Substrate processing equipment

Abstract

A substrate processing apparatus capable of processing a thin film by uniform exhaust to improve quality, comprising: a substrate support unit; a processing unit on the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; an exhaust port connected to at least a part of the exhaust unit; and a flow control unit provided in an exhaust passage from a space inside the exhaust unit to the exhaust port.

Description

[0001] Cross - reference to Related Applications

[0002] This application claims the benefit of U.S. Patent Application No. 62 / 896,551, filed on September 5, 2019, with the United States Patent and Trademark Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background Art

[0004] The production per hour is an important factor in semiconductor device production and precise control of thin films. A single - wafer substrate processing apparatus is advantageous for individual precision control of thin films, and a batch substrate processing apparatus can process a large number of substrates simultaneously.

[0005] To simultaneously achieve an increase in productivity and precise control of individual substrates, a multi - reactor chamber on which a plurality of individual reactors are mounted is used. In the multi - reactor chamber, gas is supplied to the reactors through the center at the top of each individual reactor, and the supplied gas is discharged through the center at the top of the reactor or through the side of the reactor.

[0006] Meanwhile, in the structure of the multi - reactor chamber, in the case of a structure in which gas is discharged from a part of the reactor, the air flow is concentrated on that part of the reactor, so that the film profile is uneven and tends to shift to one side. In particular, when the exhaust structure is asymmetrically arranged, the film thickness on one side of the substrate is different from the film thickness on the other side of the substrate, and the uniformity of the film on the substrate is reduced. Summary of the Invention

[0007] One or more embodiments include a substrate processing apparatus having an exhaust structure that allows the thin film of the processed substrate to have uniform characteristics over the entire substrate.

[0008] Other aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] According to one or more embodiments, a substrate processing apparatus may include: a substrate support unit; a processing unit on the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; an exhaust port connected to at least a part of the exhaust unit; and a flow control unit disposed in an exhaust passage from a space inside the exhaust unit to the exhaust port.

[0010] According to an example of the substrate processing apparatus, the flow control unit may be adjacent to the exhaust port.

[0011] According to another example of the substrate processing apparatus, the exhaust unit may extend to form an exhaust space surrounding the reaction space, and an exhaust port may be provided to communicate with a part of the exhaust space.

[0012] According to another example of the substrate processing apparatus, the flow control unit may be configured to prevent the airflow in the exhaust space from concentrating at the exhaust port.

[0013] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a support configured to support the processing unit and the exhaust unit; and a guiding unit on the support, wherein the flow control unit may be configured to be movable on the guiding unit.

[0014] According to another example of the substrate processing apparatus, the support and the guiding unit may be implemented as an integral structure.

[0015] According to another example of the substrate processing apparatus, at least one of the flow control unit and the guiding unit may include a groove for preventing separation between the flow control unit and the guiding unit.

[0016] According to another example of the substrate processing apparatus, the exhaust unit may further include: a boundary wall defining a side of the reaction space; an outer wall parallel to the partition wall; and a connecting wall extending to connect the boundary wall to the outer wall. The connecting wall may provide a contact surface between the exhaust unit and the processing unit.

[0017] According to another example of the substrate processing apparatus, the flow control unit may include at least one through hole. At least a part of the through hole may extend toward the exhaust port.

[0018] According to another example of the substrate processing apparatus, the through holes may be arranged in multiple layers.

[0019] According to another example of the substrate processing apparatus, the flow control unit may include a first surface facing the exhaust port and a second surface different from the first surface, and the through hole may extend through the first surface and the second surface.

[0020] According to another example of the substrate processing apparatus, the cross-sectional area of a first part of the through hole may be different from the cross-sectional area of a second part of the through hole.

[0021] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a force applying unit configured to generate a force for moving the flow control unit.

[0022] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a receiving unit for receiving the force applying unit; and a rolling unit between the force applying unit and the receiving unit.

[0023] According to another example of a substrate processing apparatus, the force for moving the flow control unit is a magnetic force, and the force application unit may include a magnetic force application unit.

[0024] According to another example of a substrate processing apparatus, the magnetic force application unit may include an electromagnet, and the substrate processing apparatus may further include a controller configured to control the electromagnet.

[0025] According to another example of a substrate processing apparatus, the controller may be configured to supply current to the electromagnet during maintenance of the substrate processing apparatus and stop supplying current to the electromagnet during processing of the substrate processing apparatus.

[0026] According to one or more embodiments, a substrate processing apparatus includes: a processing unit; an exhaust unit connected to a reaction space below the processing unit; and a flow control unit disposed in the exhaust unit and including at least one through hole.

[0027] According to an example of a substrate processing apparatus, the substrate processing apparatus may further include a force application unit disposed separately from the flow control unit and configured to generate a force for moving the flow control unit.

[0028] According to one or more embodiments, a substrate processing apparatus includes: an exhaust unit connected to a reaction space; an exhaust port connected to at least a portion of the exhaust unit; a flow control unit disposed in the exhaust unit and including at least one through hole; and a force application unit configured to generate a force for moving the flow control unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 and 2 is a view of a substrate processing apparatus according to an embodiment. Figure 1 is a plan view of the substrate processing apparatus, Figure 2 is along Figure 1 a cross-sectional view taken along line II-II'.

[0031] Figure 3 is a view of a part of a substrate processing apparatus according to an embodiment, excluding the cover and the exhaust port.

[0032] Figure 4 is a view of a part of the substrate processing apparatus viewed from a first direction Figure 3 and Figure 5 is a view of a part of the substrate processing apparatus viewed from a second direction Figure 3 of

[0033] Figure 6 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0034] Figure 7 (a) through 7(e) are views of various forms of a flow control unit and through-holes included in the flow control unit.

[0035] Figure 8 is a plan view of a substrate processing apparatus according to some embodiments.

[0036] Figure 9 is a cross-sectional view taken along line Figure 8 A-A' of.

[0037] Figures 10 to 12 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0038] Figure 13 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. Detailed Description

[0039] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals always refer to like elements. In this regard, these embodiments may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described only by referring to the accompanying drawings to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. When an expression such as "at least one of" is presented before a list of elements, it modifies the entire list of elements and not the individual elements in the list.

[0040] The terms used herein are for the purpose of describing particular embodiments and are not intended to limit the disclosure. As used herein, the singular forms "a," "an," and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that the terms "comprises," "comprising," and variations thereof specify the presence of the stated features, integers, steps, processes, components, parts, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, processes, components, parts, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0041] It will be understood that although terms such as first, second, etc. may be used herein to describe various components, parts, regions, layers, and / or sections, these components, parts, regions, layers, and / or sections should not be limited by these terms. These terms do not denote any order, quantity, or importance, but are only used to distinguish between individual components, regions, layers, and / or sections. Thus, without departing from the teachings of the embodiments, the first component, part, region, layer, or section discussed below may be referred to as the second component, part, region, layer, or section.

[0042] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically illustrated. In the drawings, due to, for example, manufacturing techniques and / or tolerances, variations from the shown shapes can be expected. Accordingly, embodiments of the present disclosure should not be construed as being limited to the specific shapes of the regions shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0043] Figure 1 and 2 are views of a substrate processing apparatus according to an embodiment. Figure 1 is a plan view of the substrate processing apparatus, Figure 2 is along Figure 1 a sectional view taken along line II-II' of.

[0044] Referring to Figure 1 and 2 the substrate processing apparatus may include a partition wall 100, a processing unit 110, an exhaust unit 120, an exhaust port 130, a flow control unit 140, a substrate support unit 150, and a force application unit 160. The substrate processing apparatus may include a reaction space 51 and an exhaust space 55 connected to the reaction space 51. The exhaust space 55 may be formed to surround the reaction space 51.

[0045] The partition wall 100 is a chamber for accommodating the substrate support unit 150 and may also be referred to as a chamber. In one embodiment, a reactor including the reaction space 51 may be referred to as an inner chamber, and the overall structure of the substrate processing apparatus surrounding a plurality of reactors (e.g., four reactors) may be referred to as an outer chamber. An exhaust pipeline 18 may be provided in the partition wall 100. In some embodiments, the exhaust pipeline 18 may be formed to extend along the inside of the sidewall of the partition wall 100. In one embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent to the first surface, and the exhaust pipeline 18 may extend along the corner between the first surface and the second surface. In other embodiments, the exhaust pipeline 18 may be formed to extend along the inside of the lower wall of the partition wall 100.

[0046] The processing unit 110 may be located on a substrate support unit 150 configured to support a substrate. A reaction space 51 may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining an upper surface of the reaction space 51. In other words, the first cover on the substrate support unit 150 may include at least one processing unit 110.

[0047] The processing unit 110 may include components that perform appropriate functions according to the functions of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

[0048] The processing unit 110 may be a conductor and may serve as an electrode for generating plasma. That is, the processing unit 110 itself may serve as one of the electrodes for generating plasma. Hereinafter, the processing unit 110 in this manner (the manner of using the processing unit 110 itself as an electrode) will be referred to as a gas supply electrode.

[0049] The substrate support unit 150 may be configured to provide a region where an object to be processed (not shown), such as a semiconductor or display substrate, is located. The substrate support unit 150 may be supported by a support (not shown) capable of vertical and rotational movement. In addition, the substrate support unit 150 may be a conductor and may serve as an electrode for generating plasma (i.e., the opposite electrode of the gas supply electrode).

[0050] The exhaust unit 120 may be located between the processing unit 110 and the support TLD. The exhaust unit 120 may extend to surround the reaction space 51. The exhaust unit 120 may be implemented by a non-conductive material such as an insulator. On the other hand, the support TLD may be implemented by a conductive material such as a conductor.

[0051] In one embodiment, the exhaust unit 120 may serve as a second cover defining a side surface of the reaction space 51. The second cover including the exhaust unit 120 may include an exhaust space 55 connected to the reaction space 51. Therefore, the exhaust unit 120 may provide the exhaust space 55. In addition, the exhaust unit 120 may provide a space for accommodating the processing unit 110. When the processing unit 110 is accommodated in this space, the processing unit 110 may be in contact with the exhaust unit 120.

[0052] The exhaust unit 120 may include a partition wall W between the reaction space 51 and the exhaust space 55. The first surface (e.g., the outer surface) of the boundary wall W may define the reaction space 51 and the second surface of the boundary wall W (i.e., the inner surface which is the surface facing the first surface) may define the exhaust space 55. For example, the reaction space 51 may be defined by the first surface side of the boundary wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 which is the first cover. In other words, one side of the reaction space 51 may be defined by the boundary wall W of the exhaust unit 120.

[0053] The exhaust unit 120 may provide a part of the space for the object to be processed. For example, when the substrate processing equipment performs a deposition function, the reaction space 51 for deposition may be defined by the exhaust unit 120. In addition, the exhaust space 55 may be defined inside the exhaust unit 120.

[0054] In one example, the exhaust unit 120 may include a connecting wall C and an outer wall O extending from the boundary wall W. The outer wall O of the exhaust unit 120 is arranged parallel to the boundary wall W and may contact the support TLD. The connecting wall C of the exhaust unit 120 may extend to connect the boundary wall W to the outer wall O. The connecting wall C may provide a contact surface with the processing unit 110. The processing unit 110 which is the first cover and the exhaust unit 120 which is the second cover may contact each other through the contact surface.

[0055] The flow control unit 140 in the exhaust unit 120 may be arranged separately from the boundary wall W, the connecting wall C, and the outer wall O. For example, the flow control unit 140 and the connecting wall C may be spaced apart by a distance a from each other, and the flow control unit 140 and the outer wall O may be spaced apart by a distance b from each other.

[0056] By arranging the flow control unit 140, an exhaust pressure difference may be generated between the surface of the flow control unit 140 facing the reaction space 51 and the surface facing the exhaust port 130. This exhaust pressure difference may determine the exhaust speed and / or exhaust resistance of the gas towards the flow control unit 140. The exhaust speed and / or exhaust resistance may be affected by the above distances a and b, the shape and arrangement structure of the through holes TH of the flow control unit 140, etc.

[0057] The support TLD may contact the exhaust unit 120 to support the processing unit 110 and the exhaust unit 120. The support TLD may be supported by the partition wall 100. As described above, the support TLD may be used as a top cover supported by the partition wall 100 to cover the outer chamber, while supporting the processing unit 110 which is the first cover and the exhaust unit 120 which is the second cover.

[0058] The support member TLD can be between the partition wall 100 and the exhaust port 130. The support member TLD can include a path P of the exhaust pipe line 18 that connects the exhaust port 130 to the partition wall 100. In one embodiment, the cross-sectional area of the path P and the cross-sectional area of the exhaust pipe line 18 can be substantially the same. For example, when the path P and the exhaust pipe line 18 are formed as circles, the diameter of the path P can be the same as the diameter of the exhaust pipe line 18. In other embodiments, a sealing member (not shown) can be between the support member TLD and the partition wall. The sealing member can extend around the path P or the exhaust pipe line 18 to prevent leakage of the gas moving from the path P to the exhaust pipe line 18.

[0059] The support member TLD can be between the partition wall 100 and a cover (such as a second cover including the exhaust unit 120). The flow control ring FCR can be on the support member TLD. In addition, the flow control ring FCR can be between the support member TLD and the substrate support unit 150. The flow control ring FCR can be slidably located on the support member TLD. The flow control ring FCR can be spaced apart from the substrate support unit 150 to form a gap G, and the pressure balance between the reaction space 51 and the inner space of the outer chamber can be controlled by adjusting the gap G.

[0060] To achieve the above pressure balance, a filling gas can be introduced from the lower space below the support member TLD and the substrate support unit 150 toward the reaction space 51. According to the introduction of the filling gas, an air curtain can be formed in the gap G between the substrate support unit 150 and the flow control ring FCR. Due to this air curtain, the gas in the reaction space 51 can be prevented from flowing into the lower space.

[0061] In one embodiment, the filling gas can be different from the gas supplied through the processing unit 110. For example, the filling gas can be an inert gas such as nitrogen or argon. In some embodiments, the discharge rate of the filling gas can be lower than the discharge rate of the gas supplied to the reaction space 51 through the processing unit 110. When plasma is generated in the reaction space 51, the filling gas with a lower discharge rate can prevent parasitic plasma from being generated in the lower space below the support member TLD and the substrate support unit 150. The partition wall W can provide a space E that connects the reaction space 51 to the exhaust space 55. For example, the space E can be formed between the exhaust unit 120 and the flow control ring FCR. The space E can be a channel between the reaction space 51 and the exhaust space 55. Therefore, the reaction space 51 and the exhaust space 55 can communicate with each other through this channel.

[0062] Under this structure, the gas in the reaction space 51 is discharged laterally through the exhaust space 55. That is, the gas in the reaction space 51 can be discharged through the exhaust space 55, the opening OP, the channel in the exhaust port 130, the path P of the support member TLD, and the exhaust pipe line 18 of the partition wall 100.

[0063] As part of the exhaust unit 120 of the second lid, it can communicate with the exhaust port 130. The exhaust port 130 can be connected to at least a part of the exhaust unit 120. For example, the exhaust port 130 can be arranged to communicate with a part of the periphery of the exhaust unit 120. Therefore, the gas in a part of the exhaust space 55 can be discharged through the exhaust port 130.

[0064] More specifically, the gas supplied to the center of the reaction space 51 by the processing unit 110 can be radially dispersed. Therefore, the radially dispersed gas can move toward the exhaust space 55 of the exhaust unit 120. Since the exhaust port 130 is connected to a part of the periphery of the exhaust unit 120, the radially dispersed gas toward the exhaust space 55 can move along the internal path of the exhaust unit 120 toward the exhaust space 55. The gas moving along the internal path of the exhaust unit 120 can be discharged through the opening OP and the exhaust port 130.

[0065] The exhaust port 130 can include a channel extending in a first direction toward the exhaust unit 120 and a second direction different from the first direction. In an exemplary embodiment, the exhaust port 130 can have an L-shaped or L-like channel formed therein, so that the gas in the exhaust space 55 can flow laterally toward the exhaust port 130 and can be discharged downward. In another example, the gas in the exhaust space 55 can flow laterally and can be discharged upward. The gas discharged through the exhaust port 130 can be transferred to an exhaust pump (not shown) through the exhaust pipeline 18, and the gas can be discharged to the outside through the exhaust pump (not shown).

[0066] The flow control unit 140 can be arranged in the exhaust channel (the channel from the space inside the exhaust unit 120 to the exhaust port 130). For example, the flow control unit 140 can be in the exhaust unit 120. The flow control unit 140 can be in the space between the gap E and the opening OP.

[0067] As Figure 1 shown, the flow control unit 140 can be arranged adjacent to the exhaust port 130. The arrangement of the flow control unit 140 serves as a physical barrier for the gas to move toward the exhaust port 130. Therefore, the exhaust deflection in the exhaust space 55 (i.e., the phenomenon that the air flow is concentrated in the exhaust port 130) can be alleviated.

[0068] In some embodiments, the flow control unit 140 may include at least one through-hole TH. The exhaust resistance of the gas discharged toward the exhaust port 130 can be controlled by using the through-hole TH. In addition, as described above, the exhaust resistance of the discharged gas can also be controlled by the distance (e.g., distance a) between the flow control unit 140 and the connection wall C and / or the distance (e.g., distance b) between the flow control unit 140 and the outer wall O.

[0069] The flow control unit 140 may be movable on the guiding unit GU. For this purpose, for example, the flow control unit 140 may include a main body 141, a coupling part 143, and a moving part 145.

[0070] The main body 141 is a component in the exhaust space 55 and may be configured to affect the flow of the first gas supplied from the reaction space 11 toward the exhaust space 55 and the second gas moving around the exhaust space 55. For example, through the main body 141, the flow control unit 140 can prevent the gas (e.g., the second gas) flow in the exhaust space 55 from concentrating at the exhaust port 130.

[0071] The main body 141 may be arranged to occupy at least a part of the exhaust space 55. For example, the main body 141 may have a shape protruding from the guiding unit GU on the support TLD. In some embodiments, the main body 141 may extend in the circumferential direction of the exhaust space 55. In another embodiment, the main body 141 may include at least one through-hole TH. The gas supplied from the reaction space 51 may move through the through-hole TH to the opening OP and the exhaust port 130.

[0072] The coupling part 143 may provide the coupling between the flow control unit 140 and the guiding unit GU. For example, the guiding unit GU on the support TLD may include a groove, and the coupling part 143 may be inserted into the groove. In some embodiments, the coupling part 143 may have a shape corresponding to the groove. For example, the groove of the guiding unit GU may have a T shape, and the coupling part 143 may also have a T shape to correspond to the groove.

[0073] The moving part 145 may be between the coupling part 143 and the guiding unit GU. The moving part 145 may be configured to reduce the frictional force between the coupling part 143 and the guiding unit GU. For example, the moving part 145 may include a rotatable component such as a bearing or a wheel. The moving part 145 may move the flow control unit 140 along the circumference of the exhaust space 55 on the guiding unit GU.

[0074] It should be noted that although the coupling part 143 and the moving part 145 are shown as components of the flow control unit 140 in the drawings, the inventive concept is not limited thereto. The coupling part 143 and the moving part 145 may be components of the guiding unit GU. For example, in some embodiments, the guiding unit GU may include a engaging part protruding in a certain shape, and the flow control unit 140 may include a groove having a shape corresponding to that of the coupling part. In other words, at least one of the flow control unit 140 and the guiding unit GU may include a groove for preventing separation between the flow control unit 140 and the guiding unit GU.

[0075] In an alternative embodiment, the support TLD and the guiding unit GU may be implemented as an integral structure. In another embodiment, the support TLD and the guiding unit GU may be implemented as separate structures. In this case, the aforementioned anti-separation groove will be implemented in at least one of the flow control unit 140 and the support TLD.

[0076] The through hole TH of the main body 141 may extend toward the exhaust port 130. In the case where the main body 141 does not have the through hole TH, turbulence occurs when the gas in the reaction space 51 is discharged to the exhaust port 130. The through hole TH formed in the main body 141 can reduce the generation of such turbulence.

[0077] The through hole TH may be formed in various shapes. For example, the through hole TH may be arranged in a double layer. The main body 141 of the flow control unit 140 may include a first surface facing the exhaust port 130 and a second surface different from the first surface, and the through hole TH may extend through the first surface and the second surface.

[0078] In some embodiments, the second surface may be the surface facing the reaction space 51. In this case, the through hole TH may extend in the direction from the reaction space 51 toward the exhaust port 130. In another embodiment, the second surface may be the surface facing the direction along which the exhaust space 55 extends. In this case, the through hole TH may include a first part extending toward the exhaust port 130 and a second part extending in the extending direction of the exhaust space 55.

[0079] In some examples, the through hole TH may be formed to have the same cross-sectional area (e.g., cylindrical) as a whole. In another example, the through hole TH may be partially formed to have different cross-sectional areas. That is, the cross-sectional area of the first part of the through hole TH may be different from the cross-sectional area of the second part of the through hole TH. For example, as Figure 2 shown, the cross-sectional area of the part of the through hole TH formed on the first surface facing the exhaust port 130 may be larger than the cross-sectional area of the part of the through hole TH formed on the second surface facing the reaction space 51.

[0080] In another example, the cross-sectional areas of both ends of the through hole TH may be larger than the cross-sectional area of the central portion of the through hole TH, so that a through hole TH having a strip-shaped cross-sectional shape can be formed. In another example, the cross-sectional areas of both ends of the through hole TH may be smaller than the cross-sectional area of the central portion of the through hole TH, so that a through hole TH having a rhombus-shaped cross-sectional shape can be formed.

[0081] The shape of the through hole TH serves as a factor for controlling the exhaust resistance. In other words, the exhaust resistance of the gas toward the flow control unit 140 can be adjusted by adjusting the shape of the inlet portion and / or the central portion of the through hole TH.

[0082] The force application unit 160 may be configured to generate a force for moving the flow control unit 140. The force application unit 160 may be separate from the flow control unit 140. For example, the force application unit 160 may be located in the partition wall 100 at the bottom of the flow control unit 140. Therefore, contact between the gas in the reaction space 51 and the exhaust space 55 and the force application unit 160 can be prevented.

[0083] The force application unit 160 may be accommodated in a receiving unit 170 provided in the partition wall 100. The receiving unit 170 may be a structure integral with the partition wall 100, or may be a separate structure that can be coupled to the partition wall 100. By implementing the receiving unit 170 as a separate structure from the partition wall 100, the maintenance of the force application unit 160 can be made easier. For example, for the maintenance of the force application unit 160, the processing unit 110 serving as the first cover and the exhaust unit 120 serving as the second cover can be lifted, and the receiving unit 170 can be separated from the partition wall 100.

[0084] In a further embodiment, the rolling unit 165 may be between the force application unit 160 and the receiving unit 170. The rolling unit 165 may be configured to be able to roll in the extending direction of the guiding unit GU (i.e., the circumferential direction of the exhaust space 55). For example, the rolling unit 165 may include a bearing and / or a wheel having one degree of freedom. The rolling unit 165 may be coupled to the force application unit 160. In another embodiment, the rolling unit 165 may be coupled to the receiving unit. In yet another embodiment, the rolling unit 165 may be coupled to the extension portion 163.

[0085] The force application unit 160 may generate a magnetic force to move the flow control unit 140. For example, the flow control unit 140 may include a metallic material, and the force application unit 160 may include a magnetic force application unit 161 that applies a magnetic force to the metallic material. By the magnetic force generated by the magnetic force application unit 161, the flow control unit 140 can move together in the direction in which the force application unit 160 moves.

[0086] In some embodiments, when the force application unit 160 is implemented as a magnetic force application unit 161 that applies a magnetic force, the magnetic force application unit 161 may include an electromagnet that acts as a magnet only when a current is applied. In this case, the substrate processing apparatus may further include a controller (not shown) configured to control the electromagnet.

[0087] In another embodiment, the controller may be configured to supply current to the electromagnet during maintenance of the substrate processing apparatus. Further, the controller may be configured to interrupt the supply of current to the electromagnet during processing of the substrate processing apparatus. Accordingly, the influence of the force application unit 160 (e.g., the magnetic field applied to the exhaust space) during processing can be blocked.

[0088] For example, during maintenance of the substrate processing apparatus, an operator may move the extension part 163 coupled to the magnetic force application unit 161. Since the magnetic force application unit 161 implemented by the electromagnet generates a magnetic force during maintenance, the magnetic force application unit 161 and the flow control unit 140 fastened by the magnetic force may move together by the movement of the extension part 163.

[0089] When a process such as vapor deposition and / or etching is performed on a thin film, the profile of the thin film may be shifted to one side of the substrate without being symmetric with respect to the center of the substrate. Such non-uniformity of the thin film particularly occurs when the exhaust ports 130 are asymmetrically provided.

[0090] For example, in Figure 1 the case of the substrate processing apparatus shown, each of the reactors R1a, R1b, R2a, and R2b has only one exhaust port 130, such that the substrate processing apparatus has an asymmetric exhaust structure. Due to the asymmetric exhaust structure, the thin film processed in each substrate may have an asymmetric shape with respect to the center of the substrate. In particular, when processing a substrate having a complex uneven structure such as a pattern structure on its surface, the characteristics of the thin film deposited on various parts of the substrate may become non-uniform.

[0091] According to an embodiment of the inventive concept, a flow control unit is provided as a physical unit capable of controlling gas discharge in an exhaust pipe (e.g., an exhaust unit) of a reactor. The flow control unit serves as a barrier for blocking gas concentrated in the exhaust port, thereby reducing exhaust deflection. Further, through holes are formed in the flow control unit, thereby controlling the exhaust speed and exhaust resistance while minimizing the generation of turbulence around the flow control unit. Accordingly, the non-uniform performance of the thin film caused by the asymmetric exhaust structure can be improved.

[0092] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. More specifically, Figure 3Shows a part of a substrate processing apparatus other than the lid (i.e., the processing unit and the exhaust unit) (e.g., exhaust pipelines 18 and 28, connection port CP, external path EC connected to an external pump, etc.) and an exhaust port. Figure 4 is a view of a part of the substrate processing apparatus as viewed from a first direction Figure 3 and Figure 5 is a view of a part of the substrate processing apparatus as viewed from a second direction. Figure 3 The substrate processing apparatus according to an embodiment may be a variant of the above-described substrate processing apparatus according to an embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0093] Referring Figures 3 to 5 to, exhaust pipelines 18 and 28 are formed in the partition wall 100. The exhaust pipelines 18 and 28 are connected to the external path EC through the connection port CP, and the external path EC is connected to the main exhaust path 211. Thus, the gas in the reaction space is discharged to the exhaust pump EP through the exhaust ports 130 and 230, the exhaust pipelines 18 and 28, the external path EC, and the main exhaust path 211.

[0094] As Figure 4 shown, two reactors R1a and R1b in the first direction use the internal exhaust pipelines 18a and 18b, while the remaining two reactors in the direction opposite to the first direction use other internal exhaust pipelines 28a and 28b. The two internal exhaust pipelines 18 and 28 are respectively connected to the external path EC through the connection ports CP and CP'. The external path EC may be implemented in one configuration or in multiple configurations.

[0095] Figure 4 Shows that four reactors use at least one external path EC, the main exhaust path 211, and the exhaust pump EP. An isolation valve 210 may be added to the main exhaust path 211. Thus, during maintenance, the isolation valve 210 can protect the exhaust pump EP from the influence of the external atmosphere. In addition, a pressure control valve (e.g., a throttle valve) may be added to the main exhaust path 211. The external path EC may be fixed so as not to move in close contact with the lower surface of the partition wall 100 of the outer chamber. In an alternative embodiment, the two internal exhaust pipelines 18 and 28 may be connected to each other within the bottom wall of the partition wall 100 of the outer chamber and directly connected to the main exhaust path 211 without an external path EC.

[0096] Referring again Figure 3 ​, the first external path EC connected to the first connection port CP can extend toward the first corner portion C1 of the outer chamber below the partition wall 100. Additionally, a second external path EC' connected to a second connection port CP' (not shown) can extend toward the second corner portion C2 of the outer chamber below the partition wall 100. An exhaust pump EP can be disposed on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC can extend from the portion extending to the first corner portion C1 to the exhaust pump EP. Moreover, the second external path EC' can extend from the portion extending to the second corner portion C2 to the exhaust pump EP.

[0097] Figure 6 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment can be a variant of the substrate processing apparatus according to the above embodiments. Hereinafter, a repeated description of the embodiments will not be given.

[0098] Referring to Figure 6 , the substrate processing apparatus can include a processing unit 14, an exhaust unit 4, and a flow control unit 15. The processing unit 14 can include components that perform appropriate functions according to the functions of the substrate processing apparatus as described above. The exhaust unit 4 can be connected to a reaction space below the processing unit 14 such that the gas in the reaction space can be discharged to an exhaust port (i.e., a pumping port) through the exhaust space of the exhaust unit 4.

[0099] As Figure 6 shown, the exhaust port (i.e., the pumping port) is located on the right side of the exhaust unit 4. Thus, when discharging the gas in the reaction space, more gas may be discharged in the direction of the exhaust port. Due to this concentration of the discharged gas, the thickness uniformity of the resulting thin film may deteriorate, and the film profile on one side may become thicker.

[0100] To overcome this problem, a flow control unit 15 can be disposed in the exhaust space 6 of the exhaust unit 4. The flow control unit 15 can be disposed in the direction of the exhaust port to directly control the airflow toward the exhaust port. Thus, the anisotropy of the gas discharged from the reaction space can be reduced, and more uniform exhaust can be achieved. In other words, the airflow discharged toward the exhaust unit 4 around the substrate can be more symmetric.

[0101] In some embodiments, the flow control unit 15 can include at least one through hole. The through hole can be configured to control the exhaust speed and exhaust resistance while minimizing the generation of turbulence around the flow control unit 15. For this purpose, the through hole can be configured to have various shapes as Figure 7 shown.

[0102] In Figure 6Among them, a heating block and a substrate support unit (such as a susceptor) on which a substrate is placed are disposed below the processing unit 14, but are omitted in the present disclosure for the sake of understanding. The flow control ring (FCR) 5 may include an outer flow control ring disposed to surround the heating block and an inner flow control ring disposed in the exhaust space 6. The airflow is shown by arrows. As described above, the gas in the reaction space may be discharged into the exhaust space 6 through the gap between the exhaust unit 4 and the flow control ring 5.

[0103] The flow control unit 15 may be mechanically fixed to the flow control ring 5, more specifically to the inner flow control ring. In some embodiments, the flow control unit 15 may be designed to move on the inner flow control ring in the exhaust space 6.

[0104] The optimal arrangement of the flow control unit 15 on the flow control ring 5 may be determined according to the type of process, the flow rate of the gas supplied to the reaction space, and the shape and arrangement of the through holes 17 in the flow control unit 15. In this case, imparting movability to the flow control unit 15 is an important process variable.

[0105] Although not shown in the drawings, in order to achieve the movability of the flow control unit 15, the substrate processing apparatus may further include a force application unit configured to generate a force for moving the flow control unit 15. The force application unit may be spaced apart from the flow control unit 15.

[0106] Figure 7 (a) to 7(e) show various forms of the flow control unit 15 and the through holes 17 included in the flow control unit 15. The flow control unit 15 may have a curved shape corresponding to the exhaust space 6. The gas in the exhaust space 6 may be discharged to the exhaust port 3 through the through holes 17. By forming the through holes 17, the exhaust speed and exhaust mode of the gas passing through the through holes 17 and discharged to the exhaust port 3 can be more precisely controlled, so that the symmetry of the gas discharge in the reaction space can be further improved.

[0107] The through holes 17 may be provided in various forms. For example, as Figure 7 (a) and 7(b) show, the through holes 17 may be cylindrical, or may have a conical shape with different inlet and outlet widths, or a dumbbell shape with a narrow middle. In addition, as Figure 7 (c) shows, the through holes 17 may be arranged in a double layer. Additionally, as Figure 7 (d) shows, the through holes 17 may include a first portion P1 extending toward the exhaust port and a second portion P2 extending in the extending direction of the exhaust space 55. Figure 7 (e) shows a first portion P1' extending toward the exhaust port, a second portion P2' extending in the extending direction of the exhaust space 55, and a third portion P3' extending toward the reaction space.

[0108] Figure 8 and 9 are views of a substrate processing apparatus according to some embodiments. Figure 8 is a plan view of the substrate processing apparatus, Figure 2 is a cross-sectional view taken along line Figure 8 A-A' of. The substrate processing apparatus according to an embodiment may be a variant of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repetitive description of the embodiment will not be given.

[0109] Referring to Figure 8 and 9 , the substrate processing apparatus may include: an exhaust unit 4 connected to a reaction space; an exhaust port including an exhaust port 3; a flow control unit 15 in the exhaust unit 4; and a magnet part 21 configured to generate a force for moving the flow control unit 15. As described above, the flow control unit 15 may include at least one through hole.

[0110] The substrate support unit including the heating block 16 may move up and down through the moving part 19. For example, when a substrate is loaded and unloaded, the heating block 16 may move up and down through the moving part 19 to form a reaction space. When the moving part 19 moves, the bellows 18 may also move up and down, thereby facilitating the up and down movement of the heating block 16.

[0111] The flow control unit 15 may be between the exhaust unit 4 and the exhaust port 3. More specifically, the flow control unit 15 may be in front of a path connecting the exhaust unit 4 and the exhaust outlet 3.

[0112] The protrusion 20 may be below the exhaust unit 4 and the exhaust outlet 3 of the chamber 1. The protrusion 20 may be disposed in a chamber space corresponding to the exhaust unit 4 and the exhaust outlet 3 in a vertical direction. The magnet part 21 and the magnet support 22 for supporting the magnet part 21 may be disposed in the protrusion 20. The horizontal movement of the magnet support 22 may be controlled by the controller 24.

[0113] The roller 23 may be between the magnet support 22 and the chamber 1 and between the magnet support 22 and the controller 24. The roller 23 may reduce the frictional force between the magnet support 22 and the chamber 1 and between the magnet support 22 and the controller, thereby facilitating the horizontal movement of the magnet support 22.

[0114] In some embodiments, the magnet support 22 may be implemented as a concavo-convex structure through the wall of the chamber 1. The position of the magnet support 22 may be supported by the concavo-convex structure, thereby preventing the separation of the magnet support 22.

[0115] The flow control unit 15 is made of a metallic material and can thus be moved in the horizontal direction by the magnet part 21. The controller 24 can control the horizontal movement of the magnet support 22 and provide a movement track for the magnet support 22. For example, when the magnet support 22 moves horizontally, the flow control unit 15 can move together in the movement direction of the magnet support 22 by the magnetic force of the magnet part 21. The movement speed of the flow control unit 15 can be determined according to the distance d between the flow control unit 15 and the magnet part 21. The distance d can be determined experimentally within the range of the magnetic force.

[0116] In addition to the permanent magnet, the magnet part 21 can also be implemented as an electromagnet. That is, by implementing the magnet part 21 with an electromagnet that generates a magnetic force only when current is supplied, the influence of the metal precursor supplied during the metal thin film process on the flow control unit 15 can be minimized. For example, during the maintenance of the chamber, current is supplied to generate a magnetic force to correct the position of the flow control unit 15. However, during the process, the influence of the metal thin film process on the flow control unit 15 can be prevented by stopping the current supply and not generating a magnetic force.

[0117] According to an embodiment of the inventive concept, during processes such as etching, ashing, and cleaning in a multi-reactor chamber, a device for performing uniform processing on a substrate is provided. A device is provided especially for overcoming process non-uniformity caused by exhaust deflection.

[0118] According to an embodiment of the inventive concept, exhaust deflection can be overcome by disposing an exhaust flow control unit near the exhaust port. In other words, in a multi-reactor chamber equipped with a plurality of reactors, exhaust asymmetry caused by the biased arrangement of the exhaust structure can be overcome, and the thin film on the substrate can be processed uniformly.

[0119] Figures 10 to 12 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment can be a variant of the above-described substrate processing apparatus according to an embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0120] In Figure 10 a groove 25 in contact with the flow control unit 15 is formed in the flow control ring 5, and a roller 23 is added to the lower part of the flow control unit 15. The roller 23 can be a part of the flow control unit 15. The groove 25 can be used as a track through which the flow control unit 15 moves.

[0121] Reference Figure 10 Together with Figure 9, the flow control unit 15 can move along the groove 25 as the magnet part 21 moves. The frictional force between the flow control ring 5 and the flow control unit 15 can be minimized by the roller 23, thereby facilitating the movement of the flow control unit 15.

[0122] In addition, by providing a moving track, i.e., the groove 25, the collision between the flow control unit 15 in the exhaust space 6 and the exhaust unit 4 can be prevented. The distances a and b between the exhaust unit 4 and the flow control unit 15 can be kept constant, for example when the flow control unit 15 moves.

[0123] In some embodiments, at least one of the flow control unit 15 and the flow control ring 5 may be provided with a recess or a protrusion (e.g., the protrusion 26), as Figure 11 shown. The recess or the protrusion can provide a moving track for the flow control unit 15 in the exhaust space 60. Therefore, the collision between the flow control unit 15 and the exhaust unit 4 can be prevented, and the movement of the flow control unit 15 can be easily achieved.

[0124] Figure 12 The entire track of the groove 25 provided in the exhaust space 6 is shown. Figure 12 The groove 25 is shown as being formed as a guiding unit into which the flow control unit 15 is inserted over the entire exhaust space 6, but the present disclosure is not limited thereto. For example, the groove 25 may be formed only in a part of the exhaust space 6.

[0125] In addition, in some embodiments, as Figure 12 shown, the moving track, the guiding unit, or the groove 25 or the protrusion 26 may be formed only in the region where the exhaust port 3 exists, i.e., the exhaust space 6 of the B - B' region constituting the angle α. The flow control unit 15 may be configured to be movable only in the partially formed moving track region.

[0126] Figure 13 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to some embodiments may be a variant of the substrate processing apparatus according to the above - mentioned embodiments. Hereinafter, a repeated description of the embodiments will not be given.

[0127] Figure 13 shows a solid form of a part of the magnet part 21 and the magnet support 22 of the substrate processing apparatus. Although the magnet part 21 and the magnet support 22 extend as a three - dimensional shape in the linear direction as Figure 13 shown, the magnet part 21 and the magnet support 22 may have a curved shape corresponding to the exhaust space 6 of the reactor and the flow control unit 15. In other words, the magnet part 21 and the magnet support 22 may extend to have a certain curvature (e.g., having the same curvature as the curvature of the exhaust unit).

[0128] As described above, the magnet portion 21 may be a permanent magnet or an electromagnet. One surface of the magnet support 22 passing through the chamber may form uneven portions, and the uneven portions may be inserted into the chamber. Separation of the magnet support 22 may be prevented by the uneven structure.

[0129] The roller 23 may be installed on the surface where the chamber wall and the controller contact each other. The magnet support 22 may be easily moved by the roller 23. As Figure 13 shown, the roller 23 may be implemented in the form of a wheel that can roll in one direction. For example, the magnet support 22 is provided with a wheel axle fixing portion, and the wheel axle may pass through the central portion of the wheel.

[0130] The flow control unit 15 may move in the exhaust space 6 by the magnetic force generated by the magnet portion 21. The magnet support 22 may move along a track formed in the lower wall of the chamber corresponding to the exhaust space 6 of the reactor.

[0131] The track through which the magnet portion 21 and the magnet support 22 can move may be formed on the entire circumference of the chamber. Additionally, the magnet portion 21 and the magnet support 22 may be configured to be movable only in a partially formed track region. For example, as Figure 12 shown, the track may be formed only in the region where the exhaust outlet 3 exists, that is, in the circumferential region of the chamber corresponding to the exhaust space 6 of the B - B' region forming the angle α. In other words, the moving portions of the magnet portion 21 and the magnet support 22 may be restricted to the region around the exhaust port 3.

[0132] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing apparatus, comprising: a substrate support unit; a processing unit on the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; an exhaust port connected to at least a part of the exhaust unit; a flow control unit provided in an exhaust passage from a space inside the exhaust unit to the exhaust port; a force application unit configured to generate a force for moving the flow control unit; a receiving unit for receiving the force of the force application unit; and a rolling unit between the force application unit and the receiving unit, wherein the force for moving the flow control unit is a magnetic force; and the force application unit includes a magnetic force application unit.

2. The substrate processing apparatus according to claim 1, wherein the flow control unit is adjacent to the exhaust port.

3. The substrate processing apparatus according to claim 1, wherein the exhaust unit extends to form an exhaust space surrounding the reaction space, and the exhaust port is provided to communicate with a part of the exhaust space.

4. The substrate processing apparatus according to claim 3, wherein the flow control unit is configured to prevent the airflow in the exhaust space from concentrating at the exhaust port.

5. The substrate processing apparatus according to claim 1, further comprising: a support configured to support the processing unit and the exhaust unit; and a guiding unit on the support, wherein the flow control unit is configured to be movable on the guiding unit.

6. The substrate processing apparatus according to claim 5, wherein the support and the guiding unit are implemented as an integral structure.

7. The substrate processing apparatus according to claim 5, wherein at least one of the flow control unit and the guiding unit includes a groove or a recess for preventing separation between the flow control unit and the guiding unit.

8. The substrate processing apparatus according to claim 1, wherein the exhaust unit further includes: a boundary wall defining a side of the reaction space; an outer wall parallel to the partition wall; and a connecting wall extending to connect the boundary wall to the outer wall, wherein the connecting wall provides a contact surface between the exhaust unit and the processing unit.

9. The substrate processing apparatus according to claim 1, wherein the flow control unit includes at least one through hole, and at least a part of the through hole extends toward the exhaust port.

10. The substrate processing apparatus according to claim 9, wherein the through holes are arranged in a double layer.

11. The substrate processing apparatus according to claim 9, wherein the flow control unit includes a first surface facing the exhaust port and a second surface different from the first surface, and the through hole extends through the first surface and the second surface.

12. The substrate processing apparatus according to claim 9, wherein the cross-sectional area of a first part of the through hole is different from the cross-sectional area of a second part of the through hole.

13. The substrate processing apparatus according to claim 1, wherein the magnetic force application unit includes an electromagnet, and the substrate processing apparatus further includes a controller configured to control the electromagnet.

14. The substrate processing apparatus according to claim 13, The controller is configured to supply current to the electromagnet during a maintenance operation of the substrate processing equipment and to stop supplying current to the electromagnet during a processing operation of the substrate processing equipment.

15. A substrate processing equipment, comprising: a processing unit; an exhaust unit connected to a reaction space below the processing unit; and a flow control unit provided in the exhaust unit and including at least one through hole; and a force application unit, which is separately provided from the flow control unit and is configured to generate a force for moving the flow control unit, wherein the force for moving the flow control unit is a magnetic force; and the force application unit includes a magnetic force application unit.

16. A substrate processing equipment, comprising: an exhaust unit connected to the reaction space; an exhaust port connected to at least a part of the exhaust unit; a flow control unit provided in the exhaust unit and including at least one through hole; and a force application unit configured to generate a force for moving the flow control unit, wherein the force for moving the flow control unit is a magnetic force; and the force application unit includes a magnetic force application unit.

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