Semiconductor device manufacturing method, substrate processing method, substrate processing device and storage medium

Abstract

The method comprises: preparing a substrate in a processing chamber; and forming a film on the substrate by supplying an inert gas from a first supply unit, supplying a first processing gas from a second supply unit, and supplying an inert gas from a third supply unit disposed on the opposite side of the first supply unit with a straight line passing through the center of the second supply unit and the substrate. In the film forming step, the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the third supply unit is controlled.

Description

Technical Field

[0001] The invention relates to a method for manufacturing a semiconductor device, a substrate processing device and a storage medium. Background Art

[0002] There is a case where a process of forming a film on a substrate is performed as one of the steps in the manufacturing process of a semiconductor device (for example, refer to Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-118462 Summary of the invention

[0006] Problems to be solved by the invention

[0007] An object of the present invention is to provide a technique capable of controlling the film thickness distribution within a substrate surface of a film formed on a substrate.

[0008] Solutions to Solve Problems

[0009] According to one solution of the present invention, the following technology can be provided, which has:

[0010] The process of preparing a substrate within a processing chamber; and

[0011] The process of supplying an inert gas from a first supply unit, supplying a first processing gas from a second supply unit, and supplying an inert gas from a third supply unit disposed on the opposite side of the first supply unit with a straight line passing through the second supply unit and the center of the substrate sandwiched between the first supply unit and the third supply unit to form a film on the substrate in the process chamber,

[0012] In the step of forming the film, a balance between a flow rate of the inert gas supplied from the first supply unit and a flow rate of the inert gas supplied from the third supply unit is controlled to adjust a film thickness distribution within a substrate surface of the film.

[0013] Effects of the Invention

[0014] According to the present invention, it is possible to control the film thickness distribution within the substrate surface of a film formed on a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus applicable to an embodiment of the present invention, and is a diagram showing a processing furnace portion in a longitudinal sectional view.

[0016] Figure 2The schematic diagram of the partial structure of the vertical processing furnace of the substrate processing device applicable to the embodiment of the present invention is based on Figure 1 A cross-sectional view taken along line AA of FIG. 1 is a diagram showing a portion of a processing furnace.

[0017] Figure 3 This is a schematic configuration diagram of a controller of a substrate processing apparatus applicable to an embodiment of the present invention, and is a diagram showing a control system of the controller in the form of a block diagram.

[0018] Figure 4 (a) and (b) are diagrams showing the film formation sequence according to one embodiment of the present invention.

[0019] Figure 5 (a) and (b) are cross-sectional views showing modified examples of the vertical processing furnace, respectively, and are views showing a reaction tube, a buffer chamber, a nozzle, etc. partially extracted.

[0020] Figure 6 (a) and (b) are graphs showing the measurement results of the film thickness distribution within the substrate surface of the film formed on the substrate.

[0021] Figure 7 (a) and (b) are graphs showing the measurement results of the film thickness distribution within the substrate surface of a film formed on the substrate. DETAILED DESCRIPTION

[0022] <One embodiment of the present invention>

[0023] The following reference Figure 1 to Figure 3 , Figure 4 (a) and Figure 4 (b) describes one embodiment of the present invention.

[0024] (1) Structure of substrate processing apparatus

[0025] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature adjustment unit). The heater 207 is cylindrical and is supported by a holding plate and installed vertically. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat.

[0026] A reaction tube 203 is arranged concentrically with the heater 207 on the inner side of the heater 207. The reaction tube 203 is composed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. A manifold 209 is arranged concentrically with the reaction tube 203 below the reaction tube 203. The manifold 209 is composed of a metal material such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is installed vertically in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. The processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. The wafer 200 is processed in the processing chamber 201 .

[0027] In the processing chamber 201, nozzles 249a to 249c as the first to third supply parts are respectively installed in a manner penetrating the side wall of the manifold 209. The nozzles 249a to 249c are connected to the gas supply pipes 232a to 232c, respectively. The nozzles 249a to 249c are different nozzles, and the nozzles 249a and 249c are respectively installed adjacent to the nozzle 249b.

[0028] Mass flow controllers (MFCs) 241a to 241c as flow controllers (flow control units) and valves 243a to 243c as on-off valves are provided in order from the upstream side of the gas flow on the gas supply pipes 232a to 232c. Gas supply pipes 232d to 232f are connected to the downstream side of the valves 243a to 243c of the gas supply pipes 232a to 232c, respectively. MFCs 241d to 241f and valves 243d to 243f are provided in order from the upstream side of the gas flow on the gas supply pipes 232d to 232f, respectively.

[0029] like Figure 2As shown, the nozzles 249a to 249c are respectively arranged in the annular space between the inner wall of the reaction tube 203 and the wafer 200 in a plan view, so as to stand up from the lower part of the inner wall of the reaction tube 203 along the upper part toward the arrangement direction of the wafer 200. That is, the nozzles 249a to 249c are arranged along the wafer arrangement area in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area where the wafers 200 are arranged. In a plan view, the nozzle 249b is arranged to face the center of the wafer 200 carried into the processing chamber 201 with the exhaust port 231a described later on a straight line. The nozzles 249a and 249c are arranged to sandwich the straight line L passing through the center of the nozzle 249b and the exhaust port 231a from both sides along the inner wall of the reaction tube 203 (the outer periphery of the wafer 200). The straight line L is also a straight line passing through the nozzle 249b and the center of the wafer 200. It can also be said that the nozzle 249c and the nozzle 249a are arranged on opposite sides with the straight line L sandwiched therebetween. The nozzles 249a and 249c are arranged in line symmetry with the straight line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are respectively provided on the side surfaces of the nozzles 249a to 249c. The gas supply holes 250a to 250c are respectively opened in a manner opposite (facing) to the exhaust port 231a in a plan view, and can supply gas toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the bottom to the top of the reaction tube 203.

[0030] As the first processing gas (raw material gas), for example, a gas containing silicon (Si) as a main element (predetermined element) constituting a film to be formed on a substrate, i.e., a silane-based gas, can be supplied from a gas supply pipe 232b via MFC 241b, a valve 243b, and a nozzle 249b into the processing chamber 201. As the silane-based gas, for example, a halogen silane-based gas containing halogen elements such as chlorine (Cl), fluorine (F), bromine (Br), and iodine (I) can be used. As the halogen silane-based gas, for example, a chlorosilane-based gas containing Si and Cl can be used, for example, hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas can be used.

[0031] As the second process gas (reaction gas) having a molecular structure different from that of the first process gas, for example, a gas containing (N) as a nitriding agent can be supplied from the gas supply pipes 232a and 232c respectively through the MFCs 241a and 241c, the valves 243a and 243c, and the nozzles 249a and 249c into the process chamber 201. As the N-containing gas, for example, a gas composed of two elements, nitrogen (N) and hydrogen (H), that is, a hydrogen nitride gas can be used. As the hydrogen nitride gas, for example, ammonia (NH3) can be used.

[0032] As an inert gas, for example, nitrogen (N2) can be supplied from gas supply pipes 232d to 232f via MFCs 241d to 241f, valves 243d to 243f, gas supply pipes 232a to 232c, and nozzles 249a to 249c into the processing chamber 201. The N2 gas functions as a purge gas, a carrier gas, a dilution gas, etc., and also functions as a film thickness distribution control gas for controlling the film thickness distribution within the wafer surface of the film formed on the wafer 200.

[0033] The first supply system for supplying an inert gas from the nozzle 249a is mainly composed of the gas supply pipe 232d, the MFC 241d, and the valve 243d. The second supply system for supplying a first processing gas from the nozzle 249b is mainly composed of the gas supply pipe 232b, the MFC 241b, and the valve 243b. The third supply system for supplying an inert gas from the nozzle 249c is mainly composed of the gas supply pipe 232f, the MFC 241f, and the valve 243f. The fourth supply system for supplying a second processing gas from at least one of the nozzles 249a and 249c is mainly composed of at least one of the gas supply pipe 232a, the MFC 241a, and the valve 243a and the gas supply pipe 232c, the MFC 241c, and the valve 243c.

[0034] Any one or all of the various supply systems described above may also be configured as an integrated supply system 248 integrated with valves 243a to 243f, MFCs 241a to 241f, etc. The integrated supply system 248 is connected to each gas supply pipe 232a to 232f, and is configured to control, by means of a controller 121 described later: the supply action of various gases into the gas supply pipes 232a to 232f, i.e., the opening and closing action of the valves 243a to 243f; the flow rate adjustment action performed by the MFCs 241a to 241f, etc. The integrated supply system 248 is configured as an integrated unit of an integral type or a split type, and can be loaded and unloaded relative to the gas supply pipes 232a to 232f, etc., as an integrated unit, and is configured to be capable of maintenance, replacement, and expansion of the integrated supply system 248 as an integrated unit.

[0035] An exhaust port 231a for exhausting the ambient gas in the processing chamber 201 is provided at the lower side wall of the reaction tube 203. Figure 2As shown, the exhaust port 231a is arranged at a position opposite (facing) the nozzles 249a to 249c (gas supply holes 250a to 250c) across the wafer 200 when viewed from above. The exhaust port 231a can also be arranged from the lower part of the side wall of the reaction tube 203 along the upper part, that is, along the wafer arrangement area. The exhaust port 231a is connected to the exhaust pipe 231. The exhaust pipe 231 is connected to the vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulating unit). The APC valve 244 is configured to open and close the valve while the vacuum pump 246 is in operation, thereby performing vacuum exhaust and stopping vacuum exhaust in the processing chamber 201. In addition, the valve opening can be adjusted based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is in operation, thereby adjusting the pressure in the processing chamber 201. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 can also be considered to be included in the exhaust system.

[0036] A sealing cover 219 is provided below the manifold 209, and the sealing cover 219 can seal the lower end opening of the manifold 209 in an airtight manner as a furnace port cover. The sealing cover 219 is made of a metal material such as SUS and is formed into a disc shape. An O-ring 220b as a sealing component that abuts against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219. A rotating mechanism 267 for rotating the wafer boat 217 described later is provided below the sealing cover 219. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be able to be lifted and lowered in the vertical direction by the wafer boat elevator 115 as a lifting mechanism provided outside the reaction tube 203. The wafer boat elevator 115 is configured as a conveying device (conveyance mechanism) and can move the wafer 200 into and out of the processing chamber 201 (conveyance) by raising and lowering the sealing cover 219. A gate 219s as a furnace cover is provided below the manifold 209. The gate 219s can hermetically seal the lower end opening of the manifold 209 when the sealing cover 219 is lowered and the wafer boat 217 is moved out of the processing chamber 201. The gate 219s is made of a metal material such as SUS and is formed into a disc shape. An O-ring 220c as a sealing member that abuts against the lower end of the manifold 209 is provided on the upper surface of the gate 219s. The opening and closing action (lifting action, rotation action, etc.) of the gate 219s is controlled by the gate opening and closing mechanism 115s.

[0037] The wafer boat 217 as a substrate support is configured to support a plurality of wafers 200, for example, 25 to 200, in a horizontal posture and in a state where the centers are aligned with each other in a vertical direction and arranged in multiple layers, that is, arranged at intervals. The wafer boat 217 is made of a heat-resistant material such as quartz or SiC. A heat insulation board 218 made of a heat-resistant material such as quartz or SiC is supported in multiple layers at the bottom of the wafer boat 217.

[0038] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. The power supply state of the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263 so that the temperature in the processing chamber 201 has a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0039] like Figure 3 As shown, the control unit (control unit), i.e., the controller 121, is composed of a computer, which includes: a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured as a touch panel, etc.

[0040] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 121c stores in a readable manner: a control program for controlling the operation of the substrate processing device, a process recipe recording the steps, conditions, etc. of the substrate processing described later, etc. The process recipe is combined in a manner that enables the controller 121 to execute each step in the substrate processing described later and obtain a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, etc. are also simply referred to as programs. In addition, process recipes are also referred to as recipes. In this specification, the term "program" includes the meaning of: only a recipe body, only a control program body, or both. RAM121b is configured as a storage area (working area) that can temporarily hold programs, data, etc. read by CPU121a.

[0041] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241f, valves 243a to 243f, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, gate opening and closing mechanism 115s, etc.

[0042] The CPU 121a is configured to read a control program from the storage device 121c and execute it, and to read a recipe from the storage device 121c according to an operation command or the like input from the input / output device 122. The CPU 121a is configured to be able to control the following items according to the contents of the read recipe, namely: the flow rate adjustment operation of various gases by the MFCs 241a to 241f, the opening and closing operation of the valves 243a to 243f, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 by the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 by the temperature sensor 263, the rotation and rotation speed adjustment operation of the wafer boat 217 by the rotation mechanism 267, the lifting and lowering operation of the wafer boat 217 by the wafer boat elevator 115, the opening and closing operation of the gate 219s by the gate opening and closing mechanism 115s, etc.

[0043] The controller 121 can be configured by installing the above-mentioned program stored in the external storage device 123 on a computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory, etc. The storage device 121c and the external storage device 123 are configured as a computer-readable storage medium. Hereinafter, they are also simply referred to as storage media. In this specification, the term "storage medium" includes: only the storage device 121c monomer, only the external storage device 123 monomer, or both. In addition, the provision of the program to the computer can also be carried out without using the external storage device 123, but by using communication methods such as the Internet and dedicated lines.

[0044] (2) Substrate processing steps

[0045] As a step in the manufacturing process of a semiconductor device, refer to Figure 4 (a) Figure 4 (b) will describe an example of a substrate processing sequence for forming a film on a substrate using the above-mentioned substrate processing apparatus, that is, an example of a film forming sequence. In the following description, the operation of each unit constituting the substrate processing apparatus is controlled by the controller 121.

[0046] In the film formation sequence of this embodiment, the following steps are performed, namely:

[0047] A step of preparing a wafer 200 as a substrate in a processing chamber 201; and

[0048] Relative to the wafer 200 in the processing chamber 201, N2 gas as an inert gas is supplied from the nozzle 249a as a first supply unit, HCDS gas as a first processing gas is supplied from the nozzle 249b as a second supply unit, and N2 gas as an inert gas is supplied from the nozzle 249c as a third supply unit which is arranged on the opposite side of the nozzle 249a with respect to the straight line L passing through the nozzle 249b and the center of the wafer 200, to form a step of forming a film on the wafer 200.

[0049] In the above-mentioned film forming step, the balance between the flow rate of N2 gas supplied from nozzle 249a and the flow rate of N2 gas supplied from nozzle 249c is controlled to adjust the film thickness distribution within the wafer surface (hereinafter also referred to as the in-plane film thickness distribution).

[0050] exist Figure 4 (a) and Figure 4 In the film formation sequence shown in (b), the following is shown as an example:

[0051] In the above-mentioned film forming step, a film containing Si and N, i.e., a silicon nitride film (SiN film), is formed as a film on the wafer 200 by performing a cycle of performing the following steps non-simultaneously a predetermined number of times (n times, n is an integer greater than 1), wherein:

[0052] The steps performed in the loop are:

[0053] Step 1 of supplying N2 gas from the nozzle 249a, supplying HCDS gas from the nozzle 249b, and supplying N2 gas from the nozzle 249c with respect to the wafer 200 in the processing chamber 201; and

[0054] Step 2 of supplying NH 3 gas as a second process gas to the wafer 200 in the process chamber 201 .

[0055] In addition, Figure 4 In the film formation sequence shown in (a), the following situation is shown as an example of flow balance control: in the above-mentioned step 1, when HCDS gas is supplied from the nozzle 249b to the wafer 200, the flow rate of the N2 gas supplied from the nozzle 249a is made the same as the flow rate of the N2 gas supplied from the nozzle 249c.

[0056] In addition, Figure 4 In the film formation sequence shown in (b), as another example of flow balance control, the following situation is shown: in the above-mentioned step 1, when HCDS gas is supplied from the nozzle 249b to the wafer 200, the flow rate of the N2 gas supplied from the nozzle 249a is made different from the flow rate of the N2 gas supplied from the nozzle 249c.

[0057] In the following description, as an example, a bare substrate with a small surface area without a concavo-convex structure formed on the surface, i.e., a bare wafer, is used as the wafer 200, and an example of adjusting the in-plane film thickness distribution of the SiN film by the above-mentioned film formation timing and flow control is described. In this specification, the in-plane film thickness distribution of a film that is thickest in the central part of the wafer 200 and gradually becomes thinner as it approaches the periphery (peripheral part) is also referred to as a central convex distribution. In addition, the in-plane film thickness distribution of a film that is thinnest in the central part of the wafer 200 and gradually becomes thicker as it approaches the periphery is referred to as a central concave distribution. In addition, the in-plane film thickness distribution of a flat film with little film thickness change from the central part to the periphery of the wafer 200 is also referred to as a flat distribution. If a film with a central convex distribution can be formed on a bare wafer, a film with a flat distribution can be formed on a pattern wafer (product wafer) with a large surface area and a tiny concavo-convex structure formed on the surface.

[0058] In this manual, for convenience, Figure 4 (a) Figure 4 The film formation timing shown in (b) is represented as follows. The same reference numerals are used in the following description of the modification examples and the like.

[0059]

[0060] In this specification, the term "wafer" includes the meaning of the wafer itself, or the stack of the wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" includes the meaning of the surface of the wafer itself, or the surface of a predetermined layer, etc. formed on the wafer. In this specification, the statement "forming a predetermined layer on the wafer" includes the meaning of directly forming a predetermined layer on the surface of the wafer itself, or forming a predetermined layer on a layer, etc. formed on the wafer. In this specification, the term "substrate" has the same meaning as the term "wafer".

[0061] (Wafer loading and wafer boat loading)

[0062] When a plurality of wafers 200 are loaded into the wafer boat 217 (wafer loading), the gate opening and closing mechanism 115s is used to move the gate 219s to open the lower end opening of the manifold 209 (gate opening). Figure 1 As shown, the wafer boat 217 supporting a plurality of wafers 200 is lifted by the wafer boat elevator 115 and carried into the processing chamber 201 (wafer boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via the O-ring 220b. Through these operations, the wafers 200 are prepared in the processing chamber 201.

[0063] (Pressure adjustment and temperature adjustment)

[0064] After the wafer 200 is prepared in the processing chamber 201, the vacuum pump 246 is used to perform vacuum exhaust (decompression exhaust) in order to make the space in the processing chamber 201, that is, the space where the wafer 200 exists, to be at the required pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. In addition, the heater 207 is used to heat the wafer 200 in the processing chamber 201 to the required film forming temperature. At this time, the power-on state of the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 in order to make the temperature distribution in the processing chamber 201 to be required. In addition, the rotation mechanism 267 is used to start the rotation of the wafer 200. The exhaust in the processing chamber 201, the heating and rotation of the wafer 200 are all continued at least until the processing of the wafer 200 is completed.

[0065] (Film Forming Step)

[0066] After that, execute the subsequent steps 1 and 2 in sequence.

[0067] [Step 1]

[0068] In this step, N 2 gas is supplied from the nozzle 249 a , HCDS gas is supplied from the nozzle 249 b , and N 2 gas is supplied from the nozzle 249 c to the wafer 200 in the process chamber 201 .

[0069] Specifically, the valve 243b is opened to circulate HCDS gas into the gas supply pipe 232b. The HCDS gas is flow-regulated by the MFC 241b, supplied into the processing chamber 201 via the nozzle 249b, and exhausted from the exhaust port 231a. At this time, the HCDS gas is supplied to the wafer 200. In addition, at this time, the valves 243d and 243f are opened, and N2 gas is circulated into the gas supply pipes 232d and 232f, respectively. The N2 gas is flow-regulated by the MFCs 241d and 241f, and supplied into the processing chamber 201 via the gas supply pipes 232a, 232c, the nozzles 249a and 249c, respectively, and exhausted from the exhaust port 231a. At this time, N2 gas is supplied to the wafer 200. The N2 gas is mixed with the HCDS gas in the processing chamber 201. At this time, the valve 243e may also be opened to circulate N2 gas into the gas supply pipe 232e. The N 2 gas is flow-regulated by the MFC 241 e , mixed with the HCDS gas in the gas supply pipe 232 b and the nozzle 249 b , supplied into the processing chamber 201 , and exhausted from the exhaust port 231 a .

[0070] By supplying HCDS gas to the wafer 200, a Si-containing layer containing Cl is formed as a first layer on the surface of the wafer 200. The Si-containing layer containing Cl is formed by physically adsorbing HCDS on the surface of the wafer 200, or chemically adsorbing a substance produced by decomposing a part of HCDS, or depositing Si by pyrolyzing HCDS. That is, the Si-containing layer containing Cl may be an adsorption layer (physical adsorption layer or chemical adsorption layer) of HCDS or a substance produced by decomposing a part of HCDS, or may be a deposited layer (Si layer) of Si containing Cl. The Si-containing layer containing Cl will be referred to as the Si-containing layer hereinafter.

[0071] In this step, when HCDS gas is supplied from nozzle 249b to wafer 200, N2 gas is supplied to processing chamber 201 through nozzles 249a and 249c, respectively. At this time, the balance between the flow rate of N2 gas supplied from nozzle 249a and the flow rate of N2 gas supplied from nozzle 249c is controlled. Thus, the wafer in-plane thickness distribution (hereinafter also referred to as in-plane thickness distribution) of the first layer formed on wafer 200 can be freely adjusted as described below.

[0072] For example, Figure 4 As shown in (a), when HCDS gas is supplied from nozzle 249b to wafer 200, the flow rate of N2 gas supplied from nozzle 249a is made equal to the flow rate of N2 gas supplied from nozzle 249c. By controlling the flow balance of N2 gas when supplying HCDS gas in this way, it is possible to control in the following directions: the direction of increasing (increasing) the concentration, i.e., the partial pressure (supply amount) of HCDS gas supplied to the central part of wafer 200; and the direction of decreasing (decreasing) the concentration, i.e., the partial pressure (supply amount) of HCDS gas supplied to the peripheral part of wafer 200. As a result, the in-plane thickness distribution of the first layer formed on wafer 200 configured as a bare wafer can be made into a central convex distribution.

[0073] In addition, when the flow rate of the N 2 gas supplied from the nozzle 249a is made the same as the flow rate of the N 2 gas supplied from the nozzle 249c, the Figure 4 As shown in (a), each flow rate is made larger than the flow rate of the HCDS gas supplied from the nozzle 249b. By controlling the flow balance of the N2 gas when supplying the HCDS gas in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 constituting the bare wafer can be effectively made into a central convex distribution.

[0074] In addition, for example, Figure 4As shown in (b), when the HCDS gas is supplied from the nozzle 249b to the wafer 200, the flow rate of the N2 gas supplied from the nozzle 249a is made different from the flow rate of the N2 gas supplied from the nozzle 249c. That is, the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249c are made larger than the other flow rate. Figure 4 (b) shows an example in which the flow rate of N2 gas supplied from nozzle 249c is larger than the flow rate of N2 gas supplied from nozzle 249a. By controlling the flow balance of N2 gas when supplying HCDS gas in this way, it is possible to control in the following directions: the direction in which the concentration, i.e., the partial pressure (supply amount) of HCDS gas supplied to the central part of wafer 200 is reduced (decreased); and the direction in which the concentration, i.e., the partial pressure (supply amount) of HCDS gas supplied to the peripheral part of wafer 200 is increased (increased). As a result, the in-plane thickness distribution of the first layer formed on wafer 200 configured as a bare wafer can be made closer to a flat distribution from a central convex distribution, and further to a central concave distribution.

[0075] Furthermore, when the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the N2 gas supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249c can be made larger than the flow rate of the HCDS gas supplied from the nozzle 249b. By controlling the flow rate balance of the N2 gas when supplying the HCDS gas in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 configured as a bare wafer can be effectively made to approach the flat distribution from the central convex distribution, and then approach the central concave distribution.

[0076] In addition, when the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the N2 gas supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249a can be made smaller than the flow rate of the HCDS gas supplied from the nozzle 249b. By controlling the flow rate balance of the N2 gas when supplying the HCDS gas in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 configured as a bare wafer can be effectively changed from a central convex distribution to a flat distribution, and then to a central concave distribution.

[0077] In addition, when the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the N2 gas supplied from the nozzle 249a, it can be as follows: Figure 4As shown in (b), the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the HCDS gas supplied from the nozzle 249b, and the flow rate of the N2 gas supplied from the nozzle 249a is made smaller than the flow rate of the HCDS gas supplied from the nozzle 249b. By controlling the flow balance of the N2 gas when supplying the HCDS gas in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 configured as a bare wafer can be more effectively changed from a central convex distribution to a flat distribution, and then to a central concave distribution.

[0078] In addition, when the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the N2 gas supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249a can be made zero. That is, the supply of the N2 gas from the nozzle 249a can be omitted. By controlling the flow balance of the N2 gas when the HCDS gas is supplied in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 configured as a bare wafer can be effectively made to approach the flat distribution from the central convex distribution, and then approach the central concave distribution.

[0079] In addition, when the flow rate of the N2 gas supplied from the nozzle 249c is made larger than the flow rate of the N2 gas supplied from the nozzle 249a, the flow rate of the N2 gas supplied from the nozzle 249c can be made larger than the flow rate of the HCDS gas supplied from the nozzle 249b, and the flow rate of the N2 gas supplied from the nozzle 249a is made zero. By controlling the flow balance of the N2 gas when supplying HCDS in this way, the in-plane thickness distribution of the first layer formed on the wafer 200 configured as a bare wafer can be more reliably made to approach the flat distribution from the central convex distribution, and then to the central concave distribution.

[0080] After the first layer having the desired in-plane thickness distribution is formed on the wafer 200, the valve 243b is closed to stop the supply of HCDS gas into the processing chamber 201. In addition, the processing chamber 201 is evacuated to remove the residual gas and the like in the processing chamber 201 from the processing chamber 201. At this time, the valves 243d to 243f are opened to supply N2 gas into the processing chamber 201 through the nozzles 249a to 249c. The N2 gas supplied from the nozzles 249a to 249c acts as a purge gas, thereby purging the processing chamber 201 (purge step).

[0081] [Step 2]

[0082] After step 1 is completed, NH 3 gas is supplied to the wafer 200 in the processing chamber 201 , that is, the first layer formed on the wafer 200 .

[0083] Specifically, the valve 243a is opened to circulate NH3 gas into the gas supply pipe 232a. The NH3 gas is flow-regulated by the MFC 241a, supplied into the processing chamber 201 via the nozzle 249a, and exhausted through the exhaust port 231a. At this time, NH3 gas is supplied to the wafer 200. In addition, at this time, the valves 243e and 243f are opened, and N2 gas is supplied into the processing chamber 201 via the nozzles 249b and 249c, respectively. The supply of N2 gas from the nozzles 249b and 249c may not be implemented.

[0084] By supplying NH3 gas to the wafer 200, at least a portion of the first layer formed on the wafer 200 is nitrided (modified). By modifying the first layer, a second layer, i.e., a SiN layer, containing Si and N is formed on the wafer 200. When the second layer is formed, impurities such as Cl contained in the first layer are converted into a gaseous substance containing at least Cl during the modification reaction of the first layer by the NH3 gas and are discharged from the processing chamber 201. As a result, the second layer becomes a layer with less impurities such as Cl than the first layer.

[0085] After the second layer is formed on the wafer 200, the valve 243a is closed to stop the supply of NH3 gas into the processing chamber 201. Then, the gas remaining in the processing chamber 201 is exhausted from the processing chamber 201 according to the same processing steps and processing conditions as the purging step in step 1.

[0086] [Scheduled number of implementations]

[0087] By performing the above-mentioned steps 1 and 2 alternately, i.e., asynchronously, in a cycle one or more times (n times), a SiN film of a predetermined composition and a predetermined film thickness can be formed on the wafer 200. The above-mentioned cycle is preferably repeated a plurality of times. That is, it is preferred that the thickness of the second layer formed when the above-mentioned cycle is performed once is thinner than the desired film thickness, and the above-mentioned cycle is repeated a plurality of times until the film thickness of the SiN film formed by stacking the second layer reaches the desired film thickness.

[0088] According to the present embodiment, by adjusting the in-plane thickness distribution of the first layer formed in step 1, the in-plane film thickness distribution of the SiN film formed on the wafer 200 can be freely adjusted. For example, by making the in-plane thickness distribution of the first layer formed in step 1 a central convex distribution, the in-plane film thickness distribution of the SiN film formed on the wafer 200 can be made a central convex distribution. In addition, by making the in-plane thickness distribution of the first layer formed in step 1 a flat distribution or a central concave distribution, the in-plane film thickness distribution of the SiN film formed on the wafer 200 can be made a flat distribution or a central concave distribution.

[0089] The treatment conditions in step 1 are exemplified below.

[0090] HCDS gas supply flow rate: 100~2000sccm

[0091] N2 gas supply flow rate (gas supply pipe 232a): 0 to 10000 sccm

[0092] N2 gas supply flow rate (gas supply pipe 232c): 0 to 10000 sccm

[0093] Gas supply time: 1 to 120 seconds, preferably 1 to 60 seconds

[0094] Treatment temperature: 250 to 700°C, preferably 300 to 650°C, more preferably 350 to 600°C

[0095] Processing pressure: 1-2666Pa, preferably 67-1333Pa

[0096] In addition, in this specification, the notation of a numerical range such as "250 to 700° C." indicates that the lower limit and the upper limit are included. Therefore, "250 to 700° C." means "250° C. or higher and 700° C. or lower." The same applies to other numerical ranges.

[0097] The treatment conditions in step 2 are exemplified below.

[0098] NH3 gas supply flow rate: 100~10000sccm

[0099] N2 gas supply flow rate (each gas supply pipe): 0~10000sccm

[0100] The other processing conditions may be the same as those in step 1.

[0101] As the first processing gas, in addition to HCDS gas, monochlorosilane (SiH3Cl, referred to as MCS) gas, dichlorosilane (SiH2Cl2, referred to as DCS) gas, trichlorosilane (SiHCl3, referred to as TCS) gas, tetrachlorosilane (SiCl4, referred to as STC) gas, octachlorotrisilane (Si3Cl8, referred to as OCTS) gas and other chlorosilane gases can also be used. In addition, tetrafluorosilane (SiF4) gas, tetrabromosilane (SiBr4) gas, tetraiodosilane (SiI4) gas and the like can also be used instead of these gases. That is, halosilanes such as fluorosilane gases, bromosilane gases, and iodosilane gases can be used instead of chlorosilane gases.

[0102] As the second processing gas, in addition to NH 3 gas, for example, a hydrogen nitride gas such as diimide (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, or N 3 H 8 gas may be used.

[0103] As the inert gas, in addition to N 2 gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used.

[0104] (Post-Purge and Atmospheric Pressure Restoration)

[0105] After the film forming step is completed, N2 gas as a purge gas is supplied from nozzles 249a to 249c into the processing chamber 201, and the gas is exhausted from the exhaust port 231a. Thus, the processing chamber 201 is purged, and the residual gas and reaction by-products in the processing chamber 201 are removed from the processing chamber 201 (post-purge). After that, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0106] (Boat unloading and wafer removal)

[0107] The sealing cover 219 is lowered by the wafer boat elevator 115 to open the lower end of the manifold 209. The processed wafers 200 are carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 in a state supported by the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s and through the O-ring 220c (gate closing). After the processed wafers 200 are carried out to the outside of the reaction tube 203, they are taken out by the wafer boat 217 (wafer unloading).

[0108] (3) Effects of this embodiment

[0109] According to this embodiment, one or more effects as shown below can be obtained.

[0110] (a) When HCDS gas is supplied from nozzle 249b in step 1, the flow rate of N2 gas supplied from nozzle 249a is made the same as the flow rate of N2 gas supplied from nozzle 249c, so that when a SiN film is formed on wafer 200 configured as a bare wafer, the condition can be achieved that makes the in-plane film thickness distribution of the film a central convex distribution.

[0111] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made the same as the flow rate of N2 gas supplied from nozzle 249c, each flow rate is made larger than the flow rate of HCDS gas supplied from nozzle 249b, thereby effectively achieving the condition in which the in-plane film thickness distribution of the film becomes a central convex distribution.

[0112] (b) When HCDS gas is supplied from nozzle 249b in step 1, the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c. For example, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a. Thus, when a SiN film is formed on wafer 200 which is configured as a bare wafer, the condition can be achieved that makes the in-plane film thickness distribution of the film become an arbitrary distribution between a central convex distribution and a central concave distribution.

[0113] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a, and the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of HCDS gas supplied from nozzle 249b, thereby effectively achieving the condition that the in-plane film thickness distribution of the SiN film becomes an arbitrary distribution between the central convex distribution and the central concave distribution.

[0114] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a, and the flow rate of N2 gas supplied from nozzle 249a is made smaller than the flow rate of HCDS gas supplied from nozzle 249b, thereby effectively achieving the condition that the in-plane film thickness distribution of the SiN film becomes an arbitrary distribution between the central convex distribution and the central concave distribution.

[0115] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of HCDS gas supplied from nozzle 249b, and the flow rate of N2 gas supplied from nozzle 249a is made smaller than the flow rate of HCDS gas supplied from nozzle 249b, thereby more effectively achieving the condition that the in-plane film thickness distribution of the SiN film becomes an arbitrary distribution between the central convex distribution and the central concave distribution.

[0116] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a, and the flow rate of N2 gas supplied from nozzle 249a is made zero, thereby effectively achieving the condition that the in-plane film thickness distribution of the SiN film becomes an arbitrary distribution between the central convex distribution and the central concave distribution.

[0117] In addition, when the flow rate of N2 gas supplied from nozzle 249a is made different from the flow rate of N2 gas supplied from nozzle 249c, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of N2 gas supplied from nozzle 249a, the flow rate of N2 gas supplied from nozzle 249c is made larger than the flow rate of HCDS gas supplied from nozzle 249b, and the flow rate of N2 gas supplied from nozzle 249a is made zero, thereby more effectively achieving the condition of making the in-plane film thickness distribution of the SiN film an arbitrary distribution between the central convex distribution and the central concave distribution.

[0118] (c) As described above, according to the present embodiment, when the HCDS gas is supplied from the nozzle 249b in step 1, the flow rate of the N2 gas supplied from the nozzle 249a and the flow rate of the N2 gas supplied from the nozzle 249c are controlled to freely adjust the in-plane film thickness distribution of the SiN film formed on the wafer 200. If a film having a central convex distribution can be formed on a bare wafer, a film having a flat distribution can be formed on a pattern wafer having a large surface area and having a fine concavo-convex structure formed on the surface.

[0119] In addition, the in-plane film thickness distribution of the film formed on the wafer 200 is related to the surface area of ​​the wafer 200, and the reason is considered to be related to the so-called load effect. In the case where the HCDS gas flows from the peripheral side to the central side of the wafer 200 as in the substrate processing device of the present embodiment, the larger the surface area of ​​the wafer 200 to be film-formed, the more HCDS gas is consumed in the peripheral part of the wafer 200 and it is difficult to reach the central part of the wafer 200. As a result, the in-plane film thickness distribution of the film formed on the wafer 200 will become a concave distribution. According to the present embodiment, even in the case of using a pattern wafer with a large surface area as the wafer 200, it is possible to freely control and correct the in-plane film thickness distribution of the film formed on the wafer 200 from a concave distribution to a flat distribution, and then to a convex distribution, etc.

[0120] (d) At least the nozzle 249b and preferably the nozzles 249a to 249c are respectively arranged to be opposite to the exhaust port 231a at least in a plan view, thereby improving the controllability of the in-plane film thickness distribution of the SiN film formed on the wafer 200. In addition, the nozzles 249a and 249c are arranged to be line symmetrical with the straight line L as the symmetry axis, thereby further improving the controllability of the in-plane film thickness distribution of the SiN film formed on the wafer 200.

[0121] (e) The above-mentioned effects can also be obtained when using a first process gas other than HCDS gas, a second process gas other than NH 3 gas, or an inert gas other than N 2 gas.

[0122] (4) Modification

[0123] The film forming steps of this embodiment are not limited to Figure 4 (a) Figure 4 The scheme shown in (b) can be changed as shown in the following modified examples. These modified examples can be combined arbitrarily. Unless otherwise specified, the processing steps and processing conditions of each step of each modified example can be the same as the processing steps and processing conditions of each step of the above-mentioned substrate processing sequence.

[0124] (Variant 1)

[0125] In step 1, when the flow rate of the N2 gas supplied from the nozzle 249a is different from the flow rate of the N2 gas supplied from the nozzle 249c, the flow rate of the N2 gas supplied from the nozzle 249a can be made larger than the flow rate of the N2 gas supplied from the nozzle 249c. Figure 4 Similarly, in the film formation sequence shown in (b), the in-plane film thickness distribution of the SiN film formed on the wafer 200 configured as a bare wafer is made to be any distribution between the central convex distribution and the central concave distribution.

[0126] (Variant 2)

[0127] In step 2, N2 gas may be supplied from nozzle 249a, NH3 gas may be supplied from nozzle 249b, and N2 gas may be supplied from nozzle 249c with respect to wafer 200 in processing chamber 201. Furthermore, when NH3 gas is supplied from nozzle 249b to wafer 200, the balance between the flow rate of N2 gas supplied from nozzle 249a and the flow rate of N2 gas supplied from nozzle 249c may be controlled. Thus, by executing step 2, the in-wafer surface composition distribution of the second layer formed on wafer 200, that is, the in-wafer surface composition distribution of the SiN film formed on wafer 200 by executing the film forming step, may be controlled.

[0128] (Variant 3)

[0129] As the first processing gas, in addition to halosilanes, the following gases may also be used: monosilane (SiH4, abbreviated as MS) gas, disilane (Si2H6, abbreviated as DS) gas and other silicon hydride gases, tris(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as 3DMAS) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as BDEAS) gas and other aminosilane gases.

[0130] In addition, as the second processing gas, for example, amine gases such as triethylamine ((C2H5)3N, abbreviated as TEA) gas, oxygen (O2), water vapor (H2O gas), ozone (O3) gas, plasma-excited O2 gas (O2 ＊ ), oxygen (O) containing gases (oxidants) such as O2 gas + hydrogen (H2), carbon (C) containing gases such as propylene (C3H6) gas, and boron (B) containing gases such as boron trichloride (BCl3) gas.

[0131] Furthermore, for example, the following film formation sequence may be used to form on the wafer 200: a silicon oxynitride film (SiON film), a silicon oxycarbide film (SiOC film), a silicon carbon nitride film (SiCN film), a silicon oxycarbon nitride film (SiOCN film), a silicon boron carbon nitride film (SiBCN film), a silicon boron nitride film (SiBN film), a silicon oxide film (SiO film), a silicon film (Si film), etc. In the following film formation sequence, when the first process gas (HCDS gas, 3DMAS gas, BDEAS gas, DCS gas, MS gas, etc.) is supplied from the nozzle 249b, or when the second process gas (NH3 gas, O2 gas, TEA gas, C3H6 gas, BCl3 gas, etc.) is supplied from the nozzle 249b, the flow rate of the N2 gas supplied from the nozzles 249a and 249c can be balanced, as shown in FIG. Figure 4 (a) and Figure 4 The film formation timing shown in (b) of FIG. 1 is controlled in the same manner as in the above-mentioned modification example. Figure 4 (a) and Figure 4 The film formation sequence shown in (b) has the same effect as the above-mentioned modification example.

[0132]

[0133]

[0134]

[0135]

[0136]

[0137]

[0138]

[0139]

[0140]

[0141]

[0142]

[0143] <Other embodiments>

[0144] The embodiments of the present invention have been specifically described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

[0145] In the above-mentioned embodiment, the example in which the nozzles 249a to 249c are arranged adjacent to each other (close to each other) is described, but the present invention is not limited to this scheme. For example, the nozzles 249a and 249c can also be arranged in a position away from the nozzle 249b in the annular space between the inner wall of the reaction tube 203 and the wafer 200 when viewed from above.

[0146] In the above-mentioned embodiment, an example in which the first to third supply parts are composed of nozzles 249a to 249c and three nozzles are arranged in the processing chamber 201 is described, but the present invention is not limited to this scheme. For example, the supply part of at least one of the first to third supply parts can be composed of two or more nozzles. In addition, nozzles other than the first to third supply parts can also be newly arranged in the processing chamber 201, and N2 gas and various processing gases can be supplied by using the nozzles. When nozzles other than nozzles 249a to 249c are arranged in the processing chamber 201, the newly arranged nozzles can be arranged at a position opposite to the exhaust port 231a in a top view, or can be arranged at a non-opposite position. That is, the newly arranged nozzles can be arranged at a position away from the nozzles 249a to 249c, for example, in a space in a circular shape in a top view between the inner wall of the reaction tube 203 and the wafer 200, and can be arranged at a middle position between the nozzles 249a to 249c and the exhaust port 231a along the outer circumference of the wafer 200, or at a position near the middle position.

[0147] In the above-mentioned embodiment, an example of forming a film containing Si as a main element on a substrate is described, but the present invention is not limited to this method. That is, the present invention can also be preferably applied to the case where a film containing semi-metallic elements such as germanium (Ge) and B as a main element in addition to Si is formed on a substrate. In addition, the present invention can also be preferably applied to the case where a film containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), molybdenum (Mo), tungsten (W), yttrium (Y), lanthanum (La), strontium (Sr), aluminum (Al) and the like is formed on a substrate as a main element.

[0148] For example, the present invention can be preferably applied to the following situations, namely: titanium tetrachloride (TiCl4) gas and trimethylaluminum (Al(CH3)3, abbreviated as TMA) gas are used as the first and second processing gases, and titanium nitride film (TiN film), titanium oxynitride film (TiON film), titanium aluminum carbonitride film (TiAlCN film), titanium aluminum carbide film (TiAlC film), titanium carbonitride film (TiCN film), titanium oxide film (TiO film), etc. are formed on the substrate according to the film formation sequence shown below.

[0149]

[0150]

[0151]

[0152]

[0153]

[0154]

[0155] The recipe for substrate processing is preferably prepared according to the processing content and stored in advance in the storage device 121c through the electronic communication line and the external storage device 123. And preferably, when starting the processing, the CPU 121a appropriately selects an appropriate recipe corresponding to the content of the substrate processing from the multiple recipes stored in the storage device 121c. Thereby, a film of various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility in a substrate processing device. In addition, the burden on the operator can be reduced, operational errors can be prevented, and the processing can be started quickly.

[0156] The above-mentioned prescription is not limited to the case of newly making. For example, the prescription can also be prepared by changing the existing prescription installed in the substrate processing device. In the case of changing the prescription, the changed prescription can also be installed in the substrate processing device through an electronic communication line or a storage medium recording the prescription. In addition, the input and output device 122 of the existing substrate processing device can also be operated to directly change the existing prescription installed in the substrate processing device.

[0157] In the above embodiment, the first to third nozzles (nozzles 249a to 249c) as the first to third supply parts are provided in the processing chamber along the inner wall of the reaction tube. However, the present invention is not limited to the above embodiment. For example, Figure 5As shown in the cross-sectional structure of the vertical processing furnace in (a), a buffer chamber is provided on the side wall of the reaction tube, and the first to third nozzles having the same structure as the above embodiment are provided in the buffer chamber in the same configuration as the above embodiment. Figure 5 (a) shows an example in which a buffer chamber for supply and a buffer chamber for exhaust are provided on the side wall of the reaction tube and are respectively arranged at positions opposite to each other with the wafers sandwiched therebetween. In addition, the buffer chamber for supply and the buffer chamber for exhaust are respectively provided from the lower part to the upper part of the side wall of the reaction tube, that is, along the wafer arrangement area. Figure 5 (a) shows an example in which the buffer chamber for supply is divided into a plurality of (three) spaces, and each nozzle is arranged in each space. The arrangement of the three spaces of the buffer chamber is the same as the arrangement of the first to third nozzles. The spaces in which the first to third nozzles are arranged may also be referred to as the first to third buffer chambers. The first nozzle and the first buffer chamber, the second nozzle and the second buffer chamber, and the third nozzle and the third buffer chamber may also be considered to be the first supply unit, the second supply unit, and the third supply unit, respectively. In addition, for example, as in Figure 5 (b) shows the cross-sectional structure of a vertical processing furnace, Figure 5 The buffer chamber is arranged in the same configuration as (a) and the second nozzle is arranged in the buffer chamber, and the first and third nozzles are arranged along the inner wall of the reaction tube in such a manner that the connecting part between the buffer chamber and the processing chamber is clamped from both sides. The first nozzle, the second nozzle and the buffer chamber, and the third nozzle can also be considered as the first supply part, the second supply part, and the third supply part, respectively. Figure 5 (a) Figure 5 (b) The structure other than the buffer chamber and reaction tube described above Figure 1 The structures of the various parts of the processing furnaces shown are the same. When these processing furnaces are used, the same film forming process as in the above-mentioned embodiment can be performed, and the same effects as in the above-mentioned embodiment can be obtained.

[0158] In the above-mentioned embodiment, an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time is described. The present invention is not limited to the above-mentioned embodiment, and for example, it can also be well applied to the case where a film is formed using a monolithic substrate processing device that processes one or more substrates at a time. In addition, in the above-mentioned embodiment, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present invention is not limited to the above-mentioned embodiment, and it can also be well applied to the case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0159] When these substrate processing apparatuses are used, film formation can be performed with the same timing and processing conditions as those of the above-mentioned embodiment and modified example, and the same effects can be obtained.

[0160] In addition, the above-mentioned embodiments, modifications, etc. can be appropriately combined and applied. The processing steps and processing conditions in this case may be the same as the processing steps and processing conditions in the above-mentioned embodiment, for example.

[0161] Example

[0162] As Example 1, using Figure 1 The substrate processing device shown will execute the cycle of steps 1 and 2 of the above-mentioned embodiment non-simultaneously for a predetermined number of times, thereby forming a SiN film on a bare wafer. When the HCDS gas is supplied from the second supply unit in step 1, the flow rate of the N2 gas supplied from the third supply unit is made larger than the flow rate of the N2 gas supplied from the first supply unit, and the flow rate of the N2 gas supplied from the first supply unit is made zero. The flow rate of the N2 gas supplied from the third supply unit is smaller than the flow rate of the HCDS gas supplied from the second supply unit. Other processing conditions are predetermined conditions within the range of processing conditions of the above-mentioned embodiment.

[0163] As Example 2, using Figure 1 The substrate processing device shown in the embodiment will non-simultaneously execute the cycle of steps 1 and 2 of the above-mentioned embodiment for a predetermined number of times, thereby forming a SiN film on a bare wafer. When the HCDS gas is supplied from the second supply unit in step 1, the flow rate of the N2 gas supplied from the third supply unit is made larger than the flow rate of the N2 gas supplied from the first supply unit, and the flow rate of the N2 gas supplied from the first supply unit is made zero. The flow rate of the N2 gas supplied from the third supply unit is larger than the flow rate of the HCDS gas supplied from the second supply unit. Other processing conditions are the same as those in Example 1.

[0164] As Example 3, using Figure 1 The substrate processing device shown in the embodiment will perform the cycle of steps 1 and 2 of the above-mentioned embodiment non-simultaneously for a predetermined number of times, thereby forming a SiN film on a bare wafer. When the HCDS gas is supplied from the second supply unit in step 1, the flow rate of the N2 gas supplied from the first supply unit is made equal to the flow rate of the N2 gas supplied from the third supply unit. The flow rates of the N2 gas supplied from the first supply unit and the third supply unit are each made smaller than the flow rate of the HCDS gas supplied from the second supply unit. The other processing conditions are the same as those in Example 1.

[0165] As Example 4, using Figure 1The substrate processing device shown in the embodiment will perform the cycle of steps 1 and 2 of the above-mentioned embodiment non-simultaneously for a predetermined number of times, thereby forming a SiN film on a bare wafer. When the HCDS gas is supplied from the second supply unit in step 1, the flow rate of the N2 gas supplied from the first supply unit is made equal to the flow rate of the N2 gas supplied from the third supply unit. The flow rates of the N2 gas supplied from the first supply unit and the third supply unit are respectively made larger than the flow rate of the HCDS gas supplied from the second supply unit. The other processing conditions are the same as those in Example 1.

[0166] Furthermore, the in-plane film thickness distribution of the SiN films of Examples 1 to 4 was measured respectively. Figure 6 (a) Figure 6 (b) Figure 7 (a) Figure 7 (b) shows the measurement results of the in-plane film thickness distribution of the SiN films of Examples 1 to 4. The horizontal axes of these figures respectively represent the film thickness measurement position, that is, the distance from the center of the wafer (mm). In addition, the vertical axes of these figures respectively represent the film thickness of the SiN film at the measurement position.

[0167] like Figure 6 As shown in (a), it is confirmed that the in-plane film thickness distribution of the SiN film of Example 1 is a distribution between a central convex distribution and a central concave distribution, that is, a weaker central concave distribution. Figure 6 As shown in (b), it is confirmed that the in-plane film thickness distribution of the SiN film of Example 2 is a distribution between a central convex distribution and a central concave distribution, that is, a central concave distribution stronger than that of Example 1. Figure 7 As shown in (a), it is confirmed that the in-plane film thickness distribution of the SiN film of Example 3 is a weaker central concave distribution in the entire in-plane and a weaker central convex distribution in the central part of the in-plane. Figure 7 As shown in (b), it was confirmed that the in-plane film thickness distribution of the SiN film of Example 4 became a strong central convex distribution.

[0168] Based on the above results, it can be seen that when HCDS gas is supplied from the second supply unit in step 1, the balance between the flow rate of N2 gas supplied from the first supply unit and the flow rate of N2 gas supplied from the third supply unit is controlled, so that the in-plane film thickness distribution of the SiN film formed on the wafer can be freely adjusted.

[0169] Explanation of symbols

[0170] 200—wafer (substrate); 249a—nozzle (first supply unit); 249b—nozzle (second supply unit); 249c—nozzle (third supply unit).

Claims

1. A method for manufacturing a semiconductor device, characterized in that: have: The process of preparing a substrate in a processing chamber; as well as A process of supplying an inert gas from a first supply unit, supplying a first processing gas from a second supply unit, supplying an inert gas from a third supply unit disposed on the opposite side of the first supply unit with respect to the substrate in the processing chamber, and exhausting these gases from an exhaust port disposed opposite to the second supply unit with respect to the center of the substrate in a plan view, In the step of forming the film, the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the third supply unit are made different, and the balance of the flow rates is controlled to adjust the film thickness distribution within the substrate surface of the film.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: In the step of forming the film, one of a flow rate of the inert gas supplied from the first supply unit and a flow rate of the inert gas supplied from the third supply unit is set to be larger than the other flow rate.

3. The method for manufacturing a semiconductor device according to claim 2, wherein: In the step of forming the film, the flow rate of the one gas is made larger than the flow rate of the first process gas.

4. The method for manufacturing a semiconductor device according to claim 2, wherein: In the step of forming the film, the flow rate of the other gas is made smaller than the flow rate of the first process gas.

5. The method for manufacturing a semiconductor device according to claim 2, wherein: In the step of forming the film, the flow rate of the one gas is set to be larger than the flow rate of the first process gas, and the flow rate of the other gas is set to be smaller than the flow rate of the first process gas.

6. The method for manufacturing a semiconductor device according to claim 2, wherein: In the step of forming the film, the flow rate of the one gas is made larger than the flow rate of the first process gas, and the flow rate of the other gas is made zero.

7. The method for manufacturing a semiconductor device according to claim 2, wherein: In the step of forming the film, the other flow rate is set to zero.

8. The method for manufacturing a semiconductor device according to claim 1, wherein: In the step of forming the film, When the flow rate of the inert gas supplied from the first supply unit is made different from the flow rate of the inert gas supplied from the third supply unit, thereby forming the film on the bare substrate, a condition is established that the film thickness distribution within the substrate surface of the film becomes an arbitrary distribution between a central convex distribution and a central concave distribution.

9. The method for manufacturing a semiconductor device according to claim 8, wherein: One of the flow rates of the inert gas supplied from the first supply unit and the inert gas supplied from the third supply unit is made larger than the other, and the one flow rate is made larger than the flow rate of the first processing gas.

10. The method for manufacturing a semiconductor device according to claim 8, wherein: One of the flow rate of the inert gas supplied from the first supply part and the flow rate of the inert gas supplied from the third supply part is made larger than the other flow rate, and the other flow rate is made smaller than the flow rate of the first processing gas.

11. The method for manufacturing a semiconductor device according to claim 8, wherein: One of the flow rates of the inert gas supplied from the first supply unit and the flow rates of the inert gas supplied from the third supply unit is made larger than the other, the flow rate of one is made larger than the flow rate of the first processing gas, and the flow rate of the other is made smaller than the flow rate of the first processing gas.

12. The method for manufacturing a semiconductor device according to claim 8, wherein: One of the flow rates of the inert gas supplied from the first supply unit and the inert gas supplied from the third supply unit is made larger than the other, and the one flow rate is made larger than the flow rate of the first processing gas, and the other flow rate is made zero.

13. The method for manufacturing a semiconductor device according to claim 8, wherein: One of the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the third supply unit is made larger than the other flow rate, and the other flow rate is made zero.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 13, wherein: In the step of forming the film, a second process gas having a molecular structure different from that of the first process gas is supplied to the substrate in the process chamber and exhausted from the exhaust port.

15. The method for manufacturing a semiconductor device according to claim 14, wherein: In the process of forming the film, a cycle of non-simultaneously performing the following processes is performed a predetermined number of times, namely: A step of supplying an inert gas from the first supply unit, supplying the first processing gas from the second supply unit, supplying an inert gas from the third supply unit, and exhausting these gases from the exhaust port to the substrate in the processing chamber; as well as The step of supplying the second processing gas to the substrate in the processing chamber and exhausting the gas from the exhaust port.

16. The method for manufacturing a semiconductor device according to claim 15, wherein: In the step of supplying the second process gas and exhausting the gas from the exhaust port, the second process gas is supplied from at least one of the first supply unit and the third supply unit, and the gas is exhausted from the exhaust port.

17. A substrate processing method, characterized in that: have: The process of preparing a substrate within a processing chamber; and A process of supplying an inert gas from a first supply unit, supplying a first processing gas from a second supply unit, supplying an inert gas from a third supply unit disposed on the opposite side of the first supply unit with respect to the substrate in the processing chamber, and exhausting these gases from an exhaust port disposed opposite to the second supply unit with respect to the center of the substrate in a plan view, In the step of forming the film, the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the third supply unit are made different, and the balance of the flow rates is controlled to adjust the film thickness distribution within the substrate surface of the film.

18. A substrate processing device, characterized in that: have: a processing chamber that processes the substrate; a first supply system for supplying an inert gas from a first supply unit to the substrate in the processing chamber; a second supply system for supplying a first processing gas from a second supply unit to the substrate in the processing chamber; a third supply system for supplying an inert gas to the substrate in the processing chamber from a third supply unit disposed on the opposite side of the first supply unit across a straight line passing through the second supply unit and the center of the substrate in the processing chamber; an exhaust system for exhausting the atmosphere in the processing chamber from an exhaust port disposed opposite to the second supply unit across the center of the substrate in the processing chamber in a plan view; and A control unit is configured to control the first supply system, the second supply system, the third supply system and the exhaust system in the following manner, namely: with respect to the substrate prepared in the processing chamber, an inert gas is supplied from the first supply unit, the first processing gas is supplied from the second supply unit, and an inert gas is supplied from the third supply unit, and these gases are exhausted from the exhaust port to form a film on the substrate. In the process of forming the film, the flow rate of the inert gas supplied from the first supply unit is made different from the flow rate of the inert gas supplied from the third supply unit, and the balance of each of the flow rates is controlled to adjust the film thickness distribution of the film on the substrate surface.

19. A computer-readable storage medium, characterized in that: A program is stored in the computer to make the substrate processing device execute the following steps, namely: The step of preparing a substrate in a processing chamber of a substrate processing apparatus; A step of supplying an inert gas from a first supply unit, supplying a first processing gas from a second supply unit, supplying an inert gas from a third supply unit disposed on the opposite side of the first supply unit with a straight line passing through the center of the second supply unit and the substrate sandwiched therebetween, and exhausting these gases from an exhaust port disposed opposite to the second supply unit across the center of the substrate in a plan view, to form a film on the substrate; as well as In the step of forming the film, the flow rate of the inert gas supplied from the first supply unit is made different from the flow rate of the inert gas supplied from the third supply unit, and the balance of each of the flow rates is controlled to adjust the film thickness distribution within the substrate surface of the film.

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