Substrate supporting unit and substrate processing device having the same

Abstract

The present application provides a substrate support unit and a substrate processing device having the substrate support unit, wherein the substrate support unit controls the gradient of the central region and the edge region of the substrate by changing the impedance of the central electrode and the edge electrode constituting the lower electrode in the process chamber. The substrate processing device includes: a housing; a nozzle unit, which is arranged on the upper side of the interior of the housing and introduces a process gas for processing the substrate into the interior of the housing; and a support unit, which is arranged on the lower side of the interior of the housing and has an electrostatic chuck for placing the substrate, wherein the electrostatic chuck includes: a dielectric plate constituting a main body; a first heater, which heats a first region of the dielectric plate; and a second heater, which heats a second region of the dielectric plate, and the etching rate of the substrate by region is controlled by adjusting the voltage or impedance applied to the first heater and the second heater respectively.

Description

Technical Field

[0001] The present invention relates to a substrate supporting unit and a substrate processing apparatus having the same. More particularly, the present invention relates to a substrate supporting unit having an electrostatic chuck serving as a lower electrode and a substrate processing apparatus having the same. Background Art

[0002] A semiconductor device may be manufactured by forming a predetermined pattern on a substrate. When the predetermined pattern is formed on the substrate, various processes such as a deposition process, a photolithography process, and an etching process may be continuously performed in an apparatus for a semiconductor manufacturing process. Summary of the invention

[0003] Technical issues solved

[0004] A plasma process for manufacturing semiconductor devices may be performed in a process chamber.

[0005] However, as the RF time in the process chamber increases, the etch rate in the edge zone of the substrate (e.g., wafer) may increase. In this case, the relevant parts (e.g., focus ring) may need to be replaced periodically, and excessive maintenance costs may be incurred, and the time for using the device may be shortened.

[0006] A technical object of the present invention is to provide a substrate supporting unit that controls the gradient of a central region and an edge region of a substrate according to impedance changes of a central electrode and an edge electrode constituting a lower electrode in a process chamber.

[0007] Another technical object of the present invention is to provide a substrate processing device having a substrate supporting unit, which controls the gradient between the central area and the edge area of ​​the substrate according to the impedance changes of the central electrode and the edge electrode forming the lower electrode in the process chamber.

[0008] The objects of the present invention are not limited to the above objects, and those skilled in the art can clearly understand other objects not mentioned through the following description.

[0009] Workaround

[0010] To achieve the above-mentioned purpose, one aspect of the substrate processing device of the present invention includes: a shell; a nozzle unit, which is arranged on the upper side of the interior of the shell and introduces a process gas for processing a substrate into the interior of the shell; and a support unit, which is arranged on the lower side of the interior of the shell and has an electrostatic chuck for placing the substrate, wherein the electrostatic chuck includes: a dielectric plate, which constitutes the main body of the electrostatic chuck; a first heater, which is used to heat a first area of ​​the dielectric plate; and a second heater, which is used to heat a second area of ​​the dielectric plate, wherein the etching rate of the substrate by area is controlled by adjusting the voltage or impedance applied to the first heater and the second heater respectively.

[0011] The electrostatic chuck may include: a first capacitor connected to the first heater and a second capacitor connected to the second heater, wherein an etching rate by area is controlled by adjusting capacitance of the first capacitor and capacitance of the second capacitor.

[0012] At least one of the first capacitor and the second capacitor may be a variable capacitor.

[0013] The electrostatic chuck may also include: a first filter, which is arranged between the AC power supply and the first heater and is used to remove noise signals flowing from the first heater to the AC power supply; and a second filter, which is arranged between the AC power supply and the second heater and is used to remove noise signals flowing from the second heater to the AC power supply, wherein the first capacitor and the second capacitor may be connected to the first heater and the second heater respectively through the first filter and the second filter.

[0014] When the etching rate of the first area of ​​the substrate is higher than the etching rate of the second area of ​​the substrate, the etching rate by area is controlled by increasing the capacitance of the first capacitor or decreasing the capacitance of the second capacitor, and when the etching rate of the second area of ​​the substrate is higher than the etching rate of the first area of ​​the substrate, the etching rate by area is controlled by decreasing the capacitance of the first capacitor or increasing the capacitance of the second capacitor.

[0015] The electrostatic chuck may further include a control part which controls voltage or impedance respectively applied to the first heater and the second heater based on an etching rate by area.

[0016] To achieve the above-mentioned purpose, one aspect of the substrate supporting unit of the present invention includes: an electrostatic chuck for placing a substrate to be etched by plasma; a susceptor disposed at the lower portion of the electrostatic chuck and for supporting the electrostatic chuck; and a ring assembly disposed on a side surface of the electrostatic chuck to focus plasma on the substrate, wherein the electrostatic chuck includes: a dielectric plate constituting a main body of the electrostatic chuck; a first heater for heating a first area of ​​the dielectric plate; and a second heater for heating a second area of ​​the dielectric plate, wherein the etching rate of the substrate by area is controlled by adjusting the voltage or impedance applied to the first heater and the second heater, respectively.

[0017] To achieve the above-mentioned purpose, another aspect of the substrate processing device of the present invention includes: a shell; a nozzle unit, which is arranged on the upper side of the interior of the shell and introduces a process gas for processing the substrate into the interior of the shell; and a support unit, which is arranged on the lower side of the interior of the shell and has an electrostatic chuck for placing the substrate, wherein the electrostatic chuck includes: a dielectric plate, which includes a first heater and a second heater, the first heater is used to heat a first area of ​​the dielectric plate, and the second heater is used to heat a second area of ​​the dielectric plate; and a lower electrode, to which RF power is applied, wherein the substrate processing device also includes: a lower power supply, which applies RF power to the lower electrode; a first filter, which includes a first variable capacitor; a second filter, which includes a second variable capacitor; an AC power supply, which provides a first AC signal to the first heater through the first filter, and provides a second AC signal to the second heater through the second filter; and a control unit, which is used to adjust at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor.

[0018] By adjusting at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor through the control unit, at least one of the impedance of the central region and the impedance of the edge region of the lower electrode can be adjusted.

[0019] By adjusting at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor through the control unit, the etching rate for each region of the substrate can be controlled.

[0020] The control part may control at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor based on the etching rate.

[0021] The first filter may be disposed between the AC power source and the first heater and remove a noise signal flowing from the first heater to the AC power source, and the second filter may be disposed between the AC power source and the second heater and remove a noise signal flowing from the second heater to the AC power source.

[0022] Specific matters of other embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 FIG. 1 is a cross-sectional view schematically showing a structure of a substrate processing apparatus having a substrate supporting unit according to an embodiment of the present invention.

[0024] Figure 2 FIG. 1 is a cross-sectional view schematically showing a structure of a substrate processing apparatus according to another embodiment of the present invention.

[0025] Figure 3 FIG. 1 is a cross-sectional view schematically showing the structure of an electrostatic chuck according to an embodiment of the present invention.

[0026] Figure 4 FIG. 1 is a plan view showing a schematic structure of a heating member of an electrostatic chuck according to an embodiment of the present invention.

[0027] Figure 5 1 is a first exemplary diagram for explaining a method of controlling gradients of a central region and an edge region of a substrate according to an embodiment of the present invention.

[0028] Figure 6 FIG. 2 is a second exemplary diagram for explaining a method of controlling gradients of a central region and an edge region of a substrate according to an embodiment of the present invention.

[0029] Figure 7 FIG. 1 is a cross-sectional view schematically showing a structure of a substrate processing apparatus according to another embodiment of the present invention. DETAILED DESCRIPTION

[0030] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. With reference to the embodiments described in detail below in conjunction with the accompanying drawings, the advantages and features of the present invention and the methods for achieving the advantages and features will become clear. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and the present embodiments are provided only to complete the disclosure of the present invention and to fully inform the scope of the invention to a person of ordinary skill in the art to which the present invention belongs, and the present invention is limited only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0031] When an element or layer is referred to as being "above" or "over" another element or layer, it includes not only being directly above another element or layer, but also including the case where another layer or element intervenes. Conversely, when an element is referred to as being "directly above" or "directly over," it means that there is no other element or layer intervening.

[0032] Spatially relative terms such as "below", "below", "lower", "above", "upper", etc. may be used to facilitate description of the relationship between an element or constituent element as shown in the figure and other elements or constituent elements. Spatially relative terms should be understood as terms that include different directions of the element when in use or in operation in addition to the direction shown in the figure. For example, in the case where the elements shown in the figure are flipped, an element described as being "below" or "below" another element may be positioned "above" another element. Therefore, the exemplary term "below" may include both below and above directions. Elements may also be oriented in other directions, and therefore spatially relative terms may be interpreted based on the orientation.

[0033] Although the terms first, second, etc. are used to describe various elements, constituent elements and / or parts, it is clear that these elements, constituent elements and / or parts are not limited by these terms. These terms are only used to distinguish one element, constituent element or part from other elements, constituent elements or parts. Therefore, within the technical concept of the present invention, the first element, first constituent element or first part mentioned below can obviously also be the second element, second constituent element or second part.

[0034] The terms used in this specification are used to describe the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specified in a sentence, the singular form also includes the plural form. The "comprises" and / or "comprising" used in the specification means including the mentioned constituent elements, steps, operations and / or elements, without excluding the existence or addition of more than one other constituent elements, steps, operations and / or elements.

[0035] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification can be used as meanings that are generally understood by those of ordinary skill in the art to which the present invention belongs. In addition, unless clearly and specifically defined, terms defined in commonly used dictionaries should not be interpreted in an idealized or excessive manner.

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals regardless of the drawing numbers, and repeated description thereof is omitted.

[0037] In a process chamber for performing a dry etching process, as the RF time increases, the etching rate in the edge zone of a substrate (e.g., a wafer) may increase. Therefore, it is necessary to control the gradient change between the central area and the edge area of ​​the substrate.

[0038] The present invention relates to a substrate supporting unit and a substrate processing device having the same, wherein the substrate supporting unit controls the gradient of the central region and the edge region of the substrate by changing the impedance of the central electrode and the edge electrode constituting the lower electrode in the process chamber. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 FIG. 1 is a cross-sectional view schematically showing a structure of a substrate processing apparatus having a substrate supporting unit according to an embodiment of the present invention.

[0040] like Figure 1 As shown, the substrate processing apparatus 100 may include a housing 110 , a support unit 120 , a plasma generating unit 130 , a shower head unit 140 , a first gas supply unit 150 , a second gas supply unit 160 , a liner 170 , and a baffle unit 180 .

[0041] The substrate processing apparatus 100 is a system that processes the substrate W using a dry etching process, and may also be referred to as a substrate processing apparatus. The substrate processing apparatus 100 may process the substrate W using, for example, a plasma process.

[0042] The housing 110 provides a space in which a plasma process is performed. The housing 110 may have an exhaust hole 111 at a lower portion thereof.

[0043] The exhaust hole 111 may be connected to an exhaust line 113 installed with a pump 112. The exhaust hole 111 may exhaust reaction byproducts generated during the plasma process and gas remaining in the housing 110 to the outside of the housing 110 through the exhaust line 113. In this case, the inner space of the housing 110 may be depressurized to a predetermined pressure.

[0044] The opening 114 may be formed on a side wall of the housing 110 . The opening 114 may function as a passage for the substrate W to enter and exit the housing 110 . The opening 114 may be configured to be opened and closed by a door assembly 115 .

[0045] The door assembly 115 may include an outer door 115a and a door driver 115b. The outer door 115a is disposed on the outer wall of the housing 110. The outer door 115a may be moved in a vertical direction (i.e., the third direction 30) by the door driver 115b. The door driver 115b may be operated using a motor, a hydraulic cylinder, a pneumatic cylinder, etc.

[0046] The support unit 120 is disposed in the lower area of ​​the housing 110. The support unit 120 may support the substrate W using electrostatic force. However, the present invention is not limited thereto. The support unit 120 may support the substrate W in various ways, such as mechanical clamping, vacuum, and the like.

[0047] When the support unit 120 supports the substrate W using an electrostatic force, the support unit 120 may include a susceptor 121 , an electrostatic chuck 122 , a ring assembly 123 , a heating member 124 , and a cooling member 125 .

[0048] The electrostatic chuck (ESC) 122 supports the substrate (W) placed thereon by using an electrostatic force. The electrostatic chuck 122 may be made of a ceramic material and may be combined with the base 121 to be fixed thereto.

[0049] The electrostatic chuck 122 can control the gradient of the central region and the edge region of the substrate by changing the impedance of the central electrode and the edge electrode constituting the lower electrode inside the housing 110. In this embodiment, the use time of the device can be extended and the maintenance cost can be reduced. This feature of the electrostatic chuck 122 will be described later with reference to the accompanying drawings.

[0050] Meanwhile, the electrostatic chuck 122 may be provided to be movable in the vertical direction (ie, the third direction 30) in the housing 110. When the electrostatic chuck 122 is formed to be movable in the vertical direction, the substrate W may be positioned in a region where plasma distribution is more uniform.

[0051] The ring assembly 123 surrounds the edge of the electrostatic chuck 122. The ring assembly 123 may have a ring shape to support an edge region of the substrate W. The ring assembly 123 may include a focus ring 123a and an insulating ring 123b.

[0052] The focus ring 123a is formed inside the insulating ring 123b and surrounds the electrostatic chuck 122. The focus ring 123a may be made of a silicon material and may focus plasma onto the substrate W.

[0053] The insulating ring 123b is formed on the outer side of the focusing ring 123a and surrounds the focusing ring 123a. The insulating ring 123b may be made of quartz material.

[0054] In addition, the ring assembly 123 may further include an edge ring formed in close contact with the edge of the focus ring 123a. The edge ring may be formed to prevent the side surface of the electrostatic chuck 122 from being damaged by plasma.

[0055] The heating member 124 and the cooling member 125 are provided to maintain the substrate W at a process temperature when the etching process is performed in the housing 110. To this end, the heating member 124 may be provided as a heating line, and the cooling member 125 may be provided as a cooling line through which a coolant flows.

[0056] The heating member 124 and the cooling member 125 may be disposed in the support unit 120 to maintain a process temperature of the substrate W. As an example, the heating member 124 may be disposed inside the electrostatic chuck 122 , and the cooling member 125 may be disposed inside the susceptor 121 .

[0057] The first gas supply unit 150 supplies gas to remove impurities remaining on the upper portion of the ring assembly 123 or the edge portion of the electrostatic chuck 122. The first gas supply unit 150 may include a first gas supply source 151 and a first gas supply line 152.

[0058] The first gas supply source 151 may supply nitrogen (N 2 Gas) is used as a gas for removing foreign matter. However, the present invention is not limited thereto. The first gas supply source 151 may supply other gases or a cleaning agent.

[0059] The first gas supply line 152 is disposed between the electrostatic chuck 122 and the ring assembly 123. For example, the first gas supply line 152 may be formed to be connected between the electrostatic chuck 122 and the focus ring 123a.

[0060] In addition, the first gas supply line 152 may be disposed inside the focus ring 123 a and may be formed to be bent to connect the electrostatic chuck 122 and the focus ring 123 a .

[0061] The plasma generating unit 130 generates plasma from the gas remaining in the discharge space. Here, the discharge space refers to a space located above the support unit 120 in the internal space of the housing 110.

[0062] The plasma generating unit 130 may generate plasma in a discharge space inside the housing 110 using an inductively coupled plasma (ICP) source. In this case, the plasma generating unit may use an antenna 135 disposed at an upper portion of the housing 110 as an upper electrode and an electrostatic chuck 122 as a lower electrode.

[0063] However, the present invention is not limited thereto. The plasma generating unit 130 may also generate plasma in the discharge space inside the housing 110 using a capacitively coupled plasma (CCP) source. In this case, the plasma generating unit 130 may use the showerhead unit 140 disposed in the housing 110 as an upper electrode and the electrostatic chuck 122 as a lower electrode.

[0064] The structure of the substrate processing apparatus 500 when the plasma generating unit 130 uses a capacitively coupled plasma (CCP) source will be described hereinafter with reference to the accompanying drawings.

[0065] The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power source 131 , and a lower power source 133 .

[0066] The upper power source 131 applies power to the upper electrode and functions as a plasma source for generating plasma or controls plasma characteristics together with the lower power source 133 .

[0067] Although in Figure 1 A single upper power source 131 is shown in the figure, but in this embodiment, a plurality of upper power sources 131 may be provided. When a plurality of upper power sources 131 are provided, the substrate processing apparatus 100 may further include a first matching circuit (not shown) electrically connected to the plurality of upper power sources.

[0068] The first matching circuit may match the power having frequencies of different magnitudes input from the respective upper power sources and applied to the shower head unit 140 .

[0069] In addition, a first impedance matching circuit (not shown) may be provided on the first transmission line 132 connecting the upper power source 131 and the antenna 135 to perform impedance matching.

[0070] The first impedance matching circuit may function as a lossless passive circuit so that power may be efficiently (ie, maximally) transferred from the upper power source 131 to the antenna 135 .

[0071] The lower power source 133 applies power to the lower electrode. Such a lower power source 133 can form a sheath voltage to cause ions to collide with the substrate W, thereby promoting anisotropic etching.

[0072] Although in Figure 1 A single lower power supply 133 is shown in the figure, but similar to the upper power supply 131, multiple lower power supplies 133 may be provided in this embodiment. In the case where multiple lower power supplies 133 are provided, a second matching circuit (not shown) electrically connected to the multiple lower power supplies may also be included.

[0073] The second matching circuit may match the power having different magnitudes of frequencies input from the respective lower power sources and applied to the electrostatic chuck 122 .

[0074] In addition, a second impedance matching circuit (not shown) may be provided on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 122 to perform impedance matching.

[0075] Similar to the first impedance matching circuit, the second impedance matching circuit functions as a lossless passive circuit so that electrical energy can be efficiently (ie, maximally) transferred from the lower power source 133 to the electrostatic chuck 122 .

[0076] As described above, when the plasma generating unit 130 uses an inductively coupled plasma (ICP) source, the antenna 135 may be used as an upper electrode and the electrostatic chuck 122 may be used as a lower electrode. At this time, the upper power source 131 may apply power to the antenna 135.

[0077] The antenna 135 may serve as an upper electrode and may be disposed at an upper portion of the housing 110 .

[0078] The antenna 135 is provided with a coil forming a closed loop. The antenna 135 generates a magnetic field and an electric field inside the housing 110 based on the power supplied from the upper power supply 131, thereby exciting the gas flowing into the housing 110 through the showerhead unit 140 into plasma.

[0079] The antenna 135 may be configured as a planar spiral coil. However, the present invention is not limited thereto. A person skilled in the art may make various modifications to the structure or size of the coil.

[0080] In addition, the antenna 135 may be disposed outside the housing 110 separately from the housing 110. Figure 2 As shown, the antenna 135 may be disposed above the housing 110 . Figure 2 FIG. 1 is a cross-sectional view schematically showing a structure of a substrate processing apparatus according to another embodiment of the present invention.

[0081] The shower head unit 140 may be disposed inside the housing 110 to face the electrostatic chuck 122 vertically. The shower head unit 140 may include a plurality of gas feeding holes 141 to inject gas into the housing 110 and may have a larger diameter than the electrostatic chuck 122.

[0082] In addition, the shower head unit 140 may be made of a silicon material or a metal material.

[0083] The second gas supply unit 160 supplies the process gas to the inside of the housing 110 through the showerhead unit 140. Such a second gas supply unit 160 may include a second gas supply source 161 and a second gas supply line 162.

[0084] The second gas supply source 161 supplies an etching gas for processing the substrate W as a process gas. The second gas supply source 161 can supply a fluorine-containing gas (e.g., SF 6 CF 4 etc.) are used as etching gas.

[0085] The second gas supply source 161 may be provided in a single number to supply the etching gas to the shower head unit 140. However, the present invention is not limited thereto. The second gas supply source 161 may be provided in plural numbers to supply the process gas to the shower head unit 140.

[0086] The second gas supply line 162 connects the second gas supply source 161 and the shower head unit 140. The second gas supply line 162 transfers the process gas supplied through the second gas supply source 161 to the shower head unit 140 so that the etching gas flows into the interior of the housing 110.

[0087] In addition, when the nozzle unit 140 is divided into a center zone, a middle zone, an edge zone, etc., the second gas supply unit 160 may also include a gas distributor (not shown) and a gas distribution pipeline (not shown) to supply process gas to each area of ​​the nozzle unit 140.

[0088] The gas distributor distributes the process gas supplied from the second gas supply source 161 to each area of ​​the shower head unit 140. Such a gas distributor may be connected to the second gas supply source 161 through a second gas supply line 162.

[0089] The gas distribution line connects the gas distributor and each area of ​​the showerhead unit 140. The gas distribution line may deliver the process gas distributed by the gas distributor to each area of ​​the showerhead unit 140.

[0090] The second gas supply unit 160 may further include a second gas supply source (not shown) for supplying a deposition gas.

[0091] The second gas supply source supplies deposition gas to the showerhead unit 140 to protect the side of the pattern of the substrate W and enable anisotropic etching. The second gas supply source may supply a gas such as C 4 F 8 , C 2 F4 The gas is used as the deposition gas.

[0092] The liner 170 (or wall-liner) is used to protect the inner surface of the housing 110 from arc discharge generated in the process of exciting the process gas and impurities generated in the substrate processing process. Such a liner 170 may be disposed inside the housing 110 and may have a cylindrical shape with upper and lower portions opened, respectively.

[0093] The gasket 170 may be disposed adjacent to the inner wall of the housing 110. Such a gasket 170 may include a support ring 171 disposed thereon. The support ring 171 is formed to protrude from the upper portion of the gasket 170 toward the outer side direction (i.e., the first direction 10), and supports the gasket 170 by abutting against the upper end of the housing 110.

[0094] The baffle unit 180 is used to exhaust process byproducts of plasma, unreacted gas, etc. The baffle unit 180 may be disposed between an inner wall of the housing 110 and the support unit 120 .

[0095] The baffle unit 180 may have a ring shape, and may include a plurality of through holes penetrating in a vertical direction, ie, the third direction 30. The baffle unit 180 may control the flow of the process gas according to the number and shape of the through holes 181.

[0096] Next, a method of controlling the gradients of the central region and the edge region of the substrate W by the impedance changes of the central electrode and the edge electrode constituting the lower electrode will be described.

[0097] Figure 3 FIG. 1 is a cross-sectional view schematically showing the structure of an electrostatic chuck according to an embodiment of the present invention.

[0098] Reference Figure 3 The electrostatic chuck 122 may include a dielectric plate 210 , a lower electrode 220 , an AC power source 230 , a first heater 240 , a second heater 250 , a first filter 260 , and a second filter 270 .

[0099] The dielectric plate 210 constitutes the main body of the electrostatic chuck 122. The dielectric plate 210 may be provided as a disk-shaped dielectric substance.

[0100] The substrate W may be placed on the upper surface of the dielectric plate 210 . The upper surface of the dielectric plate 210 may have a radius smaller than that of the substrate W. An edge region of the substrate W may be located outside the dielectric plate 210 .

[0101] The lower electrode 220 may be applied with power (eg, RF power) from the lower power source 133. For example, the power may have one or more RF frequencies.

[0102] The AC power source 230 provides an AC signal to the first heater 240 and the second heater 250. The AC power source 230 may provide an AC signal of 50 Hz to 60 Hz to generate heat in the first heater 240 and the second heater 250. The AC power source 230 may provide an AC signal to the first heater 240 through a first filter 260. The AC power source 230 may provide an AC signal to the second heater 250 through a second filter 270.

[0103] The first heater 240 and the second heater 250 generate heat by using an AC signal provided from the AC power source 230. A plurality of first heaters 240 and a plurality of second heaters 250 may be disposed over the entire area of ​​the dielectric plate 210 to heat the entire surface of the substrate W.

[0104] like Figure 4 As shown, the first heater 240 and the second heater 250 may be concentrically disposed along the radial direction of the dielectric plate 210. Here, the heater disposed in the central area 310 of the dielectric plate 210 is defined as the first heater 240, and the heater disposed in the edge area 320 of the dielectric plate 210 is defined as the second heater 250. Figure 4 is a plan view showing a heating member of an electrostatic chuck according to an embodiment of the present invention.

[0105] In addition, in the above description, the substrate W is divided into a central area and an edge area, and the heating member 124 also includes a first heater 240 and a second heater 250 accordingly. However, the present invention is not limited thereto. The heating member 124 may be composed of more than three heaters, in which case the area of ​​the substrate W may also be divided corresponding to the number of heaters.

[0106] The first filter 260 is connected between the AC power source 230 and the first heater 240. Such a first filter 260 allows an AC signal flowing between the AC power source 230 and the first heater 240 to pass therethrough and blocks a noise signal flowing from the first heater 240 to the AC power source 230.

[0107] The second filter 270 is connected between the AC power source 230 and the second heater 250. The second filter 270 allows an AC signal flowing between the AC power source 230 and the second heater 250 to pass therethrough and blocks a noise signal flowing from the second heater 250 to the AC power source 230.

[0108] The first filter 260 and the second filter 270 may include a first capacitor 261 and a second capacitor 271, respectively. In this embodiment, the first capacitor 261 and the second capacitor 271 may be used to control the gradient of the central region and the edge region of the substrate W. This will be described below.

[0109] Figure 5 is a first exemplary diagram for explaining a method for controlling the gradient of the central region and the edge region of a substrate according to an embodiment of the present invention. Figure 5 Provide explanation.

[0110] The first capacitor 261 is connected to the first heater 240. Such a first capacitor 261 may be implemented as a variable capacitor.

[0111] The second capacitor 271 is connected to the second heater 250. Such a second capacitor 271 may also be implemented as a variable capacitor like the first capacitor 261.

[0112] In this embodiment, by adjusting the capacitance of the first capacitor 261 and the capacitance of the second capacitor 271, the impedance of the central region (hereinafter referred to as the central electrode) and the edge region (hereinafter referred to as the edge electrode) of the lower electrode 220 can be adjusted.

[0113] For example, when the etch rate of the edge area of ​​the substrate W is higher than the etch rate of the central area of ​​the substrate W, the impedance on the first heater 240 side can be reduced by increasing the capacitance of the first capacitor 261, thereby controlling the etch rates of the central area and the edge area of ​​the substrate W to remain constant.

[0114] At this time, the impedance of the second heater 250 side may be increased by reducing the capacitance of the second capacitor 271 , thereby controlling the etching rates of the central region and the edge region of the substrate W to be constant.

[0115] In addition, when the etching rate of the central area of ​​the substrate W is higher than the etching rate of the edge area of ​​the substrate W, the impedance on the second heater 250 side can be reduced by increasing the capacitance of the second capacitor 271, thereby controlling the etching rates of the central area and the edge area of ​​the substrate W to remain constant.

[0116] At this time, the impedance of the first heater 240 side may be increased by reducing the capacitance of the first capacitor 261 , thereby controlling the etching rates of the central region and the edge region of the substrate W to be constant.

[0117] In addition, in this embodiment, the etching rates of the central region and the edge region of the substrate W may be controlled to be constant by changing the voltage on the first heater 240 side and the voltage on the second heater 250 side.

[0118] In addition, Figure 5 , another line connecting the AC power source 230 and the first heater 240, and another line connecting the AC power source 230 and the second heater 250, respectively, represents a heater line.

[0119] In addition, in this embodiment, after measuring the etching rates of the central region and the edge region of the substrate W, the capacitance of the first capacitor 261 and the capacitance of the second capacitor 271 may be adjusted based on the measurement results. Figure 6 As shown, the substrate processing apparatus 100 may further include a control unit 410 .

[0120] Figure 6 is a second exemplary diagram for explaining a method for controlling the gradient of the central region and the edge region of a substrate according to an embodiment of the present invention. Figure 6 Provide explanation.

[0121] The control unit 410 adjusts the capacitance of the first capacitor 261 and the capacitance of the second capacitor 271 based on the measured etching rate of each region of the substrate W. For example, the control unit 410 may adjust at least one of the capacitance of the first capacitor 261 and the capacitance of the second capacitor 271, and thereby may adjust at least one of the impedance of the central electrode and the impedance of the edge electrode.

[0122] Above, refer to Figures 3 to 6 The electrostatic chuck 122 according to one embodiment of the present invention is described. In this embodiment, after measuring the etching rates of the central region and the edge region of the substrate W, the capacitance of the first capacitor 261 and the capacitance of the second capacitor 271 are adjusted by the control unit 410, so that the gradient of the central region and the edge region of the substrate W is controlled by the impedance change of the central electrode and the edge electrode constituting the lower electrode 220.

[0123] In this embodiment, the following effects can be obtained by such a structure.

[0124] First, the etching rate of each region of the substrate W may be controlled by controlling the impedance of the lower electrode 220 , so that etching uniformity may be improved.

[0125] Second, since the heater zone of the electrostatic chuck 122 is used, it can be easily realized.

[0126] Third, the maintenance cost of the substrate processing apparatus 100 can be reduced, and the use time of the apparatus can be extended, that is, the PM cycle can be extended.

[0127] Fourthly, by improving the mean time between cleaning (MTBC: Mean Time Between Cleaning) of the substrate processing apparatus 100 , productivity can be improved.

[0128] Next, the structure of the substrate processing apparatus 500 when the plasma generating unit 130 uses a capacitively coupled plasma (CCP) source will be described.

[0129] Figure 7 FIG. 1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment of the present invention. Figure 7 Provide explanation.

[0130] like Figure 7 As shown, the substrate processing apparatus 500 may include a housing 110 , a support unit 120 , a plasma generating unit 130 , a showerhead unit 140 , a first gas supply unit 150 , a second gas supply unit 160 , a pad 170 , and a baffle unit 180 .

[0131] The housing 110, the support unit 120, the nozzle unit 140, the first gas supply unit 150, the second gas supply unit 160, the gasket 170, the baffle unit 180, etc. have been referred to in Figure 1 The detailed description is omitted.

[0132] In addition, in the case of the support unit 120, refer to Figures 3 to 6 The description is also applicable to Figure 7 A substrate processing apparatus 500 is provided.

[0133] Therefore, the comparison Figure 7 The substrate processing apparatus 500 and Figure 1 The substrate processing apparatus 100 is shown in FIG. 1 , and only the different parts are described.

[0134] When the plasma generating unit 130 uses a capacitively coupled plasma (CCP) source, the showerhead unit 140 may be used as an upper electrode, and the electrostatic chuck 122 may be used as a lower electrode. At this time, the upper power supply 131 may apply power to the showerhead unit 140.

[0135] The embodiments of the present invention are described above with reference to the accompanying drawings, but those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

Claims

1. A substrate processing device, comprising: case; a showerhead unit disposed on an upper side of the interior of the housing and introducing a process gas for processing a substrate into the interior of the housing; a supporting unit, disposed at the inner lower side of the housing and having an electrostatic chuck for placing the substrate; Wherein, the electrostatic chuck comprises: A dielectric plate constituting the main body; a first heater for heating a first region of the dielectric plate; a first capacitor connected to the first heater; a second heater for heating a second region of the dielectric plate; a second capacitor connected to the second heater; and a control unit that adjusts the magnitude of a voltage applied by the AC power source to two terminals of the first heater and two terminals of the second heater by adjusting the capacitance of the first capacitor and the capacitance of the second capacitor to control an etching rate by region; wherein, when the etching rate of the first area of ​​the substrate is higher than the etching rate of the second area of ​​the substrate, the control unit controls the etching rate by area by reducing the capacitance of the first capacitor or increasing the capacitance of the second capacitor, and When an etching rate of the second region of the substrate is higher than an etching rate of the first region of the substrate, the control unit controls the etching rate by region by increasing the capacitance of the first capacitor or decreasing the capacitance of the second capacitor.

2. The substrate processing apparatus according to claim 1, wherein: At least one of the first capacitor and the second capacitor is a variable capacitor.

3. The substrate processing apparatus according to claim 1, wherein: The electrostatic chuck further comprises: a first filter disposed between the AC power source and the first heater and configured to remove a noise signal flowing from the first heater to the AC power source; and a second filter, disposed between the AC power source and the second heater, and configured to remove a noise signal flowing from the second heater to the AC power source, The first capacitor and the second capacitor are connected to the first heater and the second heater through the first filter and the second filter, respectively.

4. The substrate processing apparatus according to claim 1, wherein: The control section controls impedances respectively applied to the first heater and the second heater based on the etching rate by area.

5. A substrate support unit, comprising: an electrostatic chuck for placing a substrate to be etched using plasma; A base, disposed at the lower portion of the electrostatic chuck and used to support the electrostatic chuck; as well as a ring assembly disposed on a side surface of the electrostatic chuck to focus plasma onto the substrate, Wherein, the electrostatic chuck comprises: A dielectric plate constituting the main body; a first heater for heating a first region of the dielectric plate; a first capacitor connected to the first heater; a second heater for heating a second region of the dielectric plate; a second capacitor connected to the second heater; and a control unit that adjusts the magnitude of a voltage applied by the AC power source to two terminals of the first heater and two terminals of the second heater by adjusting the capacitance of the first capacitor and the capacitance of the second capacitor to control an etching rate by region; wherein, when the etching rate of the first area of ​​the substrate is higher than the etching rate of the second area of ​​the substrate, the control unit controls the etching rate by area by reducing the capacitance of the first capacitor or increasing the capacitance of the second capacitor, and When an etching rate of the second region of the substrate is higher than an etching rate of the first region of the substrate, the control unit controls the etching rate by region by increasing the capacitance of the first capacitor or decreasing the capacitance of the second capacitor.

6. The substrate supporting unit according to claim 5, wherein: At least one of the first capacitor and the second capacitor is a variable capacitor.

7. The substrate supporting unit according to claim 5, wherein: The control section controls impedances respectively applied to the first heater and the second heater based on the etching rate by area.

8. A substrate processing device, comprising: case; a showerhead unit disposed on an upper side of the interior of the housing and introducing a process gas for processing a substrate into the interior of the housing; as well as a supporting unit, disposed at the inner lower side of the housing and having an electrostatic chuck for placing the substrate; Wherein, the electrostatic chuck comprises: a dielectric plate comprising a first heater and a second heater, the first heater being used to heat a first region of the dielectric plate and the second heater being used to heat a second region of the dielectric plate; and The lower electrode is applied with RF power. Wherein, the substrate processing device further comprises: a lower power source for applying the RF power to the lower electrode; a first filter comprising a first variable capacitor; a second filter including a second variable capacitor; an AC power source that provides a first AC signal to the first heater through the first filter and provides a second AC signal to the second heater through the second filter; and a control unit configured to adjust at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor to adjust the magnitude of at least one of the first AC signal supplied to the two terminals of the first heater and the second AC signal supplied to the two terminals of the second heater to control the etching rate by area; When the etching rate of the first area of ​​the substrate is higher than the etching rate of the second area of ​​the substrate, the control unit controls the etching rate by area by reducing the capacitance of the first variable capacitor or increasing the capacitance of the second variable capacitor, and When an etching rate of the second region of the substrate is higher than an etching rate of the first region of the substrate, the control section controls the etching rate by region by increasing the capacitance of the first variable capacitor or decreasing the capacitance of the second variable capacitor.

9. The substrate processing apparatus according to claim 8, wherein: At least one of the impedance of the central region and the impedance of the edge region of the lower electrode is adjusted by adjusting at least one of the capacitance of the first variable capacitor and the capacitance of the second variable capacitor through the control unit.

10. The substrate processing apparatus according to claim 8, wherein: The control section controls at least one of a capacitance of the first variable capacitor and a capacitance of the second variable capacitor based on the etching rate.

11. The substrate processing apparatus according to claim 8, wherein: The first filter is disposed between the AC power source and the first heater and removes a noise signal flowing from the first heater to the AC power source, and The second filter is provided between the AC power source and the second heater, and removes a noise signal flowing from the second heater to the AC power source.

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