Semiconductor package for high-speed data transmission and method of manufacturing the same

Abstract

Embodiments of the present invention relate to semiconductor packages for high-speed data transmission and methods for manufacturing the same. Embodiments of the present invention relate to a semiconductor structure and methods for forming the same. A method for manufacturing the semiconductor structure includes: providing a substrate; depositing a first dielectric layer over the substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive component and a second conductive component over the second dielectric layer and the waveguide, wherein the first conductive component and the second conductive component are in contact with the waveguide. The waveguide is configured to transmit an electromagnetic signal between the first conductive component and the second conductive component.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor package for high-speed data transmission and a manufacturing method thereof. Background Art

[0002] Electronic devices using semiconductor devices are essential for many modern applications. As electronic technology advances, the size of semiconductor devices continues to decrease while having greater functionality and more integrated circuits. Due to the miniaturization scale of semiconductor devices, Chip on Wafer on Substrate (CoWoS) is widely used to integrate several chips into a single semiconductor device through through substrate vias (TSVs). During CoWoS operations, many chips are assembled on a single semiconductor device. In addition, many manufacturing operations are performed within a small semiconductor device.

[0003] However, the manufacturing operation of semiconductor devices involves many steps and operations on small and thin semiconductor devices. The manufacturing of semiconductor devices with miniaturized scale becomes more complicated. The increased complexity of manufacturing semiconductor devices may cause defects such as poor structural configuration and component delamination to cause significant yield loss and increased manufacturing cost of semiconductor devices. Therefore, there are many challenges in modifying the structure of semiconductor devices and improving the manufacturing operation. Summary of the invention

[0004] According to an embodiment of the present invention, a method for manufacturing a semiconductor structure includes: providing a substrate; depositing a first dielectric layer over the substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive component and a second conductive component over the second dielectric layer and the waveguide, the first conductive component and the second conductive component being in contact with the waveguide, wherein the waveguide is configured to transmit an electromagnetic signal between the first conductive component and the second conductive component.

[0005] According to an embodiment of the present invention, a method for manufacturing a semiconductor structure includes: depositing a dielectric layer above a substrate; forming a first conductive component and a second conductive component above the dielectric layer; joining a first end and a second end of a waveguide to the first conductive component and the second conductive component, respectively; and forming a third conductive component and a fourth conductive component that contact the first end and the second end of the waveguide, respectively.

[0006] According to an embodiment of the present invention, a semiconductor structure includes: a substrate; a redistribution layer, which is disposed above the substrate and includes: a first dielectric layer, which is above the substrate; a first conductive component and a second conductive component, which are within the first dielectric layer; a waveguide, which is above the first dielectric layer and is bonded to the first conductive component and the second conductive component; a second dielectric layer, which laterally surrounds the waveguide; a third conductive component and a fourth conductive component, which are coupled to the waveguide; and a fifth conductive component, which is within the first dielectric layer and is located between the first conductive component and the surface of the substrate; and a semiconductor die, which is above the redistribution layer and electrically connected to the first conductive component. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Aspects of the present disclosure are best understood from the following detailed description read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion.

[0008] Figure 1 is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention.

[0009] Figure 2 is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention.

[0010] Figure 3A is a schematic diagram illustrating a transmission circuit, a receiving circuit and a waveguide according to some embodiments of the present invention.

[0011] Figure 3B is a schematic diagram illustrating a transmission circuit, a receiving circuit and a waveguide according to some embodiments of the present invention.

[0012] Figure 4 is a flow chart of a method of manufacturing a semiconductor structure according to some embodiments of the present invention.

[0013] Figures 4A to 4P According to some embodiments of the present invention, Figure 4 Schematic diagram of a method for manufacturing a semiconductor structure. DETAILED DESCRIPTION

[0014] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The specific examples of the elements and arrangements will be described below to simplify this disclosure. Of course, these are only examples and do not wish to be restrictive. For example, in the following description, forming a first component above or on a second component may include an embodiment in which a first component and a second component in direct contact are formed, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, this disclosure may repeat reference element symbols and / or letters in each example. This repetition is for simplicity and clarity and does not indicate the relationship between the various embodiments and / or configurations discussed in itself.

[0015] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another element or components, as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

[0016] Although the numerical ranges and parameters stating the broad scope of the present disclosure are approximate, the numerical values ​​stated in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors that are inevitably caused by the common deviations in the corresponding test measurements. Moreover, as used herein, the terms "about", "substantially" and "substantially" generally mean within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, as considered by a person of ordinary skill in the art, the terms "about", "substantially" and "substantially" mean within the acceptable standard error of the mean value. Except in the operating / working examples, or unless otherwise explicitly stated, all numerical ranges, quantities, values ​​and percentages disclosed herein (such as numerical ranges, quantities, values ​​and percentages of material quantities, durations, temperatures, operating conditions, quantity ratios and the like) should be understood as being modified by the terms "about", "substantially" and "substantially" in all examples. Therefore, unless otherwise indicated, the numerical parameters stated in the present disclosure and the appended claims are approximate values ​​that can be varied as needed. Finally, each numerical parameter should be interpreted at least in view of the number of reported significant figures and by applying general rounding techniques. Ranges may be expressed herein as from one endpoint to the other endpoint or between the two endpoints. Unless otherwise stated, all ranges disclosed herein include the endpoints.

[0017] Electronic devices including various semiconductor chips are manufactured through several operations. During the manufacturing process, semiconductor chips with different functions and sizes are integrated into a single module. The circuits of the semiconductor chips are integrated and connected through conductive traces. The semiconductor chips communicate with each other by transmitting electrical signals from one device to another through conductive traces. However, this transmission between semiconductor chips cannot meet the high-speed communication requirements between semiconductor chips. Therefore, the performance of the electronic device cannot reach the desired level.

[0018] In the present disclosure, a semiconductor structure and a method of forming the semiconductor structure are disclosed. The semiconductor structure includes: a substrate; an interconnect structure disposed or deposited above the substrate and including a dielectric layer above the substrate; a first conductive member and a second conductive member, the first conductive member disposed within the dielectric layer, the second conductive member disposed or formed within the dielectric layer; a waveguide disposed or fabricated within the dielectric layer; a first die disposed above the interconnect structure and electrically connected to the first conductive member; and a second die disposed above the interconnect structure and electrically connected to the second conductive member, wherein the waveguide is coupled to the first conductive member and the second conductive member.

[0019] An electrical signal is transmitted from the first die to the first conductive member, and the electrical signal is converted into an electromagnetic signal. The electromagnetic signal is transmitted from the first conductive member to the second conductive member through the waveguide. When the electromagnetic signal is received by the second conductive member, the electromagnetic signal is converted into an electrical signal. Then, the electrical signal is transmitted from the second conductive member to the second die. The electromagnetic signal is invisible radiation (e.g., radio waves, microwaves, millimeter waves, or the like) to provide a high data transmission speed (e.g., substantially greater than 10 Gbits / second or greater than 100 Gbits / second) along the waveguide, and energy loss of the electromagnetic signal due to the waveguide can be minimized during transmission.

[0020] Figure 1 1 is a schematic cross-sectional view of a semiconductor structure 100 according to various embodiments of the present invention. In some embodiments, the semiconductor structure 100 includes a substrate 101, an interconnect structure 102, a waveguide 103, a first die 104, and a second die 105.

[0021] In some embodiments, the semiconductor structure 100 is a semiconductor package. In some embodiments, the semiconductor structure 100 is an integrated fan-out (InFO) package, in which the I / O terminals of the first die 104 or the second die 105 are fanned out and redistributed over the surface of the first die 104 or the second die 105 with a larger area. In some embodiments, the semiconductor structure 100 is a chip-on-wafer-on-substrate (CoWoS) packaging structure. In some embodiments, the semiconductor structure 100 is a three-dimensional integrated circuit (3D IC). In some embodiments, the semiconductor structure 100 is configured to perform ultra-high-speed signal transmission within the semiconductor structure 100, such as signal transmission at a rate substantially equal to or greater than 100 gigabits per second (Gbps). In some embodiments, the semiconductor structure 100 is configured to perform high-frequency ultra-high-speed signal transmission within the semiconductor structure 100, such as signal transmission at a frequency substantially greater than about 100 gigahertz (GHz).

[0022] In some embodiments, substrate 101 is a semiconductive substrate. In some embodiments, substrate 101 comprises a semiconductive material, such as silicon, germanium, gallium, arsenic, or a combination thereof. In some embodiments, substrate 101 is an interposer or the like. In some embodiments, substrate 101 is a silicon substrate or a silicon interposer formed of bulk silicon. In some embodiments, substrate 101 comprises a material such as ceramic, glass, polymer, or the like. In some embodiments, substrate 101 comprises an organic material. In some embodiments, substrate 101 has a quadrilateral, a rectangle, a square, a polygon, or any other suitable shape.

[0023] In some embodiments, the substrate 101 includes a first surface 101a and a second surface 101b opposite the first surface 101a. In some embodiments, the via 101c extends through at least a portion of the substrate 101 in the substrate 101. In some embodiments, the via 101c extends between the first surface 101a and the second surface 101b. In some embodiments, the via 101c is formed as a conductive via and includes a conductive material such as copper, silver, gold, aluminum, tungsten, titanium, combinations thereof, or the like. In some embodiments, the via 101c is a through silicon via (TSV) extending through the thickness of the substrate 101.

[0024] In some embodiments, the first pad 101d is disposed below the via 101c and electrically connected to the via 101c. In some embodiments, the first pad 101d is disposed above the second surface 101b of the substrate 101. In some embodiments, the first pad 101d comprises a metal or a metal alloy. In some embodiments, the first pad 101d comprises chromium, copper, gold, titanium, silver, nickel, palladium, tungsten, or the like. In some embodiments, the first pad 101d is a solderable surface and serves as a platform for receiving solder material and electrically connecting the circuit of the substrate 101 to an external component or circuit.

[0025] In some embodiments, the first conductive bump 101e is placed or manufactured under the substrate 101. In some embodiments, the first conductive bump 101e is manufactured above the second surface 101b of the substrate 101. In some embodiments, the first conductive bump 101e is manufactured under the first pad 101d and is electrically connected to the first pad 101d. In some embodiments, the first conductive bump 101e is electrically connected to the via 101c. In some embodiments, the first conductive bump 101e has a cylindrical, spherical or hemispherical shape. In some embodiments, the first conductive bump 101e is a solder joint, a solder bump, a solder ball, a ball grid array (BGA) ball, a controlled collapse chip connection (C4) bump or the like. In some embodiments, the first conductive bump 101e is a conductive column or pillar. In some embodiments, the first conductive bump 101e includes a metal such as lead, tin, copper, gold, nickel, a combination thereof, or the like.

[0026] In some embodiments, the interconnect structure 102 is disposed or deposited over the substrate 101. In some embodiments, the interconnect structure 102 is deposited over the first surface 101a of the substrate 101. In some embodiments, the interconnect structure 102 includes a dielectric layer 102a deposited over the substrate 101, a number of conductive features 102b disposed or formed within the dielectric layer 102a, and a number of conductive vias 102c disposed or formed within the dielectric layer 102a.

[0027] In some embodiments, the dielectric layer 102a includes one or more dielectric layers, such as a first layer 102a-1, a second layer 102a-2, and a third layer 102a-3 stacked one above the other. In some embodiments, the dielectric layer 102a includes silicon dioxide, fluorine-doped silicon dioxide, carbon-doped silicon dioxide, porous silicon dioxide, a dielectric material with a low dielectric constant (low-K), a dielectric material with an ultra-low dielectric constant (ULK), a dielectric material with a dielectric constant substantially less than the dielectric constant of silicon dioxide, or a dielectric material with a dielectric constant substantially less than 4.

[0028] In some embodiments, the conductive member 102b and the conductive via 102c are configured to be electrically connected to the via 101c or the first conductive bump 101e. In some embodiments, the conductive member 102b and the conductive via 102c are electrically connected to a circuit disposed above or within the substrate 101. In some embodiments, the conductive member 102b is electrically coupled to a corresponding conductive via 102c. In some embodiments, the conductive member 102b is a wire and extends laterally within the dielectric layer 102a-1, 102a-2, or 102a-3, and the conductive via 102c extends vertically within the dielectric layer 102a-2 or 102a-3 to interconnect the overlying and underlying conductive members 102b. In some embodiments, the conductive member 102b and the conductive via 102c include conductive materials such as gold, silver, copper, nickel, tungsten, aluminum, tin, alloys thereof, or the like.

[0029] In some embodiments, the conductive component 102b includes a first conductive component 102b-1 and a second conductive component 102b-2. The conductive components 102b-1 and 102b-2 may be in the shape of a disk, a line, a strip, a polygon, or the like. In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 are formed or disposed above the third layer 102a-3 of the dielectric layer 102a. In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 are formed adjacent to each other. In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 are separated by a dielectric material. In some embodiments, the first conductive component 102b-1 is horizontally aligned with the second conductive component 102b-2. In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 are electrically connected to the corresponding conductive path 102c. In some embodiments, the via 101c is electrically connected to the first conductive component 102b-1, the second conductive component 102b-2, the third conductive component 102b-3, or the fourth conductive component 102b-4 through the conductive via 102c.

[0030] In some embodiments, the first conductive component 102b-1 is configured to convert an electrical signal into an electromagnetic signal or convert an electromagnetic signal into an electrical signal. In some embodiments, the first conductive component 102b-1 is configured to transmit an electromagnetic signal to the second conductive component 102b-2 or receive an electromagnetic signal from the second conductive component 102b-2. In some embodiments, the second conductive component 102b-2 is configured to receive an electromagnetic signal from the first conductive component 102b-1 or transmit an electromagnetic signal to the first conductive component 102b-1. In some embodiments, the second conductive component 102b-2 is configured to convert an electromagnetic signal into an electrical signal or convert an electrical signal into an electromagnetic signal. In some embodiments, the electromagnetic signal is invisible wavelength radiation such as microwaves, radio waves, millimeter waves, or the like. In some embodiments, the electromagnetic signal is invisible light.

[0031] In some embodiments, the conductive component 102b includes a third conductive component 102b-3 and a fourth conductive component 102b-4. The conductive components 102b-3 and 102b-4 may be in the shape of a disk, a line, a strip, a polygon, or the like. In some embodiments, the third conductive component 102b-3 and the fourth conductive component 102b-4 are disposed or formed in the second layer 102a-2 of the dielectric layer 102a. In some embodiments, the third conductive component 102b-3 and the fourth conductive component 102b-4 are formed adjacent to each other. In some embodiments, the third conductive component 102b-3 and the fourth conductive component 102b-4 are horizontally aligned. In some embodiments, the third conductive component 102b-3 and the fourth conductive component 102b-4 are electrically connected to the corresponding conductive path 102c.

[0032] In some embodiments, the third conductive component 102b-3 is configured to convert an electrical signal into an electromagnetic signal or convert an electromagnetic signal into an electrical signal. In some embodiments, the third conductive component 102b-3 is configured to transmit an electromagnetic signal to the second conductive component 102b-2 or the fourth conductive component 102b-4 or receive an electromagnetic signal from the second conductive component 102b-2 or the fourth conductive component 102b-4. In some embodiments, the fourth conductive component 102b-4 is configured to convert an electromagnetic signal into an electrical signal or convert an electrical signal into an electromagnetic signal. In some embodiments, the fourth conductive component 102b-4 is configured to receive an electromagnetic signal from the first conductive component 102b-1 or the third conductive component 102b-3 or transmit an electromagnetic signal to the first conductive component 102b-1 or the third conductive component 102b-3.

[0033] In some other embodiments, the first conductive component 102b-1 and the third conductive component 102b-3 are disposed on the same side of the waveguide 103, for example, Figure 3BSimilarly, in some other embodiments, the second conductive component 102b - 2 and the fourth conductive component 102b - 4 are disposed on the same side of the waveguide 103 .

[0034] In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 are configured as a first transmission electrode and a first reception electrode, respectively, or as a first reception electrode and a first transmission electrode, respectively. In some embodiments, the third conductive component 102b-3 and the fourth conductive component 102b-4 are configured as a second transmission electrode and a second reception electrode, respectively, or as a second reception electrode and a second transmission electrode, respectively. In some embodiments, the third conductive component 102b-3 is disposed on a side of the waveguide 103 opposite to the first conductive component 102b-1, and the fourth conductive component 102b-4 is disposed on a side of the waveguide 103 opposite to the second conductive component 102b-2. In some embodiments, the first conductive component 102b-1 has a configuration similar to that of the third conductive component 102b-3, and the second conductive component 102b-2 has a configuration similar to that of the fourth conductive component 102b-4.

[0035] In some embodiments, the first conductive component 102b-1 and the third conductive component 102b-3 can be operated in pairs, wherein one of the pair is used as a signal terminal for transmitting or receiving electromagnetic signals and the other is grounded. In some embodiments, the second conductive component 102b-2 and the fourth conductive component 102b-4 can be operated in pairs, wherein one of the pair is used as a signal terminal for transmitting or receiving electromagnetic signals and the other is grounded.

[0036] In some embodiments, the waveguide 103 is disposed within the third layer 102a-3 of the dielectric layer 102a in the interconnect structure 102. In some embodiments, the waveguide 103 is disposed between two of the conductive components 102b. In some embodiments, the waveguide 103 is disposed between the first conductive component 102b-1 and the second conductive component 102b-2 or between the third conductive component 102b-3 and the fourth conductive component 102b-4. In some embodiments, the waveguide 103 is coupled to the first conductive component 102b-1 and the second conductive component 102b-2. In some embodiments, the waveguide 103 is coupled to the third conductive component 102b-3 and the fourth conductive component 102b-4.

[0037] In some embodiments, the waveguide 103 includes a first end 103a and a second end 103b opposite to the first end 103a. In some embodiments, the first end 103a is coupled to the first conductive component 102b-1 or the third conductive component 102b-3, and the second end 103b is coupled to the second conductive component 102b-2 or the fourth conductive component 102b-4. In some embodiments, the first end 103a is surrounded by the first conductive component 102b-1 and the third conductive component 102b-3, and the second end 103b is surrounded by the second conductive component 102b-2 and the fourth conductive component 102b-4.

[0038] In some embodiments, the waveguide 103 is dielectric and is configured to transmit an electromagnetic signal from one of the conductive components 102b to another of the conductive components 102b. In some embodiments, the electromagnetic signal is transmitted within the waveguide 103. In some embodiments, the waveguide 103 is configured to transmit the electromagnetic signal from the first conductive component 102b-1 to the second conductive component 102b-2 or from the third conductive component 102b-3 to the fourth conductive component 102b-4 through the waveguide 103.

[0039] In some embodiments, the first conductive component 102b-1 and the third conductive component 102b-3 are configured as a pair of antenna plates configured to transmit or receive electromagnetic signals, wherein one of the antenna plates is used as a signal port and the other is grounded. Similarly, the second conductive component 102b-2 and the fourth conductive component 102b-4 are configured as a pair of antenna plates configured to transmit or receive electromagnetic signals, wherein one of the antenna plates is used as a signal port and the other is grounded. In some embodiments, at least a portion of the waveguide 103 between the first conductive component 102b-1 and the third conductive component 102b-3 (e.g., the first end 103a) is formed as a resonant cavity and combines the first conductive component 102b-1 and the third conductive component 102b-3 to perform conversion between electromagnetic signals and electrical signals. In some embodiments, a standing wave of electromagnetic radiation is formed in the waveguide 103, wherein the resonant frequency of the standing wave is determined by the geometry of the waveguide 103 (e.g., the width and height of the waveguide 103). In some embodiments, at least a portion of the waveguide 103 between the second conductive component 102b-2 and the fourth conductive component 102b-4 (eg, the second end 103b) is formed as a resonant cavity and combines the second conductive component 102b-2 and the fourth conductive component 102b-4 to convert electromagnetic signals into electrical signals.

[0040] In some embodiments, the electrical signal from the first conductive component 102b-1 is converted into an electromagnetic signal, the electromagnetic signal is transmitted from the first end 103a to the second end 103b within the waveguide 103, and the electromagnetic signal is converted into an electrical signal at the second conductive component 102b-2. Thus, the electrical signal is transmitted from the first conductive component 102b-1 to the second conductive component 102b-2 through the waveguide 103. In some embodiments, the transmission rate of the electromagnetic signal is substantially greater than 10 or 100 Gigabits per second (Gbps). The electrical signal transmitted from the second conductive component 102b-2 to the first conductive component 102b-1 is performed in a similar manner.

[0041] In some embodiments, waveguide 103 has a shape of a flat plate, a prism, a cuboid, a disk, a plate, a slice, or other suitable form. In some embodiments, waveguide 103 extends laterally within dielectric layer 102a-3. In some embodiments, the height of waveguide 103 is between about 1 μm and about 20 μm. In some embodiments, the width of waveguide 103 is between about 10 μm and about 200 μm. In some embodiments, the width of waveguide 103 is about 10 times the height of waveguide 103. In some embodiments, the length of waveguide 103 is between about 0.01 cm and about 1 cm.

[0042] In some embodiments, the dielectric constant of the waveguide 103 is substantially greater than the dielectric constant of the dielectric layer 102a (e.g., the first layer 102a-1, the second layer 102a-2, or the third layer 102a-3). In some embodiments, the dielectric constant of the waveguide 103 is at least 10 times the dielectric constant of the dielectric layer 102a. Since the dielectric constant of the waveguide 103 is substantially greater than the dielectric constant of the dielectric layer 102a, the waveguide 103 causes an electromagnetic signal entering the waveguide 103 to be reflected within the waveguide 103 by total internal reflection, so that the electromagnetic signal can be transmitted between the first end 103a and the second end 103b of the waveguide 103 or between the first conductive component 102b-1 and the second conductive component 102b-2.

[0043] In some embodiments, the dielectric constant of waveguide 103 is substantially greater than the dielectric constant of silicon dioxide. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 4. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 7. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 13. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 100. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 200. In some embodiments, the dielectric constant of waveguide 103 is substantially greater than 500.

[0044] In some embodiments, the waveguide 103 includes silicon nitride or silicon carbide. In some other embodiments, the waveguide 103 includes silicon dioxide (CVD-SiO2), silicon nitride (SiNx), or silicon oxynitride (SiOxNy) deposited by any suitable deposition method, such as chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), subatmospheric pressure CVD (SACVD), atmospheric pressure CVD (APCVD), metal organic CVD (MOCVD), laser CVD (LCVD), or the like. In some embodiments, the waveguide 103 includes low temperature titanium dioxide (TiO2) deposited by LCVD, physical vapor deposition (PVD), electron beam (e.g., electron gun) evaporation, or the like. In some embodiments, the waveguide 103 includes a low temperature high-k dielectric material, such as zirconium dioxide (ZrO2), aluminum oxide (Al2O3), hafnium oxide (HfOx), hafnium silicate (HfSiOx), zirconium titanate (ZrTiOx), tantalum oxide (TaOx), or the like. In some embodiments, the waveguide 103 comprises strontium titanate (SrTiO3 having a dielectric constant (k) of about 83 to about 100) or barium titanate (BaTiO3 having a dielectric constant (k) of about 500). In some embodiments, the waveguide 103 comprises a dielectric constant higher than that of aluminum oxide (Al2O3), for example, about 9.

[0045] In some embodiments, the dielectric material of the waveguide 103 mentioned above is manufactured using a low temperature deposition process, which uses CVD, PVD or other deposition operations. In some embodiments, the low temperature deposition process is performed at a temperature of less than about 400°C. In some embodiments, the low temperature deposition process is performed at a temperature of less than about 300°C. In some embodiments, the low temperature deposition process is performed at a temperature of less than about 250°C. For example, silicon dioxide is formed using CVD at about 180°C, titanium dioxide can be formed using PVD at about 240°C, and high-k dielectric materials can be formed using CVD at about 210°C. The waveguide 103 manufactured using deposition-based operations can share tools and processes used for other parts of the semiconductor structure 100 to thereby save time and cost. In some embodiments, the operating temperature for forming the waveguide 103 is similar to the operating temperature for forming other parts of the semiconductor structure 100 (e.g., components of the interconnect structure 102).

[0046] In some embodiments, the dielectric material for the waveguide 103 mentioned above is formed using high temperature operations such as powder metallurgy. For example, titanium dioxide may be formed using powder metallurgy at a temperature greater than about 400° C., greater than about 600° C., greater than about 800° C., or greater than about 1000° C. In some embodiments, the waveguide 103 fabricated using non-deposition-based operations such as metallurgy does not share tools and processes with other portions of the semiconductor structure 100 (due to different process temperature requirements) and may be prepared or fabricated prior to being disposed in the semiconductor structure 100. The waveguide 103 fabricated using metallurgy-based operations may be fabricated, for example, to have a dielectric constant (k) greater than about 50, greater than about 100, greater than about 500, or greater than about 1000, i.e., greater than the dielectric constant of the waveguide 103 fabricated using deposition-based operations. Thus, the transmission bandwidth and data transmission speed of the waveguide 103 may be increased and the required thickness of the waveguide 103 may be further reduced.

[0047] In some embodiments, the conductive component 102b further includes one or more fifth conductive components 102b-5. The fifth conductive component 102b-5 may be disposed or manufactured between the via 101c and the third conductive component 102b-3 or between the via 101c and the fourth conductive component 102b-4. In some embodiments, the fifth conductive component 102b-5 may be disposed or manufactured between the first surface 101a of the substrate 101 and the third conductive component 102b-3 or the fourth conductive component 102b-4. In some embodiments, the fifth conductive component 102b-5 is formed on the side of the third conductive component 102b-3 or the fourth conductive component 102b-4 opposite to the waveguide 103. In some embodiments, the fifth conductive component 102b-5 is grounded or electrically connected to a ground terminal and is configured to provide electrical shielding to the waveguide 103 from external noise and interference. In some embodiments, the fifth conductive component 102b-5 is in the shape of a disk or a plate extending horizontally and overlapping the entire waveguide 103, the first conductive component 102b-1, the second conductive component 102b-2, the third conductive component 102b-3, and the fourth conductive component 102b-4. In some embodiments, the fifth conductive component 102b-5 is in a rectangular shape, wherein the fifth conductive components 102b-5 are spaced apart from each other and parallel to each other and extend in the same direction, for example, perpendicular to the direction in which the waveguide 103 extends.

[0048] In some embodiments, the first die 104 is disposed above the interconnect structure 102. In some embodiments, the first die 104 is disposed above the first conductive component 102b-1 or the third conductive component 102b-3. In some embodiments, the first die 104 is manufactured to have a predetermined functional circuit within the first die 104. In some embodiments, the first die 104 is singulated from a semiconductor wafer by a mechanical or laser knife. In some embodiments, the singulated first die 104 is electrically connected to the first conductive component 102b-1 or the third conductive component 102b-3.

[0049] In some embodiments, the second die 105 is disposed above the interconnect structure 102. In some embodiments, the second die 105 is disposed adjacent to the first die 104. In some embodiments, the second die 105 is disposed above the second conductive component 102b-2 or the fourth conductive component 102b-4. In some embodiments, the second die 105 is manufactured to have a predetermined functional circuit within the second die 105. In some embodiments, the second die 105 is singulated from a semiconductor wafer by a mechanical or laser knife. In some embodiments, the singulated second die 105 is electrically connected to the second conductive component 102b-2 or the fourth conductive component 102b-4.

[0050] In some embodiments, the first die 104 or the second die 105 includes various circuits suitable for a particular application. The circuits may include various devices such as transistors, capacitors, resistors, diodes, or the like. In some embodiments, the circuits include an oscillator configured to generate a high bandwidth electrical signal for transmission through the waveguide 103. In some embodiments, the circuits include transistors ( Figure 1 Not shown in, but in Figure 3A The circuits 301 and 305 are described in Figure 3B 311 and 315).

[0051] In some embodiments, the first die 104 or the second die 105 is a die, a chip or a package. In some embodiments, the first die 104 or the second die 105 is a logic device die, a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile phone application processing (AP) die, a single chip system (SoC) (which can integrate multiple electronic components into a single die) or a high bandwidth memory (HBM) die. In the depicted example, the first die 104 is a CPU die, and the second die 105 is an HBM die. In some embodiments, from a top view, the first die 104 or the second die 105 is a quadrilateral, rectangular or square shape.

[0052] The second die 105 can operate in pair with the first die 104. In some embodiments, the first die 104 is a transmitter die or a driver die and the second die 105 is a receiving die or a receiver die. In some other embodiments, the second die 105 is a transmitter die or a driver die and the first die 104 is a receiving die or a receiver die. In some embodiments, the transmitter die includes a transmitter circuit configured to generate an electrical signal. In some embodiments, the receiving die includes a receiving circuit configured to receive an electrical signal. In some embodiments, an electrical signal generated by the first die 104 (or the second die 105) is converted into an electromagnetic signal, and the electromagnetic signal is transmitted from the first die 104 (or the second die 105) to the second conductive component 102b-2 (or the first conductive component 102b-1) or the fourth conductive component 102b-4 (or the third conductive component 102b-3) through the waveguide 103, and the electromagnetic signal is converted into an electrical signal received by the second die 105 (or the first die 104), so that the electrical signal from the first die 104 (or the second die 105) is transmitted to the second die 105 (or the first die 104) through the waveguide 103.

[0053] In some embodiments, the first die 104 is electrically connected to the first conductive component 102 b - 1 or the third conductive component 102 b - 3 through a redistribution layer (RDL) 106 and a second conductive bump 107. In some embodiments, the RDL 106 is disposed or formed above the interconnect structure 102. In some embodiments, the RDL 106 is configured to reroute a path of a circuit from the first die 104 to the conductive component 102 b to redistribute the I / O terminals of the first die 104. In some embodiments, the RDL 106 is used as the topmost layer of the interconnect structure 102.

[0054] In some embodiments, the RDL 106 includes a second dielectric layer 106a and a second pad 106b. In some embodiments, the second dielectric layer 106a is disposed or deposited above the third layer 102a-3 of the dielectric layer 102a, and the second dielectric layer 106a may also be referred to as the fourth layer 102a-4 of the dielectric layer 102a. In some embodiments, the second pad 106b is partially exposed through the second dielectric layer 106a. In some embodiments, the second pad 106b is electrically connected to the conductive path 102c or the conductive component 102b. In some embodiments, the second pad 106b extends into the second dielectric layer 106a. In some embodiments, a portion of the second pad 106b is surrounded by the second dielectric layer 106a. In some embodiments, the second dielectric layer 106a includes a dielectric material such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or the like. In some embodiments, the second pad 106b includes a conductive material such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof.

[0055] In some embodiments, one or more second conductive bumps 107 are disposed or fabricated between the interconnect structure 102 and the first die 104. In some embodiments, the second conductive bump 107 is disposed between the RDL 106 and the first die 104. In some embodiments, the first die 104 is electrically connected to the conductive component 102b or the second pad 106b through the second conductive bump 107. In some embodiments, the second conductive bump 107 is cylindrical, spherical, or hemispherical. In some embodiments, the second conductive bump 107 is a solder joint, a solder bump, a solder ball, a ball grid array (BGA) ball, a controlled collapse chip connection (C4) bump, or the like. In some embodiments, the second conductive bump 107 is a conductive column or pillar. In some embodiments, the second conductive bump 107 includes a metal such as lead, tin, copper, gold, nickel, or the like.

[0056] In some embodiments, the second die 105 is electrically connected to the second conductive component 102b-2 or the fourth conductive component 102b-4 through a redistribution layer (RDL) 106 and a second conductive bump 107. In some embodiments, the second die 105 is electrically connected to the second pad 106b of the RDL 106 through the second conductive bump 107. In some embodiments, the second conductive bump 107 is disposed between the interconnect structure 102 and the second die 105. In some embodiments, the conductive bump 107 is disposed between the RDL 106 and the second die 105. In some embodiments, the second die 105 is disposed over the second conductive component 102b-2.

[0057] In some embodiments, the primer material 108 is disposed or dispensed over the RDL 106, the interconnect structure 102, and the substrate 101. In some embodiments, the primer material 108 surrounds the second conductive bumps 107. In some embodiments, the primer material 108 fills the space between two adjacent second conductive bumps 107. In some embodiments, the sidewall of the first die 104 or the sidewall of the second die 105 is in contact with the primer material 108. In some embodiments, the primer material 108 is an electrically insulating adhesive for protecting the second conductive bumps 107 or fixing the bonding between the first die 104 and the RDL 106 or between the second die 105 and the RDL 106. In some embodiments, the primer material 108 includes epoxy, resin, epoxy molding compound, or the like.

[0058] In some embodiments, the molding compound 109 is disposed over the RDL 106, the interconnect structure 102, and the substrate 101. In some embodiments, the molding compound 109 surrounds the first die 104 and the second die 105. In some embodiments, the molding compound 109 covers the underfill material 108. In some embodiments, a portion of the molding compound 109 is disposed between the first die 104 and the second die 105. In some embodiments, a portion of the molding compound 109 is disposed over the waveguide 103. In some embodiments, the surface of the first die 104 or the surface of the second die 105 is exposed through the molding compound 109. In some embodiments, the molding compound 109 contacts the sidewall of the first die 104 or the sidewall of the second die 105. In some embodiments, the molding compound 109 may be a single layer film or a composite stack. In some embodiments, the molding compound 109 includes various dielectric materials such as molded underfill, epoxy, resin, or the like. In some embodiments, the molding compound 109 has high thermal conductivity, low moisture absorption, and high bending strength.

[0059] Figure 2 1 is a schematic cross-sectional view of a semiconductor structure 200 according to various embodiments of the present invention. In some embodiments, the semiconductor structure 200 includes a substrate 101, an interconnect structure 102, a waveguide 103, a first die 104, and a second die 105, which have similar structures as described above or Figure 1 In some embodiments, the via 101c is further laterally surrounded by the dielectric layer 102a (e.g., the fifth layer 102a-5 of the dielectric layer 102a). In some embodiments, the fifth layer 102a-5 of the dielectric layer 102a is disposed or deposited between the via 101c and the substrate 101. In some embodiments, the configuration, material, and formation method of the fifth layer 102a-5 are similar to those of the other layers of the dielectric layer 102a, and for the sake of brevity, repeated descriptions thereof are omitted.

[0060] In some embodiments, the semiconductor structure 200 includes a second substrate 201 and a bonding pad 201a disposed or formed above the second substrate 201. In some embodiments, the substrate 101 is disposed above the second substrate 201. In some embodiments, the first conductive bump 101e is disposed or fabricated above the bonding pad 201a. In some embodiments, the bonding pad 201a is electrically coupled to the first conductive bump 101e. In some embodiments, the first die 104 and the second die 105 are electrically connected to the second substrate 201 through the first conductive bump 101e.

[0061] In some embodiments, the second substrate 201 is manufactured to have a predetermined functional circuit thereon. In some embodiments, the second substrate 201 includes conductive traces and electrical elements, such as transistors, capacitors, and diodes, disposed within the second substrate 201. In some embodiments, the second substrate 201 includes a semiconductive material such as silicon. In some embodiments, the second substrate 201 is a silicon substrate. In some embodiments, the second substrate 201 is a printed circuit board (PCB). In some embodiments, the bonding pad 201a includes a conductive material such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof.

[0062] Figure 3A 1 is a schematic diagram of a portion of a semiconductor structure 100 according to some embodiments of the present invention. In some embodiments, the semiconductor structure 100 includes a first circuit 301 and a second circuit 305. In some embodiments, the first circuit 301 is a transmission circuit disposed in the first die 104, and the second circuit 305 is a reception circuit disposed in the second die 105. Alternatively, in some embodiments, the second circuit 305 is a transmission circuit disposed in the second die 105, and the first circuit 301 is a reception circuit disposed in the first die 104. In some embodiments, the waveguide 103 is a four-port waveguide connected to the first circuit 301 and the second circuit 305.

[0063] In some embodiments, the transmission circuit 301 is a driver circuit. In some embodiments, the transmission circuit 301 is a transistor and includes a first source terminal S1, a first drain terminal D1, and a first gate terminal G1. In some embodiments, the first source terminal S1 is electrically grounded. In some embodiments, the transmission circuit 301 is configured to receive an input signal IN to the first gate terminal G1 and output an electrical signal from the first drain terminal D1 to the transmission coupling element 303a through the transmission line 302. In some embodiments, the transmission coupling element 303a includes a first transmission coupling element 303a-1 and a second transmission coupling element 303a-2. In some embodiments, the transmission coupling element 303a includes a conductive material such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof. In some embodiments, the first transmission coupling element 303a-1 and the second transmission coupling element 303a-2 are disposed opposite to each other. In some embodiments, the transmission coupling elements 303a-1 and 303a-2 correspond to Figure 1 In some embodiments, the transmission coupling elements 303a-1 and 303a-2 correspond to the first conductive component 102b-1 and the third conductive component 102b-3. Figure 1In some embodiments, the first transmission coupling element 303a-1 and the second transmission coupling element 303a-2 are connected to the third conductive component 102b-3 and the first conductive component 102b-1 in the transmission line 302. In some embodiments, one of the first transmission coupling element 303a-1 and the second transmission coupling element 303a-2 is configured to receive an electrical signal, and the other is electrically grounded. In some embodiments, the first end 103a of the waveguide 103 is surrounded by the transmission coupling element 303a. In some embodiments, the electrical signal transmitted from the transmission line 302 to the first transmission coupling element 303a-1 generates an electromagnetic signal corresponding to the electrical signal, and the electromagnetic signal is transmitted from the first end 103a of the waveguide 103 to the second end 103b.

[0064] In some embodiments, the receiving circuit 305 is a receiver circuit. In some embodiments, the receiving circuit 305 is a transistor and includes a second source terminal S2, a second drain terminal D2, and a second gate terminal G2. In some embodiments, the second source terminal S2 is electrically grounded. In some embodiments, the receiving circuit 305 is configured to receive an electrical signal from the receiving coupling element 303b at the second gate terminal G2; the receiving circuit 305 is further configured to provide an output signal OUT at the second drain terminal D2. In some embodiments, the receiving coupling element 303b includes a first receiving coupling element 303b-1 and a second receiving coupling element 303b-2. In some embodiments, the receiving coupling element 303b includes a conductive material such as gold, silver, copper, nickel, tungsten, aluminum, palladium and / or an alloy thereof. In some embodiments, the first receiving coupling element 303b-1 and the second receiving coupling element 303b-2 are disposed opposite to each other. In some embodiments, the first receiving coupling element 303b-1 and the second receiving coupling element 303b-2 correspond to the second conductive component 102b-2 and the fourth conductive component 102b-4, respectively. In some embodiments, the first receiving coupling element 303b-1 and the second receiving coupling element 303b-2 correspond to the fourth conductive component 102b-4 and the second conductive component 102b-2, respectively. In some embodiments, one of the first receiving coupling element 303b-1 and the second receiving coupling element 303b-2 is configured to output an electrical signal, while the other is electrically grounded. In some embodiments, the second end 103b of the waveguide 103 is surrounded by the receiving coupling element 303b. In some embodiments, the electromagnetic signal transmitted along the waveguide 103 is converted into an electrical signal at the receiving coupling element 303b, and the electrical signal is transmitted to the second gate terminal G2 through the transmission line 304.

[0065] Figure 3B is a schematic diagram of a portion of a semiconductor structure 100 according to some embodiments of the present invention. In some embodiments, Figure 3B The portion of the semiconductor structure 100 shown in FIG. Figure 3A The part of the semiconductor structure shown in Figure 3B104, and the second circuit 315 is disposed in the second die 105. In some embodiments, the first circuit 311 is a transmission circuit disposed in the first die 104, and the second circuit 315 is a reception circuit disposed in the second die 105. In some embodiments, the first circuit 311 is a reception circuit disposed in the first die 104, and the second circuit 315 is a transmission circuit disposed in the second die 105. In some embodiments, the waveguide 103 is a six-port waveguide that includes conductive members 321 and 325 coupled to the first circuit 311 and the second circuit 315. In some embodiments, the conductive members 321 and 325 include conductive materials such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof.

[0066] In some embodiments, the transmission circuits 311 collectively form a driver circuit. In some embodiments, each of the transmission circuits 311 is a transistor and includes a first source terminal S1, a first drain terminal D1, and a first gate terminal G1, respectively. In some embodiments, the first source terminal S1 of each of the first circuits 311 is electrically grounded. In some embodiments, the transmission coupling element 303a includes conductive components 321a, 321b, and 321c. In some embodiments, the transmission circuit 311a is configured to receive an input signal IN at its first gate terminal G1 and to output an electrical signal from its first drain terminal D1 to the conductive component 321a through the transmission line 312a. In some embodiments, the conductive component 321b is grounded through the first drain terminal D1 and the first gate terminal G1 of the transmission circuit 311b and the transmission line 312b, and the conductive component 321c is grounded through the first drain terminal D1 and the first gate terminal G1 of the transmission circuit 311c and the transmission line 312c. In some embodiments, the conductive component 321a is included in Figure 1 In some embodiments, the conductive component 321b or 321c is included in Figure 1 In some embodiments, although Figure 1 It is not explicitly illustrated in FIG. 1 , but the conductive components 321 a , 321 b , and 321 c are disposed on the same side of the waveguide 103 .

[0067] In some embodiments, the receiving circuits 315 collectively form a receiver circuit. In some embodiments, each of the receiving circuits 315 is a transistor and includes a second source terminal S2, a second drain terminal D2, and a second gate terminal G2. In some embodiments, the second source terminal S2 of each of the second circuits 315 is electrically grounded. In some embodiments, the receiving coupling element 303b includes conductive components 325a, 325b, and 325c. In some embodiments, the conductive component 325a is configured to receive an electromagnetic signal, which is converted into an electrical signal, which is provided to the second drain terminal D2 of the receiving circuit 315a through the second gate terminal G2 of the receiving circuit 315a and the transmission line 314a. In some embodiments, the conductive component 325b is grounded through the second drain terminal D2 and the second gate terminal G2 of the transmission circuit 315b and the transmission line 314b, and the conductive component 325c is grounded through the second drain terminal D2 and the second gate terminal G2 of the transmission circuit 315c and the transmission line 314c. In some embodiments, the conductive component 325a is included in Figure 1 In some embodiments, the conductive component 325b or 325c is included in Figure 1 In some embodiments, although Figure 1 It is not explicitly illustrated in FIG. 1 , but the conductive members 325 a , 325 b , and 325 c are disposed on the same side of the waveguide 103 .

[0068] In the present disclosure, a method of manufacturing a semiconductor structure (100 or 200) is also disclosed. In some embodiments, the semiconductor structure (100 or 200) is formed by a method 400. The method 400 includes a number of operations and the description and illustration are not to be construed as limiting the sequence of operations. Figure 4 4 is an embodiment of a method 400 for manufacturing a semiconductor structure (100 or 200). The method 400 includes a number of operations (401, 402, 403, 404, 405, 406, and 407). Figure 4 and 4A The method described in 4P is exemplary. Modifications to the stages mentioned below (such as stage order changes, stage divisions, and stage deletions or additions) are within the contemplation scope of the present disclosure.

[0069] In operation 401, a substrate 101 is provided or received, such as Figure 4A and 4B In some embodiments, the substrate 101 is a semiconductive substrate. In some embodiments, the substrate 101 is a silicon substrate or a silicon interposer. In some embodiments, the substrate 101 includes a first surface 101a and a second surface 101b opposite to the first surface 101a. In some embodiments, the substrate 101 has a structure similar to that described above or with reference to Figure 1Or the configuration of the substrate described in 2.

[0070] In some embodiments, a via 101c is formed that extends through at least a portion of the substrate 101. In some embodiments, the via 101c extends between the first surface 101a and the second surface 101b. In some embodiments, the via 101c is a through silicon via (TSV). In some embodiments, the first recess 110 (e.g., Figure 4A ) and forming a conductive material in the first groove 110 to form a via 101c (as shown in Figure 4B In some embodiments, removing a portion of substrate 101 includes photolithography, etching, or any other suitable operation. In some embodiments, forming the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, via 101c has a structure similar to that described or referenced above. Figure 1 In some embodiments, before the conductive material is formed into the first groove 110, a dielectric material (eg, Figure 2 In some embodiments, the dielectric material surrounds the via 101c. In some embodiments, the dielectric material is deposited between the via 101c and the substrate 101. In some embodiments, the horizontal portion of the via 101c above the substrate 101 is implemented as part of the conductive feature 102b of the interconnect structure 102, for example Figure 1 The fifth conductive component 102b-5 shown in FIG.

[0071] In operation 402, a first layer 102a-1 and a second layer 102a-2 of a dielectric layer 102a are sequentially deposited on a substrate 101. Figure 4C. In some embodiments, the first layer 102a-1 or the second layer 102a-2 of the dielectric layer 102a is a low dielectric constant layer. In some embodiments, the first layer 102a-1 of the dielectric layer 102a includes silicon dioxide, fluorine-doped silicon dioxide, carbon-doped silicon dioxide, porous silicon dioxide, a dielectric material with a low dielectric constant (low-K), a dielectric material with an ultra-low dielectric constant (ULK), a dielectric material with a dielectric constant substantially less than the dielectric constant of silicon dioxide, or a dielectric material with a dielectric constant substantially less than 4. In some embodiments, the first layer 102a-1 or the second layer 102a-2 of the dielectric layer 102a is deposited by spin coating, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density plasma CVD (HDPCVD), or any other suitable operation. In some embodiments, a planarization operation (e.g., grinding, chemical mechanical planarization (CMP), or the like) is performed after forming the first layer 102a-1 to provide a planarized surface of the first layer 102a-1 that is coplanar with the upper surface of the via 101c. A planarization operation may also be performed after forming the second layer 102a-2 to provide a planar surface of the second layer 102a-2.

[0072] In some embodiments, the conductive via 102c is formed after forming the second layer 102a-2 of the dielectric layer 102a. In some embodiments, the conductive via 102c is formed by removing a portion of the second layer 102a-2 of the dielectric layer 102a and forming a conductive material therein. In some embodiments, removing the portion of the second layer 102a-2 in the dielectric layer 102a includes photolithography, etching, or any other suitable operation. In some embodiments, forming the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, the conductive via 102c has a structure similar to that described or referenced above. Figure 1 In some embodiments, the conductive member 102b and some of the conductive paths 102c are formed separately or simultaneously.

[0073] In some embodiments, the conductive component 102b is formed after the conductive path 102c is deposited. In some embodiments, the conductive component 102b and the conductive path 102c are formed within the second layer 102a-2 of the dielectric layer 102a. In some embodiments, the conductive component 102b including the third conductive component 102b-3 and the fourth conductive component 102b-4 is formed. In some embodiments, the conductive component 102b is formed by removing a portion of the second layer 102a-2 of the dielectric layer 102a and disposing a conductive material. In some embodiments, removing the portion of the second layer 102a-2 in the dielectric layer 102a includes photolithography, etching, or any other suitable operation to expose the upper surface of the conductive path 102c. In some embodiments, forming the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, the conductive component 102b has a structure similar to that described or referenced above. Figure 1 In some embodiments, an etching operation of the conductive via 102c and the conductive components 102b-3 and 102b-4 is performed, followed by a single deposition operation of the conductive material. In some embodiments, a planarization operation (e.g., grinding, chemical mechanical planarization (CMP), or the like) is performed to remove excess material of the conductive component 102b and provide a planarized surface of the second layer 102a-2 flush with the third conductive component 102b-3 and the fourth conductive component 102b-4.

[0074] In operation 403, a waveguide 103 is attached or formed over the second layer 102a-2 of the dielectric layer 102a, such as Figures 4D to 4H . In some embodiments, the waveguide 103 is formed over the conductive component 102b or the conductive via 102c. In some embodiments, the waveguide 103 is deposited over the third conductive component 102b-3 and the fourth conductive component 102b-4. In some embodiments, the waveguide 103 is formed between the third conductive component 102b-3 and the fourth conductive component 102b-4. In some embodiments, the waveguide 103 is coupled to the third conductive component 102b-3 and the fourth conductive component 102b-4. In some embodiments, the waveguide 103 completely or partially overlaps the third conductive component 102b-3 and the fourth conductive component 102b-4.

[0075] In some embodiments, the waveguide 103 is formed by attaching a fabricated waveguide to the second layer 102a-2 of the dielectric layer 102a, such as Figure 4D. In some embodiments, the waveguide 103 is fabricated in a chamber different from the chamber used to fabricate the rest of the semiconductor structure 100, such as the second layer 102a-2 of the interconnect structure 102 and the conductive member 102b. In some embodiments, the fabrication of the waveguide 103 and the second layer 102a-2 of the dielectric layer 102a are performed simultaneously in separate chambers. The waveguide 103 may be formed using powder metallurgy. In some embodiments, the powder metallurgy scheme for fabricating the waveguide 103 may involve at least one of the following operations: preparing a matrix powder; mixing or blending the matrix powder with an additive; compacting the powder; sintering; and trimming the compacted powder. In some embodiments, the formation of the waveguide 103 is performed at a temperature T1 that is higher than a predetermined temperature, such as about 400° C., wherein the predetermined temperature is higher than a temperature at which other portions of the semiconductor structure 100 may be fabricated to have a desired function. In some embodiments, the temperature T1 is higher than about 600° C., higher than 800° C., or higher than about 1000° C. The fabricated waveguide 103 may be manufactured in the shape of a tile, prism, cuboid, disk, plate, pie slice, or other suitable configuration prior to being attached to the dielectric layer 102a.

[0076] In some embodiments, the waveguide 103 is attached to the semiconductor structure 100 using a pick-and-place (PNP) operation. The fabricated waveguide 103 is picked up and attached to a carrier 420 by an adhesive layer 422. In some embodiments, the carrier 420 is made of glass, ceramic, silicon substrate, or other suitable materials. In some embodiments, the adhesive layer 422 includes a photosensitive material that can be detached from the carrier 420 by irradiating the carrier 420 with ultraviolet (UV) light. For example, the adhesive layer 422 can be a light-to-heat conversion (LTHC) release film, epoxy resin, UV glue, or the like.

[0077] After being picked up and attached to the carrier 420, the waveguide 103 is moved over the second layer 102a-2 of the dielectric layer 102a and aligned at a position, such as a central position between the third conductive component 102b-3 and the fourth conductive component 102b-4. A bonding tool is used to move the carrier 420 together with the waveguide 103 over the second layer 102a-2 of the dielectric layer 102a and align the waveguide 103 with the second layer 102a-2 of the dielectric layer 102a. When the waveguide 103 is aligned with the second layer 102a-2, the bonding tool may cause the waveguide 103 to approach the second layer 102a-2 and bond the waveguide 103 with the upper surface of the second layer 102a-2 of the dielectric layer 102a. The waveguide 103 may contact the third conductive component 102b-3 and the fourth conductive component 102b-4. The waveguide 103 may completely or partially overlap the third conductive component 102b-3 and the fourth conductive component 102b-4. In some embodiments, alignment marks may be formed on the wafer on which the semiconductor structure 100 is manufactured and on the carrier 420 to facilitate alignment operations of bonding tools.

[0078] Figure 4E A thermal operation 430 is described on the semiconductor structure 100. The thermal operation 430 may increase the bonding strength between the waveguide 103 and the semiconductor structure 100. The thermal operation 430 may include an anneal such as a furnace anneal or a rapid thermal anneal (RTA). In some embodiments, the thermal operation 430 is performed at a temperature of about 250° C. for less than 30 minutes, such as about 10 minutes. In some embodiments, the thermal operation 430 is performed in situ. Figure 4D The thermal operation 430 and the bonding operation described in .

[0079] After bonding the waveguide 103 to the second layer 102a-2 of the dielectric layer 102a, the carrier 420 is released or detached from the waveguide 103 and the semiconductor structure 100. Figure 4F In some embodiments, the adhesion layer 422 is removed or etched during the removal of the carrier 420. Figure 4G A thermal operation 440 is described on the semiconductor structure 100. The thermal operation 440 may provide a permanent bond strength between the waveguide 103 and the semiconductor structure 100 that is greater than the bond strength provided by the thermal operation 430. The thermal operation 440 may include an anneal such as a furnace anneal or a rapid thermal anneal (RTA). In some embodiments, the thermal operation 440 is performed at a temperature of about 250° C. for a period of time greater than 30 minutes, such as about 2 hours. In some embodiments, the thermal operation 440 is performed and performed in situ. Figure 4D In some embodiments, the waveguide 103 has a bonding operation similar to that described above or Figure 1 , 2 Or a configuration of the waveguide configuration described in 3.

[0080] In some embodiments, a third layer 102a-3 of the dielectric layer 102a is deposited over the substrate 101 to laterally surround the waveguide 103, such as Figure 4H . In some embodiments, forming the third layer 102a-3 of the dielectric layer 102a includes spin coating, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density plasma CVD (HDPCVD), sub-atmospheric pressure CVD (SACVD), atmospheric pressure CVD (APCVD), organic metal CVD (MOCVD), laser CVD (LCVD), electron beam (e.g., electron gun) evaporation, or any other suitable operation. The waveguide 103 may have a dielectric constant greater than the dielectric constant of the third layer 102a-3 of the dielectric layer 102a. The third layer 102a-3 of the dielectric layer 102a may have a material that is the same as or different from the material of the first layer 102a-1 or the second layer 102a-2 of the dielectric layer 102a. Fig. 4IAn etching operation on the third layer 102a-3 of the dielectric layer 102a is illustrated. The third layer 103a of the dielectric layer 102a is thinned to expose the upper surface of the waveguide 103. The etching operation may include planarization such as chemical mechanical polishing (CMP), dry etching, wet etching, laser etching, or any other suitable operation.

[0081] In some embodiments, after forming the third layer 102a-3, a conductive via 102c is formed in the third layer 102a-3 of the dielectric layer 102a. In some embodiments, the conductive via 102c is formed by removing a portion of the third layer 102a-3 of the dielectric layer 102a and forming a conductive material therein. In some embodiments, removing the portion of the third layer 102a-3 in the dielectric layer 102a includes photolithography, etching, or any other suitable operation. In some embodiments, forming the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, a planarization operation is performed to remove excess portions of the conductive material from the upper surface of the third layer 102a-3 and provide a surface of the third layer 102a-3 that is coplanar with the upper surface of the conductive via 102c. In some embodiments, the conductive via 102c has a thickness similar to that of the reference 102a. Figure 1 Or the configuration of the conductive path described in 2.

[0082] In operation 404, a first conductive component 102b-1 or a second conductive component 102b-2 is formed on the third layer 102a-3 of the dielectric layer 102a, such as Figure 4J In some embodiments, a conductive component 102b including a first conductive component 102b-1 and a second conductive component 102b-2 is formed. In some embodiments, a waveguide 103 is disposed between the first conductive component 102b-1 and the second conductive component 102b-2. In some embodiments, the waveguide 103 is connected to the first conductive component 102b-1 and the second conductive component 102b-2. In some embodiments, the waveguide 103 completely or partially overlaps the first conductive component 102b-1 and the second conductive component 102b-2.

[0083] In some embodiments, the first conductive component 102b-1 or the second conductive component 102b-2 is formed by depositing a conductive material on the planarized third layer 102a-3 of the dielectric layer 102a. In some embodiments, disposing the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, the first conductive component 102b-1 and the second conductive component 102b-2 have similar Figure 1Thus, an interconnect structure 102 including a dielectric layer 102a, a conductive component 102b, and a conductive via 102c is formed over the substrate 101. In some embodiments, a waveguide 103 is also disposed within the interconnect structure 102. In some embodiments, the conductive component 102b or the conductive via 102c over the waveguide 103 is formed before or after the waveguide 103 is placed.

[0084] In some embodiments, after forming the waveguide 103, the RDL 106 is formed over the interconnect structure 102, such as Figure 4K . In some embodiments, an RDL 106 including a second dielectric layer 106a and a second pad 106b is formed. In some embodiments, the second pad 106b is formed over the conductive component 102b and electrically connected to the conductive component 102b. In some embodiments, the second pad 106b is formed by disposing a conductive material over the dielectric layer 102a and the conductive component 102b. In some embodiments, the second pad 106b is formed by sputtering, electroplating, or any other suitable operation.

[0085] In some embodiments, the second dielectric layer 106a is disposed over the dielectric layer 102a. In some embodiments, the second dielectric layer 106a is deposited by spin coating, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density plasma CVD (HDPCVD), or any other suitable operation. In some embodiments, a portion of the second dielectric layer 106a is removed to at least partially expose the second pad 106b. In some embodiments, a portion of the second dielectric layer 106a is removed by photolithography, etching, or any other suitable operation. In some embodiments, the second dielectric layer 106a and the second pad 106b have similar Figure 1 Or the configuration of the dielectric layer and pad described in 2.

[0086] In some embodiments, one or more second conductive bumps 107 are fabricated over the second pad 106 b, such as Figure 4K In some embodiments, the second conductive bumps 107 are bonded to the corresponding second pads 106b. In some embodiments, the second conductive bumps 107 are manufactured by ball drop, solder paste, stencil printing, or any other suitable operation. In some embodiments, the second conductive bumps 107 are reflowed after deposition.

[0087] In operation 405, a first die 104 is formed and disposed over the RDL 106, such as Figure 4LIn some embodiments, the first die 104 is bonded to the substrate 101. In some embodiments, the first die 104 is a transmission die or a driver die. In some embodiments, the first die 104 includes a transmission circuit or a transmitter. In some embodiments, the transmission circuit of the first die 104 is configured to generate an electrical signal. In some embodiments, the first die 104 is electrically connected to the first conductive component 102b-1 or the third conductive component 102b-3. In some embodiments, the electrical signal is transmitted from the first die 104 to the first conductive component 102b-1 or the third conductive component 102b-3, refer to Figure 3A or 3B. In some embodiments, the first die 104 has a similar Figure 1 Or the configuration of the first die described in 2.

[0088] In some embodiments, the first die 104 is electrically connected to the conductive component 102b or the conductive path 102c through the second conductive bump 107. In some embodiments, the second conductive bump 107 is disposed between the first die 104 and the RDL 106 to electrically connect the first die 104 to the first conductive component 102b-1 or the third conductive component 102b-3. In some embodiments, the second conductive bump 107 is bonded to the second pad 106b so that the first die 104 is electrically connected to the path 101c, the conductive component 102b, or the conductive path 102c. In some embodiments, an electrical signal is transmitted from the first die 104 to the first conductive component 102b-1 or the third conductive component 102b-3 through the second conductive bump 107.

[0089] In operation 406, a second die 105 is formed and disposed over the RDL 106, such as Figure 4L . In some embodiments, the second die 105 is disposed adjacent to the first die 104 and spaced apart from the first die 104. In some embodiments, the second die 105 is a receiving die or a receiver die. In some embodiments, the second die 105 includes a receiving circuit or a receiver. In some embodiments, the receiving circuit of the second die 105 is configured to receive an electrical signal. In some embodiments, the second die 105 is electrically connected to the second conductive component 102b-2 or the fourth conductive component 102b-4. In some embodiments, the electrical signal generated from the first die 104 is converted into an electromagnetic signal, and the electromagnetic signal is transmitted from the first die 104 to the second conductive component 102b-2 or the fourth conductive component 102b-4 through the waveguide 103. Then, the electromagnetic signal is converted into an electrical signal received by the second die 105, so that the electrical signal is transmitted from the first die 104 to the second die 105 through the waveguide 103. In some embodiments, the second die 105 has a structure similar to that of the reference Figure 1 Or the configuration of the second die described in 2.

[0090] In some embodiments, the second die 105 is electrically connected to the conductive component 102b or the conductive via 102c through the second conductive bump 107. In some embodiments, the second conductive bump 107 is disposed between the second die 105 and the RDL 106 to electrically connect the second die 105 to the second conductive component 102b-2 or the fourth conductive component 102b-4. In some embodiments, the second conductive bump 107 is bonded to the second pad 106b so that the second die 105 is electrically connected to the via 101c, the conductive component 102b, or the conductive via 102c. In some embodiments, the electrical signal transmitted through the waveguide 103, the third conductive component 102b-3, or the fourth conductive component 102b-4 is received by the second die 105 through the second conductive bump 107.

[0091] In some embodiments, after the first die 104 and the second die 105 are disposed, an underfill material 108 surrounding the second conductive bump 107 is disposed. Figure 4M In some embodiments, the primer material 108 surrounds the first die 104 and the second die 105 and fills the gaps between the adjacent second conductive bumps 107. In some embodiments, the primer material 108 is disposed by flowing, injecting, or any other suitable operation. In some embodiments, the primer material 108 has a similar Figure 1 Or the configuration of the base glue material described in 2.

[0092] In operation 407, a molding compound 109 is formed, such as Figure 4N . In some embodiments, the molding material 109 is formed over the RDL 106, the interconnect structure 102, and the substrate 101. In some embodiments, the molding material 109 surrounds the first die 104, the second die 105, the underfill material 108, and the second conductive bump 107. In some embodiments, the molding material 109 is formed by transfer molding, injection molding, overmolding, or any other suitable operation. In some embodiments, the molding material 109 is ground to expose the surface of the first die 104 or the second die 105. In some embodiments, the molding material 109 is ground by grinding, planarization, chemical mechanical polishing (CMP), or any other suitable operation. In some embodiments, the molding material 109 has a similar Figure 1 Or the configuration of the molding compound described in 2.

[0093] In some embodiments, the substrate 101 is ground from the second surface 101b to expose the via 101c, such as Fig.4O. In some embodiments, the second surface 101b is ground to become a new second surface 101b'. In some embodiments, the carrier is temporarily attached to the first die 104, the second die 105 and the molding compound 109 by an adhesive, and then the substrate 101 is ground from the second surface 101b. In some embodiments, the carrier includes silicon or glass. In some embodiments, the adhesive is a light-to-heat conversion (LTHC) release film, UV glue, epoxy resin or the like. In some embodiments, the substrate 101 is ground by back grinding, CMP or any other suitable operation.

[0094] In some embodiments, a first pad 101d is formed on the substrate 101, such as Figure 4P In some embodiments, the first pad 101d is formed over the new second surface 101b' of the substrate 101. In some embodiments, the first pad 101d is formed over the corresponding via 101c and is electrically connected to the corresponding via 101c. In some embodiments, the first pad 101d is formed by disposing a conductive material over the substrate 101. In some embodiments, forming the conductive material includes sputtering, electroplating, or any other suitable operation. In some embodiments, the first pad 101d has a similar Figure 1 Or the configuration of the pad described in 2.

[0095] In some embodiments, one or more first conductive bumps 101e are fabricated over the substrate 101. In some embodiments, the first conductive bump 101e is electrically connected to the conductive component 102b through a via 101c. In some embodiments, the first conductive bump 101e is electrically connected to the first conductive component 102b-1, the second conductive component 102b-2, the third conductive component 102b-3, or the fourth conductive component 102b-4 through the via 101c. In some embodiments, the first conductive bump 101e is disposed over the first pad 101d. In some embodiments, the first conductive bump 101e is disposed before the waveguide 103 is formed or after the waveguide 103 is formed. In some embodiments, the first conductive bump 101e is disposed before the first die 104 and the second die 105 are disposed. In some embodiments, the first conductive bump 101e is fabricated by ball drop, solder pasting, stencil printing, or any other suitable operation. In some embodiments, the first conductive bump 101e is reflowed after fabrication. In some embodiments, the first conductive bump 101e has a similar shape to the reference Figure 1 In some embodiments, a cutting operation is performed to separate the semiconductor structure 100 into individual dies. The cutting or singulation operation may be performed by a laser knife or the like. In some embodiments, the semiconductor structure 100 is formed, wherein the semiconductor structure 100 has a configuration similar to that of reference 1. Figure 1 Configurations of the described semiconductor structures.

[0096] Other components and processes may also be included. For example, test structures may be included to assist in verification testing of 3D packages or 3DIC devices. Test structures may include, for example, test pads formed in a redistribution layer or on a substrate that allow testing of the 3D package or 3DIC, use of probes and / or probe cards, and the like. Verification testing may be performed on intermediate structures and final structures. Additionally, the structures and methods disclosed herein may be used in conjunction with test methods that incorporate intermediate verification of known good die to improve yield and reduce cost.

[0097] According to an embodiment, a method of manufacturing a semiconductor structure includes: providing a substrate; depositing a first dielectric layer over the substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive member and a second conductive member over the second dielectric layer and the waveguide, wherein the first conductive member and the second conductive member are in contact with the waveguide. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.

[0098] According to an embodiment, a method of manufacturing a semiconductor structure includes: depositing a dielectric layer over a substrate; forming a first conductive component and a second conductive component over the dielectric layer; bonding a first end and a second end of a waveguide to the first conductive component and the second conductive component, respectively; and forming a third conductive component and a fourth conductive component contacting the first end and the second end of the waveguide, respectively.

[0099] According to an embodiment, a semiconductor structure includes a substrate and a redistribution layer disposed above the substrate. The redistribution layer includes: a first dielectric layer, which is above the substrate; a first conductive component and a second conductive component, which are within the first dielectric layer; a waveguide, which is above the first dielectric layer and bonded to the first conductive component and the second conductive component; a second dielectric layer, which laterally surrounds the waveguide; a third conductive component and a fourth conductive component, which are coupled to the waveguide; and a fifth conductive component, which is within the first dielectric layer and located between the first conductive component and a surface of the substrate. The semiconductor structure further includes a semiconductor die above the redistribution layer and electrically connected to the first conductive component.

[0100] The features of several embodiments have been summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments introduced herein. Those skilled in the art will also recognize that these equivalent constructions should not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and modifications to the present disclosure without departing from the spirit and scope of the present disclosure.

[0101] Explanation of symbols

[0102] 100:Semiconductor structure

[0103] 101: Substrate

[0104] 101a: first surface

[0105] 101b: Second surface

[0106] 101b': New Second Surface

[0107] 101c: Access

[0108] 101d: First pad

[0109] 101e: first conductive bump

[0110] 102: Interconnection structure

[0111] 102a: dielectric layer

[0112] 102a-1: First layer / dielectric layer

[0113] 102a-2: Second layer / dielectric layer

[0114] 102a-3: Third layer / dielectric layer

[0115] 102a-4: Fourth Floor

[0116] 102a-5: Fifth Floor

[0117] 102b: Conductive parts

[0118] 102b-1: first conductive component

[0119] 102b-2: second conductive component

[0120] 102b-3: third conductive component

[0121] 102b-4: fourth conductive component

[0122] 102b-5: fifth conductive component

[0123] 102c: Conductive path

[0124] 103: Waveguide

[0125] 103a: First End

[0126] 103b: Second end

[0127] 104: First Bare Chip

[0128] 105: Second bare chip

[0129] 106: Redistribution Layer (RDL)

[0130] 106a: second dielectric layer

[0131] 106b: Second pad

[0132] 107: second conductive bump

[0133] 108: Base glue material

[0134] 109: Molding plastic

[0135] 110: First groove

[0136] 200:Semiconductor structure

[0137] 201: Second substrate

[0138] 201a: Bonding pad

[0139] 301: First circuit / transmission circuit

[0140] 302: Transmission line

[0141] 303a: Transmission coupling element

[0142] 303a-1: first transmission coupling element

[0143] 303a-2: Second transmission coupling element

[0144] 303b: receiving coupling element

[0145] 303b-1: first receiving coupling element

[0146] 303b-2: second receiving coupling element

[0147] 304: Transmission Line

[0148] 305: Second circuit / receiving circuit

[0149] 311: First circuit / transmission circuit

[0150] 311a: First circuit / transmission circuit

[0151] 311b: first circuit / transmission circuit

[0152] 311c: First circuit / transmission circuit

[0153] 312a: Transmission Line

[0154] 312b: Transmission Line

[0155] 312c: Transmission Line

[0156] 314a: Transmission Line

[0157] 314b: Transmission Line

[0158] 314c: Transmission Line

[0159] 315: Second circuit / receiving circuit

[0160] 315a: Second circuit / receiving circuit

[0161] 315b: Second circuit / receiving circuit

[0162] 315c: Second circuit / receiving circuit

[0163] 321: Conductive parts

[0164] 321a: Conductive component

[0165] 321b: Conductive parts

[0166] 321c: Conductive parts

[0167] 325: Conductive parts

[0168] 325a: Conductive component

[0169] 325b: Conductive parts

[0170] 325c: Conductive parts

[0171] 400: Method

[0172] 401: Operation

[0173] 402: Operation

[0174] 403: Operation

[0175] 404: Operation

[0176] 405: Operation

[0177] 406: Operation

[0178] 407: Operation

[0179] 420: Carrier

[0180] 422: Adhesive layer

[0181] 430: Hot Operation

[0182] 440: Hot Operation

[0183] D1: First drain terminal

[0184] D2: Second drain terminal

[0185] G1: First gate terminal

[0186] G2: Second gate terminal

[0187] IN: Input signal

[0188] OUT: Output signal

[0189] S1: First source terminal

[0190] S2: Second source terminal

Claims

1. A method for manufacturing a semiconductor structure, comprising: providing a substrate; depositing a first dielectric layer over the substrate; attaching the waveguide to the carrier; attaching the waveguide to the first dielectric layer; performing a first thermal operation on the substrate, the first dielectric layer, the waveguide, and the carrier; detaching the carrier from the waveguide; After the detaching, performing a second thermal operation on the substrate, the first dielectric layer, and the waveguide; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive component and a second conductive component over the second dielectric layer and the waveguide, wherein the first conductive component and the second conductive component are in contact with the waveguide, Wherein the waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member. 2 . The method of claim 1 , further comprising aligning the waveguide at a position between the first conductive component and the second conductive component before attaching the waveguide to the first dielectric layer. The method of claim 1 , wherein a time for performing the first thermal operation is lower than a time for performing the second thermal operation. The method of claim 1 , wherein a temperature at which the first thermal operation is performed is equal to a temperature at which the second thermal operation is performed.

5. The method of claim 1, further comprising fabricating the waveguide in a first chamber different from a second chamber used to deposit the first dielectric layer before attaching the waveguide to the first dielectric layer.

6. The method of claim 5, wherein fabricating the waveguide comprises: The waveguide is fabricated at a first temperature greater than a second temperature at which the first dielectric layer is deposited.

7. The method of claim 1, further comprising forming a third conductive member and a fourth conductive member aligned with the first conductive member and the second conductive member, respectively, wherein the third conductive member and the fourth conductive member are in contact with the waveguide.

8. The method according to claim 7, wherein at least a portion of the waveguide between the first conductive component and the third conductive component or between the second conductive component and the fourth conductive component is formed as a resonant cavity and performs conversion between the electromagnetic signal and the electrical signal.

9. The method of claim 8, further comprising disposing a first die and a second die over the first dielectric layer, wherein at least one of the first die and the second die comprises circuitry configured to generate the electrical signal for conversion to the electromagnetic signal.

10. The method of claim 1, wherein a dielectric constant of the waveguide is substantially greater than a dielectric constant of the second dielectric layer.

11. The method of claim 1, further comprising disposing a first die and a second die over the first conductive member and the second conductive member, respectively.

12. The method of claim 1, wherein the first conductive feature and the second conductive feature extend laterally over the second dielectric layer.

13. A method for manufacturing a semiconductor structure, comprising: depositing a dielectric layer over the substrate; forming a first conductive component and a second conductive component over the dielectric layer; attaching the waveguide to the carrier; bonding the first end and the second end of the waveguide to the first conductive member and the second conductive member, respectively; performing a first thermal operation on the substrate, the dielectric layer, the first conductive component, the second conductive component, the waveguide, and the carrier; detaching the carrier from the waveguide; After the detaching, performing a second thermal operation on the substrate, the dielectric layer, and the waveguide; and A third conductive member and a fourth conductive member are formed to contact the first end and the second end of the waveguide, respectively.

14. The method according to claim 13, further comprising: forming a conductive path extending through at least a portion of the substrate; and A conductive bump is disposed over the substrate to electrically connect the first conductive component or the second conductive component to the conductive bump through the conductive via.

15. The method according to claim 13, further comprising: placing a first die and a second die over the first conductive component and the second conductive component, respectively; and Conductive bumps are formed between the first die and the dielectric layer or between the second die and the dielectric layer to electrically connect the first die to the first conductive component or the second die to the second conductive component.

16. The method of claim 13, further comprising forming fifth and sixth conductive members contacting the first and second ends of the waveguide, respectively.

17. The method of claim 16, further comprising electrically connecting the second conductive member, the fourth conductive member, the fifth conductive member, and the sixth conductive member to ground.

18. The method of claim 13, further comprising forming a seventh conductive member on a side of the first conductive member and the second conductive member opposite the waveguide and electrically grounding the seventh conductive member.

19. A method of manufacturing a semiconductor structure, comprising: providing a substrate; depositing a first dielectric layer over the substrate; forming a first conductive component and a second conductive component in the first dielectric layer; attaching the waveguide to the carrier; attaching the waveguide over the first dielectric layer and bonded to the first conductive member and the second conductive member; performing a first thermal operation on the substrate, the first dielectric layer, the first conductive component, the second conductive component, the waveguide, and the carrier; detaching the carrier from the waveguide; After the detaching, performing a second thermal operation on the substrate, the first dielectric layer, the first conductive component, the second conductive component, and the waveguide; depositing a second dielectric layer over the first dielectric layer and the waveguide, which laterally surrounds the waveguide; forming a third conductive component and a fourth conductive component respectively coupled to the waveguide; forming a fifth conductive feature within the first dielectric layer between the first conductive feature and a surface of the substrate; and A semiconductor die is disposed over the second dielectric layer and is electrically connected to the first conductive feature.

20. The method of claim 19, wherein the waveguide comprises a dielectric constant greater than a dielectric constant of the first dielectric layer.

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