Drying device, substrate processing system, and drying method

Abstract

The present invention provides a drying device, a substrate processing system, and a drying method. A technique is provided that can suppress pattern collapse of a concavo-convex pattern during drying of a substrate. A drying device that dries a substrate after covering an upper surface of the substrate having a concavo-convex pattern with a liquid film, the drying device having: a first heat transfer portion that is temperature-adjusted to a first temperature and transfers heat between it and the substrate using a temperature difference; a second heat transfer portion that is temperature-adjusted to a second temperature different from the first temperature and transfers heat between it and the substrate using a temperature difference; and a control portion that controls the first temperature and the second temperature to control the surface tension distribution of the liquid film, thereby controlling the coalescence of the liquid film.

Description

Technical Field

[0001] The present disclosure relates to a drying device, a substrate processing system, and a drying method. Background Art

[0002] The liquid processing system described in Patent Document 1 includes: a liquid processing device that supplies a processing liquid to a substrate to perform liquid processing; and a control unit that controls the liquid processing device. The liquid processing device includes a holding unit that holds the substrate and a first supply unit that supplies a volatile fluid to the surface of the substrate held by the holding unit. As the volatile fluid, for example, IPA (isopropyl alcohol) is used. IPA is supplied to the pattern formation surface of the substrate. The control unit causes the liquid processing device to perform a volatile fluid supply process and an exposure process. The volatile fluid supply process is a process of supplying a volatile fluid from the first supply unit to the surface of the substrate to form a liquid film on the substrate surface. The exposure process is a process of exposing the surface of the substrate from the volatile fluid. In the exposure process, the substrate is rotated, and the supply position of IPA is moved from the central portion of the substrate to the outer peripheral portion of the substrate. Further, in the exposure process, the substrate is rotated, and the supply position of nitrogen gas set radially inward of the substrate with respect to the supply position of IPA is moved from the central portion of the substrate to the outer peripheral portion of the substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-90015 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] One aspect of the present disclosure provides a technique capable of suppressing pattern collapse of a concavo-convex pattern during drying of a substrate.

[0008] Solutions for Solving the Problems

[0009] A drying device according to one aspect of the present disclosure is a drying device that dries a substrate after covering an upper surface of the substrate having a concavo-convex pattern with a liquid film, and includes:

[0010] a first heat transfer unit that is temperature-adjusted to a first temperature and transfers heat between it and the substrate using a temperature difference;

[0011] a second heat transfer unit that is temperature-adjusted to a second temperature different from the first temperature and transfers heat between it and the substrate; and

[0012] A control unit that controls the first temperature and the second temperature to control the surface tension distribution of the liquid film, thereby controlling the condensation of the liquid film.

[0013] Effects of the Invention

[0014] According to one technical solution of the present disclosure, it is possible to suppress pattern collapse of the concavo-convex pattern during drying of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a plan view showing a substrate processing system according to an embodiment.

[0016] Figure 2 is a side view showing a substrate processing system according to an embodiment.

[0017] Figure 3 is a cross-sectional view showing a liquid processing device according to an embodiment.

[0018] Figure 4 is a plan view showing a nozzle moving mechanism according to an embodiment.

[0019] Figure 5 is a flowchart showing a substrate processing method according to an embodiment.

[0020] Figure 6 is a cross-sectional view showing a process performed by a liquid processing device according to an embodiment.

[0021] Figure 7 is a cross-sectional view showing drying of the prior art.

[0022] Figure 8 is a cross-sectional view showing drying according to an embodiment.

[0023] Figure 9 is a plan view showing a drying device according to an embodiment.

[0024] Figure 10 is Figure 9 a cross-sectional view of the drying device shown, and is a cross-sectional view along the X-X line of (A) of Figure 9 the drying device shown.

[0025] Figure 11 is a cross-sectional view showing a modified example of the drying device.

[0026] Figure 12 is a cross-sectional view showing a modified example of the second conveying device.

[0027] Figure 13 is Figure 12 a cross-sectional view of the flow tank shown.

[0028] Figure 14It is a cross-sectional view showing a modified example of the liquid discharging mechanism.

[0029] Figure 15 It is a top view showing another modified example of the second conveying device.

[0030] Figure 16 It is Figure 15 a cross-sectional view of the second conveying device shown, and is a cross-sectional view taken along line XVI-XVI of (A) of Figure 15 it.

[0031] Figure 17 It is a top view showing another modified example of the drying device.

[0032] Figure 18 It is a top view showing a modified example of the liquid processing device.

[0033] Figure 19 It is Figure 18 a cross-sectional view of the liquid processing device shown, and is a cross-sectional view taken along line XIX-XIX of Figure 18 it.

[0034] Figure 20 It is a cross-sectional view showing an example of a partition member disposed between the first heat transfer portion and the second heat transfer portion. Detailed Description

[0035] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, the same or corresponding structures may be denoted by the same reference numerals in the respective drawings, and the description thereof may be omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0036] Figure 1 It is a top view showing a substrate processing system according to an embodiment. Figure 2 It is a side view showing a substrate processing system according to an embodiment. The substrate processing system 1 performs liquid processing on the substrate 100 and dries the substrate 100. The substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed adjacent to the processing station 3.

[0037] The loading / unloading station 2 includes a mounting portion 21 and a first conveying portion 22. A plurality of carriers C that accommodate a plurality of substrates 100 in a horizontal state are mounted on the mounting portion 21.

[0038] The first conveying portion 22 is disposed adjacent to the mounting portion 21, and a first conveying device 23 is provided inside. The first conveying device 23 includes a holding portion that holds the substrate 100. The holding portion can move in the horizontal direction and the vertical direction and can rotate about a vertical axis, and conveys the substrate 100 between the carrier C and the transfer portion 31.

[0039] The processing station 3 is disposed adjacent to the first transfer unit 22. The processing station 3 includes: a transfer section 31, a second transfer unit 32, and a plurality of liquid processing devices 33. The plurality of liquid processing devices 33 are arranged on both sides of the second transfer unit 32.

[0040] The transfer section 31 is disposed adjacent to both the first transfer unit 22 and the second transfer unit 32, and transfers the substrate 100 between the first transfer unit 22 and the second transfer unit 32. The transfer section 31 has a drying device 34 inside. It is also possible to stack a plurality of drying devices 34 in the vertical direction as shown in Figure 2 . This can reduce the installation area of the substrate processing system 1.

[0041] The second transfer unit 32 is provided with a second transfer device 35 inside. The second transfer device 35 includes a holding section for holding the substrate 100. This holding section can move in the horizontal and vertical directions and can rotate about the vertical axis, and transfers the substrate 100 between the transfer section 31 and the liquid processing device 33.

[0042] The liquid processing device 33 performs desired substrate processing on the substrate 100 transferred by the second transfer device 35.

[0043] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and as shown in Figure 1 , includes a CPU (Central Processing Unit) 41 and a storage medium 42 such as a memory. Programs for controlling various processes to be executed in the substrate processing system 1 are stored in the storage medium 42. The control device 4 controls the operation of the substrate processing system 1 by causing the CPU 41 to execute the programs stored in the storage medium 42. In addition, the control device 4 includes an input interface 43 and an output interface 44. The control device 4 receives signals from the outside using the input interface 43 and sends signals to the outside using the output interface 44.

[0044] The above programs are stored in a storage medium readable by a computer, for example, and are loaded from this storage medium into the storage medium 42 of the control device 4. Examples of storage media readable by a computer include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disk (MO), a memory card, etc. In addition, the programs can also be downloaded from a server via the Internet and loaded into the storage medium 42 of the control device 4.

[0045] In the above-described substrate processing system 1, first, the first transfer device 23 of the loading / unloading station 2 takes out the substrate 100 from the carrier C placed on the placement unit 21, and places the taken-out substrate 100 on the transfer unit 31. The substrate 100 placed on the transfer unit 31 is taken out from the transfer unit 31 by the second transfer device 35 of the processing station 3 and sent into the liquid processing device 33.

[0046] After the substrate 100 sent into the liquid processing device 33 is processed by the liquid processing device 33, it is sent out from the liquid processing device 33 by the second transfer device 35 and placed on the transfer unit 31. Then, the processed substrate 100 placed on the transfer unit 31 is returned to the carrier C of the placement unit 21 by the first transfer device 23.

[0047] Figure 3 It is a cross-sectional view showing a liquid processing device according to an embodiment. Figure 4 It is a top view showing a nozzle moving mechanism according to an embodiment. The liquid processing device 33 includes, for example, a processing container 51, a holding unit 52, a rotation motor 53, a nozzle 54, a nozzle moving mechanism 55, and a cup 56.

[0048] The processing container 51 houses the holding unit 52, the nozzle 54, and the cup 56. An FFU (Fan Filter Unit) 57 is provided at the top of the processing container 51. The FFU 57 is used to form a downward flow inside the processing container 51.

[0049] The holding unit 52 holds the substrate 100 horizontally. The holding unit 52 is a mechanical chuck, a vacuum adsorption chuck, an electrostatic chuck, or the like.

[0050] The rotation motor 53 rotates the holding unit 52, and rotates the substrate 100 held by the holding unit 52. The holding unit 52 rotates about a vertical rotation axis.

[0051] The nozzle 54 supplies a processing fluid to the substrate 100 held by the holding unit 52. The processing fluid can be either a liquid or a gas, or a mixed fluid of both. The number of nozzles 54 may be one or more.

[0052] As the nozzle 54, for example, there is provided Figure 6 the chemical solution ejection nozzle 54A shown in (A) of Figure 6 the rinsing liquid ejection nozzle 54B shown in (B) of Figure 6 the drying liquid ejection nozzle 54C shown in (C) of

[0053] The chemical solution ejection nozzle 54A supplies the chemical solution L1 to the central portion of the substrate 100 that rotates together with the holding portion 52. The chemical solution L1 spreads from the central portion of the substrate 100 to the outer peripheral portion of the substrate 100 due to centrifugal force, thereby forming a liquid film LF1. The chemical solution L1 is not particularly limited. For example, DHF (dilute hydrofluoric acid) is used.

[0054] In addition, the chemical solution L1 may be a general chemical solution used for cleaning a semiconductor substrate, and is not limited to DHF. For example, the chemical solution L1 may also be SC-1 (an aqueous solution containing ammonium hydroxide and hydrogen peroxide) or SC-2 (an aqueous solution containing hydrogen chloride and hydrogen peroxide). A plurality of chemical solutions L1 may also be used.

[0055] The rinse liquid ejection nozzle 54B supplies the rinse liquid L2 to the central portion of the substrate 100 that rotates together with the holding portion 52. The rinse liquid L2 displaces the chemical solution L1 while spreading from the central portion of the substrate 100 to the outer peripheral portion of the substrate 100 due to centrifugal force, thereby forming a liquid film LF2. The rinse liquid L2 is not particularly limited. For example, water such as DIW (deionized water) is used.

[0056] The drying liquid ejection nozzle 54C supplies the drying liquid L3 to the central portion of the substrate 100 that rotates together with the holding portion 52. The drying liquid L3 displaces the rinse liquid L2 while spreading from the central portion of the substrate 100 to the outer peripheral portion of the substrate 100 due to centrifugal force, thereby forming a liquid film LF3. The drying liquid L3 is not particularly limited. For example, an organic solvent such as IPA (isopropyl alcohol) is used.

[0057] In addition, the drying liquid L3 is not limited to IPA. The drying liquid L3 may be a drying liquid having a surface tension lower than that of the rinse liquid L2, and may also be, for example, HFE (hydrofluoroether), methanol, ethanol, acetone, or trans-1,2-dichloroethylene.

[0058] As Figure 4 shown, the nozzle moving mechanism 55 moves the nozzle 54 in the radial direction of the substrate 100. The nozzle moving mechanism 55 may move a plurality of nozzles 54 uniformly or may move a plurality of nozzles 54 independently.

[0059] The nozzle moving mechanism 55 has, for example: a rotary arm 55a that holds the nozzle 54; and a rotary mechanism 55b that rotates the rotary arm 55a. The rotary mechanism 55b may also serve as a mechanism for raising and lowering the rotary arm 55a.

[0060] The rotary arm 55a is horizontally disposed and holds the nozzle 54 at its tip. The rotary mechanism 55b rotates the rotary arm 55a about a rotation axis extending downward from the base end of the rotary arm 55a. The rotary arm 55a is at Figure 4The position indicated by the solid line in Figure 4 rotates between the position indicated by the double-dashed line in

[0061] In addition, the nozzle moving mechanism 55 may also have a guide rail and a linear motion mechanism to replace the rotating arm 55a and the rotating mechanism 55b. The guide rail is horizontally arranged, and the linear motion mechanism moves the nozzle 54 along the guide rail.

[0062] The cup 56 is arranged to surround the holding part 52 as Figure 3 shown, and is used to trap the liquid splashed from the substrate 100 due to the rotation of the holding part 52. A liquid discharge pipe 58 and an exhaust pipe 59 are provided at the bottom of the cup 56. The liquid discharge pipe 58 is used to discharge the liquid in the cup 56, and the exhaust pipe 59 is used to discharge the gas in the cup 56.

[0063] Figure 5 is a flowchart showing a substrate processing method according to an embodiment. Figure 5 The processes shown are implemented under the control of the control device 4, and the substrate 100 is replaced and repeated. Figure 6 is a cross-sectional view showing the processing performed by a liquid processing apparatus according to an embodiment. Figure 6 (A) of Figure 6 is a cross-sectional view showing a liquid film of a chemical solution according to an embodiment. Figure 6 is a cross-sectional view showing a liquid film of a rinsing liquid according to an embodiment.

[0064] First, the first transfer device 23 of the loading / unloading station 2 takes out the substrate 100 before processing from the carrier C (S1). Next, the first transfer device 23 places the substrate 100 on the transfer portion 31. After that, the second transfer device 35 of the processing station 3 receives the substrate 100 from the transfer portion 31 and transfers it to the liquid processing device 33.

[0065] The liquid processing device 33 horizontally holds the substrate 100 by the holding part 52. An uneven pattern 110 is previously formed on the upper surface 101 of the substrate 100. The uneven pattern 110 is formed by, for example, photolithography and etching methods. The uneven pattern 110 is formed, for example, by etching a film (such as a silicon nitride film) formed on the substrate 100.

[0066] Next, the liquid processing device 33 supplies the chemical solution L1 to the upper surface 101 of the substrate 100 to form a liquid film LF1 of the chemical solution L1 covering the upper surface 101 of the substrate 100 (S2). As Figure 6As shown in (A) of [FIGURE REFERENCE], a chemical solution ejection nozzle 54A is disposed directly above the center of the substrate 100. The chemical solution ejection nozzle 54A supplies a chemical solution L1 from above to the center of the substrate 100 rotating together with the holding unit 52. The supplied chemical solution L1 spreads over the entire upper surface 101 of the substrate 100 due to centrifugal force, thereby forming a liquid film LF1. In order to clean the entire concavo-convex pattern 110, the rotation speed of the holding unit 52 and the supply flow rate of the chemical solution L1 are set such that the height of the liquid surface of the liquid film LF1 is higher than the height of the upper end of the concavo-convex pattern 110.

[0067] Next, the liquid processing apparatus 33 replaces the previously formed liquid film LF1 of the chemical solution L1 with a liquid film LF2 of a rinsing liquid L2, thereby forming the liquid film LF2 (S3). As Figure 6 shown in (B) of [FIGURE REFERENCE], a rinsing liquid ejection nozzle 54B is disposed directly above the center of the substrate 100 instead of the chemical solution ejection nozzle 54A. The ejection of the chemical solution L1 from the chemical solution ejection nozzle 54A is stopped, and the ejection of the rinsing liquid L2 from the rinsing liquid ejection nozzle 54B is started. The rinsing liquid L2 is supplied to the center of the substrate 100 rotating together with the holding unit 52 and spreads over the entire upper surface 101 of the substrate 100 due to centrifugal force, thereby forming the liquid film LF2. Thereby, the chemical solution L1 remaining in the concavo-convex pattern 110 is replaced with the rinsing liquid L2. The rotation speed of the holding unit 52 and the supply flow rate of the rinsing liquid L2 are set so that the height of the liquid surface is maintained higher than the height of the upper end of the concavo-convex pattern 110 during the replacement from the chemical solution L1 to the rinsing liquid L2. Since the concavo-convex pattern 110 is not exposed, pattern collapse due to the surface tension of the liquid surface can be suppressed.

[0068] Next, the liquid processing apparatus 33 replaces the previously formed liquid film LF2 of the rinsing liquid L2 with a liquid film LF3 of a drying liquid L3, thereby forming the liquid film LF3 (S4). As Figure 6 shown in (C) of [FIGURE REFERENCE], a drying liquid ejection nozzle 54C is disposed directly above the center of the substrate 100 instead of the rinsing liquid ejection nozzle 54B. The ejection of the rinsing liquid L2 from the rinsing liquid ejection nozzle 54B is stopped, and the ejection of the drying liquid L3 from the drying liquid ejection nozzle 54C is started. The drying liquid L3 is supplied to the center of the substrate 100 rotating together with the holding unit 52 and spreads over the entire upper surface 101 of the substrate 100 due to centrifugal force, thereby forming the liquid film LF3. Thereby, the rinsing liquid L2 remaining in the concavo-convex pattern 110 is replaced with the drying liquid L3. The rotation speed of the holding unit 52 and the supply flow rate of the drying liquid L3 are set so that the height of the liquid surface is maintained higher than the height of the upper end of the concavo-convex pattern 110 during the replacement from the rinsing liquid L2 to the drying liquid L3. Since the concavo-convex pattern 110 is not exposed, pattern collapse due to the surface tension of the liquid surface can be suppressed.

[0069] After that, the holding unit 52 of the liquid processing device 33 releases the holding of the substrate 100. Next, the second transfer device 35 of the processing station 3 receives the substrate 100 from the liquid processing device 33 and transfers it to the drying device 34 of the transfer unit 31. During this period, the upper surface 101 of the substrate 100 is covered with the liquid film LF3 of the drying liquid L3.

[0070] The drying device 34 exposes the upper surface 101 of the substrate 100 from the liquid film LF3 of the drying liquid L3, thereby drying the substrate 100 (S5). The drying liquid L3 has a surface tension smaller than that of the rinsing liquid L2. After replacing the liquid film LF2 of the rinsing liquid L2 with the liquid film LF3 of the drying liquid L3 and covering the upper surface 101 of the substrate 100 with the liquid film LF3, the upper surface 101 of the substrate 100 is exposed from the liquid film LF3. As a result, compared with the case where the upper surface 101 of the substrate 100 is exposed from the liquid film LF2 of the rinsing liquid L2, pattern collapse due to surface tension can be suppressed.

[0071] After that, the first transfer device 23 of the loading / unloading station 2 receives the dried substrate 100 from the drying device 34 and stores it in the carrier C (S6).

[0072] Hereinafter, the drying (S5) of the present embodiment will be described. Before that, with reference to Figure 7 the drying of the prior art will be described. Figure 7 is a cross-sectional view showing the drying of the prior art. Figure 7 (A) of is a cross-sectional view showing the liquid film LF3 at the start of drying of the prior art. Figure 7 (B) of is a cross-sectional view showing the liquid film LF3 during drying of the prior art.

[0073] In the drying (S5) of the prior art, while rotating the substrate 100 together with the holding unit 52, the supply position of the drying liquid L3 is moved from the central portion of the substrate 100 toward the outer peripheral portion of the substrate 100. Due to the rotation of the substrate 100, a centrifugal force is generated, and the centrifugal force pushes the liquid film LF3 radially outward of the substrate 100.

[0074] First, as Figure 7 shown in (A) of, the liquid film LF3 is deformed from a disk shape to an annular shape due to the centrifugal force, and an exposed surface 103 is formed at the central portion of the upper surface 101 of the substrate 100. The exposed surface 103 is formed concentrically with the substrate 100.

[0075] Next, as Figure 7 shown in (B) of, the exposed surface 103 of the substrate 100 expands from the central portion of the substrate 100 toward the outer peripheral portion of the substrate 100 due to the centrifugal force. After that, the entire upper surface 101 of the substrate 100 is exposed from the liquid film LF3.

[0076] In addition, in the drying (S5) of the prior art, the supply position of a gas such as nitrogen is moved so as to follow the supply position of the drying liquid L3. The supply position of the gas is located at a position radially inward of the supply position of the drying liquid L3. When the gas hits the upper surface 101 of the substrate 100, it flows horizontally along the upper surface 101 of the substrate 100, and pushes the inner peripheral surface of the annular liquid film LF3 radially outward.

[0077] As described above, in the drying (S5) of the prior art, in order to expand the exposed surface 103 of the substrate 100, a force for pushing the liquid film LF3 is utilized. The force utilized is a lateral external force F such as centrifugal force and wind pressure, and the external force F acts on the liquid film LF3 from the outside of the liquid film LF3.

[0078] As Figure 7 shown, the external force F generates a thin film LF4 with a lower liquid level height near the outer periphery of the exposed surface 103 of the substrate 100. The thin film LF4 is also called a boundary layer. The thin film LF4 is generated between the thick film LF5 with a liquid level height higher than that of the thin film LF4 and the exposed surface 103 of the substrate 100.

[0079] Since the thin film LF4 is generated, when the thick film LF5 flows laterally due to the external force F, the drying liquid L3 tends to remain in the recesses 111 of the concavo-convex pattern 110. The drying liquid L3 remaining in the recesses 111 is not discharged from the recesses 111 due to the external force F, and thus is discharged from the recesses 111 by evaporation.

[0080] Between adjacent multiple recesses 111, sometimes a difference in the evaporation rate of the drying liquid L3 occurs. As a result, as Figure 7 shown in (B) of, a difference in the liquid level height of the drying liquid L3 is generated. The difference in the liquid level height of the drying liquid L3 causes pattern collapse due to surface tension.

[0081] Next, the drying (S5) of the present embodiment will be described with reference to Figure 8 this. Figure 8 is a cross-sectional view showing the drying of an embodiment.

[0082] In the drying (S5) of the present embodiment, as will be described in detail later, a temperature difference is generated in the liquid film LF3 to generate a surface tension difference. Generally, when the liquid components of a liquid are the same, the higher the temperature of the liquid, the smaller the surface tension of the liquid.

[0083] The portion with a larger surface tension pulls the portion with a smaller surface tension. The pulling force is called the Marangoni force. As a result, as indicated by the arrow in Figure 8 this, the drying liquid L3 condenses. In Figure 8The state of the condensed liquid film LF3 is shown by a dashed line in the figure.

[0084] In the drying process (S5) of the present embodiment, the Marangoni force is utilized instead of the external force F. Since the Marangoni force is the force of the drying liquid L3 itself, it will not generate a thin film LF4 called the boundary layer (refer to Figure 7 ). As a result, it is possible to suppress the drying liquid L3 from remaining in the concave portion 111 of the concavo-convex pattern 110. Therefore, it is possible to suppress the generation of a height difference in the liquid level of the remaining drying liquid L3 between adjacent concave portions 111. Therefore, it is possible to suppress pattern collapse caused by surface tension.

[0085] In addition, in the drying process (S5) of the present embodiment, since the external force F is not utilized, the rotation of the substrate 100 and the supply of gas to the upper surface 101 of the substrate 100 are not performed. However, as long as the generation of the thin film LF4 can be suppressed, the rotation of the substrate 100 or the like can also be performed. For example, the substrate 100 can be rotated at a low speed.

[0086] Figure 9 It is a top view showing a drying apparatus according to an embodiment. Figure 9 The (A) of Figure 9 is a top view showing the first stage of drying, Figure 9 The (B) of Figure 9 is a top view showing the second stage of drying following Figure 9 the (A) of Figure 9 The (C) of Figure 9 is a top view showing the third stage of drying following Figure 9 the (B) of Figure 9 The (D) of Figure 9 is a top view showing the fourth stage of drying following Figure 10 The (E) of Figure 9 is a cross-sectional view of the drying apparatus shown in Figure 9 and is a cross-sectional view along the X-X line of the (A) of Figure 9 In Figure 10 the illustration of the X-axis direction drive unit 37, Z-axis direction drive unit 38, power supply unit 63, temperature control medium supply unit 73, imaging unit 82, etc. shown in

[0087] The drying apparatus 34 exposes the upper surface 101 of the substrate 100 from the liquid film LF3 of the drying liquid L3 to dry the substrate 100. The exposed surface 103 of the upper surface 101 of the substrate 100 that is exposed from the liquid film LF3 expands. The direction in which the exposed surface 103 expands in a top view is, for example, the X-axis direction. The drying apparatus 34 has a first heat transfer unit 61 and a second heat transfer unit 71.

[0088] The first heat transfer part 61 is temperature - adjusted to the first temperature T1 and transfers heat between it and the substrate 100 using the temperature difference. Generally, heat flows from a high - temperature object to a low - temperature object. The first heat transfer part 61 is formed, for example, in a plate shape and is arranged horizontally. The first heat transfer part 61 is Figure 9 arranged below the substrate 100, but it can also be arranged above the substrate 100. An air layer for heat transfer is formed between the first heat transfer part 61 and the substrate 100.

[0089] The first heat transfer part 61 is, for example, rectangular in plan view. A pair of sides is parallel to the X - axis direction, and the other pair of sides is parallel to the Y - axis direction. The dimension of the first heat transfer part 61 in the direction (for example, the Y - axis direction) orthogonal to the direction (for example, the X - axis direction) in which the exposed surface 103 expands in plan view is larger than the diameter of the substrate 100.

[0090] The first heat transfer part 61 is, for example, a heating plate for heating the substrate 100, and the first temperature T1 is set higher than room temperature. In this case, the drying device 34 has, for example: a heater 62 for heating the first heat transfer part 61; and a power supply unit 63 for supplying power to the heater 62. The heater 62 is Figure 9 embedded inside the first heat transfer part 61, but it can also be arranged outside the first heat transfer part 61. The power supply unit 63 includes a power source and a power regulator for adjusting the power supplied from the power source to the heater 62. The control device 4 controls the power supplied to the heater 62 to control the temperature of the first heat transfer part 61 to the first temperature T1. It can also be that the drying device 34 further has a temperature detector 64 for measuring the temperature of the first heat transfer part 61, and the control device 4 controls the power supplied to the heater 62 so that the measured value of the temperature detector 64 becomes the first temperature T1.

[0091] The second heat transfer part 71 is temperature - adjusted to the second temperature T2 different from the first temperature T1 and transfers heat between it and the substrate 100 using the temperature difference. The second heat transfer part 71 is formed, for example, in a plate shape and is arranged horizontally. The second heat transfer part 71 is Figure 9 arranged below the substrate 100, but it can also be arranged above the substrate 100. An air layer for heat transfer is formed between the second heat transfer part 71 and the substrate 100.

[0092] The second heat transfer part 71 is, for example, rectangular in plan view. A pair of sides is parallel to the X - axis direction, and the other pair of sides is parallel to the Y - axis direction. The dimension of the second heat transfer part 71 in the direction (for example, the Y - axis direction) orthogonal to the direction (for example, the X - axis direction) in which the exposed surface 103 expands in plan view is larger than the diameter of the substrate 100.

[0093] The second heat transfer part 71 is, for example, a cooling plate for cooling the substrate 100, and the second temperature T2 is set lower than room temperature. In this case, the drying device 34 has, for example, a temperature control medium supply part 73 that supplies a temperature control medium to the flow path 72 inside the second heat transfer part 71. The temperature control medium supply part 73 includes, for example, a pump that pressurizes and transports the temperature control medium and a temperature regulator that adjusts the temperature of the temperature control medium. The control device 4 controls the flow rate and temperature of the temperature control medium to control the temperature of the second heat transfer part 71 to the second temperature T2. Alternatively, the drying device 34 may further have a temperature detector 74 for measuring the temperature of the second heat transfer part 71, and the control device 4 controls the flow rate and temperature of the temperature control medium so that the measured value of the temperature detector 74 becomes the second temperature T2. The temperature of the temperature control medium is set lower than room temperature.

[0094] However, it is sufficient that the second temperature T2 is lower than the first temperature T1, and it may also be a high temperature higher than room temperature. Therefore, the second heat transfer part 71 may also be a heating plate. In this case, the temperature of the temperature control medium is set higher than room temperature.

[0095] In addition, it is sufficient that the second temperature T2 is lower than the first temperature T1, and it may also be room temperature. Therefore, the second heat transfer part 71 may also be a room temperature plate. In this case, the temperature of the temperature control medium is set to room temperature.

[0096] The first heat transfer part 61 and the second heat transfer part 71 are arranged along the direction (for example, the X-axis direction) in which the exposed surface 103 expands in a plan view. It is preferable that a gap is formed between the first heat transfer part 61 and the second heat transfer part 71 in order to suppress heat transfer.

[0097] The first heat transfer part 61 and the second heat transfer part 71 create a temperature difference in the liquid film LF3. The temperature difference in the liquid film LF3 occurs at a position that overlaps the boundary line between the first heat transfer part 61 and the second heat transfer part 71 in a plan view, or at a position that is separated from the boundary line by a certain distance. The control device 4 controls the first temperature T1 and the second temperature T2 to control the surface tension distribution of the liquid film LF3, thereby controlling the condensation of the liquid film LF3.

[0098] The second temperature T2 is lower than the first temperature T1, and the second heat transfer part 71 and the first heat transfer part 61 are arranged and configured in the order of the second heat transfer part 71 and the first heat transfer part 61 in the direction of feeding the substrate 100 into the drying device 34. Therefore, the substrate 100 can be dried while the second transfer device 35 feeds the substrate 100 into the transfer part 31. Since the transportation of the substrate 100 and the drying of the substrate 100 are carried out simultaneously, multiple processes can be carried out simultaneously, and the processing time can be shortened.

[0099] The drying device 34 has an exchange holding part 81 for holding the substrate 100. Before the exchange holding part 81 receives the substrate 100 from the second transfer device 35, the drying device 34 dries the substrate 100. The exchange holding part 81 holds the dried substrate 100 and delivers the dried substrate 100 to the first transfer device 23 of the loading / unloading station 2.

[0100] The second transfer device 35 of the processing station 3 has a transfer holding part 36. The transfer holding part 36 holds the substrate 100 horizontally. The transfer holding part 36 has, for example, a U-shaped part and a plurality of claw parts protruding inward from the U-shaped part. The U-shaped part is larger than the substrate 100, and the substrate 100 is placed on the plurality of claw parts. The U-shaped part presses the substrate 100 from the radially outer side. The plurality of claw parts are arranged at intervals in the circumferential direction of the substrate 100. In addition, a U-shaped part that is one size smaller than the U-shaped part can be used instead of the plurality of claw parts. The transfer holding part 36 can move in the horizontal direction (for example, two directions of the X-axis direction and the Y-axis direction) and the vertical direction (for example, the Z-axis direction) and can rotate about the vertical axis.

[0101] The second transfer device 35 has an X-axis direction driving part 37. The X-axis direction driving part 37 moves the transfer holding part 36 in the X-axis direction. The X-axis direction driving part 37 is an example of a horizontal direction driving part that relatively moves the transfer holding part 36 relative to the first heat transfer part 61 and the second heat transfer part 71 in the horizontal direction. The X-axis direction driving part 37 moves the transfer holding part 36 in the X-axis direction so that, in a plan view, the substrate 100 passes through the second heat transfer part 71 and the first heat transfer part 61 in the order of the second heat transfer part 71 and the first heat transfer part 61 and reaches the exchange holding part 81.

[0102] First, as shown in (A) of Figure 9 , in a plan view, before the front end of the substrate 100 passes through the boundary between the second heat transfer part 71 and the first heat transfer part 61, the control device 4 reduces the moving speed of the transfer holding part 36 from the first speed V1 to the second speed V2.

[0103] Next, as shown in (B) of Figure 9 , in a plan view, the front end of the substrate 100 passes through the boundary between the second heat transfer part 71 and the first heat transfer part 61 at the second speed V2. As a result, a temperature difference is generated in the liquid film LF3 to generate a surface tension difference. Therefore, a Marangoni force is used to form an exposed surface 103 at the front end of the substrate 100. The second speed V2 is determined so that droplets do not remain on the exposed surface 103.

[0104] Next, as shown in Figure 9As shown in (C), the control device 4 moves the substrate 100 further forward, thereby further expanding the exposed surface 103 of the substrate 100. The overlap between the substrate 100 and the first heat transfer part 61 increases. Therefore, heat is more likely to be transferred between the substrate 100 and the first heat transfer part 61, and Marangoni force is more likely to be generated. Thus, in order to shorten the drying time, the control device 4 increases the moving speed of the conveying holding part 36 from the second speed V2 to the third speed V3.

[0105] Next, as Figure 9 shown in (D), if the substrate 100 is moved further forward to further expand the exposed surface 103 of the substrate 100, the liquid film LF3 concentrates, the height of the liquid film LF3 becomes higher, and the liquid film LF3 is about to drip from the substrate 100. Before the liquid film LF3 breaks, the control device 4 reduces the moving speed of the conveying holding part 36 from the third speed V3 to the fourth speed V4.

[0106] After that, as Figure 9 shown in (E), if the substrate 100 is moved forward at the fourth speed V4 to further expand the exposed surface 103 of the substrate 100, the liquid film LF3 drips from the rear end of the substrate 100. Since the speed of the substrate 100 is slow, the outflow of the liquid film LF3 is gentle, and droplet residue on the exposed surface 103 can be suppressed.

[0107] As described above, the control device 4 changes the moving speed of the conveying holding part 36 and even the substrate 100 in accordance with the progress of exposure. As described above, droplet residue on the exposed surface 103 can be suppressed. In addition, as described above, the drying time can be shortened.

[0108] In addition, the horizontal direction driving part of the present embodiment moves the conveying holding part 36 and even the substrate 100, but the first heat transfer part 61 and the second heat transfer part 71 can also be moved. In this case, the control device 4 can also change the moving speeds of the first heat transfer part 61 and the second heat transfer part 71 in accordance with the progress of exposure.

[0109] The second conveying device 35 has a Z-axis direction driving part 38, and the Z-axis direction driving part 38 moves the conveying holding part 36 in the Z-axis direction. The Z-axis direction driving part 38 is an example of a vertical direction driving part that relatively moves the conveying holding part 36 in the vertical direction with respect to the first heat transfer part 61 and the second heat transfer part 71.

[0110] The control device 4 controls the Z-axis direction position of the conveying holding part 36 and controls Figure 10The first gap W1 and the second gap W2 shown. The first gap W1 is the gap between the substrate 100 and the first heat transfer portion 61, and the second gap W2 is the gap between the substrate 100 and the second heat transfer portion 71. If the first gap W1 and the second gap W2 change, the ease of heat transfer changes. Therefore, the temperature difference of the liquid film LF3 can be controlled, and then the surface tension difference of the liquid film LF3 can be controlled, and the condensation of the liquid film LF3 can be controlled.

[0111] In addition, since the substrate 100 is moved in the vertical direction in the present embodiment, both the first gap W1 and the second gap W2 are changed at the same time. However, for example, if the first heat transfer portion 61 and the second heat transfer portion 71 are independently moved in the vertical direction, the first gap W1 and the second gap W2 can also be independently changed.

[0112] It is preferable that the drying device 34 has a photographing unit 82. The photographing unit 82 photographs the condensation of the liquid film LF3. The control device 4 processes the image photographed by the photographing unit 82 to determine the quality of the condensation. For example, the quality of the condensation is determined by whether droplets remain on the exposed surface 103. If the control device 4 determines that the condensation is poor, at least one selected from, for example, the first temperature T1, the second temperature T2, the first speed V1, the second speed V2, the third speed V3, the fourth speed V4, the first gap W1, and the second gap W2 is changed to make the condensation good.

[0113] In addition, as Figure 20 shown, the drying device 34 may also have a partition member 80 that hinders the movement of heat between the first heat transfer portion 61 and the second heat transfer portion 71. The partition member 80 is formed in a plate shape from, for example, ceramics. The temperature difference between the first temperature T1 and the second temperature T2 can be increased by using the partition member 80. As a result, the temperature difference of the liquid film LF3 can be increased, and the cohesion of the liquid film LF3 can be improved.

[0114] The upper surface of the partition member 80 may be disposed at a position higher than the upper surfaces of the first heat transfer portion 61 and the second heat transfer portion 71. The movement of heat between the upper spaces of the first heat transfer portion 61 and the second heat transfer portion 71 can be hindered, and the temperature difference of the liquid film LF3 can be further increased, so that the cohesion of the liquid film LF3 can be further improved.

[0115] The lower surface of the partition member 80 may be disposed at a position lower than the lower surfaces of the first heat transfer portion 61 and the second heat transfer portion 71. The movement of heat between the first heat transfer portion 61 and the second heat transfer portion 71 can be further hindered, and the temperature difference between the first temperature T1 and the second temperature T2 can be further increased. As a result, the temperature difference of the liquid film LF3 can be further increased, and the cohesion of the liquid film LF3 can be further improved.

[0116] In order to promote the heat transfer between the substrate 100 and the first heat transfer portion 61, the substrate 100 and the first heat transfer portion 61 may be in contact without a gap. Similarly, in order to promote the heat transfer between the substrate 100 and the second heat transfer portion 71, the substrate 100 and the second heat transfer portion 71 may be in contact without a gap.

[0117] Figure 11 FIG. is a cross-sectional view showing a modified example of the drying apparatus. Hereinafter, the differences between the drying apparatus 34 of the present modified example and the drying apparatus 34 of the above-described embodiment will be mainly described. In this modified example, a partition member 80 as shown may be disposed between the first heat transfer portion 61 and the second heat transfer portion 71. Figure 20 In this modified example, the partition member 80 also functions to partition the flow of the gas. The partition member 80 may also be used in other modified examples.

[0118] The drying apparatus 34 of this modified example includes a first gas supply unit 83 that supplies a first gas to the first heat transfer portion 61. The first gas may be air or an inert gas such as nitrogen or argon. The first gas supply unit 83 includes: a supply source of the first gas; a pipe that extends from the supply source to the first heat transfer portion 61; an on-off valve that is provided in the middle of the pipe; and a flow rate controller that is provided in the middle of the pipe. When the on-off valve opens the pipe, the first gas is supplied from the supply source to the first heat transfer portion 61. The supply flow rate is controlled by the flow rate controller. On the other hand, when the on-off valve closes the pipe, the supply of the first gas from the supply source to the first heat transfer portion 61 is stopped.

[0119] The first heat transfer portion 61 has a flow path 65, and the first gas passes through the flow path 65 and is jetted toward the substrate 100. Since the first gas is temperature-adjusted by the first heat transfer portion 61 while passing through the flow path 65, the heat transfer between the first heat transfer portion 61 and the substrate 100 can be promoted. In addition, when the substrate 100 warps and the interval between the substrate 100 and the first heat transfer portion 61 fluctuates, the fluctuation of the heat transfer easiness due to the interval fluctuation can be reduced.

[0120] When the first heat transfer portion 61 has the flow path 65, the first heat transfer portion 61 is disposed below the substrate 100. Since the first gas hits the lower surface of the substrate 100 and does not hit the upper surface 101 of the substrate 100, the disorder of the liquid film LF3 can be suppressed.

[0121] The drying device 34 of this modification example has a second gas supply unit 84 that supplies a second gas to the second heat transfer unit 71. The second gas can be either air or an inert gas such as nitrogen or argon. The second gas supply unit 84 includes: a supply source of the second gas; a pipe that extends from the supply source to the second heat transfer unit 71; an on-off valve provided in the middle of the pipe; and a flow controller provided in the middle of the pipe. When the on-off valve opens the pipe, the second gas is supplied from the supply source to the second heat transfer unit 71. The supply flow rate is controlled by the flow controller. On the other hand, when the on-off valve closes the pipe, the supply of the second gas from the supply source to the second heat transfer unit 71 stops.

[0122] The second heat transfer unit 71 has a flow path 75, and the second gas passes through the flow path 75 and is jetted toward the substrate 100. Since the second gas is temperature-adjusted by the second heat transfer unit 71 during the period of passing through the flow path 75, the heat transfer between the second heat transfer unit 71 and the substrate 100 can be promoted. In addition, when the substrate 100 warps and the gap between the substrate 100 and the second heat transfer unit 71 fluctuates, the fluctuation of the heat transfer easiness caused by the gap fluctuation can be reduced.

[0123] When the second heat transfer unit 71 has the flow path 75, the second heat transfer unit 71 is arranged below the substrate 100. Since the second gas hits the lower surface of the substrate 100 and does not hit the upper surface 101 of the substrate 100, the disorder of the liquid film LF3 can be suppressed.

[0124] Figure 12 It is a cross-sectional view showing a modification example of the second transfer device. Figure 13 is Figure 12 A cross-sectional view of the shown chute. Hereinafter, the differences between the second transfer device 35 of this modification example and the second transfer device 35 of the above-described embodiment will be mainly described.

[0125] The second transfer device 35 of this modification example has a liquid discharge mechanism 85 that contacts the liquid film LF3 and discharges the liquid film LF3 outside the substrate 100. The situation where the liquid film LF3 overflows and the height of the liquid film LF3 becomes higher can be suppressed, and the height of the liquid film LF3 can be maintained constant. Therefore, the coagulation of the liquid film LF3 can be stabilized.

[0126] The liquid discharge mechanism 85 has, for example, a chute 86 that contacts the liquid film LF3. The chute 86 contacts the liquid film LF3 at the location where the expansion of the exposed surface 103 ends. The liquid of the liquid film LF3 flows in the chute 86 and is discharged outside the substrate 100. As Figure 12 shown, it is preferable that the lower bottom 87 of the chute 86 is inclined downward more toward the downstream. And the liquid discharge can be promoted by gravity.

[0127] It is preferable that a hydrophilic surface modification layer 89 is formed on the lower bottom 87 and the two side walls 88 of the flow channel 86 as Figure 13 shown. The surface modification layer 89 is formed by surface-modifying the surface of the resin-made flow channel 86 using plasma treatment. The liquid of the liquid film LF3 can be sucked out to the flow channel 86 by the surface modification layer 89, and drainage can be promoted. In addition, the flow channel 86 itself can also be formed of a hydrophilic material.

[0128] The second transfer device 35 of this modification example has a spray nozzle 90 as Figure 13 shown, and the spray nozzle 90 supplies liquid to the inside of the flow channel 86. By wetting the inside of the flow channel 86 with the liquid, the liquid of the liquid film LF3 can be introduced into the flow channel 86, and drainage can be promoted.

[0129] The second transfer device 35 of this modification example has a contact separation mechanism 91 as Figure 12 shown. The contact separation mechanism 91 relatively moves the drainage mechanism 85 with respect to the substrate 100, and causes the liquid film LF3 and the drainage mechanism 85 to contact and separate. The contact separation mechanism 91 moves the drainage mechanism 85 in Figure 12 , but the substrate 100 can also be moved, or both can be moved. The control device 4 can control the contact and separation between the liquid film LF3 and the drainage mechanism 85, and control the drainage amount.

[0130] Figure 14 is a cross-sectional view showing a modification example of the drainage mechanism. As Figure 14 shown, the drainage mechanism 85 may have a suction nozzle 92 instead of the flow channel 86, and the suction nozzle 92 contacts the liquid film LF3. The suction nozzle 92 is formed in a cylindrical shape. It is preferable that the second transfer device 35 has a suction mechanism 93, and the suction mechanism 93 sucks the liquid film LF3 via the drainage mechanism 85. The suction mechanism 93 is, for example, a suction pump or the like. The control device 4 can control the suction amount of the suction mechanism 93, and control the drainage amount.

[0131] Figure 15 is a top view showing another modification example of the second transfer device. Figure 15 (A) of Figure 9 is a top view showing the second drying stage in the same manner as (B) of Figure 15 (B) of Figure 9 is a top view showing the fifth drying stage in the same manner as (E) of Figure 15 . In Figure 16 is Figure 15 a cross-sectional view of the second transfer device shown, and is a cross-sectional view along the XVI-XVI line of (A) of Figure 15 . InFigure 15 In the figure, the illustration of the power supply unit 68, the temperature control medium supply unit 77, etc. shown is omitted. Figure 16 The following mainly describes the differences between the second transfer device 35 of this modified example and the second transfer device 35 of the above-described embodiment.

[0132] The second transfer device 35 of this modified example includes a heating unit 66. The heating unit 66 is disposed radially outside the substrate 100 and imparts heat to the starting point of exposure. The heating unit 66 is adjusted to a third temperature T3 higher than room temperature, and heat is imparted to the substrate 100 by using the temperature difference. The heating unit 66 is formed, for example, in a plate shape and is disposed horizontally. The heating unit 66 is, for example, in an arc shape in a top view and is fixed to the transfer holding unit 36.

[0133] The second transfer device 35 includes a heater 67 that heats the heating unit 66 and a power supply unit 68 that supplies power to the heater 67. The heater 67 is Figure 16 embedded inside the heating unit 66, but may also be provided outside the heating unit 66. The power supply unit 68 includes a power source and a power regulator for adjusting the power supplied from the power source to the heater 67. The control device 4 controls the power supplied to the heater 67 and controls the temperature of the heating unit 66 to the third temperature T3. Alternatively, the second transfer device 35 may further include a temperature detector 69 for measuring the temperature of the heating unit 66, and the control device 4 controls the power supplied to the heater 67 so that the measured value of the temperature detector 69 becomes the third temperature T3.

[0134] As Figure 15 shown in (A) of the figure, in a top view, the front end of the substrate 100 passes through the boundary between the second heat transfer unit 71 and the first heat transfer unit 61. As a result, a temperature difference is generated in the liquid film LF3, and a surface tension difference is generated. Therefore, a Marangoni force is used to form an exposed surface 103 at the front end of the substrate 100. At this time, since the heating unit 66 heats the front end of the substrate 100, a sufficient temperature gradient can be generated at the front end of the substrate 100, and a sufficient surface tension difference can be generated at the start of the formation of the exposed surface 103.

[0135] The second transfer device 35 of this modified example includes a cooling unit 76. The cooling unit 76 is disposed radially outside the substrate 100 and absorbs heat from the end point of exposure. The cooling unit 76 is adjusted to a fourth temperature T4 lower than room temperature, and heat is absorbed from the substrate 100 by using the temperature difference. The cooling unit 76 is formed, for example, in a plate shape and is disposed horizontally. The cooling unit 76 is, for example, in an arc shape in a top view and is fixed to the transfer holding unit 36.

[0136] The second conveying device 35 has a temperature control medium supply unit 77 that supplies a temperature control medium to a flow path 78 inside the cooling unit 76. The temperature control medium supply unit 77 includes, for example, a pump that pressurizes and conveys the temperature control medium and a temperature adjuster that adjusts the temperature of the temperature control medium. The control device 4 controls the flow rate and temperature of the temperature control medium to control the temperature of the cooling unit 76 to the fourth temperature T4. Alternatively, the second conveying device 35 may further have a temperature detector 79 for measuring the temperature of the cooling unit 76, and the control device 4 controls the flow rate and temperature of the temperature control medium so that the measured value of the temperature detector 79 becomes the fourth temperature T4. The temperature of the temperature control medium is set lower than room temperature.

[0137] As Figure 15 shown in (B) of [], when the substrate 100 moves forward and the exposed surface 103 of the substrate 100 is further enlarged, the liquid film LF3 drips from the rear end of the substrate 100. At this time, since the cooling unit 76 absorbs heat from the rear end of the substrate 100, a sufficient temperature gradient can be generated at the rear end of the substrate 100, and a sufficient surface tension difference can be generated when the liquid film LF3 flows out.

[0138] Figure 17 is a plan view showing another modification of the drying device. Figure 17 (A) of [] is a plan view showing the first stage of drying, Figure 17 (B) of [] is showing then Figure 17 (A) of [] is a plan view showing the second stage of drying following Figure 17 (C) of [] is showing then Figure 17 (B) of [] is a plan view showing the third stage of drying following Figure 17 (D) of [] is showing then Figure 17 (C) of [] is a plan view showing the fourth stage of drying following Figure 17 (E) of [] is showing then Figure 17 (D) of [] is a plan view showing the fifth stage of drying following Figure 17 In [], the liquid film LF3 is represented by a dot pattern. Additionally, in Figure 17 the temperature of the hollow heat transfer part 96 is the first temperature T1, and the temperature of the blackened heat transfer part 96 is the second temperature T2 (T2 < T1). Hereinafter, the differences between the drying device 34 of this modification and the drying device 34 of the above-described embodiment will be mainly described.

[0139] The drying device 34 of this modification has a plurality of heat transfer parts 96. The plurality of heat transfer parts 96 are each formed in, for example, a plate shape and are arranged horizontally. The plurality of heat transfer parts 96 are arranged Figure 17 below the substrate 100 in [], but may also be arranged above the substrate 100. An air layer for transferring heat is formed between the plurality of heat transfer parts 96 and the substrate 100.

[0140] When viewed from above, the plurality of heat transfer portions 96 are, for example, rectangular in shape. A rectangle includes a rectangle in which the lengths of a pair of sides are different from the lengths of the other pair of sides, and a square in which the lengths of a pair of sides are equal to the lengths of the other pair of sides. A pair of sides are parallel to the X-axis direction, and the other pair of sides are parallel to the Y-axis direction. The dimension of the heat transfer portion 96 in the direction orthogonal to the direction in which the exposed surface 103 expands when viewed from above (for example, the X-axis direction) (for example, the Y-axis direction) is larger than the diameter of the substrate 100.

[0141] The plurality of heat transfer portions 96 are arranged along the direction in which the exposed surface 103 expands when viewed from above (for example, the X-axis direction), and are arranged in a range larger than the diameter of the substrate 100. The plurality of heat transfer portions 96 are respectively switched to a first temperature T1 and a second temperature T2 (T2 < T1). For example, a Peltier element is used in the switching. The Peltier element is formed by joining two metals. When a direct current flows through the joint surface, heat moves between the metals. If the direction of the direct current is reversed, the direction of heat movement is reversed. The control device 4 controls the direction and magnitude of the current applied to the Peltier element, and switches the heat transfer portion 96 to the first temperature T1 and the second temperature T2. The heat transfer portion 96 of this modification functions as both the first heat transfer portion 61 and the second heat transfer portion 71 of the above-described embodiment.

[0142] First, as Figure 17 shown in (A) of, when viewed from above, the substrate 100 overlaps with the plurality of heat transfer portions 96, and all of the plurality of heat transfer portions 96 are adjusted to the second temperature T2. As described above, the plurality of heat transfer portions 96 are arranged along the direction in which the exposed surface 103 expands when viewed from above (for example, the X-axis direction), and are arranged in a range larger than the diameter of the substrate 100. Therefore, the temperature of the entire substrate 100 is uniform, and the temperature of the liquid film LF3 is also uniform as a whole. Therefore, condensation of the liquid film LF3 does not occur.

[0143] Next, as Figure 17 shown in (B) to Figure 17 shown in (E) of, the temperatures of the plurality of heat transfer portions 96 are sequentially switched from the second temperature T2 to the first temperature T1 from one side (the negative side in the X-axis direction) toward the opposite side (the positive side in the X-axis direction). As a result, a temperature difference is generated in the liquid film LF3, and a surface tension difference is generated. Therefore, the Marangoni force can be used to expand the exposed surface 103. Alternatively, the switching speed is determined such that droplets do not remain on the exposed surface 103. For example, it is determined to be small at first, large in the middle, and small at the end.

[0144] As described above, the plurality of heat transfer portions 96 of this modification are arranged along the direction in which the exposed surface 103 expands in a plan view (e.g., the X-axis direction), and are arranged in a range larger than the diameter of the substrate 100. The plurality of heat transfer portions 96 are respectively switched to the first temperature T1 and the second temperature T2 (T2 < T1). In this case, the expansion of the exposed surface 103 can be implemented without relatively moving the heat transfer portion 96 and the substrate 100 in the horizontal direction.

[0145] Figure 18 It is a plan view showing a modification of the liquid processing apparatus. Figure 19 is Figure 18 a cross-sectional view of the liquid processing apparatus shown, and is a cross-sectional view along the Figure 18 XIX-XIX line. Hereinafter, the differences between the liquid processing apparatus 33 of this modification and the liquid processing apparatus 33 of the above-described embodiment will be mainly described.

[0146] A drying device 34 is provided inside the liquid processing apparatus 33 of this modification. Inside the processing container 51, not only the formation of the liquid film LF1 of the chemical solution L1 (S2), the formation of the liquid film LF2 of the rinsing liquid L2 (S3), and the formation of the liquid film LF3 of the drying liquid L3 (S4) can be implemented, but also the drying of the substrate 100 (S5) can be implemented. In the state where the liquid film LF3 is formed, since the substrate 100 is not sent out of the liquid processing apparatus 33, natural drying of the liquid film LF3 can be suppressed, and foreign matter mixing into the liquid film LF3 can also be suppressed.

[0147] The drying device 34 includes a first heat transfer portion 61 and a second heat transfer portion 71. The first heat transfer portion 61 and the second heat transfer portion 71 are arranged inside the extension cup 94 in a plan view as Figure 18 shown. The extension cup 94 is used to receive the liquid dripping from the substrate 100 due to the drying device 34 and cause the liquid to flow toward the cup 56. The extension cup 94 has an inclined surface 95 that slopes downward more toward the radial inner side as Figure 19 shown, and receives the liquid on the inclined surface 95 and causes the liquid to flow on the inclined surface 95. The liquid is discharged from the bottom of the cup 56 to the drain pipe 58. Both the liquid dripping from the substrate 100 due to the drying device 34 and the liquid recovered by the cup 56 during the formation of the liquid film LF3 can be discharged from the same drain pipe 58, and thus the generalization of components can be achieved. In addition, a part of the liquid dripping from the substrate 100 due to the drying device 34 may be directly recovered by the cup 56 without passing through the extension cup 94.

[0148] The second transfer device 35 includes a Y-axis direction drive unit 39 that moves the transfer holding unit 36 in the Y-axis direction. The Y-axis direction drive unit 39 is an example of a horizontal direction drive unit that relatively moves the transfer holding unit 36 in the horizontal direction with respect to the first heat transfer unit 61 and the second heat transfer unit 71. The Y-axis direction drive unit 39 moves the transfer holding unit 36 in the Y-axis direction so that the substrate 100 passes over the second heat transfer unit 71 and the first heat transfer unit 61 in this order and reaches the outside of the processing container 51 when viewed from above.

[0149] The second temperature T2 is lower than the first temperature T1, and the second heat transfer unit 71 and the first heat transfer unit 61 are arranged in this order in the direction of sending out the substrate 100 from the liquid processing device 33. Therefore, the substrate 100 can be dried while the second transfer device 35 sends out the substrate 100 from the liquid processing device 33. Since the transfer of the substrate 100 and the drying of the substrate 100 are carried out simultaneously, multiple processes can be carried out simultaneously, and the processing time can be shortened.

[0150] As described above, embodiments of the substrate processing apparatus and the substrate processing method of the present disclosure have been described, but the present disclosure is not limited to the above embodiments and the like. Various changes, corrections, substitutions, additions, deletions, and combinations can be made within the scope described in the claims. Of course, these also belong to the technical scope of the present disclosure.

[0151] For example, the substrate 100 is circular plate-shaped in the above embodiment, but it may also be rectangular plate-shaped. The shape of the substrate 100 is not particularly limited.

[0152] In addition, the substrate 100 is a semiconductor substrate in the above embodiment, but it may also be a glass substrate. The material of the substrate 100 is not particularly limited.

[0153] The installation location of the drying device 34 is not limited to the inside of the transfer portion 31 or the inside of the liquid processing device 33. For example, the drying device 34 may be installed outside the transfer portion 31 and outside the liquid processing device 33, or may be installed adjacent to the second transfer portion 32 in the same manner as the liquid processing device 33. In this case, similar to the case where the drying device 34 is arranged inside the transfer portion 31, it is preferable that the second heat transfer unit 71 and the first heat transfer unit 61 are arranged in this order in the direction of feeding the substrate 100 to the drying device 34. As a result, the substrate 100 can be dried while the second transfer device 35 feeds the substrate 100 to the drying device 34. Since the transfer of the substrate 100 and the drying of the substrate 100 are carried out simultaneously, multiple processes can be carried out simultaneously, and the processing time can be shortened.

[0154] The device for heating the first heat transfer part 61 is not limited to a heater, a temperature control medium supply part, or a Peltier element. For example, the first heat transfer part 61 can also be heated by laser light. The same applies to the device for heating the second heat transfer part 71 and the device for heating the heating part 66.

[0155] The device for cooling the second heat transfer part 71 is not limited to a temperature control medium supply part, and can also be, for example, a Peltier element. The same applies to the device for cooling the cooling part 76.

[0156] Perform using the conveying holding part 36 of the second conveying device 35 Figure 8 The drying shown, but it can also be performed using the holding part of the drying device 34 (for example, the transfer holding part 81). In this case, either the holding part of the drying device 34 can be moved, or the first heat transfer part 61 and the second heat transfer part 71 can be moved. Further, in the case of using the heat transfer part 96 that functions as both the first heat transfer part 61 and the second heat transfer part 71, it is preferable not to move either the heat transfer part 96 or the holding part of the drying device 34.

Claims

1. A drying device that dries a substrate after covering an upper surface of the substrate having a concavo-convex pattern horizontally held with a liquid film, wherein, the drying device includes: a first heat transfer part formed in a plate shape and horizontally disposed above or below the substrate, an air layer for heat transfer is formed between the first heat transfer part and the substrate, the first heat transfer part is temperature-adjusted to a first temperature, and heat is transferred between the first heat transfer part and the substrate by using a temperature difference; a second heat transfer part formed in a plate shape and horizontally disposed above or below the substrate, an air layer for heat transfer is formed between the second heat transfer part and the substrate, the second heat transfer part is temperature-adjusted to a second temperature lower than the first temperature, and heat is transferred between the second heat transfer part and the substrate by using a temperature difference; and a control part that controls the first temperature and the second temperature, and controls the surface tension distribution of the liquid film, thereby controlling the condensation of the liquid film, wherein the first heat transfer part and the second heat transfer part are arranged and disposed in the order of the second heat transfer part and the first heat transfer part in the direction in which the substrate is fed into the drying device.

2. The drying device according to claim 1, wherein, the drying device includes a photographing part for photographing the condensation of the liquid film.

3. The drying device according to claim 1 or 2, wherein, the first heat transfer part has a flow path through which a first gas jetted toward the substrate flows, the drying device includes a first gas supply part that supplies the first gas to the first heat transfer part.

4. The drying device according to claim 1 or 2, wherein, the drying device includes a liquid discharging mechanism that contacts the liquid film and discharges the liquid film outside the substrate.

5. The drying device according to claim 4, wherein, the drying device includes a contact and separation mechanism that relatively moves the liquid discharging mechanism with respect to the substrate, and makes the liquid film contact and separate from the liquid discharging mechanism.

6. The drying device according to claim 4, wherein, the drying device includes a suction mechanism that sucks the liquid film through the liquid discharging mechanism.

7. The drying device according to claim 1 or 2, wherein, the drying device has a partition member that obstructs heat transfer between the first heat transfer part and the second heat transfer part.

8. The drying device according to claim 1 or 2, wherein, the drying device includes a holding part that horizontally holds the substrate, the drying device includes a horizontal direction driving part that relatively moves the holding part with respect to the first heat transfer part and the second heat transfer part in the horizontal direction.

9. The drying device according to claim 8, wherein, the control part changes the speed at which the holding part relatively moves with respect to the first heat transfer part and the second heat transfer part in the horizontal direction in correspondence with the progress of the exposure caused by the condensation.

10. The drying device according to claim 8, wherein, the drying device includes a vertical direction driving part that relatively moves the holding part with respect to the first heat transfer part and the second heat transfer part in the vertical direction.

11. A drying device that dries a substrate after covering an upper surface of the substrate having a concavo-convex pattern with a liquid film, wherein, the drying device includes: a first heat transfer part that is temperature-adjusted to a first temperature and transfers heat between it and the substrate using a temperature difference; a second heat transfer part that is temperature-adjusted to a second temperature different from the first temperature and transfers heat between it and the substrate using a temperature difference; and a control part that controls the first temperature and the second temperature to control the surface tension distribution of the liquid film, thereby controlling the condensation of the liquid film, wherein the drying device has a heating part that is disposed radially outside the substrate and imparts heat to a start point of exposure caused by the condensation.

12. A drying device that dries a substrate after covering an upper surface of the substrate having a concavo-convex pattern with a liquid film, wherein, the drying device includes: a first heat transfer part that is temperature-adjusted to a first temperature and transfers heat between it and the substrate using a temperature difference; a second heat transfer part that is temperature-adjusted to a second temperature different from the first temperature and transfers heat between it and the substrate using a temperature difference; and a control part that controls the first temperature and the second temperature to control the surface tension distribution of the liquid film, thereby controlling the condensation of the liquid film, wherein the drying device has a cooling part that is disposed radially outside the substrate and absorbs heat from an end point of exposure caused by the condensation.

13. A substrate processing system, wherein, the substrate processing system includes: the drying device according to any one of claims 1 to 7, 11, and 12; a liquid processing device that forms the liquid film; a placement part on which a carrier housing the substrate is placed; a first transfer device that transfers the substrate to the placement part and a transfer part; and a second transfer device that transfers the substrate to the transfer part and the liquid processing device.

14. The substrate processing system according to claim 13, wherein, the drying device is disposed inside the transfer part.

15. The substrate processing system according to claim 14, wherein, there are a plurality of the drying devices, which are stacked in the vertical direction.

16. The substrate processing system according to claim 13, wherein, the drying device is disposed outside the transfer part and outside the liquid processing device.

17. The substrate processing system according to claim 13, wherein, the drying device is disposed inside the liquid processing device.

18. A drying method implemented using the drying device according to any one of claims 1 to 12, for drying a substrate after covering an upper surface of the substrate having a concavo-convex pattern with a liquid film, in this drying method, heat is transferred between the substrate and a first heat transfer part temperature-adjusted to a first temperature using a temperature difference; heat is transferred between the substrate and a second heat transfer part temperature-adjusted to a second temperature different from the first temperature using a temperature difference; and Control the first temperature and the second temperature, and control the surface tension distribution of the liquid film, thereby controlling the condensation of the liquid film.

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