Structure for Quantum Dot Blocking Rib and Method for Preparing the Same

Abstract

The present invention relates to a structure for a quantum dot barrier rib and a method for manufacturing the same. The structure for a quantum dot barrier rib of the present invention includes a cured film having a uniform film thickness and an appropriate film thickness range. Here, the reflectance R measured by the SCI (including the specular reflection component) method is reduced SCI and the reflectance R measured by the SCE (excluding the specular reflection component) method SCE , and the ratio (R SCE / R SCI ) between them is appropriately adjusted so that characteristics such as high light-shielding characteristics and low reflectance can be satisfied simultaneously while the resolution and pattern characteristics remain excellent. In addition, when manufacturing the structure for a quantum dot barrier rib, a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier rib can be formed in a single development process. Therefore, it can be advantageously used for a quantum dot display.

Description

Technical Field

[0001] The present invention relates to a structure for a quantum dot barrier rib (the structure satisfying characteristics such as high light-shielding characteristics and low reflectivity) and a method for preparing the same. Background Art

[0002] In recent years, interest in various electronic devices employing quantum dots (QDs) has increased.

[0003] Quantum dots are materials in which nanocrystals of semiconductor materials having a diameter of about 10 nm or less exhibit quantum confinement effects. Although they are composed of thousands or more electrons, most electrons are firmly bound to atomic nuclei, such that the number of unbound free electrons is limited to about 1 to 100. In such a case, the energy levels of electrons are discontinuously restricted to exhibit electrical and optical characteristics different from those of a semiconductor in a bulk state forming a continuous band. These quantum dots can generate various colors by generating light wavelengths of different lengths for each particle size even without changing the material type. Since they have the advantages of high color purity and light safety compared to conventional light emitters, they are currently used in various fields such as displays, solar cells, biosensors, and lighting devices, and are attracting attention as next-generation light-emitting devices.

[0004] Figure 1 is a schematic diagram illustrating a typical quantum dot device. Referring to Figure 1 , a substrate structure (100) of a quantum dot device includes a transparent substrate (110) and barrier ribs (120) formed to partition regions on the transparent substrate (110). Different quantum dot solutions, that is, a first quantum dot solution (130), a second quantum dot solution (140), and a third quantum dot solution (150) are present in corresponding partitioned regions. The first quantum dot solution (130), the second quantum dot solution (140), and the third quantum dot solution (150) are composed of quantum dots having different energy levels. That is, when the size or material of the quantum dots is manipulated, they are configured to have different emission wavelength bands.

[0005] Here, the barrier ribs (120) not only play a light-shielding role but also play a role in preventing mixing of various color compositions discharged into the partitioned regions. Generally, it can be formed as a film from a photosensitive resin composition.

[0006] In this case, the photosensitive resin composition used should be able to prevent deterioration of contrast and color purity caused by light leakage between pixels. In recent years (during which research on quantum dot devices has been actively conducted), there has been a demand for enhanced performance in terms of excellent pattern characteristics, low reflectivity, and high light-shielding characteristics. In addition, in order to be applied to quantum dot devices, it is necessary to achieve a uniform film and an appropriate film thickness to maintain excellent resolution. For example, if the film is not uniform or the film thickness is too small, it is not suitable for use as a barrier rib, such that the quantum dot solution may overflow the barrier rib, resulting in color mixing or a decrease in resolution. If the film thickness is adjusted by thickly coating the photosensitive resin composition and curing it to solve this problem, it is difficult to achieve uniform coating, and thus there is a problem that stains or contamination may occur.

[0007] Detailed Description of the Invention

[0008] Technical Problem

[0009] Therefore, the present invention aims to provide a structure for a quantum dot barrier rib (the structure satisfying characteristics such as high light-shielding characteristics and low reflectivity, while maintaining excellent resolution and pattern characteristics) and a method for preparing the same.

[0010] Solution to the Problem

[0011] To achieve the above object, the present invention provides a structure for a quantum dot barrier rib, the structure including a cured film formed from a photosensitive resin composition, the photosensitive resin composition including (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant,

[0012] wherein the structure for the quantum dot barrier rib has a total thickness of 6 μm or greater and an optical density of 0.05 / μm to 2.0 / μm, and the reflectance R SCI measured by the SCI (including specular reflection component) method at a wavelength of 550 nm SCE and the reflectance R

[0013] (Relationship 1) R SCI ≤5.0%

[0014] (Relationship 2) R SCE ≤0.5%

[0015] (Relationship 3) 2 ≤ R SCE / R SCI ≤10.

[0016] To achieve another object, the present invention provides a structure for a quantum dot barrier rib, the structure comprising a first cured film formed of a first photosensitive resin composition and a second cured film formed of a second photosensitive resin composition on the first cured film,

[0017] wherein the first photosensitive resin composition, the second photosensitive resin composition, or both contain (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant containing a black colorant, and the structure has a total thickness of 6 μm or more.

[0018] In addition, to achieve another object, the present invention provides a method for preparing a structure for a quantum dot barrier rib, the method comprising coating a first photosensitive resin composition on a substrate and curing it to form a first cured film; coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film; and exposing and developing a multilayer cured film comprising the first cured film and the second cured film to form a pattern and then curing it, wherein the first photosensitive resin composition, the second photosensitive resin composition, or both contain (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant containing a black colorant.

[0019] Advantageous Effects of the Invention

[0020] The structure for a quantum dot barrier rib of the present invention includes a cured film having a uniform film thickness and an appropriate film thickness range. Here, the reflectance R measured by the SCI (including the specular reflection component) method is reduced SCI and the reflectance R measured by the SCE (excluding the specular reflection component) method SCE , and the ratio between them (R SCE / R SCI ) is appropriately adjusted so that characteristics such as high light-shielding characteristics and low reflectance can be satisfied simultaneously while the resolution and pattern characteristics remain excellent.

[0021] In addition, when preparing the structure for a quantum dot barrier rib, a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier rib can be formed in a single developing process. Therefore, it can be advantageously used for a quantum dot display. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram illustrating a typical quantum dot device.

[0023] Figure 2 is a schematic diagram of a structure for a quantum dot barrier rib comprising two cured films according to an embodiment of the present invention.

[0024] Figure 3 is a schematic view of a structure for a quantum dot barrier rib including a three-layer cured film according to an embodiment of the present invention.

[0025] Figure 4 is a schematic view of a structure for a quantum dot barrier rib including an n-layer cured film according to an embodiment of the present invention.

[0026] Figure 5 are photographs of cross-sections and sides of structures for quantum dot barrier ribs of Examples 1 to 13 observed with an optical microscope.

[0027] Figure 6 are photographs of cross-sections and sides of structures for quantum dot barrier ribs of Comparative Examples 1 to 12 observed with an optical microscope.

[0028] Best mode for carrying out the present invention

[0029] The present invention is not limited to those described below. On the contrary, it can be modified into various forms as long as the gist of the present invention is not changed.

[0030] Throughout this specification, unless otherwise clearly stated, when a part is referred to as "comprising" an element, it should be understood that other elements may be included, rather than excluding other elements. In addition, unless otherwise clearly stated, all numbers and expressions related to the amounts of components, reaction conditions, etc. used herein should be understood to be modified by the term "about".

[0031] A structure for a quantum dot barrier rib may include a cured film formed of a photosensitive resin composition, the photosensitive resin composition including (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant. In this case, the photosensitive resin composition may optionally further include at least one selected from the group consisting of (E) a surfactant, (F) an additive, and (G) a solvent.

[0032] According to an embodiment, the structure for a quantum dot barrier rib has a total thickness of 6 μm or more and an optical density of 0.05 / μm to 2.0 / μm. The transmittance at 550 nm can be measured using an optical densitometer (361T manufactured by Xlite Corporation) to obtain the optical density (OD, unit: / μm) based on a thickness of 1 μm of the structure for a quantum dot barrier rib.

[0033] In addition, in the structure for a quantum dot barrier rib, the reflectance R measured by the SCI (including specular reflection component) method at a wavelength of 360 nm to 740 nm, or 550 nm SCI and the reflectance R measured by the SCE (excluding specular reflection component) method SCEThe following relationships can be satisfied respectively.

[0034] (Relationship 1) R SCI ≤5.0%

[0035] (Relationship 2) R SCE ≤0.5%

[0036] (Relationship 3) 2 ≤ R SCE / R SCI ≤10.

[0037] R SCI refers to the total reflectance, which includes specular reflection of light incident on the surface of an object and reflected at the same angle, and diffuse reflection that is scattered and reflected in various directions without specular reflection. R SCE only refers to diffuse reflection, that is, the total reflectance from which specular reflection is subtracted.

[0038] Hereinafter, each component of the photosensitive resin composition will be explained in detail.

[0039] As used herein, the term “(meth)acryloyl” refers to “acryloyl” and / or “methacryloyl”, and the term “(meth)acrylate” refers to “acrylate” and / or “methacrylate”.

[0040] The weight average molecular weight (grams / mole, Da) of each component described below is measured by gel permeation chromatography (GPC, eluent: tetrahydrofuran) with reference to polystyrene standards.

[0041] (A) Copolymer

[0042] The copolymer (A) used in the present invention may contain at least two structural units selected from the group consisting of: (a-1) a structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a combination thereof, (a-2) a structural unit derived from an ethylenically unsaturated compound containing an aromatic ring, (a-3) a structural unit derived from an ethylenically unsaturated compound containing an epoxy group, and (a-4) a structural unit derived from an ethylenically unsaturated compound different from (a-1), (a-2), and (a-3).

[0043] According to an embodiment, the copolymer (A) may contain the structural units (a-1) and (a-4).

[0044] According to another embodiment, the copolymer (A) may contain the structural units (a-1), (a-2), and (a-4).

[0045] According to another embodiment, the copolymer (A) may contain the structural units (a-1), (a-3), and (a-4).

[0046] According to another embodiment, the copolymer (A) may include structural units (a-1), (a-2), and (a-3).

[0047] According to another embodiment, the copolymer (A) may include structural units (a-1), (a-2), (a-3), and (a-4).

[0048] The copolymer (A) is an alkali-soluble resin for developability and can also serve as a substrate for forming a film during coating and a structure for forming a final pattern.

[0049] (a-1) Structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a combination thereof

[0050] The structural unit (a-1) is derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a combination thereof. Ethylenically unsaturated carboxylic acids and ethylenically unsaturated carboxylic anhydrides are polymerizable unsaturated monomers containing at least one carboxyl group in the molecule. Specific examples thereof may include unsaturated monocarboxylic acids such as (meth)acrylic acid, crotonic acid, α-chloroacrylic acid, and cinnamic acid; unsaturated dicarboxylic acids and their anhydrides such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, itaconic anhydride, citraconic acid, citraconic anhydride, and mesaconic acid; trivalent or higher-valent unsaturated polycarboxylic acids and their anhydrides; and mono[(meth)acryloyloxyalkyl] esters of divalent or higher-valent polycarboxylic acids such as mono[2-(meth)acryloyloxyethyl] succinate, mono[2-(meth)acryloyloxyethyl] phthalate, etc. The structural units derived from the above exemplary compounds may be included in the copolymer alone or in combination of two or more.

[0051] Based on the total moles of the structural units constituting the copolymer (A), the amount of the structural unit (a-1) may be 5 to 65 mol% or 10 to 50 mol%. Within the above range, it may have favorable developability.

[0052] (a-2) Structural unit derived from an ethylenically unsaturated compound containing an aromatic ring

[0053] The structural unit (a-2) is derived from an ethylenically unsaturated compound containing an aromatic ring. Specific examples of the ethylenically unsaturated compound containing an aromatic ring may include phenyl (meth)acrylate, benzyl (meth)acrylate, 2-phenoxyethyl (meth)acrylate, phenoxy diethylene glycol (meth)acrylate, p-nonylphenoxy polyethylene glycol (meth)acrylate, p-nonylphenoxy polypropylene glycol (meth)acrylate, tribromophenyl (meth)acrylate; styrene; styrenes having an alkyl substituent, such as methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, hexylstyrene, heptylstyrene, and octylstyrene; styrenes having a halogen, such as fluorostyrene, chlorostyrene, bromostyrene, and iodostyrene; styrenes having an alkoxy substituent, such as methoxystyrene, ethoxystyrene, and propoxystyrene; 4-hydroxystyrene, p-hydroxy-α-methylstyrene, acetylstyrene; and vinyltoluene, divinylbenzene, vinylphenol, o-vinylbenzyl methyl ether, m-vinylbenzyl methyl ether, p-vinylbenzyl methyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like. The structural units derived from the above exemplary compounds may be included in the copolymer alone or in combination of two or more. For the polymerizability of the composition, the structural unit derived from a styrene compound is preferred among these examples.

[0054] Based on the total moles of the structural units constituting the copolymer (A), the amount of the structural unit (a-2) may be 1 to 50 mol% or 3 to 40 mol%. Within the above range, it may be more advantageous in terms of chemical resistance.

[0055] (a-3) Structural unit derived from an ethylenically unsaturated compound containing an epoxy group

[0056] The structural unit (a-3) is derived from an ethylenically unsaturated compound containing an epoxy group. Specific examples of the ethylenically unsaturated compound containing an epoxy group may include glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 2,3-epoxycyclopentyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, α-ethylglycidyl acrylate, α-n-propylglycidyl acrylate, α-n-butylglycidyl acrylate, N-(4-(2,3-epoxypropoxy)-3,5-dimethylbenzyl)acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl)acrylamide, 4-hydroxybutyl (meth)acrylate glycidyl ether, 4-hydroxybutyl acrylate glycidyl ether, allyl glycidyl ether, 2-methylallyl glycidyl ether, and the like. The structural units derived from the above exemplary compounds may be included in the copolymer alone or in combination of two or more. From the perspective of copolymerizability and enhancement of the cured film strength, at least one of the structural units selected from glycidyl (meth)acrylate, 4-hydroxybutyl acrylate glycidyl ether, and 4-hydroxybutyl (meth)acrylate glycidyl ether derived from the above is more preferred.

[0057] Based on the total moles of the structural units constituting the copolymer (A), the amount of the structural unit (a-3) may be 1 to 40 mol%, or 5 to 20 mol%. Within the above range, it may be more advantageous in terms of residues during the process and the margin during pre-baking.

[0058] (a-4) Structural unit derived from an ethylenically unsaturated compound different from (a-1), (a-2), and (a-3)

[0059] The copolymer (A) used in the present invention may further contain structural units derived from ethylenically unsaturated compounds different from (a-1), (a-2), and (a-3) in addition to (a-1), (a-2), and (a-3).

[0060] Specific examples of structural units derived from ethylenically unsaturated compounds that are different from structural units (a-1), (a-2), and (a-3) may include unsaturated carboxylic acid esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, glycerol (meth)acrylate, methyl α-hydroxymethylacrylate, ethyl α-hydroxymethylacrylate, propyl α-hydroxymethylacrylate, butyl α-hydroxymethylacrylate, 2-methoxyethyl (meth)acrylate, 3-methoxybutyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, methoxytripropylene glycol (meth)acrylate, poly(ethylene glycol) methyl ether (meth)acrylate, trifluoroethyl (meth)acrylate, trifluoro(meth)acrylate, tetrafluoropropyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, octafluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyloxyethyl (meth)acrylate, and dicyclopentenyl-oxyethyl (meth)acrylate; tertiary amines containing N-vinyl such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylmorpholine; unsaturated ethers such as vinyl methyl ether and vinyl ethyl ether; unsaturated imides such as N-phenylmaleimide, N-(4-chlorophenyl)maleimide, N-(4-hydroxyphenyl)maleimide, N-cyclohexylmaleimide, etc. The structural units derived from the above exemplary compounds may be included in the copolymer alone or in combination of two or more.

[0061] In addition, according to the embodiment, structural unit (a-4) may include a fluorine-containing compound. For example, it may include at least one selected from trifluoroethyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, and octafluoropentyl (meth)acrylate.

[0062] Based on the total moles of the structural units constituting copolymer (A), the amount of structural unit (a-4) may be greater than 0 to 80 mol%, or 30 to 70 mol%. Within the above range, the storage stability of the photosensitive resin composition can be maintained, and the film retention rate can be more advantageously enhanced.

[0063] According to an embodiment, examples of the copolymer having structural units (a-1) to (a-4) may include a copolymer of (meth)acrylic acid / styrene / (meth)acrylic acid methyl ester / glycidyl (meth)acrylate, a copolymer of (meth)acrylic acid / styrene / (meth)acrylic acid methyl ester / glycidyl (meth)acrylate / N-phenylmaleimide, a copolymer of (meth)acrylic acid / styrene / (meth)acrylic acid methyl ester / glycidyl (meth)acrylate / N-cyclohexylmaleimide, a copolymer of (meth)acrylic acid / styrene / n-butyl (meth)acrylate / glycidyl (meth)acrylate / N-phenylmaleimide, a copolymer of (meth)acrylic acid / styrene / glycidyl (meth)acrylate / N-phenylmaleimide, a copolymer of (meth)acrylic acid / styrene / glycidyl 4-hydroxybutyl acrylate ether / N-phenylmaleimide, and the like. One, two, or more of the copolymers may be included in the photosensitive resin composition.

[0064] According to an embodiment, examples of the copolymer having structural units (a-1) to (a-4) may include a copolymer of (meth)acrylic acid / (meth)acrylic acid methyl ester / trifluoro(meth)acrylate / (meth)acrylic acid butyl ester, a copolymer of (meth)acrylic acid / (meth)acrylic acid methyl ester / trifluoroethyl (meth)acrylate / (meth)acrylic acid butyl ester, a copolymer of (meth)acrylic acid / (meth)acrylic acid methyl ester / hexafluoroisopropyl (meth)acrylate / (meth)acrylic acid butyl ester, and a copolymer of (meth)acrylic acid / (meth)acrylic acid methyl ester / octafluoropentyl (meth)acrylate / (meth)acrylic acid butyl ester.

[0065] The weight-average molecular weight of copolymer (A) may be 4,000 to 20,000 Da or 6,000 to 15,000 Da. If the weight-average molecular weight of copolymer (A) is within the above range, the step difference generated by the lower pattern can be advantageously improved, and the pattern profile at the time of development can be favorable.

[0066] Based on the total weight of the solid content of the photosensitive resin composition (i.e., excluding the weight of the solvent), the amount of copolymer (A) in the entire photosensitive resin composition may be 5 to 50% by weight, or 10 to 40% by weight. Within the above range, the pattern profile at the time of development can be favorable, and properties such as film retention rate and chemical resistance can be enhanced.

[0067] Copolymer (A) can be prepared by charging a radical polymerization initiator, a solvent, and at least two of the structural units (a-1), (a-2), (a-3), and (a-4) into a reactor, then charging nitrogen into it and slowly stirring the mixture to polymerize.

[0068] The free radical polymerization initiator can be an azo compound, such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile); or benzoyl peroxide, lauroyl peroxide, tert-butyl peroxyneodecanoate, 1,1-bis(tert-butylperoxy)cyclohexane, etc., but it is not limited thereto. The free radical polymerization initiator can be used alone or in combination of two or more kinds.

[0069] The solvent can be any conventional solvent commonly used in the preparation of the copolymer (A) and can include, for example, propylene glycol monomethyl ether acetate (PGMEA).

[0070] (B) Photopolymerizable compound

[0071] The photopolymerizable compound (B) used in the present invention can be a monofunctional or polyfunctional ester compound having at least one ethylenically unsaturated double bond. In particular, from the perspective of chemical resistance, it can be a polyfunctional compound having at least two functional groups.

[0072] The photopolymerizable compound (B) can be selected from the group consisting of dipentaerythritol hexaacrylate, di(tris(hydroxymethyl)propane) tetraacrylate, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, glycerol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, the monoester of pentaerythritol tri(meth)acrylate and succinic acid, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, the monoester of dipentaerythritol penta(meth)acrylate and succinic acid, pentaerythritol triacrylate-diisocyanate hexamethylene ester (the reaction product of pentaerythritol triacrylate and diisocyanate hexamethylene ester), tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, bisphenol A epoxy acrylate, ethylene glycol monomethyl ether acrylate, and mixtures thereof, but it is not limited thereto.

[0073] Examples of commercially available photopolymerizable compounds may include (i) monofunctional (meth)acrylates such as Aronix M-101, M-111, and M-114 manufactured by Toagosei Co., Ltd., KAYARAD T4-110S, T-1420, and T4-120S manufactured by Nippon Kayaku Co., Ltd., and V-158 and V-2311 manufactured by Osaka Yuki Kayaku Kogyo Co., Ltd.; (ii) difunctional (meth)acrylates such as Aronix M-210, M-240, and M-6200 manufactured by Toagosei Co., Ltd., KAYARAD HDDA, HX-220, and R-604 manufactured by Nippon Kayaku Co., Ltd., and V-260, V-312, and V-335HP manufactured by Osaka Yuki Kayaku Kogyo Co., Ltd.; and (iii) trifunctional and higher-functional (meth)acrylates such as Aronix M-309, M-400, M-403, M-405, M-450, M-7100, M-8030, M-8060, and TO-1382 manufactured by Toagosei Co., Ltd., KAYARAD TMPTA, DPHA, and DPHA-40H manufactured by Nippon Kayaku Co., Ltd., and V-295, V-300, V-360, V-GPT, V-3PA, V-400, and V-802 manufactured by Osaka Yuki Kayaku Kogyo Co., Ltd.

[0074] Based on 100 parts by weight of the copolymer (A) on a solid content (excluding solvents), the amount of the photopolymerizable compound (B) may be 10 to 200 parts by weight, 10 to 150 parts by weight, 15 to 100 parts by weight, or 15 to 90 parts by weight. If the amount of the photopolymerizable compound is within the above range, the pattern developability and coating characteristics may be excellent while the film retention rate remains constant. If the amount of the photopolymerizable compound is less than the above range, the development time becomes longer, which may affect the process and residues. If it exceeds the above range, it may cause a problem that the pattern resolution becomes too high.

[0075] (C) Photoinitiator

[0076] The photoinitiator (C) used in the present invention may be any known photoinitiator.

[0077] The photoinitiator (C) may be selected from the group consisting of: acetophenone-based compounds, non-imidazole-based compounds, triazine-based compounds, onium salt-based compounds, benzoin-based compounds, benzophenone-based compounds, polynuclear quinone-based compounds, thioxanthone-based compounds, diazo-based compounds, imide sulfonate-based compounds, oxime-based compounds, carbazole-based compounds, borate sulfonium-based compounds, ketone-based compounds, and mixtures thereof.

[0078] Specifically, an oxime-based compound, a triazine-based compound, or a combination thereof may be used as the photoinitiator (C). More specifically, a combination of an oxime-based compound and a triazine-based compound may be used.

[0079] Specific examples of the photoinitiator (C) may include 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauroyl peroxide, tert-butyl peroxyneopentanoate, 1,1-bis(tert-butylperoxy)cyclohexane, p-dimethylaminobenzophenone, 2-benzyl-2-(dimethylamino)-1-[4-(4-morpholinyl)phenyl]-1-butanone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzyl dimethyl ketal, benzophenone, benzoin propyl ether, diethyl thioxanthone, 2,4-bis(trichloromethyl)-6-p-methoxyphenyl-s-triazine, 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 9-phenylacridine, 3-methyl-5-amino-((s-triazin-2-yl)amino)-3-phenylcoumarin, 2-(o-chlorophenyl)-4,5-diphenylimidazolyl dimer, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-[4-(phenylthio)phenyl]-octane-1,2-dione-2-(o-benzoyl)oxime, o-benzoyl-4'-(benzothio)benzoyl-hexyl-ketoxime, 2,4,6-trimethylphenylcarbonyl-diphenylphosphine oxide, hexafluoro diphosphorus-trialkylphenyl sulfonium salt, 2-mercaptobenzimidazole, 2,2'-benzothiazolyl disulfide, 2-(4-styrylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-ylphenyl)-butan-1-one, and mixtures thereof, but it is not limited thereto.

[0080] For reference, examples of commercially available oxime-based photoinitiators include OXE-01 (BASF), OXE-02 (BASF), OXE-03 (BASF), N-1919 (ADEKA), NCI-930 (ADEKA), NCI-831 (ADEKA), and SPI-03 (Samyang). Examples of triazine-based photoinitiators include 2-[4-(2-phenylethenyl)phenyl]-4,6-bis(trichloromethyl)-1,3,5-triazine (Triazine Y, Tronly), etc.

[0081] The photoinitiator (C) can be used in an amount of 0.1 to 10 parts by weight, 0.1 to 8 parts by weight, 0.5 to 8 parts by weight, or 0.5 to 6 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent).

[0082] Specifically, an oxime-based compound in an amount of 0.05 to 4 parts by weight and / or a triazine-based compound in an amount of 0.05 to 2 parts by weight based on 100 parts by weight of the copolymer (A) can be used as the photoinitiator.

[0083] More specifically, an oxime-based compound in an amount of 0.05 to 3.5 parts by weight and / or a triazine-based compound in an amount of 0.05 to 1.5 parts by weight based on 100 parts by weight of the copolymer (A) can be used as the photoinitiator. If the oxime-based compound is used in an amount within the above range, the development and coating characteristics can be enhanced along with high sensitivity. In addition, if the triazine-based compound is used in an amount within the above range, a cured film with excellent chemical resistance and a cone angle after pattern formation along with high sensitivity can be obtained.

[0084] (D) Colorant

[0085] The photosensitive resin composition of the present invention may contain a colorant (D) to impart light-shielding properties thereto. The colorant (D) may contain a black colorant.

[0086] The black colorant may contain at least one selected from the group consisting of a black organic colorant and a black inorganic colorant. Specifically, the colorant (D) may contain a mixture of a black organic colorant and a black inorganic colorant. In addition, the colorant (D) may contain only a black organic colorant or only a black inorganic colorant.

[0087] In addition, the colorant (D) may contain a colorant other than the black colorant.

[0088] Specifically, the colorant (D) may include a black organic colorant and a colorant other than black pigments. Alternatively, the colorant (D) may include a black inorganic colorant and a colorant other than black pigments. Alternatively, the colorant (D) may include a black organic colorant, a black inorganic colorant, and a colorant other than black pigments. Preferably, the colorant (D) has high color development property and high heat resistance.

[0089] According to an embodiment, the colorant (D) may include a black inorganic colorant and a black organic colorant in a weight ratio of 1 to 50:50 to 99.

[0090] According to an embodiment, the colorant (D) may include a black organic colorant and a colorant other than black pigments in a weight ratio of 60 to 90:10 to 40.

[0091] According to an embodiment, the colorant (D) may include a black inorganic colorant and a colorant other than black pigments in a weight ratio of 1 to 40:60 to 99.

[0092] According to an embodiment, the colorant (D) may include a black inorganic colorant, a black organic colorant, and a colorant other than black pigments in a weight ratio of 1 to 50:30 to 80:5 to 40.

[0093] Specific examples of the black organic colorant may be at least one black organic colorant selected from the group consisting of aniline black, lactam black, and perylene black. Specifically, BK-7539 (TOKUSHIKI Co., Ltd.) containing organic black can be used. In this case, low reflectivity, high light-shielding characteristics, optical density, dielectric constant, etc. can be improved.

[0094] Specifically, the black organic colorant can reduce the band gap. The smaller the band gap, the lower the degree of light reflection. In addition, the black organic colorant can absorb all wavelength ranges in the visible range, which is beneficial for minimizing the reflectivity.

[0095] Any black inorganic colorant and any colorant other than black pigments known in the art can be used. For example, any compound classified as a pigment in the Color Index (published by the Society of Dyers and Colourists) and any dye known in the art can be used.

[0096] Specific examples of the black inorganic colorant may include carbon black, titanium black, metal oxides such as Cu-Fe-Mn-based oxides, and synthetic iron black, etc.

[0097] Based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent), the black organic colorant can be used in an amount of 20 to 100% by weight or 40 to 100% by weight. If the amount of the black organic colorant is within the above range, the pattern profile during development can be favorable, and properties such as film retention rate can be enhanced. However, if based on the total weight of the solid content of the colorant (D), the amount of the black organic colorant is less than 20% by weight, the desired optical density and low reflectivity in the present invention may not be obtained.

[0098] In addition, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the black organic colorant can be used in an amount of 3 to 40 parts by weight or 5 to 30 parts by weight. If the amount of the black organic colorant is within the above range, the pattern profile during development can be favorable, and properties such as film retention rate can be enhanced.

[0099] According to the examples, based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent), the black inorganic colorant can be used in an amount of 0 to 20% by weight or 0 to 10% by weight, particularly 0.01 to 20% by weight or 0.01 to 10% by weight. If the amount of the black inorganic colorant is excessive, the desired optical density and low reflectivity in the present invention may not be obtained.

[0100] In addition, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the black inorganic colorant can be used in an amount of 0.01 to 10 parts by weight or 0.02 to 5 parts by weight. If the amount of the black inorganic colorant is within the above range, the pattern profile during development can be favorable, and properties such as film retention rate can be enhanced.

[0101] Specific examples of colorants other than black pigments can include C.I. Pigment Violet 13, 14, 19, 23, 25, 27, 29, 32, 33, 36, 37, and 38; and C.I. Pigment Blue 15 (15:3, 15:4, 15:6, etc.), 16, 21, 28, 60, 64, and 76. Specifically, colorants other than black pigments can contain at least one colorant selected from the group consisting of blue colorants and purple colorants. From the perspective of reducing reflectivity, among them, C.I. Pigment Blue 15:6 and 60, or C.I. Pigment Violet 23 are preferred.

[0102] According to the examples, based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent), the blue colorant can be used in an amount of 0 to 50% by weight or 0 to 40% by weight, particularly 0.01 to 50% by weight or 0.01 to 40% by weight.

[0103] In addition, based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent), the purple colorant can be used in an amount of 0 to 50% by weight or 0 to 40% by weight, particularly 0.01 to 50% by weight or 0.01 to 40% by weight.

[0104] In addition, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the blue colorant can be used in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight.

[0105] Meanwhile, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the purple colorant can be used in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight.

[0106] If the amounts of the blue colorant and the purple colorant are within the above ranges, the pattern profile during development can be favorable, properties such as film retention rate and optical density can be enhanced, and the desired total reflectance can be achieved. However, if the amounts of the blue colorant and the purple colorant exceed their respective above ranges, the desired optical density and low reflectance in the present invention may not be obtained.

[0107] Based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the colorant (D) can be used in an amount of 1 to 40 parts by weight or 2 to 30 parts by weight. If the amount of the colorant (D) is within the above range, the pattern profile during development can be favorable, and properties such as film retention rate can be enhanced. If the amount of the colorant (D) exceeds the above range, the desired optical density and low reflectance in the present invention may not be obtained.

[0108] The colorant (D) used in the present invention can be used in a form mixed with a dispersant, a dispersion resin (or binder), a solvent, etc. to disperse the colorant in the photosensitive resin composition.

[0109] Examples of the dispersant can include any known dispersant for colorants. Specific examples thereof can include cationic surfactants, anionic surfactants, nonionic surfactants, zwitterionic surfactants, silicon-based surfactants, fluorine-based surfactants, etc. Commercially available dispersants can include Disperbyk-182, -183, -184, -185, -2000, -2150, -2155, -2163, and -2164 from BYK Co. They can be used alone or in combination of two or more of them. The dispersant can be added to the colorant in advance by surface-treating the colorant with it or added together with the colorant when preparing the photosensitive resin composition.

[0110] In addition, the colorant (D) can be mixed with a dispersion resin and then used in the preparation of the photosensitive resin composition. In this case, the dispersion resin used can be the copolymer (A), a known copolymer, or a mixture thereof.

[0111] That is, the colorant (D) can be in the form of a colored dispersion liquid.

[0112] The colored dispersion liquid can be prepared by simultaneously mixing the colorant (D), the dispersion resin, and the dispersant and then grinding them. Alternatively, it can be prepared by pre-mixing the colorant (D) and the dispersant as described above, and subsequently mixing them with the dispersion resin and grinding them. Here, grinding is performed until the average diameter of the raw materials of the colored dispersion liquid becomes 50 to 250 nm, 50 to 150 nm, or 50 to 110 nm. Within the above range, no multilayer structure is formed in the colored dispersion liquid, whereby a more uniform colored dispersion liquid can be obtained.

[0113] Based on the total weight of the solid content of the photosensitive resin composition, the colored dispersion liquid of the present invention can be used in an amount of 20 to 70% by weight or 30 to 60% by weight.

[0114] The structure for the quantum dot barrier rib obtained from the photosensitive resin composition containing the colorant (D) can be a multilayer cured film including two or more cured films and can have a total thickness of 6 μm or more. In addition, the structure for the quantum dot barrier rib can achieve an optical density of 0.05 / μm to 2.0 / μm. Additionally, at a wavelength of 360 nm to 740 nm or 550 nm, the reflectance R SCI measured by the SCI (including specular reflection component) method can be 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to 4.6%, and the reflectance R SCE measured by the SCE (excluding specular reflection component) method can be 0.5% or less, 0.4% or less, 0.1% to 0.5%, 0.1% to 0.4%, or 0.2% to 0.4%. In addition, the ratio between R SCI and R SCE (i.e., R SCE / R SCI ) can be 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8, or 4 to 7.5. Within the above range, the characteristics of low reflectance and high light-shielding properties can be satisfied, and light leakage of red, green, etc. can be prevented. If any of R SCI , R SCE , and R SCE / R SCI is not within the above range, the characteristics of low reflectance and high light-shielding properties may not be satisfied simultaneously.

[0115] (E) Surfactant

[0116] The photosensitive resin composition of the present invention may further contain a surfactant (E) in order to enhance coatability and to prevent the generation of defects.

[0117] Although the type of the surfactant (E) is not particularly limited, for example, a fluorine-based surfactant or a silicon-based surfactant can be used.

[0118] Commercially available silicon-based surfactants may include DC3PA, DC7PA, SH11PA, SH21PA, and SH8400 from Dow Corning Toray Silicone, TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, and TSF-4452 from GE Toshiba Silicone, BYK-333, BYK-307, BYK-3560, BYK UV-3535, BYK-361N, BYK-354, and BYK-399 from BYK, etc. They may be used alone or in combination of two or more thereof.

[0119] Commercially available fluorine-based surfactants may include Megaface F-470, F-471, F-475, F-482, F-489, and F-563 from Dainippon Ink Kagaku Kogyo Co. (DIC).

[0120] From the perspective of the coatability of the composition, among these surfactants, preferred may be BYK-333 and BYK-307 from BYK and F-563 from DIC.

[0121] Based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the surfactant (E) may be used in an amount of 0.01 to 5 parts by weight, 0.1 to 3 parts by weight, or 0.1 to 1 part by weight. If the amount of the surfactant is within the above range, the photosensitive resin composition can be smoothly coated.

[0122] (F) Additive

[0123] In addition, the photosensitive resin composition of the present invention may further contain at least one additive selected from the group consisting of an epoxy compound, a photo base generator, a thiol compound, and a compound derived from an epoxy resin, provided that the physical properties of the photosensitive resin composition are not adversely affected.

[0124] The epoxy compound may be an unsaturated monomer containing at least one epoxy group, or its homo-oligomer or hetero-oligomer. Examples of the unsaturated monomer containing at least one epoxy group may include glycidyl (meth)acrylate, glycidyl 4-hydroxybutyl acrylate ether, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 2,3-epoxycyclopentyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, α-ethyl glycidyl acrylate, α-n-propyl glycidyl acrylate, α-n-butyl glycidyl acrylate, N-(4-(2,3-epoxypropoxy)-3,5-dimethylbenzyl)acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl)acrylamide, allyl glycidyl ether, 2-methylallyl glycidyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, or a mixture thereof. Specifically, glycidyl (meth)acrylate can be used.

[0125] Examples of commercially available homo-oligomers of the unsaturated monomer containing at least one epoxy group may include MIPHOTOGHP-03HHP (glycidyl (meth)acrylate, Miwon Commercial Co., Ltd.).

[0126] The epoxy compound may further contain the following structural units.

[0127] Specific examples include structural units derived from the following: styrene; styrenes having an alkyl substituent, such as methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, hexylstyrene, heptylstyrene, and octylstyrene; styrenes having a halogen, such as fluorostyrene, chlorostyrene, bromostyrene, and iodostyrene; styrenes having an alkoxy substituent, such as methoxystyrene, ethoxystyrene, and propoxystyrene; p-hydroxy-α-methylstyrene, acetylstyrene; ethylenically unsaturated compounds having an aromatic ring, such as divinylbenzene, vinylphenol, o-vinylbenzyl methyl ether, m-vinylbenzyl methyl ether, p-vinylbenzyl methyl ether; unsaturated carboxylic acid esters, such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, glycerol (meth)acrylate, methyl α-hydroxymethylacrylate, ethyl α-hydroxymethylacrylate, propyl α-hydroxymethylacrylate, butyl α-hydroxymethylacrylate, 2-methoxyethyl (meth)acrylate, 3-methoxybutyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, methoxytripropylene glycol (meth)acrylate, poly(ethylene glycol) methyl ether (meth)acrylate, phenyl (meth)acrylate, benzyl (meth)acrylate, 2-phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, p-nonylphenoxypolyethylene glycol (meth)acrylate, p-nonylphenoxypolypropylene glycol (meth)acrylate, tetrafluoropropyl (meth)acrylate, 1,1,1,3,3,3-hexafluoroisopropyl (meth)acrylate, octafluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, tribromophenyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyloxyethyl (meth)acrylate, and dicyclopentenyl oxyethyl (meth)acrylate; tertiary amines having N-vinyl, such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylmorpholine; unsaturated ethers, such as vinyl methyl ether and vinyl ethyl ether; unsaturated imides, such as N-phenylmaleimide, N-(4-chlorophenyl)maleimide, N-(4-hydroxyphenyl)maleimide, N-cyclohexylmaleimide, etc. The structural units derived from the above exemplary compounds may be included in the epoxy compound alone or in combination of two or more thereof.

[0128] The epoxy compound may have a weight-average molecular weight of 100 to 30,000 Da. Specifically, the epoxy compound may have a weight-average molecular weight of 100 to 10,000 Da. If the weight-average molecular weight of the epoxy compound is 100 Da or greater, the hardness of the cured film can be more excellent. If it is 30,000 Da or less, the thickness of the cured film becomes uniform (has a smaller step difference), and it is more suitable for planarization.

[0129] Based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent), the epoxy compound can be used in an amount of 0 to 3 parts by weight, 0.01 to 3 parts by weight, or 0.1 to 1 part by weight. Within the above ranges, the pattern profile during development can be favorable, and chemical resistance and planarization can be enhanced.

[0130] In addition, the photo-base generator may contain a compound having the property of generating a base upon irradiation with light (or actinic rays). For example, it may contain a highly sensitive compound having a photosensitive range even at a wavelength of 300 nm or greater.

[0131] The photo-base generator may contain a crosslinkable compound containing a polyamine photo-base generator component. Since the present invention includes such a photo-base generator, it can be cured and form a fine pattern at a low temperature and / or during a short period of time when preparing the cured film. In addition, since the photo-base generator generates a base upon irradiation with light (e.g., UV), it is not inhibited by oxygen in the air, making it available for preventing corrosion or deterioration of the cured film.

[0132] When the photo-base generator is exposed to light, the side photo-base groups of the polyamine photo-base generator component break or photodecompose to provide amino groups. The amino groups can react with the amine-reactive groups of the polyfunctional amine-reactive component to crosslink the (meth)acrylate copolymer component.

[0133] According to the examples, applicable photo-base generators include WPBG-018 (Wako Pure Chemical Industries, Ltd., CAS No. 122831-05-7, 9-anthrylmethyl-N,N-diethylcarbamate), WPBG-027 (CAS No. 1203424-93-4, (E)-1-piperidinyl-3-(2-hydroxyphenyl)-2-propen-1-one), WPBG-266 (CAS No. 1632211-89-2, 1,2-diisopropyl-3-bis(dimethylamino)methylene)guanidinium 2-(3-benzoylphenyl)propionate), WPBG-300 (CAS No. 1801263-71-7, 1,2-dicyclohexyl-4,4,5,5-tetramethyldiguanidinium n-butyltriphenylborate), etc. The photo-base generators can be used alone or in combination of two or more of them.

[0134] Based on 100 parts by weight of the copolymer (A) based on the solid content (excluding solvents), the photo-base generator can be used in an amount of 0 to 10 parts by weight, particularly 0 to 6 parts by weight, more particularly 0.01 to 5 parts by weight. Within the above ranges, the pattern profile during development can be favorable and the chemical resistance can be excellent.

[0135] The thiol-based compound can be used as an additive for free radical or catalytic functions. It can increase the photo-curing conversion rate by UV irradiation or thermal reaction, and it can increase the epoxy conversion rate by reducing the reaction energy via thermal reaction. The thiol-based compound prevents free radicals from being quenched by oxygen. It also produces the effect of making the structure denser by increasing the crosslinking degree via crosslinking with the photo-polymerizable compound (B), thereby improving the degree of curing even at low temperatures.

[0136] Examples of the thiol-based compound include compounds having two or more mercapto groups in the molecule. For example, it can be an aliphatic thiol compound or an aromatic thiol compound.

[0137] Examples of aliphatic thiol compounds may include methanedithiol, 1,2-ethanedithiol, 1,2-propanedithiol, 1,3-propanedithiol, 1,4-butanedithiol, 1,5-pentanedithiol, 1,6-hexanedithiol, 1,2-cyclohexanedithiol, 3,4-dimethoxybutane-1,2-dithiol, 2-methylcyclohexane-2,3-dithiol, 1,2-dimercaptopropyl methyl ether, 2,3-dimercaptopropyl methyl ether, bis(2-mercaptoethyl) ether, tetra(mercaptomethyl)methane, bis(mercaptomethyl) sulfide, bis(mercaptomethyl) disulfide, bis(mercaptoethyl) sulfide, bis(mercaptoethyl) disulfide, bis(mercaptomethylthio)methane, bis(2-mercaptoethylthio)methane, 1,2-bis(mercaptomethylthio)ethane, 1,2-bis(2-mercaptoethylthio)ethane, 1,3-bis(mercaptomethylthio)propane, 1,3-bis(2-mercaptoethylthio)propane, 1,2,3-tris(mercaptomethylthio)propane, 1,2,3-tris(2-mercaptoethylthio)propane, 1,2,3-tris(3-mercaptopropylthio)propane, 4-mercaptomethyl-1,8-dimercapto-3,6-dithiaoctane, 5,7-dimercaptomethyl-1,11-dimercapto-3,6,9-trithioundecane, 4,7-dimercaptomethyl-1,11-dimercapto-3,6,9-trithioundecane, 4,8-dimercaptomethyl-1,11-dimercapto-3,6,9-trithioundecane, 1,1,3,3-tetra(mercaptomethylthio)propane, 4,6-bis(mercaptomethylthio)-1,3-dithiacyclopentane, 2-(2,2-bis(mercaptomethylthio)ethyl)-1,3-dithioethane, tetra(mercaptomethylthiomethyl)methane, tetra(2-mercaptoethylthiomethyl)methane, bis(2,3-dimercaptopropyl) sulfide, 2,5-bis(mercaptomethyl)-1,4-dithiacyclopentane, ethylene glycol bis(2-mercaptoacetate), ethylene glycol bis(3-mercaptopropionate), diethylene glycol bis(2-mercaptoacetate), diethylene glycol bis(3-mercaptopropionate), 2,3-dimercapto-1-propanol (3-mercaptopropionate), 3-mercapto-1,2-propanediol bis(2-mercaptoacetate), 3-mercapto-1,2-propanediol bis(3-mercaptopropionate), trimethylolpropane tris(2-mercaptoacetate), bis(trimethylolpropane) tetrakis(2-mercaptoacetate), trimethylolpropane tris(3-mercaptopropionate), bis(trimethylolpropane) tetrakis(3-mercaptopropionate), trimethylolethane tris(2-mercaptoacetate), trimethylolethane tris(3-mercaptopropionate), pentaerythritol tetrakis(2-mercaptoacetate), dipentaerythritol hexakis(2-mercaptoacetate), pentaerythritol bis(3-mercaptopropionate), pentaerythritol tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptopropionate) (PETMP), dipentaerythritol hexakis(3-mercaptopropionate), glycerol bis(2-mercaptoacetate), glycerol tris(2-mercaptoacetate), glycerol bis(3-mercaptopropionate), glycerol tris(3-mercaptopropionate), 1,4-cyclohexanediol bis(2-mercaptoacetate), 1,4-cyclohexanediol bis(3-mercaptopropionate), hydroxymethyl sulfide bis(2-mercaptoacetate), hydroxymethyl sulfide bis(3-mercaptopropionate), hydroxyethyl sulfide (2-mercaptoacetate), hydroxyethyl sulfide (3-mercaptopropionate), hydroxymethyl disulfide (2-mercaptoacetate), hydroxymethyl disulfide (3-mercaptopropionate), thioglycolic acid bis(2-mercaptoethyl ester), thiodipropionic acid bis(2-mercaptoethyl ester), and N,N',N"-tris(β-mercaptopropylcarbonyloxyethyl) isocyanurate.,

[0138] Examples of aromatic thiol compounds may include 1,2-benzenedithiol, 1,3-benzenedithiol, 1,4-benzenedithiol, 1,2-bis(mercaptomethyl)benzene, 1,4-bis(mercaptomethyl)benzene, 1,2-bis(mercaptoethyl)benzene, 1,4-bis(mercaptoethyl)benzene, 1,2,3-benzenetrithiol, 1,2,4-benzenetrithiol, 1,3,5-benzenetrithiol, 1,2,3-tris(mercaptomethyl)benzene, 1,2,4-tris(mercaptomethyl)benzene, 1,3,5-tris(mercaptomethyl)benzene, 1,2,3-tris(mercaptoethyl)benzene, 1,3,5-tris(mercaptoethyl)benzene, 1,2,4-tris(mercaptoethyl)benzene, 2,5-toluenedithiol, 3,4-toluenedithiol, 1,4-naphthalenedithiol, 1,5-naphthalenedithiol, 2,6-naphthalenedithiol, 2,7-naphthalenedithiol, 1,2,3,4-benzenetetrathiol, 1,2,3,5-benzenetetrathiol, 1,2,4,5-benzenetetrathiol, 1,2,3,4-tetrakis(mercaptomethyl)benzene, 1,2,3,5-tetrakis(mercaptomethyl)benzene, 1,2,4,5-tetrakis(mercaptomethyl)benzene, 1,2,3,4-tetrakis(mercaptoethyl)benzene, 1,2,3,5-tetrakis(mercaptoethyl)benzene, 1,2,4,5-tetrakis(mercaptoethyl)benzene, 2,2'-dithiobiphenyl, and 4,4'-dithiobiphenyl.

[0139] The thiol-based compound can be an aliphatic thiol compound. Specifically, it can include pentaerythritol tetra(3-mercaptopropionate) (PETMP), SIRIUS-501 (SUBARU-501, Osaka Yukikagaku Kogyo Co., Ltd.), and glycoluril derivatives (TS-G, SHIKOKU CHEMICALS CORPORATION).

[0140] Based on 100 parts by weight of the copolymer (A) on a solid content (excluding solvents), the thiol-based compound can be used in an amount of 0 to 10 parts by weight, 0 to 6 parts by weight, or 0.01 to 5 parts by weight. If the amount of the thiol-based compound is within the above range, the pattern profile during development can be favorable, and the chemical resistance can be excellent.

[0141] The photosensitive resin composition of the present invention may further contain a compound derived from an epoxy resin. The compound derived from an epoxy resin has at least one double bond, may have a cardo backbone structure, may be a novolak-based resin, or may be an acrylic resin containing a double bond in its side chain.

[0142] When determined by gel permeation chromatography (referring to polystyrene), the weight average molecular weight (Mw) of the compound derived from an epoxy resin can be in the range of 3,000 to 18,000 Da or 5,000 to 10,000 Da. If the molecular weight of the compound derived from an epoxy resin is within the above range, the pattern profile during development can be favorable, and properties such as chemical resistance and elastic resilience can be improved.

[0143] Specifically, the compound derived from an epoxy resin can be a compound having a cardo backbone structure represented by the following formula 1:

[0144] [Formula 1]

[0145]

[0146] In the above formula 1,

[0147] X are each independently L 1 are each independently C 1-10 alkylene, C 3-20 cycloalkylene, or C 1-10 alkyleneoxy; R 1 to R 7 are each independently H, C 1-10 alkyl, C 1-10 alkoxy, C 2-10 alkenyl, or C 6-14 aryl; R8 is H, methyl, ethyl, CH 3 CHCl-, CH 3 CHOH-, CH 2 =CHCH 2 -, or phenyl; and n is an integer from 0 to 10.

[0148] C 1-10 Specific examples of the alkylene group may include methylene, ethylene, propylene, isopropylidene, butylene, isobutylene, sec-butylene, tert-butylene, pentylene, isopentylene, tert-pentylene, hexylene, heptylene, octylene, isooctylene, tert-octylene, 2-ethylhexylene, nonylene, isononylene, decylene, isodecylene, etc. C 3-20 Specific examples of the cycloalkylene group may include cyclopropylene, cyclobutylene, cyclopentylene, cyclohexylene, cycloheptylene, decalinylene, adamantylene, etc. C 1-10 Specific examples of the alkyleneoxy group may include methyleneoxy, ethyleneoxy, propyleneoxy, butyleneoxy, sec-butyleneoxy, tert-butyleneoxy, pentyleneoxy, hexyleneoxy, heptyleneoxy, octyleneoxy, 2-ethyl-hexyleneoxy, etc. C 1-10 Specific examples of the alkyl group may include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, tert-pentyl, hexyl, heptyl, octyl, isooctyl, tert-octyl, 2-ethylhexyl, nonyl, isononyl, decyl, isodecyl, etc. C 1-10 Specific examples of the alkoxy group may include methoxy, ethoxy, propoxy, butoxy, sec-butoxy, tert-butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, 2-ethylhexyloxy, etc. C 2-10 Specific examples of the alkenyl group may include vinyl, allyl, butenyl, propenyl, etc. C 6-14 Specific examples of the aryl group may include phenyl, tolyl, xylyl, naphthyl, etc.

[0149] For example, a compound derived from an epoxy resin having a kink skeleton structure can be prepared through the following synthetic route represented by Reaction Scheme 1.

[0150] [Reaction Scheme 1]

[0151]

[0152] In the above Reaction Scheme 1,

[0153] Hal is a halogen; and X, R 1 , R 2 and L 1 are the same as those defined in Formula 1 above.

[0154] The epoxy resin-derived compound having a kinked backbone structure can be obtained by reacting an epoxy resin having a kinked backbone structure with an unsaturated monocarboxylic acid to produce an epoxy adduct and then reacting the thus obtained epoxy adduct with a polycarboxylic anhydride, or further reacting the thus obtained product with a monofunctional or polyfunctional epoxy compound. Any unsaturated monocarboxylic acid known in the art can be used, such as acrylic acid, methacrylic acid, crotonic acid, cinnamic acid, sorbic acid, etc. Any polycarboxylic anhydride known in the art can be used, such as succinic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, hexahydrophthalic anhydride, etc. Any monofunctional or polyfunctional epoxy compound known in the art can be used, such as glycidyl methacrylate, methyl glycidyl ether, ethyl glycidyl ether, propyl glycidyl ether, isopropyl glycidyl ether, butyl glycidyl ether, isobutyl glycidyl ether, glycidyl ether of bisphenol Z, etc.

[0155] For example, the epoxy resin-derived compound having a kinked backbone structure can be prepared by the following synthetic route represented by Reaction Scheme 2.

[0156] [Reaction Scheme 2]

[0157]

[0158] In the above Reaction Scheme 2,

[0159] R 9 are each independently H, C 1-10 alkyl, C 1-10 alkoxy, C 2-10 alkenyl, or C 6-14 aryl; R 10 and R 11 are each independently a saturated or unsaturated C 6 aliphatic or aromatic ring; n is an integer from 1 to 10; and X, R 1 , R 2 and L 1 are the same as defined in Formula 1 above.

[0160] In the case of using the epoxy resin-derived compound having a kinked backbone structure, the kinked backbone structure can improve the adhesion of the cured material to the substrate, alkali resistance, processability, strength, etc. In addition, once the uncured portion is removed during development, a high-resolution image can be formed in the pattern.

[0161] Based on 100 parts by weight of the copolymer (A) based on the solid content (excluding solvents), the compound derived from an epoxy resin can be used in an amount of 0 to 50 parts by weight, particularly 0 to 40 parts by weight, more particularly 0.01 to 50 parts by weight, 0.01 to 40 parts by weight, or 0.01 to 30 parts by weight. If the compound derived from an epoxy resin is used within the above amount ranges, the developability and pattern profile during development can be advantageous.

[0162] (G) Solvent

[0163] The photosensitive resin composition of the present invention can be prepared as a liquid composition (wherein the above components are mixed with a solvent). Any solvent known in the art that is compatible but does not react with the components in the photosensitive resin composition can be used as the solvent (G) for preparing the photosensitive resin composition.

[0164] Examples of the solvent (G) can include glycol ethers such as ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as ethyl cellosolve acetate; esters such as ethyl 2-hydroxypropionate; diethylene glycols such as diethylene glycol monomethyl ether; propylene glycol alkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol propyl ether acetate; and alkoxyalkyl acetates such as 3-methoxybutyl acetate. The solvent (G) can be used alone or in combination of two or more.

[0165] The amount of the solvent (G) is not particularly limited, but from the perspective of the coatability and stability of the finally obtained photosensitive resin composition, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding solvents), it can be 50 to 200 parts by weight or 80 to 150 parts by weight. If the amount of the solvent is within the above range, the resin composition is smoothly coated, and the delay margin that may occur during the working process is small.

[0166] In addition, the photosensitive resin composition of the present invention can further contain other additives such as antioxidants and stabilizers, as long as they do not have an adverse effect on the physical properties of the photosensitive resin composition.

[0167] The photosensitive resin composition containing the above components can be prepared as a liquid composition by a conventional method. For example, a colorant is premixed with a dispersion resin, a dispersant, and a solvent and dispersed therein using a bead mill until the average particle size of the colorant reaches a desired value, thereby preparing a color dispersion. In this case, a surfactant and / or a copolymer can be partially or completely blended. Added to the dispersion are the remaining parts of the copolymer and the surfactant, the photopolymerizable compound, and the photoinitiator. Additives such as an epoxy compound or an additional solvent (if necessary) are further blended to a certain concentration, and then they are sufficiently stirred to prepare a liquid photosensitive resin composition.

[0168] The present invention can provide a structure for a quantum dot blocking rib in the form of a cured film by coating such a photosensitive resin composition on a substrate and curing it. The structure for the quantum dot blocking rib may include a multilayer cured film of two or more layers.

[0169] Specifically, the present invention can provide a structure for a quantum dot blocking rib, the structure including a first cured film formed from a first photosensitive resin composition and a second cured film formed from a second photosensitive resin composition on the first cured film,

[0170] wherein the first photosensitive resin composition, the second photosensitive resin composition, or both include (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant, and the structure has a total thickness of 6 μm or more.

[0171] The first photosensitive resin composition and the second photosensitive resin composition may be the same or different.

[0172] In addition, according to an embodiment, the first photosensitive resin composition and the second photosensitive resin composition may or may not contain fluorine.

[0173] For example, the first photosensitive resin composition may not contain fluorine, and the second photosensitive resin composition may contain fluorine.

[0174] In addition, both the first photosensitive resin composition and the second photosensitive resin composition may not contain fluorine.

[0175] If the first photosensitive resin composition or the second photosensitive resin composition contains fluorine, then when preparing the copolymer (A) to be used in the photosensitive resin composition, the structural unit (a-4) may include a fluorine-containing compound. For example, the structural unit (a-4) may include at least one selected from the group consisting of trifluoroethyl (meth)acrylate, tetrafluoropropyl (meth)acrylate, pentafluorobenzyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, heptadecafluoro-1-nonyl (meth)acrylate, octafluoropentyl (meth)acrylate, 4-trifluoromethyl-4-hydroxy-5,5,5-trifluoro-2-pentyl (meth)acrylate, and trimethoxysilylpropyl methacrylate.

[0176] Meanwhile, the structure for a quantum dot blocking rib according to an embodiment may be a multilayer cured film composed of two layers including a first cured film and a second cured film.

[0177] Specifically, the multilayer cured film may be a two-layer cured film, which includes a first cured film formed by coating a first photosensitive resin composition on a substrate and curing it; and a second cured film formed by coating a second photosensitive resin composition on the first cured film and curing it.

[0178] In the multilayer cured film composed of two layers, the first cured film and the second cured film may each have a thickness of 10 μm or less, particularly 4 μm to 9 μm, more particularly 5 μm to 9 μm. In addition, the multilayer cured film composed of two layers may have a total thickness of 6 μm to 20 μm, particularly 6 μm to 18 μm, more particularly 10 μm to 18 μm, that is, the total thickness of the first cured film and the second cured film.

[0179] The structure for a quantum dot barrier rib according to another embodiment may be a multilayer cured film composed of three layers including a first cured film, a second cured film, and a third cured film.

[0180] In the multilayer cured film composed of three layers, the first cured film, the second cured film, and the third cured film may each have a thickness of 8 μm or less, particularly 2 μm to 8 μm, more particularly 3 μm to 8 μm. In addition, the multilayer cured film composed of three layers may have a total thickness of 6 μm to 24 μm, particularly 9 μm to 24 μm, more particularly 12 μm to 24 μm, that is, the total thickness of the first cured film, the second cured film, and the third cured film.

[0181] The structure for a quantum dot barrier rib according to another embodiment may be a multilayer cured film composed of n layers including a first cured film, a second cured film, and an nth cured film. Here, n may be 4 or greater, particularly 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

[0182] In the multilayer cured film composed of n layers, the first cured film, the second cured film, and the nth cured film may each have a thickness of 8 μm or less, particularly 1.5 μm to 8 μm, more particularly 2 μm to 8 μm. In addition, the multilayer cured film composed of n layers may have a total thickness of 6 μm to 80 μm, particularly 6 μm to 40 μm, more particularly 6 μm to 30 μm.

[0183] The structure for a quantum dot barrier rib according to the embodiment has a large total film thickness as described above, so that excellent optical density (i.e., high light-shielding characteristics) and low reflectivity can be achieved even when the amount of the colorant is less than that in the prior art.

[0184] In a structure for a quantum dot barrier rib, the thickness and optical density of each cured film of the multilayer cured film may be the same or different. For example, the thickness of the first cured film may be the same as or different from the thickness of the second cured film. In addition, the optical density of the first cured film may be the same as or different from the optical density of the second cured film.

[0185] The height difference of the cured film is measured by the vertical movement of the device probe tip using SCAN PLUS, which is an α-step instrument (α-step profiler). The thickness of the cured film is obtained from the result. The thickness of the multilayer cured film is the initial film thickness. It may refer to the thickness at the time of forming the multilayer cured film, that is, the thickness of the film prepared during pre-baking before the exposure and development steps in the preparation of the quantum dot barrier rib.

[0186] In the case of obtaining a single-layer cured film from a photosensitive resin composition, there is a problem that the cured film is only applied in the form of a thin film. In addition, when the single-layer cured film is used for the quantum dot barrier rib, its thickness is thin. Therefore, when the quantum dot solution is dropped, it may overflow the barrier rib. If it overflows the barrier rib, stains may be generated due to color mixing, or the reliability may decrease. In addition, if the composition is coated thickly in a single layer and then cured, it is difficult to obtain a uniform cured film, stains may be generated due to thickness variations, or the quantum dot solution may overflow the barrier rib with a thin thickness. There are certain limitations for use in quantum dot barrier ribs.

[0187] However, the multilayer cured film (or the structure for a quantum dot barrier rib) according to the embodiment has a minimum film thickness of 6 μm. In addition, since a colorant is applied, when emitting various colors of light from the quantum dots, it has the advantage of blocking light through the barrier rib. In addition, by adjusting the number and thickness of the layers of each cured film, a multilayer pattern with a uniform film thickness can be formed. If a fluorine-containing cured film is applied to the final nth layer, when filling the quantum dot solution in an inkjet method, the discharged quantum dot solution can be prevented from overflowing into adjacent areas.

[0188] The present invention can prepare a structure for a quantum dot barrier rib in the form of a multilayer cured film by the following method. When forming a structure for a quantum dot barrier rib, a multilayer pattern with a uniform film thickness suitable for the quantum dot barrier rib can be formed in a single developing process.

[0189] Specifically, a method for preparing a structure for a quantum dot barrier rib includes coating a first photosensitive resin composition on a substrate and curing it to form a first cured film (S1); coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film (S2); and exposing and developing the multilayer cured film including the first cured film and the second cured film to form a pattern and then curing it (S3).

[0190] Wherein the first photosensitive resin composition, the second photosensitive resin composition, or both may include (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant.

[0191] More specifically, the method for preparing a structure for quantum dot barrier ribs according to an embodiment may include coating a first photosensitive resin composition on a substrate and curing it to form a first cured film (S1).

[0192] In the step of forming the first cured film, the photosensitive resin composition according to the present invention is coated on a pretreated substrate by a spin coating method, a slit coating method, a roll coating method, a screen printing method, a doctor blade method, etc. to a desired thickness (e.g., 4 μm to 8 μm), and it is cured by removing a solvent therefrom to form the first cured film.

[0193] Various inorganic substrates such as a glass substrate, an ITO-deposited substrate, a SiN x -deposited substrate, and a SiON x -deposited substrate may be used as the substrate. Any material may be used for the substrate as long as it can be used to form a structure for quantum dot barrier ribs.

[0194] The curing for forming the first cured film may be performed at 70°C to 140°C for 100 seconds to 800 seconds. The curing may be performed once or divided into two or more times.

[0195] When the curing is performed once, it may be performed at 70°C to 140°C for 100 seconds to 800 seconds, particularly at 80°C to 130°C for 150 seconds to 600 seconds, particularly at 90°C to 130°C for 150 seconds to 500 seconds.

[0196] When the curing is performed in two or more times, for example, it may be performed as a pre-bake at 70°C to 100°C for 50 seconds to 400 seconds, particularly at 70°C to 90°C for 100 seconds to 300 seconds, and then as an intermediate bake at 80°C to 140°C for 100 seconds to 500 seconds, particularly at 90°C to 130°C for 100 seconds to 300 seconds.

[0197] The method for preparing a structure for quantum dot barrier ribs according to an embodiment may include coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film (S2).

[0198] In the step of forming the second cured film, the second photosensitive resin composition is coated on the first cured film obtained in the above step S1 with a desired thickness (e.g., 4 μm to 8 μm), and is cured by removing the solvent therefrom to form the second cured film.

[0199] The curing for forming the second cured film can be carried out at 70°C to 140°C for 100 seconds to 800 seconds. The curing can be carried out once or divided into two or more times.

[0200] Specifically, when the curing is carried out once, it can be carried out at 70°C to 140°C for 100 seconds to 800 seconds, particularly at 80°C to 130°C for 150 seconds to 600 seconds, and more particularly at 90°C to 130°C for 150 seconds to 500 seconds.

[0201] When the curing is carried out in two or more times, for example, it can be carried out as a pre-bake at 70°C to 100°C for 50 seconds to 400 seconds, particularly at 70°C to 90°C for 100 seconds to 300 seconds, and then as an intermediate bake at 80°C to 140°C for 100 seconds to 500 seconds, particularly at 90°C to 130°C for 100 seconds to 300 seconds.

[0202] The curing conditions for the first cured film and the second cured film can be the same or different.

[0203] In the method for preparing a structure for quantum dot barrier ribs according to an embodiment, a multi-layer cured film composed of two layers can be exposed and developed. In the case of preparing a cured film having three or more layers, a cured film having one or more layers can be further formed on the second cured film, and then exposed and developed. In this case, the photosensitive resin composition for preparing the one or more cured films formed on the second cured film can be the same as or different from the photosensitive resin composition for preparing the first cured film and the second cured film. In addition, the optical density of each cured film can vary with the components and contents of the photosensitive resin composition for preparing the first cured film and the second cured film.

[0204] The method for preparing a structure for quantum dot barrier ribs according to an embodiment can include exposing and developing a multi-layer cured film including the first cured film and the second cured film to form a pattern and then curing it (S3).

[0205] In step S3, in order to form a pattern on the thus obtained multi-layer cured film, a mask having a predetermined shape is placed thereon, and then the mask is irradiated with activation rays of 200 nm to 500 nm. A low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a metal halide lamp, an argon laser, etc. can be used as the light source for irradiation. If necessary, X-rays, electron rays, etc. can also be used. The exposure dose can vary depending on the type and composition ratio of the components of the composition and the thickness of the dried coating. If a high-pressure mercury lamp is used, it can be 500 mJ / cm 2 or less (at a wavelength of 365 nm).

[0206] After the exposure step, an alkaline aqueous solution such as sodium carbonate, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, etc. is used as a developer to dissolve and remove the unnecessary parts, so that only the exposed parts remain to form a pattern. The image pattern obtained by development is cooled to room temperature and post-baked in a hot air circulation type drying oven to obtain the final pattern.

[0207] Exposure can be performed by setting the mask so that the interval between each pattern is 10 μm to 30 μm and irradiating activation rays thereon.

[0208] Development can be carried out for 50 seconds to 300 seconds, especially 100 seconds to 300 seconds.

[0209] The curing after pattern formation, i.e., post-baking, is carried out at 150 °C to 300 °C for 10 minutes to 60 minutes, especially at 180 °C to 280 °C for 20 minutes to 50 minutes, and more especially at 200 °C to 260 °C for 20 minutes to 40 minutes.

[0210] According to the method for preparing quantum dot barrier ribs according to the embodiment, a multi-layer pattern with a uniform film thickness suitable for quantum dot barrier ribs can be formed in a single development process.

[0211] The present invention provides a structure for quantum dot barrier ribs prepared by the method for preparing quantum dot barrier ribs according to the above embodiment.

[0212] In the structure for quantum dot barrier ribs according to the embodiment, patterns are formed at regular intervals, as Figures 2 to 4 shown. It can be composed of a multi-layer having two or more layers.

[0213] The structure (200) for quantum dot barrier ribs according to the embodiment can be a multi-layer structure (200) for quantum dot barrier ribs composed of two layers including a first cured film (211) and a second cured film (212) formed on a substrate (210), as Figure 2 shown.

[0214] Specifically, the structure (200) for the quantum dot barrier ribs can be a two-layer structure (200) for the quantum dot barrier ribs, which is prepared by exposing and developing two cured films to form a pattern and then baking them afterwards, where the two cured films include a first cured film (211) formed by coating a first photosensitive resin composition on a substrate (210) and curing it; and a second cured film (212) formed by coating a second photosensitive resin composition on the first cured film (211) and curing it.

[0215] According to another embodiment, the structure (300) for the quantum dot barrier ribs can be a multi-layer structure (300) for the quantum dot barrier ribs composed of three layers including a first cured film (311), a second cured film (312), and a third cured film (313), as Figure 3 shown.

[0216] Specifically, the structure (300) for the quantum dot barrier ribs can be a three-layer structure (300) for the quantum dot barrier ribs, which is prepared by exposing and developing three cured films to form a pattern and then baking them afterwards, where the three cured films include a first cured film (311) formed by coating a first photosensitive resin composition on a substrate (310) and curing it; a second cured film (312) formed by coating a second photosensitive resin composition on the first cured film (311) and curing it; and a third cured film (313) formed by coating a third photosensitive resin composition on the second cured film (312) and curing it.

[0217] According to another embodiment, the structure (400) for the quantum dot barrier ribs can be a multi-layer structure (400) for the quantum dot barrier ribs composed of n layers including a first cured film (411), a second cured film (412), a third cured film (413), and an nth cured film (nn), as Figure 4 shown.

[0218] Specifically, the structure (400) for the quantum dot barrier ribs can be an n-layer structure (400) for the quantum dot barrier ribs, which is prepared by exposing and developing an n-layer cured film to form a pattern and then baking it. The n-layer cured film includes a first cured film (411) formed by coating and curing a first photosensitive resin composition on a substrate (410); a second cured film (412) formed by coating and curing a second photosensitive resin composition on the first cured film (411); a third cured film (413) formed by coating and curing a third photosensitive resin composition on the second cured film (412); and an nth cured film (nn) formed by coating and curing an nth photosensitive resin composition on the third cured film (413). Here, n can be 4 or greater, particularly 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

[0219] In the structure for the quantum dot barrier ribs, the thickness and optical density of each cured film can be the same or different.

[0220] The structure for the quantum dot barrier ribs can have an optical density of 0.05 / μm to 2.0 / μm, 0.05 / μm to 1.5 / μm, 0.05 / μm to 1.0 / μm, 0.05 / μm to 0.5 / μm, or 0.1 / μm to 0.2 / μm. Here, the transmittance at 550 nm can be measured using an optical densitometer (361T manufactured by Xlite Corporation) to obtain the optical density (OD, unit: / μm) based on a thickness of 1 μm. Thus, the structure for the quantum dot barrier ribs can have a total optical density of 0.5 to 10.0, 1.0 to 6.0, or 1.0 to 4.0. The total optical density is a value obtained by multiplying the unit optical density by the total thickness of the structure for the quantum dot barrier ribs.

[0221] If the optical density and the total optical density are within the above ranges, the resolution of the display screen can be further improved.

[0222] The height difference of the cured film of the structure for the quantum dot barrier ribs is measured using SCAN PLUS by the vertical movement of the device probe tip. The SCAN PLUS is an α-step instrument (α-step profiler). The thickness of the cured film is obtained from the result. The final film thickness is a value obtained by measuring the final film of the structure for the quantum dot barrier ribs prepared by forming a pattern through exposure and development and then baking it. It includes the entire multi-layer cured film, and the final film thickness can be 6 μm to 20 μm.

[0223] In addition, in the structure for the quantum dot barrier ribs, the reflectance R measured by the SCI (including the specular reflection component) method at a wavelength of 360 nm to 740 nm, or 550 nmSCI and the reflectance R measured by the SCE method (excluding the specular reflection component) SCE can respectively satisfy the following relational expressions:

[0224] (Relational Expression 1) R SCI ≤ 5.0%

[0225] (Relational Expression 2) R SCE ≤ 0.5%

[0226] (Relational Expression 3) 2 ≤ R SCE / R SCI ≤ 10.

[0227] Specifically, R SCI can be 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to 4.6%. R SCE can be 0.5% or less, 0.4% or less, 0.1% to 0.5%, 0.1% to 0.4%, or 0.2% to 0.4%. The ratio between them (i.e., R SCE / R SCI ) can be 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8, or 4 to 7.5. Therefore, the characteristics of low reflectance and high light-shielding properties can be satisfied, and light leakage of red, green, etc. can be prevented.

[0228] Since the structure for the quantum dot barrier ribs prepared in this way has excellent characteristics, it can be advantageously used in quantum dot displays.

[0229] Implementing the embodiments of the present invention

[0230] Hereinafter, the present invention will be described in more detail with reference to the following examples. However, these examples are provided to illustrate the present invention, and the scope of the present invention is not limited thereto.

[0231] In the following synthesis examples, the weight-average molecular weight was determined by gel permeation chromatography (GPC, eluent: tetrahydrofuran) with reference to polystyrene standards.

[0232] Synthesis Example 1: Preparation of Copolymer (A-1)

[0233] A 500-ml round-bottom flask equipped with a reflux condenser and a stirrer was charged with 100 g of a mixture consisting of 50 mol% of N-phenylmaleimide (PMI), 6 mol% of styrene (Sty), 10 mol% of glycidyl ether of 4-hydroxybutyl acrylate (4-HBAGE), and 34 mol% of (meth)acrylic acid (MAA), together with 300 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent and 2 g of 2,2'-azobis(2,4-dimethylvaleronitrile) as a radical polymerization initiator. Thereafter, the mixture was heated to 70 °C and stirred for 5 hours to obtain a copolymer (A-1) solution having a solid content of 31% by weight. The copolymer thus prepared had an acid value of 100 mg KOH / g and a weight-average molecular weight (Mw) of 7,000 Da measured by gel permeation chromatography with reference to polystyrene.

[0234] Synthesis Example 2: Preparation of copolymer (A-2)

[0235] In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, a monomer mixture consisting of 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of hexafluoroisopropyl (meth)acrylate, and 20 mol% of butyl (meth)acrylate, and a mixture in which 2.74 g of V-59 as a radical polymerization initiator had been dissolved in 30 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent were added dropwise to the solvent heated to 80 °C over 4 hours. Then, polymerization was carried out for 20 hours to obtain copolymer (A-2). The copolymer thus prepared had an acid value of 85 mg KOH / g, a weight-average molecular weight (Mw) of 9,053 Da measured by gel permeation chromatography with reference to polystyrene, a solid content of 30.5% by weight, and a polydispersity (Mw / Mn) of 2.3.

[0236] Synthesis Example 3: Preparation of copolymer (A-3)

[0237] In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, a monomer mixture consisting of 30 g of 30 mol% methyl (meth)acrylate, 20 mol% (meth)acrylic acid, 30 mol% octafluoropentyl (meth)acrylate, and 20 mol% butyl (meth)acrylate, and a mixture in which 2.74 g of V-59 as a radical polymerization initiator was dissolved in 30 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent were added dropwise to the solvent heated to 80°C over 4 hours. Then, polymerization was carried out for 20 hours to obtain copolymer (A-3). The copolymer thus prepared had an acid value of 66 mg KOH / g, a weight-average molecular weight (Mw) of 14,968 Da when measured by gel permeation chromatography and referenced to polystyrene, a solid content of 31.2 wt%, and a polydispersity (Mw / Mn) of 2.3.

[0238] Synthesis Example 4: Preparation of Copolymer (A-4)

[0239] In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, a monomer mixture consisting of 30 g of 30 mol% methyl (meth)acrylate, 20 mol% (meth)acrylic acid, 30 mol% trifluoroethyl (meth)acrylate, and 20 mol% butyl (meth)acrylate, and a mixture in which 2.74 g of V-59 as a radical polymerization initiator was dissolved in 30 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent were added dropwise to the solvent heated to 80°C over 4 hours. Then, polymerization was carried out for 20 hours to obtain copolymer (A-4). The copolymer thus prepared had an acid value of 98 mg KOH / g, a weight-average molecular weight (Mw) of 7,551 Da when measured by gel permeation chromatography and referenced to polystyrene, a solid content of 31.6 wt%, and a polydispersity (Mw / Mn) of 2.04.

[0240] The structural units and their contents used in the preparation of the copolymers in Synthesis Examples 1 to 4 are shown in Table 1 below.

[0241] [Table 1]

[0242]

[0243] Preparation Example: Preparation of the photosensitive resin composition

[0244] The photosensitive resin compositions of the following Preparation Examples were prepared using the copolymers prepared in the above Synthesis Examples.

[0245] The components used in the following Preparation Examples are shown in Table 2 below.

[0246] [Table 2]

[0247]

[0248] Preparation Examples

[0249] <Preparation of Photosensitive Resin Composition>

[0250] Preparation Example 1-1: First Photosensitive Resin Composition

[0251] 100 parts by weight (solid content) of copolymer (A-1) obtained in Synthesis Example 1 as a copolymer, 40 parts by weight of 6-functional pentaerythritol hexaacrylate (DPHA) (B-1, manufactured by Nippon Kayaku Co., Ltd.) as a photopolymerizable compound (B), 40 parts by weight of 4-functional bis(trimethylolpropane) tetraacrylate (B-2, trade name T-1420, manufactured by Nippon Kayaku Co., Ltd.), 2.0 parts by weight of N-1919 (oxime-based photoinitiator 1) (C-1), 1.0 part by weight of SPI-03 (oxime-based photoinitiator 2) (C-2), and 0.4 part by weight of (E)-2-(4-styrylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine (triazine photoinitiator 3) (C-3) as a photopolymerization initiator (C), 6.8 parts by weight of BK-7539 (manufactured by TOKUSHIKI Co., Ltd.) as a black organic colorant (D-2), 0.2 part by weight of F563 (manufactured by DIC Corporation) as a surfactant (E), and 0.5 part by weight of MIPHOTO GHP03HHP (manufactured by Misumi Shoji Co., Ltd.) (epoxy curing agent (F-1)) as an additive were uniformly mixed. Propylene glycol monomethyl ether acetate (PGMEA) was added to the mixture so that the solid content of the mixture was 25% by weight. The resulting product was mixed with a vibrator for 2 hours to prepare a liquid-phase photosensitive resin composition.

[0252] Preparation Example 1-2: Second Photosensitive Resin Composition

[0253] A photosensitive resin composition was prepared in the same manner as in Preparation Example 1-1, except that 0.6 part by weight of SPI-03 (oxime-based photoinitiator 2) (C-2) and 0.4 part by weight of (E)-2-(4-styrylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine (triazine photoinitiator 3) (C-3) were used as the photopolymerization initiator (C), and 12.7 parts by weight of BK-7539 (manufactured by TOKUSHIKI Co., Ltd.) was used as the organic colorant (D-2), which was uniformly mixed without adding an additive, and a mixture of propylene glycol monomethyl ether acetate (PGMEA) (G-1) and 3-methoxybutyl acetate (3BMA) (G-2) was added so that the solid content of the mixture was 25% by weight.

[0254] Preparation Examples 2-1 to 25-2

[0255] A photosensitive resin composition was prepared in the same manner as in Preparation Example 1-1, except that the types and / or amounts of the corresponding components were changed as shown in Table 3 below.

[0256] [Table 3]

[0257]

[0258]

[0259]

[0260]

[0261]

[0262]

[0263] <Preparation of the Structure for Quantum Dot Barrier Ribs>

[0264] Example 1

[0265] The photosensitive resin composition obtained in Preparation Example 1-1 was coated as the first photosensitive resin composition on a glass substrate immersed in distilled water and then dried using a spin coater. It was prebaked at 90 °C for 150 seconds to form a coating film with a thickness of 6.0 μm or more. The coating film was further intermediate baked at 130 °C for 300 seconds to remove the solvent, thereby forming a first cured film (i.e., the lower layer film).

[0266] The photosensitive resin composition obtained in Preparation Example 1-2 was coated as the second photosensitive resin composition on the first cured film. It was prebaked at 90 °C for 150 seconds to form a second cured film (i.e., the upper layer film) with a thickness of 6.0 μm or more, thereby preparing a multilayer cured film having two layers.

[0267] Thereafter, a mask was placed on the multilayer cured film such that an area of 5 cm by 5 cm thereof was 100% exposed and the gap with the substrate was minimized in a contact manner. Thereafter, using an aligner (model name: MA6) that emits light having a wavelength of 200 nm to 450 nm, based on a wavelength of 365 nm, it was exposed for a certain period of time at an exposure dose of 150 mJ / cm 2 Then, it was developed with an aqueous potassium hydroxide solution diluted to a concentration of 0.04 wt% at 23 °C until the unexposed portions were completely washed away. The pattern thus formed was post-baked in an oven at 230 °C for 30 minutes to prepare the structure for quantum dot barrier ribs.

[0268] Examples 2 to 13

[0269] A structure for quantum dot barrier ribs including a multilayer cured film was prepared in the same manner as in Example 1, except that the first photosensitive resin composition and the second photosensitive resin composition having the components and contents shown in Table 3 above (Preparation Examples 2-1 to 13-2) were used, and the development time and film thickness were changed as shown in Tables 4 and 6 below.

[0270] Comparative Examples 1 to 11

[0271] A structure for quantum dot barrier ribs including a single-layer cured film was prepared in the same manner as in Example 1, except that a photosensitive resin composition having the components and contents shown in Table 3 above (Preparation Examples 14 to 24) was used to form the first cured film, and the development time and film thickness were changed as shown in Tables 4 and 6 below to prepare a single-layer cured film.

[0272] Comparative Example 12

[0273] A structure for quantum dot barrier ribs including a multilayer cured film was prepared in the same manner as in Example 1, except that the first photosensitive resin composition (Preparation Example 25-1) and the second photosensitive resin composition (Preparation Example 25-2) having the components and contents shown in Table 3 above were used, and the development time and film thickness were changed as shown in Tables 4 and 6 below.

[0274] Evaluation Example 1: Development time

[0275] When developing with a 0.04 wt% aqueous potassium hydroxide solution in the methods for preparing the structures for quantum dot barrier ribs in the Examples and Comparative Examples, the time until the unexposed portion was completely washed away (until the O-ring portion of the stage of the developing apparatus was completely visible behind the substrate) was measured.

[0276] - If the development time is 300 seconds or shorter, it was evaluated as ○. If it exceeds 300 seconds, it was evaluated as x.

[0277] Evaluation Example 2: Resolution and critical dimension of line patterns

[0278] To measure the pattern resolution and critical dimension (CD; unit: μm) of the line patterns in the structures for quantum dot barrier ribs in the Examples and Comparative Examples, the line CD was observed with a micro optical microscope (STM6-LM, manufacturer: Olympus Corporation (OLYMPUS)) and an X-ray scanning electron microscope (SEM; S4300). The results are shown in Figure 5 and 6 below.

[0279] In addition, the size of the 13-μm line pattern of the photomask was observed to measure the resolution. That is, the pattern size of the line pattern after curing was measured (13-μm patterning under the optimum exposure dose condition (150 mJ / cm2)). The smaller the value, the more excellent the resolution because smaller patterns can be formed.

[0280] - If the resolution is greater than 0 to 20 μm, it is evaluated as ○. If it exceeds 20 μm, it is evaluated as x.

[0281] Evaluation Example 3: Thickness of the cured film before and after post-baking

[0282] The height difference of the structure for the quantum dot barrier rib of each of the examples and comparative examples was measured using SCAN PLUS by the vertical movement of the device probe tip. SCAN PLUS is an α-step instrument (α-step profiler). The thickness was obtained from the results.

[0283] The initial film thickness refers to the thickness of the film formed after pre-baking before the exposure and development steps in the preparation of the structure for the quantum dot barrier rib (i.e., the film thickness before post-baking).

[0284] The final film thickness refers to the thickness of the final film of the structure for the quantum dot barrier rib formed after the exposure and development steps to form a pattern and subsequent post-baking (i.e., the film thickness after post-baking).

[0285] - If the initial film thickness and the final film thickness are multilayered, it is evaluated as ○. If they are single-layered, it is evaluated as x.

[0286] Evaluation Example 4: Optical density

[0287] The transmittance at 550 nm of the cured film of the structure for the quantum dot barrier rib of the examples and comparative examples was measured using an optical density meter (361T manufactured by Xlite Corporation). The optical density (OD, unit: / μm) based on a thickness of 1 μm and the optical density of the final film thickness were determined. The total optical density is the value obtained by multiplying the optical density based on 1 μm by the final film thickness (in the case of Comparative Examples 11 and 12, the total optical density was calculated based on the film thickness before post-baking).

[0288] Total optical density = Optical density based on 1 μm ( / μm) × Final film thickness (μm)

[0289] Evaluation Example 5: Reflectance

[0290] The R of the cured film of the structure for the quantum dot barrier rib of each of the examples and comparative examples was measured at a wavelength of 550 nm using a spectrophotometer device (CM-3700A)SCI and R SCE . Then calculate the ratio between them (R SCE / R SCI ).

[0291] - If R SCI is 5.0% or less, it is evaluated as ○. If it exceeds 5.0%, it is evaluated as x.

[0292] - If R SCE is 0.5% or less, it is evaluated as ○. If it exceeds 0.5%, it is evaluated as x.

[0293] - If R SCE / R SCI is 2% to 10%, it is evaluated as ○. If it is less than 2.0% or greater than 10%, it is evaluated as x.

[0294] Evaluation Example 6: Contact Angle

[0295] The contact angles of the cured films of the structures for quantum dot barrier ribs of the measurement examples and comparative examples were measured using 2-ethoxyethanol (polar solvent) and a contact angle measuring device (DM300, Kyowa Electric Industry Co., Ltd.).

[0296] - It was confirmed that the cured film without the fluorine-containing copolymer had a contact angle of 0°, and the cured film containing the fluorine-containing copolymer had a contact angle of 10° to 20°.

[0297] The results of the evaluation examples are shown in Tables 4 to 7 below.

[0298] [Table 4]

[0299]

[0300] [Table 5]

[0301]

[0302] [Table 6]

[0303]

[0304] [Table 7]

[0305]

[0306] As shown in Tables 4 to 7, the structures of Examples 1 to 13 for quantum dot barrier ribs prepared from the photosensitive resin compositions of Preparation Examples 1-1 to 13-2 have a total thickness satisfying the range of 6 μm to 20 μm. A sufficient thickness for use as a quantum dot barrier rib can be formed. If a multilayer cured film having a thickness within the above range is used as a quantum dot barrier rib, when a quantum dot solution is dropped, it will not overflow the barrier rib. Therefore, the color compositions will not mix, and resolution degradation can be prevented.

[0307] In addition, the structures of Examples 1 to 13 for quantum dot barrier ribs have an R of 5% or less SCI an R of 0.5% or less SCE and an R of 2 to 10 SCE / R SC . Therefore, it was confirmed that they satisfy the low reflectivity characteristics. In addition, it was confirmed that they can achieve high light-shielding characteristics because the total optical density of the final film thickness after post-baking falls within the scope of the present invention. The resolution at the level of 12 μm to 16 μm is excellent.

[0308] In contrast, the structures of Comparative Examples 1 to 11 for quantum dot barrier ribs prepared from single-layer cured films using the photosensitive resin compositions of Preparation Examples 14 to 24 have a total thickness of 3 μm to less than 6 μm. If a structure having this thickness range is used as a quantum dot barrier rib, the quantum dot solution may overflow the barrier rib, making color separation difficult and liable to be contaminated, resulting in resolution degradation.

[0309] In particular, since the structures of Comparative Examples 3 and 4 for quantum dot barrier ribs have a total optical density of 0.7, their light-shielding characteristics are poor. They have an R of more than 5% SCI an R of more than 0.5% SCE and an R of more than 10 SCE / R SC , indicating that they have a high reflectivity compared to the structures of Examples 1 to 13 for quantum dot barrier ribs. Therefore, they cannot achieve the low reflectivity and high light-shielding characteristics as desired in the present invention.

[0310] Figure 5 and 6 are photos of the cross-sections and sides of the structures of Examples 1 to 13 and Comparative Examples 1 to 12 for quantum dot barrier ribs observed with an optical microscope.

[0311] As confirmed by Figure 5 the cured films of the structures of Examples 1 to 13 for quantum dot barrier ribs are all clear and distinct in terms of line width and uniform and thick in terms of film thickness.

[0312] In contrast, as confirmed by Figure 6It was confirmed that the cured films for the structure of the quantum dot barrier ribs in Comparative Examples 1 to 12 were not suitable for the quantum dot barrier ribs because they had a thin thickness. In particular, in Comparative Examples 11 and 12, no pattern was formed due to film separation; or the pattern was not clear. In particular, although the structure for the quantum dot barrier rib in Comparative Example 12 was prepared as a multi-layer cured film, the content of the colorant was high, resulting in film separation due to the lack of photocuring under the optimal exposure dose condition (150 mJ / cm 2 ), and the resolution was 0 μm; and the pattern was not clear.

[0313] Reference numerals

[0314] 100: Substrate structure

[0315] 110: Transparent substrate 120: Barrier rib

[0316] 130: First quantum dot solution 140: Second quantum dot solution

[0317] 150: Third quantum dot solution

[0318] 200, 300, 400: Structures for quantum dot barrier ribs

[0319] 210, 310, 410: Substrates

[0320] 211, 311, 411: First cured film

[0321] 212, 312, 412: Second cured film

[0322] 313, 413: Third cured film

[0323] nn: nth cured film

Claims

1. A structure for a quantum dot barrier rib, the structure comprising a cured film formed from a photosensitive resin composition, the photosensitive resin composition comprising: (A) A copolymer; (B) A photopolymerizable compound; (C) A photopolymerization initiator; and (D) A colorant comprising a black colorant, wherein the structure for the quantum dot barrier rib has a total thickness after post-baking of 6 μm or greater, an optical density of 0.05 / μm to 2.0 / μm, and The reflectance R measured by the specular component included (SCI) method at a wavelength of 550 nm, which respectively satisfies the following relational expressions SCI and the reflectance R measured by the specular component excluded (SCE) method SCE : (Relationship 1) R SCI ≤ 5.0% (Relationship 2) R SCE ≤ 0.5% (Relationship 3) 2% ≤ R SCE / R SCI ≤ 10%.

2. The structure for a quantum dot barrier rib according to claim 1, wherein, the black colorant comprises at least one selected from the group consisting of a black organic colorant and a black inorganic colorant.

3. The structure for a quantum dot barrier rib according to claim 2, wherein, the black organic colorant is used in an amount of 3 to 40 parts by weight based on 100 parts by weight of the copolymer (A).

4. The structure for a quantum dot barrier rib according to claim 2, wherein, the black inorganic colorant is used in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the copolymer (A).

5. The structure for a quantum dot barrier rib according to claim 1, wherein, the colorant (D) further comprises a colorant containing at least one selected from the group consisting of a blue colorant and a purple colorant.

6. The structure for a quantum dot barrier rib according to claim 5, wherein, the blue colorant and the purple colorant are each used in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the copolymer (A).

7. The structure for a quantum dot barrier rib according to claim 1, wherein, the colorant (D) is used in an amount of 1 to 40 parts by weight based on 100 parts by weight of the copolymer (A).

8. The structure for a quantum dot barrier rib according to claim 1, wherein, the photosensitive resin composition further comprises at least one selected from the group consisting of an epoxy compound, a photo-base generator, a thiol compound, and a compound derived from an epoxy resin.

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