A control voltage complementary PIN switch
By adopting a complementary control voltage design in the PIN switch and increasing the reverse bias voltage of the diode, the problem of insufficient power capacity of the traditional parallel PIN switch is solved and a larger power capacity is achieved.
Patent Information
- Application Number
- CN202011048060.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-09-29
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2040-09-29
AI Technical Summary
The power capacity of the traditional parallel PIN single-pole single-throw switch is insufficient, making it difficult to achieve greater power capacity at a fixed control voltage level.
The PIN switch design adopts a control voltage complementary type, in which the N-pole of each diode is connected to the ground capacitor and inductor, and the voltage is divided through the voltage-dividing resistor and bypass capacitor, which increases the reverse bias voltage of the diode, so that the switch is equal. The power capacity is doubled at the control level.
Through the improved control method, the reverse bias voltage on the diode is added at the same control level, which increases the power capacity and solves the problem of insufficient power capacity of the traditional switching.
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Figure CN112187240B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of microwave circuits, and in particular to a control voltage complementary type PIN switch. Background Art
[0002] In the field of microwave technology, control circuits play a very important role. The most typical control circuit is the switch. By turning on and off the switch control circuit, the switching of the system's transceiver, the change of attenuation and phase shift, etc. are realized. For switches with different uses, the emphasis of performance indicators is also different. For example, for switches used to control the transceiver path, for the transmission path, the switch is often required to have a smaller insertion loss and a larger power capacity.
[0003] At present, the control mode of the traditional parallel PIN diode switch is single-ended control, and the control level is defined as ±Vc. When +Vc is controlled, the diode is forward-biased and the switch is off; when -Vc is controlled, the diode is reverse-biased and the switch is on. The power capacity of the switch depends on the difference between the forward voltage Vth of the diode and the reverse bias control voltage -Vc of the diode. Therefore, the usual way to increase the power capacity of the switch using the PIN diode is to appropriately increase the reverse bias control voltage of the diode. For a system that only provides a fixed control voltage, how to achieve a switch with a larger power capacity is of great significance. Summary of the invention
[0004] The purpose of the present invention is to provide a control voltage complementary PIN switch, which solves the problem of insufficient power capacity of a traditional parallel PIN type single-pole single-throw switch under the premise that the control level provided by the system cannot be changed.
[0005] To achieve the above object, the technical solution of the present invention is as follows:
[0006] A control voltage complementary PIN switch comprises a parallel PIN switch, wherein the N-pole of each diode of the parallel PIN switch is respectively connected to a ground capacitor and an inductor, two of the inductors are connected in series and a voltage-dividing resistor is externally connected in the middle, and the other end of the voltage-dividing resistor is connected to a control port.
[0007] Further, the parallel PIN type switch is a two-section parallel single-pole single-throw PIN switch, including a DC blocking capacitor C1 and transmission path matching inductors L1 to L4 and a DC blocking capacitor C2 connected to the DC blocking capacitor C1 in sequence, a diode D1 connected between the inductor L1 and the inductor L2, a diode D2 connected between the inductor L3 and the inductor L4, a bias choke inductor L5, a bypass capacitor C5 and a voltage divider resistor R1 connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected to the first control port;
[0008] The N-stages of the diodes D1 and D2 are provided with capacitors C3 and C4 to ground, respectively. An inductor L6 and an inductor L7 are connected in series between the N-stages of the diodes D1 and D2, and a voltage-dividing resistor R2 and a bypass capacitor C6 are externally connected between the inductors L6 and L7. The other end of the voltage-dividing resistor R2 is connected to the second control port.
[0009] Furthermore, the inductors L6 and L7 are planar winding inductors or microstrip lines, which are chokes or quarter-wavelength lines in the switch operating frequency band, and play the role of isolating microwave signals; the bypass capacitors C5 and C6 are chip flat capacitors, which play a filtering role and are used to filter out clutter that affects the normal operation of the switch.
[0010] Furthermore, the parallel PIN type switch is a multi-section parallel single-pole multi-throw PIN switch, which is composed of multiple parallel single-pole single-throw PIN switches, and the N pole of the diode of each parallel single-pole single-throw PIN switch is provided with a capacitor to ground, two inductors are connected in series between the N poles of the two diodes and a voltage-dividing resistor is externally connected between the two inductors, and the other end of the voltage-dividing resistor is connected to the second control port.
[0011] Compared with the prior art, the beneficial effect of the present invention is that by improving the control mode of the switch, from single-ended control to complementary control, the reverse bias voltage applied to the diode is doubled under the same control level, thereby achieving an increase in power capacity. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. Among them:
[0013] Figure 1 This is the schematic diagram of a traditional two-section parallel PIN diode switch;
[0014] Figure 2 It is a schematic diagram of a differentially controlled two-section parallel single-pole single-throw PIN diode switch according to an embodiment of the present invention;
[0015] Figure 3 It is a comparison between the power capacity of signal transmission of the present invention and the conventional switch;
[0016] Figure 4 It is a schematic diagram of a multi-section parallel single-pole multi-throw PIN switch improved in an embodiment of the present invention. DETAILED DESCRIPTION
[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0018] like Figure 1 A control voltage complementary PIN switch of the present invention includes a parallel PIN switch, wherein the N-pole of each diode of the parallel PIN switch is respectively connected to a ground capacitor and an inductor, two inductors are connected in series and a voltage dividing resistor is externally connected in the middle, and the other end of the voltage dividing resistor is connected to a control port.
[0019] Traditional parallel PIN type switch such as Figure 1 As shown, it includes diodes D1 and D2, blocking capacitors C1 and C2, transmission path matching inductors L1 to L4, bias choke inductor L5, bypass capacitor C5 and voltage divider resistor R1. The blocking capacitor C1 and the transmission path matching inductors L1 to L4 and the blocking capacitor C2 connected to the blocking capacitor C1 in sequence, the diode D1 is connected between the inductor L1 and the inductor L2, the diode D2 is connected between the inductor L3 and the inductor L4, the bias choke inductor L5, the bypass capacitor C5 and the voltage divider resistor R1 are connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected to the control port 1.
[0020] As an embodiment of the present invention Figure 2 As shown, the parallel PIN switch is a two-section parallel single-pole single-throw PIN switch. On the basis of the traditional parallel PIN structure, ground capacitors C3 and C4, inductors L6 and L7, voltage-dividing resistor R2 and bypass capacitor C6 are added to the N-level of diodes D1 and D2. The N-levels of diodes D1 and D2 are provided with ground capacitors C3 and C4, respectively. Inductors L6 and L7 are connected in series between the N-levels of diodes D1 and D2, and voltage-dividing resistor R2 and bypass capacitor C6 are externally connected between inductors L6 and L7. The other end of voltage-dividing resistor R2 is connected to control port 2.
[0021] Inductors L6 and L7 are planar winding inductors or microstrip lines, which are chokes or quarter-wavelength lines in the switch operating frequency band, and play the role of isolating microwave signals; the bypass capacitors C5 and C6 are chip flat capacitors, which play a filtering role and are used to filter out clutter that affects the normal operation of the switch.
[0022] When the voltage Vc is applied to the control port 1 and the voltage -Vc is applied to the control port 2, the PIN diodes D1 and D2 are in forward bias. At this time, the resistors R1 and R2 mainly play the role of voltage division and current limiting, so that the diodes work at a safe current. Capacitors C3 and C4 provide a signal-to-ground loop when the switch is turned off (i.e., when the diode is forward biased), so that the impedance from port RFin to diode D1 and port RFout to diode D2 is very large, which is approximately an open circuit, and a good shutdown effect is produced between port RFin and RFout.
[0023] When the voltage -Vc is applied to the control port 1 and the voltage Vc is applied to the control port 2, the PIN diodes D1 and D2 are in the reverse bias state, the switch path is turned on, and the reverse bias voltage applied to the diode changes from the traditional structure Vc to the complementary 2*Vc. Therefore, the power level that can accommodate the undistorted signal on the switch path changes from the traditional structure Vc+Vth to the complementary structure 2Vc+Vth. For the contrast of signal power transmission, Figure 3 As shown, the power capacity is increased when the switch is on.
[0024] As another embodiment of the present invention Figure 4 As shown, the parallel PIN switch is a multi-section parallel single-pole multi-throw PIN switch, which is composed of a plurality of parallel single-pole single-throw PIN switches, the N pole of each diode of the parallel single-pole single-throw PIN switch is provided with a ground capacitor, two inductors are connected in series between the N poles of the two diodes, and a voltage-dividing resistor is externally connected between the two inductors, and the other end of the voltage-dividing resistor is connected to the second control port. The improved two-section parallel single-pole double-throw PIN switch principle diagram of the present invention, when the circuit is working, by applying a voltage -Vc to control port 1 and a voltage Vc to control port 2, the path of RFin and RFout1 is turned on, and the path of RFin and RFout2 is turned off; conversely, by applying a voltage Vc to control port 1 and a voltage -Vc to control port 2, the path of RFin and RFout2 is turned on, and the path of RFin and RFout1 is turned off.
[0025] The on-off of the switch of the present invention does not necessarily require a differential level as the control voltage. As long as the control voltage difference between the control ports 1 and 2 is greater than Vth, the switch control of the circuit can be achieved. Therefore, the present invention can achieve a control method compatible with the traditional two-section parallel PIN-type diode switch by grounding the control port 2.
[0026] In addition, the method described in the present invention is not limited to the two-section parallel single-pole single-throw PIN switch implemented in the present invention, and is also applicable to single-pole multi-throw multi-section parallel PIN switches.
[0027] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.
Claims
1. A control voltage complementary PIN switch, comprising a parallel PIN switch, characterized in that: The parallel PIN-type switch is connected to a capacitor and an inductor to the ground at the N pole of each diode, two inductors are connected in series and a voltage-dividing resistor is connected to the outside in the middle, and the other end of the voltage-dividing resistor is connected to the control port; The parallel PIN switch is a two-section parallel single-pole single-throw PIN switch, including a DC blocking capacitor C1 and transmission path matching inductors L1 to L4 and a DC blocking capacitor C2 connected to the DC blocking capacitor C1 in sequence, a diode D1 connected between the inductor L1 and the inductor L2, a diode D2 connected between the inductor L3 and the inductor L4, a bias choke inductor L5, a bypass capacitor C5 and a voltage divider resistor R1 connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected to the first control port; The N-stages of the diodes D1 and D2 are provided with capacitors C3 and C4 to ground, respectively; inductors L6 and L7 are connected in series between the N-stages of the diodes D1 and D2, and a voltage-dividing resistor R2 and a bypass capacitor C6 are externally connected between the inductors L6 and L7; the other end of the voltage-dividing resistor R2 is connected to the second control port; the inductors L6 and L7 are planar winding inductors or microstrip lines, which are chokes or quarter-wavelength lines of the switch working frequency band, and play a role in isolating microwave signals; the bypass capacitors C5 and C6 are chip planar capacitors, which play a filtering role, and are used to filter out clutter that affects the normal operation of the switch.
2. The voltage-complementary PIN switch according to claim 1, characterized in that: The parallel PIN type switch is a multi-section parallel single-pole multi-throw PIN switch, which is composed of multiple parallel single-pole single-throw PIN switches. The N pole of the diode of each parallel single-pole single-throw PIN switch is provided with a capacitor to ground, two inductors are connected in series between the N poles of the two diodes, and a voltage-dividing resistor is externally connected between the two inductors, and the other end of the voltage-dividing resistor is connected to the second control port.