[0030] exist Figure 9 In the embodiment, a space region in which an object to be detected (such as paper) can be inserted is formed between the transmitting electrode PX1 and the receiving electrode PR1. Hereinafter, a case where the object to be detected is a sheet (paper) P1 will be exemplified.

[0031] Figure 10 1 is a schematic cross-sectional view showing a state in which the paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 60. Figure 10 As shown, if the thickness of the paper is d1 (< d), then in the space region with a distance d between the electrodes PX1 and PR1, a paper P1 with a dielectric constant different from that of air is inserted in the region corresponding to the thickness d1 to replace the air.

[0032] Now refer to Figure 11 , the capacitance C generated between the electrodes is generally expressed by the following equation (1). Where C is the capacitance value C of the electrostatic capacitance (capacitance, electrostatic capacitance, capacitance), d is the distance between the electrodes, k is the relative dielectric constant of the region between the electrodes, A is the electrode area, and ε0 is the electric constant.

[0033] C = k × ε0 × A / d ··· (1)

[0034] It can be seen from equation (1) that the capacitance C is proportional to the electrode area A, proportional to the relative dielectric constant k of the region between the electrodes, and inversely proportional to the distance d between the electrodes.

[0035] Therefore, when a paper P1 with a dielectric constant different from that of air is inserted between the electrodes, the capacitance value of the electrostatic capacitance C1 changes. The sensor using the electrode device 60 can detect whether the paper P1 is inserted between the electrodes based on the change in capacitance.

[0036] Here, assume that the thickness of the paper P1 is 90 μm and the dielectric constant of the paper P1 is twice that of the air dielectric constant. The change in the capacitance value of the capacitance C1 caused by the insertion of the paper P1 between the electrodes is equal to the change in the capacitance value when the distance d between the electrodes is shortened by 45 μm. Therefore, if the distance d between the electrodes fluctuates unintentionally due to slight vibrations, etc., the sensor using the electrode device 60 may erroneously detect that the paper P1 has been inserted between the electrodes.

[0037] Therefore, the electrode device 11, the control device (semiconductor device) 12, and the sensor system (semiconductor system) SYS1 according to the first embodiment that can solve this problem have been found.

[0038] First Embodiment

[0039] Figure 1 is a schematic cross-sectional view showing a configuration example of the electrode device 11 according to the first embodiment. The electrode device 11 is used to detect the capacitance of the mutual capacitance type, and the capacitance between the electrodes is changed by inserting an object to be detected (such as paper) between the electrodes. The sensor (control device 12 described later) using the electrode device 11 detects whether the object to be detected (such as paper) is inserted between the electrodes based on the capacitance change obtained from the electrode device 11. Specific descriptions will be given hereafter.

[0040] As Figure 1As shown, the electrode arrangement 11 includes two transmitting electrodes PX1 and PX2 , a receiving electrode PR1 , and dielectric substrates 101 and 102 .

[0041] Specifically, the transmitting electrode PX1 is provided on one main surface of the dielectric substrate 101, and the transmitting electrode PX2 is provided on the other main surface of the dielectric substrate 101. The receiving electrode PR1 is provided on the main surface of the dielectric substrate 102 that faces the dielectric substrate 101, so that the receiving electrode PR1 faces the transmitting electrode PX1 with a predetermined distance d therebetween, and the receiving electrode PR1 is provided facing the transmitting electrode PX2 with the transmitting electrode PX1 and the dielectric substrate 101 interposed therebetween. The dielectric substrates 101 and 102 are, for example, glass epoxy resin substrates.

[0042] A capacitor C1 is formed between the transmission electrode PX1 and the reception electrode PR1 , and a capacitor C2 is formed between the transmission electrodes PX1 and PX2 .

[0043] exist Figure 1 In the illustrated embodiment, a space region into which an object to be detected (such as paper) can be inserted is formed between the transmitting electrode PX1 and the receiving electrode PR1. Hereinafter, a case where the object to be detected is paper P1 will be exemplified.

[0044] On the other hand, a dielectric substrate 102 is provided between the radiating electrodes PX1 and PX2. Therefore, the distance and dielectric constant between the radiating electrodes PX1 and PX2 are fixed.

[0045] Calculation method of electrostatic capacitance C1

[0046] Next, a method of calculating the capacitance value of the electrostatic capacitance C1 of the electrode device 11 will be described. Here, a case will be described where the capacitance value of the capacitance C1 of the electrode device 11 is calculated by converting the capacitance value into the distance d between the transmission electrode PX1 and the reception electrode PR1.

[0047] First, when the capacitance value of the capacitor C1 between the transmitting electrode PX1 and the receiving electrode PR1 is Ca, and the capacitance value between the transmitting electrode PX2 and the receiving electrode PR1 is Cb, the following equations (2) and (3) are established. However, when an electric field is generated between the electrodes PX1 and PR1 (that is, when a voltage is applied between the electrodes PX1 and PR1), the transmitting electrode PX2 is set to the HiZ (high impedance state). When an electric field is generated between the electrodes PX2 and PR1 (that is, when a voltage is applied between the electrodes PX2 and PR1), the transmitting electrode PX1 is set to the HiZ state.

[0048] Equation 1

[0049]

[0050] Equation 2

[0051]

[0052] If I represents the current consumption (the current value of current I1 described later), F represents the operating frequency (the oscillation frequency of clock signal CLK1 described later), C represents the capacitance value, and V represents the inter-electrode voltage, then I = FCV. Therefore, when an electric field is generated between electrodes PX1 and PR1, current consumption I1a is expressed by the following equation (4) derived from equation (2). When an electric field is generated between electrodes PX2 and PR1, current consumption I1b is expressed by the following equation (5) derived from equation (3).

[0053] I1a=F·C1·V···(4)

[0054] Equation 3

[0055]

[0056] From equation (4) and equation (5), the following equation (6) holds.

[0057] Equation 4

[0058]

[0059] When equation (6) is transformed, it is expressed as equation (7).

[0060] Equation 5

[0061]

[0062] Equation 6

[0063]

[0064] I1a·C2=I1b·(C1+C2)

[0065] I1a·C2=I1b·C1+I1b·C2

[0066] (I1a-I1b)C2=I1b·C1

[0067] Equation 7

[0068]

[0069] here,

[0070] [Equation 8]

[0071]

[0072] The distance d is expressed by the following equation (8): Here, ε0 represents a dielectric constant, εr represents a relative dielectric constant of the inter-electrode region, S represents an electrode area, and d represents the inter-electrode distance.

[0073] Equation 9

[0074]

[0075] Equation 10

[0076]

[0077] Equation 11

[0078]

[0079] According to εr=1, the distance d is expressed by the following equation (9).

[0080] Equation 12

[0081]

[0082] As can be understood from equation (9), the distance d can be calculated by measuring the current value I1a and the current value I1b. According to the change in the calculation result of the distance d, the change in the capacitance value of the electrostatic capacitor C1 becomes clear. That is, according to the change in the calculation result of the distance d, the change amount of the capacitance value of the electrostatic capacitor C1 as the paper P1 is inserted between the electrodes PX1 and PR1 can be obtained. Therefore, the sensor using the electrode device 11 can accurately detect whether the paper P1 is inserted between the electrodes PX1 and PR1 based on the calculation result of the distance d. According to the improvement in detection accuracy, the sensor using the electrode device 11 can also determine the material of the paper P1 inserted between the electrodes PX1 and PR1.

[0083] Description of the sensor system SYS1 having the electrode arrangement 11

[0084] Then, Figure 2 is used to describe a sensor system having an electrode arrangement 11 . Figure 2 is a diagram showing an exemplary configuration of a sensor system (semiconductor system) SYS1 including an electrode device 11 .

[0085] like Figure 2As shown, the sensor system SYS1 includes an electrode device 11 and a control device (semiconductor device) 12. The control device 12 is a so-called microcomputer and has a sensor function for detecting whether a paper P1 is inserted between the electrodes of the electrode device 11 based on a change in the electrostatic capacitance C1 detected from the electrode device 11. In addition, the control device 12 can also have a sensor function for specifying the material of the inserted paper P1 based on the absolute capacitance value of the electrostatic capacitance C1 detected from the electrode device 11.

[0086] Specifically, the control device 12 includes a capacitance detection unit 13, an arithmetic processing unit (CPU) 14, and terminals TX1, TX2, and TR1. The capacitance detection unit 13 includes a current mirror 15, a switching circuit 16, a current-controlled oscillator circuit (CCO) 17, a counter 18, buffers B1 and B2, and a smoothing capacitor Cs. Buffers B1 and B2 form a pulse signal output circuit. Among the components of the capacitance detection unit 13, the capacitance detection circuit consists of components other than the pulse signal output circuit.

[0087] The transmitting electrode PX2 of the electrode arrangement 11 is connected to the terminal TX1. The transmitting electrode PX1 of the electrode arrangement 11 is connected to the terminal TX2. The receiving electrode PR1 of the electrode arrangement 11 is connected to the terminal TR1.

[0088] The power supply voltage drop circuit VDC includes a P-channel MOS transistor MP11 (hereinafter referred to as "transistor") and an amplifier AMP. Transistor MP11 has a source connected to the power supply voltage terminal VDD, a drain connected to the node NR, and a gate to which the output voltage of the amplifier AMP is applied. The amplifier AMP amplifies the potential difference between the voltage VDDR at the node NR and the reference voltage Vref and applies the amplified voltage to the gate of the transistor MP11. Specifically, the amplifier AMP controls the gate voltage of the transistor MP11 so that the voltage VDDR at the node NR equals the reference voltage Vref.

[0089] In transistor MP12, the source is connected to the power supply voltage terminal VDD, and the output voltage of the amplifier AMP is applied to the gate. That is, transistors MP11 and MP12 form a current mirror circuit. Therefore, the current I2 flowing between the source and drain of transistor MP12 is proportional to the current I1 flowing between the source and drain of transistor MP11. Depending on the design specifications, the current drive capability (transistor size) of each transistor MP11 and MP12 can be set to any value.

[0090] The switch circuit 16 includes switch elements SW1 and SW2. Switch element SW1 is provided between node NR and node NS and is turned on and off based on clock signal CLK1. Switch element SW2 is provided between node NS and ground voltage terminal GND and is turned on and off complementarily to switch element SW1 based on clock signal CLK1. Node NS is connected to terminal TR1.

[0091] For example, when clock signal CLK1 is at an L (low) level, switch element SW1 is turned on and switch element SW2 is turned off. Consequently, voltage VDDR at node NR is applied to terminal TR1. That is, voltage VDDR at node NR is applied to reception electrode PR1 via terminal TR1. Consequently, charge accumulates in reception electrode PR1.

[0092] On the other hand, when the clock signal CLK1 is at an H (high) level, the switch element SW1 is turned off and the switch element SW2 is turned on. Consequently, the ground voltage (ground potential) GND is applied to the terminal TR1. In other words, the ground voltage GND is applied to the reception electrode PR1 via the terminal TR1. Consequently, the charge accumulated in the reception electrode PR1 is discharged.

[0093] That is, the switch circuit 16 generates a drive pulse DRV obtained by inverting the logic level of the clock signal CLK1 , and applies the drive pulse DRV to the reception electrode PR1 through the terminal TR1 .

[0094] Buffer B1 is a so-called tri-state buffer and switches whether to output clock signal CLK1 as pulse signal PS1 or to set the output to the HiZ state. Buffer B2 is a so-called tri-state buffer and switches the output of clock signal CLK1 to pulse signal PS2 or to the HiZ state in a manner complementary to the output of buffer B1.

[0095] For example, when buffer B1 outputs clock signal CLK1 as pulse signal PS1, the output of buffer B2 is set to the HiZ state. Consequently, pulse signal PS1 is applied to transmitting electrode PX1. Meanwhile, transmitting electrode PX2 is set to the HiZ state. At this time, drive pulse DRV is applied to receiving electrode PR1. Consequently, an electric field is generated between transmitting electrode PX1 and receiving electrode PR1.

[0096] On the other hand, when buffer B2 outputs clock signal CLK1 as pulse signal PS2, the output of buffer B1 is set to the HiZ state. Consequently, pulse signal PS2 is applied to transmitting electrode PX2. Meanwhile, transmitting electrode PX1 is set to the HiZ state. At this time, drive pulse DRV is applied to receiving electrode PR1. Consequently, an electric field is generated between transmitting electrode PX2 and receiving electrode PR1.

[0097] Current mirror circuit 15 includes a power supply voltage drop circuit (constant voltage generator) VDC and a P-channel MOS transistor (hereinafter referred to as a transistor) MP12. Power supply voltage drop circuit VDC generates a voltage VDDR at node NR, obtained by stepping down power supply voltage VDD. Smoothing capacitor Cs, provided between node NR and ground voltage terminal GND, smoothes the charging current waveform generated by the switched capacitor filter of switch circuit 16 based on its detected capacitance and transmits the smoothed charging current waveform to current control oscillation circuit 17.

[0098] Current-controlled oscillator circuit 17 outputs clock signal CLK2, whose frequency corresponds to current I2, which is proportional to current I1. Current-controlled oscillator circuit 17 includes a ring oscillator and a buffer circuit. The ring oscillator comprises multiple inverter circuits whose delay times vary with current I2, connected in a ring. The buffer circuit amplifies the output of the inverter circuit in the final stage of the multiple inverter circuits and outputs the amplified output as clock signal CLK2. Counter 18 counts the number of oscillations of clock signal CLK2 per predetermined cycle and outputs a count value NC2.

[0099] For example, as the value of current I2 increases, the delay time of the inverter provided in current control oscillation circuit 17 decreases, causing the frequency of clock signal CLK2 to increase, and thus, count value NC2 to increase. On the other hand, when the value of current I2 decreases, the delay time of the inverter provided in current control oscillation circuit 17 increases, causing the frequency of clock signal CLK2 to decrease, and as a result, count value NC2 decreases.

[0100] The arithmetic processing unit 14 calculates the value of the current I1 based on the count value NC2 at this time. Specifically, the arithmetic processing unit 14 calculates the value (I1a) of the current I1 when an electric field is generated between the electrodes PX1 and PR1, and calculates the value (I1b) of the current I1 when an electric field is generated between the electrodes PX2 and PR1. The arithmetic processing unit 14 calculates the distance d by substituting the calculation results of the current values ​​I1a and I1b into the above equation (9). Here, the change in the capacitance value of the electrostatic capacitor C1 becomes clear according to the change in the calculation result of the distance d. Therefore, the arithmetic processing unit 14 can calculate the change in the capacitance value of the electrostatic capacitor C1 according to the change in the calculation result of the distance d, and the capacitance value changes as the paper P1 is inserted between the electrodes PX1 and PR1. That is, the arithmetic processing unit 14 can accurately detect whether the paper P1 is inserted between the electrodes PX1 and PR1 based on the calculation result of the distance d. The arithmetic processing unit 14 can also determine the material of the paper P1 inserted between the electrodes PX1 and PR1 from the calculation result of the distance d.

[0101] Sensor system SYS1 operation

[0102] Next, the operation of the sensor system SYS1 will be described.

[0103] First, the sensor system SYS1 measures the value of the current I1 (ie, the current value I1 a ) when an electric field is generated between the transmission electrode PX1 and the reception electrode PR1 provided in the electrode device 11 .

[0104] At this time, buffer B1 outputs clock signal CLK1 as pulse signal PS1, and buffer B2 sets its output to the HiZ state. Consequently, pulse signal PS1 is applied to transmitting electrode PX1. Meanwhile, transmitting electrode PX2 is set to the HiZ state. At this time, switch circuit 16 outputs a drive pulse DRV obtained by inverting the logic level of clock signal CLK1. Consequently, drive pulse DRV is applied to receiving electrode PR1. Consequently, an electric field is generated between transmitting electrode PX1 and receiving electrode PR1.

[0105] A change in the electrostatic capacitance C1 due to the paper P1 being inserted between the transmitting electrode PX1 and the receiving electrode PR1 appears as a change in the integrated value of the current I1 (I1a).

[0106] The current control oscillation circuit 17 outputs a clock signal CLK2 having a frequency corresponding to a current I2 proportional to the current I1. The counter 18 counts the number of oscillations of the clock signal CLK2 per a predetermined period and outputs a count value NC2.

[0107] The arithmetic processing unit 14 calculates the value of the current I1 (ie, the current value I1 a ) at this time based on the count value NC2 when the electric field is generated between the transmission electrode PX1 and the reception electrode PR1 .

[0108] Next, the sensor system SYS1 measures the value of the current I1 (ie, the current value I1 b ) when an electric field is generated between the transmission electrode PX2 and the reception electrode PR1 provided in the electrode device 11 .

[0109] At this time, buffer B1 sets its output to the HiZ state, and buffer B2 outputs the clock signal CLK1 as a pulse signal PS2. Consequently, transmitting electrode PX1 is set to the HiZ state. Meanwhile, pulse signal PS2 is applied to transmitting electrode PX2. At this time, switch circuit 16 outputs a drive pulse DRV obtained by inverting the logic level of clock signal CLK1. Consequently, drive pulse DRV is applied to receiving electrode PR1. Consequently, an electric field is generated between transmitting electrode PX2 and receiving electrode PR1.

[0110] A change in the electrostatic capacitance C2 due to the paper P1 being inserted between the transmitting electrode PX1 and the receiving electrode PR1 appears as a change in the integrated value of the current I1 ( I1 b ).

[0111] The current control oscillation circuit 17 outputs a clock signal CLK2 having a frequency corresponding to a current I2 proportional to the current I1. The counter 18 counts the number of oscillations of the clock signal CLK2 per a predetermined period and outputs a count value NC2.

[0112] The arithmetic processing unit 14 calculates the value of the current I1 at this time (ie, the current value I1 b ) based on the count value NC2 when the electric field is generated between the transmission electrode PX2 and the reception electrode PR1 .

[0113] Thereafter, the arithmetic processing unit 14 calculates the distance d by substituting the calculation results of the current values ​​I1a and I1b into the above equation (9). Here, the change in the capacitance value of the electrostatic capacitor C1 becomes clear according to the change in the calculation result of the distance d. Therefore, the arithmetic processing unit 14 can calculate the change in the capacitance value of the electrostatic capacitor C1 based on the change in the calculation result of the distance d, which changes as the paper P1 is inserted between the electrodes PX1 and PR1. That is, the arithmetic processing unit 14 can accurately detect whether the paper P1 is inserted between PX1 and PR1 through the calculation result of the distance d, and the arithmetic processing unit 14 can also determine the material of the paper P1 inserted between PX1 and PR1 based on the improvement in detection accuracy.

[0114] As described above, the electrode device 11 according to this embodiment includes a receiving electrode PR1, transmitting electrodes PX1 and PX2 arranged facing receiving electrode PR1, and a dielectric substrate 101 disposed between transmitting electrodes PX1 and PX2. The sensor system SYS1 then calculates the change in capacitance C1 based on the current consumption value I1a when an electric field is generated between electrodes PX1 and PR1, and the current consumption value I1b when an electric field is generated between electrodes PX2 and PR1. Consequently, the sensor system SYS1 can accurately detect whether a sheet of paper P1 is inserted between electrodes PX1 and PR1. This improved detection accuracy allows the control device 12 to determine the material of the sheet of paper P1 inserted between the PX1 and PR1 electrodes.

[0115] In this embodiment, the pulse signal applied to the transmitting electrodes PX1 and PX2 and the drive pulse DRV applied to the receiving electrode PR1 have opposite phases, but the present invention is not limited to this. The pulse signal applied to the transmitting electrodes PX1 and PX2 and the drive pulse DRV applied to the receiving electrode PR1 may be in phase with each other. Alternatively, the difference between each of the anti-phase and in-phase current values ​​I1a and the difference between each of the anti-phase and in-phase current values ​​I1b can be used to measure the change in the capacitance value of the electrostatic capacitor C1. Therefore, the reactive current component included in each of the currents I1a and I1b caused by other external components (such as parasitic capacitance) other than the transmitting and receiving electrodes is eliminated, thereby improving the measurement accuracy of the change in the capacitance value of the electrostatic capacitors C1 and C2 between the transmitting electrodes PX1 and PX2 and the receiving electrode PR1.

[0116] While this embodiment describes a case where the output of buffer B2 is set to the HiZ state when buffer B1 outputs pulse signal PS1, the present invention is not limited to this case. When buffer B1 outputs pulse signal PS1, buffer B2 can output pulse signal PS2 in phase with pulse signal PS1. At this time, since the potential difference between electrodes PX1 and PX2 is essentially 0V, interference between the electric field generated between electrodes PX1 and PX2 and the electric field generated between electrodes PX1 and PX2 is suppressed to a negligible level.

[0117] In this embodiment, the control device 12 measures the current consumption value when an electric field is generated between electrodes PX1 and PR1, and the current consumption value when an electric field is generated between electrodes PX2 and PR1, and calculates the change in the capacitance value of electrostatic capacitor C1 based on the measurement results. However, the present invention is not limited to this example. For example, the control device 12 may be configured to measure the inter-electrode voltage when an electric field is generated between electrodes PX1 and PR1, and the inter-electrode voltage when an electric field is generated between electrodes PX2 and PR1, and calculate the change in the capacitance value of electrostatic capacitor C1 based on the measurement results.

[0118] In addition, in this embodiment, the control device 12 detects whether the paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 11, but the present invention is not limited to this. The control device 12 can also detect a touch on the electrode PX1 or the electrode PR1, which causes a change in the distance d between the electrodes PX1 and PR1 of the electrode device 11.

[0119] Second embodiment

[0120] Figure 3It is a schematic cross-sectional view showing a configuration example of the electrode device 21 according to the second embodiment. Compared with the electrode device 60, the electrode device 21 further includes a reference electrode pair composed of a transmitting electrode PXr and a receiving electrode PRr. Specific descriptions will be given hereinafter.

[0121] As Figure 3 shown, the electrode device 21 includes a transmitting electrode PX1, a receiving electrode PR1, a transmitting electrode PXr, a receiving electrode PRr, and dielectric substrates 101 and 102. The transmitting electrode PX1 and the receiving electrode PR1 form a first electrode pair, between which an object to be detected (such as paper) can be inserted. The transmitting electrode PXr and the receiving electrode PRr form a reference electrode pair.

[0122] Specifically, the transmitting electrodes PX1 and PXr are arranged on one main surface of the dielectric substrate 101. The receiving electrodes PR1 and PRr are arranged on the main surface of the dielectric substrate 102 that faces the dielectric substrate 101 at a predetermined distance d facing the transmitting electrodes PX1 and PXr. Here, the first electrode pair and the reference electrode pair are arranged adjacent to each other so that the influence of the electric field can be ignored. The dielectric substrates 101 and 102 are, for example, glass epoxy substrates.

[0123] A capacitance C1 is formed between the transmitting electrode PX1 and the receiving electrode PR1. A capacitance Crf is formed between the emitter PXr and the receiver PRr.

[0124] In Figure 3 it, a space region is formed between the transmitting electrode PX1 and the receiving electrode PR1 in which an object to be detected (such as paper) can be inserted. Hereinafter, the case where the object to be detected is a paper (sheet) P1 will be exemplified. On the other hand, an object to be detected such as paper may not be inserted between the transmitting electrode PXr and the receiving electrode PRr.

[0125] Figure 4 It is a schematic cross-sectional view showing the case where the paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 11. As Figure 4 shown, if the thickness of the paper is d1 (<d), then in the region corresponding to the thickness d1 in the space region with a distance d between the electrodes PX1 and PR1, the paper P1 with a dielectric constant different from that of air is inserted instead of air. Therefore, the capacitance value of the capacitance C1 between the electrodes PX1 and PR1 changes.

[0126] Here, assuming that the thickness of paper P1 is 90 μm and that the dielectric constant of paper P1 is twice that of air, the change in the capacitance value of electrostatic capacitor C1 due to the insertion of paper P1 between electrodes PX1 and PR1 is equivalent to the change in the capacitance value of electrostatic capacitor C1 when the distance d between the electrodes is shortened by 45 μm. In other words, the capacitance value of electrostatic capacitor C1 formed between electrodes PX1 and PR1 is not limited to the case where paper P1 is inserted between electrodes PX1 and PR1, and the capacitance value changes even when the distance d between the electrodes fluctuates.

[0127] On the other hand, when paper P1 is inserted between electrodes PX1 and PR1, the capacitance value of electrostatic capacitance Crf formed between electrodes PXr and PRr does not change, but when the distance d between the electrodes changes, the capacitance value of electrostatic capacitance Crf changes together with the capacitance value of electrostatic capacitance C1.

[0128] Therefore, by subtracting the capacitance value of the electrostatic capacitance Crf from the capacitance value of the electrostatic capacitance C1 and removing the variation component of the electrostatic capacitance C1 caused by the variation of the distance d between the electrodes, the change in the capacitance value of the electrostatic capacitance C1 caused by inserting the paper P1 between the electrodes PX1 and PR1 can be obtained.

[0129] Therefore, the electrode device 21 according to this embodiment includes a first electrode pair capable of inserting a sheet of paper P1 between the electrodes and a corresponding reference electrode pair. Here, by subtracting the capacitance value of the reference electrode pair's capacitance Crf from the capacitance value of the first electrode pair's capacitance C1, the variation component of capacitance C1 caused by variations in inter-electrode distance d can be removed. Therefore, a sensor using electrode device 21 can accurately detect whether paper P1 is inserted between electrodes PX1 and PR1 by calculating the change in capacitance C1 based on the difference in current consumption when an electric field is generated in each of the first and reference electrode pairs. The sensor using electrode device 21 can also determine the material of paper P1 inserted between electrodes PX1 and PR1 based on improved detection accuracy.

[0130] Description of the sensor system SYS2 having the electrode arrangement 21

[0131] Next, the sensor system SYS2 including the electrode device 21 will be described. Figure 5 is a diagram showing an exemplary configuration of a sensor system (semiconductor system) SYS2 including an electrode device 21 .

[0132] like Figure 5As shown, the sensor system SYS2 includes an electrode device 21 and a control device (semiconductor device) 22. The control device 22 includes a capacitance detector 23, an arithmetic processing unit (CPU) 14, and terminals TX1, TR1, and TRr. Transmitting electrodes PX1 and PXr of the electrode device 21 are connected to the terminal TX1. Receiving electrode PR1 of the electrode device 21 is connected to the terminal TR1. Receiving electrode PRr of the electrode device 21 is connected to the terminal TRr.

[0133] Compared with the capacitance detection unit 13, the capacitance detection unit 23 includes only the buffer B1 of the buffers B1 and B2 and further includes a switch circuit SW3. The switch circuit SW3 selectively outputs the drive pulse DRV output from the switch circuit 16 to either terminal TR1 or TRr.

[0134] The remaining configuration of the capacitance detection unit 23 is the same as that of the capacitance detection unit 13 , and thus a description thereof is omitted.

[0135] Sensor system SYS2 operation

[0136] Next, the operation of sensor system SYS2 will be described. First, sensor system SYS2 measures the value of current I1 (current value I1c) when an electric field is generated between transmitting electrode PX1 and receiving electrode PR1 provided in electrode arrangement 21. At this time, buffer B1 outputs clock signal CLK1 as pulse signal PS1 to terminal TX1. Consequently, pulse signal PS1 is applied to transmitting electrode PX1. Switch circuit SW3 outputs drive pulse DRV, output from switch circuit 16, to terminal TR1. Consequently, drive pulse DRV is applied to receiving electrode PR1. Consequently, an electric field is generated between transmitting electrode PX1 and receiving electrode PR1.

[0137] A change in the electrostatic capacitance C1 due to the paper P1 being inserted between the transmitting electrode PX1 and the receiving electrode PR1 or an unintentional change in the distance d between the electrodes appears as an integrated change in the current I1 ( I1c ).

[0138] The current control oscillation circuit 17 outputs a clock signal CLK2 having a frequency corresponding to a current I2 proportional to the current I1. The counter 18 counts the number of oscillations of the clock signal CLK2 per a predetermined period and outputs a count value NC2.

[0139] The arithmetic processing unit 14 calculates the value of the current I1 at this time (ie, the current value I1 c ) based on the count value NC2 when the electric field is generated between the emitter electrode PX1 and the receiving electrode PR1 .

[0140] Next, the sensor system SYS2 measures the value of current I1 (current value I1r) when an electric field is generated between the transmitting electrode PXr and the receiving electrode PRr provided in the electrode arrangement 21. At this time, the buffer B1 outputs the clock signal CLK1 as a pulse signal PS1 to the terminal TX1. Therefore, the pulse signal PS1 is applied to the transmitting electrode PXr. The switch circuit SW3 outputs the drive pulse DRV output from the switch circuit 16 to the terminal TRr. Therefore, the drive pulse DRV is applied to the receiving electrode PRr. Consequently, an electric field is generated between the transmitting electrode PXr and the receiving electrode PRr.

[0141] Here, the change in electrostatic capacitance Crf due to the unintentional change in the inter-electrode distance d appears as an integrated change in the current I1 ( I1r ).

[0142] The current control oscillation circuit 17 outputs a clock signal CLK2 having a frequency corresponding to a current I2 proportional to the current I1. The counter 18 counts the number of oscillations of the clock signal CLK2 per a predetermined period and outputs a count value NC2.

[0143] The arithmetic processing unit 14 calculates the value of the current I1 at this time (ie, the current value I1 r ) based on the count value NC2 when the electric field is generated between the transmission electrode PXr and the reception electrode PRr.

[0144] Thereafter, arithmetic processing unit 14 subtracts current value I1r from current value I1c to remove the component of the change in current value caused by the unintentional change in inter-electrode distance d. Based on the change in current value I1c - I1r, the change in the capacitance value of electrostatic capacitor C1 becomes clear. Therefore, arithmetic processing unit 14 can calculate the change in capacitance value of electrostatic capacitor C1 as paper P1 is inserted between electrodes PX1 and PR1. In other words, arithmetic processing unit 14 can accurately detect whether paper P1 is inserted between electrodes PX1 and PR1 based on the change in current value I1c - I1r. Based on the improved detection accuracy, arithmetic processing unit 14 can also determine the material of paper P1 inserted between electrodes PX1 and PR1.

[0145] Therefore, the electrode device 21 according to this embodiment includes a first electrode pair, between which a sheet of paper P1 can be inserted, and a corresponding reference electrode pair. Next, the sensor system SYS2 calculates the change in capacitance C1 based on the difference between the current consumption value I1c when an electric field is generated in the first electrode pair and the current consumption value I1r when an electric field is generated in the reference electrode pair. Thus, the sensor system SYS1 can eliminate the change in capacitance C1 caused by unintentional changes in the inter-electrode distance d and, therefore, accurately detect whether a sheet of paper P1 is inserted between electrodes PX1 and PR1. The control device 12 can also determine the material of the sheet of paper P1 inserted between electrodes PX1 and PR1.

[0146] In this embodiment, the pulse signal applied to the transmitting electrode PX1 and the drive pulse DRV applied to the receiving electrode PR1 have opposite phases, but the present invention is not limited thereto. The pulse signal applied to the transmitting electrode PX1 and the drive pulse DRV applied to the receiving electrode PR1 may be in phase. Alternatively, the change in capacitance of the electrostatic capacitor C1 may be measured using the difference between the current values ​​I1c of opposite phase and the current values ​​I1r of opposite phase and the current values ​​I1r of opposite phase. This eliminates the fluctuation component of the reactive current included in the currents I1c and I1r, improving the measurement accuracy of the change in capacitance of the electrostatic capacitor C1.

[0147] While this embodiment describes the case where the current consumption value I1c when an electric field is generated in the first electrode pair and the current consumption value I1r when an electric field is generated in the reference electrode pair are alternately measured, the present invention is not limited to this case. By providing separate current supply paths for the first electrode pair and the reference electrode pair, the current consumption values ​​I1c and I1r can be measured in parallel.

[0148] In this embodiment, the control device 22 measures the current consumption value when an electric field is generated between the electrodes PX1 and PR1, and the current consumption value when an electric field is generated between the electrodes PXr and PRr, and calculates the change in the capacitance value of the electrostatic capacitor C1 based on the measurement results. However, this is not limited to this. For example, the control device 22 may be configured to measure the inter-electrode voltage when an electric field is generated between the electrodes PX1 and PR1, and the inter-electrode voltage when an electric field is generated between the electrodes PXr and PRr, and calculate the change in the capacitance value of the electrostatic capacitor C1 based on the measurement results.

[0149] Furthermore, in this embodiment, the control device 22 detects whether the paper P1 is inserted between the electrodes PX1 and PR1 of the electrode device 21, but the present invention is not limited thereto. The control device 22 may also detect contact with the electrode PX1 or the electrode PR1, which causes a change in the distance d between the electrodes PX1 and PR1 of the electrode device 21. However, in this case, the electrode device 21 needs to be configured so that the distance between the electrodes PXr and PRr does not change due to contact with the electrodes PX1 or PR1.

[0150] First Modification of Second Embodiment

[0151] Figure 6 1 is a schematic cross-sectional view showing a first modification of the electrode device 21, which is an electrode device 21a. Figure 6 As shown, compared with electrode device 21, electrode device 21a includes a solid dielectric layer 103 between the reference electrode and the counter electrode, rather than a space region. The remaining structure of electrode device 21a is the same as that of electrode device 21, and thus its description is omitted.

[0152] The electrode device 21 a can prevent the paper P1 from being inserted between the electrodes of the reference electrode pair by providing a solid dielectric layer 103 between the electrodes of the reference electrode pair.

[0153] Second Modification of Second Embodiment

[0154] Figure 7 2 is a schematic cross-sectional view showing a second modification of the electrode device 21, which is an electrode device 21b. Figure 7 As shown, compared to electrode arrangement 21a, electrode arrangement 21b includes two pairs of reference electrodes instead of one pair of reference electrodes.

[0155] The first reference electrode pair includes electrodes PXra and PRra corresponding to electrodes PXr and PRr and dielectric layer 103a corresponding to dielectric layer 103. The second reference electrode pair includes electrodes PXrb and PRrb corresponding to electrodes PXr and PRr and dielectric layer 103b corresponding to dielectric layer 103.

[0156] The first and second reference electrode pairs are arranged, for example, to sandwich the area where the paper P1 is inserted. The remaining structure of the electrode device 21b is the same as that of the electrode device 21, and thus description thereof is omitted.

[0157] The electrode device 21b is as effective as the electrode device 21a. In addition, the electrode device 21b can suppress the variation in the distance change between the first electrode pair and the variation in the distance change between the first and second reference electrode pairs.

[0158] Third embodiment

[0159] This embodiment describes an application example of the sensor system SYS1. Figure 8 is a diagram showing an application example of the sensor system SYS1. Figure 8 In the example, the sensor system SYS1 is applied to the copier M1. Figure 8 In the embodiment, the control device 22 further includes a machine learning unit 19.

[0160] The machine learning unit 19 learns the difference in the detection result output from the capacitance detection unit 13 according to the type of paper P1 used in the copy machine M1. The arithmetic processing unit 14 instructs various devices to perform processing according to the type of paper P1 predicted by the learning result of the machine learning unit 19.

[0161] Here, the dielectric constant of paper P1 changes depending on its moisture content. Therefore, once the type of paper P1 used in copier M1 is determined, arithmetic processing unit 14 can estimate the moisture content of paper P1 based on the dielectric constant of the paper P1 used in copier M1. For example, based on the estimated value, arithmetic processing unit 14 instructs a heater installed in copier M1 on the drying temperature and time for paper P1. This effectively suppresses curling of paper P1, thereby eliminating issues such as paper jams in copier M1.

[0162] In this embodiment, the sensor system SYS1 is applied to the copy machine M1, but the present invention is not limited thereto. Of course, the sensor system SYS2 can be applied to the copy machine M1.

[0163] Although the inventor's invention has been specifically described based on the embodiment, the present invention is not limited to the embodiment that has been described, and it goes without saying that various modifications can be made without departing from the gist of the present invention.

[0164] For example, in the above-described embodiments of the semiconductor device, the conductivity type (p-type or n-type) of the semiconductor substrate, the semiconductor layer, the diffusion layer (diffusion region), etc. can be reversed. Therefore, if one of the conductivity types, n-type or p-type, is a first conductivity type and the other conductivity type is a second conductivity type, the first conductivity type can be p-type and the second conductivity type can be n-type, or conversely, the first conductivity type can be n-type and the second conductivity type can be p-type.

[0165] A part or all of the above-described embodiments may be described as the following additional expressions, but the present invention is not limited thereto.

[0166] (Additional Statement 1) An electrode device for mutual capacitance type capacitance detection, comprising:

[0167] a first electrode pair allowing placement of an object to be detected; and

[0168] A reference electrode pair, provided corresponding to the first electrode pair,

[0169] wherein the first electrode pair comprises a first transmitting electrode and a first receiving electrode arranged at a predetermined interval facing the first transmitting electrode, and

[0170] The reference electrode pair includes:

[0171] a second emitting electrode disposed on the first substrate, and a first emitting electrode disposed on the substrate; and

[0172] The second receiving electrode is arranged on the second substrate at a predetermined interval facing the second transmitting electrode, and the first transmitting electrode is arranged on the second substrate.

[0173] (Additional Statement 2) The electrode device according to Additional Statement 1, wherein a spatial region into which the object can be inserted is formed between the first transmitting electrode and the first receiving electrode in the first electrode pair.

[0174] (Additional statement 3) An electrode device according to Additional statement 2, wherein whether an object has been inserted between the first transmitting electrode and the first receiving electrode is determined based on a calculation result of the capacitance between the first transmitting electrode and the first receiving electrode; and the calculation result of the capacitance is calculated using a difference between a consumption current value when a first electric field is generated between the first transmitting electrode and the first receiving electrode and a consumption current value when a second electric field is generated between the second transmitting electrode and the second receiving electrode.

[0175] (Additional Statement 4) The apparatus according to Additional Statement 2, wherein the object to be detected is a paper.

[0176] (Additional statement 5) An electrode device according to Additional statement 1, wherein whether there is contact with the object that causes a change in the distance between the first transmitting electrode and the first receiving electrode is determined based on a capacitance calculation result between the first transmitting electrode and the first receiving electrode; and the calculation result is calculated using a difference between a consumption current value when a first electric field is generated between the first transmitting electrode and the first receiving electrode and a consumption current value when a second electric field is generated between the second transmitting electrode and the second receiving electrode.

[0177] (Additional Statement 6) The electrode device according to Additional Statement 1, wherein the reference electrode pair is provided adjacent to the first electrode pair.

[0178] (Additional Statement 7) The electrode device according to Additional Statement 1, wherein the reference electrode pair further includes a solid dielectric layer formed between the second transmitting electrode and the second receiving electrode.

[0179] (Additional Statement 8) The electrode device according to Additional Statement 7,

[0180] wherein the reference electrode pair comprises a first reference electrode pair and a second reference electrode pair, and

[0181] The first electrode pair is arranged between the first reference electrode pair and the second reference electrode pair.

[0182] (Additional Statement 9) A semiconductor system includes:

[0183] electrode assembly; and

[0184] semiconductor devices,

[0185] The electrode device includes:

[0186] A first electrode pair includes a first transmitting electrode and a first receiving electrode arranged at a predetermined interval facing the first transmitting electrode; the first electrode pair is configured to be set for an object to be detected;

[0187] A first reference electrode pair comprising:

[0188] a second emitting electrode disposed on the first substrate; a first emitting electrode disposed on the first substrate, and

[0189] a second receiving electrode arranged on the second substrate opposite to the second transmitting electrode at a predetermined interval; and a first receiver arranged on the second substrate;

[0190] The semiconductor devices include:

[0191] a pulse signal output circuit for outputting a pulse signal to each of the first emitting electrode and the second emitting electrode;

[0192] a capacitance detection circuit for calculating an amount of change in capacitance between the first transmitting electrode and the first receiving electrode; calculating the amount of change in capacitance based on a current consumed at the first receiving electrode when a pulse signal is applied to the first transmitting electrode and a current consumed at the second receiving electrode when a pulse signal is applied to the second transmitting electrode, and

[0193] An arithmetic processing unit is configured to determine whether the object is placed on the first electrode pair of the electrode device based on a detection result of the capacitance detection circuit.

[0194] (Additional Statement 10) The semiconductor system according to Additional Statement 9,

[0195] wherein a spatial region into which an object can be inserted is formed between the first transmitting electrode and the first receiving electrode, and

[0196] The arithmetic processing unit is configured to determine whether the object is inserted between the first transmitting electrode and the first receiving electrode based on a detection result of the capacitance detection circuit.

[0197] (Additional Statement 11) The semiconductor system according to Additional Statement 9, wherein the arithmetic processing unit is configured to determine whether there is a touch to the object causing a change in the distance between the first transmitting electrode and the first receiving electrode based on a detection result of the capacitance detection circuit.

[0198] (Additional statement 12) A semiconductor system according to additional statement 9, wherein the arithmetic processing unit is configured to determine whether the object is set on the first electrode pair of the electrode device, and determine the processing for the object based on the judgment of whether the object is set on the first electrode pair of the electrode device.

[0199] (Additional statement 13) The semiconductor system according to Additional statement 12 further includes a machine learning unit for machine learning the detection results of the capacitance detection circuit according to the difference in object type, wherein the arithmetic processing unit is configured to determine the processing for the object according to the type of the object; and the processing is predicted by the machine learning unit based on the learning result.

[0200] (Additional statement 14) An electrode device for mutual capacitance type capacitance detection, comprising:

[0201] receiving electrodes;

[0202] A first transmitting electrode is arranged to face the receiving electrode;

[0203] a second transmitting electrode disposed opposite the receiving electrode such that the first transmitting electrode is interposed between the second transmitting electrode and the receiving electrode; and

[0204] A dielectric substrate is provided between the first radiating electrode and the second radiating electrode to fix a distance and a dielectric constant between the first radiating electrode and the second radiating electrode.

[0205] (Additional Statement 15) The electrode device according to Additional Statement 14, wherein a spatial region into which the object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode.

[0206] (Additional Statement 16) The electrode device according to Additional Statement 15,

[0207] wherein based on the calculation result of the capacitance between the first transmitting electrode and the receiving electrode, a value converted into the distance between the first transmitting electrode and the receiving electrode is calculated, the calculation result of the capacitance is calculated by using a consumption current value when a first electric field is generated between the first transmitting electrode and the receiving electrode and a consumption current value when a second electric field is generated between the second transmitting electrode and the receiving electrode including the dielectric substrate, and

[0208] According to the calculation result converted into the value of the distance between the first transmitting electrode and the receiving electrode, it is determined whether the detection object has been inserted between the first transmitting electrode and the receiving electrode or the material of the object is specifically described.

Claims

1. An electrode device for mutual capacitance type capacitance detection, comprising: receiving electrodes; a first transmitting electrode, arranged opposite to the receiving electrode; a second transmitting electrode, disposed opposite to the receiving electrode, such that the first transmitting electrode is interposed between the second transmitting electrode and the receiving electrode; as well as a dielectric substrate disposed between the first emitting electrode and the second emitting electrode and configured to fix a distance and a dielectric constant between the first emitting electrode and the second emitting electrode, wherein a space region in which an object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode, and wherein based on a calculation result of the capacitance between the first transmitting electrode and the receiving electrode, determining whether the object to be detected is inserted between the first transmitting electrode and the receiving electrode; The calculation result is calculated by using a first consumption current value when a first electric field is generated between the first transmitting electrode and the receiving electrode and a second consumption current value when a second electric field is generated between the second transmitting electrode and the receiving electrode. The electrode device according to claim 1 , wherein the object to be detected is paper.

3. The electrode device according to claim 1 , wherein whether there is contact with the object to be detected that causes a change in the distance between the first transmitting electrode and the receiving electrode is determined based on the calculation result of the capacitance; and the calculation result is calculated by using a first consumption current value when a first electric field is generated between the first transmitting electrode and the receiving electrode and a second consumption current value when a second electric field is generated between the second transmitting electrode and the receiving electrode. The device of claim 1 , wherein the dielectric substrate is a glass epoxy substrate.

5. A semiconductor device comprising: An electrode device comprising: receiving electrodes; A first transmitting electrode is arranged facing the receiving electrode; a second transmitting electrode disposed facing the receiving electrode, with the first transmitting electrode interposed between the second transmitting electrode and the receiving electrode; and a dielectric substrate, for fixing the distance and dielectric constant between the first emitting electrode and the second emitting electrode, wherein the dielectric substrate is disposed between the first emitting electrode and the second emitting electrode; a pulse signal output circuit configured to selectively output a pulse signal to any one of the first emitting electrode and the second emitting electrode, a capacitance detection circuit that calculates a capacitance change between the first transmitting electrode and the receiving electrode based on a first consumption current consumed by the receiving electrode when the pulse signal is applied to the first transmitting electrode and a second consumption current consumed by the receiving electrode when the pulse signal is applied only to the second transmitting electrode; and an arithmetic processing unit that determines whether a detection target is set on the electrode device based on a detection result of the capacitance detection circuit.

6. The semiconductor device according to claim 5, wherein a space region into which an object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode; and wherein the arithmetic processing unit determines whether the object is inserted between the first transmitting electrode and the receiving electrode based on a detection result obtained by the capacitance detection circuit. 7 . The semiconductor device according to claim 6 , wherein the arithmetic processing unit determines whether the object is touched based on a detection result obtained by the capacitance detection circuit, the object being touched causing a change in the distance between the first transmitting electrode and the receiving electrode. 8 . The semiconductor device according to claim 5 , wherein the pulse signal output circuit is configured to set the first emitter electrode to a high impedance state when outputting the pulse signal to the second emitter electrode. 9 . The semiconductor device according to claim 5 , wherein the pulse signal output circuit is configured to set the second emitter electrode to a high impedance state when outputting the pulse signal to the first emitter electrode. 10 . The semiconductor device according to claim 5 , wherein the pulse signal output circuit is configured to output the pulse signal to the second emitter electrode in addition to outputting the pulse signal to the first emitter electrode when the pulse signal is output to the first emitter electrode.

11. The semiconductor device according to claim 6, wherein the pulse signal output circuit is configured to output the pulse signal according to a first clock signal, The capacitance detection circuit includes: A constant voltage generating circuit, used for generating a constant voltage; a switching circuit for switching between applying the constant voltage to the receiving electrode and discharging the accumulated charge in the receiving electrode based on the first clock signal; a current-controlled oscillation circuit for generating a second clock signal when the constant voltage is applied to the receiving electrode, the second clock signal having a frequency according to a current flowing from the constant voltage generating circuit to the switching circuit; as well as a counter for counting the number of oscillations of each predetermined period of the second clock signal, and wherein the arithmetic processing unit is configured to determine whether the object is placed on the electrode device based on a count value of the counter.

12. A semiconductor system comprising: Electrode device; and semiconductor devices, Wherein the electrode device comprises: receiving electrodes; a first transmitting electrode, arranged opposite to the receiving electrode; a second transmitting electrode disposed opposite to the receiving electrode, such that the first transmitting electrode is interposed between the second transmitting electrode and the receiving electrode; and a dielectric substrate for fixing the distance and dielectric constant between the first emitting electrode and the second emitting electrode; The semiconductor device comprises: a pulse signal output circuit, configured to selectively output a pulse signal to any one of the first emitting electrode and the second emitting electrode; a capacitance detection circuit for calculating a capacitance change between the first transmitting electrode and the receiving electrode based on a first consumption current consumed in the receiving electrode when the pulse signal is applied to the first transmitting electrode and a second consumption current consumed in the receiving electrode when the pulse signal is applied only to the second transmitting electrode; and An arithmetic processing unit is used to determine whether the object to be detected is set on the electrode device based on the detection result of the capacitance detection circuit.

13. The semiconductor system according to claim 12, wherein a space region in which the object to be detected can be inserted is formed between the first transmitting electrode and the receiving electrode, and The processing unit is configured to determine whether the object is inserted between the first transmitting electrode and the receiving electrode based on the detection result of the capacitance detection circuit. 14 . The semiconductor system according to claim 12 , wherein the arithmetic processing unit is configured to determine whether there is contact with the object that causes a change in the distance between the first transmitting electrode and the receiving electrode based on a detection result of the capacitance detection circuit. 15 . The semiconductor system according to claim 12 , wherein the pulse signal output circuit is configured to set the first emitter electrode to a high impedance state when outputting the pulse signal to the second emitter electrode. 16 . The semiconductor system according to claim 12 , wherein the pulse signal output circuit is configured to set the second emitter electrode to a high impedance state when outputting the pulse signal to the first emitter electrode. 17 . The semiconductor system according to claim 12 , wherein the arithmetic processing unit is configured to determine a determination result as to whether the object is disposed on the electrode device, and determine a process for the object based on the determination result.

18. The semiconductor system according to claim 17, further comprising: a machine learning unit configured to learn a difference in a detection result of the capacitance detection circuit according to a type of the object; as well as The arithmetic processing unit is configured to determine processing for the object according to the type of the object; The processing is predicted by the machine learning unit based on the learning result.

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