Mounting table and substrate processing device

Abstract

The present invention provides a mounting platform and a substrate processing device. The temperature of the outermost periphery of a substrate is controlled. A mounting platform is provided, the mounting platform having a first surface located outside the substrate and a second surface for mounting the substrate, wherein the mounting platform forms a first flow path corresponding to the first surface.

Description

Technical Field

[0001] The present disclosure relates to a mounting table and a substrate processing apparatus. Background Art

[0002] In a substrate processing apparatus, in order to adjust the temperature of a substrate placed on a mounting table, a refrigerant controlled to a predetermined temperature flows into a flow path provided inside the mounting table, thereby cooling the substrate (see, for example, Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2006-261541

[0004] Patent Document 2: Japanese Patent Application Publication No. 2011-151055

[0005] Patent Document 3: Japanese Patent No. 5210706

[0006] Patent Document 4: Japanese Patent No. 5416748 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The present disclosure provides a mounting table and a substrate processing apparatus capable of controlling the temperature of the outermost periphery of a substrate.

[0009] Solutions for solving problems

[0010] According to one aspect of the present disclosure, there is provided a mounting table having a first surface located outside a substrate and a second surface on which the substrate is mounted, wherein a first flow path is formed corresponding to the first surface.

[0011] Effects of the Invention

[0012] According to one technical solution, the temperature of the outermost periphery of the substrate can be controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment.

[0014] Figure 2 It is a diagram showing an example of a flow path according to an embodiment.

[0015] Figure 3 It is a diagram showing an example of the structure and arrangement conditions of a flow path according to one embodiment.

[0016] Figure 4 This is a diagram showing an example of the positional relationship between the outermost periphery of the substrate and the heat source according to one embodiment.

[0017] Figure 5 This is a diagram showing an example of experimental results of the presence or absence of a flow channel and the temperature of a substrate installation region according to one embodiment. DETAILED DESCRIPTION

[0018] Hereinafter, the mode for implementing the present disclosure will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals and overlapping descriptions may be omitted.

[0019] [Substrate processing equipment]

[0020] use Figure 1 A substrate processing apparatus 1 according to an embodiment will be described. Figure 1 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 includes a chamber 10. The chamber 10 provides an internal space 10s therein. The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The chamber body 12 is formed, for example, of aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The film may be a ceramic such as aluminum oxide or yttrium oxide.

[0021] A passage 12p is formed in the side wall of the chamber body 12. The substrate W passes through the passage 12p and is transferred between the internal space 10s and the outside of the chamber 10. The passage 12p is opened and closed by a gate valve 12g provided along the side wall of the chamber body 12.

[0022] A support portion 13 is provided on the bottom of the chamber body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a substantially cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 12 in the internal space 10s. The support portion 13 has a mounting table 14 at the upper portion. The mounting table 14 is configured to support the substrate W in the internal space 10s.

[0023] The mounting table 14 has a base 18 and an electrostatic chuck 20. The mounting table 14 may also have an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disc shape. The base 18 is provided on the electrode plate 16. The base 18 is formed of a conductor such as aluminum and has a substantially disc shape. The base 18 is electrically connected to the electrode plate 16.

[0024] The electrostatic chuck 20 is placed on the loading surface of the base 18, and the substrate W is placed on the loading surface of the electrostatic chuck 20. Hereinafter, the loading surface of the electrostatic chuck 20 on which the substrate W is placed is referred to as the "second surface 20c". The main body of the electrostatic chuck 20 has a roughly disc shape and is formed of a dielectric. In the electrostatic chuck 20, an electrode 20a is buried parallel to the second surface 20c. The electrode 20a of the electrostatic chuck 20 is a film-shaped electrode. The electrode 20a of the electrostatic chuck 20 is connected to a DC power supply 20p via a switch. When a voltage from the DC power supply 20p is applied to the electrode 20a of the electrostatic chuck 20, an electrostatic attraction is generated between the electrostatic chuck 20 and the substrate W. By utilizing this electrostatic attraction, the substrate W is held on the electrostatic chuck 20.

[0025] The electrostatic chuck 20 has a step around the substrate, and the surface outside the step becomes the mounting surface of the edge ring 25. Thus, the edge ring 25 is arranged around the substrate W. The edge ring 25 improves the in-plane uniformity of the plasma treatment performed on the substrate W. The edge ring 25 can be formed of silicon, silicon carbide, or quartz. The edge ring 25 is an example of a ring member located around the substrate, and is also called a focusing ring. Hereinafter, the mounting surface of the electrostatic chuck 20 on which the edge ring 25 is arranged is referred to as the "first surface 20d" located outside the substrate.

[0026] The mounting table 14 involved in this embodiment has the electrostatic chuck 20, but is not limited thereto. For example, the mounting table 14 may not have the electrostatic chuck 20. In this case, the substrate W is mounted on the mounting surface of the base 18, the mounting surface of the base 18 constitutes the second surface 20c on which the substrate is mounted, and the mounting surface of the base 18 closer to the periphery than the substrate constitutes the first surface 20d located outside the substrate.

[0027] As described above, the edge ring 25 is provided around the substrate W on the first surface 20d, and the first surface 20d is the outer upper surface of the electrostatic chuck 20 that attracts the edge ring 25. In addition, the substrate W is placed on the second surface 20c, and the second surface 20c is the inner upper surface of the electrostatic chuck 20 that attracts the substrate W.

[0028] Hereinafter, as an example of a heat exchange medium, a refrigerant is cited for explanation, but the heat exchange medium is not limited thereto, and a temperature adjustment medium may also be used. A first flow path 19b for circulating the refrigerant is formed on the outer periphery below the first surface 20d in the base 18. The refrigerant is supplied to the first flow path 19b from the cooling unit 22 provided outside the chamber 10 via the pipe 23a. The refrigerant flows in the pipe 23a, and is supplied to the first flow path 19b from the refrigerant supply port, flows to the discharge port, and returns to the cooling unit 22 via the pipe 23b.

[0029] In addition, a second flow path 19a is formed in the center below the second surface 20c in the base 18, and a refrigerant flows in the second flow path 19a. The refrigerant is supplied to the second flow path 19a via the pipe 22a from the cooling unit 22. The refrigerant flows in the pipe 22a, is supplied to the second flow path 19a from the refrigerant supply port, flows to the discharge port, and returns to the cooling unit 22 via the pipe 22b.

[0030] The electrostatic chuck 20 has a first heater 20e. The first heater 20e is buried under the first surface 20d and is near the step of the electrostatic chuck 20. A first heater 20e is provided between the first surface 20d and the first flow path 19b. The first heater 20e is connected to the power supply 52, and when a voltage from the power supply 52 is applied to the first heater 20e, the first heater 20e is heated. The first heater 20e is used to control the temperature of the edge ring 25. In addition, the first heater 20e is used to control the temperature of a local area of ​​the outermost periphery of the substrate (for example, about 2 to 3 mm from the end of the substrate).

[0031] In addition, the electrostatic chuck 20 has a second heater 20b for controlling the temperature of the substrate W. The second heater 20b is buried in parallel with the electrode 20a in the electrostatic chuck 20. The second heater 20b is connected to the power supply 51, and when the voltage from the power supply 51 is applied to the second heater 20b, the second heater 20b is heated. The second heater 20b is used to control the temperature of the substrate W.

[0032] That is, in the substrate processing apparatus 1 of this structure, the temperature of the substrate W placed on the electrostatic chuck 20 is adjusted by heat exchange between each refrigerant and the base 18 and between each heater and the base 18. In addition, the first flow path 19b is an example of a flow path in which a heat exchange medium flows corresponding to the first surface 20d. The second flow path 19a is an example of a flow path in which a heat exchange medium flows corresponding to the second surface 20c. If the first flow path 19b is formed on the mounting table 14, the second flow path 19a may not exist.

[0033] In the present embodiment, the first flow path 19b and the second flow path 19a are connected in parallel to a cooling unit 22 capable of flowing refrigerant into the first flow path 19b and the second flow path 19a. However, the present invention is not limited thereto, and the first flow path 19b and the second flow path 19a may also be connected in series to a cooling unit 22 capable of flowing refrigerant into the first flow path 19b and the second flow path 19a. As shown in the present embodiment, two cooling units 22 may be arranged, and refrigerants of independent systems may be circulated in the first flow path 19b and the second flow path 19a, respectively, or one cooling unit 22 may be arranged, and refrigerant may be circulated in both the first flow path 19b and the second flow path 19a.

[0034] The substrate processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism to a space between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.

[0035] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the mounting table 14. The upper electrode 30 is supported on the upper portion of the chamber body 12 via a member 32. The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0036] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on the inner space 10s side and divides the inner space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates less Joule heat. The top plate 34 has a plurality of gas ejection holes 34a that penetrate the top plate 34 in the plate thickness direction.

[0037] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. The support body 36 has a plurality of pores 36b extending downward from the gas diffusion chamber 36a. The plurality of pores 36b are respectively connected to the plurality of gas ejection holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0038] The gas supply pipe 38 is connected with a valve group 42, a flow controller group 44 and a gas source group 40. The gas source group 40, the valve group 42 and the flow controller group 44 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 44 are all mass flow controllers or pressure-controlled flow controllers. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding on-off valves of the valve group 42 and the corresponding flow controllers of the flow controller group 44.

[0039] The substrate processing apparatus 1 is provided with a shield 46 in a detachable manner along the inner wall surface of the chamber body 12 and the outer periphery of the support portion 13. The shield 46 prevents the reaction byproducts from adhering to the chamber body 12. The shield 46 is formed by forming a corrosion-resistant film on the surface of a base material formed of aluminum, for example. The corrosion-resistant film can be formed of ceramics such as yttrium oxide.

[0040] A baffle plate 48 is provided between the support portion 13 and the side wall of the chamber body 12. The baffle plate 48 is formed by, for example, forming a corrosion-resistant film (a film of yttrium oxide, etc.) on the surface of a base material formed of aluminum. A plurality of through holes are formed in the baffle plate 48. An exhaust port 12e is provided below the baffle plate 48 and at the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 53. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0041] The substrate processing device 1 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating a first high-frequency power. The first high-frequency power has a frequency suitable for generating plasma. The frequency of the first high-frequency power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the base 18 via a matching device 66 and an electrode plate 16. The matching device 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the impedance of the load side (base 18 side). In addition, the first high-frequency power supply 62 can also be connected to the upper electrode 30 via the matching device 66. The first high-frequency power supply 62 constitutes a plasma generating portion in an example.

[0042] The second high-frequency power source 64 is a power source for generating a second high-frequency power. The second high-frequency power has a frequency lower than that of the first high-frequency power. When the second high-frequency power is used together with the first high-frequency power, the second high-frequency power is used as a high-frequency power for biasing ions to attract ions to the substrate W. The frequency of the second high-frequency power is, for example, a frequency in the range of 400kHz to 13.56MHz. The second high-frequency power source 64 is connected to the base 18 via a matcher 68 and an electrode plate 16. The matcher 68 has a circuit for matching the output impedance of the second high-frequency power source 64 with the impedance of the load side (base 18 side).

[0043] In addition, the second high-frequency power may be used instead of the first high-frequency power, that is, only a single high-frequency power may be used to generate plasma. In this case, the frequency of the second high-frequency power may be a frequency greater than 13.56 MHz, for example, 40 MHz. The substrate processing device 1 may not include the first high-frequency power supply 62 and the matching device 66. The second high-frequency power supply 64 constitutes a plasma generating unit in one example.

[0044] In the substrate processing apparatus 1, gas is supplied from the gas supply unit to the internal space 10s to generate plasma. In addition, by supplying the first high frequency power and / or the second high frequency power, a high frequency electric field is generated between the upper electrode 30 and the base 18. The generated high frequency electric field generates plasma.

[0045] The substrate processing device 1 may further include a control unit 80. The control unit 80 may be a computer having a processor, a storage unit such as a memory, an input device, a display device, a signal input and output interface, and the like. The control unit 80 controls various parts of the substrate processing device 1. For the control unit 80, an input device can be used to input instructions, etc., so that the operator can manage the substrate processing device 1. In addition, for the control unit 80, a display device can be used to visually display the operating status of the substrate processing device 1. Moreover, a control program and process data are stored in the storage unit. The control program is executed by the processor, so that various processes are performed by the substrate processing device 1. The processor executes the control program and controls various parts of the substrate processing device 1 according to the process data.

[0046] [flow path]

[0047] The substrate W is cooled by allowing the refrigerant cooled to a specified temperature to flow in the second flow path 19a provided inside the base 18, but it is difficult to control the temperature of a local area of ​​the outermost periphery of the substrate, for example, a few mm from the end of the substrate having a diameter of more than 300 mm.

[0048] Therefore, for the mounting table 14 involved in this embodiment, the first flow path 19b is provided at a position closer to the outside than the diameter of the substrate, and the first flow path 19b is arranged at a position where the range of influence of the temperature control by the refrigerant flowing through the flow path of the second flow path 19a is small, so that the temperature of the outermost periphery of the substrate is locally controlled. In addition, in this embodiment, the cross-sectional area of ​​the first flow path 19b is relatively smaller than the cross-sectional area of ​​the second flow path 19a to increase the flow rate. As a result, the temperature of the outermost periphery of the substrate can be further locally controlled.

[0049] Figure 2 It is a diagram showing an example of a flow path according to an embodiment. Figure 2 (a) shows a cross-sectional view of the base 18. Figure 2 As shown in (a), the second flow path 19a is formed in a spiral shape in the base 18. However, the shape of the second flow path 19a is not limited to this, and it can also be annular, etc., or it can be other shapes. The first flow path 19b is formed in a roughly annular shape around the second flow path 19a. However, the shape of the first flow path 19b is not limited to this, and it can also be formed in an annular shape or a spiral shape with more than two turns, or it can be other shapes.

[0050] Figure 2 (b) indicates Figure 2AA section of (a). With respect to the end of the substrate W or the step of the electrostatic chuck 20, the outer peripheral side is set as the first area (outer peripheral area), and the inner peripheral side is set as the second area (substrate setting area). In this embodiment, in order to control the temperature of the outermost periphery of the substrate with a portion approximately 2 to 3 mm from the end of the substrate W as the target, the first flow path 19b formed in the first area of ​​the base 18 is set as a necessary structure. It is also possible not to have the second flow path 19a formed in the base 18 in the second area.

[0051] In addition, a first heater 20e is provided in the first region, and the first heater 20e is mainly used to control the temperature of the edge ring 25 placed on the first surface 20d. In the present embodiment, the first heater 20e is provided in the electrostatic chuck 20, but it is not limited to this, and it may be provided in the base 18. The second heater 20b provided in the electrostatic chuck 20 in the first region may not be provided.

[0052] The cross-sectional area S of the first flow passage 19b is smaller than the cross-sectional area S' of the second flow passage 19a. Thus, the flow velocity of the refrigerant flowing through the first flow passage 19b can be made higher than the flow velocity of the refrigerant flowing through the second flow passage 19a, thereby improving the heat dissipation effect of the first region.

[0053] Furthermore, by combining the first flow path 19 b and the first heater 20 e , it is possible to perform temperature control in a range of about several mm from the outermost periphery of the substrate, that is, the end of the substrate, with higher accuracy.

[0054] [Configuration conditions]

[0055] (Condition 1)

[0056] The first flow path 19b controls the temperature of the edge ring 25 placed on the first surface 20d. In addition, the first flow path 19b controls the temperature of the outermost periphery of the substrate. Figure 3 The arrangement conditions of the first flow channel 19b will be described. Figure 3 19b and the second flow path 19a according to one embodiment of the present invention are shown in FIG. 19b. The vertical distance from the first surface 20d to the first flow path 19b is set to h, and the horizontal distance from the boundary surface between the first surface 20d and the second surface 20c to the first flow path 19b is set to d. In this case, the first flow path 19b is provided in a region satisfying condition 1 such that d>h. Condition 1 can also be replaced by tan －1 (h / d)<45°.

[0057] In this embodiment, Figure 3The temperature control of the temperature control target area Tg of the outermost periphery of the substrate shown in the figure. The temperature control target area Tg is an area about 2mm to 5mm away from the upper surface of the electrostatic chuck 20, that is, the end of the second surface 20c. Structurally, the corner portion formed by the end of the second surface 20c and the boundary surface between the first surface 20d and the second surface 20c is easy to adhere to the reaction products generated during substrate processing, and is easy to become hot due to the heat input of the plasma. Therefore, the temperature control of the temperature control target area Tg is important. In addition, by improving the temperature controllability of the outermost peripheral area of ​​the substrate, the yield is increased, and productivity can be improved. Based on the above reasons, in this embodiment, the temperature of the temperature control target area Tg is controlled by configuring the structure of the first flow path 19b of the first area in a manner that satisfies the above-mentioned condition 1 and the following conditions.

[0058] In addition, in the present embodiment, the upper surface (the first surface 20d and the second surface 20c) of the mounting table 14 has a step, but it is not necessary to have a step. In the case of no step, position C overlaps position B. In addition, the heat transfer from the first flow path 19b is transferred to position B via position C.

[0059] Therefore, in either the case where the upper surface of the mounting table 14 has a step or the case where the upper surface of the mounting table 14 does not have a step, local temperature control of the temperature control object area Tg can be performed by controlling the temperature of position C, which is the shortest distance that heat moves from the first flow path 19b.

[0060] (Condition 2)

[0061] In addition, the width in the horizontal direction of the second flow path 19a formed in the base 18 in the second region is set to w1, and the width in the horizontal direction of the first flow path 19b formed in the base 18 in the first region is set to w2. In this case, it is preferred that w1>w2. When the flow rate of the refrigerant flowing through the first flow path 19b and the flow rate of the refrigerant flowing through the second flow path 19a are constant and the length in the height direction of the first flow path 19b is less than the length in the height direction of the second flow path 19a, the narrower the width of the first flow path 19b, the faster the flow rate. As a result, the flow rate of the refrigerant flowing in the first flow path 19b can be higher than the flow rate of the refrigerant flowing in the second flow path 19a. As a result, the heat exhaust control of the first region is improved, and the temperature control of the outermost periphery of the substrate can be performed with higher accuracy.

[0062] (Condition 3)

[0063] When the horizontal distance from the first flow channel 19b to the second flow channel 19a is d', it is preferable that d'>d. This can further improve the heat removal control of the first region and further improve the temperature controllability of the outermost periphery of the substrate.

[0064] (Condition 4)

[0065] Furthermore, the conditions of the angle θ when the first flow path 19b is set as the heat source will be described with reference to FIG. 4. Figure 4 1 is a diagram showing an example of the positional relationship between the outermost periphery of the substrate around the end of the substrate involved in one embodiment and the heat source. As the heat source, the first flow path 19b is cited as an example for explanation, but the heat source may also be the first heater 20e provided in the first area. Figure 4 In FIG. 1 , for convenience of explanation, the first flow path 19 b serving as a heat source is indicated by dots.

[0066] like Figure 3 As shown in FIG. 1 , the angle θ is the angle formed by the extension line of the upper surface of the first flow channel 19b and the line connecting the inner end of the upper surface (the side close to the temperature control target area Tg) and the position C. Figure 4 As shown in (a), when the angle θ is 90°, ΔT, i.e., the temperature influence range of the mounting table 14 indicated by “←” is within Figure 4 (a)~ Figure 4 The largest one among (d). Figure 4 (b)~ Figure 4 As shown in (d), the angle θ is 60°, 45°, and 30°. The smaller the angle θ is, the shorter ΔT, that is, the length of “←” is, and the smaller the temperature influence range of the mounting table 14 is.

[0067] That is, the smaller the angle θ is, the smaller the temperature influence range of the mounting table 14 is, so that the temperature can be locally controlled, which is preferred. However, when the angle θ is less than 60°, the relative effect of the temperature influence range relative to the angle θ is small. For example, if the angle θ is less than 60°, it is considered that the temperature control target area Tg can be locally controlled.

[0068] [experiment]

[0069] Next, refer to Figure 5 The results of measuring the temperature of the installation region of the substrate in the case where the first flow channel 19 b is provided and the case where the first flow channel 19 b is not provided will be described. Figure 5 1 and 2. The figure is an example of experimental results showing the presence or absence of the first flow path 19b and the temperature of the substrate installation area according to one embodiment. The temperature of the substrate installation area refers to the temperature of the back side of the substrate when the substrate is placed on the second surface 20c or the second surface 20c on which the substrate is placed.

[0070] Figure 5 (1) indicates the case where the first flow path 19b is present and the first flow path 19b is narrow. The case where the first flow path 19b is narrow means Figure 3The relationship between the width w1 of the second flow path 19a in the horizontal direction and the width w2 of the first flow path 19b in the horizontal direction satisfies the condition of w1>w2.

[0071] Figure 5 (2) is a case where the first flow path 19b is not provided. Figure 5 (3) indicates a case where the first flow path 19b for controlling the outermost periphery of the substrate is provided and the first flow path 19b is thicker than the case (1). The case where the first flow path 19b is thicker means a case where the relationship between the width w1 of the second flow path 19a in the horizontal direction and the width w2 of the first flow path 19b in the horizontal direction satisfies the condition of w1=w2 or w1<w2.

[0072] In any of the cases (1) to (3), the second region includes the second flow path 19a and the second heater 20b.

[0073] Figure 5 The horizontal axis represents the position in the radial direction of the substrate, and the vertical axis represents the temperature of the installation area of ​​the substrate. Figure 5 The position 100 mm from the center of the substrate with a diameter of 300 mm is set as the left end of the graph, representing the temperature of the second region from the left end to the substrate end, i.e. 148 mm, and the temperature of the first region from the substrate end, i.e. 148 mm, to 160 mm on the periphery of the substrate.

[0074] according to Figure 5 As a result, in the first region, in the case (1) where the first flow path 19b is thinner, the cooling effect of the refrigerant is higher, and the temperature of the outermost periphery of the substrate is lowered, compared with the case (2) where there is no first flow path 19b and the case (3) where the first flow path 19b is thicker. That is, the case (1) where the first flow path 19b is thinner can improve the temperature controllability of the outermost periphery of the substrate compared with the cases (2) and (3).

[0075] As a result, the temperature difference ΔT of the substrate installation area is larger in the cases (1) and (3) with the first flow path 19b than in the case (2) without the first flow path 19b. As a result, the temperature of the outermost periphery of the substrate (about 2 to 3 mm from the end of the substrate) can be locally reduced. Moreover, in the case (1) where the first flow path 19b is thinner, the temperature of the outermost periphery of the substrate can be further reduced compared to the case (3) where the first flow path 19b is thicker than (1).

[0076] As described above, according to the mounting table 14 and the substrate processing apparatus 1 according to the present embodiment, the temperature of the outermost periphery of the substrate can be controlled.

[0077] In addition, in this embodiment, as a structure for controlling the temperature of the outermost periphery of the substrate, the first flow path 19b is mainly cited as a heat source, but it is not limited to this. For example, as a structure for controlling the temperature of the outermost periphery of the substrate, the first heater 20e may be used, and the first flow path 19b and the first heater 20e may be used in combination. In addition, as a heat source, a heating element or a piezoelectric element may be used.

[0078] In addition, although the example in which one first heater 20e is provided between the first surface 20d and the first flow path 19b is cited and described, the present invention is not limited thereto, and a plurality of first heaters 20e may be provided. When a plurality of first heaters 20e are provided, it is preferred that at least one of the plurality of first heaters 20e is provided between the first surface 20d and the first flow path 19b.

[0079] It should be understood that the mounting table and substrate processing device involved in the embodiment disclosed this time are illustrative in all aspects and are not restrictive. The above embodiment can be deformed and improved in various forms as long as it does not deviate from the claims and their main purpose. The matters recorded in the above multiple embodiments can also adopt other structures within the scope of non-contradiction. In addition, they can be combined within the scope of non-contradiction.

[0080] The substrate processing device disclosed in the present invention can also be applied to any type of device including Atomic Layer Deposition (ALD: atomic layer deposition) device, Capacitively Coupled Plasma (CCP: capacitively coupled plasma), Inductively Coupled Plasma (ICP: inductively coupled plasma), Radial Line Slot Antenna (RLSA: radial line slot antenna), Electron Cyclotron Resonance Plasma (ECR: electron cyclotron resonance plasma), and Helicon Wave Plasma (HWP: helicon wave plasma).

[0081] In addition, a plasma processing device is cited as an example of the substrate processing device 1, but the substrate processing device is not limited to a plasma processing device. For example, the substrate processing device 1 may also be a heat treatment device, a thermal ALD device, a thermal CVD (Chemical Vapor Deposition) device, etc. that performs heat treatment on the substrate W using a heating mechanism such as a heater without generating plasma. In addition, the substrate processing device 1 may also be an etching device or a film forming device.

Claims

1. A mounting table, the mounting table having a first surface located outside a substrate and a second surface on which the substrate is mounted, wherein: forming a first flow path corresponding to the first surface, A ring member is provided on the first surface, the ring member being located around the substrate, The angle formed by the extension line of the upper surface of the first flow path and the line connecting the end of the upper surface of the first flow path on the side close to the second surface and the inner end of the first surface is 60 degrees or less. Let the vertical distance between the first surface and the first flow path be h, and let the horizontal distance from the boundary surface between the first surface and the second surface to the first flow path be d. In this case, d>h. The mounting table has a first heater, which is provided between the first surface and the first flow path in a vertical direction and is configured to control the temperature of the ring member. When viewed from above, the first heater is provided between the second surface and the first flow path in a horizontal direction, and the first heater and the first flow path do not overlap each other.

2. The mounting table according to claim 1, wherein: forming a second flow path corresponding to the second surface, The width of the second flow path in the horizontal direction is set to w1, and the width of the first flow path in the horizontal direction is set to w2. In this case, w1>w2.

3. The mounting table according to claim 2, wherein: Assuming that the horizontal distance from the first flow path to the second flow path is d', in this case, d'>d.

4. The mounting table according to claim 2, wherein: The first flow path and the second flow path are connected in parallel to a cooling unit capable of allowing a heat exchange medium to flow into the first flow path and the second flow path.

5. The mounting table according to claim 2, wherein: The first flow path and the second flow path are connected in series to a cooling unit that allows a heat exchange medium to flow into the first flow path and the second flow path.

6. The mounting table according to claim 1, wherein: The first surface is an outer upper surface of the electrostatic chuck to which the ring member is attracted.

7. The mounting table according to claim 6, wherein: The second surface is an inner upper surface of the adsorption substrate of the electrostatic chuck.

8. The mounting table according to claim 6 or 7, wherein: The electrostatic chuck includes a second heater parallel to the second surface, and the second heater controls the temperature of the substrate.

9. The mounting table according to claim 1, wherein: The first flow path is formed at a position outside an end portion of the substrate.

10. A substrate processing device, comprising: a chamber in which plasma processing or heat processing is performed; and a mounting table in which a substrate is mounted on an electrostatic chuck inside the chamber, wherein: The mounting table has a first surface located outside the substrate and a second surface on which the substrate is mounted, and a first flow path is formed corresponding to the first surface. A ring member is provided on the first surface, the ring member being located around the substrate, The angle formed by the extension line of the upper surface of the first flow path and the line connecting the end of the upper surface of the first flow path on the side close to the second surface and the inner end of the first surface is 60 degrees or less. Let the vertical distance between the first surface and the first flow path be h, and let the horizontal distance from the boundary surface between the first surface and the second surface to the first flow path be d. In this case, d>h. The mounting table has a first heater, which is provided between the first surface and the first flow path in a vertical direction and is configured to control the temperature of the ring member. When viewed from above, the first heater is provided between the second surface and the first flow path in a horizontal direction, and the first heater and the first flow path do not overlap each other.

11. The substrate processing apparatus according to claim 10, wherein: forming a second flow path corresponding to the second surface, The substrate processing apparatus includes a cooling unit capable of allowing a heat exchange medium to flow into the first flow path and the second flow path.

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