Method for processing a workpiece

Abstract

The present application provides a processing method of a processed object, which can inhibit the enlargement of the device and can discharge high heat applied in etching from the processed object. The processing method of the processed object includes the steps of: applying negative pressure from a suction path to a holding surface to attract and hold the processed object by a chuck table; reducing the air pressure in a vacuum chamber to 50 Pa or more and 5000 Pa or less, which can realize low-pressure plasma and can attract and hold the processed object by the chuck table; providing the processed object with inert gas in a plasma state while attracting and holding the processed object; applying voltage to an electrode arranged on the chuck table to electrostatically adsorb the processed object by the chuck table; and providing the processed object with processing gas in a plasma state to dry etch the processed object.

Description

Technical Field

[0001] This invention relates to a method for processing a workpiece. Background Technology

[0002] Plasma etching technology is known for etching plate-shaped workpieces, such as semiconductor device wafers with devices formed on the front side of a silicon substrate, using a gas in a plasma state. In this plasma etching technology, a vacuum chamber is used to remove unwanted gases (such as the atmosphere) from the interior, leaving the interior filled only with the gases used in various etching processes. After the chamber is brought to a pressure of 1000 Pa or less to generate plasma, the workpiece is processed using plasma (see, for example, Patent Documents 1 and 2).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2007-311462

[0004] Patent Document 2: Japanese Patent Application Publication No. 08-236601

[0005] When controlling the restoration of the vacuum chamber to atmospheric pressure or a vacuum during the loading and unloading of workpieces relative to the vacuum chamber, the time spent on loading and unloading increases accordingly. Therefore, in most cases, a pre-chamber is provided in front of the vacuum chamber door, and the interior space of this pre-chamber is below a specified pressure. By providing a pre-chamber, the workpieces are loaded and unloaded relative to the pre-chamber in parallel with the etching in the vacuum chamber, thus reducing the range of pressure adjustments within the vacuum chamber and shortening the time spent on pressure adjustments. However, a problem exists: the apparatus becomes larger due to the pre-chamber.

[0006] Furthermore, electrostatic adsorption chuck stages are typically used in vacuum chambers, but this presents the following problem: if gas is present in the vacuum chamber when the workpiece is placed on the chuck stage, gas can easily remain (enter) between the workpiece and the chuck stage, even with electrostatic adsorption. This trapped gas may prevent the workpiece from escaping the high heat applied during etching via the chuck stage. Summary of the Invention

[0007] Therefore, the object of the present invention is to provide a processing method for a workpiece that can suppress the enlargement of the device and allow the workpiece to dissipate the high heat applied during etching.

[0008] According to one aspect of the present invention, a method for processing a workpiece is provided, which uses a vacuum chamber that isolates its interior from the atmosphere and processes a plate-shaped workpiece using a gas in a plasma state. The method comprises the following steps: a loading step, in which the workpiece is loaded through a loading / unloading door of the vacuum chamber and placed on a holding surface of a chuck table within the vacuum chamber; a vacuum holding step, in which, after the loading step, a negative pressure is applied from a suction path connected to the holding surface of the chuck table to attract and hold the workpiece using the chuck table; a decompression step, in which, after the vacuum holding step, the door is closed and the atmospheric gas within the vacuum chamber is vented, reducing the pressure within the vacuum chamber to a level between 50 Pa and 5000 Pa that allows for low-pressure plasma processing and enables the workpiece to be attracted and held using the chuck table; and an electrostatic adsorption step, in which, after the loading step, the workpiece is loaded through a suction path connected to the holding surface of the chuck table. After the decompression step, while the workpiece is attracted by the chuck stage, an inert gas in a plasma state is supplied to the workpiece, and a voltage is applied to the electrodes disposed on the chuck stage to electrostatically adsorb the workpiece. In the processing step, after the electrostatic adsorption step, a processing gas in a plasma state is supplied to the workpiece held by the chuck stage, and the workpiece is dry-etched. In the electrostatic adsorption stop step, after the processing step, an inert gas in a plasma state is supplied to the workpiece, and the voltage applied to the electrodes of the chuck stage is stopped. In the door opening step, inert gas is supplied to the vacuum chamber, and the door is opened after the internal pressure of the vacuum chamber is adjusted to above atmospheric pressure. Finally, in the workpiece removal step, after the door opening step, the negative pressure acting from the suction path is stopped, causing the workpiece to detach from the holding surface and be removed from the vacuum chamber.

[0009] In one embodiment of the present invention described above, a gas in a plasma state outside the vacuum chamber may be provided to the workpiece during the electrostatic adsorption step, the processing step, or the electrostatic adsorption stopping step.

[0010] Alternatively, in one embodiment of the present invention described above, a gas that is in a plasma state inside the vacuum chamber may be provided to the workpiece during the electrostatic adsorption step, the processing step, or the electrostatic adsorption stopping step.

[0011] Alternatively, in one embodiment of the present invention described above, the workpiece may be supported by a resin strip in the opening of an annular frame to form a frame unit, and the workpiece may be held on the holding surface of the chuck table through the resin strip.

[0012] According to one aspect of the invention, it is possible to suppress the enlargement of the device and to allow the workpiece to dissipate the high heat applied during etching. Attached Figure Description

[0013] Figure 1 This is a perspective view of the workpiece being processed, which is the workpiece being processed according to the processing method of the first embodiment.

[0014] Figure 2 It is shown Figure 1 A cross-sectional view of the workpiece.

[0015] Figure 3 This is a cross-sectional view of an etching apparatus that illustrates the processing method for the workpiece according to the first embodiment.

[0016] Figure 4 This is a flowchart illustrating the processing method of the workpiece according to the first embodiment.

[0017] Figure 5 Yes Figure 4 A cross-sectional view illustrating the state of resin formation during the mask forming step.

[0018] Figure 6 It is shown Figure 5 A cross-sectional view of the workpiece after the front side of the workpiece is coated with resin during the mask forming step.

[0019] Figure 7 Yes Figure 4 A cross-sectional view illustrating the state of forming the laser processing groove during the mask forming process.

[0020] Figure 8 It is shown Figure 7 In the mask forming step, a cross-sectional view of the workpiece after the mask is formed on the front side of the workpiece.

[0021] Figure 9 Yes Figure 4 A cross-sectional view illustrating the decompression and electrostatic adsorption steps.

[0022] Figure 10 Yes Figure 4 A cross-sectional view illustrating the processing steps.

[0023] Figure 11 It shows the process Figure 4 A cross-sectional view of the workpiece after the processing steps.

[0024] Figure 12 Yes Figure 4 A cross-sectional view illustrating the electrostatic adsorption stopping process.

[0025] Figure 13 Yes Figure 4 A cross-sectional view illustrating the steps for opening the door.

[0026] Figure 14 This is a cross-sectional view of an etching apparatus that illustrates the processing method for the workpiece according to the second embodiment.

[0027] Label Explanation

[0028] 1, 1-2: Etching processing apparatus; 10: Vacuum chamber; 11: Internal space; 12: Loading / unloading outlet; 13: Door; 20: Chuck stage; 21: Holding surface; 22: Suction path; 24: Electrode; 30, 30-1, 30-2: Suction source; 40: Gas supply source; 50: Plasma unit; 60: Loading / unloading unit; 70: Plasma state gas supply unit; 80: Control unit; 100: Workpiece; 105: Resin belt; 106: Annular frame; 107: Opening; 200: Frame unit; 302: Mask; 501: Inert gas; 502: Processing gas; 600: Etching tank. Detailed Implementation

[0029] Referring to the accompanying drawings, the embodiments (implementations) for carrying out the present invention will be described in detail. The present invention is not limited to the contents described in the following embodiments. Furthermore, the constituent elements described below include contents that are readily conceived by those skilled in the art and substantially the same. Additionally, the structures described below can be appropriately combined. Furthermore, various omissions, substitutions, or modifications to the structure can be made without departing from the spirit of the present invention.

[0030] [First Implementation]

[0031] The processing method of the workpiece according to the first embodiment of the present invention will be described with reference to the accompanying drawings. Figure 1 This is a perspective view of a workpiece 100, which is the object of a processing method for a workpiece according to the first embodiment. Figure 2 It is shown Figure 1 A cross-sectional view of the workpiece 100. (e.g.) Figure 1 As shown, the workpiece 100 is, for example, a wafer such as a disc-shaped semiconductor wafer or optical device wafer with silicon, sapphire, silicon carbide (SiC), gallium arsenide, etc. as the base material 100-1. Devices 103 are formed in the area of ​​the front side 101 of the workpiece 100, which is divided by multiple predetermined dividing lines 102 formed in a lattice pattern.

[0032] Additionally, a functional layer 100-2 is laminated on the front side 101 of the base material 100-1 of the workpiece 100. The functional layer 100-2 comprises: a low-dielectric-constant insulating film (hereinafter referred to as a Low-k film), which is composed of an inorganic system including SiOF, BSG (SiOB), etc., or an organic system including polymers such as polyimide-based and parylene-based polymers; and a conductive film, which is composed of a conductive metal. The Low-k film and the conductive film are laminated to form a device 103. The conductive film constitutes the circuit of the device 103. Therefore, the device 103 is composed of mutually laminated Low-k films and conductive films laminated between the Low-k films. Furthermore, the functional layer 100-2 that divides the predetermined lines 102 is composed of a Low-k film and does not have a conductive film except for the TEG (Test Element Group) 100-3. TEG 100-3 is an evaluation element used to identify design or manufacturing problems in device 103.

[0033] A resin tape 105 is adhered to the back surface 104 of the workpiece 100, opposite to the front surface 101, and an annular frame 106 is mounted on the outer edge of the resin tape 105. Thus, the workpiece 100 is supported by the resin tape 105 within the opening 107 of the annular frame 106, forming a frame unit 200. However, in this invention, the workpiece 100 is not limited to this; it can also be a rectangular encapsulation substrate, ceramic plate, or glass plate, or other plate-like object having multiple resin-sealed devices.

[0034] Here, resin tape 105 can be a so-called resin sheet that does not have an adhesive layer on the side of the workpiece 100 that is attached to the back side 104 side, or resin tape 105 can be a so-called adhesive tape that has an adhesive layer on the side of the workpiece 100 that is attached to the back side 104 side.

[0035] Figure 3 This is a cross-sectional view of an etching apparatus 1 illustrating the processing method for the workpiece according to the first embodiment. The etching apparatus 1 is an apparatus for performing plasma etching on the workpiece 100. Figure 3 As shown, the etching apparatus 1 includes a vacuum chamber 10, a chuck stage 20, a suction source 30, a gas supply source 40, a plasmaization unit 50, a transfer-in / transfer-out unit 60, and a control unit 80. Additionally, Figure 3 The mask 302 formed on the front side 101 of the workpiece 100 is omitted (see reference). Figure 8 ). Additionally, as will be discussed later. Figure 9 , Figure 10 , Figure 12 as well as Figure 13 Mask 302 is also omitted.

[0036] Vacuum chamber 10 is a shell that isolates the interior from the atmosphere, such as... Figure 3 As shown, the vacuum chamber 10 has an internal space 11, an inlet / outlet 12, a door 13, a door actuation unit 14, a mounting platform 15, a first exhaust path 16, a second exhaust path 17, an air supply path 18, and a pressure gauge 19. The vacuum chamber 10 (shell) is grounded.

[0037] The internal space 11 is a space formed inside the vacuum chamber 10, separated from the atmosphere. The loading / unloading outlet 12 is a through hole formed on the side of the vacuum chamber 10, connecting the atmosphere and the internal space 11, serving as a path for loading the workpiece 100 into the internal space 11 and unloading the workpiece 100 from the internal space 11.

[0038] Door 13 is used during loading and unloading. It is positioned near loading / unloading outlet 12 so as to be movable between a closed position and an open position. In the closed position, door 13 covers loading / unloading outlet 12, cutting off communication between the atmosphere through loading / unloading outlet 12 and the interior space 11. In the open position, door 13 retracts from the closed position, allowing communication between the atmosphere through loading / unloading outlet 12 and the interior space 11. Door actuation unit 14 moves door 13 between the closed and open positions.

[0039] The mounting platform 15 is located in the central region of the width direction below the internal space 11. The first exhaust passage 16 and the second exhaust passage 17 are separately disposed below the internal space 11, sandwiching the mounting platform 15, and respectively connect the internal space 11 to the suction sources 30-1 and 30-2 via valves 16-1 and 17-1, which can be switched between open and closed positions. In the first embodiment, the first exhaust passage 16 discharges inert gas in the amount supplied from inert gas supply sources 42 and 43, and the second exhaust passage 17 discharges processing gas in the amount supplied from processing gas supply source 41.

[0040] The gas supply passage 18 is disposed opposite to the mounting platform 15 in the central region of the width direction above the internal space 11, communicating between the internal space 11 and the gas supply source 40. The gas supply passage 18 has a dispersion member 18-1 disposed in such a way that it covers the opening on the side of the internal space 11. In the first embodiment, the dispersion member 18-1 is, for example, formed into a cylindrical shape with a plurality of through holes, so that the plasma-state gas supplied from the gas supply source 40 side is dispersed to the holding surface 21 of the chuck stage 20 of the internal space 11.

[0041] The pressure gauge 19 is installed on the housing of the vacuum chamber 10 facing the internal space 11, and is a metering system for measuring the air pressure in the internal space 11. The etching processing apparatus 1 can appropriately adjust the opening and closing of valves 16-1, 17-1, 41-1, 42-1, and 43-1 according to the air pressure in the internal space 11 measured by the pressure gauge 19.

[0042] The chuck stage 20 is housed within the vacuum chamber 10. Specifically, the chuck stage 20 is mounted on a mounting platform 15 located within the internal space 11. Figure 3 As shown, the chuck stage 20 has a holding surface 21, an attraction path 22, an electrode 24, a DC power supply 25, a cooling fluid path 27, and a cooling fluid source 28. The main body of the chuck stage 20 is formed of an insulating material with electrical insulation properties.

[0043] The holding surface 21 is a flat surface formed above the chuck table 20, which holds the back side 104 of the workpiece 100 across the resin belt 105. The suction path 22 is formed inside the chuck table 20, and connects the holding surface 21 and the suction source 30-1 via a valve 22-1 that can be switched between an open position and a closed position.

[0044] When valve 22-1 is switched to the open state, a negative pressure is applied from suction source 30-1 to the holding surface 21 of chuck table 20. When the air pressure in the internal space 11 is 50 Pa or more, a sufficient pressure difference is generated between the negative pressure acting on the holding surface 21 and the air pressure in the internal space 11. Therefore, chuck table 20 is in a state where the workpiece 100 can be held (vacuum held) with sufficient strength by utilizing the holding surface 21 to attract and hold it using the negative pressure acting on the holding surface 21. On the other hand, when the air pressure in the internal space 11 is less than 50 Pa, the pressure difference between the negative pressure acting on the holding surface 21 and the air pressure in the internal space 11 decreases. Therefore, chuck table 20 is in a state where the workpiece 100 can only be held (vacuum held) with a weaker force by utilizing the holding surface 21 even by utilizing the negative pressure acting on the holding surface 21.

[0045] Multiple electrodes 24 are embedded inside the chuck stage 20 and are electrically connected to a DC power supply 25. The DC power supply 25 can apply different DC voltages to the multiple electrodes 24 respectively. When a potential difference is generated between the electrodes 24 by applying a DC voltage through the DC power supply 25, a predetermined electric field is generated in a manner that covers the holding surface 21 of the chuck stage 20. By generating this predetermined electric field through the electrodes 24, the workpiece 100 can be electrostatically adsorbed using the holding surface 21 of the chuck stage 20, and the plasma gas can be appropriately drawn closer to the workpiece 100 held by the holding surface 21 of the chuck stage 20.

[0046] Furthermore, when the application of DC voltage from DC power supply 25 is stopped, eliminating the potential difference generated between the mutual electrodes 24, the predetermined electric field previously generated by covering the holding surface 21 of the chuck stage 20 disappears. By eliminating this predetermined electric field through the electrodes 24, the electrostatic adsorption of the workpiece 100 using the holding surface 21 of the chuck stage 20 is released.

[0047] A cooling fluid path 27 is formed inside the chuck table 20 and communicates with a cooling fluid source 28. The cooling fluid source 28 supplies cooling fluid to the cooling fluid path 27. When the cooling fluid supplied by the cooling fluid source 28 flows inside the cooling fluid path 27, it cools the holding surface 21 of the chuck table 20. The cooling fluid path 27 cools the holding surface 21 of the chuck table 20, thereby cooling the workpiece 100 held by the holding surface 21 of the chuck table 20.

[0048] like Figure 3 As shown, in the first embodiment, the suction source 30 has a suction source 30-1 connected to the first exhaust passage 16 and the suction passage 22, and a suction source 30-2 connected to the second exhaust passage 17. Furthermore, in the first embodiment, the suction source 30 has two suction sources, 30-1 and 30-2, but in this invention, it is not limited to this arrangement; it can be integrated into one suction source or divided into three suction sources.

[0049] In the first embodiment, a vacuum pump is appropriately used as the suction source 30 to perform vacuum suction on the internal space 11. Here, vacuum refers to a so-called depressurization state, for example, the air pressure in the internal space 11 of the vacuum chamber 10 is lower than atmospheric pressure. 5 Pa~10 2 A low vacuum of approximately Pa or 10 Pa 2 Pa~10 -1 A medium vacuum of around Pa is used. As a suitable vacuum pump for the suction source 30, a pump capable of drawing a vacuum into the internal space 11 to achieve a low-pressure plasma pressure while simultaneously introducing an inert gas is used. For example, a dry pump or oil rotary pump capable of achieving a low vacuum is combined with a turbomolecular pump or oil diffusion pump capable of achieving a medium vacuum. Here, achieving low-pressure plasma means being able to ionize the processing gas or inert gas under vacuum (depressurized state).

[0050] like Figure 3As shown, the gas supply source 40 includes a processing gas supply source 41 and inert gas supply sources 42 and 43. The processing gas supply source 41 is connected to the gas supply line 18 via a valve 41-1 that can be switched between an open position and a closed position. The inert gas supply sources 42 and 43 are connected to the gas supply line 18 via valves 42-1 and 43-1 that can be switched between an open position and a closed position, respectively.

[0051] In the first embodiment, the processing gas supply source 41 provides sulfur hexafluoride (SF6) gas as the processing gas. However, in this invention, it is not limited to this; any compound or mixture of gases that can be processed by etching the workpiece 100 through plasmaation can be provided as the processing gas. Furthermore, here, "able to etch the workpiece 100" means being able to etch the workpiece 100 at a predetermined speed or higher.

[0052] In the first embodiment, inert gas sources 42 and 43 provide helium (He) and nitrogen (N2) as inert gases, respectively. However, in this invention, the supply is not limited to this; any compound or mixture of gases that is inert to the workpiece 100 even when plasma is used can be provided as an inert gas. Furthermore, inertness to the workpiece 100 here means that the workpiece 100 is etched only at a rate less than a predetermined speed, and any chemical reaction caused to the workpiece 100 is also carried out at a rate less than a predetermined reaction speed. In addition, inert gas sources 42 and 43 can provide, for example, argon (Ar) or clean dry air (CDA) as inert gases. Furthermore, in the workpiece processing method of the first embodiment described later, only inert gas source 43 is used; however, in this invention, the supply is not limited to this, and only inert gas source 42 can be used, or both inert gas sources 42 and 43 can be used.

[0053] In the first embodiment, the inert gas supplied from the inert gas supply source 43 is used to break the vacuum in the internal space 11 of the vacuum chamber 10. Therefore, the valve 43-1 has a structure in which a slow exhaust valve (not shown) that suppresses the amount of inert gas supplied in the open state and an exhaust valve (not shown) that provides a larger amount of inert gas supplied in the open state are arranged side by side.

[0054] The plasma ionization unit 50 is a mechanism that ionizes the processing gas or inert gas supplied from the gas supply source 40 through the gas supply passage 18 toward the holding surface 21 of the chuck table 20 in the internal space 11 within the gas supply passage 18. Figure 3As shown, the plasma treatment unit 50 has a pair of plasma treatment electrodes 51 and a high-frequency power supply 52. ​​In the first embodiment, the plasma treatment unit 50 is capable of supplying the workpiece 100, which has been plasma-treated in a gas supply path 18 outside the vacuum chamber 10, to the workpiece 100 that has been moved into the internal space 11 of the vacuum chamber 10.

[0055] A pair of plasma electrodes 51 are arranged opposite each other, sandwiching a gas supply path 18. A high-frequency power supply 52 can apply a high-frequency AC voltage between the pair of plasma electrodes 51. When a high-frequency AC voltage is applied to the pair of plasma electrodes 51 by the high-frequency power supply 52, the gas passing through the gas supply path 18 can be plasmaized (free radicalized or ionized, etc.).

[0056] In and out unit 60 Figure 3 The loading / unloading position above the holding surface 21 of the chuck table 20 in the internal space 11 of the vacuum chamber 10, and the position outside the vacuum chamber 10, i.e., the retracted position where the loading / unloading unit 60 is positioned, are connected. The loading / unloading outlet 12 is moved along the opening direction of the loading / unloading outlet 12 as part of the moving path. The loading / unloading unit 60 has a gripping part 61 for gripping the workpiece 100 on the side facing downwards, i.e., on the side opposite the holding surface 21 of the chuck table 20 at the loading / unloading position. Figure 3 In the example of the first embodiment shown, the gripping part 61 is provided in two locations. However, in this invention, it is not limited to this. As long as the workpiece 100 can be gripped, it can be provided in one location or in three or more locations. In the first embodiment, a robotic arm is shown as a suitable example as the loading and unloading unit 60.

[0057] The control unit 80 controls each component of the etching apparatus 1, causing the etching apparatus 1 to perform various actions related to etching the workpiece 100. In the first embodiment, the control unit 80 includes a computer system. The control unit 80 includes: an arithmetic processing unit having a microprocessor such as a CPU (central processing unit); a storage device having a memory such as ROM (read-only memory) or RAM (random access memory); and an input / output interface device. The arithmetic processing unit performs arithmetic processing according to a computer program stored in the storage device, and outputs control signals for controlling the etching apparatus 1 to each component of the etching apparatus 1 via the input / output interface device.

[0058] Figure 4This is a flowchart illustrating the processing method of the workpiece according to the first embodiment. The workpiece processing method of the first embodiment is generally performed using an etching processing apparatus 1, such as... Figure 4 As shown, the processing method for the workpiece includes a mask forming step ST11, a loading step ST12, a vacuum holding step ST13, a decompression step ST14, an electrostatic adsorption step ST15, a processing step ST16, an electrostatic adsorption stopping step ST17, a door opening step ST18, and a workpiece unloading step ST19. The workpiece processing method of the first embodiment utilizes a vacuum chamber 10 of the etching processing apparatus 1 that isolates its interior from the atmosphere, and a processing gas 502 in a plasma state (see reference 1). Figure 10 A method for processing a plate-shaped workpiece 100 housed inside. In the workpiece processing method, in the first embodiment, a mask 302 is formed on the front side 101 of the workpiece 100, and plasma etching is performed from the front side 101 side. However, in this invention, it is not limited to this, and a mask 302 may also be formed on the back side 104 of the workpiece 100, and plasma etching may be performed from the back side 104 side.

[0059] Figure 5 This is to explain for Figure 1 A cross-sectional view of the state of resin 301 formed in the mask forming step ST11 of the workpiece 100. Figure 6 It is shown Figure 5 A cross-sectional view of the workpiece 100 after the front 101 side of the workpiece 100 is covered with resin 301 in the mask forming step ST11. Figure 7 This is to explain for Figure 6 A cross-sectional view of the state in which the laser processing groove 401 is formed in the mask forming step ST11 of the workpiece 100. Figure 8 It is shown Figure 7 A cross-sectional view of the workpiece 100 after forming a mask 302 on the front 101 side of the workpiece 100 in the mask forming step ST11.

[0060] like Figure 5 , Figure 6 , Figure 7 as well as Figure 8 As shown, the mask forming step ST11 is a step of forming an etching-resistant mask 302 in a region of the workpiece 100 that is not etched by the workpiece processing method of the first embodiment.

[0061] In the mask forming step ST11, firstly as follows Figure 5As shown, the holding table 111 of the resin coating unit 110 holds the back side 104 of the workpiece 100 through the resin strip 105 via the holding surface 112, and the clamping part 113 of the resin coating unit 110 clamps the annular frame 106 mounted on the workpiece 100.

[0062] In the mask forming step ST11, the resin supply section 114 of the resin coating unit 110 then supplies liquid resin 300 to the exposed side (front face 101) of the workpiece 100 held by the holding surface 112 via spraying, spreading, or dripping. The holding table 111 is rotated about an axis perpendicular to the holding surface 112. Thus, in the mask forming step ST11, centrifugal force is applied to the liquid resin 300 supplied to the front face 101 of the workpiece 100 by means of the holding table 111 and the workpiece 100. This centrifugal force causes the liquid resin 300 to thinly spread across the entire front face 101 of the workpiece 100. Figure 6 As shown, a thin film of resin 301 is formed on the front side 101 of the workpiece 100.

[0063] Here, the liquid resin 300 may contain resin 301 and be dispersed by a volatile solvent to form a coating liquid, or it may use water-soluble resin 301 as the main component. The resin 301 may be a material with strong chemical resistance to the plasma-state processing gas 502 used in the etching process ST16 described later; for example, a material commonly used in etching resists or other masks may be suitable.

[0064] In addition, in the mask forming step ST11, two or more thin film resins 301 can be formed in overlapping layers, or the resin 301 formed on the front side 101 of the workpiece 100 can be heated and hardened using a heating device (not shown) depending on the type of resin 301.

[0065] In the mask forming step ST11, after the resin 301 has hardened, as... Figure 7 As shown, the holding table 121 of the laser processing unit 120 holds the back side 104 of the workpiece 100 covered with resin 301 through the resin strip 105 via the holding surface 122, and the clamping part 123 of the laser processing unit 120 clamps the annular frame 106 mounted on the workpiece 100 covered with resin 301.

[0066] In the mask forming step ST11, next, after alignment is performed, i.e., after aligning the workpiece 100 on the holding stage 121 with the irradiation position of the laser beam 400 of the laser beam irradiation unit 124 based on the laser processing unit 120, the laser beam irradiation unit 124 irradiates the laser beam 400 from the front side 101 along the predetermined dividing line 102 to perform laser processing, thereby removing the resin 301 on the predetermined dividing line 102, such as... Figure 8 As shown, a laser processing groove 401 is formed along the predetermined dividing line 102.

[0067] In the first embodiment, in the mask forming step ST11, the surface layer of the resin 301, functional layer 100-2, TEG 100-3, and base material 100-1 on the predetermined dividing line 102 is removed to form a laser processing groove 401. The laser processing groove 401 exposes the base material 100-1 of the workpiece 100 at the bottom of the groove. In the mask forming step ST11, this is as follows... Figure 8 As shown, resin 301 remains on device 103, and resin 301 on the pre-defined dividing line 102 is removed to form a mask 302 made of resin 301. The workpiece 100 becomes a state in which the base material 100-1 of the workpiece 100 is exposed at the bottom of the laser processing tank 401 and can be processed based on etching.

[0068] When the etching apparatus 1 is not performing the workpiece processing method, it appropriately opens and closes valves 16-1 and 17-1, and maintains the internal space 11 of the vacuum chamber 10 in a vacuum state via the first exhaust passage 16 and the second exhaust passage 17 and the suction sources 30-1 and 30-2. Therefore, the loading step ST12 of the workpiece processing method of the first embodiment begins while the internal space 11 of the vacuum chamber 10 is maintained in a vacuum state.

[0069] like Figure 3 As shown, the loading step ST12 is the step of loading the workpiece 100 into the vacuum chamber 10 through the loading and unloading door 13 and placing the workpiece 100 on the holding surface 21 of the chuck table 20 inside the vacuum chamber 10.

[0070] In the loading step ST12, specifically, the vacuum state of the internal space 11 of the vacuum chamber 10, which was maintained at the beginning of the processing method for the workpiece, is first broken. That is, in the loading step ST12, the control unit 80 switches valves 16-1 and 17-1 to the closed state and switches valve 43-1 to the open state, thereby supplying inert gas from the inert gas supply source 43 to the internal space 11 of the vacuum chamber 10, so that the gas pressure in the internal space 11 is increased to atmospheric pressure.

[0071] In the loading step ST12, more specifically, the control unit 80 simply switches the slow exhaust valve of valve 43-1 to the open state. After the air pressure in the internal space 11 is slowly increased from a vacuum state to about 1000 Pa, the control unit 80 arbitrarily sets a time delay, switches the slow exhaust valve of valve 43-1 to the closed state, and switches the exhaust valve to the open state, thereby rapidly increasing the air pressure in the internal space 11 from about 1000 Pa to atmospheric pressure (about 100,000 Pa).

[0072] In the loading step ST12, when the air pressure in the internal space 11 is increased to atmospheric pressure, the control unit 80 temporarily switches the exhaust valve of valve 43-1 to the closed state. Then, in the loading step ST12, the control unit 80 appropriately switches the exhaust valve of valve 43-1 to the open state in order to maintain a slightly positive pressure relative to atmospheric pressure.

[0073] In the loading step ST12, after the air pressure in the internal space 11 is increased to atmospheric pressure, the door 13 is moved from the closed position to the open position by the door action unit 14, opening the loading / unloading outlet 12 and thus opening the vacuum chamber 10. Simultaneously with opening the loading / unloading outlet 12 in the loading step ST12, the control unit 80 opens the exhaust valve of valve 43-1, supplying inert gas from the inert gas supply source 43 to the internal space 11 of the vacuum chamber 10, thereby preventing atmospheric flow from the loading / unloading outlet 12 into the internal space 11 of the vacuum chamber 10 during subsequent processing in the loading step ST12.

[0074] In the loading step ST12, the loading and unloading unit 60, which holds the workpiece 100 formed by the mask 302 in the mask forming step ST11, moves from the retracted position to the loading and unloading position through the opened loading and unloading outlet 12 while holding the workpiece 100 after the mask forming step ST11 with the holding part 61. This allows the workpiece 100 to be loaded through the loading and unloading door 13 of the vacuum chamber 10.

[0075] In the loading step ST12, after the workpiece 100 is loaded, the loading / unloading unit 60 releases the gripping part 61 from the workpiece 100 after the mask forming step ST11 at the loading / unloading position, thereby placing the workpiece 100 on the holding surface 21 of the chuck stage 20 within the vacuum chamber 10. In the loading step ST12, this is as follows... Figure 3 As shown, the resin strip 105 of the frame unit 200, which includes the workpiece 100 to which the mask 302 is formed in the mask forming step ST11, is placed with its side facing the holding surface 21 of the chuck table 20.

[0076] like Figure 3 As shown, the vacuum holding step ST13 is a step in which the workpiece 100 is held by the chuck table 20 by applying negative pressure from the suction path 22 connected to the holding surface 21 of the chuck table 20 after the loading step ST12.

[0077] In the vacuum holding step ST13, specifically, the control unit 80 switches the valve 22-1 from a closed state to an open state, thereby applying the negative pressure from the suction source 30-1 to the holding surface 21 via the suction path 22. In the vacuum holding step ST13, this is as follows: Figure 3 As shown, the resin strip 105 side of the frame unit 200, which is composed of the workpiece 100 to which the mask 302 is formed in the mask forming step ST11, is attracted and held by the holding surface 21 of the chuck stage 20.

[0078] Figure 9 Yes Figure 4 A cross-sectional view illustrating the decompression step ST14 and the electrostatic adsorption step ST15. (See attached image.) Figure 9 As shown, the decompression step ST14 is a step in which, after performing the vacuum holding step ST13, the door 13 is closed and the atmospheric gas in the vacuum chamber 10 is vented, thereby reducing the gas pressure in the vacuum chamber 10 to a pressure of 50 Pa or more and 5000 Pa or less, which is sufficient to achieve low-pressure plasma (i.e., to perform low-pressure plasma-based processing) and to allow the chuck stage 20 to be attracted and held.

[0079] In the decompression step ST14, the loading / unloading unit 60, which was inserted into the vacuum chamber 10 through the loading / unloading outlet 12 in the loading step ST12, is first moved from the loading / unloading position to the retracted position through the loading / unloading outlet 12. In the decompression step ST14, the door 13 is then moved from the open position to the closed position by the door action unit 14, thereby closing the loading / unloading outlet 12 and closing the vacuum chamber 10.

[0080] In the decompression step ST14, after closing the inlet / outlet 12, the control unit 80 switches the exhaust valve of valve 43-1 to the closed state and switches at least one of valves 16-1 and 17-1 to the open state, thereby exhausting the atmosphere gas in the internal space 11 of the closed vacuum chamber 10 and performing vacuum suction. More specifically, in the decompression step ST14, the internal space 11 of the vacuum chamber 10 is first decompressed by the suction source 30, so that the gas pressure in the internal space 11 of the vacuum chamber 10 is 50 Pa or more and 5000 Pa or less, preferably 50 Pa or more and 1000 Pa or less, which is sufficient to achieve low-pressure plasma and to allow the workpiece 100 to be attracted and held by the holding surface 21 of the chuck stage 20.

[0081] like Figure 9 As shown, the electrostatic adsorption step ST15 is a step in which the workpiece 100 is electrostatically adsorbed by the chuck stage 20 while the workpiece 100 is attracted by the chuck stage 20, an inert gas 501 in plasma state is supplied to the workpiece 100, and a voltage is applied to the electrode 24 disposed on the chuck stage 20 after the decompression step ST14 is performed.

[0082] The electrostatic adsorption step ST15 is carried out under the control of the control unit 80, in a state where the workpiece 100 is attracted and held on the holding surface 21 of the chuck stage 20 and the air pressure in the internal space 11 of the vacuum chamber 10 is maintained at 50 Pa or more and 5000 Pa or less, preferably 50 Pa or more and 1000 Pa or less.

[0083] In the electrostatic adsorption step ST15, specifically, the control unit 80 first switches valve 43-1 to the open state to introduce inert gas, and the plasma unit 50 applies a high-frequency AC voltage between a pair of plasma electrodes 51 using a high-frequency power supply 52, thereby ionizing the inert gas passing through the gas supply path 18. In the first embodiment, in the electrostatic adsorption step ST15, inert gas 501, which is in a plasma state in the gas supply path 18 outside the vacuum chamber 10, is provided to the workpiece 100. In the electrostatic adsorption step ST15, inert gas 501 in a plasma state is provided to the workpiece 100 on the holding surface 21 of the chuck stage 20, thereby making the workpiece 100 on the holding surface 21 of the chuck stage 20 electrostatically charged by the inert gas 501 in a plasma state.

[0084] In the electrostatic adsorption step ST15, the chuck stage 20, controlled by the control unit 80, applies different DC voltages to the electrodes 24 via the DC power supply 25, generating a potential difference between the electrodes 24 and thus creating a predetermined electric field that covers the holding surface 21 of the chuck stage 20. In this electrostatic adsorption step ST15, the chuck stage 20 generates the predetermined electric field that covers the holding surface 21 of the chuck stage 20, thereby electrostatically adsorbing the workpiece 100, which has become electrostatically charged.

[0085] When the workpiece 100 is electrostatically adsorbed using the holding surface 21 when the air pressure in the internal space 11 is less than 50 Pa, the pressure difference between the air pressure in the internal space 11 and the negative pressure acting on the holding surface 21 for attraction and holding is small. Therefore, the holding surface 21 cannot adequately attract and hold the workpiece 100, and electrostatic adsorption may occur with a gap between the chuck table 20 and the workpiece 100. In addition, when the workpiece 100 is electrostatically adsorbed using the holding surface 21 when the air pressure in the internal space 11 is greater than 5000 Pa, gas may remain (enter) between the chuck table 20 and the workpiece 100, or more specifically, between the holding surface 21 of the chuck table 20 and the resin tape 105 attached to the back surface 104 of the workpiece 100.

[0086] Therefore, in the workpiece processing method of the first embodiment, in the decompression step ST14, under the control of the control unit 80, the holding surface 21 is maintained to attract and hold the workpiece 100, and the air pressure in the internal space 11 is reduced until the air pressure in the internal space 11 becomes 50 Pa or more and 5000 Pa or less, preferably 50 Pa or more and 1000 Pa or less. Thus, in the workpiece processing method of the first embodiment, in the vacuum holding step ST13 and the decompression step ST14, the chuck stage 20 and the workpiece 100 are kept in close contact, and the gas between the chuck stage 20 and the workpiece 100 is discharged. In the workpiece processing method of the first embodiment, after the decompression step ST14 has been performed, in the electrostatic adsorption step ST15, the workpiece 100 is electrostatically adsorbed using the holding surface 21 under the control of the control unit 80. Therefore, in the workpiece processing method of the first embodiment, in the electrostatic adsorption step ST15 after the decompression step ST14, the workpiece 100 can be electrostatically adsorbed by the holding surface 21 while the chuck table 20 and the workpiece 100 are in close contact and the residual (entry) of gas between the chuck table 20 and the workpiece 100 is reduced.

[0087] Figure 10 Yes Figure 4 The sectional view of ST16 illustrates the processing steps. Figure 11 It shows that it has passed. Figure 4 A cross-sectional view of the workpiece 100 after machining step ST16. (See also...) Figure 10 As shown, processing step ST16 is a step of dry etching the workpiece 100 by providing a plasma-state processing gas 502 to the workpiece 100 held in the chuck stage 20 after performing electrostatic adsorption step ST15.

[0088] In processing step ST16, after electrostatic adsorption step ST15, control unit 80 keeps valve 43-1 in the open state and maintains the state of applying a high-frequency AC voltage between a pair of plasma electrodes 51 using high-frequency power supply 52, and continuously supplies inert gas 501, which is in a plasma state in gas supply path 18, to workpiece 100.

[0089] In processing step ST16, specifically, under the control of the control unit 80, the internal space 11 of the vacuum chamber 10 is further vented, and vacuum suction is performed to reduce the air pressure in the internal space 11 to below 50 Pa. As a result, in processing step ST16, the pressure difference between the negative pressure acting on the holding surface 21 and the air pressure in the internal space 11 decreases, thus substantially releasing the attraction and holding of the workpiece 100 by the holding surface 21 of the chuck table 20, and the workpiece 100 is held by the holding surface 21 of the chuck table 20 through electrostatic adsorption. Furthermore, during processing step ST16, while the attraction and holding of the workpiece 100 by the holding surface 21 of the chuck table 20 is substantially released, the control unit 80 can switch valve 22-1 from the open state to the closed state, temporarily stopping the negative pressure applied to the holding surface 21 via the suction path 22 from the suction source 30-1.

[0090] In processing step ST16, after the gas pressure in the internal space 11 is reduced to below 50 Pa, the control unit 80 switches valve 41-1 to the open state to introduce processing gas. In processing step ST16, the plasma unit 50 continuously applies a high-frequency alternating voltage between a pair of plasma electrodes 51 using a high-frequency power supply 52, thus ionizing the processing gas as it passes through the gas supply path 18. In the first embodiment, in processing step ST16, processing gas 502, which is in a plasma state in the gas supply path 18 located outside the vacuum chamber 10, is supplied to the workpiece 100. Furthermore, in processing step ST16, under the control of the control unit 80, the chuck stage 20, which holds the workpiece 100 by electrostatic adsorption, draws the plasma-state processing gas 502 closer to the workpiece 100 by a predetermined electric field generated on the holding surface 21. In processing step ST16, a plasma-state processing gas 502 is supplied to the workpiece 100 on the holding surface 21 of the chuck stage 20, thereby dry etching the workpiece 100 on the holding surface 21 of the chuck stage 20 by means of the plasma-state processing gas 502.

[0091] In processing step ST16, in parallel with the dry etching of the workpiece 100, the cooling fluid source 28 supplies cooling fluid to the cooling fluid path 27, thereby cooling the holding surface 21 of the chuck stage 20, and thus dissipating the heat generated by the dry etching of the workpiece 100 held on the holding surface 21 of the chuck stage 20 through the chuck stage 20.

[0092] In processing step ST16, a mask 302 is formed on the device 103 of the workpiece 100. Therefore, a portion of the device 103 of the workpiece 100 is protected from etching by the plasma-state processing gas 502 using the mask 302. On the other hand, in processing step ST16, resin 301 is removed from the predetermined dividing lines 102 of the workpiece 100 to make it etchable. Therefore, the plasma-state processing gas 502 is brought close to the base material 100-1 of the portion of the predetermined dividing lines 102 of the workpiece 100, and the base material 100-1 of the portion of the predetermined dividing lines 102 is etched and removed. In processing step ST16, when etching for a predetermined time is performed under the control of the control unit 80, such as... Figure 11 As shown, the base material 100-1 of the workpiece 100 at the predetermined dividing line 102 is completely removed, and an etching groove 600 is formed at the predetermined dividing line 102 to separate adjacent devices 103, so that adjacent devices 103 are supported by resin tape 105 adhered to the back surface 104 in a mutually separated manner. In processing step ST16, the control unit 80 switches valve 41-1 to the closed state to stop the introduction of processing gas, thus ending the dry etching.

[0093] Figure 12 Yes Figure 4 A cross-sectional view illustrating the electrostatic adsorption stopping step ST17. (See attached image.) Figure 12 As shown, the electrostatic adsorption stop step ST17 is the step of providing inert gas 501 in a plasma state to the workpiece 100 after the processing step ST16 is performed, and stopping the application of voltage to the electrode 24 of the chuck stage 20.

[0094] Regarding the electrostatic adsorption stop step ST17, after the electrostatic adsorption step ST15 and the processing step ST16, the control unit 80 maintains the valve 43-1 in the open state and maintains the state of applying a high-frequency AC voltage between a pair of plasma electrodes 51 using the high-frequency power supply 52, and starts the electrostatic adsorption stop step ST17 while the inert gas 501 that will become plasma in the gas supply path 18 is continuously supplied to the workpiece 100.

[0095] In the electrostatic adsorption stop step ST17, specifically, inert gas is first introduced into the internal space 11 of the vacuum chamber 10 under the control of the control unit 80, so that the gas pressure in the internal space 11 is 50 Pa or more and 5000 Pa or less, preferably 50 Pa or more and 1000 Pa or less. As a result, in the electrostatic adsorption stop step ST17, the pressure difference between the negative pressure acting on the holding surface 21 and the gas pressure in the internal space 11 is sufficiently increased. Therefore, while maintaining the state of electrostatic adsorption of the workpiece 100 using the holding surface 21 of the chuck stage 20, the workpiece 100 is again attracted and held using the holding surface 21 of the chuck stage 20.

[0096] In the electrostatic adsorption stop step ST17, while the workpiece 100 is being attracted, held, and electrostatically adsorbed using the holding surface 21 of the chuck stage 20, the DC power supply 25 stops applying DC voltage to the electrodes 24 under the control of the control unit 80. This eliminates the potential difference generated between the electrodes 24, thereby eliminating the predetermined electric field generated in a manner that covers the holding surface 21 of the chuck stage 20. In the electrostatic adsorption stop step ST17, the electrostatic adsorption of the workpiece 100 by the holding surface 21 of the chuck stage 20 is stopped and released.

[0097] In the electrostatic adsorption stop step ST17, after the electrostatic adsorption of the workpiece 100 by the holding surface 21 of the chuck stage 20 is stopped and released, the control unit 80 stops applying a high-frequency AC voltage from the high-frequency power supply 52 of the plasma unit 50 between a pair of plasma electrodes 51. In the electrostatic adsorption stop step ST17, the supply of inert gas 501 in a plasma state to the workpiece 100 is thus stopped.

[0098] Figure 13 Yes Figure 4 The door opening procedure is illustrated in the sectional view shown in ST18. (See also...) Figure 13 As shown, the door opening step ST18 is the step of opening the door 13 after adjusting the internal air pressure of the vacuum chamber 10 to above atmospheric pressure by supplying inert gas to the vacuum chamber 10.

[0099] In the door opening step ST18, specifically, inert gas is first supplied to the vacuum chamber 10 using the same method as in the loading step ST12, thereby breaking the vacuum state of the internal space 11 of the vacuum chamber 10 after the electrostatic adsorption stop step ST17. In the door opening step ST18, the gas pressure in the internal space 11 of the vacuum chamber 10 is adjusted to above atmospheric pressure.

[0100] In the door opening step ST18, the door 13 is moved from the closed position to the open position by the door action unit 14 using the same method as in the loading step ST12, thereby opening the loading and unloading outlet 12 and opening the vacuum chamber 10.

[0101] The workpiece removal step ST19 is the step after the door opening step ST18 is performed, whereby the negative pressure acting from the suction path 22 is stopped, causing the workpiece 100 to detach from the holding surface 21 and be removed from the vacuum chamber 10.

[0102] In the workpiece removal step ST19, specifically, the control unit 80 first switches the valve 22-1 from the open state to the closed state, thereby stopping the negative pressure applied to the holding surface 21 via the suction path 22 from the suction source 30-1. In the workpiece removal step ST19, the holding surface 21 of the chuck table 20 releases the suction holding of the frame unit 200, which includes the workpiece 100 in which the etched processing groove 600 is formed at the part of the dividing predetermined line 102, as described in processing step ST16, and the frame unit 200 including the workpiece 100 is disengaged from the holding surface 21.

[0103] In the workpiece removal step ST19, the loading / unloading unit 60 moves from the retracted position to the loading / unloading position through the loading / unloading outlet 12 opened in the door opening step ST18 without any gripping by the gripping part 61. Furthermore, in the workpiece removal step ST19, the loading / unloading unit 60, in the loading / unloading position, grips the frame unit 200 containing the workpiece 100, which has detached from the holding surface 21, using the gripping part 61. While gripping the frame unit 200 containing the workpiece 100, it moves from the loading / unloading position to the retracted position through the loading / unloading outlet 12. In the workpiece removal step ST19, the loading / unloading unit 60 removes the frame unit 200, which contains the workpiece 100 for which an etching groove 600 is formed at the portion of the dividing predetermined line 102, from the loading / unloading door 13 of the vacuum chamber 10.

[0104] As described above, in the workpiece processing method of the first embodiment, the workpiece 100 is held in place by the holding surface 21, and the air pressure in the internal space 11 is reduced until the air pressure in the internal space 11 becomes 50 Pa or more and 5000 Pa or less, preferably 50 Pa or more and 1000 Pa or less. In this state, the workpiece 100 is electrostatically adsorbed by the holding surface 21. Thus, in the workpiece processing method of the first embodiment, the workpiece 100 can be electrostatically adsorbed by the holding surface 21 while ensuring that the chuck stage 20 and the workpiece 100 are in close contact and reducing the residual (entry) of gas between the chuck stage 20 and the workpiece 100. As a result, the workpiece processing method of the first embodiment has the following effect: the workpiece 100 can efficiently discharge the high heat applied during etching via the chuck stage 20.

[0105] Furthermore, in the workpiece processing method of the first embodiment, the etching processing apparatus 1 does not have a so-called front chamber. Therefore, taking advantage of the fact that the air pressure in the internal space 11 is close to atmospheric pressure when the workpiece 100 is moved in and out, electrostatic adsorption is performed while maintaining vacuum-based suction holding and depressurizing the air pressure in the internal space 11. Thus, the workpiece processing method of the first embodiment has the following effect: the etching processing apparatus 1 does not require a so-called front chamber, thereby suppressing the enlargement of the apparatus.

[0106] Furthermore, in the workpiece processing method of the first embodiment, during the electrostatic adsorption step ST15, processing step ST16, or electrostatic adsorption stop step ST17, a gas in a plasma state outside the vacuum chamber 10 is supplied to the workpiece 100. That is, the workpiece processing method of the first embodiment is implemented according to a so-called remote plasma method. Therefore, the workpiece processing method of the first embodiment allows for a more compact environment around the vacuum chamber 10 of the etching processing apparatus 1, thus further suppressing the need for large-scale apparatus development.

[0107] Furthermore, in the workpiece processing method of the first embodiment, the workpiece 100 is supported by a resin strip 105 on the opening 107 of the annular frame 106 to form a frame unit 200, and the workpiece 100 is held on the holding surface 21 of the chuck stage 20 through the resin strip 105. Therefore, the workpiece processing method of the first embodiment has the following effect: when the workpiece 100 is completely removed by processing step ST16 to form an etching groove 600, it is possible to maintain the state in which adjacent devices 103 are supported separately by the resin strip 105 attached to the back surface 104.

[0108] Alternatively, in the workpiece processing method of the first embodiment, instead of forming the etching processing groove 600, the heat-affected layer on the surface of the processing groove 401 can be removed by plasma etching and then cut by a cutting tool to divide it. In this case, the workpiece processing method of the first embodiment has the following effect: by removing the heat-affected layer by plasma etching, the bending strength of the workpiece 100 can be improved.

[0109] [Second Implementation]

[0110] The processing method of the workpiece according to the second embodiment of the present invention will be described with reference to the accompanying drawings. Figure 14 This is a cross-sectional view of the etching apparatus 1-2, which shows the processing method for the workpiece implemented in the second embodiment. Figure 14 In this document, the same reference numerals are used for parts that are the same as in the first embodiment, and the description is omitted.

[0111] like Figure 14 As shown, etching apparatus 1-2 is an apparatus in etching apparatus 1 that replaces the gas supply path 18 and the plasmaization unit 50 with a plasma state gas supply unit 70; its other structures are the same as etching apparatus 1. Furthermore, Figure 14 The moving-in and moving-out unit 60 has been omitted.

[0112] like Figure 14 As shown, the plasma state gas supply unit 70 has an upper electrode 71, a high-frequency power supply 74, and a lifting drive unit 75.

[0113] The upper electrode 71 penetrates the housing of the vacuum chamber 10 in the central region of its width above the internal space 11, and is disposed opposite to the mounting platform 15. The upper electrode 71 has an electrode surface 72 and a gas supply path 73. The electrode surface 72 is formed on the surface of the upper electrode 71 in the direction opposite to the mounting platform 15. The electrode surface 72 is vertically opposed to the holding surface 21 of the chuck stage 20 disposed on the mounting platform 15. The gas supply path 73 is formed inside the upper electrode 71, communicating between the electrode surface 72 and the gas supply source 40.

[0114] The high-frequency power supply 74 can apply a high-frequency AC voltage between the upper electrode 71 and the electrode 24 inside the chuck stage 20, which serves as the lower electrode. When the upper electrode 71 and the electrode 24 are subjected to a high-frequency AC voltage by the high-frequency power supply 74, the gas between the electrode surface 72 provided to the upper electrode 71 and the holding surface 21 of the chuck stage 20 can be free radicalized or ionized, thus plasmaifying the gas.

[0115] The lifting drive unit 75 is connected to the upper electrode 71 and is a mechanism that moves the upper electrode 71 vertically relative to the vacuum chamber 10. The lifting drive unit 75 moves the upper electrode 71 between a retracted position and a plasma-enhanced position. In the retracted position, the electrode surface 72 of the upper electrode 71 is fully separated vertically from the holding surface 21 of the chuck stage 20, allowing the loading / unloading unit 60 to retract into the loading / unloading position. In the plasma-enhanced position, the electrode surface 72 of the upper electrode 71 is fully brought close to the holding surface 21 of the chuck stage 20, allowing the gas supplied between the electrode surface 72 and the holding surface 21 to be plasma-enhanced.

[0116] In the second embodiment, the plasma state gas supply unit 70 is able to supply the workpiece 100 held by the holding surface 21 of the chuck stage 20 with a gas that has been plasmaized between the electrode surface 72 of the upper electrode 71 located inside the vacuum chamber 10 and the holding surface 21 of the upper electrode 71.

[0117] The workpiece processing method of the second embodiment replaces the etching processing apparatus 1 of the workpiece processing method of the first embodiment by being implemented by etching processing apparatus 1-2. Therefore, in the workpiece processing method of the second embodiment, the gas that has become plasma in the vacuum chamber 10 outside the vacuum chamber 10 through the gas supply path 18 and the plasmaization unit 50 is supplied to the workpiece 100 in the electrostatic adsorption step ST15, the processing step ST16, and the electrostatic adsorption stop step ST17, while the gas that has become plasma in the vacuum chamber 10 inside the vacuum chamber 10 is supplied to the workpiece 100 through the plasma state gas supply unit 70. Other structures are the same as in the first embodiment.

[0118] The processing method for the workpiece in the second embodiment has the structure described above. Except for providing a gas in a plasma state outside the vacuum chamber 10 to the workpiece 100, it is the same as the processing method for the workpiece in the first embodiment, and therefore has the same effect as the processing method for the workpiece in the first embodiment.

[0119] In the workpiece processing method of the second embodiment, during the electrostatic adsorption step ST15, the processing step ST16, or the electrostatic adsorption stop step ST17, a gas that has become a plasma state inside the vacuum chamber 10 is provided to the workpiece 100. Therefore, the workpiece processing method of the second embodiment has the following effect: the gas that has become a plasma state inside the vacuum chamber 10 can be immediately used for etching of the workpiece 100 located near the position where it has become a plasma state, thus enabling efficient etching of the workpiece 100.

[0120] Furthermore, the present invention is not limited to the embodiments described above. That is, various modifications and implementations can be made without departing from the spirit of the present invention.

Claims

1. A method for processing a workpiece, comprising using a vacuum chamber that isolates its interior from the atmosphere, and processing a plate-shaped workpiece using a gas in a plasma state, wherein, The processing method for the workpiece includes the following steps: The loading step involves loading the workpiece into the vacuum chamber through the loading and unloading door and placing the workpiece on the holding surface of the chuck table inside the vacuum chamber. The vacuum holding step involves applying negative pressure from the suction path connected to the holding surface of the chuck table to attract and hold the workpiece after the loading step. In the decompression step, after the vacuum holding step is performed, the door is closed and the atmospheric gas in the vacuum chamber is exhausted, so that the gas pressure in the vacuum chamber is reduced to 50 Pa or more and 5000 Pa or less, which is sufficient to hold the workpiece by the suction of the chuck table. In the electrostatic adsorption step, after the decompression step is performed, the workpiece is attracted by the chuck stage while an inert gas in plasma state is supplied to the workpiece. A voltage is applied to the electrodes arranged on the chuck stage to electrostatically adsorb the workpiece using the chuck stage. The processing steps include providing a plasma-state processing gas to the workpiece held in the chuck stage after the electrostatic adsorption step, and dry etching the workpiece. The electrostatic adsorption stop step involves providing the workpiece with an inert gas in a plasma state after the processing step is performed, and stopping the application of voltage to the electrode of the chuck stage. The door opening procedure involves supplying inert gas to the vacuum chamber and opening the door after adjusting the internal pressure of the vacuum chamber to above atmospheric pressure; and In the process of removing the workpiece, after the door opening step is performed, the negative pressure acting from the suction path is stopped, causing the workpiece to detach from the holding surface and be removed from the vacuum chamber.

2. The processing method for the workpiece according to claim 1, wherein, In the electrostatic adsorption step, the processing step, or the electrostatic adsorption stop step, a gas that is in a plasma state outside the vacuum chamber is provided to the workpiece.

3. The processing method for the workpiece according to claim 1, wherein, In the electrostatic adsorption step, the processing step, or the electrostatic adsorption stop step, a gas that has become plasma in the vacuum chamber is supplied to the workpiece.

4. The processing method for the workpiece according to any one of claims 1 to 3, wherein, The workpiece is supported by a resin belt in the opening of the annular frame to form a frame unit, and the workpiece is held on the holding surface of the chuck table through the resin belt.

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