Bonding structures on MEMS and ASIC components

Abstract

A MEMS element (100) comprises: a substrate (10); a first passivation layer (20) arranged on the substrate (10); a metal layer (30) arranged on the first passivation layer (20); a second passivation layer (40) arranged on the metal layer (30) and on the first passivation layer (20); and a male mold element (60), wherein a conductive diffusion barrier layer (50) is arranged on the male mold element (60) and on the second passivation layer (40), and wherein a first bonding element (70) is arranged on the male mold element (60).

Description

Technical Field

[0001] The present invention relates to a MEMS component. The present invention also relates to an ASIC component. The present invention also relates to a micromechanical sensor having a MEMS component and an ASIC component. The present invention also relates to a method for manufacturing a micromechanical sensor. Background Art

[0002] Current packaging technology requires that the pressure-sensitive part of the pressure sensor, the pressure sensor diaphragm, be mechanically decoupled from the rest of the sensor by means of a specific spring design and thus be independent of AVT (construction and packaging technology) influences. In addition, external influences that subject the pressure sensor to mechanical stresses, such as bending, are stresses caused, for example, by mechanical clamping during the molding process, construction by means of material mixtures with different thermal expansion coefficients and by the connection of the sensor constructed on an external customer circuit board.

[0003] DE 10 2015 116 353 A1 discloses a packaged MEMS sensor with mechanical decoupling and a production method therefor.

[0004] DE 10 2015 103 485 A1 discloses a MEMS sensor, in particular a pressure sensor.

[0005] US 2014 / 0299948 A1 discloses a silicon-based MEMS microphone, a system and an assembly having the aforementioned elements. Summary of the invention

[0006] It is an object of the present invention to provide an improved chip-to-chip contact, in particular for micromechanical sensors.

[0007] According to a first aspect, the object is achieved by a MEMS component having:

[0008] - substrate;

[0009] - a first passivation layer arranged on the substrate;

[0010] - a metal layer arranged on the first passivation layer;

[0011] - a second passivation layer arranged on the metal layer and on the first passivation layer; and

[0012] A male mold element, wherein an electrically conductive diffusion barrier layer is arranged on the male mold element and on the second passivation layer, wherein a first bonding element is arranged on the male mold element.

[0013] In this way, a MEMS element is provided which has a positive structure which is provided for a subsequent eutectic bonding connection with an ASIC component in order to thereby produce a reliable electrical connection of the metal sublayer to the chip to be connected.

[0014] According to a second aspect, the object is achieved by an ASIC component having:

[0015] - a second substrate;

[0016] - an ASIC functional layer arranged on a second substrate;

[0017] a metal layer and an oxide layer having a through-hole arranged on the ASIC functional layer;

[0018] A passivation layer arranged on the oxide layer, which passivation layer is designed as a spacer element and pot element, wherein during the eutectic bonding process the bonding element can sink into the pot element, wherein outflow of the eutectic can be prevented.

[0019] In this way, an ASIC component is provided which has a pot structure and a spacer, the pot structure being suitable for a subsequent eutectic bonding process with a MEMS component in order to produce a reliable electrical connection between the metal sublayer of the ASIC component and the MEMS component.

[0020] According to a third aspect, the object is achieved by a method for producing a micromechanical sensor, the method comprising the following steps:

[0021] -Provide sensor elements;

[0022] - providing a MEMS element having a dimensionally stable male mold element and a first bonding element arranged on the male mold element;

[0023] - providing an ASIC component having a pot structure and a distance holding structure formed in the passivation layer, the pot structure having a second bonding element arranged therein;

[0024] Eutectic bonding of the MEMS component to the ASIC component, such that the male mold element sinks into the pot structure and a defined distance between the MEMS component and the ASIC component is provided by means of the spacer structure.

[0025] In this way, a micromechanical sensor is provided which has a reliable electrical connection between the metallic sublayers of the components involved.

[0026] Preferred embodiments of the MEMS component and of the ASIC component are subject matter of the dependent claims.

[0027] An advantageous embodiment of the MEMS element is characterized in that the material of the male element is aluminum or a dielectric. This provides different embodiments of the dimensionally stable male element. In the case of a male element made of a dielectric (e.g. an oxide, nitride, etc.), it is advantageous that the adhesion of the eutectic is improved and the bonding material (e.g. in the form of germanium) cannot fuse with the material of the male element. This helps prevent the penetration of germanium into the metal layer. In this case, the current is conducted around the male element through the diffusion barrier layer after bonding.

[0028] Another advantageous embodiment of the MEMS element is characterized in that the diffusion barrier layer is diffusion-resistant relative to the first bonding element. This is preferably achieved by the diffusion barrier layer being one of the following materials: titanium, titanium nitride, tantalum, tantalum nitride. This makes it possible for the diffusion barrier layer to not react with the bonding material and not diffuse into the bonding material.

[0029] Another advantageous embodiment of the MEMS element is characterized in that the diffusion barrier layer has a recess in the planar region. In this way, a large-area configuration of the chip-to-chip contacts is promoted, whereby electrical short circuits between the chip-to-chip contacts can be avoided.

[0030] A further advantageous embodiment of the MEMS element is characterized in that the diffusion barrier layer comprises two partial diffusion barrier layers. In this way, the prevention of the diffusion of germanium into the metal layer is promoted. Advantageously, a further diffusion barrier is thus provided below the male mold element.

[0031] A further advantageous embodiment of the MEMS element is characterized in that the first partial diffusion barrier layer is structured, thereby advantageously making it possible to configure the male mold element to be more mechanically stable.

[0032] A further advantageous embodiment of the MEMS element is characterized in that the male element is arranged on the first passivation layer. This advantageously further improves the mechanical adhesion of the male element and thus the mechanical stability of the bonded component (eg due to externally acting mechanical stresses).

[0033] Another advantageous embodiment of the MEMS element is characterized in that the male element is arranged on the recess of the second passivation layer. Thus, when the male element is formed from metal, a current flow between the male element and the metal layer can be achieved.

[0034] A further advantageous embodiment of the MEMS element is characterized in that the male element is arranged on the first passivation layer, wherein the mutually spaced recesses of the first passivation layer are formed around the male element, wherein the diffusion barrier layer is arranged on the second passivation layer and on the recesses of the first passivation layer. In this way, the electrical resistance can be further reduced, whereby it is no longer necessary to divide the diffusion barrier layer into two partial layers.

[0035] Another advantageous embodiment of the MEMS element is characterized in that the diffusion barrier layer is structured in a plane and the recesses are designed so as not to extend beyond the profile edge. In this way, a chip-to-chip contact having a large area can be advantageously realized.

[0036] A further advantageous embodiment of the MEMS element is characterized in that the material of the male element is a dielectric and the diffusion barrier layer is structured. In this way, an improved mechanical connection of the eutectic to the male element is promoted.

[0037] A further advantageous embodiment of the ASIC component provides that a metallic structure is formed in the passivation layer, which is separate from the second bonding element. This provides a protective ring into which no germanium penetrates. This improves the force absorption of the pot structure, so that during the bonding process the reaction forces from above can be better absorbed. Advantageously, this prevents the pot structure from cracking and prevents the liquid eutectic from flowing out of the pot structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Other features and advantages of the present invention are described in detail below with reference to a plurality of drawings. Identical or functionally identical elements have the same reference numerals. The drawings are particularly intended to illustrate important principles of the present invention and are not necessarily implemented to the correct scale. For better generalization, it may be provided that not all reference numerals are indicated in all drawings.

[0039] The disclosed method features are derived analogously from the corresponding device features and vice versa. This means in particular that the features, technical advantages and embodiments with respect to MEMS components, ASIC components and micromechanical sensors are derived in an analogous manner from the corresponding features, technical advantages and embodiments with respect to the methods for producing the mentioned components and vice versa.

[0040] In the accompanying drawings:

[0041] Figure 1 A cross-sectional view of an embodiment of the proposed MEMS component and ASIC component before the bonding process;

[0042] Figure 2 A cross-sectional view of an embodiment of the proposed chip-to-chip contact after the bonding process;

[0043] Figure 3 A cross-sectional view of an embodiment of the proposed MEMS component and ASIC component before the bonding process;

[0044] Figure 4 Cross-sectional views of further embodiments of the proposed MEMS component and ASIC component before the bonding process;

[0045] Figure 5 Cross-sectional views of further embodiments of the proposed MEMS component and ASIC component before the bonding process;

[0046] Figure 6 Cross-sectional views of further embodiments of the proposed MEMS component and ASIC component before the bonding process;

[0047] Figure 7 A top view of an embodiment of the proposed chip-to-chip contact;

[0048] Figure 8 A top view of a further embodiment of the proposed chip-to-chip contact;

[0049] Fig. 9 Cross-sectional views of additional embodiments of a MEMS element prior to a bonding process; and

[0050] Fig.10 Schematic flow chart of the method for manufacturing the proposed micromechanical sensor. DETAILED DESCRIPTION

[0051] The core idea of ​​the present invention is to provide an improved chip-to-chip contact. The proposed chip-to-chip contact can be used generally for connecting two components by means of eutectic bonding and is advantageously not limited to use in pressure sensors, but can be used for a variety of micromechanical sensor types (e.g. inertial sensors).

[0052] The proposed chip-to-chip contact function enables a reliable electrical connection between the components to be connected, ie between the last metal sublayer in the MEMS component and in the ASIC component.

[0053] The mentioned eutectic bonding occurs by alloying germanium (on the MEMS component) and aluminum (the last metal sublayer of the ASIC component). However, the invention is advantageously not limited to this specific eutectic bonding connection, but can be realized with other, per se known bonding pairs. Examples of suitable metal bonding methods are Al-Ge, Au-Si, Cu-Sn, Al-Al, Cu-Cu, Au-Au, etc.

[0054] During the bonding process carried out at high temperatures, all available aluminum and germanium melts in total and, after a sufficiently short time, is present predominantly as a liquid with individual solid particles.

[0055] At temperatures around or above the eutectic temperature, aluminum is very soft and can be crushed without problems by the pressure of the squeeze. Complete "eutectic" melting of the aluminum is not necessary. The small amount of additional germanium in the aluminum already leads to a further significant softening of the aluminum. Since the alloying of aluminum and germanium does not cause a significant volume change, in the first approximation (inerster ) It can be assumed that the process is volume-neutral.

[0056] Figure 1 shows a cross section of an element of a chip-to-chip contact before bonding and Figure 2 Shown is a cross section through the mentioned elements after bonding.

[0057] exist Figure 1 In the figure, a MEMS element 100 is shown having a substrate in the form of a silicon layer 10, on which a substrate (for example in the form of an oxide layer SiO 2 The first passivation layer 20 is formed in the form of a second passivation layer 40. The second passivation layer 40 and the first metal layer 30 are arranged on the first passivation layer 20. Figure 1 , at least a portion of the second passivation layer 40 is arranged on the first passivation layer 20 next to the metal layer 30. In addition, the second passivation layer 40 at least partially covers the metal layer 30. The second passivation layer 40 has an opening 41, wherein the male mold element 60 is arranged on the opening 41 of the second passivation layer 40. The opening 41 can directly indicate the connection of the male mold element 60 to the metal layer 30, for example, in that the opening 41 is produced above the metal layer 30 (as seen from the substrate) or next to the side of the metal layer 30. The male mold element 60 can be made of aluminum or of a dielectric, such as silicon dioxide or silicon nitride. An electrically conductive diffusion barrier layer 50 is arranged on the male mold element 60. A first bonding element 70 (for example germanium) is arranged on the diffusion barrier layer 50 at the male mold element 60.

[0058] exist Figure 1 The lower section of FIG. 1 shows a cross section of an ASIC component 200 having a silicon layer 110 on which an ASIC functional layer 120 is arranged, which has a plurality of metal sublayers, through-holes and oxide sublayers (not shown) for shaping the ASIC functionality (“ASIC backend”) of the ASIC component 200. A second metal layer 121 and a further oxide layer 130 are arranged on the ASIC functional layer 120, in which electrical through-holes 122 (“vias”) are formed. A passivation layer 140 is formed as a spacer structure on the oxide layer 130, by means of which a trough-shaped structure is formed and in which a second bonding element 121 (for example aluminum) is arranged.

[0059] In this way, the following regions are thus obtained within a realizable chip-to-chip contact having the following functions:

[0060] The male mold element 60 prepares the mechanical connection after bonding, wherein the male mold element 60 is not deformed during and after bonding. The male mold element 60 therefore represents a reference value for the mechanical connection between the MEMS component 100 and the ASIC component 200. The male mold element 60 pushes the Ge structure far enough into the opposite passivation opening so that when the two wafers are pressed together, the germanium first contacts the opposite aluminum. In addition, the male mold element 60 must establish the electrical contact between the eutectic and the sensor conductor track.

[0061] The pot structure of the passivation layer 140 defines the region in which the liquid eutectic 141 (for example aluminum-germanium) is present. The pot structure must reliably accept process tolerances, layer thicknesses and structure widths so that no alloyed aluminum-germanium is squeezed out of the pot and the male mold element 60 is reliably present within the pot (taking into account the bonding adjustment filler).

[0062] The distance maintaining structure on the passivation layer 140 seals the chip-to-chip contact, defines the height of the pot and absorbs the forces acting due to the compressive forces after the eutectic 141 has melted during the bonding process.

[0063] Figure 2 The cross section of the chip-to-chip contact is shown after successful bonding of the MEMS component 100 to the ASIC component 200 .

[0064] The dimensions of the eutectic 141 and the individual domains are derived from this:

[0065] - a male mold element 60, the area of ​​which is linearly proportional to the mechanical load capacity and the electrical conductivity. The height of the male mold element 60 is preferably selected in such a way that it is greater than the thickness of the passivation of the ASIC component 200. In addition, the male mold element 60 should advantageously be located below the original Al surface after bonding, thereby promoting a more reliable, stable bond. In order to achieve this reliably, the height should take into account process tolerances, the layer thickness that defines the male mold height, and the layer thickness of the passivation layer 140. Preferably, the rectangular male mold element 60 has an edge length in the range between about 10 μm and about 100 μm, in order to achieve a sinking below the original aluminum surface to the extent of about 0 to about 1 μm.

[0066] - A basin structure which, after bonding, is defined vertically by the passivation of the MEMS element 100 and the male element 60 on the MEMS side and on the ASIC side by the nearest adjacent metal plane. Horizontally, the basin is defined by the spacing structure of the passivation layer 140. The width of the basin is defined on the left and right by the width of the male element 60 with the additional bonding filler.

[0067] The height of the basin structure is defined by the sum of the layer thicknesses of the metal layer of the second bonding element 123 and the passivation layer 140. The collection volume of the basin structure is particularly important and is defined primarily by the spacing of the male element 60 and the height of the passivation layer 140 and the spacing of the passivation layer relative to the male element 60. In this volume ("collection volume"), the AlGe interface appears after the bonding process. This volume is defined by the process tolerances of the male element 60 and the passivation layer 140 as well as the bonding elements 70, 123. In addition, the volume is defined by the volume that is squeezed out due to the sinking below the initial aluminum surface.

[0068] - A spacer structure of the passivation layer 140 which prevents the eutectic 141 from flowing out of the pot structure. In an optimized embodiment, a distance of 1 μm to 10 μm is provided between the pot and the spacer structure. This distance additionally prevents the pot edge from breaking off, so that no germanium can reach the aluminum base of the spacer.

[0069] - Eutectic 141, the volume ratio of which between the bonding elements (e.g. Ge and Al) should be selected as close as possible to the eutectic ratio. Deviations of germanium on the "too much" trend should be avoided. The volume ratio should also be selected as far as possible so that approximately half of the collection volume of the basin structure should be filled with the nominal layer thickness. In this case, the germanium volume should be as wide as possible (approximately 10 μm to approximately 100 μm) and thin (approximately 100 nm to approximately 1 μm). The germanium structure should be located within the width of the male mold element 60. In the Al volume, the width is defined by the basin width. The height of the Al volume should be in the order of magnitude of approximately 0.5 μm to approximately 2 μm. The Al layer can advantageously have small interruptions of approximately 1 μm on the left and right next to the male mold element 60, whereby the eutectic ratio can be more easily achieved below the male mold element 60.

[0070] exist Figure 1 and 2 The cross section shown in is an exemplary cross section of a proposed chip-to-chip contact for a pressure sensor (not shown). Here, the layers and their functions are as follows:

[0071] The first electrical passivation layer 20 between the metal conductor track and the silicon may be made of SiO 2The layer thickness is in the order of magnitude of 0.1 μm to 1 μm.

[0072] The metal layer 30 forms the electrical conductor tracks of the MEMS element 100. The metal layer can consist of aluminum, wherein the layer thickness of the metal layer is in the order of magnitude of 0.1 μm to 1 μm.

[0073] The electrical second passivation layer 40 on the metallic conductor track can consist of SiN (silicon nitride), which second passivation layer has a layer thickness of approximately 0.1 μm to approximately 1 μm.

[0074] The male mold element 60 may be made of a dielectric (e.g. SiO 2 or SiN), or is electrically conductive (such as aluminum).

[0075] The diffusion barrier layer 50 is electrically conductive and must be diffusion-resistant with respect to the metal layers 30, 123 and with respect to the eutectic 141. The diffusion barrier layer can also consist of titanium, titanium nitride, tantalum, titanium nitride and combinations and compounds of the elements mentioned. The total layer thickness of the diffusion barrier layer 50 is in the order of magnitude of about 0.05 μm to about 2 μm.

[0076] The passivation layer 140 is composed of a dielectric, which may be SiO 2 Or silicon nitride or a combination of these two compounds. The layer thickness is in the order of magnitude of about 0.2 μm to about 2 μm.

[0077] The metal layer of second bonding element 123 represents the last metal sublayer of ASIC component 200 and preferably consists of aluminum. The layer thickness of this metal layer is in the order of magnitude of approximately 0.5 μm to approximately 2 μm.

[0078] Further variant embodiments of the proposed chip-to-chip contact are shown in cross-section in the other figures. The goal is to produce an electrical connection of the electrical metal layer 30 of the MEMS element 100 with the metal layer (“last metal sublayer”) of the ASIC element 200 via the eutectic and finally to carry the electrical connection into the ASIC functional layer 120 via a through-hole between the last and the penultimate metal sublayer 121 .

[0079] Figure 3 The cross-sectional view corresponds to Figure 2The cross-sectional view of the male mold element 60 is shown in FIG. 1 . The cross-sectional view of the male mold element 60 consists of the following layers in the following order: electrical passivation layer 20, first metal layer 30, second passivation layer 40, male mold element 60 and diffusion barrier layer 50. The material of the male mold element 60 can consist of an electrically conductive material, for example, aluminum. As a result, the opening 41 in the second passivation layer 40 can be located below the male mold element 60. Diffusion of germanium into the male mold element 60 must be prevented, so a closed and stable diffusion barrier layer 50 is provided when the male mold element 60 consists of aluminum.

[0080] The stability of the covering diffusion barrier layer 50 may be problematic. For this reason, the diffusion barrier layer 50 may alternatively be divided into two partial diffusion barrier layers 50a, 50b, as in Figure 4 . In this case, the first barrier layer 50a is located below the male mold element 60 and the second barrier layer 50b is located above the male mold element 60. This allows the penetration of germanium into the male mold element 60, wherein further diffusion of germanium into the metal layer 30 is prevented by the first barrier layer 50a in the opening of the passivation layer 40 on the metal layer 30.

[0081] Even due to the penetration of only a small amount of germanium into the aluminum of the male mold element 60, the male mold element becomes very soft and tends to be over-compressed. In addition, due to the breakthrough / gap formation of the second partial diffusion barrier layer 50b, a relatively large amount of aluminum can be involved in the eutectic compound. Therefore, due to the probability distribution of the cracks, it is difficult to design the aluminum to germanium content close to the eutectic ratio. Therefore, in a variant not shown in the figures, the first partial diffusion barrier layer 50a can also be located directly on the metal layer 30 or on parts of the metal layer 30.

[0082] Alternatively, as in Figure 5 As indicated in color, the convex material of the convex element 60 can also be a dielectric, for example SiO 2 or SiN. There is no penetration of germanium into these layers, which are sufficiently stable and thick that germanium can no longer penetrate into the metal layer 30 due to the layout. Also advantageous is the fact that the diffusion barrier layer 50 can be structured, since germanium can also be deposited directly on the punch material. This structuring of the diffusion barrier layer 50 enables a better mechanical connection of the eutectic 141 to the punch element 60, since the wetting of the diffusion barrier layer 50 by means of the eutectic 141 is better than with a SiO2-based layer. 2 The wetting on the male mold element made of aluminum or SiN is even worse. In this case, the resistance of the diffusion barrier layer 50 is defined along the contour of the male mold element 60. Since the electrical conductivity and the protective layer thickness of the diffusion barrier layer 50 are significantly lower than those of the male mold element 60 made of aluminum, the parasitic impedance is relatively Figure 3 and 4The implementation method is higher.

[0083] In order to reduce Figure 5 The opening 41 in the second passivation layer 40 can be formed next to the male mold element 60 and around the male mold element. Figure 4 and 5 The illustrated division of the diffusion barrier layer 50 into two partial diffusion barrier layers 50a, 50b.

[0084] Possible variants of the chip-to-chip contact are Figure 7 and 8 . The rectangular shape allows the chip-to-chip contact to be designed as compact as possible. In this case, the dimensions of the chip-to-chip contact follow in particular the dimensions of the male mold element 60, which can be between approximately 5 μm and approximately 100 μm. In addition, when designing the chip-to-chip contact, it must be taken into account that the electrically conductive diffusion barrier layer 50 is not structured beyond the edge of the profile, but is structured only in the plane.

[0085] This can be based on the following reasons: the deposition of the diffusion barrier layer 50 takes place relatively uniformly, but the structuring of the diffusion barrier layer 50 is very directional with respect to the normal to the wafer surface. For directional etching, the uniform diffusion barrier layer 50 appears larger in its layer thickness than in planar areas. This results in the diffusion barrier layer 50 being completely removed in planar areas, but remnants remain at the edges of the profile. Excessive etching to remove these remnants is not permitted, since this has a negative impact on the sensor performance.

[0086] The structuring within the diffusion barrier layer 50 is necessary to electrically separate the chip-to-chip contacts from one another, wherein electrical conductor tracks of the metal layer 30 are led out of the chip-to-chip contacts in this way.

[0087] Possible embodiments of the structured diffusion barrier layer 50 are described in detail below. Figure 7 , which shows a larger embodiment. Here, a diffusion barrier layer 50 is structured on a closed metal layer 30. The inner edge of the recess 50c of the diffusion barrier layer 50 has the dimensions of the spacing element of the passivation layer 140 plus the surrounding edge of the bonding adjustment filling. The width of the recess 50c of the diffusion barrier layer 50 defines the electrical insulation with respect to the ground potential, wherein the mentioned width should be between approximately 1 μm and approximately 30 μm. The distance of the metal layer 30 from the edge of the diffusion barrier layer 50 is defined by the lithographic adjustment filling, from which the length of the metal layer 30 is obtained as a result, which ultimately defines the maximum dimension A of the chip-to-chip contact. Also visible is the electrical supply 30a for the sensor element, which is not shown.

[0088] Figure 8 A smaller embodiment of the chip-to-chip contact is shown. In this case, use is made of the fact that an electrical connection is present for the pressure sensor in the substrate 10 . The electrical connection from the chip-to-chip contact to the conductor tracks of the metal layer 30 is therefore looped through the substrate 10 in the form of a Si through-contact 11 with a Si through-contact 11a. The parasitic impedance of the Si through-contact 11 is kept within a suitable framework. In order to further reduce the chip-to-chip contact, the distance holders of the passivation layer 140 for spacing the MEMS elements 100 are omitted. These distance holders are no longer absolutely necessary for the chip-to-chip contact, since they are integrated into a bonding frame that is larger in terms of area. In this way, Figure 8 In the variant of FIG. 1 , the eutectic 141 of the chip-to-chip contact is exposed.

[0089] In known bonding frames or chip-to-chip contacts, the metal surface 30 is designed flat. This relatively large aluminum surface softens at temperatures above the eutectic bonding temperature, thereby reducing the mechanical stability of the MEMS backend consisting of the passivation layer 20, the metal layer 30, the passivation layer 40, the male element 60 and the barrier layer 50. As a result, the mechanical load on the passivation layer 40 surrounding the metal layer 30 increases, and thus the risk of cracks in the passivation layer 40 increases. This risk can be counteracted by reticulating the metal layer 30 with a small line width, which is so small that the metal layer is filled by the deposition of the passivation layer 40 and is thus free of profiles.

[0090] Alternatively, for this purpose it may be provided in Fig. 9 . In this alternative, the metal layer 30 in the male mold element 60 is removed and the layer thickness of the male mold element 60 is increased accordingly, wherein this is only possible if the male mold element 60 consists of a dielectric. Since the male mold element 60 is also part of the bonding frame, this is implemented consistently there. In addition, an electrical connection in the metal layer 30 must be ensured for the chip-to-chip contact. This can be done according to Figure 6 The implementation shown in FIG.

[0091] In a further alternative embodiment, the bonding frame may be an electrical chip-to-chip contact. For this purpose, a small region of the bonding frame having a cross section with a chip-to-chip contact may be provided, which chip-to-chip contact is preferably a contact to a ground potential.

[0092] Fig.10 A basic method for producing a micromechanical sensor is shown.

[0093] In step 400 a sensor element is provided.

[0094] In step 410 , an element 100 is provided having a dimensionally stable male element 60 and a first bonding element 70 arranged thereon.

[0095] In step 420 , ASIC component 200 is provided which has a pot structure formed in passivation layer 140 and a spacer structure, the pot structure having second bonding element 123 arranged therein.

[0096] In step 430 , eutectic bonding of the MEMS component 100 and the ASIC component 200 is carried out in such a way that the male mold element 60 sinks into the pot structure and a defined distance between the MEMS component 100 and the ASIC component 200 is provided by means of the spacer structure.

[0097] Although the present invention has been described above with reference to specific embodiments, those skilled in the art may not implement or only partially implement the disclosed embodiments without departing from the core of the present invention.

Claims

1. A MEMS element (100), the MEMS element comprising: - a substrate (10); - a first passivation layer (20) arranged on the substrate (10); - a metal layer (30) arranged on the first passivation layer (20); - a second passivation layer (40) arranged on the metal layer (30) and on the first passivation layer (20); and - a male mold element (60), wherein an electrically conductive diffusion barrier layer (50) is arranged on the male mold element (60) and on the second passivation layer (40), wherein a first bonding element (70) is arranged on the male mold element (60), wherein the male mold element (60) is arranged on an opening (41) of the second passivation layer (40).

2. The MEMS element (100) according to claim 1, characterized in that: The material of the male mold element (60) is aluminum or dielectric.

3. The MEMS element (100) according to claim 1 or 2, characterized in that: The diffusion barrier layer (50) is diffusion resistant relative to the first bonding element (70).

4. The MEMS element (100) according to claim 1 or 2, characterized in that: The diffusion barrier layer (50) has a groove (50c) in a plane region.

5. The MEMS element (100) according to claim 1 or 2, characterized in that: The diffusion barrier layer (50) comprises two partial barrier layers (50a, 50b).

6. The MEMS element (100) according to claim 5, characterized in that: The first partial barrier layer (50a) is structured.

7. The MEMS element (100) according to claim 2, characterized in that: The male mold element (60) is arranged on the first passivation layer (20).

8. The MEMS element (100) according to claim 2, characterized in that: The material of the male mold element (60) is a dielectric and the diffusion barrier layer (50) is structured.

9. An ASIC component (200), the ASIC component comprising: - a second substrate (110); - an ASIC functional layer (120) arranged on the second substrate (110); a metal layer (121) and an oxide layer (130) having a through-hole (122) arranged on the ASIC functional layer (120); - a passivation layer (140) arranged on the oxide layer (130), wherein The passivation layer (140) is designed as a spacer element and a pot element, wherein a second bonding element (123) is arranged in the pot element on the oxide layer (130), wherein the first bonding element can be sunk into the pot element during a eutectic bonding process, wherein outflow of the eutectic (141) can be prevented.

10. The ASIC component (200) according to claim 9, characterized in that A metallic structure separate from the second bonding element (123) is formed in the passivation layer (140).

11. A micromechanical sensor comprising a MEMS element (100) according to any one of claims 1 to 8 and an ASIC element (200) according to claim 9 or 10 eutectic-bonded to the MEMS element (100).

12. A method for producing a micromechanical sensor, the method comprising the following steps: -Provide sensor elements; - providing a MEMS element (100) having a dimensionally stable male mold element (60) and a first bonding element (70) arranged on the male mold element; - providing an ASIC component (200) having a pot structure and a distance holding structure formed in the passivation layer (140), the pot structure having a second bonding element (123) arranged therein; - eutectic bonding the MEMS element (100) to the ASIC element (200) such that the male mold element (60) sinks into the pot structure and a defined distance between the MEMS element (100) and the ASIC element (200) is provided by means of the spacer structure.

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