Substrate processing system

Abstract

The present invention provides a substrate processing system, which includes a first chamber, a second chamber and a cooling passage. The first chamber provides a space for processing a substrate, wherein the substrate is transported from a first conveying chamber maintained in a vacuum atmosphere. The second chamber is configured to be internally connected to the first conveying chamber and the second conveying chamber maintained in an atmospheric atmosphere. The second chamber has a floor area substantially the same as that of the first chamber. The second chamber and the first chamber are arranged side by side below the first chamber in the vertical direction. The cooling passage is arranged between the first chamber and the second chamber. A cooling medium flows in the cooling passage. According to the present invention, the floor area of the substrate processing system can be reduced.

Description

Technical Field

[0001] The present invention relates to a substrate processing system. Background Art

[0002] A load lock chamber having one or more separate environments isolated from the surroundings has been proposed (Patent Document 1). The load lock chamber of Patent Document 1 includes a chamber body comprising a plurality of chambers vertically stacked and isolated from the surroundings, wherein the chambers are separated by horizontal inner walls that are resistant to vacuum. Furthermore, a dual load lock chamber capable of processing substrates has been proposed (Patent Document 2). The dual load lock chamber of Patent Document 2 includes a chamber body having a first chamber space and a second chamber space that are separated from each other.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-501549.

[0006] Patent Document 2: Japanese Patent Application Publication No. 2014-511575. Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a technology capable of suppressing the footprint of a substrate processing system.

[0009] Technical means to solve the problem

[0010] A substrate processing system according to one embodiment of the present invention includes a first chamber, a second chamber, and a cooling passage. The first chamber provides a space for processing a substrate, wherein the substrate is transported from a first conveying chamber maintained in a vacuum atmosphere. The second chamber is configured to be internally connected to the first conveying chamber and the second conveying chamber maintained in an atmospheric atmosphere. The second chamber has a footprint substantially the same as that of the first chamber. The second chamber and the first chamber are arranged side by side below the first chamber in the vertical direction. The cooling passage is arranged between the first chamber and the second chamber. A cooling medium flows through the cooling passage.

[0011] Effects of the Invention

[0012] According to the present invention, the footprint of the substrate processing system can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a diagram showing an example of the configuration of a substrate processing system according to one embodiment.

[0014] Figure 2This is a schematic cross-sectional view showing the structure of a load lock assembly included in a substrate processing system according to one embodiment.

[0015] Figure 3 This is a flowchart showing an example of the flow of substrate processing performed by the substrate processing system according to one embodiment.

[0016] Description of Reference Numerals

[0017] 1. Substrate processing system

[0018] 10 Loading port

[0019] 20 Atmospheric transport chamber

[0020] 21 First conveying mechanism

[0021] 30 Load interlock assembly

[0022] 40 Vacuum conveying chamber

[0023] 41 Second conveying mechanism

[0024] 50 Processing Components

[0025] 60 Control Device

[0026] 110 Chamber 1

[0027] 111 loading platform

[0028] 112 upper electrode

[0029] 113 Partition wall components

[0030] 114 High-Frequency Power Supply

[0031] 115 Gas supply mechanism

[0032] 117 Gate

[0033] 118 Gate Valve

[0034] 120 Chamber 2

[0035] 121 loading platform

[0036] 122 Cooling mechanism

[0037] 123 Exhaust mechanism

[0038] 125 Gate

[0039] 126 Gate Valve

[0040] 127 Gate

[0041] 128 Gate Valve

[0042] 130 cooling passages

[0043] 131 Supply device

[0044] H Heater DETAILED DESCRIPTION

[0045] The following describes embodiments of the present invention in detail with reference to the accompanying drawings. This embodiment is not intended to be limiting. Furthermore, the various embodiments can be appropriately combined within the scope of not causing conflicting treatment contents. In addition, in this specification and the accompanying drawings, substantially identical components are denoted by the same reference numerals to omit duplicate descriptions.

[0046] In the drawings referenced below, to facilitate understanding, an orthogonal coordinate system is sometimes shown, with the X-axis, Y-axis, and Z-axis directions being perpendicular to each other, and the positive Z-axis direction being the vertically upward direction. The X-axis and Y-axis directions are horizontal. In the following description, the positive Z-axis direction is sometimes referred to as upward, and the negative Z-axis direction is sometimes referred to as downward.

[0047] In the dual load-lock assembly of Patent Document 2, which has a first chamber space and a second chamber space, substrate heating and other processes are performed in the second chamber space. Therefore, the assembly supporting the heated substrate is substantially thermally isolated from the chamber body. Furthermore, a mechanism is provided to cool the assembly supporting the substrate. However, due to the processing performed in the second chamber space, adequate temperature control is difficult. Furthermore, in the load-lock assembly, it is desirable to cool the processed substrate before releasing it into the atmosphere.

[0048] Therefore, in the substrate processing system of the embodiment described below, a load lock assembly is formed by at least two chambers having substantially the same footprint and constructed separately. Furthermore, a cooling passage is provided between the at least two chambers. Therefore, according to the substrate processing system of the embodiment, substrate processing and post-processing substrate transport can be achieved within the load lock assembly without increasing the footprint of the substrate processing system.

[0049] In the following description, “atmosphere” refers to a normal atmosphere, that is, an air environment, and “vacuum atmosphere” refers to an environment that is reduced in pressure compared to the atmospheric atmosphere.

[0050] (An Example of a Substrate Processing System According to an Embodiment)

[0051] Figure 1 1 is a diagram showing an example of the structure of a substrate processing system according to an embodiment of the present invention. The substrate processing system 1 includes a load port 10 , an atmospheric transfer chamber 20 , a load lock module 30 , a vacuum transfer chamber 40 , a processing module 50 , and a control device 60 .

[0052] The loading port 10 is a loading portion where a carrier for storing substrates, such as a FOUP (Front Opening Unified Pod), can be placed. When the FOUP is fixed and placed on the loading port 10, the cover of the FOUP and the gate of the loading port 10 move in conjunction with each other, thereby enabling the substrates in the FOUP to be delivered to the atmospheric conveying chamber 20. The substrates to be processed in the substrate processing system 1 are transported from the FOUP configured at the loading port 10 through the atmospheric conveying chamber 20, the load interlock assembly 30, and the vacuum conveying chamber 40 to the processing assembly 50. When the processing in the processing assembly 50 is completed, the substrates are returned to the FOUP. Figure 1 In the example shown, load ports 10A, 10B, and 10C are shown. Unless otherwise specified, load ports 10A to 10C are collectively referred to as load ports 10. Furthermore, the number of load ports 10 provided in the substrate processing system 1 is not limited to the number shown in the figure, and four or more load ports may be provided.

[0053] The atmospheric transport chamber 20 is maintained in an atmospheric atmosphere and provides a space capable of transporting substrates. Figure 1 The atmospheric transfer chamber 20 shown is generally rectangular in plan view. A plurality of load ports 10 are arranged along one long side of the generally rectangular shape. A load lock assembly 30 is arranged on the long side opposite the long side where the load ports 10 are arranged.

[0054] A first conveying mechanism 21 for conveying substrates is disposed in the atmospheric conveying chamber 20. The first conveying mechanism 21 is, for example, a conveying robot having an arm movable in three axes (X-axis, Y-axis, and Z-axis). The first conveying mechanism 21 takes a substrate out of a FOUP and places the substrate on a loading table (loading table 121, see FIG. 1 ) in the load lock assembly 30. Figure 2 ).

[0055] The load lock assembly 30 provides a space for transferring substrates between the atmospheric transfer chamber 20 and the vacuum transfer chamber 40. In addition, the load lock assembly 30 provides a space for processing substrates. Figure 2 It is a schematic cross-sectional view showing the structure of the load lock assembly 30 included in the substrate processing system 1 according to one embodiment. Figure 2 The load lock assembly 30 is shown along Figure 1 A schematic cross section of AA. In addition, Figure 1 Two load lock assemblies 30A and 30B are shown, and unless otherwise specified, they are collectively referred to as load lock assemblies 30. The number of load lock assemblies 30 included in the substrate processing system 1 is not limited to that shown, and three or more load lock assemblies 30 may be provided.

[0056] Figure 2The load lock assembly 30 shown has a first chamber 110, a second chamber 120 and a cooling passage 130. The first chamber 110, like the chamber of the processing assembly 50 described later, provides a space in which substrate processing can be performed. A loading table 111 on which a substrate to be processed is placed is arranged in the center of the first chamber 110. Inside the loading table 111, a heater H is provided as a heating mechanism for heating the loading table 111. An upper electrode 112 is arranged above the loading table 111 via a partition wall component 113. The upper electrode 112 is, for example, a coil that generates an induced electromagnetic field by applying a voltage. The upper electrode 112 is arranged at the top of the first chamber 110. The upper electrode 112 is connected to a high-frequency power supply 114. The high-frequency power supply 114 supplies high-frequency electric power to the upper electrode 112. A plurality of through holes are formed in the partition wall component 113. The through-holes allow free radicals in the plasma generated on the upper electrode 112 side above the partition member 113 to pass through and move toward the mounting table 111 side below the partition member 113. Specifically, the partition member 113 blocks the ions and ultraviolet light in the generated plasma, allowing only the free radicals to pass through and move toward the side where the substrate to be processed is located. Furthermore, the first chamber 110 is connected to a gas supply mechanism 115 for supplying processing gas into the first chamber 110, an exhaust mechanism 116 for exhausting the first chamber 110, and the like. Furthermore, a cooling mechanism for cooling components heated by substrate processing may also be provided in the first chamber 110.

[0057] Within the first chamber 110, substrate processing is performed under the control of the control device 60. Examples of substrate processing include etching, ashing, and film formation. The substrate processing performed within the first chamber 110 is not particularly limited. However, in this embodiment, the first chamber 110 is located near the atmospheric transfer chamber 20. Therefore, foreign matter removal, which is performed after etching and film formation within the processing module 50 and before the substrate is transported to the atmospheric transfer chamber 20, can be conveniently performed within the first chamber 110.

[0058] The interior space of the first chamber 110 communicates with the vacuum transfer chamber 40 via a gate 117. The gate 117 can be opened and closed in a hermetically sealed manner by a gate valve 118. The interior space of the first chamber 110 is not connected to the atmospheric transfer chamber 20. The gate 117 is sized to allow the front end of the second transfer mechanism 41 (described later) holding the substrate to enter.

[0059] The stage 111 has a plurality of lift pins that can rise to a position protruding from the surface of the stage 111 and fall to a position embedded in the stage 111. The lift pins receive the substrate transported from the vacuum transfer chamber 40 in the raised position. After receiving the substrate, the lift pins are lowered to place the substrate on the stage 111. When the substrate is sent out from the first chamber 110, the lift pins are raised to separate the substrate from the surface of the stage 111. After the front end of the arm of the second transport mechanism (described later) enters between the surface of the stage 111 and the lower surface of the substrate, the lift pins are lowered to place the substrate on the arm to transport it to the vacuum transfer chamber 40. In addition, as an example of substrate transport by lift pins, other mechanisms can be used to transport substrates between the first chamber 110 and the vacuum transfer chamber 40.

[0060] The second chamber 120 is arranged below the first chamber 110. The second chamber 120, like the first chamber 110, has a mounting table 121 on which a substrate can be mounted. The mounting table 121 has a cooling mechanism 122 for cooling the substrate mounted thereon. The cooling mechanism 122 is configured to cool the mounting table 121 to room temperature, for example, greater than 25 degrees Celsius to about 30 degrees Celsius. After cooling, the substrate is transported to the atmospheric transport chamber 20. In addition, the mounting table 121 is similar to the mounting table 111 of the first chamber 110, and may also have a heating mechanism, etc. In addition, the second chamber 120 has an exhaust mechanism 123 for adjusting the internal atmosphere.

[0061] Furthermore, the stage 121 has a plurality of lift pins that can be raised to a position protruding from the surface of the stage 121 and lowered to a position embedded within the stage 121. In the raised position, the lift pins receive substrates transported from the atmospheric transfer chamber 20 and the vacuum transfer chamber 40, respectively. After receiving the substrate, the lift pins descend to place the substrate on the stage 121. When the substrate is transported from the second chamber 120, the lift pins ascend to release the substrate from the surface of the stage 121. After the tip of the arm of the first or second transport mechanism (described later) enters between the surface of the stage 121 and the lower surface of the substrate, the lift pins descend to place the substrate on the arm for transport. As with the first chamber 110, substrate transport between the second chamber 120 and the atmospheric transfer chamber 20 and the vacuum transfer chamber 40 using lift pins is merely an example; other mechanisms may also be used to transport substrates.

[0062] The interior of the second chamber 120 communicates with the atmospheric transfer chamber 20 via a gate 125. Gate 125 can be opened and closed in a hermetically sealed manner by a gate valve 126. The interior of the second chamber 120 also communicates with the vacuum transfer chamber 40 via a gate 127. Gate 127 can be opened and closed in a hermetically sealed manner by a gate valve 128. Gates 125 and 127 are each sized to accommodate the front ends of the first transfer mechanism 21 and second transfer mechanism 41, each holding a substrate.

[0063] Thus, each of the load-lock assemblies 30 (30A, 30B) has at least two chambers (the first chamber 110 and the second chamber 120). The first chamber 110 and the second chamber 120 are formed as independent and separate structures.

[0064] The cooling passage 130 is provided between the first chamber 110 and the second chamber 120. The cooling passage 130 may have its upper surface formed by the bottom surface of the first chamber 110 and its lower surface formed by the upper surface of the second chamber 120. Figure 1 In the example of FIG. 1 , the outline of the cooling passage 130 is indicated by a dotted line. Figure 1 The cooling passage 130 is arranged along the direction of the long side of the atmospheric transport chamber 20, that is, the X-axis direction. The cooling passage 130 and the supply device 131 (see Figure 1 ) is connected. The supply device 131 supplies a cooling medium of a predetermined temperature to the cooling passage 130. The cooling medium flowing through the cooling passage 130 absorbs the heat generated by the substrate processing in the first chamber 110 and returns to the supply device 131. The supply device 131 adjusts the cooling medium circulating in the cooling passage 130 to a predetermined temperature and sends it back to the cooling passage 130. A plurality of cooling passages 130 may also be arranged side by side between the first chamber 110 and the second chamber 120. In addition, one cooling passage 130 may also be arranged in a manner that reciprocates multiple times between the first chamber 110 and the second chamber 120. In addition, the cooling medium flowing in the cooling passage 130 may also be a gas or liquid cooled to a predetermined temperature. In addition, the supply device 131 may be a device including a pump, a valve, etc. that circulates the cooled liquid, or a device that generates an airflow such as a fan.

[0065] Back to Figure 1 , the description of the substrate processing system 1 is continued.

[0066] The vacuum transfer chamber 40 is maintained in a vacuum atmosphere and provides a space for transferring substrates. Figure 1 The vacuum transfer chamber 40 shown is roughly pentagonal in plan view. Load lock assemblies 30A and 30B are positioned along two sides of the pentagon. Processing assembly 50 is positioned along the other two sides of the pentagon. However, the placement of load lock assembly 30 and processing assembly 50 is not limited to that shown.

[0067] A second transport mechanism 41 for transporting substrates is located within the vacuum transport chamber 40. Like the first transport mechanism 21, the second transport mechanism 41 is a transport robot having an arm movable in three axes. The second transport mechanism 41 transports substrates between the load lock module 30 and the processing module 50.

[0068] The processing module 50 is a substrate processing chamber for performing substrate processing. The structure of the processing module 50 can adopt the structure described in Japanese Patent No. 6141855, for example.

[0069] The control device 60 is, for example, a computer, and includes a storage unit 60 a and a control unit 60 b .

[0070] The storage unit 60 a is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores programs for controlling various processes executed in the substrate processing system 1 .

[0071] The control unit 60b includes a microcomputer and various circuits including a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The control unit 60b controls the operation of the substrate processing system 1 by reading and executing programs stored in the storage unit 60a.

[0072] The program may be stored in a computer-readable storage medium or installed from the storage medium into the storage unit 60a of the control device 60. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0073] (An example of a substrate processing flow)

[0074] Below, refer to Figure 3 , an example of a process of substrate processing performed by the substrate processing system 1 according to the embodiment will be described. Figure 3 This is a flowchart showing an example of a process for substrate processing performed by a substrate processing system according to one embodiment.

[0075] First, a FOUP is fixed and set at the loading port 10 (step S1). The first conveying mechanism 21 grasps the substrate in the FOUP and conveys the substrate from the gate 125 opened by the gate valve 126 to the second chamber 120 (step S2). The first conveying mechanism 21 places the substrate on the mounting table 121 in the second chamber 120. After the substrate is placed, the gate valve 126 is closed, and the second chamber 120 is exhausted to create a vacuum atmosphere in the second chamber 120. Then, the gate 127 is opened by the gate valve 128. The second conveying mechanism 41 in the vacuum conveying chamber 40 enters the second chamber 120 and grasps the substrate on the mounting table 121, and conveys the substrate to the vacuum conveying chamber 40 (step S3). The second conveying mechanism 41 conveys the substrate to the processing assembly 50 instructed by the control device 60 (step S4). The number of processes performed on one substrate and the number of processing modules 50 to which the substrate is transported for the processes are not particularly limited. Based on a schedule preset in the control device 60, the second transport mechanism 41 repeatedly transports the substrate to and from the processing module 50 to perform substrate processing (step S5).

[0076] When the processing of the substrate in the processing assembly 50 is completed, the second conveying mechanism 41 conveys the substrate to the first chamber 110 (step S6). First, the gate 117 is opened by the gate valve 118. The second conveying mechanism 41 conveys the substrate to the first chamber 110 via the gate 117 and places it on the mounting table 111. When the substrate is sent into the first chamber 110, the gate valve 118 is closed. In the first chamber 110, the processing of the substrate is implemented under the control of the control device 60 (step S7). The substrate processing implemented in the first chamber 110 is, for example, post-processing. The post-processing is, for example, ashing. When the processing in the first chamber 110 is completed, the gate 117 is opened again by the gate valve 118. The second conveying mechanism 41 grasps the substrate on the mounting table 111 and sends it to the vacuum conveying chamber 40 (step S8). Next, the second conveying mechanism 41 conveys the substrate into the second chamber 120 (step S9). First, the gate 127 is opened by the gate valve 128. At this time, the gate valve 126 is closed. Then, the second conveying mechanism 41 arranges the substrate on the mounting table 121 in the second chamber 120 and evacuates to the side of the vacuum conveying chamber 40. After the second conveying mechanism 41 evades, the gate valve 128 is closed. In the second chamber 120, the cooling mechanism 122 cools the mounting table 121 under the control of the control device 60, thereby reducing the temperature of the substrate to a predetermined temperature range (step S9). Next, the gate 125 is opened by the gate valve 126. Then, the first conveying mechanism 21 enters the second chamber 120 through the gate 125. The first conveying mechanism 21 grasps the substrate on the mounting table 121 and sends it to the side of the atmospheric conveying chamber 20. The first transport mechanism 21 transports the substrate to the designated FOUP under the control of the control device 60 (step S10). Thus, the processing of the substrate in the substrate processing system 1 is completed.

[0077] During processing by the substrate processing system 1, the cooling medium is supplied to the cooling passage 130 while substrate processing is being performed in the first chamber 110. Alternatively, the cooling medium may continue to be supplied to the cooling passage 130 for a predetermined period of time after substrate processing in the first chamber 110. The length of the cooling medium supply period can be set in consideration of the temperature increase caused by substrate processing in the first chamber 110, the temperature of the cooling medium, and the like.

[0078] In addition, it is preferred that the floor space of the first chamber 110 and the second chamber 120 is approximately the same. By constructing in this way, compared with the existing load interlock assembly, the two chambers can be arranged to overlap in the vertical direction without major design changes, which can suppress the floor space of the substrate processing system 1. In addition, in the present embodiment, the two chambers are arranged to overlap in the vertical direction within the load interlock assembly, but more than three chambers can also be arranged to overlap in the vertical direction. In this case, a cooling passage is arranged between each chamber. The supply device for supplying the cooling medium can be provided in common with multiple cooling passages, or a plurality of cooling passages can be provided corresponding to each cooling passage.

[0079] The distance between the mounting surface of the mounting table 111 of the first chamber 110 and the mounting surface of the mounting table 121 of the second chamber 120 is not particularly limited, but is preferably about 250 mm in order to suppress an increase in the height of the load-lock assembly 30 .

[0080] In the above embodiment, the first chamber 110 is described as a plasma processing apparatus that generates inductively coupled plasma (ICP). However, the disclosed technology is not limited to this. Any other plasma source, such as capacitively coupled plasma (CCP) or microwave plasma, may be used as the plasma source for the first chamber 110.

[0081] In addition, Figure 3 In the processing example, the processing in the first chamber 110 is performed at the end of the substrate processing in the processing module 50. However, the present invention is not limited to this, and the substrate processing in the processing module 50 may be performed after the substrate processing in the first chamber 110. In addition, after the substrate processing in the processing module 50, the substrate may be directly transferred to the second chamber 120 and then sent out to the atmospheric transfer chamber 20.

[0082] (Effects of the embodiment)

[0083] As described above, a substrate processing system according to one embodiment includes a first chamber, a second chamber, and a cooling passage. The first chamber provides a space for processing substrates, wherein the substrates are transported from the first transport chamber maintained in a vacuum atmosphere. The second chamber is configured to be internally connected to the first transport chamber and the second transport chamber maintained in an atmospheric atmosphere. The second chamber has a floor area substantially the same as that of the first chamber. The second chamber and the first chamber are arranged side by side below the first chamber in the vertical direction. For example, when viewed from above, that is, from the top, the second chamber is located below the first chamber. Figure 1When viewed from the positive direction of the Z-axis to the negative direction, the second chamber is arranged in such a manner that the upper surface of the second chamber and the bottom surface of the first chamber actually overlap. The cooling passage is arranged between the first chamber and the second chamber. A cooling medium flows in the cooling passage. Thus, in the substrate processing system of the embodiment, the first chamber and the second chamber are arranged to overlap in the upper and lower directions in such a manner that the floor areas of the two chambers are approximately the same. Therefore, according to the embodiment, the floor area of the substrate processing system can be suppressed. In addition, by arranging the first chamber that provides a space for implementing substrate processing at the position of the load interlock assembly, the number of processing components can be suppressed. In addition, the space within the substrate processing system can be effectively utilized.

[0084] Furthermore, the substrate processing system of the above embodiment has a cooling passage with a portion of its inner wall formed by at least a portion of the bottom surface of the first chamber and the top surface of the second chamber. Therefore, the substrate processing system can be constructed while suppressing an increase in the number of components.

[0085] The substrate processing system of the above embodiment further includes a supply device for supplying a cooling medium to the cooling passage. Furthermore, the cooling passage and the supply device are disposed outside the first transfer chamber, the second transfer chamber, the first chamber, and the second chamber. Therefore, there is no need to adjust the substrate transport path to configure a mechanism, which would be located in the load lock assembly, to suppress heat exchange between the first and second chambers, thereby enabling smooth substrate transport.

[0086] Furthermore, the first chamber of the substrate processing system of the above embodiment houses a substrate processing device capable of performing any of ashing, etching, and film formation. Therefore, the substrate processing system of the embodiment can arbitrarily combine the processes performed in the processing module and the first chamber according to the order in which the substrates are processed to achieve substrate processing.

[0087] Furthermore, the second chamber of the substrate processing system of the embodiment includes a cooling mechanism for cooling the substrate. Therefore, the substrate processing system of the embodiment can transfer the processed substrate to the atmospheric transfer chamber after adjusting its temperature.

[0088] Furthermore, the first chamber of the substrate processing system of the above-described embodiment may include a heating mechanism for heating the substrates and a cooling mechanism, separate and independent from the cooling passage, for cooling components heated by substrate processing. Therefore, even if substrate processing in the first chamber causes the temperature of the processing space and surrounding components to rise, heat exchange between the first chamber and the second chamber can be suppressed.

[0089] The embodiments of the present invention should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A substrate processing system, characterized in that: include: a first chamber providing a space for processing a substrate, wherein the substrate is transferred from a first transfer chamber maintained in a vacuum atmosphere; a second chamber, the interior of which is capable of communicating with the first transfer chamber and the second transfer chamber maintained at an atmospheric atmosphere, having substantially the same floor area as the first chamber, and being arranged below the first chamber in parallel with the first chamber in the vertical direction; and a cooling passage formed between the bottom surface of the first chamber and the upper surface of the second chamber formed separately from the first chamber, and through which a cooling medium flows; The first chamber includes a heating mechanism for heating the substrate and a cooling mechanism that is separate and independent from the cooling passage and cools a processing space heated by substrate processing and surrounding components of the processing space.

2. The substrate processing system according to claim 1, wherein: Also included is a supply device for supplying a cooling medium to the cooling passage, The cooling passage and the supply device are arranged outside the first transfer chamber, the second transfer chamber, the first chamber, and the second chamber.

3. The substrate processing system according to claim 1 or 2, wherein: The first chamber houses a substrate processing device capable of performing any of ashing, etching, and film formation.

4. The substrate processing system according to claim 1 or 2, wherein: The second chamber includes a cooling mechanism for cooling the substrate.

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