Method of device operation and substrate processing apparatus

Abstract

An example of a method of device operation includes providing a gas to an interior of a reactor chamber to perform a process on a substrate in the interior of the reactor chamber, and providing plasma to an exhaust line in communication with the reactor chamber or a dry pump in communication with the exhaust line, without passing through the reactor chamber, to perform a cleaning of at least one of the exhaust line and the dry pump during loading / unloading of the substrate to / from the reactor chamber.

Description

TECHNICAL FIELD

[0001] Examples related to a device operation method and a substrate processing apparatus are described. BACKGROUND

[0002] Gases supplied to the reactor chamber are exhausted to the outside through the exhaust line by the dry pump. For example, in a process that causes many by-products, deposits are generated in the exhaust line or the dry pump. These deposits interfere with the operation of the apparatus, or cause locking of the dry pump based on a protection function of the dry pump. For example, for a Roots vacuum pump, a large amount of deposits can cause poor rotation of the impeller.

[0003] By providing a cleaning gas to the exhaust line from the remote plasma unit via the reactor chamber, it is possible to suppress clogging of the exhaust line and the dry pump. However, since this cleaning interrupts the processing in the reactor chamber, this is a factor that delays the processing of the apparatus. It can also be said that this causes a decrease in its productivity. SUMMARY

[0004] Some examples described herein can solve the above problems. Some examples described herein can provide a device operation method and a substrate processing apparatus that can efficiently clean the exhaust system.

[0005] In some examples, a device operation method includes: supplying a gas to an interior of a reactor chamber to perform processing on a substrate in the interior of the reactor chamber; and during loading of the substrate into / from the reactor chamber, not supplying a plasma to an exhaust line in communication with the reactor chamber or a dry pump in communication with the exhaust line via the reactor chamber to perform cleaning of at least one of the exhaust line and the dry pump. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 is a diagram schematically representing a device operation method;

[0007] Figure 2 is a diagram representing a schematic configuration of a substrate processing apparatus;

[0008] Figure 3 is a diagram representing another schematic configuration of a substrate processing apparatus;

[0009] Figure 4 is a perspective view of a substrate processing apparatus according to an example;

[0010] Figure 5 is a diagram representing another schematic configuration of a substrate processing apparatus;

[0011] Figure 6 is a perspective view showing a schematic configuration of a dry pump;

[0012] Figure 7is a cross-sectional view showing a schematic configuration of a dry pump; and

[0013] Figure 8 is a diagram showing a method of operating an apparatus according to a variant. DETAILED DESCRIPTION

[0014] A method of operating an apparatus and a substrate processing apparatus are described with reference to the drawings. Identical or corresponding components use the same symbols and sometimes a repeated explanation thereof is omitted.

[0015] Figure 1 is a diagram schematically showing a method of operating an apparatus. With this example, it is explained how the apparatus operates to perform film formation on a substrate in a reactor chamber. The substrate is, for example, a wafer. In the reactor chamber, for example, processes of physical vapor deposition, epitaxial deposition, other deposition, diffusion, and etching can be performed. First, in step S1, a substrate is set, for example, on a susceptor inside the reactor chamber. The time for loading the substrate is, for example, 22 seconds.

[0016] Next, in step S2, a process is performed on the substrate. The process is a schematic film formation on the substrate by plasma CVD. The film formation (process) can be performed by supplying a gas to the inside of the reactor chamber. Reforming, etching, and the like of a film of the substrate can be performed by supplying a gas to the reactor chamber.

[0017] Next, in step S3, the substrate is unloaded. The time for unloading the substrate is, for example, 22 seconds. Next, in step S4, the inside of the reactor chamber is cleaned. According to the example, the reactor chamber is cleaned by supplying a plasma for cleaning from a remote plasma unit to the reactor chamber. The time for cleaning the reactor chamber is, for example, 54 seconds.

[0018] Next, in step S5, a new substrate is supplied to the reactor chamber. In step S6, a process is performed on the substrate. In step S7, the substrate is unloaded.

[0019] This series of processes according to a main recipe is repeated, whereby processes are sequentially performed on the substrate. According to the example, cleaning of the reactor chamber is performed according to the main recipe, and cleaning of at least one of an exhaust line and a dry pump is performed according to a sub-recipe parallel to the main recipe. In some examples, the exhaust line is a pipe that communicates between the reactor chamber and the dry pump. In some examples, the dry pump is a device that removes gas molecules from the reactor chamber. During steps S1 and S5 of loading the substrate and steps S3 and S7 of unloading the substrate, the sub-recipe causes plasma to be supplied to the exhaust line that communicates with the reactor chamber or to the dry pump that communicates with the exhaust line, without being supplied via the reactor chamber. According to the sub-recipe, at least one of the exhaust line and the dry pump is cleaned at the time of loading and unloading the substrate.

[0020] For example, the sum of the time from time T1 to time T2 and the time from time T3 to time T4 can be set to about 65 seconds.

[0021] By simultaneously performing the substrate transport and the exhaust system cleaning as above, productivity can be improved.

[0022] Figure 2 is a diagram showing a schematic configuration of a substrate processing apparatus for the above-described apparatus operation method. In a reactor chamber 10, a substrate undergoes processes such as film formation, etching, and reforming using a gas. These processes can include generation of plasma. A remote plasma unit 14 communicates with the reactor chamber 10 via a connection line 12, and can supply plasma to the reactor chamber 10. The remote plasma unit 14 makes a gas (e.g., Ar or NF3) supplied from a gas source Gl into plasma, and supplies it as plasma for cleaning to the reactor chamber 10. Meanwhile, in substrate processing, a gas for film formation is supplied to the reactor chamber 10 from a gas source G2 connected to the connection line 12. The gas for film formation can contain, for example, TEOS, Ar, and O2.

[0023] An exhaust line 16 is connected to the reactor chamber 10. A gas in the reactor chamber 10 is exhausted via the exhaust line 16 by a dry pump 20. The dry pump 20 is, for example, a Roots dry vacuum pump. The gas for film formation on a substrate and the gas for cleaning the reactor chamber 10 can be exhausted via the exhaust line 16 by the dry pump 20.

[0024] In this apparatus, a bypass line 30 is provided to connect the connection line 12 and the exhaust line 16. The bypass line 30 is a path that enables the cleaning gas to be supplied from the remote plasma unit 14 to the exhaust line 16 and the dry pump 20 without passing through the reactor chamber 10.

[0025] The substrate processing apparatus as above can implement the apparatus operation method in Figure 1 . In film formation in step 2, for example, the valves V1, V2, and V4 in Figure 2 are closed, and the valve V3 in Figure 2 is opened, thereby forming a film on a substrate by a method such as plasma CVD or plasma ALD. Of course, supply of a processing gas is required to form a film. In step 4, the valves V2 and V4 are closed and the valves V1 and V3 are opened, and a cleaning gas containing plasma is supplied from the remote plasma unit 14 to the reactor chamber 10 via the connection line 12.

[0026] For example, when cleaning the exhaust line 16 and the reactor chamber 10, the valves VI and V3 are closed and the valves V2 and V4 are opened, and plasma is supplied from the remote plasma unit 14 to the majority of the exhaust line 16 via the bypass line 30. When the pressure control valve (PCV) 18 suppresses the flow to the reactor chamber 10 via the bypass line 30, the valve V3 can be opened.

[0027] In each of the above steps, the pressure control valve (PCV) 18 can adjust the gas flow. The PCV 18 can be used to adjust the amount of plasma supplied from the bypass line 30 to the exhaust line 16. The PCV is a valve that sets the opening as a percentage in order to obtain a user-specified pressure.

[0028] When cleaning the exhaust line 16 and the dry pump 20, the use of cleaning gas via the bypass line 30 instead of via the reactor chamber 10 improves the cleaning rate.

[0029] Figure 3 is a diagram showing a schematic configuration of a substrate processing apparatus according to another example. The apparatus has a PCV 40 on the exhaust line 16, and also has a PCV 42 on the bypass line 30. The use of the two PCVs 40 and 42 can enhance the flexibility of control. According to other examples, valves and PCVs can be provided at other positions, and some of the valves and PCVs in Figure 2 and 3 may be omitted.

[0030] Figure 4 is a perspective view of a substrate processing apparatus according to an example. According to an example, the remote plasma unit 14 is disposed above the reactor chamber 10, while the exhaust line is disposed below the reactor chamber 10. Figure 4 The bypass line 30 is shown as being disposed along the surface of the reactor chamber 10. The bypass line 30 can be disposed along the surface of the reactor chamber 10 to obtain its minimum path length. By making the bypass line 30 a curved line or rounding the curved portion of the bypass line 30, it is possible to suppress the deactivation of the plasma supplied from the remote plasma unit 14.

[0031] Figure 5 is a diagram showing a schematic configuration of a substrate processing apparatus according to another example. The substrate processing apparatus can be considered as a dry pump itself with a cleaning function. According to an example, the dry pump 20 communicates with the reactor chamber 10 via the exhaust line 16, and is directly connected to a dedicated remote plasma unit 50. The dedicated remote plasma unit 50 and the dry pump 20 communicate with each other through a dedicated line 52. The dedicated remote plasma unit 50 placed adjacent to the dry pump 20 can shorten the dedicated line 52. The plasma generated by the dedicated remote plasma unit 50 can be in agreement with the plasma generated by the remote plasma unit 14.

[0032] In this example, according to a sub-arrangement, the plasma is directly provided to the dry pump 20 by the dedicated remote plasma unit 50. Cleaning of the exhaust line 16 can be performed with the plasma via the reactor chamber 10. Using the dedicated remote plasma unit 50 can effectively remove deposits in the dry pump 20.

[0033] Figure 6 is a perspective view showing a schematic configuration of the dry pump 20 in Figure 5 . The dry pump 20 includes a first inlet 20a communicating with the exhaust line 16, a second inlet 20b communicating with the dedicated remote plasma unit 50, and an exhaust port 20c.

[0034] Figure 7 is a sectional view showing a schematic configuration of the dry pump 20 in Figure 6 . According to an example, there are a plurality of chambers inside the dry pump 20, and an impeller is provided in each chamber. In Figure 7 , a first impeller 20e provided in a first space 20d communicating with the first inlet 20a and a second impeller 20g provided in a second space 20f communicating with the first space 20d are provided. Further, a first path 20A from the second inlet 20b to the first space 20d and a second path 20B from the second inlet 20b to the second space 20f are provided. A first valve 20C opening and closing the first path 20A, a second valve 20D opening and closing the second path 20B can be provided.

[0035] The plurality of first impellers 20e and the plurality of second impellers 20g rotate, whereby gas is exhausted from the exhaust line 16 to the exhaust port 20c via the first inlet 20a, the first space 20d, and the second space 20f. When deposits occur on the entirety of the first impellers 20e and the second impellers 20g or on their shaft portions, the operation of the dry pump 20 can be disturbed. These deposits are removed with the plasma from the dedicated remote plasma unit 50. For example, the first valve 20C is opened and the second valve 20D is closed, and the plasma is provided from the dedicated remote plasma unit 50 to the first space 20d to clean the first space 20d and the first impeller 20e. Further, the first valve 20C is closed and the second valve 20D is opened, and the plasma is provided from the dedicated remote plasma unit 50 to the second space 20f to clean the second space 20f and the second impeller 20g. By providing the plasma from the dedicated remote plasma unit 50 to the plurality of chambers, respectively, each impeller can be sufficiently cleaned.

[0036] As described above, the plasma generated by the remote plasma unit 14 or the dedicated remote plasma unit 50 and used for cleaning can be energy-excited radicals and / or neutrals. It is contemplated that the energy-excited radicals and / or neutrals react with process-generated gases, other materials, or deposits in the reaction chamber 10 into components that are less damaging to the equipment.

[0037] Figure 8 is a diagram illustrating a method of operating the apparatus according to the modification example. In this example, the cleaning of at least one of the exhaust line and the dry pump is completed before the loading or unloading of the substrate is completed. The time period from the time T1' at which the cleaning is completed to the time T2 at which the film formation process is started allows the opening / closing state of the valve and / or the PCV to be set such that the film formation process can be started. Further, the time period from the time T3' at which the cleaning is completed to the time T4 at which the cleaning of the reactor chamber is started allows the opening / closing state of the valve and / or the PCV to be set such that the cleaning of the reactor chamber can be started. As above, the cleaning of at least one of the exhaust line and the dry pump being completed before the loading or unloading of the substrate is completed can contribute to further improving the productivity.

Claims

1. A method of device operation comprising: providing a remote plasma unit; providing a gas and plasma from the remote plasma unit to an interior of a reactor chamber to perform a process on a substrate in the interior of the reactor chamber; and during loading of the substrate into the reactor chamber / unloading of the substrate from the reactor chamber, providing the plasma from the remote plasma unit to an exhaust line in communication with the reactor chamber or a dry pump in communication with the exhaust line without passing through the reactor chamber to perform cleaning of at least one of the exhaust line and the dry pump, providing the plasma from the remote plasma unit to the reactor chamber via a connecting line connecting the remote plasma unit and the reactor chamber to perform cleaning of the reactor chamber, when performing the cleaning of at least one of the exhaust line and the dry pump, providing the plasma from the remote plasma unit to the exhaust line via a bypass line connecting the remote plasma unit and the exhaust line; and before completion of the loading or unloading of the substrate, completing the cleaning of at least one of the exhaust line and the dry pump; and wherein a period of the cleaning of at least one of the exhaust line and the dry pump is shorter than a period of the loading of the substrate into the reactor chamber / the unloading of the substrate from the reactor chamber. An amount of the plasma provided from the bypass line to the exhaust line is adjusted by a pressure control valve.

2. The apparatus operating method of claim 1, wherein, When performing the cleaning of at least one of the exhaust line and the dry pump, the plasma is directly provided to the dry pump by a dedicated remote plasma unit provided separately from the remote plasma unit.

3. The apparatus operating method of claim 1, wherein, The dry pump has a plurality of chambers in each of which a rotating impeller is provided, and the plasma of the dedicated remote plasma unit is provided to the plurality of chambers, respectively.

4. The apparatus operating method of claim 3, wherein, The cleaning of the reactor chamber is performed according to a main scenario, and the cleaning of at least one of the exhaust line and the dry pump is performed according to a sub scenario parallel to the main scenario.

5. The apparatus operating method according to any one of claims 1 to 4, wherein, The dry pump has a plurality of chambers in each of which a rotating impeller is provided, and the plasma of the dedicated remote plasma unit is provided to the plurality of chambers, respectively. The cleaning of the reactor chamber is performed according to a main scenario, and the cleaning of at least one of the exhaust line and the dry pump is performed according to a sub scenario parallel to the main scenario.

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