Submodule comprising a direct and alternating voltage terminal and arrangement comprising the submodule

Abstract

A sub-module comprising direct and alternating voltage terminals and an arrangement comprising the sub-module are presented herein, the sub-module comprising: a switching device comprising a substrate having first and second direct voltage conductor tracks having first and second direct voltage connection areas arranged thereon, wherein the direct voltage connection areas are preferably arranged directly adjacent to each other, and the substrate further comprises an alternating voltage conductor track and an alternating voltage connection area thereon; and the switching device comprises a plurality of power semiconductor components; and the switching device comprises an internal connection device, wherein the first and second direct voltage connection areas and also the alternating voltage connection area are configured and arranged to be directly, polarity-correctly and electrically conductively connected to external direct and alternating voltage connection elements not associated with the sub-module by clamping means, whereby the substrate is simultaneously pressed onto a support device in the section of the direct voltage connection areas and also the alternating voltage connection area.

Description

TECHNICAL FIELD

[0001] A power electronic sub-module is described, comprising a switching device with a substrate having a first DC potential conductor track, a second DC potential conductor track and also an AC potential conductor track; and the switching device comprises a plurality of power semiconductor components; and the switching device comprises an internal connection device. An arrangement is also described, comprising such a sub-module or a plurality of such sub-modules; and a support device for such a sub-module, which can in particular be configured as a cooling device. BACKGROUND

[0002] DE 10 2017 115 883 A1 discloses as prior art a sub-module and an arrangement comprising the sub-module, wherein the sub-module has a switching device comprising a substrate and conductor tracks arranged on the substrate. The sub-module has a first DC voltage conductor track and a second DC voltage conductor track and a first DC voltage terminal element and a second DC voltage terminal element in electrically conductive connection with the first and second DC voltage conductor tracks, and also an AC potential conductor track and an AC potential terminal element in electrically conductive connection with the AC potential conductor track. The sub-module also has an insulating material molding which encloses the switching device in a frame-like manner. In this case, the first DC voltage terminal element is supported on a first support body of the insulating material molding by means of a first contact section; the AC potential terminal element is supported on a second support body of the insulating material molding by means of a second contact section. A first clamping device is configured to extend through a first cutout of the first support body in an electrically insulating manner and to form an electrically conductive clamping connection between the first DC voltage terminal element and a first DC voltage connection element assigned thereto, and a second clamping device is configured to extend through a second cutout of the second support body in an electrically insulating manner and to form an electrically conductive clamping connection between the AC potential terminal element and an AC potential connection element assigned thereto.

[0003] With the knowledge of the prior art mentioned, the invention is based on the object of proposing a power electronic sub-module and an arrangement comprising the power electronic sub-module, wherein it is particularly advantageous to configure the respective connections to the direct current potential connection elements and to the alternating current potential connection elements. SUMMARY

[0004] According to the invention, this object is achieved by a power electronic sub-module comprising a switching device comprising a substrate having a first direct current potential conductor track, wherein a first direct current potential connection region is arranged on the first direct current potential conductor track, and a second direct current potential conductor track, wherein a second direct current potential connection region is arranged on the second direct current potential conductor track, wherein the direct current potential connection regions are preferably arranged directly adjacent to one another, and the substrate further comprises an alternating current potential conductor track and an alternating current potential connection region on the alternating current potential conductor track; and the switching device comprises a plurality of power semiconductor assemblies; and the switching device comprises an internal connection device, wherein the first and the second direct current potential connection regions and also the alternating current potential connection region are configured and arranged to be directly and in polarity-correctly and electrically conductively connected by a clamping device to external direct current potential connection elements and alternating current potential connection elements not associated with the sub-module, whereby the substrate is simultaneously pressed onto a support device in the section of the direct current potential connection regions and also of the alternating current potential connection region.

[0005] It is particularly advantageous if an insulating material form encloses the switching device at least partially in a frame-like manner.

[0006] Preferably, the substrate has an insulating material body or an insulating material layer, on which the first and the second direct current potential conductor track and also the alternating current potential conductor track are arranged in a material-bonded manner. In this case, it is preferred that the insulating material body or the insulating material layer is arranged in a material-bonded manner on a metal body or a metal layer. Thus, an at least three-layered substrate with a central insulating layer is formed.

[0007] Preferably, the internal connection device can be configured as a bond connection, in particular as a wire bond connection, or as a film stack, which in different cases consists of one or more electrically insulating and electrically conductive films which are at least partially inherently structured and arranged alternately.

[0008] Preferably, the substrate has a first continuous cutout, wherein the alternating current potential connection region is arranged adjacent to the first cutout or in a manner enclosing the first cutout.

[0009] It is particularly preferred that the substrate has a second continuous cutout, wherein the first and the second direct current potential connection region are arranged adjacent to the second cutout or the second cutout is arranged between the first and the second direct current potential connection region.

[0010] It is advantageous that the sub-module has a pressure device with pressure elements having dimensionally stable pressure bodies and a plurality of rigid or elastic pressure elements. Rigid pressure elements are particularly suitable for directly guiding pressure onto the substrate, while elastic pressure elements are particularly suitable for guiding pressure onto the semiconductor assembly. To this end, it can be advantageous that the substrate has a third continuous cutout arranged centrally in alignment with the cutouts of the pressure device, wherein the cutouts are configured and arranged such that pressure introduction elements extend through the cutouts and press the substrate onto the support device by means of the pressure device. In this case, it is particularly preferred that the first, the second and the third cutout are arranged on a line, which preferably defines a mirror axis of the substrate.

[0011] Furthermore, the object is also achieved by an arrangement having the above-mentioned power electronics sub-module and a support device, which is particularly configured as a cooling device. In this case, a first clamping device and a second clamping device are each anchored in the support device, wherein an electrically conductive force-locked connection is formed between the alternating current potential connection region and the alternating current potential connection element by means of the first clamping device, and wherein an electrically conductive force-locked connection is formed between the first direct current potential connection region and the first direct current potential connection element and simultaneously between the second direct current potential connection region and the second direct current potential connection element by means of the second clamping device. It is thus important that the respective connection region for the external terminal is an integral part of the substrate, wherein the power semiconductor assembly is also arranged on the substrate.

[0012] It is particularly preferred that the respective clamping device is configured as a clamping element, preferably as a screw, and as a clamping counter-element of the support device, preferably as a cutout or a blind hole having an internal thread.

[0013] Furthermore, it is preferred that the respective clamping device has an insulating material sleeve through which the clamping element extends. As an alternative to the above, the clamping element can itself be configured in an electrically insulating manner, for example as a plastic screw.

[0014] Furthermore, it can be advantageous that a plurality of sub-modules form a power module, preferably together with a common overall housing.

[0015] Of course, features mentioned in the singular, in particular the respective connection regions and clamping devices, can also be present in a plurality in the sub-modules according to the application or in the arrangements comprising said sub-modules, unless they are excluded or explicitly excluded by themselves.

[0016] Needless to say, the various configurations of the application can be realized individually or in any desired combination in order to achieve improvements. In particular, the features mentioned and explained above and below, whether described in the context of the sub-modules or in the arrangements comprising the same, can be used not only in the indicated combinations but also in other combinations or on their own, without departing from the scope of the application. BRIEF DESCRIPTION OF DRAWINGS

[0017] Further explanations, advantageous details and features of the application are apparent from the following description of exemplary embodiments of the application or of corresponding parts thereof, as schematically shown in Figures 1 to 9 the drawings.

[0018] Figure 1 A power electronic sub-module in an arrangement according to the prior art is shown.

[0019] Figure 2 A plan view of a sub-module according to the application is shown.

[0020] Figures 3 to 6 Each shows a side sectional view of a variant of a power electronic sub-module according to the application partially in an arrangement according to the application.

[0021] Figure 7 A plan view of a further sub-module according to the application is shown.

[0022] Figure 8 A three-dimensional view of a power electronic sub-module according to the application is shown.

[0023] Figure 9 A plan view of a sub-module for a multi-level converter according to the application is shown. DETAILED DESCRIPTION

[0024] Figure 1 A side sectional view of a configuration of a part of an arrangement 1 according to the prior art is shown, which comprises a power electronic sub-module 2 according to the prior art as well. In this case, the sub-module 2 is arranged on a liquid cooling device 3. This overall arrangement 1 forms a so-called half-bridge circuit.

[0025] For galvanic insulation with respect to the liquid cooling device 3 and for thermal coupling with the liquid cooling device 3, the switchgear has a base plate 4, which has a body of insulating material 40, which is configured as a ceramic body. The ceramic body 40 has a plurality of conductor tracks 42 on its side facing away from the liquid cooling device 3, which have different electrical potentials during operation of the switchgear.

[0026] On at least one of the conductor tracks 42 forming the base plate 4 of the switchgear together with the body of insulating material 40, a power semiconductor assembly 50 is arranged and connected in a circuit-conforming manner by means of the conventional practice in the art. The internal connection means here are configured as a film composite 52, which consists of an alternating stack of electrically conductive films and electrically insulating films, which are conventional in the prior art.

[0027] For external connection, the inverter module 2 has two DC potential terminal elements 680, 682, which are electrically conductively connected to one of the DC potential conductor tracks 42 carrying a DC potential, respectively. Here, without limiting the generality, the connection is configured as a solder connection in a manner conventional in the art.

[0028] The DC potential terminal elements 680, 682 are intended for connection to the associated DC potential connection elements 60, 62, which are preferably connected to a capacitor device.

[0029] In the region of the connection formed by the clamping device 7 between the DC potential terminal elements 680, 682 and the DC potential connection elements 60, 62, the first DC potential terminal element 680 and the second DC potential terminal element 682 form a stack, in which an insulating device is arranged between the two DC potential terminal elements 680, 682, but is not explicitly shown here.

[0030] The first DC potential terminal element 680 is supported on a support surface 240 of the housing 20 of the inverter module 2, which is only partially shown. In this configuration, the housing 20 is configured only as a partial housing, that is to say, it does not completely enclose the switchgear, which is possible and also conventional practice in the art.

[0031] Here, the housing 20 of the converter module 2 is formed from a high-temperature-resistant plastic, here polyphenylene sulfide, which additionally has a high bending stiffness. The DC potential terminal elements 680, 682 are configured as thin metal plates, here more precisely copper plates or surface-coated copper plates, with a thickness of 700 pm. The insulation between the DC potential terminal elements 680, 682 is formed from a plastic with a high electrical breakdown strength, here from an ethylene tetrafluoroethylene copolymer or from a liquid-crystal polymer, with a thickness of 100 pm.

[0032] As described above, in the region of the connection between the DC potential terminal elements 680, 682 and the DC potential connection elements 60, 62, the first DC potential terminal element 680 is supported on the support surface 240 of the housing 20 and has a cutout 684.

[0033] The second DC potential terminal element 682 is arranged behind the first DC potential terminal element, whereby, in a side view from the base plate, the terminal region of the second DC potential terminal element with respect to the second DC potential connection element 62 lies on the side of the cutout 684.

[0034] The respective terminal region of the DC potential terminal elements 680, 682 lies on the side facing away from the cooling device 3, while the respective terminal region of the DC potential connection elements 60, 62 each lies on the side facing towards the cooling element 3.

[0035] The housing 20 has a first cutout 204 in the region of the first support surface 240 thereof, which is aligned in the z direction with the cutout 684 of the first DC potential terminal element 680. In these and other cutouts 684, 620 aligned therewith, including the cutout of the AC potential connection element 62, an insulation material sleeve 74 is arranged, which serves for electrical insulation of the respective potential, including air gaps and possibly required creepage paths. In the sleeve 74, a screw 70 is arranged, which, together with a spring device 72 embodied here as a disc spring, forms an electrically conductive force-locked connection between the first DC potential terminal element 680 and the first DC potential connection element 60 and at the same time also between the second DC potential terminal element 682 and the second DC potential connection element 62. To this end, the screw 70 is screwed into a blind hole 32, that is to say into a cutout of the cooling device 3, which is provided with an internal thread, whereby the first clamping device 7 is anchored in the cooling device.

[0036] Figure 2A plan view of a sub-module 2 according to the application is shown. The drawing shows a body of insulating material 40 of the base plate 4, which here is a planar ceramic body, which is preferably and only exemplarily formed of aluminium nitrite. Aluminium oxide or silicon nitrite are also very suitable alternatives. Three conductor tracks 42, 43, 44 are arranged on the ceramic body 40 in a material-bonded manner - a first direct current potential conductor track 42, which carries a first, positive direct current potential during operation, a second direct current potential conductor track 43, which carries a second, negative direct current potential during operation, and an alternating current potential conductor track 44, which carries an alternating current potential during operation.

[0037] Four power semiconductor components 50, here silicon carbide field effect transistors, are arranged on the first direct current potential conductor track 42 and are electrically conductively connected thereto. The power semiconductor components 50 form a first power switch. Alternatively, the power switch can also be formed by silicon-based power semiconductor components, in which case it is formed, for example, by transistors with anti-parallel diodes. These power semiconductor components 50 are connected to the alternating current potential conductor track 43 by means of wire-bond connections 54, which form internal connection means. In turn, four power semiconductor components 52 of the same type are arranged on the alternating current potential conductor track and are electrically conductively connected thereto. These power semiconductor components 52 are likewise connected to the second direct current potential conductor track 44 by means of wire-bond connections 54. Here and in the following, the illustration of control conductor tracks for carrying control potentials and connections to the power semiconductor components is omitted for the sake of clarity. Overall, a half-bridge circuit of the type conventional in the art is thus formed.

[0038] At the first longitudinal end of the base plate 2, an alternating current potential connection region 436 is arranged on the alternating current potential conductor track 43. The first continuous cutout 400 extends through the alternating current potential connection region 436, the alternating current potential conductor track 43 and the body of insulating material 40.

[0039] Furthermore, respective terminal regions formed by sections of the surfaces of the conductor tracks are shown. A first direct current potential connection region 426 is arranged on the first direct current potential conductor track 42 at the second longitudinal end of the base plate 2. A second direct current potential connection region 446 is arranged directly adjacent to the first direct current potential connection region 426 on the second direct current potential conductor track 44 at the second longitudinal end of the base plate 4. A second cutout 402 extending through the body of insulating material 40 is arranged between these direct current potential connection regions 426, 446.

[0040] The first and second cutouts 400, 402 are arranged on an imaginary mirror line B of the base plate 4, more precisely of the body of insulating material 40 of the base plate 4.

[0041] Figures 3 to 6 A side sectional view is shown of a partial variant of the power electronics sub- module 2 according to the application in an arrangement according to the application, wherein the section lines each extend along the line A-A, similar to Figure 2 The similarity relates to the position of the conductor tracks, the position of the semiconductor assemblies and the position of the cut-outs; it does not necessarily have to relate to the technical construction of the substrate with regard to the material of the substrate and the construction of the substrate.

[0042] Figure 3 A part of the arrangement 1 according to the application is shown (partly in exploded view), wherein the substrate 4 here corresponds in terms of construction, including material, to the substrate according to Figure 2 . The substrate 4 is arranged on a liquid cooling device 3, which here forms the support device.

[0043] Again, the same power semiconductor assemblies 50 are arranged on the substrate 4 as described with regard to Figure 2 . However, the internal connection device here is not constructed as a wire bond connection, but as a film stack 52 which is connected to one another in a material bond. The film stack 52 is conventional in the prior art, here consisting of two conductive films, which can in addition be constructed in a structured manner, and an electrically insulating film arranged between the two conductive films.

[0044] On the side of the substrate 4 which faces away from the water cooling device 3, wherein the substrate is also supported on the water cooling device 3 in this region, an alternating voltage connection region 436 is arranged and constructed as a surface region of the alternating voltage conductor track 43. The entire substrate 4 has a first continuous cut-out 400 in this region. In addition, the arrangement has an alternating voltage connection element 60 which is not part of the sub-module 2. The alternating voltage connection element 60 serves for connection to an electric machine, typically an electric motor which is constructed to be driven by the sub-module 2. The alternating voltage connection element 60 has a continuous cut-out 600 which is aligned with the cut-out 400 of the substrate 4.

[0045] In a manner corresponding to and aligned with these two cut-outs 400, 600, a blind hole 32 with an internal thread is arranged in the water cooling device 3 and forms a clamping counter element of the clamping device 7.

[0046] The clamping element of the clamping device 7 is configured as a screw 70, which extends through a cutout of the AC potential connection element 600 and the base plate 400 into a blind hole 32. Due to this configuration and application of the clamping device 7, the terminal region 606 of the AC potential connection element 60 is pressed onto the AC potential connection region 436 and an electrically conductive contact is formed between the AC potential connection element 60 and the AC potential conductor track 43. An insulation material sleeve 74 is arranged in order to electrically insulate the metal screw 70 from the AC potential connection element 60 and also from the AC potential conductor track 43. In order to improve the introduction of pressure, a spring element is additionally arranged here between the screw head and the insulation material sleeve 74, which is configured as a disc spring 72, through which the screw 701 extends.

[0047] By means of the clamping device 7, the entire base plate 4 is pressed onto the liquid cooling device 3, whereby a thermal link is formed between the base plate 4 and the liquid cooling device 3. In the manner customary in the art, a thermally conductive layer, in particular a thermally conductive paste, can also be arranged between the base plate 4 and the liquid cooling device 3.

[0048] Figure 4 A configuration of the arrangement 1 according to the application is shown, which is similar to Figure 3 , but here the illustration of the support device has been omitted. However, the base plate 4 here is configured as a metal body 48, which is preferably composed of aluminum, an insulation material layer 41, which is arranged in a material-bonded manner on the metal body, which is configured here as an insulation material film, and a conductor track 43, which is then arranged in a material-bonded manner on the insulation material layer, which is preferably formed of aluminum or copper. All other components and functions are identical to those according to Figure 3 .

[0049] Figure 5 An arrangement 1 according to the application is shown, in which the base plate 4 of the sub-module 2 is configured according to Figure 3 . The power semiconductor components 50 and the internal connection device 52 are also identical here. The illustration additionally shows a DC potential connection element, here a first DC potential connection element 60, which carries a negative potential during operation.

[0050] The submount 2 here has a pressure device 9 which is essentially conventional in the art and which, in itself, has a pressure element 92 which consists of a dimensionally stable pressure body 920 and a plurality of elastic pressure elements 922. The pressure device 92 is subjected to pressure by means of a pressure introduction element 90. Without limiting the generality, pressure is here applied centrally to the pressure device 9. The pressure elements 922 of the pressure device 9 press onto the section of the connection device 52 which is aligned with the power semiconductor assembly 50. In order to make a force-locked connection, the substrate 4 is thus pressed onto the liquid cooling device 3 at those points where the most heat is generated.

[0051] The pressure is introduced by means of the pressure introduction element 90, which is achieved by means of two clamping devices 7, which in addition serve to make the corresponding force-locked connection of the alternating voltage conductor tracks 43 at the alternating voltage connection region 436 to the assigned terminal region of the alternating voltage connection element 60 and of the first direct voltage conductor tracks 42 at the first direct voltage connection region 426 to the assigned terminal region of the first direct voltage connection element 64. The corresponding connections are configured as already described above.

[0052] Figure 6 An arrangement 1 according to the application is shown, which comprises a liquid cooling device 3, a submount 2 according to the application arranged on the liquid cooling device, and an alternating voltage connection element 60 and a first direct voltage connection element 64.

[0053] The substrate 4 here consists of a ceramic insulating material body 40 and a metal layer 49, which is preferably formed from aluminum or copper, which is connected to the insulating material body 40 in a material bond on the side of the insulating material body which faces the liquid cooling device 3. On the side which faces away from the liquid cooling device 3, a plurality of conductor tracks 42, 43 are arranged in a material bond. The illustration again shows three power semiconductor assemblies 50, here silicon carbide field effect transistors on the alternating voltage conductor tracks 43. The alternating voltage conductor tracks 43 have a conductor track-associated lining 438 in the region of the alternating voltage terminal region 436 with respect to the alternating voltage connection element 60. The illustration also shows the first direct voltage conductor tracks 42 together with the first direct voltage connection region 426.

[0054] The illustration also shows a pressure device 9, which is essentially in accordance with the Figure 5The pressure device 9 is identical to the pressure device of the power electronics sub-module 2 according to the application, but has an expanded functionality. The pressure element 92 has an additional pressure body 922 which presses onto the side of the AC potential connection element 60 and also of the DC potential connection element 64 which faces away from the substrate 4. The pressure is introduced by the pressure introduction element 90 which not only exerts a central pressure on the pressure element 92, but also exerts a pressure on the respective connection regions 426, 436 of the conductor tracks in alignment with the associated connection elements.

[0055] The clamping device itself is not shown here and is not arranged directly adjacent to the respective connection regions shown.

[0056] Figure 7 A plan view of a further sub-module 2 according to the application is shown. The sub-module is essentially identical to the sub-module according to the application Figure 2 but does not have the wire bond connection 54 as an internal connection device. Rather, the substrate 4 has the film stack 52 which has already been described as an internal connection device. However, the film stack 52 is only shown in broken lines and in a transparent manner, thus only in an indicative manner. The illustration shows a third, central cutout 404 of the substrate 4, the function of which will be described in connection with the following Figure 8 All the continuous cutouts 400, 402, 404 are arranged on a line which defines a mirror axis of the basic region of the substrate 4, i.e. of the basic region of the insulating material body 40.

[0057] Figure 8 A three-dimensional illustration of a power electronics sub-module 2 according to the application is shown. The substrate 4 is functionally identical to the substrate according to the application Figure 7 but the substrate has a geometric deviation at the longitudinal ends. The substrate 4 is almost completely enclosed in a frame-like manner by the insulating material shaped body 20 which thus forms a partial housing of the sub-module 2.

[0058] Furthermore, the sub-module 2 has a pressure device 9 which comprises a pressure element 92 which has a dimensionally stable pressure body 920 and a plurality of invisible, rigid pressure elements which press onto the region of the substrate 4 which is not arranged with a power semiconductor assembly. As already shown in Figure 7 the substrate 4 has a third, centrally arranged continuous cutout which is aligned with the pressure device. The cutouts are configured and arranged in such a way that the pressure introduction element 90, which is configured here as a screw with a disc spring, extends through the cutouts and presses the substrate 4 by means of the pressure device 9 onto the support device.

[0059] Figure 9A plan view of a sub-module 2 for a multi-level converter according to the application is shown. Here, the first DC potential conductor track 42 is not configured to carry a negative potential, but rather a neutral potential.

[0060] Three power semiconductor assemblies 50 are arranged on the second DC potential conductor track 44, which are also configured as silicon carbide field effect transistors, but without limiting generality, the second DC potential conductor track 44 carries a positive potential during operation. In the three-level circuit, these power semiconductor assemblies 50 form upper power switches of the upper branch. A further three power semiconductor assemblies 50, which are also silicon carbide field effect transistors, and also a power diode 51 are arranged on the further conductor track 46. The three silicon carbide field effect transistors form lower power switches of the upper branch of the three-level circuit, and the power diode 51 forms an upper diode which connects the potential between the upper switches to the neutral potential.

[0061] The AC potential connection region 436 is essentially arranged and configured in the same way as in the arrangement and configuration according to Figure 7 The two DC potential connection regions 426, 446 are likewise arranged and configured in the same way as in the arrangement and configuration according to Figure 7 The central cutout 404 is likewise functionally arranged and configured according to Figure 7 in the arrangement and configuration according to

Claims

1. A power electronic sub-module (2), the power electronic sub-module comprising: A switching device comprising a substrate (4) having a first DC potential conductor track (42) with a first DC potential connection area (426) arranged thereon and a second DC potential conductor track (44) with a second DC potential connection area (446) arranged thereon, and further comprising an AC potential conductor track (43) and an AC potential connection area (436) thereon; and comprising a plurality of power semiconductor assemblies (50); and comprising internal connection means (52, 54), wherein the first DC potential connection area (426) and the second DC potential connection area (446) and also the AC potential connection area (436) are configured and arranged to be directly and polarity-correctly and conductively connected by clamping means (7) to external DC potential connection elements (60) and external AC potential connection elements (64) not associated with the sub-module (2), whereby the substrate (4) is simultaneously pressed onto a support device (3) in the sections of the first DC potential connection area (426) and the second DC potential connection area (446) and also the AC potential connection area (436).

2. Sub-module according to claim 1, wherein An insulating material shaped body (20) at least partially encloses the switching device in a frame-like manner.

3. Sub-module according to any of claims 1-2, wherein The substrate (4) has an insulating material body (40) on which the first DC potential conductor track (42) and the second DC potential conductor track (44) and also the AC potential conductor track (43) are arranged in a material-bonded manner.

4. Sub-module according to claim 3, wherein The insulating material body (40) is arranged on a metal body (48) in a material-bonded manner.

5. Sub-module according to any of claims 1-2, wherein The internal connection means are configured as a bond connection (54) or as a membrane stack (52) which in different cases consists of one or more electrically insulating and electrically conductive membranes which are at least partially inherently structured and arranged alternately.

6. Sub-module according to any of claims 1-2, wherein The substrate (4) has a first continuous cutout (400), wherein The AC potential connection area (436) is arranged adjacent to the first continuous cutout (400) or in a manner enclosing the first continuous cutout.

7. Sub-module according to claim 6, wherein The substrate (4) has a second continuous cutout (402), wherein The first DC potential connection area (426) and the second DC potential connection area (446) are arranged adjacent to the second continuous cutout (402) or wherein the second continuous cutout (402) is arranged between the first DC potential connection area (426) and the second DC potential connection area (446).

8. Sub-module according to claim 7, wherein The sub-module (2) has a pressure device (9) comprising a pressure element (92) having a dimensionally stable pressure body (920) and a plurality of rigid or elastic pressure elements (922).

9. Sub-module according to claim 8, wherein The substrate (4) has a centrally arranged third continuous cut-out (404) aligned with the cut-out of the pressure device (9), wherein The third continuous cutouts (404) are configured and arranged such that a pressure introduction element (90) extends through the third continuous cutouts and presses the substrate (4) onto the support device (3) by means of the pressure device (9).

10. Sub-module according to claim 9, wherein The first continuous cutout (400), the second continuous cutout (402) and the third continuous cutout (404) are arranged in a line.

11. Sub-module according to any of claims 1-2, wherein the first direct current potential connection region (426) and the second direct current potential connection region (446) are arranged directly adjacent to each other.

12. Sub-module according to any of claims 1-2, wherein The substrate (4) has a layer of insulating material (41) on which the first direct current potential conductor track (42) and the second direct current potential conductor track (44) and also the alternating current potential conductor track (43) are arranged in a materially bonded manner.

13. Sub-module according to claim 12, wherein The layer of insulating material (41) is arranged in a materially bonded manner on a metal layer (49).

14. Sub-module according to claim 5, wherein The bonded connection (54) is a wire bonding connection.

15. Sub-module according to claim 10, wherein The line defines a mirror axis of the substrate (4).

16. An arrangement (1) with power electronic submodules (2) according to any of the preceding claims, the arrangement comprising a support device (3), the arrangement comprising a first and a second clamping device (7), each of the first and second clamping device (7) being anchored in the support device (3), wherein, An electrically conductive force-locked connection is formed between the alternating current potential connection region (436) and the alternating current potential connection element (60) by means of the first clamping device (7), and wherein an electrically conductive force-locked connection is formed between the first direct current potential connection region (426) and the first direct current potential connection element (64) and simultaneously between the second direct current potential connection region (446) and the second direct current potential connection element by means of the second clamping device (7).

17. Arrangement according to claim 16, wherein The respective clamping device (7) is configured as a clamping element and as a clamping counter element of the support device (3).

18. Arrangement according to claim 16 or 17, wherein The respective clamping device (7) has an insulating material sleeve (74) through which the clamping element (70) extends.

19. Arrangement according to any of claims 16 to 17, wherein A plurality of sub-modules (2) form a power module.

20. Arrangement according to claim 16 or 17, wherein The support device is configured as a cooling device.

21. Arrangement according to claim 17, wherein The clamping element is a screw (70) and the clamping counter element is a cutout (32) having an internal thread.

22. Arrangement according to claim 19, wherein The plurality of sub-modules (2) form, together with the common overall housing, a power module.

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