Apparatus and method for processing a substrate

Abstract

The present invention provides an apparatus and method for processing a substrate. The inventive concept relates to a method for processing a substrate. In one embodiment, a method for etching a substrate having a silicon nitride layer includes: etching the silicon nitride layer by dispensing a first processing liquid having a set temperature and a set concentration onto a substrate heated to the set temperature, wherein while dispensing the first processing liquid in the silicon nitride layer etching process, a second processing liquid is additionally dispensed in an overlapping manner within a set time period.

Description

Technical Field

[0001] Embodiments of the inventive concepts described herein relate to an apparatus and method for processing a substrate. Background Art

[0002] Various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, cleaning, etc. are performed on a substrate to manufacture semiconductor elements or liquid crystal displays. Among these processes, the etching process is a process of removing an unnecessary area from a thin film formed on a substrate, and the thin film requires high selectivity and high etching rate.

[0003] Generally, in an etching or cleaning process, a chemical treatment step, a rinsing step, and a drying step are sequentially performed on a substrate. In the chemical treatment step, chemicals are dispensed onto the substrate to etch a thin film formed on the substrate or remove foreign matter on the substrate. Chemicals are dispensed in a state heated to a high temperature, and a heater provided in a support unit heats the substrate. Summary of the invention

[0004] Embodiments of the inventive concept provide a substrate processing apparatus and method for efficiently processing a substrate.

[0005] In addition, embodiments of the inventive concept provide a substrate processing apparatus and method for improving temperature uniformity.

[0006] Technical problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the present inventive concept belongs from the following description.

[0007] According to an exemplary embodiment, a method for etching a substrate having a silicon nitride layer includes: etching the silicon nitride layer by dispensing a first processing liquid having a set temperature and a set concentration onto a substrate heated to the set temperature, wherein while dispensing the first processing liquid in the silicon nitride layer etching process, a second processing liquid is additionally dispensed in an overlapping manner for a set time.

[0008] In one embodiment, the first treatment liquid may be a first phosphoric acid solution, and the second treatment liquid may be a second phosphoric acid solution. The first phosphoric acid solution may be different from the second phosphoric acid solution in at least one of a set temperature and a set concentration.

[0009] In one embodiment, the first phosphoric acid solution may be a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical, and the second phosphoric acid solution may be a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical.

[0010] In one embodiment, a third processing liquid having a set temperature and a set concentration may be additionally dispensed onto the substrate.

[0011] In one embodiment, the third processing liquid may be a silicon mixed solution.

[0012] In one embodiment, the silicon mixed solution may be at least one of a phosphoric acid solution and DIW.

[0013] In one embodiment, the concentration of silicon (Si) included in the third treatment liquid may be higher than the concentrations of silicon (Si) included in the first treatment liquid and the second treatment liquid.

[0014] In one embodiment, at least one of a dispensing position, a dispensing time, and a dispensing flow rate of at least one of the first and second process liquids may be adjusted based on temperature measurement results of a temperature sensor that measures the temperature of various regions of the substrate.

[0015] In one embodiment, the method may include: a step of loading a first substrate; a step of collecting surface temperature measurement results of the first substrate while processing the first substrate by dispensing a first phosphoric acid solution onto the first substrate; and a step of setting at least one of a dispensing position, a dispensing time, and a dispensing flow rate of a second processing liquid based on the collected surface temperature measurement results.

[0016] In one embodiment, the dispensing position of the second processing liquid may correspond to a region whose temperature is measured to be high during the processing of the first substrate.

[0017] In one embodiment, the dispensing time of the second processing liquid may range from any time point when the temperature starts to increase during the processing of the first substrate to any time point before the temperature decreases.

[0018] In one embodiment, the first substrate may be processed by additionally dispensing a third processing liquid.

[0019] In one embodiment, the first process fluid may be dispensed at a temperature of 130 degrees Celsius to 200 degrees Celsius.

[0020] In one embodiment, the second process fluid may be dispensed at a temperature of 130 degrees Celsius to 200 degrees Celsius.

[0021] In one embodiment, the silicon mixed solution may be dispensed at a temperature of 10 degrees Celsius to 175 degrees Celsius.

[0022] In one embodiment, the first treatment fluid may be dispensed at a flow rate of 0 cc / min to 1000 cc / min.

[0023] In one embodiment, the second treatment fluid may be dispensed at a flow rate of 0 cc / min to 1000 cc / min.

[0024] In one embodiment, a state in which the second treatment liquid is dispensed within a set period of time and a state in which the second treatment liquid is not dispensed within the set period of time may be repeated.

[0025] In one embodiment, the third processing fluid may be dispensed at a flow rate of 0 cc / min to 100 cc / min.

[0026] In one embodiment, at least one of the first process liquid, the second process liquid, and the third process liquid may be dispensed while moving over a set area of ​​the substrate.

[0027] In one embodiment, the second processing liquid may be fixedly dispensed onto a set area of ​​the substrate during processing of the substrate.

[0028] In one embodiment, the second processing liquid may be dispensed while moving over a set area of ​​the substrate during processing of the substrate.

[0029] According to an exemplary embodiment, an apparatus for processing a substrate includes: a supporting unit that supports the substrate and is arranged to be rotatable; a heater that heats the substrate; a first nozzle that dispenses a first processing liquid onto the substrate during substrate processing, the first processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical, and a phosphoric acid solution; and a second nozzle that dispenses a second processing liquid onto the substrate during substrate processing, the second processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical, and a phosphoric acid solution.

[0030] In one embodiment, the apparatus may further include a controller and a temperature sensor for measuring the temperature of various regions of the substrate, and the controller may control at least one of a dispensing position, a dispensing time, and a dispensing flow rate of at least one of the first nozzle and the second nozzle based on the temperature measurement result of the temperature sensor.

[0031] In one embodiment, the dispensing position of the second processing liquid may correspond to a region whose temperature is measured to be high during the processing of the first substrate.

[0032] In one embodiment, the dispensing time of the second processing liquid may range from any time point when the temperature starts to increase during the processing of the first substrate to any time point before the temperature decreases.

[0033] In one embodiment, a state in which the second treatment liquid is dispensed within a set period of time and a state in which the second treatment liquid is not dispensed within the set period of time may be repeated.

[0034] In one embodiment, the second nozzle may dispense the second treatment fluid in the form of a spray.

[0035] In one embodiment, the apparatus may further include a third nozzle that dispenses a third processing liquid onto the substrate during processing of the substrate, the third processing liquid being a silicon-based chemical.

[0036] In one embodiment, the third treatment liquid further includes one of a phosphoric acid solution and DIW in addition to the silicon-based chemical. The concentration of silicon (Si) included in the third treatment liquid may be higher than the concentration of silicon (Si) included in the first treatment liquid and the second treatment liquid.

[0037] In one embodiment, the first process liquid may be dispensed at a temperature of 130 degrees Celsius to 200 degrees Celsius, the second process liquid may be dispensed at a temperature of 130 degrees Celsius to 200 degrees Celsius, and the third process liquid may be dispensed at a temperature of 10 degrees Celsius to 175 degrees Celsius.

[0038] In one embodiment, the first process liquid may be dispensed at a flow rate of 0cc / min to 1000cc / min, the second process liquid may be dispensed at a flow rate of 0cc / min to 1000cc / min, and the third process liquid may be dispensed at a flow rate of 0cc / min to 100cc / min.

[0039] In one embodiment, at least one of the first nozzle, the second nozzle, and the third nozzle may dispense the liquid while moving over a set area of ​​the substrate.

[0040] In one embodiment, the second nozzle may be fixed to dispense the second processing fluid onto a set area of ​​the substrate during processing of the substrate.

[0041] In one embodiment, the third nozzle may dispense the third processing liquid while moving over a set area of ​​the substrate during processing of the substrate.

[0042] In one embodiment, the heater may include a heating member that heats the substrate in zones. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0044] Figure 1 is a plan view illustrating a substrate processing apparatus according to an embodiment of the inventive concept;

[0045] Figure 2 is a view showing a process chamber according to an embodiment;

[0046] Figure 3 2 is a view showing a nozzle according to an embodiment and a flow path according to an embodiment.

[0047] Figure 4 : is a view showing a nozzle according to another embodiment and a flow path according to the embodiment.

[0048] Figure 5 2 is a view showing a nozzle according to an embodiment and a flow path according to another embodiment.

[0049] Figure 6 2 is a view showing a nozzle according to an embodiment and a flow path according to another embodiment.

[0050] Figure 7 is a top view showing the operation of the nozzle according to the embodiment.

[0051] Figure 8 is a graph showing substrate temperature distribution at one point in time when a first substrate is processed according to an embodiment.

[0052] Fig. 9 is a diagram showing a change in temperature over time at various points of a first substrate when the first substrate is processed according to one embodiment; and

[0053] Fig.10 is a flowchart illustrating a substrate processing method according to an embodiment. DETAILED DESCRIPTION

[0054] Various modifications and variations may be made to the embodiments of the inventive concept, and the scope of the inventive concept should not be construed as being limited to the embodiments set forth herein. These embodiments are provided so that the inventive concept will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Therefore, in the accompanying drawings, the shapes of the components are magnified for clarity of illustration.

[0055] Figure 1 is a plan view illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0056] Reference Figure 1 The substrate processing device 1 includes a graduation module 10 and a processing module 20 .

[0057] The indexing module 10 includes a loading port 120 and a conveying frame 140. The loading port 120, the conveying frame 140, and the processing module 20 are arranged in a row. Hereinafter, the arrangement direction of the loading port 120, the conveying frame 140, and the processing module 20 is referred to as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0058] The carriers 18, each having a substrate W accommodated therein, are located on the load ports 120. The load ports 120 are arranged in a row along the second direction 14. The number of the load ports 120 may be increased or decreased according to conditions such as processing efficiency and the footprint of the process module 20. Each of the carriers 18 has a plurality of slots (not shown) formed therein, in which the substrates W are placed horizontally relative to the ground. A front opening unified pod (FOUP) may be used as the carrier 18.

[0059] The processing module 20 has a buffer unit 220, a transfer chamber 240, and a processing chamber 260. The transfer chamber 240 is arranged so that its length direction is parallel to the first direction 12. The processing chamber 260 is arranged on the opposite side of the transfer chamber 240. On the opposite side of the transfer chamber 240, the processing chambers 260 are symmetrical to each other with respect to the transfer chamber 240. The processing chambers 260 are arranged on one side of the transfer chamber 240. Some of the processing chambers 260 are arranged along the length direction of the transfer chamber 240. In addition, other processing chambers 260 are stacked on each other. That is, the processing chambers 260 may be arranged on one side of the transfer chamber 240 in a manner of A. X B Array arrangement Here, “A” represents the number of the process chambers 260 arranged in a row along the first direction 12 , and “B” represents the number of the process chambers 260 arranged in a column along the third direction 16 .

[0060] In the case where four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 may be provided in two X 2 or 3 X 2 array arrangement. The number of the process chambers 260 may vary. Alternatively, the process chambers 260 may be disposed only on one side of the transfer chamber 240. In another case, the process chambers 260 may be disposed on opposite sides of the transfer chamber 240 in a single layer.

[0061] The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space where the substrate W stays before being transferred between the transfer chamber 240 and the transfer frame 140. The buffer unit 220 has a groove (not shown) formed therein, in which the substrate W is placed. The grooves (not shown) are spaced apart from each other along the third direction 16. The buffer unit 220 is open on one side facing the transfer frame 140 and on the opposite side facing the transfer chamber 240.

[0062] The conveying frame 140 conveys the substrate W between the bracket 18 and the buffer unit 220 located on the loading port 120. An indexing rail 142 and an indexing robot 144 are provided in the conveying frame 140. The indexing rail 142 is arranged so that its length direction is parallel to the second direction 14. The indexing robot 144 is mounted on the indexing rail 142 and moves linearly in the second direction 14 along the indexing rail 142. The indexing robot 144 has a base 144a, a main body 144b and an indexing arm 144c. The base 144a is mounted to be movable along the indexing rail 142. The main body 144b is connected to the base 144a. The main body 144b can move on the base 144a along the third direction 16. In addition, the main body 144b can rotate on the base 144a. The indexing arm 144c is connected to the main body 144b and can move forward and backward relative to the main body 144b. The indexing arms 144c can be operated individually. The indexing arms 144c are stacked on each other along the third direction 16 and have a spacing gap therebetween. Some of the indexing arms 144c can be used to transfer the substrate W from the processing module 20 to the bracket 18, while another indexing arm 144c can be used to transfer the substrate W from the bracket 18 to the processing module 20. Therefore, in the process of the indexing robot 144 transferring the substrate W between the carrier 18 and the processing module 20, particles generated from the substrate W to be processed can be prevented from adhering to the processed substrate W.

[0063] The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the processing chamber 260 and between the processing chambers 260. A guide rail 242 and a main robot 244 are provided in the transfer chamber 240. The guide rail 242 is arranged so that its length direction is parallel to the first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly on the guide rail 242 along the first direction 12. The main robot 244 has a base 244a, a main body 244b and a main arm 244c. The base 244a is mounted to be movable along the guide rail 242. The main body 244b is coupled to the base 244a. The main body 244b can move on the base 244a along the third direction 16. In addition, the main body 244b can rotate on the base 244a. The main arm 244c is coupled to the main body 244b and can move forward and backward relative to the main body 244b. The main arm 244c can be operated separately. The main arms 244 c overlap each other along the third direction 16 with a spacing gap therebetween.

[0064] The processing chamber 260 performs a cleaning process on the substrate W. The processing chamber 260 may have different structures depending on the type of cleaning process performed. Alternatively, the processing chamber 260 may have the same structure. Selectively, the processing chamber 260 may be divided into a plurality of groups. The processing chambers 260 belonging to the same group may have the same structure, and the processing chambers 260 belonging to different groups may have different structures.

[0065] Figure 2 is a view showing one embodiment of a process chamber.

[0066] Reference Figure 2 The process chamber 260 includes a cup 320, a substrate supporting unit 340, an elevating unit 360, a first process liquid dispensing unit 370, a second process liquid dispensing unit 390, a third process liquid dispensing unit 380, and a controller (not shown).

[0067] As will be described below, a controller (not shown) controls components of the process chamber 260 to process the substrate W according to a set process.

[0068] The cup 320 has a processing space for processing the substrate W. The cup 320 is a cylindrical shape with an open top. The cup 320 has an inner recovery bowl 322, an intermediate recovery bowl 324, and an outer recovery bowl 326. The inner recovery bowl 322, the intermediate recovery bowl 324, and the outer recovery bowl 326 recover different processing liquids used for the process. The inner recovery bowl 322 has an annular ring shape around the substrate support unit 340. The intermediate recovery bowl 324 has an annular shape around the inner recovery bowl 322. The outer recovery bowl 326 has an annular shape around the intermediate recovery bowl 324. The inner space 322a of the inner recovery bowl 322, the space 326a between the inner recovery bowl 322 and the intermediate recovery bowl 324, and the space 326a between the intermediate recovery bowl 324 and the outer recovery bowl 326 are used as inlets, and the processing liquid is introduced into the inner recovery bowl 322, the intermediate recovery bowl 324, and the outer recovery bowl 326 through the inlet.

[0069] According to one embodiment, the inlet can be located at different heights. The first recovery line 322b, the second recovery line 324b, and the third recovery line 326b are connected to the bottom of the internal recovery bowl 322, the middle recovery bowl 324, and the external recovery bowl 326. The process liquid introduced into the internal recovery bowl 322, the middle recovery bowl 324, and the external recovery bowl 326 can be provided to the external process liquid regeneration system (not shown) through the first recovery line 322b, the second recovery line 324b, and the third recovery line 326b, and can be reused.

[0070] The substrate support unit 340 supports and rotates the substrate W during processing. The substrate support unit 340 includes a rotating chuck 342, a support pin 344, a chuck pin 346, and a support shaft 348. When viewed from above, the upper surface of the rotating chuck 342 is substantially circular. The outer surface of the rotating chuck 342 has a step. The diameter of the bottom surface of the rotating chuck 342 is smaller than the diameter of the upper surface of the rotating chuck 342. The outer surface of the rotating chuck 342 has a first inclined surface 341, a horizontal surface 343, and a second inclined surface 345. The first inclined surface 341 extends downward from the upper surface of the rotating chuck 342. The horizontal surface 343 extends inward from the lower end of the first inclined surface 341. The second inclined surface 345 extends downward from the inner end of the horizontal surface 343. The first inclined surface 341 and the second inclined surface 345 are inclined downward toward the central axis of the rotating chuck 342.

[0071] The support pins 344 are arranged on the edge portion of the upper surface of the spin chuck 342 so as to be spaced apart from each other at a predetermined interval. The support pins 344 protrude upward from the spin chuck 342. The support pins 344 are arranged to form a ring as a whole by their combination. The support pins 344 support the edge portion of the rear surface of the substrate W so that the substrate W is spaced apart from the upper surface of the spin chuck 342 by a predetermined distance.

[0072] The chuck pin 346 is arranged to be farther from the central axis of the rotating chuck 342 than the supporting pin 344. The chuck pin 346 protrudes upward from the rotating chuck 342. The chuck pin 346 supports the side of the substrate W to prevent the substrate W from deviating from the correct position to the side when the substrate supporting unit 340 rotates. The chuck pin 346 can move linearly between the standby position and the supporting position along the radial direction of the rotating chuck 342. The standby position is farther from the center of the rotating chuck 342 than the supporting position. When the substrate W is loaded onto or unloaded from the substrate supporting unit 340, the chuck pin 346 is located at the standby position. When processing is performed on the substrate W, the chuck pin 346 is located at the supporting position. At the supporting position, the chuck pin 346 is brought into contact with the side of the substrate W.

[0073] The support shaft 348 rotatably supports the rotating chuck 342. The support shaft 348 is located below the rotating chuck 342. The support shaft 348 includes a rotating shaft 347 and a fixed shaft 349. The rotating shaft 347 is provided as an inner shaft, and the fixed shaft 349 is provided as an outer shaft. The rotating shaft 347 is provided so that its length direction is parallel to the third direction 16. The rotating shaft 347 is fixedly connected to the bottom surface of the rotating chuck 342. The rotating shaft 347 is rotatable by the driving member 350. The rotating chuck 342 rotates together with the rotating shaft 347. The fixed shaft 349 has a hollow cylindrical shape around the rotating shaft 347. The diameter of the fixed shaft 349 is larger than the diameter of the rotating shaft 347. The inner surface of the fixed shaft 349 is spaced apart from the rotating shaft 347. While the rotating shaft 347 rotates, the fixed shaft 349 remains in a fixed state.

[0074] The heating member 400 is located inside the rotating chuck 342 and heats the substrate W. The heating member 400 may heat the entire area of ​​the substrate W. According to one embodiment, the heating member 400 may heat the substrate W by area. According to an embodiment, the heating member 400 may have a coil shape and may be arranged inside the rotating chuck 342 at uniform intervals. When the heating member 400 heats the rotating chuck 342, the substrate W is dried, and the heat is conducted to the rear surface of the substrate W in contact with the rotating chuck 342. According to another embodiment, the substrate W may be rotated while being heated. Alternatively, the heating member 400 may be implemented by a lamp (not shown) and may be located above the substrate W. In this case, the lamp may heat the upper surface of the substrate W to dry the substrate W.

[0075] The lifting unit 360 moves the cup 320 in a vertical direction. As the cup 320 moves vertically, the height of the cup 320 relative to the substrate supporting unit 340 changes. The lifting unit 360 has a bracket 362, a movable shaft 364, and an actuator 366.

[0076] The bracket 362 is attached to the outer wall of the cup 320, and the movable shaft 364 is coupled to the bracket 362 and is vertically moved by the actuator 366. When the substrate W is placed on or lifted upward from the substrate supporting unit 340, the cup 320 moves downward so that the substrate supporting unit 340 protrudes above the cup 320. In addition, when the process is performed, the height of the cup 320 is adjusted according to the type of the process liquid dispensed onto the substrate W, so that the process liquid is introduced into the preset recovery bowls 322, 324, and 326. Optionally, the lifting unit 360 can vertically move the substrate supporting unit 340.

[0077] The first treatment liquid dispensing unit 370 distributes the treatment liquid onto the substrate W. The first treatment liquid dispensing unit 370 can distribute the first treatment liquid heated to a set temperature onto the substrate W to improve the efficiency of processing the substrate W. The first treatment liquid dispensing unit 370 includes a first support shaft 373, a first arm 372, and a first nozzle 371. The first support shaft 373 is disposed on one side of the cup 320. The first support shaft 373 has a rod shape, and its length direction is oriented in the vertical direction. The first support shaft 373 is rotatable and can be moved up and down by a driving member 374. Alternatively, the first support shaft 373 can be linearly moved in the horizontal direction and can be moved up and down by a driving member 374. The first arm 372 supports the support arm. The first arm 372 is connected to the first support shaft 373, and the first nozzle 371 is fixedly connected to the bottom surface of the distal end of the first arm 372. The first nozzle 371 can swing by the rotation of the first support shaft 373 or the first arm 372. The first nozzle 371 may be moved between the processing position and the standby position by rotation of the first support shaft 373 or movement of the first arm 372 .

[0078] Here, the processing position is a position where the first nozzle 371 faces the substrate supporting unit 340 , and the standby position is a position where the first nozzle 371 deviates from the processing position.

[0079] The first treatment liquid may be a mixture of a phosphoric acid solution and a silicon-based chemical substance and one of the phosphoric acid solutions. The first treatment liquid may be a chemical substance, and its concentration may be adjusted by adding deionized water to the phosphoric acid solution. The first treatment liquid is dispensed at a flow rate of 0 cc / min to 1000 cc / min at a temperature of 130 degrees Celsius to 200 degrees Celsius.

[0080] The second processing liquid dispensing unit 390 distributes the processing liquid onto the substrate W. The second processing liquid dispensing unit 390 can distribute the second processing liquid heated to a set temperature onto the substrate W to improve the efficiency of processing the substrate W. The second processing liquid dispensing unit 380 includes a second arm 392 and a second nozzle 391. The second arm 392 supports the second nozzle 391. The second arm 392 is connected to the first support shaft 373, and the second nozzle 391 is fixedly connected to the bottom surface of the far end of the second arm 392. The second nozzle 391 can be swung by the rotation of the second arm 392. The second nozzle 391 can be moved between the processing position and the standby position by the rotation of the second arm 392. Alternatively, the second arm 392 can be connected to a separate support shaft (not shown), and the second nozzle 391 can be moved between the processing position and the standby position by swinging a separate support shaft (not shown).

[0081] Here, the processing position is a position where the second nozzle 391 faces the substrate supporting unit 340 , and the standby position is a position where the second nozzle 391 deviates from the processing position.

[0082] The second treatment liquid can be a mixture of phosphoric acid solution and silicon-based chemical substance and one of phosphoric acid solution. The second treatment liquid can be a chemical substance, and its concentration can be adjusted by adding deionized water to the phosphoric acid solution. The second treatment liquid is distributed at a flow rate of 0cc / min to 1000cc / min at a temperature of 130 degrees Celsius to 200 degrees Celsius. The state of distributing the second treatment liquid within a set time period and the state of not distributing the second treatment liquid within the set time period can be repeated.

[0083] The third processing liquid dispensing unit 380 dispenses the processing liquid onto the substrate W. The third processing liquid dispensing unit 380 can dispense the third processing liquid heated to a set temperature onto the substrate W to improve the efficiency of processing the substrate W. The third processing liquid dispensing unit 380 includes a third supporting shaft 383, a third arm 382, ​​and a third nozzle 381. The third supporting shaft 383 is disposed on one side of the cup 320. The third supporting shaft 383 has a rod-like shape, and its length direction is oriented in the vertical direction. The third supporting shaft 383 is rotatable and movable up and down by a driving member 384. Alternatively, the third supporting shaft 383 can be linearly moved in the horizontal direction and moved up and down by the driving member 384. The third arm 382 supports the driving shaft 384. The third arm 382 is connected to the third supporting shaft 383, and the third nozzle 381 is fixedly coupled to the bottom surface of the distal end of the third arm 382. The third nozzle 381 can swing by the rotation of the third supporting shaft 383. The third nozzle 381 can move between the processing position and the standby position by the rotation of the third supporting shaft 383.

[0084] Here, the processing position is a position where the third nozzle 381 faces the substrate supporting unit 340 , and the standby position is a position where the third nozzle 381 deviates from the processing position.

[0085] The third treatment liquid is a silicon-based chemical. In addition to the silicon-based chemical, the third treatment liquid also includes one of a phosphoric acid solution and DIW. The phosphoric acid solution included can be a chemical, and its concentration can be adjusted by adding deionized water. The third treatment liquid is dispensed at a flow rate of 0cc / min to 100cc / min at a temperature of 10°C to 175°C.

[0086] The concentration of silicon (Si) contained in the third treatment liquid is higher than the concentrations of silicon (Si) contained in the first treatment liquid and the second treatment liquid.

[0087] Figure 3 2 is a view showing a nozzle according to an embodiment and a flow line according to an embodiment. Figure 3, the first nozzle 371 is connected to the first supply line 375, and the first supply line 375 is connected to the first supply source 378. The first supply source 378 stores the first treatment liquid. The second nozzle 391 is connected to the second supply line 395, and the second supply line 395 is connected to the second supply source 398. The second supply source 398 stores the second treatment liquid. The third nozzle 381 is connected to the third supply line 385, and the third supply line 385 is connected to the third supply source 388. The third supply source 378 stores the third treatment liquid.

[0088] A first heater 377 and a first flow regulating member 376 are provided on the first supply line 375. A second heater 397 and a second flow regulating member 396 are provided on the second supply line 395. A third heater 387 and a third flow regulating member 386 are provided on the third supply line 385.

[0089] The first nozzle 371 , the second nozzle 391 , and the third nozzle 381 distribute the treatment liquid in the form of a stream.

[0090] Figure 4 is a view showing a nozzle according to another embodiment and flow lines according to the embodiment. Figure 4 , the second nozzle 1391 can distribute the second treatment liquid in a spray form.

[0091] Figure 5 is a view showing a nozzle according to an embodiment and a flow line according to another embodiment. Figure 5 , the first supply line 375 and the second supply line 395 are connected at the front end of the supply source. That is, the supply line connected to the first supply source 1378 is divided into the first supply line 375 and the second supply line 395. The first heater 377 and the first flow regulating member 376 are provided on the first supply line 375. The second heater 397 and the second flow regulating member 396 are provided on the second supply line 395. The temperature of the first treatment liquid dispensed from the first nozzle 371 may be different from the temperature of the second treatment liquid dispensed from the second nozzle 391.

[0092] Figure 6 is a view showing a nozzle according to an embodiment and a flow line according to another embodiment. Figure 6, the first supply line 375a and the second supply line 395 are connected at the front end of the supply source. That is, the supply line connected to the first supply source 1378 is divided into the first supply line 375a and the second supply line 395. The first supply line 375a is connected to the auxiliary line 375b at one point. The auxiliary line 575b is connected to the auxiliary liquid supply source 379. The auxiliary liquid supply source 379 can store auxiliary liquid for adjusting the concentration of the first treatment liquid. According to one embodiment, the auxiliary liquid can be one of DIW, phosphoric acid solution and silicon mixed solution, or a combination thereof. A first heater 377a and a first flow regulating member 376a are provided on the first supply line 375a. A fourth heater 377b and a fourth flow regulating member 376b are provided on the auxiliary line 375b. The second heater 397 and the second flow regulating member 396 are provided on the second supply line 395. The fifth heater 377c may be disposed on the integrated line 375c to which the first supply line 375a and the auxiliary line 375b are connected The temperature of the first treatment liquid dispensed from the first nozzle 371 may be different from the temperature of the second treatment liquid dispensed from the second nozzle 391 .

[0093] Figure 7 is a top view showing the operation of the nozzle according to the embodiment. Figure 7 , the first nozzle 371 may scan the substrate W along a path R1. The second nozzle 391 may scan the substrate W along a path R2. The third nozzle 381 may scan the substrate W along a path R3. According to one embodiment, the first nozzle 371 dispenses the first processing liquid onto the substrate W while moving over a set area of ​​the substrate W. The set area may be an area from the center of the substrate W to an edge of the substrate W. Alternatively, the set area may be an area from an end of a central area of ​​the substrate W to an edge of the substrate W. According to an embodiment, the third nozzle 381 dispenses the third processing liquid onto the substrate W while moving over a set area of ​​the substrate W. The set area may be an area from the center of the substrate W to an edge of the substrate W. Alternatively, the set area may be an area from an end of a central area of ​​the substrate W to an edge of the substrate W.

[0094] Figure 8 is a view showing a substrate temperature distribution at a point in time when a first substrate is processed according to an embodiment, Fig. 9 is a view showing a change in temperature over time at various points of a first substrate when the first substrate is processed according to an embodiment. Figure 8 and Fig. 9 , during substrate processing, region A of the substrate may be raised to a higher temperature than regions B and C of the substrate within a predetermined period of time.

[0095] The substrate is heated by the heater while being processed. The temperatures of the dispensed first treatment liquid, the second treatment liquid, and the third treatment liquid are lower than the temperature to which the substrate is heated. Therefore, when at least one of the first treatment liquid, the second treatment liquid, and the third treatment liquid is dispensed onto the substrate, the surface temperature of the substrate decreases, while the surface temperature of the substrate increases when the first treatment liquid, the second treatment liquid, and the third treatment liquid are not dispensed onto the substrate.

[0096] According to an embodiment of the inventive concept, the temperature sensor 500 measures the change in the surface temperature of the substrate for each time and region. According to one embodiment, in the case where a first substrate as a test substrate is treated with a first treatment liquid and a third treatment liquid, as shown in FIG. Fig. 9 As shown, the temperature change at a point in region A is large, the temperature change at a point in region B is smaller than the temperature change at a point in region A but relatively large, and the temperature at a point in region C remains constant with almost no change.

[0097] At least one of the dispensing position, dispensing time and dispensing flow rate of at least one of the first process liquid, the second process liquid and the third process liquid may be adjusted based on the substrate surface temperature measurement result of the temperature sensor 500. According to one embodiment, at least one of the dispensing position, dispensing time and dispensing flow rate of the second process liquid is set based on the result obtained by collecting the surface temperature of the substrate. Fig. 9 In the embodiment, the temperature of a point in region A rises at a time interval from t1 to t2, a time interval from t3 to t4, and a time interval from t5 to t6. The temperature of a point in region A decreases at a time interval from t2 to t3 and a time interval from t4 to t5. The controller distributes the second treatment liquid at a point in the time interval from t1 to t2, the time interval from t3 to t4, and the time interval from t5 to t6. The amount of the distributed second treatment liquid is an amount that reduces and keeps the surface temperature of the substrate constant.

[0098] According to one embodiment, during substrate processing, the second nozzle 391 may be fixed to dispense the second processing liquid onto a set area of ​​the substrate. The set area is an area whose temperature is measured to be high during processing of the first substrate. According to one embodiment, during substrate processing, the second nozzle 391 may dispense the second processing liquid while moving over the set area of ​​the substrate. The set area is an area whose temperature is measured to be high during processing of the first substrate.

[0099] Fig.10 is a flow chart showing a substrate processing method according to an embodiment. Fig.10, the controller performs control to process the first substrate while monitoring the surface temperature of the first substrate (S110). The controller receives an input of the position and occurrence time of the high temperature area when processing the first substrate (S120). When processing the second substrate, the controller performs control to distribute the second processing liquid in response to the input of the position and occurrence time of the high temperature area when processing the first substrate (S130).

[0100] Although not shown, the third nozzle 381 may dispense the third treatment liquid in an inclined direction.

[0101] Although not shown, the length of the second arm 392 may be adjusted to be longer or shorter. Therefore, the second nozzle 391 may be located over the entire area of ​​the substrate.

[0102] According to an embodiment of the inventive concept, the etching rate and selectivity of a silicon nitride film may be increased by dispensing first to third treatment liquids having different temperatures and concentrations onto a substrate at certain time intervals for a set time in an overlapping manner.

[0103] According to embodiments of the inventive concept, substrate temperature uniformity may be improved by dispensing a second processing liquid based on a substrate surface temperature variation measured with respect to a first substrate.

[0104] According to embodiments of the inventive concept, a substrate processing apparatus and method may effectively process a substrate.

[0105] In addition, according to embodiments of the inventive concept, a substrate processing apparatus and method may improve temperature uniformity when processing a substrate.

[0106] The effects of the present inventive concept are not limited to the above-mentioned effects, and any other effects not mentioned herein can be clearly understood by those skilled in the art to which the present inventive concept belongs from the present specification and the accompanying drawings.

[0107] The above description illustrates the inventive concept. In addition, the above content describes exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, changes and environments. That is, without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure and / or the technology or knowledge scope of those skilled in the art, the inventive concept can be variously modified or modified. The written embodiment describes the best state of the technical spirit for implementing the inventive concept, and various changes can be made to the specific application and purpose of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiment state. In addition, it should be interpreted that the attached claims include other embodiments.

[0108] Although the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a supporting unit configured to support the substrate and arranged to be rotatable; a heater configured to heat the substrate; a first nozzle configured to dispense a first processing liquid onto the substrate during substrate processing, the first processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical and a phosphoric acid solution; a second nozzle configured to dispense a second processing liquid onto the substrate during the substrate processing, the second processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical and a phosphoric acid solution; Controller; as well as a temperature sensor configured to measure the temperature of various regions of the substrate, wherein the controller controls at least one of a dispensing position, a dispensing time, and a dispensing flow rate of at least one of the first nozzle and the second nozzle based on the temperature measurement result of the temperature sensor, wherein the dispensing position of the second processing liquid corresponds to the area where the temperature is measured to be high during the processing of the first substrate, The second processing liquid is dispensed at a time ranging from any time point when the temperature starts to rise during the processing of the first substrate to any time point before the temperature drops, and Wherein, within the time period overlapping with the distribution of the first treatment liquid, the second treatment liquid is additionally distributed for a set time.

2. The device according to claim 1, further comprising: Controller, The controller performs control so that a state in which the second treatment liquid is dispensed within a set time period and a state in which the second treatment liquid is not dispensed within the set time period are repeated.

3. The device according to claim 1, wherein: The second nozzle distributes the second treatment liquid in the form of a spray.

4. The device according to claim 1, wherein: dispensing the first treatment fluid through the first nozzle at a temperature of 130 degrees Celsius to 200 degrees Celsius, and Wherein, the second processing liquid is distributed through the second nozzle at a temperature of 130 degrees Celsius to 200 degrees Celsius.

5. The device according to claim 1, wherein: dispensing the first treatment fluid at a flow rate of 0 cc / min to 1000 cc / min, and Wherein, the second processing liquid is dispensed at a flow rate of 0cc / min to 1000cc / min.

6. The device according to claim 1, further comprising: The third nozzle is configured to dispense a third processing liquid onto the substrate during the substrate processing, wherein the third processing liquid is a silicon-based chemical.

7. The device according to claim 6, wherein: The third processing liquid further includes one of a phosphoric acid solution and DIW in addition to the silicon-based chemical.

8. The device according to claim 7, wherein: The concentration of silicon (Si) contained in the third treatment liquid is higher than the concentrations of silicon (Si) contained in the first treatment liquid and the second treatment liquid.

9. The device according to claim 7, wherein: dispensing the first process liquid at a temperature of 130 degrees Celsius to 200 degrees Celsius, wherein the second treatment liquid is distributed at a temperature of 130 degrees Celsius to 200 degrees Celsius, and Wherein, the third processing liquid is distributed at a temperature of 10 degrees Celsius to 175 degrees Celsius.

10. The device according to claim 7, wherein: dispensing the first treatment liquid at a flow rate of 0 cc / min to 1000 cc / min, wherein the second treatment liquid is distributed at a flow rate of 0 cc / min to 1000 cc / min, and Wherein, the third processing liquid is distributed at a flow rate of 0cc / min to 100cc / min.

11. The device according to claim 7, wherein: At least one of the first nozzle, the second nozzle, and the third nozzle dispenses liquid while moving over a set area of ​​the substrate.

12. The device according to claim 7, wherein: During the substrate processing, the third nozzle dispenses the third processing liquid while moving over a set area of ​​the substrate.

13. The apparatus according to claim 7, wherein: During the substrate processing, the second nozzle is fixed to dispense the second processing liquid onto a set area of ​​the substrate.

14. The apparatus according to claim 1, wherein: The heater includes a heating member configured to heat the substrate by area.

15. An apparatus for processing a substrate, the apparatus comprising: a supporting unit configured to support the substrate and arranged to be rotatable; a heater configured to heat the substrate; a first nozzle configured to dispense a first processing liquid onto the substrate during substrate processing, the first processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical and a phosphoric acid solution; a second nozzle configured to dispense a second processing liquid onto the substrate during the substrate processing, the second processing liquid being one of a mixture of a phosphoric acid solution and a silicon-based chemical and a phosphoric acid solution; a third nozzle configured to dispense a third processing liquid onto the substrate during processing of the substrate, the third processing liquid being a silicon-based chemical; a temperature sensor configured to measure the temperature of various regions of the substrate; as well as Controller, The concentration of silicon (Si) contained in the third treatment liquid is higher than the concentration of silicon (Si) contained in the first treatment liquid and the second treatment liquid. wherein the controller controls at least one of a dispensing position, a dispensing time, and a dispensing flow rate of at least one of the first nozzle and the second nozzle based on a temperature measurement result of the temperature sensor, wherein the dispensing position of the second processing liquid corresponds to the area where the temperature is measured to be high during the processing of the first substrate, and wherein the second processing liquid is dispensed at a time ranging from any time point when the temperature starts to rise during the processing of the first substrate to any time point before the temperature drops, and Wherein, within the time period overlapping with the distribution of the first treatment liquid, the second treatment liquid is additionally distributed for a set time.

16. The device according to claim 15, wherein: dispensing the first process liquid at a temperature of 130 degrees Celsius to 200 degrees Celsius, wherein the second treatment liquid is distributed at a temperature of 130 degrees Celsius to 200 degrees Celsius, and Wherein, the third processing liquid is distributed at a temperature of 10 degrees Celsius to 175 degrees Celsius.

17. The apparatus according to claim 16, wherein: dispensing the first treatment liquid at a flow rate of 0 cc / min to 1000 cc / min, wherein the second treatment liquid is distributed at a flow rate of 0 cc / min to 1000 cc / min, and Wherein, the third processing liquid is distributed at a flow rate of 0cc / min to 100cc / min.

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