Micro semiconductor structure and method for manufacturing the same

Abstract

A micro-semiconductor structure and a manufacturing method thereof, wherein the micro-semiconductor structure comprises a substrate, a dissociation layer, a protective layer and a micro-semiconductor. The dissociation layer is located on one side of the substrate, the protective layer is located on at least one side of the two sides of the substrate, and the micro-semiconductor is located on the same side of the two sides of the substrate as the dissociation layer. The protective layer has a light source transmittance of less than 20% for a wavelength less than 360nm. Thus, the protective layer can prevent the micro-semiconductor from being irradiated by the laser light source and causing abnormality or damage during the laser dissociation process.

Description

Technical Field

[0001] The present disclosure relates to a micro-semiconductor structure and a manufacturing method thereof, and in particular to a micro-semiconductor structure and a manufacturing method thereof applied in a laser dissociation process. Background Art

[0002] In recent years, various types of micro-semiconductors have been widely used in various electronic devices, such as organic light-emitting diodes (OLED) or micro light-emitting diodes (MicroLED). In the process of manufacturing micro-semiconductors, micro-semiconductors often need to be processed on different substrates, and the laser lift-off (LLO) process is often used to separate the micro-semiconductors from the substrates, so as to facilitate the transfer and processing of the micro-semiconductors between different substrates. However, after the micro-semiconductors are miniaturized to the micron level, during the laser lift-off process, the micro-semiconductors often become abnormal or damaged due to the irradiation of the laser light source. Therefore, the development of a micro-semiconductor structure suitable for the laser lift-off process and its manufacturing method has become an important and urgent problem in the industry. Summary of the invention

[0003] The present disclosure provides a micro-semiconductor structure and a method for manufacturing the same, which reduces the damage rate of the micro-semiconductor structure in a laser dissociation process by configuring a protective layer with low laser light penetration.

[0004] According to an embodiment of the present disclosure, a micro semiconductor structure is provided, comprising a substrate, a dissociation layer, a protective layer and a micro semiconductor. The dissociation layer is located on one side of the substrate, the protective layer is located on at least one side of the two sides of the substrate, and the micro semiconductor is located on the same side of the two sides of the substrate as the dissociation layer. The protective layer has a transmittance of less than 20% for a light source with a wavelength less than 360 nm.

[0005] According to the micro-semiconductor structure of the embodiment described in the preceding paragraph, the Young's modulus of the protection layer is greater than the Young's modulus of the dissociation layer.

[0006] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, the dissociation layer, the protective layer and the micro-semiconductor are all located on the same side of the substrate, and the dissociation layer is disposed on the substrate, the protective layer is disposed on the dissociation layer, and the micro-semiconductor is disposed on the protective layer.

[0007] The micro-semiconductor structure according to the above-mentioned embodiment may further include an easily removable layer disposed between the protective layer and the micro-semiconductor.

[0008] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, the easily removable layer and the dissociation layer are both made of organic materials, and the protection layer is made of inorganic materials.

[0009] According to the micro-semiconductor structure of the above-mentioned embodiment, the protection layer is a patterned structure.

[0010] According to the micro semiconductor structure of the embodiment described in the previous paragraph, the ratio of a total area of ​​the protection layer projected onto the substrate to an area of ​​the dissociation layer projected onto the substrate may be between 0.5 and 1.

[0011] According to the micro semiconductor structure of the embodiment described in the previous paragraph, the dissociation layer can be correspondingly disposed under the protection layer, and a projection area of ​​the protection layer on the substrate is greater than or equal to a projection area of ​​the dissociation layer on the substrate.

[0012] According to the micro-semiconductor structure of the above-mentioned embodiment, the protection layer may include a metal material.

[0013] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, the protection layer may include a first protection layer and a second protection layer, and the second protection layer and the first protection layer may be alternately arranged.

[0014] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, any position of the projection of the micro-semiconductor on the substrate overlaps with the projection of the first protective layer or the second protective layer on the substrate.

[0015] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, a cross-sectional area of ​​the dissociation layer perpendicular to the substrate gradually decreases in a direction toward the substrate.

[0016] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, the micro-semiconductor further includes an insulating layer, and the insulating layer is located between the micro-semiconductor and the protective layer.

[0017] According to the micro-semiconductor structure of the embodiment described in the previous paragraph, the projection area of ​​the micro-semiconductor or the protective layer on the substrate is larger than the projection area of ​​the dissociation layer on the substrate.

[0018] According to an embodiment of the present disclosure, a method for manufacturing a micro-semiconductor structure is provided, comprising a substrate providing step, a dissociation layer setting step, a protective layer setting step and a micro-semiconductor setting step. The substrate providing step is to provide a substrate. The dissociation layer setting step is to set a dissociation layer on one side of the substrate. The protective layer setting step is to set a protective layer on at least one side of the substrate. The micro-semiconductor setting step is to set a micro-semiconductor on the same side of the substrate as the dissociation layer. The protective layer has a transmittance of less than 20% for light sources with a wavelength less than 360nm.

[0019] The method for manufacturing the micro semiconductor structure according to the embodiment described in the previous paragraph may further include an easily removable layer setting step. The easily removable layer setting step is to set an easily removable layer between the micro semiconductor and the protective layer.

[0020] According to the method for manufacturing a micro semiconductor structure of the embodiment described in the previous paragraph, when the dissociation layer is dissociated by the aforementioned light source, the light source and the protective layer can be correspondingly disposed on two sides of the dissociation layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a micro-semiconductor structure in a first embodiment of the present disclosure is shown;

[0022] Figure 2 A schematic structural diagram showing a micro-semiconductor structure according to a second embodiment of the present disclosure;

[0023] Figure 3 A schematic structural diagram of a micro-semiconductor structure according to a third embodiment of the present disclosure is shown;

[0024] Figure 4 A schematic structural diagram showing a micro-semiconductor structure according to a fourth embodiment of the present disclosure;

[0025] Figure 5 A schematic structural diagram showing a micro-semiconductor structure according to a fifth embodiment of the present disclosure;

[0026] Figure 6 A schematic structural diagram showing a micro-semiconductor structure according to a sixth embodiment of the present disclosure;

[0027] Figure 7 A schematic structural diagram showing a micro-semiconductor structure according to a seventh embodiment of the present disclosure;

[0028] Figure 8 A schematic structural diagram showing a micro-semiconductor structure according to an eighth embodiment of the present disclosure;

[0029] Fig. 9 A schematic structural diagram showing a micro-semiconductor structure according to a ninth embodiment of the present disclosure;

[0030] Fig.10 A schematic structural diagram of a micro-semiconductor structure according to a tenth embodiment of the present disclosure is shown;

[0031] Fig.11 A flowchart showing the steps of a method for manufacturing a micro-semiconductor structure according to an eleventh embodiment of the present disclosure; and

[0032] Fig.12 A flow chart showing the steps of a method for manufacturing a micro-semiconductor structure in a twelfth embodiment according to the present disclosure.

[0033] Description of reference numerals:

[0034] 100,200,300,400,500,600,700,800,900,1000: Micro semiconductor structures

[0035] 110,210,310,410,510,610,710,810,910,1010: Substrate

[0036] 120,220,320,420,520,620,720,820,920,1020: dissociation layer

[0037] 130,230,330,430,530,630,730,830,930,1030: protective layer

[0038] 331,431,931,1031: First protection layer

[0039] 332,432,932,1032: Second protection layer

[0040] 140,240,340,440,540,640,740,840,940,1040: Micro semiconductors

[0041] 532: First protection layer

[0042] 542: Insulation layer

[0043] 250,350: easy to remove layer

[0044] S100, S200: Method for manufacturing micro-semiconductor structures

[0045] S110, S210: Substrate providing step

[0046] S120, S220: Dissociation layer setting steps

[0047] S130, S230: Protection layer setting steps

[0048] S240: Easy-to-remove layer setup steps

[0049] S150, S250: Micro semiconductor setup steps

[0050] Dd, Dc, Dp: thickness

[0051] L: Light source DETAILED DESCRIPTION

[0052] Figure 1 FIG. 1 is a schematic diagram showing a micro-semiconductor structure 100 according to a first embodiment of the present disclosure. Figure 1It can be known that the micro-semiconductor structure 100 includes a substrate 110 , a dissociation layer 120 , a protection layer 130 and a micro-semiconductor 140 , wherein the dissociation layer 120 , the protection layer 130 and the micro-semiconductor 140 are sequentially disposed on the substrate 110 .

[0053] In detail, in the first embodiment, the dissociation layer 120 is located on one side of the substrate 110 and is disposed above the substrate 110. The dissociation layer 120 is a photodissociation material. During the manufacturing process of the micro-semiconductor structure 100, it can be dissociated by irradiation with a light source L (wavelength of about 240nm to 360nm), so that the protective layer 130 and the micro-semiconductor 140 on it can be separated from the substrate 110 and transferred to another target substrate (such as a wired substrate) to facilitate subsequent processes. The material of the dissociation layer 120 can be an organic material, including an organic polymer material such as polyimide, benzocyclobutene, phenol formaldehyde resin, epoxy resin, polyisoprene rubber or a combination thereof, but the present disclosure is not limited thereto.

[0054] Furthermore, the protective layer 130 is disposed on the dissociation layer 120, and the protective layer 130 and the dissociation layer 120 are located on the same side of the substrate 110, but the present disclosure is not limited thereto. The transmittance of the protective layer 130 to a light source with a wavelength less than 360 nm is less than 20% (i.e., between 0% and 20%), so that the protective layer 130 can prevent the micro semiconductor 140 from being irradiated by the light source L and causing abnormality or damage during the photodissociation process. Here, the light source L is a laser light source.

[0055] Furthermore, the Young's modulus of the protective layer 130 may be greater than the Young's modulus of the dissociation layer 120. Thus, the protective layer 130 may serve as a protective buffer layer to reduce the impact on the micro semiconductor 140 structure and the influence of the light source L on the micro semiconductor 140 during transfer.

[0056] Specifically, the material of the protective layer 130 may be an inorganic material or a metal material, and may be a nitride, an oxide, a metal or an alloy. Specifically, the material of the protective layer 130 may be silicon oxide, silicon nitride, silicon oxynitride or a combination thereof, and may also be aluminum, silver, gold, an alloy thereof or an oxide thereof, but is not limited thereto. Specifically, the protective layer 130 may be removed in a subsequent process as required, and the removal process may be an etching process.

[0057] The micro semiconductor 140 is disposed on the protective layer 130, and the micro semiconductor 140 and the dissociation layer 120 are on the same side of the substrate 110. In the first embodiment, the dissociation layer 120, the protective layer 130, and the micro semiconductor 140 are all on the same side of the substrate 110, but the present disclosure is not limited thereto. Specifically, the size of the micro semiconductor 140 is less than or equal to 100 microns and can be a micro light emitting diode, a micro laser diode, a micro photodiode. However, the present disclosure is not limited thereto. In another embodiment, the micro semiconductor 140 can also be a micro semiconductor 140 with controllable execution of a predetermined electronic function, such as a microdiode, a micro transistor, a micro integrated circuit, a micro sensor, but is not limited thereto.

[0058] The thickness of the dissociation layer 120 perpendicular to the substrate 110 is Dd, the thickness of the protective layer 130 perpendicular to the substrate 110 is Dp, and the thickness of the micro semiconductor 140 perpendicular to the substrate 110 is Dc, which can satisfy the following conditions: 0.1 < Dp / Dd. Thus, it can be avoided that the protective layer 130 is too small to provide sufficient protection. In addition, it can satisfy the following conditions: Dp / Dc < 1. Thus, it can be avoided that the protective layer 130 is too large to be removed subsequently. Further, Dd can be between 500 nm and 6000 nm, Dp can be between 50 nm and 500 nm, and Dc can be between 4 microns and 10 microns. Thus, the protective layer 130 can also protect the micro semiconductor 140 from being abnormally damaged by the light source L during the laser dissociation process.

[0059] The wavelength absorption rate of the dissociation layer 120 for the light source L can be greater than the wavelength absorption rate of the protective layer 130 for the light source L, and the material erosion rate of the dissociation layer 120 for the light source L can be greater than the material erosion rate of the protective layer 130 for the light source L. Thus, in the laser dissociation process, the dissociation layer 120 can be removed prior to the protective layer 130, and the unabsorbed light can be blocked due to the low transmittance of the protective layer 130, and further, the protective layer 130 can better protect the micro semiconductor 140 from being abnormally damaged by the laser light irradiation.

[0060] Figure 2 A schematic diagram showing the micro semiconductor structure 200 in the second embodiment according to the present disclosure. Figure 2It can be seen that the micro semiconductor structure 200 includes a substrate 210, a dissociation layer 220, a protection layer 230, a micro semiconductor 240 and an easily removable layer 250. The dissociation layer 220, the protection layer 230, the easily removable layer 250 and the micro semiconductor 240 are sequentially disposed on the substrate 210.

[0061] In detail, in the second embodiment, the dissociation layer 220 is located on one side of the substrate 210 and is disposed above the substrate 210. The protective layer 230 is disposed on the dissociation layer 220, and the protective layer 230 and the dissociation layer 220 are located on the same side of the substrate 210. The micro-semiconductor 240 is located on the same side of the protective layer 230 and the dissociation layer 220, and the micro-semiconductor 240 and the dissociation layer 220 are located on the same side of the substrate 210. The materials and sizes of the dissociation layer 220, the protective layer 230 and the micro-semiconductor 240 can be the same or similar to those of the first embodiment, and will not be repeated in this and subsequent embodiments.

[0062] The easily removable layer 250 is disposed between the protective layer 230 and the micro-semiconductor 240, and the easily removable layer 250 and the dissociation layer 220 are located on the same side of the substrate 210. In the subsequent process, since the protective layer 230 needs to be removed, the easily removable layer 250 is disposed to facilitate separation of the protective layer 230 and the micro-semiconductor 240. In detail, the easily removable layer 250 can be etched by an etching solution to remove the protective layer 230, and the etching rate of the etching solution to the easily removable layer 250 is greater than the etching rate of the protective layer 230, but it is not limited thereto. In this way, in the subsequent manufacturing process, it is more convenient to remove the protective layer 230. The material of the easily removable layer 250 can be an organic material, including an organic polymer material such as polyimide, benzocyclobutene, phenol formaldehyde resin, epoxy resin, polyisoprene rubber or a combination thereof. Furthermore, the material of the easily removable layer 250 may be the same as that of the dissociation layer 220 , which can reduce the complexity of the process, but the present disclosure is not limited thereto.

[0063] Figure 3 FIG. 2 is a schematic diagram of a micro-semiconductor structure 300 according to a third embodiment of the present disclosure. Figure 3 As can be seen, the micro semiconductor structure 300 includes a substrate 310, a dissociation layer 320, a protection layer 330, a micro semiconductor 340 and an easily removable layer 350. The dissociation layer 320, the protection layer 330, the easily removable layer 350 and the micro semiconductor 340 are located on the same side of the substrate 310.

[0064] In detail, in the third embodiment, the dissociation layer 320 is located and disposed on one side of the substrate 310. The protective layer 330 is a patterned structure, including a first protective layer 331, which is disposed on the dissociation layer 320 and is located on the same side of the substrate 310 as the dissociation layer 320. The first protective layer 331 is also a patterned structure, wherein the patterned structure can be a discontinuous film layer structure, but is not limited thereto. The easily removable layer 350 is disposed between the first protective layer 331 and the micro semiconductor 340. The micro semiconductor 340 is disposed on the easily removable layer 350, and the micro semiconductor 340 and the dissociation layer 320 are located on the same side of the substrate 310.

[0065] In detail, the first protective layer 331 has a total area Apt, wherein the total area Apt is the sum of the areas of the first protective layer 331 projected onto the substrate 310; the dissociation layer 320 has an area Ad, which is the area of ​​the dissociation layer 320 projected onto the substrate 310. A ratio Apt / Ad of the total area Apt of the first protective layer 331 to the area Ad of the dissociation layer 320 is greater than 0.5 and less than 1. A ratio less than or equal to 0.5 is insufficient for protecting the micro semiconductor. In addition, Apt / Ad may be greater than 0.5 and less than or equal to 0.8. In this way, the first protective layer 331 can also effectively protect the micro semiconductor 340 from abnormalities or damage caused by irradiation of the light source L during the laser dissociation process.

[0066] Furthermore, in the third embodiment, the protective layer 330 may further include a second protective layer 332, wherein the second protective layer 332 is a patterned structure. The second protective layer 332 includes a metal material, which may be a metal, a metal alloy or a metal oxide, but the present disclosure is not limited to the aforementioned materials. The first protective layer 331 may also be arranged alternately with the second protective layer 332. In the third embodiment, the first protective layer 331 and the second protective layer 332 are located on the same side of the substrate 310, and a projection area of ​​the first protective layer 331 on the substrate 310 partially overlaps with a projection area of ​​the second protective layer 332 on the substrate 310, but may not overlap, and is not limited to the disclosure of this embodiment. Better yet, any position of the projection of the micro semiconductor 340 on the substrate 310 overlaps with the projection of the first protective layer 331 on the substrate 310, the projection of the second protective layer 332 on the substrate 310, or one of the two. Since the light source L is not likely to affect the second protective layer 332 comprising a metal material, the second protective layer 332 and the first protective layer 331 are arranged alternately, which can more effectively protect the micro semiconductor 340 itself from being damaged by the light source L. It is particularly noted that the second protective layer 332 can be flush with the surface of the micro semiconductor 340 (not shown) or be arranged below the micro semiconductor 340, which is not limited to the content of the present disclosure. In addition, the second protective layer 332 can be used as an electrode of the micro semiconductor 340, and has the functions of protecting and electrically connecting the micro semiconductor 340, thereby increasing the process yield.

[0067] Figure 4 FIG. 4 is a schematic diagram of a micro-semiconductor structure 400 according to a fourth embodiment of the present disclosure. Figure 4 It can be known that the micro-semiconductor structure 400 includes a substrate 410 , a dissociation layer 420 , a protection layer 430 and a micro-semiconductor 440 , and the substrate 410 , the dissociation layer 420 and the micro-semiconductor 440 are arranged in sequence.

[0068] Specifically, in the fourth embodiment, the dissociation layer 420 is located and disposed on one side of the substrate 410. The protective layer 430 is a patterned structure and includes a first protective layer 431, which is disposed on the other side of the substrate 410; that is, the first protective layer 431 and the dissociation layer 420 are located on different sides of the substrate 410. The micro semiconductor 440 is disposed on the dissociation layer 420 and is located on the same side of the substrate 410 as the dissociation layer 420.

[0069] In detail, the first protective layer 431 has a total area Apt, wherein the total area Apt is the sum of the areas of the first protective layer 431 projected onto the substrate 410; the dissociation layer 420 has an area Ad, which is the area of ​​the dissociation layer 420 projected onto the substrate 410. A ratio Apt / Ad of the total area Apt of the first protective layer 431 to the area Ad of the dissociation layer 420 is between 0.5 and 1. In addition, Apt / Ad may be greater than 0.5 and less than or equal to 0.8. In this way, the first protective layer 431 can also protect the micro semiconductor 440 from being irradiated by the light source L and causing abnormality or damage during the laser dissociation process.

[0070] In the fourth embodiment, the protective layer 430 may further include a second protective layer 432, and the second protective layer 432 is a patterned structure. The second protective layer 432 includes a metal material, which may be a metal, a metal alloy or a metal oxide. The first protective layer 431 may be arranged alternately with the second protective layer 432. In detail, an area of ​​the first protective layer 431 on the substrate 410 partially overlaps with a projection area of ​​the second protective layer 432 on the substrate 410. It is worth mentioning that the area where the projection area of ​​the second protective layer 432 on the substrate 410 overlaps with the first protective layer 431 is less than 10% of the area of ​​the second protective layer 432 facing the substrate 410. In this way, it can be ensured that in the laser dissociation step, enough dissociation layer 420 can be irradiated by the light source L and dissociated, so that the micro semiconductor 440 can be smoothly separated from the substrate 410, and without configuring a protective layer 430 with an excessively large area, the effect of effectively protecting the micro semiconductor 440 from the influence of the light source L can be achieved, reducing the use of excessive protective layer 430 materials and reducing manufacturing costs. Better yet, any position of the projection of the micro semiconductor 440 on the substrate 410 overlaps with the projection of the first protective layer 431 on the substrate 410, the projection of the second protective layer 432 on the substrate 410, or one of the two. The first protective layer 431 and the second protective layer 432 can be respectively disposed on two sides of the substrate 410. In this way, the micro semiconductor 440 itself can be more effectively protected from being damaged by the light source L. It is particularly noted that the second protective layer 432 can be flush with the surface of the micro semiconductor 440 (not shown) or be disposed below the micro semiconductor 440. In addition, the second protective layer 432 can serve as an electrode of the micro semiconductor 440, and has the functions of protecting and electrically connecting the micro semiconductor 440, thereby increasing the process yield.

[0071] Figure 5 FIG. 5 is a schematic diagram of a micro-semiconductor structure 500 according to a fifth embodiment of the present disclosure. Figure 5 It can be known that the micro-semiconductor structure 500 includes a substrate 510 , a dissociation layer 520 , a protection layer 530 and a micro-semiconductor 540 , wherein the dissociation layer 520 , the protection layer 530 and the micro-semiconductor 540 are sequentially disposed on the substrate 510 .

[0072] In detail, the dissociation layer 520 is located and disposed on one side of the substrate 510. The protection layer 530 is disposed on the dissociation layer 520 and is located on the same side of the substrate 510 as the dissociation layer 520. The micro semiconductor 540 is disposed on the protection layer 530 and is located on the same side of the substrate 510 as the dissociation layer 520. The protection layer 530 is a patterned structure and includes a first protection layer 532.

[0073] In the fifth embodiment, the micro semiconductor 540 may further include an insulating layer 542, where the insulating layer 542 is disposed on the surface of the micro semiconductor 540 facing the substrate 510 and is configured between the first protective layers 532; specifically, the insulating layer 542 is located between the protective layer 530 and the micro semiconductor 540. Since the protective layer may be a discontinuous structure, the micro semiconductor 540 still has a chance to be affected by part of the laser light. Through the setting of the insulating layer 542, the micro semiconductor 540 can be more comprehensively protected from being irradiated by the light source L and causing abnormalities or damage. Preferably, any position of the projection of the micro semiconductor 540 on the substrate 510 overlaps with the projection of the insulating layer 542 or the first protective layer 532 on the substrate 510. Specifically, the light transmittance of the insulating layer 542 to a light source with a wavelength less than 360 nm is less than 20%, which can further prevent the micro semiconductor 540 from being affected by the light source L in the laser dissociation process. The first protective layer 532 may be flush with the surface of the micro semiconductor 540 (not shown in the figure) or disposed below the micro semiconductor 540. In addition, the first protective layer 532 can serve as an electrode of the micro semiconductor 540, and at the same time has the functions of protecting and electrically connecting the micro semiconductor 540, increasing the process yield.

[0074] Figure 6 FIG. shows a schematic diagram of a micro semiconductor structure 600 in a sixth embodiment according to the present disclosure. Figure 6 As can be seen, the micro semiconductor structure 600 includes a substrate 610, a dissociation layer 620, a protective layer 630, and a micro semiconductor 640, where the dissociation layer 620, the protective layer 630, and the micro semiconductor 640 are sequentially disposed on the substrate 610.

[0075] Specifically, the dissociation layer 620 is located on and disposed on one side of the substrate 610. The protective layer 630 is disposed on the dissociation layer 620 and is on the same side of the substrate 610 as the dissociation layer 620. The micro semiconductor 640 is disposed on the protective layer 630 and is on the same side of the substrate 610 as the dissociation layer 620.

[0076] Figure 6 In, the micro semiconductor 640 has a projected area Ac on the substrate 610; the protective layer 630 has a projected area Ap on the substrate 610; the dissociation layer 620 has a projected area Ad' on the substrate 610, where the projected area Ac of the micro semiconductor 640 on the substrate 610 and the projected area Ap of the protective layer 630 on the substrate 610 are greater than the projected area Ad' of the dissociation layer 620 on the substrate 610. In addition, it can satisfy the following conditions: 0.5 < Ad' / Ac < 0.8. If the ratio is too small, the yield of transferring the micro semiconductor structure 600 will be reduced. Thus, without affecting the process and the quality of the micro semiconductor structure 600, the usage amount of the dissociation layer 620 can be reduced to lower the production cost.

[0077] Figure 7 FIG. 1 is a schematic diagram of a micro-semiconductor structure 700 according to a seventh embodiment of the present disclosure. Figure 7 It can be known that the micro-semiconductor structure 700 includes a substrate 710 , a dissociation layer 720 , a protection layer 730 and a micro-semiconductor 740 , wherein the dissociation layer 720 , the protection layer 730 and the micro-semiconductor 740 are sequentially disposed on the substrate 710 .

[0078] In detail, the protective layer 730 and the dissociation layer 720 are patterned structures, the dissociation layer 720 is correspondingly arranged under the protective layer 730, and the projection area of ​​the protective layer 730 on the substrate 710 is larger than the projection area of ​​the dissociation layer 720 parallel to the substrate 710. Since in the laser dissociation process, the light source L only needs to irradiate the dissociation layer 720, with the above-mentioned features, the irradiation range of the light source L can be controlled within the area of ​​the protective layer 730 projected on the substrate 710, so as to effectively protect the micro semiconductor 740 without affecting the dissociation effect of the dissociation layer 720. It is particularly noted that the protective layer 730 can be flush with the surface of the micro semiconductor 740 (not shown) or be arranged under the micro semiconductor 740. In addition, the protective layer 730 can include a metal material and can be used as an electrode of the micro semiconductor 740; that is, the electrode of the micro semiconductor 740 can have the characteristics of the protective layer 730. In this way, the complexity of the micro semiconductor structure 700 can be simplified, thereby reducing the production process and cost.

[0079] Figure 8 FIG. 8 is a schematic diagram of a micro-semiconductor structure 800 according to an eighth embodiment of the present disclosure. Figure 8 It can be seen that the micro semiconductor structure 800 includes a substrate 810, a dissociation layer 820, a protective layer 830 and a micro semiconductor 840, wherein the substrate 810, the dissociation layer 820, the protective layer 830 and the micro semiconductor 840 are arranged in sequence. In addition, the protective layer 830 can be flush with the surface of the micro semiconductor 840 (not shown) or disposed below the micro semiconductor 840.

[0080] In detail, the cross-sectional area of ​​the dissociation layer 820 perpendicular to the substrate 810 gradually decreases from the micro-semiconductor 840 toward the substrate 810. In other words, the width of the dissociation layer 820 in the direction parallel to the substrate 810 gradually decreases from the connection between the dissociation layer 820 and the micro-semiconductor 840 to the substrate 810. The irradiation center of the light source L can focus on the connection between the dissociation layer 820 and the substrate 810. Taking laser light as an example, laser light has the characteristic of strong energy at the irradiation center, and laser dissociation can be performed on the dissociation layer 820 at the connection between the dissociation layer 820 and the substrate 810. In this way, in the dissociation process, only a small amount of the dissociation layer 820 at the connection between the dissociation layer 820 and the substrate 810 can be dissociated, thereby reducing production time and cost. However, the dissociation layer 820 is only used to illustrate the purpose of the eighth embodiment, and the present invention does not limit the type of light source L or the dissociation layer 820 to a specific configuration due to the above example.

[0081] Fig. 9 FIG. 1 is a schematic diagram of a micro-semiconductor structure 900 according to a ninth embodiment of the present disclosure. Fig. 9 It can be seen that the micro-semiconductor structure 900 includes a substrate 910 , a dissociation layer 920 , a protection layer 930 and a micro-semiconductor 940 , wherein the dissociation layer 920 , the protection layer 930 and the micro-semiconductor 940 are located on the same side of the substrate 910 .

[0082] The protective layer 930 includes a first protective layer 931 and a second protective layer 932. The first protective layer 931 and the second protective layer 932 are both patterned and located on the same side of the substrate 910, and the second protective layer 932 and the first protective layer 931 are arranged alternately. In other words, the projection area of ​​the first protective layer 931 on the substrate 910 and the projection area of ​​the second protective layer 932 on the substrate 910 partially overlap. Furthermore, the dissociation layer 920 is correspondingly arranged under the first protective layer 931, and the dissociation layer 920 is arranged between the substrate 910 and the micro-semiconductor 940. In this way, by the arrangement of the first protective layer 931 and the second protective layer 932, the micro-semiconductor 940 can be more completely protected from abnormalities or damage caused by the irradiation of the light source L. The first protective layer 931 can be flush with the surface of the micro-semiconductor 940 (not shown) or arranged below the micro-semiconductor 940. Furthermore, the first protective layer 931 can be a plurality of electrodes of the micro-semiconductor 940.

[0083] In addition, the projection area of ​​the first protective layer 931 on the substrate 910 is larger than the projection area of ​​the dissociation layer 920 on the substrate 910. Thus, during the laser dissociation process, the first protective layer 931 can effectively protect the micro semiconductor 940 from the light source L, and in conjunction with the second protective layer 932, the light source L can be more completely blocked from entering the micro semiconductor 940.

[0084] Fig.10FIG. 1 is a schematic diagram of a micro-semiconductor structure 1000 in a tenth embodiment according to the present disclosure. Fig.10 It can be known that the micro-semiconductor structure 1000 includes a substrate 1010 , a dissociation layer 1020 , a protection layer 1030 and a micro-semiconductor 1040 , wherein the dissociation layer 1020 and the micro-semiconductor 1040 are located on the same side of the substrate 1010 .

[0085] The protective layer 1030 includes a patterned first protective layer 1031 and a patterned second protective layer 1032. The first protective layer 1031, the dissociation layer 1020 and the micro-semiconductor 1040 are located on the same side of the substrate 1010. The second protective layer 1032 is located on the other side of the substrate 1010, and the second protective layer 1032 and the first protective layer 1031 are arranged alternately. In this way, the coverage of the protective layer 1030 is increased, and the micro-semiconductor 1040 can be effectively protected from abnormalities or damage caused by the light source L. The first protective layer 1031 can be flush with the surface of the micro-semiconductor 1040 (not shown) or arranged below the micro-semiconductor 1040. Furthermore, the first protective layer 1031 can be a plurality of electrodes of the micro-semiconductor 1040.

[0086] In addition, the projection area of ​​the first protective layer 1031 on the substrate 1010 is larger than the projection area of ​​the dissociation layer 1020 on the substrate 1010. Thus, during the laser dissociation process, the first protective layer 1031 can effectively protect the micro semiconductor 1040 from the light source L, and in conjunction with the second protective layer 1032, the light source L can be more completely blocked from entering the micro semiconductor 1040.

[0087] Fig.11 FIG. 1 is a flowchart showing the steps of a method S100 for manufacturing a micro-semiconductor structure in the eleventh embodiment of the present disclosure. Fig.11 It can be seen that the manufacturing method S100 of the micro-semiconductor structure includes a substrate providing step S110, a dissociation layer setting step S120, a protection layer setting step S130 and a micro-semiconductor setting step S150. For a clearer and more complete description, the eleventh embodiment will be used in conjunction with Figure 7The structure, elements and symbols of the micro-semiconductor structure 700 of the seventh embodiment are discussed, but the micro-semiconductor structure manufactured by the eleventh embodiment is not limited thereto. The substrate providing step S110 provides a substrate 710; the dissociation layer setting step S120 sets a dissociation layer 720 on one side of the substrate 710; the protective layer setting step S130 sets a protective layer 730 on at least one side of the substrate 710; the micro-semiconductor setting step S150 sets a micro-semiconductor 740 on the same side as the dissociation layer 720 on both sides of the substrate 710, wherein the transmittance of the protective layer 730 to the light source with a wavelength less than 360nm is less than 20%. Thus, the micro-semiconductor structure 700 provided by the micro-semiconductor structure manufacturing method S100 includes a protective layer 730, which can protect the micro-semiconductor 740 from being irradiated by the light source L and causing abnormality or damage during the laser dissociation process.

[0088] It must be noted that in the eleventh embodiment, the material, material characteristics and size of the components provided in each step can be any of those in the aforementioned embodiments and adjusted according to process requirements, which will not be further elaborated herein.

[0089] In addition, with Figure 7 and Fig.11 It can be seen that the protective layer 730 is arranged corresponding to the dissociation layer 720, and the projection area of ​​the protective layer 730 on the substrate 710 is larger than the projection area of ​​the dissociation layer 720 on the substrate 710. When the dissociation layer 720 is dissociated by the light source L, the light source L can be arranged on both sides of the dissociation layer 720 corresponding to the protective layer 730, wherein the wavelength of the laser light source is 240nm to 360nm. In this way, the micro semiconductor 740 can be effectively protected without affecting the dissociation effect of the dissociation layer 720.

[0090] Fig.12 FIG. 1 is a flowchart showing the steps of a method S200 for manufacturing a micro-semiconductor structure in the twelfth embodiment of the present disclosure. Fig.12 It can be seen that the manufacturing method S200 of the micro semiconductor structure includes a substrate providing step S210, a dissociation layer setting step S220, a protection layer setting step S230, an easy-to-remove layer setting step S240 and a micro semiconductor setting step S250. For a clearer and more complete description, the twelfth embodiment will be used in conjunction with Figure 2The structure, elements and symbols of the micro-semiconductor structure 200 of the second embodiment are discussed, but the micro-semiconductor structure manufactured by the twelfth embodiment is not limited thereto. The substrate providing step S210 provides a substrate 210; the dissociation layer setting step S220 sets a dissociation layer 220 on one side of the substrate 210; the protective layer setting step S230 sets a protective layer 230 on at least one side of the substrate 210; the easily removable layer setting step S240 sets an easily removable layer 250 on the protective layer 230; the micro-semiconductor setting step S250 sets a micro-semiconductor 240 on the same side of the two sides of the substrate 210 as the dissociation layer 220, wherein the easily removable layer 250 is located between the micro-semiconductor 240 and the protective layer 230. In this way, in the subsequent manufacturing process, it can be more convenient to remove the protective layer 230. It is particularly noted that the protective layer 230 can be formed into a patterned structure by yellow photoetching such processes, and can include multiple protective layers, such as Figure 3 The first protection layer 331 and the second protection layer 332 of the micro semiconductor structure 300 of the third embodiment can be adjusted according to process requirements and will not be further described herein.

[0091] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the concept and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the claims.

Claims

1. A micro semiconductor structure, characterized in that: Include: a substrate; a dissociation layer located on one side of the substrate; a protective layer, located on at least one side of the substrate and directly connected to the dissociation layer, the protective layer being disposed on the dissociation layer, wherein the protective layer is a patterned structure; A micro-semiconductor is located on a side of the dissociated layer away from the substrate; as well as an easily removable layer disposed between a portion of the patterned structure and the micro-semiconductor, wherein a portion of the easily removable layer is in direct contact with the dissociation layer; The protection layer has a transmittance of less than 20% for a light source with a wavelength less than 360 nm, and the dissociation layer is made of a photodissociation material and can be dissociated by being irradiated by the light source.

2. The micro-semiconductor structure according to claim 1, characterized in that: A Young's modulus of the protection layer is greater than a Young's modulus of the dissociation layer.

3. The micro-semiconductor structure according to claim 1, characterized in that: The dissociation layer, the protection layer and the micro-semiconductor are all located on the same side of the substrate, and the dissociation layer is arranged on the substrate, and the micro-semiconductor is arranged on the protection layer.

4. The micro-semiconductor structure according to claim 3, characterized in that: The easily removable layer and the dissociation layer are both made of organic materials, and the protection layer is made of inorganic materials.

5. The micro-semiconductor structure according to claim 1, characterized in that: The ratio of a total area of ​​the protective layer projected onto the substrate to an area of ​​the dissociation layer projected onto the substrate is between 0.5 and 1.

6. The micro-semiconductor structure according to claim 1, characterized in that: The dissociation layer is correspondingly arranged under the protection layer, and a projection area of ​​the protection layer on the substrate is greater than or equal to a projection area of ​​the dissociation layer on the substrate.

7. The micro-semiconductor structure according to claim 6, characterized in that: The protective layer includes a metallic material.

8. The micro-semiconductor structure according to claim 1, characterized in that: The protection layer includes a first protection layer and a second protection layer, and the second protection layer and the first protection layer are arranged alternately.

9. The micro-semiconductor structure according to claim 8, characterized in that: Any position of the projection of the micro semiconductor on the substrate overlaps with the projection of the first protection layer or the second protection layer on the substrate.

10. The micro-semiconductor structure according to claim 1, characterized in that: A cross-sectional area of ​​the dissociation layer perpendicular to the substrate gradually decreases toward the substrate.

11. The micro-semiconductor structure according to claim 1, characterized in that: A projection area of ​​the micro-semiconductor on the substrate is larger than a projection area of ​​the dissociation layer on the substrate.

12. A method for manufacturing a micro semiconductor structure, characterized in that: Include: A substrate providing step, providing a substrate; a dissociation layer setting step, setting a dissociation layer on one side of the substrate; a protective layer setting step, setting a protective layer on at least one side of the substrate and making the protective layer directly connected to the dissociation layer, wherein the protective layer is set on the dissociation layer, wherein the protective layer is a patterned structure; a micro-semiconductor arrangement step, arranging a micro-semiconductor on a side of the dissociation layer away from the substrate; as well as an easily removable layer setting step, setting an easily removable layer between a portion of the patterned structure and the micro-semiconductor, wherein a portion of the easily removable layer is in direct contact with the dissociation layer; The protective layer has a transmittance of less than 20% for a light source with a wavelength less than 360 nm, and the dissociation layer is made of a photodissociation material and can be dissociated by being irradiated by the light source.

13. The method for manufacturing a micro-semiconductor structure according to claim 12, characterized in that: When the dissociation layer is dissociated by the light source, the light source and the protective layer are correspondingly arranged on two sides of the dissociation layer.

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