Substrate processing equipment

Abstract

A substrate processing device includes: a process chamber; a support portion, which is arranged in the process chamber and has a substrate loading area in which a substrate is placed; a heating portion, which is arranged in a position opposite to the substrate loading area to heat the substrate loading area; and a reflecting member, which is arranged in a position opposite to the substrate loading area in the process chamber, and a sealed hollow portion is arranged in the reflecting member.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority benefit of Korean Patent Application No. 10-2019-0061238 filed on May 24, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to a substrate processing apparatus. Background Art

[0004] In the manufacturing process of semiconductor devices, various material layers are formed on a semiconductor substrate. In order to make these material layers have uniform thickness in all areas regardless of the shape and morphology of the underlying layer, it is desirable to uniformly supply source gases and maintain a uniform temperature of the wafer on which the material layer is formed during the process required to form the material layer.

[0005] However, as the diameter of the wafer becomes larger, the temperature may vary even depending on some areas of a single wafer. Therefore, it may be difficult to ensure the temperature uniformity of the wafer. In addition, as a process of simultaneously processing multiple wafers is applied, it may be more difficult to uniformly heat the multiple wafers. Summary of the invention

[0006] Example embodiments provide a substrate processing apparatus that can reduce (or alternatively, mitigate) a temperature distribution difference of a substrate to ensure temperature uniformity while enhancing a heat insulation effect during substrate processing to suppress (or alternatively, prevent) loss of energy required to heat the substrate.

[0007] According to an example embodiment, a substrate processing apparatus includes: a process chamber; a support portion located in the process chamber, the support portion including a substrate loading area configured to support a substrate placed in the substrate loading area; a heating portion configured to heat the substrate loading area; and a reflective member adjacent to the substrate loading area in the process chamber, the reflective member having a sealed hollow portion located therein.

[0008] According to an example embodiment, a substrate processing apparatus includes: a process chamber; a support portion located in the process chamber, the support portion including a substrate loading area configured to support a substrate placed in the substrate loading area; a heating portion configured to heat the substrate loading area; and a reflective member adjacent to the substrate loading area in the process chamber, the reflective member having a sealed hollow portion located therein, the reflective member being configured to reflect heat radiated from the substrate loading area to the reflective member, the reflective member including at least one of quartz, ceramic and metal, wherein the reflective member is disc-shaped and has a diameter of 280 mm to 320 mm and a thickness of 10 mm to 20 mm, and the sealed hollow portion located therein has a thickness of 3 mm to 5 mm.

[0009] According to an example embodiment, a substrate processing apparatus includes: a process chamber; and a support portion located in the process chamber, the support portion including a substrate loading area, the substrate loading area being configured to support a substrate placed in the substrate loading area, the support portion including a heating portion located below the substrate loading area and a hollow portion located below the heating portion, the hollow portion being defined by at least three inner surfaces, the at least three inner surfaces including a first inner surface facing the substrate loading area, a second inner surface opposite to the first inner surface, and an inner side surface connecting the first inner surface and the second inner surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which:

[0011] Figure 1 is a schematic perspective view of a substrate processing apparatus according to an example embodiment;

[0012] Figure 2 It shows that Figure 1 A schematic cross-sectional view of a substrate placed in a substrate loading area;

[0013] Figure 3A yes Figure 1 a top view of a reflective member;

[0014] Figure 3B is when Figure 3A A side cross-sectional view when viewed in the direction I-I';

[0015] Figure 3C yes Figure 3B an enlarged view of part A;

[0016] Figure 4A and Figure 4B shows a comparison between a heat reflectivity of a reflective member according to example embodiments and a heat reflectivity of a reflective member according to a comparative example;

[0017] Figures 5 to 11 Various examples of reflective members according to example embodiments are shown;

[0018] Figures 12 to 17 A substrate processing apparatus according to an example embodiment is shown; and

[0019] 18A to 18C A method of manufacturing a reflective member according to example embodiments is illustrated. DETAILED DESCRIPTION

[0020] Hereinafter, example embodiments will be described with reference to the accompanying drawings.

[0021] Will refer to Figures 1 to 3C A substrate processing apparatus according to example embodiments will be described. Figure 1 is a schematic perspective view of a substrate processing apparatus according to an example embodiment, Figure 2 It shows that Figure 1 A schematic cross-sectional view of a substrate placed in a substrate loading area. Figure 3A yes Figure 1 A top view of a reflective member, Figure 3B is when Figure 3A A side cross-sectional view when viewed in the direction I-I', Figure 3C yes Figure 3B An enlarged view of part A of FIG.

[0022] Reference Figure 1 and Figure 2 , a substrate processing apparatus 10 according to an example embodiment may include: a process chamber 100; a support portion 200 having a substrate loading area 210 in which a wafer W is placed; a heating portion 300 configured to heat the substrate loading area 210; and a reflection member 400 configured to reflect heat radiated from the substrate loading area 210 to compensate for the heat of the wafer W.

[0023] The example embodiments have been described as examples in which a semiconductor thin film is formed on a wafer W (semiconductor substrate). However, the inventive concept is not limited thereto and may be applied to various processes of heating and processing a semiconductor substrate.

[0024] The process chamber 100 may have an inner space 120 having a desired (or alternatively, predetermined) size and defined by an outer wall 110 as a reaction space in which a wafer W is processed, and may be formed of a material having improved wear resistance and improved corrosion resistance. The process chamber 100 allows the inner space 120 to be maintained in a sealed state or a vacuum state during a deposition process.

[0025] In the process chamber 100, the support part 200 may be provided with a substrate loading area 210 in which a wafer W is placed. The substrate loading area 210 may be provided to have an area sufficient for the wafer W to be placed on the top surface of the support part 200. The heating part 300 is provided in the lower space 220 of the support part 200 to heat the wafer W placed on the substrate loading area 210. The heating part 300 may radiate heat H1 to the substrate loading area 210 to heat the wafer W. A portion H2 of the heat absorbed to the heated wafer W may be radiated in the direction of the reflective member 400.

[0026] In the process of forming a specific material layer on the wafer W loaded in the substrate loading area 210, the heating part 300 can heat the wafer W to a temperature suitable for forming the material layer. After the temperature of the wafer W is stabilized to be suitable for forming the material layer, the wafer W can be maintained at a constant temperature until the material layer is formed on the wafer W. After the material layer is formed on the wafer W, the heating part 300 can also be used in a wafer annealing process performed to stabilize the material layer. For example, the heating part 300 can be used to increase the temperature of the wafer W to a temperature suitable for the annealing process, and maintain the increased temperature until the annealing process is completed.

[0027] The reflective member 400 may be disposed to face the substrate loading area 210 in the process chamber 100, and may reflect heat radiated from the wafer W disposed in the substrate loading area 210 to the wafer W. The diameter WR of the reflective member 400 may be equal to the diameter WW of the wafer W, but in consideration of the heat reflection efficiency, the diameter WR of the reflective member 400 may be greater than the diameter WW of the wafer W. The diameter WR of the reflective member W may be less than or equal to 200% of the diameter WW of the wafer W. In an example embodiment, the diameter WR of the reflective member 400 may be 200 mm to 400 mm (in detail, 280 mm to 320 mm). When the diameter WR of the reflective member 400 is less than the diameter WW of the wafer W, the heat reflection efficiency may be reduced. In addition, when the diameter WR of the reflective member 400 is greater than 200% of the diameter WW of the wafer W, the reflective member 400 may occupy an unnecessary large area of ​​the internal space 120, and therefore, the size of the process chamber 100 may be increased to a greater extent than necessary.

[0028] In example embodiments, the reflective member 400 is illustrated as having a disc shape, but the shape of the reflective member 400 is not limited thereto.

[0029] In the following, reference will be made to FIG. 3A to FIG. 3C The reflective member 400 will be described in detail. Figure 3AWhen viewed from above, the reflective member 400 has a circular shape similar to the shape of the wafer W, but the shape of the reflective member 400 is not limited thereto. The reflective member 400 may have a shape such as a square, etc., as long as the area of ​​the reflective member 400 is large enough to completely cover the wafer W.

[0030] Reference Figure 3B and Figure 3C , the reflective member 400 includes: a first plate 410, which is disposed at the lower part of the reflective member 400; a side wall portion 430, which is disposed on the first plate 410; and a second plate 420, which is disposed on the side wall portion 430. The first plate 410, the side wall portion 430, and the second plate 420 may be joined to each other to form a hollow portion 440 in the reflective member 400. Although the first plate 410, the side wall portion 430, and the second plate 420 may be joined to each other after they are formed separately, the first plate 410 and the side wall portion 430 may be formed integrally, similar to preparing a substrate having a groove. In addition, the second plate 420 and the side wall portion 430 may be variously modified, for example, formed integrally with each other. Each of the first plate 410 and the second plate 420 has an outwardly exposed surface having a planar shape. However, the exposed surface of each of the first plate 410 and the second plate 420 may have a convex shape or a concave shape, and concavities and convexities may be formed on the exposed surface.

[0031] The first plate 410 forms a first outer surface 410A of the reflective member 400 disposed to face the substrate loading area 210, and the second plate 420 forms a second outer surface 420A of the reflective member 400 disposed opposite to the first outer surface 410A. The first plate 410, the sidewall portion 430, and the second plate 420 may form an outer side surface 430A connecting the first outer surface 410A and the second outer surface 420A. According to example embodiments, the first outer surface 410A, the second outer surface 420A, and the outer side surface 430A may be coated with a reflective layer 450 formed of a material having a reflectivity higher than that of each of the first plate 410, the sidewall portion 430, and the second plate 420 to improve the reflectivity of the surface of the reflective member 400.

[0032] The hollow part 440 is a sealed internal space formed by the first plate 410, the second plate 420 and the side wall part 430. The hollow part 440 can be defined by a first inner surface 410B, a second inner surface 420B and an inner side surface 430B, the first inner surface 410B being arranged to be opposite to the first outer surface 410A of the first plate 410, the second inner surface 420B being arranged to be opposite to the second outer surface 420A of the second plate 420, and the inner side surface 430B connecting the first inner surface 410B and the second inner surface 420B to each other. Each of the first inner surface 410B, the second inner surface 420B and the inner side surface 430B can be processed to have a high reflectivity. The hollow part 440 can be vacuum, or can be sealed after being filled with air or a desired (or alternatively, predetermined) gas. As described above, the hollow part 440 with a sealed part can improve the heat reflection efficiency of the reflective member 400, which will be described in detail later.

[0033] The first plate 410, the side wall portion 430, and the second plate 420 may be formed of a highly reflective material to have a high thermal reflectivity. A more highly reflective material may be coated on the surface to further increase the reflectivity on the surface. In an example embodiment, the first plate 410, the side wall portion 430, and the second plate 420 may be formed of at least one of quartz, ceramic, and metal. According to an example embodiment, the first plate 410, the side wall portion 430, and the second plate 420 may be formed of various types of quartz, such as transparent, white, black, etc. (Heraus reflective coating) and (Heraus black quartz). In addition, the first plate 410, the side wall portion 430 and the second plate 420 may be made of a material such as aluminum oxide (Al 2 O 3 )、ZrO 2 ) and thorium oxide (ThO 2 ) ceramic. The first plate 410, the sidewall portion 430, and the second plate 420 may be formed of a highly reflective metal such as silver (Ag), gold (Au), tantalum (Ta), niobium (Nb), molybdenum (Mo), tungsten (W), nickel (Ni), platinum (Pt), aluminum nitride (AlN), etc. The first plate 410, the sidewall portion 430, and the second plate 420 may be formed of the same material. However, at least one of the first plate 410, the sidewall portion 430, and the second plate 420 may be formed of a different material.

[0034] Reference Figure 3C, the reflective member 400 may be formed in the form of a plate having a desired (or alternatively, a predetermined) thickness. The reflective member 400 may have a thickness T4 of 5 mm to 30 mm (in detail, 10 mm to 20 mm). When the thickness T4 of the reflective member 400 is less than 5 mm, the thickness T1 of the first plate 410 and the thickness T2 of the second plate 420 of the reflective member 400 may be too thin, which may significantly reduce the heat reflection efficiency of the reflective member 400. When the thickness T4 of the reflective member 400 is greater than 30 mm and the reflective member 400 is disposed on the top surface of the wafer W, the distance between the reflective member 400 and the wafer W may be significantly reduced in the limited space of the process chamber 100, thereby limiting the path of the automatic robot arm used to load the wafer W into the process chamber 100 or unload the wafer W from the process chamber 100.

[0035] Similar to the example embodiment, when the reflective layer 450 is formed on the surface of the reflective member 400, the thickness T4 of the reflective member 400 may be a thickness including the thickness of the reflective layer 450. The thickness T1 of the first plate 410 and the thickness T2 of the second plate 420 may be equal to each other, but the thickness of the first plate 410 and the thickness of the second plate 420 are not limited thereto. In some example embodiments, one of the thickness of the first plate 410 and the thickness of the second plate 420 may be greater than the other of the thickness of the first plate 410 and the thickness of the second plate 420. The hollow portion 440 may be set to have a thickness T3 of 1 mm to 10 mm (in detail, a thickness T3 of 3 mm to 5 mm), but the thickness of the hollow portion 440 is not limited thereto and may be adjusted according to the thickness of the first plate 410 and the second plate 420. When the thickness T3 of the hollow portion 440 is less than 1 mm, the first plate 410 and the second plate 420 may be in close contact with each other, thereby reducing the thermal efficiency improvement effect of the hollow portion 440. When the thickness T3 of the hollow portion T3 is greater than 10 mm, the thermal efficiency improvement effect may not be significant, and the narrow internal space of the process chamber 100 may be limited to restrict the path of an automatic robot arm for loading or unloading the wafer W into or from the process chamber 100 .

[0036] In the following, reference will be made to Figure 4A and Figure 4B A heat reflectivity improving effect of the reflective member according to example embodiments will be described. Figure 4A and Figure 4B A comparison between the thermal reflectivity of a reflective member according to example embodiments and the thermal reflectivity of a reflective member according to a comparative example is shown.

[0037] The reflective member 400 reflects the heat radiated from the wafer W to compensate for the heat lost in the wafer W. Therefore, when the reflective member 400 is disposed inside the process chamber 100, the distance from the heating part 300 and the wafer W used as a heat source can be reduced to improve the thermal reflectivity. However, when the reflective member 400 is disposed inside the process chamber 100, a material layer such as a thin film TF is formed on the surface of the reflective member 400 during deposition, so that the thermal reflectivity on the surface of the reflective member 400 is reduced. When the deposition process is performed in the process chamber 100, the thermal reflectivity is further reduced. The reflective member 400 is formed of a highly reflective material to have a high thermal reflectivity on its surface. The thermal reflectivity of the thin film TF formed on the surface of the reflective member 400 is lower than the thermal reflectivity of the reflective member 400. Therefore, even when the reflective member 400 is disposed inside the process chamber 100, the actual thermal reflectivity of the reflective member 400 is relatively reduced due to the thin film TF formed on the surface of the reflective member 400.

[0038] exist Figure 4A and Figure 4B In the figure, reference symbol T H express Figure 2 The high temperature zone in the direction of the heating unit 300 is marked with a reference numeral T L represents the low temperature area. Therefore, the heat has a H to T L flow.

[0039] Reference Figure 2 and Figure 4A In the exemplary embodiment, part H3 of the heat H2 emitted from the heating part 300 to the first outer surface 410A of the reflective member 400 is reflected on the thin film TF formed on the surface of the reflective member 400, and the remaining heat H4 is absorbed by the thin film. Therefore, the heat H2 is conducted into the reflective member 400. When the thin film TF is formed on the surface of the reflective member 400, the heat reflectivity on the surface of the reflective member 400 is reduced compared to the heat reflectivity when the thin film TF is not formed. In addition, heat absorption can be increased to increase the heat H4 conducted into the reflective member 400.

[0040] In an example embodiment, a hollow portion 440 may be formed in the reflective member 400 to compensate for the reduced thermal reflectivity. For example, since the hollow portion 440 in the reflective member 400 is sealed and the thin film TF is not formed on the surface of the hollow portion 440, the high reflectivity of the first inner surface 410B, the second inner surface 420B, and the inner side surface 430B may be maintained respectively. Therefore, after the heat is conducted into the reflective member 400, a portion H9 may be absorbed, and a portion H6 of the radiated heat H5 that is emitted from the first inner surface 410B in the direction of the second inner surface 420B is reflected from the second inner surface 420B in the direction of the first inner surface 410B and then conducted toward the first outer surface 410A. The conducted heat H7 is radiated through the first outer surface 410A in the direction in which the substrate loading area 210 is provided. Therefore, compared with the case in which the hollow portion 440 is not present, this embodiment has the effect of further reflecting the heat to the substrate loading area 210 through H8. As a result of the experiment, it was found that when the radiated heat H5 was about 50% of H2, H8 corresponded to about 20% of H2. Therefore, it was confirmed that the heat reflectivity of the reflective member 400 was improved from 50% to 70%.

[0041] Meanwhile, in which a hollow portion is not formed in the reflective member R Figure 4B In the comparative example of FIG. 1 , part H11 of the heat H2 emitted from the heating portion toward the first outer surface RA of the reflecting member R is reflected on the thin film TF formed on the surface of the first outer surface RA, and absorbs the other heat H12 to be conducted into the reflecting member R. The conducted heat H12 is emitted as radiated heat H13 through the second outer surface RB of the reflecting member R. Therefore, in this exemplary embodiment, it is confirmed that since the heat corresponding to H8 is emitted in the direction of the second outer surface RB, less heat is reflected through H8 than in the exemplary embodiment.

[0042] In the following, reference will be made to Figures 5 to 11 Various example embodiments of the reflective member are described below.

[0043] Reference Figure 5 , and the above reference Figure 3C Compared to the example embodiment described above, the example embodiment is a case where the hollow portion 1440 has a first inner surface 1410B on which the second reflective layer 1450B is formed and a second inner surface 1420B on which the third reflective layer 1450C is formed. The third reflective layer 1450C may be formed of a material similar to that of the first reflective layer 1450A. In this example embodiment, the first reflective layer 1450A and the third reflective layer 1450C may be formed by coating at least one of quartz, ceramic, and metal. According to some example embodiments, the third reflective layer 1450C may be formed by coating a material such as The first reflective layer 1450A and the third reflective layer 1450C are formed of quartz (Heraus black quartz).

[0044] In the example embodiment, part H13 of the heat H12 radiated to the first outer surface 1410A is reflected from the first reflective layer 1450A, and part H14 of the heat H12 is conducted to the reflective member 1400, which is the same as described in the above embodiment. However, since part H16 of the heat H15 is reflected in the direction of the first inner surface 1410B by the third reflective layer 1450C (a highly reflective material layer coated on the second inner surface 1420B), the conducted heat H17 can be reduced, and the heat H18 reflected to the substrate loading area can be further increased.

[0045] In addition, a second reflective layer 1450B (low reflective material layer) having high heat absorption can be coated on the first inner surface 1410B to reduce the amount of heat H19 re-reflected from the first inner surface 1410B in the direction of the second inner surface 1420B. Therefore, the amount of heat H18 reflected to the substrate loading area can be further increased.

[0046] Reference Figure 6 , an exemplary embodiment is a case where a groove portion 2440 is formed in an outer side surface 2430A of a side wall portion 2430 of a reflective member 2400. When a projection corresponding to the groove portion 2440 is formed on a bracket for supporting the reflective member 2400, the groove portion 2440 may be slidably coupled to the projection. Therefore, the reflective member 2400 may be easily removed.

[0047] Reference Fig. 7A and Figure 7B , the exemplary embodiment is a case where the arrangement of the hollow portion is changed so that the distribution of heat reflected from the reflective member 3400 is adjusted to be changed.

[0048] The exemplary embodiment is a case where the heat absorbing member 3450 is disposed in the first area AR1 of the reflective member 3400 corresponding to the central area W1 of the wafer W, so that the hollow portion 3440 is restrictedly disposed only in the second area AR2 corresponding to the circumferential area W2 of the wafer W. Since the hollow portion 3440 is disposed in the second area AR2, the heat reflectivity of the second area AR2 can be further improved compared to the heat reflectivity of the first area AR1 to reflect more heat to the circumferential area W2 of the wafer W. Therefore, the temperature distribution of the wafer W can be adjusted as desired by adjusting the area in which the hollow portion 3440 is disposed in the reflective member 3400. For example, when the temperature of the central area W1 of the wafer W is higher than the temperature of the circumferential area W2 of the wafer W, the hollow portion 3440 is disposed only in the second area AR2 of the reflective member 3400 to achieve uniform temperature distribution of the wafer W. In addition, when the heating portion is disposed on the side surface of the process chamber and the reflective member is applied to a batch-type substrate processing device in which the temperature of the circumferential region of the wafer is higher than the temperature of the central region of the wafer, the hollow portion can be disposed only in the central region of the reflective member to achieve uniform temperature distribution of the wafer.

[0049] Figure 7C Shows Figure 7B The hollow portion 3440 is divided into a plurality of separate regions. The hollow portion 3440' is provided in a region of the reflective member 3400' corresponding to the circumferential region of the wafer, which is similar to Figure 7B However, the hollow portion 3440' is divided into separation areas 3440a, 3440b and 3440c. In this embodiment, a plurality of separation areas 3440a, 3440b and 3440c are provided in a portion of the circumferential area of ​​the wafer where a relatively increased temperature is desired.

[0050] Reference Figure 8 , an exemplary embodiment is a case where the hollow portion 4440 has a plurality of separation zones 4441 in the reflective member 4400 and the separation zones 4441 are stacked in the thickness direction of the reflective member 4400. In this case, a plurality of reflective members each having a hollow portion may be replaced with one reflective member. The sizes of the plurality of separation zones 4441 may be equal to each other, but in some embodiments, the sizes of some of the separation zones 4441 may be different from each other. At least one of metal, ceramic, and quartz (highly reflective material) may be selectively coated only in some of the separation zones 4441.

[0051] Reference Fig.9A and Fig. 9B , an exemplary embodiment is a case where a plurality of sub-reflective members 5430 are further disposed in one hollow portion 5440 of the reflective member 5400 .

[0052] In this embodiment, a plurality of sub-reflective members 5430 are spaced apart at regular intervals and coupled to a bracket 5420 formed in a hollow portion 5440. A plurality of sub-reflective members 5430 may be disposed in the hollow portion 5440 so as to be stacked in the thickness direction D2 of the reflective member 5400. When a sub-reflective member 5430 is also disposed in the hollow portion 5440, the heat reflection efficiency of the region in which the sub-reflective member 5430 is disposed may be further improved. The sub-reflective member 5430 may be formed of the same material as that of the reflective member 5400. However, in some embodiments, the sub-reflective member 5430 may be formed of a material different from that of the reflective member 5400. In addition, 7A to 7C Similar to the description of the embodiment, the shape of the sub-reflective member 5430 can be adjusted to adjust the temperature distribution of the wafer.

[0053] Reference Fig.10 , the exemplary embodiment is an example in which the shape of the inner surface of the hollow portion 6440 of the reflective member 6400 is modified. Although the first inner surface and the second inner surface defining the hollow portion are flat in the above-described embodiment, the first inner surface 6410B and the second inner surface 6420B are surfaces that are recessed in the direction of the first outer surface 6410A and the second outer surface 6420A, respectively, in this embodiment. Therefore, the thickness T5 of the central area of ​​each of the first plate 6410 and the second plate 6420 is smaller than the thickness T6 of the circumferential area thereof, so that the heat reflectivity of the central area of ​​the reflective member 6400 can be adjusted to be higher than the heat reflectivity of the circumferential area of ​​the reflective member 6400. Although the first inner surface 64140B and the second inner surface 6420B of the reflective member 6400 are formed as concave surfaces in this embodiment, they may be formed to have convex surfaces in some embodiments. Alternatively, only one of the first inner surface 6410B and the second inner surface 6420B may be formed to have a concave or convex surface, or the first inner surface 6410B and the second inner surface 6420B may be formed to have different shapes. 7A to 7C Similar to the description of the embodiment, the temperature distribution of the wafer can be adjusted.

[0054] Reference Fig.11 , the exemplary embodiment is an example in which the shape of the outer surface of the reflective member 7400 is modified. In this embodiment, the second outer surface 7420A is formed as a concave surface so that the thickness T8 of the circumferential area of ​​the second plate 7420 is greater than the thickness T7 of the central area of ​​the second plate 7420. Therefore, the thickness T7 of the central area of ​​the second plate 7420 is less than the thickness T8 of the circumferential area, so that the thermal reflectivity of the central area can be adjusted to be higher than the thermal reflectivity of the circumferential area. As a result, the surface shape of the outer surface of the reflective member 7400 can be modified without changing the shape of the hollow portion 7440 to have an effect similar to the case in which the shape of the hollow portion 7440 is modified.

[0055] Figures 12 to 17 A substrate processing apparatus according to an example embodiment is shown.

[0056] Reference Fig.12 , the exemplary embodiment is a case where the arrangement of the heating part and the reflecting member of the substrate processing device 20 is modified. In this exemplary embodiment, compared with the above-mentioned embodiment, the reflecting member 20400 is not arranged in the inner space 20120 defined by the outer wall 20110 and has the same shape. Unlike the above-mentioned exemplary embodiment, the reflecting member 20400 of the substrate processing device 20 is arranged in the lower space 20220 of the supporting part 20200. In addition, unlike the above-mentioned embodiment, the heating part includes a first heating part 20300A and a second heating part 20300B, the first heating part 20300A is arranged above the wafer W, and the second heating part 20300B is arranged between the reflecting member 20400 and the wafer W. In some embodiments, only one of the first heating part 20300A and the second heating part 20300B may be arranged.

[0057] Reference Fig.13 , the exemplary embodiment is a case where the support portion 30200 and the reflective member 30400 of the substrate processing apparatus 30 are integrally formed in the inner space 30120 defined by the outer wall 30110. In addition, the heating portion 30300 is embedded in the support portion 30200. The reflective member 30400 is disposed below the wafer W, the heating portion 30300 is disposed in the lower portion of the substrate loading area on which the wafer W is placed, and the hollow portion 30440 is disposed at the lower portion of the heating portion 30300, which is similar to the configuration of the substrate processing apparatus 20 according to the exemplary embodiment described above.

[0058] Reference Fig.14 , the exemplary embodiment is a case where the support portion 40200 and the heating portion 40300 of the substrate processing device 40 are integrally formed and the reflective member 40400 is separated therefrom. The reflective member 40400 is disposed in the inner space 40120 defined by the outer wall 40110, which is similar to the above-described embodiment. In this embodiment, the reflective member 40400 is disposed below the wafer W, which is similar to the configuration of the above-described substrate processing device 30 according to the exemplary embodiment. However, the reflective member 40400 is separated from the support portion 40200, which is different from the configuration of the substrate processing device 30 according to the above-described exemplary embodiment.

[0059] Reference Fig.15, the exemplary embodiment is a case where the reflective member 50400 of the substrate processing apparatus 50 is disposed above the shower head 50500. The shower head 50500 is configured to uniformly inject the process gas into the surface of the wafer W at the upper portion of the wafer W. The reflective member 50400 is disposed in the inner space 50120 defined by the outer wall 50110, which is similar to the above-described embodiment. In this embodiment, the reflective member 50400 may be disposed at the upper portion of the shower head 50500 to reflect heat in the direction in which the wafer W is disposed without hindering the flow of the process gas injected into the wafer W.

[0060] Reference Fig.16 In the example embodiment, the support part 60200 and the heating part 60300 of the substrate processing device 60 are integrally formed and the reflective member 60400 is separated therefrom, which is similar to the configuration of the above-mentioned substrate processing device 40 according to the example embodiment. However, the reflective member 60400 is provided on the side surface of the support part 60200, which is different from the configuration of the above-mentioned substrate processing device 40 according to the example embodiment. In addition, the reflective member 60400 is provided in the inner space 60120 defined by the outer wall 60110, which is similar to the configuration of the substrate processing device 40 according to the example embodiment described above. The reflective member 60400 may be provided around the support part 60200 in the form of a ring. Therefore, even when it is difficult to arrange the reflective member 60400 above the wafer W, heat can be effectively reflected. And even when the heat dissipated in the direction of the side surface of the wafer W is more than the heat dissipated upward, the heat can be effectively reflected.

[0061] Reference Fig.17 , the substrate processing apparatus 70 according to the example embodiment is a batch type substrate processing apparatus to which the above-described reflection member according to the example embodiment is applied.

[0062] The substrate processing apparatus 70 may include: a reaction tube 70200 extending in a vertical direction and accommodating a substrate; and a heating device disposed to surround the reaction tube 70200 and configured to heat the reaction tube 70200. The heating device may include: a side wall insulation material 70100 installed outside the reaction tube 70200 having a cylindrical shape; and a heating portion 70110 such as a heater disposed inside the side wall insulation material 70100. The heating device may further include an upper wall insulation material 70120 covering an upper portion of the side wall insulation material 70100.

[0063] The heating device may include a vertical furnace. A reaction tube 70200 having a concentric shape with the sidewall insulation material 70100 may be disposed in the inner space 70101 of the sidewall insulation material 70100. The reaction tube 70200 may extend in the vertical direction to define a process chamber. The reaction tube 70200 may receive a boat 70230 on which a plurality of wafers W are loaded. The boat 70230 is a support member provided to provide a substrate loading area loaded with a plurality of wafers W.

[0064] The side wall insulation material 70100 may be supported by the heater base 70160 to be installed vertically. The reaction tube 70200 may be disposed inside the side wall insulation material 70100 having a cylindrical shape. The side wall insulation material 70100 may have a multilayer structure. The side wall insulation material 70100 may include a side wall inner layer 70102 and a side wall outer layer 70104. A cylindrical space 70106 may be formed between the side wall inner layer 70102 and the side wall outer layer 70104 as a cooling gas channel. A heating portion 70110 such as a heater may be installed on the inside of the side wall insulation material 70100.

[0065] A cooling gas supply port may be formed on an upper portion of the sidewall outer layer 70104, and a plurality of supply holes 70103 may be formed in the sidewall inner layer 70102. The supply holes 70103 may be formed at a predetermined position from the lower layer portion to the upper layer portion of the sidewall inner layer 70102 to diffuse the cooling gas widely throughout the internal space 70101. The reaction tube 70200 may include an outer tube 70210 and an inner tube 70220 installed in the outer tube 70210. A process chamber may be formed in the inner tube 70220, and may accommodate a plurality of wafers W, which are stacked on a plurality of steps in a vertical direction by a boat 70230 and aligned in a horizontal direction. The outer tube 70210 may have a cylindrical shape with a closed upper end and an open lower end, and the inner tube 70220 may have a cylindrical shape with an open upper end and a lower end. The outer tube 70210 may be arranged concentrically with the inner tube 70220. When a plurality of wafers W are mounted on the boat 70230, the boat 70230 may be elevated by the lifting device 70270 to be loaded into the process chamber. In this state, the door plate 70260 may seal the lower end of the manifold 70240 by a sealing member such as an O-ring.

[0066] In an exemplary embodiment, the structure is similar to that described above. Figure 1 A reflective member 70400A having a structure similar to that of the reflective member 400 of the embodiment of the present invention may be disposed on the uppermost portion of the boat 70230 on which the plurality of wafers W are mounted. Figure 8 The reflective member 4400 or the above Fig. 9BA reflective member 704400B having a structure similar to that of the reflective member 5400 may be formed on the lowermost portion of the boat 70230 on which a plurality of wafers W are mounted. Additionally, a Figure 7B The reflective member 3400 or Figure 7C The reflective member 3400 ′ makes the heat reflectivity of the central area of ​​each of the plurality of wafers W higher than the heat reflectivity of the circumferential area thereof to uniformly adjust the temperature distribution of the plurality of wafers W.

[0067] In the following, reference will be made to 18A to 18C A method of manufacturing a reflective member according to example embodiments will be described. 18A to 18C Shows the manufacturing Figure 1 The method of the reflective member 400. FIG. 18A to FIG. 18B A manufacturing process of a reflective member according to example embodiments will be described. 18A to 18C It is used to explain Figure 1 FIG. 4 is a diagram of a manufacturing process of a reflective member 400. In the exemplary embodiment, the first plate and the side wall of the reflector are integrally formed. In the exemplary embodiment, the case where the first plate and the side wall portion of the reaction part are integrally formed will be described as an example.

[0068] Reference Fig.18A , a base material substrate Q1 is prepared. The base material substrate Q1 may be formed of quartz. In detail, the base material substrate Q1 may be formed of various types of transparent quartz, white quartz, and black quartz such as CFQ, OM100, OP3, Heraus reflective coating (HRC), and Heraus black quartz (HBQ).

[0069] Reference Fig.18B , a groove portion 440A may be formed on the top surface of the base material substrate Q1. The groove portion 440A may be formed by various physical or chemical etching methods. The groove portion 440A is a space in which a hollow portion is formed when the cover plate Q2 is assembled in a subsequent process. In some embodiments, a material layer may be formed on the bottom surface of the groove portion 440A by coating a low-reflectivity material having high absorbency or a high-reflectivity material such as metal, ceramic, and quartz.

[0070] Reference Fig.18C , the hollow portion 440 can be formed by bonding the cover Q2 to the base material substrate Q1. The cover Q2 can be formed of the same material as the base material substrate Q1. For example, the cover Q2 can be formed of quartz. The cover Q2 can be formed by using a material such as SiO 2The cover plate Q2 is bonded to the base material substrate Q1 by welding of the material. After the cover plate Q2 is bonded to the base material substrate Q1, a through hole communicating with the hollow portion 440 is formed in at least one region of the cover plate Q2 and the base material substrate Q1, and air is exhausted from the hollow portion 440 through the through hole, so that the hollow portion 440 can be maintained in a vacuum state. In some embodiments, the hollow portion 440 can have a pressure of about 10Pa. The hollow portion 440 can be filled with air or a desired (or alternatively, predetermined) gas.

[0071] As described above, a substrate processing apparatus according to example embodiments may improve a heat insulation effect to prevent energy loss during substrate processing, and may mitigate a heat distribution difference of a substrate to ensure temperature uniformity.

[0072] While example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the inventive concept as defined in the appended claims.

Claims

1. A substrate processing device, comprising: Process chamber; a support portion located in the process chamber, the support portion including a substrate loading area configured to support a substrate placed in the substrate loading area; a heating portion configured to heat the substrate loading area; as well as a reflective member adjacent to the substrate loading area in the process chamber and configured to reflect heat radiated from the substrate loading area to the substrate, the reflective member having a sealed hollow portion located therein, the sealed hollow portion configured to improve heat reflection efficiency of the reflective member, wherein the reflective member includes a first inner surface, a second inner surface, and an inner side surface defining the sealed hollow portion, the first inner surface faces the substrate loading area, the second inner surface is opposite to the first inner surface, and the inner side surface connects the first inner surface and the second inner surface, The reflective member includes a reflective material having a first reflectivity, and at least one of the first inner surface and the second inner surface includes a material coated thereon having a second reflectivity higher than the first reflectivity.

2. The substrate processing apparatus according to claim 1, wherein: The reflective member comprises an outer surface, The outer surface includes a first outer surface, a second outer surface, and an outer side surface, the second outer surface is opposite to the first outer surface, and the outer side surface connects the first outer surface and the second outer surface.

3. The substrate processing apparatus according to claim 1, wherein: One of the first inner surface and the second inner surface includes a material having the second reflectivity coated thereon, The other of the first inner surface and the second inner surface includes a material coated thereon having a third reflectivity, the third reflectivity being lower than the first reflectivity.

4. The substrate processing apparatus according to claim 2, wherein: The first outer surface, the second outer surface, and the outer side surface each include a material coated thereon having a fourth reflectivity that is higher than the first reflectivity.

5. The substrate processing apparatus according to claim 1, wherein: The reflective member is adjacent to the substrate loading area so that the sealed hollow portion corresponds to a central area or a circumferential area of ​​the substrate.

6. The substrate processing apparatus according to claim 2, wherein: The second outer surface has a flat reflective surface.

7. The substrate processing apparatus according to claim 1, wherein: The reflective member includes a plurality of separate regions each having the sealed hollow portion therein, the plurality of separate regions being stacked in a thickness direction of the reflective member.

8. The substrate processing apparatus according to claim 7, wherein: At least one sub-reflective member is located in the sealed hollow portion.

9. The substrate processing apparatus according to claim 8, wherein: The sub-reflection member includes a plurality of sub-reflection members stacked in a thickness direction of the reflective member.

10. The substrate processing apparatus according to claim 1, wherein: At least one of the first inner surface and the second inner surface has a flat surface.

11. The substrate processing apparatus according to claim 2, wherein: At least one of the first outer surface and the second outer surface has a convex surface or a concave surface, and the convex surface or the concave surface faces the substrate loading area.

12. A substrate processing device comprising: Process chamber; a support portion located in the process chamber, the support portion including a substrate loading area configured to support a substrate placed in the substrate loading area; a heating portion configured to heat the substrate loading area; as well as a reflective member adjacent to the substrate loading area in the process chamber, the reflective member having a sealed hollow portion therein, the reflective member being configured to reflect heat radiated from the substrate loading area to the reflective member, the sealed hollow portion being configured to improve heat reflection efficiency of the reflective member, the reflective member comprising at least one of quartz, ceramic and metal, wherein The reflecting member is disc-shaped and has a diameter of 280 mm to 320 mm and a thickness of 10 mm to 20 mm, and the sealed hollow portion in the reflecting member has a thickness of 3 mm to 5 mm, wherein the reflective member includes a first inner surface, a second inner surface, and an inner side surface defining the sealed hollow portion, the first inner surface faces the substrate loading area, the second inner surface is opposite to the first inner surface, and the inner side surface connects the first inner surface and the second inner surface, The reflective member includes a reflective material having a first reflectivity, and at least one of the first inner surface and the second inner surface includes a material coated thereon having a second reflectivity higher than the first reflectivity.

13. The substrate processing apparatus according to claim 12, wherein: The heating portion is located on a side surface of the substrate loading area.

14. The substrate processing apparatus according to claim 13, wherein: The reflective member is adjacent to the substrate loading area so that the sealed hollow portion corresponds to a central area of ​​the substrate.

15. The substrate processing apparatus according to claim 12, wherein: The reflective member is located above the substrate loading area, and The heating portion is located below the substrate loading area.

16. The substrate processing apparatus according to claim 12, wherein: The reflective member is located below the substrate loading area, and The heating portion is at least one of located above the substrate loading area and located below the substrate loading area.

17. The substrate processing apparatus according to claim 12, wherein: The reflective member is at least one of located above the substrate loading area and located below the substrate loading area, and The heating portion is located on a side surface of the substrate loading area.

18. The substrate processing apparatus according to claim 13, wherein: The reflective member comprises: a base having a groove portion; and A cover plate is coupled to the base body, the cover plate covering the groove portion to form the sealed hollow portion.

19. A substrate processing device comprising: Process chamber; as well as A support portion, which is located in the process chamber, the support portion includes a substrate loading area, the substrate loading area is configured to support a substrate placed in the substrate loading area, and the support portion includes: a heating portion located below the substrate loading area, and a hollow portion located below the heating portion, the hollow portion being defined by at least three inner surfaces of a reflective member, the at least three inner surfaces comprising a first inner surface facing the substrate loading area, a second inner surface opposite to the first inner surface, and an inner side surface connecting the first inner surface and the second inner surface, the hollow portion being configured to improve heat reflection efficiency of reflecting heat emitted from the substrate loading area, The reflective member includes a reflective material having a first reflectivity, and at least one of the first inner surface and the second inner surface includes a material coated thereon having a second reflectivity higher than the first reflectivity.

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